WO2013157816A1 - 나노 급 패턴이 형성된 고효율 질화물계 발광다이오드용 기판의 제조방법 - Google Patents
나노 급 패턴이 형성된 고효율 질화물계 발광다이오드용 기판의 제조방법 Download PDFInfo
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- WO2013157816A1 WO2013157816A1 PCT/KR2013/003186 KR2013003186W WO2013157816A1 WO 2013157816 A1 WO2013157816 A1 WO 2013157816A1 KR 2013003186 W KR2013003186 W KR 2013003186W WO 2013157816 A1 WO2013157816 A1 WO 2013157816A1
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- 239000000758 substrate Substances 0.000 title claims abstract description 72
- 238000000034 method Methods 0.000 title claims abstract description 27
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 claims abstract description 28
- 238000000605 extraction Methods 0.000 claims abstract description 17
- 229910002601 GaN Inorganic materials 0.000 claims description 19
- 239000010409 thin film Substances 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052594 sapphire Inorganic materials 0.000 claims description 9
- 239000010980 sapphire Substances 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 7
- 239000010453 quartz Substances 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- 229910017083 AlN Inorganic materials 0.000 claims description 3
- -1 Si 3 N 4 Substances 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 7
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000004593 Epoxy Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 239000004038 photonic crystal Substances 0.000 description 2
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 1
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229920005570 flexible polymer Polymers 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 230000010076 replication Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
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- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
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- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
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- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Definitions
- the substrate is any one selected from the group consisting of a sapphire substrate, a silicon substrate and a quartz substrate, and made of Al 2 O 3 , SiC, Si, SiO 2 , quartz, AlN, GaN, Si 3 N 4, and MgO. It may include any one selected from the group.
- the nanopattern when the nanopattern is composed of a three-dimensional shape with regularity, lattice mismatch of the GaN layer formed on the substrate can be reduced, thereby reducing internal treading dislocation density and increasing internal quantum efficiency.
- the light extraction efficiency improvement value may appear somewhat depending on the shape of the pattern, thereby improving the low light extraction efficiency due to the diffuse reflection inside the diode.
- the light emitting diode including the light emitting diode substrate has a warpage phenomenon by lowering the residual stress after forming the GaN film including the buffer layer even if the size of the substrate is widened by the regular nano pattern structure and the GaN buffer layer formed thereon. You can prevent it.
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- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
Description
Claims (3)
- 기판의 일면(一面) 또는 나노 몰드의 일면(一面)에 내식각성 레지스트 박막을 형성하는 제1단계,상기 내식각성 레지스트 박막과 마주보도록, 나노 몰드 또는 기판을 위치시키고 가압하여 상기 기판 상에 나노 패턴을 가진 내식각성 레지스트 박막을 형성하는 제2단계,상기 나노 패턴이 형성된 기판을 식각하는 제3단계, 그리고상기 식각된 기판을 어닐링 하는 제4단계를 포함하고,상기 나노 패턴은 바닥부와 볼록부를 포함하고, 상기 볼록부의 하단직경은 발광다이오드의 발광 파장의 0.1 내지 3배인 것이고,상기 나노 패턴은 바닥부와 볼록부가 교대로 형성되어 있고, 제1볼록부와 상기 제1볼록부에 이웃하는 제2볼록부와의 거리가 발광다이오드의 발광 파장의 0.2 내지 6배인 것이며,상기 나노 패턴은 반구형, 삼각뿔형, 사각뿔형, 육각뿔형, 원뿔형 및 잘린구형으로 이루어진 군에서 선택된 어느 하나를 반복적으로 포함하는 것인 나노 급 패턴이 형성된 고효율 질화물계 발광다이오드용 기판의 제조방법.
- 제1항에 있어서,상기 질화물계 발광다이오드용 기판의 제조방법은, 상기 제4단계 이후에 상기 어닐링된 기판에 GaN층으로 이루어진 버퍼층을 더 형성하는 제5단계를 더 포함하여 발광 다이오드의 광추출 효율을 향상시킨 것인 나노 급 패턴이 형성된 고효율 질화물계 발광다이오드용 기판의 제조방법.
- 제 1항에 있어서,상기 기판은 사파이어 기판, 실리콘 기판 및 쿼츠 기판으로 이루어진 군에서 선택된 어느 하나인 것으로, Al2O3, SiC, Si, SiO2, 쿼츠 (Quartz), AlN, GaN, Si3N4 및 MgO로 이루어진 군에서 선택된 어느 하나를 포함하는 것인 나노 급 패턴이 형성된 고효율 질화물계 발광다이오드용 기판의 제조방법.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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US14/394,474 US20150064821A1 (en) | 2012-04-18 | 2013-04-16 | Method for fabricating nano-patterned substrate for high-efficiency nitride-based light-emitting diode |
CN201380020419.7A CN104221169A (zh) | 2012-04-18 | 2013-04-16 | 制造供高效率氮化物发光二极体用的纳米图案化基材的方法 |
EP13777801.5A EP2840618A4 (en) | 2012-04-18 | 2013-04-16 | METHOD FOR MANUFACTURING NANOMOTIVE SUBSTRATE FOR HIGH-PERFORMANCE, NITRIDE-BASED LIGHT EMITTING DIODE |
JP2015506889A JP2015515145A (ja) | 2012-04-18 | 2013-04-16 | ナノレベルのパターンが形成された高効率窒化物系発光ダイオード用基板の製造方法(MethodForFabricatingNanoPatternedSubstrateForHighEfficiencyNitridebasedLightEmittingDiode) |
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KR10-2012-0040150 | 2012-04-18 | ||
KR1020120040150A KR101233062B1 (ko) | 2012-04-18 | 2012-04-18 | 나노 급 패턴이 형성된 고효율 질화물계 발광다이오드용 기판의 제조방법 |
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PCT/KR2013/003186 WO2013157816A1 (ko) | 2012-04-18 | 2013-04-16 | 나노 급 패턴이 형성된 고효율 질화물계 발광다이오드용 기판의 제조방법 |
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US (1) | US20150064821A1 (ko) |
EP (1) | EP2840618A4 (ko) |
JP (1) | JP2015515145A (ko) |
KR (1) | KR101233062B1 (ko) |
CN (1) | CN104221169A (ko) |
TW (1) | TW201405866A (ko) |
WO (1) | WO2013157816A1 (ko) |
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CN104218132A (zh) * | 2013-05-29 | 2014-12-17 | 苏州新纳晶光电有限公司 | 一种氮化镓图形衬底的制备方法 |
KR101436743B1 (ko) | 2013-06-20 | 2014-09-02 | 고려대학교 산학협력단 | 수직형 발광 소자의 제조 방법 |
TWI560141B (en) * | 2014-11-21 | 2016-12-01 | Force Prec Instr Co Ltd | Micro/nano-molding template and method of forming micro-structure on substrate by use of such micor/nano-molding template |
EP3298181A1 (de) | 2015-05-21 | 2018-03-28 | EV Group E. Thallner GmbH | Verfahren zur aufbringung einer überwuchsschicht auf eine keimschicht |
KR102382440B1 (ko) | 2015-06-22 | 2022-04-05 | 삼성전자주식회사 | 반도체 발광소자 |
JP6841198B2 (ja) * | 2017-09-28 | 2021-03-10 | 豊田合成株式会社 | 発光素子の製造方法 |
CN110517949B (zh) * | 2019-07-29 | 2021-05-11 | 太原理工大学 | 一种利用SiO2作为衬底制备非极性a面GaN外延层的方法 |
CN114068779B (zh) * | 2021-11-16 | 2024-04-12 | 黄山博蓝特光电技术有限公司 | 应用于直下式背光led芯片的复合型衬底及其制备方法 |
CN115172554B (zh) * | 2022-09-02 | 2022-11-18 | 元旭半导体科技股份有限公司 | 一种高亮度的纳米图形衬底结构的制备方法 |
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- 2013-04-16 EP EP13777801.5A patent/EP2840618A4/en not_active Withdrawn
- 2013-04-16 JP JP2015506889A patent/JP2015515145A/ja active Pending
- 2013-04-16 CN CN201380020419.7A patent/CN104221169A/zh active Pending
- 2013-04-16 WO PCT/KR2013/003186 patent/WO2013157816A1/ko active Application Filing
- 2013-04-17 TW TW102113589A patent/TW201405866A/zh unknown
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KR20100011835A (ko) * | 2008-07-25 | 2010-02-03 | 이헌 | 고효율 발광 다이오드용 기판의 제조방법 |
Also Published As
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EP2840618A4 (en) | 2015-05-06 |
KR101233062B1 (ko) | 2013-02-19 |
CN104221169A (zh) | 2014-12-17 |
JP2015515145A (ja) | 2015-05-21 |
TW201405866A (zh) | 2014-02-01 |
EP2840618A1 (en) | 2015-02-25 |
US20150064821A1 (en) | 2015-03-05 |
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