WO2013136982A1 - Appareil de décollement, système de décollement et procédé de décollement - Google Patents

Appareil de décollement, système de décollement et procédé de décollement Download PDF

Info

Publication number
WO2013136982A1
WO2013136982A1 PCT/JP2013/055115 JP2013055115W WO2013136982A1 WO 2013136982 A1 WO2013136982 A1 WO 2013136982A1 JP 2013055115 W JP2013055115 W JP 2013055115W WO 2013136982 A1 WO2013136982 A1 WO 2013136982A1
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
substrate
processed
peeling
fluid
Prior art date
Application number
PCT/JP2013/055115
Other languages
English (en)
Japanese (ja)
Inventor
勝 本田
Original Assignee
東京エレクトロン株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東京エレクトロン株式会社 filed Critical 東京エレクトロン株式会社
Publication of WO2013136982A1 publication Critical patent/WO2013136982A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment

Definitions

  • the present invention relates to a peeling apparatus that peels a superposed substrate from a substrate to be processed and a support substrate, a peeling system including the peeling apparatus, and a peeling method using the peeling apparatus.
  • the diameter of a semiconductor wafer (hereinafter referred to as “wafer”) has been increased. Further, in a specific process such as mounting, it is required to make the wafer thinner.
  • the wafer may be warped or cracked.
  • the wafer is attached to a wafer or a glass substrate which is a support substrate. Then, after a predetermined process such as a wafer polishing process is performed in a state where the wafer and the support substrate are bonded in this way, the wafer and the support substrate are peeled off.
  • the wafer and the support substrate are peeled off using, for example, a peeling device.
  • the peeling apparatus includes, for example, a first holder that holds a wafer, a second holder that holds a support substrate, and a nozzle that ejects liquid between the wafer and the support substrate. And in this peeling apparatus, a wafer and a support substrate are peeled by injecting a liquid between the wafer joined from the nozzle, and a support substrate (patent document 1).
  • the wafer and the support substrate are to be peeled off only by the liquid injection, it is necessary to spray the liquid with a very large spray pressure. In such a case, the wafer or the support substrate may be damaged. In particular, since the wafer is thin, it is easily damaged.
  • the present invention has been made in view of such a point, and an object thereof is to appropriately peel off a substrate to be processed and a support substrate.
  • the present invention provides a peeling apparatus for peeling a superposed substrate having a substrate to be treated and a support substrate bonded to the substrate to be treated and the support substrate, from the side of the superposed substrate. And a cutting mechanism with a sharp tip inserted into the bonding surface of the support substrate and a fluid supply mechanism for supplying fluid from the side of the polymerization substrate to the bonding surface of the substrate to be processed and the support substrate .
  • a cutting mechanism with a sharp tip is inserted into the bonding surface between the substrate to be processed and the support substrate from the side of the superposed substrate to make a cut, and further, the bonding surface between the substrate to be processed and the support substrate
  • a fluid can be supplied from the fluid supply mechanism to peel off the substrate to be processed and the support substrate. Since the fluid is supplied from the fluid supply mechanism to the cut formed by the cutting mechanism in this way, for example, even when the supply pressure of the fluid is small, the fluid can easily enter the joint surface between the substrate to be processed and the support substrate. be able to. Therefore, according to this invention, a to-be-processed substrate and a support substrate can be peeled appropriately, without receiving a damage to a to-be-processed substrate and a support substrate.
  • a peeling system including a peeling device that peels a superposed substrate in which a substrate to be processed and a support substrate are bonded to the substrate to be processed and the supporting substrate.
  • a cutting mechanism with a sharp tip inserted into the bonding surface of the substrate to be processed and the support substrate from the side, and a fluid that supplies fluid to the bonding surface of the substrate to be processed and the support substrate from the side of the superposed substrate
  • a stripping system, the stripping system including the stripping apparatus, a loading / unloading station for loading / unloading a substrate to be processed, a support substrate, or a superposed substrate with respect to the processing station, and the processing And a transfer device for transferring a substrate to be processed, a support substrate, or a superposed substrate between the station and the carry-in / out station.
  • a peeling method for peeling a polymerization substrate in which a substrate to be processed and a support substrate are bonded to the substrate to be processed and the support substrate.
  • a cutting mechanism with a sharp tip is inserted into the bonding surface of the substrate, and a cut is made. Further, a fluid is supplied from the fluid supply mechanism to the cutting of the bonding surface of the substrate to be processed and the support substrate, and The processing substrate and the support substrate are peeled off.
  • the substrate to be processed and the support substrate can be appropriately peeled off.
  • FIG. 1 is a plan view showing an outline of a configuration of a peeling system 1 according to the present embodiment.
  • a superposed wafer T as a superposed substrate in which a target wafer W as a target substrate and a support wafer S as a support substrate are bonded with an adhesive G is used as a target wafer W. And the support wafer S is peeled off.
  • a surface bonded to the support wafer S via the adhesive G is referred to as “bonding surface W J ”, and a surface opposite to the bonding surface W J is referred to as “non-bonding surface W N ”. That's it.
  • wafer W is a wafer as a product, for example, a plurality of devices having a plurality of electronic circuits and the like on the bonding surface W J is formed. Further, for example, the non-bonded surface W N of the wafer to be processed W is polished and thinned (for example, the thickness is 50 ⁇ m to 100 ⁇ m).
  • the support wafer S is a wafer having a disk shape having the same diameter as the diameter of the wafer W to be processed and supporting the wafer W to be processed.
  • a wafer is used as the support substrate, but another substrate such as a glass substrate may be used.
  • the peeling system 1 includes cassettes C W , C S , and C T that can accommodate, for example, a plurality of wafers W to be processed, a plurality of support wafers S, and a plurality of superposed wafers T, respectively.
  • a loading / unloading station 2 for loading / unloading a processing station 3 including various processing apparatuses for performing predetermined processing on the processing target wafer W, the supporting wafer S, and the overlapped wafer T, and a post-processing station 4 adjacent to the processing station 3
  • the interface station 5 for transferring the wafer W to be processed between the two.
  • the carry-in / out station 2 and the processing station 3 are arranged side by side in the X direction (vertical direction in FIG. 1).
  • a wafer transfer area 6 is formed between the carry-in / out station 2 and the processing station 3.
  • the interface station 5 is disposed on the Y direction negative direction side (left direction side in FIG. 1) of the processing station 3.
  • An inspection apparatus 7 for inspecting the wafer W to be processed before being transferred to the post-processing station 4 is disposed on the positive side in the X direction of the interface station 5 (upward in FIG. 1). Further, the opposite side of the inspection apparatus 7 across the interface station 5, i.e. the X-direction negative side of the interface station 5 (side downward direction in FIG. 1), the bonding surface W J and wafer W after inspection
  • a post-inspection cleaning station 8 that performs cleaning of the non-bonded surface W N and inversion of the front and back surfaces of the wafer W to be processed is disposed.
  • the loading / unloading station 2 is provided with a cassette mounting table 10.
  • the cassette mounting table 10 is provided with a plurality of, for example, three cassette mounting plates 11.
  • the cassette mounting plates 11 are arranged in a line in the Y direction (left and right direction in FIG. 1).
  • the cassettes C W , C S , and C T can be placed on these cassette mounting plates 11 when the cassettes C W , C S , and C T are carried into and out of the peeling system 1. .
  • the carry-in / out station 2 is configured to be capable of holding a plurality of wafers W to be processed, a plurality of support wafers S, and a plurality of superposed wafers T.
  • the number of cassette mounting plates 11 is not limited to the present embodiment, and can be arbitrarily determined. Further, the plurality of superposed wafers T carried into the carry-in / out station 2 are inspected in advance, and a superposed wafer T including a normal target wafer W and a superposed wafer T including a defective target wafer W are obtained. And have been determined.
  • the cassette mounting table 10 is provided with a position adjusting device 12 for adjusting the horizontal direction of the superposed wafer T.
  • the position adjusting device 12 also functions as a buffer by accommodating a plurality of superposed wafers T.
  • the first transfer device 20 is disposed in the wafer transfer region 6.
  • the first transfer device 20 includes a transfer arm that can move around, for example, a vertical direction, a horizontal direction (Y direction, X direction), and a vertical axis.
  • the first transfer device 20 moves in the wafer transfer region 6 and can transfer the processing target wafer W, the support wafer S, and the overlapped wafer T between the transfer-in / out station 2 and the processing station 3.
  • the processing station 3 includes a peeling device 30 that peels the overlapped wafer T from the wafer W to be processed and the support wafer S.
  • a first cleaning device 31 that cleans the wafer to be processed W that has been peeled off is disposed on the negative side in the Y direction of the peeling device 30 (left side in FIG. 1).
  • a second transfer device 32 is provided between the peeling device 30 and the first cleaning device 31.
  • a second cleaning device 33 for cleaning the peeled support wafer S is arranged on the positive side in the Y direction of the peeling device 30 (right side in FIG. 1).
  • the first cleaning device 31, the second transfer device 32, the peeling device 30, and the second cleaning device 33 are arranged in this order from the interface station 5 side.
  • the inspection apparatus 7 the presence or absence of the residue of the adhesive G on the processing target wafer W peeled by the peeling apparatus 30 is inspected.
  • the wafer W to be processed in which the residue of the adhesive G is confirmed by the inspection device 7 is cleaned.
  • the inspection after cleaning station 8, the bonding surface cleaning device 40 for cleaning the joint surface W J of wafer W, the non-bonding surface cleaning apparatus 41 for cleaning the non-bonding surface W N of the wafer W, the wafer W Has a reversing device 42 for vertically reversing the front and back surfaces.
  • the bonding surface cleaning device 40, the reversing device 42, and the non-bonding surface cleaning device 41 are arranged side by side in the Y direction from the post-processing station 4 side.
  • the interface station 5 is provided with a third transport device 51 that is movable on a transport path 50 extending in the Y direction.
  • the third transfer device 51 is also movable in the vertical direction and around the vertical axis ( ⁇ direction), and the wafer to be processed between the processing station 3, the post-processing station 4, the inspection device 7, and the post-inspection cleaning station 8. W can be conveyed.
  • predetermined post-processing is performed on the wafer W to be processed peeled off in the processing station 3.
  • predetermined post-processing for example, processing for mounting the processing target wafer W, processing for inspecting electrical characteristics of devices on the processing target wafer W, processing for dicing the processing target wafer W for each chip, and the like are performed.
  • the peeling device 30 includes a processing container 100 that can seal the inside.
  • a loading / unloading port (not shown) for the processing target wafer W, the support wafer S, and the overlapped wafer T is formed on the side surface of the processing container 100, and an opening / closing shutter (not shown) is provided at the loading / unloading port.
  • a first holding unit 110 that holds the wafer W to be processed by suction on the lower surface and a second holding unit 111 that holds the supporting wafer S on the upper surface by suction are provided.
  • the first holding unit 110 is provided above the second holding unit 111 and is disposed so as to face the second holding unit 111. That is, in the inside of the processing container 100, the peeling process is performed on the superposed wafer T in a state where the processing target wafer W is arranged on the upper side and the supporting wafer S is arranged on the lower side.
  • a porous chuck is used for the first holding unit 110.
  • the first holding part 110 has a plate-like main body part 120.
  • a porous 121 that is a porous body is provided on the lower surface side of the main body 120.
  • Porous 121 has, for example, substantially the same diameter as the processed wafer W, and contact with the non-bonding surface W N of the treated wafer W.
  • silicon carbide is used as the porous 121.
  • a suction space 122 is formed inside the main body 120 and above the porous 121.
  • the suction space 122 is formed so as to cover the porous 121, for example.
  • a suction pipe (not shown) communicating with a negative pressure generator (not shown) such as a vacuum pump is connected to the suction space 122. Then, the non-joint surface W N of the wafer to be processed is sucked from the suction pipe via the suction space 122 and the porous 121, and the wafer to be processed W is sucked and held by the first holding unit 110.
  • a rotation mechanism 130 that rotates the first holding unit 110 is provided on the upper surface of the first holding unit 110.
  • the rotation mechanism 130 includes a support plate 131 that supports the upper surface of the first holding unit 110, a shaft 132 provided on the upper surface of the support plate 131, and the first holding unit 110 via the support plate 131 and the shaft 132.
  • a drive unit 133 for rotating includes a motor that rotates the shaft 132 and is supported in contact with, for example, the ceiling surface of the processing container 100.
  • a spin chuck is used for the second holding unit 111.
  • the second holding unit 111 has a horizontal upper surface, and a suction port (not shown) for sucking, for example, the support wafer S is provided on the upper surface.
  • the support wafer S can be sucked and held on the second holding unit 111 by suction from the suction port.
  • a driving part 140 provided with a motor or the like is provided below the second holding part 111.
  • the drive unit 140 is provided with an elevating drive source such as a cylinder, for example, and the second holding unit 111 is movable up and down.
  • the second holding unit 111 and the driving unit 140 are supported by the support plate 141.
  • an elevating mechanism 142 having an elevating drive source such as a cylinder, for example, and the support plate 141 can be raised and lowered.
  • a guide member 150 that adjusts the horizontal position of the support wafer S is provided.
  • the guide member 150 includes a guide portion 151 that guides the outer peripheral side surface of the support wafer S, and a tapered portion 152 that extends upward from the guide portion 151 and has an inner surface that tapers upward from the lower side to the upper side. And have.
  • the guide member 150 is provided in three places in the outer peripheral part of the support wafer S, for example.
  • Each guide member 150 is supported by a support member 153 that extends vertically downward from the ceiling surface of the processing container 100 and bends in the horizontal direction at the lower end thereof.
  • a peeling mechanism 160 that peels the overlapped wafer T from the wafer W to be processed and the support wafer S is provided inside the processing container 100.
  • the peeling mechanism 160 is supported on the support plate 141 by a support member (not shown).
  • the peeling mechanism 160 is configured to be movable up and down by the lifting mechanism 142.
  • the peeling mechanism 160 may be supported by the processing container 100 or the first holding unit 110. In such a case, the peeling mechanism 160 may incorporate a lifting mechanism for raising and lowering the peeling mechanism 160.
  • the peeling mechanism 160 is inserted from the side of the overlapped wafer T into the bonding surface of the wafer W to be processed and the support wafer S to make a cut, and from the side of the overlapped wafer T.
  • a fluid supply mechanism 162 that supplies a fluid, for example, a gas, to the bonding surface between the processing target wafer W and the support wafer S is provided.
  • a blade with a sharp tip 161a is used as shown in FIG.
  • the cutting mechanism 161 may be referred to as a blade 161.
  • the fluid supply mechanism 162 has an air nozzle 163 as a fluid nozzle for supplying a gas as a fluid as shown in FIG.
  • the tip of the air nozzle 163 is sharpened as shown in FIG. 6, and a supply port 164 for supplying gas is formed at the tip.
  • a supply pipe 165 that supplies gas to the air nozzle 163 is connected to the air nozzle 163.
  • the supply pipe 165 communicates with a gas supply source 166 that stores gas therein.
  • the supply pipe 165 is provided with a supply device group 167 including a valve for controlling a gas flow, a flow rate adjusting unit, and the like.
  • gas inert gas, such as dry air and nitrogen gas, is used, for example.
  • the blade 161 and the air nozzle 163 are integrally formed by being supported by a support member 168.
  • a pair of blades 161 are provided on both sides of the air nozzle 163.
  • the pair of blades 161 and the air nozzle 163 are arranged along the outer peripheral side surface of the overlapped wafer T.
  • the support member 168 is supported by a drive unit 170 including a motor, for example.
  • a rail 171 extending in the horizontal direction (X direction in FIG. 4) is provided on the drive unit 170, and the support member 168 is attached to the rail 171.
  • the support member 168 is configured to be movable along the rail 171. That is, the blade 161 and the air nozzle 163 are configured to be movable forward and backward with respect to the overlapped wafer T.
  • the first cleaning device 31 has a processing container 180 that can be sealed inside.
  • a loading / unloading port (not shown) for the processing target wafer W is formed on the side surface of the processing container 180, and an opening / closing shutter (not shown) is provided at the loading / unloading port.
  • a porous chuck 190 that holds and rotates the wafer W to be processed is provided at the center of the processing container 180.
  • the porous chuck 190 includes a plate-shaped main body 191 and a porous 192 that is a porous body provided on the upper surface side of the main body 191.
  • the porous 192 has, for example, substantially the same diameter as the wafer to be processed W, and is in contact with the non-joint surface W N of the wafer to be processed W.
  • the porous 192 for example, silicon carbide is used.
  • a suction pipe (not shown) is connected to the porous 192, and the non-bonded surface W N of the wafer to be processed W is sucked from the suction pipe through the porous 192, so that the wafer to be processed W is placed on the porous chuck 190. Can be adsorbed and retained.
  • a chuck driving unit 193 provided with a motor or the like is provided below the porous chuck 190.
  • the porous chuck 190 can be rotated at a predetermined speed by the chuck driving unit 193.
  • the chuck driving unit 193 is provided with an elevating drive source such as a cylinder, for example, and the porous chuck 190 is movable up and down.
  • a cup 194 that receives and collects the liquid scattered or dropped from the wafer W to be processed.
  • a discharge pipe 195 for discharging the collected liquid
  • an exhaust pipe 196 for evacuating and exhausting the atmosphere in the cup 194.
  • a rail 200 extending along the Y direction is formed on the negative side of the cup 194 in the X direction (downward direction in FIG. 8).
  • the rail 200 is formed from the outside of the cup 194 on the Y direction negative direction (left direction in FIG. 8) side to the outside of the Y direction positive direction (right direction in FIG. 8) side.
  • An arm 201 is attached to the rail 200.
  • the arm 201 supports a cleaning liquid nozzle 202 that supplies a cleaning liquid, for example, an organic solvent that is a solvent for the adhesive G, to the wafer W to be processed.
  • the arm 201 is movable on the rail 200 by a nozzle driving unit 203 shown in FIG.
  • the cleaning liquid nozzle 202 can move from the standby unit 204 installed on the outer side of the cup 194 on the positive side in the Y direction to above the center of the wafer W to be processed in the cup 194, and further on the wafer W to be processed. Can be moved in the radial direction of the wafer W to be processed.
  • the arm 201 can be moved up and down by a nozzle driving unit 203 and the height of the cleaning liquid nozzle 202 can be adjusted.
  • a two-fluid nozzle is used as the cleaning liquid nozzle 202.
  • a supply pipe 210 that supplies the cleaning liquid to the cleaning liquid nozzle 202 is connected to the cleaning liquid nozzle 202.
  • the supply pipe 210 communicates with a cleaning liquid supply source 211 that stores the cleaning liquid therein.
  • the supply pipe 210 is provided with a supply device group 212 including a valve for controlling the flow of the cleaning liquid, a flow rate adjusting unit, and the like.
  • the cleaning liquid nozzle 202 is connected to a supply pipe 213 that supplies an inert gas such as nitrogen gas to the cleaning liquid nozzle 202.
  • the supply pipe 213 communicates with a gas supply source 214 that stores an inert gas therein.
  • the supply pipe 213 is provided with a supply device group 215 including a valve for controlling the flow of the inert gas, a flow rate adjusting unit, and the like. Then, the cleaning liquid and the inert gas are mixed in the cleaning liquid nozzle 202 and supplied from the cleaning liquid nozzle 202 to the wafer W to be processed.
  • a mixture of a cleaning liquid and an inert gas may be simply referred to as “cleaning liquid”.
  • lifting pins may be provided below the porous chuck 190 for supporting the wafer W to be processed from below and lifting it.
  • the elevating pins can pass through a through hole (not shown) formed in the porous chuck 190 and protrude from the upper surface of the porous chuck 190. Then, instead of raising and lowering the porous chuck 190, the raising and lowering pins are raised and lowered, and the wafer W to be processed is transferred to and from the porous chuck 190.
  • the configurations of the bonded surface cleaning device 40 and the non-bonded surface cleaning device 41 of the post-inspection cleaning station 8 are the same as the configuration of the first cleaning device 31 described above, and thus the description thereof is omitted.
  • the configuration of the second cleaning device 33 is substantially the same as the configuration of the first cleaning device 31 described above.
  • the second cleaning device 33 is provided with a spin chuck 220 instead of the porous chuck 190 of the first cleaning device 31.
  • the spin chuck 220 has a horizontal upper surface, and a suction port (not shown) for sucking, for example, the support wafer S is provided on the upper surface.
  • the support wafer S can be sucked and held on the spin chuck 220 by suction from the suction port. Since the other structure of the 2nd washing
  • cleaning apparatus 33 is the same as that of the structure of the 1st washing
  • the second cleaning device 33 below the spin chuck 220, it has a back rinse nozzle for injecting a cleaning liquid toward a back surface of the processing the wafer W, i.e. the non-bonding surface W N (not shown) is provided May be.
  • the non-bonded surface W N of the wafer to be processed W and the outer peripheral portion of the wafer to be processed W are cleaned by the cleaning liquid sprayed from the back rinse nozzle.
  • the second transfer device 32 has a Bernoulli chuck 230 that holds the wafer W to be processed as shown in FIG. Bernoulli chuck 230 is supported by support arm 231.
  • the support arm 231 is supported by the first drive unit 232.
  • the first drive unit 232 allows the support arm 231 to rotate around the horizontal axis and extend and contract in the horizontal direction.
  • a second driving unit 233 is provided below the first driving unit 232. By the second drive unit 233, the first drive unit 232 can rotate around the vertical axis and can move up and down in the vertical direction.
  • the 3rd conveying apparatus 51 has the structure similar to the 2nd conveying apparatus 32 mentioned above, description is abbreviate
  • the second drive unit 233 of the third transport device 51 is attached to the transport path 50 shown in FIG. 1, and the third transport device 51 is movable on the transport path 50.
  • the reversing device 42 includes a processing container 240 that houses a plurality of devices.
  • a loading / unloading port (not shown) for loading / unloading the wafer W to be processed by the third transfer device 51 is formed on the side surface of the processing container 240, and an opening / closing shutter (not shown) is provided at the loading / unloading port (not shown). (Not shown) is provided.
  • An exhaust port 250 for exhausting the atmosphere inside the processing container 240 is formed on the bottom surface of the processing container 240.
  • An exhaust pipe 252 communicating with an exhaust device 251 such as a vacuum pump is connected to the exhaust port 250.
  • a first holding unit 260 that holds the wafer W to be processed on the lower surface and a second holding unit 261 that holds the wafer W to be processed on the upper surface are provided.
  • the first holding unit 260 is provided above the second holding unit 261 and is disposed to face the second holding unit 261.
  • the first holding unit 260 and the second holding unit 261 have substantially the same diameter as the wafer W to be processed.
  • Bernoulli chucks are used for the first holding unit 260 and the second holding unit 261.
  • maintenance part 261 can hold
  • a support plate 262 for supporting the first holding unit 260 is provided on the upper surface of the first holding unit 260. Note that the support plate 262 of the present embodiment may be omitted, and the first holding unit 260 may be supported in contact with the ceiling surface of the processing container 240.
  • a moving mechanism 270 for moving the second holding portion 261 in the vertical direction is provided below the second holding portion 261.
  • the moving mechanism 270 drives the support plate 271 that supports the lower surface of the second holding unit 261, and moves the support plate 271 up and down so that the first holding unit 260 and the second holding unit 261 approach and separate in the vertical direction.
  • the driving unit 272 is supported by a support body 273 provided on the bottom surface of the processing container 240.
  • a support member 274 that supports the support plate 271 is provided on the upper surface of the support body 273.
  • the support member 274 is configured to be extendable and contractible in the vertical direction, and can freely expand and contract when the support plate 271 is moved up and down by the drive unit 272.
  • the inspection apparatus 7 has a processing container 280 as shown in FIGS.
  • a loading / unloading port (not shown) for the wafer W to be processed is formed on the side surface of the processing container 280, and an opening / closing shutter (not shown) is provided at the loading / unloading port.
  • a porous chuck 290 that holds the processing target wafer W is provided.
  • the porous chuck 290 includes a plate-shaped main body 291 and a porous 292 that is a porous body provided on the upper surface side of the main body 291.
  • the porous 292 has, for example, substantially the same diameter as the wafer to be processed W, and is in contact with the non-joint surface W N of the wafer to be processed W.
  • the porous 292 for example, silicon carbide is used.
  • a suction pipe (not shown) is connected to the porous 292, and the non-bonding surface W N of the wafer to be processed W is sucked from the suction pipe through the porous 292, so that the wafer to be processed W is placed on the porous chuck 290. Can be adsorbed and retained.
  • a chuck driving unit 293 is provided below the porous chuck 290.
  • the porous chuck 290 is rotatable.
  • the chuck driving unit 293 is provided on the bottom surface in the processing container 280 and is attached on a rail 294 extending along the Y direction.
  • the porous chuck 290 can be moved along the rail 294 by the chuck driving unit 293. That is, the porous chuck 290 is between the delivery position P1 for carrying in / out the wafer W to be processed with respect to the outside of the processing container 280 and the alignment position P2 for adjusting the position of the notch portion of the wafer W to be processed. I can move.
  • a sensor 295 that detects the position of the notch portion of the wafer W to be processed held by the porous chuck 290 is provided at the alignment position P2.
  • the position of the notch portion of the wafer W to be processed can be adjusted by rotating the porous chuck 290 by the chuck driving portion 293 while detecting the position of the notch portion by the sensor 295.
  • the imaging device 300 is provided on the side surface of the processing container 280 on the alignment position P2 side.
  • a wide-angle CCD camera is used for the imaging device 300.
  • a half mirror 301 is provided near the upper center of the processing container 280.
  • the half mirror 301 is provided at a position facing the imaging device 300 and is inclined by 45 degrees from the vertical direction.
  • An illumination device 302 that can change the illuminance is provided above the half mirror 301, and the half mirror 301 and the illumination device 302 are fixed to the upper surface of the processing container 280.
  • the imaging device 300, the half mirror 301, and the illumination device 302 are respectively provided above the processing target wafer W held by the porous chuck 290.
  • the illumination from the illumination device 302 passes through the half mirror 301 and is illuminated downward. Therefore, the reflected light of the object in this irradiation region is reflected by the half mirror 301 and taken into the imaging device 300. That is, the imaging apparatus 300 can capture an object in the irradiation area. Then, the captured image of the processing target wafer W is output to the control unit 350 described later, and the control unit 350 inspects whether or not the adhesive G remains on the processing target wafer W.
  • the control unit 350 is a computer, for example, and has a program storage unit (not shown).
  • the program storage unit stores a program for controlling processing of the processing target wafer W, the supporting wafer S, and the overlapped wafer T in the peeling system 1.
  • the program storage unit also stores a program for controlling the operation of drive systems such as the above-described various processing apparatuses and transport apparatuses to realize a peeling process described later in the peeling system 1.
  • the program is recorded on a computer-readable storage medium H such as a computer-readable hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical desk (MO), or a memory card. May have been installed in the control unit 350 from the storage medium H.
  • FIG. 14 is a flowchart showing an example of main steps of the peeling process.
  • a cassette C T accommodating a plurality of bonded wafer T, an empty cassette C W, and an empty cassette C S is placed on the predetermined cassette mounting plate 11 of the carry-out station 2.
  • Is bonded wafer T of the first transfer device 20 by the cassette C T are removed and transported to the position adjusting device 12.
  • the superposed wafer T is transported in a state where the processing target wafer W is disposed on the upper side and the support wafer S is disposed on the lower side.
  • the position adjusting device 12 adjusts the direction of the overlapped wafer T while detecting the position of the notch portion of the overlapped wafer T.
  • the overlapped wafer T is transferred to the peeling device 30 of the processing station 3 by the first transfer device 20.
  • the superposed wafer T carried into the peeling apparatus 30 is sucked and held by the first holding unit 110.
  • the peeling mechanism 160 is arranged so that the blade 161 and the air nozzle 163 of the peeling mechanism 160 are located at the bonding surface of the processing target wafer W and the support wafer S, that is, at the height of the adhesive G.
  • the support member 168 is moved to the overlapped wafer T side, and the blade 161 is applied to the adhesive G on the bonding surface between the processed wafer W and the support wafer S from the side of the overlapped wafer T. Insert (step A1 in FIG. 14). Then, a cut C enters the adhesive G.
  • gas is supplied from the air nozzle 163 to the notch C of the adhesive G as shown in FIGS. 17 and 18 (step A2 in FIG. 14).
  • the gas supplied from the air nozzle 163 diffuses in the wafer plane between the wafer W to be processed and the support wafer S as shown in FIG.
  • the adhesive G is separated into the processing target wafer W side and the supporting wafer S side.
  • the gas diffuses throughout the wafer surface as shown in FIGS. In this way, while the gas is supplied from the air nozzle 163 to the bonding surface between the processing target wafer W and the support wafer S, the processing target wafer W held by the first holding unit 110 is rotated by the rotation mechanism 130.
  • the processing target wafer W and the supporting wafer S are peeled off by the rotation of the processing target wafer W and the gas from the air nozzle 163 (step A3 in FIG. 14).
  • hatched portions in FIG. 17 and FIG. 19 indicate gas spreading in the adhesive G.
  • the wafer W to be processed thus peeled is transferred from the first holding unit 110 to the second transfer device 32.
  • the peeled support wafer S is adjusted in position in the horizontal direction by the guide member 150 and is sucked and held by the second holding unit 111. Thereafter, the support wafer S is transferred from the second holding unit 111 to the first transfer device 20.
  • the wafer W to be processed peeled off by the peeling device 30 is transferred to the first cleaning device 31 by the second transfer device 32.
  • a transfer method of the wafer W to be processed by the second transfer device 32 will be described.
  • the support arm 231 of the second transfer device 32 is extended, and the Bernoulli chuck 230 is disposed below the processing target wafer W held by the first holding unit 110. Thereafter, the Bernoulli chuck 230 is raised, and the suction of the wafer W to be processed from the suction tube (not shown) in the first holding unit 110 is stopped. Then, the processing target wafer W is delivered from the first holding unit 110 to the Bernoulli chuck 230. Thereafter, the Bernoulli chuck 230 is lowered to a predetermined position. Note that the wafer W to be processed is held in a non-contact state by the Bernoulli chuck 230. Therefore, wafer W is held without device on the bonding surface W J of wafer W suffers damage.
  • the support arm 231 of the second transport device 32 is rotated to move the Bernoulli chuck 230 above the porous chuck 190 of the first cleaning device 31, and the Bernoulli chuck 230 is reversed. Then, the processing target wafer W is directed downward. At this time, the porous chuck 190 is raised above the cup 194 and kept waiting. Thereafter, the wafer W to be processed is delivered from the Bernoulli chuck 230 to the porous chuck 190 and held by suction.
  • the porous chuck 190 When the wafer to be processed W is sucked and held on the porous chuck 190 in this way, the porous chuck 190 is lowered to a predetermined position. Subsequently, the arm 201 moves the cleaning liquid nozzle 202 of the standby unit 204 to above the center of the wafer W to be processed. Thereafter, while rotating the wafer W by the porous chuck 190, and supplies the cleaning liquid from the cleaning liquid nozzle 202 to the bonding surface W J of wafer W. Supplied cleaning liquid is diffused over the entire surface of the bonding surface W J of wafer W by the centrifugal force, the bonding surface W J of the wafer W is cleaned (step A4 in FIG. 14).
  • the plurality of superposed wafers T carried into the carry-in / out station 2 have been inspected in advance, and the superposed wafer T including the normal target wafer W and the defective target wafer W are arranged.
  • the superposed wafer T is discriminated.
  • a normal wafer W peeled from the normal superposed wafer T is inspected by the third transfer device 51 with the non-bonding surface W N facing downward after the bonding surface W J is cleaned in step A4. It is conveyed to the device 7. Note that the transfer of the wafer W to be processed by the third transfer device 51 is substantially the same as the transfer of the wafer W to be processed by the second transfer device 32 described above, and a description thereof will be omitted.
  • the processed wafer W transferred to the inspection apparatus 7 is held on the porous chuck 290 at the delivery position P1. Subsequently, the porous chuck 290 is moved to the alignment position P2 by the chuck driving unit 293. Next, the porous chuck 290 is rotated by the chuck driving unit 293 while detecting the position of the notch portion of the wafer W to be processed by the sensor 295. And the position of the notch part of the to-be-processed wafer W is adjusted, and the said to-be-processed wafer W is arrange
  • the chuck driving unit 293 moves the porous chuck 290 from the alignment position P2 to the delivery position P1. Then, when the wafer W to be processed passes under the half mirror 301, the illumination apparatus 302 illuminates the wafer W to be processed. The reflected light on wafer W by the illumination is taken into the imaging apparatus 300, an image of the bonding surface W J of wafer W is captured by the image capturing device 300. Image of the bonding surface W J of wafer W captured is outputted to the control unit 350, the control unit 350, the presence or absence of adhesive residue G at the joint surface W J of wafer W is inspected (FIG. 14 step A5).
  • the wafer W to be processed is transferred to the bonding surface cleaning apparatus 40 of the post-inspection cleaning station 8 by the third transfer apparatus 51, and the bonding surface is cleaned in the bonding surface cleaning apparatus 40.
  • adhesive G on W J is removed (step A6 in FIG. 14).
  • the process A6 is the same as the above-described process A4, and thus description thereof is omitted. Further, for example, when it is confirmed by the inspection device 7 that there is no residue of the adhesive G, the step A6 may be omitted.
  • the wafer W is, the bonding surface W J passed in a state where upward to the second holding portion 261 of the reversing device 42, the non-bonding surface W of the wafer W by the second holding portion 261 The entire surface of N is held.
  • the Bernoulli chuck 230 of the third transport device 51 is retracted from above the second holding unit 261, and then the second holding unit 261 is raised by the driving unit 272, in other words, as shown in FIG.
  • the first holding unit 260 is brought closer.
  • the wafer W to be processed is held by the first holding unit 260 with the non-bonding surface W N facing downward.
  • the second holding unit 261 is lowered to separate the first holding unit 260 and the second holding unit 261, and then the retracted Bernoulli chuck 230 of the third transport device 51 is rotated about the horizontal axis. Move. Then, with the Bernoulli chuck 230 facing upward, the Bernoulli chuck 230 is disposed below the first holding unit 260. Next, the Bernoulli chuck 230 is raised, and at the same time, the holding of the wafer W to be processed by the first holding unit 260 is stopped. Thereby, wafer W which has been held the joint surface W J by Bernoulli chuck 230 when it is carried into the joint surface cleaning apparatus 40, as shown in FIG.
  • the non-bonding surface W N by Bernoulli chuck 230 It will be held. That is, the front and back surfaces of the wafer to be processed held by the Bernoulli chuck 230 are reversed. Thereafter, the Bernoulli chuck 230 is retracted from the reversing device 42 while the non-bonding surface W N of the wafer W to be processed is held.
  • the wafer W to be processed is reversed by the reversing device 42 without being transferred to the bonding surface cleaning device 40.
  • the inversion method is the same as that described above.
  • the Bernoulli chuck 230 of the third transfer device 51 is rotated around the horizontal axis while holding the wafer to be processed W, and the wafer to be processed W is inverted in the vertical direction. Then, wafer W is non-bonding surface W N is transported to the inspection apparatus 7 again by the Bernoulli chuck 230 in a state facing upward, inspection of the non-bonding surface W N is performed (step A8 in FIG. 14).
  • the wafer W to be processed is transferred to the non-bonding surface cleaning device 41 by the third transfer device 51, and the non-bonding surface W in the non-bonding surface cleaning device 41. N is washed (step A9 in FIG. 14).
  • the process A9 is the same as the above-described process A4, and thus description thereof is omitted. For example, when it is confirmed by the inspection apparatus 7 that there is no residue of the adhesive G, the process A9 may be omitted.
  • the cleaned wafer W to be processed is transferred to the post-processing station 4 by the third transfer device 51. If no residue of the adhesive G is confirmed by the inspection apparatus 7, the wafer W to be processed is transferred to the post-processing station 4 without being transferred to the non-bonding surface cleaning apparatus 41.
  • predetermined post-processing is performed on the processing target wafer W in the post-processing station 4 (step A10 in FIG. 14).
  • the processing target wafer W is commercialized.
  • wafer W with a peel defects from bonded wafer T including a defect is conveyed to the station 2 loading and unloading by the first transfer device 20. Thereafter, the processing target wafer W having a defect is unloaded from the loading / unloading station 2 and collected (step A11 in FIG. 14).
  • the support wafer S peeled off by the peeling device 30 is transferred to the second cleaning device 33 by the first transfer device 20. Then, in the second cleaning device 33, the adhesive on the joint surface S J of the support wafer S is removed, the bonding surfaces S J is cleaned (step A12 in FIG. 14).
  • the cleaning of the support wafer S in the step A12 is the same as the removal of the adhesive G on the wafer W to be processed in the above-described step A4, and thus the description thereof is omitted.
  • the support wafer S which joint surface S J is cleaned is conveyed to station 2 loading and unloading by the first transfer device 20. Thereafter, the support wafer S is unloaded from the loading / unloading station 2 and collected (step A13 in FIG. 14). In this way, a series of separation processing of the processing target wafer W and the supporting wafer S is completed.
  • the blade 161 is inserted into the bonding surface of the wafer W to be processed and the support wafer S from the side of the overlapped wafer T, that is, the adhesive G, and the cut C is made.
  • a gas is supplied from the air nozzle 163 to the notch C, and the wafer W to be processed and the support wafer S are separated. Since gas is supplied from the air nozzle 163 to the cut C formed by the blade 161 in this way, for example, even when the gas supply pressure is low, the gas can easily enter the bonding surface between the processing target wafer W and the support wafer S. Can be made. Therefore, according to this Embodiment, the to-be-processed wafer W and the support wafer S can be peeled appropriately, without being damaged to the to-be-processed wafer W and the support wafer S.
  • the wafer to be processed W held by the first holding unit 110 is rotated by the rotation mechanism 130 while the gas is supplied from the air nozzle 163, the wafer to be processed W and the support wafer S can be more easily separated. Can do.
  • the processing target wafer W is rotated, but the supporting wafer S may be rotated. Alternatively, both the processing target wafer W and the supporting wafer S may be rotated. Needless to say, the rotation mechanism 130 can be omitted when the wafer W to be processed and the support wafer S can be appropriately peeled only by supplying gas from the air nozzle 163.
  • the cutting mechanism 161 and the fluid supply mechanism 162 are integrally formed, the formation of the cutting C by the blade 161 and the subsequent supply of gas from the air nozzle 163 can be performed smoothly. Therefore, the wafer W to be processed and the support wafer S can be efficiently separated. Furthermore, since the driving unit 170 for moving the blade 161 and the air nozzle 163 can be shared, the configuration of the peeling device 30 can be simplified, and the manufacturing cost of the peeling device 30 can be reduced.
  • the peeling system 1 of the above embodiment after the superposed wafer T is peeled off from the wafer to be processed W and the support wafer S in the peeling device 30, the wafer to be processed W peeled off in the first cleaning device 31.
  • the separated support wafer S can be cleaned in the second cleaning device 33.
  • a series of stripping processes from the stripping of the processing target wafer W and the supporting wafer S to the cleaning of the processing target wafer W and the cleaning of the supporting wafer S can be efficiently performed in one stripping system 1. Can be done well.
  • the cleaning of the processing target wafer W and the cleaning of the support wafer S can be performed in parallel.
  • the other wafer to be processed W and the support wafer S can be processed by the first cleaning device 31 and the second cleaning device 33. . Therefore, the wafer W to be processed and the support wafer S can be efficiently peeled, and the throughput of the peeling process can be improved.
  • the process from the separation of the wafer to be processed W and the support wafer S to the post-processing of the wafer to be processed W can be performed, so that the throughput of the wafer processing can be further improved.
  • the following method may be used in order to more efficiently peel off the processing target wafer W and the supporting wafer S.
  • the supply port 164 of the air nozzle 163 may be moved in the thickness direction of the overlapped wafer T.
  • the air nozzle 163 may be swung by a driving unit 170 as a moving mechanism, or a separate moving mechanism (not shown) may be provided to swing the air nozzle 163. .
  • gas is supplied from the supply port 164 to the overlapped wafer T while the control unit 350 moves the supply port 164 of the air nozzle 163 in the thickness direction of the overlapped wafer T. Since this gas vibrates the outer peripheral portion of the superposed wafer T, the gas easily enters the bonding surface between the wafer W to be processed and the support wafer S. For this reason, the to-be-processed wafer W and the support wafer S can be peeled further efficiently.
  • control unit 350 and the supply device group 167 control the gas supply amount from the air nozzle 163 so that the gas is repeatedly supplied from the air nozzle 163 with a relatively large supply amount and a relatively small supply amount. Also good. Even in such a case, since the outer peripheral portion of the superposed wafer T is vibrated by this gas, the gas can easily enter the bonding surface between the processing target wafer W and the supporting wafer S. For this reason, the to-be-processed wafer W and the support wafer S can be peeled further efficiently.
  • a plurality of peeling mechanisms 160 may be provided as shown in FIG. In such a case, since the gas can be supplied from the plurality of air nozzles 163 to the bonding surface between the processing target wafer W and the supporting wafer S, the processing target wafer W and the supporting wafer S can be more efficiently separated.
  • a plurality of fluid supply mechanisms 162 may be provided.
  • the tip of the blade 161 of the peeling mechanism 160 and the tip of the air nozzle 163 may be curved along the outer peripheral portion of the overlapped wafer T in plan view. .
  • the distance between the tip of the blade 161 and the overlapped wafer T becomes uniform, a uniform cut C can be made on the bonding surface between the wafer W to be processed and the support wafer S.
  • the distance between the supply port 164 of the air nozzle 163 and the overlapped wafer T is also uniform, the gas can be supplied to the bonding surface between the wafer to be processed W and the support wafer S with a uniform pressure. Therefore, the processing target wafer W and the supporting wafer S can be more appropriately separated.
  • only the air nozzle 163 may be curved along the outer peripheral portion of the overlapped wafer T.
  • the fluid supply mechanism 162 has the air nozzle 163 and supplies gas to the superposed wafer T.
  • the fluid supplied from the fluid supply mechanism 162 is not limited to gas.
  • the fluid supply mechanism 162 may have a pure water nozzle (not shown) as a fluid nozzle that supplies pure water that is a liquid. Then, pure water is supplied from the pure water nozzle to the bonding surface between the wafer to be processed W and the support wafer S, and the wafer to be processed W and the support wafer S are separated by the pure water. In such a case, when the wafer to be processed W and the support wafer S are peeled off, the surfaces of the wafer to be processed W and the support wafer S can be cleaned. Therefore, it is possible to improve the throughput of the separation process between the processing target wafer W and the supporting wafer S.
  • the fluid supply mechanism 162 may have a two-fluid nozzle (not shown) that supplies gas and pure water.
  • the processing target wafer W and the supporting wafer S can be separated by the gas from the two-fluid nozzle, and the surfaces of the processing target wafer W and the supporting wafer S can be cleaned with pure water from the two-fluid nozzle. Therefore, it is possible to improve the throughput of the separation process between the processing target wafer W and the supporting wafer S.
  • the cutting mechanism 161 and the fluid supply mechanism 162 are integrally formed. However, the cutting mechanism 161 and the fluid supply mechanism 162 may be provided separately.
  • the first holding unit 110 and the second holding unit 111 may be provided with a heating mechanism.
  • a heating mechanism 360 that heats the wafer W to be processed is provided inside the main body 120 and above the suction space 122.
  • the second holding part 111 has a flat plate-like main body part 361.
  • a suction tube 362 for sucking and holding the support wafer S is provided inside the main body 361.
  • the suction pipe 362 is connected to a negative pressure generator (not shown) such as a vacuum pump.
  • a heating mechanism 363 that heats the support wafer S is provided inside the main body 361.
  • a heater is used for the heating mechanisms 360 and 363.
  • the raising / lowering pin (not shown) for supporting and raising / lowering the superposition
  • the elevating pin is inserted through a through hole (not shown) formed in the second holding part 111 and can protrude from the upper surface of the second holding part 111.
  • an exhaust port (not shown) for exhausting the atmosphere inside the processing container 100 is formed on the bottom surface of the processing container 100.
  • At least the processing target wafer W or the supporting wafer S can be heated by the heating mechanisms 360 and 363.
  • Heating of the processing target wafer W and the supporting wafer S may be performed by the heating mechanisms 360 and 363 when the superposed wafer T is carried in, and when the separated processing target wafer W and the supporting wafer S are carried out, respectively. It may be performed by the heating mechanisms 360 and 363.
  • the predetermined process with respect to the said to-be-processed wafer W and the support wafer S can be performed by this heating. This heating can also be used to soften the adhesive G when the wafer W to be processed and the support wafer S are peeled off.
  • a dicing frame F and a dicing tape P may be provided as shown in FIG. 31 in order to suppress damage to the overlapped wafer T.
  • the dicing frame F has a substantially rectangular shape in plan view, and has an annular shape in which an opening along the outer peripheral portion of the overlapped wafer T is formed inside.
  • the overlapped wafer T is disposed in the opening inside the dicing frame F.
  • the dicing tape P is stuck to the non-bonding surface W N of the surface F S and wafer W in the dicing frame F.
  • the superposed wafer T is held by the dicing frame F and the dicing tape P.
  • the overlapped wafer T provided with the dicing frame F and the dicing tape P is held by the first holding unit 110.
  • the first holding part 110 has a substantially flat main body part 120. Inside the first holding portion 110, 370 for attracting and holding the non-bonding surface W N of the wafer W through the dicing tape P is provided.
  • the suction pipe 370 is connected to a negative pressure generator (not shown) such as a vacuum pump.
  • a plurality of support portions 371 are provided on the outer periphery of the main body 120 and outside the dicing tape P.
  • the supporting portion 371 is, for example, the negative pressure generating device, such as a vacuum pump (not shown) is connected, the support unit 371 can be sucked and held the surface F S of the dicing frame F on the outside of the dicing tape P.
  • the negative pressure generating device such as a vacuum pump (not shown)
  • the thinned wafer W to be processed is subjected to predetermined processing and conveyance in a state protected by the dicing frame F. Therefore, damage to the processing target wafer W after peeling can be suppressed.
  • the wafer to be processed W and the support wafer S are peeled in a state where the wafer to be processed W is disposed on the upper side and the support wafer S is disposed on the lower side.
  • the vertical arrangement of the wafer W to be processed and the support wafer S may be reversed.
  • the two-fluid nozzle is used as the cleaning liquid nozzle 202 of the first cleaning device 31, the second cleaning device 33, the bonding surface cleaning device 40, and the non-bonding surface cleaning device 41.
  • the form of the nozzle 202 is not limited to this embodiment, and various nozzles can be used.
  • a nozzle body in which a nozzle for supplying an organic solvent and a nozzle for supplying an inert gas are integrated a spray nozzle, a jet nozzle, a megasonic nozzle, or the like may be used.
  • a cleaning liquid heated to 80 ° C. may be supplied.
  • a nozzle for supplying IPA may be provided in addition to the cleaning liquid nozzle 202. Good.
  • IPA isopropyl alcohol
  • the cleaning liquid on the wafer W or the support wafer S is replaced with IPA. Then, the bonding surfaces W J and S J of the processing target wafer W or the support wafer S are more reliably cleaned.
  • the configuration of the inspection apparatus 7 is not limited to the configuration of the above embodiment.
  • the inspection apparatus 7 can take various configurations as long as it can capture an image of the wafer W to be processed and inspect the presence or absence of the residue of the adhesive G and the residue of the oxide film on the wafer W to be processed.
  • a temperature adjusting device for cooling the processing target wafer W heated by the peeling device 30 to a predetermined temperature may be provided.
  • the temperature of the wafer W to be processed is adjusted to an appropriate temperature, so that subsequent processing can be performed more smoothly.
  • the three-dimensional integration technology is a technology that meets the recent demand for higher integration of semiconductor devices. Instead of arranging a plurality of highly integrated semiconductor devices in a horizontal plane, This is a technique of three-dimensional lamination. Also in this three-dimensional integration technique, it is required to reduce the thickness of wafers to be processed, and the wafers to be processed are bonded to a support wafer to perform a predetermined process.
  • the processing target wafer W may be an SOI (Silicon On Insulator) wafer.
  • SOI Silicon On Insulator
  • an insulating film made of, for example, SiO 2 is formed on the wafer W to be processed.
  • a peeling system 400 shown in FIG. 32 is used for peeling the overlapped wafer T.
  • Stripping system 400 for example, a plurality of wafer W to and from an external, a plurality of support wafer S, a plurality of bonded wafer T to accommodate each cassette C W, C S, unloading station C T is loaded and unloaded 401, a processing station 402 including various processing apparatuses for performing predetermined processing on the processing target wafer W, the supporting wafer S, and the overlapped wafer T, and a wafer formed between the loading / unloading station 401 and the processing station 402.
  • the conveyance area 403 is integrally connected.
  • the carry-in / out station 401, the wafer transfer area 403, and the processing station 402 are arranged in this order in the X direction (vertical direction in FIG. 32).
  • the loading / unloading station 401 is provided with a cassette mounting table 410.
  • a plurality of, for example, three cassette mounting plates 411 are provided on the cassette mounting table 410.
  • the cassette placement plates 411 are arranged in a line in the Y direction (left and right direction in FIG. 32).
  • the cassettes C W , C S , and C T can be placed on these cassette mounting plates 411 when the cassettes C W , C S , and C T are carried in and out of the peeling system 400.
  • the carry-in / out station 401 is configured to be capable of holding a plurality of wafers W to be processed, a plurality of support wafers S, and a plurality of superposed wafers T.
  • the number of cassette mounting plates 411 is not limited to this embodiment, and can be arbitrarily determined.
  • the cassette mounting table 410 is provided with a position adjusting device 412 that adjusts the horizontal direction of the overlapped wafer T.
  • the position adjusting device 412 also functions as a buffer by accommodating a plurality of superposed wafers T.
  • a first transfer device 420 is arranged in the wafer transfer region 403, a first transfer device 420 is arranged.
  • the first transfer device 420 includes a transfer arm that can move around, for example, the vertical direction, the horizontal direction (Y direction, X direction), and the vertical axis.
  • the first transfer device 420 moves in the wafer transfer region 403 and can transfer the processing target wafer W, the support wafer S, and the overlapped wafer T between the loading / unloading station 401 and the processing station 402.
  • the processing station 3 includes a peeling device 430 that peels the superposed wafer T from the processing target wafer W and the supporting wafer S.
  • a heat treatment device 431 that heat-treats the overlapped wafer T is disposed on the positive side of the peeling device 430 in the Y direction (right side in FIG. 32).
  • a transition device 432 for temporarily placing the wafer W to be processed is disposed on the Y direction negative direction side (left direction side in FIG. 32) of the peeling device 430.
  • a second transport device 433 is provided between the peeling device 430 and the transition device 432.
  • the transition device 432, the second transfer device 433, the peeling device 430, and the heat treatment device 431 are arranged in this order. Note that the heat treatment apparatuses 431 may be stacked in multiple stages.
  • the configuration of the peeling device 430 is the same as the configuration of the peeling device 30 in the above-described peeling system 1, and a description thereof will be omitted.
  • the configuration of the second transfer device 433 is the same as the configuration of the second transfer device 32 described above, and thus the description thereof is omitted.
  • the heat treatment apparatus 431 includes a processing container 440 that can be sealed inside.
  • a loading / unloading port (not shown) for the processing target wafer W is formed on the side surface of the processing container 440, and an opening / closing shutter (not shown) is provided at the loading / unloading port.
  • a gas supply port 441 for supplying an inert gas such as nitrogen gas is formed in the processing container 440 on the ceiling surface of the processing container 440.
  • a gas supply pipe 443 communicating with the gas supply source 442 is connected to the gas supply port 441.
  • the gas supply pipe 443 is provided with a supply device group 444 including a valve for controlling the flow of the inert gas, a flow rate adjusting unit, and the like.
  • a suction port 445 for sucking the atmosphere inside the processing container 440 is formed on the bottom surface of the processing container 440.
  • An intake pipe 447 communicating with a negative pressure generator 446 such as a vacuum pump is connected to the intake port 445.
  • a heating unit 450 that heat-processes the overlapped wafer T and a temperature adjustment unit 451 that adjusts the temperature of the overlapped wafer T are provided.
  • the heating unit 450 and the temperature adjustment unit 451 are arranged side by side in the Y direction.
  • the heating unit 450 includes an annular holding member 461 that houses the hot plate 460 and holds the outer periphery of the hot plate 460, and a substantially cylindrical support ring 462 that surrounds the outer periphery of the holding member 461.
  • the hot plate 460 has a thick and substantially disk shape, and can place and heat the superposed wafer T.
  • the heater 463 is incorporated in the heat plate 460, for example.
  • the heating temperature of the hot plate 460 is controlled by the control unit 350, for example.
  • the hot platen 460 can heat-process the superposition
  • elevating pins 470 are provided below the hot platen 460 for example, three elevating pins 470 are provided for supporting and lifting the superposed wafer T from below.
  • the elevating pin 470 can be moved up and down by an elevating drive unit 471.
  • through holes 472 that penetrate the hot plate 460 in the thickness direction are formed at, for example, three locations.
  • the elevating pins 470 are inserted through the through holes 472 and can protrude from the upper surface of the heat plate 460.
  • the temperature adjustment unit 451 has a temperature adjustment plate 480.
  • the temperature adjustment plate 480 has a substantially rectangular flat plate shape, and the end surface on the heat plate 460 side is curved in an arc shape.
  • the temperature adjustment plate 480 may have a substantially shape.
  • the temperature adjustment plate 480 is formed with two slits 481 along the Y direction.
  • the slit 481 is formed from the end surface of the temperature adjustment plate 480 on the heat plate 460 side to the vicinity of the center portion of the temperature adjustment plate 480.
  • the slit 481 can prevent the temperature adjustment plate 480 from interfering with the lift pins 470 of the heating unit 450.
  • the temperature adjustment plate 480 includes a temperature adjustment member (not shown) such as a Peltier element.
  • the cooling temperature of the temperature adjustment plate 480 is controlled by the control unit 350, for example, and the superposed wafer T placed on the temperature adjustment plate 480 is cooled to a predetermined temperature. Note that a notch (not shown) for avoiding interference with the first transport device 420 is formed on the outer peripheral portion of the temperature adjustment plate 480.
  • the temperature adjustment plate 480 is supported by a support arm 482 as shown in FIG.
  • a drive unit 483 is attached to the support arm 482.
  • the drive unit 483 is attached to a rail 484 extending in the Y direction.
  • the rail 484 extends from the temperature adjustment unit 451 to the heating unit 450.
  • the drive unit 483 allows the temperature adjustment plate 480 to move between the heating unit 450 and the temperature adjustment unit 451 along the rail 484.
  • a cassette C T accommodating a plurality of bonded wafer T, an empty cassette C W, and an empty cassette C S is placed on the predetermined cassette mounting plate 411 of the loading and unloading station 2. Bonded wafer T in the cassette C T is taken out by the first transfer device 420 is conveyed to the position adjustment device 412. At this time, the superposed wafer T is transported in a state where the processing target wafer W is disposed on the upper side and the support wafer S is disposed on the lower side. Then, the position adjustment device 412 adjusts the direction of the overlapped wafer T while detecting the position of the notch portion of the overlapped wafer T. Thereafter, the overlapped wafer T is transferred to the heat treatment apparatus 431 of the processing station 3 by the first transfer apparatus 420.
  • the superposed wafer T carried into the heat treatment apparatus 431 is transferred from the first transfer apparatus 420 to the temperature adjustment plate 480. Thereafter, the temperature adjustment plate 480 is moved along the rail 484 to the upper side of the heat plate 460 by the driving unit 483, and the overlapped wafer T is transferred to the lift pins 470 that have been lifted and waited in advance. Thereafter, the raising / lowering pins 470 are lowered, and the superposed wafer T is placed on the hot platen 460. Then, the superposed wafer T on the hot plate 460 is heated to a predetermined temperature, for example, 450 ° C.
  • the elevating pin 470 is raised and the temperature adjusting plate 480 is moved above the hot plate 460.
  • the superposed wafer T is transferred from the raising / lowering pins 470 to the temperature adjustment plate 480, and the temperature adjustment plate 480 moves to the wafer transfer region 403 side.
  • the temperature of the superposed wafer T is adjusted to a predetermined temperature.
  • the heat-treated superposed wafer T is transferred to the peeling device 430 by the first transfer device 420. Then, in the peeling device 430, the superposed wafer T is peeled off into the processing target wafer W and the supporting wafer S. Note that the peeling of the overlapped wafer T in the peeling device 430 is the same as the steps A1 to A3 in the peeling device 30 in the above embodiment, and thus the description thereof is omitted.
  • the wafer W to be processed peeled off by the peeling device 430 is transferred to the transition device 432 by the second transfer device 433.
  • the front and back surfaces of the processing target wafer W are reversed by the second transfer device 433. That is, in the transition unit 432, the bonding surface W J of wafer W is placed to face upward.
  • the transfer method of the wafer W to be processed by the second transfer device 433 is the same as the transfer method of the wafer W to be processed by the second transfer device 32 in the above embodiment, and thus the description thereof is omitted.
  • the processing target wafer W is transferred to the loading / unloading station 401 by the first transfer device 420. Then, the processing target wafer W is unloaded from the loading / unloading station 401 and collected.
  • the support wafer S peeled by the peeling device 430 is transferred to the loading / unloading station 401 by the first transfer device 420. Then, the support wafer S is unloaded from the loading / unloading station 401 and collected.
  • the wafer to be processed W and the support wafer S are appropriately damaged without being damaged in the peeling device 430. Can be peeled off.
  • the throughput of the wafer processing can be improved.
  • a post-processing system (not shown) may be connected to the above peeling system 400.
  • the post-processing system is arranged in connection with the transition device 432.
  • an apparatus for performing various processes on the processing target wafer W such as a cleaning apparatus for the processing target wafer W, is arranged.
  • the post-processing of the processing target wafer W can be performed after the processing target wafer W and the supporting wafer S are separated in a series of processes, the throughput of the wafer processing can be further improved.
  • the joint surface S J of the support wafer S is an SOI wafer is formed with an insulating film, and a support wafer S and wafer W previously chemically bonded bonded wafer T is peeled off system of this embodiment 1 is processed.
  • the purpose of the release process in this embodiment the bonded wafer T during separation to support wafer S and wafer W, an insulating film formed on the bonding surface S J to the bonding surface W J of wafer W by transferring, it is to form an insulating film on the bonding surface W J.
  • FIG. 35 is a plan view of the peeling mechanism 160 in the second embodiment
  • FIG. 36 is a side view of the peeling mechanism 160 in the second embodiment.
  • the second drive unit 500 is attached to the rail 171.
  • a rail 501 extending in the horizontal direction (X direction in FIG. 35) is provided on the second drive unit 500.
  • the support member 168 is attached on the rail 501.
  • the second driving unit 500 includes a pneumatic device such as an air cylinder as a driving source. The second driving unit 500 can move the support member 168 along the rail 501 from the stopped state at a faster speed than the driving unit 170.
  • the peeling mechanism 160 includes a measuring unit, for example, a load cell 502, for measuring a force acting on the tip portion 161a of the blade 161.
  • the load cell 502 acts on the tip portion 161a when the tip portion 161a of the blade 161 is pressed against the joint surface (hereinafter, also referred to as “joint portion”) of the processing wafer W and the support wafer S in the superposed wafer T.
  • joint portion hereinafter, also referred to as “joint portion”
  • the driving unit 170 is operated with the second driving unit 500 stopped, and the blade 161 is moved at the first speed (step A11 in FIG. 37). *
  • the load cell 502 measures the force acting on the tip 161a of the blade 161, and determines whether or not this measured value has reached a predetermined value (step A12 in FIG. 37). When this measured value reaches a predetermined value, it is determined that the tip 161a of the blade 161 has been abutted against the bonded portion of the superposed wafer T with a predetermined force, and the drive unit 170 is stopped (step of FIG. 37). A13). At this time, the tip portion 161a of the blade 161 is in a state of being slightly inserted or abutted against the bonded portion of the overlapped wafer T. *
  • the second drive unit 500 is operated while the drive unit 170 is stopped, and the blade 161 is moved at a second speed higher than the first speed from the stopped state (step A14 in FIG. 37).
  • the blade 161 is moved at a second speed higher than the first speed from the stopped state (step A14 in FIG. 37).
  • an impact is applied to the bonded portion of the overlapped wafer T, and the overlapped wafer T is separated into the processing target wafer W and the support wafer S.
  • the insulating film on the bonding surface S J is stripped from the joint surface S J, is transferred (moved) to the bonding surface W J.
  • the blade 161 is moved at a second speed from the stopped state to give an impact to the bonded portion of the overlapped wafer T. insulating film on the S J it is possible to peel while being transferred to the appropriate bonding surface W J over the entire surface. Further, the blade 161 is moved at the first low speed until the tip 161a of the blade 161 abuts against the bonded portion of the overlapped wafer T. Therefore, the blade 161 can be pressed against the bonded portion of the overlapped wafer T with high accuracy. it can.
  • the blade 161 can reach the second speed in an instant from a stopped state, and a sufficient impact is applied to the bonded portion of the overlapped wafer T. Can be given.
  • the drive source of the second drive unit 500 is not limited to a pneumatic device such as an air cylinder.
  • An electric device such as a motor may be used as long as it can reach the second speed instantaneously from the stopped state.
  • the second drive unit 500 may have an impact applying unit for applying an impact to the blade 161, for example, a hammer (not shown).
  • a hammer (not shown) is provided so as to apply an impact in the horizontal direction (X-direction positive direction) to the blade 161.
  • a hammer is operated instead of process A14 and an impact is given to the front-end
  • the moving speed of the blade 161 is not particularly limited, and may be moved at a predetermined speed.
  • FIG. 38 is a side view of a blade 503 according to another embodiment.
  • the tip portion 503a of the blade 503 is not line-symmetrical like the blade 161, and is constituted by a horizontal surface 504 and an inclined surface 505. That is, the upper surface of the tip portion 503a extends in the surface direction (horizontal direction) of the bonding surface of the overlapped wafer T in a side view to form a horizontal surface 504, and the lower surface of the tip portion 503a is a surface of the bonding surface of the overlapped wafer T in a side view.
  • An inclined surface 505 is formed by extending from the surface direction (horizontal direction).
  • the peeling apparatus 30 performs a peeling process while holding the upper surface of the superposed wafer T. Therefore the use of tool 161, wafer W when inserting the distal end portion 161a to the bonded wafer T is not escape on, the upward force from the distal portion 161a with respect to joint surface W J of wafer W Join. This force, circuit formed on the bonding surface W J (product) there is a risk of breakage.
  • the blade 503 is used, and the blade 503 is attached to the peeling device 30 so that the horizontal surface 504 becomes the upper surface, and the peeling processing is performed.
  • an upward force by the tool 503 to the bonding surface W J of wafer W can also be reduced than blade 161, the bonding surface W J to form a circuit corruption This can reduce the risk of occurrence.
  • the present invention is not limited to such examples. It is obvious for those skilled in the art that various modifications or modifications can be conceived within the scope of the idea described in the claims, and these naturally belong to the technical scope of the present invention. It is understood.
  • the present invention is not limited to this example and can take various forms.
  • the present invention can also be applied to a case where the substrate is another substrate such as an FPD (flat panel display) other than a wafer or a mask reticle for a photomask.
  • FPD flat panel display

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

La présente invention se rapporte à un appareil de décollement qui décolle un substrat qui doit être traité, et un substrat de support d'un substrat lié qui comprend le substrat qui doit être traité, et le substrat de support reliés l'un à l'autre. L'appareil de décollement comprend : un mécanisme de découpe qui comprend un bord d'attaque pointu et qui découpe dans le substrat lié en étant inséré dans la surface de liaison située entre le substrat qui doit être traité, et le substrat de support depuis le côté du substrat lié ; et un mécanisme d'alimentation en fluide qui fournit un fluide à la surface de liaison située entre le substrat qui doit être traité, et le substrat de support depuis le côté du substrat lié. Le mécanisme de découpe et le mécanisme d'alimentation en fluide sont formés d'un seul tenant. Le mécanisme de découpe est pourvu de lames, le mécanisme d'alimentation en fluide est pourvu d'une buse de fluide et la paire de lames est agencée sur les deux côtés de la buse de fluide.
PCT/JP2013/055115 2012-03-13 2013-02-27 Appareil de décollement, système de décollement et procédé de décollement WO2013136982A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2012055645 2012-03-13
JP2012-055645 2012-03-13
JP2013028209A JP2013219328A (ja) 2012-03-13 2013-02-15 剥離装置、剥離システム、剥離方法、プログラム及びコンピュータ記憶媒体
JP2013-028209 2013-02-15

Publications (1)

Publication Number Publication Date
WO2013136982A1 true WO2013136982A1 (fr) 2013-09-19

Family

ID=49160898

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2013/055115 WO2013136982A1 (fr) 2012-03-13 2013-02-27 Appareil de décollement, système de décollement et procédé de décollement

Country Status (3)

Country Link
JP (1) JP2013219328A (fr)
TW (1) TW201403731A (fr)
WO (1) WO2013136982A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015005742A (ja) * 2013-05-24 2015-01-08 タツモ株式会社 剥離装置
JP2015162569A (ja) * 2014-02-27 2015-09-07 東京エレクトロン株式会社 剥離方法、プログラム、コンピュータ記憶媒体、剥離装置及び剥離システム
EP3321955A4 (fr) * 2015-07-08 2019-02-27 Zhejiang Microtech Material Co., Ltd. Dispositif de séparation de plaquette
JPWO2021006092A1 (fr) * 2019-07-10 2021-01-14
JPWO2021006091A1 (fr) * 2019-07-10 2021-01-14

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6470414B2 (ja) 2015-08-11 2019-02-13 東京応化工業株式会社 支持体分離装置及び支持体分離方法
JP6695227B2 (ja) 2016-07-19 2020-05-20 東京応化工業株式会社 支持体分離装置および支持体分離方法
JP6975056B2 (ja) * 2018-01-29 2021-12-01 株式会社ディスコ 搬送機構
KR102312389B1 (ko) * 2020-02-07 2021-10-13 정라파엘 웨이퍼 디본딩 유닛 및 이를 포함하는 웨이퍼 분리 장치
KR102339362B1 (ko) * 2020-02-11 2021-12-15 정라파엘 웨이퍼 디본딩 유닛 및 이를 포함하는 웨이퍼 분리 장치

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000223383A (ja) * 1999-02-02 2000-08-11 Canon Inc 分離装置、分離方法及び半導体基板の製造方法
JP2004327728A (ja) * 2003-04-24 2004-11-18 Seiko Epson Corp 転写方法、転写体の製造方法、回路基板の製造方法、電気光学装置および電子機器
JP2011103471A (ja) * 2002-01-03 2011-05-26 Soi Tec Silicon On Insulator Technologies 基板層切断装置及び方法
WO2012026262A1 (fr) * 2010-08-23 2012-03-01 東京エレクトロン株式会社 Système et procédé de pelage et support de stockage informatique

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2823373B1 (fr) * 2001-04-10 2005-02-04 Soitec Silicon On Insulator Dispositif de coupe de couche d'un substrat, et procede associe

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000223383A (ja) * 1999-02-02 2000-08-11 Canon Inc 分離装置、分離方法及び半導体基板の製造方法
JP2011103471A (ja) * 2002-01-03 2011-05-26 Soi Tec Silicon On Insulator Technologies 基板層切断装置及び方法
JP2004327728A (ja) * 2003-04-24 2004-11-18 Seiko Epson Corp 転写方法、転写体の製造方法、回路基板の製造方法、電気光学装置および電子機器
WO2012026262A1 (fr) * 2010-08-23 2012-03-01 東京エレクトロン株式会社 Système et procédé de pelage et support de stockage informatique

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015005742A (ja) * 2013-05-24 2015-01-08 タツモ株式会社 剥離装置
JP2015162569A (ja) * 2014-02-27 2015-09-07 東京エレクトロン株式会社 剥離方法、プログラム、コンピュータ記憶媒体、剥離装置及び剥離システム
US9724906B2 (en) 2014-02-27 2017-08-08 Tokyo Electron Limited Delamination method, delamination device, and delamination system
EP3321955A4 (fr) * 2015-07-08 2019-02-27 Zhejiang Microtech Material Co., Ltd. Dispositif de séparation de plaquette
JPWO2021006092A1 (fr) * 2019-07-10 2021-01-14
JPWO2021006091A1 (fr) * 2019-07-10 2021-01-14
WO2021006091A1 (fr) * 2019-07-10 2021-01-14 東京エレクトロン株式会社 Séparateur et procédé de séparation
WO2021006092A1 (fr) * 2019-07-10 2021-01-14 東京エレクトロン株式会社 Dispositif de séparation et procédé de séparation
US20220270895A1 (en) * 2019-07-10 2022-08-25 Tokyo Electron Limited Separating apparatus and separating method
JP7229353B2 (ja) 2019-07-10 2023-02-27 東京エレクトロン株式会社 分離装置及び分離方法
JP7308265B2 (ja) 2019-07-10 2023-07-13 東京エレクトロン株式会社 分離装置及び分離方法

Also Published As

Publication number Publication date
TW201403731A (zh) 2014-01-16
JP2013219328A (ja) 2013-10-24

Similar Documents

Publication Publication Date Title
WO2013136982A1 (fr) Appareil de décollement, système de décollement et procédé de décollement
JP5323867B2 (ja) 基板反転装置、基板反転方法、剥離システム、プログラム及びコンピュータ記憶媒体
JP5379171B2 (ja) 接合システム、基板処理システム、接合方法、プログラム及びコンピュータ記憶媒体
JP5580806B2 (ja) 剥離装置、剥離システム、剥離方法、プログラム及びコンピュータ記憶媒体
JP5829171B2 (ja) 剥離システム、剥離方法、プログラム及びコンピュータ記憶媒体
JP6158721B2 (ja) 洗浄装置、剥離システム、洗浄方法、プログラム及びコンピュータ記憶媒体
JP5478565B2 (ja) 接合システム
JP5538282B2 (ja) 接合装置、接合方法、プログラム及びコンピュータ記憶媒体
JP5913053B2 (ja) 剥離装置、剥離システム、剥離方法、プログラム及びコンピュータ記憶媒体
JP5740550B2 (ja) 剥離装置、剥離システム、剥離方法、プログラム及びコンピュータ記憶媒体
KR101805964B1 (ko) 박리 시스템, 박리 방법 및 컴퓨터 기억 매체
JP5374462B2 (ja) 剥離システム、剥離方法、プログラム及びコンピュータ記憶媒体
WO2012176629A1 (fr) Système de décollement, procédé de décollement, et support mémoire informatique
JP5617065B2 (ja) 剥離方法、プログラム、コンピュータ記憶媒体及び剥離システム
JP5777549B2 (ja) 剥離装置、剥離システム、剥離方法、プログラム及びコンピュータ記憶媒体
JP2013120903A (ja) 剥離装置、剥離システム、剥離方法、プログラム及びコンピュータ記憶媒体
JP5717803B2 (ja) 剥離システム、剥離方法、プログラム及びコンピュータ記憶媒体
JP5717614B2 (ja) 剥離装置、剥離システム、剥離方法、プログラム及びコンピュータ記憶媒体
JP2014003237A (ja) 剥離システム、剥離方法、プログラム及びコンピュータ記憶媒体
JP5552559B2 (ja) 剥離システム、剥離方法、プログラム及びコンピュータ記憶媒体

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 13761343

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 13761343

Country of ref document: EP

Kind code of ref document: A1