WO2014057902A1 - 半導体装置、セラミックス回路基板及び半導体装置の製造方法 - Google Patents

半導体装置、セラミックス回路基板及び半導体装置の製造方法 Download PDF

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WO2014057902A1
WO2014057902A1 PCT/JP2013/077217 JP2013077217W WO2014057902A1 WO 2014057902 A1 WO2014057902 A1 WO 2014057902A1 JP 2013077217 W JP2013077217 W JP 2013077217W WO 2014057902 A1 WO2014057902 A1 WO 2014057902A1
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Prior art keywords
layer
bonding
semiconductor element
circuit layer
semiconductor device
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PCT/JP2013/077217
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English (en)
French (fr)
Japanese (ja)
Inventor
修司 西元
長友　義幸
長瀬　敏之
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三菱マテリアル株式会社
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Priority to KR1020157008678A priority Critical patent/KR102163532B1/ko
Priority to US14/433,764 priority patent/US9401340B2/en
Priority to CN201380052142.6A priority patent/CN104704618B/zh
Priority to IN2878DEN2015 priority patent/IN2015DN02878A/en
Priority to EP13846215.5A priority patent/EP2908333A4/en
Publication of WO2014057902A1 publication Critical patent/WO2014057902A1/ja

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Definitions

  • the present invention relates to a semiconductor device including a circuit layer made of a conductive material and a semiconductor element mounted on the circuit layer, a ceramic circuit board used in the semiconductor device, and a method for manufacturing the semiconductor device. is there.
  • This application claims priority on Japanese Patent Application No. 2012-224257 filed in Japan on October 09, 2012, the contents of which are incorporated herein by reference.
  • a semiconductor device such as an LED or a power module has a structure in which a semiconductor element is bonded on a circuit layer made of a conductive material.
  • a power semiconductor element for high power control used to control an electric vehicle such as wind power generation or an electric vehicle has a large amount of heat generation. Therefore, as a substrate on which the power semiconductor element is mounted, for example, AlN (aluminum nitride) 2.
  • AlN aluminum nitride
  • a heat radiating plate is bonded to the other side of the ceramic circuit board, and heat generated in the semiconductor element is transmitted to the ceramic circuit board side and dissipated to the outside through the heat radiating plate.
  • solder material when an electronic component such as a semiconductor element is joined on a circuit layer, a method using a solder material is widely used as shown in Patent Document 1, for example.
  • lead-free solders such as Sn—Ag, Sn—In, or Sn—Ag—Cu are becoming mainstream from the viewpoint of environmental protection.
  • Patent Document 1 when an electronic component such as a semiconductor element and a circuit layer are joined via a solder material, a part of the solder melts when used in a high temperature environment, There is a possibility that the bonding reliability between the electronic component such as a semiconductor element and the circuit layer is lowered.
  • compound semiconductor elements such as SiC or GaN are expected to be put into practical use from silicon semiconductors, and the heat resistance of the semiconductor elements themselves is expected to improve. It has become difficult.
  • Patent Document 2 proposes a technique for joining semiconductor elements using a metal paste having metal particles and an organic substance.
  • Patent Documents 3 and 4 propose a technique for joining an electronic component such as a semiconductor element on a circuit using an oxide paste containing metal oxide particles and a reducing agent made of an organic substance.
  • the metal paste described in Patent Document 2 contains metal particles and an organic substance, and the metal particles are sintered to form a bonding layer made of a conductive fired body. Thus, an electronic component such as a semiconductor element is bonded onto the circuit layer.
  • the metal particles produced by the reduction of the metal oxide particles by the reducing agent sinter so that the bonding layer made of a conductive fired body is obtained.
  • An electronic component such as a semiconductor element is bonded onto the circuit layer through the bonding layer.
  • the bonding layer can be formed at a relatively low temperature condition, and the bonding layer itself has a high melting point, so that the bonding strength is high even in a high temperature environment. It does not decline.
  • Patent Document 2 when a metal paste having metal particles and an organic substance is baked, gas is generated by a decomposition reaction of the organic substance.
  • Patent Documents 3 and 4 when sintering an oxide paste containing metal oxide particles and a reducing agent composed of an organic substance, in addition to the decomposition reaction of the organic substance, the metal oxide particles Gas is generated by the reduction reaction.
  • the sintering of the metal paste or the oxide paste is performed due to temperature non-uniformity. May progress from the peripheral edge of the joint surface toward the center.
  • the metal paste or oxide paste is sintered at the center of the joint surface, the sintering of the peripheral portion of the joint surface is complete, and the decomposition reaction of the organic matter generated at the center of the joint surface and the metal
  • the gas due to the reduction reaction of the oxide particles remains in the bonding layer, and the bonding strength between the semiconductor element and the circuit layer cannot be secured.
  • the present invention has been made in view of the above-described circumstances, and a circuit layer and a semiconductor element are reliably bonded using a bonding material including at least one or both of metal particles and metal oxide particles and an organic material.
  • Another object of the present invention is to provide a semiconductor device capable of efficiently transferring heat from a semiconductor element to the circuit layer side, a ceramic circuit board used in the semiconductor device, and a method for manufacturing the semiconductor device.
  • a semiconductor device of one embodiment of the present invention is a semiconductor device including a circuit layer made of a conductive material and a semiconductor element mounted on the circuit layer, and one surface of the circuit layer Includes a base layer having a porosity of 5% or more and 55% or less, and a bonding material containing at least one or both of metal particles and metal oxide particles and an organic substance on the base layer.
  • a bonding layer made of the fired body is formed, and the circuit layer and the semiconductor element are bonded via the base layer and the bonding layer.
  • the base layer having a porosity in the range of 5% to 55% is formed on one surface of the circuit layer, at least the metal particles and the metal oxide particles are formed. Even when sintering proceeds from the peripheral part to the central part of the joining surface of the semiconductor element and the circuit layer when forming the joining layer made of the fired body of the joining material containing one or both and the organic material, the joining surface
  • the gas generated by the decomposition reaction of the organic matter generated in the center of the metal and the reduction reaction of the metal oxide particles is discharged to the outside through the pores of the base layer, and no gas remains in the bonding layer. Therefore, the thermal resistance between the semiconductor element and the circuit layer can be suppressed, and the heat generated from the semiconductor element can be efficiently transferred to the circuit layer side.
  • the porosity of the underlayer is set in the range of 5% or more and less than 55%.
  • a semiconductor device is the semiconductor device according to (1), which includes the circuit layer and a ceramic substrate disposed on the other surface of the circuit layer.
  • a circuit board is provided, and the semiconductor element is a power semiconductor element.
  • the semiconductor device having this configuration heat can be efficiently transferred to the circuit layer even when a power semiconductor element that generates a large amount of heat is used.
  • the power semiconductor include an IGBT (Insulated Gate Bipolar Transistor) and a MOSFET.
  • a ceramic circuit board according to another aspect of the present invention is a ceramic circuit board used in the semiconductor device described in (2), wherein a circuit layer made of a conductive material and one surface of the circuit layer And a ceramic substrate disposed on the other surface of the circuit layer.
  • the foundation layer has a porosity in the range of 5% to 55%.
  • the base layer having a porosity in the range of 5% to 55% is formed on one surface of the circuit layer, the metal particles and the metal oxide particles Even when a semiconductor element is bonded on a circuit layer using a bonding material containing at least one or both and an organic material, a gas generated by a decomposition reaction of the organic material generated from the bonding material or a reduction reaction of the metal oxide is used. It can be discharged to the outside through the pores of the underlayer, and the gas can be prevented from remaining in the bonding layer made of the sintered body of the bonding material, so that the semiconductor elements can be bonded reliably.
  • a method for manufacturing a semiconductor device according to another aspect of the present invention is the method for manufacturing a semiconductor device according to (1) or (2), wherein a porosity of 5 is provided on one surface of the circuit layer.
  • An underlayer forming step for forming an underlayer within a range of not less than 50% and not more than 55%, and a bonding material including at least one or both of metal particles and metal oxide particles and an organic substance is disposed on the underlayer.
  • the bonding material disposing step Heating in a state in which the semiconductor element, the bonding material, the base layer, and the circuit layer are stacked, the bonding material disposing step to be provided; the semiconductor element stacking step of stacking the semiconductor element on the bonding material; A firing step of forming a joining layer made of a fired body of a joining material containing at least one or both of metal particles and metal oxide particles and an organic substance on the underlayer, and the circuit layer and the A semiconductor element, the underlayer and the junction Bonded through.
  • a base layer forming step of forming a base layer having a porosity in the range of 5% to 55% on one surface of the circuit layer And a firing step of forming a bonding layer made of a fired body of a bonding material containing at least one or both of metal particles and metal oxide particles and an organic substance.
  • the semiconductor element and the circuit are provided. Even if sintering progresses from the peripheral part of the joining surface of the layer toward the central part, the gas generated by the decomposition reaction of the organic matter and the reduction reaction of the metal oxide generated in the central part of the joining surface passes through the pores of the underlayer. It can discharge
  • the circuit layer and the semiconductor element are securely bonded using the bonding material including at least one or both of metal particles and metal oxide particles and an organic substance, and heat from the semiconductor element is transferred to the circuit layer side. It is possible to provide a semiconductor device capable of efficiently transmitting to the semiconductor device, a ceramic circuit board used in the semiconductor device, and a method for manufacturing the semiconductor device.
  • FIG. 2 is an enlarged explanatory view of a bonding interface between a circuit layer and a semiconductor element of the semiconductor device (power module) shown in FIG. 1.
  • FIG. 2 is an enlarged explanatory view of a bonding interface between a circuit layer and a semiconductor element of the semiconductor device (power module) shown in FIG. 1.
  • It is a schematic explanatory drawing of the semiconductor device (LED device) which is other embodiment of this invention.
  • It is a cross-sectional photograph of the foundation layer of Example 1 of the present invention in the examples. It is the image which carried out the binarization process of the cross-sectional photograph of the base layer of this invention example 1 in an Example.
  • the semiconductor device is a power module on which a power semiconductor element for high power control used for controlling an electric vehicle such as wind power generation or an electric vehicle is mounted.
  • FIG. 1 shows a power module (semiconductor device) according to an embodiment of the present invention.
  • the power module 1 includes a ceramic circuit board 10, a semiconductor element 3, and a cooler 40.
  • a circuit layer 12 is disposed on the ceramic circuit board 10.
  • the semiconductor element 3 is bonded to the first surface of the first surface (one surface, that is, the upper surface in FIG. 1) and the second surface (the other surface, that is, the lower surface in FIG. 1) of the circuit layer 12.
  • the cooler 40 is disposed on the other side of the ceramic circuit board 10.
  • the ceramic circuit board 10 includes a ceramic substrate 11, a circuit layer 12, and a metal layer 13.
  • the ceramic substrate 11 constitutes an insulating layer.
  • the circuit layer 12 is disposed on one surface (the upper surface in FIG. 1) of the ceramic substrate 11.
  • the metal layer 13 is disposed on the other surface (the lower surface in FIG. 1) of the ceramic substrate 11. That is, the ceramic substrate 11 has a first surface (one surface) and a second surface (the other surface), and the circuit layer 12 is disposed on the first surface of the ceramic substrate 11.
  • a metal layer 13 is disposed on the second surface of 11.
  • the ceramic substrate 11 prevents electrical connection between the circuit layer 12 and the metal layer 13, and has high insulating properties such as AlN (aluminum nitride), Si 3 N 4 (silicon nitride), and Al 2 O 3. (Alumina) or the like. In this embodiment, it is comprised with AlN (aluminum nitride) excellent in heat dissipation. Further, the thickness of the ceramic substrate 11 is set within a range of 0.2 to 1.5 mm, and in this embodiment is set to 0.635 mm.
  • the circuit layer 12 is formed by bonding one surface of the ceramic substrate 11 to a conductive aluminum or aluminum alloy, copper or copper alloy metal plate.
  • the circuit layer 12 is formed by joining rolled sheets of aluminum (so-called 4N aluminum) having a purity of 99.99% by mass or more.
  • the thickness of the circuit layer 12 is set in a range of 0.1 mm or more and 1.0 mm or less, and is set to 0.6 mm in the present embodiment.
  • a circuit pattern is formed on the circuit layer 12, and one surface (the upper surface in FIG. 1) is a bonding surface to which the semiconductor element 3 is bonded.
  • the metal layer 13 is formed by bonding a metal plate such as aluminum or aluminum alloy, copper or copper alloy to the other surface of the ceramic substrate 11.
  • the metal plate (metal layer 13) is an aluminum (so-called 4N aluminum) rolled plate having a purity of 99.99% by mass or more.
  • the thickness of the metal layer 13 is set within a range of 0.2 mm to 3.0 mm, and is set to 1.6 mm in the present embodiment.
  • the cooler 40 is for cooling the ceramic circuit board 10 described above, and includes a top plate portion 41, heat radiation fins 42, and flow paths 43.
  • the top plate portion 41 is joined to the ceramic circuit board 10.
  • the heat radiating fins 42 are hanged downward from the top plate portion 41.
  • the flow path 43 is provided for circulating a cooling medium (for example, cooling water).
  • the cooler 40 (top plate portion 41) is preferably made of a material having good thermal conductivity, and is made of A6063 (aluminum alloy) in the present embodiment.
  • the semiconductor element 3 is made of a semiconductor material such as Si, and a surface treatment film 3 a made of Ni, Au, or the like is formed on the joint surface with the circuit layer 12.
  • a base layer 31 and a bonding layer 38 are formed between the circuit layer 12 and the semiconductor element 3.
  • the base layer 31 and the bonding layer 38 are not formed on the entire surface of the circuit layer 12, and the portion where the semiconductor element 3 is disposed, that is, the bonding with the semiconductor element 3. It is selectively formed only on the surface.
  • the base layer 31 is formed on the circuit layer 12, and the bonding layer 38 is formed on the base layer 31.
  • the base layer 31 is a fired body of a glass-containing Ag paste containing a glass component.
  • the base layer 31 includes a glass layer 32 and an Ag layer 33.
  • the glass layer 32 is formed on the circuit layer 12 side. That is, the glass layer 32 is formed on the circuit layer 12.
  • the Ag layer 33 is formed on the glass layer 32.
  • fine conductive particles having a particle size of about several nanometers are dispersed.
  • the electroconductive particle in the glass layer 32 is observed by using a transmission electron microscope (TEM), for example. Further, glass particles having a particle size of about several micrometers are dispersed inside the Ag layer 33.
  • TEM transmission electron microscope
  • the electrical resistance value P in the thickness direction of the base layer 31 is set to 0.5 ⁇ or less.
  • the electrical resistance value P in the thickness direction of the foundation layer 31 is an electrical resistance value between the upper surface of the foundation layer 31 and the upper surface of the circuit layer 12. This is because the electrical resistance of aluminum (4N aluminum) constituting the circuit layer 12 is very small compared to the electrical resistance in the thickness direction of the base layer 31.
  • the center point of the upper surface of the base layer 31 is separated from the end portion of the base layer 31 by the same distance as the distance from the center point of the upper surface of the base layer 31 to the end portion of the base layer 31. The electrical resistance between the points on the circuit layer 12 is measured.
  • the base layer 31 has a plurality of pores, and the porosity is set in the range of 5% to 55%.
  • the pores formed in the base layer 31 are open pores open to the outside, and the outer peripheral surface of the base layer 31 (the outer peripheral edge portion of the joint surface between the circuit layer 12 and the semiconductor element 3). It is comprised so that it may open to.
  • This glass-containing Ag paste contains an Ag powder, a lead-free glass powder containing ZnO, a resin, a solvent, and a dispersant, and the content of a powder component composed of the Ag powder and the lead-free glass powder. However, it is 60 mass% or more and 90 mass% or less of the whole glass containing Ag paste, and the remainder is made into resin, a solvent, and a dispersing agent. In addition, in this embodiment, content of the powder component which consists of Ag powder and a lead-free glass powder is 85 mass% of the whole glass containing Ag paste.
  • the Ag powder has a particle size of 0.05 ⁇ m or more and 10 ⁇ m or less.
  • the porosity of the base layer 31 formed since there exists a tendency for the porosity of the base layer 31 formed to become high, so that the particle size of Ag powder is large, it is preferable to set it in the range of 10 micrometers or less exceeding 1.0 micrometer.
  • the shape of the Ag powder may be a spherical shape, may be a flat shape, or may be a mixture of these.
  • the lead-free glass powder contains Bi 2 O 3 , ZnO, and B 2 O 3 as main components, and has a glass transition temperature of 300 ° C. or higher and 450 ° C. or lower, a softening temperature of 600 ° C. or lower, and crystallization. The temperature is 450 ° C. or higher. Further, the viscosity of the glass-containing Ag paste is adjusted to 10 Pa ⁇ s or more and 500 Pa ⁇ s or less, more preferably 50 Pa ⁇ s or more and 300 Pa ⁇ s or less.
  • a solvent having a boiling point of 200 ° C. or more is suitable, and diethylene glycol dibutyl ether is used in this embodiment.
  • the resin is used to adjust the viscosity of the glass-containing Ag paste, and those that decompose at 500 ° C. or higher are suitable.
  • ethyl cellulose is used. Note that. By increasing the resin content, the porosity of the base layer 31 after firing tends to increase.
  • a dicarboxylic acid-based dispersant is added.
  • the bonding layer 38 formed on the base layer 31, that is, the Ag layer 33, is a fired body of a bonding material containing at least one or both of metal particles and metal oxide particles and an organic material.
  • a sintered body of silver oxide paste containing silver oxide and a reducing agent made of an organic material is used. That is, the bonding layer 38 is an Ag fired body obtained by reducing silver oxide.
  • the particles precipitated by reducing silver oxide are very fine, for example, with a particle size of 10 nm to 1 ⁇ m, so that a dense Ag fired layer is formed. That is, the fine particle size fills the space where the fine particles exist in the silver oxide paste during firing, and as a result, a dense Ag fired layer is formed.
  • the glass particles observed in the Ag layer 33 of the base layer 31 are not present or very few.
  • the silver oxide paste constituting the bonding layer 38 contains a silver oxide powder, a reducing agent, a resin, and a solvent. In this embodiment, in addition to these, an organic metal compound powder is contained. Yes.
  • the content of the silver oxide powder is 60% by mass or more and 92% by mass or less of the entire silver oxide paste, and the content of the reducing agent is 5% by mass or more and 15% by mass or less of the entire silver oxide paste.
  • the content is 0% by mass or more and 10% by mass or less of the entire silver oxide paste, and the remainder is a solvent.
  • the reducing agent is an organic substance having reducibility, and for example, alcohol and organic acid can be used.
  • the organometallic compound has an action of promoting the reduction reaction of silver oxide and the decomposition reaction of organic substances by the organic acid generated by thermal decomposition, for example, formic acid Ag, acetic acid Ag, propionic acid Ag, benzoic acid Ag, oxalic acid.
  • a carboxylic acid metal salt such as Ag is applied.
  • the silver oxide paste has a viscosity adjusted to 10 Pa ⁇ s to 100 Pa ⁇ s, more preferably 30 Pa ⁇ s to 80 Pa ⁇ s.
  • an aluminum plate to be the circuit layer 12 and an aluminum plate to be the metal layer 13 are prepared, and these aluminum plates are laminated on one surface and the other surface of the ceramic substrate 11 through brazing materials, respectively, and pressed. -The aluminum plate and the ceramic substrate 11 are joined by cooling after heating (circuit layer and metal layer forming step S01).
  • the brazing temperature is set to 640 ° C. to 650 ° C.
  • the cooler 40 is joined to the other surface side of the metal layer 13 via a brazing material (cooler joining step S02).
  • the brazing temperature of the cooler 40 is set to 590 ° C. to 610 ° C.
  • a glass containing Ag paste is apply
  • various means such as a screen printing method, an offset printing method, and a photosensitive process, are employable.
  • the glass-containing Ag paste is formed on the portion of the circuit layer 12 where the semiconductor element 3 is mounted by screen printing.
  • the glass-containing Ag paste is baked by being placed in a heating furnace (underlayer baking step S04). Since the porosity tends to increase when the firing temperature is low, in this embodiment, the firing temperature in the underlayer firing step S04 is set to 470 to 600 ° C.
  • the foundation layer 31 including the glass layer 32 and the Ag layer 33 is formed on one surface of the circuit layer 12. At this time, the aluminum oxide film naturally generated on the surface of the circuit layer 12 is melted and removed by the glass layer 32, and the glass layer 32 is formed directly on the circuit layer 12.
  • fine conductive particles having a particle size of about several nanometers are dispersed inside the glass layer 32.
  • the conductive particles are crystalline particles containing at least one of Ag and Al, and are presumed to have precipitated in the glass layer 32 during firing.
  • glass particles having a particle size of about several micrometers are dispersed inside the Ag layer 33. The glass particles are presumed to be agglomerated residual glass components in the course of the sintering of the Ag particles.
  • the underlayer 31 becomes porous, and the porosity is 5% or more and 55% or less. It will be set within the range. In this way, as shown in FIG. 3, the ceramic circuit board 10 according to this embodiment in which the base layer 31 is formed on one surface of the circuit layer 12 is manufactured.
  • a silver oxide paste is applied to the surface of the foundation layer 31 of the ceramic circuit board 10 (silver oxide paste application step S05).
  • various means such as a screen printing method, an offset printing method, and a photosensitive process, are employable.
  • the silver oxide paste was printed by the screen printing method.
  • the semiconductor element 3 is stacked on the silver oxide paste (semiconductor element stacking step S06). Then, the semiconductor element 3 and the ceramic circuit board 10 are stacked in a heating furnace, and the silver oxide paste is fired (bonding layer firing step S07). At this time, the load is 0 to 10 MPa and the firing temperature is 150 to 400 ° C. Desirably, the semiconductor element 3 and the ceramic circuit board 10 can be bonded more reliably by heating in a state where the semiconductor element 3 and the ceramic circuit board 10 are pressed in the stacking direction.
  • the bonding layer 38 is formed on the base layer 31, and the semiconductor element 3 and the circuit layer 12 are bonded. Thereby, the power module 1 which is this embodiment is manufactured.
  • the base layer 31 having a porosity in the range of 5% to 55% on one surface of the circuit layer 12. Therefore, when the circuit layer and the semiconductor element are bonded via the bonding layer 38 made of a sintered body of silver oxide paste containing silver oxide particles and a reducing agent, the reduction reaction of silver oxide or silver oxide The gas due to the decomposition reaction of the organic substance contained in the paste is discharged to the outside through the pores of the base layer 31, and the gas can be prevented from remaining in the bonding layer 38. Thereby, the thermal resistance between the semiconductor element 3 and the circuit layer 12 can be suppressed, and the heat generated from the semiconductor element 3 can be efficiently transmitted to the ceramic circuit board 10 side.
  • the porosity of the foundation layer 31 is set to 5% or more, the above-described gas can be reliably discharged, and the gas can be prevented from remaining in the bonding layer 38. . Further, since the porosity of the base layer 31 is set to 55% or less, the semiconductor element 3 and the circuit layer 12 are reliably bonded, and the bonding reliability between the semiconductor element 3 and the circuit layer is ensured. can do.
  • the bonding layer 38 is a fired body of silver oxide paste containing silver oxide and a reducing agent, the silver oxide is reduced by the reducing agent when the silver oxide paste is fired. It becomes fine silver particles, and the bonding layer 38 can have a dense structure. That is, the fine silver particles fill the space where the fine silver particles are present in the silver oxide paste during firing, and as a result, the bonding layer 38 having a dense structure is formed. Further, since the reducing agent is decomposed when the silver oxide is reduced, it is difficult to remain in the bonding layer 38 and the conductivity and strength in the bonding layer 38 can be ensured. Furthermore, since firing can be performed under a relatively low temperature condition such as 300 ° C., the junction temperature of the semiconductor element 3 can be kept low, and the thermal load on the semiconductor element 3 can be reduced.
  • the base layer 31 includes a glass layer 32 formed on one surface of the circuit layer 12 and an Ag layer 33 laminated on the glass layer 32, so that the circuit layer The oxide film formed on the surface of 12 can be removed by reacting with the glass layer 32, and the circuit layer 12 and the semiconductor element 3 can be reliably bonded.
  • fine conductive particles having a particle diameter of about several nanometers are dispersed inside the glass layer 32, and the conductivity is ensured also in the glass layer 32.
  • the electrical resistance value P in the thickness direction of the base layer 31 including the glass layer 32 is set to 0.5 ⁇ or less, the semiconductor element 3 and the circuit layer 12 are connected via the base layer 31 and the bonding layer 38. It is possible to reliably conduct electricity between the two, and a highly reliable power module 1 can be configured.
  • the glass-containing Ag paste is used to describe the foundation layer 31 having a porosity of 5% or more and 55% or less.
  • the present invention is not limited to this, and beads are included in the paste. It may be contained to form pores in the underlayer, or a foaming agent may be contained in the paste to form pores in the underlayer. Regardless of the production method, the porosity of the underlying layer may be set in the range of 5% to 55%.
  • the raw material and blending amount of the glass-containing Ag paste are not limited to those described in the embodiment.
  • the glass containing lead may be sufficient.
  • the silver oxide paste containing silver oxide as a joining material which forms a joining layer, it is not limited to this, It contains other metal particles or metal oxide particles, such as gold and copper It may be a paste.
  • the raw material and compounding quantity of a silver oxide paste it is not limited to what was described in embodiment. For example, it may not contain an organometallic compound.
  • the silver oxide paste may contain Ag particles in addition to the silver oxide powder and the reducing agent.
  • the Ag particles When the Ag particles are interposed between the silver oxide powders, Ag obtained by reducing the silver oxide and the Ag particles are sintered, and the bonding layer can be made more dense. Thereby, it becomes possible to set the pressurization pressure of the semiconductor element at the time of joining low.
  • the surface layer of the Ag particles may contain an organic substance. In this case, it is possible to improve the sinterability at a low temperature by using heat when the organic substance is decomposed.
  • the thickness of the glass layer 32 and the Ag layer 33 in the base layer 31 and the thickness of the bonding layer 38 are not limited to the present embodiment.
  • the bonding layer can be formed of a paste containing Ag powder.
  • This paste can be composed of Ag powder, a resin, and a solvent.
  • the Ag powder is sintered at the time of heating, and a gas resulting from a decomposition reaction of an organic substance such as a resin or a solvent is discharged to the outside through pores of the base layer, thereby forming a dense bonding layer. It becomes possible. That is, the gas resulting from the decomposition reaction of the organic substance such as resin or solvent is discharged outside through the pores of the base layer 31, so that it does not remain in the bonding layer, and as a result, the bonding layer in the bonding layer. There is no formation of cavities or the like due to residual gas. Accordingly, a dense bonding layer can be formed.
  • the circuit layer and the metal layer are described as being configured by an aluminum plate.
  • the present invention is not limited to this, and the circuit layer and the metal layer may be an aluminum plate, an aluminum alloy plate, a copper plate, or a copper plate. You may be comprised with the alloy board.
  • a ceramic substrate made of AlN is not limited thereto, it may be used a ceramic substrate made of Si 3 N 4 or Al 2 O 3, or the like, insulating The insulating layer may be made of resin.
  • the base layer is formed on the circuit layer.
  • the base layer may be formed before bonding to the ceramic substrate or before bonding the cooler.
  • the top plate part of the cooler with aluminum
  • it may be comprised with the aluminum alloy, the composite material containing aluminum, etc., and may be comprised with the other material.
  • a cooler having the radiation fin and the flow path of a cooling medium, there is no limitation in particular in the structure of a cooler.
  • the power module on which the power semiconductor element is mounted is described as an example of the semiconductor device.
  • the semiconductor element is formed on the circuit layer made of a conductive material. It may be a mounted semiconductor device.
  • an LED device semiconductor device on which an LED element (semiconductor element) is mounted may be used.
  • An LED device 101 shown in FIG. 5 includes a light emitting element 103 and a circuit layer 112 made of a conductive material. Note that the light-emitting element 103 is electrically connected to the circuit layer 112 by a bonding wire 107 and has a structure in which the light-emitting element 103 and the bonding wire 107 are sealed with a sealing material 108. On one surface of the circuit layer 112, a base layer 131 having a porosity in the range of 5% to 55% is provided. On the back surface of the light emitting element 103, a conductive reflective film 116 and a protective film are provided. 115 is provided.
  • a bonding layer 138 made of a fired body of a bonding material containing at least one or both of metal particles and metal oxide particles and an organic material is formed on the base layer 131, and the light emitting element 103, the circuit layer 112, and the like. However, the structure is bonded through the base layer 131 and the bonding layer 138. Also in such an LED device 101, since the base layer 131 having a porosity in the range of 5% to 55% is provided on one surface of the circuit layer 112, the decomposition reaction of organic matter or Gas due to the reduction reaction of the metal oxide particles can be discharged to the outside through the pores of the base layer 131, and the gas can be prevented from remaining in the bonding layer 138.
  • the ceramic circuit board was manufactured by brazing and bonding an aluminum plate which is a circuit layer on one surface of the ceramic substrate and a metal layer on the other surface.
  • the ceramic substrate was AlN
  • the size was 27 mm ⁇ 17 mm ⁇ 0.6 mm.
  • the aluminum plate used as the circuit layer was 4N aluminum having a purity of 99.99% by mass or more, and the size was 25 mm ⁇ 15 mm ⁇ 0.6 mm.
  • the aluminum plate used as the metal layer was 4N aluminum having a purity of 99.99% or more, and the size was 25 mm ⁇ 15 mm ⁇ 1.6 mm.
  • the size of the semiconductor element was 13 mm ⁇ 10 mm ⁇ 0.25 mm.
  • a base layer was formed on an aluminum plate by screen printing.
  • the coating thickness of the glass-containing Ag paste was 10 ⁇ m.
  • the shape of the Ag powder contained in the glass-containing Ag paste, the particle diameter, and the firing conditions of the glass-containing Ag paste were adjusted as shown in Table 1.
  • the porosity of the base layer formed as described above was evaluated as follows. After cutting the obtained ceramic circuit board and mechanically polishing the cross section of the underlayer, Ar ion etching (Cross Section Polisher SM-09010 made by JEOL Ltd.) was performed, and laser microscope (VK X-200 made by Keyence Corporation) was performed. ) was used for cross-sectional observation. The obtained image was binarized, and the white part was Ag and glass, and the black part was pores.
  • FIG. 6A A cross-sectional observation photograph of Example 1 of the present invention is shown in FIG. 6A, and an image obtained by binarizing the cross-section observation photograph is shown in FIG. 6B.
  • the semiconductor element and the circuit layer were joined using the silver oxide paste exemplified in the embodiment.
  • the coating thickness of the silver oxide paste was 50 ⁇ m, and the firing conditions were a firing temperature of 300 ° C., a firing time of 10 minutes, and a load of 3 MPa. As a result, various semiconductor devices were produced.
  • initial joining rate (initial bonding area-non-bonding area) / initial bonding area
  • the initial bonding rate was 70%. It is presumed that the gas generated during the firing of the silver oxide paste remains in the bonding layer and voids are generated.
  • the initial bonding rate is 88%, which is higher than that of the conventional example, but the thermal resistance is higher than that of the conventional example. This is presumably because heat from the semiconductor element cannot be efficiently transferred to the circuit layer side due to the presence of many pores in the underlayer.
  • Example 1-9 of the present invention in which the porosity of the underlayer was set in the range of 5% or more and 55% or less, the initial bonding rate was as high as 90% or more and the thermal resistance was also higher than that of the conventional example. It is low. From the above, according to the present invention example, it is confirmed that a semiconductor device can be obtained in which the circuit layer and the semiconductor element are reliably bonded and heat from the semiconductor element can be efficiently transferred to the circuit layer side. It was done.
  • the circuit layer and the semiconductor element are securely bonded using the bonding material including at least one or both of metal particles and metal oxide particles and an organic substance, and heat from the semiconductor element is transferred to the circuit layer side. It is possible to provide a semiconductor device capable of efficiently transmitting to the semiconductor device, a ceramic circuit board used in the semiconductor device, and a method for manufacturing the semiconductor device.
  • Power module (semiconductor device) 3 Semiconductor element 10 Ceramic circuit board 11 Ceramic board (insulating layer) 12 Circuit layer 31 Underlayer 38 Bonding layer 101 LED device (semiconductor device) 103 Light Emitting Element (Semiconductor Element) 112 Circuit layer 131 Underlayer 138 Bonding layer

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PCT/JP2013/077217 2012-10-09 2013-10-07 半導体装置、セラミックス回路基板及び半導体装置の製造方法 WO2014057902A1 (ja)

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KR1020157008678A KR102163532B1 (ko) 2012-10-09 2013-10-07 반도체 장치, 세라믹스 회로 기판 및 반도체 장치의 제조 방법
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