WO2013149849A1 - Vorrichtung zum abscheiden einer schicht auf einer halbleiterscheibe mittels gasphasenabscheidung - Google Patents

Vorrichtung zum abscheiden einer schicht auf einer halbleiterscheibe mittels gasphasenabscheidung Download PDF

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Publication number
WO2013149849A1
WO2013149849A1 PCT/EP2013/056011 EP2013056011W WO2013149849A1 WO 2013149849 A1 WO2013149849 A1 WO 2013149849A1 EP 2013056011 W EP2013056011 W EP 2013056011W WO 2013149849 A1 WO2013149849 A1 WO 2013149849A1
Authority
WO
WIPO (PCT)
Prior art keywords
susceptor
semiconductor wafer
shaft
gas
distributor head
Prior art date
Application number
PCT/EP2013/056011
Other languages
German (de)
English (en)
French (fr)
Inventor
Georg Brenninger
Original Assignee
Siltronic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag filed Critical Siltronic Ag
Priority to SG11201406275QA priority Critical patent/SG11201406275QA/en
Priority to US14/389,944 priority patent/US9153472B2/en
Priority to CN201380016687.1A priority patent/CN104254638B/zh
Priority to KR1020147024782A priority patent/KR101603031B1/ko
Priority to JP2015500940A priority patent/JP5921754B2/ja
Publication of WO2013149849A1 publication Critical patent/WO2013149849A1/de

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • C23C16/466—Cooling of the substrate using thermal contact gas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Definitions

  • the invention relates to an apparatus for depositing a layer on a semiconductor wafer by means of gas phase deposition ⁇ and a method using this apparatus
  • a device of this kind is for example in the
  • US2004 / 0144323 AI shown. It includes upper and lower transparent material lids and a sidewall defining a reactor space.
  • the reactor space is divided by a susceptor into an upper reactor space and into a lower reactor space.
  • the susceptor carries a wafer to be coated and rests even on arms of a support frame, which forms the upper end of a shaft rotating the susceptor and the wafer.
  • Upper and lower lamp banks heat the susceptor and the semiconductor wafer.
  • a deposition gas is directed parallel to the surface of the semiconductor ⁇ slice through the upper reactor space and thereby thermally cleaved to form cleavage products are deposited to form a uniformly as possible thick layer on the surface of the front side of the semiconductor wafer.
  • a purge gas is passed through the lower reactor space in order to prevent deposition gas or fission products thereof from reaching the rear side of the susceptor and the rear side of the semiconductor wafer.
  • semiconductor wafer presents problems. Even after one Optimization of critical process parameters such as the electric power of the lamp banks and the volume flow of deposition gas and purge gas, it is found after analyzing a ⁇ coated wafer that the layer thickness in the center of the semiconductor wafer is slightly larger than in the edge ⁇ area of the semiconductor wafer.
  • the object of the present invention is to achieve a more uniform layer thickness.
  • the inventors of the present invention has found that found in the center of the coated semiconductor wafer increased layer thickness due to a temperature increase in the Zen ⁇ trums Scheme of the susceptor and that this local temperature increase can not be avoided by means of the optimization of said process parameters.
  • an apparatus for depositing a layer on a semiconductor wafer by means of gas phase deposition comprising a susceptor having a front side and a rear side;
  • a shaft for rotating the susceptor having upper and lower ends and being provided with a channel extending from the lower end to the upper end;
  • a gas distributor head fixed to the upper end of the shaft and cooling a region of the back of the susceptor by means of a cooling gas, the cooled region of
  • the invention also relates to a method in which this device is used.
  • cooling a region of the back side of the susceptor that extends radially outward from the center of the susceptor also causes a decrease in temperature on the surface of the semiconductor wafer to be coated in the center of the front of the semiconductor wafer and in a radially around the center Area of the surface of the front side of the semiconductor wafer.
  • the rate of deposition of the layer is lowered, so that the targeted cooling measure a radially uniform film thickness distribution can be achieved.
  • the cooling means includes the use of a gas distributor head which directs and limits the action of the cooling gas to a region of the backside of the susceptor that extends radially outward from the center of the susceptor.
  • Diameter of the region is smaller than the diameter of the semiconductor wafer to be coated, and the ratio of the diameter ⁇ d / D is preferably not less than 0.1 and not more than 0.4, where d is the diameter of the cooled area of the backside of the susceptor and D denotes the diameter of a semiconductor wafer to be coated deposited on the susceptor.
  • the diameter of the cooled area must not be too large, because otherwise areas of the semiconductor wafer are cooled, which should not be cooled. But it must not be too small, because otherwise areas of the semiconductor wafer are not cooled, which should be cooled.
  • the gas distributor head can be designed differently.
  • a gas distributor head which fanned the flow of effluent cooling gas directed against the back of the susceptor.
  • the cooled area of the back side of the susceptor ⁇ is the area that is taken directly from the gas stream ⁇ leaving the gas distribution head.
  • the gas distributor head preferably has a certain distance from the Rear side of the susceptor and a certain opening angle for fanning the gas flow.
  • a device preferably comprises a mass flow controller or mass flow limiter which adjusts a volume flow of the cooling gas which cools the area of the rear side of the susceptor such that it is not less than 1 slm and not more than 20 slm. At a flow rate greater than 20 slm there is a danger that the effect of the cooling gas exceeds the desired effect and, ultimately, less material in the center of the surface of the semiconductor wafer is deposited, as is beabsich ⁇ Untitled.
  • the cooling gas is preferably water ⁇ material, nitrogen or a noble gas or any
  • the semiconductor wafer preferably consists of monocrystalline silicon.
  • the deposited layer is preferably one
  • the diameter of the semiconductor wafer to be coated is preferably ⁇ not less than 300 mm, more preferably 300 mm or 450 mm.
  • Fig.l is a vertical sectional drawing of an inventive apparatus, some features may not Darge ⁇ provides are that not contribute to the understanding of the invention in ⁇ .
  • 2 shows, also in vertical section, the relative position of a preferably designed gas distributor head to a susceptor and an overlying semiconductor wafer.
  • 3 shows the radial distribution of the layer thickness h am
  • the apparatus according to Fig.l comprises a susceptor 3, which carries a semiconductor wafer to be coated 5 and even rests on the arms of a support frame 1.
  • the support frame is seated together with a gas distributor head 9 on the upper end of a rotating shaft 7.
  • the shaft is surrounded by a tube 6, which is widened at an upper end to a support ring 2, on the lifting pins 4 for lifting and Lowering the semiconductor wafer 5 put on the susceptor 3.
  • the lower end of the shaft is connected via a line to a source 10 in communication, which provides the cooling gas ⁇ .
  • a mass flow controller or mass flow limiter 8 is preferably integrated, which controls or limits the volume flow of the cooling gas.
  • the device comprises a further source 11 of a gas, another Lei ⁇ tion and another mass flow controller or mass flow limiter 12 for supplying the other gas.
  • the additional gas which may have the composition of the cooling gas or another composition, is used as purge gas. which keeps the exit region of the further gas at the upper end of the tube free of reactive gases.
  • the gas distributor head 9 preferably has the shape of a conically widened rotating body, as shown in Figure 2, and it fans out the gas flow leaving it.
  • a ratio of the diameters d / D 0.1
  • the diameter dl of the area of the back side of the susceptor to be cooled is 38 mm long when a semiconductor wafer with a diameter D of 300 mm is intended to be coated.
  • the distance AI, the gas distributor head to the back of the susceptor has to be about 11 mm and the gas distributor head fanned out the gas flow leaving it with an opening angle Wl of about 20 °.
  • the diameter d2 of the area to be cooled of the back side of the susceptor is 152 mm long when a semiconductor wafer having a diameter D of 300 mm is intended to be coated.
  • the distance A2 which the gas distributor head has to the rear side of the susceptor must be about 81 mm and the gas distributor head fan out the gas flow leaving it at an opening angle W2 of about 37 °.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
PCT/EP2013/056011 2012-04-04 2013-03-22 Vorrichtung zum abscheiden einer schicht auf einer halbleiterscheibe mittels gasphasenabscheidung WO2013149849A1 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
SG11201406275QA SG11201406275QA (en) 2012-04-04 2013-03-22 Device for depositing a layer on a semiconductor wafer by means of vapour deposition
US14/389,944 US9153472B2 (en) 2012-04-04 2013-03-22 Device for depositing a layer on a semiconductor wafer by means of vapour deposition
CN201380016687.1A CN104254638B (zh) 2012-04-04 2013-03-22 通过汽相沉积在半导体晶片上沉积层的设备
KR1020147024782A KR101603031B1 (ko) 2012-04-04 2013-03-22 증착에 의한 반도체 웨이퍼 상의 층 퇴적 장치
JP2015500940A JP5921754B2 (ja) 2012-04-04 2013-03-22 蒸着法によって半導体ウエハ上に層を堆積させる装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102012205616.5A DE102012205616B4 (de) 2012-04-04 2012-04-04 Vorrichtung zum Abscheiden einer Schicht auf einer Halbleiterscheibe mittels Gasphasenabscheidung
DE102012205616.5 2012-04-04

Publications (1)

Publication Number Publication Date
WO2013149849A1 true WO2013149849A1 (de) 2013-10-10

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Family Applications (1)

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PCT/EP2013/056011 WO2013149849A1 (de) 2012-04-04 2013-03-22 Vorrichtung zum abscheiden einer schicht auf einer halbleiterscheibe mittels gasphasenabscheidung

Country Status (7)

Country Link
US (1) US9153472B2 (ja)
JP (1) JP5921754B2 (ja)
KR (1) KR101603031B1 (ja)
CN (1) CN104254638B (ja)
DE (1) DE102012205616B4 (ja)
SG (1) SG11201406275QA (ja)
WO (1) WO2013149849A1 (ja)

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DE102016211614A1 (de) * 2016-06-28 2017-12-28 Siltronic Ag Verfahren und Vorrichtung zur Herstellung von beschichteten Halbleiterscheiben
CN109306468B (zh) * 2017-07-26 2020-10-16 上海新昇半导体科技有限公司 衬托器、气相生长装置及气相生长方法
CN109306467B (zh) * 2017-07-26 2020-10-16 上海新昇半导体科技有限公司 气相生长装置及气相生长方法
CN108866514B (zh) * 2018-07-01 2023-12-12 航天科工(长沙)新材料研究院有限公司 一种改进的mpcvd设备基板台冷却结构
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US9153472B2 (en) 2015-10-06
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SG11201406275QA (en) 2014-11-27
US20150056787A1 (en) 2015-02-26
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