WO2013145540A1 - 赤外線放射素子およびその製造方法 - Google Patents

赤外線放射素子およびその製造方法 Download PDF

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Publication number
WO2013145540A1
WO2013145540A1 PCT/JP2013/001051 JP2013001051W WO2013145540A1 WO 2013145540 A1 WO2013145540 A1 WO 2013145540A1 JP 2013001051 W JP2013001051 W JP 2013001051W WO 2013145540 A1 WO2013145540 A1 WO 2013145540A1
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Prior art keywords
substrate
infrared radiation
radiation element
layer
opening
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PCT/JP2013/001051
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English (en)
French (fr)
Japanese (ja)
Inventor
桐原　昌男
辻　幸司
吉祥 永谷
弘貴 松浪
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パナソニック株式会社
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Publication of WO2013145540A1 publication Critical patent/WO2013145540A1/ja

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/02—Details
    • G01J3/0256—Compact construction
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/02—Details
    • G01J3/10—Arrangements of light sources specially adapted for spectrometry or colorimetry
    • G01J3/108—Arrangements of light sources specially adapted for spectrometry or colorimetry for measurement in the infrared range
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/0004—Gaseous mixtures, e.g. polluted air
    • G01N33/0009—General constructional details of gas analysers, e.g. portable test equipment

Definitions

  • the present invention relates to an infrared emitting element and a method of manufacturing the same.
  • an infrared radiation element an infrared radiation element manufactured using a semiconductor process or the like has been researched and developed.
  • This type of infrared radiation element can be used as an infrared source such as a gas sensor or an optical analyzer.
  • an infrared radiation element of this type for example, an infrared light source 100 having a configuration shown in FIGS. 8A and 8B is known (Japanese Patent Application Publication No. 2005-207891: Patent Document 1).
  • the infrared light source 100 includes a substrate 110, a membrane 120 provided on the substrate 110 as a thin portion including the resistor 115, and a condensing lens 130 provided on the surface of the membrane 120 as a condensing member. It is done.
  • the substrate 110 is a semiconductor substrate made of silicon, and has a hollow portion 111 corresponding to the formation region of the membrane 120.
  • the membrane 120 including the resistor 115 is formed in a floating state on the hollow portion 111 with respect to the substrate 110, and is formed to be thinner than other portions of the infrared light source 100.
  • a silicon nitride film 112 is provided on the lower surface of the substrate 110, and an insulating film 113 (for example, a silicon nitride film) is provided on the upper surface of the substrate 110. Then, a silicon oxide film 114 is provided on the insulating film 113.
  • a resistor 115 made of a polycrystalline silicon film is provided in a predetermined shape.
  • a wiring portion 117 electrically connecting the resistor 115 and the pad portion 117a is connected to the resistor 115 via an interlayer insulating film 116 made of BPSG (boron-doped phospho-silicate glass).
  • a protective film 118 (for example, a silicon nitride film) is provided on the wiring portion 117 excluding the pad portion 117a. Therefore, in the infrared light source 100, the membrane 120 is configured by the insulating film 113, the silicon oxide film 114, the resistor 115, the interlayer insulating film 116, the wiring portion 117, and the protective film 118 on the hollow portion 111 of the substrate 110.
  • the infrared light source 100 is a condensing lens as a condensing member that condenses infrared radiation emitted by causing the resistor 115 to generate heat on the protective film 118 in the formation region of the membrane 120. 130 are provided.
  • the condensing lens 130 is a concave lens formed by processing a silicon oxide film so that the upper surface 130 a facing the surface in contact with the protective film 118 has a concave shape having a predetermined radius as shown in FIG. 8B. is there.
  • the infrared light source 100 since the upper surface 130a that emits infrared light to the infrared sensor has a concave shape having a predetermined R, the infrared light emitted from the condensing lens 130 is condensed to the infrared sensor Be done.
  • the infrared light source 100 is provided such that the optical axis of the condenser lens 130 substantially coincides with the center position of the resistor 115.
  • Patent Document 1 describes that the condensing lens 130 is formed using a semiconductor process. That is, in Patent Document 1, a silicon oxide film is formed, for example, by the CVD method in the formation region of the membrane 120 on the protective film 118, and the silicon oxide film is processed using photolithography technology and etching technology. Thus, it is described that the condenser lens 130 is formed.
  • the infrared radiation element is intermittently driven by intermittently driving the infrared radiation element to lock the output of the light receiving element for detecting the infrared ray. It is known that the S / N ratio of the output of the infrared type gas sensor can be improved by amplifying with an amplifier.
  • the thickness of the silicon oxide film that is the source of the condensing lens 130 is limited based on R of the upper surface 130a of the condensing lens 130.
  • the present invention has been made in view of the above-described problems, and an object thereof is to provide an infrared radiation element capable of improving directivity and capable of achieving high output and a method of manufacturing the same.
  • the infrared radiation element of the present invention comprises a substrate, a thin film portion provided on one surface side of the substrate, and a heating element layer provided on the thin film portion on the opposite side of the substrate side, the heat generation It is an infrared radiation element in which infrared rays are emitted from the heat generating body layer by energization to a body layer, and in the substrate, the thickness of the opening portion which exposes the surface of the thin film portion opposite to the heat generating body layer side
  • the thin film portion is provided in the peripheral portion of the opening portion on the one surface side of the substrate, the diaphragm portion separating the opening portion from the heating element layer, and the diaphragm A supporting portion for supporting a portion, and the diaphragm portion includes a recess having a recess on the side of the opening and the inner surface being a concave surface, and the heat generating body layer is formed at least along the inner surface of the recess It is characterized by
  • the concave surface is preferably in the form of a rotational quadric surface.
  • the diaphragm portion is provided with a plurality of the concave portions in an array.
  • the outer peripheral shape of the diaphragm portion is circular.
  • the outer peripheral shape of the diaphragm portion is rectangular.
  • a method of manufacturing an infrared radiation element is the method of manufacturing the infrared radiation element, wherein a first step of forming a recess for forming a recess of the diaphragm on the one surface side of the substrate; A second step of forming a thin film portion on the one surface side of the substrate after the first step; a third step of forming the heating element layer on the thin film portion after the second step; Forming a diaphragm portion provided with the concave portion by etching the formation scheduled region of the opening in the substrate from the other surface side of the substrate after the third step; I assume.
  • the directivity can be improved and the output can be increased.
  • an infrared radiation element of the present invention it is possible to provide an infrared radiation element capable of improving directivity and capable of achieving high output.
  • FIG. 1A is a schematic plan view of the infrared radiation element of Embodiment 1.
  • FIG. 1B is a schematic cross-sectional view of the infrared radiation element of Embodiment 1.
  • 2A to 2E are main process cross-sectional views for explaining the method of manufacturing the infrared radiation element of Embodiment 1.
  • FIG. 3 is an operation explanatory view of the infrared radiation element of the first embodiment.
  • FIG. 4 is an operation explanatory view of the infrared ray emitting element of the comparative example.
  • FIG. 5A is a schematic plan view of the infrared radiation element of Embodiment 2.
  • FIG. 5B is a schematic cross-sectional view of the infrared radiation element of Embodiment 2.
  • FIG. 6A to 6E are main process cross-sectional views for explaining the method of manufacturing the infrared radiation device of the second embodiment.
  • FIG. 7 is an operation explanatory view of the infrared radiation element of the second embodiment.
  • FIG. 8A is a plan view of a conventional infrared light source.
  • FIG. 8B is a cross-sectional view taken along line AA of FIG. 8A.
  • the infrared radiation element 1 comprises a substrate 2, a thin film portion 5 provided on one surface side of the substrate 2, and a heating element layer 3 provided on the thin film portion 5 opposite to the substrate 2 side. There is.
  • infrared radiation element 1 infrared rays are emitted from the heat generating body layer 3 by energization to the heat generating body layer 3.
  • an opening 2 a for exposing the surface of the thin film portion 5 on the opposite side to the heating element layer 3 side is penetrated in the thickness direction.
  • the thin film portion 5 is a diaphragm 51 separating the opening 2 a from the heating element layer 3, and a support 52 provided on the periphery of the opening 2 a on the one surface side of the substrate 2 and supporting the diaphragm 51. And have.
  • the diaphragm part 51 is provided with the recessed part 53 indented to the opening part 2a side.
  • the inner surface 53a is a concave surface.
  • the heating element layer 3 is formed along the inner surface 53 a of the recess 53.
  • the heating element layer 3 may be formed along at least the inner surface 53 a of the recess 53.
  • the infrared radiation element 1 is provided with a pair of pads 7 formed so as to be partially in contact with the heating element layer 3 on the one surface side of the substrate 2.
  • the infrared radiation element 1 may be provided with a wire between each of the pads 7 and the heating element layer 3.
  • the substrate 2 is formed of a single crystal silicon substrate of which the one surface is a (100) plane, but is not limited to this, and may be formed of a single crystal silicon substrate of a (110) plane. Further, the substrate 2 is not limited to a single crystal silicon substrate, and may be a polycrystalline silicon substrate or may be other than a silicon substrate.
  • the material of the substrate 2 is preferably a material having a larger thermal conductivity and a larger heat capacity than the material of the thin film portion 5.
  • the outer peripheral shape of the substrate 2 is rectangular.
  • the outer size of the substrate 2, that is, the chip size is not particularly limited, but is preferably set to, for example, 10 mm ⁇ 10 mm or less.
  • the substrate 2 has a circular shape in the opening 2a.
  • the opening 2a of the substrate 2 is formed in a shape such that the opening area is substantially constant from the one surface side of the substrate 2 to the other surface side.
  • the opening 2a of the substrate 2 can be formed, for example, by etching using an inductive coupling plasma type dry etching apparatus.
  • the infrared radiation element 1 may have a mask layer on the other surface side of the substrate 2 when the opening 2 a is formed. Note that, for example, a stacked film of a silicon oxide film and a silicon nitride film can be used as the mask layer.
  • the thin film portion 5 is provided on the peripheral portion of the opening portion 2a on the one surface side of the substrate 2 with the diaphragm portion 51 separating the opening portion 2a and the heating element layer 3 from each other. And a supporting portion 52 for supporting.
  • the diaphragm portion 51 has a circular outer peripheral shape. That is, as described above, the infrared radiation element 1 has a circular opening shape of the opening 2a, and the diaphragm 51 viewed from the other surface side of the substrate 2 has a circular shape.
  • the thin film portion 5 can be constituted of, for example, a silicon oxide film on the side of the substrate 2 and a silicon nitride film stacked on the opposite side of the silicon oxide film to the side of the substrate 2.
  • the laminated structure of the thin film portion 5 is not particularly limited.
  • the layer structure of the thin film portion 5 is not limited to the laminated structure of a silicon oxide film and a silicon nitride film, but may be a single layer structure of a silicon oxide film or a silicon nitride film, or a single layer structure made of other materials It may be a laminated structure of layers or more.
  • the thin film portion 5 also has a function as an etching stopper layer when forming the opening 2 a by etching the substrate 2 from the other surface side of the substrate 2 at the time of manufacturing the infrared radiation element 1.
  • the diaphragm portion 51 is provided with the concave portion 53 whose concave inner surface 53a is a concave surface on the side of the opening 2a. It is preferable that the concave curved surface which comprises the inner surface 53a of the recessed part 53 is rotation quadric surface shape.
  • the concave surface forming the inner surface 53a of the concave portion 53 is a concave surface having a substantially constant radius of curvature, but may be, for example, a paraboloid of revolution, as long as it is a shape of a rotational quadric surface.
  • the concave surface forming the inner surface 53a of the concave portion 53 may be configured to be a part of an aspheric surface whose curvature changes continuously, and is not limited to the paraboloid of revolution, for example, a hyperboloid It may be in the form of
  • the heat generating layer 3 has a rectangular outer peripheral shape. That is, the heat generating layer 3 has a rectangular shape in a plan view.
  • the plan view shape of the heat generating layer 3 is not limited to the rectangular shape, and may be, for example, a circular shape or a polygonal shape.
  • the heat generating body layer 3 is formed in the magnitude
  • the heat generating body layer 3 may be smaller than the outer peripheral shape of the diaphragm portion 51 in plan view, and in this case, a wire made of a metal film electrically connecting the heat generating body layer 3 and each of the pads 7 is provided. Just do it.
  • the central axis (not shown) along the thickness direction of the substrate 2 in the heating element layer 3 is aligned with the central axis along the thickness direction of the substrate 2 in the diaphragm portion 51
  • the heating element layer 3 is designed in a pattern.
  • the surface of the portion of the heat generating layer 3 stacked in the recess 53 has a concave surface (for example, a rotational quadratic surface) along the inner surface 53 a of the recess 53.
  • the film thickness of the heating element layer 3 is set.
  • tantalum nitride is used as a material of the heat generating body layer 3, it is not limited thereto.
  • the material of the heating element layer 3 is, for example, titanium nitride, nickel chromium, tungsten, titanium, thorium, platinum, zirconium, chromium, vanadium, rhodium, hafnium, ruthenium, boron, iridium, niobium, molybdenum, tantalum, osmium, rhenium, Nickel, holmium, cobalt, erbium, yttrium, iron, scandium, thulium, palladium, lutetium or the like may be employed.
  • a material of the heat generating layer 3 conductive polysilicon, conductive amorphous silicon or the like may be employed.
  • the material of the heat generating body layer 3 the material of the substrate 2 from the viewpoint of preventing the heat generating body layer 3 from being broken due to the thermal stress caused by the difference in linear expansion coefficient between the substrate 2 and the heat generating body layer 3.
  • a material having a small difference in coefficient of linear expansion with is preferable.
  • the total thickness of the thickness of the thin film portion 5 and the thickness of the heating element layer 3 is preferably set, for example, in the range of about 0.1 ⁇ m to 10 ⁇ m.
  • the pair of pads 7 is formed such that parts of both ends (left and right ends in FIGS. 1A and 1B) of the heating element layer 3 are in contact with each other on the one surface side of the substrate 2. Each pad 7 is in ohmic contact with the heating element layer 3.
  • each pad 7 As a material of each pad 7, Al-Si which is a kind of aluminum alloy is adopted.
  • the material of each pad 7 is not particularly limited, and, for example, an aluminum alloy other than Al-Si, gold, copper or the like may be adopted.
  • Each pad 7 may be made of any material that allows at least a portion in contact with the heat generating layer 3 to be in ohmic contact with the heat generating layer 3, and is not limited to a single layer structure, and may be a multilayer structure.
  • each pad 7 has a three-layer structure in which a first layer, a second layer, and a third layer are sequentially stacked from the heat generating body layer 3 side, and the material of the first layer in contact with the heat generating body layer 3 is a high melting point metal
  • the material of the second layer may be nickel, and the material of the third layer may be gold.
  • the thickness of each pad 7 is preferably set in the range of about 0.5 to 2 ⁇ m.
  • a substrate 2 made of a single crystal silicon substrate having a (100) plane is prepared (see FIG. 2A).
  • a first step of forming a recess 23 for forming the recess 53 of the diaphragm 51 on the one surface side of the substrate 2 is performed to obtain a structure shown in FIG. 2B.
  • a first silicon oxide film 21 is formed on the one surface side of the substrate 2 by a thermal oxidation method, a CVD (Chemical Vapor Deposition) method or the like, and a second silicon oxide film on the other surface side.
  • the first silicon oxide film 21 is patterned using photolithography technology and etching technology.
  • the substrate 2 is isotropically etched from the one surface side to form a recess 23.
  • the first silicon oxide film 21 and the second silicon oxide film 22 are removed by etching, and then the second step of forming the thin film portion 5 on the one surface side of the substrate 2 is performed. , The structure shown to FIG. 2C is obtained.
  • a CVD method or the like can be employed as a method of forming the thin film portion 5.
  • the third step of forming the heating element layer 3 on the thin film portion 5 is performed.
  • a method of forming the heat generating body layer 3 a sputtering method, a vapor deposition method, a CVD method or the like can be adopted.
  • each pad 7 After the third step, after each pad 7 is formed (see FIG. 2D), a region including the opening 2a in the substrate 2 is etched from the other surface side of the substrate 2 to etch the diaphragm 53 having the recess 53. By performing the fourth step of forming the portion 51, the infrared radiation element 1 having the structure shown in FIG. 2E is obtained.
  • a thin film formation technique such as a sputtering method, an evaporation method, a CVD method, etc., and a photolithography technique and an etching technique can be used.
  • a mask material layer formed of a laminated film (not shown) of a silicon oxide film and a silicon nitride film is formed on the other surface side of the substrate 2 by the CVD method or the like. Thereafter, the mask material layer is patterned using photolithography technology and etching technology to form a mask layer, and then the substrate 2 is etched from the other surface side to form the opening 2a.
  • the opening 2a of the substrate 2 can be formed, for example, by etching using an inductive coupling plasma type dry etching apparatus.
  • the thin film portion 5 can be used as an etching stopper layer at the time of forming the opening portion 2 a, so that the thickness accuracy of the thin film portion 5 can be enhanced. It is possible to prevent a part or residue of the substrate 2 from remaining on the side of the opening 2a. Further, in the method of manufacturing the infrared radiation element 1, by using the thin film portion 5 as an etching stopper layer at the time of forming the opening portion 2a, it becomes possible to increase the accuracy of the thickness of the thin film portion 5 It is possible to suppress the variation of the mechanical strength of the thin film portion 5 and the variation of the heat capacity of the diaphragm portion 51 for each unit.
  • the process until the formation of the opening 2a is completed may be performed at the wafer level to form the opening 2a, and then the infrared radiation element 1 may be separated. That is, in the manufacture of the infrared radiation element 1, for example, a silicon wafer to be a base of the substrate 2 is prepared, and a plurality of infrared detection elements 1 are formed on this silicon wafer according to the above manufacturing method. It may be separated into the detection element 1.
  • the peak wavelength ⁇ of the infrared ray emitted from the heat generating layer 3 in the infrared emitting element 1 depends on the temperature of the heat generating layer 3.
  • the peak wavelength ⁇ is ⁇ [ ⁇ m] and the absolute temperature of the heat generating body layer 3 is T [K]
  • the relationship between the absolute temperature T of the heat generating body layer 3 and the peak wavelength ⁇ of the infrared ray emitted from the heat generating body layer 3 satisfies the Wien's displacement law.
  • the heating element layer 3 constitutes a pseudo black body.
  • the infrared radiation element 1 can change the Joule heat generated in the heating element layer 3 by, for example, adjusting the input power to be applied between the pair of pads 7 and 7 from an external power supply (not shown). Can change the temperature of the Therefore, the infrared radiation element 1 can change the temperature of the heat generating layer 3 in accordance with the maximum input power to the heat generating layer 3, and changes the temperature of the heat generating layer 3.
  • the infrared radiation element 1 can be used as a high output infrared source in a wide range of infrared wavelength range.
  • the infrared radiation element 1 when used as an infrared source of a gas sensor, it is preferable to set the peak wavelength ⁇ of infrared radiation emitted from the heating element layer 3 to about 4 ⁇ m, and the temperature of the heating element layer 3 is about 800 K do it.
  • the heating element layer 3 constitutes a pseudo black body as described above.
  • the infrared radiation element 1 is considered to assume that the total energy E emitted per unit time of the heating element layer 3 is substantially proportional to T 4 (that is, satisfying the Stefan-Boltzmann's law) I guess).
  • the infrared radiation element 1 of the present embodiment described above includes a substrate 2, a thin film portion 5 provided on one surface side of the substrate 2, and a heating element provided on the thin film portion 5 opposite to the substrate 2 side. And a layer 3.
  • an opening 2a for exposing the surface of the thin film 5 on the opposite side to the heating element layer 3 is formed in the substrate 2
  • the thin film 5 is an opening A diaphragm 51 for separating the heat generating body layer 3 from each other and a support 52 provided on the periphery of the opening 2 a on the one surface side of the substrate 2 and supporting the diaphragm 51 are provided.
  • the diaphragm portion 51 is provided with a recess 53 which is recessed toward the opening 2a, and the inner surface 53a of the recess 53 is a concave surface.
  • the heating element layer 3 is formed along the inner surface 53 a of the recess 53.
  • the concave curved surface which comprises the inner surface 53a of the recessed part 53 is rotation quadric surface shape. As a result, the infrared radiation element 1 can improve the directivity in the front direction (the upper direction in FIG. 1B).
  • FIG. 3 is a diagram for explaining the operation of the infrared radiation element 1, in which the radiation direction of the infrared radiation emitted from the heating element layer 3 when energized between the pair of pads 7 is schematically shown by a solid line with an arrow. is there.
  • FIG. 4 is an operation explanatory view of the infrared ray emitting element 1 ′ of the comparative example in which the diaphragm portion 51 is flat and the surface of the heat generating layer 3 is flat.
  • the radiation direction of the infrared rays emitted from the heating element layer 3 is schematically shown by a solid line with an arrow.
  • FIG. 4 is an operation explanatory view of the infrared ray emitting element 1 ′ of the comparative example in which the diaphragm portion 51 is flat and the surface of the heat generating layer 3 is flat.
  • the radiation direction of the infrared rays emitted from the heating element layer 3 is schematically shown by a solid line with an arrow.
  • the irradiation unit 10 is, for example, a light receiving element that receives infrared light.
  • the surface of the portion of the heating element layer 3 stacked on the diaphragm portion 51 has a concave surface.
  • the infrared radiation element 1 emits radiation as shown in FIG. 3 as compared with the non-directional one in which infrared rays are radiated isotropically as in the infrared radiation element 1 ′ of the comparative example shown in FIG.
  • the irradiation unit 10 is a light receiving element, it is possible to improve the light receiving efficiency of the light receiving element.
  • the infrared radiation element 1 of the present embodiment is a laminated including the diaphragm portion 51 as compared with the infrared light source 100 having the condensing lens 130 as in the conventional example shown in FIGS. 8A and 8B while improving the directivity. It is possible to reduce the heat capacity of the entire structure. Therefore, since the infrared radiation element 1 can accelerate the response of the temperature change of the heat generating body layer 3 to the voltage waveform applied between the pair of pads 7, the temperature of the heat generating body layer 3 tends to rise. It is possible to achieve high output and high response speed.
  • the substrate 2 is formed of a single crystal silicon substrate, and the thin film portion 5 is configured of a silicon oxide film and a silicon nitride film.
  • the infrared radiation element 1 has a large thermal capacity and thermal conductivity of the substrate 2 as compared to the thin film portion 5 and the substrate 2 has a function as a heat sink. It is possible to improve the stability of the radiation characteristics.
  • the temperature of the heating body layer 3 is the maximum use temperature of silicon (from the melting point of silicon It is possible to raise the temperature to a somewhat lower temperature), and it is possible to significantly increase the amount of infrared radiation as compared to the infrared light emitting diode.
  • the infrared radiation element 1 is formed of a metal having a melting point higher than that of silicon, at least a portion of each pad 7 in contact with the heating element layer 3, the temperature of the heating element layer 3 is restricted by the material of each pad 7. Can be raised without
  • directivity can be improved by including the above-described first step, second step, third step and fourth step. It is possible to provide an infrared radiation element 1 which is capable of achieving high output.
  • the infrared rays radiating element 1 of this embodiment is demonstrated based on FIG. 5A and 5B.
  • symbol is attached
  • the plurality of concave portions 53 are provided in the diaphragm portion 51 in an array (in the illustrated example, a two-dimensional array). That is, the diaphragm unit 51 is provided with a plurality of concave portions 53. As in the first embodiment, each recess 53 is recessed toward the opening 2 a, and the inner surface 53 a is a concave surface.
  • the infrared radiation elements 1 be arranged such that, for example, the recesses 53 have a two-dimensional periodic structure in a two-dimensional plane orthogonal to the thickness direction of the substrate 2. In the example shown in FIGS.
  • each recess 53 is located at each lattice point of a virtual two-dimensional square lattice having a square unit cell, but the invention is not limited thereto.
  • a unit lattice The center of each recess 53 may be located at each grid point of a virtual two-dimensional triangular grid of an equilateral triangle.
  • the infrared radiation element 1 may have, for example, a configuration in which a plurality of concave portions 53 are spaced apart in the circumferential direction on one virtual circle.
  • the infrared radiation element 1 may have, for example, a configuration in which a plurality of concave portions 53 are spaced apart on a virtual spiral having a spiral shape in a two-dimensional surface.
  • the diaphragm part 51 makes the magnitude
  • the plurality of recesses 53 are preferably arranged in line symmetry with the center line of the heat generating layer 3 along the direction in which the pair of pads 7 and 7 are arranged and the direction orthogonal to the thickness direction of the substrate 2 as a symmetry axis. .
  • the infrared radiation element 1 suppresses the in-plane variation of the temperature of the heat generating layer 3 compared to the case where the plurality of recesses 53 are not arranged in line symmetry with the center line of the heat generating layer 3 as a symmetry axis. It becomes possible.
  • the substrate 2 has a rectangular shape in the opening 2a.
  • the opening 2 a of the substrate 2 is formed in a shape in which the opening area on the other surface side is larger than that of the one surface side of the substrate 2.
  • the opening 2 a of the substrate 2 is formed in such a shape that the opening area gradually increases as the distance from the thin film portion 5 in the thickness direction of the substrate 2 increases.
  • the opening 2 a of the substrate 2 is formed by etching the substrate 2.
  • the opening 2a of the substrate 2 can be formed by anisotropic etching using an alkaline solution as an etching solution, for example, when the substrate 2 is a (100) plane single crystal silicon substrate.
  • the heat generating layer 3 has a rectangular outer peripheral shape. That is, the heat generating layer 3 has a rectangular shape in a plan view.
  • the planar shape is rectangular, it is not particularly limited to the rectangular, and may be, for example, circular or polygonal.
  • the thin film portion 5 is provided on the peripheral portion of the opening 2 a on the one surface side of the substrate 2, the diaphragm 51 separating the opening 2 a from the heating element layer 3. And a support portion 52 for supporting the The diaphragm portion 51 has a rectangular outer peripheral shape. That is, in the infrared radiation element 1, as described above, the opening shape of the opening 2a is rectangular, and the shape of the diaphragm 51 viewed from the other surface side of the substrate 2 is rectangular.
  • the heat generating layer 3 has a rectangular outer peripheral shape. That is, the heat generating layer 3 has a rectangular shape in a plan view.
  • the plan view shape of the heat generating layer 3 is not limited to the rectangular shape, and may be, for example, a circular shape or a polygonal shape.
  • the surface of the portion of the heat generating layer 3 stacked in the recess 53 has a concave surface (for example, a rotational quadratic surface) along the inner surface 53 a of the recess 53. It is preferable to set the film thickness of the heating element layer 3.
  • a substrate 2 made of a single crystal silicon substrate having a (100) plane is prepared (see FIG. 6A).
  • a first step of forming a plurality of depressions 23 for forming each of the recesses 53 of the diaphragm 51 on the one surface side of the substrate 2 is performed.
  • the first silicon oxide film 21 is formed on the one surface side of the substrate 2 by the thermal oxidation method, the CVD method or the like, and the second silicon oxide film 22 is formed on the other surface side.
  • the first silicon oxide film 21 is patterned using photolithography technology and etching technology.
  • the substrate 2 is isotropically etched from the one surface side to form a plurality of depressions 23.
  • the first silicon oxide film 21 and the second silicon oxide film 22 are removed by etching, and then the second step of forming the thin film portion 5 on the one surface side of the substrate 2 is performed. , The structure shown in FIG. 6C is obtained.
  • a CVD method or the like can be employed as a method of forming the thin film portion 5.
  • the third step of forming the heating element layer 3 on the thin film portion 5 is performed.
  • a method of forming the heat generating body layer 3 a sputtering method, a vapor deposition method, a CVD method or the like can be adopted.
  • each pad 7 After the third step, after each pad 7 is formed (see FIG. 6D), a plurality of recessed portions 53 are provided by etching the formation planned region of the opening 2a in the substrate 2 from the other surface side of the substrate 2
  • the fourth step of forming the diaphragm portion 51 By performing the fourth step of forming the diaphragm portion 51, the infrared radiation element 1 having the structure shown in FIG. 6E is obtained.
  • a thin film formation technique such as a sputtering method, an evaporation method, a CVD method, etc., and a photolithography technique and an etching technique can be used.
  • a mask material layer formed of a laminated film (not shown) of a silicon oxide film and a silicon nitride film is formed on the other surface side of the substrate 2 by the CVD method or the like. Thereafter, the mask material layer is patterned using photolithography technology and etching technology to form a mask layer, and then the substrate 2 is etched from the other surface side to form the opening 2a.
  • the opening 2a of the substrate 2 may be formed by anisotropic etching using an alkaline solution as an etching solution.
  • the thin film portion 5 can be used as an etching stopper layer at the time of forming the opening portion 2 a, so that the thickness accuracy of the thin film portion 5 can be enhanced. It is possible to prevent a part or residue of the substrate 2 from remaining on the side of the opening 2a.
  • the thin film portion 5 by using the thin film portion 5 as an etching stopper layer when forming the opening portion 2 a, it becomes possible to increase the accuracy of the thickness of the thin film portion 5. It is possible to suppress the dispersion of the mechanical strength of the thin film portion 5 and the dispersion of the heat capacity of the diaphragm portion 51.
  • the diaphragm portion 51 is provided with a plurality of recessed portions 53 which are recessed toward the opening 2 a side, and the inner surface 53 a of each recessed portion 53 is a concave surface.
  • the heating element layer 3 is formed along the inner surface 53 a of each recess 53.
  • the directivity can be improved by the heating element layer 3 being formed along the inner surface 53 a of each recess 53.
  • the concave surface which comprises each inner surface 53a of each recessed part 53 is rotation quadric surface shape.
  • FIG. 7 is an operation explanatory view of the infrared radiation element 1, schematically showing the radiation direction of infrared radiation emitted from the heating element layer 3 when energized between the pair of pads 7 and 7 by a solid line with an arrow. is there. Further, FIG. 7 schematically shows a desired irradiation unit 10 to which the infrared radiation emitted from the infrared radiation element 1 is emitted.
  • the irradiation unit 10 is, for example, a light receiving element that receives infrared light.
  • the surface of each portion of the heating element layer 3 which is stacked in each of the concave portions 53 of the diaphragm portion 51 has a concave curved surface.
  • the infrared radiation element 1 emits radiation as shown in FIG. 7 as compared to the non-directional one in which the infrared radiation is isotropically emitted like the infrared radiation element 1 ′ of the comparative example shown in FIG.
  • the size of the irradiation unit 10 is the same. It becomes possible to improve the irradiation efficiency to the irradiation part 10, and it becomes possible to reduce the loss of the emitted infrared rays.
  • the irradiation unit 10 is a light receiving element, it is possible to improve the light receiving efficiency of the light receiving element.
  • the infrared radiation element 1 of the present embodiment is a laminated including the diaphragm portion 51 as compared with the infrared light source 100 having the condensing lens 130 as in the conventional example shown in FIGS. 8A and 8B while improving the directivity. It is possible to reduce the heat capacity of the entire structure. Therefore, since the infrared radiation element 1 can accelerate the response of the temperature change of the heat generating body layer 3 to the voltage waveform applied between the pair of pads 7, the temperature of the heat generating body layer 3 tends to rise. It is possible to achieve high output and high response speed.
  • directivity can be improved by including the above-described first step, second step, third step and fourth step. It is possible to provide an infrared radiation element 1 which is capable of achieving high output.
  • the infrared radiation element 1 of each embodiment is not limited to an infrared source for a gas sensor, and may be used, for example, for an infrared source for flame detection, an infrared source for infrared light communication, an infrared source for spectral analysis, etc. Is possible.

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
PCT/JP2013/001051 2012-03-30 2013-02-25 赤外線放射素子およびその製造方法 WO2013145540A1 (ja)

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JP6113254B1 (ja) 2015-11-26 2017-04-12 三菱電機株式会社 赤外線光源
TWI676277B (zh) * 2018-09-07 2019-11-01 神匠創意股份有限公司 光激發式微型熱紅外線放射裝置

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JP2006071601A (ja) * 2004-09-06 2006-03-16 Denso Corp 赤外線センサ、赤外線式ガス検出器、及び赤外線光源
JP2009210290A (ja) * 2008-02-29 2009-09-17 Panasonic Electric Works Co Ltd 赤外線放射素子
JP2013003020A (ja) * 2011-06-17 2013-01-07 Tdk Corp マイクロヒータ素子

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KR100332742B1 (ko) * 1994-10-26 2002-11-23 엘지전자주식회사 가스센서의제조방법
JP3867393B2 (ja) * 1998-03-20 2007-01-10 株式会社デンソー マイクロヒータおよびその製造方法ならびにエアフローセンサ
CN1203295C (zh) * 1999-03-24 2005-05-25 石塚电子株式会社 热堆式红外线传感器及其制造方法
JP5243817B2 (ja) * 2008-02-29 2013-07-24 パナソニック株式会社 赤外線放射素子
JP5645240B2 (ja) * 2009-03-31 2014-12-24 パナソニックＩｐマネジメント株式会社 赤外線アレイセンサ
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US4378489A (en) * 1981-05-18 1983-03-29 Honeywell Inc. Miniature thin film infrared calibration source
JP2006071601A (ja) * 2004-09-06 2006-03-16 Denso Corp 赤外線センサ、赤外線式ガス検出器、及び赤外線光源
JP2009210290A (ja) * 2008-02-29 2009-09-17 Panasonic Electric Works Co Ltd 赤外線放射素子
JP2013003020A (ja) * 2011-06-17 2013-01-07 Tdk Corp マイクロヒータ素子

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