WO2014069525A1 - 電子回路 - Google Patents
電子回路 Download PDFInfo
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- WO2014069525A1 WO2014069525A1 PCT/JP2013/079415 JP2013079415W WO2014069525A1 WO 2014069525 A1 WO2014069525 A1 WO 2014069525A1 JP 2013079415 W JP2013079415 W JP 2013079415W WO 2014069525 A1 WO2014069525 A1 WO 2014069525A1
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
- H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/12—Modifications for increasing the maximum permissible switched current
- H03K17/122—Modifications for increasing the maximum permissible switched current in field-effect transistor switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
- H03K17/163—Soft switching
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0045—Full bridges, determining the direction of the current through the load
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Definitions
- This invention relates to electronic circuits such as inverter circuits and converter circuits.
- Switching devices used in electronic circuits such as inverter circuits and converter circuits are generally composed of a plurality of switching elements (chips) connected in parallel to increase current capacity.
- SiC switching elements mainly composed of SiC silicon carbide
- SiC switching elements include SiC-MOSFET (Metal-Oxide-Semiconductor-Field-Effect-Transistor), SiC-Bipolar Transistor (Bipolar-Transistor), SiC-JFET (Junction-Field-Effect-Transistor), SiC-IGBT (Insulated Gate-Bipolar-Transistor), etc. is there.
- the SiC switching device developed by the present applicant is composed of a plurality of SiC-MOSFETs connected in parallel. Specifically, a plurality of SiC-MOSFET semiconductor chips are connected in parallel.
- FIG. 5 shows an example of the temperature characteristics of the on-resistance of the SiC switching device developed by the present applicant.
- FIG. 5 shows the temperature characteristics of the on-resistance of the SiC switching device when the gate-source voltage Vgs is changed from 9 [V] to 22 [V] at an interval of 0.5 [V].
- the temperature characteristic of the on-resistance of this SiC switching device varies depending on the gate-source voltage Vgs of the SiC switching device.
- the gate-source voltage Vgs is larger than 10 [V]
- the on-resistance of the SiC switching device increases as the temperature increases in the high-temperature region on the right side of FIG.
- the temperature characteristics are positive).
- the gate-source voltage Vgs is 10 [V] or less
- the high temperature region is, for example, a region of 125 ° C. or higher and 150 ° C. or lower.
- the high temperature region may be a region near 150 ° C., for example.
- the current is interrupted, for example, at 150 ° C., whether the temperature characteristic of the on-resistance is positive or negative may be considered.
- the gate-source voltage Vgs is 10 [V] or less at 150 ° C., the temperature characteristics of the on-resistance are negative.
- the gate-source voltage Vgs of the SiC switching device is about 18 [V], so the on-resistance of the SiC switching device increases as the temperature rises.
- the gate-source voltage Vgs of the SiC switching device decreases.
- the gate-source voltage Vgs becomes 10 [V] or lower, the temperature characteristic of the on-resistance of the SiC switching device becomes negative. Therefore, the on-resistance of the SiC switching device decreases as the temperature increases.
- the SiC switching device there are variations in characteristics among the semiconductor chips, particularly when a plurality of SiC semiconductor chips are connected in parallel. Further, since there is a variation in temperature, there is a variation in on-resistance for each semiconductor chip between the plurality of SiC-MOSFETs. Therefore, current concentrates on the semiconductor chip of the SiC-MOSFET having the lowest on-resistance (the SiCMOSFET having the highest temperature) among the plurality of SiCMOSFETs in the SiC switching device. As a result, the SiC switching device may be damaged.
- An object of the present invention is to provide an electronic circuit that can prevent a switching device from being damaged when a short circuit occurs.
- An electronic circuit of the present invention includes a switching device including a plurality of switching elements connected in parallel and mainly composed of SiC, an overcurrent detection circuit for detecting that an overcurrent flows through the switching device, And an overcurrent protection circuit for cutting off a current flowing through the switching device when an overcurrent is detected by the overcurrent detection circuit.
- the overcurrent protection circuit is configured such that when the current is interrupted, the gate-source voltage or the gate-emitter voltage of the switching device decreases to a voltage at which the temperature characteristic of the on-resistance of the switching device becomes negative.
- the time until the drain current or collector current of the switching device reaches 2% of the saturation current is set to 500 [nsec] or less.
- the drain current or collector current of the switching device becomes its saturation current. Since the time required to reach 2% is set to 500 [nsec] or less, the switching device can be prevented from being damaged due to thermal runaway.
- the gate-source voltage or the gate-emitter voltage of the switching device decreases to a value at which the temperature characteristic of the on-resistance of the switching device becomes negative after the start of the current interruption operation. Since it takes time to do so, the current interruption speed does not become too fast. For this reason, a surge voltage can also be suppressed low.
- the overcurrent protection circuit is configured such that when the current is interrupted, the current-blocking operation is started, and the gate-source voltage or the gate-emitter voltage of the switching device is turned on.
- the time until the time when the temperature characteristic of the resistance decreases to a negative voltage is 100 [nsec] or more, and the time from the time until the drain current or collector current of the switching device reaches 2% of the saturation current is 500 [Nsec] or less.
- the switching device can be prevented from being damaged due to thermal runaway, and the surge voltage can be suppressed low.
- the overcurrent protection circuit includes a current cutoff resistor and a gate terminal of the switching device via the current cutoff resistor when an overcurrent is detected by the overcurrent detection circuit. And a circuit for grounding. Then, after the gate-source voltage or the gate-emitter voltage of the switching device decreases to a voltage at which the temperature characteristic of the on-resistance of the switching device becomes negative, the drain current or collector current of the switching device is saturated.
- the resistance value of the current interrupt resistor is set so that the time required to reach 2% of the current is 500 [nsec] or less.
- the overcurrent protection circuit includes a current cutoff resistor and a gate terminal of the switching device via the current cutoff resistor when an overcurrent is detected by the overcurrent detection circuit. And a circuit for grounding.
- the time from the start of the current interruption operation to the time when the gate-source voltage or the gate-emitter voltage of the switching device decreases to a voltage at which the temperature characteristic of the on-resistance of the switching device becomes negative is 100.
- the resistance value of the current interrupt resistor is set so that the time from the point of time until the drain current or collector current of the switching device reaches 2% of the saturation current is 500 [nsec] or less. Has been.
- the overcurrent protection circuit includes a first current cutoff resistor, a second current cutoff resistor having a resistance value larger than a resistance value of the first current cutoff resistor, and the overcurrent detection.
- the gate terminal of the switching device is grounded via the second current cutoff resistor, and the gate-source voltage or the gate-emitter voltage of the switching device is set to the switching device.
- the drain current or collector current of the switching device is saturated.
- the resistance value of the first current cutoff resistor is set so that the time required to reach 2% of the current is 500 [nsec] or less.
- the overcurrent protection circuit includes a first current cutoff resistor, a second current cutoff resistor having a resistance value larger than a resistance value of the first current cutoff resistor, and the overcurrent detection.
- the gate terminal of the switching device is grounded via the second current cutoff resistor, and the gate-source voltage or the gate-emitter voltage of the switching device is set to the switching device.
- the time from the start of the current interruption operation to the time when the gate-source voltage or the gate-emitter voltage of the switching device decreases to a voltage at which the temperature characteristic of the on-resistance of the switching device becomes negative is 100.
- the resistance value of the second current interrupt resistor is set to be [nsec] or more.
- the drain current or collector current of the switching device is saturated when the gate-source voltage or the gate-emitter voltage of the switching device decreases to a voltage at which the temperature characteristic of the on-resistance of the switching device becomes negative.
- the resistance value of the first current cutoff resistor is set so that the time required to reach 2% of the current is 500 [nsec] or less.
- the switching element is any one selected from MOSFET, bipolar transistor, JFET, and IGBT whose main component is SiC.
- FIG. 1 is an electric circuit diagram showing an inverter circuit according to an embodiment of the present invention.
- FIG. 2 is a schematic plan view showing an electrical configuration of the module of FIG.
- FIG. 3 is an electric circuit diagram showing an electrical configuration of the gate drive circuit.
- FIG. 4 shows a sample having a structure similar to that of the module shown in FIG. 2, and the sample is connected to a gate drive circuit having the same configuration as the gate drive circuit, and as a current blocking resistor in the gate drive circuit. It is a figure which shows the result of having done the short circuit test using three types of resistance prepared beforehand.
- FIG. 5 is a graph showing the temperature characteristics of the on-resistance of the module shown in FIG.
- FIG. 6 is an electric circuit diagram showing another configuration example of the gate drive circuit.
- FIG. 7 schematically shows changes over time in the short-circuit current and the gate-source voltage of the first MOSFET when the interruption speed at the time of current interruption is changed stepwise using a plurality of types of current interruption resistors. It
- FIG. 1 is an electric circuit diagram showing an inverter circuit according to an embodiment of the present invention.
- the inverter circuit 1 includes first to fourth modules (switching devices) 2 to 5, first to fourth gate drive circuits 6 to 9, and a control unit 10.
- FIG. 2 is an electric circuit diagram showing an electrical configuration of the first module 2.
- the first module 2 includes a plurality of switching elements Tr (semiconductor chips).
- the switching element Tr is composed of an N-channel type MOSFET.
- the switching element is a SiC-MOSFET whose main component is SiC (silicon carbide).
- the first module 2 includes a drain terminal D, a source terminal S, a gate terminal G, and a source sense terminal SS.
- the plurality of switching elements Tr are connected in parallel between the drain terminal D and the source terminal S. Since SiC switching elements such as SiC-MOSFETs are difficult to increase in chip size compared to Si switching elements, modules composed of a plurality of SiC switching elements are more difficult than modules composed of a plurality of Si switching elements. In many cases, the number of switching elements connected in parallel (the number of semiconductor chips connected in parallel) increases.
- the drains of the plurality of switching elements Tr are connected to the drain terminal D.
- the sources of the plurality of switching elements Tr are connected to the source terminal S.
- the gates of the plurality of switching elements Tr are connected to the gate terminal G.
- the source (current detection unit) of one switching element Tr is also connected to the source sense terminal SS.
- the second, third, and fourth modules 3 to 5 have the same configuration as the first module 2.
- a parallel circuit of a plurality of switching elements Tr in the first module 2 is simply represented by one MOSFET 21 (hereinafter referred to as “first MOSFET 21”).
- a parallel circuit of a plurality of switching elements Tr in the second module 3 is simply represented by one MOSFET 22 (hereinafter referred to as “second MOSFET 22”).
- a parallel circuit of a plurality of switching elements Tr in the third module 4 is simply represented by one MOSFET 23 (hereinafter referred to as “third MOSFET 23”).
- a parallel circuit of a plurality of switching elements Tr in the fourth module 5 is simply represented by one MOSFET 24 (hereinafter referred to as “fourth MOSFET 24”).
- the drain terminal D of the first module 2 (the drain of the first MOSFET 21) is connected to the positive terminal of the power supply 11.
- the source terminal S of the first module 2 (the source of the first MOSFET 21) is connected to the drain terminal D of the second module 3 (the drain of the second MOSFET 22).
- the gate terminal G of the first module 2 (the gate of the first MOSFET 21) and the source sense terminal SS of the first module 2 (the source of the first MOSFET 21) are connected to the first gate drive circuit 6. .
- the source terminal S of the second module 3 (the source of the second MOSFET 22) is connected to the negative terminal of the power supply 11.
- the gate terminal G of the second module 3 (the gate of the second MOSFET 22) and the source sense terminal SS of the second module 3 (the source of the second MOSFET 22) are connected to the second gate drive circuit 7. .
- the drain terminal D of the third module 4 (the drain of the third MOSFET 23) is connected to the positive terminal of the power supply 11.
- the source terminal S of the third module 4 (the source of the third MOSFET 23) is connected to the drain terminal D of the fourth module 5 (the drain of the fourth MOSFET 24).
- the gate terminal G of the third module 4 (the gate of the third MOSFET 23) and the source sense terminal SS of the third module 4 (the source of the third MOSFET 23) are connected to the third gate drive circuit 8. .
- the source terminal S of the fourth module 5 (the source of the fourth MOSFET 24) is connected to the negative terminal of the power supply 11.
- the gate terminal G of the fourth module 5 (the gate of the fourth MOSFET 24) and the source sense terminal SS of the fourth module 5 (the source of the fourth MOSFET 24) are connected to the fourth gate drive circuit 9. .
- a load 12 is connected between a connection point between the first module 2 and the second module 3 and a connection point between the third module 4 and the fourth module 5.
- the control unit 10 is composed of a microcomputer including a CPU and a memory (ROM, RAM, etc.) that stores the program.
- the controller 10 includes a first gate control signal CG 1 for the first MOSFET 21, a second gate control signal CG 2 for the second MOSFET 22, a third gate control signal CG 3 for the third MOSFET 23, and a fourth gate 24 for the fourth MOSFET 24.
- 4 gate control signals CG4 are generated and applied to the first, second, third and fourth gate drive circuits 6, 7, 8, 9 respectively.
- Each of the gate drive circuits 6, 7, 8, 9 is based on the gate control signals CG 1, CG 2, CG 3, CG 4 provided from the control unit 10, respectively, and the first MOSFET 21, the second MOSFET 22, and the third MOSFET 23.
- gate drive signals DG1, DG2, DG3, and DG4 for the fourth MOSFET 24 are generated and output, respectively.
- the first to fourth MOSFETs 21, 22, 23, and 24 are driven and controlled.
- the first MOSFET 21 and the fourth MOSFET 24 are turned on. Thereafter, the MOSFETs 21 and 22 are turned off, so that all the MOSFETs 21 to 24 are turned off.
- the second MOSFET 22 and the third MOSFET 23 are turned on this time. Thereafter, the MOSFETs 22 and 23 are turned off, so that all the MOSFETs 21 to 24 are turned off.
- the first MOSFET 21 and the fourth MOSFET 24 are turned on again. By repeating such an operation, the load 12 is AC driven.
- Each of the gate drive circuits 6, 7, 8, 9 protects the MOSFETs 21, 22, 23, 24 when a short circuit or the like occurs in which the power supply voltage is directly applied to the corresponding MOSFETs 21, 22, 23, 24. It has an overcurrent protection function.
- a short circuit in which the power supply voltage is directly applied to the MOSFETs 21, 22, 23, and 24 occurs, for example, when the load 12 is short-circuited, the power supply 11 is connected in series between the positive terminal and the negative terminal.
- any of the two MOSFETs (21, 22; 23, 24) connected in series between the positive terminal and the negative terminal of the power supply 11 There is a case where one of them has a short circuit failure. Since the configurations of the gate drive circuits 6, 7, 8, and 9 are the same, the overcurrent protection function of the first gate drive circuit 6 will be described in detail below.
- FIG. 3 is an electric circuit diagram showing the configuration of the first gate drive circuit.
- the first gate drive circuit 6 includes an amplifier circuit 31, a first switch circuit 32, a gate resistor 33, a second switch circuit 34, a current cutoff resistor 35, and an overcurrent detection circuit 36. Yes.
- the gate control signal CG1 from the control unit 10 is input to the input terminal of the amplifier circuit 31.
- the amplifier circuit 31 amplifies the gate control signal CG1 and generates a gate drive signal DG1.
- the output terminal of the amplifier circuit 31 is connected to one input terminal (first input terminal) a of the first switching circuit 32.
- the first switching circuit 32 has two input terminals a and b and one output terminal c, and selects one of the input terminals a and b and connects it to the output terminal c.
- the other input terminal (second input terminal) b of the first switching circuit 32 is open.
- the output terminal c of the first switching circuit 32 is connected to the gate terminal G of the first module 2 via the gate resistor 33.
- the first switching circuit 32 is controlled by the output of the overcurrent detection circuit 36.
- the second switching circuit 34 has one input terminal d and two output terminals e and f, and selects either one of the output terminals e and f to change the input terminal d to the selected output terminal. Connecting.
- the input terminal d is connected to a connection point between the gate resistor 33 and the gate terminal G of the first module 2 via a current interrupt resistor 35.
- One output terminal (first output terminal) e is in an open state.
- the other output terminal (second output terminal) f is grounded.
- the second switching circuit 34 is controlled by the output of the overcurrent detection circuit 36.
- the resistance value of the gate resistor 33 is r1
- the resistance value of the current interrupt resistor 35 is r2. As will be described later, r2 is set to a value larger than r1.
- the overcurrent detection circuit 36 includes a current detection resistor 37 and a comparison circuit 38.
- One end of the current detection resistor 37 is connected to the source sense terminal SS of the first module 2, and the other end of the current detection resistor 37 is grounded.
- the voltage between terminals of the current detection resistor 37 (voltage drop amount) is a value corresponding to the magnitude of the current flowing through the first MOSFET 21.
- the voltage between the terminals of the current detection resistor 37 is given to the comparison circuit 38.
- the comparison circuit 38 compares the voltage between the terminals of the current detection resistor 37 with a reference voltage to determine whether or not the current is in an overcurrent state, and outputs a determination signal representing the determination result. Specifically, the comparison circuit 38 determines that the current is in an overcurrent state (detects an overcurrent) when the voltage between the terminals of the current detection resistor 37 is greater than the reference voltage.
- the second switching circuit 34 selects the first output terminal e and connects the input terminal d to the first output terminal e. To do. As a result, the input terminal d of the second switching circuit 34 is in a high impedance state.
- the first switching circuit 32 selects the first input terminal a and connects the first input terminal a to the output terminal c.
- the gate drive signal DG1 generated by the amplifier circuit 31 is given to the gate of the first MOSFET 21 via the gate resistor 33.
- the first MOSFET 21 is driven and controlled by the gate drive signal DG1.
- the first switching circuit 32 selects the second input terminal b and connects the output terminal c to the second input terminal b. As a result, the output terminal c of the first switching circuit 32 is in a high impedance state.
- the second switching circuit 34 selects the second output terminal f and connects the input terminal d to the second output terminal f. As a result, the input terminal d of the second switching circuit 34 is grounded.
- the gate of the first MOSFET 21 is grounded via the current blocking resistor 35.
- the gate-source voltage Vgs of the first MOSFET 21 is reduced, and the drain current (short-circuit current) flowing through the first MOSFET 21 is cut off.
- the breaking speed of the short-circuit current varies depending on the resistance value r2 of the current breaking resistor 35.
- the greater the resistance value r2 of the current interruption resistor 35 the slower the interruption rate of the short circuit current.
- the resistance value r2 of the current interrupt resistor 35 is larger than the resistance value r1 of the gate resistor 33.
- the resistance value r1 of the gate resistor 33 is, for example, 3.9 [ ⁇ ]
- the resistance value r2 of the current interrupt resistor 35 is, for example, 33 [ ⁇ ].
- the interruption speed of the short-circuit current is increased, a large current flows through the first MOSFET 21, so that a large surge voltage is generated and the first MOSFET 21 may be damaged. Therefore, it is necessary to slow down the interruption speed of the short-circuit current. For this reason, the gate of the first MOSFET 21 is grounded via the current cutoff resistor 35 having a resistance value r2 larger than the resistance value r1 of the gate resistor 33 when overcurrent is detected.
- the breaking speed of the short-circuit current is slowed, the first MOSFET 21 may be damaged due to thermal runaway. That is, the temperature characteristic of the on-resistance of the first MOSFET 21 varies depending on the gate-source voltage Vgs of the first MOSFET 21 as shown in FIG. FIG. 5 shows the temperature characteristics of the on-resistance of the first MOSFET 21 when the gate-source voltage Vgs is changed from 9 [V] to 22 [V] at intervals of 0.5 [V].
- the on-resistance of the first MOSFET 21 increases as the temperature increases (on-state) in the high temperature region on the right side of FIG. Resistance temperature characteristics are positive).
- the temperature characteristic of the on-resistance is positive.
- the on-resistance of the first MOSFET 21 decreases as the temperature rises (temperature characteristics of the on-resistance). Is negative).
- the temperature characteristic of the on-resistance is negative.
- the high temperature region is, for example, a region of 125 ° C. or higher and 150 ° C. or lower.
- the high temperature region may be a region near 150 ° C., for example.
- the gate-source voltage Vgs of the first MOSFET 21 is about 18 [V], so that the on-resistance of the first MOSFET 21 increases as the temperature rises.
- the gate-source voltage Vgs of the first MOSFET 21 decreases.
- the gate-source voltage Vgs becomes 10 [V] or less, the temperature characteristic of the on-resistance of the first MOSFET 21 becomes negative. Therefore, the on-resistance of the first MOSFET 21 decreases as the temperature increases.
- the ON resistance varies among the plurality of switching elements Tr. Therefore, among the plurality of switching elements Tr included in the first MOSFET 21, current concentrates on the switching element Tr having the lowest on-resistance (the switching element Tr having the highest temperature). As a result, the first MOSFET 21 may be damaged.
- the gate-source voltage Vgs is such a value that the temperature characteristic of the on-resistance of the first MOSFET 21 becomes negative (in this embodiment, 10 [V]). So that the time until the time when the drain current decreases to 100 [nsec] or more, and the time Tx from that time until the drain current of the first MOSFET 21 becomes 2% or less of the saturation current is 500 [nsec] or less.
- the resistance value r2 of the current interrupt resistor 35 is set.
- the first MOSFET 21 can be prevented from being damaged due to thermal runaway as can be seen from the experimental results described later. Even when the time Tx is 500 [nsec] or less, the gate-source voltage Vgs decreases to a value at which the temperature characteristic of the on-resistance of the first MOSFET 21 becomes negative after the current interruption operation is started. Since the time up to the point of time is set to 100 [nsec] or more, the current interruption rate does not become too fast. For this reason, a surge voltage can also be suppressed low.
- FIG. 4 shows a sample of a plurality of modules having the same structure as the module 2 shown in FIG. 2, and the sample is connected to a gate drive circuit having the same configuration as the gate drive circuit 6.
- the result of having performed the short circuit test using three types of resistors prepared in advance as the current interrupting resistor is shown. Three types of resistance values of 47 [ ⁇ ], 33 [ ⁇ ], and 22 [ ⁇ ] were prepared as current interruption resistors.
- the short-circuit test was performed by directly connecting a power source between the drain and source of the sample when the sample was in the on state.
- curves a1 and b1 respectively show a short-circuit current (drain current) Isc and a gate when a resistor having a resistance value of 47 [ ⁇ ] is used as a current cutoff resistor (corresponding to the resistor 35 in FIG. 3).
- a change with time in the source-to-source voltage Vgs is shown.
- Curves a2 and b2 show changes over time in the short-circuit current Isc and the gate-source voltage Vgs when a resistor having a resistance value of 33 [ ⁇ ] is used as the current cutoff resistor, respectively.
- Curves a3 and b3 show changes with time in the short-circuit current Isc and the gate-source voltage Vgs when a resistor having a resistance value of 22 [ ⁇ ] is used as the current cutoff resistor, respectively.
- t 0 indicates a point in time when the overcurrent is detected and the gate terminal G of the sample is grounded via the current blocking resistor (short-circuit current blocking start point). Regardless of the resistance value of the current interruption resistance, when the gate terminal G of the sample is grounded via the current interruption resistance, the gate-source voltage Vgs and the short-circuit current (drain current) Isc decrease.
- the short-circuit current Isc and the gate-source voltage Vgs converged to almost zero. And the sample did not break.
- the time until the gate-source voltage Vgs reaches 10 [V] after the short-circuit current cutoff start time t 0 is 100 [nsec] or more, and the gate-source voltage Vgs reaches 10 [V].
- the time Tx2 from when the short-circuit current Isc reaches 2% of the saturation current was 500 [nsec] or less.
- the short circuit current Isc and the gate-source voltage Vgs converged to almost zero. And the sample did not break.
- the time until the gate-source voltage Vgs reaches 10 [V] after the short-circuit current cutoff start time t 0 is 100 [nsec] or more, and the gate-source voltage Vgs reaches 10 [V].
- the time Tx3 until the short circuit current Isc reaches 2% of the saturation current is shorter than the time Tx2.
- the time from when the gate-source voltage Vgs reaches 10 [V] at which the temperature characteristic of the on-resistance is negative until the short-circuit current Isc reaches 2% of the saturation current is 500 [nsec].
- the sample was found not to break when: This is presumably because the short-circuit current can be reduced to a small value before the short-circuit current concentrates on one of the plurality of switching elements included in the sample (module).
- the gate resistor 35 and the current interrupt resistor 35 are provided in the gate drive circuit 6, but the gate resistor 35 and the current interrupt resistor 35 may be provided on the module (switching device) 2 side.
- the present invention can also be implemented in other forms.
- the gate drive circuits 6 to 9 cut off the short-circuit current using one current cut-off resistor 35, but the cut-off speed at the time of current cut-off is stepped using a plurality of current cut-off resistors. It may be changed as desired.
- the configuration of the gate drive circuit in this case will be described with reference to FIG. 6 using the first gate drive circuit 6 as an example. 6, portions corresponding to the respective portions in FIG. 3 described above are denoted by the same reference numerals as those in FIG.
- the gate resistor 33 is used as the first current cutoff resistor, and the current cutoff resistor 35 is used as the second current cutoff resistor.
- the resistance value r2 of the second current cutoff resistor (current cutoff resistor 35) is set larger than the resistance value r1 of the first current cutoff resistor (gate resistor 33).
- the resistance value r1 is 3.9 [ ⁇ ]
- the resistance value r2 is 33 [ ⁇ ].
- the first switching circuit 32 has a third input terminal g in addition to the first and second input terminals a and b.
- the third input terminal g is grounded.
- the gate drive circuit 6 further includes a voltage monitoring unit 39 that monitors the gate-source voltage Vgs of the first MOSFET 21.
- the second switching circuit 34 selects the first output terminal e and connects the input terminal d to the first output terminal e. To do. As a result, the input terminal d of the second switching circuit 34 is in a high impedance state.
- the first switching circuit 32 selects the first input terminal a and connects the first input terminal a to the output terminal c. Thereby, the gate drive signal DG1 generated by the amplifier circuit 31 is given to the gate of the first MOSFET 21 via the gate resistor (first current cutoff resistor) 33.
- the first MOSFET 21 is driven and controlled by the gate drive signal DG1.
- the first switching circuit 32 selects the second input terminal b and connects the output terminal c to the second input terminal b. As a result, the output terminal c of the first switching circuit 32 is in a high impedance state.
- the second switching circuit 34 selects the second output terminal f and connects the input terminal d to the second output terminal f. As a result, the input terminal d of the second switching circuit 34 is grounded.
- the gate of the first MOSFET 21 is grounded via the second current cutoff resistor 35.
- the gate-source voltage Vgs of the first MOSFET 21 is reduced.
- the resistance value of the second current cutoff resistor 35 is set to be larger than the resistance value of the first current cutoff resistor 33, the gate of the first MOSFET 21 is connected via the first current cutoff resistor 33.
- the current interruption speed is slower than when grounding.
- the voltage monitoring unit 39 When the gate-source voltage Vgs decreases and the gate-source voltage Vgs becomes a voltage value (10 [V] in this example) at which the temperature characteristic of the on-resistance of the first MOSFET 21 is negative, the voltage monitoring unit 39 The resistance switching signal is output to the first switching circuit 32 and the second switching circuit 34.
- the first switching circuit 32 When the first switching circuit 32 receives the resistance switching signal from the voltage monitoring unit 39, the first switching circuit 32 selects the third input terminal g and connects the output terminal c to the third input terminal g. Upon receiving the resistance switching signal from the voltage monitoring unit 39, the second switching circuit 34 selects the first output terminal e and connects the input terminal d to the first output terminal e. As a result, the gate of the first MOSFET 21 is grounded via the first current cutoff resistor 33, and the gate-source voltage Vgs is reduced. Since the resistance value of the first current cutoff resistor 33 is smaller than the resistance value of the second current cutoff resistor 35, the current cutoff speed is increased.
- FIG. 7 schematically shows changes over time in the short-circuit current (drain current) Isc and the gate-source voltage Vgs of the first MOSFET 21 when the current is interrupted.
- a time point t 0 indicates a time point when the overcurrent is detected and the gate of the first MOSFET 21 is grounded via the second current cut-off resistor 35 (short-circuit current cut-off start time).
- the time point t 1 is a time point when the gate of the first MOSFET 21 is grounded via the first current cut-off resistor 33 based on the resistance switching signal, that is, after the start of short-circuit current cut-off.
- the time from the short circuit current interrupting beginning t 0 to time t 1 is at 100 [nsec] or more, the time from time t 1 to the drain current of the first MOSFET21 is below 2% of the saturation current 500 [nsec] or less.
- the resistance value of the second current blocking resistor 35, the time from the short-circuit current cutoff start time t 0 to time t 1 is set to a value such that 100 [nsec] or more. Further, the resistance value of the first current cutoff resistor 33 is set to a value such that the time from the time point t 1 until the drain current of the first MOSFET 21 becomes 2% or less of the saturation current becomes 500 [nsec] or less. Has been.
- the first current cutoff resistor (gate resistor 33) and the second current cutoff resistor 35 are provided in the gate drive circuit 6, but the first current cutoff resistor (gate resistor 33) and The second current cutoff resistor 35 may be provided on the module (switching device) 2 side.
- the switching elements Tr constituting the switching devices 21 to 24 are SiC-MOSFETs.
- the switching elements Tr constituting the switching devices 21 to 24 are switching elements mainly composed of SiC. Any element other than the SiC-MOSFET may be used.
- the switching elements Tr constituting the switching devices 21 to 24 may be SiC-bipolar transistors, SiC-JFETs, SiC-IGBTs, or the like.
- the switching element Tr is a SiC-IGBT
- the collector of the SiC-IGBT corresponds to the drain of the SiC-MOSFET
- the emitter of the SiC-IGBT corresponds to the source of the SiC-MOSFET.
- the present invention can also be applied to an electronic circuit other than an inverter circuit such as a converter circuit.
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Abstract
Description
2~5 モジュール(スイッチングデバイス)
6~9 ゲート駆動回路
10 制御部
11 電源
12 負荷
21~24 MOSFET
31 増幅回路
32 第1の切替回路
33 ゲート抵抗
34 第1の切替回路
35 電流遮断抵抗
36 過電流検出回路
39 電圧監視部
Claims (7)
- 並列接続されかつSiCを主成分とする複数のスイッチング素子を含むスイッチングデバイスと、
前記スイッチングデバイスに過電流が流れていることを検出するための過電流検出回路と、
前記過電流検出回路によって過電流が検出されたときに、前記スイッチングデバイスに流れる電流を遮断させるための過電流保護回路とを含み、
前記過電流保護回路は、電流遮断時において、前記スイッチングデバイスのゲート-ソース間電圧またはゲート-エミッタ間電圧が前記スイッチングデバイスのオン抵抗の温度特性が負となる電圧まで低下してから、前記スイッチングデバイスのドレイン電流またはコレクタ電流がその飽和電流の2%に達するまでの時間を500[nsec]以下にするように構成されている、電子回路。 - 前記過電流保護回路は、電流遮断時において、電流遮断動作が開始されてから、前記スイッチングデバイスのゲート-ソース間電圧またはゲート-エミッタ間電圧が前記スイッチングデバイスのオン抵抗の温度特性が負となる電圧まで低下する時点までの時間が100[nsec]以上となり、その時点から前記スイッチングデバイスのドレイン電流またはコレクタ電流がその飽和電流の2%に達するまでの時間が500[nsec]以下となるように構成されている、請求項1に記載の電子回路。
- 前記過電流保護回路は、
電流遮断抵抗と、
前記過電流検出回路によって過電流が検出されたときに、前記スイッチングデバイスのゲート端子を前記電流遮断用抵抗を介して接地させるための回路とを含み、
前記スイッチングデバイスのゲート-ソース間電圧またはゲート-エミッタ間電圧が前記スイッチングデバイスのオン抵抗の温度特性が負となる電圧まで低下してから、前記スイッチングデバイスのドレイン電流またはコレクタ電流がその飽和電流の2%に達するまでの時間が500[nsec]以下となるように、前記電流遮断抵抗の抵抗値が設定されている、請求項1に記載の電子回路。 - 前記過電流保護回路は、
電流遮断抵抗と、
前記過電流検出回路によって過電流が検出されたときに、前記スイッチングデバイスのゲート端子を前記電流遮断用抵抗を介して接地させるための回路とを含み、
電流遮断動作が開始されてから、前記スイッチングデバイスのゲート-ソース間電圧またはゲート-エミッタ間電圧が前記スイッチングデバイスのオン抵抗の温度特性が負となる電圧まで低下する時点までの時間が100[nsec]以上となり、その時点から前記スイッチングデバイスのドレイン電流またはコレクタ電流がその飽和電流の2%に達するまでの時間が500[nsec]以下となるように、前記電流遮断抵抗の抵抗値が設定されている、請求項1に記載の電子回路。 - 前記過電流保護回路は、
第1の電流遮断抵抗と、
抵抗値が前記第1の電流遮断抵抗の抵抗値より大きな第2の電流遮断抵抗と、
前記過電流検出回路によって過電流が検出されたときに、前記スイッチングデバイスのゲート端子を前記第2の電流遮断抵抗を介して接地させ、前記スイッチングデバイスのゲート-ソース間電圧またはゲート-エミッタ間電圧が前記スイッチングデバイスのオン抵抗の温度特性が負となる電圧まで低下すると、前記スイッチングデバイスのゲート端子を前記第1の電流遮断抵抗を介して接地させる回路とを含み、
前記スイッチングデバイスのゲート-ソース間電圧またはゲート-エミッタ間電圧が前記スイッチングデバイスのオン抵抗の温度特性が負となる電圧まで低下してから、前記スイッチングデバイスのドレイン電流またはコレクタ電流がその飽和電流の2%に達するまでの時間が500[nsec]以下となるように、前記第1の電流遮断抵抗の抵抗値が設定されている、請求項1に記載の電子回路。 - 前記過電流保護回路は、
第1の電流遮断抵抗と、
抵抗値が前記第1の電流遮断抵抗の抵抗値より大きな第2の電流遮断抵抗と、
前記過電流検出回路によって過電流が検出されたときに、前記スイッチングデバイスのゲート端子を前記第2の電流遮断抵抗を介して接地させ、前記スイッチングデバイスのゲート-ソース間電圧またはゲート-エミッタ間電圧が前記スイッチングデバイスのオン抵抗の温度特性が負となる電圧まで低下すると、前記スイッチングデバイスのゲート端子を前記第1の電流遮断抵抗を介して接地させる回路とを含み、
電流遮断動作が開始されてから、前記スイッチングデバイスのゲート-ソース間電圧またはゲート-エミッタ間電圧が前記スイッチングデバイスのオン抵抗の温度特性が負となる電圧まで低下する時点までの時間が100[nsec]以上となるように、前記第2の電流遮断抵抗の抵抗値が設定されており、
前記スイッチングデバイスのゲート-ソース間電圧またはゲート-エミッタ間電圧が前記スイッチングデバイスのオン抵抗の温度特性が負となる電圧まで低下した時点から、前記スイッチングデバイスのドレイン電流またはコレクタ電流がその飽和電流の2%に達するまでの時間が500[nsec]以下となるように、前記第1の電流遮断抵抗の抵抗値が設定されている、請求項2に記載の電子回路。 - 前記スイッチング素子がSiCを主成分とする、MOSFET、バイポーラトランジスタ、JFETおよびIGBTのうちから選択された任意の1つである、請求項1~6のいずれか一項に記載の電子回路。
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JPWO2017168951A1 (ja) * | 2016-03-29 | 2018-11-22 | 三菱電機株式会社 | 過熱保護制御装置および車載用電力回路装置 |
JP2018037919A (ja) * | 2016-09-01 | 2018-03-08 | 富士電機株式会社 | ゲート駆動回路 |
CN110635792A (zh) * | 2018-12-05 | 2019-12-31 | 徐州中矿大传动与自动化有限公司 | 一种基于短路电流抑制的SiC MOSFET短路保护电路及方法 |
CN110635792B (zh) * | 2018-12-05 | 2023-12-15 | 江苏国传电气有限公司 | 一种基于短路电流抑制的SiC MOSFET短路保护电路及方法 |
CN109638798A (zh) * | 2018-12-20 | 2019-04-16 | 上海艾为电子技术股份有限公司 | 开关充电芯片的保护电路和开关充电电路 |
CN109638798B (zh) * | 2018-12-20 | 2024-02-09 | 上海艾为电子技术股份有限公司 | 开关充电芯片的保护电路和开关充电电路 |
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JPWO2014069525A1 (ja) | 2016-09-08 |
EP2916440B1 (en) | 2018-05-16 |
EP2916440A4 (en) | 2016-05-25 |
US9461533B2 (en) | 2016-10-04 |
EP3396860B1 (en) | 2023-05-10 |
JP2018198529A (ja) | 2018-12-13 |
US20150311779A1 (en) | 2015-10-29 |
EP3396860A1 (en) | 2018-10-31 |
JP6714050B2 (ja) | 2020-06-24 |
EP2916440A1 (en) | 2015-09-09 |
JP7038758B2 (ja) | 2022-03-18 |
EP4213383A1 (en) | 2023-07-19 |
JP2020150791A (ja) | 2020-09-17 |
JP6380953B2 (ja) | 2018-08-29 |
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