WO2013145955A1 - Procédé et appareil de fabrication de fluor gazeux - Google Patents

Procédé et appareil de fabrication de fluor gazeux Download PDF

Info

Publication number
WO2013145955A1
WO2013145955A1 PCT/JP2013/054178 JP2013054178W WO2013145955A1 WO 2013145955 A1 WO2013145955 A1 WO 2013145955A1 JP 2013054178 W JP2013054178 W JP 2013054178W WO 2013145955 A1 WO2013145955 A1 WO 2013145955A1
Authority
WO
WIPO (PCT)
Prior art keywords
gas
fluorine
fluorinated interhalogen
interhalogen compound
fluorine gas
Prior art date
Application number
PCT/JP2013/054178
Other languages
English (en)
Japanese (ja)
Inventor
勇 毛利
章史 八尾
拓也 北
智典 梅崎
達夫 宮崎
Original Assignee
セントラル硝子株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by セントラル硝子株式会社 filed Critical セントラル硝子株式会社
Publication of WO2013145955A1 publication Critical patent/WO2013145955A1/fr

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00—Halogens; Halogen acids
    • C01B7/19—Fluorine; Hydrogen fluoride
    • C01B7/20—Fluorine

Definitions

  • the present invention relates to a method and apparatus for producing fluorine gas using a fluorinated interhalogen compound as a raw material.
  • Fluorine gas is a gas for cleaning processes of thin film forming devices such as substrate etching processes and CVD devices in the manufacturing process of semiconductor devices, MEMS devices, liquid crystal TFT panels and solar cells, or for the synthesis of fluoro products. It is used in a wide range of fluorinating agents.
  • Patent Document 1 a method of generating a fluorine gas by heating a fluorinating agent (Patent Document 1), a method of filling a cylinder with high-pressure fluorine gas and supplying it are well known.
  • Patent Document 2 A method of generating fluorine gas by decomposing has been proposed by the present applicant and is being put into practical use.
  • the fluorine-containing compound is excited under reduced pressure to generate active species, and then the pressure is increased to normal pressure or a pressurized state to generate the generated activity.
  • a method for producing a fluorine gas-containing gas in which all the species are substantially deactivated to generate fluorine gas is disclosed (Patent Document 3).
  • the on-site type fluorine gas generation device described in Patent Document 2 can generate a sufficient amount of fluorine gas necessary for cleaning, etc., but the device is large and complicated, and the device is manufactured. And running costs such as power consumption may increase.
  • the on-site type fluorine gas generation method described in Patent Document 3 is a simple apparatus structure that applies energy to a fluorine-containing compound-containing gas and excites it to generate fluorine gas.
  • a fluorine gas is generated by exciting a fluorinated interhalogen compound gas such as IF 7 or BrF 5 as a fluorine-containing compound gas, the following reaction formulas (1) and (2 The reaction proceeds through the equilibrium reaction shown in FIG.
  • the present invention has been made in view of the above problems, and an object of the present invention is to provide a simple method for producing fluorine gas in a large amount and safely using a fluorinated interhalogen compound as a raw material.
  • the present inventors excited a fluorinated interhalogen compound gas, and captured components other than the fluorine gas (low-order fluorinated interhalogen compound gas) in the decomposed gas product.
  • the present inventors have found that by collecting and quickly removing from the gas phase, the equilibrium reaction can be controlled, the regeneration of the higher-order fluorinated interhalogen compound gas can be suppressed, and the fluorine gas can be produced efficiently, leading to the present invention.
  • the present invention is a method for producing a fluorine gas using a fluorinated interhalogen compound as a raw material, and is a high-order fluorinated interhalogen compound gas (XF n : X is a halogen other than fluorine, and n is an integer of 3 to 7 )
  • XF n a high-order fluorinated interhalogen compound gas
  • XF n-2 a low-order fluorinated interhalogen compound gas
  • XF n-2 where X is a halogen other than fluorine and n is an integer of 3 to 7
  • It is a manufacturing method of fluorine gas including the process [2] of collecting interhalogenated compound gas.
  • the “fluorinated interhalogen compound” means a compound in which a bond is formed between a halogen other than fluorine and fluorine.
  • the higher order fluorinated interhalogen compound gas means a fluorinated interhalogen compound having 3 or more fluorine atoms.
  • the low-order fluorinated interhalogen compound gas means a fluorinated interhalogen compound in which the high-order fluorinated interhalogen compound gas is excited and decomposed and the number of fluorine atoms is reduced by the generation of fluorine.
  • the low-order fluorinated interhalogen compound gas collected in the step [2] is recovered, and the low-order fluorinated interhalogen compound gas is reacted with the fluorine gas to produce the high-order fluorination.
  • the recovered low-order fluorinated interhalogen compound gas can be reused as a raw material, it is possible to efficiently produce fluorine gas without wasting the recovered material. Become.
  • the purity of the fluorine gas can be increased and the utilization efficiency of halogen elements other than fluorine can be improved.
  • the low-order fluorinated interhalogen compound gas is used for the high-order fluorinated halogen. Regeneration into intermetallic gas can be suppressed. For this reason, when the fluorine gas is produced by exciting and decomposing the fluorinated interhalogen compound gas, it is possible to prevent the conversion efficiency of the fluorine gas from being lowered due to the equilibrium reaction. Therefore, it becomes possible to manufacture fluorine gas in large quantities and safely.
  • fluorine gas manufacturing apparatus It is the schematic of the fluorine gas manufacturing apparatus which can apply the method concerning this invention. It is an example of the fluorine gas manufacturing apparatus using a plasma excitation decomposition apparatus. It is an example of the fluorine gas manufacturing apparatus using a thermal excitation decomposition apparatus.
  • the fluorine gas production apparatus is disposed in a gas supply system of a semiconductor processing apparatus such as an etching or thin film forming process, and is used as a system for supplying fluorine gas.
  • a fluorine gas production apparatus 100 excites and decomposes a gas supply unit 30 that supplies a fluorinated interhalogen compound gas, and a fluorinated interhalogen compound gas that is introduced from the gas supply unit 30 to produce a fluorine gas.
  • a collection device 20 connected to a subsequent stage of the excitation decomposition device 10 for removing components other than fluorine gas.
  • the excitation decomposition apparatus 10 is connected to a supply pipe 10a for introducing a fluorinated interhalogen compound gas, which is a raw material of fluorine gas, into the excitation decomposition apparatus 10 and a lead-out pipe 10b for deriving a gas product generated by the excitation decomposition apparatus 10. Is done.
  • a collection device 20 for removing components other than fluorine gas from the gas product is connected downstream of the outlet pipe 10b.
  • the gas supply unit 30 may be a cylinder filled with gas, and the supply pipe 10a may be provided with a mass flow controller 31 for adjusting the gas flow rate.
  • the excitation decomposition apparatus 10 is not limited as long as it can apply energy to the fluorinated interhalogen compound gas and transition to an energy state higher than the ground state.
  • plasma excitation such as inductively coupled plasma (ICP), helicon wave plasma, or electron cyclotron resonance plasma (ECR), photoexcitation such as xenon lamp and excimer laser, photoexcitation such as laser irradiation, thermal excitation such as heating by electric furnace, etc.
  • ICP inductively coupled plasma
  • ECR electron cyclotron resonance plasma
  • photoexcitation such as xenon lamp and excimer laser
  • photoexcitation such as laser irradiation
  • thermal excitation such as heating by electric furnace, etc.
  • ICP inductively coupled plasma
  • a vacuum pump (not shown) for bringing the inside of the apparatus into a reduced pressure state is connected.
  • the piping connecting the excitation decomposition apparatus 10 and the vacuum pump may be made of stainless steel, Ni, Ni alloy, aluminum, aluminum alloy, copper or the like.
  • a fluorine passivating film may be formed on the surface of the gas contact portion of the pipe in order to prevent nitrogen, nitrogen fluoride, fluorine radicals and ions from passing therethrough. It is more preferable to use a material such as alumina or aluminum nitride.
  • the vacuum pump is not particularly limited as long as the inside of the apparatus can be kept in a reduced pressure state, and a general pump can be used. However, since an oil rotary pump easily reacts with oil and fluorine, a dry pump may be used. A pump with a purge mechanism for protecting the motor unit may be used. Also. Various gases such as N 2, Ar, and dry air can be used as the purge gas.
  • the gas contact part of the booster pump is a bellows pump made of metal such as stainless steel and fluororesin PTFE (polytetrafluoroethylene), PCTFE (polymonochlorotrifluoroethylene), PFA (perfluoroalkoxyalkane). Can be used.
  • the collection device 20 uses various types of devices that separate a fluorine gas component and a component other than fluorine gas (low-order fluorinated interhalogen compound gas) by utilizing the difference between the two condensation points (boiling points).
  • a fluorine gas component and a component other than fluorine gas low-order fluorinated interhalogen compound gas
  • an external jacket cooling method using a jacket through which a refrigerant or the like can be circulated or a cryogenic purification method in which cooling is performed by filling a jacket attached to the outer periphery of a trap through which gas is circulated with liquid nitrogen or the like may be used.
  • a cryogenic purification method when liquid argon is used, a Dewar bottle or the like may be used.
  • the collection device 20 is provided with a discharge pipe 20a for discharging the fluorine gas from which components other than the fluorine gas are removed, and downstream thereof for increasing the pressure of the gas discharged from the collection device 20.
  • a booster pump 50 and a buffer tank 53 for storing the pressurized gas may be provided in order.
  • a pressure adjusting valve 51 for adjusting the pressure in the reaction system to a desired value may be provided in the upstream stage of the booster pump 50 as shown in FIG.
  • the pressure in the system is adjusted to a predetermined pressure by a pressure adjustment valve 51 linked to the pressure gauge 52.
  • the fluorine gas stored in the buffer tank 53 and adjusted in pressure is introduced into the semiconductor processing apparatus.
  • a purification tower (not shown) for increasing the purity of the fluorine gas may be provided in the subsequent stage of the collection device 20 as necessary.
  • the purification tower is preferably filled with an alkali metal fluoride such as NaF, KF, RbF, or CsF for the purpose of removing impurities.
  • the position where the purification tower is provided is not particularly limited as long as it does not hinder the gas flow. For example, it may be provided between the booster pump 50 and the buffer tank 53.
  • the collection device 20 may be provided with a collection device 40 for collecting and storing components other than the collected fluorine gas.
  • the collection device 40 is connected to the collection device 20 via a discharge pipe 20 b provided in the collection device 20.
  • Components other than the fluorine gas (low-order fluorinated interhalogen compound gas) stored in the recovery device 40 are separately reacted with the fluorine gas to generate a high-order fluorinated interhalogen compound gas, and the raw material of the gas supply unit 30 can be used as
  • the recovery device 40 can use a gas cylinder such as a cylinder.
  • a low-order fluorinated halogen in which a fluorine gas discharge line (see FIG. 1) for extracting the generated fluorine gas is provided in the path of the buffer tank 53 and the discharge pipe 20a to collect the extracted fluorine gas.
  • the high-order fluorinated interhalogen compound gas generated by reacting with the intermetallic gas may be used as a raw material for the gas supply unit 30.
  • Step [1] excites a raw material high-order fluorinated interhalogen compound gas (XF n : X is a halogen other than fluorine, n is an integer of 3 to 7), and fluorine gas and a low-order fluorinated interhalogen compound
  • XF n-2 a gas product containing a gas
  • XF n-2 a gas product containing a gas
  • n is an integer of 3 to 7
  • a higher-order fluorinated interhalogen compound gas having 3 or more fluorine atoms capable of generating fluorine gas by applying energy and exciting can be used.
  • a fluorinated interhalogen compound gas in which the boiling point difference (vapor pressure difference) between the fluorine gas and the low-order fluorinated interhalogen compound gas is increased is preferable to use, for example, a compound gas of IF 7 , IF 5 , BrF 5 , or ClF 3 can be used.
  • the difference between the boiling point of the fluorine gas at atmospheric pressure and the melting point of the low-order fluorinated interhalogen compound gas is 30 ° C.
  • IF 7 is used as a raw material fluorinated interhalogen compound gas, more preferably 50 More than 100 degreeC, Most preferably, it is 100 degreeC or more.
  • the difference between the boiling point of the fluorine gas and the melting point of the low-order fluorinated interhalogen compound gas is particularly large, which is preferable.
  • the operating conditions of the apparatus are not particularly limited, but the supplied fluorinated interhalogen compound gas is excited and has a decomposition rate. It is set appropriately so as to be higher.
  • He, Ne, Ar, Xe, Kr, N 2 or a combination thereof can be used as the inert gas.
  • the method for mixing the fluorinated interhalogen compound gas and the inert gas is not particularly limited, and each mixed gas may be introduced into the reactor, or may be independently introduced into the reactor.
  • the pressure condition in the reaction vessel is not particularly limited as long as it is a pressure at which the plasma can be generated by reducing the pressure, but for example, it is preferably in the range of 1 to 200 torr (133 Pa to 26600 Pa). Further, the flow rate of the gas to be introduced depends on the size of the reaction vessel, but it is preferably performed in the range of, for example, 10 to 10,000 sccm.
  • the pressure of the reactor can be under atmospheric pressure, but it is preferably in the range of, for example, 1 to 1520 torr (133 to 202600 Pa).
  • the heating temperature of the reactor can be in the range of 350 to 450 ° C.
  • the flow rate of the gas to be introduced depends on the size of the reaction vessel, but it is preferably performed in the range of, for example, 10 to 10,000 sccm.
  • Step [2] is a low-order fluorinated interhalogen compound gas in the gas product produced in Step [1] (XF n-2 : X is a halogen other than fluorine, n is an integer n of 3 or more, and n is an integer) It is the process of collecting.
  • the low-order fluorinated interhalogen compound gas in the gas product produced in the step [1] is quickly removed from the gas phase, thereby obtaining a high-order fluorinated interhalogen compound. Regeneration into gas can be suppressed.
  • the temperature at which the low-order fluorinated interhalogen gas in the generated gas product is collected is ⁇ 186 to ⁇ 10 ° C. for IF 5 , ⁇ 186 to ⁇ 10 ° C. for BrF 3 , ClF 3 In this case, the temperature is preferably -186 to -150 ° C.
  • step [1] and step [2] may be repeated twice or more (see Example 5 described later).
  • step [3] of the present invention will be described.
  • the low-order fluorinated interhalogen compound gas collected in the step [2] is recovered, and the low-order fluorinated interhalogen compound gas and the fluorine gas are reacted to generate the high-order fluorinated halogen.
  • the intermetallic gas is reused as a raw material for the fluorinated interhalogen compound.
  • Step [3] collects the gas components (low-order fluorinated interhalogen compound gas) other than the fluorine gas collected in step [2], and uses the components other than the collected fluorine gas as the fluorine-containing material in step [1]. It is a process for reusing as a raw material for compound gas. Specifically, gas components other than the collected fluorine gas are desorbed by heating a gas cylinder such as a cylinder that collects the low-order fluorinated interhalogen compound gas by collection, and the obtained gas component is fluorinated. It is good to react with gas and use as a raw material of process [1].
  • the low-order fluorinated interhalogen compound gas is IF
  • the reaction is preferably carried out at a temperature range of 200 to 400 ° C., 200 to 400 ° C. for BrF 3 and 200 to 400 ° C. for ClF 3 .
  • the reaction pressure is not particularly limited as long as it is within a normal range.
  • the reaction pressure may be in the range of ⁇ 0.20 MPaG to 0.10 MPaG (gauge pressure).
  • Fluorine gas was produced using the apparatus shown in FIG. FIG. 2 is a detailed view showing the vicinity of the plasma excitation device used in the first embodiment.
  • the plasma excitation device 32 an inductively coupled plasma excitation device (manufactured by MKS, Inc., astronAX7685 type) was used.
  • the fluorinated interhalogen compound gas was supplied using an IF 7 filled container.
  • all the piping was made of stainless steel.
  • a vacuum pump 36 (dry pump) is provided downstream of the plasma device 32, a pressure gauge 35 and a pressure adjustment valve 34 are provided between the vacuum pump 36 and the plasma device 32, and the pressure gauge 52 and the pressure adjustment valve 51 are interlocked. The pressure in the system was adjusted.
  • a stainless steel container (collecting device 20) provided with a jacket for circulating the refrigerant was connected to the subsequent stage of the plasma device 32.
  • the refrigerant temperature was set to ⁇ 30 ° C.
  • a booster pump 50 was installed downstream of the collection device 20, and the pressure in the system was adjusted by linking the pressure gauge 52 and the pressure regulating valve 51 installed in the path.
  • IF 7 was vacuum-replaced between the container valve of the filling container and the booster pump 50, and further argon gas was introduced to set the pressure in the system to 4 torr (532 Pa). Thereafter, the pressure of the pressure gauge 35 was set to 4 torr (532 Pa), and the vacuum pump 36 and the booster pump 50 were started in this order with the pressure regulating valve 51 closed. Argon gas was circulated at 100 sccm, and when the pressure reached the set value, plasma discharge (excited decomposition) was started. Further, the container valve of the IF 7 filled container was opened, and the gas flow rate was supplied at 200 sccm via the mass flow controller 31 to stop the flow of argon gas. Thereafter, the pressure adjustment valve 34 was closed, the pressure of the pressure gauge 52 was set to 100 torr (13300 Pa), the pressure adjustment valve 51 was operated, and gas was circulated to the booster pump 50 side.
  • the gas was circulated, the gas was collected from a sampling line attached to the rear stage of the booster pump 50, and the gas was analyzed. As a result, the purity of fluorine was 99.4% by volume.
  • An ultraviolet-visible spectrophotometer manufactured by Hitachi, Model U-5100 was used to measure the purity of fluorine.
  • Example 2 Fluorine gas was produced under the same conditions as in Example 1 except that BrF 5 was used as the raw material fluorinated interhalogen gas. As a result, after the gas was circulated, the gas was collected from a sampling line attached to the subsequent stage of the booster pump 50, and the gas was analyzed. The purity of fluorine was 97.8% by volume.
  • Example 3 Fluorine gas was produced under the same conditions as in Example 1 except that ClF 3 was used as the raw material fluorinated interhalogen compound gas and the refrigerant temperature was ⁇ 194 ° C. As a result, after the gas was circulated, the gas was collected from a sampling line attached to the rear stage of the booster pump 50, and the gas was analyzed. As a result, the purity of fluorine was 99.2% by volume.
  • FIG. 3 is a detailed view showing the vicinity of the heating excitation device used in Example 4. Fluorine gas was produced under the same experimental conditions as in Example 1 except that the excitation device was a heating system.
  • the outer peripheral temperature of the reactor 33 was set to 350 ° C., and the external jacket temperature of the collection device 20 was set to ⁇ 50 ° C. After setting the pressure in the system to 760 torr (0.10 MPa), the container valve of the IF7 filled container was opened, and the gas flow rate was supplied at 200 sccm via the mass flow controller 31 (FIG. 1).
  • the gas was circulated, the gas was collected from a sampling line (not shown) attached to the subsequent stage of the booster pump 50, and the gas was analyzed. As a result, the purity of fluorine was 96.0% by volume.
  • Example 5 Fluorine gas was produced under the same conditions as in Example 4 except that the reactor 33 and the collection device 20 were alternately connected in two series.
  • the gas was collected from a sampling line (not shown) attached to the subsequent stage of the booster pump 50, and the gas was analyzed.
  • the purity of the fluorine was 97.5% by volume. From Example 4, it can be seen that the purity of the fluorine gas can be improved by heating the gas that has passed through the collection device 20 again and then allowing the gas to flow through the collection device 20.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Treating Waste Gases (AREA)

Abstract

L'invention concerne un procédé de fabrication d'un fluor gazeux, qui comprend : une étape [1] d'excitation d'un gaz composite inter-halogène fluoré supérieur (XFn : dans lequel X représente un atome d'halogène autre qu'un atome de fluor ; et n représente un entier de 3 à 7) pour générer un fluor gazeux et un gaz composite inter-halogène fluoré inférieur (XFn-2 : dans lequel X représente un atome d'halogène autre qu'un atome de fluor ; et n représente un entier de 3 à 7) ; et une étape [2] de capture du gaz composite inter-halogène fluoré inférieur. La méthode permet la fabrication d'un fluor gazeux à partir d'un gaz inter-halogène fluoré en grande quantité et sans danger.
PCT/JP2013/054178 2012-03-28 2013-02-20 Procédé et appareil de fabrication de fluor gazeux WO2013145955A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012-072680 2012-03-28
JP2012072680A JP2013203571A (ja) 2012-03-28 2012-03-28 フッ素ガスの製造方法とその装置

Publications (1)

Publication Number Publication Date
WO2013145955A1 true WO2013145955A1 (fr) 2013-10-03

Family

ID=49259237

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2013/054178 WO2013145955A1 (fr) 2012-03-28 2013-02-20 Procédé et appareil de fabrication de fluor gazeux

Country Status (3)

Country Link
JP (1) JP2013203571A (fr)
TW (1) TW201348136A (fr)
WO (1) WO2013145955A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017179458A1 (fr) * 2016-04-11 2017-10-19 セントラル硝子株式会社 Procédé de purification d'un composé interhalogéné fluoré
JP2017190284A (ja) * 2016-04-11 2017-10-19 セントラル硝子株式会社 フッ素化ハロゲン間化合物の精製方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017013916A1 (fr) * 2015-07-23 2017-01-26 セントラル硝子株式会社 Procédé de production de pentafluorure d'iode
JP6687843B2 (ja) * 2015-07-23 2020-04-28 セントラル硝子株式会社 五フッ化ヨウ素の製造方法
CN114314513B (zh) * 2021-12-31 2023-05-12 四川红华实业有限公司 一种三氟化氯氟化低价态氟化物的方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003327412A (ja) * 2002-05-13 2003-11-19 Central Glass Co Ltd フッ素の発生方法
JP2004039740A (ja) * 2002-07-01 2004-02-05 Research Institute Of Innovative Technology For The Earth フッ素ガスによるクリーニング機構を備えたｃｖｄ装置およびｃｖｄ装置のフッ素ガスによるクリーニング方法
WO2005095268A1 (fr) * 2004-03-31 2005-10-13 Kanto Denka Kogyo Co., Ltd. Méthode de production de gaz contenant du f2, appareil de production de gaz contenant du f2, méthode de modification de la surface de l'article et appareil permettant de modifier la surface de l'article
JP2006272265A (ja) * 2005-03-30 2006-10-12 Kanto Denka Kogyo Co Ltd フッ素含有ガスによる表面改質方法及びその装置
JP2007161517A (ja) * 2005-12-13 2007-06-28 Central Glass Co Ltd Ｆ２ガスの製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003327412A (ja) * 2002-05-13 2003-11-19 Central Glass Co Ltd フッ素の発生方法
JP2004039740A (ja) * 2002-07-01 2004-02-05 Research Institute Of Innovative Technology For The Earth フッ素ガスによるクリーニング機構を備えたｃｖｄ装置およびｃｖｄ装置のフッ素ガスによるクリーニング方法
WO2005095268A1 (fr) * 2004-03-31 2005-10-13 Kanto Denka Kogyo Co., Ltd. Méthode de production de gaz contenant du f2, appareil de production de gaz contenant du f2, méthode de modification de la surface de l'article et appareil permettant de modifier la surface de l'article
JP2006272265A (ja) * 2005-03-30 2006-10-12 Kanto Denka Kogyo Co Ltd フッ素含有ガスによる表面改質方法及びその装置
JP2007161517A (ja) * 2005-12-13 2007-06-28 Central Glass Co Ltd Ｆ２ガスの製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017179458A1 (fr) * 2016-04-11 2017-10-19 セントラル硝子株式会社 Procédé de purification d'un composé interhalogéné fluoré
JP2017190284A (ja) * 2016-04-11 2017-10-19 セントラル硝子株式会社 フッ素化ハロゲン間化合物の精製方法

Also Published As

Publication number Publication date
JP2013203571A (ja) 2013-10-07
TW201348136A (zh) 2013-12-01

Similar Documents

Publication Publication Date Title
WO2013145955A1 (fr) Procédé et appareil de fabrication de fluor gazeux
EP1731480B1 (fr) Méthode de production de gaz contenant du f2 et méthode de modification de la surface de l'article
JP4634199B2 (ja) フッ素含有ガスによる表面改質方法及びその装置
US10926211B2 (en) Method for purifying fluorine compound gas
JP6169668B2 (ja) フッ素供給方法
TWI525043B (zh) Recovery method and recovery unit of iodinated iodide compound derived from iodine iodide
JP6867581B2 (ja) フッ素ガスの精製方法
EP3441362A1 (fr) Procédé d'alimentation en fluorure de chlore
JP2015534722A (ja) Ｆ２を用いたチャンバーの洗浄方法及びこの方法のためのｆ２の製造プロセス
KR20120104214A (ko) 증착물 제거 방법
JP4621126B2 (ja) Ｆ２ガスの製造方法
JP2007176770A (ja) 高純度フッ素ガスの製造方法および高純度フッ素ガス製造装置
JP4230169B2 (ja) フッ素の発生方法
JP2003081614A (ja) 高純度フッ素ガスおよびその製造方法並びにその用途
JP2007176768A (ja) フッ素ガスの製造方法
WO2017138367A1 (fr) Procédé permettant de purifier du fluor gazeux
JP5402605B2 (ja) フッ素ガス生成装置
JP5402604B2 (ja) フッ素ガス生成装置
EP2555850B1 (fr) Procédé de fabrication de dispositifs électroniques avec du fluor épuré
JP2015129068A (ja) フッ素ガスの製造方法
JP2004011001A (ja) フッ素電解槽
JP5402608B2 (ja) フッ素ガス生成装置
WO2010113689A1 (fr) Procédé permettant de purifier un gaz fluoré
JP2010138029A (ja) Ｎｆ３又は塩化フッ素化合物の製造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 13767774

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 13767774

Country of ref document: EP

Kind code of ref document: A1