WO2014050455A1 - 半導体装置製造用仮接着剤、並びに、それを用いた接着性支持体、及び、半導体装置の製造方法 - Google Patents

半導体装置製造用仮接着剤、並びに、それを用いた接着性支持体、及び、半導体装置の製造方法 Download PDF

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Publication number
WO2014050455A1
WO2014050455A1 PCT/JP2013/073669 JP2013073669W WO2014050455A1 WO 2014050455 A1 WO2014050455 A1 WO 2014050455A1 JP 2013073669 W JP2013073669 W JP 2013073669W WO 2014050455 A1 WO2014050455 A1 WO 2014050455A1
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Prior art keywords
group
adhesive
semiconductor device
treated
temporary
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
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PCT/JP2013/073669
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English (en)
French (fr)
Japanese (ja)
Inventor
悠 岩井
一郎 小山
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Fujifilm Corp
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Fujifilm Corp
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Priority to KR1020157007079A priority Critical patent/KR101678873B1/ko
Publication of WO2014050455A1 publication Critical patent/WO2014050455A1/ja
Priority to US14/641,656 priority patent/US20150184032A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J4/00—Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J101/00—Adhesives based on cellulose, modified cellulose, or cellulose derivatives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J101/00—Adhesives based on cellulose, modified cellulose, or cellulose derivatives
    • C09J101/08—Cellulose derivatives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J101/00—Adhesives based on cellulose, modified cellulose, or cellulose derivatives
    • C09J101/08—Cellulose derivatives
    • C09J101/10—Esters of organic acids
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J101/00—Adhesives based on cellulose, modified cellulose, or cellulose derivatives
    • C09J101/08—Cellulose derivatives
    • C09J101/10—Esters of organic acids
    • C09J101/12—Cellulose acetate
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J101/00—Adhesives based on cellulose, modified cellulose, or cellulose derivatives
    • C09J101/08—Cellulose derivatives
    • C09J101/10—Esters of organic acids
    • C09J101/14—Mixed esters, e.g. cellulose acetate-butyrate
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J101/00—Adhesives based on cellulose, modified cellulose, or cellulose derivatives
    • C09J101/08—Cellulose derivatives
    • C09J101/26—Cellulose ethers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J125/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Adhesives based on derivatives of such polymers
    • C09J125/02—Homopolymers or copolymers of hydrocarbons
    • C09J125/04—Homopolymers or copolymers of styrene
    • C09J125/06—Polystyrene
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer

Definitions

  • the present invention relates to a temporary adhesive for producing a semiconductor device, an adhesive support using the same, and a method for producing a semiconductor device.
  • a wire bonding method has conventionally been widely known as an electrical connection method from an integrated circuit in an IC chip to an external terminal of the IC chip
  • a silicon substrate has recently been used to achieve miniaturization of the IC chip.
  • a method so-called method of forming a silicon through electrode (TSV)
  • TSV silicon through electrode
  • the method of forming the through silicon via alone can not sufficiently meet the above-mentioned recent need for higher integration of the IC chip.
  • a semiconductor silicon wafer having a thickness of about 700 to 900 ⁇ m is widely known as a semiconductor silicon wafer used in a process of manufacturing a semiconductor device. It has been attempted to reduce the thickness to 200 .mu.m or less. However, since semiconductor silicon wafers having a thickness of 200 ⁇ m or less are very thin and, consequently, members for manufacturing semiconductor devices based on them are also very thin, such members may be further processed or In the case of simply moving such a member, it is difficult to support the member stably and without damage.
  • a semiconductor wafer before thinning on which a device is provided on the surface and a processing supporting substrate are temporarily bonded with a silicone adhesive, and the back surface of the semiconductor wafer is ground and thinned There is known a technique in which a semiconductor wafer is perforated to form a silicon through electrode, and thereafter, a processing support substrate is detached from the semiconductor wafer (see Patent Document 1). According to this technology, resistance to grinding during backside grinding of semiconductor wafers, heat resistance in anisotropic dry etching processes, etc., chemical resistance during plating and etching, and smooth peeling from the final support substrate for processing It is believed that low adherent contamination can be achieved simultaneously.
  • a method of supporting a wafer is a method of supporting a wafer by a support layer system, in which a plasma polymer layer obtained by a plasma deposition method is interposed as a separation layer between the wafer and the support layer system.
  • the adhesive bond between the support layer system and the release layer is made greater than the bond bond between the wafer and the release layer, and the wafer is easily released from the release layer when the wafer is released from the support layer system.
  • Patent Document 2 There is also known a technology configured to separate.
  • a pressure-sensitive adhesive film which is composed of syndiotactic 1,2-polybutadiene and a photopolymerization initiator and whose adhesive force is changed by irradiation of radiation (see Patent Document 6). Further, the supporting substrate and the semiconductor wafer are temporarily bonded with an adhesive made of polycarbonates, and the semiconductor wafer is treated, then irradiated with irradiation radiation, and then heated to thereby process the treated semiconductor wafer. There is known a technique for detaching the support substrate from the support substrate (see Patent Document 7).
  • a pressure-sensitive adhesive composition comprising an energy ray-curable copolymer having an energy ray-polymerizable unsaturated group in a side chain, an epoxy resin, and a heat-activated latent epoxy resin curing agent.
  • a pressure-sensitive adhesive tape which is made of a pressure-sensitive adhesive layer and whose adhesive force is changed by irradiation of radiation (see Patent Document 8).
  • the surface of the semiconductor wafer on which the device is provided (that is, the device surface of the device wafer) and the supporting substrate (carrier substrate) are temporarily adhered via a layer made of an adhesive known in Patent Document 1 and the like.
  • the adhesive layer is required to have a certain degree of adhesion in order to stably support the semiconductor wafer. Therefore, in the case where the entire surface of the device surface of the semiconductor wafer and the supporting substrate are temporarily bonded via the adhesive layer, the temporary bonding between the semiconductor wafer and the supporting substrate is made sufficient, and the semiconductor wafer is stabilized stably.
  • the temporary adhesion between the semiconductor wafer and the support substrate is too strong to support the substrate without damaging it, so that the device may be damaged when the semiconductor wafer is detached from the support substrate, or from the semiconductor wafer It is easy for the problem that the device is detached.
  • the plasma polymer layer as the separation layer is interposed between the wafer and the support layer system by plasma deposition.
  • the formation method is (1) usually, the equipment cost for carrying out plasma deposition is large; (2) layer formation by plasma deposition requires time for vacuuming in the plasma apparatus and deposition of monomers; (3) Even when a separation layer comprising a plasma polymer layer is provided, when supporting a wafer to be processed, the support of the wafer is released while securing sufficient adhesive bonding between the wafer and the separation layer. In such cases, it is not easy to control an adhesive bond such that the wafer is easily detached from the separation layer;
  • An adhesive using a polymer obtained by polymerizing styrenic monomers described in Patent Documents 9 to 15 has insufficient adhesiveness.
  • the adhesive having cellulose as an additive described in Patent Document 16 has insufficient adhesion.
  • the present invention has been made in view of the above background, and an object thereof is to increase mechanical resistance or chemical treatment on a member to be treated (such as a semiconductor wafer) even at high temperature (for example, 100 ° C.).
  • the adhesion can temporarily support the member to be treated, reduce the problem that the adhesive generates gas even in temporary support under high temperature, and further, temporarily support the treated member without damaging the treated member.
  • A a polymer compound having a thermal decomposition initiation temperature of 250 ° C. or more
  • a ′ a styrene monomer
  • the member to be treated can be temporarily supported with high adhesive strength even at high temperatures (for example, 100 ° C.), and after treatment of the member to be treated, the adhesive layer can be It is not necessary to perform heating, irradiation with actinic rays or radiation, as in the prior art, by contacting with a peeling solvent, or without performing any treatment, to the treated member.
  • the present inventors have found that the use of the above-mentioned temporary adhesive makes it difficult for the adhesive to generate gas during temporary support under high temperature, which results in The inventors have found that the problem of contamination of the apparatus (eg, exposure apparatus, vacuum chamber, etc.) used in each process of the manufacturing method can be reduced, and the present invention has been completed. It is.
  • the apparatus eg, exposure apparatus, vacuum chamber, etc.
  • the temporary adhesive for semiconductor device manufacture which contains a high molecular compound (A) thermal decomposition start temperature 250 degreeC or more, and the (B) radically polymerizable monomer.
  • the temporary adhesive for semiconductor device manufacture which contains the high molecular compound formed by polymerizing a (A ') styrenic monomer, (B) radically polymerizable monomer, and (C) thermal radical polymerization initiator.
  • the temporary adhesive for semiconductor device manufacture which contains (A ′ ′) cellulose or a cellulose derivative and (B) a radically polymerizable monomer.
  • (C) a thermal radical polymerization initiator The temporary adhesive for producing a semiconductor device according to the above [5] or [9], wherein the thermal decomposition temperature of the thermal radical polymerization initiator (C) is 95 ° C. to 270 ° C.
  • a group represented by the following general formula (1) a group represented by the following general formula (2), wherein the polymer compound (A), (A ′) or (A ′ ′) is used as the radical polymerizable group;
  • the temporary adhesive for semiconductor device manufacture as described in said [14] which has 1 or more types of groups chosen from the group which consists of and represented by following General formula (3).
  • X and Y each independently represent an oxygen atom, a sulfur atom or -N (R 12 )-.
  • Z represents an oxygen atom, a sulfur atom, -N (R 12 )-or a phenylene group.
  • R 1 to R 12 each independently represent a hydrogen atom or a monovalent substituent.
  • An adhesive support comprising a substrate and an adhesive layer formed on the substrate by the temporary adhesive for producing a semiconductor device according to any one of the above [1] to [15].
  • the to-be-treated member has a to-be-treated substrate, and a protective layer provided on the first surface of the to-be-treated substrate, The surface of the protective layer opposite to the substrate to be treated is taken as the first surface of the member to be treated,
  • the member to be treated when subjecting a member to be treated mechanically or chemically, the member to be treated can be temporarily supported by high adhesion even at high temperatures (for example, 100 ° C.), and even in temporary support at high temperatures
  • the temporary adhesive for semiconductor device manufacture which can reduce the problem that an adhesive generates gas, and can release temporary support to a processed member without damaging the processed member, and adhesion using the same And a method of manufacturing a semiconductor device.
  • FIGS. 1A and 1B are schematic cross-sectional views illustrating temporary bonding between an adhesive support and a device wafer, and a schematic cross-sectional view showing a thinned state of a device wafer temporarily bonded by an adhesive support.
  • FIG. It is a schematic sectional drawing explaining cancellation
  • FIGS. 3A, 3B, 3C, and 3D are schematic cross-sectional views for explaining temporary adhesion between an adhesive support and a device wafer with a protective layer, respectively, a device wafer with a protective layer temporarily adhered by an adhesive support.
  • FIG. 1 is a schematic sectional view showing a thinned state, a schematic sectional view showing a thin device wafer with a protective layer peeled from an adhesive support, and a schematic sectional view showing a thin device wafer.
  • FIGS. 4A and 4B are schematic cross-sectional views illustrating the thinned state of the device wafer temporarily bonded by the adhesive support, and the device wafer with protective layer temporarily bonded by the adhesive support. It is a schematic sectional drawing explaining the state by which it was thinned.
  • FIG. 5A shows a schematic cross-sectional view illustrating exposure to an adhesive support
  • FIG. 5B shows a schematic top view of the mask.
  • FIG. 6A shows a schematic cross-sectional view of the pattern-exposed adhesive support
  • FIG. 6B shows a schematic top view of the pattern-exposed adhesive support.
  • FIG. 2 shows a schematic cross-sectional view illustrating irradiation of an adhesive support with actinic rays or radiation or heat.
  • FIG. 8 is a schematic top view of an adhesive support according to another embodiment of the present invention.
  • FIG. 9 is a schematic top view of an adhesive support according to another embodiment of the present invention.
  • FIG. 10 is a schematic top view of an adhesive support according to another embodiment of the present invention.
  • FIG. 11 is a schematic top view of an adhesive support according to another embodiment of the present invention.
  • FIG. 12 is a schematic top view of an adhesive support according to another embodiment of the present invention.
  • FIG. 13 is a schematic top view of an adhesive support according to another embodiment of the present invention.
  • FIG. 14 is a schematic top view of an adhesive support according to another embodiment of the present invention.
  • FIG. 15 is a schematic top view of an adhesive support according to another embodiment of the present invention.
  • FIG. 16 is a schematic top view of an adhesive support according to another embodiment of the present invention.
  • FIG. 17 is a schematic top view of an adhesive support according to another embodiment of the present invention.
  • FIG. 18 is a schematic top view of an adhesive support according to another embodiment of the present invention.
  • the notations not describing substitution and non-substitution include those having no substituent and those having a substituent.
  • the "alkyl group” includes not only an alkyl group having no substituent (unsubstituted alkyl group) but also an alkyl group having a substituent (substituted alkyl group).
  • active light or “radiation” means, for example, visible light, ultraviolet light, far ultraviolet light, electron beam, X-ray and the like.
  • light means actinic rays or radiation.
  • the "exposure” in the present specification means not only exposure by a mercury lamp, ultraviolet rays, far ultraviolet rays represented by an excimer laser, X-rays, EUV light, etc., but also electron beams and ion beams. It also means drawing by particle beam.
  • “(meth) acrylate” represents acrylate and methacrylate
  • “(meth) acrylic represents acrylic and methacrylic
  • a polymerizable compound is a compound having a polymerizable group, and may be a monomer or a polymer.
  • the polymerizable group is a group involved in a polymerization reaction. say.
  • the temporary adhesive for producing a semiconductor device of the present invention (hereinafter, also simply referred to as "temporary adhesive") is (A) a polymer compound having a thermal decomposition initiation temperature of 250 ° C. or higher, and (B) a radically polymerizable monomer Contains Another temporary adhesive of the present invention contains (A ') a polymer compound obtained by polymerizing a styrene-based monomer, (B) a radically polymerizable monomer, and (C) a thermal radical polymerization initiator. doing. Furthermore, another temporary adhesive of the present invention contains (A ′ ′) cellulose or a cellulose derivative and (B) a radically polymerizable monomer.
  • the temporary adhesive for manufacturing a semiconductor device of the present invention when mechanical or chemical treatment is performed on a member to be treated, the member to be treated can be temporarily supported with high adhesive force, and damage to the treated member is caused. As a result, a temporary adhesive for semiconductor device manufacture can be obtained which can release temporary support for the processed member. It is preferable that the temporary adhesive for semiconductor device manufacture of this invention is for silicon penetration electrode formation. The formation of the through silicon via will be described in detail later.
  • the polymer compound (A) used for the temporary adhesive for producing a semiconductor device of the present invention is a polymer compound having a thermal decomposition start temperature of 250 ° C. or higher .
  • the thermal decomposition start temperature in the present invention is measured by heating the polymer at a temperature rising rate of 20 ° C./min.
  • a polymer film is formed on a suitable support to prepare a sample. The sample is heated in nitrogen at a heating rate of 10 ° C./min, the mass is measured continuously, and the temperature at which the mass is reduced by 5% is defined as the thermal decomposition onset temperature.
  • TA Instruments Q500 or Q50 can be used as a device for measuring the thermal decomposition start temperature.
  • the polymer compound having a thermal decomposition start temperature of 250 ° C. or higher includes polystyrene resin (including polymer compound formed by polymerizing styrenic monomer), polyimide resin, Teflon (registered trademark), polyamide resin, polycarbonate resin, Polyphenylene ether resin, polysulfone resin, polyether sulfone resin, polyarylate resin, polyether ether ketone resin, polyamide imide resin, cycloolefin polymer (norbornene polymer, polymer of monocyclic olefin, polymer of cyclic conjugated diene And vinyl alicyclic hydrocarbon polymers, hydrides of these polymers, and the like), cellulose, cellulose derivatives, polymer compounds having a radically polymerizable group, and the like.
  • the polymer compounds may be used in combination of two or more, if necessary.
  • a cellulose or a cellulose derivative, or a polystyrene resin (including a polymer compound obtained by polymerizing a styrenic monomer) can be preferably used. And cellulose or cellulose derivatives are more preferably used.
  • the thermal decomposition initiation temperature of the polymer compound (A) is more preferably 250 ° C. or higher, and still more preferably 300 ° C. or higher.
  • the thermal decomposition initiation temperature of the polymer compound (A) is usually 400 ° C. or less.
  • the thermal decomposition start temperature of the polymer compound (A) is less than 250 ° C., it is difficult to temporarily support the member to be treated due to high adhesive force at high temperatures (eg 100 ° C.) Likely to happen.
  • A-1) Cellulose or Cellulose Derivative
  • Cellulose or cellulose derivative which can be used in the present invention can be freely used if it is conventionally known cellulose or cellulose derivative. More specifically, a cellulose or a cellulose derivative represented by the following general formula (1) is preferable.
  • R 1 to R 6 each independently represent a hydrogen atom or a monovalent organic group.
  • N represents an integer of 2 or more.
  • an alkyl group an alkylcarbonyl group, an arylcarbonyl group, an alkyloxycarbonyl group, an aryloxycarbonyl group, and an aminocarbonyl group are preferable. .
  • the alkyl group is a linear, branched or cyclic alkyl group, preferably an alkyl group having 1 to 20 carbon atoms, and more preferably an alkyl group having 1 to 10 carbon atoms.
  • Specific examples of the alkyl group include methyl group, ethyl group, propyl group, octyl group, isopropyl group, t-butyl group, isopentyl group, 2-ethylhexyl group, 2-methylhexyl group, cyclopentyl group and the like.
  • the alkylcarbonyl group is preferably an alkylcarbonyl group having 2 to 20 carbon atoms, and more preferably an alkylcarbonyl group having 2 to 10 carbon atoms.
  • alkylcarbonyl group examples include acetyl group, ethyl carbonyl group, propyl carbonyl group, n-butyl carbonyl group, t-butyl carbonyl group, n-octyl carbonyl group, isopropyl carbonyl group, isopentyl carbonyl group, 2-ethylhexyl Examples thereof include a carbonyl group and 2-methylhexyl carbonyl group.
  • the arylcarbonyl group is preferably an arylcarbonyl group having 7 to 20 carbon atoms. Specific examples of the arylcarbonyl group include benzoyl group and pn-octyloxyphenylcarbonyl group.
  • the alkyloxycarbonyl group is preferably an alkyloxycarbonyl group having 2 to 20 carbon atoms. Specific examples of the alkyloxycarbonyl group include methoxycarbonyl group, ethoxycarbonyl group, t-butoxycarbonyl group, n-octadecyloxycarbonyl group and the like.
  • the aryloxycarbonyl group is preferably an aryloxycarbonyl group having 7 to 20 carbon atoms. Specific examples of the aryloxycarbonyl group include a phenoxycarbonyl group, an o-chlorophenoxycarbonyl group, an m-nitrophenoxycarbonyl group and a p-t-butylphenoxycarbonyl group.
  • the aminocarbonyl group is more preferably an aminocarbonyl group having 2 to 15 carbon atoms (more preferably an alkylaminocarbonyl group having 2 to 15 carbon atoms).
  • Specific examples of the aminocarbonyl group include methylaminocarbonyl group, dimethylaminocarbonyl group, anilinocarbonyl group, N-methyl-anilinocarbonyl group, diphenylaminocarbonyl group.
  • the monovalent organic group represented by R 1 to R 6 is preferably a hydrogen atom or an alkylcarbonyl group, and most preferably an acetyl group.
  • At least one of R 1 to R 6 is preferably an acetyl group, preferably two or more are acetyl groups, and most preferably three or more are acetyl groups.
  • N is preferably 2 to 4000, and more preferably 4 to 2000.
  • EASTMAN CAB EASTMAN CAP
  • EASTMAN CA EASTMAN CHEMICAL
  • polystyrene resins (polymer compounds obtained by polymerizing styrenic monomers) that can be used in the present invention will be described in detail.
  • A-2) Polymer compound formed by polymerizing styrenic monomer
  • the polymer compound used for the temporary adhesive for producing a semiconductor device of the present invention is a polymer compound formed by polymerizing styrenic monomer ( It is also preferable that it is A-2).
  • the styrene-based monomer of the present invention means a compound having a styrene structure, and styrene such as styrene and alkylstyrene (for example, methylstyrene, dimethylstyrene, trimethylstyrene, ethylstyrene, diethylstyrene, isopropylstyrene, butylstyrene, Hexylstyrene, cyclohexylstyrene, decylstyrene, benzylstyrene, chloromethylstyrene, trifluoromethylstyrene, ethoxymethylstyrene, acetoxymethylstyrene etc., alkoxystyrene (eg methoxystyrene, 4-methoxy-3-methylstyrene, dimethoxystyrene etc.
  • the content of repeating units derived from styrenic monomers is preferably 1 to 100 mol%, more preferably 40 to 95 mol%, based on all repeating units of the polymer compound (A). More preferably, it is 60 to 90 mol%.
  • the polymer compound (A) is preferably copolymerized with other monomers in addition to the styrenic monomer.
  • (meth) acrylic monomers can be suitably mentioned.
  • monomers selected from N, N-disubstituted methacrylamides, acrylonitriles, methacrylonitriles and the like are examples of acrylic acid, acrylic acid, acrylic esters, methacrylic esters, N, N-disubstituted acrylamides
  • acrylic esters such as alkyl acrylate (the alkyl group preferably has 1 to 20 carbon atoms) and the like (specifically, for example, methyl acrylate, ethyl acrylate, acrylic) Propyl acrylate, butyl acrylate, amyl acrylate, ethyl hexyl acrylate, octyl acrylate, t-octyl acrylate, chloroethyl acrylate, 2,2-dimethylhydroxypropyl acrylate, 5-hydroxypentyl acrylate, trimethylolpropane monoacrylate , Pentaerynuritol monoacrylate, glycidyl acrylate, benzyl acrylate, methoxybenzyl acrylate, furfuryl acrylate, tetrahydrofurfuryl acrylate etc., aryl acrylates (eg, Methacrylic acid esters such as phenyl acrylate and the alkyl acryl
  • the content of repeating units derived from other monomers is preferably 1 to 97 mol%, more preferably 5 to 60 mol%, based on all repeating units of the polymer compound (A). More preferably, it is 10 to 40 mol%.
  • the polymer compound (A) preferably has a radical polymerizable group (preferably, a radical polymerizable group in a side chain).
  • a radically polymerizable group is a group which can be polymerized by the action of a radical.
  • the adhesive support is adhered to the member to be treated and then heat treatment is performed, whereby the polymerization reaction further proceeds by the radicals generated from the thermal radical polymerization initiator,
  • the to-be-processed member can be temporarily supported by higher adhesive force.
  • a polymerization reaction occurs in the exposed area.
  • the adhesive layer can be provided with areas of high and low adhesion.
  • the adhesive layer of the adhesive support is irradiated with an actinic ray, radiation or heat to form a radical polymerizable group of the polymer compound.
  • a polymerization reaction can be carried out to form an adhesive layer with reduced adhesion from the inner surface to the outer surface of the substrate side. That is, the adhesion between the substrate and the adhesive layer in the adhesive support can be made high while the adhesion of the adhesive layer to the member to be treated can be lowered.
  • the radically polymerizable group is preferably, for example, a functional group capable of undergoing an addition polymerization reaction, and examples of the functional group capable of undergoing an addition polymerization reaction include an ethylenically unsaturated group.
  • the ethylenic unsaturated bond group is preferably a styryl group, an allyl group, a (meth) acryloyl group, a vinyl group, a vinyloxy group or an alkynyl group.
  • free radicals polymerization initiating radicals or propagating radicals in the polymerization process of the polymerizable compound
  • polymer chains of polymer compounds directly or polymerization chains of polymerizable monomers are added.
  • atoms of the polymer compound for example, a hydrogen atom on a carbon atom adjacent to a functional crosslinking group
  • Crosslinks are formed between them to cure.
  • the polymer compound (A) is, as a radically polymerizable group, a group represented by the following general formula (1), a group represented by the following general formula (2), and the following general formula (3) It is preferable to have 1 or more types of groups chosen from the group which consists of a group represented by, and it is more preferable to have a group represented by following General formula (1).
  • X and Y each independently represent an oxygen atom, a sulfur atom or -N (R 12 )-.
  • Z represents an oxygen atom, a sulfur atom, -N (R 12 )-or a phenylene group.
  • R 1 to R 12 each independently represent a hydrogen atom or a monovalent substituent.
  • R 1 to R 3 each independently represent a hydrogen atom or a monovalent substituent, and for example, R 1 is a hydrogen atom or a monovalent organic group, for example, having a substituent.
  • the alkyl group etc. which may be mentioned are mentioned, Especially, a hydrogen atom, a methyl group, a methyl alkoxy group, and a methyl ester group are preferable.
  • R 2 and R 3 may each independently have a hydrogen atom, a halogen atom, an amino group, a dialkylamino group, a carboxyl group, an alkoxycarbonyl group, a sulfo group, a nitro group, a cyano group or a substituent Alkyl group, aryl group which may have a substituent, alkoxy group which may have a substituent, aryloxy group which may have a substituent, alkylamino group which may have a substituent, substitution Arylamino group which may have a group, alkylsulfonyl group which may have a substituent, arylsulfonyl group which may have a substituent, etc., among which hydrogen atom, carboxyl group, alkoxycarbonyl group It is preferably an alkyl group which may have a substituent or an aryl group which may have a substituent.
  • examples of the substituent which can be introduced include a methoxycarbonyl group, an ethoxycarbonyl group, an isopropyloxycarbonyl group, a methyl group, an ethyl group, a phenyl group and the like.
  • X represents an oxygen atom, a sulfur atom, or -N (R 12 )-, and R 12 includes a hydrogen atom, an alkyl group which may have a substituent, and the like.
  • R 4 to R 8 each independently represent a hydrogen atom or a monovalent substituent, and for example, a hydrogen atom, a halogen atom, an amino group, a dialkylamino group, a carboxyl group, an alkoxycarbonyl group A sulfo group, a nitro group, a cyano group, an alkyl group which may have a substituent, an aryl group which may have a substituent, an alkoxy group which may have a substituent, and a substituent An aryloxy group, an alkylamino group which may have a substituent, an arylamino group which may have a substituent, an alkylsulfonyl group which may have a substituent, and a substituent Among them, a hydrogen atom, a carboxyl group, an alkoxycarbonyl group, an alkyl group which may have a substituent, and an aryl group which may have a substituent are preferable.
  • R 9 to R 11 each independently represent a hydrogen atom or a monovalent substituent, and examples thereof include a hydrogen atom, a halogen atom, an amino group, a dialkylamino group, a carboxyl group, and an alkoxycarbonyl group.
  • a sulfo group, a nitro group, a cyano group, an alkyl group which may have a substituent, an aryl group which may have a substituent, an alkoxy group which may have a substituent, and a substituent An aryloxy group, an alkylamino group which may have a substituent, an arylamino group which may have a substituent, an alkylsulfonyl group which may have a substituent, and a substituent And arylsulfonyl groups and the like, and among them, a hydrogen atom, a carboxyl group, an alkoxycarbonyl group, an alkyl group which may have a substituent, and an aryl group which may have a substituent are preferable.
  • Z represents an oxygen atom, a sulfur atom, -N (R 12 )-or a phenylene group.
  • R 12 those mentioned in the general formula (1) can be mentioned.
  • a radically polymerizable group having a methacryloyl group represented by the general formula (1) is preferable.
  • the content thereof is iodine titration (1 g of the polymer compound (A) Measurement of the content of the radically polymerizable group) is preferably 0.1 to 10.0 mmol, more preferably 1.0 to 7.0 mmol, and most preferably 2.0 to 5.5 mmol. Within this range, good sensitivity and good storage stability can be obtained.
  • the polymer compound (A) typically has a repeating unit having a radically polymerizable group, and in that case, the content of the repeating unit having a radically polymerizable group is the same as that of the polymer compound (A)
  • the amount is preferably 1 to 70 mol%, more preferably 2 to 60 mol%, and still more preferably 5 to 50 mol%, based on all repeating units of
  • the radically polymerizable group includes (a) urethanization reaction using a hydroxy group of a polymer side chain and an isocyanate having a radical polymerization reactive group, (b) a hydroxy group of a polymer side chain and a radical polymerization reactive group Esterification reaction with carboxylic acid, carboxylic acid halide, sulfonic acid halide, or carboxylic acid anhydride, (c) Carboxy group of polymer side chain or salt thereof and isocyanate having radically polymerizable reactive group Reaction, (d) Esterification reaction using a halogenated carbonyl group of a polymer side chain, a carboxy group or a salt thereof, and an alcohol having a radical polymerization reactive group, (e) A halogenated carbonyl group of a polymer side chain, Carboxy Amidation reaction using a group or a salt thereof and an amine having a radical polymerization reactive group, (f) a polymer Amidation reaction using a chain
  • the polymer compound (A) preferably has a repeating unit having at least one of the groups represented by the general formulas (1) to (3) described above. Specifically as such a repeating unit, the repeating unit represented by the following general formula (4) is more preferable.
  • R 101 to R 103 each independently represent a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or a halogen atom.
  • T represents a radically polymerizable group represented by any of the above general formulas (1) to (3), and preferred embodiments are also the same as those described for the radically polymerizable group described above.
  • A is selected from the group consisting of a single bond, or -CO-, -O-, -NH-, a divalent aliphatic group, a divalent aromatic group and a combination thereof Represents a divalent linking group.
  • L 1 to L 18 of A consisting of combinations are listed below.
  • the left side is bonded to the main chain, and the right side is bonded to the radical polymerizable group represented by any one of the general formulas (1) to (3).
  • L 1 —CO—NH 2 divalent aliphatic group —O—CO—NH 2 divalent aliphatic group— L 2 : —CO—NH2 divalent aliphatic group— L 3 : -CO-divalent aliphatic group- L 4 : -CO-O-divalent aliphatic group- L 5 : -divalent aliphatic group- L 6 : —CO—NH 2 divalent aromatic group— L 7 : -CO-divalent aromatic group- L 8 : -divalent aromatic group- L 9 : —CO—O-divalent aliphatic group —CO—O-divalent aliphatic group— L 10 : —CO—O-divalent aliphatic group —O—CO-divalent aliphatic group— L 11 : -CO-O-divalent aromatic group -CO-O-divalent aliphatic group- L 12 : -CO-O-divalent aromatic group
  • the divalent aliphatic group means an alkylene group, a substituted alkylene group, an alkenylene group, a substituted alkenylene group, an alkynylene group, a substituted alkynylene group or a polyalkyleneoxy group.
  • an alkylene group, a substituted alkylene group, an alkenylene group and a substituted alkenylene group are preferable, and an alkylene group and a substituted alkylene group are more preferable.
  • a chain structure is more preferable than a cyclic structure, and a linear structure is more preferable than a chain structure having a branch.
  • the carbon atom number of the divalent aliphatic group is preferably 1 to 20, more preferably 1 to 15, still more preferably 1 to 12, and still more preferably 1 to 10.
  • the number is preferably 1 to 8, more preferably 1 to 8, and particularly preferably 1 to 4.
  • substituent of the divalent aliphatic group include a halogen atom (F, Cl, Br, I), a hydroxy group, a carboxy group, an amino group, a cyano group, an aryl group, an alkoxy group, an aryloxy group, an acyl group And alkoxycarbonyl group, aryloxycarbonyl group, acyloxy group, monoalkylamino group, dialkylamino group, arylamino group and diarylamino group.
  • divalent aromatic groups examples include phenylene, substituted phenylene, naphthalene and substituted naphthalene, with phenylene being preferred.
  • substituent of a bivalent aromatic group in addition to the example of the substituent of the said bivalent aliphatic group, an alkyl group is mentioned.
  • the mass average molecular weight (Mw) of the polymer compound (A) is preferably 2,500 or more, more preferably 2,500 to 1,000,000, and more preferably 5,000 to 1,000, in terms of polystyrene equivalent by GPC method. , 000 is more preferable.
  • the degree of dispersion (mass average molecular weight / number average molecular weight) of the polymer compound (A) is preferably 1.1 to 10.
  • GPC method uses HLC-8020GPC (made by Tosoh Corp.), TSKgel SuperHZM-H, TSKgel SuperHZ4000, TSKgel SuperHZ 2000 (made by Tosoh Corp., 4.6 mm ID ⁇ 15 cm) as columns, THF (tetrahydrofuran as the eluent) Based on the method using
  • the polymer compound (A) may be used in combination of two or more as needed.
  • the content of the polymer compound (A) is preferably 5 to 95% by mass, and more preferably 10 to 90% by mass, with respect to the total solid content of the temporary adhesive for producing a semiconductor device, from the viewpoint of good adhesive strength. 20 to 80% by mass is more preferable.
  • compositional ratio of the polymer structure represents a mole percentage.
  • the polymer compound (A') used for the temporary adhesive for producing a semiconductor device of the present invention is a polymer compound obtained by polymerizing styrenic monomer
  • the molecular compound is not particularly limited, but those described in the above-mentioned "polymer compound (A-2) formed by polymerizing a styrene-based monomer" can be suitably mentioned.
  • the preferred range of the content of repeating units derived from styrenic monomers with respect to all repeating units of polymer compound (A ′) is derived from styrenic monomers with respect to all repeating units of polymer compound (A) described above It is the same as the preferable range of the content of the repeating unit.
  • the polymer compound (A ′) is also preferably a polymer compound obtained by copolymerizing a styrenic monomer with another monomer, and specific examples and preferred examples of the other monomer are The same as described above in the “polymer compound (A-2) formed by polymerizing a styrenic monomer”, and “other unit amount relative to all repeating units of the polymer compound (A ′)”
  • the preferred range of the content of the repeating unit derived from the body is the same as the preferred range of the content of the repeating unit derived from other monomers with respect to all the repeating units of the polymer compound (A) described above .
  • the polymer compound (A ′) preferably has a radical polymerizable group, and the description of such radical polymerizable group etc. -2) is the same as described above.
  • the polymer compound (A ′) may be used in combination of two or more as needed.
  • the content of the polymer compound (A ′) is preferably 5 to 95% by mass, and more preferably 10 to 90% by mass, with respect to the total solid content of the temporary adhesive for producing a semiconductor device, from the viewpoint of good adhesive strength. Preferably, 20 to 80% by mass is more preferable.
  • the polymer compound (A ′ ′) used in the temporary adhesive for producing a semiconductor device of the present invention is not particularly limited as long as it is cellulose or a cellulose derivative, but the “cellulose or cellulose derivative described above Preferred are those described in (A-1).
  • the polymer compound (A ′ ′) preferably has a radically polymerizable group, and the description of such radically polymerizable group etc. -2) is the same as described above.
  • the polymer compound (A ′ ′) may be used in combination of two or more as needed.
  • the content of the polymer compound (A ′ ′) is preferably 5 to 95% by mass, and more preferably 10 to 90% by mass, with respect to the total solid content of the temporary adhesive for producing a semiconductor device, from the viewpoint of good adhesive strength. Preferably, 20 to 80% by mass is more preferable.
  • the temporary adhesive for producing a semiconductor device of the present invention contains a radically polymerizable monomer.
  • the radically polymerizable monomer typically has a radically polymerizable group.
  • a radically polymerizable group is a group which can be polymerized by the action of a radical.
  • the radically polymerizable monomer is a compound different from the above-described polymer compounds (A), (A ′) and (A ′ ′).
  • the polymerizable monomer is typically a low molecular compound and has a molecular weight It is preferably a low molecular weight compound of 2000 or less, more preferably a low molecular weight compound of 1500 or less, and still more preferably a low molecular weight compound with a molecular weight of 900 or less.
  • the adhesive support is adhered to the member to be treated and then heat treatment is carried out, for example, the polymerization reaction proceeds further due to radicals generated from the thermal radical polymerization initiator etc.
  • the treated member can be temporarily supported by the adhesive force.
  • the polymerizable monomer in the exposed area is subjected to pattern exposure to the adhesive layer in the adhesive support before the adhesive support is adhered to the treated member.
  • the polymerization reaction can be performed to provide the adhesive layer with a high adhesive area and a low adhesive area.
  • the adhesive layer of the adhesive support is irradiated with an actinic ray, radiation or heat to perform the polymerization reaction by the radical polymerizable monomer. Can form an adhesive layer with reduced adhesion from the inner surface to the outer surface on the substrate side. That is, the adhesion between the substrate and the adhesive layer in the adhesive support can be made high while the adhesion of the adhesive layer to the member to be treated can be lowered.
  • the radically polymerizable monomer is selected from compounds having at least one, preferably two or more radically polymerizable groups, and compounds having 2 to 6 radically polymerizable groups are more preferable.
  • Such compounds are widely known in the relevant industrial field, and they can be used in the present invention without particular limitation. These may be, for example, any of chemical forms such as monomers, prepolymers, that is, dimers, trimers and oligomers, or mixtures thereof and multimers thereof.
  • the radically polymerizable monomers in the present invention may be used singly or in combination of two or more.
  • the radically polymerizable group is preferably an ethylenically unsaturated group.
  • a styryl group, a (meth) acryloyl group and an allyl group are preferable, a (meth) acryloyl group is more preferable, and a (meth) acryloyloxy group is more preferable.
  • examples of monomers and prepolymers thereof include unsaturated carboxylic acids (eg, acrylic acid, methacrylic acid, itaconic acid, crotonic acid, isocrotonic acid, maleic acid etc.) and esters thereof, amides, etc. And multimers thereof, and preferably esters of unsaturated carboxylic acids and polyhydric alcohol compounds, and amides of unsaturated carboxylic acids and polyhydric amine compounds, and multimers thereof. Also, addition reaction products of unsaturated carboxylic acid esters or amides having a nucleophilic substituent such as hydroxyl group, amino group, mercapto group etc.
  • unsaturated carboxylic acids eg, acrylic acid, methacrylic acid, itaconic acid, crotonic acid, isocrotonic acid, maleic acid etc.
  • esters thereof eg. acrylic acid, methacrylic acid, itaconic acid, crotonic acid, isocrotonic acid, maleic acid etc.
  • unsaturated carboxylic acid instead of the above unsaturated carboxylic acid, it is also possible to use unsaturated phosphonic acid, a vinyl benzene derivative such as styrene, a vinyl ether, an allyl ether or the like, and a group of compounds replaced.
  • unsaturated phosphonic acid a vinyl benzene derivative such as styrene, a vinyl ether, an allyl ether or the like, and a group of compounds replaced.
  • ester monomer of polyhydric alcohol compound and unsaturated carboxylic acid examples include ethylene glycol diacrylate, triethylene glycol diacrylate, 1,3-butanediol diacrylate and tetramethylene glycol diacrylate as acrylic acid ester.
  • tetramethylene glycol dimethacrylate triethylene glycol dimethacrylate, neopentyl glycol dimethacrylate, trimethylolpropane trimethacrylate, trimethylolethane trimethacrylate, ethylene glycol dimethacrylate, 1,3-butanediol dimethacrylate, Hexanediol dimethacrylate, pentaerythritol dimethacrylate, pentaerythritol trimethacrylate, pentaerythritol tetramethacrylate, dipentaerythritol dimethacrylate, dipentaerythritol hexamethacrylate, sorbitol trimethacrylate, sorbitol tetramethacrylate, bis [p- (3-methacryloxy-) 2-hydroxy group Epoxy) phenyl] dimethyl methane, bis - [p- (
  • ethylene glycol diitaconate propylene glycol diitaconate, 1,3-butanediol diitaconate, 1,4-butanediol diitaconate, tetramethylene glycol diitaconate, pentaerythritol diitaconate And sorbitol tetraitaconate.
  • crotonic acid esters examples include ethylene glycol dicrotonate, tetramethylene glycol dicrotonate, pentaerythritol dicrotonate, and sorbitol tetradicrotonate.
  • isocrotonic acid esters examples include ethylene glycol diisocrotonate, pentaerythritol diisocrotonate, and sorbitol tetraisocrotonate.
  • maleic esters examples include ethylene glycol dimaleate, triethylene glycol dimaleate, pentaerythritol dimaleate, and sorbitol tetramaleate.
  • esters for example, aliphatic alcohol-based esters described in JP-B-46-27926, JP-B-51-47334, JP-A-57-196231, JP-A-59-5240, JP-A-59-5241.
  • Those having an aromatic skeleton described in JP-A-2-226149, those containing an amino group described in JP-A-1-165613, and the like are also suitably used.
  • A-DCP, DCP and A-DPH can be used as commercially available products.
  • monomers of amides of polyvalent amine compounds and unsaturated carboxylic acids include methylene bis-acrylamide, methylene bis-methacrylamide, 1,6-hexamethylene bis-acrylamide, 1,6-hexamethylene bis-methacryl Amide, diethylenetriamine trisacrylamide, xylylene bisacrylamide, xylylene bis methacrylamide and the like.
  • Examples of other preferred amide-based monomers include those having a cyclohexylene structure described in JP-B-54-21726.
  • urethane-based addition polymerizable compounds produced by using an addition reaction of an isocyanate and a hydroxyl group are also suitable, and as such a specific example, for example, one molecule described in JP-B-48-41708 is used.
  • CH 2 C (R 4 ) COOCH 2 CH (R 5 ) OH (A) (Wherein, R 4 and R 5 each represents H or CH 3.)
  • urethane acrylates as described in JP-A-51-37193, JP-B-2-32293 and JP-B-2-16765, JP-B-58-49860 and JP-B 56-
  • urethane compounds having an ethylene oxide-based skeleton as described in JP-A-17654, JP-B-62-39417, and JP-B-62-39418.
  • radical polymerizable monomer a compound having at least one addition polymerizable ethylene group and having an ethylenically unsaturated group having a boiling point of 100 ° C. or more under normal pressure is also preferable.
  • monofunctional acrylates and methacrylates such as polyethylene glycol mono (meth) acrylate, polypropylene glycol mono (meth) acrylate, phenoxyethyl (meth) acrylate, etc .; (Meth) acrylate, neopentyl glycol di (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol penta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, hexanediol (Meth) acrylate, trimethylolpropane tri
  • Polyfunctional (meth) acrylate obtained by reacting a compound having a cyclic ether group such as glycidyl (meth) acrylate and an ethylenically unsaturated group with a polyfunctional carboxylic acid can also be mentioned.
  • compounds having a fluorene ring and having two or more ethylenic polymerizable groups cardo described in JP-A-2010-160418, JP-A-2010-129825, Patent No. Resins can also be used.
  • radically polymerizable monomer examples include specific unsaturated compounds described in JP-B-46-43946, JP-B1-40337, and JP-B-1-40336, and JP-A-2-25493 described. Vinyl phosphonic acid compounds and the like can also be mentioned. In some cases, a structure containing a perfluoroalkyl group described in JP-A-61-22048 is preferably used. Furthermore, Journal of Japan Adhesive Association vol. 20, no. Also those introduced as photocurable monomers and oligomers on pages 7, 300-308 (1984) can be used.
  • radically polymerizable monomers represented by the following general formulas (MO-1) to (MO-5) can also be suitably used.
  • T is an oxyalkylene group
  • the terminal on the carbon atom side is bonded to R.
  • n is 0 to 14 and m is 1 to 8.
  • a plurality of R and T in one molecule may be identical to or different from each other.
  • the radical polymerizable monomer represented by the above general formulas (MO-1) to (MO-5) compounds described in paragraph No. 0248 to paragraph No. 0251 of JP-A-2007-269779 can be mentioned. Can also be suitably used in the present invention.
  • radical polymerizable monomers dipentaerythritol triacrylate (commercially available as KAYARAD D-330; Nippon Kayaku Co., Ltd.), dipentaerythritol tetraacrylate (commercially available as KAYARAD D-320; Nippon Kayaku Co., Ltd. Dipentaerythritol penta (meth) acrylate (made as KAYARAD D-310; Nippon Kayaku Co., Ltd.
  • dipentaerythritol hexa (meth) acrylate made as a commercial product, KAYARAD DPHA; made by Nippon Kayaku Co., Ltd .; Nippon Kayaku Co., Ltd.
  • KAYARAD DPHA made by Nippon Kayaku Co., Ltd .
  • Nippon Kayaku Co., Ltd. Nippon Kayaku Co., Ltd.
  • a structure in which these (meth) acryloyl groups are mediated by ethylene glycol and propylene glycol residues.
  • These oligomer types can also be used.
  • the radically polymerizable monomer is a polyfunctional monomer, and may have an acid group such as a carboxyl group, a sulfonic acid group or a phosphoric acid group. Therefore, if the ethylenic compound has an unreacted carboxyl group as in the case of a mixture as described above, this can be used as it is, but if necessary, the hydroxyl of the ethylenic compound described above A nonaromatic carboxylic acid anhydride may be reacted with the group to introduce an acid group.
  • non-aromatic carboxylic acid anhydrides include tetrahydrophthalic anhydride, alkylated tetrahydrophthalic anhydride, hexahydrophthalic anhydride, alkylated hexahydrophthalic anhydride, succinic anhydride, anhydride Maleic acid is mentioned.
  • the monomer having an acid value is an ester of an aliphatic polyhydroxy compound and an unsaturated carboxylic acid, and a nonaromatic carboxylic acid anhydride is reacted with an unreacted hydroxyl group of the aliphatic polyhydroxy compound.
  • Polyfunctional monomers having an acid group are preferred, and particularly preferred in this ester, the aliphatic polyhydroxy compound is pentaerythritol and / or dipentaerythritol.
  • Examples of commercially available products include M-510 and M-520 as polybasic acid-modified acrylic oligomers manufactured by Toagosei Co., Ltd.
  • One of these monomers may be used alone, or two or more of these monomers may be mixed and used because it is difficult to use a single compound in production.
  • a polyfunctional monomer having no acid group and a polyfunctional monomer having an acid group may be used in combination as monomers.
  • the acid value of the polyfunctional monomer having an acid group is preferably 0.1 to 40 mg-KOH / g, particularly preferably 5 to 30 mg-KOH / g.
  • the acid group as the entire polyfunctional monomer is adjusted to fall within the above range. Is required.
  • the polyfunctional monomer which has a caprolactone structure as a radically polymerizable monomer.
  • the polyfunctional monomer having a caprolactone structure is not particularly limited as long as it has a caprolactone structure in the molecule, and examples thereof include trimethylol ethane, ditrimethylol ethane, trimethylol propane, ditrimethylol propane and penta ⁇ -caprolactone modified polyfunctional ( ⁇ ) obtained by esterifying (meth) acrylic acid and ⁇ -caprolactone with a polyhydric alcohol such as erythritol, dipentaerythritol, tripentaerythritol, glycerin, diglycerol, trimethylolmelamine Mention may be made of meta) acrylates.
  • polyfunctional monomers having a caprolactone structure represented by the following formula (1) are preferable.
  • R 1 represents a hydrogen atom or a methyl group
  • m represents a number of 1 or 2
  • “*” represents a bond.
  • polyfunctional monomers having a caprolactone structure is commercially available, for example, from Nippon Kayaku Co., Ltd. as KAYARAD DPCA series, and
  • polyfunctional monomer it is also preferable that it is at least 1 sort (s) selected from the group of the compound represented by following General formula (i) or (ii).
  • E each independently represents-((CH 2 ) y CH 2 O)-or-((CH 2 ) y CH (CH 3 ) O)- And y each independently represent an integer of 0 to 10, and each X independently represents an acryloyl group, a methacryloyl group, a hydrogen atom or a carboxyl group.
  • the total of acryloyl group and methacryloyl group is three or four, m independently represents an integer of 0 to 10, and the sum of each m is an integer of 0 to 40. However, when the sum of each m is 0, any one of X is a carboxyl group.
  • the total of acryloyl group and methacryloyl group is 5 or 6
  • n independently represents an integer of 0 to 10
  • the sum of each n is an integer of 0 to 60.
  • any one of X is a carboxyl group.
  • m is preferably an integer of 0 to 6, and more preferably an integer of 0 to 4.
  • the total of m is preferably an integer of 2 to 40, more preferably an integer of 2 to 16, and particularly preferably an integer of 4 to 8.
  • n is preferably an integer of 0 to 6, and more preferably an integer of 0 to 4.
  • the total of each n is preferably an integer of 3 to 60, more preferably an integer of 3 to 24, and particularly preferably an integer of 6 to 12.
  • the oxygen atom side ends Preferred is a form in which
  • the compounds represented by the general formula (i) or (ii) may be used alone or in combination of two or more.
  • a form in which all six X's are an acryloyl group is preferable.
  • the compounds represented by the above general formula (i) or (ii) have a ring-opening skeleton by ring-opening addition reaction of ethylene oxide or propylene oxide to pentaerythritol or dipentaerythritol which is a conventionally known step. And the step of introducing a (meth) acryloyl group by, for example, reacting (meth) acryloyl chloride with the terminal hydroxyl group of the ring-opened skeleton. Each step is a well-known step, and those skilled in the art can easily synthesize a compound represented by general formula (i) or (ii).
  • pentaerythritol derivatives and / or dipentaerythritol derivatives are more preferable.
  • Specific examples thereof include compounds represented by the following formulas (a) to (f) (hereinafter also referred to as “exemplified compounds (a) to (f)”), and among them, exemplified compounds (a) and (f) b), (e) and (f) are preferred.
  • Examples of commercially available radically polymerizable monomers represented by the general formulas (i) and (ii) include SR-494 which is a tetrafunctional acrylate having four ethyleneoxy chains manufactured by Sartomer, manufactured by Nippon Kayaku Co., Ltd. DPCA-60, which is a hexafunctional acrylate having six pentylene oxy chains, and TPA-330, which is a trifunctional acrylate having three isobutylene oxy chains.
  • radical polymerizable monomers urethane acrylates as described in JP-B-48-41708, JP-A-51-37193, JP-B-2-32293 and JP-B-2-16765, and Urethane compounds having an ethylene oxide skeleton described in JP-B-58-49860, JP-B-56-17654, JP-B-62-39417 and JP-B-62-39418 are also suitable.
  • polymerizable compounds addition polymerizable compounds having an amino structure or a sulfide structure in the molecule described in JP-A-63-277653, JP-A-63-260909, and JP-A-1-105238 can be used. It can also be used.
  • a polyfunctional thiol compound having two or more mercapto (SH) groups in the same molecule is also suitable.
  • those represented by the following general formula (I) are preferable.
  • R 1 is an alkyl group
  • R 2 is an n-valent aliphatic group which may contain an atom other than carbon
  • R 0 is an alkyl group which is not H
  • n is 2 to 4
  • polyfunctional thiol compound represented by the above general formula (I) examples include 1,4-bis (3-mercaptobutyryloxy) butane [formula (II)] having the following structural formula 1,3,5-tris (3-mercaptobutyloxyethyl) -1,3,5-triadian-2,4,6 (1H, 3H5H) -trione [formula (III)], and pentaerythritol tetrakis (3) Mercaptobutyrate [formula (IV)] and the like.
  • These polyfunctional thiols can be used alone or in combination.
  • the compounding amount of the multifunctional thiol in the temporary adhesive it is added in the range of 0.3 to 8.9% by mass, more preferably 0.8 to 6.4% by mass with respect to the total solid excluding the solvent It is desirable to do.
  • the addition of the multifunctional thiol can improve the stability, odor, sensitivity, adhesion and the like of the temporary adhesive.
  • the details of the radical polymerizable monomer can be arbitrarily set in accordance with the final performance design of the temporary adhesive.
  • a structure having a high unsaturated group content per molecule is preferable, and in many cases, a bifunctional or more functional is preferable.
  • trifunctional or higher functional groups are preferable, and those having different functional numbers and different polymerizable groups (for example, acrylic acid ester, methacrylic acid ester, styrene compound, vinyl ether compound) By combining these methods, it is also effective to adjust both the sensitivity and the intensity. Furthermore, it is also preferable to use together radically polymerizable monomers having a functionality of three or more and having different ethylene oxide chain lengths.
  • the selection and use of the radically polymerizable monomer is also important for compatibility and dispersibility with other components (for example, polymer compound (A), polymerization initiator, etc.) contained in the temporary adhesive. For example, the compatibility may be improved by the use of a low purity compound or a combination of two or more.
  • a specific structure may be selected from the viewpoint of improving the adhesion to the carrier substrate.
  • the temporary adhesive for producing a semiconductor device of the present invention preferably contains (A ′ ′) cellulose or a cellulose derivative, and (B) a radically polymerizable monomer.
  • the content of the radically polymerizable monomer (B) is preferably 5 to 75% by mass, and more preferably 10 to 70% by mass, with respect to the total solid content of the temporary adhesive, from the viewpoint of good adhesive strength and peelability. Preferably, 10 to 60% by mass is more preferable.
  • the ratio (mass ratio) of the content of the radically polymerizable monomer (B) and the polymer compound (A) is preferably 90/10 to 10/90, and is 20/80 to 80/20. Is more preferred.
  • the temporary adhesive for producing a semiconductor device of the present invention may further contain a thermal radical polymerization initiator.
  • the thermal radical polymerization initiator is a compound which generates radicals by the energy of heat and which starts or accelerates a polymerization reaction of a polymer compound having a polymerizable group and a polymerizable monomer.
  • the polymerization reaction of the radically polymerizable monomer (B) further proceeds by the radicals generated from the thermal radical polymerization initiator, and the member to be treated can be temporarily supported with high adhesive strength.
  • the heat treatment after bonding the adhesive support to the treated member, or at the same time as performing temporary bonding, this promotes an anchor effect at the interface between the adhesive support and the treated member. It is presumed to be due.
  • the radically polymerizable monomer (B) is formed by heat.
  • the temporary adhesive for producing a semiconductor device of the present invention is, in one aspect, a polymer compound formed by polymerizing (A ′) a styrene monomer, (B) radically polymerizable monomer, and (C) thermal radical polymerization It is preferred to contain an initiator.
  • the thermal decomposition temperature (10-hour half-life temperature) is preferably 95 ° C. to 270 ° C., more preferably 130 ° C. to 250 ° C., 150 ° C. to 220 ° C.
  • thermal radical polymerization initiator aromatic ketones, onium salt compounds, organic peroxides, thio compounds, hexaarylbiimidazole compounds, ketoxime ester compounds, borate compounds, azinium compounds, metallocene compounds, active ester compounds, carbon
  • a thermal radical polymerization initiator aromatic ketones, onium salt compounds, organic peroxides, thio compounds, hexaarylbiimidazole compounds, ketoxime ester compounds, borate compounds, azinium compounds, metallocene compounds, active ester compounds, carbon
  • the optical radical polymerization initiator mentioned later is also mentioned.
  • nonionic radical polymerization initiators such as aromatic ketones, organic oxides, thio compounds, hexaarylbiimidazole compounds, ketoxime ester compounds, active ester compounds, compounds having a carbon halogen bond, azo compounds and the like
  • organic peroxides or azo compounds are more preferable, and organic peroxides are particularly preferable.
  • organic peroxides include benzoyl peroxide, lauryl peroxide, octanoyl peroxide, acetyl peroxide, di-tert-butyl peroxide, tert-butylcumyl peroxide, dicumyl peroxide, tert-butyl peroxide
  • organic peroxides include benzoyl peroxide, lauryl peroxide, octanoyl peroxide, acetyl peroxide, di-tert-butyl peroxide, tert-butylcumyl peroxide, dicumyl peroxide, tert-butyl peroxide
  • the thermal radical polymerization initiators used in the present invention may be used in combination of two or more as needed.
  • the content (total content in the case of two or more types) of the thermal radical polymerization initiator in the temporary adhesive for semiconductor device production of the present invention is heat-irradiated before temporary adhesion between the member to be treated and the adhesive support. From the viewpoint of reducing the adhesiveness of the adhesive layer in the case of performing the heat treatment, and improving the adhesiveness of the adhesive layer in the case of performing heat irradiation after temporary adhesion between the treated member and the adhesive support.
  • the content is preferably 0.01 to 50% by mass, more preferably 0.1 to 20% by mass, and most preferably 0.5 to 10% by mass with respect to the total solid content.
  • substantially no thermal radical polymerization initiator is blended.
  • the content of the thermal radical polymerization initiator can be 0.1% by mass or less with respect to the total solid content of the temporary adhesive.
  • the temporary adhesive for producing a semiconductor device of the present invention may further contain a photoradical polymerization initiator, that is, a compound which generates a radical upon irradiation with an actinic ray or radiation.
  • a photoradical polymerization initiator that is, a compound which generates a radical upon irradiation with an actinic ray or radiation.
  • the polymerization reaction in the exposed portion is performed by performing pattern exposure on the adhesive layer in the adhesive support before adhering the adhesive support to the treated member.
  • the adhesive layer can be provided with high adhesion areas and low adhesion areas.
  • produces a radical by irradiation of an actinic ray or a radiation
  • what is known as a polymerization initiator described below can be used, for example.
  • the photo radical polymerization initiator is not particularly limited as long as it has the ability to initiate the polymerization reaction (crosslinking reaction) in the reactive compound having the polymerizable group of the polymerizable monomer (B), and it is among known polymerization initiators. It can be selected appropriately. For example, those having photosensitivity to light rays visible from the ultraviolet region are preferable. In addition, it may be an activator which produces an active radical by causing an action with a photoexcited sensitizer.
  • the photo radical polymerization initiator preferably contains at least one compound having a molecular absorption coefficient of at least about 50 in the range of about 300 nm to 800 nm (preferably 330 nm to 500 nm).
  • photo radical polymerization initiator known compounds can be used without any limitation, and for example, halogenated hydrocarbon derivatives (for example, those having a triazine skeleton, those having an oxadiazole skeleton, those having a trihalomethyl group, etc.)
  • Acyl phosphine compounds such as acyl phosphine oxide, oxime compounds such as hexaaryl biimidazole and oxime derivatives, organic peroxides, thio compounds, ketone compounds, aromatic onium salts, ketooxime ether, aminoacetophenone compounds, hydroxyacetophenone, azo
  • the compounds include azide compounds, metallocene compounds, organic boron compounds, iron arene complexes and the like.
  • a nonionic photo radical initiator is preferable.
  • a halogenated hydrocarbon derivative for example, one having a triazine skeleton, one having an oxadiazole skeleton, one having a trihalomethyl group, etc.
  • Acyl phosphine compounds such as acyl phosphine oxides, oxime compounds such as hexaaryl biimidazole and oxime derivatives, organic peroxides, thio compounds, ketone compounds, ketoxime ethers, aminoacetophenone compounds, hydroxyacetophenones, azo compounds, etc.
  • oxime compounds such as hexaaryl biimidazole and oxime derivatives
  • organic peroxides thio compounds
  • ketone compounds ketoxime ethers
  • aminoacetophenone compounds hydroxyacetophenones, azo compounds, etc.
  • halogenated hydrocarbon compound having a triazine skeleton examples include, for example, Wakabayashi et al., Bull. Chem. Soc. Japan, 42, 2924 (1969), a compound described in British Patent 1388492, a compound described in JP-A-53-133428, a compound described in German Patent 3337024, an F. compound. C. Schaefer et al. Org. Chem. 29, 1527 (1964), compounds described in JP-A-62-58241, compounds described in JP-A-5-281728, compounds described in JP-A-5-34920, specification of U.S. Pat. No. 4,129,976 Compounds described in the book, and the like.
  • Examples of the compounds described in the aforementioned US Pat. No. 4,129,976 include compounds having an oxadiazole skeleton (eg, 2-trichloromethyl-5-phenyl-1,3,4-oxadiazole, 2- Trichloromethyl-5- (4-chlorophenyl) -1,3,4-oxadiazole, 2-trichloromethyl-5- (1-naphthyl) -1,3,4-oxadiazole, 2-trichloromethyl-5 -(2-naphthyl) -1,3,4-oxadiazole, 2-tribromomethyl-5-phenyl-1,3,4-oxadiazole, 2-tribromomethyl-5- (2-naphthyl) -1,3,4-oxadiazole; 2-trichloromethyl-5-styryl-1,3,4-oxadiazole, 2-trichloromethyl-5- (4-chlorostyryl) ) -1,3,4-oxadiazole,
  • acridine derivatives eg, 9-phenylacridine, 1,7-bis (9,9'-acridinyl) heptane, etc.
  • N-phenylglycine etc.
  • polyhalogen compounds eg, four) Carbon bromide, phenyl tribromomethyl sulfone, phenyl trichloromethyl ketone etc.
  • coumarins eg, 3- (2-benzofuranoyl) -7-diethylaminocoumarin, 3- (2-benzofuroyl) -7- (1-) Pyrrolidinyl) coumarin, 3-benzoyl-7-diethylaminocoumarin, 3- (2-methoxybenzoyl) -7-diethylaminocoumarin, 3- (4-dimethylaminobenzoyl) -7-diethylaminocoumarin, 3,3'-carbonylbis ( 5,7-di-n
  • ketone compound examples include benzophenone, 2-methylbenzophenone, 3-methylbenzophenone, 4-methylbenzophenone, 4-methoxybenzophenone, 2-chlorobenzophenone, 4-chlorobenzophenone, 4-bromobenzophenone, 2-carboxybenzophenone, 2-Ethoxycarbonylbenzophenone, benzophenonetetracarboxylic acid or its tetramethyl ester, 4,4'-bis (dialkylamino) benzophenones (eg, 4,4'-bis (dimethylamino) benzophenone, 4,4'-bisdicyclohexyl Amino) benzophenone, 4,4'-bis (diethylamino) benzophenone, 4,4'-bis (dihydroxyethylamino) benzophenone, 4-methoxy-4'-dimethylamino Nzofenone, 4,4'-dimethoxybenzophenone, 4-dimethylaminobenzophenone
  • a radical photopolymerization initiator a hydroxyacetophenone compound, an aminoacetophenone compound, and an acyl phosphine compound can also be used suitably. More specifically, for example, an aminoacetophenone initiator described in JP-A-10-291969 and an acylphosphine oxide initiator described in Japanese Patent No. 4225898 can also be used.
  • a hydroxyacetophenone type initiator IRGACURE-184, DAROCUR-1173, IRGACURE-500, IRGACURE-2959, IRGACURE-127 (trade name: all manufactured by BASF Corp.) can be used.
  • aminoacetophenone initiators commercially available products IRGACURE-907, IRGACURE-369, and IRGACURE-379 (trade names: all manufactured by BASF AG) can be used.
  • the aminoacetophenone initiator a compound described in JP-A-2009-191179 in which the absorption wavelength is matched to a long wave light source such as 365 nm or 405 nm can also be used.
  • group initiator IRGACURE-819 and DAROCUR-TPO (brand name: all are BASF Corporation make) which are commercial items can be used.
  • oxime type compound As a photo radical polymerization initiator, More preferably, an oxime type compound is mentioned.
  • an oxime type compound As specific examples of the oxime initiator, compounds described in JP-A-2001-233842, compounds described in JP-A-2000-80068, and compounds described in JP-A-2006-342166 can be used.
  • oxime ester compounds other than those described above, compounds described in JP-T-2009-519904, in which an oxime is linked to the carbazole N-position, and compounds described in US Pat. No. 7,626,957, in which a hetero substituent is introduced in the benzophenone moiety, Compounds described in JP-A-2010-15025 and U.S. Patent Publication 2009-292039 in which a nitro group is introduced at a dye site, ketooxime compounds described in WO2009-131189, the same triazine skeleton and oxime skeleton
  • the compound described in US Pat. No. 7,556,910 contained in the molecule, the compound described in JP 2009-221114 A having an absorption maximum at 405 nm and good sensitivity to a g-line light source may be used. .
  • the cyclic oxime compounds described in JP-A-2007-231000 and JP-A-2007-322744 can also be suitably used.
  • cyclic oxime compounds cyclic oxime compounds fused to a carbazole dye described in, for example, JP-A-2010-32985 and JP-A-2010-185072 have high light absorption and high sensitivity. preferable.
  • the compound described in JP-A-2009-242469, which has an unsaturated bond at a specific site of the oxime compound can also be used preferably because high sensitivity can be achieved by regenerating the active radical from the polymerization inactive radical. it can.
  • an oxime compound having a specific substituent described in JP-A-2007-269779 or an oxime compound having a thioaryl group shown in JP-A-2009-191061 can be mentioned.
  • trihalomethyl triazine compounds trihalomethyl triazine compounds, benzyl dimethyl ketal compounds, ⁇ -hydroxy ketone compounds, ⁇ -amino ketone compounds, acyl phosphine compounds, phosphine oxide compounds, metallocene compounds, oxime compounds, from the viewpoint of exposure sensitivity Selected from the group consisting of triallylimidazole dimer, onium compound, benzothiazole compound, benzophenone compound, acetophenone compound and its derivative, cyclopentadiene-benzene-iron complex and its salt, halomethyl oxadiazole compound, 3-aryl substituted coumarin compound Compounds are preferred.
  • at least one compound selected from the group consisting of a compound, an oxime compound, a triallylimidazole dimer and a benzophenone compound is used, and it is most preferred to use an oxime compound.
  • the radical photopolymerization initiators used in the present invention may be used in combination of two or more, if necessary.
  • the content (total content in the case of two or more types) of the radical photopolymerization initiator is preferably 0.1% by mass or more and 50% by mass or less with respect to the total solid content of the temporary adhesive, and more preferably 0 1% by mass or more and 30% by mass or less, more preferably 0.1% by mass or more and 20% by mass or less.
  • substantially no photo radical polymerization initiator is blended.
  • the content of the photo radical polymerization initiator can be 0.1 mass% or less with respect to the total solid content of the temporary adhesive.
  • the temporary adhesive of the present invention can further contain various compounds different from the components (A) to (D) according to the purpose, as long as the effects of the present invention are not impaired.
  • (E) Other Polymer Compounds in the temporary adhesive for producing a semiconductor device of the present invention another polymer compound is added to the polymer compound (A) in order to improve both the releasability and the adhesiveness in a well-balanced manner.
  • (E) may be added.
  • a polymer compound (meth) acrylic polymers, polyurethane resins, polyvinyl alcohol resins, polyvinyl acetal resins (preferably polyvinyl butyral resins), polyvinyl formal resins, polyester resins, epoxy resins, and novolac resins Etc. are used.
  • (meth) acrylic polymer means (meth) acrylic acid, (meth) acrylic acid ester (alkyl ester, aryl ester, allyl ester etc.), (meth) acrylamide and (meth) acrylamide derivative Etc. is referred to as a copolymer having a (meth) acrylic acid derivative such as
  • the "polyurethane resin” refers to a polymer produced by the condensation reaction of a compound having two or more isocyanate groups and a compound having two or more hydroxyl groups.
  • Polyvinyl butyral resin refers to a polymer synthesized by reacting polyvinyl alcohol and butyraldehyde obtained by saponifying a part or all of polyvinyl acetate with an acidic condition (acetalization reaction), and The polymer which introduce
  • Novolak resin refers to a polymer produced by the condensation reaction of phenols (such as phenol and cresol) and aldehydes (such as formaldehyde). Furthermore, the polymer which introduce
  • Preferred examples of the novolak resin include phenol formaldehyde resin, m-cresol formaldehyde resin, p-cresol formaldehyde resin, m- / p-mixed cresol formaldehyde resin, phenol / cresol (m-, p-, or m- / Novolak resins such as mixed formaldehyde resins may be mentioned.
  • Novolak resins having a weight average molecular weight of 500 to 20,000 and a number average molecular weight of 200 to 10,000 are preferred.
  • a compound in which a substituent is introduced by reacting a hydroxy group in a novolac resin with another compound can be preferably used.
  • the weight average molecular weight of the polymer compound (E) is preferably 5,000 or more, more preferably 10,000 to 300,000, and further, the number average molecular weight is preferably 1,000 or more, and more preferably 2,000 to 250,000.
  • the polydispersity (weight-average molecular weight / number-average molecular weight) is preferably 1.1 to 10.
  • the polymer compounds may be used alone or in combination of two or more.
  • the content of the polymer compound (E) is preferably 5 to 95% by mass, more preferably 10 to 90% by mass, with respect to the total solid content of the temporary adhesive, from the viewpoint of good adhesive strength. 80 mass% is more preferable.
  • the adhesive composition of the present invention may contain a sensitizing dye (F).
  • the sensitizing dye used in the present invention absorbs light at the time of exposure to be in an excited state, provides energy to the polymerization initiator by electron transfer, energy transfer or heat generation, etc. to improve the polymerization initiation function.
  • the sensitizing dye used in the present invention absorbs light at the time of exposure to be in an excited state, provides energy to the polymerization initiator by electron transfer, energy transfer or heat generation, etc. to improve the polymerization initiation function.
  • sensitizing dyes having maximum absorption in the wavelength range of 300 to 450 nm or 750 to 1400 nm are preferably used.
  • Examples of the sensitizing dye having the maximum absorption in the wavelength range of 300 to 450 nm include dyes such as merocyanines, benzopyrans, coumarins, aromatic ketones, anthracenes, styryls and oxazoles.
  • dyes having an absorption maximum in the wavelength range of 300 to 450 nm more preferable dyes from the viewpoint of high sensitivity are dyes represented by the following general formula (IX).
  • a 221 represents an aryl group or heteroaryl group which may have a substituent
  • R 221 , R 222 and R 223 each independently represent a monovalent nonmetallic atomic group, and A 221 and R 221 or R 222 and R 223 are each bonded to each other to be aliphatic or aromatic. It may form a sex ring.
  • the monovalent nonmetallic atomic group represented by R 221 , R 222 or R 223 is preferably a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkenyl group, a substituted or unsubstituted aryl group And a substituted or unsubstituted heteroaryl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted alkylthio group, a hydroxyl group or a halogen atom.
  • the optionally substituted aryl group and heteroaryl group represented by A 221 are the substituted or unsubstituted aryl groups and substituted or unsubstituted heteroaryl groups described for R 221 , R 222 and R 223 , respectively. Is the same as
  • the sensitizing dyes described in JP-A-2007-328243 can also be preferably used.
  • a sensitizing dye having a maximum absorption in the wavelength range of 750 to 1,400 nm (hereinafter sometimes referred to as an infrared absorber) will be described.
  • an infrared absorber dyes or pigments are preferably used.
  • dyes examples include commercially available dyes and known dyes described in documents such as "Dye Handbook” (edited by the Society of Synthetic Organic Chemistry, published in 1945). Specifically, dyes such as azo dyes, metal complex salt azo dyes, pyrazolone azo dyes, naphthoquinone dyes, anthraquinone dyes, phthalocyanine dyes, carbonium dyes, quinoneimine dyes, methine dyes, cyanine dyes, squarylium dyes, pyrylium salts, metal thiolate complexes, etc. Can be mentioned.
  • cyanine dyes particularly preferred are cyanine dyes, squarylium dyes, pyrylium salts, nickel thiolate complexes and indolenine cyanine dyes. Furthermore, cyanine dyes and indolenine cyanine dyes are preferable, and as a particularly preferable example, cyanine dyes represented by the following general formula (a) can be mentioned.
  • X 131 represents a hydrogen atom, a halogen atom, -N (Ph) 2 , -X 132 -L 131 or a group shown below.
  • Ph represents a phenyl group.
  • X 132 represents an oxygen atom, a nitrogen atom or a sulfur atom
  • L 131 represents a hydrocarbon group having 1 to 12 carbon atoms, and an aryl group having a hetero atom (N, S, O, a halogen atom, Se), It shows a hydrocarbon group having 1 to 12 carbon atoms containing a hetero atom.
  • X a - is Z a to be described later - which is synonymous with.
  • R 141 represents a hydrogen atom or a substituent selected from an alkyl group, an aryl group, a substituted or unsubstituted amino group, and a halogen atom.
  • R 131 and R 132 each represent a hydrocarbon group having 1 to 12 carbon atoms. From the viewpoint of storage stability of the temporary adhesive, R 131 and R 132 are preferably hydrocarbon groups having 2 or more carbon atoms. R 131 and R 132 may be connected to each other to form a ring, and when forming a ring, it is particularly preferable to form a 5- or 6-membered ring.
  • Ar 131 and Ar 132 may be the same or different and each represents an aryl group which may have a substituent.
  • a aryl group a benzene ring group and a naphthalene ring group can be mentioned.
  • a C12 or less hydrocarbon group, a halogen atom, and a C12 or less alkoxy group are mentioned.
  • Y 131 and Y 132 which may be the same or different, each represents a sulfur atom or a dialkylmethylene group having 12 or less carbon atoms.
  • R 133 and R 134 which may be the same or different, each represent a hydrocarbon group having 20 or less carbon atoms which may have a substituent.
  • R 135 , R 136 , R 137 and R 138 which may be the same or different, each represents a hydrogen atom or a hydrocarbon group having 12 or less carbon atoms. It is preferably a hydrogen atom in view of the availability of the raw material.
  • Z a - represents a counter anion. However, when the cyanine dye represented by the general formula (a) has an anionic substituent in its structure and charge neutralization is not necessary, Z a ⁇ is not necessary.
  • preferred Z a ⁇ are halide ion, perchlorate ion, tetrafluoroborate ion, hexafluorophosphate ion and sulfonate ion, and particularly preferred is perchlorate ion or hexachloride ion. Fluorophosphate ion and aryl sulfonate ion.
  • the infrared absorbing dyes may be used alone or in combination of two or more, and infrared absorbing agents other than infrared absorbing dyes such as pigments may be used in combination.
  • pigment compounds described in Paragraph Nos. [0072] to [0076] of JP-A-2008-195018 are preferable.
  • the content of the sensitizing dye (F) is preferably 0.05 to 30 parts by mass, more preferably 0.1 to 20 parts by mass, particularly preferably 0.1 to 20 parts by mass with respect to 100 parts by mass of the total solid content of the temporary adhesive. 2 to 10 parts by mass
  • the temporary adhesive for semiconductor device manufacture of this invention contains a chain transfer agent.
  • Chain transfer agents are defined, for example, in Polymer Dictionary Third Edition (edited by the Polymer Society of Japan, 2005), pp. 683-684.
  • As the chain transfer agent for example, a compound group having SH, PH, SiH, GeH in the molecule is used. These can donate hydrogen to a low active radical species to form a radical or be oxidized and then deprotonated to form a radical.
  • thiol compounds for example, 2-mercaptobenzimidazoles, 2-mercaptobenzthiazoles, 2-mercaptobenzoxazoles, 3-mercaptotriazoles, 5-mercaptotetrazole, etc.
  • the preferred content of the chain transfer agent is preferably 0.01 to 20 parts by mass, more preferably 1 to 10 parts by mass, particularly preferably 1 to 5 parts by mass, with respect to 100 parts by mass of the total solid content of the temporary adhesive. is there.
  • (H) Polymerization inhibitor To the temporary adhesive of the present invention, a small amount of a polymerization inhibitor is added to prevent unnecessary thermal polymerization of the radically polymerizable monomer (B) during production or storage of the temporary adhesive. It is preferable to do.
  • the polymerization inhibitor include hydroquinone, p-methoxyphenol, di-t-butyl-p-cresol, pyrogallol, t-butyl catechol, benzoquinone, 4,4'-thiobis (3-methyl-6-t-butylphenol And 2,2'-methylenebis (4-methyl-6-t-butylphenol), N-nitroso-N-phenylhydroxylamine aluminum salt are preferably mentioned.
  • the addition amount of the polymerization inhibitor is preferably about 0.01 to about 5% by mass with respect to the total solid content of the temporary adhesive.
  • the temporary adhesive of the present invention is added with higher fatty acid derivatives such as behenic acid and behenic acid amide, and the like, and the process of drying after application It may be unevenly distributed on the surface of the adhesive layer.
  • the addition amount of the higher fatty acid derivative is preferably about 0.1 to about 10% by mass with respect to the total solid content of the temporary adhesive.
  • the temporary adhesive of the present invention may contain various additives, for example, a curing agent, a curing catalyst, a silane coupling agent, and a filling as needed, as long as the effects of the present invention are not impaired.
  • An agent, an adhesion promoter, an antioxidant, an ultraviolet absorber, an aggregation inhibitor, etc. can be blended.
  • the total blending amount is preferably 3% by mass or less of the solid content of the temporary adhesive.
  • the temporary adhesive for producing a semiconductor device of the present invention can be applied by being dissolved in a solvent (usually, an organic solvent).
  • the solvent is basically not particularly limited as long as the solubility of each component and the coating property of the temporary adhesive are satisfied.
  • organic solvents examples include esters such as ethyl acetate, n-butyl acetate, isobutyl acetate, amyl formate, isoamyl acetate, isobutyl acetate, butyl propionate, isopropyl butyrate, ethyl butyrate, butyl butyrate, methyl lactate, ethyl lactate Alkyl oxyacetate (eg, methyl oxyacetate, ethyl oxyacetate, butyl oxyacetate (eg, methyl methoxyacetate, ethyl methoxyacetate, butyl methoxyacetate, methyl ethoxyacetate, ethyl ethoxyacetate etc.), alkyl 3-hydroxypropionate Esters (eg methyl 3-oxypropionate, ethyl 3-oxypropionate etc.
  • esters such as ethyl acetate, n-butyl acetate, is
  • Alkyl oxypropionates eg, methyl 2-oxypropionate, ethyl 2-oxypropionate, propyl 2-oxypropionate, etc.
  • ether for example, diethylene glycol dimethyl ether, tetrahydrofuran, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, methyl cellosolv
  • methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, ethyl cellosolve acetate, ethyl lactate, diethylene glycol dimethyl ether, butyl acetate, methyl 3-methoxypropionate, 2-heptanone, cyclohexanone, ethyl are particularly preferable in this case.
  • It is a mixed solution composed of two or more selected from carbitol acetate, butyl carbitol acetate, propylene glycol methyl ether, and propylene glycol methyl ether acetate.
  • the content of the solvent in the coating solution of the temporary adhesive is preferably such that the total solid concentration of the temporary adhesive is 5 to 80% by mass, and further 5 to 70% by mass Preferably, 10 to 60% by mass is particularly preferable.
  • (L) Surfactant To the temporary adhesive of the present invention, various surfactants may be added from the viewpoint of further improving the coatability.
  • various surfactants such as a fluorine-based surfactant, a nonionic surfactant, a cationic surfactant, an anionic surfactant, a silicone surfactant and the like can be used.
  • the temporary adhesive of the present invention further improves the liquid properties (in particular, the flowability) when it is prepared as a coating liquid by containing a fluorine-based surfactant, so that the uniformity of the coating thickness and the reduction of the coating thickness can be obtained.
  • Liquidity can be further improved. That is, in the case of film formation using a coating liquid to which a temporary adhesive containing a fluorine-based surfactant is applied, the interfacial tension between the surface to be coated and the coating liquid is reduced to wet the surface to be coated. The properties are improved, and the coatability on the surface to be coated is improved. For this reason, even in the case where a thin film of about several ⁇ m is formed with a small amount of liquid, it is effective in that film formation with a uniform thickness with small thickness unevenness can be more suitably performed.
  • the fluorine content in the fluorine-based surfactant is preferably 3% by mass to 40% by mass, more preferably 5% by mass to 30% by mass, and particularly preferably 7% by mass to 25% by mass.
  • the fluorine-based surfactant having a fluorine content in this range is effective in terms of the uniformity of the thickness of the coating film and the liquid saving property, and the solubility in the temporary adhesive is also good.
  • fluorine-based surfactants include Megafac F171, F172, F173, F176, F177, F141, F142, F143, F44, R30, F437, F475, F479, and the like.
  • Same F482, same F554, same F780, same F781 above, DIC Corporation
  • Florard FC430 same FC431, same FC171 (above, Sumitomo 3M Co., Ltd.)
  • Surfron S-382 same SC-101, The SC-103, SC-104, SC-105, SC1068, SC-381, SC-383, S393, KH-40 (all manufactured by Asahi Glass Co., Ltd.), PF636, PF656, PF6320 , PF6520, PF7002 (manufactured by OMNOVA), and the like.
  • nonionic surfactants include glycerol, trimethylolpropane, trimethylolethane and their ethoxylates and propoxylates (eg, glycerol propoxylate, glycerine ethoxylate, etc.), polyoxyethylene lauryl ether, polyoxyethylene Stearyl ether, polyoxyethylene oleyl ether, polyoxyethylene octyl phenyl ether, polyoxyethylene nonyl phenyl ether, polyethylene glycol dilaurate, polyethylene glycol distearate, sorbitan fatty acid ester (Pluronic L10, L31, L61, L62 manufactured by BASF, 10R5, 17R2, 25R2, Tetronics 304, 701, 704, 901, 904, 150R1, SO. Sparse 20000 (manufactured by Nippon Lubrizol Corporation), and the like.
  • cationic surfactants include phthalocyanine derivatives (trade name: EFKA-745, manufactured by Morishita Sangyo Co., Ltd.), organosiloxane polymer KP341 (manufactured by Shin-Etsu Chemical Co., Ltd.), (meth) acrylic acid Co) polymer poly flow No. 75, no. 90, no. 95 (manufactured by Kyoeisha Chemical Co., Ltd.), W001 (manufactured by Yusho Co., Ltd.), and the like.
  • phthalocyanine derivatives trade name: EFKA-745, manufactured by Morishita Sangyo Co., Ltd.
  • organosiloxane polymer KP341 manufactured by Shin-Etsu Chemical Co., Ltd.
  • (meth) acrylic acid Co) polymer poly flow No. 75, no. 90, no. 95 manufactured by Kyoeisha Chemical Co., Ltd.
  • W001 manufactured by Yusho Co., Ltd.
  • anionic surfactant examples include W004, W005, W017 (manufactured by Yusho Co., Ltd.), and the like.
  • silicone type surfactant for example, Toray Dow Corning Co., Ltd. product "Tore silicone DC3PA”, “Tore silicone SH7PA”, “Tore silicone DC11PA”, “Tore silicone SH21PA”, “Tore silicone SH28PA”, “Tore silicone SH21PA” Silicone SH29PA, Toray Silicone SH30PA, Toray Silicone SH8400, Momentive Performance Materials' TSF-4440, TSF-4300, TSF-4445, TSF-4460, TSF “4452”, “KP341”, “KF6001”, “KF6002” manufactured by Shin-Etsu Silicone Co., Ltd., “BYK307”, “BYK323”, “BYK330” manufactured by BIC Chemie, and the like.
  • the amount of surfactant added is preferably 0.001% by mass to 2.0% by mass, more preferably 0.005% by mass to 1.0% by mass, with respect to the total solid content of the temporary adhesive.
  • FIGS. 1A and 1B are schematic cross-sectional views illustrating temporary bonding between an adhesive support and a device wafer, and a schematic cross-sectional view showing a thinned state of a device wafer temporarily bonded by an adhesive support.
  • FIG. 1A and 1B are schematic cross-sectional views illustrating temporary bonding between an adhesive support and a device wafer, and a schematic cross-sectional view showing a thinned state of a device wafer temporarily bonded by an adhesive support.
  • an adhesive support 100 in which an adhesive layer 11 is provided on a carrier substrate 12 is prepared.
  • the material of the carrier substrate 12 is not particularly limited, for example, a silicon substrate, a glass substrate, a metal substrate and the like can be mentioned.
  • the silicon substrate typically used as a substrate of a semiconductor device is not easily contaminated
  • an electrostatic chuck generally used in the process can be used, a silicon substrate is preferable.
  • the thickness of the carrier substrate 12 is, for example, in the range of 300 ⁇ m to 5 mm, but is not particularly limited.
  • the adhesive layer 11 is a carrier substrate 12 using the temporary adhesive for producing a semiconductor device of the present invention, using a conventionally known spin coat method, spray method, roller coat method, flow coat method, doctor coat method, immersion method or the like. It can be formed by applying and then drying (baking).
  • a protective layer (not shown) similar to the protective layer in the protective layer-equipped device wafer 160 described in detail later may be provided, and in this case, for manufacturing the semiconductor device of the present invention.
  • the adhesive layer 11 can be formed by applying a temporary adhesive on the protective layer formed on the carrier substrate 12 using the above method or the like and then drying. Drying can be performed, for example, at 60 to 150 ° C. (preferably 80 to 200 ° C.) for 10 seconds to 10 minutes (preferably 1 to 2 minutes).
  • the thickness of the adhesive layer 11 is, for example, in the range of 1 to 500 ⁇ m, but is not particularly limited.
  • an adhesive support having the substrate and the adhesive layer obtained as described above (more preferably, an adhesive support having the substrate, the adhesive layer, and the protective layer), and a device wafer
  • the temporary adhesion to the workpiece, thinning of the device wafer, and detachment of the device wafer from the adhesive support will be described in detail.
  • the device wafer 60 (member to be processed) has a plurality of device chips 62 provided on the surface 61 a of the silicon substrate 61.
  • the thickness of the silicon substrate 61 is, for example, in the range of 200 to 1200 ⁇ m.
  • the surface 61 a of the silicon substrate 61 is pressed against the adhesive layer 11 of the adhesive support 100. Thereby, the surface 61a of the silicon substrate 61 and the adhesive layer 11 adhere to each other, and the adhesive support 100 and the device wafer 60 temporarily adhere to each other.
  • the bonded body of the adhesive support 100 and the device wafer 60 may be heated (irradiated with heat) to make the adhesiveness of the adhesive layer 11 stronger.
  • the heating temperature is preferably 50 ° C. to 300 ° C., more preferably 100 ° C. to 250 ° C., and still more preferably 150 ° C. to 220 ° C.
  • the heating time is preferably 20 seconds to 10 minutes, more preferably 30 seconds to 7 minutes, and still more preferably 40 seconds to 5 minutes.
  • the back surface 61 b of the silicon substrate 61 is subjected to mechanical or chemical treatment, specifically, thinning treatment such as grinding or chemical mechanical polishing (CMP).
  • the thickness of the silicon substrate 61 is reduced (for example, to a thickness of 1 to 200 ⁇ m) to obtain a thin device wafer 60 ′.
  • a through hole (not shown) is formed through the silicon substrate from the back surface 61b ′ of the thin device wafer 60 ′, and the silicon is penetrated in the through hole.
  • a process of forming an electrode (not shown) may be performed as needed.
  • the surface 61 a of the thin device wafer 60 ′ is detached from the adhesive layer 11 of the adhesive support 100.
  • the method of detachment is not particularly limited, but is it possible to contact the adhesive layer 11 with a peeling liquid and thereafter, if necessary, slide the thin device wafer 60 'against the adhesive support 100? Alternatively, it is preferable to perform by peeling the thin device wafer 60 'from the adhesive support 100. Since the temporary adhesive of the present invention has high affinity to the peeling liquid, temporary bonding between the adhesive layer 11 and the surface 61 a of the thin device wafer 60 ′ can be easily released by the above method.
  • the thin device wafer 60' After detaching the thin device wafer 60 'from the adhesive support 100, the thin device wafer 60' is subjected to various known processes as needed to manufacture a semiconductor device having the thin device wafer 60 '. Do.
  • the peeling solution water and the above-mentioned solvent (K) (organic solvent) can be used.
  • organic solvents such as acetone and p-menthane are also preferable.
  • the peeling solution may contain an alkali, an acid, and a surfactant.
  • the blending amount is preferably 0.1 to 5.0% by mass of the stripping solution.
  • a form in which two or more organic solvents are mixed, a mixture of water, an alkali, an acid and a surfactant, and at least one of an alkali, an acid and a surfactant is two or more The form is also preferred.
  • alkali for example, sodium phosphate tribasic, potassium phosphate tribasic, ammonium phosphate tribasic, sodium phosphate dibasic, potassium phosphate dibasic, ammonium phosphate dibasic, sodium carbonate, potassium carbonate, ammonium carbonate
  • Inorganic alkaline agents such as sodium hydrogen carbonate, potassium hydrogen carbonate, ammonium hydrogen carbonate, sodium borate, potassium borate, ammonium borate, sodium hydroxide, ammonium hydroxide, potassium hydroxide and lithium hydroxide, and monomethylamine Dimethylamine, trimethylamine, monoethylamine, diethylamine, triethylamine, monoisopropylamine, diisopropylamine, triisopropylamine, n-butylamine, monoethanolamine, diethanolamine, triethanolamine Emissions, monoisopropanolamine, diisopropanolamine, ethyleneimine, ethylenediamine, pyridine, may be used an organic alkal
  • inorganic acids such as hydrogen halide, sulfuric acid, nitric acid, phosphoric acid, boric acid, etc., methanesulfonic acid, ethanesulfonic acid, benzenesulfonic acid, p-toluenesulfonic acid, trifluoromethanesulfonic acid, acetic acid, citric acid
  • organic acids such as formic acid, gluconic acid, lactic acid, oxalic acid and tartaric acid can be used.
  • the surfactant anionic, cationic, nonionic or amphoteric surfactants can be used.
  • the content of the surfactant is preferably 1 to 20% by mass, and more preferably 1 to 10% by mass, with respect to the total amount of the alkaline aqueous solution.
  • the anionic surfactant is not particularly limited, and fatty acid salts, abietic acid salts, hydroxyalkane sulfonic acid salts, alkane sulfonic acid salts, dialkyl sulfosuccinates, linear alkyl benzene sulfonates, branched alkyl benzene sulfonates, Alkyl naphthalene sulfonates, alkyl diphenyl ether (di) sulfonates, alkyl phenoxy polyoxyethylene alkyl sulfonates, polyoxyethylene alkyl sulfophenyl ether salts, N-alkyl-N-oleyl taurine sodiums, N-alkyl sulfosuccinic acid Monoamide disodium salts, petroleum sulfonates, sulfated castor oil, sulfated beef tallow oil, sulfate salts of fatty acid alkyl esters,
  • the cationic surfactant is not particularly limited, but conventionally known ones can be used.
  • alkylamine salts, quaternary ammonium salts, alkylimidazolinium salts, polyoxyethylene alkylamine salts, polyethylene polyamine derivatives can be mentioned.
  • the nonionic surfactant is not particularly limited, but may be polyethylene glycol type higher alcohol ethylene oxide adduct, alkylphenol ethylene oxide adduct, alkyl naphthol ethylene oxide adduct, phenol ethylene oxide adduct, naphthol ethylene oxide adduct, fatty acid Ethylene oxide adducts, polyhydric alcohol fatty acid ester ethylene oxide adducts, higher alkylamine ethylene oxide adducts, fatty acid amide ethylene oxide adducts, ethylene oxide adducts of fats and oils, polypropylene glycol ethylene oxide adducts, dimethylsiloxane-ethylene oxide block Copolymer, dimethylsiloxane- (propylene oxide-ethylene oxide) block copolymer , Fatty acid esters of polyhydric alcohol type glycerol, fatty acid esters of pentaerythritol, fatty acid esters of sorbitol and
  • those having an aromatic ring and an ethylene oxide chain are preferable, and an alkyl-substituted or unsubstituted phenol ethylene oxide adduct or an alkyl-substituted or unsubstituted naphthol ethylene oxide adduct is more preferable.
  • the zwitterionic surfactant includes, but is not particularly limited to, amine oxides such as alkyldimethylamine oxide, betaines such as alkyl betaine, and amino acids such as sodium alkylamino fatty acid.
  • amine oxides such as alkyldimethylamine oxide
  • betaines such as alkyl betaine
  • amino acids such as sodium alkylamino fatty acid.
  • alkyldimethylamine oxide which may have a substituent alkyl carboxy betaine which may have a substituent
  • alkyl sulfo betaine which may have a substituent
  • additives such as an antifoaming agent and a water softener may be contained.
  • FIG. 2 is a schematic cross-sectional view for explaining the release of the temporary adhesion state between the conventional adhesive support and the device wafer.
  • an adhesive support comprising an adhesive layer 11 'formed of a conventional temporary adhesive on a carrier substrate 12 as an adhesive support.
  • the adhesion support 100 'and the device wafer are temporarily adhered to each other similarly to the procedure described with reference to FIGS. 1A and 1B using 100', and thinning treatment of the silicon substrate in the device wafer And then strip the thin device wafer 60 'from the adhesive support 100' in the same manner as described above.
  • the member to be treated is temporarily supported with high adhesive force even at high temperature (for example, 100 ° C.), and the problem of the adhesive generating gas is reduced even in temporary support at high temperature. Furthermore, it is difficult to easily release the temporary support to the treated member without damaging the treated member. For example, in order to make the temporary adhesion between the device wafer and the carrier substrate sufficiently high, if a conventional temporary adhesive having high adhesiveness is adopted, the temporary adhesion between the device wafer and the carrier substrate tends to be too strong. Become. Therefore, in order to release the excessively strong temporary adhesion, for example, as shown in FIG.
  • a tape (for example, dicing tape) 70 is attached to the back surface 61b ′ of the thin device wafer 60 ′ and
  • the device chip 62 is apt to be broken due to, for example, detachment of the bumps 63 from the device chip 62 provided with the bumps 63.
  • the conventional temporary adhesive having low adhesiveness is adopted, the temporary bonding between the device wafer and the carrier substrate is too weak, particularly at high temperatures, and the device wafer can not be reliably supported by the carrier substrate. Cheap.
  • the problem that an adhesive agent generates gas also tends to arise.
  • the adhesive layer formed by the temporary adhesive of the present invention exhibits sufficient adhesiveness, and the temporary adhesion between the device wafer 60 and the adhesive support 100 is particularly a peeling liquid on the adhesive layer 11. It can be easily released by bringing That is, according to the temporary adhesive of the present invention, the device wafer 60 can be temporarily supported by high adhesive force even at high temperature (for example, 100 ° C.), and the problem of the adhesive generating gas even in temporary support at high temperature is reduced. In addition, temporary support to the thin device wafer 60 'can be easily released without damaging the thin device wafer 60'.
  • FIGS. 3A, 3B, 3C, and 3D are schematic cross-sectional views for explaining temporary adhesion between an adhesive support and a device wafer with a protective layer, respectively, a device wafer with a protective layer temporarily adhered by an adhesive support.
  • 1 is a schematic sectional view showing a thinned state, a schematic sectional view showing a thin device wafer with a protective layer peeled from an adhesive support, and a schematic sectional view showing a thin device wafer.
  • FIGS. 4A and 4B are schematic cross-sectional views illustrating the thinned state of the device wafer temporarily bonded by the adhesive support, and the device wafer with protective layer temporarily bonded by the adhesive support. It is a schematic sectional drawing explaining the state which was made thin.
  • a device wafer with protective layer 160 (member to be processed) may be used instead of the device wafer 60.
  • the device wafer with protective layer 160 is provided on the silicon substrate 61 (substrate to be treated) on which the plurality of device chips 62 are provided on the surface 61 a and the surface 61 a of the silicon substrate 61 to protect the device chips 62.
  • a protective layer 80 a protective layer 80.
  • the thickness of the protective layer 80 is, for example, in the range of 1 to 1000 ⁇ m, preferably 1 to 100 ⁇ m, and more preferably 5 to 40 ⁇ m.
  • the protective layer 80 although a known one can be used without limitation, one that can reliably protect the device chip 62 is preferable.
  • a material which comprises the protective layer 80 if it is the purpose of protecting a to-be-processed base material, a well-known compound can be used without a restriction
  • hydrocarbon resin for example, acrylonitrile / butadiene / styrene copolymer (ABS resin), acrylonitrile / styrene copolymer (AS resin), methyl methacrylate / styrene copolymer (MS resin) ), Novolac resin, terpene resin, terpene phenol resin, modified terpene resin, hydrogenated terpene resin, hydrogenated terpene phenol resin, rosin ester, hydrogenated rosin, hydrogenated rosin ester, polymerized rosin, polymerized rosin ester, modified Rosin, rosin modified phenolic resin, alkylphenol resin, aliphatic petroleum resin, aromatic petroleum resin, hydrogenated petroleum resin, modified petroleum resin, alicyclic petroleum resin, coumarone petroleum resin, indene petroleum resin, olefin copolymer (eg, methylpentene) Copolymer),
  • ABS resin acrylonitrile / but
  • polytetrafluoroethylene (PTFE) resin tetrafluoroethylene / perfluoroalkoxyethylene copolymer (PFA resin), perfluoroethylene / propene copolymer (FEP resin), ethylene-tetrafluoroethylene (TFE) co-polymer Polymer, polyvinylidene fluoride (PVDF) resin, polychlorotrifluoroethylene (PCTFE) resin, ethylene-chlorotrifluoroethylene (CTFE) resin, TFE-perfluorodimethyldioxole copolymer resin, polyvinyl fluoride (PVF) Resin, polycarbonate resin, polyether sulfone resin, polyimide resin, polyester resin, polybenzimidazole resin, polyamide imide resin, polyether ketone resin are preferable, PFA resin, TFE-perfluorodimethyl geo Sole copolymer resin, PVF resin, polycarbonate resin, polyether sulfone resin, PVF resin
  • the binder may be used in combination of two or more as needed.
  • Durimide 10 Flujifilm, polyimide resin
  • Ultrason E 6020 BASF, polyether sulfone resin
  • MRS 0810 H Sato Light Industries, polybenzimidazole resin
  • cellulose acetate Aldrich, molecular weight 70,000
  • PCZ-300 Mitsubishi Gas Chemical Co., Ltd., polycarbonate resin
  • APEC 9379 BAYER Co., Ltd., polycarbonate resin
  • Clearon P-135 Yashara Chemical Co., Ltd.
  • Alcon P 140 Alcon P 140
  • TOPAS 5013 manufactured by Polyplastics Co., Ltd.
  • Zeonex 480R manufactured by Nippon Zeon Co., Ltd.
  • the protective layer 80 can contain the compound which may be contained in the said temporary adhesive agent as needed in the range which does
  • the surface 160 a (the surface of the protective layer 80 opposite to the silicon substrate 61) of the device wafer 160 with a protective layer is pressed against the adhesive layer 11 of the adhesive support 100. Thereby, the surface 160a of the device wafer 160 with a protective layer adheres to the adhesive layer 11, and the adhesive support 100 and the device wafer 160 with a protective layer temporarily adhere.
  • the thickness of the silicon substrate 61 is reduced (for example, a silicon substrate 61 'having a thickness of 1 to 200 ⁇ m is formed) to obtain a thin device wafer 160' with a protective layer.
  • the surface 160a of the thin device wafer with protective layer 160 ' is detached from the adhesive layer 11 of the adhesive support 100 to obtain a thin device wafer with protective layer 160' as shown in FIG. 3C. .
  • a thin device wafer is obtained. Any known method can be employed to remove the protective layer 80.
  • (1) a method of dissolving and removing the protective layer 80 with a solvent; (2) affixing a peeling tape or the like to the protective layer 80 A method of mechanically peeling the layer 80 from the silicon substrate 61 ′ and the device chip 62; (3) exposing the protective layer 80 with light such as ultraviolet light and infrared light or irradiating the laser with the protective layer 80; A method of decomposing or improving the releasability of the protective layer 80 may, for example, be mentioned.
  • the above (1) and (3) have the advantage that the removal of the protective layer 80 is easy because the actions in these methods are performed on the entire surface of the protective film.
  • the above (2) has the advantage that it can be carried out at room temperature without requiring a special device.
  • the configuration using the device wafer 160 with a protective layer instead of the device wafer 60 as a member to be processed is TTV (Total Thickness) of a thin device wafer obtained by thinning the device wafer 60 temporarily bonded by the adhesive support 100.
  • TTV Total Thickness
  • This is effective when it is desired to further reduce the variation) (ie, to improve the flatness of the thin device wafer). That is, when thinning the device wafer 60 temporarily bonded by the adhesive support 100, as shown in FIG. 4A, the uneven shape of the device wafer 60 formed by the plurality of device chips 62 is thin device wafer 60 '. TTV tends to be transferred to the back surface 61b 'of the H.sup.
  • the adhesive layer 11 can be made into an adhesive layer in which adhesiveness reduces by irradiation of a heat
  • the adhesive layer 11 is a layer having adhesiveness before being subjected to heat irradiation, but a layer in which the adhesiveness declines or disappears in a region subjected to the heat irradiation. It can be done.
  • the temporary adhesive of the present invention further contains a photo radical polymerization initiator (D), in particular, the adhesive layer 11 is an adhesive layer whose adhesiveness is reduced by irradiation with an actinic ray or radiation. be able to.
  • the adhesive layer is a layer having adhesiveness before being irradiated with an actinic ray or radiation, but in the area irradiated with the actinic ray or radiation, the adhesive property is It can be a layer that decreases or disappears.
  • the actinic radiation or radiation be actinic radiation having a wavelength of 350 to 450 nm.
  • the surface of the adhesive layer 100 of the adhesive support 100 to be bonded to the device wafer 60 is Radiation or heat may be applied.
  • the adhesive layer is converted to an adhesive layer having a low adhesive area and a high adhesive area formed by irradiation with an actinic ray or radiation or heat, and then temporary adhesion is performed with the adhesive support of the treated member.
  • FIG. 5A shows a schematic cross-sectional view illustrating exposure to an adhesive support
  • FIG. 5B shows a schematic top view of the mask.
  • the adhesive layer 11 of the adhesive support 100 is irradiated (that is, exposed) with an actinic ray or radiation 50 through the mask 40.
  • the mask 40 is composed of a light transmission region 41 provided in the central region and a light shielding region 42 provided in the peripheral region.
  • the exposure is a pattern exposure in which the central area of the adhesive layer 11 is exposed but not the peripheral area surrounding the central area.
  • FIG. 6A shows a schematic cross-sectional view of the pattern-exposed adhesive support
  • FIG. 6B shows a schematic top view of the pattern-exposed adhesive support.
  • the adhesive support 100 is obtained by performing the above-described pattern exposure as shown in FIG.
  • the adhesive support 110 is converted to the adhesive support 110 having the adhesive layer 21 in which the low adhesive area 21A and the high adhesive area 21B are formed in the central area and the peripheral area, respectively.
  • the "low adhesion area” in the present specification means an area having low adhesion as compared to the "high adhesion area", and an area without adhesion (ie, "non-adhesion" Encompass the sexual area ").
  • high adhesion area means an area having high adhesion as compared to "low adhesion area”.
  • the adhesive support 110 is provided with the low adhesive area 21A and the high adhesive area 21B by pattern exposure using the mask 40, and the areas of the light transmitting area and the light shielding area in the mask 40 and
  • the shape can be controlled in micron or nano order. Therefore, since the area, the shape, and the like of each of the high adhesion region 21B and the low adhesion region 21A formed in the adhesive layer 21 of the adhesive support 110 by pattern exposure can be finely controlled, it is possible as a whole of the adhesive layer.
  • the adhesive property can temporarily support the silicon substrate 61 of the device wafer 60 more reliably and easily, and release the temporary support of the thin device wafer 60 'to the silicon substrate more easily without damaging the thin device wafer 60'.
  • the degree of adhesion can be controlled with high precision and easily.
  • the high-adhesiveness region 21B and the low-adhesiveness region 21A in the adhesive support 110 are supposed to differ in their surface physical properties by pattern exposure, they are integrated as a structure. Therefore, there is no big difference in mechanical physical properties between the high adhesive area 21B and the low adhesive area 21A, and the surface 61a of the silicon substrate 61 of the device wafer 60 is adhered to the adhesive layer 21 of the adhesive support 110, Then, even if the back surface 61b of the silicon substrate 61 is subjected to a thinning process or a process for forming a silicon through electrode, the area of the back surface 61b corresponding to the high adhesion area 21B of the adhesive layer 21 and the low adhesion area 21A.
  • the adhesive layer 11 is converted to an adhesive layer having reduced adhesiveness from the inner surface to the outer surface of the adhesive layer by irradiation with an actinic ray or radiation or heat. Temporary bonding may be performed by the adhesive support of the member to be treated.
  • FIG. 7 is a schematic cross-sectional view illustrating irradiation of an adhesive support with actinic rays or radiation or heat.
  • the adhesive support 100 is irradiated with an actinic ray or radiation or heat 50 'toward the outer surface of the adhesive layer 11, as shown in FIG. 7, from the inner surface 31b to the outer surface 31a of the substrate side.
  • the adhesive layer 31 has the low adhesive region 31A on the outer surface 31a side and the high adhesive region 31B on the inner surface 31b side.
  • Such an adhesive layer 31 has an irradiation dose of actinic rays or radiation or heat 50, while the outer surface 31a is sufficiently irradiated with actinic rays or radiation or heat 50, but active to the inner surface 31b.
  • the adhesion on the outer surface 31a is the adhesion on the inner surface 31b. Since the adhesive layer 31 which is positively lowered than the sex is formed, it is not necessary to provide another layer such as a separation layer. As described above, the adhesive layer 31 is easy to form.
  • each of the adhesiveness on the outer surface 31a and the adhesiveness on the inner surface 31b can be controlled with high precision by the selection of the material constituting the adhesive layer 11 and the adjustment of the dose of actinic rays or radiation or heat. It is a thing.
  • the adhesiveness of the adhesive layer 31 to each of the substrate 12 and the silicon substrate 61 can be temporarily and securely supported on the silicon substrate 61 of the device wafer 60 without damaging the thin device wafer 60 ′.
  • the adhesiveness of the thin device wafer 60 'to the extent that the temporary support of the thin device wafer 60' can be easily released can be controlled with high precision and easily.
  • the silicon substrate 61 of the device wafer 60 when the silicon substrate 61 of the device wafer 60 is subjected to the above processing, the silicon substrate 61 can be temporarily supported more reliably and easily, and the thin device wafer 60 'is damaged. It is preferable as a form which can release temporary support to thin device wafer 60 'more easily, without giving.
  • the method of manufacturing a semiconductor device of the present invention is not limited to the above-described embodiment, and appropriate modifications, improvements, and the like can be made.
  • the pattern of the low adhesive area and the high adhesive area is not particularly limited, and, for example, As shown in the schematic top view, a high adhesion region 11B "as a halftone dot region and a low adhesion region 11A" as a peripheral region surrounding the halftone dot region are formed, and a high adhesion region 11B "and The low adhesive area 11A ′ ′ may be an adhesive layer 11 ′ ′ substantially equally spaced over the entire surface of the adhesive layer. Further, the form of the halftone dot pattern in the adhesive layer is not particularly limited, and, for example, as shown in the schematic top view of FIG.
  • the high adhesion area 21B ' may be an adhesive layer 21' having a dot pattern formed to form a radiation pattern extending outward from the center.
  • high adhesive area 22B , 23B, 24B are lower than the area ratio of the high adhesion region 21B '(see FIG. 9) in the adhesive layer 21', and the high adhesion regions 22B, 23B, 24B face outward from the center
  • the adhesive layers 22, 23, 24 may be formed so as to form an extending radiation pattern.
  • the size of the high adhesion region in the halftone dot pattern is not particularly limited, and as shown in the schematic cross sectional views of FIG. 13, FIG. 14, FIG. 15, FIG. Of the high adhesion regions 25B, 26B, 27B, 28B, 29B, 30B, and the low adhesion region 25A, 26A, 27A, 28A, 29A, 30A.
  • Adhesive layers 25, 26, 27, 28, 29, 30 may be modified from the high adhesive area 11 B ′ ′ (see FIG. 8) in the adhesive layer 11 ′ ′.
  • the adhesive layer formed of the temporary adhesive for producing a semiconductor device of the present invention constitutes an adhesive support by being provided on a carrier substrate before temporary bonding of a device wafer.
  • the substrate to be treated may first be provided on a member to be treated such as a device wafer, and then the substrate to be treated may be temporarily adhered.
  • the mask used for pattern exposure may be a binary mask, a halftone mask, or a gray tone mask.
  • the exposure is a mask exposure via a mask, it may be a selective exposure by drawing using an electron beam or the like.
  • the adhesive layer has a single layer structure, but the adhesive layer may have a multilayer structure.
  • a method of forming the adhesive layer having a multilayer structure prior to irradiation with an actinic ray or radiation, a method of stepwise applying the adhesive composition by the above-mentioned conventionally known method, or irradiation with an actinic ray or radiation Later, the method of applying an adhesive composition by the conventionally well-known method mentioned above etc. are mentioned.
  • the adhesive layer is a multilayer structure
  • the adhesive layer 11 is an adhesive layer whose adhesion is reduced by irradiation with actinic rays or radiation or heat
  • irradiation with actinic rays or radiation or heat irradiation with actinic rays or radiation or heat
  • the silicon substrate is mentioned as an object to be treated supported by the adhesive support
  • the present invention is not limited to this, and in the method of manufacturing a semiconductor device, mechanical or chemical It may be any treated member that can be subjected to various treatments.
  • the member to be treated may also include a compound semiconductor substrate, and specific examples of the compound semiconductor substrate include a SiC substrate, a SiGe substrate, a ZnS substrate, a ZnSe substrate, a GaAs substrate, an InP substrate, and a GaN substrate It can be mentioned.
  • the mechanical or chemical treatment on the silicon substrate supported by the adhesive support the thinning treatment of the silicon substrate and the formation treatment of the through silicon electrode are mentioned.
  • the present invention is not limited to these, and any processing required in the method of manufacturing a semiconductor device may be mentioned.
  • the light transmitting area and the light shielding area in the mask the high adhesive area and the low adhesive area in the adhesive layer, and the shape, size, number, arrangement place of the device chip in the device wafer, etc. Is optional and not limited as long as the invention can be achieved.
  • [(A) polymer compound] The high molecular compound described in the above structure, polystyrene (manufactured by Aldrich, Mw: 165,000), and the following high molecular compounds (A-1) to (A-8) Polymer compound (A-1): L-20 (cellulose acetate having an acetylation degree of 55%, Daicel Co., Ltd.) Polymer compound (A-2): L-50 (cellulose acetate having an acetylation degree of 55%, Daicel Co., Ltd.) Polymer Compound (A-3): L-70 (cellulose acetate having a degree of acetylation of 55%, Daicel Co., Ltd.) Polymer compound (A-4): LT-35 (cellulose acetate having an acetylation degree of 61%, Daicel Co., Ltd.) Polymer compound (A-5): LT-55 (cellulose acetate having an acetylation degree of 61%, Daicel Co., Ltd.) Polymer Compound (A
  • the thermal decomposition initiation temperature of the polymer compound (31) was measured in the same manner as the polymer compound (1).
  • the thermal decomposition onset temperature of the polymer compound (31) was 357 ° C.
  • polystyrene The thermal decomposition initiation temperature of polystyrene was measured in the same manner as for the polymer compound (1). The thermal decomposition onset temperature of polystyrene was 382 ° C.
  • the polymer compound (1), the polymer compound (31) and the polystyrene are also the same as the polymer compound (1) except
  • the thermal decomposition start temperature was measured by the method of 2. In all cases, the thermal decomposition start temperature was 250 ° C. or higher.
  • Nonionic photo radical polymerization initiator (1): IRGACURE OXE 02 (manufactured by BASF)
  • Polymer Compound for Comparative Example (1) Ethylene / Butyl Acrylate Copolymer (manufactured by Aldrich, 35% by mass of butyl acrylate)
  • Polymer compound for comparative example (2) Polymethyl methacrylate (manufactured by Kanto Kagaku, Mw 15,000)
  • thermo decomposition initiation temperature was measured by the same method as in Comparative Polymer Compound (2), and the thermal decomposition initiation temperature of Comparative Polymer Compound (1) was less than 250 ° C.
  • a 4-inch Si wafer was used as it was as a processed member having no protective layer.
  • a 20 mass% p-menthane solution of the following compound for a protective layer is coated on a 4-inch Si wafer by a spin coater (Opticoat MS-A100, Mikasa, 1200 rpm, 30 seconds), The wafer was baked at 100 ° C. for 300 seconds to form a wafer provided with a protective layer having a thickness of 20 ⁇ m.
  • the above-described wafer as the member to be processed is collectively referred to as a wafer 2.
  • Compound for protective layer Compound for protective layer (1): Clearon P-135 (Yashara Chemical Co., Ltd.) Compound for protective layer (2): Alcon P140 (manufactured by Arakawa Chemical Co., Ltd.) Compound (3) for protective layer: TOPAS 5013 (manufactured by Polyplastics Co., Ltd.) Protective layer compound (4): Zeonex 480R (manufactured by Nippon Zeon Co., Ltd.)
  • Wafer 2 was overlaid on the adhesive layer of wafer 1 and pressure bonded at 25 ° C. and 20 N / cm 2 for 30 seconds.
  • the wafer 2 is a 4 inch Si wafer provided with a protective layer, the protective layer and the adhesive layer of the wafer 1 were stacked and pressure-bonded as described above.
  • test pieces prepared under the conditions described in Table 2 were immersed in the stripping solution described in Table 2 at 25 ° C. for 10 minutes.
  • the test piece was taken out of the peeling solution, carefully washed with pure water, and dried at 25 ° C.
  • "A” if the test specimen can be pulled in the direction perpendicular to the adhesive layer and the Si wafer can be peeled off with very light force without breakage
  • "B” if the Si wafer can be peeled off with light force without breakage
  • peeling If it can not be made "C”. The presence or absence of breakage of the Si wafer was visually confirmed.
  • ⁇ Outgas> The dry substance of the liquid adhesive composition is subjected to heat treatment at 300 ° C. for 10 minutes in a nitrogen atmosphere, and then cooled once to 25 ° C., after which a temperature increase rate of 20 ° C./min according to TGA measurement. And the weight loss occurring up to 300 ° C. is less than 2%, “B”, and 2% or more, “C”. The results are shown in Table 2 below.
  • Comparative Examples 1 and 2 using the temporary adhesive not containing the polymer compound (A) and Comparative Example 3 using the temporary adhesive not containing the radically polymerizable monomer are adhesion at high temperature. Sex was insufficient.
  • Examples 1 to 55 using the temporary adhesive of the present invention not only give good results as to releasability, but also show excellent adhesiveness at high temperatures (100 ° C.) and also outgassing. It turned out that it can reduce.
  • the temporary adhesive of the present invention performs mechanical or chemical treatment on a member to be treated (such as a semiconductor wafer)
  • the member to be treated can be treated with high adhesion even at high temperatures (for example, 100 ° C.).
  • Polymer compound (A-6) The thermal decomposition initiation temperature of the polymer compound (A-6) was measured in the same manner as the polymer compound (A-3). The thermal decomposition initiation temperature of the polymer compound (A-6) was 321 ° C.
  • Polymer compound (A-8) The thermal decomposition initiation temperature of the polymer compound (A-8) was measured by the same method as the polymer compound (A-3). The thermal decomposition onset temperature of the polymer compound (A-8) was 329 ° C.
  • thermo decomposition start temperature was measured by the same method as (A-3), and in all cases, the thermal decomposition start temperature was 250 ° C. or higher.
  • Radical polymerizable monomer (B) Radical polymerizable monomer (B-1): NK ester A-BPE-4 (manufactured by Shin-Nakamura Chemical Co., Ltd.) Radical polymerizable monomer (B-2): divinylbenzene (manufactured by Wako Pure Chemical Industries, Ltd.) Radical polymerizable monomer (B-3): NK ester A-TMP-3EO (manufactured by Shin-Nakamura Chemical Co., Ltd.) Radical polymerizable monomer (B-4): NK ester AD-TMP (manufactured by Shin-Nakamura Chemical Co., Ltd.) Radical polymerizable monomer (B-5): NK ester A-DPH (manufactured by Shin-Nakamura Chemical Co., Ltd.) Radically polymerizable monomer (B-6): triallyl isocyanurate (manufactured by Tokyo Chemical Industry Co., Ltd.)
  • Photo radical polymerization initiator (D) Photoradical polymerization initiator (D-1): IRGACURE OXE 02 (manufactured by BASF)
  • Photo radical polymerization initiator (D-2) Kayacure DETX (manufactured by Nippon Kayaku Co., Ltd.)
  • a 4-inch Si wafer was used as it was as a processed member having no protective layer.
  • a 20% by mass p-menthane solution of the following compound for a protective layer is applied to a 4-inch Si wafer by a spin coater (Opticoat MS-A100 manufactured by Mikasa, 1200 rpm, 30 seconds), The wafer was baked at 100 ° C. for 300 seconds to form a wafer provided with a protective layer having a thickness of 20 ⁇ m.
  • the above-described wafer as the member to be processed is collectively referred to as a wafer 2 ′.
  • Compound for protective layer Compound for protective layer (1): Clearon P-135 (Yashara Chemical Co., Ltd.) Compound for protective layer (2): Alcon P140 (manufactured by Arakawa Chemical Co., Ltd.) Compound (3) for protective layer: TOPAS 5013 (manufactured by Polyplastics Co., Ltd.) Protective layer compound (4): Zeonex 480R (manufactured by Nippon Zeon Co., Ltd.)
  • adhesion test pieces were prepared through the respective steps of exposure, pressure bonding and bake in this order using each temporary adhesive.
  • the light transmitting area and the light shielding area form a dot pattern and a dot pattern using a UV exposure apparatus (LC8 made by Hamamatsu Photonics, 200 W high stability mercury xenon lamp L10852)
  • the adhesive layer was exposed at 2000 mJ / cm 2 for a halftone image through a photomask in which the halftone dot area in was a light shielding area.
  • the photomask used was a photomask in which a square light-shielding area with a side of 3 mm occupies 5% of the whole.
  • region) on the surface of an adhesive layer makes is a pattern according to FIG.
  • the wafer 1 ′ and the wafer 2 ′ were divided into sample pieces of 20 mm ⁇ 30 mm.
  • the adhesive layer of the sample piece of the wafer 1 ′ was stacked so as to contact the sample piece of the wafer 2 ′ in a square of 20 mm ⁇ 20 mm, and pressure bonded at 25 ° C. for 20 minutes at 20 N / cm 2 .
  • the wafer 2 ′ is a 4 inch Si wafer provided with a protective layer
  • the protective layer and the adhesive layer of the wafer 1 ′ are overlapped and pressure bonded as described above.
  • ⁇ Outgas> The dry substance of the liquid adhesive composition is subjected to heat treatment at 300 ° C. for 10 minutes in a nitrogen atmosphere, and then cooled once to 25 ° C., after which a temperature increase rate of 20 ° C./min according to TGA measurement. And the weight loss occurring up to 300 ° C. is less than 2%, “B”, and 2% or more, “C”. The results are shown in Table 4 below.
  • the temporary adhesive for producing a semiconductor device containing the (A) specific polymer compound and the (B) radically polymerizable monomer of the present invention not only can obtain good results with respect to releasability. In addition to excellent adhesion even at high temperatures, it was found that outgas can be reduced. Thus, the temporary adhesive of the present invention does not damage the treated member even after passing through a high temperature process when subjecting the member to be treated (such as a semiconductor wafer) to mechanical or chemical treatment. It is possible to easily release the temporary support to the processed member. Furthermore, in the adhesive layer formed through the exposure step, the area irradiated with light did not have any adhesiveness.
  • the member to be treated when subjecting a member to be treated mechanically or chemically, the member to be treated can be temporarily supported by high adhesion even at high temperatures (for example, 100 ° C.), and even in temporary support at high temperatures
  • the temporary adhesive for semiconductor device manufacture which can reduce the problem that an adhesive generates gas, and can release temporary support to a processed member without damaging the processed member, and adhesion using the same It is possible to provide an elastic support and a method of manufacturing a semiconductor device.
  • Adhesive layer 12 Carrier substrate 11A", 21A, 21A ', 22A, 23A, 24A, 25A, 26A, 27A, 28A, 30A, 31A Low adhesive area 11B ", 21B, 21B ', 22B, 23B, 24B, 25B, 26B, 27B, 28B, 29B, 30B, 31B high adhesive area 40 mask 41 light transmitting area 42 light shielding area 50 active light or radiation 50 'active light or radiation or heat 60 device wafer 60' thin device wafer 61, 61 'silicon substrate 62 device chip 63 bump 70 tape 80 protective layer 100, 100' , 110, 120 Adhesive support 160 Device wafer with protective layer 160 'Thin device wafer with protective layer

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WO2016107146A1 (zh) * 2014-12-31 2016-07-07 深圳先进技术研究院 一种用于薄晶圆加工的临时键合胶及其制备方法

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KR101678873B1 (ko) 2016-11-23
TWI588225B (zh) 2017-06-21
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