WO2013152533A1 - 液晶面板及其制作方法 - Google Patents

液晶面板及其制作方法 Download PDF

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Publication number
WO2013152533A1
WO2013152533A1 PCT/CN2012/074821 CN2012074821W WO2013152533A1 WO 2013152533 A1 WO2013152533 A1 WO 2013152533A1 CN 2012074821 W CN2012074821 W CN 2012074821W WO 2013152533 A1 WO2013152533 A1 WO 2013152533A1
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WIPO (PCT)
Prior art keywords
substrate
retaining wall
liquid crystal
cutting edge
crystal panel
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PCT/CN2012/074821
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English (en)
French (fr)
Inventor
赵国栋
宋涛
马涛
刘明
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深圳市华星光电技术有限公司
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Application filed by 深圳市华星光电技术有限公司 filed Critical 深圳市华星光电技术有限公司
Priority to US13/519,908 priority Critical patent/US8786817B2/en
Publication of WO2013152533A1 publication Critical patent/WO2013152533A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/28—Adhesive materials or arrangements

Definitions

  • the present invention relates to the field of liquid crystal panels, and in particular, to a liquid crystal panel and a method of fabricating the same.
  • ODF One Drip
  • the liquid crystal is dripped on a substrate, and the frame glue is coated on another substrate, and then the two substrates are vacuum-bonded, and then the frame glue is cured by ultraviolet, high temperature and other curing processes. Finally cut.
  • the sealant is pre-coated on the substrate. As shown in FIG.
  • FIG. 1 which is a schematic plan view of a liquid crystal panel 100 in the prior art, a black matrix 102 is disposed around the display area 101 , and a sealant 103 is disposed on the black matrix 102 and distributed on the periphery of the display area 101 ; A cutting line 104 surrounds the black matrix 102.
  • the main object of the present invention is to provide a liquid crystal panel, which aims to improve the coating precision of the sealant and further improve the utilization rate of the liquid crystal panel.
  • the present invention provides a liquid crystal panel comprising a substrate and a liquid crystal layer, the substrate having a frame glue bonding area and a cutting edge located outside the frame glue bonding area, the frame glue bonding area and the cutting edge A retaining wall is provided, and the height of the retaining wall is smaller than the thickness of the liquid crystal layer.
  • the substrate comprises a TFT substrate and a CF substrate
  • the retaining wall comprises a first retaining wall and a second retaining wall
  • the first retaining wall is disposed on the TFT substrate
  • the second retaining wall is disposed on the CF substrate
  • the width of the first retaining wall and the second retaining wall is 30-50 um.
  • the heights of the first retaining wall and the second retaining wall are both greater than one-half of the thickness of the liquid crystal layer, the first retaining wall is offset from the second retaining wall; or the first retaining wall is The height of the second retaining wall is less than one-half of the thickness of the liquid crystal layer, and the first retaining wall and the second retaining wall are disposed opposite to each other.
  • the substrate is a TFT substrate
  • the TFT substrate includes a TFT array layer and a peripheral line
  • the sealant bonding area is located in the peripheral line area
  • the retaining wall is disposed on the peripheral line.
  • the substrate is a CF substrate
  • the CF substrate has a color filter layer and a light shielding layer
  • the sealant bonding area is located in the light shielding layer region
  • the retaining wall is disposed on the light shielding layer.
  • the present invention also provides a liquid crystal panel, the liquid crystal panel comprising a substrate having a sealant-bonding area and a cutting edge located outside the sealant-bonding area, between the sealant-bonding area and the cutting edge Set with a retaining wall.
  • the substrate comprises a TFT substrate and a CF substrate
  • the retaining wall comprises a first retaining wall and a second retaining wall
  • the first retaining wall is disposed on the TFT substrate
  • the second retaining wall is disposed on the CF substrate on.
  • the liquid crystal panel further includes a liquid crystal layer, and the heights of the first and second retaining walls are both greater than one-half of the thickness of the liquid crystal layer and smaller than the thickness of the liquid crystal layer, and the first retaining wall The second retaining wall is misaligned.
  • the liquid crystal panel further includes a liquid crystal layer, the heights of the first and second retaining walls are less than one-half of the thickness of the liquid crystal layer and less than the thickness of the liquid crystal layer, and the first retaining wall The second retaining wall is facing the setting.
  • the substrate is a TFT substrate
  • the TFT substrate includes a TFT array layer and a peripheral line
  • the sealant bonding area is located in the peripheral line area
  • the retaining wall is disposed on the peripheral line.
  • the liquid crystal panel further includes a liquid crystal layer, the height of the retaining wall is smaller than the thickness of the liquid crystal layer, and the width of the retaining wall is 30-50 um.
  • the substrate is a CF substrate
  • the CF substrate has a color filter layer and a light shielding layer
  • the sealant bonding area is located in the light shielding layer region
  • the retaining wall is disposed on the light shielding layer.
  • the liquid crystal panel further includes a liquid crystal layer, the height of the retaining wall is smaller than the thickness of the liquid crystal layer, and the width of the retaining wall is 30-50 um.
  • the invention also provides a method for manufacturing a liquid crystal panel, comprising the following steps:
  • a retaining wall is formed between the sealant bonding area and the cutting edge.
  • the substrate comprises a TFT substrate
  • the TFT substrate comprises a first substrate
  • the first substrate has a cutting edge
  • the forming a retaining wall in a region between the sealant-bonding region and the cutting edge comprises:
  • the substrate further includes a CF substrate, the CF substrate includes a second substrate, the second substrate has a cutting edge, and the retaining wall is formed in a region between the sealant-bonding region and the cutting edge include:
  • the substrate comprises a TFT substrate
  • the TFT substrate comprises a first substrate
  • the first substrate has a cutting edge
  • the forming a retaining wall in a region between the sealant-bonding region and the cutting edge comprises:
  • TFT array layer Forming a TFT array layer, a peripheral line, and a retaining wall on the first substrate, wherein the peripheral line region has a first sealant bonding area, and the retaining wall is disposed in the first sealant bonding area and Between the edges of the cut.
  • the substrate comprises a CF substrate
  • the CF substrate comprises a second substrate
  • the second substrate has a cutting edge
  • the forming a retaining wall in a region between the sealant-bonding region and the cutting edge comprises:
  • the light shielding layer region has a second sealant bonding area, and the retaining wall is formed Between the second sealant bonding area and the cut edge of the second substrate.
  • the invention provides a retaining wall between the frame glue bonding area and the cutting edge, so that the TFT substrate and the CF substrate can prevent the uncured frame glue from flowing to the cutting edge and the process of the liquid crystal panel during the bonding process.
  • the effect is reduced, thereby reducing the distance between the glue-bonding area and the cutting edge, which not only improves the coating precision of the sealant, but also improves the utilization rate of the substrate.
  • FIG. 1 is a schematic plan view of a liquid crystal panel in the prior art
  • FIG. 2 is a schematic plan view of a liquid crystal panel of the present invention
  • Figure 3 is a cross-sectional view showing a first embodiment of the liquid crystal panel of the present invention.
  • Figure 4 is a cross-sectional view showing a second embodiment of the liquid crystal panel of the present invention.
  • Figure 5 is a cross-sectional view showing a third embodiment of the liquid crystal panel of the present invention.
  • FIG. 6 is a schematic flow chart of a method of fabricating a liquid crystal panel of the present invention.
  • the liquid crystal panel includes a substrate having a sealant-bonding area 10 and a cutting edge 30 at the periphery of the sealant-bonding area 10, and the sealant-bonding area 10 is used for coating a sealant (not shown) or
  • the frame glue is adhered, the frame glue is disposed in the frame glue bonding area 10, and the retaining wall 20 is formed in a region between the frame glue bonding area 10 and the panel cutting edge 30.
  • the uncured sealant disposed in the sealant bonding area 10 can be prevented from flowing to the cutting edge 30, thereby affecting the process of the liquid crystal panel, thereby reducing the effect.
  • the distance between the sealant bonding area 10 and the cutting edge 30 not only improves the coating precision of the sealant, but also improves the utilization rate of the substrate.
  • the liquid crystal panel includes a TFT substrate 1 and a CF substrate 2, and a liquid crystal layer 3 and a sealant 4 which are provided between the TFT substrate 1 and the CF substrate 2.
  • the CF substrate 2 has a second substrate 24, and the second substrate 24 has a color filter layer 21, a light shielding layer 22 and a second sealant bonding area 23, and the second frame adhesive bonding area 23 is located in the light shielding layer.
  • the TFT substrate 1 includes a first substrate 14 having a TFT array 11, a peripheral line 12, and a first sealant bonding region 13 disposed in the area of the peripheral line 12.
  • a retaining wall 20 is formed between the first sealant bonding area 13 and the cutting edge 30, and the retaining wall 20 is disposed on the peripheral line 12.
  • the sealant 4 is disposed on the first sealant bonding area 13 and the second sealant bonding area 23 to bond the TFT substrate 1 and the CF substrate 2, and the retaining wall 20 is disposed on the sealant The outer side of 4.
  • a black film is applied to the first substrate 14, and exposed, developed, or the like is formed to form the retaining wall 20.
  • the retaining wall 20 may be formed simultaneously with the formation of the TFT array layer 11 and the peripheral line 12.
  • the retaining wall 20 is composed of a metal material, an insulating material, or the like, and the structure of the TFT array layer 11 and The composition is the same.
  • the retaining wall 20 restricts the flow of the uncured sealant 4 and has a height smaller than the thickness of the liquid crystal layer 3, and the width of the retaining wall 20 is 30-50 um.
  • the frame glue 4 is restrained in the retaining wall 20 during the bonding process of the TFT substrate 1 and the CF substrate 2, so that the distance L between the sealant 4 and the cutting edge 30 can be shortened, not only improved
  • the coating precision of the sealant 4 is also improved, and the utilization rate of the substrate is also improved.
  • the liquid crystal panel includes a TFT substrate 1 and a CF substrate 2, and a liquid crystal layer 3 and a sealant 4 which are provided between the TFT substrate 1 and the CF substrate 2.
  • the difference between this embodiment and the first embodiment is that the retaining wall 20 is disposed on the light shielding layer 21 of the CF substrate 2, and the retaining wall 20 is located in the second sealant bonding area 23 and the cutting edge 30. between.
  • the manufacturing process of the retaining wall 20 of the CF substrate 2 may include: coating a black film on the second substrate 24, exposing and developing the black film to form the light shielding layer 21 and the retaining wall 20, and the material and the light blocking of the retaining wall 20 at this time Layer 21 has the same material.
  • the retaining wall 20 may also be formed on the second substrate 24 while forming a color filter layer 22 or a spacer (not shown).
  • the material of the retaining wall 20 may be It is one of a color resist material and a spacer material of the color filter layer 22, or a combination of plural kinds.
  • the retaining wall 20 limits the flow of the uncured sealant 4 and has a height smaller than the thickness of the liquid crystal layer 3, which has a width of 30-50 um.
  • the frame adhesive 4 can be restrained in the retaining wall 20 during the bonding process of the TFT substrate and the CF substrate, so the distance between the outer edge of the sealant 4 and the cutting edge 30 of the liquid crystal panel is L. It can be shortened, which not only improves the coating precision of the sealant 4, but also improves the utilization rate of the substrate.
  • FIG. 5 there is shown a cross-sectional view of a third embodiment of a liquid crystal panel of the present invention.
  • the liquid crystal panel includes a TFT substrate 1 and a CF substrate 2, and a liquid crystal layer 3 and a sealant 4 which are provided between the TFT substrate 1 and the CF substrate 2.
  • the retaining wall 20 includes a first retaining wall 201 and a second retaining wall 202.
  • the first retaining wall 201 is disposed on the TFT substrate 1.
  • the second retaining wall 202 is disposed on the CF substrate 2, and the heights of the first retaining wall 201 and the second retaining wall 202 are both greater than one-half of the thickness of the liquid crystal layer 3 and smaller than the thickness of the liquid crystal layer 3, and the first block
  • the width of the wall 201 and the second retaining wall 202 is between 30 and 50 um.
  • the heights of the first and second retaining walls 201 and 202 may be less than one-half of the thickness of the liquid crystal layer 3, and when the TFT substrate 1 and the CF substrate 2 are bonded together, A retaining wall 201 and a second retaining wall 202 can be disposed opposite each other.
  • the structure of the first retaining wall 201 and the structure of the second retaining wall 202 can be referred to the previous embodiment, and details are not described herein again.
  • FIG. 6 is a schematic flow chart of a method for fabricating a liquid crystal panel according to the present invention.
  • the manufacturing method of the liquid crystal panel includes:
  • Step S101 providing a substrate having a sealant bonding area 10 and a cutting edge 30 located at the periphery of the sealant bonding area 10;
  • Step S102 forming a retaining wall 20 between the sealant bonding area 10 and the cutting edge 30.
  • the present invention provides a retaining wall 20 between the sealant bonding area 10 and the cutting edge 30, so that the liquid crystal panel can prevent the sealant from flowing to the cutting edge 30 during the bonding process, thereby causing the process of the liquid crystal panel.
  • the effect is to narrow the distance between the glue-bonding area 10 and the cutting edge 30, which not only improves the coating precision of the sealant, but also improves the utilization rate of the substrate.
  • the substrate is a TFT substrate 1, and the TFT substrate 1 has a cutting edge 30 as shown in FIG.
  • the TFT substrate 1 includes a first substrate 14.
  • the manufacturing method of the liquid crystal panel is:
  • A1 a TFT array layer 11 and a peripheral line 12 are formed on the first substrate 14, the peripheral line 12 has a first sealant bonding area 13;
  • the TFT array layer 11 and the peripheral lines 12 are formed on the first substrate 14 by processes such as film formation, photoresisting, exposure, development, etching, and photoresist removal.
  • a retaining wall 20 is formed between the first sealant bonding area 13 and the cutting edge 30.
  • a black film is coated on the first substrate 14, and exposed, developed, etc., to form the retaining wall 20 on the TFT substrate 1, and the retaining wall 20 is located on the peripheral line 12.
  • the substrate is a TFT substrate 1, and the TFT substrate 1 has a dicing edge 30.
  • the difference between the present embodiment and the first embodiment is that the TFT array layer 11 and the peripheral line 12 are formed on the first substrate 14 by a process of film formation, photoresisting, exposure, development, etching, photoresist removal, etc., while forming the block.
  • the peripheral line 12 has a first sealant bonding area 13; the retaining wall 20 is disposed between the first sealant bonding area 13 and the cutting edge 30.
  • the retaining wall 20 restricts the flow of the uncured sealant 4 and has a height smaller than the thickness of the liquid crystal layer 3, and the width of the retaining wall 20 is 30-50 um.
  • the frame glue 4 is restrained in the retaining wall 20 during the bonding process of the TFT substrate 1 and the CF substrate 2, so that the distance L between the sealant 4 and the cutting edge 30 can be shortened, not only improved
  • the coating precision of the sealant 4 is also improved, and the utilization rate of the substrate is also improved.
  • the substrate is a CF substrate 2 having a second substrate 24, and the second substrate 24 also has a cutting edge 30.
  • the manufacturing method of the CF substrate 2 is as follows:
  • a black film is coated on the second substrate 24, and exposed and developed to form the light shielding layer 21 and the retaining wall 20.
  • a second sealant bonding area 23 is formed in the area of the light shielding layer 21, and the retaining wall 20 is formed between the second sealant bonding area 23 and the cutting edge 30, and is located on the light shielding layer 21.
  • a color filter layer 22 is formed on the substrate 24.
  • the retaining wall 20 may be formed while forming a color filter layer 22 or a spacer (not shown) on the CF substrate.
  • the material of the retaining wall 20 may be a color filter.
  • the retaining wall 20 limits the flow of the uncured sealant 4 and has a height smaller than the thickness of the liquid crystal layer 3, which has a width of 30-50 um.
  • the frame adhesive 4 can be restrained in the retaining wall 20 during the bonding process of the TFT substrate and the CF substrate, so the distance between the outer edge of the sealant 4 and the cutting edge 30 of the liquid crystal panel is L. It can be shortened, which not only improves the coating precision of the sealant 4, but also improves the utilization rate of the substrate.
  • the substrate includes a TFT substrate 1 and a CF substrate 2.
  • the barrier wall 20 includes a first barrier wall 201 formed on the TFT substrate 1 and The second retaining wall 202 is formed on the CF substrate 2.
  • the heights of the first retaining wall 211 and the second retaining wall 212 are both greater than one-half of the thickness of the liquid crystal layer and less than the thickness of the liquid crystal layer, and the first retaining wall 201 and the second retaining wall 202 are disposed in a staggered manner.
  • the width of the first retaining wall 21 and the second retaining wall 22 is between 30-50 um.
  • the heights of the first and second retaining walls 201 and 202 may be less than one-half of the thickness of the liquid crystal layer 3, and when the TFT substrate 1 and the CF substrate 2 are bonded together, A retaining wall 201 and a second retaining wall 202 can be disposed opposite each other.
  • the process of the first retaining wall 201 and the process of the second retaining wall 202 can be referred to the above embodiments, and will not be described again.

Abstract

一种液晶面板及其制作方法，该液晶面板包括基板（1，2）及液晶层（3），所述基板（1，2）具有框胶贴合区（10）及位于框胶贴合区（10）外侧的切割边缘（30），所述框胶贴合区（10）与切割边缘（30）之间设置挡墙（20），且该挡墙（20）的高度小于液晶层（3）的厚度。通过在框胶涂布位置的外边缘设置挡墙（20），使得TFT基板（1）及CF基板（2）在贴合的过程中，挡墙（20）可以防止未固化的框胶溢出至面板的切割边缘（30）而对面板的制程造成影响，从而缩小了框胶外边缘与面板切割边缘（30）之间的距离，不但提高了面板的利用率，而且还提高了框胶的涂布精度。

Description

液晶面板及其制作方法
技术领域
本发明涉及液晶面板领域，尤其涉及一种液晶面板及其制作方法。
背景技术
目前，在高世代的液晶面板的制作工艺中，通常采用ODF（One Drip Fill，液晶滴注）技术将液晶滴注在一基板，并将框胶涂布在另一基板上，然后将两基板进行真空贴合，再经过紫外、高温等固化工艺对框胶进行固化，最后进行切割。在液晶面板的制作工艺中，框胶被预先涂布在基板上。如图1所示，其为现有技术中液晶面板100的平面示意图，黑矩阵102设置在显示区101的四周，而框胶103设置在黑矩阵102上，并分布于显示区101的外围；切割线104围绕所述黑矩阵102。
在现有制作工艺过程中，由于框胶涂布机台的涂布精度较差，通常只有±200um左右，且在框胶涂布首尾结合处的框胶宽幅较难控制，所以为防止未固化的框胶流到切割位置对面板切割制程造成影响，必须在框胶103的边缘和切割线104预留较大的距离L。如此，造成了切割后液晶面板100的显示区101所占的比例有限，将不利于轻薄液晶面板的生产，也造成了基板的浪费。
发明内容
本发明的主要目的是提供一种液晶面板，旨在提高框胶的涂布精度，进一步提高液晶面板的利用率。
本发明提供了一种液晶面板，该液晶面板包括基板及液晶层，所述基板具有框胶贴合区及位于框胶贴合区外侧的切割边缘，所述框胶贴合区与切割边缘之间设置挡墙，且该挡墙的高度小于液晶层的厚度。
优选地，所述基板包括TFT基板及CF基板，所述挡墙包括第一挡墙及第二挡墙，所述第一挡墙设置在TFT基板上，所述第二挡墙设置在CF基板上，且所述第一挡墙与第二挡墙的宽度和为30-50um。
优选地，所述第一挡墙与第二挡墙的高度均大于液晶层的厚度的二分之一，所述第一挡墙与第二挡墙错位设置；或所述第一挡墙与第二挡墙的高度均小于液晶层的厚度的二分之一，所述第一挡墙与第二挡墙正对设置。
优选地，所述基板为TFT基板，所述TFT基板包括TFT阵列层及外围线路，所述框胶贴合区位于所述外围线路区域内，所述挡墙设置在所述外围线路上。
优选地，所述基板为CF基板，所述CF基板具有彩色滤光层及遮光层，所述框胶贴合区位于遮光层区域内，所述挡墙设置在所述遮光层上。
本发明还提供了一种液晶面板，所述液晶面板包括基板，所述基板具有框胶贴合区及位于框胶贴合区外侧的切割边缘，所述框胶贴合区与切割边缘之间设置有挡墙。
优选地，所述基板包括TFT基板及CF基板，所述挡墙包括第一挡墙及第二挡墙，所述第一挡墙设置在TFT基板上，所述第二挡墙设置在CF基板上。
优选地，所述液晶面板还包括液晶层，所述第一挡墙与第二挡墙的高度均大于液晶层的厚度的二分之一且小于液晶层的厚度，所述第一挡墙与第二挡墙错位设置。
优选地，所述液晶面板还包括液晶层，所述第一挡墙与第二挡墙的高度均小于液晶层的厚度的二分之一且小于液晶层的厚度，所述第一挡墙与第二挡墙正对设置。
优选地，所述基板为TFT基板，所述TFT基板包括TFT阵列层及外围线路，所述框胶贴合区位于所述外围线路区域内，所述挡墙设置在所述外围线路上。
优选地，所述液晶面板还包括液晶层，所述挡墙的高度小于液晶层的厚度, 所述挡墙的宽度为30-50um。
优选地，所述基板为CF基板，所述CF基板具有彩色滤光层及遮光层，所述框胶贴合区位于遮光层区域内，所述挡墙设置在所述遮光层上。
优选地，所述液晶面板还包括液晶层，所述挡墙的高度小于液晶层的厚度, 所述挡墙的宽度为30-50um。
本发明还提供了一种液晶面板的制作方法，包括以下步骤：
提供基板，所述基板具有框胶贴合区及位于框胶贴合区外侧的切割边缘；
在所述框胶贴合区与切割边缘之间形成挡墙。
优选地，所述基板包括TFT基板，所述TFT基板包括第一基板，所述第一基板具有切割边缘，所述在框胶贴合区与切割边缘之间的区域内形成挡墙包括：
先在所述第一基板上形成TFT阵列层及外围线路，所述外围线路区域内具有第一框胶贴合区，然后在第一框胶贴合区与所述第一基板的切割边缘之间形成所述挡墙。
优选地，所述基板还包括CF基板，所述CF基板包括第二基板，所述第二基板具有切割边缘，所述在所述框胶贴合区与切割边缘之间的区域内形成挡墙包括：
在所述第二基板上形成遮光层；所述遮光层区域内具有第二框胶贴合区；
在所述第二基板上形成彩色滤光层，并同时形成所述挡墙，所述挡墙形成在所述第二框胶贴合区与所述第二基板的切割边缘之间。
优选地，所述基板包括TFT基板，所述TFT基板包括第一基板，所述第一基板具有切割边缘，所述在框胶贴合区与切割边缘之间的区域内形成挡墙包括：
在所述第一基板上同时形成TFT阵列层、外围线路及挡墙，所述外围线路区域内具有第一框胶贴合区，所述挡墙设置于所述第一框胶贴合区与切割边缘之间。
优选地，所述基板包括CF基板，所述CF基板包括第二基板，所述第二基板具有切割边缘，所述在框胶贴合区与切割边缘之间的区域内形成挡墙包括：
在所述第二基板上涂覆黑色薄膜，并对其进行曝光、显影形成所述遮光层及所述挡墙；所述遮光层区域内具有第二框胶贴合区，所述挡墙形成在所述第二框胶贴合区与所述第二基板的切割边缘之间。
本发明通过在框胶贴合区与切割边缘之间设置挡墙，使得TFT基板与CF基板在贴合的过程中，挡墙可以防止未固化的框胶流动至切割边缘而对液晶面板的制程造成影响，从而缩小了框胶贴合区与切割边缘之间的距离，不但提高了框胶的涂布精度，而且还提高了基板的利用率。
附图说明
图1是现有技术中液晶面板的平面示意图；
图2是本发明液晶面板的平面示意图；
图3是本发明液晶面板的第一实施例的剖面示意图；
图4是本发明液晶面板的第二实施例的剖面示意图；
图5是本发明液晶面板的第三实施例的剖面示意图；
图6是本发明液晶面板的制作方法的流程示意图。
本发明目的的实现、功能特点及优点将结合实施例，参照附图做进一步说明。
具体实施方式
以下将结合附图及实施例，对实现发明目的的技术方案作详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。
参照图2，其为本发明液晶面板的平面示意图。该液晶面板包括基板，该基板具有框胶贴合区10及位于框胶贴合区10外围的切割边缘30，所述框胶贴合区10用于涂布框胶（图未示）或在液晶基板真空贴合制程中用于贴合框胶，所述框胶设置在框胶贴合区10内，而且框胶贴合区10与面板切割边缘30之间的区域内形成有挡墙20。
本发明通过在框胶贴合区10的外侧设置挡墙20，可以防止设置在框胶贴合区10的未固化的框胶流动至切割边缘30而对液晶面板的制程造成影响，从而缩小了框胶贴合区10与切割边缘30之间的距离，不但提高了框胶的涂布精度，还提高了基板的利用率。
参照图3，其为本发明液晶面板的第一实施例的剖面示意图。该液晶面板包括TFT基板1、CF基板2、设置在TFT基板1及CF基板2之间的液晶层3及框胶4。所述CF基板2具有第二基板24，所述第二基板24上具有彩色滤光层21及遮光层22及第二框胶贴合区23，所述第二框胶贴合区23位于遮光层22区域内。该TFT基板1包括第一基板14，所述第一基板14上具有TFT阵列11、外围线路12及设置在外围线路12区域内的第一框胶贴合区13。在第一框胶贴合区13与切割边缘30之间形成有挡墙20，且所述挡墙20设置在所述外围线路12上。所述框胶4设置在所述第一框胶贴合区13及第二框胶贴合区23上以粘结TFT基板1和CF基板2，且所述挡墙20设置于所述框胶4的外侧。
在本实施例中，在第一基板14涂覆黑色薄膜，并对其进行曝光、显影等形成所述挡墙20。当然，所述挡墙20也可以是在形成TFT阵列层11及外围线路12同时形成，此时，所述挡墙20则由金属材料、绝缘材料等组成，其与TFT阵列层11的结构及组成相同。
所述挡墙20限制未固化框胶4的流动且其高度小于液晶层3的厚度，该挡墙20的宽度为30-50um。通过设置挡墙20，使得TFT基板1及CF基板2在贴合的过程中，框胶4被限制在挡墙20内，因此框胶4与切割边缘30之间的距离L可以缩短，不但提高了框胶4的涂布精度，而且还提高了基板的利用率。
参照图4，其为本发明液晶面板的第二实施例的剖面示意图。该液晶面板包括TFT基板1、CF基板2、设置在TFT基板1及CF基板2之间的液晶层3及框胶4。本实施例与第一实施例的区别在于：所述挡墙20设置在所述CF基板2的遮光层21上，且所述挡墙20位于第二框胶贴合区23与切割边缘30之间。该CF基板2的挡墙20的制作过程可以包括：在第二基板24上涂覆黑色薄膜，并对其进行曝光、显影形成遮光层21及挡墙20，此时挡墙20的材质与遮光层21的材质相同。当然，在其他实施方式中，所述挡墙20也可以是在第二基板24上形成彩色滤光层22或间隙子（图未示）的同时制成，此时，挡墙20的材质可以是彩色滤光层22的色阻材料和间隙子材料中的一种，或是多种的组合。
该挡墙20限制未固化框胶4的流动且其高度小于液晶层3的厚度，该挡墙20的宽度为30-50um。通过设置挡墙20，可以使得TFT基板及CF基板在贴合的过程中，框胶4可以限制在挡墙20内，因此框胶4的外边缘及液晶面板的切割边缘30之间的距离L可以缩短，不但提高了框胶4的涂布精度，而且还提高了基板的利用率。
参照图5，其为本发明液晶面板的第三实施例的剖面示意图。该液晶面板包括TFT基板1、CF基板2、设置在TFT基板1及CF基板2之间的液晶层3及框胶4。本实施例与第一实施例、第二实施例的区别在于：上述挡墙20包括第一挡墙201及第二挡墙202，所述第一挡墙201设置在TFT基板1上，所述第二挡墙202设置在CF基板2上，所述第一挡墙201与第二挡墙202的高度均大于液晶层3的厚度二分之一且小于液晶层3的厚度，且第一挡墙201与第二挡墙202的宽度和在30-50um之间。当TFT基板1与CF基板2贴合时，第一挡墙201与第二挡墙202呈错位设置。因此可以加强挡墙20的阻挡框胶4流动至切割边缘30的能力。当然，在其他实施例中，所述第一挡墙201及第二挡墙202的高度可均小于液晶层3厚度的二分之一，则在TFT基板1与CF基板2贴合时，第一挡墙201与第二挡墙202则可正对设置。该第一挡墙201的结构及第二挡墙202的结构可参照前面实施例所述，在此不再赘述。通过第一挡墙201及第二挡墙202的设置，不但缩小了框胶4与切割边缘30之间的距离L，而且进一步增强了阻挡框胶4流动的能力。
参照图6，其为本发明液晶面板的制作方法的流程示意图。该液晶面板的制作方法包括：
步骤S101、提供基板，该基板具有框胶贴合区10及位于框胶贴合区10外围的切割边缘30；
步骤S102、在框胶贴合区10与切割边缘30之间形成挡墙20。
本发明通过在框胶贴合区10与切割边缘30之间设置挡墙20，使得液晶面板在贴合的过程中，挡墙20可以防止框胶流动至切割边缘30而对液晶面板的制程造成影响，从而缩小了框胶贴合区10与切割边缘30之间的距离，不但提高了框胶的涂布精度，还提高了基板的利用率。
在本发明液晶面板的制作方法的第一实施方式中，上述基板为TFT基板1，该TFT基板1具有切割边缘30，如图3所示。所述TFT基板1包括第一基板14。该液晶面板的制作方法为：
A1、在第一基板14上形成TFT阵列层11及外围线路12，所述外围线路12上具有第一框胶贴合区13；
在本步骤中，通过成膜、涂光阻、曝光、显影、蚀刻、去光阻等制程在所述第一基板14上形成所述TFT阵列层11及外围线路12。
A2、在第一框胶贴合区13与切割边缘30之间形成挡墙20。
在本步骤中，在第一基板14上涂覆黑色薄膜，并对其进行曝光、显影等在TFT基板1上形成所述挡墙20，所述挡墙20位于外围线路12上。
在本发明液晶面板的制作方法的第二实施方式中，上述基板为TFT基板1，该TFT基板1具有切割边缘30。本实施方式与第一实施方式的区别在于：在第一基板14上通过成膜、涂光阻、曝光、显影、蚀刻、去光阻等制程形成TFT阵列层11及外围线路12，同时形成所述挡墙20。所述外围线路12上具有第一框胶贴合区13；所述挡墙20设置于所述第一框胶贴合区13与切割边缘30之间。
所述挡墙20限制未固化框胶4的流动且其高度小于液晶层3的厚度，该挡墙20的宽度为30-50um。通过设置挡墙20，使得TFT基板1及CF基板2在贴合的过程中，框胶4被限制在挡墙20内，因此框胶4与切割边缘30之间的距离L可以缩短，不但提高了框胶4的涂布精度，而且还提高了基板的利用率。
在本发明液晶面板的制作方法的第三实施方式中，上述基板为CF基板2，该CF基板2具有第二基板24，该第二基板24也具有切割边缘30。如图4所示。该 CF基板2的制作方法为：
B1、在第二基板24上形成遮光层21及挡墙20；
在本步骤中，在第二基板24上涂覆黑色薄膜，并对其进行曝光、显影形成所述遮光层21及挡墙20。所述遮光层21区域内具有第二框胶贴合区23，所述挡墙20形成在所述第二框胶贴合区23与切割边缘30之间，且位于遮光层21上。
B2、在基板24上形成彩色滤光层22。
当然，在其他实施方式中，所述挡墙20也可以是在CF基板形成彩色滤光层22或间隙子（图未示）的同时制成，此时，挡墙20的材质可以是彩色滤光层22的色阻材料和间隙子材料中的一种，或是多种的组合。
该挡墙20限制未固化框胶4的流动且其高度小于液晶层3的厚度，该挡墙20的宽度为30-50um。通过设置挡墙20，可以使得TFT基板及CF基板在贴合的过程中，框胶4可以限制在挡墙20内，因此框胶4的外边缘及液晶面板的切割边缘30之间的距离L可以缩短，不但提高了框胶4的涂布精度，而且还提高了基板的利用率。
在本发明液晶面板的制作方法的第四实施方式中，上述基板包括TFT基板1及CF基板2，如图5所示，上述挡墙20包括形成在TFT基板1上的第一挡墙201及形成在CF基板2上的第二挡墙202。如此，可以加强挡墙20阻挡框胶4流动的能力。优选地，第一挡墙211与第二挡墙212的高度均大于液晶层的厚度的二分之一且小于液晶层的厚度，而且第一挡墙201及第二挡墙202呈错位设置。，且第一挡墙21与第二挡墙22的宽度和在30-50um之间。当然，在其他实施例中，所述第一挡墙201及第二挡墙202的高度可均小于液晶层3厚度的二分之一，则在TFT基板1与CF基板2贴合时，第一挡墙201与第二挡墙202则可正对设置。该第一挡墙201的制程及第二挡墙202的制程可参照上述实施例所述，在此就不不再赘述。通过第一挡墙201及第二挡墙202的设置，不但减小了框胶4与切割边缘30之间的距离L，而且进一步增加了阻挡框胶4流动的能力。
以上所述仅为本发明的优选实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (20)

  1. 一种液晶面板，其特征在于，所述液晶面板包括基板及液晶层，所述基板具有框胶贴合区及位于框胶贴合区外侧的切割边缘，所述框胶贴合区与切割边缘之间设置挡墙，且该挡墙的高度小于液晶层的厚度。
  2. 根据权利要求1所述的液晶面板，其特征在于，所述基板包括TFT基板及CF基板，所述挡墙包括第一挡墙及第二挡墙，所述第一挡墙设置在TFT基板上，所述第二挡墙设置在CF基板上，且所述第一挡墙与第二挡墙的宽度和为30-50um。
  3. 根据权利要求2所述的液晶面板，其特征在于，所述第一挡墙与第二挡墙的高度均大于液晶层的厚度的二分之一，所述第一挡墙与第二挡墙错位设置；或所述第一挡墙与第二挡墙的高度均小于液晶层的厚度的二分之一，所述第一挡墙与第二挡墙正对设置。
  4. 根据权利要求1所述的液晶面板，其特征在于，所述基板为TFT基板，所述TFT基板包括TFT阵列层及外围线路，所述框胶贴合区位于所述外围线路区域内，所述挡墙设置在所述外围线路上。
  5. 根据权利要求1所述的液晶面板，其特征在于，所述基板为CF基板，所述CF基板具有彩色滤光层及遮光层，所述框胶贴合区位于遮光层区域内，所述挡墙设置在所述遮光层上。
  6. 种液晶面板，其特征在于，所述液晶面板包括基板，所述基板具有框胶贴合区及位于框胶贴合区外侧的切割边缘，所述框胶贴合区与切割边缘之间设置有挡墙。
  7. 根据权利要求6所述的液晶面板，其特征在于，所述基板包括TFT基板及CF基板，所述挡墙包括第一挡墙及第二挡墙，所述第一挡墙设置在TFT基板上，所述第二挡墙设置在CF基板上。
  8. 根据权利要求7所述的液晶面板，其特征在于，所述液晶面板还包括液晶层，所述第一挡墙与第二挡墙的高度均大于液晶层的厚度的二分之一且小于液晶层的厚度，所述第一挡墙与第二挡墙错位设置。
  9. 根据权利要求7所述的液晶面板，其特征在于，所述液晶面板还包括液晶层，所述第一挡墙与第二挡墙的高度均小于液晶层的厚度的二分之一且小于液晶层的厚度，所述第一挡墙与第二挡墙正对设置。
  10. 根据权利要求6所述的液晶面板，其特征在于，所述基板为TFT基板，所述TFT基板包括TFT阵列层及外围线路，所述框胶贴合区位于所述外围线路区域内，所述挡墙设置在所述外围线路上。
  11. 根据权利要求10所述的液晶面板，其特征在于，所述液晶面板还包括液晶层，所述挡墙的高度小于液晶层的厚度, 所述挡墙的宽度为30-50um。
  12. 根据权利要求6所述的液晶面板，其特征在于，所述基板为CF基板，所述CF基板具有彩色滤光层及遮光层，所述框胶贴合区位于遮光层区域内，所述挡墙设置在所述遮光层上。
  13. 根据权利要求12所述的液晶面板，其特征在于，所述液晶面板还包括液晶层，所述挡墙的高度小于液晶层的厚度，所述挡墙的宽度为30-50um。
  14. 种液晶面板的制作方法，其特征在于，包括以下步骤：
    提供基板，所述基板具有框胶贴合区及位于框胶贴合区外侧的切割边缘；
    在所述框胶贴合区与切割边缘之间形成挡墙。
  15. 据权利要求14所述的液晶面板的制作方法，其特征在于，所述基板包括TFT基板，所述TFT基板包括第一基板，所述第一基板具有切割边缘，所述在框胶贴合区与切割边缘之间的区域内形成挡墙包括：
    先在所述第一基板上形成TFT阵列层及外围线路，所述外围线路区域内具有第一框胶贴合区，然后在第一框胶贴合区与所述第一基板的切割边缘之间形成所述挡墙。
  16. 据权利要求15所述的液晶面板的制作方法，其特征在于，所述基板还包括CF基板，所述CF基板包括第二基板，所述第二基板具有切割边缘，所述在所述框胶贴合区与切割边缘之间的区域内形成挡墙包括：
    在所述第二基板上形成遮光层；所述遮光层区域内具有第二框胶贴合区；
    在所述第二基板上形成彩色滤光层，并同时形成所述挡墙，所述挡墙形成在所述第二框胶贴合区与所述第二基板的切割边缘之间。
  17. 据权利要求14所述的液晶面板的制作方法，其特征在于，所述基板包括TFT基板，所述TFT基板包括第一基板，所述第一基板具有切割边缘，所述在框胶贴合区与切割边缘之间的区域内形成挡墙包括：
    在所述第一基板上同时形成TFT阵列层、外围线路及挡墙，所述外围线路区域内具有第一框胶贴合区，所述挡墙设置于所述第一框胶贴合区与切割边缘之间。
  18. 据权利要求17所述的液晶面板的制作方法，其特征在于，所述基板还包括CF基板，所述CF基板包括第二基板，所述第二基板具有切割边缘，所述在所述框胶贴合区与切割边缘之间的区域内形成挡墙包括：
    在所述第二基板上形成遮光层；所述遮光层区域内具有第二框胶贴合区；
    在所述第二基板上形成彩色滤光层，并同时形成所述挡墙，所述挡墙形成在所述第二框胶贴合区与所述第二基板的切割边缘之间。
  19. 据权利要求14所述的液晶面板的制作方法，其特征在于，所述基板包括CF基板，所述CF基板包括第二基板，所述第二基板具有切割边缘，所述在框胶贴合区与切割边缘之间的区域内形成挡墙包括：
    在所述第二基板上涂覆黑色薄膜，并对其进行曝光、显影形成所述遮光层及所述挡墙；所述遮光层区域内具有第二框胶贴合区，所述挡墙形成在所述第二框胶贴合区与所述第二基板的切割边缘之间。
  20. 据权利要求14所述的液晶面板的制作方法，其特征在于，所述基板包括CF基板，所述CF基板包括第二基板，所述第二基板具有切割边缘，所述在所述框胶贴合区与切割边缘之间的区域内形成挡墙包括：
    在所述第二基板上形成遮光层；所述遮光层区域内具有第二框胶贴合区；
    在所述第二基板上形成彩色滤光层，并同时形成所述挡墙，所述挡墙形成在所述第二框胶贴合区与所述第二基板的切割边缘之间。
PCT/CN2012/074821 2012-04-11 2012-04-27 液晶面板及其制作方法 WO2013152533A1 (zh)

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