WO2013140654A1 - Module à semi-conducteurs - Google Patents

Module à semi-conducteurs Download PDF

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Publication number
WO2013140654A1
WO2013140654A1 PCT/JP2012/077940 JP2012077940W WO2013140654A1 WO 2013140654 A1 WO2013140654 A1 WO 2013140654A1 JP 2012077940 W JP2012077940 W JP 2012077940W WO 2013140654 A1 WO2013140654 A1 WO 2013140654A1
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WIPO (PCT)
Prior art keywords
silicon carbide
semiconductor module
underlayer
carbide device
electrode
Prior art date
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PCT/JP2012/077940
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English (en)
Japanese (ja)
Inventor
義幸 中木
井高　志織
中田　修平
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三菱電機株式会社
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Publication of WO2013140654A1 publication Critical patent/WO2013140654A1/fr

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Definitions

  • the present invention relates to a semiconductor module, and more particularly to an element structure of a semiconductor module provided with a silicon carbide device.
  • the silicon carbide semiconductor device of Patent Document 1 is provided with a conductor layer on the side surface of the silicon carbide chip.
  • the power semiconductor device of Patent Document 2 includes an electrolytic relaxation region having an active region, a guard ring and a channel stopper on the outer periphery thereof, and an aluminum electrode in contact with the channel stopper.
  • metallization is performed in an area close to the dicing end, thereby improving the breakdown voltage of the semiconductor device.
  • silicon carbide has a low adhesion strength between the mold resin and the chip end surface because it is difficult to form a natural oxide film.
  • An object of the present application is to improve the bonding strength between a mold resin and a silicon carbide device in a silicon carbide device sealed with a mold resin.
  • a semiconductor module includes a metal base plate, a silicon carbide device in which a first electrode is formed on the back surface, a second electrode is formed on the surface, and the base plate is joined to the first electrode, and silicon carbide
  • An insulating film that is formed directly on the surface of the device and surrounds the periphery of the second electrode; a base layer that is formed directly on the surface of the silicon carbide device and surrounds the periphery of the insulating film; and the silicon carbide device, the insulating film, and the base layer are sealed
  • a mold resin, and the mold resin directly covers the side surface of the silicon carbide device.
  • the bonding strength between the silicon carbide device and the mold resin can be improved, and the mechanical reliability of the silicon carbide power module is improved.
  • FIG. 1 is an overall view of a semiconductor module according to the present invention. It is the top view and sectional drawing which show the silicon carbide device by Embodiment 1 of this invention. It is sectional drawing which shows the silicon carbide device wafer before isolate
  • FIG. 1 shows a cross-sectional structure of a semiconductor module according to the present application.
  • the semiconductor module 100 includes a protective layer 5, an underlayer 6, a mold resin 10, a lead electrode 11, a base plate 12, a silicon carbide device 20, and the like.
  • Anode electrode 2 and back electrode 4 are formed on the front and back surfaces of silicon carbide device 20, respectively.
  • Silicon carbide device 20 and metal base plate 12 are joined by solder 13.
  • Lead electrode 11 is connected to silicon carbide device 20 by means such as lead bonding or soldering.
  • the components above the base plate 12 are sealed with an epoxy mold resin 10.
  • the mold resin 10 for example, a polyfunctional epoxy resin or an epoxy resin having a glass transition point of 150 ° C. or higher is used.
  • FIG. 2 is a plan view (A) and a cross-sectional view (B) showing silicon carbide device 20 according to the first embodiment.
  • the cross-sectional view shown in the lower part is a cross section AB of the plan view shown in the upper part.
  • the silicon carbide device 20 shown here represents a vertical diode for passing a current in the vertical direction of the substrate, but the present invention can be similarly applied to other active devices and horizontal devices.
  • Silicon carbide device 20 is manufactured using a silicon carbide bulk substrate (wafer) containing an n-type impurity at a relatively high concentration.
  • a silicon carbide drift layer containing an n-type impurity at a relatively low concentration is formed on the silicon carbide bulk substrate.
  • the anode electrode 2 formed on the surface of the silicon carbide substrate 1 includes an anode layer 2 a and an electrode layer 3.
  • the anode layer 2a is composed of a thin film made of titanium, molybdenum, nickel or the like.
  • An electrode layer 3 made of aluminum, copper or the like is formed on the anode layer 2a as a bonding pad.
  • the back electrode 4 is composed of a metal silicide film and a metallized film.
  • a metal silicide film such as nickel silicide covers the back surface of the silicon carbide substrate 1 to form an ohmic electrode.
  • the metal silicide film is covered with a metallized film suitable for solder bonding.
  • a lead electrode 11 is connected to the electrode layer 3.
  • a protective layer 5 made of, for example, polyimide resin is formed around the electrode layer 3 in order to protect the withstand voltage structure and stabilize electrical characteristics.
  • a dielectric layer made of silicon oxide, silicon nitride or the like may be formed below the protective layer 5 made of an insulating material, if necessary.
  • a p-type impurity layer 14 is formed as a breakdown voltage structure around the anode layer 2 a disposed below the electrode layer 3.
  • the underlayer 6 is provided on the surface of the silicon carbide substrate 1 in a region extending from the periphery of the protective layer 5 to the end of the silicon carbide substrate 1.
  • a metal material such as titanium, molybdenum, nickel, aluminum, or copper, or an oxide or nitride thereof can be preferably used.
  • Noble metals are not suitable for the underlayer because it is difficult to obtain adhesion with the mold resin.
  • the thickness of the underlayer 6 is, for example, about 20 nm to 20 ⁇ m.
  • this configuration improves the bonding strength between the mold resin 10 and the silicon carbide device 20 and improves the mechanical reliability. This effect was not noticeable in silicon devices.
  • the bonding strength with respect to the mold resin is improved by several percent when a metal, or an oxide or nitride thereof is interposed rather than a simple substance of silicon carbide.
  • the surface treatment is important for the silicon carbide substrate 1 which is machined and has a mirror surface. It has been verified that the formation of the underlayer 6 does not cause an electrical failure.
  • a low-resistance silicon carbide wafer is prepared, and an n-type semiconductor or a p-type impurity layer having a breakdown voltage structure is formed on the main surface.
  • An ohmic electrode 9 made of, for example, a nickel silicide film is formed on the back surface of the wafer (see FIG. 3).
  • a titanium film having a thickness of 20 to 800 nm is formed on the surface by sputtering and patterned into a desired shape. Since the anode layer 2a and the underlayer 6 can be formed from the same film, the anode layer 2a and the underlayer 6 are formed of a titanium film by one lithography here.
  • FIG. 3 shows a cross-sectional view of the wafer 21 in which the anode layer 2a and the underlayer 6 are formed in desired shapes.
  • the base layer 6 is integrated with the base layer of the adjacent chip.
  • annealing is performed at 400 to 700 ° C., more preferably 450 to 500 ° C. in an inert gas atmosphere or in a vacuum.
  • An electrode layer 3 made of aluminum or copper having a thickness of 2 to 20 ⁇ m is formed on the surface 21 a of the wafer 21.
  • a dielectric layer made of silicon nitride is formed as necessary.
  • a polyimide resin layer having a thickness of 3 to 20 ⁇ m is formed around the electrode layer 3 by using a method such as spin coating for electrical stabilization and the like. For this reason, the tip of the protective layer 5 is bent like a bowl.
  • the wafer 21 is chipped by, for example, blade dicing or laser dicing. Since the underlayer 6 is formed over adjacent chips, the underlayer 6 is formed up to the end of the completed chip.
  • the underlayer 6 made of a thin film does not affect the quality of blade dicing. For example, since there is no increase in the chipping amount at the tip end, it can be produced under normal silicon carbide processing conditions.
  • the basic production method is the same for active devices.
  • a necessary impurity layer is formed.
  • the drive electrode, the interlayer dielectric, the ohmic electrode, etc. the surface electrode is formed.
  • the underlayer 6 can be formed alone, or a titanium layer, a tantalum layer, a nitride layer thereof, or the like disposed below the electrode layer 3 can be used.
  • the semiconductor module 100 is completed by joining the base plate 12 and the lead electrode 11 to the silicon carbide device 20 and then encapsulating it in, for example, an epoxy resin mold material and performing final processing.
  • an epoxy resin mold material for example, an epoxy resin mold material
  • various metal films and their oxides and nitrides can improve the bonding strength with the molding material with respect to silicon carbide. Therefore, the configuration of the semiconductor module does not depend on the molding process.
  • the bonding strength between the mold resin and the silicon carbide device can be improved, and the mechanical reliability can be improved.
  • the formation of the underlayer 6 does not require a special process increase and an improvement in process conditions, and therefore does not cause an increase in cost.
  • FIG. FIG. 4 is a plan view (A) and a sectional view (B) showing silicon carbide device 20 according to the second embodiment.
  • a cross section AB in the plan view shown in the upper part is shown in a lower cross sectional view.
  • Tapered portion 50 is formed at the outer peripheral end on the front side of the silicon carbide device.
  • Underlayer 6 is disposed on the surface of silicon carbide substrate 1 up to the end of the chip.
  • the silicon carbide device wafer is the same as in the first embodiment, and the taper portion 50 is formed when separating into chips. After the tip is tapered with a grindstone having a shape corresponding to a tapered shape, dicing is performed to complete the silicon carbide device.
  • the base layer 6 is arranged up to the chip end of the silicon carbide substrate that has not been machined, the chip end can be increased in adhesive strength and stress is increased as in the first embodiment. Since the stress can be distributed at the portion, further mechanical reliability can be improved.
  • FIG. 5 is a plan view (A) and a cross-sectional view (B) showing silicon carbide device 20 according to the third embodiment.
  • a cross section AB in the plan view shown in the upper part is shown in a lower cross sectional view.
  • the surface exposure of silicon carbide substrate 1 was completely avoided.
  • it is important that the silicon carbide device has the base layer 6 at the chip end. Covering half of the uncovered portion of the anode layer 2a with the outer peripheral portion of the silicon carbide substrate also improves the mechanical characteristics as compared with the semiconductor module in which the base layer 6 is not disposed.
  • the underlayer 6 is continuously formed over the entire chip end, there is no significant reduction in the effect even if it is divided. Further, the underlayer 6 is not limited to a single material, and may be formed of, for example, a plurality of layers of the electrode layer 3 and the underlayer 6.
  • FIG. 6 is a cross-sectional view showing a configuration of silicon carbide device 20 according to the fourth embodiment.
  • a recess 7 is formed in the underlayer 6.
  • the recess 7 may have a shape that circulates around the tip end, or may be a discrete dot.
  • the recess 7 is formed in the silicon carbide substrate 1 before the foundation layer 6 is formed. Since the trench structure may be necessary for the device structure, the depression 7 is easy to form at the time of manufacturing the trench. It is also conceivable to form irregularities 8 on the protective layer 5.
  • the unevenness 8 can be easily formed by a method of forming the protective layer 5 made of polyimide twice. According to the fourth embodiment, the mechanical reliability can be further improved by improving the bonding strength with the increase in the bonding area.
  • FIG. FIG. 7 is a plan view (A) and a cross-sectional view (B) showing silicon carbide device 20 according to the fifth embodiment.
  • a cross section AB in the plan view shown in the upper part is shown in a lower cross sectional view.
  • the underlayer 6 is composed of two types of layers (underlayer 6a and metal underlayer 6b).
  • the underlayer 6a is formed over the entire circumference as in the previous embodiments.
  • Metal base layer 6 b formed of metal on base layer 6 a is bent halfway and is formed at a corner portion of silicon carbide substrate 1.
  • the corner portion of the metal underlayer 6b is preferably rounded, i.e., has a positive radius of curvature, rather than a right angle.
  • the effect of the underlayer 6a can be expected to be the same as that of the underlayer 6 in the first to fourth embodiments.
  • Metal foundation layer 6b formed in the corner portion of the silicon carbide device disperses stress concentration in the corner portion.
  • the underlayer 6a is preferably composed of, for example, a titanium film formed simultaneously with the anode layer 2a.
  • the metal underlayer 6b is preferably composed of an aluminum film or the like produced simultaneously with the electrode layer 3. Assuming the case where chips are separated by machining, the underlayer 6a needs to be made of a material mainly composed of a thin metal, but the metal underlayer 6b is made of a material different from that of the underlayer 6a, If it is arranged outside the processing region, it is possible to apply a thick film electrode material.
  • the base layer 6 can be partly separated and provided with a cutout portion 30 (see FIG. 3 for comparison).
  • the notched portion 30 is formed when the wafer process is completed and separated into chips by machining.
  • FIG. 9 is a plan view (A) and a cross-sectional view (B) showing silicon carbide device 20 according to the sixth embodiment.
  • a cross section AB in the plan view shown in the upper part is shown in a lower cross sectional view.
  • the underlayer 6 is formed over the entire periphery of the chip, but is divided in the middle, and a removal region 6c is formed in the central portion of the chip piece.
  • An advantage of removing the center portion of the chip piece is that the machining load can be reduced when the silicon carbide substrate is diced into chips by machining (cutting).
  • the mold resin 10 and the silicon carbide device 20 are in close contact over the entire region.
  • the mold resin and the chip are separated from the corner portion of the chip, it is worthwhile to stop the progress of the separation that exceeds at least the width of the protective layer 5.
  • the base layer 6 is formed at the corner portion of the chip, but a removal area 6 c of, for example, several millimeters or more is provided at the center of each side of the chip.
  • FIG. 10 is a plan view (A) and a cross-sectional view (B) showing silicon carbide device 20 according to the seventh embodiment.
  • a cross section AB in the plan view shown in the upper part is shown in a lower cross sectional view.
  • a shape example in the case where two layers of the underlayer 6 are arranged is shown. This structure can also increase the adhesive strength as in the first embodiment. When the chips are separated by cutting, the cost can be reduced by reducing the load by cutting.
  • FIG. 11 shows the result of evaluating a test piece (wafer) that has not been separated into chips by a shear test.
  • a pattern corresponding to the protective layer 5 and the underlayer 6 was formed on a silicon carbide substrate serving as a test piece, and then an isolated resin in the shape of a wafer was molded.
  • a certain strength force was applied from the side of the resin to evaluate the adhesive strength.
  • the test piece “covering the entire surface” has no region where the silicon carbide substrate is exposed under the resin.
  • the “half-covered” test piece has a structure in which the silicon carbide substrate is exposed with a width of approximately 20 microns between the base layer and the protective layer at the resin end of the side where the shear force is applied. Yes.
  • a force less than the cohesive fracture strength of the resin was applied to the test piece for 240 hours.
  • a sufficient adhesion strength between the resin and the substrate was obtained through the base layer by providing the base layer.
  • half covered a small number of test pieces showed some separation in the substrate portion rather than the underlayer. In this case, it seems that the test was more severe than the actual module due to stress concentration in the isolated resin. It can be seen that it is useful to provide a base layer where stress is present.
  • FIG. 12 shows the result of evaluating the effect of the rectangular base layer according to the fifth to seventh embodiments.
  • a shear test was performed on a test piece (wafer) in which a metal layer having an aluminum outermost surface was formed in a rectangular shape on a silicon carbide substrate, and a mold resin was formed on and around the metal layer.
  • the radius of curvature of the rectangular metal layer at the corner of the test piece was 0 to 50 microns.
  • the shear test was performed so that the shear force was applied to the arc corner portion of the metal layer. Even when the corner portion is set at a right angle (radius 0 micron), some of the corner portions have sufficient strength, but separation occurred at the corner portion in a test piece of about several percent.
  • the radius of the corner portion was 5 microns, separation occurred at the corner portion with a very small number of test pieces.
  • the corner radius was 10 to 50 microns, cohesive failure occurred in the resin.
  • the stress concentration is dispersed by forming an arc shape in the rectangular metal layer. From these effects, it can be seen that the underlying layer 6a can be omitted. Maximum stress is generated at the corners of the chip. Assuming that the chip and the resin are separated from each other at the end of the chip without reinforcing the adhesion of the corner portion, a large stress is always generated at the end of the base layer 6a. From the viewpoint of improving reliability, it is more desirable to form a two-layer underlayer. Similar to the first embodiment, the mechanical strength can be further improved by applying the structure that can increase the adhesive strength and reduce the applied stress.
  • the semiconductor module 100 uses a silicon carbide device, the semiconductor module 100 is operated at a higher temperature than in the case of silicon in order to take advantage of its characteristics.
  • the semiconductor module on which a silicon carbide device is mounted since higher reliability is required as a semiconductor module, the merit of the present invention to realize a highly reliable semiconductor module becomes more effective.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

La présente invention a pour objet d'améliorer le pouvoir adhésif entre une résine de moulage et un dispositif au carbure de silicium, scellé par la résine de moulage. L'invention concerne un module à semi-conducteurs qui comprend : une plaque de base formée d'un métal ; un dispositif au carbure de silicium, qui présente une surface arrière, dotée d'une première électrode et une surface avant, dotée d'une seconde électrode, la première électrode étant liée à la plaque de base ; un film isolant, formé directement sur la surface avant du dispositif au carbure de silicium, de manière à entourer la seconde électrode ; une couche de base, formée directement sur la surface avant du dispositif au carbure de silicium, de manière à entourer le film isolant ; et une résine de moulage qui scelle le dispositif au carbure de silicium , le film isolant et la couche de base. La résine de moulage recouvre directement la surface latérale du dispositif au carbure de silicium.
PCT/JP2012/077940 2012-03-19 2012-10-30 Module à semi-conducteurs WO2013140654A1 (fr)

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JP2012061501A JP2015109292A (ja) 2012-03-19 2012-03-19 半導体モジュール

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EP3159933A4 (fr) * 2015-08-27 2017-08-09 Shindengen Electric Manufacturing Co., Ltd. Dispositif à semi-conducteur à largeur de bande interdite étendue et procédé de fabrication d'un dispositif à semi-conducteur à largeur de bande interdite étendue
CN113421875A (zh) * 2021-06-23 2021-09-21 华北电力大学 一种压接型高压大功率芯片结构及功率器件
EP4068390A1 (fr) * 2021-03-31 2022-10-05 Huawei Technologies Co., Ltd. Dispositif semi-conducteur de puissance

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JP6507874B2 (ja) * 2015-06-17 2019-05-08 富士電機株式会社 半導体装置および半導体装置の製造方法

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EP4068390A1 (fr) * 2021-03-31 2022-10-05 Huawei Technologies Co., Ltd. Dispositif semi-conducteur de puissance
CN113421875A (zh) * 2021-06-23 2021-09-21 华北电力大学 一种压接型高压大功率芯片结构及功率器件
CN113421875B (zh) * 2021-06-23 2024-02-20 华北电力大学 一种压接型高压大功率芯片结构及功率器件

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