JP2015189883A - 感光性樹脂組成物、積層体、半導体デバイスの製造方法、半導体デバイス - Google Patents
感光性樹脂組成物、積層体、半導体デバイスの製造方法、半導体デバイス Download PDFInfo
- Publication number
- JP2015189883A JP2015189883A JP2014069007A JP2014069007A JP2015189883A JP 2015189883 A JP2015189883 A JP 2015189883A JP 2014069007 A JP2014069007 A JP 2014069007A JP 2014069007 A JP2014069007 A JP 2014069007A JP 2015189883 A JP2015189883 A JP 2015189883A
- Authority
- JP
- Japan
- Prior art keywords
- resin composition
- photosensitive resin
- group
- meth
- ether
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011342 resin composition Substances 0.000 title claims abstract description 173
- 239000004065 semiconductor Substances 0.000 title claims abstract description 163
- 238000000034 method Methods 0.000 title claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- -1 vinyl compound Chemical class 0.000 claims abstract description 147
- 229920000642 polymer Polymers 0.000 claims abstract description 57
- PEEHTFAAVSWFBL-UHFFFAOYSA-N Maleimide Chemical compound O=C1NC(=O)C=C1 PEEHTFAAVSWFBL-UHFFFAOYSA-N 0.000 claims abstract description 45
- 239000003431 cross linking reagent Substances 0.000 claims abstract description 43
- 239000002253 acid Substances 0.000 claims abstract description 40
- 239000003999 initiator Substances 0.000 claims abstract description 36
- 229920002554 vinyl polymer Polymers 0.000 claims abstract description 15
- 150000001875 compounds Chemical class 0.000 claims description 121
- 239000003505 polymerization initiator Substances 0.000 claims description 25
- 238000012719 thermal polymerization Methods 0.000 claims description 24
- 239000000945 filler Substances 0.000 claims description 20
- 239000002904 solvent Substances 0.000 claims description 19
- 125000003545 alkoxy group Chemical group 0.000 claims description 15
- 238000001035 drying Methods 0.000 claims description 14
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 14
- 125000000217 alkyl group Chemical group 0.000 claims description 13
- 230000002378 acidificating effect Effects 0.000 claims description 11
- 239000003795 chemical substances by application Substances 0.000 claims description 11
- 239000007788 liquid Substances 0.000 claims description 11
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 10
- 125000003118 aryl group Chemical group 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 239000013585 weight reducing agent Substances 0.000 claims description 7
- 238000010030 laminating Methods 0.000 claims description 6
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 111
- 239000000126 substance Substances 0.000 description 63
- 239000010410 layer Substances 0.000 description 53
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 48
- 239000010408 film Substances 0.000 description 48
- 235000012431 wafers Nutrition 0.000 description 47
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 45
- 230000015572 biosynthetic process Effects 0.000 description 38
- 238000003786 synthesis reaction Methods 0.000 description 38
- 239000000853 adhesive Substances 0.000 description 35
- 230000001070 adhesive effect Effects 0.000 description 35
- 150000003254 radicals Chemical class 0.000 description 33
- 239000007787 solid Substances 0.000 description 31
- 239000012790 adhesive layer Substances 0.000 description 24
- 239000003963 antioxidant agent Substances 0.000 description 23
- 239000011347 resin Substances 0.000 description 23
- 229920005989 resin Polymers 0.000 description 23
- 239000004793 Polystyrene Substances 0.000 description 22
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 22
- 229920002223 polystyrene Polymers 0.000 description 22
- 238000005227 gel permeation chromatography Methods 0.000 description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 21
- FNYWFRSQRHGKJT-UHFFFAOYSA-N 3-ethyl-3-[(3-ethyloxetan-3-yl)methoxymethyl]oxetane Chemical compound C1OCC1(CC)COCC1(CC)COC1 FNYWFRSQRHGKJT-UHFFFAOYSA-N 0.000 description 20
- 238000005481 NMR spectroscopy Methods 0.000 description 20
- 238000010992 reflux Methods 0.000 description 19
- 239000000243 solution Substances 0.000 description 19
- ALYNCZNDIQEVRV-UHFFFAOYSA-N 4-aminobenzoic acid Chemical compound NC1=CC=C(C(O)=O)C=C1 ALYNCZNDIQEVRV-UHFFFAOYSA-N 0.000 description 18
- 230000003078 antioxidant effect Effects 0.000 description 18
- 238000001914 filtration Methods 0.000 description 18
- 239000000203 mixture Substances 0.000 description 18
- 238000003756 stirring Methods 0.000 description 18
- 238000010438 heat treatment Methods 0.000 description 17
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 16
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 15
- HIXDQWDOVZUNNA-UHFFFAOYSA-N 2-(3,4-dimethoxyphenyl)-5-hydroxy-7-methoxychromen-4-one Chemical compound C=1C(OC)=CC(O)=C(C(C=2)=O)C=1OC=2C1=CC=C(OC)C(OC)=C1 HIXDQWDOVZUNNA-UHFFFAOYSA-N 0.000 description 14
- 229960000834 vinyl ether Drugs 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 125000004432 carbon atom Chemical group C* 0.000 description 13
- 239000002245 particle Substances 0.000 description 13
- 229920001296 polysiloxane Polymers 0.000 description 13
- 230000008569 process Effects 0.000 description 13
- 239000004593 Epoxy Substances 0.000 description 12
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 12
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical compound C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 12
- 239000000049 pigment Substances 0.000 description 12
- 239000004094 surface-active agent Substances 0.000 description 12
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 11
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 11
- 238000006116 polymerization reaction Methods 0.000 description 11
- 239000002966 varnish Substances 0.000 description 11
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 10
- 239000000178 monomer Substances 0.000 description 10
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 9
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 9
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 9
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 9
- 239000006087 Silane Coupling Agent Substances 0.000 description 9
- 229960004050 aminobenzoic acid Drugs 0.000 description 9
- 239000000047 product Substances 0.000 description 9
- 230000005855 radiation Effects 0.000 description 9
- 125000001424 substituent group Chemical group 0.000 description 9
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 8
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 8
- 239000002202 Polyethylene glycol Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 229920001223 polyethylene glycol Polymers 0.000 description 8
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 7
- 239000005977 Ethylene Substances 0.000 description 7
- VSVVZZQIUJXYQA-UHFFFAOYSA-N [3-(3-dodecylsulfanylpropanoyloxy)-2,2-bis(3-dodecylsulfanylpropanoyloxymethyl)propyl] 3-dodecylsulfanylpropanoate Chemical compound CCCCCCCCCCCCSCCC(=O)OCC(COC(=O)CCSCCCCCCCCCCCC)(COC(=O)CCSCCCCCCCCCCCC)COC(=O)CCSCCCCCCCCCCCC VSVVZZQIUJXYQA-UHFFFAOYSA-N 0.000 description 7
- BGYHLZZASRKEJE-UHFFFAOYSA-N [3-[3-(3,5-ditert-butyl-4-hydroxyphenyl)propanoyloxy]-2,2-bis[3-(3,5-ditert-butyl-4-hydroxyphenyl)propanoyloxymethyl]propyl] 3-(3,5-ditert-butyl-4-hydroxyphenyl)propanoate Chemical compound CC(C)(C)C1=C(O)C(C(C)(C)C)=CC(CCC(=O)OCC(COC(=O)CCC=2C=C(C(O)=C(C=2)C(C)(C)C)C(C)(C)C)(COC(=O)CCC=2C=C(C(O)=C(C=2)C(C)(C)C)C(C)(C)C)COC(=O)CCC=2C=C(C(O)=C(C=2)C(C)(C)C)C(C)(C)C)=C1 BGYHLZZASRKEJE-UHFFFAOYSA-N 0.000 description 7
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 7
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical class C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 7
- 229930195733 hydrocarbon Natural products 0.000 description 7
- 150000002430 hydrocarbons Chemical class 0.000 description 7
- 125000005647 linker group Chemical group 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 6
- 0 C*(C(*(*)C(*1*)=O)=O)C1=O Chemical compound C*(C(*(*)C(*1*)=O)=O)C1=O 0.000 description 6
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 6
- 238000011161 development Methods 0.000 description 6
- 125000000524 functional group Chemical group 0.000 description 6
- 125000005843 halogen group Chemical group 0.000 description 6
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 6
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 6
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 6
- 238000007789 sealing Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 5
- HEQOJEGTZCTHCF-UHFFFAOYSA-N 2-amino-1-phenylethanone Chemical class NCC(=O)C1=CC=CC=C1 HEQOJEGTZCTHCF-UHFFFAOYSA-N 0.000 description 5
- VSAWBBYYMBQKIK-UHFFFAOYSA-N 4-[[3,5-bis[(3,5-ditert-butyl-4-hydroxyphenyl)methyl]-2,4,6-trimethylphenyl]methyl]-2,6-ditert-butylphenol Chemical compound CC1=C(CC=2C=C(C(O)=C(C=2)C(C)(C)C)C(C)(C)C)C(C)=C(CC=2C=C(C(O)=C(C=2)C(C)(C)C)C(C)(C)C)C(C)=C1CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 VSAWBBYYMBQKIK-UHFFFAOYSA-N 0.000 description 5
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 5
- 239000003513 alkali Substances 0.000 description 5
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical compound C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 5
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 229920001577 copolymer Polymers 0.000 description 5
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 5
- 229910052753 mercury Inorganic materials 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 239000002516 radical scavenger Substances 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- WMYINDVYGQKYMI-UHFFFAOYSA-N 2-[2,2-bis(hydroxymethyl)butoxymethyl]-2-ethylpropane-1,3-diol Chemical compound CCC(CO)(CO)COCC(CC)(CO)CO WMYINDVYGQKYMI-UHFFFAOYSA-N 0.000 description 4
- XLLIQLLCWZCATF-UHFFFAOYSA-N 2-methoxyethyl acetate Chemical compound COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 4
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 4
- OZJPLYNZGCXSJM-UHFFFAOYSA-N 5-valerolactone Chemical compound O=C1CCCCO1 OZJPLYNZGCXSJM-UHFFFAOYSA-N 0.000 description 4
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 description 4
- FBPFZTCFMRRESA-JGWLITMVSA-N D-glucitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-JGWLITMVSA-N 0.000 description 4
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 4
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 4
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 4
- 208000034189 Sclerosis Diseases 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 150000001346 alkyl aryl ethers Chemical class 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 150000001412 amines Chemical class 0.000 description 4
- 125000000732 arylene group Chemical group 0.000 description 4
- 239000012965 benzophenone Substances 0.000 description 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 4
- 125000001309 chloro group Chemical group Cl* 0.000 description 4
- NNBZCPXTIHJBJL-UHFFFAOYSA-N decalin Chemical compound C1CCCC2CCCCC21 NNBZCPXTIHJBJL-UHFFFAOYSA-N 0.000 description 4
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 4
- 125000003700 epoxy group Chemical group 0.000 description 4
- FJKIXWOMBXYWOQ-UHFFFAOYSA-N ethenoxyethane Chemical compound CCOC=C FJKIXWOMBXYWOQ-UHFFFAOYSA-N 0.000 description 4
- 229940052303 ethers for general anesthesia Drugs 0.000 description 4
- 230000002349 favourable effect Effects 0.000 description 4
- WOLATMHLPFJRGC-UHFFFAOYSA-N furan-2,5-dione;styrene Chemical compound O=C1OC(=O)C=C1.C=CC1=CC=CC=C1 WOLATMHLPFJRGC-UHFFFAOYSA-N 0.000 description 4
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 4
- 125000005641 methacryl group Chemical group 0.000 description 4
- 229910052618 mica group Inorganic materials 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 150000001451 organic peroxides Chemical class 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 125000003566 oxetanyl group Chemical group 0.000 description 4
- 150000002923 oximes Chemical class 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000003566 sealing material Substances 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 229910052604 silicate mineral Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 239000000600 sorbitol Substances 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 125000005504 styryl group Chemical group 0.000 description 4
- 150000003459 sulfonic acid esters Chemical class 0.000 description 4
- 229910052717 sulfur Inorganic materials 0.000 description 4
- 239000011593 sulfur Substances 0.000 description 4
- 230000004580 weight loss Effects 0.000 description 4
- 239000008096 xylene Substances 0.000 description 4
- 239000004711 α-olefin Substances 0.000 description 4
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical group C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 3
- CZAVRNDQSIORTH-UHFFFAOYSA-N 1-ethenoxy-2,2-bis(ethenoxymethyl)butane Chemical compound C=COCC(CC)(COC=C)COC=C CZAVRNDQSIORTH-UHFFFAOYSA-N 0.000 description 3
- UAJRSHJHFRVGMG-UHFFFAOYSA-N 1-ethenyl-4-methoxybenzene Chemical compound COC1=CC=C(C=C)C=C1 UAJRSHJHFRVGMG-UHFFFAOYSA-N 0.000 description 3
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 3
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 3
- JLBJTVDPSNHSKJ-UHFFFAOYSA-N 4-Methylstyrene Chemical compound CC1=CC=C(C=C)C=C1 JLBJTVDPSNHSKJ-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- LCFVJGUPQDGYKZ-UHFFFAOYSA-N Bisphenol A diglycidyl ether Chemical compound C=1C=C(OCC2OC2)C=CC=1C(C)(C)C(C=C1)=CC=C1OCC1CO1 LCFVJGUPQDGYKZ-UHFFFAOYSA-N 0.000 description 3
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 3
- UJOBWOGCFQCDNV-UHFFFAOYSA-N Carbazole Natural products C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 235000000126 Styrax benzoin Nutrition 0.000 description 3
- 244000028419 Styrax benzoin Species 0.000 description 3
- 235000008411 Sumatra benzointree Nutrition 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 150000007513 acids Chemical class 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 150000001298 alcohols Chemical class 0.000 description 3
- 125000002947 alkylene group Chemical group 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 150000001408 amides Chemical class 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 229960002130 benzoin Drugs 0.000 description 3
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 3
- 150000008366 benzophenones Chemical class 0.000 description 3
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 3
- 230000001588 bifunctional effect Effects 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 3
- XUCHXOAWJMEFLF-UHFFFAOYSA-N bisphenol F diglycidyl ether Chemical compound C1OC1COC(C=C1)=CC=C1CC(C=C1)=CC=C1OCC1CO1 XUCHXOAWJMEFLF-UHFFFAOYSA-N 0.000 description 3
- 238000007664 blowing Methods 0.000 description 3
- BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical compound CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 description 3
- 150000001735 carboxylic acids Chemical class 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 229920006037 cross link polymer Polymers 0.000 description 3
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 239000012153 distilled water Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000002148 esters Chemical class 0.000 description 3
- 150000002170 ethers Chemical class 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 235000011187 glycerol Nutrition 0.000 description 3
- 235000019382 gum benzoic Nutrition 0.000 description 3
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000010445 mica Substances 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 3
- BKIMMITUMNQMOS-UHFFFAOYSA-N nonane Chemical compound CCCCCCCCC BKIMMITUMNQMOS-UHFFFAOYSA-N 0.000 description 3
- 239000009719 polyimide resin Substances 0.000 description 3
- 229920001451 polypropylene glycol Polymers 0.000 description 3
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 3
- 229910000029 sodium carbonate Inorganic materials 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- QXJQHYBHAIHNGG-UHFFFAOYSA-N trimethylolethane Chemical compound OCC(C)(CO)CO QXJQHYBHAIHNGG-UHFFFAOYSA-N 0.000 description 3
- DTGKSKDOIYIVQL-WEDXCCLWSA-N (+)-borneol Chemical group C1C[C@@]2(C)[C@@H](O)C[C@@H]1C2(C)C DTGKSKDOIYIVQL-WEDXCCLWSA-N 0.000 description 2
- QNODIIQQMGDSEF-UHFFFAOYSA-N (1-hydroxycyclohexyl)-phenylmethanone Chemical compound C=1C=CC=CC=1C(=O)C1(O)CCCCC1 QNODIIQQMGDSEF-UHFFFAOYSA-N 0.000 description 2
- XDWRKTULOHXYGN-UHFFFAOYSA-N 1,3-bis(ethenoxy)-2,2-bis(ethenoxymethyl)propane Chemical compound C=COCC(COC=C)(COC=C)COC=C XDWRKTULOHXYGN-UHFFFAOYSA-N 0.000 description 2
- AFFLGGQVNFXPEV-UHFFFAOYSA-N 1-decene Chemical compound CCCCCCCCC=C AFFLGGQVNFXPEV-UHFFFAOYSA-N 0.000 description 2
- CRSBERNSMYQZNG-UHFFFAOYSA-N 1-dodecene Chemical compound CCCCCCCCCCC=C CRSBERNSMYQZNG-UHFFFAOYSA-N 0.000 description 2
- UZKWTJUDCOPSNM-UHFFFAOYSA-N 1-ethenoxybutane Chemical compound CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 2
- XHUZSRRCICJJCN-UHFFFAOYSA-N 1-ethenyl-3-ethylbenzene Chemical compound CCC1=CC=CC(C=C)=C1 XHUZSRRCICJJCN-UHFFFAOYSA-N 0.000 description 2
- JZHGRUMIRATHIU-UHFFFAOYSA-N 1-ethenyl-3-methylbenzene Chemical compound CC1=CC=CC(C=C)=C1 JZHGRUMIRATHIU-UHFFFAOYSA-N 0.000 description 2
- WHFHDVDXYKOSKI-UHFFFAOYSA-N 1-ethenyl-4-ethylbenzene Chemical compound CCC1=CC=C(C=C)C=C1 WHFHDVDXYKOSKI-UHFFFAOYSA-N 0.000 description 2
- LIKMAJRDDDTEIG-UHFFFAOYSA-N 1-hexene Chemical compound CCCCC=C LIKMAJRDDDTEIG-UHFFFAOYSA-N 0.000 description 2
- KWKAKUADMBZCLK-UHFFFAOYSA-N 1-octene Chemical compound CCCCCCC=C KWKAKUADMBZCLK-UHFFFAOYSA-N 0.000 description 2
- HIDBROSJWZYGSZ-UHFFFAOYSA-N 1-phenylpyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C1=CC=CC=C1 HIDBROSJWZYGSZ-UHFFFAOYSA-N 0.000 description 2
- XUVKSPPGPPFPQN-UHFFFAOYSA-N 10-Methyl-9(10H)-acridone Chemical compound C1=CC=C2N(C)C3=CC=CC=C3C(=O)C2=C1 XUVKSPPGPPFPQN-UHFFFAOYSA-N 0.000 description 2
- YBYIRNPNPLQARY-UHFFFAOYSA-N 1H-indene Chemical compound C1=CC=C2CC=CC2=C1 YBYIRNPNPLQARY-UHFFFAOYSA-N 0.000 description 2
- VEUMBMHMMCOFAG-UHFFFAOYSA-N 2,3-dihydrooxadiazole Chemical compound N1NC=CO1 VEUMBMHMMCOFAG-UHFFFAOYSA-N 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 2
- UHFFVFAKEGKNAQ-UHFFFAOYSA-N 2-benzyl-2-(dimethylamino)-1-(4-morpholin-4-ylphenyl)butan-1-one Chemical compound C=1C=C(N2CCOCC2)C=CC=1C(=O)C(CC)(N(C)C)CC1=CC=CC=C1 UHFFVFAKEGKNAQ-UHFFFAOYSA-N 0.000 description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 2
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 2
- LWRBVKNFOYUCNP-UHFFFAOYSA-N 2-methyl-1-(4-methylsulfanylphenyl)-2-morpholin-4-ylpropan-1-one Chemical compound C1=CC(SC)=CC=C1C(=O)C(C)(C)N1CCOCC1 LWRBVKNFOYUCNP-UHFFFAOYSA-N 0.000 description 2
- NJWGQARXZDRHCD-UHFFFAOYSA-N 2-methylanthraquinone Chemical compound C1=CC=C2C(=O)C3=CC(C)=CC=C3C(=O)C2=C1 NJWGQARXZDRHCD-UHFFFAOYSA-N 0.000 description 2
- GOLORTLGFDVFDW-UHFFFAOYSA-N 3-(1h-benzimidazol-2-yl)-7-(diethylamino)chromen-2-one Chemical compound C1=CC=C2NC(C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=NC2=C1 GOLORTLGFDVFDW-UHFFFAOYSA-N 0.000 description 2
- ODJQKYXPKWQWNK-UHFFFAOYSA-L 3-(2-carboxylatoethylsulfanyl)propanoate Chemical compound [O-]C(=O)CCSCCC([O-])=O ODJQKYXPKWQWNK-UHFFFAOYSA-L 0.000 description 2
- UWFHYGTWXNRUDH-UHFFFAOYSA-N 3-ethyl-3-[4-[(3-ethyloxetan-3-yl)methoxy]butoxymethyl]oxetane Chemical compound C1OCC1(CC)COCCCCOCC1(CC)COC1 UWFHYGTWXNRUDH-UHFFFAOYSA-N 0.000 description 2
- URDOJQUSEUXVRP-UHFFFAOYSA-N 3-triethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CCO[Si](OCC)(OCC)CCCOC(=O)C(C)=C URDOJQUSEUXVRP-UHFFFAOYSA-N 0.000 description 2
- TXFPEBPIARQUIG-UHFFFAOYSA-N 4'-hydroxyacetophenone Chemical compound CC(=O)C1=CC=C(O)C=C1 TXFPEBPIARQUIG-UHFFFAOYSA-N 0.000 description 2
- VVBLNCFGVYUYGU-UHFFFAOYSA-N 4,4'-Bis(dimethylamino)benzophenone Chemical compound C1=CC(N(C)C)=CC=C1C(=O)C1=CC=C(N(C)C)C=C1 VVBLNCFGVYUYGU-UHFFFAOYSA-N 0.000 description 2
- HVBSAKJJOYLTQU-UHFFFAOYSA-N 4-aminobenzenesulfonic acid Chemical compound NC1=CC=C(S(O)(=O)=O)C=C1 HVBSAKJJOYLTQU-UHFFFAOYSA-N 0.000 description 2
- PLIKAWJENQZMHA-UHFFFAOYSA-N 4-aminophenol Chemical compound NC1=CC=C(O)C=C1 PLIKAWJENQZMHA-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 229910002012 Aerosil® Inorganic materials 0.000 description 2
- 239000005995 Aluminium silicate Substances 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- FFOPEPMHKILNIT-UHFFFAOYSA-N Isopropyl butyrate Chemical compound CCCC(=O)OC(C)C FFOPEPMHKILNIT-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 2
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- 239000004721 Polyphenylene oxide Substances 0.000 description 2
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 2
- 239000004115 Sodium Silicate Substances 0.000 description 2
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 2
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- CGRTZESQZZGAAU-UHFFFAOYSA-N [2-[3-[1-[3-(3-tert-butyl-4-hydroxy-5-methylphenyl)propanoyloxy]-2-methylpropan-2-yl]-2,4,8,10-tetraoxaspiro[5.5]undecan-9-yl]-2-methylpropyl] 3-(3-tert-butyl-4-hydroxy-5-methylphenyl)propanoate Chemical compound CC(C)(C)C1=C(O)C(C)=CC(CCC(=O)OCC(C)(C)C2OCC3(CO2)COC(OC3)C(C)(C)COC(=O)CCC=2C=C(C(O)=C(C)C=2)C(C)(C)C)=C1 CGRTZESQZZGAAU-UHFFFAOYSA-N 0.000 description 2
- RJDOZRNNYVAULJ-UHFFFAOYSA-L [O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[F-].[F-].[Mg++].[Mg++].[Mg++].[Al+3].[Si+4].[Si+4].[Si+4].[K+] Chemical compound [O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[O--].[F-].[F-].[Mg++].[Mg++].[Mg++].[Al+3].[Si+4].[Si+4].[Si+4].[K+] RJDOZRNNYVAULJ-UHFFFAOYSA-L 0.000 description 2
- 150000008062 acetophenones Chemical class 0.000 description 2
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 description 2
- 238000012644 addition polymerization Methods 0.000 description 2
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 2
- 125000005907 alkyl ester group Chemical group 0.000 description 2
- 235000012211 aluminium silicate Nutrition 0.000 description 2
- 239000003945 anionic surfactant Substances 0.000 description 2
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 2
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 description 2
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- UCMIRNVEIXFBKS-UHFFFAOYSA-N beta-alanine Chemical compound NCCC(O)=O UCMIRNVEIXFBKS-UHFFFAOYSA-N 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 2
- 125000001246 bromo group Chemical group Br* 0.000 description 2
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 2
- XUPYJHCZDLZNFP-UHFFFAOYSA-N butyl butanoate Chemical compound CCCCOC(=O)CCC XUPYJHCZDLZNFP-UHFFFAOYSA-N 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 239000003093 cationic surfactant Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000007334 copolymerization reaction Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 150000004775 coumarins Chemical class 0.000 description 2
- 239000007822 coupling agent Substances 0.000 description 2
- 239000013039 cover film Substances 0.000 description 2
- 125000004122 cyclic group Chemical group 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- 239000000539 dimer Substances 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 238000007606 doctor blade method Methods 0.000 description 2
- SNRUBQQJIBEYMU-UHFFFAOYSA-N dodecane Chemical compound CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 2
- 239000000975 dye Substances 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 125000006575 electron-withdrawing group Chemical group 0.000 description 2
- 238000007590 electrostatic spraying Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- HOXINJBQVZWYGZ-UHFFFAOYSA-N fenbutatin oxide Chemical compound C=1C=CC=CC=1C(C)(C)C[Sn](O[Sn](CC(C)(C)C=1C=CC=CC=1)(CC(C)(C)C=1C=CC=CC=1)CC(C)(C)C=1C=CC=CC=1)(CC(C)(C)C=1C=CC=CC=1)CC(C)(C)C1=CC=CC=C1 HOXINJBQVZWYGZ-UHFFFAOYSA-N 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- BTCSSZJGUNDROE-UHFFFAOYSA-N gamma-aminobutyric acid Chemical compound NCCCC(O)=O BTCSSZJGUNDROE-UHFFFAOYSA-N 0.000 description 2
- 150000008282 halocarbons Chemical class 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- NGAZZOYFWWSOGK-UHFFFAOYSA-N heptan-3-one Chemical compound CCCCC(=O)CC NGAZZOYFWWSOGK-UHFFFAOYSA-N 0.000 description 2
- PQNFLJBBNBOBRQ-UHFFFAOYSA-N indane Chemical compound C1=CC=C2CCCC2=C1 PQNFLJBBNBOBRQ-UHFFFAOYSA-N 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 239000011256 inorganic filler Substances 0.000 description 2
- 229910003475 inorganic filler Inorganic materials 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- GJRQTCIYDGXPES-UHFFFAOYSA-N iso-butyl acetate Natural products CC(C)COC(C)=O GJRQTCIYDGXPES-UHFFFAOYSA-N 0.000 description 2
- MLFHJEHSLIIPHL-UHFFFAOYSA-N isoamyl acetate Chemical compound CC(C)CCOC(C)=O MLFHJEHSLIIPHL-UHFFFAOYSA-N 0.000 description 2
- FGKJLKRYENPLQH-UHFFFAOYSA-M isocaproate Chemical compound CC(C)CCC([O-])=O FGKJLKRYENPLQH-UHFFFAOYSA-M 0.000 description 2
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Natural products OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 2
- OQAGVSWESNCJJT-UHFFFAOYSA-N isovaleric acid methyl ester Natural products COC(=O)CC(C)C OQAGVSWESNCJJT-UHFFFAOYSA-N 0.000 description 2
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- AMXOYNBUYSYVKV-UHFFFAOYSA-M lithium bromide Chemical compound [Li+].[Br-] AMXOYNBUYSYVKV-UHFFFAOYSA-M 0.000 description 2
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 2
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 2
- 239000002736 nonionic surfactant Substances 0.000 description 2
- SNQQPOLDUKLAAF-UHFFFAOYSA-N nonylphenol Chemical class CCCCCCCCCC1=CC=CC=C1O SNQQPOLDUKLAAF-UHFFFAOYSA-N 0.000 description 2
- CCCMONHAUSKTEQ-UHFFFAOYSA-N octadec-1-ene Chemical compound CCCCCCCCCCCCCCCCC=C CCCMONHAUSKTEQ-UHFFFAOYSA-N 0.000 description 2
- 150000004010 onium ions Chemical class 0.000 description 2
- 239000012766 organic filler Substances 0.000 description 2
- 239000012860 organic pigment Substances 0.000 description 2
- WCPAKWJPBJAGKN-UHFFFAOYSA-N oxadiazole Chemical group C1=CON=N1 WCPAKWJPBJAGKN-UHFFFAOYSA-N 0.000 description 2
- MPQXHAGKBWFSNV-UHFFFAOYSA-N oxidophosphanium Chemical class [PH3]=O MPQXHAGKBWFSNV-UHFFFAOYSA-N 0.000 description 2
- XOKSLPVRUOBDEW-UHFFFAOYSA-N pinane Chemical compound CC1CCC2C(C)(C)C1C2 XOKSLPVRUOBDEW-UHFFFAOYSA-N 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920000570 polyether Polymers 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 2
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 2
- 238000010526 radical polymerization reaction Methods 0.000 description 2
- 238000007763 reverse roll coating Methods 0.000 description 2
- 238000007151 ring opening polymerisation reaction Methods 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 229910021647 smectite Inorganic materials 0.000 description 2
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 2
- 229910052911 sodium silicate Inorganic materials 0.000 description 2
- 238000009987 spinning Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 150000003440 styrenes Chemical class 0.000 description 2
- 125000000446 sulfanediyl group Chemical group *S* 0.000 description 2
- 125000000565 sulfonamide group Chemical group 0.000 description 2
- 239000000454 talc Substances 0.000 description 2
- 229910052623 talc Inorganic materials 0.000 description 2
- GJBRNHKUVLOCEB-UHFFFAOYSA-N tert-butyl benzenecarboperoxoate Chemical compound CC(C)(C)OOC(=O)C1=CC=CC=C1 GJBRNHKUVLOCEB-UHFFFAOYSA-N 0.000 description 2
- HJUGFYREWKUQJT-UHFFFAOYSA-N tetrabromomethane Chemical compound BrC(Br)(Br)Br HJUGFYREWKUQJT-UHFFFAOYSA-N 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 2
- IIYFAKIEWZDVMP-UHFFFAOYSA-N tridecane Chemical compound CCCCCCCCCCCCC IIYFAKIEWZDVMP-UHFFFAOYSA-N 0.000 description 2
- RSJKGSCJYJTIGS-UHFFFAOYSA-N undecane Chemical compound CCCCCCCCCCC RSJKGSCJYJTIGS-UHFFFAOYSA-N 0.000 description 2
- 229920001567 vinyl ester resin Polymers 0.000 description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 2
- JNELGWHKGNBSMD-UHFFFAOYSA-N xanthone Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3OC2=C1 JNELGWHKGNBSMD-UHFFFAOYSA-N 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- GGTSAXBNFONRAB-UHFFFAOYSA-N (1-methyl-2-phenyl-4-propan-2-ylcyclohexyl)benzene Chemical compound C1C(C(C)C)CCC(C)(C=2C=CC=CC=2)C1C1=CC=CC=C1 GGTSAXBNFONRAB-UHFFFAOYSA-N 0.000 description 1
- VMHYWKBKHMYRNF-UHFFFAOYSA-N (2-chlorophenyl)-phenylmethanone Chemical compound ClC1=CC=CC=C1C(=O)C1=CC=CC=C1 VMHYWKBKHMYRNF-UHFFFAOYSA-N 0.000 description 1
- CKGKXGQVRVAKEA-UHFFFAOYSA-N (2-methylphenyl)-phenylmethanone Chemical compound CC1=CC=CC=C1C(=O)C1=CC=CC=C1 CKGKXGQVRVAKEA-UHFFFAOYSA-N 0.000 description 1
- MTCFGRXMJLQNBG-REOHCLBHSA-N (2S)-2-Amino-3-hydroxypropansäure Chemical compound OC[C@H](N)C(O)=O MTCFGRXMJLQNBG-REOHCLBHSA-N 0.000 description 1
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- UNMJLQGKEDTEKJ-UHFFFAOYSA-N (3-ethyloxetan-3-yl)methanol Chemical compound CCC1(CO)COC1 UNMJLQGKEDTEKJ-UHFFFAOYSA-N 0.000 description 1
- URBLVRAVOIVZFJ-UHFFFAOYSA-N (3-methylphenyl)-phenylmethanone Chemical compound CC1=CC=CC(C(=O)C=2C=CC=CC=2)=C1 URBLVRAVOIVZFJ-UHFFFAOYSA-N 0.000 description 1
- MRUDPRFGMHTPFJ-UHFFFAOYSA-N (3-oxobutan-2-ylideneamino) acetate Chemical compound CC(=O)ON=C(C)C(C)=O MRUDPRFGMHTPFJ-UHFFFAOYSA-N 0.000 description 1
- SKCKRZWCOYHBEC-UHFFFAOYSA-N (3-oxobutan-2-ylideneamino) benzoate Chemical compound CC(=O)C(C)=NOC(=O)C1=CC=CC=C1 SKCKRZWCOYHBEC-UHFFFAOYSA-N 0.000 description 1
- JFFCVOSCPLKMLG-UHFFFAOYSA-N (3-oxobutan-2-ylideneamino) propanoate Chemical compound CCC(=O)ON=C(C)C(C)=O JFFCVOSCPLKMLG-UHFFFAOYSA-N 0.000 description 1
- HQLZSJJJXHJANW-UHFFFAOYSA-N (3-oxopentan-2-ylideneamino) acetate Chemical compound CCC(=O)C(C)=NOC(C)=O HQLZSJJJXHJANW-UHFFFAOYSA-N 0.000 description 1
- LRIUTQPZISVIHK-FNORWQNLSA-N (3e)-tetradeca-1,3-diene Chemical compound CCCCCCCCCC\C=C\C=C LRIUTQPZISVIHK-FNORWQNLSA-N 0.000 description 1
- KEOLYBMGRQYQTN-UHFFFAOYSA-N (4-bromophenyl)-phenylmethanone Chemical compound C1=CC(Br)=CC=C1C(=O)C1=CC=CC=C1 KEOLYBMGRQYQTN-UHFFFAOYSA-N 0.000 description 1
- SWFHGTMLYIBPPA-UHFFFAOYSA-N (4-methoxyphenyl)-phenylmethanone Chemical compound C1=CC(OC)=CC=C1C(=O)C1=CC=CC=C1 SWFHGTMLYIBPPA-UHFFFAOYSA-N 0.000 description 1
- WXPWZZHELZEVPO-UHFFFAOYSA-N (4-methylphenyl)-phenylmethanone Chemical compound C1=CC(C)=CC=C1C(=O)C1=CC=CC=C1 WXPWZZHELZEVPO-UHFFFAOYSA-N 0.000 description 1
- 125000003837 (C1-C20) alkyl group Chemical group 0.000 description 1
- 125000000923 (C1-C30) alkyl group Chemical group 0.000 description 1
- FFJCNSLCJOQHKM-CLFAGFIQSA-N (z)-1-[(z)-octadec-9-enoxy]octadec-9-ene Chemical compound CCCCCCCC\C=C/CCCCCCCCOCCCCCCCC\C=C/CCCCCCCC FFJCNSLCJOQHKM-CLFAGFIQSA-N 0.000 description 1
- MJYFYGVCLHNRKB-UHFFFAOYSA-N 1,1,2-trifluoroethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC(F)(F)CF MJYFYGVCLHNRKB-UHFFFAOYSA-N 0.000 description 1
- GPHWXFINOWXMDN-UHFFFAOYSA-N 1,1-bis(ethenoxy)hexane Chemical compound CCCCCC(OC=C)OC=C GPHWXFINOWXMDN-UHFFFAOYSA-N 0.000 description 1
- FLTNWMFPQFIBDA-UHFFFAOYSA-N 1,2,3,4-tetrahydronaphthalene Chemical compound C1=CC=C2CCCCC2=C1.C1=CC=C2CCCCC2=C1 FLTNWMFPQFIBDA-UHFFFAOYSA-N 0.000 description 1
- CGXVUIBINWTLNT-UHFFFAOYSA-N 1,2,3-tris(ethenoxy)propane Chemical compound C=COCC(OC=C)COC=C CGXVUIBINWTLNT-UHFFFAOYSA-N 0.000 description 1
- SKYXLDSRLNRAPS-UHFFFAOYSA-N 1,2,4-trifluoro-5-methoxybenzene Chemical compound COC1=CC(F)=C(F)C=C1F SKYXLDSRLNRAPS-UHFFFAOYSA-N 0.000 description 1
- USGYMDAUQBQWFU-UHFFFAOYSA-N 1,2,5,6-diepoxycyclooctane Chemical compound C1CC2OC2CCC2OC12 USGYMDAUQBQWFU-UHFFFAOYSA-N 0.000 description 1
- RBACIKXCRWGCBB-UHFFFAOYSA-N 1,2-Epoxybutane Chemical compound CCC1CO1 RBACIKXCRWGCBB-UHFFFAOYSA-N 0.000 description 1
- ZXHDVRATSGZISC-UHFFFAOYSA-N 1,2-bis(ethenoxy)ethane Chemical compound C=COCCOC=C ZXHDVRATSGZISC-UHFFFAOYSA-N 0.000 description 1
- LXSVCBDMOGLGFA-UHFFFAOYSA-N 1,2-bis(ethenoxy)propane Chemical compound C=COC(C)COC=C LXSVCBDMOGLGFA-UHFFFAOYSA-N 0.000 description 1
- MSAHTMIQULFMRG-UHFFFAOYSA-N 1,2-diphenyl-2-propan-2-yloxyethanone Chemical compound C=1C=CC=CC=1C(OC(C)C)C(=O)C1=CC=CC=C1 MSAHTMIQULFMRG-UHFFFAOYSA-N 0.000 description 1
- QVYIUYLZHORTBT-UHFFFAOYSA-N 1,3,5-trimethyl-2-(2-phenylethenyl)benzene Chemical compound CC1=CC(C)=CC(C)=C1C=CC1=CC=CC=C1 QVYIUYLZHORTBT-UHFFFAOYSA-N 0.000 description 1
- VNQNXQYZMPJLQX-UHFFFAOYSA-N 1,3,5-tris[(3,5-ditert-butyl-4-hydroxyphenyl)methyl]-1,3,5-triazinane-2,4,6-trione Chemical compound CC(C)(C)C1=C(O)C(C(C)(C)C)=CC(CN2C(N(CC=3C=C(C(O)=C(C=3)C(C)(C)C)C(C)(C)C)C(=O)N(CC=3C=C(C(O)=C(C=3)C(C)(C)C)C(C)(C)C)C2=O)=O)=C1 VNQNXQYZMPJLQX-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- MWZJGRDWJVHRDV-UHFFFAOYSA-N 1,4-bis(ethenoxy)butane Chemical compound C=COCCCCOC=C MWZJGRDWJVHRDV-UHFFFAOYSA-N 0.000 description 1
- AYMDJPGTQFHDSA-UHFFFAOYSA-N 1-(2-ethenoxyethoxy)-2-ethoxyethane Chemical compound CCOCCOCCOC=C AYMDJPGTQFHDSA-UHFFFAOYSA-N 0.000 description 1
- UNMYKPSSIFZORM-UHFFFAOYSA-N 1-(2-ethenoxyethoxy)butane Chemical compound CCCCOCCOC=C UNMYKPSSIFZORM-UHFFFAOYSA-N 0.000 description 1
- VRIINBPYPJEAHP-UHFFFAOYSA-N 1-(2-methylprop-2-enoyloxy)cyclohexane-1,2-dicarboxylic acid Chemical compound CC(=C)C(=O)OC1(C(O)=O)CCCCC1C(O)=O VRIINBPYPJEAHP-UHFFFAOYSA-N 0.000 description 1
- KLWGMEDURRDUPO-UHFFFAOYSA-N 1-(ethenoxymethyl)-4-methylcyclohexane Chemical compound CC1CCC(COC=C)CC1 KLWGMEDURRDUPO-UHFFFAOYSA-N 0.000 description 1
- AWOGBOARESKNBA-UHFFFAOYSA-N 1-[(3-ethyloxetan-3-yl)methoxy]propan-2-ol Chemical compound CC(O)COCC1(CC)COC1 AWOGBOARESKNBA-UHFFFAOYSA-N 0.000 description 1
- HUDYANRNMZDQGA-UHFFFAOYSA-N 1-[4-(dimethylamino)phenyl]ethanone Chemical compound CN(C)C1=CC=C(C(C)=O)C=C1 HUDYANRNMZDQGA-UHFFFAOYSA-N 0.000 description 1
- HNAGHMKIPMKKBB-UHFFFAOYSA-N 1-benzylpyrrolidine-3-carboxamide Chemical compound C1C(C(=O)N)CCN1CC1=CC=CC=C1 HNAGHMKIPMKKBB-UHFFFAOYSA-N 0.000 description 1
- SSZOCHFYWWVSAI-UHFFFAOYSA-N 1-bromo-2-ethenylbenzene Chemical compound BrC1=CC=CC=C1C=C SSZOCHFYWWVSAI-UHFFFAOYSA-N 0.000 description 1
- KQJQPCJDKBKSLV-UHFFFAOYSA-N 1-bromo-3-ethenylbenzene Chemical compound BrC1=CC=CC(C=C)=C1 KQJQPCJDKBKSLV-UHFFFAOYSA-N 0.000 description 1
- WGGLDBIZIQMEGH-UHFFFAOYSA-N 1-bromo-4-ethenylbenzene Chemical compound BrC1=CC=C(C=C)C=C1 WGGLDBIZIQMEGH-UHFFFAOYSA-N 0.000 description 1
- MCVHEVPSMITDCZ-UHFFFAOYSA-N 1-butyl-3-ethenylbenzene Chemical compound CCCCC1=CC=CC(C=C)=C1 MCVHEVPSMITDCZ-UHFFFAOYSA-N 0.000 description 1
- QOVCUELHTLHMEN-UHFFFAOYSA-N 1-butyl-4-ethenylbenzene Chemical compound CCCCC1=CC=C(C=C)C=C1 QOVCUELHTLHMEN-UHFFFAOYSA-N 0.000 description 1
- DJQUGRDXHMJDTJ-UHFFFAOYSA-N 1-chloro-10h-acridin-9-one Chemical compound N1C2=CC=CC=C2C(=O)C2=C1C=CC=C2Cl DJQUGRDXHMJDTJ-UHFFFAOYSA-N 0.000 description 1
- DNJRKFKAFWSXSE-UHFFFAOYSA-N 1-chloro-2-ethenoxyethane Chemical compound ClCCOC=C DNJRKFKAFWSXSE-UHFFFAOYSA-N 0.000 description 1
- BOVQCIDBZXNFEJ-UHFFFAOYSA-N 1-chloro-3-ethenylbenzene Chemical compound ClC1=CC=CC(C=C)=C1 BOVQCIDBZXNFEJ-UHFFFAOYSA-N 0.000 description 1
- PNEWSCXZLUPKET-UHFFFAOYSA-N 1-chloro-4-ethenoxybutane Chemical compound ClCCCCOC=C PNEWSCXZLUPKET-UHFFFAOYSA-N 0.000 description 1
- KTZVZZJJVJQZHV-UHFFFAOYSA-N 1-chloro-4-ethenylbenzene Chemical compound ClC1=CC=C(C=C)C=C1 KTZVZZJJVJQZHV-UHFFFAOYSA-N 0.000 description 1
- SAMJGBVVQUEMGC-UHFFFAOYSA-N 1-ethenoxy-2-(2-ethenoxyethoxy)ethane Chemical compound C=COCCOCCOC=C SAMJGBVVQUEMGC-UHFFFAOYSA-N 0.000 description 1
- HWCLMKDWXUGDKL-UHFFFAOYSA-N 1-ethenoxy-2-ethoxyethane Chemical compound CCOCCOC=C HWCLMKDWXUGDKL-UHFFFAOYSA-N 0.000 description 1
- GXZPMXGRNUXGHN-UHFFFAOYSA-N 1-ethenoxy-2-methoxyethane Chemical compound COCCOC=C GXZPMXGRNUXGHN-UHFFFAOYSA-N 0.000 description 1
- LAYAKLSFVAPMEL-UHFFFAOYSA-N 1-ethenoxydodecane Chemical compound CCCCCCCCCCCCOC=C LAYAKLSFVAPMEL-UHFFFAOYSA-N 0.000 description 1
- MIMKRVLJPMYKID-UHFFFAOYSA-N 1-ethenoxynonane Chemical compound CCCCCCCCCOC=C MIMKRVLJPMYKID-UHFFFAOYSA-N 0.000 description 1
- HAVHPQLVZUALTL-UHFFFAOYSA-N 1-ethenoxypropan-2-ol Chemical compound CC(O)COC=C HAVHPQLVZUALTL-UHFFFAOYSA-N 0.000 description 1
- OVGRCEFMXPHEBL-UHFFFAOYSA-N 1-ethenoxypropane Chemical compound CCCOC=C OVGRCEFMXPHEBL-UHFFFAOYSA-N 0.000 description 1
- VTPNYMSKBPZSTF-UHFFFAOYSA-N 1-ethenyl-2-ethylbenzene Chemical compound CCC1=CC=CC=C1C=C VTPNYMSKBPZSTF-UHFFFAOYSA-N 0.000 description 1
- YNQXOOPPJWSXMW-UHFFFAOYSA-N 1-ethenyl-2-fluorobenzene Chemical compound FC1=CC=CC=C1C=C YNQXOOPPJWSXMW-UHFFFAOYSA-N 0.000 description 1
- NVZWEEGUWXZOKI-UHFFFAOYSA-N 1-ethenyl-2-methylbenzene Chemical compound CC1=CC=CC=C1C=C NVZWEEGUWXZOKI-UHFFFAOYSA-N 0.000 description 1
- YBHWIVKIQYJYOH-UHFFFAOYSA-N 1-ethenyl-2-propan-2-ylbenzene Chemical compound CC(C)C1=CC=CC=C1C=C YBHWIVKIQYJYOH-UHFFFAOYSA-N 0.000 description 1
- XKMDZVINHIFHLY-UHFFFAOYSA-N 1-ethenyl-3,5-dimethylbenzene Chemical compound CC1=CC(C)=CC(C=C)=C1 XKMDZVINHIFHLY-UHFFFAOYSA-N 0.000 description 1
- UWSDKZHEJAHBPU-UHFFFAOYSA-N 1-ethenyl-3-(2-ethylhexyl)benzene Chemical compound CCCCC(CC)CC1=CC=CC(C=C)=C1 UWSDKZHEJAHBPU-UHFFFAOYSA-N 0.000 description 1
- ZJSKEGAHBAHFON-UHFFFAOYSA-N 1-ethenyl-3-fluorobenzene Chemical compound FC1=CC=CC(C=C)=C1 ZJSKEGAHBAHFON-UHFFFAOYSA-N 0.000 description 1
- NTNWNMJBZYLXDJ-UHFFFAOYSA-N 1-ethenyl-3-hexylbenzene Chemical compound CCCCCCC1=CC=CC(C=C)=C1 NTNWNMJBZYLXDJ-UHFFFAOYSA-N 0.000 description 1
- PECUPOXPPBBFLU-UHFFFAOYSA-N 1-ethenyl-3-methoxybenzene Chemical compound COC1=CC=CC(C=C)=C1 PECUPOXPPBBFLU-UHFFFAOYSA-N 0.000 description 1
- VKHPZPZWJZQGQS-UHFFFAOYSA-N 1-ethenyl-3-octylbenzene Chemical compound CCCCCCCCC1=CC=CC(C=C)=C1 VKHPZPZWJZQGQS-UHFFFAOYSA-N 0.000 description 1
- BYYLJVQCWRRFMP-UHFFFAOYSA-N 1-ethenyl-3-propan-2-ylbenzene Chemical compound CC(C)C1=CC=CC(C=C)=C1 BYYLJVQCWRRFMP-UHFFFAOYSA-N 0.000 description 1
- CYAOHDYNSBNYPZ-UHFFFAOYSA-N 1-ethenyl-3-propylbenzene Chemical compound CCCC1=CC=CC(C=C)=C1 CYAOHDYNSBNYPZ-UHFFFAOYSA-N 0.000 description 1
- GLJYMOUMOYMEJM-UHFFFAOYSA-N 1-ethenyl-4-(2-ethylhexyl)benzene Chemical compound CCCCC(CC)CC1=CC=C(C=C)C=C1 GLJYMOUMOYMEJM-UHFFFAOYSA-N 0.000 description 1
- GRFNSWBVXHLTCI-UHFFFAOYSA-N 1-ethenyl-4-[(2-methylpropan-2-yl)oxy]benzene Chemical compound CC(C)(C)OC1=CC=C(C=C)C=C1 GRFNSWBVXHLTCI-UHFFFAOYSA-N 0.000 description 1
- KEZDVVCDQRDBDN-UHFFFAOYSA-N 1-ethenyl-4-fluoro-2-methylbenzene Chemical compound CC1=CC(F)=CC=C1C=C KEZDVVCDQRDBDN-UHFFFAOYSA-N 0.000 description 1
- JWVTWJNGILGLAT-UHFFFAOYSA-N 1-ethenyl-4-fluorobenzene Chemical compound FC1=CC=C(C=C)C=C1 JWVTWJNGILGLAT-UHFFFAOYSA-N 0.000 description 1
- LCNAQVGAHQVWIN-UHFFFAOYSA-N 1-ethenyl-4-hexylbenzene Chemical compound CCCCCCC1=CC=C(C=C)C=C1 LCNAQVGAHQVWIN-UHFFFAOYSA-N 0.000 description 1
- HLRQDIVVLOCZPH-UHFFFAOYSA-N 1-ethenyl-4-octylbenzene Chemical compound CCCCCCCCC1=CC=C(C=C)C=C1 HLRQDIVVLOCZPH-UHFFFAOYSA-N 0.000 description 1
- QQHQTCGEZWTSEJ-UHFFFAOYSA-N 1-ethenyl-4-propan-2-ylbenzene Chemical compound CC(C)C1=CC=C(C=C)C=C1 QQHQTCGEZWTSEJ-UHFFFAOYSA-N 0.000 description 1
- VVTGQMLRTKFKAM-UHFFFAOYSA-N 1-ethenyl-4-propylbenzene Chemical compound CCCC1=CC=C(C=C)C=C1 VVTGQMLRTKFKAM-UHFFFAOYSA-N 0.000 description 1
- LIPRQQHINVWJCH-UHFFFAOYSA-N 1-ethoxypropan-2-yl acetate Chemical compound CCOCC(C)OC(C)=O LIPRQQHINVWJCH-UHFFFAOYSA-N 0.000 description 1
- OWMLPFXAVJAXQO-UHFFFAOYSA-N 1-iminobutan-2-one Chemical compound CCC(=O)C=N OWMLPFXAVJAXQO-UHFFFAOYSA-N 0.000 description 1
- UMWPTXOKSJXVDS-UHFFFAOYSA-N 1-methyl-2-propan-2-ylcyclohexane Chemical compound CC(C)C1CCCCC1C UMWPTXOKSJXVDS-UHFFFAOYSA-N 0.000 description 1
- QRDCBPPMQOPHOU-UHFFFAOYSA-N 1-methyl-3-propan-2-ylcyclohexane Chemical compound CC(C)C1CCCC(C)C1 QRDCBPPMQOPHOU-UHFFFAOYSA-N 0.000 description 1
- XLPJNCYCZORXHG-UHFFFAOYSA-N 1-morpholin-4-ylprop-2-en-1-one Chemical compound C=CC(=O)N1CCOCC1 XLPJNCYCZORXHG-UHFFFAOYSA-N 0.000 description 1
- 125000001637 1-naphthyl group Chemical group [H]C1=C([H])C([H])=C2C(*)=C([H])C([H])=C([H])C2=C1[H] 0.000 description 1
- DMFAHCVITRDZQB-UHFFFAOYSA-N 1-propoxypropan-2-yl acetate Chemical compound CCCOCC(C)OC(C)=O DMFAHCVITRDZQB-UHFFFAOYSA-N 0.000 description 1
- HFZLSTDPRQSZCQ-UHFFFAOYSA-N 1-pyrrolidin-3-ylpyrrolidine Chemical compound C1CCCN1C1CNCC1 HFZLSTDPRQSZCQ-UHFFFAOYSA-N 0.000 description 1
- 125000004214 1-pyrrolidinyl group Chemical group [H]C1([H])N(*)C([H])([H])C([H])([H])C1([H])[H] 0.000 description 1
- QEDJMOONZLUIMC-UHFFFAOYSA-N 1-tert-butyl-4-ethenylbenzene Chemical compound CC(C)(C)C1=CC=C(C=C)C=C1 QEDJMOONZLUIMC-UHFFFAOYSA-N 0.000 description 1
- WJFKNYWRSNBZNX-UHFFFAOYSA-N 10H-phenothiazine Chemical compound C1=CC=C2NC3=CC=CC=C3SC2=C1 WJFKNYWRSNBZNX-UHFFFAOYSA-N 0.000 description 1
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 1
- OAMHTTBNEJBIKA-UHFFFAOYSA-N 2,2,2-trichloro-1-phenylethanone Chemical compound ClC(Cl)(Cl)C(=O)C1=CC=CC=C1 OAMHTTBNEJBIKA-UHFFFAOYSA-N 0.000 description 1
- PTSBFVMVQZLXTA-UHFFFAOYSA-N 2,2-diethylhexane-1,1-diol Chemical compound CCCCC(CC)(CC)C(O)O PTSBFVMVQZLXTA-UHFFFAOYSA-N 0.000 description 1
- CZZVAVMGKRNEAT-UHFFFAOYSA-N 2,2-dimethylpropane-1,3-diol;3-hydroxy-2,2-dimethylpropanoic acid Chemical compound OCC(C)(C)CO.OCC(C)(C)C(O)=O CZZVAVMGKRNEAT-UHFFFAOYSA-N 0.000 description 1
- PUGOMSLRUSTQGV-UHFFFAOYSA-N 2,3-di(prop-2-enoyloxy)propyl prop-2-enoate Chemical class C=CC(=O)OCC(OC(=O)C=C)COC(=O)C=C PUGOMSLRUSTQGV-UHFFFAOYSA-N 0.000 description 1
- BTJPUDCSZVCXFQ-UHFFFAOYSA-N 2,4-diethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(CC)=CC(CC)=C3SC2=C1 BTJPUDCSZVCXFQ-UHFFFAOYSA-N 0.000 description 1
- ZJWDJIVISLUQQZ-UHFFFAOYSA-N 2,4-dimethylpentane-1,5-diol Chemical compound OCC(C)CC(C)CO ZJWDJIVISLUQQZ-UHFFFAOYSA-N 0.000 description 1
- STMDPCBYJCIZOD-UHFFFAOYSA-N 2-(2,4-dinitroanilino)-4-methylpentanoic acid Chemical compound CC(C)CC(C(O)=O)NC1=CC=C([N+]([O-])=O)C=C1[N+]([O-])=O STMDPCBYJCIZOD-UHFFFAOYSA-N 0.000 description 1
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- WULAHPYSGCVQHM-UHFFFAOYSA-N 2-(2-ethenoxyethoxy)ethanol Chemical compound OCCOCCOC=C WULAHPYSGCVQHM-UHFFFAOYSA-N 0.000 description 1
- URQQDYIVGXOEDA-UHFFFAOYSA-N 2-(2-ethenoxyethoxy)ethyl prop-2-enoate Chemical compound C=COCCOCCOC(=O)C=C URQQDYIVGXOEDA-UHFFFAOYSA-N 0.000 description 1
- BBBUAWSVILPJLL-UHFFFAOYSA-N 2-(2-ethylhexoxymethyl)oxirane Chemical compound CCCCC(CC)COCC1CO1 BBBUAWSVILPJLL-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- NNZJWOOLGPPUKX-UHFFFAOYSA-N 2-(2-phenylethenyl)-5-(trichloromethyl)-1,3,4-oxadiazole Chemical compound O1C(C(Cl)(Cl)Cl)=NN=C1C=CC1=CC=CC=C1 NNZJWOOLGPPUKX-UHFFFAOYSA-N 0.000 description 1
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 1
- OEPOKWHJYJXUGD-UHFFFAOYSA-N 2-(3-phenylmethoxyphenyl)-1,3-thiazole-4-carbaldehyde Chemical compound O=CC1=CSC(C=2C=C(OCC=3C=CC=CC=3)C=CC=2)=N1 OEPOKWHJYJXUGD-UHFFFAOYSA-N 0.000 description 1
- IWHCZNKJMUMKTL-UHFFFAOYSA-N 2-(4-chlorophenyl)-5-methyl-1,3,4-oxadiazole Chemical compound O1C(C)=NN=C1C1=CC=C(Cl)C=C1 IWHCZNKJMUMKTL-UHFFFAOYSA-N 0.000 description 1
- YSUQLAYJZDEMOT-UHFFFAOYSA-N 2-(butoxymethyl)oxirane Chemical compound CCCCOCC1CO1 YSUQLAYJZDEMOT-UHFFFAOYSA-N 0.000 description 1
- UIUSRIAANRCPGF-UHFFFAOYSA-N 2-(ethenoxymethyl)oxolane Chemical compound C=COCC1CCCO1 UIUSRIAANRCPGF-UHFFFAOYSA-N 0.000 description 1
- QTUVQQKHBMGYEH-UHFFFAOYSA-N 2-(trichloromethyl)-1,3,5-triazine Chemical class ClC(Cl)(Cl)C1=NC=NC=N1 QTUVQQKHBMGYEH-UHFFFAOYSA-N 0.000 description 1
- GJKGAPPUXSSCFI-UHFFFAOYSA-N 2-Hydroxy-4'-(2-hydroxyethoxy)-2-methylpropiophenone Chemical compound CC(C)(O)C(=O)C1=CC=C(OCCO)C=C1 GJKGAPPUXSSCFI-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- MJNGDTGKCWWIOP-UHFFFAOYSA-N 2-[(3-ethyloxetan-3-yl)methoxy]ethanol Chemical compound OCCOCC1(CC)COC1 MJNGDTGKCWWIOP-UHFFFAOYSA-N 0.000 description 1
- SNAGVRNJNARVRV-UHFFFAOYSA-N 2-[(3-ethyloxetan-3-yl)methoxymethyl]oxolane Chemical compound C1CCOC1COCC1(CC)COC1 SNAGVRNJNARVRV-UHFFFAOYSA-N 0.000 description 1
- HHRACYLRBOUBKM-UHFFFAOYSA-N 2-[(4-tert-butylphenoxy)methyl]oxirane Chemical compound C1=CC(C(C)(C)C)=CC=C1OCC1OC1 HHRACYLRBOUBKM-UHFFFAOYSA-N 0.000 description 1
- OADIZUFHUPTFAG-UHFFFAOYSA-N 2-[2-(2-ethylhexoxy)ethoxy]ethanol Chemical compound CCCCC(CC)COCCOCCO OADIZUFHUPTFAG-UHFFFAOYSA-N 0.000 description 1
- LBNDGEZENJUBCO-UHFFFAOYSA-N 2-[2-(2-methylprop-2-enoyloxy)ethyl]butanedioic acid Chemical compound CC(=C)C(=O)OCCC(C(O)=O)CC(O)=O LBNDGEZENJUBCO-UHFFFAOYSA-N 0.000 description 1
- IJXPXNZUSXLSTF-UHFFFAOYSA-N 2-[2-(4-butoxyphenyl)ethenyl]-5-(trichloromethyl)-1,3,4-oxadiazole Chemical compound C1=CC(OCCCC)=CC=C1C=CC1=NN=C(C(Cl)(Cl)Cl)O1 IJXPXNZUSXLSTF-UHFFFAOYSA-N 0.000 description 1
- JIKJXWFVPDDJNU-UHFFFAOYSA-N 2-[2-(4-methoxyphenyl)ethenyl]-5-(trichloromethyl)-1,3,4-oxadiazole Chemical compound C1=CC(OC)=CC=C1C=CC1=NN=C(C(Cl)(Cl)Cl)O1 JIKJXWFVPDDJNU-UHFFFAOYSA-N 0.000 description 1
- AOBIOSPNXBMOAT-UHFFFAOYSA-N 2-[2-(oxiran-2-ylmethoxy)ethoxymethyl]oxirane Chemical compound C1OC1COCCOCC1CO1 AOBIOSPNXBMOAT-UHFFFAOYSA-N 0.000 description 1
- DVSDTPMZVLDKRT-UHFFFAOYSA-N 2-[2-[(3-ethyloxetan-3-yl)methoxy]butoxy]ethanol Chemical compound OCCOCC(CC)OCC1(CC)COC1 DVSDTPMZVLDKRT-UHFFFAOYSA-N 0.000 description 1
- UIYHOYPTLHBZIR-UHFFFAOYSA-N 2-[2-[2-[2-[(3-ethyloxetan-3-yl)methoxy]ethoxy]ethoxy]ethoxy]ethanol Chemical compound C(C)C1(COC1)COCCOCCOCCOCCO UIYHOYPTLHBZIR-UHFFFAOYSA-N 0.000 description 1
- VFBJXXJYHWLXRM-UHFFFAOYSA-N 2-[2-[3-(3,5-ditert-butyl-4-hydroxyphenyl)propanoyloxy]ethylsulfanyl]ethyl 3-(3,5-ditert-butyl-4-hydroxyphenyl)propanoate Chemical compound CC(C)(C)C1=C(O)C(C(C)(C)C)=CC(CCC(=O)OCCSCCOC(=O)CCC=2C=C(C(O)=C(C=2)C(C)(C)C)C(C)(C)C)=C1 VFBJXXJYHWLXRM-UHFFFAOYSA-N 0.000 description 1
- VLJFHOQFPSGZPC-UHFFFAOYSA-N 2-[2-hydroxy-5-(2-methylprop-2-enoyloxy)pentoxy]carbonylbenzoic acid Chemical compound CC(=C)C(=O)OCCCC(O)COC(=O)C1=CC=CC=C1C(O)=O VLJFHOQFPSGZPC-UHFFFAOYSA-N 0.000 description 1
- SHKUUQIDMUMQQK-UHFFFAOYSA-N 2-[4-(oxiran-2-ylmethoxy)butoxymethyl]oxirane Chemical compound C1OC1COCCCCOCC1CO1 SHKUUQIDMUMQQK-UHFFFAOYSA-N 0.000 description 1
- WTYYGFLRBWMFRY-UHFFFAOYSA-N 2-[6-(oxiran-2-ylmethoxy)hexoxymethyl]oxirane Chemical compound C1OC1COCCCCCCOCC1CO1 WTYYGFLRBWMFRY-UHFFFAOYSA-N 0.000 description 1
- XFEJHTOVNZKSKW-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol;propanoic acid Chemical compound CCC(O)=O.OCC(CO)(CO)COCC(CO)(CO)CO XFEJHTOVNZKSKW-UHFFFAOYSA-N 0.000 description 1
- FGTYTUFKXYPTML-UHFFFAOYSA-N 2-benzoylbenzoic acid Chemical compound OC(=O)C1=CC=CC=C1C(=O)C1=CC=CC=C1 FGTYTUFKXYPTML-UHFFFAOYSA-N 0.000 description 1
- DSKYSDCYIODJPC-UHFFFAOYSA-N 2-butyl-2-ethylpropane-1,3-diol Chemical compound CCCCC(CC)(CO)CO DSKYSDCYIODJPC-UHFFFAOYSA-N 0.000 description 1
- SBYMUDUGTIKLCR-UHFFFAOYSA-N 2-chloroethenylbenzene Chemical compound ClC=CC1=CC=CC=C1 SBYMUDUGTIKLCR-UHFFFAOYSA-N 0.000 description 1
- 125000001340 2-chloroethyl group Chemical group [H]C([H])(Cl)C([H])([H])* 0.000 description 1
- ISRGONDNXBCDBM-UHFFFAOYSA-N 2-chlorostyrene Chemical compound ClC1=CC=CC=C1C=C ISRGONDNXBCDBM-UHFFFAOYSA-N 0.000 description 1
- ZCDADJXRUCOCJE-UHFFFAOYSA-N 2-chlorothioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(Cl)=CC=C3SC2=C1 ZCDADJXRUCOCJE-UHFFFAOYSA-N 0.000 description 1
- 125000001731 2-cyanoethyl group Chemical group [H]C([H])(*)C([H])([H])C#N 0.000 description 1
- MPGABYXKKCLIRW-UHFFFAOYSA-N 2-decyloxirane Chemical compound CCCCCCCCCCC1CO1 MPGABYXKKCLIRW-UHFFFAOYSA-N 0.000 description 1
- ZVUNTIMPQCQCAQ-UHFFFAOYSA-N 2-dodecanoyloxyethyl dodecanoate Chemical compound CCCCCCCCCCCC(=O)OCCOC(=O)CCCCCCCCCCC ZVUNTIMPQCQCAQ-UHFFFAOYSA-N 0.000 description 1
- IELQNQLDZIHBPK-UHFFFAOYSA-N 2-ethenoxy-1-ethoxy-1-methoxyethane Chemical compound CCOC(OC)COC=C IELQNQLDZIHBPK-UHFFFAOYSA-N 0.000 description 1
- PGYJSURPYAAOMM-UHFFFAOYSA-N 2-ethenoxy-2-methylpropane Chemical compound CC(C)(C)OC=C PGYJSURPYAAOMM-UHFFFAOYSA-N 0.000 description 1
- VUIWJRYTWUGOOF-UHFFFAOYSA-N 2-ethenoxyethanol Chemical compound OCCOC=C VUIWJRYTWUGOOF-UHFFFAOYSA-N 0.000 description 1
- OUELSYYMNDBLHV-UHFFFAOYSA-N 2-ethenoxyethylbenzene Chemical compound C=COCCC1=CC=CC=C1 OUELSYYMNDBLHV-UHFFFAOYSA-N 0.000 description 1
- DBWWINQJTZYDFK-UHFFFAOYSA-N 2-ethenyl-1,4-dimethylbenzene Chemical compound CC1=CC=C(C)C(C=C)=C1 DBWWINQJTZYDFK-UHFFFAOYSA-N 0.000 description 1
- QQBUHYQVKJQAOB-UHFFFAOYSA-N 2-ethenylfuran Chemical compound C=CC1=CC=CO1 QQBUHYQVKJQAOB-UHFFFAOYSA-N 0.000 description 1
- KMNCBSZOIQAUFX-UHFFFAOYSA-N 2-ethoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OCC)C(=O)C1=CC=CC=C1 KMNCBSZOIQAUFX-UHFFFAOYSA-N 0.000 description 1
- WVQHODUGKTXKQF-UHFFFAOYSA-N 2-ethyl-2-methylhexane-1,1-diol Chemical compound CCCCC(C)(CC)C(O)O WVQHODUGKTXKQF-UHFFFAOYSA-N 0.000 description 1
- TZLVUWBGUNVFES-UHFFFAOYSA-N 2-ethyl-5-methylpyrazol-3-amine Chemical compound CCN1N=C(C)C=C1N TZLVUWBGUNVFES-UHFFFAOYSA-N 0.000 description 1
- NJWSNNWLBMSXQR-UHFFFAOYSA-N 2-hexyloxirane Chemical compound CCCCCCC1CO1 NJWSNNWLBMSXQR-UHFFFAOYSA-N 0.000 description 1
- PCKZAVNWRLEHIP-UHFFFAOYSA-N 2-hydroxy-1-[4-[[4-(2-hydroxy-2-methylpropanoyl)phenyl]methyl]phenyl]-2-methylpropan-1-one Chemical compound C1=CC(C(=O)C(C)(O)C)=CC=C1CC1=CC=C(C(=O)C(C)(C)O)C=C1 PCKZAVNWRLEHIP-UHFFFAOYSA-N 0.000 description 1
- ZWVHTXAYIKBMEE-UHFFFAOYSA-N 2-hydroxyacetophenone Chemical class OCC(=O)C1=CC=CC=C1 ZWVHTXAYIKBMEE-UHFFFAOYSA-N 0.000 description 1
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 1
- BQZJOQXSCSZQPS-UHFFFAOYSA-N 2-methoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OC)C(=O)C1=CC=CC=C1 BQZJOQXSCSZQPS-UHFFFAOYSA-N 0.000 description 1
- BKBZFJRHYSCZQA-UHFFFAOYSA-N 2-methoxy-2-methylpropanoic acid Chemical compound COC(C)(C)C(O)=O BKBZFJRHYSCZQA-UHFFFAOYSA-N 0.000 description 1
- CTHJQRHPNQEPAB-UHFFFAOYSA-N 2-methoxyethenylbenzene Chemical compound COC=CC1=CC=CC=C1 CTHJQRHPNQEPAB-UHFFFAOYSA-N 0.000 description 1
- ICPWFHKNYYRBSZ-UHFFFAOYSA-M 2-methoxypropanoate Chemical compound COC(C)C([O-])=O ICPWFHKNYYRBSZ-UHFFFAOYSA-M 0.000 description 1
- BAWPQHHUILXQGW-UHFFFAOYSA-N 2-methyl-1-(4-prop-1-en-2-ylphenyl)propane-1,2-diol Chemical compound CC(=C)C1=CC=C(C(O)C(C)(C)O)C=C1 BAWPQHHUILXQGW-UHFFFAOYSA-N 0.000 description 1
- RIWRBSMFKVOJMN-UHFFFAOYSA-N 2-methyl-1-phenylpropan-2-ol Chemical compound CC(C)(O)CC1=CC=CC=C1 RIWRBSMFKVOJMN-UHFFFAOYSA-N 0.000 description 1
- JMMZCWZIJXAGKW-UHFFFAOYSA-N 2-methylpent-2-ene Chemical compound CCC=C(C)C JMMZCWZIJXAGKW-UHFFFAOYSA-N 0.000 description 1
- MIUYEAQDHPVUNY-UHFFFAOYSA-N 2-naphthalen-1-yl-5-(trichloromethyl)-1,3,4-oxadiazole Chemical compound O1C(C(Cl)(Cl)Cl)=NN=C1C1=CC=CC2=CC=CC=C12 MIUYEAQDHPVUNY-UHFFFAOYSA-N 0.000 description 1
- QPQDRKMZQYSVAN-UHFFFAOYSA-N 2-naphthalen-2-yl-5-(tribromomethyl)-1,3,4-oxadiazole Chemical compound O1C(C(Br)(Br)Br)=NN=C1C1=CC=C(C=CC=C2)C2=C1 QPQDRKMZQYSVAN-UHFFFAOYSA-N 0.000 description 1
- ATCQBNBWQDWKAF-UHFFFAOYSA-N 2-naphthalen-2-yl-5-(trichloromethyl)-1,3,4-oxadiazole Chemical compound O1C(C(Cl)(Cl)Cl)=NN=C1C1=CC=C(C=CC=C2)C2=C1 ATCQBNBWQDWKAF-UHFFFAOYSA-N 0.000 description 1
- AAMHBRRZYSORSH-UHFFFAOYSA-N 2-octyloxirane Chemical compound CCCCCCCCC1CO1 AAMHBRRZYSORSH-UHFFFAOYSA-N 0.000 description 1
- AXYQEGMSGMXGGK-UHFFFAOYSA-N 2-phenoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(=O)C(C=1C=CC=CC=1)OC1=CC=CC=C1 AXYQEGMSGMXGGK-UHFFFAOYSA-N 0.000 description 1
- UAJYMEORHSIBOF-UHFFFAOYSA-N 2-phenyl-5-(tribromomethyl)-1,3,4-oxadiazole Chemical compound O1C(C(Br)(Br)Br)=NN=C1C1=CC=CC=C1 UAJYMEORHSIBOF-UHFFFAOYSA-N 0.000 description 1
- ZJUAJDHQUFXWLV-UHFFFAOYSA-N 2-phenyl-5-(trichloromethyl)-1,3,4-oxadiazole Chemical compound O1C(C(Cl)(Cl)Cl)=NN=C1C1=CC=CC=C1 ZJUAJDHQUFXWLV-UHFFFAOYSA-N 0.000 description 1
- FMFHUEMLVAIBFI-UHFFFAOYSA-N 2-phenylethenyl acetate Chemical compound CC(=O)OC=CC1=CC=CC=C1 FMFHUEMLVAIBFI-UHFFFAOYSA-N 0.000 description 1
- YTPSFXZMJKMUJE-UHFFFAOYSA-N 2-tert-butylanthracene-9,10-dione Chemical compound C1=CC=C2C(=O)C3=CC(C(C)(C)C)=CC=C3C(=O)C2=C1 YTPSFXZMJKMUJE-UHFFFAOYSA-N 0.000 description 1
- NCCTVAJNFXYWTM-UHFFFAOYSA-N 2-tert-butylcyclohexa-2,5-diene-1,4-dione Chemical compound CC(C)(C)C1=CC(=O)C=CC1=O NCCTVAJNFXYWTM-UHFFFAOYSA-N 0.000 description 1
- KGIGUEBEKRSTEW-UHFFFAOYSA-N 2-vinylpyridine Chemical compound C=CC1=CC=CC=N1 KGIGUEBEKRSTEW-UHFFFAOYSA-N 0.000 description 1
- ORNUPNRNNSVZTC-UHFFFAOYSA-N 2-vinylthiophene Chemical compound C=CC1=CC=CS1 ORNUPNRNNSVZTC-UHFFFAOYSA-N 0.000 description 1
- UENRXLSRMCSUSN-UHFFFAOYSA-N 3,5-diaminobenzoic acid Chemical compound NC1=CC(N)=CC(C(O)=O)=C1 UENRXLSRMCSUSN-UHFFFAOYSA-N 0.000 description 1
- DOPJDUKVDLSBPL-UHFFFAOYSA-N 3-(1-benzofuran-2-carbonyl)-7-(diethylamino)chromen-2-one Chemical compound C1=CC=C2OC(C(=O)C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=CC2=C1 DOPJDUKVDLSBPL-UHFFFAOYSA-N 0.000 description 1
- HGCHXPWVBFSUDT-UHFFFAOYSA-N 3-(2-butoxyethoxymethyl)-3-ethyloxetane Chemical compound CCCCOCCOCC1(CC)COC1 HGCHXPWVBFSUDT-UHFFFAOYSA-N 0.000 description 1
- POTFCSBOXWLDJQ-UHFFFAOYSA-N 3-(2-oxo-5,7-dipropoxychromene-3-carbonyl)-5,7-dipropoxychromen-2-one Chemical compound C1=C(OCCC)C=C2OC(=O)C(C(=O)C3=CC4=C(OCCC)C=C(C=C4OC3=O)OCCC)=CC2=C1OCCC POTFCSBOXWLDJQ-UHFFFAOYSA-N 0.000 description 1
- DSSAWHFZNWVJEC-UHFFFAOYSA-N 3-(ethenoxymethyl)heptane Chemical compound CCCCC(CC)COC=C DSSAWHFZNWVJEC-UHFFFAOYSA-N 0.000 description 1
- HVPDSJGSPQPARJ-UHFFFAOYSA-N 3-(ethoxymethyl)-3-ethyloxetane Chemical compound CCOCC1(CC)COC1 HVPDSJGSPQPARJ-UHFFFAOYSA-N 0.000 description 1
- SLJFKNONPLNAPF-UHFFFAOYSA-N 3-Vinyl-7-oxabicyclo[4.1.0]heptane Chemical compound C1C(C=C)CCC2OC21 SLJFKNONPLNAPF-UHFFFAOYSA-N 0.000 description 1
- WKXMZIDBVDIVME-UHFFFAOYSA-N 3-[(3-ethyloxetan-3-yl)methoxy]-2,2-bis[(3-ethyloxetan-3-yl)methoxymethyl]propan-1-ol Chemical compound C1OCC1(CC)COCC(CO)(COCC1(CC)COC1)COCC1(CC)COC1 WKXMZIDBVDIVME-UHFFFAOYSA-N 0.000 description 1
- MKNOYISMZFDLQP-UHFFFAOYSA-N 3-[1-[2-(oxetan-3-yl)butoxy]butan-2-yl]oxetane Chemical compound C1OCC1C(CC)COCC(CC)C1COC1 MKNOYISMZFDLQP-UHFFFAOYSA-N 0.000 description 1
- LZMNXXQIQIHFGC-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propyl 2-methylprop-2-enoate Chemical compound CO[Si](C)(OC)CCCOC(=O)C(C)=C LZMNXXQIQIHFGC-UHFFFAOYSA-N 0.000 description 1
- DIHMJMCGHJMDSE-UHFFFAOYSA-N 3-benzoyl-5,7-dipropoxychromen-2-one Chemical compound O=C1OC2=CC(OCCC)=CC(OCCC)=C2C=C1C(=O)C1=CC=CC=C1 DIHMJMCGHJMDSE-UHFFFAOYSA-N 0.000 description 1
- CPVJWBWVJUAOMV-UHFFFAOYSA-N 3-benzoyl-7-(diethylamino)chromen-2-one Chemical compound O=C1OC2=CC(N(CC)CC)=CC=C2C=C1C(=O)C1=CC=CC=C1 CPVJWBWVJUAOMV-UHFFFAOYSA-N 0.000 description 1
- HYORIVUCOQKMOC-UHFFFAOYSA-N 3-benzoyl-7-methoxychromen-2-one Chemical compound O=C1OC2=CC(OC)=CC=C2C=C1C(=O)C1=CC=CC=C1 HYORIVUCOQKMOC-UHFFFAOYSA-N 0.000 description 1
- IWTYTFSSTWXZFU-UHFFFAOYSA-N 3-chloroprop-1-enylbenzene Chemical compound ClCC=CC1=CC=CC=C1 IWTYTFSSTWXZFU-UHFFFAOYSA-N 0.000 description 1
- OXYZDRAJMHGSMW-UHFFFAOYSA-N 3-chloropropyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)CCCCl OXYZDRAJMHGSMW-UHFFFAOYSA-N 0.000 description 1
- FVGDNYRHKDREFL-UHFFFAOYSA-N 3-ethyl-3-(1-phenoxyethoxymethyl)oxetane Chemical compound C=1C=CC=CC=1OC(C)OCC1(CC)COC1 FVGDNYRHKDREFL-UHFFFAOYSA-N 0.000 description 1
- PWGAXPBJOGFFMY-UHFFFAOYSA-N 3-ethyl-3-(2-methylpropoxymethoxymethyl)oxetane Chemical compound CC(C)COCOCC1(CC)COC1 PWGAXPBJOGFFMY-UHFFFAOYSA-N 0.000 description 1
- DILMQZOSIJKYHA-UHFFFAOYSA-N 3-ethyl-3-[(2,3,4,5,6-pentabromophenoxy)methyl]oxetane Chemical compound BrC=1C(Br)=C(Br)C(Br)=C(Br)C=1OCC1(CC)COC1 DILMQZOSIJKYHA-UHFFFAOYSA-N 0.000 description 1
- FQUZJULGTSCUDF-UHFFFAOYSA-N 3-ethyl-3-[(2,3,4,5,6-pentachlorophenoxy)methyl]oxetane Chemical compound ClC=1C(Cl)=C(Cl)C(Cl)=C(Cl)C=1OCC1(CC)COC1 FQUZJULGTSCUDF-UHFFFAOYSA-N 0.000 description 1
- PBXYBVUSKINNJL-UHFFFAOYSA-N 3-ethyl-3-[(2,3,4-tribromophenoxy)methyl]oxetane Chemical compound C=1C=C(Br)C(Br)=C(Br)C=1OCC1(CC)COC1 PBXYBVUSKINNJL-UHFFFAOYSA-N 0.000 description 1
- LNZCVOLEQJDCJG-UHFFFAOYSA-N 3-ethyl-3-[(2-methylphenoxy)methyl]oxetane Chemical compound C=1C=CC=C(C)C=1OCC1(CC)COC1 LNZCVOLEQJDCJG-UHFFFAOYSA-N 0.000 description 1
- JCBNYALMACLNBI-UHFFFAOYSA-N 3-ethyl-3-[(3-fluorophenyl)methoxymethyl]oxetane Chemical compound FC1=CC(=CC=C1)COCC1(COC1)CC JCBNYALMACLNBI-UHFFFAOYSA-N 0.000 description 1
- PENKVNGNXDMJKV-UHFFFAOYSA-N 3-ethyl-3-[(4-methoxyphenyl)methoxymethyl]oxetane Chemical compound C=1C=C(OC)C=CC=1COCC1(CC)COC1 PENKVNGNXDMJKV-UHFFFAOYSA-N 0.000 description 1
- SLNCKLVYLZHRKK-UHFFFAOYSA-N 3-ethyl-3-[2-[(3-ethyloxetan-3-yl)methoxy]ethoxymethyl]oxetane Chemical compound C1OCC1(CC)COCCOCC1(CC)COC1 SLNCKLVYLZHRKK-UHFFFAOYSA-N 0.000 description 1
- ARTCZOWQELAGLQ-UHFFFAOYSA-N 3-ethyl-3-[2-[2-[2-[(3-ethyloxetan-3-yl)methoxy]ethoxy]ethoxy]ethoxymethyl]oxetane Chemical compound C1OCC1(CC)COCCOCCOCCOCC1(CC)COC1 ARTCZOWQELAGLQ-UHFFFAOYSA-N 0.000 description 1
- UXEOSBGULDWPRJ-UHFFFAOYSA-N 3-ethyl-3-[5-[(3-ethyloxetan-3-yl)methoxy]pentoxymethyl]oxetane Chemical compound C1OCC1(CC)COCCCCCOCC1(CC)COC1 UXEOSBGULDWPRJ-UHFFFAOYSA-N 0.000 description 1
- GBDPVIKGIRHANI-UHFFFAOYSA-N 3-ethyl-3-[6-[(3-ethyloxetan-3-yl)methoxy]hexoxymethyl]oxetane Chemical compound C1OCC1(CC)COCCCCCCOCC1(CC)COC1 GBDPVIKGIRHANI-UHFFFAOYSA-N 0.000 description 1
- HPINXYMPRYQBGF-UHFFFAOYSA-N 3-ethyl-3-[[3-[(3-ethyloxetan-3-yl)methoxy]-2,2-bis[(3-ethyloxetan-3-yl)methoxymethyl]propoxy]methyl]oxetane Chemical compound C1OCC1(CC)COCC(COCC1(CC)COC1)(COCC1(CC)COC1)COCC1(CC)COC1 HPINXYMPRYQBGF-UHFFFAOYSA-N 0.000 description 1
- LMIOYAVXLAOXJI-UHFFFAOYSA-N 3-ethyl-3-[[4-[(3-ethyloxetan-3-yl)methoxymethyl]phenyl]methoxymethyl]oxetane Chemical compound C=1C=C(COCC2(CC)COC2)C=CC=1COCC1(CC)COC1 LMIOYAVXLAOXJI-UHFFFAOYSA-N 0.000 description 1
- CGRJJOYCFCCGPX-UHFFFAOYSA-N 3-ethyloxetane Chemical compound CCC1COC1 CGRJJOYCFCCGPX-UHFFFAOYSA-N 0.000 description 1
- QOXOZONBQWIKDA-UHFFFAOYSA-N 3-hydroxypropyl Chemical group [CH2]CCO QOXOZONBQWIKDA-UHFFFAOYSA-N 0.000 description 1
- CEBRPXLXYCFYGU-UHFFFAOYSA-N 3-methylbut-1-enylbenzene Chemical compound CC(C)C=CC1=CC=CC=C1 CEBRPXLXYCFYGU-UHFFFAOYSA-N 0.000 description 1
- ZTHJQCDAHYOPIK-UHFFFAOYSA-N 3-methylbut-2-en-2-ylbenzene Chemical compound CC(C)=C(C)C1=CC=CC=C1 ZTHJQCDAHYOPIK-UHFFFAOYSA-N 0.000 description 1
- MECNWXGGNCJFQJ-UHFFFAOYSA-N 3-piperidin-1-ylpropane-1,2-diol Chemical compound OCC(O)CN1CCCCC1 MECNWXGGNCJFQJ-UHFFFAOYSA-N 0.000 description 1
- LVNLBBGBASVLLI-UHFFFAOYSA-N 3-triethoxysilylpropylurea Chemical compound CCO[Si](OCC)(OCC)CCCNC(N)=O LVNLBBGBASVLLI-UHFFFAOYSA-N 0.000 description 1
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 1
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 1
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 1
- KBQVDAIIQCXKPI-UHFFFAOYSA-N 3-trimethoxysilylpropyl prop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C=C KBQVDAIIQCXKPI-UHFFFAOYSA-N 0.000 description 1
- UFERIGCCDYCZLN-UHFFFAOYSA-N 3a,4,7,7a-tetrahydro-1h-indene Chemical compound C1C=CCC2CC=CC21 UFERIGCCDYCZLN-UHFFFAOYSA-N 0.000 description 1
- UITKHKNFVCYWNG-UHFFFAOYSA-N 4-(3,4-dicarboxybenzoyl)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 UITKHKNFVCYWNG-UHFFFAOYSA-N 0.000 description 1
- HYYPKCMPDGCDHE-UHFFFAOYSA-N 4-(7-oxabicyclo[4.1.0]heptan-4-ylmethyl)-7-oxabicyclo[4.1.0]heptane Chemical compound C1CC2OC2CC1CC1CC2OC2CC1 HYYPKCMPDGCDHE-UHFFFAOYSA-N 0.000 description 1
- IMDQDSLAUVKLAO-UHFFFAOYSA-N 4-[2-(4-carboxy-7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]-7-oxabicyclo[4.1.0]heptane-4-carboxylic acid Chemical compound C1CC2OC2CC1(C(O)=O)CCC1(C(=O)O)CC2OC2CC1 IMDQDSLAUVKLAO-UHFFFAOYSA-N 0.000 description 1
- YFLRTUOBKDGQDO-UHFFFAOYSA-N 4-[2-(7-oxabicyclo[4.1.0]heptan-4-ylmethoxy)ethoxymethyl]-7-oxabicyclo[4.1.0]heptane Chemical compound C1CC2OC2CC1COCCOCC1CC2OC2CC1 YFLRTUOBKDGQDO-UHFFFAOYSA-N 0.000 description 1
- OJXULZRBAPPHNY-UHFFFAOYSA-N 4-[[(4-aminophenyl)-dimethylsilyl]oxy-dimethylsilyl]aniline Chemical compound C=1C=C(N)C=CC=1[Si](C)(C)O[Si](C)(C)C1=CC=C(N)C=C1 OJXULZRBAPPHNY-UHFFFAOYSA-N 0.000 description 1
- OXSANYRLJHSQEP-UHFFFAOYSA-N 4-aminophthalic acid Chemical compound NC1=CC=C(C(O)=O)C(C(O)=O)=C1 OXSANYRLJHSQEP-UHFFFAOYSA-N 0.000 description 1
- ACQVEWFMUBXEMR-UHFFFAOYSA-N 4-bromo-2-fluoro-6-nitrophenol Chemical compound OC1=C(F)C=C(Br)C=C1[N+]([O-])=O ACQVEWFMUBXEMR-UHFFFAOYSA-N 0.000 description 1
- UGVRJVHOJNYEHR-UHFFFAOYSA-N 4-chlorobenzophenone Chemical compound C1=CC(Cl)=CC=C1C(=O)C1=CC=CC=C1 UGVRJVHOJNYEHR-UHFFFAOYSA-N 0.000 description 1
- HMBNQNDUEFFFNZ-UHFFFAOYSA-N 4-ethenoxybutan-1-ol Chemical compound OCCCCOC=C HMBNQNDUEFFFNZ-UHFFFAOYSA-N 0.000 description 1
- SXIFAEWFOJETOA-UHFFFAOYSA-N 4-hydroxy-butyl Chemical group [CH2]CCCO SXIFAEWFOJETOA-UHFFFAOYSA-N 0.000 description 1
- QQGYZOYWNCKGEK-UHFFFAOYSA-N 5-[(1,3-dioxo-2-benzofuran-5-yl)oxy]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(OC=2C=C3C(=O)OC(C3=CC=2)=O)=C1 QQGYZOYWNCKGEK-UHFFFAOYSA-N 0.000 description 1
- FDWQGNULGGFFDP-UHFFFAOYSA-N 5-ethenyl-7-oxabicyclo[4.1.0]heptane Chemical compound C=CC1CCCC2OC12 FDWQGNULGGFFDP-UHFFFAOYSA-N 0.000 description 1
- XAYDWGMOPRHLEP-UHFFFAOYSA-N 6-ethenyl-7-oxabicyclo[4.1.0]heptane Chemical compound C1CCCC2OC21C=C XAYDWGMOPRHLEP-UHFFFAOYSA-N 0.000 description 1
- RBHIUNHSNSQJNG-UHFFFAOYSA-N 6-methyl-3-(2-methyloxiran-2-yl)-7-oxabicyclo[4.1.0]heptane Chemical compound C1CC2(C)OC2CC1C1(C)CO1 RBHIUNHSNSQJNG-UHFFFAOYSA-N 0.000 description 1
- CBDCJHXEZLXYSN-UHFFFAOYSA-N 7-(benzotriazol-2-yl)chromen-2-one Chemical compound N1=C2C=CC=CC2=NN1C1=CC=C2C=CC(=O)OC2=C1 CBDCJHXEZLXYSN-UHFFFAOYSA-N 0.000 description 1
- QXAMGWKESXGGNV-UHFFFAOYSA-N 7-(diethylamino)-1-benzopyran-2-one Chemical compound C1=CC(=O)OC2=CC(N(CC)CC)=CC=C21 QXAMGWKESXGGNV-UHFFFAOYSA-N 0.000 description 1
- BZGXVSAGPUNNHF-UHFFFAOYSA-N 7-(diethylamino)-3-(2-methoxybenzoyl)chromen-2-one Chemical compound O=C1OC2=CC(N(CC)CC)=CC=C2C=C1C(=O)C1=CC=CC=C1OC BZGXVSAGPUNNHF-UHFFFAOYSA-N 0.000 description 1
- ZZFQJJZCMZPXMI-UHFFFAOYSA-N 7-(diethylamino)-3-(furan-2-carbonyl)chromen-2-one Chemical compound O=C1OC2=CC(N(CC)CC)=CC=C2C=C1C(=O)C1=CC=CO1 ZZFQJJZCMZPXMI-UHFFFAOYSA-N 0.000 description 1
- UMPGSTJFSOVGTI-UHFFFAOYSA-N 7-(diethylamino)-3-[3-[4-(diethylamino)phenyl]prop-2-enoyl]chromen-2-one Chemical compound C1=CC(N(CC)CC)=CC=C1C=CC(=O)C1=CC2=CC=C(N(CC)CC)C=C2OC1=O UMPGSTJFSOVGTI-UHFFFAOYSA-N 0.000 description 1
- VPZOKYTXVDEFMM-UHFFFAOYSA-N 7-(diethylamino)-3-[4-(dimethylamino)benzoyl]chromen-2-one Chemical compound O=C1OC2=CC(N(CC)CC)=CC=C2C=C1C(=O)C1=CC=C(N(C)C)C=C1 VPZOKYTXVDEFMM-UHFFFAOYSA-N 0.000 description 1
- XDOLZJYETYVRKV-UHFFFAOYSA-N 7-Aminoheptanoic acid Chemical compound NCCCCCCC(O)=O XDOLZJYETYVRKV-UHFFFAOYSA-N 0.000 description 1
- YXALYBMHAYZKAP-UHFFFAOYSA-N 7-oxabicyclo[4.1.0]heptan-4-ylmethyl 7-oxabicyclo[4.1.0]heptane-4-carboxylate Chemical compound C1CC2OC2CC1C(=O)OCC1CC2OC2CC1 YXALYBMHAYZKAP-UHFFFAOYSA-N 0.000 description 1
- CAKHDJPNOKXIED-UHFFFAOYSA-N 7-oxabicyclo[4.1.0]heptan-5-ylmethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC1CCCC2OC12 CAKHDJPNOKXIED-UHFFFAOYSA-N 0.000 description 1
- ISRHJUURKPOCPC-UHFFFAOYSA-N 7-oxabicyclo[4.1.0]heptan-5-ylmethyl prop-2-enoate Chemical compound C=CC(=O)OCC1CCCC2OC12 ISRHJUURKPOCPC-UHFFFAOYSA-N 0.000 description 1
- LPEKGGXMPWTOCB-UHFFFAOYSA-N 8beta-(2,3-epoxy-2-methylbutyryloxy)-14-acetoxytithifolin Natural products COC(=O)C(C)O LPEKGGXMPWTOCB-UHFFFAOYSA-N 0.000 description 1
- YYVYAPXYZVYDHN-UHFFFAOYSA-N 9,10-phenanthroquinone Chemical compound C1=CC=C2C(=O)C(=O)C3=CC=CC=C3C2=C1 YYVYAPXYZVYDHN-UHFFFAOYSA-N 0.000 description 1
- MTRFEWTWIPAXLG-UHFFFAOYSA-N 9-phenylacridine Chemical compound C1=CC=CC=C1C1=C(C=CC=C2)C2=NC2=CC=CC=C12 MTRFEWTWIPAXLG-UHFFFAOYSA-N 0.000 description 1
- GDALETGZDYOOGB-UHFFFAOYSA-N Acridone Natural products C1=C(O)C=C2N(C)C3=CC=CC=C3C(=O)C2=C1O GDALETGZDYOOGB-UHFFFAOYSA-N 0.000 description 1
- 229920002126 Acrylic acid copolymer Polymers 0.000 description 1
- NLZUEZXRPGMBCV-UHFFFAOYSA-N Butylhydroxytoluene Chemical compound CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 NLZUEZXRPGMBCV-UHFFFAOYSA-N 0.000 description 1
- FOGPUYQJHBRRGZ-UHFFFAOYSA-N C(C=C)(=O)O.COC=CC Chemical compound C(C=C)(=O)O.COC=CC FOGPUYQJHBRRGZ-UHFFFAOYSA-N 0.000 description 1
- 125000003860 C1-C20 alkoxy group Chemical group 0.000 description 1
- DLIGYXZVOZWDRK-UHFFFAOYSA-N CC1=C(C=C)C=CC(=C1)C.C(=CCC)C1=CC=C(C=C)C=C1 Chemical compound CC1=C(C=C)C=CC(=C1)C.C(=CCC)C1=CC=C(C=C)C=C1 DLIGYXZVOZWDRK-UHFFFAOYSA-N 0.000 description 1
- RJLQWZFZOUUUHD-UHFFFAOYSA-N COC1=C(C(=O)C=2C(=C(C=CC=2)P(CC(CC(C)(C)C)C)=O)C(C2=C(C=CC=C2OC)OC)=O)C(=CC=C1)OC Chemical compound COC1=C(C(=O)C=2C(=C(C=CC=2)P(CC(CC(C)(C)C)C)=O)C(C2=C(C=CC=C2OC)OC)=O)C(=CC=C1)OC RJLQWZFZOUUUHD-UHFFFAOYSA-N 0.000 description 1
- 239000009261 D 400 Substances 0.000 description 1
- YXHKONLOYHBTNS-UHFFFAOYSA-N Diazomethane Chemical class C=[N+]=[N-] YXHKONLOYHBTNS-UHFFFAOYSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical class S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 1
- GXBYFVGCMPJVJX-UHFFFAOYSA-N Epoxybutene Chemical compound C=CC1CO1 GXBYFVGCMPJVJX-UHFFFAOYSA-N 0.000 description 1
- 239000004386 Erythritol Substances 0.000 description 1
- UNXHWFMMPAWVPI-UHFFFAOYSA-N Erythritol Natural products OCC(O)C(O)CO UNXHWFMMPAWVPI-UHFFFAOYSA-N 0.000 description 1
- XXRCUYVCPSWGCC-UHFFFAOYSA-N Ethyl pyruvate Chemical compound CCOC(=O)C(C)=O XXRCUYVCPSWGCC-UHFFFAOYSA-N 0.000 description 1
- FPVVYTCTZKCSOJ-UHFFFAOYSA-N Ethylene glycol distearate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OCCOC(=O)CCCCCCCCCCCCCCCCC FPVVYTCTZKCSOJ-UHFFFAOYSA-N 0.000 description 1
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
- ZGFPUTOTEJOSAY-UHFFFAOYSA-N FC1=C([Ti])C(F)=CC=C1N1C=CC=C1 Chemical compound FC1=C([Ti])C(F)=CC=C1N1C=CC=C1 ZGFPUTOTEJOSAY-UHFFFAOYSA-N 0.000 description 1
- VTLYFUHAOXGGBS-UHFFFAOYSA-N Fe3+ Chemical compound [Fe+3] VTLYFUHAOXGGBS-UHFFFAOYSA-N 0.000 description 1
- 235000000177 Indigofera tinctoria Nutrition 0.000 description 1
- 239000005909 Kieselgur Substances 0.000 description 1
- PDSNLYSELAIEBU-UHFFFAOYSA-N Longifolene Chemical compound C1CCC(C)(C)C2C3CCC2C1(C)C3=C PDSNLYSELAIEBU-UHFFFAOYSA-N 0.000 description 1
- ZPUKHRHPJKNORC-UHFFFAOYSA-N Longifolene Natural products CC1(C)CCCC2(C)C3CCC1(C3)C2=C ZPUKHRHPJKNORC-UHFFFAOYSA-N 0.000 description 1
- TUWJQNVAGYRRHA-UHFFFAOYSA-N Menadiol dibutyrate Chemical compound C1=CC=C2C(OC(=O)CCC)=CC(C)=C(OC(=O)CCC)C2=C1 TUWJQNVAGYRRHA-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- WRQNANDWMGAFTP-UHFFFAOYSA-N Methylacetoacetic acid Chemical compound COC(=O)CC(C)=O WRQNANDWMGAFTP-UHFFFAOYSA-N 0.000 description 1
- JLTDJTHDQAWBAV-UHFFFAOYSA-N N,N-dimethylaniline Chemical compound CN(C)C1=CC=CC=C1 JLTDJTHDQAWBAV-UHFFFAOYSA-N 0.000 description 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 1
- NPKSPKHJBVJUKB-UHFFFAOYSA-N N-phenylglycine Chemical compound OC(=O)CNC1=CC=CC=C1 NPKSPKHJBVJUKB-UHFFFAOYSA-N 0.000 description 1
- DIQMPQMYFZXDAX-UHFFFAOYSA-N Pentyl formate Chemical compound CCCCCOC=O DIQMPQMYFZXDAX-UHFFFAOYSA-N 0.000 description 1
- FQYUMYWMJTYZTK-UHFFFAOYSA-N Phenyl glycidyl ether Chemical compound C1OC1COC1=CC=CC=C1 FQYUMYWMJTYZTK-UHFFFAOYSA-N 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical group OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 229920002035 Pluronic® L 10 Polymers 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 239000004111 Potassium silicate Substances 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 1
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 1
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical compound N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 1
- MTCFGRXMJLQNBG-UHFFFAOYSA-N Serine Natural products OCC(N)C(O)=O MTCFGRXMJLQNBG-UHFFFAOYSA-N 0.000 description 1
- AWMVMTVKBNGEAK-UHFFFAOYSA-N Styrene oxide Chemical compound C1OC1C1=CC=CC=C1 AWMVMTVKBNGEAK-UHFFFAOYSA-N 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- 229920002359 Tetronic® Polymers 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- DPQRMIPRAHPPNE-UHFFFAOYSA-N [(1-oxo-1-phenylpropan-2-ylidene)amino] acetate Chemical compound CC(=O)ON=C(C)C(=O)C1=CC=CC=C1 DPQRMIPRAHPPNE-UHFFFAOYSA-N 0.000 description 1
- ZNZDJSGUWLGTLA-UHFFFAOYSA-N [(1-oxo-1-phenylpropan-2-ylidene)amino] benzoate Chemical compound C=1C=CC=CC=1C(=O)C(C)=NOC(=O)C1=CC=CC=C1 ZNZDJSGUWLGTLA-UHFFFAOYSA-N 0.000 description 1
- YMOONIIMQBGTDU-VOTSOKGWSA-N [(e)-2-bromoethenyl]benzene Chemical compound Br\C=C\C1=CC=CC=C1 YMOONIIMQBGTDU-VOTSOKGWSA-N 0.000 description 1
- BEUGBYXJXMVRFO-UHFFFAOYSA-N [4-(dimethylamino)phenyl]-phenylmethanone Chemical compound C1=CC(N(C)C)=CC=C1C(=O)C1=CC=CC=C1 BEUGBYXJXMVRFO-UHFFFAOYSA-N 0.000 description 1
- MZVQCMJNVPIDEA-UHFFFAOYSA-N [CH2]CN(CC)CC Chemical group [CH2]CN(CC)CC MZVQCMJNVPIDEA-UHFFFAOYSA-N 0.000 description 1
- GUCYFKSBFREPBC-UHFFFAOYSA-N [phenyl-(2,4,6-trimethylbenzoyl)phosphoryl]-(2,4,6-trimethylphenyl)methanone Chemical class CC1=CC(C)=CC(C)=C1C(=O)P(=O)(C=1C=CC=CC=1)C(=O)C1=C(C)C=C(C)C=C1C GUCYFKSBFREPBC-UHFFFAOYSA-N 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- FZEYVTFCMJSGMP-UHFFFAOYSA-N acridone Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3NC2=C1 FZEYVTFCMJSGMP-UHFFFAOYSA-N 0.000 description 1
- 150000003926 acrylamides Chemical class 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 239000004840 adhesive resin Substances 0.000 description 1
- 229920006223 adhesive resin Polymers 0.000 description 1
- WNLRTRBMVRJNCN-UHFFFAOYSA-L adipate(2-) Chemical compound [O-]C(=O)CCCCC([O-])=O WNLRTRBMVRJNCN-UHFFFAOYSA-L 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 125000004848 alkoxyethyl group Chemical group 0.000 description 1
- 125000004849 alkoxymethyl group Chemical group 0.000 description 1
- ZIXLDMFVRPABBX-UHFFFAOYSA-N alpha-methylcyclopentanone Natural products CC1CCCC1=O ZIXLDMFVRPABBX-UHFFFAOYSA-N 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 1
- 150000004056 anthraquinones Chemical class 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 150000008365 aromatic ketones Chemical class 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 125000005235 azinium group Chemical group 0.000 description 1
- 125000000751 azo group Chemical group [*]N=N[*] 0.000 description 1
- AYJRCSIUFZENHW-DEQYMQKBSA-L barium(2+);oxomethanediolate Chemical compound [Ba+2].[O-][14C]([O-])=O AYJRCSIUFZENHW-DEQYMQKBSA-L 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- KGQLBLGDIQNGSB-UHFFFAOYSA-N benzene-1,4-diol;methoxymethane Chemical compound COC.OC1=CC=C(O)C=C1 KGQLBLGDIQNGSB-UHFFFAOYSA-N 0.000 description 1
- JGFLAAWSLCPCDY-UHFFFAOYSA-N benzene;cyclopenta-1,3-diene;iron Chemical class [Fe].C1C=CC=C1.C1=CC=CC=C1 JGFLAAWSLCPCDY-UHFFFAOYSA-N 0.000 description 1
- 150000001555 benzenes Chemical group 0.000 description 1
- ZYGHJZDHTFUPRJ-UHFFFAOYSA-N benzo-alpha-pyrone Natural products C1=CC=C2OC(=O)C=CC2=C1 ZYGHJZDHTFUPRJ-UHFFFAOYSA-N 0.000 description 1
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical class C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 1
- 229940000635 beta-alanine Drugs 0.000 description 1
- RFVHVYKVRGKLNK-UHFFFAOYSA-N bis(4-methoxyphenyl)methanone Chemical compound C1=CC(OC)=CC=C1C(=O)C1=CC=C(OC)C=C1 RFVHVYKVRGKLNK-UHFFFAOYSA-N 0.000 description 1
- LMMDJMWIHPEQSJ-UHFFFAOYSA-N bis[(3-methyl-7-oxabicyclo[4.1.0]heptan-4-yl)methyl] hexanedioate Chemical compound C1C2OC2CC(C)C1COC(=O)CCCCC(=O)OCC1CC2OC2CC1C LMMDJMWIHPEQSJ-UHFFFAOYSA-N 0.000 description 1
- ARSWOISMYKDULL-UHFFFAOYSA-N bis[4-(2,2-dihydroxyethylamino)phenyl]methanone Chemical compound C1=CC(NCC(O)O)=CC=C1C(=O)C1=CC=C(NCC(O)O)C=C1 ARSWOISMYKDULL-UHFFFAOYSA-N 0.000 description 1
- VYHBFRJRBHMIQZ-UHFFFAOYSA-N bis[4-(diethylamino)phenyl]methanone Chemical compound C1=CC(N(CC)CC)=CC=C1C(=O)C1=CC=C(N(CC)CC)C=C1 VYHBFRJRBHMIQZ-UHFFFAOYSA-N 0.000 description 1
- BEWYHVAWEKZDPP-UHFFFAOYSA-N bornane Chemical compound C1CC2(C)CCC1C2(C)C BEWYHVAWEKZDPP-UHFFFAOYSA-N 0.000 description 1
- 229930006742 bornane Natural products 0.000 description 1
- 150000001642 boronic acid derivatives Chemical class 0.000 description 1
- 244000309464 bull Species 0.000 description 1
- MPMBRWOOISTHJV-UHFFFAOYSA-N but-1-enylbenzene Chemical compound CCC=CC1=CC=CC=C1 MPMBRWOOISTHJV-UHFFFAOYSA-N 0.000 description 1
- OBNCKNCVKJNDBV-UHFFFAOYSA-N butanoic acid ethyl ester Natural products CCCC(=O)OCC OBNCKNCVKJNDBV-UHFFFAOYSA-N 0.000 description 1
- 125000006226 butoxyethyl group Chemical group 0.000 description 1
- IWPATTDMSUYMJV-UHFFFAOYSA-N butyl 2-methoxyacetate Chemical compound CCCCOC(=O)COC IWPATTDMSUYMJV-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 235000010354 butylated hydroxytoluene Nutrition 0.000 description 1
- 229930188620 butyrolactone Natural products 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 125000000609 carbazolyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3NC12)* 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 150000001244 carboxylic acid anhydrides Chemical class 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000012986 chain transfer agent Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 125000006011 chloroethoxy group Chemical group 0.000 description 1
- BWRHOYDPVJPXMF-UHFFFAOYSA-N cis-Caran Natural products C1C(C)CCC2C(C)(C)C12 BWRHOYDPVJPXMF-UHFFFAOYSA-N 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 235000001671 coumarin Nutrition 0.000 description 1
- 150000001896 cresols Chemical class 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- LDHQCZJRKDOVOX-NSCUHMNNSA-N crotonic acid Chemical compound C\C=C\C(O)=O LDHQCZJRKDOVOX-NSCUHMNNSA-N 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- DNWBGZGLCKETOT-UHFFFAOYSA-N cyclohexane;1,3-dioxane Chemical compound C1CCCCC1.C1COCOC1 DNWBGZGLCKETOT-UHFFFAOYSA-N 0.000 description 1
- ZWAJLVLEBYIOTI-UHFFFAOYSA-N cyclohexene oxide Chemical compound C1CCCC2OC21 ZWAJLVLEBYIOTI-UHFFFAOYSA-N 0.000 description 1
- FWFSEYBSWVRWGL-UHFFFAOYSA-N cyclohexene oxide Natural products O=C1CCCC=C1 FWFSEYBSWVRWGL-UHFFFAOYSA-N 0.000 description 1
- OHHPZPDQZMUTCA-UHFFFAOYSA-N cyclohexyl 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)OC1CCCCC1 OHHPZPDQZMUTCA-UHFFFAOYSA-N 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- VSSAZBXXNIABDN-UHFFFAOYSA-N cyclohexylmethanol Chemical class OCC1CCCCC1 VSSAZBXXNIABDN-UHFFFAOYSA-N 0.000 description 1
- 229960002887 deanol Drugs 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- LSXWFXONGKSEMY-UHFFFAOYSA-N di-tert-butyl peroxide Chemical compound CC(C)(C)OOC(C)(C)C LSXWFXONGKSEMY-UHFFFAOYSA-N 0.000 description 1
- 125000004663 dialkyl amino group Chemical group 0.000 description 1
- GUJOJGAPFQRJSV-UHFFFAOYSA-N dialuminum;dioxosilane;oxygen(2-);hydrate Chemical compound O.[O-2].[O-2].[O-2].[Al+3].[Al+3].O=[Si]=O.O=[Si]=O.O=[Si]=O.O=[Si]=O GUJOJGAPFQRJSV-UHFFFAOYSA-N 0.000 description 1
- 125000003963 dichloro group Chemical group Cl* 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- OTARVPUIYXHRRB-UHFFFAOYSA-N diethoxy-methyl-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](C)(OCC)CCCOCC1CO1 OTARVPUIYXHRRB-UHFFFAOYSA-N 0.000 description 1
- 125000004177 diethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- IJKVHSBPTUYDLN-UHFFFAOYSA-N dihydroxy(oxo)silane Chemical compound O[Si](O)=O IJKVHSBPTUYDLN-UHFFFAOYSA-N 0.000 description 1
- 239000012972 dimethylethanolamine Substances 0.000 description 1
- PPSZHCXTGRHULJ-UHFFFAOYSA-N dioxazine Chemical compound O1ON=CC=C1 PPSZHCXTGRHULJ-UHFFFAOYSA-N 0.000 description 1
- PODOEQVNFJSWIK-UHFFFAOYSA-N diphenylphosphoryl-(2,4,6-trimethoxyphenyl)methanone Chemical compound COC1=CC(OC)=CC(OC)=C1C(=O)P(=O)(C=1C=CC=CC=1)C1=CC=CC=C1 PODOEQVNFJSWIK-UHFFFAOYSA-N 0.000 description 1
- WEHWNAOGRSTTBQ-UHFFFAOYSA-N dipropylamine Chemical compound CCCNCCC WEHWNAOGRSTTBQ-UHFFFAOYSA-N 0.000 description 1
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- PWWSSIYVTQUJQQ-UHFFFAOYSA-N distearyl thiodipropionate Chemical compound CCCCCCCCCCCCCCCCCCOC(=O)CCSCCC(=O)OCCCCCCCCCCCCCCCCCC PWWSSIYVTQUJQQ-UHFFFAOYSA-N 0.000 description 1
- 229940069096 dodecene Drugs 0.000 description 1
- ODQWQRRAPPTVAG-GZTJUZNOSA-N doxepin Chemical compound C1OC2=CC=CC=C2C(=C/CCN(C)C)/C2=CC=CC=C21 ODQWQRRAPPTVAG-GZTJUZNOSA-N 0.000 description 1
- 239000003480 eluent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- UNXHWFMMPAWVPI-ZXZARUISSA-N erythritol Chemical compound OC[C@H](O)[C@H](O)CO UNXHWFMMPAWVPI-ZXZARUISSA-N 0.000 description 1
- 229940009714 erythritol Drugs 0.000 description 1
- 235000019414 erythritol Nutrition 0.000 description 1
- AZDCYKCDXXPQIK-UHFFFAOYSA-N ethenoxymethylbenzene Chemical compound C=COCC1=CC=CC=C1 AZDCYKCDXXPQIK-UHFFFAOYSA-N 0.000 description 1
- BIUZXWXXSCLGNK-UHFFFAOYSA-N ethenoxymethylcyclohexane Chemical compound C=COCC1CCCCC1 BIUZXWXXSCLGNK-UHFFFAOYSA-N 0.000 description 1
- UIWXSTHGICQLQT-UHFFFAOYSA-N ethenyl propanoate Chemical compound CCC(=O)OC=C UIWXSTHGICQLQT-UHFFFAOYSA-N 0.000 description 1
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- CGWFVEFHQWJOKI-UHFFFAOYSA-N ethyl 2-benzoylbenzoate Chemical compound CCOC(=O)C1=CC=CC=C1C(=O)C1=CC=CC=C1 CGWFVEFHQWJOKI-UHFFFAOYSA-N 0.000 description 1
- WNIHNYUROPJCLW-UHFFFAOYSA-N ethyl 2-ethoxy-2-methylpropanoate Chemical compound CCOC(=O)C(C)(C)OCC WNIHNYUROPJCLW-UHFFFAOYSA-N 0.000 description 1
- CKSRFHWWBKRUKA-UHFFFAOYSA-N ethyl 2-ethoxyacetate Chemical compound CCOCC(=O)OCC CKSRFHWWBKRUKA-UHFFFAOYSA-N 0.000 description 1
- JLEKJZUYWFJPMB-UHFFFAOYSA-N ethyl 2-methoxyacetate Chemical compound CCOC(=O)COC JLEKJZUYWFJPMB-UHFFFAOYSA-N 0.000 description 1
- WHRLOJCOIKOQGL-UHFFFAOYSA-N ethyl 2-methoxypropanoate Chemical compound CCOC(=O)C(C)OC WHRLOJCOIKOQGL-UHFFFAOYSA-N 0.000 description 1
- FJAKCEHATXBFJT-UHFFFAOYSA-N ethyl 2-oxobutanoate Chemical compound CCOC(=O)C(=O)CC FJAKCEHATXBFJT-UHFFFAOYSA-N 0.000 description 1
- BHXIWUJLHYHGSJ-UHFFFAOYSA-N ethyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OCC BHXIWUJLHYHGSJ-UHFFFAOYSA-N 0.000 description 1
- IJUHLFUALMUWOM-UHFFFAOYSA-N ethyl 3-methoxypropanoate Chemical compound CCOC(=O)CCOC IJUHLFUALMUWOM-UHFFFAOYSA-N 0.000 description 1
- YDMWUMUNUXUYKT-UHFFFAOYSA-N ethyl [(1-oxo-1-phenylpropan-2-ylidene)amino] carbonate Chemical compound CCOC(=O)ON=C(C)C(=O)C1=CC=CC=C1 YDMWUMUNUXUYKT-UHFFFAOYSA-N 0.000 description 1
- XYIBRDXRRQCHLP-UHFFFAOYSA-N ethyl acetoacetate Chemical compound CCOC(=O)CC(C)=O XYIBRDXRRQCHLP-UHFFFAOYSA-N 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- 229940117360 ethyl pyruvate Drugs 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- YLQWCDOCJODRMT-UHFFFAOYSA-N fluoren-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3C2=C1 YLQWCDOCJODRMT-UHFFFAOYSA-N 0.000 description 1
- 229960003692 gamma aminobutyric acid Drugs 0.000 description 1
- 238000001879 gelation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 1
- 229940100608 glycol distearate Drugs 0.000 description 1
- 125000001188 haloalkyl group Chemical group 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- KWLMIXQRALPRBC-UHFFFAOYSA-L hectorite Chemical compound [Li+].[OH-].[OH-].[Na+].[Mg+2].O1[Si]2([O-])O[Si]1([O-])O[Si]([O-])(O1)O[Si]1([O-])O2 KWLMIXQRALPRBC-UHFFFAOYSA-L 0.000 description 1
- 229910000271 hectorite Inorganic materials 0.000 description 1
- XXMIOPMDWAUFGU-UHFFFAOYSA-N hexane-1,6-diol Chemical compound OCCCCCCO XXMIOPMDWAUFGU-UHFFFAOYSA-N 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229920001903 high density polyethylene Polymers 0.000 description 1
- 239000004700 high-density polyethylene Substances 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical class I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 125000002768 hydroxyalkyl group Chemical group 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229940097275 indigo Drugs 0.000 description 1
- COHYTHOBJLSHDF-UHFFFAOYSA-N indigo powder Natural products N1C2=CC=CC=C2C(=O)C1=C1C(=O)C2=CC=CC=C2N1 COHYTHOBJLSHDF-UHFFFAOYSA-N 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910001410 inorganic ion Inorganic materials 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000001023 inorganic pigment Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 125000002346 iodo group Chemical group I* 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229940117955 isoamyl acetate Drugs 0.000 description 1
- LDHQCZJRKDOVOX-IHWYPQMZSA-N isocrotonic acid Chemical compound C\C=C/C(O)=O LDHQCZJRKDOVOX-IHWYPQMZSA-N 0.000 description 1
- PXZQEOJJUGGUIB-UHFFFAOYSA-N isoindolin-1-one Chemical compound C1=CC=C2C(=O)NCC2=C1 PXZQEOJJUGGUIB-UHFFFAOYSA-N 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000011254 layer-forming composition Substances 0.000 description 1
- 229920001684 low density polyethylene Polymers 0.000 description 1
- 239000004702 low-density polyethylene Substances 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 125000005439 maleimidyl group Chemical group C1(C=CC(N1*)=O)=O 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 1
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- HRDXJKGNWSUIBT-UHFFFAOYSA-N methoxybenzene Chemical group [CH2]OC1=CC=CC=C1 HRDXJKGNWSUIBT-UHFFFAOYSA-N 0.000 description 1
- MPHUYCIKFIKENX-UHFFFAOYSA-N methyl 2-ethenylbenzoate Chemical compound COC(=O)C1=CC=CC=C1C=C MPHUYCIKFIKENX-UHFFFAOYSA-N 0.000 description 1
- PPFNAOBWGRMDLL-UHFFFAOYSA-N methyl 2-ethoxyacetate Chemical compound CCOCC(=O)OC PPFNAOBWGRMDLL-UHFFFAOYSA-N 0.000 description 1
- YVWPDYFVVMNWDT-UHFFFAOYSA-N methyl 2-ethoxypropanoate Chemical compound CCOC(C)C(=O)OC YVWPDYFVVMNWDT-UHFFFAOYSA-N 0.000 description 1
- XPIWVCAMONZQCP-UHFFFAOYSA-N methyl 2-oxobutanoate Chemical compound CCC(=O)C(=O)OC XPIWVCAMONZQCP-UHFFFAOYSA-N 0.000 description 1
- HSDFKDZBJMDHFF-UHFFFAOYSA-N methyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OC HSDFKDZBJMDHFF-UHFFFAOYSA-N 0.000 description 1
- BDJSOPWXYLFTNW-UHFFFAOYSA-N methyl 3-methoxypropanoate Chemical compound COCCC(=O)OC BDJSOPWXYLFTNW-UHFFFAOYSA-N 0.000 description 1
- 229940057867 methyl lactate Drugs 0.000 description 1
- CWKLZLBVOJRSOM-UHFFFAOYSA-N methyl pyruvate Chemical compound COC(=O)C(C)=O CWKLZLBVOJRSOM-UHFFFAOYSA-N 0.000 description 1
- XJRBAMWJDBPFIM-UHFFFAOYSA-N methyl vinyl ether Chemical compound COC=C XJRBAMWJDBPFIM-UHFFFAOYSA-N 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- 229910052901 montmorillonite Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- INJVFBCDVXYHGQ-UHFFFAOYSA-N n'-(3-triethoxysilylpropyl)ethane-1,2-diamine Chemical compound CCO[Si](OCC)(OCC)CCCNCCN INJVFBCDVXYHGQ-UHFFFAOYSA-N 0.000 description 1
- PHQOGHDTIVQXHL-UHFFFAOYSA-N n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCN PHQOGHDTIVQXHL-UHFFFAOYSA-N 0.000 description 1
- MQWFLKHKWJMCEN-UHFFFAOYSA-N n'-[3-[dimethoxy(methyl)silyl]propyl]ethane-1,2-diamine Chemical compound CO[Si](C)(OC)CCCNCCN MQWFLKHKWJMCEN-UHFFFAOYSA-N 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N n-Octanol Natural products CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- GNVRJGIVDSQCOP-UHFFFAOYSA-N n-ethyl-n-methylethanamine Chemical compound CCN(C)CC GNVRJGIVDSQCOP-UHFFFAOYSA-N 0.000 description 1
- 125000005487 naphthalate group Chemical group 0.000 description 1
- 125000000018 nitroso group Chemical group N(=O)* 0.000 description 1
- UMRZSTCPUPJPOJ-KNVOCYPGSA-N norbornane Chemical compound C1C[C@H]2CC[C@@H]1C2 UMRZSTCPUPJPOJ-KNVOCYPGSA-N 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 230000000269 nucleophilic effect Effects 0.000 description 1
- SFBTTWXNCQVIEC-UHFFFAOYSA-N o-Vinylanisole Chemical compound COC1=CC=CC=C1C=C SFBTTWXNCQVIEC-UHFFFAOYSA-N 0.000 description 1
- NOUWNNABOUGTDQ-UHFFFAOYSA-N octane Chemical compound CCCCCCC[CH2+] NOUWNNABOUGTDQ-UHFFFAOYSA-N 0.000 description 1
- 229920002114 octoxynol-9 Polymers 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 125000005375 organosiloxane group Chemical group 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 125000005704 oxymethylene group Chemical group [H]C([H])([*:2])O[*:1] 0.000 description 1
- HDBWAWNLGGMZRQ-UHFFFAOYSA-N p-Vinylbiphenyl Chemical compound C1=CC(C=C)=CC=C1C1=CC=CC=C1 HDBWAWNLGGMZRQ-UHFFFAOYSA-N 0.000 description 1
- NWVVVBRKAWDGAB-UHFFFAOYSA-N p-methoxyphenol Chemical compound COC1=CC=C(O)C=C1 NWVVVBRKAWDGAB-UHFFFAOYSA-N 0.000 description 1
- JOXIMZWYDAKGHI-UHFFFAOYSA-N p-toluenesulfonic acid Substances CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 1
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- HVAMZGADVCBITI-UHFFFAOYSA-M pent-4-enoate Chemical compound [O-]C(=O)CCC=C HVAMZGADVCBITI-UHFFFAOYSA-M 0.000 description 1
- QSGNIZYSOOADSE-UHFFFAOYSA-N penta-1,4-dienylbenzene Chemical compound C=CCC=CC1=CC=CC=C1 QSGNIZYSOOADSE-UHFFFAOYSA-N 0.000 description 1
- GUVXZFRDPCKWEM-UHFFFAOYSA-N pentalene Chemical compound C1=CC2=CC=CC2=C1 GUVXZFRDPCKWEM-UHFFFAOYSA-N 0.000 description 1
- 239000013500 performance material Substances 0.000 description 1
- 239000002530 phenolic antioxidant Substances 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 229950000688 phenothiazine Drugs 0.000 description 1
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 1
- ABLZXFCXXLZCGV-UHFFFAOYSA-N phosphonic acid group Chemical group P(O)(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical class N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 229930006728 pinane Natural products 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920000259 polyoxyethylene lauryl ether Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229960003975 potassium Drugs 0.000 description 1
- 239000011736 potassium bicarbonate Substances 0.000 description 1
- 229910000028 potassium bicarbonate Inorganic materials 0.000 description 1
- 235000015497 potassium bicarbonate Nutrition 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 235000011181 potassium carbonates Nutrition 0.000 description 1
- TYJJADVDDVDEDZ-UHFFFAOYSA-M potassium hydrogencarbonate Chemical compound [K+].OC([O-])=O TYJJADVDDVDEDZ-UHFFFAOYSA-M 0.000 description 1
- 229940086066 potassium hydrogencarbonate Drugs 0.000 description 1
- 235000011118 potassium hydroxide Nutrition 0.000 description 1
- NNHHDJVEYQHLHG-UHFFFAOYSA-N potassium silicate Chemical compound [K+].[K+].[O-][Si]([O-])=O NNHHDJVEYQHLHG-UHFFFAOYSA-N 0.000 description 1
- 229910052913 potassium silicate Inorganic materials 0.000 description 1
- 235000019353 potassium silicate Nutrition 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- FZYDVDRIQZXXIW-UHFFFAOYSA-N propanoic acid;prop-2-enoic acid Chemical compound CCC(O)=O.OC(=O)C=C FZYDVDRIQZXXIW-UHFFFAOYSA-N 0.000 description 1
- CYIRLFJPTCUCJB-UHFFFAOYSA-N propyl 2-methoxypropanoate Chemical compound CCCOC(=O)C(C)OC CYIRLFJPTCUCJB-UHFFFAOYSA-N 0.000 description 1
- ILPVOWZUBFRIAX-UHFFFAOYSA-N propyl 2-oxopropanoate Chemical compound CCCOC(=O)C(C)=O ILPVOWZUBFRIAX-UHFFFAOYSA-N 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- IZMJMCDDWKSTTK-UHFFFAOYSA-N quinoline yellow Chemical compound C1=CC=CC2=NC(C3C(C4=CC=CC=C4C3=O)=O)=CC=C21 IZMJMCDDWKSTTK-UHFFFAOYSA-N 0.000 description 1
- 239000007870 radical polymerization initiator Substances 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910000275 saponite Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 1
- 235000017557 sodium bicarbonate Nutrition 0.000 description 1
- 235000017550 sodium carbonate Nutrition 0.000 description 1
- APSBXTVYXVQYAB-UHFFFAOYSA-M sodium docusate Chemical group [Na+].CCCCC(CC)COC(=O)CC(S([O-])(=O)=O)C(=O)OCC(CC)CCCC APSBXTVYXVQYAB-UHFFFAOYSA-M 0.000 description 1
- 235000011121 sodium hydroxide Nutrition 0.000 description 1
- 235000019795 sodium metasilicate Nutrition 0.000 description 1
- 235000019794 sodium silicate Nutrition 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 125000000547 substituted alkyl group Chemical group 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 229950000244 sulfanilic acid Drugs 0.000 description 1
- 125000000542 sulfonic acid group Chemical group 0.000 description 1
- YBBRCQOCSYXUOC-UHFFFAOYSA-N sulfuryl dichloride Chemical compound ClS(Cl)(=O)=O YBBRCQOCSYXUOC-UHFFFAOYSA-N 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- HPBNICVODIHXKB-UHFFFAOYSA-N tert-butyl 4-ethenylbenzoate Chemical compound CC(C)(C)OC(=O)C1=CC=C(C=C)C=C1 HPBNICVODIHXKB-UHFFFAOYSA-N 0.000 description 1
- LVEOKSIILWWVEO-UHFFFAOYSA-N tetradecyl 3-(3-oxo-3-tetradecoxypropyl)sulfanylpropanoate Chemical compound CCCCCCCCCCCCCCOC(=O)CCSCCC(=O)OCCCCCCCCCCCCCC LVEOKSIILWWVEO-UHFFFAOYSA-N 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 125000005000 thioaryl group Chemical group 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- DWWMSEANWMWMCB-UHFFFAOYSA-N tribromomethylsulfonylbenzene Chemical compound BrC(Br)(Br)S(=O)(=O)C1=CC=CC=C1 DWWMSEANWMWMCB-UHFFFAOYSA-N 0.000 description 1
- GQIUQDDJKHLHTB-UHFFFAOYSA-N trichloro(ethenyl)silane Chemical compound Cl[Si](Cl)(Cl)C=C GQIUQDDJKHLHTB-UHFFFAOYSA-N 0.000 description 1
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- 125000004953 trihalomethyl group Chemical group 0.000 description 1
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- 238000000870 ultraviolet spectroscopy Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- PXXNTAGJWPJAGM-UHFFFAOYSA-N vertaline Natural products C1C2C=3C=C(OC)C(OC)=CC=3OC(C=C3)=CC=C3CCC(=O)OC1CC1N2CCCC1 PXXNTAGJWPJAGM-UHFFFAOYSA-N 0.000 description 1
- KOZCZZVUFDCZGG-UHFFFAOYSA-N vinyl benzoate Chemical compound C=COC(=O)C1=CC=CC=C1 KOZCZZVUFDCZGG-UHFFFAOYSA-N 0.000 description 1
- 239000005050 vinyl trichlorosilane Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910000166 zirconium phosphate Inorganic materials 0.000 description 1
- LEHFSLREWWMLPU-UHFFFAOYSA-B zirconium(4+);tetraphosphate Chemical compound [Zr+4].[Zr+4].[Zr+4].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O LEHFSLREWWMLPU-UHFFFAOYSA-B 0.000 description 1
- INRGAWUQFOBNKL-UHFFFAOYSA-N {4-[(Vinyloxy)methyl]cyclohexyl}methanol Chemical compound OCC1CCC(COC=C)CC1 INRGAWUQFOBNKL-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1057—Polyimides containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain
- C08G73/106—Polyimides containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain containing silicon
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/12—Unsaturated polyimide precursors
- C08G73/128—Unsaturated polyimide precursors the unsaturated precursors containing heterocyclic moieties in the main chain
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J179/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09J161/00 - C09J177/00
- C09J179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C09J179/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J179/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09J161/00 - C09J177/00
- C09J179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C09J179/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C09J179/085—Unsaturated polyimide precursors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
- C09J5/02—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving pretreatment of the surfaces to be joined
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
- C09J5/06—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/031—Organic compounds not covered by group G03F7/029
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/037—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/085—Photosensitive compositions characterised by adhesion-promoting non-macromolecular additives
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/30—Structure, shape, material or disposition of the layer connectors prior to the connecting process of a plurality of layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/1302—Disposition
- H01L2224/13025—Disposition the bump connector being disposed on a via connection of the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
- H01L2224/16146—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked the bump connector connecting to a via connection in the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16235—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a via metallisation of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
- H01L2224/171—Disposition
- H01L2224/1718—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/17181—On opposite sides of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/273—Manufacturing methods by local deposition of the material of the layer connector
- H01L2224/2731—Manufacturing methods by local deposition of the material of the layer connector in liquid form
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
- H01L2224/2743—Manufacturing methods by blanket deposition of the material of the layer connector in solid form
- H01L2224/27436—Lamination of a preform, e.g. foil, sheet or layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/275—Manufacturing methods by chemical or physical modification of a pre-existing or pre-deposited material
- H01L2224/27515—Curing and solidification, e.g. of a photosensitive layer material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/276—Manufacturing methods by patterning a pre-deposited material
- H01L2224/2762—Manufacturing methods by patterning a pre-deposited material using masks
- H01L2224/27622—Photolithography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/2901—Shape
- H01L2224/29012—Shape in top view
- H01L2224/29013—Shape in top view being rectangular or square
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/2954—Coating
- H01L2224/2957—Single coating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/2954—Coating
- H01L2224/29599—Material
- H01L2224/2969—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83009—Pre-treatment of the layer connector or the bonding area
- H01L2224/8303—Reshaping the layer connector in the bonding apparatus, e.g. flattening the layer connector
- H01L2224/83031—Reshaping the layer connector in the bonding apparatus, e.g. flattening the layer connector by chemical means, e.g. etching, anodisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/83201—Compression bonding
- H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
- H01L2224/83862—Heat curing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/921—Connecting a surface with connectors of different types
- H01L2224/9212—Sequential connecting processes
- H01L2224/92122—Sequential connecting processes the first connecting process involving a bump connector
- H01L2224/92125—Sequential connecting processes the first connecting process involving a bump connector the second connecting process involving a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/0651—Wire or wire-like electrical connections from device to substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06517—Bump or bump-like direct electrical connections from device to substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
- H01L2225/06565—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking the devices having the same size and there being no auxiliary carrier between the devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
- H01L2225/06568—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking the devices decreasing in size, e.g. pyramidical stack
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Materials For Photolithography (AREA)
- Wire Bonding (AREA)
- Polymerisation Methods In General (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
Abstract
【解決手段】酸基含有マレイミドに由来する繰り返し単位を含む重合体と、架橋剤と、光重合開始剤と、熱重合開始剤とを含む感光性樹脂組成物。重合体は、更に、ビニル化合物に由来する繰り返し単位を含むことが好ましい。
【選択図】なし
Description
また、電子機器の更なる小型化および高性能化のニーズに伴い、電子機器に搭載されるICチップについても更なる小型化および高集積化が求められている。
そのため、2.5次元実装デバイスや、3次元実装デバイスにおいても、半導体素子上の電極ピッチ、およびチップ間距離を狭めることが求められている。
しかしながら、後付けアンダーフィル封止方法の場合、電極ピッチの微細化や、半導体素子同士のチップ間距離を狭めるに伴い、アンダーフィルの充填が困難となる傾向にあり、接合の信頼性が低下する恐れがあった。
この際に、電極上のアンダーフィルが圧着時に周囲に押し出されたり、パターン露光・現像工程により電極上のアンダーフィルのみを取り除かれたりすることで、半導体素子の電極間の導通が確保される。
また、特許文献4には、アクリル樹脂を含むUV硬化性樹脂組成物が開示されている。
また、特許文献5には、カルボキシル基を有するポリイミド樹脂を含む感光性接着剤組成物を、アンダーフィルなどに用いることが開示されている。
また、特許文献6には、マレイミド基を有するマレイミドモノマーに由来するモノマー単位、および、単官能ビニルモノマーに由来するモノマー単位を含む共重合体であるアルカリ可溶性ポリマーと、熱硬化性樹脂と、放射線重合性化合物と、光開始剤とを含む半導体素子用感光性接着剤組成物が開示されている。
一方、特許文献4に記載のような、アクリル樹脂を用いる感光性樹脂組成物では、樹脂の耐熱性が低いため、電極接合時に発生する高温に耐えられず、接合の信頼性が低下することが分かった。
また、本発明者らが、特許文献6に開示された半導体素子用感光性接着剤組成物について検討したところ、硬化性が不十分であることが分かった。
よって、本発明の目的は、耐熱性、現像性および硬化性に優れた感光性樹脂組成物、かかる感光性樹脂組成物を用いた積層体、半導体デバイスの製造方法、および、半導体デバイスを提供することにある。
<1> 酸基含有マレイミドに由来する繰り返し単位を含む重合体と、架橋剤と、光重合開始剤と、熱重合開始剤とを含む感光性樹脂組成物。
<2> 重合体が、さらに、ビニル化合物に由来する繰り返し単位を含む、<1>に記載の感光性樹脂組成物。
<3> さらに溶剤を含む、<1>または<2>に記載の感光性樹脂組成物。
<4> 架橋剤が、エチレン性不飽和結合を有する基を2個以上有する化合物である、<1>〜<3>のいずれかに記載の感光性樹脂組成物。
<5> 架橋剤が、下記式で表される部分構造を有する、<1>〜<4>のいずれかに記載の感光性樹脂組成物;ただし、式中の*は連結手である。
<7> 重合体の酸価が50mgKOH/g以上である<1>〜<6>のいずれかに記載の感光性樹脂組成物。
<8> 重合体は、20℃/分で昇温したときの300℃における重量減少率が5%以下である、<1>〜<7>のいずれかに記載の感光性樹脂組成物。
<9> さらにフィラーを含む、<1>〜<8>のいずれかに記載の感光性樹脂組成物。
<10> さらに密着性付与剤を含む、<1>〜<9>のいずれかに記載の感光性樹脂組成物。
<11> アンダーフィル用である、<1>〜<10>のいずれかに記載の感光性樹脂組成物。
<12> 液状である、<1>〜<11>のいずれかに記載の感光性樹脂組成物。
<13> シート状である、<1>〜<11>のいずれかに記載の感光性樹脂組成物。
<14> 半導体ウエハの表面に、<1>〜<13>のいずれかに記載の感光性樹脂組成物からなる層を有する積層体。
<15> 半導体ウエハの表面に、<1>〜<13>のいずれかに記載の感光性樹脂組成物を硬化してなる硬化物層を有する積層体。
<16> <12>に記載の感光性樹脂組成物を半導体ウエハに適用する工程と、
半導体ウエハに適用された感光性樹脂組成物を乾燥させる工程と、
乾燥された感光性樹脂組成物を露光する工程と、
露光された感光性樹脂組成物を現像する工程と、
現像された感光性樹脂組成物の表面に、被着体を加熱圧着する工程と、
を含む半導体デバイスの製造方法。
<17> <13>に記載の感光性樹脂組成物を半導体ウエハに積層する工程と、
半導体ウエハに積層された感光性樹脂組成物を露光する工程と、
露光された感光性樹脂組成物を現像する工程と、
現像された感光性樹脂組成物の表面に、被着体を加熱圧着する工程と、
を含む半導体デバイスの製造方法。
<18> <16>または<17>に記載の方法で製造された半導体デバイス。
本発明の感光性樹脂組成物は、酸基含有マレイミドに由来する繰り返し単位を含む重合体と、架橋剤と、光重合開始剤と、熱重合開始剤とを含むことを特徴とする。
本発明の感光性樹脂組成物は、酸基含有マレイミドに由来する繰り返し単位を含む重合体を含むので、耐熱性に優れた硬化物を形成できる。また、マレイミドは酸基を含有しているので、現像性に優れたパターンを形成することができる。特に、マレイミドと酸基を同じ繰り返し単位に含む重合体とすることによって、耐熱性が向上する。また、光重合開始剤と熱重合開始剤とを含むので、重合性化合物の重合反応が効率よく進行し、硬化性に優れる。
以下本発明を詳細に説明する。
本発明の感光性樹脂組成物は、酸基含有マレイミドに由来する繰り返し単位を含む重合体(以下、マレイミド系重合体ともいう)を含有する。
本発明において用いられるマレイミド系重合体は、更に、ビニル化合物に由来する繰り返し単位を含有することが好ましい。なかでも、下記一般式(1)で表される繰り返し単位と、下記一般式(2)で表される繰り返し単位とを含む重合体が好ましい。
一般式(1)において、R2は、水素原子、アルキル基、アルコキシ基またはアリール基を表す。
アルキル基としては、炭素数1〜30のアルキル基が好ましく、炭素数1〜20のアルキル基が好ましい。アルキル基は、直鎖、分岐、環状のいずれでもよい。
アルコキシ基としては、炭素数1〜30のアルコキシ基が好ましく、炭素数1〜20のアルコキシ基が好ましい。アルコキシ基は、直鎖、分岐、環状のいずれでもよい。
アリール基は、炭素数6〜30のアリール基が好ましく、炭素数6〜20のアリール基がより好ましく、フェニル基が特に好ましい。
一般式(1)のR2は、水素原子またはフェニル基が好ましく、フェニル基が特に好ましい。R2を水素原子またはフェニル基とすることにより、耐熱性をより向上できる。特にフェニル基とすることにより耐熱性を特に向上できる。
例えば、2価の連結基としては、アルキレン基、アリーレン基、−O−、−NR’−(R’は、水素原子、置換基を有していてもよいアルキル基または置換基を有していてもよいアリール基を表し、水素原子が好ましい)で表される構造、−SO2−、−CO−、−O−および−S−から選ばれる少なくとも一つを含む基が挙げられる。
アルキレン基としては、炭素数2〜20のアルキレン基が好ましく、炭素数2〜10のアルキレン基がより好ましい。
アリーレン基としては、炭素数6〜30のアリーレン基が好ましく、炭素数6〜20のアリーレン基がより好ましい。
2価の連結基としては、フェニレン基が特に好ましい。
3価の連結基の例としては、2価の連結基の例として挙げた基のうち、1つの水素原子を取り除いた基が挙げられる。例えば、3置換のベンゼン環などが挙げられる。
他の繰り返し単位としては、例えば、不飽和カルボン酸(例えば、アクリル酸、メタクリル酸、イタコン酸、クロトン酸、イソクロトン酸、マレイン酸等)、不飽和カルボン酸とアルコール化合物とのエステル、不飽和カルボン酸とアミン化合物とのアミド、不飽和カルボン酸無水物等に由来する繰り返し単位が挙げられる。
全繰り返し単位中における、他の繰り返し単位の含有量は、10モル%以下が好ましく、5モル%以下がより好ましく、実質的に含有しないことが特に好ましい。実質的に含有しないとは、例えば、全繰り返し単位中における、他の繰り返し単位の含有量が1モル%以下であることが好ましく、0.5モル%以下であることがより好ましく、含有しないことが特に好ましい。
例えば、例えばビニル化合物と酸性基含有マレイミドをラジカル共重合させて得ることが出来る。すなわち、有機溶媒中、ビニル化合物と酸性基含有マレイミドを任意の割合で混合し、さらに、必要に応じてラジカル重合開始剤や連鎖移動剤などを添加して反応させて合成できる。
また、酸性基含有マレイミドは、例えば、無水マレイン酸と酸性基含有アミン化合物を用いてイミド化することで得ることが出来る。
別の合成法として、ビニル化合物と無水マレイン酸をラジカル共重合させた後、さらにアミン化合物を用いてイミド化することで得ることも出来る。このとき、必要に応じて塩基や酸、酸無水物などを添加して合成することも出来る。
α−オレフィンとしては、炭素数2〜30のα−オレフィンが好ましく、例えば、エチレン、プロピレン、1-ブテン、1−ヘキセン、1−オクテン、1−デセン、1−ドデセン、1−オクタデセンなどが挙げられる。中でもエチレンが好ましく用いられる。
芳香族ビニル化合物としては、スチレン、アルキルスチレン、アリールスチレン、ハロゲン化スチレン、アルコキシスチレン、ビニル安息香酸エステル等を挙げられる。中でもスチレンが好ましく用いられる。
アルキルスチレンの具体例としては、o−メチルスチレン、m−メチルスチレン、p−メチルスチレン、o−エチルスチレン、m−エチルスチレン、p−エチルスチレン、o−n−プロピルスチレン、m−n−プロピルスチレン、p−n−プロピルスチレン、o−イソプロピルスチレン、m−イソプロピルスチレン、p−イソプロピルスチレン、m−n−ブチルスチレン、p−n−ブチルスチレン、p−tert−ブチルスチレン、4−ブテニルスチレン、2,4−ジメチルスチレン、2,5−ジメチルスチレン、3,5−ジメチルスチレン、メシチルスチレン等が挙げられる。
アリールスチレンの具体例としては、p−フェニルスチレン等が挙げられる。
ハロゲン化スチレンの具体例としては、o−フルオロスチレン、m−フルオロスチレン、p−フルオロスチレン、o−クロロスチレン、m−クロロスチレン、p−クロロスチレン、o−ブロモスチレン、m−ブロモスチレン、p−ブロモスチレン、o−メチル−p−フルオロスチレン等が挙げられる。
アルコキシスチレンの具体例としては、o−メトキシスチレン、m−メトキシスチレン、p−メトキシスチレン等が挙げられる。
本発明の感光性樹脂組成物は、架橋剤を含有する。
架橋剤は、2個以上の重合性基を有する化合物であって、活性光線、放射線、光、熱、ラジカルまたは酸の作用により重合可能な公知の化合物を用いることができる。このような化合物は産業分野において広く知られているものであり、本発明においてはこれらを特に限定なく用いることができる。これらは、例えば、モノマー、プレポリマー、オリゴマー又はそれらの混合物並びにそれらの多量体などの化学的形態のいずれであってもよい。
なお、本発明における架橋剤は、上記したマレイミド系重合体とは異なる化合物である。すなわち、本発明の架橋剤は、酸基含有マレイミドに由来する繰り返し単位を含まない化合物である。
すなわち、本発明において、架橋剤は、エチレン性不飽和結合を有する基を有する化合物が好ましい。
また、本発明の感光性樹脂組成物は、重合性基としてエポキシ基を有する化合物を含有してもよいが、現像性および耐熱性をより向上できるという理由から、架橋剤100質量部中におけるエポキシ基を有する化合物の含有量は、10質量%以下が好ましく、5質量%以下が好ましく、実質的に含有しないことが特に好ましい。なお、実質的に含有しないとは、例えば、エポキシ基を有する化合物の含有量が1質量%以下が好ましく、0.5質量%以下がより好ましく、0.1質量%以下が特に好ましく、含有しないことが特に好ましい。
<<ラジカル重合性化合物(B1)>>
ラジカル重合性化合物(B1)としては、炭素数3〜35の(メタ)アクリルアミド化合物(B11)、炭素数4〜35の(メタ)アクリレート化合物(B12)、炭素数6〜35の芳香族ビニル化合物(B13)、炭素数3〜20のビニルエーテル化合物(B14)及びその他のラジカル重合性化合物(B15)等が挙げられる。ラジカル重合性化合物(B1)は1種を単独で用いても、2種以上を併用してもよい。また、必要により、ハイドロキノン、メチルエーテルハイドロキノン類等の重合禁止剤を併用してもよい。
イオン重合性化合物(B2)としては、炭素数3〜20のエポキシ化合物(B21)、炭素数4〜20のオキセタン化合物(B22)等が挙げられる。
また、架橋剤と上述したマレイミド系重合体との比率(質量比)は、(架橋剤/マレイミド系重合体)=90/10〜10/90であることが好ましく、20/80〜80/20であることがより好ましい。
架橋剤は、1種のみであってもよく、2種以上を併用してもよい。2種以上を併用する場合は、合計が上記含有量であることが好ましい。
本発明の感光性樹脂組成物は、重合性基を1個有する単官能重合性化合物を含有してもよい。重合性基としては、上述した架橋剤で説明した範囲と同義であり、好ましい範囲も同様である。
単官能重合性化合物としては、単官能(メタ)アクリレート、単官能(メタ)アクリルアミド、芳香族ビニル化合物、単官能ビニルエーテル、オキセタン環を1個有する化合物などが挙げられる。
単官能重合性化合物は、1種のみであってもよく、2種以上を併用してもよい。2種以上を併用する場合は、合計が上記含有量であることが好ましい。
本発明の感光性樹脂組成物は、光重合開始剤を含有する。
本発明の感光性樹脂組成物が光重合開始剤を含有することにより、感光性樹脂組成物を半導体ウエハなどに適用して層状の感光性樹脂組成物層を形成した後、光を照射することで、ラジカルまたは酸による硬化が起こり、光照射部における接着性を低下させることができる。光照射を、例えばフォトマスクを介して行えば、フォトマスクのパターンにしたがって、接着力の異なる領域を簡便に作成できるという利点がある。
また、光重合開始剤は、約300nm〜800nm(好ましくは330nm〜500nm)の範囲内に少なくとも約50の分子吸光係数を有する化合物を、少なくとも1種含有していることが好ましい。
ヒドロキシアセトフェノン系開始剤としては、IRGACURE−184、DAROCUR−1173、IRGACURE−500、IRGACURE−2959、IRGACURE−127(商品名:いずれもBASF社製)を用いることができる。アミノアセトフェノン系開始剤としては、市販品であるIRGACURE−907、IRGACURE−369、及び、IRGACURE−379(商品名:いずれもBASF社製)を用いることができる。アミノアセトフェノン系開始剤として、365nmまたは405nm等の長波光源に吸収波長がマッチングされた特開2009−191179公報に記載の化合物も用いることができる。また、アシルホスフィン系開始剤としては市販品であるIRGACURE−819やDAROCUR−TPO(商品名:いずれもBASF社製)を用いることができる。
市販品ではIRGACURE−OXE01(BASF社製)、IRGACURE−OXE02(BASF社製)、N−1919(ADEKA社製)も好適に用いられる。
また、オキシム化合物の特定部位に不飽和結合を有する特開2009−242469号公報に記載の化合物も、重合不活性ラジカルから活性ラジカルを再生することで高感度化を達成でき好適に使用することができる。
最も好ましくは、特開2007−269779号公報に示される特定置換基を有するオキシム化合物や、特開2009−191061号公報に示されるチオアリール基を有するオキシム化合物が挙げられる。
具体的には、特開2012−8223号公報の段落番号〔0073〕〜〔0095〕記載の酸発生剤を挙げることができる。
また、本発明の感光性樹脂組成物は、架橋剤100質量部に対し、光重合開始剤を0.1〜30質量部含有することが好ましく、0.2〜20質量部含有することがより好ましく、1〜20質量部含有することが更に好ましい。
光重合開始剤は、1種のみであってもよく、2種以上を併用してもよい。2種以上を併用する場合は、合計が上記含有量であることが好ましい。
本発明の感光性樹脂組成物は、熱重合開始剤を含有する。
本発明の感光性樹脂組成物が熱重合開始剤を含有することにより、感光性樹脂組成物を半導体ウエハなどに適用して層状の感光性樹脂組成物層を形成した後、被着体を接着し、加熱することにより、感光性樹脂組成物層がより強靭になり、被着体の機械的又は化学的な処理を施している時などに生じやすい感光性樹脂組成物層の凝集破壊を抑制できる。すなわち、感光性樹脂組成物層における接着性を向上できる。また、光重合開始剤と熱重合開始剤とを併用することで、硬化性を向上できる。
熱重合開始剤の分子量は、揮発性の観点から、100以上が好ましく、150以上がより好ましく、200以上がさらに好ましく、250以上が特に好ましい。上限は、例えば、1000以下が好ましく、500以下がより好ましい。熱重合開始剤の分子量が上記下限値以上であれば、塗膜の乾燥時における熱重合開始剤の揮散を効果的に抑制でき、硬化性が良好である。
熱ラジカル発生剤としては、公知の熱ラジカル発生剤を用いることができる。
熱ラジカル発生剤は、熱のエネルギーによってラジカルを発生し、架橋剤の重合反応を開始又は促進させる化合物である。
熱ラジカル発生剤としては、芳香族ケトン類、オニウム塩化合物、有機過酸化物、チオ化合物、ヘキサアリールビイミダゾール化合物、ケトオキシムエステル化合物、ボレート化合物、アジニウム化合物、メタロセン化合物、活性エステル化合物、炭素ハロゲン結合を有する化合物、アゾ系化合物等が挙げられる。中でも、有機過酸化物又はアゾ系化合物がより好ましく、有機過酸化物が特に好ましい。
具体的には、特開2008−63554号公報の段落0074〜0118に記載されている化合物が挙げられる。
また、市販品では、日油社のパークミルD、パークミルH、パークミルND、パークミルP、パーロイルIB、パーロイルIP、パーロイルL、パーロイルNPP、パーロイルSA、パーロイルSBP、パーロイルTCP,パーロイルOPP、パーロイル355、パーブチルD、パーブチルND、パーブチルNHP、パーブチルPV、パーブチルP、パーブチルZ、パーブチルO、パーヘキシルND、パーヘキシルO、パーヘキシルPV、パーオクタND、パーオクタO、ナイパーBMT、ナイパーBW、ナイパーPMB、パーヘキサHC、パーヘキサMC、パーヘキサTMH、パーヘキサV、パーヘキサ25B、パーヘキサ25O、パーヘキシン25B、パーメタンHなどが挙げられる。
熱酸発生剤としては、公知の熱酸発生剤を用いることができる。
熱酸発生剤としては、例えば、加熱によりスルホン酸、カルボン酸、ジスルホニルイミドなどの低求核性の酸を発生する化合物である。熱酸発生剤から発生する酸としては、pKaが2以下の酸が好ましい。
例えば、スルホン酸や電子求引基で置換されたアルキルカルボン酸、アリールカルボン酸、ジスルホニルイミドなどが好ましい。電子求引基としてはフッ素原子などのハロゲン原子、トリフルオロメチル基等のハロアルキル基、ニトロ基、シアノ基を挙げることができる。
熱酸発生剤としては、活性光線又は放射線の照射によって実質的に酸を発生せず、熱によって酸を発生するスルホン酸エステルを使用することが好ましい。活性光線又は放射線の照射によって実質的に酸を発生していないことは、化合物の露光前後での赤外線吸収(IR)スペクトル、核磁気共鳴(NMR)スペクトル測定により、スペクトルに変化がないことで判定することができる。
スルホン酸エステルの分子量は、230〜1,000が好ましく、230〜800がより好ましい。
スルホン酸エステルは、市販のものを用いてもよいし、公知の方法で合成したものを用いてもよい。スルホン酸エステルは、例えば、塩基性条件下、スルホニルクロリド又はスルホン酸無水物を対応する多価アルコールと反応させることにより合成することができる。市販品としては、p−トルエンスルホン酸シクロヘキシル(東京化成工業製)などが挙げられる。
また、本発明の感光性樹脂組成物は、光重合開始剤100質量部に対し、熱重合開始剤を1〜500質量部含有することが好ましく、10〜200質量部含有することがより好ましい。
また、本発明の感光性樹脂組成物は、架橋剤100質量部に対し、熱重合開始剤を0.1〜30質量部含有することが好ましく、0.2〜20質量部含有することがより好ましく、0.5〜20質量部含有することが更に好ましく、1〜20質量部含有することが特に好ましい。
熱重合開始剤は、1種のみであってもよく、2種以上を併用してもよい。2種以上を併用する場合は、合計が上記含有量であることが好ましい。
光重合開始剤と熱重合開始剤の組み合わせの比率は、質量比で、0.1〜10:1が好ましく、より好ましくは0.2〜5:1であり、更に好ましくは0.3〜3:1である。
本発明の感光性樹脂組成物は、溶剤を含有することができる。
溶剤は、公知のものを制限なく使用できる。有機溶剤としては、エステル類、エーテル類、ケトン類、アミド類、アルコール類、炭化水素などが挙げられる。
アミド類としては、例えば、N,N−ジメチルホルムアミド、N,N−ジメチルアセトアミド、N−メチル−2−ピロリドン等が挙げられる。
芳香族炭化水素としては、例えば、トルエン、キシレン、アニソール、メシチレン、等、が好適に挙げられる。
飽和脂肪族炭化水素としては、例えば、ヘキサン、ヘプタン、オクタン、ノナン、メチルオクタン、デカン、ウンデカン、ドデカン、トリデカン等の直鎖状の炭化水素、炭素数3から15の分岐状の炭化水素、p−メンタン、o−メンタン、m−メンタン、ジフェニルメンタン、1,4−テルピン、1,8−テルピン、ボルナン、ノルボルナン、ピナン、ツジャン、カラン、ロンギホレン等が挙げられる。
炭化水素としては、5員環及び6員環の組み合わせ、又は2つの6員環の組み合わせも挙げられる。5員環及び6員環を組み合わせた炭化水素としては、例えば、インデン、ペンタレン、インダン、テトラヒドロインデン等が挙げられ、2つの6員環を組み合わせた炭化水素としては、例えば、ナフタレン、テトラヒドロナフタリン(テトラリン)及びデカヒドロナフタリン(デカリン)等が挙げられる。
これらの溶剤は、塗布面状の改良などの観点から、2種以上を混合する形態も好ましい。
本発明の感光性樹脂組成物が溶剤を有する場合、溶剤は、感光性樹脂組成物の固形分濃度が5〜80質量%になるように使用されることが好ましい。
溶剤は1種類のみでもよいし、2種類以上であってもよい。溶剤が2種類以上の場合は、その合計が上記範囲であることが好ましい。
本発明の感光性樹脂組成物は、フィラーを含有することができる。
本発明においては、フィラーは、膜中で分子分散せず、固体の状態で分散するものであれば、特に限定はない。本発明に用いることができるフィラーとしては、有機フィラー及び無機フィラーが挙げられる。
有機顔料としては、公知のものが挙げられ、インジゴ系顔料、キナクリドン系顔料、ジオキサジン系顔料、イソインドリノン系顔料、キノフタロン系顔料、染付けレーキ顔料、アジン顔料、ニトロソ顔料、ニトロ顔料、天然顔料、蛍光顔料、カーボンブラック等が使用できる。また、無機顔料を含有していてもよい。
無機フィラーとしては、アルミナ、チタニア、ジルコニア、カオリン、焼成カオリン、タルク、ロウ石、ケイソウ土、炭酸ナトリウム、炭酸カルシウム、水酸化アルミニウム、水酸化マグネシウム、酸化亜鉛、リトポン、ケイ酸塩鉱物粒子(好ましくは非晶質シリカ、コロイダルシリカ、焼成石コウ、シリカ)、炭酸マグネシウム、酸化チタン、アルミナ、炭酸バリウム、硫酸バリウム、マイカ等が挙げられる。
フィラーの平均粒径(平均一次粒径)は、5nm以上20μm以下であることが好ましく、10nm以上10μm以下であることがより好ましく、50nm以上1μm以下であることが特に好ましい。上記範囲であると、膜中における分散安定性が良好であり、さらに膜面状や露光・現像後のパターン形状に優れる。
A(B,C)2〜5D4O10(OH,F,O)2 ・・・(1)
式(1)中、AはK、Na、Caのいずれかを表し、B及びCは、Fe(II)、Fe(III)、Mn、Al、Mg、Vのいずれかを表し、DはSi又はAlを表す。
例えば、層状のフィラーのうち、膨潤性合成雲母は、厚さが1〜50nm、面サイズが1〜20μm程度である。
フィラーは、1種のみであってもよく、2種以上を併用してもよい。2種以上を併用する場合は、合計が上記含有量であることが好ましい。
本発明の感光性樹脂組成物には、異種材料間の界面結合を良くするために、密着性付与剤を含有することもできる。密着性付与剤としては、例えば、シラン系カップリング剤、チタン系カップリング剤、アルミニウム系カップリング剤等が挙げられ、中でも効果が高い点で、シラン系カップリング剤(シランカップリング剤)が好ましい。密着性付与剤の含有量は、その効果や耐熱性及びコストの面から、感光性樹脂組成物の全固形分に対し、0.01〜20質量%が好ましく、0.1〜15質量%がより好ましい。
<<<シラン系カップリング剤>>>
本発明においては、シランカップリング剤とは、Si原子に、アルコキシ基またはハロゲン基が少なくとも1つ直接結合した官能基(以下、シランカップリング基ともいう)を、分子中に1つ以上有している化合物をいう。シランカップリング基は、Si原子にアルコキシ基またはハロゲン原子が2つ以上直接結合したものが好ましく、3つ以上直接結合したものが特に好ましい。
シランカップリング剤においては、Si原子に直接結合している官能基として、アルコキシ基及びハロゲン原子の少なくとも1つ以上の官能基を有し、化合物の取り扱いやすさの観点からは、アルコキシ基を有するものが好ましい。
アルコキシ基としては、反応性の観点から炭素数1〜30のアルコキシ基が好ましく、炭素数1〜15のアルコキシ基がより好ましく、炭素数1〜5のアルコキシ基が特に好ましい。
ハロゲン原子としては、F原子、Cl原子、Br原子、I原子が挙げられ、合成のしやすさ及び安定性の観点で、好ましくはCl原子及びBr原子が挙げられ、より好ましくはCl原子である。
本発明におけるシランカップリング剤は、密着性を良好に保つ観点で、シランカップリング基を分子内に1個以上10個以下含むことが好ましく、より好ましくは1個以上5個以下であり、特に好ましくは1個以上2個以下である。
以下、本発明に適用しうるシランカップリング剤の具体例としては、例えば、ビニルトリクロロシラン、ビニルトリメトキシシラン、ビニルトリエトキシシラン、β−(3,4エポキシシクロヘキシル)エチルトリメトキシシラン、γ−グリシドキシプロピルトリメトキシシラン、γ−グリシドキシプロピルメチルジエトキシシラン、γ−グリシドキシプロピルトリエトキシシラン、γ−メタクリロキシプロピルメチルジメトキシシラン、γ−メタクリロキシプロピルトリメトキシシラン、γ−メタクリロキシプロピルメチルジエトキシシラン、γ−メタクリロキシプロピルトリエトキシシラン、γ−アクリロキシプロピルトリメトキシシラン、N−(β−アミノエチル)−γ−アミノプロピルメチルジメトキシシラン、N−(β−アミノエチル)−γ−アミノプロピルトリメトキシシラン、N−(β−アミノエチル)−γ−アミノプロピルトリエトキシシラン、γ−アミノプロピルトリメトキシシラン、γ−アミノプロピルトリエトキシシラン、N−フェニル−γ−アミノプロピルトリメトキシシラン、γ−メルカプトプロピルトリメトキシシラン、γ−クロロプロピルトリメトキシシラン、γ−ウレイドプロピルトリエトキシシラン等を挙げることができる。
市販品としては、例えば、KBE−503(信越シリコーン製)などが挙げられる。
シランカップリング剤は1種のみを用いてもよく、2種以上を併用してもよい。
本発明の感光性樹脂組成物は、塗布性をより向上させる観点から、界面活性剤を含有してもよい。界面活性剤としては、フッ素系界面活性剤、ノニオン系界面活性剤、カチオン系界面活性剤、アニオン系界面活性剤、シリコーン系界面活性剤などの各種界面活性剤を使用できる。
即ち、フッ素系界面活性剤を含む感光性樹脂組成物を用いて膜形成する場合においては、被塗布面と塗布液との界面張力を低下させることにより、被塗布面への濡れ性が改善され、被塗布面への塗布性が向上する。このため、少量の液量で数μm程度の薄膜を形成した場合であっても、厚みムラの小さい均一厚の膜形成をより好適に行える点で有効である。
本発明の樹脂組成物が界面活性剤を有する場合、界面活性剤の添加量は、組成物の全固形分に対して、0.001質量%〜2.0質量%が好ましく、より好ましくは0.005質量%〜1.0質量%である。
界面活性剤は1種類のみでもよいし、2種類以上であってもよい。界面活性剤が2種類以上の場合は、その合計が上記範囲であることが好ましい。
本発明の感光性樹脂組成物は、加熱時の酸化による感光性樹脂組成物の低分子化やゲル化を防止する観点から、酸化防止剤を添加してもよい。酸化防止剤としては、フェノール系酸化防止剤、硫黄系酸化防止剤、キノン系酸化防止剤、アミン系酸化防止剤などが使用できる。
また、上記酸化防止剤のうち、フェノール系酸化防止剤と硫黄系酸化防止剤とを併用することがさらに好ましい。半導体加工において220℃といった高温の加工工程が30分以上の長時間行われており、単独の酸化防止剤ではその加工工程に対する耐久性が得られない。上記組み合わせを行うことで、高温加工工程においてフェノール系酸化防止剤が受けるダメージを硫黄系酸化防止剤が吸収し、30分以上の長時間の工程時間にも感光性樹脂組成物の変質を防ぐことが出来る。酸化防止剤の組み合わせとしては、「Irganox1010」と「Sumilizer TP−D」との組み合わせ、「Irganox1330」と「Sumilizer TP−D」との組み合わせ、および、「Sumilizer GA−80」と「Sumilizer TP−D」との組み合わせが好ましく、「Irganox1010」と「Sumilizer TP−D」との組み合わせ、「Irganox1330」と「Sumilizer TP−D」との組み合わせがより好ましく、「Irganox1010」と「Sumilizer TP−D」との組み合わせが特に好ましい。
酸化防止剤は1種類のみでもよいし、2種類以上であってもよい。酸化防止剤が2種類以上の場合は、その合計が上記範囲であることが好ましい。
本発明の感光性樹脂組成物は、イオン性不純物を吸着して、吸湿時の絶縁信頼性を良くするために、さらにイオン捕捉剤を含有することもできる。イオン捕捉剤としては、特に制限はなく、例えば、トリアジンチオール化合物、フェノール系還元剤等の銅がイオン化して溶け出すのを防止するための銅害防止剤として知られる化合物、粉末状のビスマス系、アンチモン系、マグネシウム系、アルミニウム系、ジルコニウム系、カルシウム系、チタン系、ズズ系及びこれらの混合系等の無機化合物が挙げられる。具体例としては、特に限定はしないが東亜合成(株)製の無機イオン捕捉剤、商品名、IXE−300(アンチモン系)、IXE−500(ビスマス系)、IXE−600(アンチモン、ビスマス混合系)、IXE−700(マグネシウム、アルミニウム混合系)、IXE−800(ジルコニウム系)、IXE−1100(カルシウム系)等がある。これらは単独あるいは2種以上混合して用いることができる。
イオン捕捉剤は1種類のみでもよいし、2種類以上であってもよい。イオン捕捉剤が2種類以上の場合は、その合計が上記範囲であることが好ましい。
本発明の感光性樹脂組成物は、上記各成分を混合して調製することができる。混合方法は特に限定はなく、従来公知の方法で行うことができる。
本発明の感光性樹脂組成物は、耐熱性および現像性に優れるので、半導体デバイスのアンダーフィルとして好ましく用いることができる。特に、3次元実装デバイスにおけるアンダーフィルなどに好ましく用いることができる。
本発明の感光性樹脂組成物の形態は、液状であってもよく、シート状であってもよい。
液状の感光性樹脂組成物の場合は、溶剤を含有することが好ましい。
シート状の感光性樹脂組成物は、例えば、以下に示す態様などが挙げられる。
以下、シート状の感光性樹脂組成物について、図面を用いて説明する。
図1は、シート状の感光性樹脂組成物の一実施形態を示す模式断面図である。図1に示すシート状の感光性樹脂組成物(フィルム状接着剤)1は、本発明の感光性樹脂組成物をフィルム状に成形してなるものである。
図2は、フィルム状接着剤を樹脂フィルムに積層してなる積層体(接着シート)の一実施形態を示す模式断面図である。図2に示す接着シート100は、樹脂フィルム3と、これの一方面上に設けられたフィルム状接着剤1からなる接着剤層とで構成される。
図3は、接着シートの他の一実施形態を示す模式断面図である。図3に示す接着シート110は、樹脂フィルム3と、これの一方面上に設けられたフィルム状接着剤1からなる接着剤層と、フィルム状接着剤1に積層されたカバーフィルム2とで構成される。
次に、本発明の積層体について説明する。
本発明の積層体は、半導体ウエハの表面に、本発明の感光性樹脂組成物からなる層を有するものである。この積層体は、接着層付半導体ウエハでもある。
また、本発明の積層体は、半導体ウエハの表面に、本発明の感光性樹脂組成物を硬化してなる硬化物層を有するものでもある。この積層体は、半導体デバイスである。
以下、図面を用いて、本発明の積層体について説明する。
また、接着層付半導体ウエハ20は、液状の感光性樹脂組成物を、半導体ウエハ8上に適用したあと、室温(25℃)〜200℃で加熱乾燥させることにより得ることもできる。感光性樹脂組成物の半導体ウエハ8への適用方法としては、スピニング、浸漬、ドクターブレード塗布、懸濁キャスティング(suspended casting)、塗布、噴霧、静電噴霧、リバースロール塗布などが挙げられる。
次に、本発明の半導体デバイスの製造方法について説明する。
<<半導体デバイスの製造方法の第一の実施形態>>
本発明の半導体デバイスの製造方法の第一の実施形態は、液状の感光性樹脂組成物を半導体ウエハに適用する工程と、半導体ウエハに適用された感光性樹脂組成物を乾燥させる工程と、乾燥された感光性樹脂組成物を露光する工程と、露光された感光性樹脂組成物を現像する工程と、現像された感光性樹脂組成物の表面に、被着体を加熱圧着する工程と、を含む。
感光性樹脂組成物の半導体ウエハへの適用方法としては、スピニング、浸漬、ドクターブレード塗布、懸濁キャスティング(suspended casting)、塗布、噴霧、静電噴霧、リバースロール塗布などが挙げられる。
露光する工程では、半導体ウエハに適用された感光性樹脂組成物に対して、所定のパターンの活性光線または放射線を照射する。この工程では、活性光線または放射線の照射により、架橋剤の重合反応が進行し、光照射部位における接着性が低下してマスクのパターンにしたがって、接着力の異なる領域が形成される。
活性光線または放射線の波長は、感光性樹脂組成物の組成により異なるが、200〜600nmが好ましく、300〜450nmがより好ましい。
光源としては、低圧水銀灯、高圧水銀灯、超高圧水銀灯、ケミカルランプ、LED光源、エキシマレーザー発生装置などを用いることができ、i線(365nm)、h線(405nm)、g線(436nm)などの波長300nm以上450nm以下の波長を有する活性光線が好ましく使用できる。また、必要に応じて長波長カットフィルター、短波長カットフィルター、バンドパスフィルターのような分光フィルターを通して照射光を調整することもできる。露光量は好ましくは1〜2000mJ/cm2である。
露光装置としては、ミラープロジェクションアライナー、ステッパー、スキャナー、プロキシミティ、コンタクト、マイクロレンズアレイ、レンズスキャナ、レーザー露光、など各種方式の露光機を用いることができる。
現像処理を行う工程では、感光性樹脂組成物の未露光の部分を、現像液を用いて現像する。現像液としては、水性アルカリ性現像液などを用いることができる。
現像処理を行った後、被着体を加熱圧着することにより半導体デバイスを製造できる。被着体としては、半導体素子などが挙げられる。
加熱圧着条件としては、加熱温度は、20〜250℃が好ましい。荷重は、0.01〜20kgfが好ましい。加熱時間は、0.1〜300秒間が好ましい。
被着体を加熱圧着することにより、感光性樹脂組成物が硬化して、半導体ウエハの表面に、本発明の感光性樹脂組成物を硬化してなる硬化物層を有する、本発明の積層体とすることができる。
本発明の半導体デバイスの製造方法の第二の実施形態は、シート状の感光性樹脂組成物を半導体ウエハに積層する工程と、半導体ウエハに積層された感光性樹脂組成物を露光する工程と、露光された感光性樹脂組成物を現像する工程と、現像された感光性樹脂組成物の表面に、被着体を加熱圧着する工程と、を含む。
シート状の感光性樹脂組成物の半導体ウエハへの積層は特に限定はなく、例えば、シート状の感光性樹脂組成物を、半導体ウエハを加熱しながら積層する方法などが挙げられる。加熱温度は特に限定はなく、25〜200℃が好ましい。また、加熱を行うことなくシート状の感光性樹脂組成物を積層してもよい。
露光する工程、現像する工程、被着体を加熱圧着する工程は、上述した第一の実施形態と同様にして行うことができる。
本発明の感光性樹脂組成物を、アンダーフィルとして用いた半導体デバイスについて、図面を用いて具体的に説明する。なお、近年は様々な構造の半導体デバイスが提案されており、本発明の感光性樹脂組成物のアンダーフィルとしての用途は、以下に説明する構造の半導体デバイスに限定されるものではない。
図13に示す半導体デバイス300は、いわゆる3次元実装デバイスであり、複数の半導体素子301a〜301dが積層した半導体素子積層体301が、半導体素子搭載用支持部材320に配置されている。
なお、この実施形態では、半導体素子の積層数が4層である場合を中心に説明するが、半導体素子の積層数は特に限定されるものではなく、例えば、2層、8層、16層、32層等であってもよい。また、1層であってもよい。
最上段の半導体素子301aは、貫通電極を有さず、その一方の面に電極パッド(図示せず)が形成されている。
半導体素子301b〜301dは、貫通電極302b〜302dを有し、各半導体素子の両面には、貫通電極に一体に設けられた接続パッド(図示せず)が設けられている。
すなわち、貫通電極を有さない半導体素子301aの電極パッドと、これに隣接する貫通電極302bを有する半導体素子301bの半導体素子301a側の接続パッドが、半田バンプ等の金属バンプ303aで接続され、貫通電極302bを有する半導体素子301bの他側の接続パッドが、それに隣接する貫通電極302cを有する半導体素子301cの半導体素子301b側の接続パッドと、半田バンプ等の金属バンプ303bで接続されている。同様に、貫通電極302cを有する半導体素子301cの他側の接続パッドが、それに隣接する貫通電極302dを有する半導体素子301dの半導体素子301c側の接続パッドと、半田バンプ等の金属バンプ303cで接続されている。
半導体素子搭載用支持部材320としては、例えば樹脂基板、セラミックス基板、ガラス基板等の絶縁基板を基材として用いた多層配線基板が使用される。樹脂基板を適用した半導体素子搭載用支持部材320としては、多層銅張積層板(多層プリント配線板)等が挙げられる。
半導体素子搭載用支持部材320と半導体素子積層体301との間には、再配線層305が形成された絶縁層315が配置されており、半導体素子搭載用支持部材320と半導体素子積層体301とは、再配線層305を介して電気的に接続されている。
すなわち、再配線層305の一端は、半田バンプ等の金属バンプ303dを介して、半導体素子301dの再配線層305側の面に形成された電極パッドに接続されている。また、再配線層305の他端は、半導体素子搭載用支持部材の表面電極320aと、半田バンプ等の金属バンプ303eを介して接続している。
そして、絶縁層315と半導体素子積層体301との間には、アンダーフィル層310aが形成されている。また、絶縁層315と半導体素子搭載用支持部材320との間には、アンダーフィル層310bが形成されている。アンダーフィル層310a、310bは、本発明の感光性樹脂組成物を用いて形成してなるものである。
下記記載の成分を混合し、液状の感光性樹脂組成物を調製した。
なお、実施例37においては、光重合開始剤の含有量を0.5質量部とした。また、実施例38においては、光重合開始剤の含有量を0.2質量部とした。また、実施例39においては、熱重合開始剤の含有量を0.2質量部とした。また、実施例40においては、光重合開始剤の含有量を0.1質量部とした。
<感光性樹脂組成物の組成>
(a)重合体:75質量部
(b)架橋剤:25質量部
(c)光重合開始剤:2質量部
(d)溶剤:160質量部
(e)熱重合開始剤:1質量部
(f)フィラー:10質量部
(g)密着性付与剤:5質量部
各重合体を、熱分析装置(TGA)(Q500、TA Instruments製)を用いて、窒素気流下、昇温速度20℃/minにて500℃まで昇温することで、300℃での重量減少率を求めた。
各感光性樹脂組成物を、乾燥後の膜厚が20μmとなるようにシリコンウエハ(4インチ径、厚さ525μm)上にスピンコートにて塗布し、140℃で5分間加熱した。次いで、平行露光機を用いて1000mJ/cm2(波長:365nm)で露光し、感光性樹脂組成物を硬化させた。熱分析装置(TGA)(Q500、TA Instruments製)を用いて、窒素気流下、昇温速度20℃/minにて500℃まで昇温することで、300℃での重量減少率を求めた。以下の基準で耐熱性を評価した。以下の基準で2〜5が実用的であり、3〜5が好ましく、4〜5が特に好ましい。
5:重量減少率が1%未満
4:重量減少率が1%以上5%未満
3:重量減少率が5%以上10%未満
2:重量減少率が10%以上15%未満
1:重量減少率が15%以上
各感光性樹脂組成物を、乾燥後の膜厚が20μmとなるようにシリコンウエハ(4インチ径、厚さ525μm)上にスピンコートにて塗布し、140℃で5分間加熱した。次いで、50μm径のドットが配置されたマスクを介して、平行露光機を用いて1000mJ/cm2(波長:365nm)で露光した。次いで、水酸化テトラメチルアンモニウム2.38重量%水溶液に1分間浸漬し、さらに水洗することで現像した。現像後のホールパターンを光学顕微鏡にて観察し、以下の基準で現像性を評価した。以下の基準で3〜5が実用的であり、4〜5が特に好ましい。
5:残膜無くホールパターンが得られた
4:残膜は50%未満存在するがホールパターンが得られた
3:残膜は50%以上存在するがホールパターンが得られた
2:パターンは形成されているがほとんど現像されていない
1:パターンが全く形成されていない
各感光性樹脂組成物を、乾燥後の膜厚が20μmとなるようにシリコンウエハ(4インチ径、厚さ525μm)上にスピンコートにて塗布し、140℃で5分間加熱した。次いで、平行露光機を用いて1000mJ/cm2(波長:365nm)で露光し、感光性樹脂組成物を半硬化させた。次いで、ホットプレート上で180℃に加熱して表面をスパチュラで擦り、跡が付かなくなるまでの時間を測定した。以下の基準で硬化性を評価した。以下の基準で2〜5が実用的であり、3〜5が好ましく、4〜5が特に好ましい。
5:5分以内に跡が付かなくなった
4:5分を超え10分以内に跡が付かなくなった
3:10分を超え15分以内に跡が付かなくなった
2:15分を超え20分以内に跡が付かなくなった
1:跡が付かなくなるまでに20分を超えた
一方、比較例1〜7の感光性樹脂組成物は、現像性、耐熱性および硬化性の少なくとも一つにおいて、実用レベルを満たさないものがあった。
a−1〜a−10、a−1−2〜a−1−6、p−1、p−3、p−4:合成例1〜18で得られたa−1〜a−10、a−1−2〜a−1−6、p−1、p−3、p−4
p−2:スチレン-フェニルマレイミド共重合体 ポリイミレックスPSX0371(日本触媒製) 下記構造
b−1:A−9300(新中村化学工業製) エチレン性不飽和化合物
b−2:A−TMPT(新中村化学工業製) エチレン性不飽和化合物
b−3:A−TMMT(新中村化学工業製) エチレン性不飽和化合物
b−4:AD−TMP(新中村化学工業製) エチレン性不飽和化合物
b−5:A−DPH(新中村化学工業製) エチレン性不飽和化合物
b−6:A−BPE−4(新中村化学工業製) エチレン性不飽和化合物
b−7:4G(新中村化学工業製) エチレン性不飽和化合物
b−8:BEO−60E(新日本理化製) エポキシ化合物
c−1:N−1919(ADEKA製)
c−2:IRGACURE−184(BASF社製)
c−3:IRGACURE−OXE01(BASF社製)
c−4:IRGACURE−OXE02(BASF社製)
GBL:γ-ブチロラクトン(和光純薬工業製)
e−1:パークミルD(日油製、熱ラジカル発生剤、分子量270.38、1分間半減期温度175.2℃)
e−2:パーブチルZ(日油製、熱ラジカル発生剤、分子量194.23、1分間半減期温度166.8℃)
e−3:パーヘキサV(日油製、熱ラジカル発生剤、分子量334.46、1分間半減期温度172.5℃)
e−4:パーブチルP(日油製、熱ラジカル発生剤、分子量338.49、1分間半減期温度175.4℃)
e−5:パーブチルD(日油製、熱ラジカル発生剤、分子量146.23、1分間半減期温度185.9℃)
e−6:パーヘキサ25B(日油製、熱ラジカル発生剤、分子量290.45、1分間半減期温度179.8℃)
e−7:パーヘキシン25B(日油製、熱ラジカル発生剤、分子量286.42、1分間半減期温度194.3℃)
e−8:パークミルP(日油製、熱ラジカル発生剤、分子量194.28、1分間半減期温度232.5℃)
e−9:パーメタンH(日油製、熱ラジカル発生剤、分子量172.27、1分間半減期温度199.5℃)
e−10:パーヘキサHC(日油製、熱ラジカル発生剤、分子量316.47、1分間半減期温度149.2℃)
e−11:パークミルH(日油製、熱ラジカル発生剤、分子量152.20、1分間半減期温度254.0℃)
e−12:p−トルエンスルホン酸シクロヘキシル(東京化成工業製、熱酸発生剤)
f−1:R−972(シリカ、日本アエロジル製)
f−2:AKP−50(アルミナ、住友化学製)
g−1:KBE−503(3−メタクリロキシプロピルトリエトキシシラン、信越シリコーン製)
1a:接着層パターン
2:カバーフィルム
3:樹脂フィルム
6:粘着剤層
7:樹脂フィルム
8:半導体ウエハ
11:接着層
11a:アンダーフィル層
12、12a、12b:半導体素子
13:半導体素子搭載用支持部材
14:ワイヤ
15:封止材
16:端子
20、20a、20b:接着層付半導体ウエハ
100、110、120:接着シート
200、210、300:半導体デバイス
301a〜301d:半導体素子
301:半導体素子積層体
302b〜302d:貫通電極
303a〜303e:金属バンプ
305:再配線層
310、310a、310b:アンダーフィル層
315:絶縁層
320:半導体素子搭載用支持部材
320a:表面電極
Claims (18)
- 酸基含有マレイミドに由来する繰り返し単位を含む重合体と、架橋剤と、光重合開始剤と、熱重合開始剤とを含む感光性樹脂組成物。
- 前記重合体が、さらに、ビニル化合物に由来する繰り返し単位を含む、請求項1に記載の感光性樹脂組成物。
- さらに溶剤を含む、請求項1または2に記載の感光性樹脂組成物。
- 前記架橋剤が、エチレン性不飽和結合を有する基を2個以上有する化合物である、請求項1〜3のいずれか1項に記載の感光性樹脂組成物。
- 前記重合体の酸価が50mgKOH/g以上である、請求項1〜6のいずれか1項に記載の感光性樹脂組成物。
- 前記重合体は、20℃/分で昇温したときの300℃における重量減少率が5%以下である、請求項1〜7のいずれか1項に記載の感光性樹脂組成物。
- さらにフィラーを含む、請求項1〜8のいずれか1項に記載の感光性樹脂組成物。
- さらに密着性付与剤を含む、請求項1〜9のいずれか1項に記載の感光性樹脂組成物。
- アンダーフィル用である、請求項1〜10のいずれか1項に記載の感光性樹脂組成物。
- 液状である、請求項1〜11のいずれか1項に記載の感光性樹脂組成物。
- シート状である、請求項1〜11のいずれか1項に記載の感光性樹脂組成物。
- 半導体ウエハの表面に、請求項1〜13のいずれか1項に記載の感光性樹脂組成物からなる層を有する積層体。
- 半導体ウエハの表面に、請求項1〜13のいずれか1項に記載の感光性樹脂組成物を硬化してなる硬化物層を有する積層体。
- 請求項12に記載の感光性樹脂組成物を半導体ウエハに適用する工程と、
半導体ウエハに適用された感光性樹脂組成物を乾燥させる工程と、
乾燥された感光性樹脂組成物を露光する工程と、
露光された感光性樹脂組成物を現像する工程と、
現像された感光性樹脂組成物の表面に、被着体を加熱圧着する工程と、
を含む半導体デバイスの製造方法。 - 請求項13に記載の感光性樹脂組成物を半導体ウエハに積層する工程と、
半導体ウエハに積層された感光性樹脂組成物を露光する工程と、
露光された感光性樹脂組成物を現像する工程と、
現像された感光性樹脂組成物の表面に、被着体を加熱圧着する工程と、
を含む半導体デバイスの製造方法。 - 請求項16または17に記載の方法で製造された半導体デバイス。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014069007A JP6234864B2 (ja) | 2014-03-28 | 2014-03-28 | 感光性樹脂組成物、積層体、半導体デバイスの製造方法、半導体デバイス |
PCT/JP2015/059047 WO2015147028A1 (ja) | 2014-03-28 | 2015-03-25 | 感光性樹脂組成物、積層体、半導体デバイスの製造方法、半導体デバイス |
US15/275,787 US20170012022A1 (en) | 2014-03-28 | 2016-09-26 | Photosensitive resin composition, laminate, method for manufacturing semiconductor device, and semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014069007A JP6234864B2 (ja) | 2014-03-28 | 2014-03-28 | 感光性樹脂組成物、積層体、半導体デバイスの製造方法、半導体デバイス |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015189883A true JP2015189883A (ja) | 2015-11-02 |
JP6234864B2 JP6234864B2 (ja) | 2017-11-22 |
Family
ID=54195540
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014069007A Active JP6234864B2 (ja) | 2014-03-28 | 2014-03-28 | 感光性樹脂組成物、積層体、半導体デバイスの製造方法、半導体デバイス |
Country Status (3)
Country | Link |
---|---|
US (1) | US20170012022A1 (ja) |
JP (1) | JP6234864B2 (ja) |
WO (1) | WO2015147028A1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20170061587A (ko) * | 2015-11-26 | 2017-06-05 | 제이에스알 가부시끼가이샤 | 감광성 수지 조성물, 레지스트 패턴의 형성 방법 및 금속 패턴의 제조 방법 |
JP2017102198A (ja) * | 2015-11-30 | 2017-06-08 | 富士フイルム株式会社 | 感光性組成物、硬化膜の製造方法、硬化膜、タッチパネル、及び、表示装置 |
WO2018030351A1 (ja) * | 2016-08-10 | 2018-02-15 | 日産化学工業株式会社 | インプリント材料 |
WO2020262588A1 (ja) * | 2019-06-28 | 2020-12-30 | 三菱瓦斯化学株式会社 | フィルム、積層体、フィルム層付き半導体ウェハ、フィルム層付き半導体搭載用基板、及び半導体装置 |
WO2023013678A1 (ja) * | 2021-08-06 | 2023-02-09 | 公立大学法人大阪 | 熱易解体性粘着性組成物又は熱分解性バインダー組成物 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11053382B2 (en) * | 2016-05-31 | 2021-07-06 | Mitsubishi Gas Chemical Company, Inc. | Resin composition, laminate, semiconductor wafer with resin composition layer, substrate for mounting semiconductor with resin composition layer, and semiconductor device |
US10297564B2 (en) * | 2017-10-05 | 2019-05-21 | Infineon Technologies Ag | Semiconductor die attach system and method |
TW202220154A (zh) * | 2020-11-02 | 2022-05-16 | 南韓商三星電子股份有限公司 | 半導體封裝 |
US11842982B2 (en) | 2020-11-02 | 2023-12-12 | Samsung Electronics Co., Ltd. | Semiconductor package with curing layer between semiconductor chips |
TWI810881B (zh) * | 2022-04-08 | 2023-08-01 | 新應材股份有限公司 | 感光性樹脂組成物以及硬化物 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003015288A (ja) * | 2001-06-28 | 2003-01-15 | Jsr Corp | カラー液晶表示装置用感放射線性組成物、およびカラーフィルタ |
JP2008230207A (ja) * | 2007-03-23 | 2008-10-02 | Fujifilm Corp | ネガ型平版印刷版原版及びそれを用いる平版印刷方法 |
JP2009242771A (ja) * | 2008-03-11 | 2009-10-22 | Hitachi Chem Co Ltd | 感光性接着剤組成物、接着シート、接着剤パターン、接着剤層付半導体ウェハ、並びに半導体装置及びその製造方法 |
JP2010024427A (ja) * | 2008-06-17 | 2010-02-04 | Hitachi Chem Co Ltd | 接着剤組成物、フィルム状接着剤、接着シート、接着剤層付半導体ウェハ、半導体装置及び半導体装置の製造方法 |
JP2012162676A (ja) * | 2011-02-08 | 2012-08-30 | Hitachi Chemical Co Ltd | 感光性接着剤組成物、接着剤パターン、接着剤層付半導体ウェハ、及び、半導体装置の製造方法。 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4464907B2 (ja) * | 2005-11-16 | 2010-05-19 | 株式会社日本触媒 | 感光性樹脂組成物 |
KR20110036749A (ko) * | 2008-08-27 | 2011-04-08 | 히다치 가세고교 가부시끼가이샤 | 감광성 접착제 조성물, 및 그것을 이용한 필름상 접착제, 접착 시트, 접착제 패턴, 접착제층 부착 반도체 웨이퍼 및 반도체 장치 |
KR20120082169A (ko) * | 2011-01-13 | 2012-07-23 | 삼성전자주식회사 | 알칼리 가용성의 에폭시 수지를 포함하는 감광성 접착제 조성물 및 이를 이용한 패턴 형성용 접착 필름 |
-
2014
- 2014-03-28 JP JP2014069007A patent/JP6234864B2/ja active Active
-
2015
- 2015-03-25 WO PCT/JP2015/059047 patent/WO2015147028A1/ja active Application Filing
-
2016
- 2016-09-26 US US15/275,787 patent/US20170012022A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003015288A (ja) * | 2001-06-28 | 2003-01-15 | Jsr Corp | カラー液晶表示装置用感放射線性組成物、およびカラーフィルタ |
JP2008230207A (ja) * | 2007-03-23 | 2008-10-02 | Fujifilm Corp | ネガ型平版印刷版原版及びそれを用いる平版印刷方法 |
JP2009242771A (ja) * | 2008-03-11 | 2009-10-22 | Hitachi Chem Co Ltd | 感光性接着剤組成物、接着シート、接着剤パターン、接着剤層付半導体ウェハ、並びに半導体装置及びその製造方法 |
JP2010024427A (ja) * | 2008-06-17 | 2010-02-04 | Hitachi Chem Co Ltd | 接着剤組成物、フィルム状接着剤、接着シート、接着剤層付半導体ウェハ、半導体装置及び半導体装置の製造方法 |
JP2012162676A (ja) * | 2011-02-08 | 2012-08-30 | Hitachi Chemical Co Ltd | 感光性接着剤組成物、接着剤パターン、接着剤層付半導体ウェハ、及び、半導体装置の製造方法。 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20170061587A (ko) * | 2015-11-26 | 2017-06-05 | 제이에스알 가부시끼가이샤 | 감광성 수지 조성물, 레지스트 패턴의 형성 방법 및 금속 패턴의 제조 방법 |
JP2017107171A (ja) * | 2015-11-26 | 2017-06-15 | Jsr株式会社 | 感光性樹脂組成物、レジストパターンの形成方法、および金属パターンの製造方法 |
KR102585663B1 (ko) * | 2015-11-26 | 2023-10-05 | 제이에스알 가부시끼가이샤 | 감광성 수지 조성물, 레지스트 패턴의 형성 방법 및 금속 패턴의 제조 방법 |
JP2017102198A (ja) * | 2015-11-30 | 2017-06-08 | 富士フイルム株式会社 | 感光性組成物、硬化膜の製造方法、硬化膜、タッチパネル、及び、表示装置 |
WO2018030351A1 (ja) * | 2016-08-10 | 2018-02-15 | 日産化学工業株式会社 | インプリント材料 |
CN109563194A (zh) * | 2016-08-10 | 2019-04-02 | 日产化学株式会社 | 压印材料 |
JPWO2018030351A1 (ja) * | 2016-08-10 | 2019-06-13 | 日産化学株式会社 | インプリント材料 |
CN109563194B (zh) * | 2016-08-10 | 2021-06-22 | 日产化学株式会社 | 压印材料 |
WO2020262588A1 (ja) * | 2019-06-28 | 2020-12-30 | 三菱瓦斯化学株式会社 | フィルム、積層体、フィルム層付き半導体ウェハ、フィルム層付き半導体搭載用基板、及び半導体装置 |
WO2023013678A1 (ja) * | 2021-08-06 | 2023-02-09 | 公立大学法人大阪 | 熱易解体性粘着性組成物又は熱分解性バインダー組成物 |
Also Published As
Publication number | Publication date |
---|---|
WO2015147028A1 (ja) | 2015-10-01 |
JP6234864B2 (ja) | 2017-11-22 |
US20170012022A1 (en) | 2017-01-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6234864B2 (ja) | 感光性樹脂組成物、積層体、半導体デバイスの製造方法、半導体デバイス | |
JP6212420B2 (ja) | 組成物、アンダーフィル用積層体、積層体、半導体デバイスの製造方法、および、半導体デバイス | |
JP6170672B2 (ja) | 半導体装置製造用仮接着剤、並びに、それを用いた接着性支持体、及び、半導体装置の製造方法 | |
US9716024B2 (en) | Temporary bonding laminates for used in manufacture of semiconductor devices | |
JP6140441B2 (ja) | 半導体装置製造用仮接着剤、並びに、それを用いた接着性支持体、及び、半導体装置の製造方法 | |
JP5975918B2 (ja) | 半導体装置製造用仮接合用積層体、および、半導体装置の製造方法 | |
JP6014455B2 (ja) | 半導体装置の製造方法 | |
JP6031264B2 (ja) | 半導体装置製造用仮接着剤、並びに、それを用いた接着性支持体、及び、半導体装置の製造方法 | |
WO2014157227A1 (ja) | 半導体装置製造用仮接合用積層体、および、半導体装置の製造方法 | |
KR101669829B1 (ko) | 반도체 장치 제조용 가접합층, 적층체, 및 반도체 장치의 제조 방법 | |
JP2014212292A (ja) | 半導体装置製造用仮接合層、積層体、及び、半導体装置の製造方法 | |
WO2013187190A1 (ja) | 半導体装置製造用仮接着剤、並びに、それを用いた接着性支持体、及び、半導体装置の製造方法 | |
TW201444938A (zh) | 半導體裝置製造用暫時接著劑、使用其之接著性支撐體、及半導體裝置之製造方法 | |
JP2014072452A (ja) | 半導体装置製造用仮接合層、積層体、及び、半導体装置の製造方法。 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20160309 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170404 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170518 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20171010 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20171025 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6234864 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |