WO2013161462A1 - Dispositif d'éclairage à semi-conducteurs - Google Patents

Dispositif d'éclairage à semi-conducteurs Download PDF

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Publication number
WO2013161462A1
WO2013161462A1 PCT/JP2013/058174 JP2013058174W WO2013161462A1 WO 2013161462 A1 WO2013161462 A1 WO 2013161462A1 JP 2013058174 W JP2013058174 W JP 2013058174W WO 2013161462 A1 WO2013161462 A1 WO 2013161462A1
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Prior art keywords
light
wavelength
laser beams
lighting device
state lighting
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PCT/JP2013/058174
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English (en)
Japanese (ja)
Inventor
善久 池田
順一 木下
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東芝ライテック株式会社
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Publication of WO2013161462A1 publication Critical patent/WO2013161462A1/fr

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0005—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being of the fibre type
    • G02B6/001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being of the fibre type the light being emitted along at least a portion of the lateral surface of the fibre
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
    • F21K9/64—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0003—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being doped with fluorescent agents
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/30—Semiconductor lasers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0005—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being of the fibre type
    • G02B6/0006—Coupling light into the fibre
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0087—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for illuminating phosphorescent or fluorescent materials, e.g. using optical arrangements specifically adapted for guiding or shaping laser beams illuminating these materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms

Definitions

  • Embodiments of the present invention relate to a solid state lighting device.
  • White solid-state lighting (SSL: Solid-State Lighting) devices using solid-state light-emitting elements are mainly LEDs (Light Emitting Diodes).
  • the white light emitting part having a phosphor and the LED chip are often provided close to each other. For this reason, a substrate for heat dissipation and power supply of the LED chip is required.
  • the high-luminance LED has a chip size of 0.5 mm ⁇ 0.5 mm or more, a Lambert distribution, and a wide emission angle. For this reason, light tends to diverge and it is difficult to efficiently irradiate the phosphor layer.
  • High-brightness and high-intensity light sources are necessary for lighting devices such as liquid crystal projectors, searchlights, headlights, stage lighting, and street lamps.
  • lighting devices such as liquid crystal projectors, searchlights, headlights, stage lighting, and street lamps.
  • it is difficult to configure a light emitting unit that is small, light, and has a low calorific value with LEDs.
  • ⁇ ⁇ Provide a solid-state lighting device that emits incoherent light and has improved safety.
  • the solid-state lighting device includes a light source unit, a waveguide, a light guide, a wavelength conversion layer, and an outer tube unit.
  • the light source unit includes a semiconductor laser and a drive circuit that controls the semiconductor laser, and emits a plurality of laser beams in a blue-violet to blue wavelength range.
  • the waveguide guides the plurality of laser beams.
  • the light guide has a first surface and a second surface and a side surface opposite to the first surface, and introduces the plurality of laser beams from the first surface. The light is scattered while being guided toward the surface, and emitted from the side surface.
  • the wavelength conversion layer has an inner edge surrounding the side surface of the light guide and an outer edge opposite to the inner edge, and the phosphor particles are arranged in a dispersed manner.
  • the wavelength conversion layer includes wavelength-converted light emitted from the phosphor particles that have absorbed light emitted from the side surface, and residual light that is not absorbed by the phosphor particles among the light emitted from the side surface. Scattered light generated by multiple scattering is emitted from the outer edge.
  • the outer tube portion is provided so as to surround the outer edge of the wavelength conversion layer, has an outer surface provided with a rough surface, and scatters the scattered light and the wavelength converted light by the rough surface. The mixed light is emitted from the outer surface.
  • a solid state lighting device with improved safety by emitting incoherent light is provided.
  • FIG. 2A is a schematic cross-sectional view along the central axis of the multiple scattering converter
  • FIG. 2B is a schematic cross-sectional view along the line AA
  • FIG. 2C is a partially enlarged wavelength conversion layer.
  • 3A is a schematic diagram for explaining a speckle contrast measurement system
  • FIG. 3B is an emission spectrum diagram of mixed light.
  • FIG. 4A is a photograph of speckle noise generated on the observation surface by coherent light
  • FIG. 4B is a photograph of the observation surface by incoherent light.
  • 5A is a speckle contrast observation surface of a blue LED
  • FIG. 5B is a speckle contrast observation surface of a blue semiconductor laser
  • FIG. 5C is a speckle contrast observation of an illumination device including four semiconductor lasers
  • FIG. 5D is a graph showing a speckle contrast observation surface of an illumination device including 20 semiconductor lasers. It is a graph of the dependence of speckle contrast on operating current.
  • FIG. 7A is a graph of the optical output with respect to the operating current of the blue semiconductor laser
  • FIG. 7B is a graph of the emission spectrum in the low current region
  • FIG. 7C is the emission spectrum in the high current region.
  • FIG. It is a schematic cross section of the solid-state lighting device concerning 2nd Embodiment.
  • FIG. 1 is a schematic perspective view illustrating the configuration of the solid-state lighting device according to the first embodiment.
  • the solid state lighting device includes a light source unit 10, a waveguide 20, a light guide 39, a wavelength conversion layer 32, and an outer tube unit 34.
  • the light source unit 10 is made of a nitride-based semiconductor material, and a plurality of semiconductor lasers 11 that can emit laser light in a blue-violet to blue wavelength range (405 to 490 nm), and a drive that can drive each of the plurality of semiconductor lasers 11.
  • a semiconductor laser (LD: Laser Diode) 11 can be optically coupled to the light guide 20 efficiently.
  • the light emitting point of the end face of the chip of the semiconductor laser 11 has a size of 10 ⁇ m or less, and its radiation angle (beam divergence) is as narrow as about 25 ° ⁇ 40 °.
  • the drive circuit 12 controls the operation mode by changing the voltage or current of the semiconductor laser 11. It can also be controlled to achieve a predetermined light output.
  • the waveguide 20 guides each of the plurality of laser beams G1 toward the light guide 39.
  • the waveguide 20 can be, for example, an optical fiber 24.
  • the optical fiber 24 may be provided for each laser beam or may be common.
  • the light guide 39, the wavelength conversion layer 32, and the outer tube portion 34 constitute a multiple scattering conversion unit 30.
  • the multiple scattering conversion unit 30 scatters the plurality of semiconductor laser beams G1 to generate scattered light, and generates wavelength converted light by the wavelength conversion layer 32 that has absorbed the plurality of semiconductor laser beams G1, and illuminates incoherent light. It can be emitted as light.
  • the multiple scattering conversion unit 30 has a central axis 39d.
  • FIG. 2A is a schematic cross-sectional view along the central axis of the multiple scattering converter
  • FIG. 2B is a schematic cross-sectional view along the line AA
  • FIG. 2C is a partially enlarged wavelength conversion layer. It is a schematic cross section.
  • the light guide 39 has a first surface 39a, a second surface 39b opposite to the first surface 39a, and a side surface 39c.
  • the four laser beams g1 to g4 are incident from the first surface 30a, guided to the second surface 39b, and emitted outward from the side surface 39c.
  • the number of semiconductor lasers 11 is four, but the number of semiconductor lasers 11 is not limited to this. The number of semiconductor lasers 11 will be described in detail later.
  • the wavelength conversion layer 32 has an inner edge 32a surrounding the side surface 39c of the light guide 39, and an outer edge 32b on the side opposite to the inner edge 32a.
  • phosphor particles 32c made of YAG (Yttrium Aluminum Garnet) phosphor or the like are dispersed and arranged.
  • the light emitted from the side surface 39 c of the light guide 39 irradiates the wavelength conversion layer 32.
  • the phosphor particles 32c that have absorbed the irradiation light emit wavelength-converted light gc.
  • the remaining light that is not absorbed by the phosphor particles 32c becomes scattered light gs with reduced coherence by being multiple-reflected or diffused by the phosphor particles 32c in the wavelength conversion layer 32.
  • the light diffusion particles 32d containing a material having a high diffusion transmittance are dispersed and arranged in the wavelength conversion layer 32, the scattering increases and the coherence can be further reduced.
  • the light scattering particles 32d can contain polymethyl methacrylate, calcium carbonate, or the like.
  • the particle diameters of the phosphor particles 32c and the light diffusion particles 32d are equal to or greater than the wavelength, Mie scattering is mainly generated. Further, when the particle diameter is smaller than the wavelength, Rayleigh scattering is mainly generated.
  • incident light is scattered mainly by particles to reduce coherence.
  • the outer tube portion 34 is provided so as to surround the outer edge 32 b of the wavelength conversion layer 32.
  • a rough surface is provided on the outer surface 34 b of the outer pipe portion 34.
  • the wavelength conversion light gc and the scattered light gs are emitted from the outer edge 32 b of the wavelength conversion layer 32 and enter the outer tube portion 34.
  • the scattered light gs and the wavelength converted light gc are scattered by the rough surface and emitted from the outer surface 34b as the mixed light GT.
  • the wavelength conversion layer 32 may be provided on the inner edge 34a of the outer tube portion 34 by coating or the like.
  • the light guide 39 and the outer tube 34 may include glass (including quartz), ceramics, and the like.
  • the surface can be roughened by, for example, frost treatment.
  • the outer tube portion 34 is made of YAG ceramics, it can be made transparent in the ultraviolet to infrared region. Further, the hardness can be increased and the mechanical strength of the lighting device can be increased.
  • ceramics and including Al 2 O 3 or the like of the hexagonal system having the optical anisotropy to an internal or external surface 34b it is possible to further improve the scattering.
  • the solid-state lighting device of the first embodiment can emit a light beam exceeding 1100 lumens with a diameter of several millimeters or less, and can realize a high-intensity, high-intensity white light source.
  • the heat generation region in the multiple scattering conversion layer 30 is only the wavelength conversion layer 32, it can be made small and lightweight.
  • the illumination device using the semiconductor laser 11 is easy to be small, light, and have a low calorific value.
  • safety management in accordance with the provisions of the International Electrotechnical Commission (IEC) is required for devices using laser light.
  • IEC International Electrotechnical Commission
  • FIG. 3A is a schematic diagram for explaining a speckle contrast measurement system
  • FIG. 3B is an emission spectrum diagram of mixed light.
  • the mixed light GT emitted from the outer surface 34 b of the outer tube portion 34 enters the filter 54 that transmits blue-violet to blue light through the slit 52.
  • the light transmitted through the filter 54 is collected by the lens 56 and projected onto the screen 58.
  • the projection on the screen 58 forms an image on a 1/2 inch CCD (Charge Coupled Device) via a pin hole with a diameter of 0.8 mm that allows light with a solid angle of 2 m radians to pass through and a condenser lens 62.
  • speckle refers to a random interference phenomenon that occurs when a scattered light is randomly scattered by a rough object and scattered light from each point overlaps at each point on the observation surface (CCD light receiving surface) ([Non-patent Reference 1]).
  • the emission spectrum of the mixed light GT includes a wavelength in the vicinity of 450 nm and wavelength-converted light having a broad spectrum with a center wavelength of 560 nm.
  • FIG. 4A is a photograph of speckle noise generated on the observation surface by coherent light
  • FIG. 4B is a photograph of the observation surface by incoherent light.
  • Speckle contrast Cs using average intensity E (I) and the standard deviation sigma I, it shall be expressed by Equation (1).
  • the speckle contrast Cs is calculated from equation (1). This makes it possible to evaluate whether the illumination light is closer to the class to which the laser light that is coherent light belongs or the class to which the LED light that is incoherent light belongs.
  • FIG. 5A is a speckle contrast observation surface of a blue LED
  • FIG. 5B is a speckle contrast observation surface of a blue semiconductor laser
  • FIG. 5C is a speckle contrast observation of an illumination device including four semiconductor lasers.
  • FIG. 5D is a graph showing a speckle contrast observation surface of an illumination device including 20 semiconductor lasers.
  • the vertical axis of the three-dimensional display is the relative intensity of speckle contrast Cs. In the two-dimensional display, the relative intensity is planarly displayed.
  • the speckle contrast Cs of the blue LED having a wavelength of 445 nm was 1.8% when the operating current was 0.16A and 1.8% when the operating current was 1A. That is, the speckle contrast Cs is low and the change with respect to the operating current is small.
  • the speckle contrast Cs of the blue semiconductor laser having a wavelength of 455 nm is 83.3% when the operating current is 0.16 A, and the operating current is 1 A (light output is approximately 1.3 W). 27%. That is, it was higher by one digit or more than the speckle contrast Cs of the blue LED. In addition, when the operating current was increased, the speckle contrast could be reduced.
  • the transmission wavelength of the filter 54 is changed within the visible light wavelength range, the speckle contrast Cs can be measured for each visible light component of the mixed light.
  • the speckle contrast Cs is 15.8% when the operating current is 0.16A and 3.4% when the operating current is 1A. there were.
  • the luminous flux was 1100 lumens and the color temperature was 4000K.
  • the speckle contrast Cs is 2.4% when the operating current is 0.16 A and 1.7 when the operating current is 1 A. %Met. That is, when the operating current is 1 A, when the number of semiconductor lasers 11 is increased from 4 to 20, the speckle contrast Cs can be halved.
  • the speckle contrast Cs of the illumination device is substantially the same as that of the LED, and can be said to be incoherent light.
  • the luminous flux was 5000 lumens, and the color temperature was 5000K.
  • the wavelengths of the plurality of laser beams may be substantially the same.
  • the difference between the maximum value and the minimum value of the oscillation longitudinal mode wavelength Can be approximately 15 nm or less.
  • the drive circuit 12 can be easily designed and the price can be reduced.
  • the oscillation longitudinal mode wavelength is represented by a wavelength at which the emission spectrum intensity peaks in a broad emission spectrum.
  • the oscillation longitudinal mode wavelengths of the plurality of semiconductor lasers 11 may be widely distributed in the range of 405 to 490 nm.
  • the difference between the maximum value and the minimum value of the oscillation longitudinal mode wavelength is 50 nm or more, it is easier to reduce the coherence.
  • FIG. 6 is a graph showing the dependence of speckle contrast on the operating current.
  • the vertical axis represents speckle contrast Cs (%), and the horizontal axis represents operating current (A).
  • the speckle contrast Cs of the solid state lighting device (solid line) with 20 semiconductor lasers 11 is substantially equal to the speckle contrast Cs of the LED (dashed line) in the operating current range of 1.2 A or less. Further, the speckle contrast Cs of the solid state lighting device (dot line) having four semiconductor lasers 11 increases and approaches the blue semiconductor laser (chain line).
  • the speckle contrast Cs (chain line) of the semiconductor laser 11 increases at an operating current lower than 0.3A. From FIG. 6, if the maximum value of the speckle contrast Cs is 10% or less, low coherence can be achieved, and safety for human eyes can be ensured.
  • FIG. 7A is a graph of the optical output with respect to the operating current of the blue semiconductor laser
  • FIG. 7B is a graph of the emission spectrum in the low current region
  • FIG. 7C is the emission spectrum in the high current region.
  • FIG. 7B in the region where the operating current is lower than 0.3 A, the longitudinal mode arrangement is close to the single longitudinal mode oscillation, and the emission spectrum has high coherence.
  • FIG. 7C when the operating current is 0.3 A or more, the mode is completely the multi-longitudinal mode, the emission spectrum width is widened, and low coherence is achieved.
  • the drive circuit 12 can achieve low coherence by controlling each semiconductor laser 11 to operate at 0.3 A or more, as shown by a solid line in FIG. Note that the luminance can be controlled by changing the operating current in the range of 0.3 A or more by the drive circuit 12.
  • the speckle contrast Cs when used, the effect of roughening the outer surface 39b of the light guide 39 can be known.
  • the speckle contrast Cs is 13.7%.
  • the speckle contrast Cs can be reduced to 6%. That is, it has been found that YAG ceramics can be easily made to have lower coherence than quartz.
  • FIG. 8 is a schematic cross-sectional view of a solid-state lighting device according to the second embodiment.
  • the solid state lighting device includes a light source unit 10, a waveguide 20, a light guide 39, a wavelength conversion layer 32, and a reflection layer 38.
  • the cross section of the light guide 39 is a rectangle, this invention is not limited to this.
  • the cross section may be a circle, an ellipse, a polygon, or the like.
  • the light guide 39 has a first surface, a second surface opposite to the first surface, an upper surface 39f, and a lower surface 39e opposite to the upper surface 39f.
  • the plurality of laser beams g5 are reflected and scattered inside the light guide 39 while being guided inside the light guide 39, and are mainly emitted from the upper surface 39f and the lower surface 39e.
  • the wavelength conversion layer 32 in which the phosphor particles are dispersedly disposed is provided in contact with the lower surface 39e of the light guide 39.
  • the light emitted from the lower surface 39e irradiates the wavelength conversion layer 32.
  • the phosphor particles 32c that have absorbed the irradiation light emit wavelength-converted light gc.
  • the remaining light that is not absorbed by the phosphor particles 32 c is reflected or diffused by the phosphor particles in the wavelength conversion layer 32 and becomes scattered light gs.
  • the reflective layer 38 reflects the wavelength-converted light gc and the scattered light gs upward. Further, if light diffusing particles containing a material having a high diffusion transmittance are dispersed and arranged in the wavelength conversion layer 32, the coherence can be further reduced.
  • the light guide 39 may include any of glass (including quartz) and ceramics.
  • lighting devices such as LEDs, halogen light bulbs, high intensity light sources such as HID (High Intensity Discharge), and lighting devices such as projectors have large housings due to the heat generated by the light sources.
  • the projector includes a cooling fan and the like, and optical components such as a liquid crystal and a lens, a circuit, and the like are integrally incorporated in the housing. It is also necessary to take measures against heat dissipation from these expensive parts.
  • the exhaust heat from the cooling fan is uncomfortable and the sound of the fan is loud.
  • the solid-state lighting device of the present embodiment emits a light beam exceeding 1100 lumens with a diameter of several millimeters or less, and can realize a high-intensity high-intensity white light source.
  • the heat generating region in the multiple scattering conversion unit 30 is only the phosphor layer 32, and a small and lightweight white light emitting region can be realized.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
  • Planar Illumination Modules (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L'invention porte sur un dispositif d'éclairage à semi-conducteurs, lequel dispositif a une section source de lumière, un guide d'ondes, un corps de guidage de lumière, une section de conversion de longueur d'onde et une section tube externe. La section source de lumière a des lasers à semi-conducteurs et des circuits d'attaque, et émet de multiples faisceaux de laser dans une plage de longueur d'onde du bleu-violet au bleu. Le guide d'ondes guide respectivement les multiples faisceaux de laser. Le corps de guidage de lumière, qui comprend une première surface, une seconde surface et une surface latérale, disperse les multiples faisceaux de laser introduits à travers la première surface tout en guidant les faisceaux de laser vers la seconde surface, et émet la lumière résultante à travers la surface latérale. La couche de conversion de longueur d'onde a un bord interne et un bord externe, et des particules fluorescentes sont réparties d'une manière dispersée à l'intérieur de la couche de conversion de longueur d'onde. La couche de conversion de longueur d'onde émet, à travers le bord externe, la lumière à longueur d'onde convertie et la lumière dispersée qui résulte d'une dispersion multiple d'une lumière résiduelle, ou, autrement dit, d'une partie de la lumière qui est émise à travers la surface latérale sans être absorbée par les particules fluorescentes. La section tube externe est placée de façon à entourer le bord externe de la couche de conversion de longueur d'onde, elle disperse la lumière dispersée et la lumière à longueur d'onde convertie à l'aide d'une surface rugueuse, et elle émet la lumière résultante sous la forme d'une lumière mixte à travers la surface externe de celle-ci.
PCT/JP2013/058174 2012-04-25 2013-03-21 Dispositif d'éclairage à semi-conducteurs WO2013161462A1 (fr)

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JP2012100107A JP2013229174A (ja) 2012-04-25 2012-04-25 固体照明装置
JP2012-100107 2012-04-25

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WO2013161462A1 true WO2013161462A1 (fr) 2013-10-31

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016018744A1 (fr) * 2014-07-28 2016-02-04 Corning Incorporated Système de fibre optique à émission latérale et ensemble doté d'éléments de gaine électroluminescents
US20160327721A1 (en) * 2015-05-04 2016-11-10 Corning Incorporated Optical fiber lighting device and method
CN109915789A (zh) * 2019-04-09 2019-06-21 浙江光塔节能科技有限公司 一种无眩光照明灯
CN110277729A (zh) * 2018-03-15 2019-09-24 丰田合成株式会社 发光装置
WO2020052399A1 (fr) * 2018-09-14 2020-03-19 深圳市绎立锐光科技开发有限公司 Dispositif source de lumière et feu de véhicule
WO2021228660A1 (fr) * 2020-05-12 2021-11-18 Osram Opto Semiconductors Gmbh Composant à lasers à semi-conducteur et procédé pour faire fonctionner au moins un laser à semi-conducteur

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6547997B2 (ja) * 2014-12-24 2019-07-24 スタンレー電気株式会社 車両用灯具
WO2018042826A1 (fr) 2016-08-30 2018-03-08 パナソニックＩｐマネジメント株式会社 Élément de conversion de couleur et dispositif d'éclairage
JP6658436B2 (ja) 2016-09-30 2020-03-04 日亜化学工業株式会社 照明装置
JP6686836B2 (ja) 2016-10-14 2020-04-22 日亜化学工業株式会社 照明装置
JP7502611B2 (ja) 2020-04-15 2024-06-19 日亜化学工業株式会社 樹脂含浸方法、波長変換モジュールの製造方法及び波長変換モジュール

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11153794A (ja) * 1997-11-20 1999-06-08 Hitachi Ltd 液晶表示装置
JP2004341128A (ja) * 2003-05-14 2004-12-02 Sharp Corp 発光体とそれを含む照明装置および表示装置
JP2007294754A (ja) * 2006-04-26 2007-11-08 Sharp Corp 発光装置および車両用ヘッドランプ
WO2008029892A1 (fr) * 2006-09-07 2008-03-13 Panasonic Corporation Source de lumière laser, source de lumière plane et composant d'affichage à cristaux liquides
JP2009016289A (ja) * 2007-07-09 2009-01-22 Sony Corp 光源装置及び光学装置
JP2011171261A (ja) * 2010-02-22 2011-09-01 Mabuchi Shomei Seisakusho:Kk ポール型ライト
JP2011187285A (ja) * 2010-03-08 2011-09-22 Toshiba Corp 発光装置
WO2012017613A1 (fr) * 2010-08-03 2012-02-09 三菱電機株式会社 Appareil de source lumineuse de surface et appareil d'affichage à cristaux liquides

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11153794A (ja) * 1997-11-20 1999-06-08 Hitachi Ltd 液晶表示装置
JP2004341128A (ja) * 2003-05-14 2004-12-02 Sharp Corp 発光体とそれを含む照明装置および表示装置
JP2007294754A (ja) * 2006-04-26 2007-11-08 Sharp Corp 発光装置および車両用ヘッドランプ
WO2008029892A1 (fr) * 2006-09-07 2008-03-13 Panasonic Corporation Source de lumière laser, source de lumière plane et composant d'affichage à cristaux liquides
JP2009016289A (ja) * 2007-07-09 2009-01-22 Sony Corp 光源装置及び光学装置
JP2011171261A (ja) * 2010-02-22 2011-09-01 Mabuchi Shomei Seisakusho:Kk ポール型ライト
JP2011187285A (ja) * 2010-03-08 2011-09-22 Toshiba Corp 発光装置
WO2012017613A1 (fr) * 2010-08-03 2012-02-09 三菱電機株式会社 Appareil de source lumineuse de surface et appareil d'affichage à cristaux liquides

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016018744A1 (fr) * 2014-07-28 2016-02-04 Corning Incorporated Système de fibre optique à émission latérale et ensemble doté d'éléments de gaine électroluminescents
US9857515B2 (en) 2014-07-28 2018-01-02 Corning Incorporated Side-emitting optical fiber system and assembly with light-emitting jacket members
US20160327721A1 (en) * 2015-05-04 2016-11-10 Corning Incorporated Optical fiber lighting device and method
CN110277729A (zh) * 2018-03-15 2019-09-24 丰田合成株式会社 发光装置
CN110277729B (zh) * 2018-03-15 2021-06-25 丰田合成株式会社 发光装置
WO2020052399A1 (fr) * 2018-09-14 2020-03-19 深圳市绎立锐光科技开发有限公司 Dispositif source de lumière et feu de véhicule
CN109915789A (zh) * 2019-04-09 2019-06-21 浙江光塔节能科技有限公司 一种无眩光照明灯
WO2021228660A1 (fr) * 2020-05-12 2021-11-18 Osram Opto Semiconductors Gmbh Composant à lasers à semi-conducteur et procédé pour faire fonctionner au moins un laser à semi-conducteur

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