CN104254638A - 通过汽相沉积在半导体晶片上沉积层的设备 - Google Patents

通过汽相沉积在半导体晶片上沉积层的设备 Download PDF

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CN104254638A
CN104254638A CN201380016687.1A CN201380016687A CN104254638A CN 104254638 A CN104254638 A CN 104254638A CN 201380016687 A CN201380016687 A CN 201380016687A CN 104254638 A CN104254638 A CN 104254638A
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G·布伦宁格
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Abstract

通过汽相沉积在半导体晶片上沉积层的设备，其包括具有前面和背面的基座；用于旋转所述基座的轴，其中所述轴具有上端和下端，并设置有从下端延伸到上端的通道；气体分配器头，其固定在所述轴的上端，并通过冷却气体来冷却基座的背面的区域，其中被冷却区域从基座的中心径向向外延伸；和管线，用于将冷却气体从气体源供给到所述轴的下端，冷却气体从所述轴的下端穿过所述通道至所述轴的上端并进入所述分配器头，并导向所述基座的背面。

Description

通过汽相沉积在半导体晶片上沉积层的设备
本发明涉及一种用于通过汽相沉积在半导体晶片上沉积层的设备，和使用所述设备的方法
例如US2004/0144323A1中公开了这种类型的设备。它包括由透明材料组成的上盖和下盖以及侧壁，其限定反应室。所述反应室由基座分成上部反应室和下部反应室。所述基座支撑待涂布的半导体晶片，其自身靠在形成轴的上端部的支撑框架的臂上，所述轴旋转所述基座和半导体晶片。上部和下部灯组(1amp banks)加热基座和半导体晶片。平行于半导体晶片的表面引导沉积气体通过上部反应室并且在过程中热裂解，其中沉积产物在半导体晶片的前面的表面上沉积以形成尽可能厚度均匀的层。同时，引导净化气体通过下部反应室，以防止沉积气体或其分解产物到达所述基座的背面和半导体晶片的背面。
US4821674公开了可以引导净化气体穿过轴和穿过轴与围绕轴的管之间存在的间隙，以防止沉积气体传递到基座下方的区域。
但是，在半导体晶片上沉积厚度均匀的层造成问题。甚至在优化关键工艺参数(如灯组的电功率和沉积气体和净化气体的体积流速)之后，在分析了涂布的半导体晶片之后，可以确定，在半导体晶片的中心的层厚度稍大于在半导体晶片的边缘区域的层厚度。
本发明的目的是获得更均匀的层厚度。
本发明的发明人已经发现，在涂布的半导体晶片的中心的增加的层厚度是由于基座中心区域的温度上升，并且该局部的温度上升不能通过优化所述工艺参数来避免。
因此，为了实现这个目的，提出了通过汽相沉积在半导体晶片上淀积层的设备，其包括
具有前面和背面的基座；
用于旋转所述基座的轴，其中所述轴具有上端和下端，并设置有从下端延伸到上端的通道；
气体分配器头，其固定在所述轴的上端，并通过冷却气体来冷却基座的背面的区域，其中被冷却区域从基座的中心径向向外延伸；和
管线(line)，用于将冷却气体从气体源供给到所述轴的下端，冷却气体从所述轴的下端穿过所述通道至所述轴的上端并进入所述分配器头，并导向所述基座的背面。
本发明也涉及使用此设备的方法。
从基座的中心径向向外延伸的基座的背面区域的冷却，最终也导致在半导体晶片的前面的中心和在围绕中心径向延伸的半导体晶片的前面的区域中的待涂布半导体晶片的表面温度的降低。具有较低温度，进而，层的沉积速率减小，从而通过目标冷却措施(targeted cooling measure)，可以实现径向更均匀的层厚度分布。
所述冷却措施包括使用气体分配器头，其引导和限制到达从基座的中心径向向外延伸的基座的背面的区域的冷却气体的作用。所述区域的直径小于待涂布的半导体晶片的直径，且直径比率d/D优选不小于0.1且不大于0.4，其中d表示基座的背面的被冷却区域的直径，D表示放置在基座上的待涂布的半导体晶片的直径。被冷却区域的直径必须不能变得太大，因为否则，半导体晶片不应该被冷却的区域也被冷却了。但是，所述直径必须也不能太小，因为否则，半导体晶片的应该冷却的区域没被冷却。
根据应用，所述气体分配器头可以不同的方式实现。优选气体分配器头，其以扇出的方式将流出的冷却气体流引向基座的背面。基座的背面的被冷却区域是离开所述气体分配器头的气流直接冲击的区域。该气体分配器头优选与基座的背面具有特定距离和用于扇出气流的特定开口角。
根据本发明的设备优选包括质量流量控制器或质量流量限制器，其以这样的方式设置冷却基座背面的区域的冷却气体的体积流速，即不小于1slm且不超过20slm。在体积流速大于20slm的情况下，有冷却气体的效果超过预期效果的危险，最终，在半导体晶片的表面中心沉积比预期较少的材料。
冷却气体优选为氢气、氮气或惰性气体或所述气体的任何需要的混合物。
半导体晶片优选由单晶硅组成。沉积层优选为外延沉积硅组成的层，其可掺杂有电活性掺杂剂。待涂布的半导体晶片的直径优选不小于300mm，更优选为300mm或450mm。
下面将参照附图更详细地说明本发明。
图1示出根据本发明的设备的垂直剖面图，其中某些对理解本发明没有贡献的特征没有示出。
图2同样以垂直剖面示出优选实施方案的气体分配器头与基座和上覆的半导体晶片的相对位置。
图3示出了基于半导体晶片的实例，层厚度h的径向分布，所述半导体晶片由硅组成，其以根据本发明的方式外延涂布硅层。
图4示出为比较目的，基于半导体晶片的实例，层厚度h的径向分布，所述半导体晶片由硅组成，其以非常相似的其他方式涂布，但是在涂布过程中省去用冷却气体冷却基座的背面。
根据图1的设备包括基座3，其支撑待涂布的半导体晶片5且它自身靠在支撑框架1的臂上。支撑框架与气体分配器头9一起位于旋转轴7的上端。该轴由管6围绕，管6在其上端延伸以形成支撑环2，在支撑环2上设置顶销(lifting pin)4，用于升起和降低在基座3上的半导体晶片5。在管6和轴7之间有间隙，所述间隙向上延伸到支承环。所述轴的下端通过管线连接到源10，其提供冷却气体。质量流量控制器或质量流量限制器8优选地集成于所述管线中，控制或限制冷却气体的体积流速。根据本发明的一个优选构造中，该设备包括另一气体源11、另一管线和另一质量流量控制器或质量流量限制器12，用于提供另外的气体。另外的气体，其可具有冷却气体的成分或不同的成分，作为净化气体使用，以保持管的上端另外气体的存在区域没有反应气体。
气体分配器头9优选具有圆锥形旋转延伸体的形式，如图2中所示，并且它扇出离开它的气流。假定直径比率为d/D＝0.1，如果要涂布直径D为300mm的半导体晶片，则基座的背面待冷却的区域的直径d1为38mm长度。为此目的，气体分配器头到基座的背面的距离A1必须是约11mm，并且该气体分配器头必须以具有约20°的开口角W1扇出离开它的气流。假定直径比率为d/D＝0.4，如果要涂布的半导体晶片的直径D为300mm，则基座的背面的待冷却的区域的直径d2为152mm长度。为此目的，气体分配器头到基座的背面的距离A2必须是约81mm，并且气体分配器头必须以具有约37°的开口角W2扇出离开它的气流。
实施例：
如图3和图4的对比表明，如果使用根据本发明的设备，后者厚度h的径向分布明显更加均匀。

Claims (4)

1.通过汽相沉积在半导体晶片上沉积层的设备，其包括
具有前面和背面的基座；
用于旋转所述基座的轴，其中所述轴具有上端和下端，并设置有从下端延伸到上端的通道；
气体分配器头，其固定在所述轴的上端，并通过冷却气体来冷却基座的背面的区域，其中被冷却区域从基座的中心径向向外延伸；和
管线，用于将所述冷却气体从气体源供给到所述轴的下端，所述冷却气体从所述轴的下端穿过所述通道至所述轴的上端并进入所述分配器头，并导向所述基座的背面。
2.根据权利要求1所述的设备，其包括质量流量控制器或质量流量限制器，其控制或限制冷却气体离开气体分配器头的体积流速，使体积流速不小于1slm且不大于20slm。
3.根据权利要求1或权利要求2所述的设备，其中所述气体分配器头具体为以下方式：比值d/D不小于0.1且不大于0.4，其中d表示所述基座背面的被冷却区域的直径，D表示放置在所述基座上的待涂布的半导体晶片的直径。
4.使用根据权利要求1至3中任一项所述的设备通过汽相沉积在半导体晶片上沉积层的方法。
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