WO2013094117A1 - ワークの切断方法 - Google Patents
ワークの切断方法 Download PDFInfo
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- WO2013094117A1 WO2013094117A1 PCT/JP2012/007359 JP2012007359W WO2013094117A1 WO 2013094117 A1 WO2013094117 A1 WO 2013094117A1 JP 2012007359 W JP2012007359 W JP 2012007359W WO 2013094117 A1 WO2013094117 A1 WO 2013094117A1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/06—Grinders for cutting-off
- B24B27/0633—Grinders for cutting-off using a cutting wire
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0064—Devices for the automatic drive or the program control of the machines
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- the present invention relates to a method of cutting a workpiece into a wafer using a wire saw.
- a wire saw has been known as a means for cutting a wafer from a hard and brittle workpiece such as a semiconductor ingot.
- a wire row is formed by winding a large number of wires around a plurality of rollers, the wire is driven at a high speed in the axial direction, and the machining fluid is appropriately supplied to the wire row.
- the workpiece is cut at the wire positions at the same time.
- FIG. 3 shows an outline of a general wire saw. As shown in FIG.
- the wire saw 101 mainly includes a wire 102 for cutting the workpiece W, a grooved roller 103 around which the wire 102 is wound, a wire tension applying mechanism 104 for applying tension to the wire 102, 104 ′, a workpiece feeding means 105 that feeds the workpiece W from the upper side to the lower side of the wire 2, and a machining fluid supply unit 106 that supplies a machining fluid at the time of cutting.
- the wire 102 is fed out from one wire reel 107, and enters the grooved roller 103 via a traverser through a tension applying mechanism 104 including a powder clutch (constant torque motor), a dancer roller (dead weight) (not shown), and the like. ing.
- a wire row is formed by winding the wire 102 about the grooved roller 103 about 300 to 400 times.
- the wire 102 is wound around a wire reel 107 ′ through another tension applying mechanism 104 ′.
- the grooved roller 103 is a roller in which a polyurethane resin is press-fitted around a steel cylinder and a plurality of grooves are cut on the surface thereof.
- the wound wire 102 has a predetermined travel distance by a drive motor 110. It can be driven in the reciprocating direction.
- the workpiece feeding means 105 pushes it down while holding the workpiece W, and feeds it in the direction of the wire 102 wound around the grooved roller 103.
- a nozzle 111 is provided in the vicinity of the grooved roller 103 and the wound wire 102 so that the processing liquid whose temperature has been adjusted can be supplied from the processing liquid supply means 106 to the wire 102.
- Patent Document 2 describes a method of supplying a larger amount of machining fluid to a cutting unit by performing an operation of moving a workpiece forward by a predetermined amount L1 and returning it by a return amount L2 during cutting.
- the present invention has been made in view of the above-described problems, and provides a cutting method capable of improving the cutting quality of a workpiece, particularly nanotopography, in cutting the workpiece with a wire saw using a wire to which abrasive grains are fixed. For the purpose.
- a wire with abrasive grains fixed is wound around a plurality of grooved rollers, the wire is reciprocated in the axial direction, and a working fluid is supplied to the wire.
- the workpiece is cut into a wafer shape by pressing the workpiece against the reciprocating wire and cutting and feeding the workpiece, and the workpiece is cut in a feeding direction with a feed amount of 5 mm or more and 30 mm or less.
- the workpiece is retracted in a direction opposite to the cutting and feeding direction by 1/4 or more of the feeding amount and less than the feeding amount and 1/15 or less of the length of the workpiece in the cutting and feeding direction.
- a work cutting method characterized by cutting the work by repeating the step of returning the amount.
- the workpiece in cutting a workpiece with a wire saw using a wire to which abrasive grains are fixed, the workpiece is cut and fed in a feed amount of 5 mm or more and 30 mm or less in the cut feed direction, and then the workpiece is reverse to the cut feed direction.
- the workpiece is cut by repeating the process of returning by a retracting amount that is 1/4 or more of the feed amount and less than the feed amount and 1/15 or less of the length of the workpiece in the cutting feed direction.
- the supply of the machining fluid and the discharge of the chips can be promoted, and the cutting quality of the workpiece, particularly nanotopography and TTV can be improved.
- the present invention is not limited to this.
- the workpiece in cutting a workpiece using a wire saw, in order to sufficiently supply the machining fluid to the workpiece cutting portion, the workpiece is cut and fed at a feed amount L1, and then the workpiece is moved backward by an amount L2 opposite to the cut feed direction.
- the returning method is known, the specific feed amount and retreat amount regulations for improving the cutting quality of the workpiece are not known. Therefore, the present inventor has specifically defined a feed amount and a return amount for greatly improving the workpiece cutting quality, particularly nanotopography quality, and has completed the present invention.
- a wire saw 1 mainly includes a wire 2 for cutting a workpiece W, a grooved roller 3, a wire tension applying mechanism 4, 4 ′ for applying tension to the wire 2, and a wafer shape.
- the workpiece feeding means 5 for cutting and feeding while holding the workpiece W to be cut, the machining fluid supply means 6 for supplying the machining fluid to the wire 2 at the time of cutting, and the like.
- Abrasive grains are fixed to the wire 2 with metal or resin.
- the wire 2 is fed out from one wire reel 7 and enters the grooved roller 3 through a wire tension applying mechanism 4 including a powder clutch (constant torque motor) and a dancer roller (dead weight) through a traverser.
- the grooved roller 3 is a roller in which polyurethane resin is press-fitted around a steel cylinder and grooves are cut at a predetermined pitch on the surface thereof.
- a wire array is formed by winding the wire 2 around the plurality of grooved rollers 3 about 300 to 400 times.
- the wire 2 is wound around a wire reel 7 'through another wire tension applying mechanism 4'.
- the wire 2 wound in this way can be reciprocated by the drive motor 10.
- the machining fluid supply means 6 includes a tank 8, a chiller 9, a nozzle 11, and the like.
- the nozzle 11 is disposed above the wire row formed by winding the wire 2 around the grooved roller 3.
- the nozzle 11 is connected to the tank 8, and the supplied working fluid is supplied to the wire 2 from the nozzle 11 with the supply temperature controlled by the chiller 9.
- the workpiece W is held by the workpiece feeding means 5.
- the workpiece feeding means 5 pushes the workpiece W downward from the upper side of the wire, thereby pressing the workpiece W against the reciprocating wire 2 to cut and feed the workpiece W.
- the workpiece W can be fed in the direction opposite to the cutting and feeding direction. At this time, the reverse amount of the workpiece W can also be controlled.
- the workpiece cutting method of the present invention is a workpiece cutting method in which the workpiece W is cut into a wafer shape using such a wire saw, and the cutting time is greatly increased by using the wire to which the abrasive grains are fixed as described above. Can be shortened.
- the workpiece W is held by the workpiece feeding means 5.
- the wire 2 is reciprocated by applying tension.
- the workpiece feeding unit 5 presses the workpiece W against the reciprocating wire 2 to cut and feed the workpiece W, thereby cutting the workpiece W.
- a cooling liquid such as pure water can be used as the processing liquid.
- FIG. 2 shows an example of the workpiece cutting ratio during workpiece cutting.
- the workpiece cutting ratio indicates the ratio of the distance from the cutting start position to the wire cutting position with respect to the length of the workpiece in the cutting feed direction.
- the upper limit of 30 mm of the feed amount is a value substantially equal to the half cycle of the uneven period of the pseudo nanotopography.
- the pseudo nanotopography value can be improved by entering the backward movement below this upper limit value, that is, by returning the workpiece to the direction opposite to the cutting feed direction.
- the uneven period of the pseudo nanotopography does not depend on the diameter.
- the machining fluid can be sufficiently supplied to the workpiece cutting portion.
- the supplied machining fluid is carried to the workpiece cutting portion by the wire, but a sufficient amount of machining fluid can be supplied by forming a gap between the workpiece cutting portion and the wire by the backward movement of the workpiece.
- the retraction amount needs to be less than the feed amount.
- the feed amount and the reverse amount are specified, and after the workpiece W is cut and fed at the specified feed amount, the process of returning the workpiece W by the specified reverse amount in the direction opposite to the cutting and feeding direction is repeated.
- the machining fluid can be sufficiently supplied to the workpiece cutting part, and the discharge of chips can be promoted. Thereby, nanotopography can be significantly improved while suppressing deterioration of TTV.
- the workpiece feeding means of the wire saw as shown in FIG. 1 is used to cut and feed the workpiece so as to feed the wire from above to below, but the workpiece cutting method of the present invention is limited to this. Instead, the workpiece cutting feed may be performed by relatively pushing down the workpiece. That is, the workpiece W may be cut and fed by pushing the wire row upward rather than sending the workpiece W downward. In this case, the workpiece is moved backward by pushing down the wire row.
- Cutting conditions such as the magnitude of tension applied to the wire 2 and the traveling speed of the wire 2 can be set as appropriate.
- the traveling speed of the wire can be set to 400 to 800 m / min.
- the cutting feed speed when the workpiece is cut and fed can be set to 0.2 to 0.4 mm / min, for example.
- these conditions do not limit the present invention.
- Example 1 Using a wire saw as shown in FIG. 1, a silicon ingot having a diameter of 300 mm and a length of 200 mm was cut into a wafer shape, and the pseudo nanotopography of the wafer after cutting was evaluated.
- As the wire a diamond abrasive grain fixed by electrodeposition was used.
- the cutting conditions are shown in Table 1.
- the workpiece feed rate was 0.5 mm / min in the cutting feed direction, and the retreat rate was 500 mm / min. Then, the workpiece feed amount during cutting was changed to 20, 25, and 30 mm, and the retreat amount was fixed to 9 mm.
- the results of pseudo nanotopography are shown in Table 2.
- the pseudo nanotopography was 0.91, 1.10, and 1.36 ⁇ m, respectively, when the feed amount was 20, 25, and 30 mm.
- Comparative Example 1-3 which will be described later, they were 1.66, 1.74, and 1.82 ⁇ m, respectively, and it was found that the pseudo nanotopography of Example 1 was greatly improved.
- Example 2 The silicon ingot was cut under the same conditions as in Example 1 except that the feed amount was changed to 5, 10, and 15 mm and the retraction amount was fixed at 3.8 mm, and the evaluation was performed in the same manner as in Example 1.
- the results of pseudo nanotopography are shown in Table 2. As shown in Table 2, the pseudo nanotopography was 1.19, 1.10, and 1.02 ⁇ m, respectively, when the feed amount was 5, 10, and 15 mm. On the other hand, in Comparative Example 1-3 described later, they were 1.66, 1.74, and 1.82 ⁇ m, respectively, and it was found that the pseudo nanotopography of Example 2 was greatly improved.
- Example 3 The silicon ingot was cut under the same conditions as in Example 1 except that the feed amount was fixed at 20 mm and the retraction amount was changed to 5, 10, 15, 19 mm, and evaluation was performed in the same manner as in Example 1.
- the results of pseudo nanotopography are shown in Table 2.
- the pseudo nanotopography was 0.91, 0.88, 1.10, and 1.22 ⁇ m, respectively, when the retraction amount was 5, 10, 15, and 19 mm.
- the values were 1.66, 1.74, and 1.82 ⁇ m, respectively, and it was found that the pseudo nanotopography of Example 3 was greatly improved.
- Example 4 The silicon ingot was cut under the same conditions as in Example 1 except that the feed amount was fixed at 30 mm and the retraction amount was changed to 10, 15, and 20 mm, and the TTV deterioration rate of the wafer after cutting was evaluated. The deterioration rate was calculated based on the TTV obtained from the cutting conditions of Comparative Example 3 with no retreat amount. These retraction amounts in Example 4 are values of 1/15 or less of the length of 300 mm in the cutting and feeding direction of the workpiece. The results are shown in Table 3. As shown in Table 3, the deterioration rate of TTV was negligible at 1% or less. On the other hand, in Comparative Example 4, which will be described later, in which the retreat amount exceeds a value of 1/15 or less of the length of 300 mm in the cutting and feeding direction of the workpiece, the deterioration rate of TTV became 3.6%.
- Example 1 The silicon ingot was cut under the same conditions as in Example 1 except that the feed amount was 34 mm and the retraction amount was 7 mm, and evaluation was performed in the same manner as in Example 1.
- the results of pseudo nanotopography are shown in Table 2.
- the pseudo nanotopography was 1.66 ⁇ m, which was significantly worse than the results of Example 1-3.
- the feed amount exceeds 30 mm, the half period of the concavo-convex period of the pseudo nanotopography is exceeded.
- Example 2 The silicon ingot was cut under the same conditions as in Example 1 except that the feed amount was 10 mm and the retraction amount was 1.5 mm, and evaluation was performed in the same manner as in Example 1.
- the results of pseudo nanotopography are shown in Table 2.
- the pseudo nanotopography was 1.74 ⁇ m, which was significantly worse than the result of Example 1-3.
- the retraction amount is less than 1 ⁇ 4 of the feed amount, the effect of promoting the supply of the machining fluid is not obtained, and the value is not so different from the result of Comparative Example 3 cut by a cutting method without a retraction operation described later. Become.
- Example 3 (Comparative Example 3) The workpiece was cut and fed without performing any backward movement, and evaluated in the same manner as in Example 1. Other cutting conditions were the same as in Example 1. The results of pseudo nanotopography are shown in Table 2. As shown in Table 2, the pseudo nanotopography was 1.82 ⁇ m, which was significantly worse than the results of Example 1-3.
- Example 4 A silicon ingot was cut under the same conditions as in Example 4 except that the retraction amount was 25 mm, and evaluation was performed in the same manner as in Example 4. As a result, the deterioration rate of TTV was 3.6%, which was significantly worse than the result of Example 4. In this way, when the retraction amount exceeds 1/15 of the length of the workpiece infeeding direction, the thinning of the wafer occurs due to the recutting of the workpiece in addition to the effect of promoting the supply of the machining fluid, which affects the TTV. End up.
- Table 2 summarizes the conditions and results of the feed amount and the retraction amount in Example 1-3 and Comparative Example 1-3.
- Table 3 summarizes the conditions and results of Example 4 and Comparative Example 4. From the above, it was confirmed that the work cutting method of the present invention can improve the work cutting quality, particularly nanotopography.
- the present invention is not limited to the above embodiment.
- the above-described embodiment is an exemplification, and the present invention has any configuration that has substantially the same configuration as the technical idea described in the claims of the present invention and that exhibits the same effects. Are included in the technical scope.
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Abstract
Description
ここで、図3に、一般的なワイヤソーの概要を示す。
図3に示すように、ワイヤソー101は、主に、ワークWを切断するためのワイヤ102、ワイヤ102を巻掛けした溝付きローラ103、ワイヤ102に張力を付与するためのワイヤ張力付与機構104、104’、ワークWをワイヤ2の上方から下方へと送り出すワーク送り手段105、切断時に加工液を供給する加工液供給手段106で構成されている。
ワークWの切断時には、ワーク送り手段105によって、ワークWを保持しつつ押し下げ、溝付きローラ103に巻掛けされたワイヤ102の方向に送り出す。
溝付きローラ103、巻掛けられたワイヤ102の近傍にはノズル111が設けられており、温度が調整された加工液を加工液供給手段106からワイヤ102に供給できるようになっている。
近年、半導体デバイスに用いられるウェーハにおいて、ナノトポグラフィと呼ばれる表面うねり成分を小さくすることが求められている。切断後のスライスウェーハでは、ナノトポグラフィは静電容量型測定器で測定した擬似的なナノトポグラフィ(以降、疑似ナノトポグラフィと呼ぶ)として評価されることがある(特許文献1参照)。
特許文献2には、切断中にワークを所定量L1だけ前進させ、戻し量L2だけ戻す動作を行うことで加工液を切断部により多く供給する方法が記載されている。
本発明は前述のような問題に鑑みてなされたもので、砥粒が固着されたワイヤを用いたワイヤソーによるワークの切断において、ワークの切断品質、特にナノトポグラフィを改善可能な切断方法を提供することを目的とする。
従来、ワイヤソーを用いたワークの切断において、ワーク切断部に加工液を十分に供給するため、ワークを送り量L1で切り込み送りした後、その切り込み送り方向とは逆方向にワークを後退量L2だけ戻す方法が知られているが、ワークの切断品質を向上するための具体的な送り量及び後退量の規定は知られていない。
そこで、本発明者は、ワークの切断品質、特にナノトポグラフィ品質を大幅に向上するための送り量及び戻し量を具体的に規定し、本発明を完成させた。
図1に示すように、ワイヤソー1は、主に、ワークWを切断するためのワイヤ2、溝付きローラ3、ワイヤ2に張力を付与するためのワイヤ張力付与機構4、4’、ウェーハ状に切断されるワークWを保持しつつ切り込み送りするためのワーク送り手段5、切断時にワイヤ2に加工液を供給するための加工液供給手段6等で構成されている。ワイヤ2には砥粒が金属又は樹脂にて固着されている。
ワイヤ2が複数の溝付きローラ3に300~400回程度巻掛けられることによってワイヤ列が形成される。ワイヤ2はもう一方のワイヤ張力付与機構4’を経てワイヤリール7’に巻き取られている。このように巻掛けられたワイヤ2が駆動用モータ10によって往復走行できるようになっている。
まず、ワーク送り手段5によりワークWを保持する。そして、ワイヤ2に張力を付与して往復走行させる。
次に、加工液供給手段6によりワイヤ2に加工液を供給しつつ、ワーク送り手段5によりワークWを往復走行するワイヤ2に押し当てて切り込み送りさせ、ワークWを切断していく。ここで、加工液として、例えば純水などの冷却液を用いることができる。
図2にワーク切断中のワーク切り込み比の一例を示す。ここで、ワーク切り込み比はワークの切り込み送り方向の長さに対する切断開始位置からワイヤ切り込み位置までの距離の比を示すものである。
送り量が下限値の5mmを下回る場合は、切り込み送りと後退動作の繰り返し回数が増大し、切断時間が増加するので、経済的な観点から現実的ではない。
後退量をワークWの切り込み送り方向の長さの1/15以下とすることで、ワークの後退動作により発生するワークの再切断による影響を十分に抑制でき、TTVの悪化を抑制できる。ここで、ワークが円筒状のインゴットの場合、ワークの切り込み送り方向の長さとはワークの直径のことを表す。
図1に示すようなワイヤソーを用い、直径300mm、長さ200mmのシリコンインゴットをウェーハ状に切断し、切断後のウェーハの疑似ナノトポグラフィを評価した。
ワイヤとして、ダイヤモンド砥粒を電着で固着させたものを用いた。切断条件を表1に示す。また、ワークの送り速度は切り込み送り方向へ0.5mm/min、後退速度は500mm/minとした。そして、切断中のワークの送り量を20、25、30mmと変化させ、後退量を9mmと固定した。
疑似ナノトポグラフィの結果を表2に示す。表2に示すように、疑似ナノトポグラフィは、送り量が20、25、30mmの場合に対し、それぞれ0.91、1.10、1.36μmであった。これに対し、後述する比較例1-3では、それぞれ1.66、1.74、1.82μmであり、実施例1の疑似ナノトポグラフィは大幅に改善されていることが分かった。
送り量を5、10、15mmと変化させ、後退量を3.8mmと固定した条件以外、実施例1と同様の条件でシリコンインゴットを切断し、実施例1と同様に評価した。
疑似ナノトポグラフィの結果を表2に示す。表2に示すように、疑似ナノトポグラフィは、送り量が5、10、15mmの場合に対し、それぞれ1.19、1.10、1.02μmであった。これに対し、後述する比較例1-3では、それぞれ1.66、1.74、1.82μmであり、実施例2の疑似ナノトポグラフィは大幅に改善されていることが分かった。
送り量を20mmと固定し、後退量を5、10、15、19mmと変化させた条件以外、実施例1と同様の条件でシリコンインゴットを切断し、実施例1と同様に評価した。
疑似ナノトポグラフィの結果を表2に示す。表2に示すように、疑似ナノトポグラフィは、後退量が5、10、15、19mmの場合に対し、それぞれ0.91、0.88、1.10、1.22μmであった。これに対し、後述する比較例1-3では、それぞれ1.66、1.74、1.82μmであり、実施例3の疑似ナノトポグラフィは大幅に改善されていることが分かった。
送り量を30mmと固定し、後退量を10、15、20mmと変化させた条件以外、実施例1と同様の条件でシリコンインゴットを切断し、切断後のウェーハのTTVの悪化率を評価した。なお、悪化率の算出は後退量のない比較例3の切断条件から得られたTTVを基準とした。実施例4におけるこれら後退量はワークの切り込み送り方向の長さ300mmの1/15以下の値である。
結果を表3に示す。表3に示すように、TTVの悪化率は1%以下と無視できる程度であった。一方、後退量がワークの切り込み送り方向の長さ300mmの1/15以下の値を超えた、後述する比較例4では、TTVの悪化率が3.6%と悪化が顕在化した。
送り量を34mmとし、後退量を7mmとした条件以外、実施例1と同様の条件でシリコンインゴットを切断し、実施例1と同様に評価した。
疑似ナノトポグラフィの結果を表2に示す。表2に示すように、疑似ナノトポグラフィは1.66μmであり、実施例1-3の結果と比べ大幅に悪化してしまった。このように、送り量が30mmを超えると疑似ナノトポグラフィの凹凸周期の半周期を超えてしまうため、後述する後退動作のない切断方法で切断した比較例3の結果とそれほど変わらない値となる。
送り量を10mmとし、後退量を1.5mmとした条件以外、実施例1と同様の条件でシリコンインゴットを切断し、実施例1と同様に評価した。
疑似ナノトポグラフィの結果を表2に示す。表2に示すように、疑似ナノトポグラフィは1.74μmであり、実施例1-3の結果と比べ大幅に悪化してしまった。このように、後退量が送り量の1/4未満の場合、加工液の供給促進効果が得られず、後述する後退動作のない切断方法で切断した比較例3の結果とそれほど変わらない値となる。
後退動作を一切行わずにワークを切り込み送りして切断し、実施例1と同様に評価した。他の切断条件は実施例1と同様とした。
疑似ナノトポグラフィの結果を表2に示す。表2に示すように、疑似ナノトポグラフィは1.82μmであり、実施例1-3の結果と比べ大幅に悪化してしまった。
後退量を25mmとした条件以外、実施例4と同様の条件でシリコンインゴットを切断し、実施例4と同様に評価した。
その結果、TTVの悪化率が3.6%と実施例4の結果と比べ大幅に悪化してしまった。このように後退量がワークの切り込み送り方向の長さの1/15を超える場合、加工液の供給促進効果の他に、ワークの再切断によるウェーハの薄化が発生し、TTVに影響を与えてしまう。
以上から、本発明のワークの切断方法は、ワークの切断品質、特にナノトポグラフィを改善できることが確認できた。
Claims (1)
- 砥粒が固着されたワイヤを複数の溝付きローラに巻掛けし、前記ワイヤを軸方向に往復走行させ、前記ワイヤに加工液を供給しつつ、前記往復走行するワイヤにワークを押し当てて切り込み送りすることで前記ワークをウェーハ状に切断するワークの切断方法であって、
前記ワークを切り込み送り方向に5mm以上、30mm以下の送り量で切り込み送りした後、前記ワークを前記切り込み送り方向とは逆の方向に、前記送り量の1/4以上、送り量未満で、かつ前記ワークの切り込み送り方向の長さの1/15以下の後退量だけ戻す工程を繰り返して前記ワークを切断することを特徴とするワークの切断方法。
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US14/359,881 US20140318522A1 (en) | 2011-12-22 | 2012-11-16 | Method for slicing workpiece |
KR1020147016761A KR20140106583A (ko) | 2011-12-22 | 2012-11-16 | 워크의 절단방법 |
DE112012004819.9T DE112012004819T5 (de) | 2011-12-22 | 2012-11-16 | Verfahren zum Schneiden eines Werkstücks |
CN201280062581.0A CN103998182A (zh) | 2011-12-22 | 2012-11-16 | 工件的切割方法 |
SG11201402512PA SG11201402512PA (en) | 2011-12-22 | 2012-11-16 | Method for cutting work piece |
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JP2011281991A JP2013129046A (ja) | 2011-12-22 | 2011-12-22 | ワークの切断方法 |
JP2011-281991 | 2011-12-22 |
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JP (1) | JP2013129046A (ja) |
KR (1) | KR20140106583A (ja) |
CN (1) | CN103998182A (ja) |
DE (1) | DE112012004819T5 (ja) |
SG (1) | SG11201402512PA (ja) |
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CN107427986A (zh) * | 2015-05-01 | 2017-12-01 | 信越半导体株式会社 | 线锯装置 |
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JP6235295B2 (ja) * | 2013-10-07 | 2017-11-22 | 株式会社安永 | 固定砥粒ワイヤソー装置及びこれを用いたウエハの製造方法 |
KR101841551B1 (ko) * | 2016-11-23 | 2018-03-23 | 에스케이실트론 주식회사 | 잉곳 가압 장치 및 이를 포함하는 잉곳 절단 장치 |
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JP2020121392A (ja) * | 2019-01-31 | 2020-08-13 | 株式会社タカトリ | ワイヤソー及びワイヤソーの被加工物切断方法 |
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CN112976382B (zh) * | 2021-03-04 | 2022-04-01 | 福州天瑞线锯科技有限公司 | 一种金刚线对脆硬材料的切割方法 |
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JP2013129046A (ja) | 2013-07-04 |
TW201343347A (zh) | 2013-11-01 |
SG11201402512PA (en) | 2014-09-26 |
CN103998182A (zh) | 2014-08-20 |
KR20140106583A (ko) | 2014-09-03 |
DE112012004819T5 (de) | 2014-09-11 |
US20140318522A1 (en) | 2014-10-30 |
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