JP2009242771A - 感光性接着剤組成物、接着シート、接着剤パターン、接着剤層付半導体ウェハ、並びに半導体装置及びその製造方法 - Google Patents
感光性接着剤組成物、接着シート、接着剤パターン、接着剤層付半導体ウェハ、並びに半導体装置及びその製造方法 Download PDFInfo
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- JP2009242771A JP2009242771A JP2008251220A JP2008251220A JP2009242771A JP 2009242771 A JP2009242771 A JP 2009242771A JP 2008251220 A JP2008251220 A JP 2008251220A JP 2008251220 A JP2008251220 A JP 2008251220A JP 2009242771 A JP2009242771 A JP 2009242771A
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- adhesive
- adhesive composition
- photosensitive
- adhesive layer
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- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 5
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- BQTPKSBXMONSJI-UHFFFAOYSA-N 1-cyclohexylpyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C1CCCCC1 BQTPKSBXMONSJI-UHFFFAOYSA-N 0.000 description 3
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
Landscapes
- Die Bonding (AREA)
- Adhesive Tapes (AREA)
- Adhesives Or Adhesive Processes (AREA)
Abstract
【解決手段】(A)マレイミド基を有するマレイミドモノマー及び単官能ビニルモノマーをモノマー単位として含む共重合体であるアルカリ可溶性ポリマーと、(B)熱硬化性樹脂と、(C)放射線重合性化合物と、(D)光開始剤とを含有する半導体素子用感光性接着剤組成物。
【選択図】なし
Description
R1及びR2はベンゼン環に結合する置換基を示し、それぞれ独立に、水素、炭素数1〜7の直鎖状アルキル基、炭素数1〜7の分岐したアルキル基、炭素数1〜7のアルコキシ基、フェニル基、水酸基、カルボキシル基、フッ素、シアノ基、イソシアネート基、ニトロ基、メルカプト基、炭素数1〜5のアルキルチオ基、トリフルオロメチル基、炭素数1〜7のエステル基、フェノキシ基、又は炭素数1〜7のアルキルカルボニル基を示す。式(1)の化合物のR1及びR2のうち一方は水酸基又はカルボキシル基であることが好ましい。式(1)の化合物の例としては、2−メチル−N−フェニルマレイミドがある。
下記のポリマー(A〜G)をそれぞれ用い、下記表1の配合表に示す通り、フィルム塗工ワニスを調合した。
攪拌機、温度計、冷却管、及び窒素置換装置を備えた500mlのセパラブルフラスコ内で、マレイミドモノマーとしてN−(4−ヒドロキシフェニル)マレイミド(分子量189)18.9g、及び、単官能ビニルモノマーとしてn−ブチルアクリレート(分子量128)25.6gを、ジメチルホルムアミド(以下「DMF」と略す)178gに均一に溶解させた。フラスコ内の溶液に2,2’−アゾビスイソブチロニトリル(分子量164、以下「AIBN」と略す)0.74gを室温(25℃)で少量ずつ添加した。添加終了後、該フラスコに還流冷却器を取り付け、窒素ガスを吹き込みながら室温(25℃)で30分攪拌した。次に、該フラスコを70℃に昇温させて6時間攪拌を続け、こうして得られた溶液を室温(25℃)まで冷却した後、蒸留水中に投じて再沈殿させた。得られた沈殿物を真空乾燥機で乾燥しポリマー(以下「ポリマーA」という。)を得た。得られたポリマーの重量平均分子量を測定したところ、ポリスチレン換算でMw=27000であった。また、得られたポリマーのTgは74℃であった。
攪拌機、温度計、冷却管、及び窒素置換装置を備えた500mlのセパラブルフラスコ内で、マレイミドモノマーとして4−マレイミド安息香酸(分子量217)13.0g、N−フェニルマレイミド(分子量173)6.9g、及び、単官能ビニルモノマーとしてn−ブチルアクリレート32.0gを、DMF204gに均一に溶解させた。フラスコ内の溶液にAIBN0.86gを室温(25℃)で少量ずつ添加した。添加終了後、該フラスコに還流冷却器を取り付け、窒素ガスを吹き込みながら室温(25℃)で30分攪拌した。次に、該フラスコを70℃に昇温させて6時間攪拌を続け、こうして得られた溶液を室温(25℃)まで冷却した後、蒸留水中に投じて再沈殿させた。得られた沈殿物を真空乾燥機で乾燥しポリマー(以下「ポリマーB」という。)を得た。得られたポリマーの重量平均分子量を測定したところ、ポリスチレン換算でMw=33000であった。また、得られたポリマーのTgは60℃であった。
攪拌機、温度計、冷却管、及び窒素置換装置を備えた500mlのセパラブルフラスコ内で、マレイミドモノマーとしてN−シクロヘキシルマレイミド(分子量179)17.9g、単官能ビニルモノマーとしてn−ブチルアクリレート25.6g及びアクリル酸(分子量72)3.6gを、DMF188gに均一に溶解させた。フラスコ内の溶液にAIBN0.86gを室温(25℃)で少量ずつ添加した。添加終了後、該フラスコに還流冷却器を取り付け、窒素ガスを吹き込みながら室温(25℃)で30分攪拌した。次に、該フラスコを70℃に昇温させて6時間攪拌を続け、こうして得られた溶液を室温(25℃)まで冷却した後、蒸留水中に投じて再沈殿させた。得られた沈殿物を真空乾燥機で乾燥しポリマー(以下「ポリマーC」という。)を得た。得られたポリマーの重量平均分子量を測定したところ、ポリスチレン換算で、Mw=35000であった。また、得られたポリマーのTgは44℃であった。
攪拌機、温度計、冷却管、及び窒素置換装置を備えた500mlのセパラブルフラスコ内で、マレイミドモノマーとしてN−シクロヘキシルマレイミド18.8g、単官能ビニルモノマーとしてn−ブチルアクリレート19.2g及びアクリル酸5.4gをDMF174gに均一に溶解させた。フラスコ内の溶液にAIBN0.81gを室温(25℃)で少量ずつ添加した。添加終了後、該フラスコに還流冷却器を取り付け、窒素ガスを吹き込みながら室温(25℃)で30分攪拌した。次に、該フラスコを70℃に昇温させて6時間攪拌を続け、こうして得られた溶液を室温(25℃)まで冷却した後、蒸留水中に投じて再沈殿させた。得られた沈殿物を真空乾燥機で乾燥しポリマー(以下「ポリマーD」という。)を得た。得られたポリマーの重量平均分子量を測定したところ、ポリスチレン換算で、Mw=29000であった。また、得られたポリマーのTgは68℃であった。
攪拌機、温度計、冷却管、及び窒素置換装置を備えた500mlのセパラブルフラスコ内で、単官能ビニルモノマーとしてn−ブチルアクリレート19.2g、アクリル酸5.4g及びスチレン(分子量104)23.4gをDMF192gに均一に溶解させた。フラスコ内の溶液にAIBN1.11gを室温(25℃)で少量ずつ添加した。添加終了後、該フラスコに還流冷却器を取り付け、窒素ガスを吹き込みながら室温(25℃)で30分攪拌した。次に、該フラスコを70℃に昇温させて6時間攪拌を続け、こうして得られた溶液を室温(25℃)まで冷却した後、蒸留水中に投じて再沈殿させた。得られた沈殿物を真空乾燥機で乾燥しポリマー(以下「ポリマーE」という。)を得た。得られたポリマーの重量平均分子量を測定したところ、ポリスチレン換算で、Mw=42000であった。また、得られたポリマーのTgは52℃であった。
攪拌機、温度計、冷却管、及び窒素置換装置を備えた500mlのセパラブルフラスコ内で、単官能ビニルモノマーとしてn−ブチルアクリレート12.8g、アクリル酸5.8g、スチレン20.8g及びシクロヘキシルアクリレート(分子量154)15.4gをDMF234gに均一に溶解させた。フラスコ内の溶液にAIBN1.18gを室温(25℃)で少量ずつ添加した。添加終了後、該フラスコに還流冷却器を取り付け、窒素ガスを吹き込みながら室温(25℃)で30分攪拌した。次に、該フラスコを70℃に昇温させて6時間攪拌を続け、こうして得られた溶液を室温(25℃)まで冷却した後、蒸留水中に投じて再沈殿させた。得られた沈殿物を真空乾燥機で乾燥しポリマー(以下「ポリマーF」という。)を得た。得られたポリマーの重量平均分子量を測定したところ、ポリスチレン換算で、Mw=37000であった。また、得られたポリマーのTgは55℃であった。
攪拌機、温度計、冷却管、及び窒素置換装置を備えた500mlのセパラブルフラスコ内で、単官能ビニルモノマーとしてn−ブチルアクリレート12.8g、アクリル酸21.6g及びシクロヘキシルアクリレート15.4gをDMF215gに均一に溶解させた。フラスコ内の溶液にAIBN1.24gを室温(25℃)で少量ずつ添加した。添加終了後、該フラスコに還流冷却器を取り付け、窒素ガスを吹き込みながら室温(25℃)で30分攪拌した。次に、該フラスコを70℃に昇温させて6時間攪拌を続け、こうして得られた溶液を室温(25℃)まで冷却した後、蒸留水中に投じて再沈殿させた。得られた沈殿物を真空乾燥機で乾燥しポリマー(以下「ポリマーG」という。)を得た。得られたポリマーの重量平均分子量を測定したところ、ポリスチレン換算で、Mw=39000であった。また、得られたポリマーのTgは66℃であった。
BPE−100:新中村化学、エトキシ化ビスフェノールAジメタクリレート
U−2PPA:新中村化学、ウレタンアクリレート
I−819:チバ・スペシャルティ・ケミカルズ、ビス(2,4,6−トリメチルベンゾイル)−フェニルホスフィンオキサイド
VG3101:プリンテック、3官能エポキシ樹脂
BEO−60E:新日本理化、ビスフェノールAビス(トリエチレングリコールグリシジルエーテル)エーテル
TrisP−PA:本州化学、トリスフェノール化合物(α,α,α’−トリス(4−ヒドロキシフェノル)−1−エチル−4−イソプロピルベンゼン)
R972:日本アエロジル、疎水性フュームドシリカ(平均粒径:約16nm)
NMP:関東化学、N−メチル−2−ピロリジノン
支持台上に載せたシリコンウェハ(6inch径、厚さ400μm)に、実施例1〜4及び比較例1〜3の基材フィルム付きの接着シートをロール(温度100℃、線圧4kgf/cm、送り速度0.5m/分)で加圧することにより積層した。続いて基材フィルムを剥がし、接着剤層上に、厚み80μm、幅10mm、長さ40mmのポリイミドフィルム「ユーピレックス」(商品名)を上記と同様の条件でロールにより加圧して積層した。このようにして準備したサンプルについて、レオメータ「ストログラフE−S」(商品名)を用いて、室温(25℃)で90°ピール試験を行って、接着フィルム−ユーピレックス間のピール強度を測定した。ピール強度が2N/cm以上のサンプルを「A」、2N/cm未満のサンプルを「C」とした。
実施例1〜4及び比較例1〜3の基材フィルム付きの接着シートを、シリコンウェハ(6インチ径、厚さ400μm)上に100℃でロールで加圧(線圧4kgf/cm、送り速度0.5m/分)することにより積層した。その上にネガ型パターン用マスク(日立化成製:No.G−2)を載せ、そして、高精度平行露光機(オーク製作所製:EXM−1172−B−∞)で500mJ/cm2で露光した後、80℃のホットプレート上で約30秒放置した。その後、基材フィルムを取り除き、コンベア現像機(ヤコー製)でスプレー現像した。現像液としてはテトラメチルアンモニウムハイドライド(TMAH)2.38質量%、28℃を用い、スプレー圧は0.18MPaであった。水洗には純水、23℃を用い、スプレー圧は0.02MPaであった。現像後、パターン形成(ライン/スペース:200μm/400μm)されているか確認し、パターン形成されていた場合を「A」、パターンは開口されているものの露光部も膨潤又は溶解した場合を「B」、現像とともに接着剤層がシリコンウェハからはく離した場合を「C」とした。
シリコンウェハ(6インチ径、厚さ400μm)を、5mm×5mmの大きさで深さ180μmまでハーフカットした。その後、実施例1〜4及び比較例1〜3の基材フィルム付きの接着シートを、ハーフカット処理したシリコンウェハ上に100℃でロールで加圧(線圧4kgf/cm、送り速度0.5m/分)することにより積層した。続いて、これらのサンプルを高精度平行露光機(オーク製作所製:EXM−1172−B−∞)で500mJ/cm2で露光した後、80℃のホットプレート上で約30秒放置した。その後、基材フィルムを除去し、各サンプルを5mm×5mmに個片化した。
Claims (12)
- (A)マレイミド基を有するマレイミドモノマーに由来するモノマー単位及び単官能ビニルモノマーに由来するモノマー単位を含む共重合体であるアルカリ可溶性ポリマーと、
(B)熱硬化性樹脂と、
(C)放射線重合性化合物と、
(D)光開始剤と、
を含有する半導体素子用感光性接着剤組成物。 - 前記アルカリ可溶性ポリマーが、カルボキシル基及び/又はフェノール性水酸基を有する共重合体である、請求項1記載の感光性接着剤組成物。
- 前記マレイミドモノマーが、カルボキシル基及び/又はフェノール性水酸基を有する化合物を含む、請求項1記載の感光性接着剤組成物。
- 前記熱硬化性樹脂がエポキシ樹脂である、請求項1〜3のいずれか一項に記載の感光性接着剤組成物。
- 前記放射線重合性化合物がアクリレート基及び/又はメタクリレート基を有する、請求項1〜4のいずれか一項に記載の感光性接着剤組成物。
- 前記アルカリ可溶性ポリマーのガラス転移温度が150℃以下である、請求項1〜5のいずれか一項に記載の感光性接着剤組成物。
- 請求項1〜6のいずれか一項に記載の感光性接着剤組成物からなるフィルム状の接着剤層を備える接着シート。
- 基材を更に備え、該基材の一方面上に前記接着剤層が設けられている、請求項7記載の接着シート。
- 請求項1〜6のいずれか一項に記載の感光性接着剤組成物からなるフィルム状の接着剤層を露光し、露光後の前記接着剤層をアルカリ現像液を用いて現像することにより形成される、接着剤パターン。
- 半導体ウェハと、該半導体ウェハの一方面上に設けられた請求項1〜6のいずれか一項に記載の感光性接着剤組成物からなる接着剤層と、を備える、接着剤層付半導体ウェハ。
- 支持部材と、該支持部材に搭載された半導体素子と、前記支持部材と前記半導体素子との間に介在する接着剤層と、を備え、前記接着剤層が請求項1〜6のいずれか一項に記載の感光性接着剤組成物によって形成されている、半導体装置。
- 請求項1〜6のいずれか一項に記載の感光性接着剤組成物からなる接着剤層を露光し、露光後の前記接着剤層をアルカリ現像液を用いて現像することにより接着剤パターンを形成する工程と、
前記接着剤パターンを介して半導体素子とこれが搭載される支持部材とを接着する工程と、
を備える半導体装置の製造方法。
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JP2015189883A (ja) * | 2014-03-28 | 2015-11-02 | 富士フイルム株式会社 | 感光性樹脂組成物、積層体、半導体デバイスの製造方法、半導体デバイス |
JP2020100806A (ja) * | 2018-12-20 | 2020-07-02 | 三菱ケミカル株式会社 | 粘接着剤組成物、及びそれを用いてなる粘接着剤、粘接着剤シート、ならびに積層体 |
JP7415414B2 (ja) | 2018-12-20 | 2024-01-17 | 三菱ケミカル株式会社 | 粘接着剤組成物、及びそれを用いてなる粘接着剤、粘接着剤シート、ならびに積層体 |
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