WO2014024554A1 - 受光あるいは発光素子、太陽電池、光センサー、発光ダイオード及び面発光レーザ素子 - Google Patents
受光あるいは発光素子、太陽電池、光センサー、発光ダイオード及び面発光レーザ素子 Download PDFInfo
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- WO2014024554A1 WO2014024554A1 PCT/JP2013/065471 JP2013065471W WO2014024554A1 WO 2014024554 A1 WO2014024554 A1 WO 2014024554A1 JP 2013065471 W JP2013065471 W JP 2013065471W WO 2014024554 A1 WO2014024554 A1 WO 2014024554A1
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- layer
- transparent conductive
- conductive material
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- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Definitions
- the present disclosure relates to a light receiving or light emitting element, a solar cell, a light sensor, a light emitting diode, and a surface emitting laser element, and more specifically, a light receiving or light emitting element, a solar cell, a light sensor, a light emitting diode, and a surface emitting laser having features in electrodes. It relates to an element.
- a transparent conductive film having high conductivity and high transmittance in the visible light region is used for electrodes of solar cells and light receiving elements.
- a sintered body target for forming such a transparent conductive film based on a sputtering method is known from, for example, JP-A-2002-256423.
- This sintered body target for producing the transparent conductive film is composed of indium, molybdenum, and oxygen, and molybdenum is present at a ratio of 0.003 to 0.20 in terms of atomic ratio with respect to indium. Is 90% or more.
- a buffer layer made of at least one selected from a gallium oxide thin film, an oxide thin film made of gallium, indium and oxygen, and an oxide thin film made of gallium, indium, aluminum and oxygen is formed on the substrate.
- a transparent conductive layer made of an oxide thin film containing at least one element selected from niobium, tantalum, molybdenum, arsenic, antimony, and tungsten is formed on the buffer layer.
- a laminated body is known from JP2011-201301.
- an object of the present disclosure is to provide a light receiving or light emitting element, a solar cell, a photosensor, a light emitting diode, and a surface emitting laser element having an electrode having a low contact resistance value and a high light transmittance.
- the light receiving or light emitting element of the present disclosure is A light-receiving or light-emitting layer formed by laminating a plurality of compound semiconductor layers, and An electrode made of a transparent conductive material, having a first surface and a second surface facing the first surface, in contact with the light receiving or light emitting layer on the first surface; It has
- the transparent conductive material includes an additive composed of at least one metal selected from the group consisting of molybdenum, tungsten, chromium, ruthenium, titanium, nickel, zinc, iron and copper, or a compound thereof.
- the concentration of the additive contained in the transparent conductive material near the interface of the first surface of the electrode is higher than the concentration of the additive contained in the transparent conductive material near the second surface of the electrode.
- a solar cell or a photosensor of the present disclosure is provided.
- a light receiving layer formed by laminating a plurality of compound semiconductor layers, and
- An electrode made of a transparent conductive material, having a first surface and a second surface facing the first surface, in contact with the light receiving layer on the first surface; It has
- the transparent conductive material includes an additive composed of at least one metal selected from the group consisting of molybdenum, tungsten, chromium, ruthenium, titanium, nickel, zinc, iron and copper, or a compound thereof.
- the concentration of the additive contained in the transparent conductive material near the interface of the first surface of the electrode is higher than the concentration of the additive contained in the transparent conductive material near the second surface of the electrode.
- a light emitting diode or a surface emitting laser element of the present disclosure is provided.
- a light emitting layer formed by laminating a plurality of compound semiconductor layers, and
- An electrode made of a transparent conductive material, having a first surface and a second surface facing the first surface, in contact with the light emitting layer on the first surface; It has
- the transparent conductive material includes an additive composed of at least one metal selected from the group consisting of molybdenum, tungsten, chromium, ruthenium, titanium, nickel, zinc, iron and copper, or a compound thereof.
- the concentration of the additive contained in the transparent conductive material near the interface of the first surface of the electrode is higher than the concentration of the additive contained in the transparent conductive material near the second surface of the electrode.
- the transparent conductive material contains an additive, and the transparent in the vicinity of the interface of the first surface of the electrode. Since the concentration of the additive contained in the conductive material is higher than the concentration of the additive contained in the transparent conductive material in the vicinity of the second surface of the electrode, the electrode satisfies both a low contact resistance value and a high light transmittance. Can be provided.
- FIG. 1A and 1B are schematic cross-sectional views of a light receiving or light emitting element, a solar cell, and a photosensor of Example 1 and Example 2, respectively.
- FIG. 2 is a schematic cross-sectional view of the light receiving or light emitting element and solar cell of Example 3.
- 3A and 3B are schematic cross-sectional views of the light emitting diode and the surface emitting laser element of Example 4.
- FIG. 4 is a graph showing the results of secondary ion mass spectrometry in the thickness direction of the electrodes in Example 1.
- FIG. 5B are a graph showing results of measuring a current flowing when a voltage is applied to an electrode made of an ITO layer and an electrode made of an ITO layer containing molybdenum as an additive, and the ITO layer, and It is a graph which shows the result of having measured the light absorption rate of the ITO layer containing molybdenum as an additive.
- FIG. 6 is a graph showing the results of examining the relationship between the average light absorption rate and the thickness of an electrode made of an ITO layer and an electrode made of an ITO layer containing molybdenum as an additive.
- FIG. 7 shows the relationship between the carrier concentration of the n-GaAs layer and the contact resistance value between the first electrode and the light receiving or light emitting layer formed on the n-GaAs layer having various carrier concentrations. It is a graph which shows the result of having investigated.
- FIG. 8 shows the thickness of the first electrode and the first electrode exposed between the auxiliary electrode and the auxiliary electrode in the antireflection film having the laminated structure of zinc sulfide layer / magnesium fluoride layer in Example 3A. It is a graph which shows the result of having simulated the maximum conversion efficiency using the width of the part of two sides as a parameter.
- FIG. 9 shows the thickness of the first electrode and the second of the first electrode exposed between the auxiliary electrode in the antireflection film having the laminated structure of the tantalum oxide layer / silicon oxide layer in Example 3B. It is a graph which shows the result of having simulated the maximum conversion efficiency using the width of the part of a surface as a parameter.
- FIG. 10 shows the thickness of the first electrode and the first exposed between the auxiliary electrode and the auxiliary electrode in the antireflection film having a laminated structure of titanium oxide layer / tantalum oxide layer / silicon oxide layer in Example 3C. It is a graph which shows the result of having simulated the maximum conversion efficiency using the width
- 11A and 11B are schematic cross-sectional views of a conventional solar cell.
- Example 1 General description of the light receiving or light emitting element, solar cell, photosensor, light emitting diode, and surface emitting laser element of the present disclosure
- Example 1 (light reception or light emitting element of this indication, solar cell, and optical sensor) 3.
- Example 2 (Modification of Example 1) 4).
- Example 3 (Modification of Example 2) 5.
- Example 4 Light Emitting Diode and Surface Emitting Laser Element of the Present Disclosure 6).
- Example 5 modification of Examples 1 to 4), other
- a binary mixed crystal, ternary mixed crystal, or quaternary mixed crystal GaAs compound semiconductor a binary mixed crystal, a ternary mixed crystal, or a quaternary mixed crystal GaP type is used.
- ITO indium-tin composite oxide, Indium Tin Oxide, Sn-doped In 2 O 3 , crystalline ITO, and amorphous ITO is included as a transparent conductive material.
- IZO Indium Zinc Oxide
- AZO aluminum oxide-doped zinc oxide
- GZO gallium-doped zinc oxide
- AlMgZnO aluminum oxide and magnesium oxide-doped zinc oxide
- IGO Indium-gallium composite oxide
- IGO In-GaZnO 4
- IFO Indium-gallium composite oxide
- ATO antimony-doped SnO 2
- FTO F-doped SnO 2
- tin oxide SnO 2
- zinc oxide (ZnO), ZnO and B-doped, InSnZnO, or, IT O a an In 2 O 3 of Ti-doped
- IT O a an In 2 O 3 of Ti-doped
- an auxiliary electrode may be formed on the second surface of the electrode.
- a lattice shape cross-beam shape
- a plurality of branch auxiliary electrodes extend in parallel to each other, and one or both ends of the plurality of branch auxiliary electrodes are connected to each other.
- the shape which is present can be illustrated.
- a contact layer is formed between the light receiving or light emitting layer and the second surface of the electrode, and the contact layer includes a plurality of compound semiconductor layers constituting the light receiving or light emitting layer.
- the thickness of the contact layer includes 3 nm to 30 nm when the band gap energy of the material constituting the contact layer is smaller than the band gap energy of the light receiving layer or the light emitting layer.
- the thickness of the contact layer is not limited to the range of 3 nm to 30 nm.
- the carrier concentration of the contact layer is preferably 1 ⁇ 10 19 cm ⁇ 3 or more.
- the light-receiving or light-emitting layer has a stacked structure of an n-type compound semiconductor layer and a p-type compound semiconductor layer from the contact layer side, and the contact layer includes GaAs, GaInP, GaP, InP, A structure composed of InGaAs, InGaAsP, GaN, and InGaN can be used. These materials constituting the contact layer may be n-type or p-type.
- An example of an impurity contained in a contact layer made of n + -type GaAs or n + -type GaInP is tellurium (Te).
- the carrier concentration of the contact layer can be measured based on a method such as measurement using SIMS (secondary ion mass spectrometer), hole measurement, or CV measurement.
- the electrode has a laminated structure of a first layer and a second layer from the light receiving or light emitting layer side or the light receiving layer side or the light emitting layer side,
- the transparent conductive material constituting the first layer contains an additive
- the transparent conductive material constituting the second layer can be configured such that no additive is contained therein.
- the light receiving or light emitting element, solar cell, photosensor, light emitting diode, or surface emitting laser element of the present disclosure having such a configuration is referred to as “light receiving or light emitting element of the first configuration of the present disclosure” for convenience.
- the average concentration of the additive contained in the transparent conductive material constituting the first layer is Ic 1
- the average concentration of the additive contained in the transparent conductive material constituting the second layer is Ic 2
- 5 ⁇ Ic 1 / Ic 2 ⁇ 10 Is preferably satisfied.
- an additive is contained in the transparent conductive material can be evaluated using SIMS.
- the transparent conductive material contains an additive.
- the carrier concentration of one kind of metal specifically, for example, molybdenum
- the carrier concentration of one metal specifically, for example, molybdenum
- the transparent conductive material contains an additive. It can be judged that there is not.
- the average concentration of the additive contained in the transparent conductive material constituting the first layer is 5 ⁇ 10 16 cm ⁇ 3 to 1 ⁇ 10 18 cm ⁇ . 3.
- the electrical resistivity of the first layer is R 1 and the electrical resistivity of the second layer is R 2.
- the average light transmittance of the electrode is 95% or more, and the average electrical resistivity of the electrode is 2 ⁇ 10 ⁇ 6 ⁇ . ⁇ M (2 ⁇ 10 ⁇ 4 ⁇ ⁇ cm) or less, and the contact resistance value between the electrode and the light-receiving or light-emitting layer (or light-receiving layer or light-emitting layer) is particularly large in a concentrating solar cell. It is preferably 1 ⁇ 10 ⁇ 8 ⁇ ⁇ m 2 (1 ⁇ 10 ⁇ 4 ⁇ ⁇ cm 2 ) or less.
- the contact resistance value between the electrode and the light receiving or light emitting layer is 1 ⁇ 10 ⁇ 7 ⁇ ⁇ m 2 (1 ⁇ 10 ⁇ 3 ⁇ ⁇ cm 2 ) or less.
- the thickness of the first layer is T 1 and the thickness of the second layer is T 2 , 2 ⁇ T 2 / T 1 ⁇ 70 In this case, 3 ⁇ T 1 (nm) ⁇ 60 10 ⁇ T 2 (nm) ⁇ 350 It is more preferable to satisfy
- the average concentration of the additive contained in the transparent conductive material constituting the first layer can be measured using SIMS.
- the electrical resistivity of the first layer, the electrical resistivity of the second layer, and the average electrical resistivity of the electrode are, for example, by bonding the surface of the solar cell to a support substrate such as a glass substrate and the back side of the solar cell. After peeling, the remaining electrode layer can be measured based on methods such as hole measurement and measurement using a sheet resistance measuring device, and between the electrode and the light-receiving or light-emitting layer (or light-receiving layer or light-emitting layer).
- the contact resistance value is left only in the contact layer (for example, composed of an n-GaAs compound semiconductor layer).
- measurement can be performed based on a four-terminal measurement method.
- the light transmittance (light absorption rate) of the first layer, the light transmittance (light absorption rate) of the second layer, and the average light transmittance (light absorption rate) of the electrode are bonded to the glass substrate and transmitted. It can be measured using a reflectometer. Further, the thickness of the first layer and the thickness of the second layer can be measured based on a step meter, SEM or TEM electron microscope observation.
- the concentration of the additive contained in the transparent conductive material constituting the electrode can be gradually reduced from the first surface to the second surface of the electrode.
- the light receiving or light emitting element, solar cell, photosensor, light emitting diode or surface emitting laser element of the present disclosure having such a configuration is referred to as “light receiving or light emitting element of the second configuration of the present disclosure” for convenience.
- the concentration of the additive contained in the transparent conductive material can be measured using SIMS.
- An auxiliary electrode is formed on the second surface of the electrode, A contact layer is formed between the light receiving layer and the first surface of the electrode, An antireflection film may be formed on the exposed second surface of the electrode.
- the contact layer various rules described above in the light receiving or light emitting element can be applied.
- the material constituting the antireflection film a material having a refractive index smaller than that of the compound semiconductor constituting the uppermost compound semiconductor layer is preferably used.
- TiO 2 , Al 2 O 3 , ZnS, A layer composed of MgF 2 , Ta 2 O 5 , SiO 2 , Si 3 N 4 , or a laminated structure of these layers can be exemplified.
- PVD method physical vapor deposition
- sputtering is used.
- the width of the portion of the second surface of the electrode exposed between the auxiliary electrode is 145 ⁇ m to 285 ⁇ m
- the thickness of the electrode The thickness is 10 nm to 30 nm
- the antireflection film can have a stacked structure of a zinc sulfide layer having a thickness of 17 nm to 36 nm and a magnesium fluoride layer having a thickness of 85 nm to 93 nm.
- the width of the portion of the second surface of the electrode exposed between the auxiliary electrode and the auxiliary electrode is 145 ⁇ m to 285 ⁇ m
- the thickness of the electrode is 10 nm to 30 nm
- the antireflection film has a thickness of 18 nm to
- a stacked structure of a 32 nm tantalum oxide layer and a 71 nm to 76 nm thick silicon oxide layer can be employed.
- the width of the second surface portion of the electrode exposed between the auxiliary electrode and the auxiliary electrode is 145 ⁇ m to 285 ⁇ m
- the thickness of the electrode is 10 nm to 25 nm
- the antireflection film has a thickness of 7 nm to A stacked structure of a 15 nm titanium oxide layer, a 14 nm to 34 nm thick tantalum oxide layer, and a 81 nm to 86 nm thick silicon oxide layer can be employed.
- An auxiliary electrode is formed on the second surface of the electrode, A contact layer is formed between the light receiving layer and the first surface of the electrode, The portion of the second surface of the electrode exposed between the auxiliary electrode and the auxiliary electrode can be configured to be uneven.
- the concentration of the additive contained in the transparent conductive material in the vicinity of the interface of the first surface of the electrode is greater than the concentration of the additive in the transparent conductive material in the vicinity of the second surface of the electrode.
- the vicinity of the interface of the first surface of the electrode means a region occupying 10% of the thickness of the electrode from the first surface of the electrode toward the second surface of the electrode.
- the vicinity of the interface between the two surfaces means a region occupying 10% of the thickness of the electrode from the second surface of the electrode toward the first surface of the electrode.
- the additive concentration means the average concentration in these regions.
- Examples of the additive composed of a metal compound constituting the transparent conductive material include tungsten oxide, chromium oxide, ruthenium oxide, titanium oxide, molybdenum oxide, nickel oxide, zinc oxide, iron oxide, and copper oxide.
- the solar cell, the optical sensor, the light emitting diode, or the surface emitting laser element of the present disclosure, and the configuration and structure of the solar cell itself may be a known configuration and structure.
- the light-receiving or light-emitting layer formed by laminating a plurality of compound semiconductor layers, the formation of the light-receiving layer, the light-emitting layer, and the contact layer can be formed by, for example, metal organic chemical vapor deposition (MOCVD method, MOVPE method) or molecular beam epitaxy It can be carried out based on the method (MBE method), hydride vapor phase growth method in which halogen contributes to transport or reaction.
- MOCVD method metal organic chemical vapor deposition
- MOVPE method molecular beam epitaxy It can be carried out based on the method (MBE method), hydride vapor phase growth method in which halogen contributes to transport or reaction.
- the electrode described above can basically be formed based on a sputtering method.
- a target composed of a transparent conductive material referred to as a “transparent conductive material target”
- a target composed of an additive referred to as “additive target”.
- Sputtering may be performed to form a transparent conductive material containing an object.
- the formation of the first electrode is not limited to such a method.
- the auxiliary electrodes formed on the second surface of the electrode are, for example, AuGe layer / Ni layer / Au layer, Mo layer / Ti layer / Pt layer / Au layer, Ti layer / Pt layer / Au layer, Ni layer / Au
- it can be formed based on a PVD method such as a sputtering method or a vacuum evaporation method. Note that the layer described at the top of “/” occupies the first electrode side.
- the second surface of the first electrode containing fine particles may be etched.
- the light receiving or light emitting element of the present disclosure including the preferred form and configuration described above is provided on a support substrate.
- the substrate for film formation and the support substrate used at the time of manufacturing the light receiving or light emitting element of the present disclosure may be the same substrate or different substrates.
- a substrate in the case where the film formation substrate and the support substrate are the same substrate is referred to as a “film formation / support substrate” for convenience.
- films formation substrate and the support substrate are different from each other, they are referred to as “film formation substrate” and “support substrate”.
- the film-forming substrate may be removed from the light receiving or light emitting element or the like of the present disclosure, and the light receiving or light emitting element or the like of the present disclosure may be fixed to the supporting substrate or bonded together.
- Examples of a method for removing the film-forming substrate from the light receiving or light emitting element of the present disclosure include a laser ablation method, a heating method, and an etching method.
- a method for fixing or bonding the light receiving or light emitting element or the like of the present disclosure to a support substrate a metal bonding method, a semiconductor bonding method, or a metal / semiconductor bonding method may be used in addition to a method using an adhesive. it can.
- the deposition substrate examples include a substrate made of a group III-V semiconductor or a group II-VI semiconductor.
- a substrate made of a group III-V semiconductor or a group II-VI semiconductor Specifically, GaAs, InP, GaN, AlN, etc. can be mentioned as the substrate made of III-V semiconductor, and CdS, CdTe, ZnSe, ZnS, etc. are mentioned as the substrate made of II-VI semiconductor. be able to.
- a Si substrate or a sapphire substrate can be used.
- a substrate made of a group I-III-VI semiconductor called a chalcopyrite system made of Cu, In, Ga, Al, Se, S or the like can also be used.
- Cu (In, Ga) (Se, S) 2 abbreviated as CIGSS
- CuInS 2 abbreviated as CIS, and the like can be given.
- transparent inorganic substrates such as glass substrates and quartz substrates
- polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN); polycarbonate (PC) resins; Ethersulfone (PES) resin; Polyolefin resin such as polystyrene, polyethylene, polypropylene, etc .
- Polyphenylene sulfide resin Polyvinylidene fluoride resin; Tetraacetyl cellulose resin; Brominated phenoxy resin; Aramid resin; Polyimide resin; Polystyrene resin; Acrylic resin; Epoxy resin; Fluororesin; Silicone resin; Diacetate resin; Triacetate resin; Polyvinyl chloride resin; Click substrate or a film can be mentioned.
- the glass substrate include a soda glass substrate, a heat resistant glass substrate, and a quartz glass substrate.
- a second electrode is provided in addition to the first electrode described above.
- the second electrode is formed in contact with the compound semiconductor layer, or, alternatively, the film forming / supporting substrate, the support substrate itself, depending on the material constituting the film forming / supporting substrate and the support substrate. Can be used as the second electrode, or the second electrode may be formed in contact with the film forming / supporting substrate or the supporting substrate.
- Mo molybdenum
- tungsten W
- tantalum Ta
- vanadium V
- palladium Pd
- zinc Zn
- nickel Ni
- titanium Ti
- platinum examples thereof include (Pt) gold-zinc (Au-Zn), gold-germanium (AuGe), chromium (Cr), gold (Au), and aluminum (Al).
- Example 1 relates to the light receiving or light emitting element, the solar cell, and the optical sensor of the present disclosure, and further relates to the light receiving or light emitting element of the first configuration of the present disclosure.
- the light receiving or light emitting element, solar cell or photosensor 11 of Example 1 is (A) a light receiving or light emitting layer (light receiving layer) 21 formed by laminating a plurality of compound semiconductor layers, and (B) A first surface 30A and a second surface 30B opposite to the first surface 30A.
- the first surface 30A is in contact with the light-receiving or light-emitting layer (light-receiving layer) 21 and is an electrode made of a transparent conductive material (hereinafter referred to as a transparent conductive material). For convenience, it is called “first electrode 30”), It has.
- the solar cell 11 of Example 1 is a non-condensing solar cell.
- the light-receiving or light-emitting layer (light-receiving layer) 21 is formed on a substrate 20 made of a p-type GaAs substrate.
- the first compound semiconductor layer 22 made of p-GaAs and n-GaAs. It is comprised from the 2nd compound semiconductor layer 23 which consists of.
- a surface electric field (Front-Surface-Field, FSF) layer 24 made of n-AlInP is formed.
- a second electrode 25 made of Ti / Pt / Au is formed on the lower surface of the substrate 20 based on a PVD method such as a vacuum evaporation method or a sputtering method.
- the solar cell 11 of Example 1 and the configuration and structure of the solar cell 11 are known configurations and structures. Terminal portions (not shown) for taking out electric power to the outside are provided in regions (not shown) of the first electrode 30 and the second electrode 25. The same applies to the embodiments described below.
- the transparent conductive material is composed of a Group 6 transition metal such as molybdenum, tungsten, and chromium, and ruthenium, titanium, nickel, zinc, iron, and copper.
- An additive composed of at least one metal selected from the group or a compound thereof (specifically, molybdenum, Mo in each embodiment) is included, and is in the vicinity of the interface of the first surface 30A of the first electrode 30
- the concentration of the additive contained in the transparent conductive material at is higher than the concentration of the additive contained in the transparent conductive material in the vicinity of the second surface 30B of the first electrode 30.
- the compound semiconductor constituting the compound semiconductor layer was a GaAs compound semiconductor, and the transparent conductive material was ITO.
- the first electrode 30 has a laminated structure of the first layer 31 and the second layer 32 from the light receiving or light emitting layer side, and an additive is added to the transparent conductive material constituting the first layer 31.
- the transparent conductive material constituting the second layer 32 contains no additive.
- the average concentration Ic 1 of the additive contained in the transparent conductive material constituting the first layer 31 and the average concentration Ic 2 of the additive contained in the transparent conductive material constituting the second layer 32 are as follows: It is as Table 1.
- the first layer has an electric resistivity of R 1 and an electric resistivity of the second layer is R 2 .
- the light transmittance is TP 1
- the light transmittance of the second layer is TP 2
- the thickness of the first layer is T 1
- the thickness of the second layer is T 2
- these values are as shown in Table 1. It is.
- the average light transmittance of the first electrode 30, the average electrical resistivity of the first electrode 30, and the contact resistance value between the first electrode 30 and the light receiving or light emitting layer 21 are as shown in Table 1 below.
- the value of the average light absorption rate of the first electrode is an average value at a measurement wavelength of 400 nm to 900 nm, and the first electrode (the thickness of the first layer is 5 nm, the thickness of the second layer is 25 nm) on the glass substrate. It is a value obtained by forming and measuring, and excluding the light absorption rate of the glass substrate.
- Example 1 secondary ion mass spectrometry (SIMS) in the thickness direction of the first electrode 30 was performed.
- the results are shown in FIG. 4, where the horizontal axis of FIG. 4 is the thickness (unit: nm) of the first electrode 30, 0 nm means the top surface of the second layer 32, and 30 nm is the first It means the interface between the layer 31 and the surface electric field layer 24.
- the numerical values shown on the right hand side of the analysis results for indium, tin, and molybdenum are the average concentration values in the first layer 31, and the numerical values shown on the left hand side are the average concentration values in the second layer 32. Focusing on the concentration of molybdenum, a clear concentration difference is generated between the first layer 31 and the second layer 32.
- FIG. 5A “A” is a measurement result for an electrode made of an ITO layer containing molybdenum as an additive, and “B” is a measurement result for an electrode made of a laminated structure.
- the contact resistance value between the first layer and the second layer of the first electrode was about 10 ⁇ 7 ⁇ ⁇ cm 2 (about 10 ⁇ 11 ⁇ ⁇ m 2 ).
- an ITO layer (thickness 65 nm) and an ITO layer containing molybdenum as an additive are formed on the glass substrate, The light absorption rate of these layers was measured. The result is shown in FIG. 5B.
- FIG. 5B In FIG.
- A is a measurement result for an electrode made of an ITO layer containing molybdenum as an additive
- B is a measurement result for an electrode made of an ITO layer.
- the first electrode 30 is formed on the n-GaAs layer having various carrier concentrations, and the relationship between the carrier concentration of the n-GaAs layer and the contact resistance value between the first electrode and the light receiving or emitting layer. I investigated. The result is shown in FIG. 7, and the contact resistance value decreases as the carrier concentration increases.
- the first electrode composed of the first layer and the second layer was formed using AZO (aluminum oxide-doped zinc oxide) instead of ITO.
- AZO aluminum oxide-doped zinc oxide
- Table 3 shows the measurement results of the contact resistance values (unit: ⁇ ⁇ cm 2 ) between the first electrode using ITO and the first electrode using AZO with the various compound semiconductor layers.
- values in parentheses are carrier concentrations (unit: cm ⁇ 3 ). It can be seen that tellurium (Te) is preferably used as an impurity for forming the n-type second compound semiconductor layer.
- ITO AZO p-GaAs Zn (2 ⁇ 10 19 ) 4.5 ⁇ 10 ⁇ 5 1.9 ⁇ 10 ⁇ 3 p-GaP: Zn (2 ⁇ 10 19 ) 1.4 ⁇ 10 ⁇ 3 n-GaInP: Si (2 ⁇ 10 19 ) 5.5 ⁇ 10 ⁇ 4 n-GaAs: Si (5.0 ⁇ 10 18 ) 4.0 ⁇ 10 ⁇ 3 n-GaAs: Si (8.5 ⁇ 10 18 ) 8.0 ⁇ 10 ⁇ 5 n-GaAs: Te (1.7 ⁇ 10 19 ) 2.7 ⁇ 10 ⁇ 5
- the first electrode 30 was formed based on the following method. That is, in forming the first layer 31 of the first electrode 30, a transparent conductive material target composed of a transparent conductive material (ITO) and an additive target composed of an additive (Mo) are arranged. Prepare a sputtering device. First, sputtering using the additive target is performed, and the additive is attached to the transparent conductive material target. Next, the substrate 20 on which the light-receiving or light-emitting layer (light-receiving layer) 21 formed by laminating a plurality of compound semiconductor layers was carried into the sputtering apparatus, and the additive adhered without performing so-called pre-sputtering. Sputtering for forming the first layer 31 of the first electrode 30 is performed using the transparent conductive material target in the state. Thereafter, sputtering for forming the second layer 32 of the first electrode 30 is performed using a clean transparent conductive material target.
- ITO transparent conductive material
- Mo additive
- the transparent conductive material constituting the first electrode contains molybdenum (Mo) as an additive, and the first electrode Since the concentration of the additive contained in the transparent conductive material in the vicinity of the interface of one surface is higher than the concentration of the additive in the vicinity of the second surface of the first electrode, the low contact resistance value and the high light A first electrode that satisfies both the transmittance and the transmittance can be provided.
- Mo molybdenum
- Example 2 is a modification of Example 1.
- the light-receiving or light-emitting element or solar cell 12 of Example 2 is a concentrating solar cell provided with a condensing lens composed of a Fresnel lens on the light incident side, as shown in a schematic cross-sectional view in FIG. 1B. is there.
- an auxiliary electrode 40 made of AuGe layer / Ni layer / Au layer (the AuGe layer is on the first electrode 30 side) is formed on the second surface 30B of the first electrode 30, an auxiliary electrode 40 made of AuGe layer / Ni layer / Au layer (the AuGe layer is on the first electrode 30 side) is formed.
- the auxiliary electrode 40 has a structure in which a plurality of branch auxiliary electrodes 40A extend in parallel to each other, and both ends of the plurality of branch auxiliary electrodes 40A are connected to each other by a connecting portion (not shown).
- the branch auxiliary electrode 40A extends in the vertical direction on the paper surface of FIG. 1B.
- the auxiliary electrode 40 may be formed based on a PVD method such as a sputtering method or a vacuum evaporation method. In the drawing, the auxiliary electrode 40 is represented by one layer.
- a contact layer 26 is formed between the light receiving or light emitting layer 21 and the second surface 30 ⁇ / b> B of the first electrode 30.
- the light transmittance of the contact layer 26 is approximately 100%, and the contact layer 26 is made of the same compound semiconductor as the compound semiconductor constituting at least one of the plurality of compound semiconductor layers constituting the light receiving or light emitting layer 21.
- the light-receiving or light-emitting layer 21 has a stacked structure of an n-type second compound semiconductor layer 23 and a p-type first compound semiconductor layer 22 from the contact layer side, and the contact layer 26 is n +. It consists of type GaAs.
- the contact layer 26 has a thickness of 10 nm and a carrier concentration of 8.5 ⁇ 10 18 cm ⁇ 3 .
- the first electrode 330 having the same shape as that of the auxiliary electrode 40 of Example 2 is connected to the surface electric field via the contact layer 326. Formed on layer 24.
- the first electrode 330 is composed of AuGe layer / Ni layer / Au layer (AuGe layer is on the surface electric field layer 24 side), and the contact layer 326 is made of n + -GaAs.
- the contact layer 326 is removed from between the first electrode 330 and the first electrode 330.
- the current generated in the light receiving layer 321 flows as shown by an arrow in FIG. 11A.
- a solar cell having such a structure is applied to a concentrating type, a large current flows through a portion surrounded by a circle in FIG. 11A, resulting in a large loss due to resistance.
- n-GaAs layer (emitter layer) 323 formed on the first compound semiconductor layer 22 is made thicker.
- problems such as an increase in recombination loss due to an increase in the thickness of the n-GaAs layer (emitter layer) 323 arise.
- the contact layer 26 is formed between the light receiving or light emitting layer 21 and the second surface 30B of the first electrode 30, and the light transmittance of the contact layer 26 is as described above. That is, it does not absorb the light incident on the solar cell 12 and is transparent to the light incident on the solar cell 12.
- a first electrode 30 is formed on the contact layer 26. Therefore, the number of auxiliary electrodes 40 can be made smaller than the number of first electrodes 330 in the conventional solar cell shown in FIG. 11B. Further, the current generated in the light receiving or light emitting layer (light receiving layer) 21 flows as shown by an arrow in FIG. 1B.
- the portion where current concentrates is smaller than that of the conventional solar cell shown in FIG. 11B, and the second compound semiconductor layer (emitter) It is not necessary to increase the film thickness of the layer.
- the problem that the light condensing area is reduced and the problem that the recombination loss is increased due to the increase in the thickness of the second compound semiconductor layer (emitter layer) 23 are surely solved. Can be avoided.
- Example 3 is a modification of Example 2. As shown in a schematic cross-sectional view in FIG. 2, in the light receiving or light emitting element or solar cell 13 of Example 3, the auxiliary electrode is formed on the second surface 30 ⁇ / b> B of the first electrode 30 in the same manner as in Example 2. 40 is formed, and a contact layer 26 is formed between the light receiving or light emitting layer (light receiving layer) 21 and the first surface 30A of the first electrode 30.
- an antireflection film 41 is further formed on the exposed second surface of the first electrode 30. In FIG. 2, the antireflection film 41 is represented by one layer.
- the antireflection film 41 and the auxiliary electrode 40 can be formed based on the following method, for example. That is, for example, a resist pattern is formed on the first electrode 30 based on the photolithography technique, the auxiliary electrode 40 is formed by a vacuum deposition method, and then the resist pattern is removed, whereby the auxiliary electrode is based on the lift-off method. 40 can be formed. Next, after forming a resist pattern based on the photolithography technique and forming the antireflection film 41 by vacuum deposition, the antireflection film 41 can be formed based on the lift-off method by removing the resist pattern. .
- the average light reflectance value was 15.09% when the thickness of the ITO layer was 170 nm.
- an antireflection film having a laminated structure of tantalum oxide having a thickness of 118 nm and silicon oxide having a thickness of 89 nm is formed on the ITO layer.
- the thickness of the ITO layer was 30 nm, the average light reflectance value was 2.95%.
- an antireflection film having a laminated structure of tantalum oxide having a thickness of 16 nm and silicon oxide having a thickness of 64 nm is formed on the ITO layer.
- the film thicknesses of tantalum oxide and silicon oxide are optimized in each ITO layer. From these results, if the thickness of the ITO layer is thick, even if the antireflection film is optimized, a sufficiently low light reflectance cannot be obtained, while if the thickness of the ITO layer is thin, It can be seen that a sufficiently low light reflectance can be obtained by optimizing the antireflection film. However, when the thickness of the ITO layer is thin, the sheet resistance value ( ⁇ / ⁇ ) of the ITO layer increases. Therefore, if an electrode having a low sheet resistance and a small thickness can be obtained, an electrode having a low sheet resistance and a low light reflectance can be obtained in combination with an appropriate antireflection film.
- Example 3A the width of the portion of the second surface 30B of the first electrode 30 exposed between the auxiliary electrode 40 and the auxiliary electrode 40 (denoted as “grid space” in the drawing) is 145 ⁇ m to 285 ⁇ m,
- the thickness of the first electrode 30 is 10 nm to 30 nm, and the antireflection film 41 is a laminated structure of a zinc sulfide layer having a thickness of 17 nm to 36 nm and a magnesium fluoride layer having a thickness of 85 nm to 93 nm.
- Table 4 shows the result of simulating the thickness of the first electrode 30 and the film thickness configuration of the antireflection film for obtaining the minimum light reflection amount.
- the simulation results of the maximum conversion efficiency are shown using the thickness of the first electrode 30 and the width of the portion of the second surface 30B of the first electrode 30 exposed between the auxiliary electrode 40 and the auxiliary electrode 40 as parameters. It is shown in FIG. 8 to 10, the maximum conversion efficiency decreases from the white area toward the black area. In FIG. 8, the maximum conversion efficiency of the whitest area is 34.49%, and the maximum conversion efficiency of the blackest area is 33.58%. In FIG. 9, the maximum conversion efficiency of the whitest area is 34.35%, and the maximum conversion efficiency of the blackest area is 33.41%. Furthermore, in FIG. 10, the maximum conversion efficiency of the whitest area is 34.79%, and the maximum conversion efficiency of the blackest area is 33.76%.
- the width of the portion of the second surface 30B of the first electrode 30 exposed between the auxiliary electrode 40 and the auxiliary electrode 40 is 145 ⁇ m to 285 ⁇ m, and the thickness of the first electrode 30 is 10 nm.
- the antireflection film 41 has a stacked structure of a tantalum oxide layer having a thickness of 18 nm to 32 nm and a silicon oxide layer having a thickness of 71 nm to 76 nm (the tantalum oxide layer is on the first electrode side).
- Table 4 below shows the result of simulating the thickness of the first electrode 30 and the film thickness configuration of the antireflection film for obtaining the minimum light reflection amount.
- the simulation results of the maximum conversion efficiency are shown using the thickness of the first electrode 30 and the width of the portion of the second surface 30B of the first electrode 30 exposed between the auxiliary electrode 40 and the auxiliary electrode 40 as parameters. 9 shows.
- the width of the portion of the second surface 30B of the first electrode 30 exposed between the auxiliary electrode 40 and the auxiliary electrode 40 is 145 ⁇ m to 285 ⁇ m, and the thickness of the first electrode 30 is 10 nm.
- the antireflection film 41 has a stacked structure of a titanium oxide layer having a thickness of 7 nm to 15 nm, a tantalum oxide layer having a thickness of 14 nm to 34 nm, and a silicon oxide layer having a thickness of 81 nm to 86 nm.
- Table 4 below shows the result of simulating the thickness of the first electrode 30 and the film thickness configuration of the antireflection film for obtaining the minimum light reflection amount.
- the simulation results of the maximum conversion efficiency are shown using the thickness of the first electrode 30 and the width of the portion of the second surface 30B of the first electrode 30 exposed between the auxiliary electrode 40 and the auxiliary electrode 40 as parameters. 10 shows.
- Table 5 below shows the measurement results of various characteristics of the solar cells (Example 3D and Example 3E) in which the contact layer 26 is made of GaInP and GaAs.
- the first electrode was composed only of the ITO layer.
- the result of simulating the relationship between the carrier concentration (impurity concentration) of the contact layer 26 and the conversion efficiency in the AM 15D is as shown in Table 7 below.
- Various parameters used in the simulation are as shown in Table 6 below.
- Average light absorption rate of the first electrode 1%
- Average electrical resistivity of the first electrode 1.5 ⁇ 10 ⁇ 4 ⁇ ⁇ cm
- Loss of incident light due to auxiliary electrode formation 5%
- Auxiliary electrode width 5.0 ⁇ m
- Grid space 97 ⁇ m
- Anti-reflective coating tantalum oxide 18nm / silicon oxide 65nm
- Light reflectance 3.3%
- the second electrode 30B is exposed on the portion of the second surface 30B of the first electrode 30 exposed between the auxiliary electrode 40 and the auxiliary electrode 40. You may attach unevenness. For that purpose, for example, after attaching ITO fine particles to the second surface 30B of the first electrode 30, the second surface 30B of the first electrode 30 containing the ITO fine particles may be etched.
- Example 4 relates to a light emitting diode (LED) or a surface emitting laser element (vertical cavity laser, VCSEL) of the present disclosure.
- the light-emitting diode 14 or the surface-emitting laser element 15 of Example 4 is Light emitting layers 121 and 221 formed by laminating a plurality of compound semiconductor layers, and An electrode (first electrode 30) having a first surface 30A and a second surface 30B facing the first surface 30A, in contact with the light emitting layers 121 and 221 on the first surface 30A, and made of a transparent conductive material; It has
- the transparent conductive material includes an additive composed of at least one metal selected from the group consisting of molybdenum, tungsten, chromium, ruthenium, titanium, nickel, zinc, iron and copper, or a compound thereof.
- the concentration of the additive contained in the transparent conductive material in the vicinity of the interface of the first surface 30A of the electrode (first electrode 30) is the additive contained in the transparent conductive material in the vicinity of the second surface 30B of the electrode (first electrode 30). It is higher than the concentration of things.
- the light-emitting diode 14 of Example 4 includes a first compound semiconductor layer 122 made of AlGaAs, AlGaInP, AlGaN, or GaN formed on a substrate 120.
- the first electrode 30 has a laminated structure of 31 and the second layer 32.
- a second electrode 25 is formed on the lower surface of the substrate 120.
- the light emitting layer 221 formed by laminating a plurality of compound semiconductor layers is formed on the substrate 220 made of an n-type GaAs substrate.
- the first compound semiconductor layer 222, the active layer 224, and the second compound semiconductor layer 223 are formed.
- the first compound semiconductor layer 222 includes, from the substrate side, a first DBR (Distributed Bragg Reflector) layer made of GaAs / AlGaAs, AlGaAs / AlGaAs, or GaAs / AlAs, a current confinement layer, and AlGaAs, AlGaInP, or GaInP.
- a first DBR Distributed Bragg Reflector
- the active layer 224 has a multiple quantum well structure made of GaAs, AlGaAs or GaInP.
- the second compound semiconductor layer 223 has a laminated structure of a second cladding layer made of GaAs / AlGaAs, AlGaAs / AlGaAs or GaAs / AlAs and a second DBR layer made of AlGaAs, AlGaInP or GaInP from the substrate side. Has been.
- the current confinement layer includes an insulating region (made of Al x O 1-x ) formed from the side surface of the mesa structure toward the center of the mesa structure, and a current confinement region (made of AlAs or AlGaAs surrounded by the insulating region). Composed of). Note that each of the first compound semiconductor layer 222, the active layer 224, and the second compound semiconductor layer 223 is represented by one layer in the drawing.
- a first electrode 30 having a stacked structure of a first layer 31 and a second layer 32 is formed on the light emitting layer 221.
- a second electrode 25 is formed on the lower surface of the substrate 220.
- the transparent conductive material constituting the first electrode contains molybdenum (Mo) as an additive, and the first electrode has a first surface. Since the concentration of the additive contained in the transparent conductive material in the vicinity of the interface is higher than the concentration of the additive contained in the transparent conductive material in the vicinity of the second surface of the first electrode, a low contact resistance value and a high light transmittance Thus, it is possible to provide a first electrode that satisfies both of the requirements.
- Mo molybdenum
- Example 5 is a modification of Example 1 to Example 4, but relates to the light receiving or light emitting element of the second configuration of the present disclosure.
- the concentration of the additive contained in the transparent conductive material constituting the first electrode is from the first surface of the first electrode. It gradually decreases toward the second surface.
- the first electrode has a transparent conductive material target made of a transparent conductive material (ITO) and an additive made of an additive (Mo), as described in the first embodiment.
- ITO transparent conductive material
- Mo additive made of an additive
- a substrate on which a light-receiving layer or a light-emitting layer (light-receiving layer) formed by laminating a plurality of compound semiconductor layers is loaded into a sputtering apparatus, and the additive is attached without performing so-called pre-sputtering.
- Sputtering for forming the first electrode is performed using a transparent conductive material target.
- a concentration gradient of Mo which is an impurity in the thickness direction of the first electrode is generated.
- the concentration of the additive contained in the transparent conductive material constituting the first electrode is set to the first electrode A structure that gradually decreases from the first surface toward the second surface can be obtained.
- Example 5 the configuration and structure of the light-receiving or light-emitting element, solar cell, photosensor, light-emitting diode, or surface-emitting laser element of Example 5 are the same as the light-receiving or light-emitting element, solar cell, or light of Example 1 to Example 3. Since it can be the same as the configuration and structure of the sensor, the light emitting diode of Example 4, or the surface emitting laser element, detailed description will be omitted.
- the present disclosure has been described based on the preferred embodiments, the present disclosure is not limited to these embodiments.
- the configurations and structures of the light receiving or light emitting element, solar cell, photosensor, light emitting diode, and surface emitting laser element in the examples are examples and can be changed as appropriate.
- the solar cell can be a multi-junction solar cell, for example.
- Light receiving or light emitting element A light-receiving or light-emitting layer formed by laminating a plurality of compound semiconductor layers, and An electrode made of a transparent conductive material, having a first surface and a second surface facing the first surface, in contact with the light receiving or light emitting layer on the first surface; It has The transparent conductive material includes an additive composed of at least one metal selected from the group consisting of molybdenum, tungsten, chromium, ruthenium, titanium, nickel, zinc, iron and copper, or a compound thereof.
- the light receiving or light emitting element in which the concentration of the additive contained in the transparent conductive material near the interface of the first surface of the electrode is higher than the concentration of the additive contained in the transparent conductive material near the second surface of the electrode.
- the compound semiconductor layer is a binary mixed crystal, ternary mixed crystal or quaternary mixed crystal GaAs compound semiconductor, binary mixed crystal, ternary mixed crystal or quaternary mixed crystal GaP compound semiconductor, ternary Mixed crystal or quaternary mixed crystal GaInP compound semiconductor, binary mixed crystal, ternary mixed crystal or quaternary mixed crystal InP compound semiconductor, or binary mixed crystal, ternary mixed crystal or quaternary mixed crystal
- the light receiving or light emitting device according to [1] which is made of a GaN-based compound semiconductor.
- the transparent conductive material is made of ITO, IZO, AZO, GZO, AlMgZnO, IGO, IGZO, IFO, ATO, FTO, SnO 2 , ZnO, B-doped ZnO, InSnZnO, or ITiO [1] or [ 2].
- the light receiving or light emitting element according to any one of [1] to [3], wherein an auxiliary electrode is formed on the second surface of the electrode.
- a contact layer is formed between the light receiving or emitting layer and the second surface of the electrode, The light receiving or light emitting device according to [4], wherein the contact layer is made of the same compound semiconductor as the compound semiconductor constituting at least one of the plurality of compound semiconductor layers constituting the light receiving or light emitting layer.
- the thickness of the contact layer is 3 nm to 30 nm when the band gap energy of the material constituting the contact layer is smaller than the band gap energy of the light receiving layer or the light emitting layer. element.
- the light-receiving or light-emitting layer has a stacked structure of an n-type compound semiconductor layer and a p-type compound semiconductor layer from the contact layer side, The light receiving or light emitting element according to any one of [5] to [7], wherein the contact layer is made of GaAs, GaInP, GaP, InP, InGaAs, InGaAsP, GaN, or InGaN.
- the [9] electrode has a laminated structure of the first layer and the second layer from the light receiving or light emitting layer side, The transparent conductive material constituting the first layer contains an additive, The light receiving or light emitting element according to any one of [1] to [8], wherein the transparent conductive material constituting the second layer contains no additive.
- the transparent conductive material includes an additive composed of at least one metal selected from the group consisting of molybdenum, tungsten, chromium, ruthenium, titanium, nickel, zinc, iron and copper, or a compound thereof.
- the concentration of the additive contained in the transparent conductive material near the interface of the first surface of the electrode is higher than the concentration of the additive contained in the transparent conductive material near the second surface of the electrode.
- An auxiliary electrode is formed on the second surface of the electrode, A contact layer is formed between the light receiving layer and the first surface of the electrode, The solar cell according to [16], wherein an antireflection film is formed on the exposed second surface of the electrode.
- the width of the portion of the second surface of the electrode exposed between the auxiliary electrode and the auxiliary electrode is 145 ⁇ m to 285 ⁇ m, The thickness of the electrode is 10 nm to 30 nm,
- the antireflection film according to [17], wherein the antireflection film has a laminated structure of a zinc sulfide layer having a thickness of 17 nm to 36 nm and a magnesium fluoride layer having a thickness of 85 nm to 93 nm.
- the width of the portion of the second surface of the electrode exposed between the auxiliary electrode is 145 ⁇ m to 285 ⁇ m,
- the thickness of the electrode is 10 nm to 30 nm,
- the width of the portion of the second surface of the electrode exposed between the auxiliary electrode and the auxiliary electrode is 145 ⁇ m to 285 ⁇ m, The thickness of the electrode is 10 nm to 25 nm,
- the solar cell according to [17], wherein the antireflection film has a laminated structure of a titanium oxide layer having a thickness of 7 nm to 15 nm, a tantalum oxide layer having a thickness of 14 nm to 34 nm, and a silicon oxide layer having a thickness of 81 nm to 86 nm.
- An auxiliary electrode is formed on the second surface of the electrode, A contact layer is formed between the light receiving layer and the first surface of the electrode, The solar cell according to [16], wherein a portion of the second surface of the electrode exposed between the auxiliary electrode and the auxiliary electrode is uneven. [22] The solar cell according to any one of [16] to [21], wherein a condensing lens is provided on the light incident side.
- Light sensor A light receiving layer formed by laminating a plurality of compound semiconductor layers, and An electrode made of a transparent conductive material, having a first surface and a second surface facing the first surface, in contact with the light receiving layer on the first surface; It has
- the transparent conductive material includes an additive composed of at least one metal selected from the group consisting of molybdenum, tungsten, chromium, ruthenium, titanium, nickel, zinc, iron and copper, or a compound thereof.
- the concentration of the additive contained in the transparent conductive material near the interface of the first surface of the electrode is higher than the concentration of the additive contained in the transparent conductive material near the second surface of the electrode.
- Light-emitting diode A light emitting layer formed by laminating a plurality of compound semiconductor layers, and An electrode made of a transparent conductive material, having a first surface and a second surface facing the first surface, in contact with the light emitting layer on the first surface; It has The transparent conductive material includes an additive composed of at least one metal selected from the group consisting of molybdenum, tungsten, chromium, ruthenium, titanium, nickel, zinc, iron and copper, or a compound thereof.
- the light emitting diode in which the concentration of the additive contained in the transparent conductive material near the interface of the first surface of the electrode is higher than the concentration of the additive contained in the transparent conductive material near the second surface of the electrode.
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Abstract
Description
複数の化合物半導体層が積層されて成る受光あるいは発光層、並びに、
第1面、及び、第1面と対向する第2面を有し、第1面において受光あるいは発光層と接し、透明導電材料から成る電極、
を具備しており、
透明導電材料には、モリブデン、タングステン、クロム、ルテニウム、チタン、ニッケル、亜鉛、鉄及び銅から成る群から選択された少なくとも1種の金属又はその化合物から成る添加物が含まれており、
電極の第1面の界面近傍における透明導電材料に含まれる添加物の濃度は、電極の第2面の近傍における透明導電材料に含まれる添加物の濃度よりも高い。
複数の化合物半導体層が積層されて成る受光層、並びに、
第1面、及び、第1面と対向する第2面を有し、第1面において受光層と接し、透明導電材料から成る電極、
を具備しており、
透明導電材料には、モリブデン、タングステン、クロム、ルテニウム、チタン、ニッケル、亜鉛、鉄及び銅から成る群から選択された少なくとも1種の金属又はその化合物から成る添加物が含まれており、
電極の第1面の界面近傍における透明導電材料に含まれる添加物の濃度は、電極の第2面の近傍における透明導電材料に含まれる添加物の濃度よりも高い。
複数の化合物半導体層が積層されて成る発光層、並びに、
第1面、及び、第1面と対向する第2面を有し、第1面において発光層と接し、透明導電材料から成る電極、
を具備しており、
透明導電材料には、モリブデン、タングステン、クロム、ルテニウム、チタン、ニッケル、亜鉛、鉄及び銅から成る群から選択された少なくとも1種の金属又はその化合物から成る添加物が含まれており、
電極の第1面の界面近傍における透明導電材料に含まれる添加物の濃度は、電極の第2面の近傍における透明導電材料に含まれる添加物の濃度よりも高い。
1.本開示の受光あるいは発光素子、太陽電池、光センサー、発光ダイオード及び面発光レーザ素子、全般に関する説明
2.実施例1(本開示の受光あるいは発光素子、太陽電池及び光センサー)
3.実施例2(実施例1の変形)
4.実施例3(実施例2の変形)
5.実施例4(本開示の発光ダイオード及び面発光レーザ素子)
6.実施例5(実施例1~実施例4の変形)、その他
本開示の受光あるいは発光素子、太陽電池、光センサー、発光ダイオードあるいは面発光レーザ素子(以下、これらを総称して、単に、『本開示の受光あるいは発光素子等』と呼ぶ場合がある)にあっては、化合物半導体層を構成する化合物半導体として、2元混晶、3元混晶若しくは4元混晶のGaAs系化合物半導体、2元混晶、3元混晶若しくは4元混晶のGaP系化合物半導体、3元混晶若しくは4元混晶のGaInP系化合物半導体、2元混晶、3元混晶若しくは4元混晶のInP系化合物半導体、又は、2元混晶、3元混晶若しくは4元混晶のGaN系化合物半導体を例示することができる。
電極は、受光あるいは発光層側あるいは受光層側あるいは発光層側から、第1層及び第2層の積層構造を有し、
第1層を構成する透明導電材料には添加物が含まれており、
第2層を構成する透明導電材料には添加物が含まれていない構成とすることができる。尚、このような構成の本開示の受光あるいは発光素子、太陽電池、光センサー、発光ダイオードあるいは面発光レーザ素子を、便宜上、『本開示の第1の構成の受光あるいは発光素子等』と呼ぶ。第1層を構成する透明導電材料に含まれる添加物の平均濃度をIc1、第2層を構成する透明導電材料に含まれる添加物の平均濃度をIc2としたとき、
5≦Ic1/Ic2≦10
を満足することが好ましい。透明導電材料に添加物が含まれているか否かは、SIMSを用いて評価することができる。ここで、1種の金属(具体的には、例えばモリブデン)のキャリヤ濃度が1.8×1016cm-3以上である場合には、透明導電材料に添加物が含まれていると判断することができるし、一方、1種の金属(具体的には、例えばモリブデン)のキャリヤ濃度が1.8×1016cm-3未満である場合には、透明導電材料に添加物が含まれていないと判断することができる。
0.4≦R2/R1≦1.0
0.80≦TP2×TP1≦1.0
を満足することが好ましい。更には、これらの好ましい構成を含む本開示の第1の構成の受光あるいは発光素子等において、電極の平均光透過率は95%以上であり、電極の平均電気抵抗率は2×10-6Ω・m(2×10-4Ω・cm)以下であり、電極と受光あるいは発光層(あるいは受光層あるいは発光層)との間の接触抵抗値は、特に、集光型太陽電池にあっては、1×10-8Ω・m2(1×10-4Ω・cm2)以下であることが好ましい。尚、非集光型太陽電池にあっては、電極と受光あるいは発光層(あるいは受光層あるいは発光層)との間の接触抵抗値は、1×10-7Ω・m2(1×10-3Ω・cm2)以下であることが好ましい。また、第1層の厚さをT1、第2層の厚さをT2としたとき、
2≦T2/T1≦70
を満足することが好ましく、この場合、
3≦T1(nm)≦60
10≦T2(nm)≦350
を満足することが一層好ましい。ここで、第1層を構成する透明導電材料に含まれる添加物の平均濃度は、SIMSを用いて測定することができる。また、第1層の電気抵抗率、第2層の電気抵抗率、電極の平均電気抵抗率は、例えば、太陽電池の表面をガラス基板等の支持基板に貼り合わせて、太陽電池の裏面側を剥離した後、残った電極層をホール測定、シート抵抗測定機を用いて測定するといった方法に基づき測定することができるし、電極と受光あるいは発光層(あるいは受光層あるいは発光層)との間の接触抵抗値は、例えば、太陽電池の表面をガラス基板等の支持基板に貼り合わせて、太陽電池の裏面側を剥離する際、コンタクト層(例えば、n-GaAs化合物半導体層から成る)だけを残し、TLMパターンを形成した後、四端子測定方法に基づき測定することができる。更には、第1層の光透過率(光吸収率)、第2層の光透過率(光吸収率)、電極の平均光透過率(光吸収率)は、ガラス基板に貼り合わせて透過及び反射率測定機を用いて測定することができる。また、第1層の厚さ、第2層の厚さは、段差計や、SEMあるいはTEM電子顕微鏡観察に基づき測定することができる。
電極の第2面上には補助電極が形成されており、
受光層と電極の第1面との間にはコンタクト層が形成されており、
露出した電極の第2面上には反射防止膜が形成されている構成とすることができる。コンタクト層に関しては、受光あるいは発光素子において先に説明した各種の規定を適用することができる。反射防止膜を構成する材料として、最上層の化合物半導体層を構成する化合物半導体よりも屈折率が小さい材料を用いることが好ましく、具体的には、例えば、TiO2、Al2O3、ZnS、MgF2、Ta2O5、SiO2、Si3N4から成る層、あるいは、これらの層の積層構造を挙げることができ、例えば、スパッタリング法等の物理的気相成長法(PVD法)に基づき形成することができる。そして、このような構成の太陽電池にあっては、より具体的には、補助電極と補助電極との間に露出した電極の第2面の部分の幅は145μm乃至285μmであり、電極の厚さは10nm乃至30nmであり、反射防止膜は、厚さ17nm乃至36nmの硫化亜鉛層、及び、厚さ85nm乃至93nmのフッ化マグネシウム層の積層構造を有する構成とすることができる。あるいは又、補助電極と補助電極との間に露出した電極の第2面の部分の幅は145μm乃至285μmであり、電極の厚さは10nm乃至30nmであり、反射防止膜は、厚さ18nm乃至32nmの酸化タンタル層、及び、厚さ71nm乃至76nmの酸化シリコン層の積層構造を有する構成とすることができる。あるいは又、補助電極と補助電極との間に露出した電極の第2面の部分の幅は145μm乃至285μmであり、電極の厚さは10nm乃至25nmであり、反射防止膜は、厚さ7nm乃至15nmの酸化チタン層、厚さ14nm乃至34nmの酸化タンタル層、及び、厚さ81nm乃至86nmの酸化シリコン層の積層構造を有する構成とすることができる。あるいは又、
電極の第2面上には補助電極が形成されており、
受光層と電極の第1面との間にはコンタクト層が形成されており、
補助電極と補助電極との間に露出した電極の第2面の部分には凹凸が付されている構成とすることができる。更には、以上に説明した好ましい構成を含む本開示の太陽電池にあっては、光入射側に、例えば、フレネルレンズから成る集光レンズが備えられている形態、即ち、集光型太陽電池とすることができる。
(A)複数の化合物半導体層が積層されて成る受光あるいは発光層(受光層)21、並びに、
(B)第1面30A、及び、第1面30Aと対向する第2面30Bを有し、第1面30Aにおいて受光あるいは発光層(受光層)21と接し、透明導電材料から成る電極(以下、便宜上、『第1電極30』と呼ぶ)、
を具備している。尚、実施例1の太陽電池11は非集光型太陽電池である。
Ic1=1.1×1017cm-3
Ic2=1.8×1016cm-3
R1 =2.5×10-4Ω・cm
R2 =1.5×10-4Ω・cm
TP1=97%
TP2=99%
T1 = 5nm
T2 =25nm
Ic1/Ic2=6.1
R2/R1 =0.6
TP2×TP1=0.96
T2/T1 =5.0
第1電極の平均光吸収率 =0.98%
第1電極の平均電気抵抗率 =2×10-4Ω・cm以下
第1電極と受光あるいは発光層との間の接触抵抗値=2.7×10-5Ω・cm2
Ic1=1.0×1017cm-3
Ic2=2.0×1016cm-3
R1 =7.0×10-4Ω・cm
R2 =6.70×10-4Ω・cm
TP1=97%
TP2=99%
T1 = 5nm
T2 =25nm
Ic1/Ic2=5.0
R2/R1 =0.96
TP2×TP1=0.96
T2/T1 =5.0
第1電極の平均光吸収率 =1.0%
第1電極の平均電気抵抗率 =7.4×10-4Ω・cm以下
第1電極と受光あるいは発光層との間の接触抵抗値=1×10-4Ω・cm2以下
ITO AZO
p-GaAs :Zn (2×1019) 4.5×10-5 1.9×10-3
p-GaP :Zn (2×1019) 1.4×10-3
n-GaInP:Si (2×1019) 5.5×10-4
n-GaAs :Si (5.0×1018) 4.0×10-3
n-GaAs :Si (8.5×1018) 8.0×10-5
n-GaAs :Te (1.7×1019) 2.7×10-5
第1電極の平均光吸収率 =1%
第1電極の平均電気抵抗率 =1.5×10-4Ω・cm
補助電極形成による入射光のロス=5%
補助電極幅 =5.0μm
グリッドスペース =97μm
反射防止膜 =酸化タンタル18nm/酸化シリコン65nm
光反射率 =3.3%
複数の化合物半導体層が積層されて成る発光層121,221、並びに、
第1面30A、及び、第1面30Aと対向する第2面30Bを有し、第1面30Aにおいて発光層121,221と接し、透明導電材料から成る電極(第1電極30)、
を具備しており、
透明導電材料には、モリブデン、タングステン、クロム、ルテニウム、チタン、ニッケル、亜鉛、鉄及び銅から成る群から選択された少なくとも1種の金属又はその化合物から成る添加物が含まれており、
電極(第1電極30)の第1面30Aの界面近傍における透明導電材料に含まれる添加物の濃度は、電極(第1電極30)の第2面30Bの近傍における透明導電材料に含まれる添加物の濃度よりも高い。
[1]《受光あるいは発光素子》
複数の化合物半導体層が積層されて成る受光あるいは発光層、並びに、
第1面、及び、第1面と対向する第2面を有し、第1面において受光あるいは発光層と接し、透明導電材料から成る電極、
を具備しており、
透明導電材料には、モリブデン、タングステン、クロム、ルテニウム、チタン、ニッケル、亜鉛、鉄及び銅から成る群から選択された少なくとも1種の金属又はその化合物から成る添加物が含まれており、
電極の第1面の界面近傍における透明導電材料に含まれる添加物の濃度は、電極の第2面の近傍における透明導電材料に含まれる添加物の濃度よりも高い受光あるいは発光素子。
[2]化合物半導体層は、2元混晶、3元混晶若しくは4元混晶のGaAs系化合物半導体、2元混晶、3元混晶若しくは4元混晶のGaP系化合物半導体、3元混晶若しくは4元混晶のGaInP系化合物半導体、2元混晶、3元混晶若しくは4元混晶のInP系化合物半導体、又は、2元混晶、3元混晶若しくは4元混晶のGaN系化合物半導体から成る[1]に記載の受光あるいは発光素子。
[3]透明導電材料は、ITO、IZO、AZO、GZO、AlMgZnO、IGO、IGZO、IFO、ATO、FTO、SnO2、ZnO、BドープのZnO、InSnZnO、又は、ITiOから成る[1]又は[2]に記載の受光あるいは発光素子。
[4]電極の第2面上には補助電極が形成されている[1]乃至[3]のいずれか1項に記載の受光あるいは発光素子。
[5]受光あるいは発光層と電極の第2面との間にコンタクト層が形成されており、
コンタクト層は、受光あるいは発光層を構成する複数の化合物半導体層の少なくとも1層を構成する化合物半導体と同じ化合物半導体から成る[4]に記載の受光あるいは発光素子。
[6]コンタクト層の厚さは、コンタクト層を構成する材料のバンドギャップエネルギーが受光層あるいは発光層のバンドギャップエネルギーよりも小さい場合において、3nm乃至30nmである[5]に記載の受光あるいは発光素子。
[7]コンタクト層のキャリア濃度は1×1019cm-3以上である[5]又は[6]に記載の受光あるいは発光素子。
[8]受光あるいは発光層は、コンタクト層側から、n型化合物半導体層、及び、p型化合物半導体層の積層構造を有し、
コンタクト層は、GaAs、GaInP、GaP、InP、InGaAs、InGaAsP、GaN、InGaNから成る[5]乃至[7]のいずれか1項に記載の受光あるいは発光素子。
[9」電極は、受光あるいは発光層側から、第1層及び第2層の積層構造を有し、
第1層を構成する透明導電材料には添加物が含まれており、
第2層を構成する透明導電材料には添加物が含まれていない[1]乃至[8]のいずれか1項に記載の受光あるいは発光素子。
[10]第1層を構成する透明導電材料に含まれる添加物の平均濃度は、5×1016cm-3乃至1×1018cm-3である[9]に記載の受光あるいは発光素子。
[11]第1層の電気抵抗率をR1、第2層の電気抵抗率をR2、波長400nm乃至900nmにおける第1層の光透過率をTP1、第2層の光透過率をTP2としたとき、
0.4≦R2/R1≦1.0
0.8≦TP2×TP1≦1.0
を満足する[9]又は[10]に記載の受光あるいは発光素子。
[12]電極の平均光透過率は95%以上であり、
電極の平均電気抵抗率は2×10-6Ω・m以下であり、
電極と受光あるいは発光層との間の接触抵抗値は1×10-8Ω・m2以下である[9]乃至[11]のいずれか1項に記載の受光あるいは発光素子。
[13]第1層の厚さをT1、第2層の厚さをT2としたとき、
2≦T2/T1≦70
を満足する[9]乃至[12]のいずれか1項に記載の受光あるいは発光素子。
[14]3≦T1(nm)≦60
10≦T2(nm)≦350
を満足する[13]に記載の受光あるいは発光素子。
[15]電極を構成する透明導電材料に含まれる添加物の濃度は、電極の第1面から第2面に向かって、漸次、低下する[1]乃至[8]のいずれか1項に記載の受光あるいは発光素子。
[16]《太陽電池》
複数の化合物半導体層が積層されて成る受光層、並びに、
第1面、及び、第1面と対向する第2面を有し、第1面において受光層と接し、透明導電材料から成る電極、
を具備しており、
透明導電材料には、モリブデン、タングステン、クロム、ルテニウム、チタン、ニッケル、亜鉛、鉄及び銅から成る群から選択された少なくとも1種の金属又はその化合物から成る添加物が含まれており、
電極の第1面の界面近傍における透明導電材料に含まれる添加物の濃度は、電極の第2面の近傍における透明導電材料に含まれる添加物の濃度よりも高い太陽電池。
[17]電極の第2面上には補助電極が形成されており、
受光層と電極の第1面との間にはコンタクト層が形成されており、
露出した電極の第2面上には反射防止膜が形成されている[16]に記載の太陽電池。
[18]補助電極と補助電極との間に露出した電極の第2面の部分の幅は145μm乃至285μmであり、
電極の厚さは10nm乃至30nmであり、
反射防止膜は、厚さ17nm乃至36nmの硫化亜鉛層、及び、厚さ85nm乃至93nmのフッ化マグネシウム層の積層構造を有する[17]に記載の太陽電池。
[19]補助電極と補助電極との間に露出した電極の第2面の部分の幅は145μm乃至285μmであり、
電極の厚さは10nm乃至30nmであり、
反射防止膜は、厚さ18nm乃至32nmの酸化タンタル層、及び、厚さ71nm乃至76nmの酸化シリコン層の積層構造を有する[17]に記載の太陽電池。
[20]補助電極と補助電極との間に露出した電極の第2面の部分の幅は145μm乃至285μmであり、
電極の厚さは10nm乃至25nmであり、
反射防止膜は、厚さ7nm乃至15nmの酸化チタン層、厚さ14nm乃至34nmの酸化タンタル層、及び、厚さ81nm乃至86nmの酸化シリコン層の積層構造を有する[17]に記載の太陽電池。
[21]電極の第2面上には補助電極が形成されており、
受光層と電極の第1面との間にはコンタクト層が形成されており、
補助電極と補助電極との間に露出した電極の第2面の部分には凹凸が付されている[16]に記載の太陽電池。
[22]光入射側には、集光レンズが備えられている[16]乃至[21]のいずれか1項に記載の太陽電池。
[23]《光センサー》
複数の化合物半導体層が積層されて成る受光層、並びに、
第1面、及び、第1面と対向する第2面を有し、第1面において受光層と接し、透明導電材料から成る電極、
を具備しており、
透明導電材料には、モリブデン、タングステン、クロム、ルテニウム、チタン、ニッケル、亜鉛、鉄及び銅から成る群から選択された少なくとも1種の金属又はその化合物から成る添加物が含まれており、
電極の第1面の界面近傍における透明導電材料に含まれる添加物の濃度は、電極の第2面の近傍における透明導電材料に含まれる添加物の濃度よりも高い光センサー。
[24]《発光ダイオード》
複数の化合物半導体層が積層されて成る発光層、並びに、
第1面、及び、第1面と対向する第2面を有し、第1面において発光層と接し、透明導電材料から成る電極、
を具備しており、
透明導電材料には、モリブデン、タングステン、クロム、ルテニウム、チタン、ニッケル、亜鉛、鉄及び銅から成る群から選択された少なくとも1種の金属又はその化合物から成る添加物が含まれており、
電極の第1面の界面近傍における透明導電材料に含まれる添加物の濃度は、電極の第2面の近傍における透明導電材料に含まれる添加物の濃度よりも高い発光ダイオード。
[25]《面発光レーザ素子》
複数の化合物半導体層が積層されて成る発光層、並びに、
第1面、及び、第1面と対向する第2面を有し、第1面において発光層と接し、透明導電材料から成る電極、
を具備しており、
透明導電材料には、モリブデン、タングステン、クロム、ルテニウム、チタン、ニッケル、亜鉛、鉄及び銅から成る群から選択された少なくとも1種の金属又はその化合物から成る添加物が含まれており、
電極の第1面の界面近傍における透明導電材料に含まれる添加物の濃度は、電極の第2面の近傍における透明導電材料に含まれる添加物の濃度よりも高い面発光レーザ素子。
Claims (19)
- 複数の化合物半導体層が積層されて成る受光あるいは発光層、並びに、
第1面、及び、第1面と対向する第2面を有し、第1面において受光あるいは発光層と接し、透明導電材料から成る電極、
を具備しており、
透明導電材料には、モリブデン、タングステン、クロム、ルテニウム、チタン、ニッケル、亜鉛、鉄及び銅から成る群から選択された少なくとも1種の金属又はその化合物から成る添加物が含まれており、
電極の第1面の界面近傍における透明導電材料に含まれる添加物の濃度は、電極の第2面の近傍における透明導電材料に含まれる添加物の濃度よりも高い受光あるいは発光素子。 - 化合物半導体層は、2元混晶、3元混晶若しくは4元混晶のGaAs系化合物半導体、2元混晶、3元混晶若しくは4元混晶のGaP系化合物半導体、3元混晶若しくは4元混晶のGaInP系化合物半導体、2元混晶、3元混晶若しくは4元混晶のInP系化合物半導体、又は、2元混晶、3元混晶若しくは4元混晶のGaN系化合物半導体から成る請求項1に記載の受光あるいは発光素子。
- 透明導電材料は、ITO、IZO、AZO、GZO、AlMgZnO、IGO、IGZO、IFO、ATO、FTO、SnO2、ZnO、BドープのZnO、InSnZnO、又は、ITiOから成る請求項1に記載の受光あるいは発光素子。
- 電極の第2面上には補助電極が形成されている請求項1に記載の受光あるいは発光素子。
- 受光あるいは発光層と電極の第2面との間にコンタクト層が形成されており、
コンタクト層は、受光あるいは発光層を構成する複数の化合物半導体層の少なくとも1層を構成する化合物半導体と同じ化合物半導体から成る請求項4に記載の受光あるいは発光素子。 - コンタクト層の厚さは、コンタクト層を構成する材料のバンドギャップエネルギーが受光層あるいは発光層のバンドギャップエネルギーよりも小さい場合において、3nm乃至30nmである請求項5に記載の受光あるいは発光素子。
- 電極は、受光あるいは発光層側から、第1層及び第2層の積層構造を有し、
第1層を構成する透明導電材料には添加物が含まれており、
第2層を構成する透明導電材料には添加物が含まれていない請求項1に記載の受光あるいは発光素子。 - 第1層を構成する透明導電材料に含まれる添加物の平均濃度は、5×1016cm-3乃至1×1018cm-3である請求項7に記載の受光あるいは発光素子。
- 第1層の電気抵抗率をR1、第2層の電気抵抗率をR2、波長400nm乃至900nmにおける第1層の光透過率をTP1、第2層の光透過率をTP2としたとき、
0.4≦R2/R1≦1.0
0.8≦TP2×TP1≦1.0
を満足する請求項7に記載の受光あるいは発光素子。 - 電極を構成する透明導電材料に含まれる添加物の濃度は、電極の第1面から第2面に向かって、漸次、低下する請求項1に記載の受光あるいは発光素子。
- 複数の化合物半導体層が積層されて成る受光層、並びに、
第1面、及び、第1面と対向する第2面を有し、第1面において受光層と接し、透明導電材料から成る電極、
を具備しており、
透明導電材料には、モリブデン、タングステン、クロム、ルテニウム、チタン、ニッケル、亜鉛、鉄及び銅から成る群から選択された少なくとも1種の金属又はその化合物から成る添加物が含まれており、
電極の第1面の界面近傍における透明導電材料に含まれる添加物の濃度は、電極の第2面の近傍における透明導電材料に含まれる添加物の濃度よりも高い太陽電池。 - 電極の第2面上には補助電極が形成されており、
受光層と電極の第1面との間にはコンタクト層が形成されており、
露出した電極の第2面上には反射防止膜が形成されている請求項11に記載の太陽電池。 - 補助電極と補助電極との間に露出した電極の第2面の部分の幅は145μm乃至285μmであり、
電極の厚さは10nm乃至30nmであり、
反射防止膜は、厚さ17nm乃至36nmの硫化亜鉛層、及び、厚さ85nm乃至93nmのフッ化マグネシウム層の積層構造を有する請求項12に記載の太陽電池。 - 補助電極と補助電極との間に露出した電極の第2面の部分の幅は145μm乃至285μmであり、
電極の厚さは10nm乃至30nmであり、
反射防止膜は、厚さ18nm乃至32nmの酸化タンタル層、及び、厚さ71nm乃至76nmの酸化シリコン層の積層構造を有する請求項12に記載の太陽電池。 - 補助電極と補助電極との間に露出した電極の第2面の部分の幅は145μm乃至285μmであり、
電極の厚さは10nm乃至25nmであり、
反射防止膜は、厚さ7nm乃至15nmの酸化チタン層、厚さ14nm乃至34nmの酸化タンタル層、及び、厚さ81nm乃至86nmの酸化シリコン層の積層構造を有する請求項12に記載の太陽電池。 - 電極の第2面上には補助電極が形成されており、
受光層と電極の第1面との間にはコンタクト層が形成されており、
補助電極と補助電極との間に露出した電極の第2面の部分には凹凸が付されている請求項11に記載の太陽電池。 - 複数の化合物半導体層が積層されて成る受光層、並びに、
第1面、及び、第1面と対向する第2面を有し、第1面において受光層と接し、透明導電材料から成る電極、
を具備しており、
透明導電材料には、モリブデン、タングステン、クロム、ルテニウム、チタン、ニッケル、亜鉛、鉄及び銅から成る群から選択された少なくとも1種の金属又はその化合物から成る添加物が含まれており、
電極の第1面の界面近傍における透明導電材料に含まれる添加物の濃度は、電極の第2面の近傍における透明導電材料に含まれる添加物の濃度よりも高い光センサー。 - 複数の化合物半導体層が積層されて成る発光層、並びに、
第1面、及び、第1面と対向する第2面を有し、第1面において発光層と接し、透明導電材料から成る電極、
を具備しており、
透明導電材料には、モリブデン、タングステン、クロム、ルテニウム、チタン、ニッケル、亜鉛、鉄及び銅から成る群から選択された少なくとも1種の金属又はその化合物から成る添加物が含まれており、
電極の第1面の界面近傍における透明導電材料に含まれる添加物の濃度は、電極の第2面の近傍における透明導電材料に含まれる添加物の濃度よりも高い発光ダイオード。 - 複数の化合物半導体層が積層されて成る発光層、並びに、
第1面、及び、第1面と対向する第2面を有し、第1面において発光層と接し、透明導電材料から成る電極、
を具備しており、
透明導電材料には、モリブデン、タングステン、クロム、ルテニウム、チタン、ニッケル、亜鉛、鉄及び銅から成る群から選択された少なくとも1種の金属又はその化合物から成る添加物が含まれており、
電極の第1面の界面近傍における透明導電材料に含まれる添加物の濃度は、電極の第2面の近傍における透明導電材料に含まれる添加物の濃度よりも高い面発光レーザ素子。
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2019000476A1 (zh) * | 2017-06-27 | 2019-01-03 | 海门市绣羽工业设计有限公司 | 一种具有防反射层的砷化镓太阳能电池 |
KR20200041428A (ko) * | 2018-10-11 | 2020-04-22 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60208813A (ja) * | 1984-04-02 | 1985-10-21 | Mitsubishi Electric Corp | 光電変換装置とその製造方法 |
JPS61260684A (ja) * | 1985-05-04 | 1986-11-18 | テレフンケン・エレクトロニク・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング | 太陽電池 |
JPH05110125A (ja) * | 1991-10-17 | 1993-04-30 | Canon Inc | 光起電力素子 |
JP2002217428A (ja) * | 2001-01-22 | 2002-08-02 | Sanyo Electric Co Ltd | 光電変換素子及びその製造方法 |
JP2006128631A (ja) * | 2004-10-29 | 2006-05-18 | Samsung Electro Mech Co Ltd | 多層電極及びこれを備える化合物半導体の発光素子 |
JP2008124381A (ja) * | 2006-11-15 | 2008-05-29 | Sharp Corp | 太陽電池 |
JP2011049453A (ja) * | 2009-08-28 | 2011-03-10 | Sharp Corp | 窒化物半導体発光素子 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002256423A (ja) | 2001-03-05 | 2002-09-11 | Sumitomo Metal Mining Co Ltd | 透明導電膜作製用焼結体ターゲットおよびその製造方法 |
CN100459189C (zh) * | 2003-11-19 | 2009-02-04 | 日亚化学工业株式会社 | 半导体元件 |
US7061026B2 (en) * | 2004-04-16 | 2006-06-13 | Arima Optoelectronics Corp. | High brightness gallium nitride-based light emitting diode with transparent conducting oxide spreading layer |
KR100696529B1 (ko) * | 2005-08-02 | 2007-03-19 | 삼성에스디아이 주식회사 | 금속원소를 포함하는 광전변환소자용 전극 및 이를 채용한염료감응 태양전지 |
EP1965442B1 (en) * | 2005-12-14 | 2016-09-07 | Toyoda Gosei Co., Ltd. | Method for manufacturing gallium nitride compound semiconductor light-emitting device |
JP2008235878A (ja) * | 2007-02-19 | 2008-10-02 | Showa Denko Kk | 太陽電池及びその製造方法 |
GB0719554D0 (en) * | 2007-10-05 | 2007-11-14 | Univ Glasgow | semiconductor optoelectronic devices and methods for making semiconductor optoelectronic devices |
AU2008337899B2 (en) * | 2007-12-19 | 2013-10-31 | Merck Patent Gmbh | Optically variable pigments of high electrical conductivity |
KR101025932B1 (ko) | 2008-10-06 | 2011-03-30 | 김용환 | 전자빔 후처리를 이용한 투명성 산화 전극 제조 방법 |
EP2259329A1 (en) * | 2009-05-26 | 2010-12-08 | Institut de Ciències Fotòniques, Fundació Privada | Metal transparent conductors with low sheet resistance |
CN101997040B (zh) * | 2009-08-13 | 2012-12-12 | 杜邦太阳能有限公司 | 用于制造具有带有纹理表面的透明传导氧化物层的多层结构的工艺和借此制成的结构 |
US8003431B2 (en) * | 2009-10-21 | 2011-08-23 | Electronics And Telecommunications Research Institute | Method for antireflection treatment of a zinc oxide film and method for manufacturing solar cell using the same |
WO2011072227A1 (en) * | 2009-12-10 | 2011-06-16 | Nano Terra Inc. | Structured smudge-resistant anti-reflective coatings and methods of making and using the same |
KR101183967B1 (ko) * | 2010-02-16 | 2012-09-18 | 조선대학교산학협력단 | 경사기능 투명전도성 산화막 및 그 제조방법, 경사기능 투명전도성 산화막을 이용한 유기발광다이오드용 양극 및 태양전지용 윈도우층 |
KR101410598B1 (ko) | 2010-03-02 | 2014-06-24 | 도호쿠 다이가쿠 | 적층체, 그 제조 방법, 및 그것을 이용한 기능 소자 |
FR2961952B1 (fr) | 2010-06-23 | 2013-03-29 | Commissariat Energie Atomique | Substrat comprenant une couche d'oxyde transparent conducteur et son procede de fabrication |
US8404302B2 (en) | 2010-07-14 | 2013-03-26 | Sharp Laboratories Of America, Inc. | Solution process for fabricating a textured transparent conductive oxide (TCO) |
JP2013541221A (ja) | 2010-11-02 | 2013-11-07 | コーニンクレッカ フィリップス エヌ ヴェ | 改善された抽出効率を持つ発光装置 |
US9660126B2 (en) * | 2010-12-06 | 2017-05-23 | The Regents Of The University Of California | Photovoltaic device with three dimensional charge separation and collection |
EP2669952B1 (en) * | 2012-06-01 | 2015-03-25 | Roth & Rau AG | Photovoltaic device and method of manufacturing same |
-
2012
- 2012-08-09 CN CN201210281451.8A patent/CN103579380A/zh active Pending
-
2013
- 2013-06-04 WO PCT/JP2013/065471 patent/WO2014024554A1/ja active Application Filing
- 2013-06-04 US US14/419,355 patent/US20150179840A1/en not_active Abandoned
- 2013-06-04 JP JP2014529337A patent/JP6320295B2/ja active Active
-
2018
- 2018-08-13 US US16/102,115 patent/US10903376B2/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60208813A (ja) * | 1984-04-02 | 1985-10-21 | Mitsubishi Electric Corp | 光電変換装置とその製造方法 |
JPS61260684A (ja) * | 1985-05-04 | 1986-11-18 | テレフンケン・エレクトロニク・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング | 太陽電池 |
JPH05110125A (ja) * | 1991-10-17 | 1993-04-30 | Canon Inc | 光起電力素子 |
JP2002217428A (ja) * | 2001-01-22 | 2002-08-02 | Sanyo Electric Co Ltd | 光電変換素子及びその製造方法 |
JP2006128631A (ja) * | 2004-10-29 | 2006-05-18 | Samsung Electro Mech Co Ltd | 多層電極及びこれを備える化合物半導体の発光素子 |
JP2008124381A (ja) * | 2006-11-15 | 2008-05-29 | Sharp Corp | 太陽電池 |
JP2011049453A (ja) * | 2009-08-28 | 2011-03-10 | Sharp Corp | 窒化物半導体発光素子 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101905477B1 (ko) * | 2016-10-11 | 2018-11-21 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
WO2019000476A1 (zh) * | 2017-06-27 | 2019-01-03 | 海门市绣羽工业设计有限公司 | 一种具有防反射层的砷化镓太阳能电池 |
KR20200041428A (ko) * | 2018-10-11 | 2020-04-22 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
US11121195B2 (en) | 2018-10-11 | 2021-09-14 | Samsung Display Co., Ltd. | Organic light emitting display device |
KR102604434B1 (ko) | 2018-10-11 | 2023-11-23 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
WO2023181716A1 (ja) * | 2022-03-24 | 2023-09-28 | ソニーグループ株式会社 | 面発光レーザ、面発光レーザアレイ、及び電子機器 |
Also Published As
Publication number | Publication date |
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JP6320295B2 (ja) | 2018-05-09 |
US20180374970A1 (en) | 2018-12-27 |
JPWO2014024554A1 (ja) | 2016-07-25 |
US10903376B2 (en) | 2021-01-26 |
CN103579380A (zh) | 2014-02-12 |
US20150179840A1 (en) | 2015-06-25 |
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