WO2013118622A1 - 光学製品及びその製造方法 - Google Patents
光学製品及びその製造方法 Download PDFInfo
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- WO2013118622A1 WO2013118622A1 PCT/JP2013/052067 JP2013052067W WO2013118622A1 WO 2013118622 A1 WO2013118622 A1 WO 2013118622A1 JP 2013052067 W JP2013052067 W JP 2013052067W WO 2013118622 A1 WO2013118622 A1 WO 2013118622A1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/113—Anti-reflection coatings using inorganic layer materials only
- G02B1/115—Multilayers
- G02B1/116—Multilayers including electrically conducting layers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
- C03C17/3417—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials all coatings being oxide coatings
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
- C03C17/3429—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating
- C03C17/3447—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating comprising a halide
- C03C17/3452—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating comprising a halide comprising a fluoride
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/42—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating of an organic material and at least one non-metal coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/405—Oxides of refractory metals or yttrium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/113—Anti-reflection coatings using inorganic layer materials only
- G02B1/115—Multilayers
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/16—Optical coatings produced by application to, or surface treatment of, optical elements having an anti-static effect, e.g. electrically conducting coatings
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/18—Coatings for keeping optical surfaces clean, e.g. hydrophobic or photo-catalytic films
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/22—ZrO2
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/23—Mixtures
- C03C2217/231—In2O3/SnO2
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/70—Properties of coatings
- C03C2217/73—Anti-reflective coatings with specific characteristics
- C03C2217/734—Anti-reflective coatings with specific characteristics comprising an alternation of high and low refractive indexes
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/90—Other aspects of coatings
- C03C2217/94—Transparent conductive oxide layers [TCO] being part of a multilayer coating
- C03C2217/948—Layers comprising indium tin oxide [ITO]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
- Y10T428/2495—Thickness [relative or absolute]
- Y10T428/24967—Absolute thicknesses specified
- Y10T428/24975—No layer or component greater than 5 mils thick
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
Definitions
- the present invention relates to an optical product such as a lens and a filter, and a manufacturing method thereof.
- conductive antireflection films described in Patent Documents 1 and 2 are known. These optical products have a total of 3 to 4 layers in which ITO (Indium Tin Oxide) and magnesium fluoride (MgF 2 ) are laminated by vacuum deposition, and the conductivity is mainly imparted by ITO.
- the anti-static function is provided by MgF 2 having a low refractive index. In these optical products, MgF 2 is disposed in the outermost layer.
- An object of the present invention is to provide an optical product that has an antistatic function, is low in cost, is easy to design, and has very good optical performance, or a method for manufacturing the same. It is what.
- the inventions according to claims 5 and 7 provide an optical product having good optical performance with respect to transmitted light while using ITO and MgF 2 together with an antistatic function and an ultra-low antireflection function.
- the invention according to claim 13 is intended to provide a method for manufacturing such an optical product.
- the above-mentioned ones were not satisfactory from the viewpoint of high reflectivity characteristics and surface slipperiness by simply introducing an ITO film or MgF 2 film. Accordingly, the inventions described in claims 2 to 4 provide an optical product that combines an antistatic function and an ultra-low antireflection function to improve the optical performance with respect to transmitted light and also to provide a good slip property. It is intended.
- a multilayer film including a dielectric film and an ITO film is formed on one side or both sides of a transparent substrate.
- the ITO film has a physical film thickness of 3 nm to 7 nm.
- the invention according to claim 2 is characterized in that, in the above invention, the dielectric film on the surface side of the ITO film includes a ZrO 2 film.
- the invention described in claim 3 is characterized in that, in the above invention, the ZrO 2 film is disposed immediately above the ITO film.
- the invention according to claim 4 is characterized in that, in the above invention, the ZrO 2 film is disposed immediately above and immediately below the ITO film.
- the dielectric film includes an MgF 2 film, and the ITO film and the MgF 2 film are arranged not to be adjacent to each other. It is characterized by being.
- the invention according to claim 6 is characterized in that, in the above invention, the outermost layer of the multilayer film is the first layer, and the MgF 2 film is disposed in the second layer or the third layer. .
- the invention described in claim 7 is characterized in that, in the above invention, the ITO film is formed by vapor deposition accompanied by plasma treatment.
- the invention described in claim 8 is characterized in that, in the above invention, a fluorine-based resin film or a SiO 2 film is disposed in the outermost layer of the multilayer film.
- the invention according to claim 9 is the above invention, wherein the outermost SiO 2 film of the multilayer film is formed by vapor deposition accompanied by plasma treatment.
- the invention according to claim 10 is characterized in that, in the above invention, the fluororesin film has a physical film thickness of 10 nm or less.
- the dielectric film includes a plurality of high refractive materials and intermediate refractive materials, and in the multilayer film, the high refractive material and the intermediate refractive material are It is characterized by being alternately arranged.
- an invention according to claim 12 is a method of manufacturing the optical product, wherein the ITO film is formed by vapor deposition accompanied with plasma treatment. is there.
- the invention described in claim 13 is characterized in that, in the above invention, the outermost layer is a SiO 2 film, and the film is formed by vapor deposition accompanied by plasma treatment.
- 12 is a graph showing the spectral distribution of reflectance according to examination examples 1 to 11.
- 12 is a graph showing the spectral distribution of transmittance according to examination examples 1 to 11.
- 10 is a graph showing spectral distributions of absorption / scattering amounts in examination examples 1 to 11 and general products.
- 14 is a graph showing spectral transmittance distributions according to examination examples 2 and 12 to 14.
- 6 is a graph showing spectral distributions of absorption / scattering amounts of Examples 1 and 2 and Comparative Examples 1 to 3.
- 6 is a graph showing spectral distributions of transmittances of Examples 1 and 2 and Comparative Examples 1 to 3.
- 4 is a graph showing spectral distributions of single-sided reflectances of Examples 1 and 2 and Comparative Example 1.
- FIG. 9 is a chromaticity diagram (x, y, Y) of the CIE color system relating to various multilayer films of FIG. 8.
- 14 is a graph showing the spectral distribution of single-sided reflectance for various multilayer films belonging to Example 13.
- FIG. 11 is a chromaticity diagram (x, y, Y) of the CIE color system relating to various multilayer films of FIG. 10.
- a multilayer film having a dielectric film and a transparent conductive film as constituent elements is formed on one surface or both surfaces of a transparent substrate.
- Two or more kinds of dielectric films are preferably used.
- the term “transparent” means translucency and includes translucency.
- at least one of the films is formed by vapor deposition, and in this case, various films are formed on the edge surface to prevent a situation that affects the optical characteristics of the optical product. it can.
- the dielectric film is mainly used as a component for providing an antireflection function (by appropriately combining other films), and is combined with a high refractive index material or an intermediate refractive index material.
- the low refractive index material has a refractive index of about 1.5 or less
- the intermediate refractive index material has a refractive index of about 1.5 to 1.8
- the high refractive material has a refractive index of about 1. .8 or more.
- a plurality of types of dielectric films are alternately provided in order to provide an antireflection function with a low reflectance such that the reflectance is about 1 percent (%) or less, more preferably about 0.5% or less.
- the high refractive material and the intermediate refractive material are preferably laminated alternately.
- one MgF 2 film is disposed as close as possible to the outermost layer.
- a plurality of types of dielectric films are alternately arranged between the MgF 2 film and the base material, and preferably a high refractive material and an intermediate refractive material are alternately laminated.
- Specific examples of the dielectric film include titanium dioxide (TiO 2 ), ditantalum pentoxide (Ta 2 O 5 ), zirconium dioxide (ZrO 2 ), dialuminum trioxide (Al 2 O 3 ), niobium pentoxide (Nb). Examples thereof include metal oxides such as 2 O 5 ) and silicon dioxide (SiO 2 ).
- the transparent conductive film is ITO.
- an SiO 2 film or a fluorine resin film is preferably disposed on the outermost layer.
- a fluororesin film is used for the outermost layer, the inner film can be protected, water repellent performance can be imparted, and even if water drops or dirt adheres, it can be easily removed. It becomes easy to.
- the fluororesin is not particularly limited as long as it exhibits water repellency by film formation, and a commercially available resin can be used as appropriate.
- the physical film thickness of the fluororesin film (water repellent film) is preferably 10 nanometers (nm) or less from the viewpoint of providing uniformity and improving optical performance and water repellent performance.
- the SiO 2 film is used as the outermost layer, the inner film can still be protected, and if the SiO 2 film is formed by vapor deposition accompanied by plasma treatment such as ion assisted deposition (IAD), the film The durability can be further improved by increasing the strength.
- IAD ion assisted deposition
- the physical film thickness of a transparent conductive film shall be 3 nm or more from a viewpoint of sufficient antistatic property provision.
- the physical film thickness of the transparent conductive film is less than 3 nm, static electricity may be generated when the optical product is wiped off.
- the physical film thickness of the transparent conductive film is sufficient to reduce the amount of absorption of light entering and passing through the multilayer film and to ensure the uniformity of the transparent conductive film (with excellent optical performance against incident light). From the viewpoint of providing), the thickness is 7 nm or less.
- the physical film thickness of the transparent conductive film exceeds 7 nm, the amount of absorption is too large from the viewpoint of transmitting incident light as much as possible in an optical product, particularly a camera filter, which is not preferable.
- the transparent conductive film is deposited with plasma treatment such as IAD, the film formation can be performed more stably, and the optical performance can be further improved.
- the MgF 2 film and the transparent conductive film are arranged apart from each other, that is, one or more films are inserted between them.
- the MgF 2 film and the transparent conductive film are arranged apart from each other, that is, one or more films are inserted between them.
- the transparent conductive film is deposited with plasma processing such as IAD, even if it is adjacent to the MgF 2 film, no interaction such as white turbidity or scattering is observed, and the MgF 2 film and the transparent conductive film are separated.
- plasma processing such as IAD
- an MgF 2 film second When a binder layer is inserted between the protective film and the MgF 2 film when it is necessary to ensure adhesion between the protective film and the MgF 2 film, the binder layer becomes the second layer, so the MgF 2 film Is preferably the third layer.
- a ZrO 2 film is included in the dielectric film from the viewpoint of achieving both the characteristics relating to reflectivity and slipperiness while providing antistatic properties.
- the ZrO 2 film absorbs the surface roughness of the ITO film or MgF 2 film while maintaining good characteristics relating to the reflectance, thereby improving the slipperiness. Therefore, the ZrO 2 film is formed on the dielectric film on the surface side of the ITO film. preferably if it contains, furthermore, more preferably if directly ZrO 2 film is an ITO film, ZrO 2 film, if the directly above and below the ITO film, more preferable. Furthermore, if the ITO film is formed by IAD, in addition to the antistatic property, the characteristics relating to the reflectance and the slipperiness can be made extremely good.
- Such optical products can be used for eyeglass lenses, camera lenses, and the like, but are particularly suitable as camera filters such as lens protection filters when paying attention to the ultra-low antireflection function and the like.
- the physical film thickness of the ITO film (transparent conductive film) in Study Example 1 is set to 1 nm
- the physical film thickness of the ITO film in Study Example 2 is set to 2 nm
- the thickness is gradually increased by 1 nm until the Study Example 10 having a film thickness of 10 nm is reached.
- the film thickness of Study Example 11 was 20 nm. All of the various films in the examination examples 1 to 11 are formed by vacuum deposition. Further, except for the fluorine-based resin film and the SiO 2 film, O 2 gas is introduced in an amount such that the degree of vacuum becomes a set value (5.0 ⁇ 10 ⁇ 3 Pascal (Pa)) during vapor deposition.
- the ITO film and the second SiO 2 film with the outermost layer as the first layer are formed by vapor deposition using IAD, that is, they are assisted by ions during vacuum vapor deposition.
- IAD ionized Ar gas
- the acceleration voltage / current is 100 V (volts) ⁇ 600 mA (milliamperes)
- the bias current is 1000 mA.
- O 2 gas is introduced.
- the fluorine-based resin film was formed as follows. That is, a water repellent treatment is performed by vacuum deposition on a substrate with an antireflection film already formed.
- an organic silicon compound (KY-8 manufactured by Shin-Etsu Chemical Co., Ltd.) is used to form a thin film layer.
- the physical film thickness of each of the fluororesin films in the examination examples 1 to 11 is 5 nm, and each film thickness of the SiO 2 film and the ZrO 2 film as a plurality of types of dielectric films is from the viewpoint of antireflection (reduction of reflectance). It was designed.
- an optical product in which a multilayer film having the following configuration was formed on one side of a substrate similar to Study Example 1 was prepared.
- the ITO film had a thickness of 3 nm and was arranged in the seventh layer.
- Each film was formed in the same manner as in Study Example 1 and the like.
- a multilayer film having the following configuration was formed on one side of a substrate similar to Study Example 1 and the like.
- the ITO film had a thickness of 3 nm and was arranged in the innermost layer (9th layer) immediately above the substrate.
- Each film was formed in the same manner as in Study Example 1 and the like.
- the general product is a camera filter (camera lens protection filter), which is expected to have an antireflection function.
- Optical products according to Study Examples 15 to 17 were prepared by forming a multilayer film having the structure shown in Table 1 on one side of a substrate similar to Study Example 1 and the like.
- the numerical value indicates the physical film thickness, and the substrate side is the first layer.
- the layer configurations of Examination Examples 15 to 17 are as follows in order.
- FIG. 1 shows a graph showing the spectral distribution of reflectance according to the examination examples 1 to 11
- FIG. 2 shows a graph showing the spectral distribution of transmittance according to the examination examples 1 to 11
- the amount of absorption is large on the short wavelength side in the vicinity of the visible region, and the amount of absorption exceeding 0.5% is obtained in the examination examples 8 to 11 and the general product at a wavelength of 430 nm.
- the absorption amount is 0.5% or less.
- a study is made from the viewpoint of suppressing the amount of absorption and improving the optical performance with respect to incident light (passing incident light as much as possible).
- a small amount of absorption in the wavelength region of 430 to 680 nm is one index when viewing optical performance.
- the study examples 8 to 11 and the general products are not preferable because of their optical performance of the conventional level.
- the study examples 1 to 7 exhibit good optical performance and are good. Therefore, the study examples 8 to 11 do not belong to the present invention and correspond to comparative examples.
- the ITO film is the third layer (Study Example 2), the fifth layer (Study Example 12), the seventh layer (Study Example 13), or the ninth layer (Study Example). 14)
- the spectral reflectance distribution does not change so much, and in any case, the reflectance is as extremely low as 0.6% in the wavelength region of 400 to 650 nm. Therefore, the optical performance does not change much depending on the arrangement of the ITO film, and by setting the film thickness to 3 nm, excellent optical performance can be achieved in any of the study examples 2 and 12-14.
- Study Examples 3 to 14 In contrast, in Study Examples 3 to 14, even when the surface is rubbed, no charging potential is generated, and the styrene foam powder does not adhere (“ ⁇ ” in Table 2). Therefore, it can be evaluated that Study Examples 3 to 14 have an antistatic function (“ ⁇ ” in Table 2).
- the ITO film which is a conductive transparent film, is provided with a physical film thickness of 1 nm, the antistatic function cannot be exhibited without providing a sufficient volume, whereas in Study Examples 3 to 14, the conductive transparent film is used. Since a certain ITO film is provided with a sufficient thickness, static electricity can be eliminated and an antistatic function can be exhibited.
- Study Example 15 has an ITO film on the seventh layer (outer layer side from the outermost layer to the second layer), while Study Example 17 has an ITO film on the first layer (substrate side from the outermost layer to the eighth layer). Therefore, it can be said that the antistatic function is exhibited regardless of the arrangement of the ITO multilayer film.
- the examination examples 1 and 2 are comparative examples A and B because the antistatic function is insufficient
- the examination examples 8 to 11 are comparative examples C to C because the optical performance is insufficient (absorption amount is large).
- F. Study Example 16 is Comparative Example G because the physical thickness of the ITO film is as thin as 2 nm and the antistatic function is insufficient.
- Examples 3 to 7 are Examples A to E because they have excellent optical performance while having an antistatic function.
- Examples 12 to 14, 15, and 17 are Examples F to H, I, and J, respectively.
- the physical film thickness of the ITO film is 3 to 7 nm as in Examples A to J, both the antistatic function and the optical performance are both excellent regardless of the position in the multilayer film. Can do. Further, in Examples A to J, the film thickness is thin, so that the material and the film formation time are reduced, the film can be formed uniformly, and the degree of freedom in design is high.
- Example 1 As an optical product according to Example 1, a multilayer film shown in the following Table 4 was formed on one side of a substrate similar to that in Study Example 1 and the like.
- the sixth layer is interposed between the fifth layer and the seventh layer.
- a transparent conductive film is inserted as a layer, and an MgF 2 film (eighth layer) is disposed on the outer side of the transparent conductive film, and a fluorine-based resin film (tenth layer / outermost layer) through an SiO 2 film (ninth layer). ) Is arranged.
- the physical film thickness of each layer is as shown in Table 4.
- the dielectric film odd layers including those in contact with the substrate are Al 2 O 3 as an intermediate refractive index material, and TiO 2 as a high refractive material is located between them and outside the transparent conductive film. Note that when the MgF 2 film and the fluorine-based resin film are adjacent to each other, the adhesion is not good, and it is possible to secure the adhesion by inserting a conductor film between them, so that the SiO 2 is between them. A membrane was placed.
- the transparent conductive film is made of ITO and has a physical film thickness of 5.0 nm.
- All the various films are formed by vacuum deposition.
- O 2 gas is introduced in such an amount that the degree of vacuum becomes a set value (5.0 ⁇ 10 ⁇ 3 Pa) during vapor deposition.
- the deposition rate (rate) of the MgF 2 film is controlled by maintaining the current at a set value.
- the fluororesin film was formed as follows. That is, a water repellent treatment is performed by vacuum deposition on a substrate with an antireflection film already formed. As the water repellent, an organic silicon compound (KY-8 manufactured by Shin-Etsu Chemical Co., Ltd.) is used to form a thin film layer.
- Example 2 The optical product according to Example 2 is the same as Example 1, but as shown in Table 4, the position of the ITO film is the seventh layer and the position of the TiO 2 film is the sixth layer, A film was prepared by finely adjusting the thickness of the dielectric film without changing the thickness of the SiO 2 film and the fluorine resin film.
- the ITO film is assisted by ions during vacuum deposition. That is, the ITO film is formed by IAD.
- ionized Ar gas is used, the acceleration voltage / current is 100 V ⁇ 600 mA, and the bias current is 1000 mA.
- O 2 gas is introduced.
- Examples 3 to 7 As shown in Table 4, optical products according to Examples 3 to 7 are the same as those in Example 1, except that the position of the ITO film is changed and the film thickness of the dielectric film or MgF 2 film is finely adjusted. It was created.
- the ITO film of Example 3 is the fifth layer
- the ITO film of Example 4 is the fourth layer
- the ITO film of Example 5 is the third layer
- the ITO film of Example 6 is the second layer.
- the ITO film of Example 7 is the first layer (directly above the substrate).
- Example 8 Acceleration voltage 700V, acceleration current 900 mA, bias current 1000 mA
- Example 9 Acceleration voltage 300 V, acceleration current 600 mA, bias current 1000 mA
- Comparative Example 1 As an optical product according to Comparative Example 1, a multilayer film shown in the following Table 5 was formed on one side of the same substrate as in Example 1. The configuration of Comparative Example 1 is obtained by removing the ITO film from Example 1 and finely adjusting the film thickness of the dielectric film and the MgF 2 film.
- Comparative Examples 2 and 3 As shown in Table 5, the optical product according to Comparative Example 2 was the same as that of Example 2, but an optical product that was not ion-assisted during the deposition of the ITO film was prepared. Further, as shown in Table 5, an optical product according to Comparative Example 3 was manufactured in the same manner as Comparative Example 2, except that the thickness of ITO was 30 nm instead of 5 nm.
- Examples 1 and 2 and Comparative Examples 1 to 3 the amount of absorption / scattering of incident light was determined as follows. That is, the transmittance and reflectance were measured by a spectrophotometer (U4100 manufactured by Hitachi, Ltd.), and the amount of absorption / scattering was calculated therefrom.
- FIG. 5 shows a graph representing the spectral distribution of absorption / scattering amounts
- FIG. 6 shows a graph representing the spectral distribution of transmittance.
- single-sided reflectance was measured with a spectrophotometer (USPM-RUIII manufactured by Olympus Corporation).
- Example 7 shows a graph representing the spectral distribution of single-sided reflectance.
- haze values HZE
- NDH5000 manufactured by Nippon Denshoku Co., Ltd.
- Table 6 the T.V. T represents the total light transmittance; T indicates parallel transmittance, and DIF indicates diffuse transmittance.
- antistatic properties of Examples 1 to 9 and Comparative Examples 1 and 2 were examined as follows.
- the haze value (HAZE) is as low as 0.09 to 0.10 in Examples 1 and 2, whereas in Comparative Examples 2 and 3, it is relatively as 1.57 to 6.47. 2 shows a high numerical value, confirming the occurrence of scattering in Comparative Examples 2 and 3.
- Examples 1 and 2 show the same absorption, scattering, transmittance, and haze values as Comparative Example 1 without the ITO film. From FIGS.
- Examples 1 and 2 (and Comparative Example 1) have a one-side reflectance of 0.2% or less in the wavelength region of 410 to 680 nm by using an MgF 2 film having a low refractive index. It can be seen that this is an ultra-low antireflection film exhibiting an extremely low reflectance.
- Comparative Example 1 a charging potential of 0.7 kV is recorded immediately after rubbing, and about 0.5 kV remains even after 1 minute. Further, the polystyrene foam powder adheres ("X" in Table 7). Therefore, it can be evaluated that Comparative Example 1 does not have antistatic performance (“x” in Table 7). On the other hand, in Examples 1 to 9 (and Comparative Examples 2 and 3), no charging potential is generated even when the surface is rubbed, and the foamed polystyrene powder does not adhere (“ ⁇ ” in Table 7). Therefore, Examples 1 to 9 (and Comparative Examples 2 and 3) can be evaluated as having an antistatic function (“ ⁇ ” in Table 7).
- Comparative Example 1 does not include an ITO film that is a conductive transparent film, the antistatic function cannot be exhibited.
- Examples 1 to 9 (and Comparative Examples 2 and 3) include an ITO film that is a conductive transparent film. Can be eliminated and the antistatic function can be exhibited.
- Examples 1 to 7 although the positions of the ITO films are different from each other, the antistatic function remains unchanged.
- Examples 2, 8, and 9, where the ITO film is adjacent to the MgF 2 film the IAD conditions are different from each other, but the antistatic function remains unchanged.
- the position of the ITO film and the IAD conditions are not limited, and considering the above viewpoint of preventing scattering, the ITO film is not adjacent to the MgF 2 film, or is formed by IAD. To make them adjacent.
- the optical performance of Examples 3 to 9 was the same as that of Examples 1 and 2. Further, it may be formed by IAD the ITO film when not adjacent to the MgF 2 film.
- Example 10 As an optical product according to Example 10, the optical product is the same as that of Example 1, but as shown below, the position of the ITO film is the fifth layer, and Al 2 O 3 , ZrO 2 , MgF 2 , SiO 2 , And what also used the fluorine-type resin was created. (Substrate /) Al 2 O 3 film / ZrO 2 film / MgF 2 film / ZrO 2 film / ITO film (3 nm) / SiO 2 film / MgF 2 film / SiO 2 film / fluorine resin film (antifouling film)
- Example 11 As an optical product according to Example 11, the optical product is the same as that in Example 1. As shown below, the position of the ITO film is the second layer, and SiO 2 , La 2 Ti 2 O 7 (lanthanum titanate, Canon). Optron's OH14), Al 2 O 3 , ZrO 2 , MgF 2 , and fluororesin were also used. (Substrate /) SiO 2 film / ITO film (3 nm) / SiO 2 film / La 2 Ti 2 O 7 film / MgF 2 film / La 2 Ti 2 O 7 film / MgF 2 film / SiO 2 film / fluorine resin film
- Example 12 As an optical product according to Example 12, the same optical product as in Example 10 was prepared, but the sixth layer was made of ZrO 2 as shown below. (Substrate /) Al 2 O 3 film / ZrO 2 film / MgF 2 film / ZrO 2 film / ITO film (3 nm) / ZrO 2 film / MgF 2 film / SiO 2 film / fluorine resin film
- Example 13 The optical product according to Example 13 was the same as that of Example 12, but an ITO film prepared by IAD was prepared as shown below. (Substrate /) Al 2 O 3 film / ZrO 2 film / MgF 2 film / ZrO 2 film / ITO film (3 nm, IAD) / ZrO 2 film / MgF 2 film / SiO 2 film / fluorine resin film
- Example 13 the reflectance spectral distribution is measured and the CIE is measured.
- FIG. 10 shows a graph relating to the reflectance spectral distribution
- FIG. 11 shows the chromaticity diagram.
- Table 8 below shows the results of various evaluations on the same thing as Example 3 (corresponding to Example 3) and Examples 10 to 13.
- the multilayer film is formed as shown in FIG. 8 and FIG.
- A- unevenness
- the slipperiness of the surface provided with the multilayer film is such that the ITO film, the Al 2 O 3 film, the TiO 2 film, and the MgF 2 film (especially the ITO film and the MgF 2 film) do not have the ITO film or the MgF 2 film.
- the film was slightly inferior (A-).
- slipperiness it is considered that the ITO film, the MgF 2 film, and the like are relatively difficult to form a thin film with extremely low surface roughness.
- evaluation of slipperiness was performed by investigating the resistance (hook) when the surface was wiped with a waste cloth and collecting opinions by a plurality of persons skilled in the art.
- Example 10 by sandwiching the MgF 2 film between the SiO 2 films, the surface roughness of the MgF 2 film can be absorbed by the SiO 2 film that can be formed with an extremely smooth surface, and slipping is caused.
- the properties are very good (A ++).
- unevenness and color tone satisfy high requirements (same as or better than extremely smooth material without ITO film or MgF 2 film, A ++).
- the reflectance is good but slightly lower than the high required level (A).
- Example 11 for the purpose of improving the characteristics relating to the reflectance, lanthanum titanate is used as the high refractive material, and in order to improve the slipperiness while maintaining the characteristics relating to the reflectance, the SiO 2 layer is formed on the layer above the ITO film. The membrane was placed and the lower layer was lanthanum titanate. As a result, the reflectivity satisfies a high level, there is no unevenness, and the color tone is in a good state, and the characteristics relating to the reflectivity are extremely good. It did not satisfy (A-).
- Example 12 the sixth layer (layer on the ITO film) of Example 10 was replaced with a ZrO 2 film for the purpose of highly achieving both the characteristics relating to reflectance and the slipperiness. As a result, the properties relating to the reflectance were extremely good, but the slipperiness was good, but was slightly inferior to that of Example 11 (A-).
- Example 13 IAD was applied to the ITO film of Example 12 for the purpose of achieving a high balance between characteristics relating to reflectance and slipperiness. As a result, the characteristics relating to the reflectance were extremely good and the slipperiness was extremely good (see FIGS. 10 and 11).
- a ZrO 2 film is included from the viewpoint of achieving both the characteristics relating to reflectance and slipperiness while providing antistatic properties. It is considered that the ZrO 2 film absorbs the surface roughness of the ITO film or the MgF 2 film while maintaining the characteristics relating to the reflectance well. Therefore, preferably, if the dielectric film on the surface side of the ITO film contains ZrO 2 film, further, more preferably if the surface side of the ZrO 2 film is adjacent to the ITO film (immediately above the ITO film), ZrO 2 It is even more preferable if the film is directly above the ITO film and on the side of the substrate adjacent to the ITO film (just below the ITO film). Further, if the ITO film is formed by IAD, in addition to the antistatic property, the characteristics relating to reflectance and slipperiness can be made extremely good.
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Abstract
Description
かようにITOの光学膜厚が有ると、帯電防止性能は極めて良好となるものの、材料や成膜時間を多く要してコスト高の原因となるし、他に反射防止機能等を付与しようとして多層膜に組み入れる場合の設計に自由度が少なくなる。又、成膜時に均一でない部分の発生する可能性が比較的に大きくなったり、ITOにおける通過光の一部を吸収する特性により入射光の吸収量が増加したりする等、光学性能に影響を生じる可能性も比較的に大きくなってしまう。
そこで、請求項1,12に記載の発明は、帯電防止機能を具備させながら、低コストで、設計がし易く、光学性能が極めて良好である光学製品、あるいはその製造方法を提供することを目的としたものである。
又、3~4層構成となっており、更に反射率を低減する余地があるものとなっていた。
更に、最外層のMgF2が保護されず、耐久性を向上する余地があるものとなっていた。
そこで、請求項5,7に記載の発明は、ITOとMgF2が用いられることで帯電防止機能と超低反射防止機能を併有させながら、透過光に対する光学性能も良好である光学製品を提供することを目的としたものであり、請求項13に記載の発明は、かような光学製品を製造する方法を提供することを目的としたものである。
そこで、請求項2~4に記載の発明は、帯電防止機能と超低反射防止機能を併有させ、透過光に対する光学性能を良好にし、更に滑り性も良好である光学製品を提供することを目的としたものである。
上記目的を達成するために、請求項2に記載の発明は、上記発明において、前記ITO膜より表面側の前記誘電体膜に、ZrO2膜が含まれていることを特徴とするものである。
上記目的を達成するために、請求項3に記載の発明は、上記発明において、前記ZrO2膜は、前記ITO膜の直上に配置されていることを特徴とするものである。
上記目的を達成するために、請求項4に記載の発明は、上記発明において、前記ZrO2膜は、前記ITO膜の直上及び直下に配置されていることを特徴とするものである。
上記目的を達成するために、請求項5に記載の発明は、上記発明において、前記誘電体膜には、MgF2膜が含まれており、前記ITO膜とMgF2膜が隣接しないように配置されていることを特徴とするものである。
請求項6に記載の発明は、上記発明において、前記多層膜の最外層を第1層として、第2層又は第3層に前記MgF2膜が配置されていることを特徴とするものである。
上記目的を達成するために、請求項7に記載の発明は、上記発明において、前記ITO膜が、プラズマ処理を伴う蒸着により成膜されたものであることを特徴とするものである。
請求項8に記載の発明は、上記発明において、前記多層膜の最外層にフッ素系樹脂膜又はSiO2膜が配置されていることを特徴とするものである。
請求項9に記載の発明は、上記発明において、前記多層膜の最外層のSiO2膜が、プラズマ処理を伴う蒸着により成膜されたものである。
請求項10に記載の発明は、上記発明において、前記フッ素系樹脂膜の物理膜厚が10nm以下であることを特徴とするものである。
請求項11に記載の発明は、上記発明において、前記誘電体膜は、高屈折材料と中間屈折材料を含んで複数形成されており、前記多層膜において、前記高屈折材料と前記中間屈折材料が交互に配置されていることを特徴とするものである。
上記目的を達成するために、請求項12に記載の発明は、上記の光学製品を製造する方法であって、前記ITO膜を、プラズマ処理を伴う蒸着により成膜することを特徴とするものである。
請求項13に記載の発明は、上記発明において、最外層をSiO2膜とし、当該膜を、プラズマ処理を伴う蒸着により成膜することを特徴とするものである。
請求項2~4に記載の発明によれば、帯電防止機能と超低反射防止機能を併有させながら良好な光学性能を具備させ、更に良好な滑り性を保持させることができる。
請求項5,7に記載の発明によれば、帯電防止機能と超低反射防止機能を併有しながら良好な光学性能を具備させることが可能となる。
請求項8,9,13に記載の発明によれば、更に耐久性を向上することが可能となり、フッ素系樹脂膜を用いれば、撥水機能も具備させることができる。
請求項10に記載の発明によれば、フッ素系樹脂膜を均一にすることで撥水機能を付与しながら光学性能を維持することができる。
請求項6,11に記載の発明によれば、更に低い反射率を容易に実現可能となる。
透明とは、透光性を有する意であり、半透明を含むものである。
又、好ましくは、少なくとも何れかの膜は蒸着により形成され、この場合には、コバ面に各種の膜が形成されることで光学製品の光学特性に影響を与えてしまう事態を防止することができる。
ここで、反射率を1パーセント(%)程度以下とし、更に好ましくは0.5%程度以下とするような、低い反射率となる反射防止機能を付与するため、複数種類の誘電体膜が交互に配置され、好ましくは高屈折材料と中間屈折材料が交互に積層される。
又、好ましくはMgF2膜はなるべく最外層近くに1層配置する。そして、MgF2膜と基材の間に、複数種類の誘電体膜が交互に配置され、好ましくは高屈折材料と中間屈折材料が交互に積層される。
誘電体膜の具体例として、二酸化チタン(TiO2),五酸化二タンタル(Ta2O5),二酸化ジルコニウム(ZrO2),三酸化二アルミニウム(Al2O3),五酸化二ニオブ(Nb2O5),二酸化シリコン(SiO2)等の金属酸化物が挙げられる。
又、透明導電膜は、ITOである。
最外層にフッ素系樹脂膜を用いれば、内膜を保護することができるし、撥水性能も付与することができ、水滴や汚れが付着しても容易に除去可能である等、取扱いが更にし易くなる。
フッ素系樹脂は、成膜により撥水性を呈するものであれば良く、適宜市販のものを用いることができる。
尚、フッ素系樹脂膜(撥水膜)の物理膜厚は、均一性を持たせて光学性能や撥水性能を良好にする観点から、好適には10ナノメートル(nm)以下とする。
又、最外層にSiO2膜を用いれば、やはり内膜を保護することができるし、SiO2膜をイオンアシスト蒸着(Ion Assisted Deposition,IAD)等のプラズマ処理を伴う蒸着により成膜すると、膜の強度を増すことで耐久性を更に向上することができる。
又、透明導電膜の物理膜厚は、多層膜へ入射して通過しようとする光の吸収量の充分な低減や、透明導電膜の均一性の確保の観点(入射光に対する優れた光学性能を具備させる観点)から、7nm以下とされる。透明導電膜の物理膜厚が7nmを超えると、光学製品、殊にカメラフィルタにおいて、入射光をなるべくそのまま透過させる観点からすると吸収量が大き過ぎることとなり、好ましくないこととなる。
更に、透明導電膜がIAD等のプラズマ処理を伴って蒸着されると、その成膜をより安定して行えて、一層光学性能を良好にすることができる。
MgF2膜と透明導電膜が離されることで、これらの接触を避け、接触による相互作用の発現、即ち白濁や散乱の発生を回避することができる。
以上を総合すると、例えば、MgF2膜が第1層(第1層をMgF2膜と密着し難い保護膜とした場合には第3層)に配置され、透明導電膜が第3層(第5層)以下に配置される。
又、透明導電膜がIAD等のプラズマ処理を伴って蒸着されると、MgF2膜と隣接したとしても白濁や散乱といった相互作用の発生は認められず、MgF2膜と透明導電膜が離されたものと同様に、超低反射防止機能と帯電防止機能を併有し、且つ散乱が殆どなく光学性能が良好である光学製品とすることができる。
尚、低屈折率であるMgF2膜を外層側に配置するほど低反射にし易いが、MgF2膜を保護するために最外層に保護膜が必要であることに鑑み、MgF2膜を第2層とすることが好ましく、又保護膜とMgF2膜の密着性の確保を要する等の際にバインダー層をこれらの間に挿入する場合には、バインダー層が第2層となるためMgF2膜を第3層とすることが好ましい。
更に、ITO膜についてIADにより成膜すれば、帯電防止性に加え、反射率に関する特性と滑り性についても、極めて良好な状態とすることができる。
検討例1~11に係る光学製品として、直径70ミリメートル(mm)で厚さ1.8mmの白板ガラス製のフラットな基板の片面に対し、次に示す構成の多層膜を成膜したものを作成した。ITO膜は第3層に配置した。
(基板/)SiO2膜/ZrO2膜/SiO2膜/ZrO2膜/SiO2膜/ZrO2膜/ITO膜(IAD)/SiO2膜(IAD)/フッ素系樹脂膜
検討例1~11における各種の膜は、全て真空蒸着法により成膜する。又、フッ素系樹脂膜とSiO2膜を除き、蒸着時、O2ガスを、真空度が設定値(5.0×10-3パスカル(Pa))となるような量だけ導入する。
特にITO膜、及び最外層を第1層として第2層のSiO2膜は、IADを用いた蒸着により成膜し、即ち真空蒸着時にイオンによるアシストを行うようにする。尚、ここではイオン化したArガスを用い、加速電圧・電流は100V(ボルト)・600mA(ミリアンペア)であり、バイアス電流は1000mAである。又、併せてO2ガスを導入する。
又、フッ素系樹脂膜は、次のように成膜した。即ち、既に形成された反射防止膜が付いている基板上に対し、真空蒸着法により撥水処理をする。撥水剤として、有機ケイ素化合物(信越化学工業株式会社製KY-8)を使用し、薄膜層を形成する。
検討例1~11のフッ素系樹脂膜の物理膜厚は5nmとし、複数種類の誘電体膜としてのSiO2膜やZrO2膜の各膜厚は、反射防止(反射率の低減)の観点から設計されたものとした。
検討例12に係る光学製品として、検討例1等と同様の基板の片面に、次に示す構成の多層膜を成膜したものを作成した。ITO膜は膜厚3nmとし、第5層に配置した。各膜は検討例1等と同様に成膜した。
(基板/)SiO2膜/ZrO2膜/SiO2膜/ZrO2膜/ITO膜(IAD)/SiO2膜/ZrO2膜/SiO2膜(IAD)/フッ素系樹脂膜
(基板/)SiO2膜/ZrO2膜/ITO膜(IAD)/SiO2膜/ZrO2膜/SiO2膜/ZrO2膜/SiO2膜(IAD)/フッ素系樹脂膜
(基板/)ITO膜(IAD)/SiO2膜/ZrO2膜/SiO2膜/ZrO2膜/SiO2膜/ZrO2膜/SiO2膜(IAD)/フッ素系樹脂膜
検討例15~17に係る光学製品として、検討例1等と同様の基板の片面に、次の表1に示す構成の多層膜を成膜したものを作成した。尚、表中、数値は物理膜厚を示し、基板側を1層目とする。
検討例15~17の層構成は、順に以下の通りである。
(基板/)SiO2膜/ZrO2膜/SiO2膜/ZrO2膜/SiO2膜/ZrO2膜/ITO膜(3nm,IAD)/SiO2膜
(基板/)SiO2膜/ZrO2膜/SiO2膜/ZrO2膜/SiO2膜/ZrO2膜/ITO膜(2nm,IAD)/SiO2膜
(基板/)ITO膜(3nm,IAD)/SiO2膜/ZrO2膜/SiO2膜/ZrO2膜/SiO2膜/ZrO2膜/SiO2膜
検討例1~11及び一般品について、次のようにして入射光の吸収・散乱量を求めた。即ち、分光光度計(株式会社日立製作所製U4100)によって透過率と反射率を測定し、これらから吸収・散乱量を算出した。吸収・散乱量(%)は、「100-(透過率+反射率)」により算出した。図1に検討例1~11に係る反射率の分光分布を表すグラフを示し、図2に検討例1~11に係る透過率の分光分布を表すグラフを示し、図3に検討例1~11及び一般品に係る吸収・散乱量の分光分布を表すグラフを示す。
又、ITO膜厚が3nmである検討例3,12~14について、ITO膜の配置による分光透過率分布の異同を調べた。分光透過率分布の測定は、上記と同様に分光光度計を用いて行った。この結果を図4に示す。
特に図3に示されるように、可視領域付近では短波長側で吸収量が多く、430nmの波長において、検討例8~11及び一般品では0.5%を超えた吸収量となる。これに対し、検討例1~7では、吸収量が0.5%以下となる。
ここで、吸収量を抑制して入射光に対する光学性能を良好にする(入射光をなるべくそのまま通す)観点から検討する。尚、光学製品、殊にカメラフィルタにおいては、430~680nmの波長領域において吸収量が少ないことが、光学性能をみる際の一つの指標になる。
すると、検討例8~11及び一般品は、従来程度の光学性能となって好ましくないこととなる。一方、検討例1~7は、高い光学性能を呈して良好となる。
従って、検討例8~11は、それぞれ本発明に属さず、比較例に該当することとなる。
表2に示されるように、検討例1では、摩擦により帯電電位が発生し、即ち擦った直後に0.5kVの帯電電位を記録し、1分経過後も0.2kV程度残存している。又、検討例1では、発泡スチロール粉が付着する(表2中「×」)。加えて、検討例2においても、検討例1と同様、摩擦による帯電電位や発泡スチロール粉の付着が認められる。従って、検討例1,2は、帯電防止性能を備えないものと評価でき(表2中「×」)、比較例に該当するものと評価できる。
これに対し、検討例3~14では、表面を擦っても帯電電位は発生せず、発泡スチロール粉は付着しない(表2中「○」)。よって、検討例3~14は、帯電防止機能を有すると評価できる(表2中「○」)。
検討例1,2は導電透明膜であるITO膜を物理膜厚1,2nmにて備えるため、充分なボリュームを備えずに帯電防止機能を発揮できない一方、検討例3~14では導電透明膜であるITO膜を充分な膜厚にて備えるため、静電気を解消可能であり帯電防止機能を発揮できるものである。
すると、表3に示されるように、物理膜厚が2nmである検討例16で、摩擦による帯電電位が発生し(直後で0.7kV,60秒後でも0.3kV)、又発泡スチロールが付着して、帯電防止性能を有しないこととなる。
一方、物理膜厚が3nmである検討例15,17で、摩擦による帯電電位や付着は認められず、帯電防止機能を有している。検討例15は第7層(最外層から2層目の外層側)にITO膜を有している一方、検討例17は第1層(最外層から8層目の基板側)にITO膜を配置していることから、ITOの多層膜における配置によらず帯電防止機能を発揮するものといえる。
即ち、検討例1,2は帯電防止機能が不十分であることから比較例A,Bとなり、検討例8~11は光学性能が不十分である(吸収量が多い)ことから比較例C~Fとなる。
又、検討例16はITO膜の物理膜厚が2nmと薄く、帯電防止機能が不十分であることから比較例Gとなる。
一方、検討例3~7は帯電防止機能を備えながら優れた光学性能を有することから、実施例A~Eとなる。又、同様に検討例12~14,15,17は実施例F~H,I,Jとなる。
換言すれば、実施例A~JのようにITO膜の物理膜厚が3~7nmであると、多層膜における位置にかかわらず、帯電防止機能と光学性能を双方とも優れた状態で両立することができる。
又、実施例A~Jでは膜厚が薄く、よって材料や成膜時間が少なくて済み、均一に成膜することができるし、設計の自由度も高いものとなる。
実施例1に係る光学製品として、検討例1等と同様の基板の片面に対し、次の表4に示す多層膜を成膜したものを作成した。
誘電体膜は、基板に接するものを含む奇数層が中間屈折率材料としてのAl2O3で、その間や透明導電膜の外側に位置するものが高屈折材料としてのTiO2である。尚、MgF2膜とフッ素系樹脂膜が隣接すると密着性が良好でなく、これらの間に導電体膜を挿入すれば密着性を確保可能であることを考慮して、これらの間にSiO2膜を配置した。
又、透明導電膜は、ITOであり、物理膜厚が5.0nmとされている。
MgF2膜の成膜速度(レート)は、電流が設定値に保たれるようにすることで制御される。
フッ素系樹脂膜は、次のように成膜した。即ち、既に形成された反射防止膜が付いている基板上に対し、真空蒸着法により撥水処理をする。撥水剤として、有機ケイ素化合物(信越化学工業株式会社製KY-8)を使用し、薄膜層を形成する。
実施例2に係る光学製品として、実施例1と同様であるが、表4に示すように、ITO膜の位置を第7層としてTiO2膜の位置を第6層とすると共に、ITO膜やSiO2膜、フッ素系樹脂膜の膜厚を変えず誘電体膜の膜厚を微調整したものを作成した。
ここで、ITO膜は、真空蒸着時、イオンによるアシストを行うようにする。即ち、ITO膜は、IADにより成膜される。尚、ここではイオン化したArガスを用い、加速電圧・電流は100V・600mAであり、バイアス電流は1000mAである。又、併せてO2ガスを導入する。
実施例3~7に係る光学製品として、表4に示すように、実施例1と同様であるが、ITO膜の位置を異ならせて誘電体膜やMgF2膜の膜厚を微調整したものを作成した。
実施例3のITO膜は第5層であり、実施例4のITO膜は第4層であり、実施例5のITO膜は第3層であり、実施例6のITO膜は第2層であり、実施例7のITO膜は第1層(基板直上)である。
実施例8.9に係る光学製品として、実施例2と膜厚を含め同じ膜構成であるが、IADの条件を次のように変更したものを作成した。
実施例8:加速電圧700V,加速電流900mA,バイアス電流1000mA
実施例9:加速電圧300V,加速電流600mA,バイアス電流1000mA
比較例1に係る光学製品として、実施例1と同様の基板の片面に、次の表5に示す多層膜を成膜したものを作成した。比較例1の構成は、実施例1からITO膜を取り去って誘電体膜やMgF2膜の膜厚を微調整したものである。
比較例2に係る光学製品として、表5に示すように、実施例2と同様であるが、ITO膜の蒸着時にイオンアシストをしないものを作製した。
又、比較例3に係る光学製品として、表5に示すように、比較例2と同様であるが、ITOの膜厚を5nmでなく30nmとしたものを作製した。
実施例1,2及び比較例1~3について、次のようにして入射光の吸収・散乱量を求めた。即ち、分光光度計(株式会社日立製作所製U4100)によって透過率と反射率を測定し、これらから吸収・散乱量を算出した。図5に吸収・散乱量の分光分布を表すグラフを示し、図6に透過率の分光分布を表すグラフを示す。
更に、実施例1,2及び比較例1について、分光光度計(オリンパス株式会社製USPM-RUIII)によって片面反射率を測定した。図7に片面反射率の分光分布を表すグラフを示す。
又、実施例1,2及び比較例1~3について、濁度計(日本電色株式会社製NDH5000)によりヘイズ値(HAZE)を測定した。この結果を下記表6に示す。尚、表6におけるT.Tは全光線透過率を示し、P.Tは平行透過率を示し、DIFは拡散透過率を示す。
加えて、実施例1~9及び比較例1~2について、次のようにして帯電防止性を調べた。即ち、それぞれの表面の帯電電位を静電気測定器(シムコジャパン株式会社製FMX-003)で初期電位として測定した後、当該表面を不織布(小津産業株式会社製 pure leaf)で10秒間擦り、その直後、及び擦り終わってから30,60秒後のそれぞれにおいて、当該表面の帯電電位を測定した。又、付着試験として、同様に表面を不織布で10秒間擦り、その直後に発泡スチロール粉に近づけることで、レンズ表面への発泡スチロール粉の付着具合を観察し、帯電の程度を確認した(発泡スチロール粉の付着が帯電を示す)。これらの結果を下記表7に示す。
実施例1,2では可視領域の全域において吸収・散乱量がほぼ0%であり(図5)、透過率が95%程度で安定している(図6)のに対し、比較例2,3では可視領域の全域において吸収・散乱量が増加し、透過率が減少している。
これは、実施例1においてMgF2膜とITO膜の間にTiO2膜が挿入されており、又実施例2においてMgF2膜と隣接するITO膜をIADにより成膜しているのに対し、比較例2,3においてMgF2膜とIADによらないITO膜が単に隣接していることに起因する。MgF2膜とIADによらないITO膜が隣接すると、これらの相互作用により、微細な粒状部分や白濁部分が発生する。
又、表6に示すように、ヘイズ値(HAZE)は実施例1,2で0.09~0.10と低いのに対し、比較例2,3では1.57~6.47と比較的に高い数値を示しており、比較例2,3における散乱の発生が裏付けられる。
尚、実施例1,2は、ITO膜のない比較例1と同等の吸収・散乱・透過率・ヘイズ値を示している。
そして、図7より、実施例1,2(及び比較例1)は、低屈折率であるMgF2膜を用いること等により、410~680nmの波長領域において片面反射率が0.2%以下となる極めて低い反射率を呈する超低反射防止膜となっていることが分かる。
比較例1では、擦った直後に0.7kVの帯電電位を記録し、1分経過後も0.5kV程度残存している。又、発泡スチロール粉は付着する(表7中「×」)。従って、比較例1は帯電防止性能を備えないものと評価できる(表7中「×」)。
これに対し、実施例1~9(及び比較例2,3)では、表面を擦っても帯電電位は発生せず、発泡スチロール粉は付着しない(表7中「○」)。よって、実施例1~9(及び比較例2,3)は、帯電防止機能を有すると評価できる(表7中「○」)。
比較例1は導電透明膜であるITO膜を備えないため、帯電防止機能を発揮できない一方、実施例1~9(及び比較例2,3)は導電透明膜であるITO膜を備えるため、静電気を解消可能であり帯電防止機能を発揮できるものである。
又、実施例1~7は互いにITO膜の位置が異なるものであるが、帯電防止機能は変わらず発揮している。加えて、実施例2,8,9はITO膜がMgF2膜と隣接するものであるところ、互いにIADの条件が相違するものであるが、帯電防止機能は変わらず発揮している。よって、帯電防止機能付与の観点からは、ITO膜の位置やIADの条件は問わないこととなり、上述の散乱防止の観点を加味すると、ITO膜をMgF2膜に隣接させないか、IADにより成膜して隣接させるかすることになる。尚、実施例3~9の光学性能は、実施例1,2と同様であった。又、MgF2膜に隣接させない場合にITO膜をIADにより成膜しても良い。
実施例10に係る光学製品として、実施例1と同様であるが、次に示すように、ITO膜の位置を第5層とすると共に、Al2O3、ZrO2、MgF2、SiO2、及びフッ素系樹脂も用いたものを作成した。
(基板/)Al2O3膜/ZrO2膜/MgF2膜/ZrO2膜/ITO膜(3nm)/SiO2膜/MgF2膜/SiO2膜/フッ素系樹脂膜(防汚膜)
実施例11に係る光学製品として、実施例1と同様であるが、次に示すように、ITO膜の位置を第2層とすると共に、SiO2、La2Ti2O7(ランタンチタネート、キヤノンオプトロン株式会社製OH14)、Al2O3、ZrO2、MgF2、及びフッ素系樹脂も用いたものを作成した。
(基板/)SiO2膜/ITO膜(3nm)/SiO2膜/La2Ti2O7膜/MgF2膜/La2Ti2O7膜/MgF2膜/SiO2膜/フッ素系樹脂膜
実施例12に係る光学製品として、実施例10と同様であるが、次に示すように、第6層をZrO2としたものを作成した。
(基板/)Al2O3膜/ZrO2膜/MgF2膜/ZrO2膜/ITO膜(3nm)/ZrO2膜/MgF2膜/SiO2膜/フッ素系樹脂膜
実施例13に係る光学製品として、実施例12と同様であるが、次に示すように、ITO膜につきIADにより作成したものを作成した。
(基板/)Al2O3膜/ZrO2膜/MgF2膜/ZrO2膜/ITO膜(3nm,IAD)/ZrO2膜/MgF2膜/SiO2膜/フッ素系樹脂膜
実施例3と同様の膜構成であってITOの物理膜厚のみ1,2,3,4,5,15,20,25nmとしたもの(5nmのものが実施例3と同一)をそれぞれ作成し(Al2O3-TiO2系)、それぞれ反射率分光分布を測定すると共に、CIE表色系の色度図(x,y,Y)における色彩を測定した。図8に、その反射率分光分布に関するグラフを示し、図9に、その色度図を示す。
又、実施例13に属しておりITOの物理膜厚を上記Al2O3-TiO2系と同様にしたものについて(ZrO2-MgF2系)、それぞれ反射率分光分布を測定すると共に、CIE表色系の色度図(x,y,Y)における色彩を測定した。図10に、その反射率分光分布に関するグラフを示し、図11に、その色度図を示す。
更に、上述の実施例3と同様のもの(実施例3相当)と、実施例10~13について、各種の評価を行った結果を、次の表8に示す。
尚、帯電防止性、透過率に関しては、上述の実施例1~9等と同様にして評価した。
又、撥水性については、レンズ表面に純水を滴下した場合における純水表面基部がレンズ表面に対しなす角度により評価し、耐キズ性(キズに対する強度)については、所定荒さのヤスリで表面を擦った際のキズの有無ないし程度により評価し、耐候性については、各レンズを60度・95%の環境に合計で1,3,7日間置いた際の変化を観察する恒温恒湿試験(耐候試験)により確認した。
又、ITO膜についてIADにより成膜すれば、帯電防止性に加え、反射率に関する特性と滑り性についても、極めて良好な状態とすることができる。
Claims (13)
- 透明な基材の一方の面あるいは両面に対し、
誘電体膜とITO膜を含む多層膜が形成されており、
前記ITO膜の物理膜厚が、3ナノメートル以上7ナノメートル以下である
ことを特徴とする光学製品。 - 前記ITO膜より表面側の前記誘電体膜に、ZrO2膜が含まれている
ことを特徴とする請求項1に記載の光学製品。 - 前記ZrO2膜は、前記ITO膜の直上に配置されている
ことを特徴とする請求項2に記載の光学製品。 - 前記ZrO2膜は、前記ITO膜の直上及び直下に配置されている
ことを特徴とする請求項2に記載の光学製品。 - 前記誘電体膜には、MgF2膜が含まれており、
前記ITO膜とMgF2膜が隣接しないように配置されている
ことを特徴とする請求項1ないし請求項4の何れかに記載の光学製品。 - 前記多層膜の最外層を第1層として、第2層又は第3層に前記MgF2膜が配置されている
ことを特徴とする請求項5に記載の光学製品。 - 前記ITO膜が、プラズマ処理を伴う蒸着により成膜されたものである
ことを特徴とする請求項1ないし請求項6の何れかに記載の光学製品。 - 前記多層膜の最外層にフッ素系樹脂膜又はSiO2膜が配置されている
ことを特徴とする請求項1ないし請求項7の何れかに記載の光学製品。 - 前記多層膜の最外層のSiO2膜が、プラズマ処理を伴う蒸着により成膜されたものである
ことを特徴とする請求項8に記載の光学製品。 - 前記フッ素系樹脂膜の物理膜厚が10ナノメートル以下である
ことを特徴とする請求項8に記載の光学製品。 - 前記誘電体膜は、高屈折材料と中間屈折材料を含んで複数形成されており、
前記多層膜において、前記高屈折材料と前記中間屈折材料が交互に配置されている
ことを特徴とする請求項1ないし請求項10の何れかに記載の光学製品。 - 請求項1ないし請求項11の何れかに記載の光学製品を製造する方法であって、
前記ITO膜を、プラズマ処理を伴う蒸着により成膜する
ことを特徴とする光学製品の製造方法。 - 最外層をSiO2膜とし、当該膜を、プラズマ処理を伴う蒸着により成膜する
ことを特徴とする請求項12に記載の光学製品の製造方法。
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