WO2013168257A1 - 電力変換装置 - Google Patents
電力変換装置 Download PDFInfo
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- WO2013168257A1 WO2013168257A1 PCT/JP2012/061995 JP2012061995W WO2013168257A1 WO 2013168257 A1 WO2013168257 A1 WO 2013168257A1 JP 2012061995 W JP2012061995 W JP 2012061995W WO 2013168257 A1 WO2013168257 A1 WO 2013168257A1
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/46—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes without control electrode or semiconductor devices without control electrode
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/483—Converters with outputs that each can have more than two voltages levels
- H02M7/487—Neutral point clamped inverters
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/505—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means
- H02M7/515—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only
- H02M7/5152—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only with separate extinguishing means
Definitions
- the present invention relates to a power converter, and more particularly, to a power converter that outputs a low frequency and a low voltage.
- the output of the power converter (for example, a three-level converter)
- the frequency becomes low
- the time during which the sinusoidal current is conducted positively or negatively becomes longer.
- the conduction time of the switching semiconductor element becomes long, and the junction temperature of the switching semiconductor element continues to rise during this time and may eventually be damaged by overheating.
- Patent Document 1 discloses that when the output frequency becomes low, the operation duration time under a constant load condition required from the system is lengthened and the load condition required from the system is An object of the present invention is to provide a power converter that can continue operation even if there is a difference.
- the invention disclosed in Japanese Patent Application Laid-Open No. 2008-178188 (Patent Document 1) includes a plurality of switching semiconductor elements, and power for supplying a sine wave current to an AC motor by controlling these switching semiconductor elements on and off.
- the frequency correction means for increasing the output frequency in proportion to the heat load of the switching element obtained by calculation It comprises so that it may be provided.
- Patent Document 1 Japanese Patent Application Laid-Open No. 2008-178188
- the temperature of some of the semiconductor elements is high. There is a risk.
- a conventional two-level converter is used, there is a problem that it is difficult to adjust a voltage range between two semiconductor elements.
- the present invention has been made in view of the above problems, and an object of the present invention is to provide a power converter that outputs a frequency and a low voltage without providing a conventional frequency correction means.
- a three-level converter for converting the AC voltage of the AC power source into a DC voltage having three levels of first to third potentials, the three-level converter including first to third input terminals and a DC voltage;
- the second input terminal is supplied with an intermediate potential among the first to third potentials, and the first and third terminals connected in series in order between the first input terminal and the output terminal.
- the anode is connected to the second input terminal
- the cathode is a connection node between the first switching semiconductor element and the second switching semiconductor element, and the connection between the first freewheeling diode and the second freewheeling diode.
- the first connection connected to the node Between the diode, the third and fourth switching semiconductor elements connected in series between the output terminal and the third input terminal, and the third and fourth input terminals between the output terminal and the third input terminal.
- the third and fourth free-wheeling diodes connected in series in the direction opposite to the direction of current flowing through the switching semiconductor element, the cathode is connected to the second input terminal, and the anode is connected to the third switching semiconductor element and the fourth ON / OFF of the first to fourth switching semiconductor elements including a connection node to the switching semiconductor element and a second coupling diode connected to the connection node of the third return diode and the fourth return diode And a control circuit for controlling the switching of the first and second switching semiconductor elements when the control signal is switched from the off control to the on control.
- the first switching semiconductor element When the control voltage is applied to the second switching semiconductor element, the first switching semiconductor element is turned on after the turn-on time, and the control signals of the first and second switching semiconductor elements are switched from the on control to the off control.
- the control circuit turns off the control signal of the second switching semiconductor element after a turn-off time after applying the control voltage to the first switching semiconductor element.
- the same output voltage as that of the three-level converter can be obtained by igniting and extinguishing two semiconductor elements constituting one arm of the power converter (three-level converter) almost simultaneously.
- the number of semiconductor elements that generate extremely large heat can be reduced, and the output current can be increased.
- FIG. 1 is a diagram for explaining the configuration and operation of the power conversion device according to the embodiment. With reference to FIG. 1, this power converter is also called a so-called three-level converter.
- the power converter includes self-excited semiconductor elements G1 to G4, free-wheeling diodes DF1 to DF4 connected in antiparallel to the self-excited semiconductor elements G1 to G4, coupling diodes DC1 and DC2, and smoothing capacitors C1 and DC circuits that are DC voltage circuits. And C2.
- a GCT Gate Committed Turn-off
- IGBT Insulated Gate Bipolar Transistor
- MOSFET Metal-Oxide-Semiconductor Transistor-Off-Transistor ON
- the power conversion device includes self-excited semiconductor elements G1 and G2 connected in series between the terminal P and the terminal X in order, and the self-excited semiconductor elements G1 and G2 between the terminal P and the terminal X.
- the free-wheeling diodes DF1 and DF2 connected in series in the direction opposite to the direction of the conducting current, the anode is connected to the terminal C, the cathode is the connection node between the self-excited semiconductor element G1 and the self-excited semiconductor element G2, and the free-wheeling diode
- the coupling diode DC1 connected to the connection node between the DF1 and the freewheeling diode DF2
- the self-excited semiconductor elements G3 and G4 connected in series between the terminal X and the terminal N in sequence, and the terminal X and the terminal N.
- Free-wheeling diodes DF3 and DF4 connected in series in the direction opposite to the direction of the conduction current of the self-excited semiconductor elements G3 and G4, the cathode is connected to the terminal C, and the anode is the self-excited semiconductor element G3.
- a coupling diode DC2 is connected to a connection node between freewheeling diode DF4 a connection node and a reflux diode DF3 the self-excited semiconductor device G4.
- the terminals P, C, and N can take various potentials, in order to facilitate understanding, an intermediate potential is applied to the terminal C in the following description. That is, the potential applied to the terminal C is lower than the highest potential and is given an intermediate potential higher than the lowest potential.
- the voltage of the terminal P can be applied to the terminal X by turning on the elements provided on the broken line path PATH1 and turning off the other elements.
- the terminal X can receive the voltage at the terminal P by controlling the self-excited semiconductor elements G1 and G2 on the path PATH1 and controlling the other elements off.
- the voltage of the terminal X can be applied to the terminal P by turning on the elements provided on the broken line path PATH2 and turning off the other elements.
- the terminal P can receive the voltage of the terminal X by turning on the free-wheeling diodes DF1 and DF2 on the path PATH2 and turning off the other elements.
- FIG. 2 is a diagram for explaining the operation of the power conversion apparatus according to the embodiment. With reference to FIG. 2, (3) control in the case where the voltage of the terminal C is applied to the terminal X and (4) control in the case where the voltage of the terminal X is applied to the terminal C in the power conversion device will be described.
- the voltage of the terminal C can be applied to the terminal X by turning on the elements provided on the broken line path PATH3 and turning off the other elements.
- the terminal X can receive the voltage of the terminal C by controlling the self-excited semiconductor element G2 and the coupling diode DC1 on the path PATH3 and controlling the other elements off.
- the voltage of the terminal X can be applied to the terminal C by turning on the elements provided on the broken line PATH4 and turning off the other elements.
- the terminal C can receive the voltage at the terminal X by controlling the self-excited semiconductor element G3 and the coupling diode DC2 on the path PATH4 and controlling the other elements off.
- FIG. 3 is a diagram for explaining the operation of the power conversion apparatus according to the embodiment. With reference to FIG. 3, (5) control when the voltage at terminal N is applied to terminal X and (6) control when the voltage at terminal X is applied to terminal N in the power conversion device will be described.
- the voltage of the terminal N can be applied to the terminal X by turning on the elements provided on the dashed path PATH5 and turning off the other elements.
- the terminal X can receive the voltage of the terminal N by turning on the free-wheeling diodes DF3 and DF4 on the path PATH5 and turning off the other elements.
- the voltage of the terminal X can be applied to the terminal N by turning on the elements provided on the broken line PATH 6 and turning off the other elements.
- the terminal N can receive the voltage of the terminal X by turning on the self-excited semiconductor elements G3 and G4 on the path PATH6 and turning off the other elements.
- FIG. 4 is a diagram showing ignition patterns of the self-excited semiconductor elements G1 to G4 when the DC voltage 0V is output. Referring to FIG. 4, control signals and combined output waveforms of self-excited semiconductor elements G1 to G4 are shown.
- the self-excited semiconductor elements G1 and G2 are turned on almost simultaneously, but it is preferable that the self-excited semiconductor element G1 is turned on after the self-excited semiconductor element G2 is turned on. That is, the self-excited semiconductor element G1 is controlled to be turned on after the rising time (turn-on time) determined by the physical characteristics of the self-excited semiconductor element G2.
- the self-excited semiconductor elements G1 and G2 are on-controlled, while the self-excited semiconductor elements G3 and G4 are off-controlled.
- the ON control periods of the self-excited semiconductor elements G1 and G2 are substantially equal. Therefore, the voltage at the terminal P is supplied to the terminal X through the paths PATH1 and PATH2 between the time t1 and the time t2.
- the self-excited semiconductor elements G1 and G2 are controlled to be turned off almost simultaneously, but it is preferable that the self-excited semiconductor element G2 is turned off after the self-excited semiconductor element G1 is turned off. That is, the self-excited semiconductor element G2 is controlled to be turned off after the falling time (turn-off time) determined by the physical characteristics of the self-excited semiconductor element G1.
- the self-excited semiconductor elements G3 and G4 are turned on almost simultaneously, but it is preferable that the self-excited semiconductor element G4 is turned on after the self-excited semiconductor element G3 is turned on. That is, the self-excited semiconductor element G4 is controlled to be turned on after the rising time (turn-on time) determined by the physical characteristics of the self-excited semiconductor element G3.
- the self-excited semiconductor elements G3 and G4 are on-controlled, while the self-excited semiconductor elements G1 and G2 are off-controlled. At this time, the ON control periods of the self-excited semiconductor elements G3 and G4 are substantially equal. Therefore, the voltage at the terminal X is supplied to the terminal N through the paths PATH5 and PATH6 between the time t2 and the time t3.
- the self-excited semiconductor elements G3 and G4 are controlled to be turned off almost simultaneously, but it is preferable that the self-excited semiconductor element G3 is turned off after the self-excited semiconductor element G4 is turned off. That is, the self-excited semiconductor element G3 is controlled to be turned off after the falling time (turn-off time) determined by the physical characteristics of the self-excited semiconductor element G4.
- the ON control periods of the self-excited semiconductor elements G1 to G4 are substantially equal and have a period T (between time t1 and time t3). Further, the relationship between the control signal of the self-excited semiconductor element G3 and the control signal of the self-excited semiconductor element G2 is exclusive.
- a composite output waveform with a period T can be acquired.
- this combined output waveform only the voltages at terminals P and N are output.
- the power conversion device of the present embodiment does not output the voltage at terminal C, and performs substantially the same operation as a so-called two-level converter.
- the harmonic component of the output voltage is increased as compared with the conventional two-level converter, the voltage sharing problem is solved.
- FIG. 5 is a diagram for explaining the current flowing through each element in the firing pattern shown in FIG.
- the control signal of self-excited semiconductor elements G1 to G4 the current flowing through freewheeling diodes DF1 to DF4, the current flowing through coupling diodes DC1 and DC2, and the output current at terminal X are sequentially from the top. Indicated.
- each current value is shown with the direction in which the current flows from the terminals P, C, N to the terminal X being plus.
- the self-excited semiconductor elements G2 and G3 are instantaneously turned on and the self-excited semiconductor elements G1 and G4 are turned off, so that a current flows on the paths PATH3 and PATH4. Therefore, an instantaneous current flows through the coupling diode DC1.
- the operation as described above is repeated in the cycle T (between time t1 and time t3).
- FIG. 6 is a diagram showing an ignition pattern of a reference example of the self-excited semiconductor elements G1 to G4 when the DC voltage 0V is output. This is the firing pattern used in the conventional three level converter.
- the control signal of FIG. 6 will be described in comparison with the control signal of FIG.
- the configuration of the power conversion device to which this control signal is input is the same as that of the power conversion device of the embodiment shown in FIG.
- the voltage applied to the on / off control signal of self-excited semiconductor elements G1 and G3 is used exclusively, and the voltage applied to the on / off control signal of self-excited semiconductor elements G2 and G4 is used.
- the voltage is also used exclusively.
- the on-control time of the self-excited semiconductor element G1 is included in the on-control time of the self-excited semiconductor element G2, and the on-control time of the self-excited semiconductor element G4 is on Included in the controlled time.
- the time from the rise time t02 of the self-excited semiconductor element G2 to the rise time t11 of the self-excited semiconductor element G1 (2) the fall of the self-excited semiconductor element G1 from the fall time t12 Time until time t21, (3) time from rising time t12 of self-excited semiconductor element G3 to rising time t21 of self-excited semiconductor element G4, and (4) self-exciting semiconductor from falling time t22 of self-excited semiconductor element G4.
- the time until the fall time t31 of the element G2 is set so as to minimize the harmonic component of the combined output waveform.
- the self-excited semiconductor element G2 is turned on at time t02. Further, the self-excited semiconductor element G1 is turned on at time t11 delayed by time 2 ⁇ ⁇ t.
- the self-excited semiconductor elements G1 and G2 are turned on together until time t12.
- the self-excited semiconductor element G1 is turned off.
- the self-excited semiconductor element G3 is on-controlled.
- the self-excited semiconductor elements G2 and G3 are on-controlled from time t12 to time t21.
- the self-excited semiconductor element G4 is turned off and simultaneously the self-excited semiconductor element G4 is turned on.
- the self-excited semiconductor element G3 is turned on at time t12, and then the self-excited semiconductor element G4 is turned on at time t21. Between time t21 and time t22, both self-excited semiconductor elements G3 and G4 are on-controlled.
- the self-excited semiconductor element G4 is turned off and simultaneously the self-excited semiconductor element G2 is controlled to be on.
- control circuit 100 applies the firing pattern as described above to the self-excited semiconductor elements G1 to G4 every period T.
- the terminal X receives the voltage of the terminal P using the paths PATH1 and PATH2.
- the terminal X receives the voltage of the terminal C using the paths PATH3 and PATH4.
- the terminal X receives the voltage of the terminal C using the paths PATH5 and PATH6.
- the terminal X receives the voltage of the terminal C.
- FIG. 7 is a diagram for explaining the current flowing through each element in the firing pattern shown in FIG. FIG. 7 will be described in comparison with FIG. 6 and 7, between time t02 and time t11, self-excited semiconductor elements G2 and G3 are on and self-excited semiconductor elements G1 and G4 are off, so that a current flows on path PATH3. . Accordingly, a current flows to the terminal X through the path PATH3 in the self-excited semiconductor element G2. At this time, the current also flows through the coupling diode DC1 on the path PAHT3.
- the self-excited semiconductor element G2 and the coupling diode DC1 are compared with other elements such as the self-excited semiconductor elements G3 and G4 and the coupling diode DC2.
- the current is applied for a long time, and the number of times it is applied is large.
- a variable speed pumped-storage generator equipped with a conventional power converter is frequently repaired or replaced. This is not efficient.
- the power generation apparatus of the present embodiment performs on / off control of the self-excited semiconductor elements G1 and G2 almost simultaneously, and exclusively with the on / off control of the self-excited semiconductor elements G1 and G2. , G4 on / off control almost simultaneously, the loads of the elements (for example, the self-excited semiconductor elements G1, G2 and the free-wheeling diodes DF3, DF4) flowing as shown in FIG. 5 become substantially the same. Furthermore, power consumption can be reduced.
- each of these elements is likely to reach the end of its life almost at the same time, and the variable speed pumped water generator equipped with the power conversion device of the present embodiment is efficient, Can be repaired or replaced.
- the embodiment includes a three-level converter that converts an AC voltage of an AC power source into a DC voltage having three levels of first to third potentials. Includes terminals P, C, and N and a terminal X that outputs a DC voltage.
- the terminal C is given an intermediate potential among the first to third potentials, and is sequentially placed between the terminal P and the terminal X.
- Free-flow diodes DF1 and DF2 connected in series in the direction opposite to the direction of current flowing through the self-excited semiconductor elements G1 and G2 between the self-excited semiconductor elements G1 and G2 connected in series and the terminals P and X.
- a coupling diode DC1 whose anode is connected to the terminal C and whose cathode is connected to a connection node between the self-excited semiconductor element G1 and the self-excited semiconductor element G2 and a connection node between the free-wheeling diode DF1 and the free-wheeling diode DF2; And terminal N in order Free-wheeling diodes DF3 and DF4 connected in series in series in the direction opposite to the direction of the current through which self-excited semiconductor elements G3 and G4 conduct between column-connected self-excited semiconductor elements G3 and G4 and terminal X and terminal N And a coupling diode DC2 having a cathode connected to the terminal C and an anode connected to a connection node between the self-excited semiconductor element G3 and the self-excited semiconductor element G4 and a connection node between the free-wheeling diode DF3 and the free-wheeling diode DF4,
- the circuit further includes a control circuit 100 that controls on
- the control circuit 100 When the control signal of the self-excited semiconductor elements G1 and G2 is switched from off control to on control, the control circuit 100 is self-excited semiconductor. After the turn-on time after applying the control voltage to the element G2, the self-excited semiconductor element G1 is turned on to control the self-excited semiconductor elements G1 and G2.
- the control circuit 100 When switching off the control signals from the on-control, the control circuit 100, after self-semiconductor element off time from the application of a control voltage to the G1, off controls the control signal of the self-excited semiconductor device G2.
- the second potential is an intermediate potential lower than the first potential and higher than the third potential, and when the control signal of the self-excited semiconductor elements G3 and G4 is switched from the off control to the on control, the control circuit 100
- the control voltage is applied to the self-excited semiconductor element G3, after the turn-on time, the self-excited semiconductor element G4 is turned on, and the control signal of the self-excited semiconductor elements G3 and G4 is switched from on control to off control.
- the control signal of the self-excited semiconductor element G3 is turned off.
- control signal of the self-excited semiconductor element G3 and the control signal of the self-excited semiconductor element G2 is exclusive.
- control circuit C, N, P, X terminals, C1, C2 smoothing capacitor, DC1, DC2 coupling diode, DF1 to DF4 freewheeling diode, G1 to G4 self-excited semiconductor elements.
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Abstract
Description
(電力変換装置の構成)
図1は、実施の形態にかかる電力変換装置の構成および動作を説明するための図である。図1を参照して、この電力変換装置は、いわゆる3レベル変換器とも呼ばれている。電力変換装置は、自励半導体素子G1~G4と、自励半導体素子G1~G4に逆並列接続される還流ダイオードDF1~DF4と、結合ダイオードDC1,DC2と、直流電圧回路である平滑コンデンサC1,C2とを含む。なお、自励半導体素子としてGCT(Gate Commutated Turn-off)サイリスタ、IGBT(Insulated Gate Bipolar Transistor),MOSFET(Metal-Oxide-Semiconductor Field-Effect Transistor)などゲート信号によってON/OFFを切り替えることができる素子であればよい。
端子P,C,Nは様々な電位を取ることができるが、理解を容易にするために、下記の説明では、端子Cには、中間電位を与えることにする。すなわち、端子Cに与えられる電位は、最も高い電位より低く、最も低い電位より高い中間電位が与えられる。
ここで、本実施の形態の電力変換装置を構成する自励半導体素子G1~G4の具体的な制御信号について検討する。
図6は、直流電圧0Vを出力する場合の自励半導体素子G1~G4の参考例の点弧パターンを示す図である。これは、従来の3レベル変換器で用いられる点弧パターンである。図4の制御信号と比較して、図6の制御信号について説明する。なおこの制御信号が入力される電力変換装置の構成は、図1に示される実施の形態の電力変換装置と同じ構成である。
実施の形態は、図1~図3に示すように、交流電源の交流電圧を、第1~第3の電位の3レベルを有する直流電圧に変換する3レベル変換器を備え、3レベル変換器は、端子P,C,Nと、直流電圧を出力する端子Xとを含み、端子Cは、第1~第3の電位のうち中間電位が与えられ、端子Pと端子Xとの間に順に直列接続された自励半導体素子G1,G2と、端子Pと端子Xとの間に、自励半導体素子G1,G2の導通する電流の向きと逆方向に順に直列接続された還流ダイオードDF1,DF2と、アノードが端子Cに接続され、カソードが自励半導体素子G1と自励半導体素子G2との接続ノードおよび還流ダイオードDF1と還流ダイオードDF2との接続ノードに接続される結合ダイオードDC1と、端子Xと端子Nとの間に順に直列接続された自励半導体素子G3,G4と、端子Xと端子Nとの間に、自励半導体素子G3,G4の導通する電流の向きと逆方向に順に直列接続された還流ダイオードDF3,DF4と、カソードが端子Cに接続され、アノードが自励半導体素子G3と自励半導体素子G4との接続ノードおよび還流ダイオードDF3と還流ダイオードDF4との接続ノードに接続される結合ダイオードDC2とを含み、自励半導体素子G1~G4のオン/オフのスイッチングを制御する制御回路100をさらに備え、自励半導体素子G1,G2の制御信号をオフ制御からオン制御に切替えるときには、制御回路100が自励半導体素子G2に制御電圧を印加してからターンオン時間後に、自励半導体素子G1をオン制御し、自励半導体素子G1,G2の制御信号をオン制御からオフ制御に切替えるときには、制御回路100は、自励半導体素子G1に制御電圧を印加してからターンオフ時間後に、自励半導体素子G2の制御信号をオフ制御する。
Claims (3)
- 交流電源の交流電圧を、第1~第3の電位の3レベルを有する直流電圧に変換する3レベル変換器を備え、
前記3レベル変換器は、
第1~第3の入力端(P,C,N)と、
前記直流電圧を出力する出力端(X)とを含み、
前記第2の入力端(C)は、前記第1~第3の電位のうち中間電位が与えられ、
前記第1の入力端(P)と前記出力端(X)との間に順に直列接続された第1および第2のスイッチング半導体素子(G1,G2)と、
前記第1の入力端(P)と前記出力端(X)との間に、前記第1および第2のスイッチング半導体素子(G1,G2)の導通する電流の向きと逆方向に順に直列接続された第1および第2の還流ダイオード(DF1,DF2)と、
アノードが前記第2の入力端(C)に接続され、カソードが前記第1のスイッチング半導体素子(G1)と前記第2のスイッチング半導体素子(G2)との接続ノードおよび前記第1の還流ダイオード(DF1)と前記第2の還流ダイオード(DF2)との接続ノードに接続される第1の結合ダイオード(DC1)と、
前記出力端(X)と前記第3の入力端(N)との間に順に直列接続された第3および第4のスイッチング半導体素子(G3,G4)と、
前記出力端(X)と前記第3の入力端(N)との間に、前記第3および第4のスイッチング半導体素子(G3,G4)の導通する電流の向きと逆方向に順に直列接続された第3および第4の還流ダイオード(DF3、DF4)と、
カソードが前記第2の入力端(C)に接続され、アノードが前記第3のスイッチング半導体素子(G3)と前記第4のスイッチング半導体素子(G4)との接続ノードおよび前記第3の還流ダイオード(DF3)と前記第4の還流ダイオード(DF3)との接続ノードに接続される第2の結合ダイオード(DC2)とを含み、
前記第1~第4のスイッチング半導体素子(G1~G4)のオン/オフのスイッチングを制御する制御回路(100)とをさらに備え、
前記第1および第2のスイッチング半導体素子(G1,G2)の制御信号をオフ制御からオン制御に切替えるときには、前記制御回路(100)は前記第2のスイッチング半導体素子(G2)に制御電圧を印加してからターンオン時間後に、前記第1のスイッチング半導体素子(G1)をオン制御し、
前記第1および第2のスイッチング半導体素子(G1,G2)の制御信号をオン制御からオフ制御に切替えるときには、前記制御回路(100)は前記第1のスイッチング半導体素子(G1)に制御電圧を印加してからターンオフ時間後に、前記第2のスイッチング半導体素子(G2)の制御信号をオフ制御する、電力変換装置。 - 前記第2の電位は、前記第1の電位より低く、前記第3の電位より高い前記中間電位であり、
前記第3および第4のスイッチング半導体素子(G3,G4)の制御信号をオフ制御からオン制御に切替えるときには、前記制御回路は前記第3のスイッチング半導体素子(G3)に制御電圧を印加してからターンオン時間後に、前記第4のスイッチング半導体素子(G4)をオン制御し、
前記第3および第4のスイッチング半導体素子(G3,G4)の制御信号がオン制御からオフ制御に切替えるときには、前記制御回路は前記第4のスイッチング半導体素子(G4)に制御電圧を印加してからターンオフ時間後に、前記第3のスイッチング半導体素子(G3)の制御信号をオフ制御する、請求の範囲第1項に記載の電力変換装置。 - 前記第3のスイッチング半導体素子(G3)の制御信号と前記第2のスイッチング半導体素子(G2)の制御信号との関係は排他的である、請求の範囲第2項に記載の電力変換装置。
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EP12876328.1A EP2849329B1 (en) | 2012-05-10 | 2012-05-10 | Electric power conversion device |
CN201280073086.XA CN104272574B (zh) | 2012-05-10 | 2012-05-10 | 电力转换装置 |
US14/400,252 US9154049B2 (en) | 2012-05-10 | 2012-05-10 | Power conversion apparatus having a three-level converter that converts AC voltage to DC voltage having three levels |
JP2014514304A JP5823609B2 (ja) | 2012-05-10 | 2012-05-10 | 電力変換装置 |
PCT/JP2012/061995 WO2013168257A1 (ja) | 2012-05-10 | 2012-05-10 | 電力変換装置 |
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US9154049B2 (en) | 2015-10-06 |
EP2849329A1 (en) | 2015-03-18 |
JPWO2013168257A1 (ja) | 2015-12-24 |
CN104272574A (zh) | 2015-01-07 |
JP5823609B2 (ja) | 2015-11-25 |
EP2849329A4 (en) | 2017-03-08 |
US20150124504A1 (en) | 2015-05-07 |
EP2849329B1 (en) | 2019-09-11 |
CN104272574B (zh) | 2017-09-29 |
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