WO2013187219A1 - エッチング方法及びプラズマ処理装置 - Google Patents
エッチング方法及びプラズマ処理装置 Download PDFInfo
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- WO2013187219A1 WO2013187219A1 PCT/JP2013/064650 JP2013064650W WO2013187219A1 WO 2013187219 A1 WO2013187219 A1 WO 2013187219A1 JP 2013064650 W JP2013064650 W JP 2013064650W WO 2013187219 A1 WO2013187219 A1 WO 2013187219A1
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- gas
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- 238000005530 etching Methods 0.000 title claims abstract description 89
- 238000012545 processing Methods 0.000 title claims abstract description 80
- 238000000034 method Methods 0.000 title claims abstract description 35
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 40
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 18
- 239000007789 gas Substances 0.000 claims description 238
- 239000000758 substrate Substances 0.000 claims description 15
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 8
- 229910001882 dioxygen Inorganic materials 0.000 claims description 8
- 238000012546 transfer Methods 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 8
- 239000000126 substance Substances 0.000 description 7
- 229910003691 SiBr Inorganic materials 0.000 description 6
- 239000003507 refrigerant Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010494 dissociation reaction Methods 0.000 description 3
- 230000005593 dissociations Effects 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 230000001629 suppression Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000007688 edging Methods 0.000 description 1
- -1 fluorine ions Chemical class 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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- H01J37/32449—Gas control, e.g. control of the gas flow
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Definitions
- Embodiments described herein relate generally to an etching method and a plasma processing apparatus, and more specifically, a method for etching an etching target layer containing polycrystalline silicon, and a plasma that can be used for performing the etching method.
- the present invention relates to a processing apparatus.
- a polycrystalline silicon layer may be used.
- a mask made of silicon oxide is generally provided on the layer to be etched, and the layer to be etched is etched using the mask.
- Such an etching technique is described in Patent Document 1, for example.
- a silicon oxide layer is provided on a layer to be etched which is a polycrystalline silicon layer, and a resist mask is provided on the silicon oxide layer.
- the silicon oxide layer is etched using the resist mask to form a mask made of silicon oxide.
- the resist mask is removed.
- the etching target layer is etched by the plasma of the etchant gas using a mask made of silicon oxide.
- the mask made of silicon oxide is damaged by the etching, and the mask cannot be maintained until the etching end point, or the desired dimensional accuracy In some cases, etching cannot be performed.
- One aspect of the present invention relates to a method for etching a layer to be etched containing polycrystalline silicon.
- This method includes (a) a step of preparing a substrate to be processed having a layer to be etched and a mask provided on the layer to be etched, and (b) a step of etching the layer to be etched using the mask.
- the mask includes a first mask portion made of polycrystalline silicon, and a second mask portion made of silicon oxide interposed between the first mask portion and the etching target layer. .
- a first gas for etching the layer to be etched In the step of etching the layer to be etched, a first gas for etching the layer to be etched, a second gas for removing deposits adhering to the mask, and a processing container containing the substrate to be processed, and A third gas for protecting the first mask portion is supplied to generate plasma in the processing container.
- a layer to be etched which is a polycrystalline silicon layer
- the first mask portion is protected by radicals generated from the third gas during etching of the etching target layer. Therefore, the mask can be maintained until the end point of etching of the etching target layer. Further, it is possible to supply a second gas for removing etching by-products attached to the mask, that is, deposits. As a result, the mask opening can be prevented from being closed by the deposit.
- the probability that the radicals are adsorbed in the etched layer is higher than the probability that the radicals generated from the third gas are adsorbed on the upper part of the mask, that is, the first mask part. Lower.
- the etching target layer can be etched while protecting the first mask portion.
- the first gas may be HBr gas.
- the second gas may be NF 3 gas.
- the etching by-product generated by etching the polycrystalline silicon layer with HBr gas, that is, SiBr 4 can be removed by NF 3 gas plasma.
- the third gas may be oxygen gas (O 2 gas). Oxygen radicals generated from oxygen gas can modify the polycrystalline silicon layer of the first mask portion so as to protect the first mask portion.
- the flow rate of the second gas with respect to the flow rate of the first gas is defined by a flow rate ratio of the first gas and the second gas of 20: 3. More than the flow rate, the flow rate of the third gas may be less than the flow rate of the second gas and greater than 1 ⁇ 2 of the flow rate of the second gas.
- the plasma processing apparatus includes a processing container, a gas supply unit, and a means for generating plasma.
- the gas supply unit includes a first gas for etching the polycrystalline silicon layer, a second gas for removing deposits generated by etching the polycrystalline silicon, and polycrystalline silicon in the processing container.
- a third gas for protection is supplied.
- the means generates a plasma of a first gas, a second gas, and a third gas. According to such a plasma processing apparatus, it is possible to etch the etching target layer while maintaining the above-described mask.
- the first gas may be HBr gas.
- the second gas may be NF 3 gas.
- the third gas may be oxygen gas (O 2 gas).
- the plasma processing apparatus may further include a control unit that controls the flow rates of the first gas, the second gas, and the third gas.
- the control unit is configured such that the flow rate of the second gas with respect to the flow rate of the first gas is greater than the flow rate defined by the flow ratio of the first gas and the second gas of 20: 3, and the flow rate of the third gas is
- the gas supply unit can be controlled to be smaller than the flow rate of the second gas and greater than 1 ⁇ 2 of the flow rate of the second gas.
- an etching method capable of maintaining a mask is provided. This method can maintain the mask even in the etching of the high aspect ratio polycrystalline silicon layer.
- FIG. 3 is a flowchart illustrating an etching method according to an embodiment.
- FIG. 3 is a cross-sectional view for explaining details of the etching method shown in FIG.
- FIG. 7 is a table showing processing conditions of Experimental Examples 1 to 6.
- 6 is a graph in which the flow rate of NF 3 gas and the flow rate of O 2 gas in Experimental Examples 1 to 6 are mapped.
- FIG. 1 is a diagram schematically illustrating a plasma processing apparatus according to an embodiment.
- FIG. 1 shows a cross section of a plasma processing apparatus according to an embodiment.
- a plasma processing apparatus 10 shown in FIG. 1 is a parallel plate type plasma processing apparatus.
- the plasma processing apparatus 10 includes a processing container 12.
- the processing container 12 has a substantially cylindrical shape, and defines a processing space S therein.
- a gate valve 30 that opens and closes a loading / unloading port for a substrate (substrate) W to be processed is attached to the side wall of the processing container 12.
- the plasma processing apparatus 10 includes a mounting table 14 in the processing container 12.
- the mounting table 14 is provided below the processing space S.
- the mounting table 14 includes a base 16 and an electrostatic chuck 18.
- the base 16 has a substantially disc shape and has conductivity.
- the base 16 is made of, for example, aluminum and constitutes a lower electrode.
- a high frequency power supply 32 is electrically connected to the base 16 via a matching unit 34.
- the high frequency power supply 32 applies high frequency power of a predetermined high frequency (for example, 2 MHz to 27 MHz) for ion attraction, that is, high frequency bias power, to the lower electrode, that is, the base 16.
- a predetermined high frequency for example, 2 MHz to 27 MHz
- the base 16 may have a function of absorbing the heat of the electrostatic chuck 18 and cooling the electrostatic chuck 18.
- a refrigerant channel 16p is formed inside the base 16, and a refrigerant inlet pipe and a refrigerant outlet pipe can be connected to the refrigerant channel 16p.
- the mounting table 14 is configured to be able to control the base 16 and the electrostatic chuck 18 to a predetermined temperature by circulating an appropriate refrigerant such as cooling water in the refrigerant flow path 16p.
- an electrostatic chuck 18 is provided on the upper surface of the base 16.
- the electrostatic chuck 18 is a substantially disk-shaped member, and includes an insulating layer 18a and a power feeding layer 18b.
- the insulating layer 18a is a film formed of an insulator such as ceramic
- the power feeding layer 18b is a conductive film formed as an inner layer of the insulating layer 18a.
- a DC power supply 56 is connected to the power supply layer 18b via a switch SW. When a DC voltage is applied from the DC power source 56 to the power feeding layer 18b, a Coulomb force is generated, and the substrate W to be processed is attracted and held on the electrostatic chuck 18 by the Coulomb force.
- a heater HT that is a heating element may be embedded in the electrostatic chuck 18.
- the electrostatic chuck 18 is configured to heat the substrate to be processed W to a predetermined temperature by the heater HT.
- the heater HT is connected to a heater power source HP through wiring.
- the plasma processing apparatus 10 may further include gas supply lines 58 and 60 and heat transfer gas supply units 62 and 64.
- the heat transfer gas supply unit 62 is connected to a gas supply line 58.
- the gas supply line 58 extends to the upper surface of the electrostatic chuck 18 and extends in an annular shape at the central portion of the upper surface.
- the heat transfer gas supply unit 62 supplies a heat transfer gas such as He gas between the upper surface of the electrostatic chuck 18 and the substrate W to be processed.
- the heat transfer gas supply unit 64 is connected to the gas supply line 60.
- the gas supply line 60 extends to the upper surface of the electrostatic chuck 18 and extends in an annular shape so as to surround the gas supply line 58 on the upper surface.
- the heat transfer gas supply unit 64 supplies a heat transfer gas such as He gas between the upper surface of the electrostatic chuck 18 and the substrate W to be processed.
- the plasma processing apparatus 10 may further include a cylindrical holding unit 20 and a cylindrical support unit 22.
- the cylindrical holding part 20 is in contact with the edge of the side surface and the bottom surface of the base 16 and holds the base 16.
- the cylindrical support portion 22 extends in the vertical direction from the bottom portion of the processing container 12 and supports the base 16 via the cylindrical holding portion 20.
- the plasma processing apparatus 10 may further include a focus ring FR placed on the upper surface of the cylindrical holding unit 20.
- the focus ring FR can be made of, for example, quartz.
- an exhaust path 24 is provided between the side wall of the processing vessel 12 and the cylindrical support portion 22.
- a baffle plate 25 is attached to the inlet of the exhaust passage 24 or in the middle thereof.
- An exhaust port 26 a is provided at the bottom of the exhaust path 24.
- the exhaust port 26 a is defined by an exhaust pipe 26 fitted in the bottom of the processing container 12.
- An exhaust device 28 is connected to the exhaust pipe 26.
- the exhaust device 28 has a vacuum pump and can depressurize the processing space S in the processing container 12 to a predetermined degree of vacuum.
- the plasma processing apparatus 10 further includes a shower head 38 in the processing container 12.
- the shower head 38 is provided above the processing space S.
- the shower head 38 includes an electrode plate 40 and an electrode support 42.
- the electrode plate 40 is a conductive plate having a substantially disk shape and constitutes an upper electrode. A plurality of gas vent holes 40 h are formed in the electrode plate 40.
- the electrode plate 40 is detachably supported by an electrode support 42.
- a buffer chamber 42 a is provided inside the electrode support 42.
- the plasma processing apparatus 10 further includes a gas supply unit 44, and the gas supply unit 44 is connected to the gas introduction port 42b of the buffer chamber 42a via a gas supply conduit 46.
- the gas supply unit 44 supplies the first gas, the second gas, and the third gas to the processing space S.
- the gas supply unit 44 includes a gas source 70a, a valve 70b, a flow rate controller 70c, a gas source 72a, a valve 72b, a flow rate controller 72c, a gas source 74a, a valve 74b, and a flow rate controller 74c.
- the gas source 70a is a gas source of the first gas. This first gas is an etchant gas for the etching layer to be etched by the plasma processing apparatus 10, that is, an etchant gas for a polycrystalline silicon layer, and in one embodiment, is an HBr gas.
- the gas source 70a is connected to the gas supply conduit 46 through a valve 70b and a flow rate controller 70c such as a mass flow controller.
- the gas source 72a is a gas source of the second gas.
- This second gas is a gas for removing deposits generated by etching the polycrystalline silicon layer, which is the layer to be etched, and in one embodiment, is a NF 3 gas.
- the gas source 72a is connected to the gas supply conduit 46 via a flow rate controller 72c such as a valve 72b and a mass flow controller.
- the gas source 74a is a third gas source. This third gas is a gas for protecting polycrystalline silicon contained in the etching mask for the layer to be etched, and in one embodiment, is an oxygen gas (O 2 gas).
- the gas source 74a is connected to the gas supply conduit 46 through a valve 74b and a flow rate controller 74c such as a mass flow controller.
- the electrode support 42 is formed with a plurality of holes that are respectively continuous with the plurality of gas vent holes 40h, and the plurality of holes communicate with the buffer chamber 42a. Therefore, the gas supplied from the gas supply unit 44 is supplied to the processing space S via the buffer chamber 42a and the gas vent 40h.
- the shower head 38 and the gas supply part 44 comprise the gas supply part which concerns on one Embodiment.
- a high frequency power source 35 is electrically connected to the electrode plate 40 via a matching unit 36.
- the high frequency power supply 35 applies high frequency power of a predetermined high frequency (for example, 27 MHz or more) for plasma generation to the electrode plate 40.
- a predetermined high frequency for example, 27 MHz or more
- the base 16, the electrode plate 40, and the high-frequency power source 35 constitute a means for generating plasma in one embodiment.
- a magnetic field forming mechanism 48 extending annularly or concentrically is provided on the ceiling of the processing vessel 12.
- the magnetic field forming mechanism 48 functions to facilitate the start of high-frequency discharge (plasma ignition) in the processing space S and maintain stable discharge.
- the plasma processing apparatus 10 further includes a control unit 66.
- the control unit 66 is connected to the exhaust device 28, the switch SW, the high frequency power source 32, the matching unit 34, the high frequency power source 35, the matching unit 36, the gas supply unit 44, the heat transfer gas supply units 62 and 64, and the heater power source HP. ing.
- the control unit 66 controls the exhaust device 28, the switch SW, the high frequency power source 32, the matching unit 34, the high frequency power source 35, the matching unit 36, the gas supply unit 44, the heat transfer gas supply units 62 and 64, and the heater power source HP. Send a signal.
- the supply of the first to third gases by the gas supply unit 44 and their flow rates, the supply of the heat transfer gas by the heat transfer gas supply units 62 and 64, and the power supply from the heater power source HP are controlled.
- the first to third gases are supplied from the gas supply unit 44 to the processing space S. Further, a high frequency electric field is formed between the electrode plate 40 and the base 16, that is, in the processing space S. As a result, plasma of the first gas is generated in the processing space S, and the etching target layer of the substrate to be processed W, that is, the polycrystalline silicon layer is etched by Br ions or Br radicals. Further, plasma of the second gas is generated, and deposits generated by etching of the etching target layer are removed by F ions or F radicals. Further, plasma of the third gas is generated, and the polycrystalline silicon of the mask used for etching the etching target layer is protected by O (oxygen) radicals.
- O oxygen
- FIG. 2 is a flowchart illustrating an etching method according to an embodiment.
- FIG. 3 is a cross-sectional view for explaining details of the etching method shown in FIG.
- a substrate to be processed W is prepared in step S1.
- substrate W has the to-be-etched layer EL which is a polycrystalline silicon layer, and the mask M is created on the to-be-etched layer EL which is a polycrystalline silicon layer in process S1.
- a silicon oxide layer OL for example, a SiO 2 layer is formed on the etched layer EL, and the polycrystalline silicon layer PL is formed on the silicon oxide layer OL.
- a resist mask RM having a predetermined pattern is formed on polycrystalline silicon layer PL.
- the silicon oxide layer OL and the polycrystalline silicon layer PL can be formed by using, for example, a plasma CVD apparatus.
- the resist mask RM can be created by using a photolithography technique.
- the polycrystalline silicon layer PL is etched.
- Polycrystalline silicon layer PL can be etched by using HBr gas as an etchant gas in a plasma processing apparatus similar to plasma processing apparatus 10.
- the polycrystalline silicon layer PL is etched in the portion exposed to the opening of the resist mask RM, and as a result, the first mask portion M1 that becomes a part of the mask M is formed. It is formed.
- the resist mask RM is removed.
- the silicon oxide layer OL is etched.
- the silicon oxide layer OL can be etched by using a fluorocarbon-based gas such as CF 4 gas as an etchant gas in a plasma processing apparatus similar to the plasma processing apparatus 10.
- a fluorocarbon-based gas such as CF 4 gas
- the silicon oxide layer OL is etched in the portion exposed to the opening of the first mask portion M1, and as a result, the second portion that becomes another part of the mask M is obtained.
- a mask portion M2 is formed. Thereby, the mask M including the first mask part M1 and the second mask part M2 is formed on the etching target layer EL.
- the substrate to be processed W prepared in step S ⁇ b> 1 is then placed on the electrostatic chuck 18 of the plasma processing apparatus 10 and adsorbed. Then, in step S2, as shown in FIG. 3E, the etching target layer EL is etched. In step S2, the layer to be etched EL is etched in the portion exposed to the opening of the mask M.
- step S2 the above-described first gas (HBr gas), second gas (NF 3 gas), and third gas (O 3) are used to etch the etched layer EL that is a polycrystalline silicon layer. 2 gas) is supplied into the processing container 12, and plasma of these gases is generated in the processing container 12.
- first gas HBr gas
- second gas NF 3 gas
- O 3 third gas
- FIG. 4 is a diagram for explaining the principle of step S2 of FIG.
- the layer to be etched EL is etched by the reaction of the following chemical formula 1.
- “Others” in Chemical Formula 1 includes H ions or H radicals.
- step S2 Br ions or Br radicals generated by dissociation of HBr gas react with the polycrystalline silicon of the etched layer EL to etch the etched layer.
- Br surrounded by a circle indicates Br ion or Br radical.
- step S2 the first mask portion M1 is protected by the reaction of the following chemical formula 2.
- O O 2 surrounded by a circle represents an O radical.
- the O radical can reach the upper portion of the mask M, that is, the first mask portion M1 without being inhibited.
- the layer to be etched EL exists in the space SP defined by the mask M, that is, in the bottom of the groove or hole defined by the mask M, and in the space SP, the volatilization generated by the etching of the layer to be etched EL occurs.
- Gas G for example, gas such as SiBr 4 is retained. Therefore, the probability that the electrically neutral O radical reaches the etching target layer EL is considerably lower than the probability that the O radical reaches the first mask portion M1.
- Br ions are attracted toward the layer to be etched EL by application of high-frequency bias power to the lower electrode 16. Based on this principle, in this etching method, it is considered that the mask M can be maintained until the end point of the etching by protecting the first mask portion M1 while etching the etching target layer EL. .
- step S2 etching by-products can adhere to the mask M as the deposit DP.
- the deposit DP may reduce the width of the opening defined by the mask M or may close the opening of the mask M in some cases.
- the deposit DP can be composed of, for example, SiBr 4 . Therefore, in this etching method, in step S2, NF 3 gas is supplied, and the deposit DP is removed by the reaction of the following chemical formula 3. [Chemical formula 3] SiBr 4 + xF ⁇ SiF x Br (4-x) Here, x is an integer of 1 to 3.
- step S2 fluorine ions or fluorine radicals generated by dissociation of the NF 3 gas react with SiBr 4 constituting the deposit DP, as shown in FIG. 4, and SiF x Br ( 4-x) is generated, and the SiF x Br (4-x) is evacuated to remove deposits.
- this etching method can suppress the opening of the mask M from being closed, or can suppress a change in the width of the opening of the mask M.
- “F” surrounded by a circle represents an F ion or an F radical.
- the flow rate of NF 3 gas with respect to the flow rate of HBr gas is higher than the flow rate defined by the flow rate ratio of HBr gas and NF 3 gas of 20: 3, and the flow rate of O 2 gas However, it may be smaller than the flow rate of NF 3 gas and larger than 1 ⁇ 2 of the flow rate of NF 3 gas.
- the flow rate of the HBr gas, the flow rate of the NF 3 gas, and the flow rate of the O 2 gas can be adjusted, for example, by controlling the flow rate controllers 70c, 72c, and 74c by the control unit 66.
- the deposit DP can be efficiently removed, and the mask opening can be prevented from being blocked. Moreover, the dimensional change of the opening of the mask M can be further reduced. In addition, it is possible to effectively supply both the protection of the mask M and the etching of the etching target layer EL by suppressing the supply of excessive oxygen radicals.
- FIG. 5 is a table showing the processing conditions of Experimental Examples 1 to 6.
- the pressure in the processing container is 10.6 Pa (80 mTorr)
- the high frequency power (HF power) of the high frequency power supply 35 is 400 W
- the high frequency power (LF) of the high frequency power supply 32 is used. Power
- the flow rate of HBr gas was set to 200 sccm.
- etching was performed for 146 seconds using different NF 3 gas flow rates and O 2 gas flow rates.
- the frequency of the high frequency power (HF power) of the high frequency power source 35 was set to 100 MHz, and the frequency of the high frequency power (LF power) of the high frequency power source 32 was set to 3.2 MHz.
- an etching target layer EL that is a polycrystalline silicon layer is formed using a mask M having an opening width of 40 nm, a thickness of the first mask portion M1 of 300 nm, and a thickness of the second mask portion M2 of 1000 nm. Etched.
- FIG. 6 is a graph mapping the flow rate of NF 3 gas and the flow rate of O 2 gas in Experimental Examples 1 to 6.
- the processing conditions of Experimental Examples 1, 3, and 6 differ in the flow rate of NF 3 gas.
- the flow rate of NF 3 gas is insufficient with respect to the flow rate of HBr, and the deposit DP is not completely removed from the mask M.
- the dimension of the opening of the mask M becomes small, and the etching target The dimension of the shape formed in the layer EL was smaller than the expected dimension.
- the deposit DP could be removed from the mask M.
- the flow rate of NF 3 gas to the gas flow rate of HBr is 20: it is preferably greater than the flow rate being defined was confirmed at a flow rate ratio of the third HBr gas and NF 3 gas.
- the mask M was not sufficiently protected, and the mask M was etched much.
- the processing conditions of Experimental Examples 2 , 4, 5, and 6 differ in the flow rate of O 2 gas.
- O radicals were insufficient, and the etching amount of the mask M was increased as described above.
- the mask M was protected by O radicals, and the etching amount of the mask M was small.
- the dimension of the shape formed in the etched layer EL was also the expected dimension.
- the protective film PF formed by O radicals becomes thicker.
- the flow rate of the O 2 gas is preferably smaller than the flow rate of the NF 3 gas and larger than 1 ⁇ 2 of the flow rate of the NF 3 gas. That is, it was confirmed that the flow rate of the NF 3 gas and the flow rate of the O 2 gas are preferably in a region surrounded by the dotted line and the alternate long and short dash line in FIG.
- the dotted line in FIG. 6 indicates that the flow rate of NF 3 gas and the flow rate of O 2 gas is 1: 1
- the alternate long and short dash line in FIG. 6 indicates that the flow rate of NF 3 gas and the flow rate of O 2 gas are 2: 1.
- an etching target layer made of polycrystalline silicon having only a mask similar to the second mask portion formed from a silicon oxide layer of 1000 nm thereon, a second gas and a third gas are used. Etching was performed in the same manner as in Experimental Example 5 under the other conditions. As a result, the thickness of the mask of Experimental Example 5 at the end of etching was 290 nm thicker than the thickness of the mask of the comparative example at the end of etching. Therefore, in Experimental Example 5, it was confirmed that the mask was maintained with a larger thickness until the end of edging.
- NF 3 gas instead of NF 3 gas, SF 6 gas, SiF 4 gas, C 4 F 8 gas, or CF 4 gas can be used as the second gas.
- the third gas instead of the O 2 gas, a mixed gas of O 2 gas and N 2 gas, or it is possible to use N 2 gas.
- the plasma processing apparatus 10 is a parallel plate type plasma processing apparatus, but various plasma processing apparatuses such as an inductively coupled plasma processing apparatus and a plasma processing apparatus using a microwave as a plasma source are applied to the present invention. Is possible.
- DESCRIPTION OF SYMBOLS 10 ... Plasma processing apparatus, 12 ... Processing container, 14 ... Mounting stand, 16 ... Base (lower electrode), 18 ... Electrostatic chuck, 28 ... Exhaust device, 32 ... High frequency power supply (high frequency bias), 35 ... High frequency power supply ( 38 ... shower head, 40 ... electrode plate, 44 ... gas supply unit, 66 ... control unit, W ... substrate to be processed, EL ... layer to be etched, M ... mask, M1 ... first mask unit, M2 ... second mask part, PF ... protective film, DP ... deposit, G ... volatile gas.
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Abstract
Description
[化学式1]
Si+4HBr→SiBr4+Others
ここで、化学式1における「Others」は、Hイオン又はHラジカル等を含む。
[化学式2]
Si+2O*→SiO2
即ち、工程S2では、O2ガスが解離することにより発生するOラジカル(O*)が、図4に示すように第1のマスク部M1の表面の多結晶シリコンと反応して、SiO2から構成される保護膜PFを形成する。なお、図4においては、円で囲まれた「O」がOラジカルを表している。
[化学式3]
SiBr4+xF→SiFxBr(4-x)
ここで、xは、1以上3以下の整数である。
Claims (10)
- 多結晶シリコンを含む被エッチング層をエッチングする方法であって、
前記被エッチング層と該被エッチング層上に設けられたマスクとを有する被処理基体を準備する工程と、
前記マスクを用いて、前記被エッチング層をエッチングする工程と、
を含み、
前記マスクは、多結晶シリコンから構成された第1のマスク部、及び、該第1のマスク部と前記被エッチング層の間に介在しており酸化シリコンから構成された第2のマスク部を含んでおり、
前記被エッチング層をエッチングする工程では、前記被処理基体を収容した処理容器内に、前記被エッチング層をエッチングするための第1のガス、前記マスクに付着する堆積物を除去するための第2のガス、及び、前記第1のマスク部を保護するための第3のガスを供給し、該処理容器内においてプラズマを生成する、
方法。 - 前記第1のガスは、HBrガスである、請求項1に記載の方法。
- 前記第2のガスは、NF3ガスである、請求項2に記載の方法。
- 前記第3のガスは、酸素ガスである、請求項2又は3に記載の方法。
- 前記第2のガスはNF3ガスであり、前記第3のガスは酸素ガスであり、
前記被エッチング層をエッチングする工程において、前記第1のガスの流量に対する前記第2のガスの流量が、20:3の前記第1のガスと前記第2のガスの流量比で規定される流量より多く、前記第3のガスの流量が、前記第2のガスの流量より少なく且つ前記第2のガスの流量の1/2より多い、
請求項1又は2に記載の方法。 - 処理容器と、
前記処理容器内に、多結晶シリコン層をエッチングするための第1のガス、多結晶シリコンのエッチングにより発生する堆積物を除去するための第2のガス、及び、多結晶シリコンを保護するための第3のガスを供給するガス供給部と、
前記第1のガス、前記第2のガス、及び前記第3のガスのプラズマを発生させる手段と、
を備える、プラズマ処理装置。 - 前記第1のガスは、HBrガスである、請求項6に記載のプラズマ処理装置。
- 前記第2のガスは、NF3ガスである、請求項7に記載のプラズマ処理装置。
- 前記第3のガスは、酸素ガスである、請求項7又は8に記載のプラズマ処理装置。
- 前記第1のガス、前記第2のガス、及び前記第3のガスの流量を制御する制御部を更に備え、
前記第2のガスはNF3ガスであり、前記第3のガスは酸素ガスであり、
前記制御部は、前記第1のガスの流量に対する前記第2のガスの流量が、20:3の前記第1のガスと前記第2のガスの流量比で規定される流量より多く、前記第3のガスの流量が前記第2のガスの流量より少なく且つ前記第2のガスの流量の1/2より多くなるように、前記ガス供給部を制御する、
請求項6又は7に記載のプラズマ処理装置。
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US14/400,381 US9224616B2 (en) | 2012-06-12 | 2013-05-27 | Etching method and plasma processing apparatus |
KR1020147031639A KR102122205B1 (ko) | 2012-06-12 | 2013-05-27 | 에칭 방법 및 플라즈마 처리 장치 |
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US9865471B2 (en) | 2015-04-30 | 2018-01-09 | Tokyo Electron Limited | Etching method and etching apparatus |
KR102424818B1 (ko) * | 2015-05-27 | 2022-07-25 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 장치 및 포커스 링 |
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JP6763750B2 (ja) * | 2016-11-07 | 2020-09-30 | 東京エレクトロン株式会社 | 被処理体を処理する方法 |
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US4722725A (en) | 1983-04-12 | 1988-02-02 | Interface Biomedical Laboratories, Inc. | Methods for preventing the introduction of air or fluid into the body of a patient |
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JP4722725B2 (ja) | 2006-02-17 | 2011-07-13 | 東京エレクトロン株式会社 | 処理方法およびプラズマエッチング方法 |
CN102339734B (zh) * | 2010-07-15 | 2013-06-19 | 中芯国际集成电路制造(上海)有限公司 | 截面为圆环的圆柱体的半导体器件的制作方法 |
JP2012253056A (ja) * | 2011-05-31 | 2012-12-20 | Toshiba Corp | 半導体装置の製造方法 |
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