CN108866514A - 一种改进的mpcvd设备基板台冷却结构 - Google Patents

一种改进的mpcvd设备基板台冷却结构 Download PDF

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CN108866514A
CN108866514A CN201810705213.2A CN201810705213A CN108866514A CN 108866514 A CN108866514 A CN 108866514A CN 201810705213 A CN201810705213 A CN 201810705213A CN 108866514 A CN108866514 A CN 108866514A
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黄翀
范杰
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Changsha New Material Industry Research Institute Co Ltd
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

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Abstract

本发明涉及一种改进的MPCVD设备基板台冷却结构，包括基板台支撑台、设置有冷却液出口的冷却管，还包括设置于冷却液出口处的喷头，所述基板台支撑台底部非接触基板台的一侧面为中间凹、两侧高的底部弧面，所述喷头的一端连接冷却管，另一端喷口处设置有截面面积覆盖基板台支撑台底面面积的托水板。本发明使冷却液经过冷却管进入喷头并储存于喷头内，喷头的另一端喷口处设置有截面面积覆盖基板台支撑台底面面积的托水板，托水板呈弧形状与所述底部弧面形状匹配，托水板与底部弧面之间留有均匀的缝隙用于流出冷却液，冷却液均匀分布在基板台底部，实现基板台底部全覆盖，进而使基板台得以均匀冷却。

Description

一种改进的MPCVD设备基板台冷却结构
技术领域
本发明涉及MPCVD(微波等离子体化学气相沉积)设备中的冷却结构，具体涉及一种改进的MPCVD设备基板台冷却结构。
背景技术
MPCVD(微波等离子体化学气相沉积)法是合成高质量金刚石最具潜力的方法之一。MPCVD反设备是通过将微波发生器产生的微波，经波导传输系统进入反应设备的腔内(反应腔)，往反应腔中通入甲烷和氢气的混合气体，在微波的激励下，在反应腔内产生辉光放电，使反应气体的分子离化，产生等离子体，在基板台沉积得到金刚石膜。基板台的温度均匀性影响金刚石膜的生长，基板台冷却均匀有利于保持基板台的温度均匀性，进而得到质量好的金刚石膜。
目前基板台冷却结构为通过一根冷却管，将冷却液直接喷在基板台底部冷却管正上方区域，正上方区域为一平面，其余非冷却管正上方区域的位置冷却液覆盖面积小，而且基板台底部在等离子体加热时中间位置温度高于两侧温度，均会导致基板台冷却不均匀；冷却速度的快慢也不能调节。
发明内容
本发明是针对现有基板台冷却结构的缺点，提供基板台冷却均匀及冷却速度可调节的一种改进的MPCVD设备基板台冷却结构，包括基板台支撑台、设置有冷却液出口的冷却管，还包括设置于冷却液出口处的喷头，其特征在于，所述基板台支撑台底部非接触基板台的一侧面为中间凹、两侧高的底部弧面，所述喷头的一端连接冷却管，另一端喷口处设置有截面面积覆盖基板台支撑台底面面积的托水板。
进一步地，还包括支撑台连接件、密封件、冷却液排出管接头，所述密封件用于基板台支撑台和支撑台连接件的密封，所述冷却液排出管接头设置于支撑台连接件的底部。
优选地，所述喷头的另一端喷口处设置的托水板呈弧形状与所述底部弧面形状匹配，托水板与底部弧面之间留有均匀的缝隙，基板台支撑台的柱段与托水板之间留有均匀的缝隙。
进一步地，所述喷头与冷却管之间活动连接，以便于调整喷口与基板台支撑台之间的距离。
具体地，所述喷头与冷却管之间活动连接为螺纹连接，喷口与基板台支撑台的距离通过连接螺纹进行调节。
具体地，所述托水板与底部弧面之间的缝隙宽度为2～15mm，基板台支撑台的柱段与托水板之间的缝隙宽度为2～15mm。
本发明的一种改进的MPCVD设备基板台冷却结构，使冷却液经过冷却管进入喷头并储存于喷头内，喷头的另一端喷口处设置有截面面积覆盖基板台支撑台底面面积的托水板，托水板呈弧形状与所述底部弧面形状匹配，托水板与底部弧面之间留有均匀的缝隙用于流出冷却液，基板台支撑台的柱段与托水板之间留有均匀的缝隙用于流出冷却液，冷却液均匀分布在基板台底部，实现基板台底部全覆盖，基板台支撑台底部弧面为中间低、两侧高的弧面，两侧温度低于中间温度，在冷却时，中间位置厚度小于两侧面厚度，中间位置热量传导较快，侧面热量传导较慢，与在等离子体加热时中间位置温度高于两侧温度的实际情况相匹配，进而使基板台得以均匀冷却。喷头与冷却管之间通过连接螺纹连接，喷口与基板台支撑台的距离通过连接螺纹进行调节，在流量不变的情况下，通过调节两者的距离，可调节冷却速度，距离大，冷却速度慢；距离小，冷却速度快，即根据需求调节冷却效果。
附图说明
图1为本发明的基板台冷却结构示意图；
图2为图1的B向A-A剖视图；
图3为基板台支撑台底部、喷头放大结构示意图。
其中，1-基板台；2-基板台支撑台(21-底部弧面；22-柱段)；3-喷头(31-喷口；311-托水板)；4-冷却管(41-冷却液出口)；5-密封件；6-支撑台连接件；7-冷却液排出管接头。
具体实施方式
以下结合实施例对本发明作进一步描述。
如图1和图2所示，为本发明一种基板台冷却结构示意图。本实施例的基板台冷却结构，基板台1放置在基板台支撑台2上，基板台支撑台2与支撑台连接件6通过密封件5和螺钉密封固定连接。喷头3与冷却管4在冷却液出口41处通过螺纹连接，冷却管4固定在支撑台连接件6上，冷却液排出管接头7通过螺纹或其他方式固定在支撑台连接件6底部。本实施例的冷却液为冷却水。
冷却水通过冷却管4的冷却液出口41进入喷头3并储存于喷头3内，对基板台支撑台2底部进行冷却，进而实现基板台1的冷却。
本实施例喷头3的一端连接冷却管4，另一端喷口31处设置有截面面积覆盖基板台支撑台2底面面积的托水板311，托水板311呈弧形状与所述底部弧面21形状匹配，托水板311与底部弧面21之间留有均匀的缝隙用于流出冷却液，本实施例中托水板311与底部弧面21之间留有均匀的缝隙为2～15mm，基板台支撑台的柱段与托水板之间留有均匀的缝隙用于流出冷却水，本实施例中基板台支撑台的柱段与托水板之间留有均匀的缝隙为8.5mm，冷却水均匀分布在基板台底部弧面21，实现基板台底部弧面21全覆盖，基板台支撑台底部弧面21为中间低、两侧高的弧面，两侧温度低于中间温度，在冷却时，中间位置厚度小于两侧面厚度，中间位置热量传导较快，侧面热量传导较慢，与在等离子体加热时中间位置温度高于两侧温度的实际情况相匹配，进而使基板台1得以均匀冷却。冷却水充满喷头3后覆盖在基板台支撑台2的底部弧面21，再从基板台支撑台底部弧面21与托水板311和柱段22之间的缝隙处流出，从冷却液排出管接头7处排出。
在前述实施例中，喷头与冷却管之间通过连接螺纹连接，喷头3的喷口31、托水板311与基板台支撑台2底部弧面21的距离则可通过连接螺纹进行调节。在流量不变的情况下，通过调节两者的距离，可调节冷却速度，距离大，冷却速度慢；距离小，冷却速度快，即根据需求调节冷却效果。

Claims (6)

1.一种改进的MPCVD设备基板台冷却结构，包括基板台支撑台、设置有冷却液出口的冷却管，还包括设置于冷却液出口处的喷头，其特征在于，所述基板台支撑台底部非接触基板台的一侧面为中间凹、两侧高的底部弧面，所述喷头的一端连接冷却管，另一端喷口处设置有截面面积覆盖基板台支撑台底面面积的托水板。
2.根据权利要求1中的冷却结构，其特征在于还包括支撑台连接件、密封件、冷却液排出管接头，所述密封件用于基板台支撑台和支撑台连接件的密封，所述冷却液排出管接头设置于支撑台连接件的底部。
3.根据权利要求1中的冷却结构，其特征在于所述喷头的另一端喷口处设置的托水板呈弧形状与所述底部弧面形状匹配，托水板与底部弧面之间留有均匀的缝隙，基板台支撑台的柱段与托水板之间留有均匀的缝隙。
4.根据权利要求2中的冷却结构，其特征在于所述喷头与冷却管之间活动连接，以便于调整喷口与基板台支撑台之间的距离。
5.根据权利要求4中的冷却结构，其特征在于所述喷头与冷却管之间活动连接为螺纹连接，喷口与基板台支撑台的距离通过连接螺纹进行调节。
6.根据权利要求3中的冷却结构，其特征在于所述托水板与底部弧面之间的缝隙宽度为2～15mm，基板台支撑台的柱段与托水板之间的缝隙宽度为2～15mm。
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CN109402610A (zh) * 2018-10-12 2019-03-01 长沙新材料产业研究院有限公司 一种mpcvd设备基片台控温装置及方法

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CN109355702A (zh) * 2018-12-19 2019-02-19 长沙新材料产业研究院有限公司 一种用于降低cvd合成金刚石杂质含量的方法

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