WO2013061931A1 - Ruban de découpage en dés pour le traitement de semi-conducteurs - Google Patents

Ruban de découpage en dés pour le traitement de semi-conducteurs Download PDF

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Publication number
WO2013061931A1
WO2013061931A1 PCT/JP2012/077252 JP2012077252W WO2013061931A1 WO 2013061931 A1 WO2013061931 A1 WO 2013061931A1 JP 2012077252 W JP2012077252 W JP 2012077252W WO 2013061931 A1 WO2013061931 A1 WO 2013061931A1
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Prior art keywords
adhesive layer
pressure
sensitive adhesive
dicing
tape
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PCT/JP2012/077252
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English (en)
Japanese (ja)
Inventor
阿久津　晃
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古河電気工業株式会社
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Priority to CN201280028334.9A priority Critical patent/CN103620743B/zh
Publication of WO2013061931A1 publication Critical patent/WO2013061931A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C09J133/08—Homopolymers or copolymers of acrylic acid esters
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J4/00—Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
    • C09J4/06—Organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond in combination with a macromolecular compound other than an unsaturated polymer of groups C09J159/00 - C09J187/00
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • C09J7/381—Pressure-sensitive adhesives [PSA] based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C09J7/385—Acrylic polymers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
    • C08F222/10—Esters
    • C08F222/1006—Esters of polyhydric alcohols or polyhydric phenols
    • C08F222/103—Esters of polyhydric alcohols or polyhydric phenols of trialcohols, e.g. trimethylolpropane tri(meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68331—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding of passive members, e.g. die mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer

Definitions

  • the present invention relates to a dicing tape suitable for fixing and holding a wafer when dicing a semiconductor wafer into chips, and more particularly to a dicing tape for semiconductor processing suitable for high-density mounting semiconductor package processing.
  • the wafer level chip size package (WLCSP) is a pre-processed wafer on which polyimide coating, Cu rearrangement wiring formation, Cu post formation, resin sealing, resin polishing, and terminal formation are performed. , And after sequentially performing the package processing, it is manufactured by cutting into individual chips at the end, and is a package of the same level as the chip size.
  • WLCSP encapsulated with resin in this way is generally bonded to a semiconductor processing tape by bonding a semiconductor chip to a glass epoxy substrate or a lead frame, molding it in a package mold resin, and then curing it.
  • the package resin contains a release agent, and the surface thereof has a structure having minute irregularities. Therefore, a flexible adhesive is used for the semiconductor processing tape so that the package can be firmly held and a problem such as scattering of the package during dicing does not occur.
  • the dicing blade cuts up to the tape
  • the tape adhesive layer rolls up and the fine glue balls that have been wound up remain on the side of the package that has been separated into pieces. There is.
  • the package when the package is picked up by the small glue balls remaining on the side surface of the package and then transported, the package may adhere to the tray or the tube and may not be peeled off.
  • a pressure-sensitive adhesive comprising, as a base polymer, a copolymer in which at least one of the monomer components is a (meth) acrylic acid alkyl ester and the alkyl group is an alicyclic hydrocarbon group
  • This dicing tape can be said to be a pressure-sensitive adhesive tape that is extremely excellent in preventing adhesion of side pressure-sensitive adhesive.
  • the thicker the pressure-sensitive adhesive layer the better.
  • adhesive residue may be generated on the side surface of the package, and it is a fact that further improvement is desired.
  • the present invention has been made in view of the problems of the conventional technology as described above, and has an adhesive force to sufficiently hold the wafer and chips from which it has been cut in the process of dicing the semiconductor wafer.
  • a small glue ball adheres to the singulated package after package dicing, it is not attached to a tray or device without carrying out a heat treatment process, and further, when transported through a pipe
  • the present inventors have conducted dicing tape for semiconductor processing having a radiation curable pressure-sensitive adhesive layer having specific adhesive strength and probe tack peak strength before and after irradiation. By using this, sufficient adhesion can be obtained to hold the chip, and even if a small glue ball adheres to the separated package, the package does not stick to the tray or the tube. The present inventors have found that it can be conveyed and have arrived at the present invention.
  • the present invention (1) A semiconductor processing dicing tape used in a step of dicing a semiconductor package, wherein a radiation-curing pressure-sensitive adhesive layer is formed on at least one surface of a base film, and the pressure-sensitive adhesive layer is a base It is composed of a resin composition containing an acrylic polymer as a polymer, the thickness of the pressure-sensitive adhesive layer is 10 to 30 ⁇ m, and the pressure-sensitive adhesive strength of the pressure-sensitive adhesive layer after irradiating SUS304 based on JIS Z0237 is When the 90 ° peel test is performed, the tape tack width is 1.0 to 2.0 N / 25 mm and the pressure-sensitive adhesive layer has a peak intensity of 50 to 50 after probe irradiation after irradiation under atmospheric conditions.
  • the pressure-sensitive adhesive layer has an adhesive strength before irradiation with respect to SUS304 based on JIS Z0237 of 5.0 to 10.0 N / 25 mm tape width when a 90 ° peel test is performed, and the pressure-sensitive adhesive layer. 2.
  • the glass transition temperature of the resin composition is ⁇ 30 to ⁇ 10 ° C.
  • the base polymer in the resin composition contains, as monomer components, methyl acrylate and 2-ethylhexyl acrylate.
  • the polymer composition is composed of a resin composition containing an acrylic polymer containing methyl acrylate and 2-ethylhexyl acrylate as monomer components, and the glass transition temperature of the resin composition is ⁇ 30 to ⁇ 11 ° C.
  • the pressure-sensitive adhesive layer has a thickness of 10 to 30 ⁇ m, and the pressure-sensitive adhesive strength of the pressure-sensitive adhesive layer after irradiating SUS304 based on JIS Z0237 is 1.0 when a 90 ° peel test is performed. 1.9 N / 25 mm tape width, and the peak of the probe tack after irradiation of the pressure-sensitive adhesive layer under atmospheric conditions.
  • the dicing tape for semiconductor processing according to the present invention is formed by forming a radiation curable pressure-sensitive adhesive layer on at least one surface of a base film, and the pressure-sensitive adhesive layer contains a resin containing an acrylic polymer as a base polymer. Since it is comprised from a composition, it is excellent in the contamination reduction to a semiconductor wafer and a package. Further, by setting the thickness of the pressure-sensitive adhesive layer to 10 to 30 ⁇ m, it becomes possible to hold the wafer sufficiently while preventing chipping of the wafer and adhesive residue on the side surface of the package during dicing.
  • the adhesive strength of the pressure-sensitive adhesive layer after irradiation with respect to SUS304 based on JIS Z0237 is 1.0 to 2.0 N / 25 mm tape width when a 90 ° peeling test is performed, It is possible to prevent the peripheral chips from being scattered and the package from being detached from the tape during transport. And since the peak intensity of the probe tack after irradiation of the pressure-sensitive adhesive layer under the atmospheric condition is 50 to 150 mN / mm 2 , even when glue balls are generated on the package, the tray or the tube The package can be prevented from sticking to the surface.
  • the dicing tape 1 for semiconductor processing according to the present invention has a radiation curable pressure-sensitive adhesive layer 5 formed on at least one surface of a base film 3.
  • a radiation curable pressure-sensitive adhesive layer 5 formed on at least one surface of a base film 3.
  • the adhesive force at the time of pick-up is rather than the time of affixing. Since it is necessary to irradiate the pressure-sensitive adhesive layer with radiation in order to lower it, those having sufficient radiation transparency are preferred. Therefore, a plastic film is particularly preferably used.
  • Typical materials include, for example, low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolypropylene, polybutene, polymethylpentene, etc.
  • Polyolefin ethylene-vinyl acetate copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene-butene copolymer, ethylene -Hexene copolymers, polyesters such as polyurethane and polyethylene terephthalate, polyimides, polyether ketones, polystyrenes, polyvinyl chloride, polyvinylidene chloride, fluororesins, silicone resins, cellulosic resins and their bridges Polymer body and the like.
  • the film formation method of the base film 3 can be performed by a conventionally known film formation method. For example, calendar film formation, casting film formation, inflation extrusion, T-die extrusion and the like can be suitably used.
  • the thickness of the base film 3 thus obtained is usually about 10 to 300 ⁇ m, preferably about 30 to 200 ⁇ m.
  • the base film 3 may be either a single layer film or a multilayer film, and may be a blend base material obtained by dry blending two or more of the above resins.
  • a multilayer film can be produced by a conventional film laminating method such as a co-extrusion method or a dry laminating method using the resin or the like.
  • the base film 3 may be used without stretching, and may be subjected to uniaxial or biaxial stretching treatment as necessary.
  • the surface of the base film 3 thus produced can be subjected to conventional physical or chemical treatments such as mat treatment, corona discharge treatment, primer treatment, and crosslinking treatment as necessary.
  • the radiation curable pressure-sensitive adhesive layer 5 in the semiconductor processing dicing tape 1 will be described.
  • the adhesive strength is set to 1.0 to 2.0 N / 25 mm tape width.
  • the adhesive strength is less than 1.0N / 25mm tape width, the package is frequently detached from the tape, and when it is larger than 2.0N / 25mm tape width, the package is peeled off from the tape during pick-up. It was revealed that a pickup failure occurred.
  • the present inventors have further studied the tack peak intensity when radiation irradiation is performed under atmospheric conditions for the radiation curable pressure-sensitive adhesive layer 5 in the dicing tape 1 for semiconductor processing. As a result, it was found that by setting the value to 50 to 150 mN / mm 2 , adhesion of the package to the tray or the pipe can be suppressed even when glue balls are generated in the package. On the other hand, when the tack peak strength exceeds 150 mN / mm 2 , the stickiness of the glue balls is strong, and the package adheres frequently to the tray and the tube. When the tack peak strength is less than 50 mN / mm 2 , When picking up the package, it became clear that peripheral chips were scattered when the pins were pushed up, and the package was easily detached from the tape when temporarily stored or transported after picking up.
  • the package resin has minute unevenness on the surface, but when holding a package with small unevenness, the adhesive layer has sufficient adhesive force, and when holding a package with large unevenness, The layer should have sufficient tack peak intensity.
  • the adhesive strength of the radiation curable pressure-sensitive adhesive layer 5 in the dicing tape 1 for semiconductor processing of the present invention before irradiating SUS304 based on JIS Z0237 is 5.0 to 10.0 N / 25 mm tape width, radiation irradiation.
  • the peak intensity of the previous probe tack is preferably 250 to 750 mN / mm 2 .
  • the package can be held firmly even when processed using various packages, and individualized during dicing.
  • the scattered package can be prevented from being scattered.
  • the adhesive strength / tack strength before radiation irradiation is too low, the package is likely to scatter during dicing, and if it is too high, adhesion to the package will be excessive, causing adhesive residue during peeling or adhesion to the substrate. Interfacial peeling between agents is likely to occur.
  • the pressure-sensitive adhesive layer 5 is composed of a resin composition containing an acrylic polymer as a base polymer. This is because an acrylic polymer is generally excellent in reducing contamination to semiconductor wafers and packages.
  • the adhesive layer 5 in the dicing tape 1 for semiconductor processing of the present invention prevents the scattering of the package during dicing and improves the peelability from the package during pick-up so that the semiconductor component (semiconductor wafer or the like) is covered. Adhesive strength sufficient to prevent peeling of the chip can be obtained when pasted on the adherend, and adhesive strength can be reduced when picking up compared to pasting. That is, as the pressure-sensitive adhesive layer 5, a radiation curable pressure-sensitive adhesive layer that is cured by ultraviolet rays, electron beams, or the like is used.
  • Such a radiation curable pressure-sensitive adhesive layer 5 is composed of a resin composition containing an acrylic polymer as a base polymer, and further has a radiation curable functional group such as a carbon-carbon double bond. is there.
  • a resin composition containing an acrylic polymer is prepared by blending a radiation curable monomer component or oligomer component (hereinafter referred to as a radiation curable component) or a base polymer. Examples thereof include those having an acrylic polymer as a basic skeleton and having a carbon-carbon double bond in the side chain, main chain, or main chain terminal of the polymer.
  • acrylic polymer for example, a polymer of (meth) acrylic acid alkyl ester, or (meth) acrylic acid alkyl ester for the purpose of modifying adhesiveness, cohesive force, heat resistance, etc., if necessary.
  • a copolymer obtained by copolymerizing a copolymerizable monomer is preferably used.
  • (meth) acrylic acid ester means acrylic acid ester and / or methacrylic acid ester, and (meth) in this specification shall have the same meaning.
  • alkyl ester group of the (meth) acrylic acid alkyl ester examples include methyl ester, ethyl ester, butyl ester, 2-ethylhexyl ester, octyl ester, isononyl ester and the like.
  • the adhesive strength and tack peak strength can be controlled by adjusting the chain length of the side chain together with the main chain structure of the base polymer. Therefore, in the semiconductor processing dicing tape 1 of the present invention, the acrylic polymer constituting the base polymer is, for example, a hydroxyalkyl ester of (meth) acrylic acid (for example, hydroxyethyl ester, hydroxybutyl) as a copolymerizable monomer.
  • the acrylic polymer may contain a polyfunctional monomer or the like as a monomer component for copolymerization, if necessary, for crosslinking.
  • a polyfunctional monomer or the like as a monomer component for copolymerization, if necessary, for crosslinking.
  • those containing methyl acrylate and 2-ethylhexyl acrylate are particularly preferable. This is because the homopolymer methyl acrylate, which has a high glass transition temperature, and 2-ethylhexyl acrylate, which has a low glass transition temperature, are copolymerized, making it easy to control the adhesive strength and tack peak strength. This is because it is expected to be.
  • the acrylic polymer can be obtained by polymerizing a single monomer or a mixture of two or more monomers.
  • the polymerization reaction may be performed by any method such as solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization and the like.
  • the pressure-sensitive adhesive layer preferably has a low content of low molecular weight substances from the viewpoint of preventing contamination of a semiconductor wafer or the like. Accordingly, the weight average molecular weight of the acrylic polymer is 200,000 or more, preferably about 200,000 to 3,000,000, and more preferably about 500,000 to 3,000,000.
  • the radiation curable component to be blended together with the resin composition containing the acrylic polymer is a characteristic that facilitates peeling of the dicing tape and the semiconductor during the pickup process.
  • the monomer component and oligomer component include trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, tetraethylene glycol di (meth) acrylate, 1, Esterified product of (meth) acrylic acid and polyhydric alcohol such as 6-hexanediol di (meth) acrylate, neopentylglycol di (meth) acrylate, dipentaerythritol hexa (meth) acrylate; Propeni 3-butenyl cyanurate, tris (2-methacryloxyethyl) isocyanurate or isocyanurate compounds such as isocyanurate.
  • One type of radiation curable component may be
  • the blending amount of the radiation curable component is not particularly limited, but at the time of pickup, that is, after radiation irradiation, the peeling adhesive strength is reduced, and the adhesive strength against SUS304 based on JIS Z0237 is peeled off by 90 °.
  • the tape width of 1.0 to 2.0 N / 25 mm when carried out it is preferably 25 to 150 parts by mass with respect to 100 parts by mass of the acrylic copolymer. If there are too few radiation-curing components, the adhesive strength cannot be reduced sufficiently during pick-up, and if there are too many radiation-curing components, it will cause the package to be detached from the tape, and the peripheral chips will be scattered during the pick-up process. Will occur.
  • a carbon-carbon double bond is introduced into the acrylic polymer.
  • a method of introducing a carbon-carbon double bond into an acrylic polymer a compound having a functional group in the side chain of the polymer and an addition-reactive functional group and a carbon-carbon double bond is added.
  • the compound having a functional group capable of addition reaction on the side chain of the acrylic polymer include glycidyl methacrylate and allyl glycidyl ether when the side chain to be subjected to the addition reaction is a carboxyl group.
  • examples include acrylic acid, and in the case where the side chain targeted for the addition reaction is a hydroxyl group, examples include 2-methacryloyloxyethyl isocyanate. It is done.
  • an appropriate cross-link such as a polyfunctional isocyanate compound, an epoxy compound, a melamine compound, a metal salt compound, a metal chelate compound, an amino resin compound, or a peroxide is used.
  • An agent can be contained as a curing agent.
  • the content of the curing agent in the pressure-sensitive adhesive layer 5 is not particularly limited, but is preferably 0.1 to 10 parts by mass with respect to 100 parts by mass of the base polymer.
  • the radiation-curable pressure-sensitive adhesive used in the present invention may contain conventional additives such as various conventionally known tackifiers, anti-aging agents, fillers, and colorants, if necessary. I can do it.
  • the radiation curable pressure-sensitive adhesive layer 5 as described above may contain a photopolymerization initiator for curing with ultraviolet rays or the like.
  • the photopolymerization initiator include benzoin alkyl ethers such as benzoin methyl ether, benzoin propyl ether, benzoin isopropyl ether, and benzoin isobutyl ether; aromatics such as benzyl, benzoin, benzophenone, and ⁇ -hydroxycyclohexyl phenyl ketones Ketones; aromatic ketals such as benzyldimethyl ketal; thioxanthones such as polyvinylbenzophenone, chlorothioxanthone, dodecylthioxanthone, dimethylthioxanthone, and diethylthioxanthone.
  • the blending amount of the photopolymerization initiator is not particularly limited, however, for example, 0.1 to 10 parts by mass, preferably 0. The amount can
  • the glass transition temperature of the resin composition constituting the pressure-sensitive adhesive layer 5 before irradiation is preferably ⁇ 30 to ⁇ 10 ° C.
  • the glass transition temperature is too low, the cohesive force of the pressure-sensitive adhesive is lowered, and therefore, the pressure-sensitive adhesive layer 5 is likely to be rolled up during dicing of the package, and the glue balls may adhere to the singulated package.
  • the glass transition temperature is too high, the holding power of the wafer in the dicing process may be insufficient, and the wafer yield and package jump may occur, and the product yield may easily deteriorate.
  • the range of such a glass transition temperature is the polymer structure and molecular weight of the base polymer in the resin composition which comprises the adhesive layer 5, the radiation curable component mix
  • the dicing tape 1 for semiconductor processing according to the present invention has a pressure-sensitive adhesive layer formed as described above by directly applying a pressure-sensitive adhesive solution to the surface of the base film 3 and drying and, if necessary, heat-crosslinking. It is obtained.
  • the thickness of the pressure-sensitive adhesive layer 5 in the semiconductor processing dicing tape 1 is preferably 10 to 30 ⁇ m. If the pressure-sensitive adhesive layer 5 is less than 10 ⁇ m, the wafer cannot be held sufficiently during dicing, and if the pressure-sensitive adhesive layer 5 is thicker than 30 ⁇ m, chipping of the wafer and adhesive residue on the package side surface increase.
  • the dicing tape 1 for semiconductor processing of the present invention can be manufactured by attaching a separator 7 to the surface of the pressure-sensitive adhesive layer 5 as necessary. Or after forming the adhesive layer 5 in the separator 7 separately, you may employ
  • the pressure-sensitive adhesive layer 5 may be a single layer or a laminate of two or more layers.
  • the separator 7 is provided as needed for the purpose of protecting the pressure-sensitive adhesive layer, for label processing, or for the purpose of smoothing the pressure-sensitive adhesive.
  • the constituent material of the separator 7 include paper, polyethylene, polypropylene, and a synthetic resin film such as polyethylene terephthalate.
  • the surface of the separator 7 may be subjected to release treatment such as silicone treatment, long-chain alkyl treatment, fluorine treatment, etc., as necessary, in order to enhance the peelability from the pressure-sensitive adhesive layer 5.
  • the ultraviolet-ray prevention process may be performed so that the dicing tape 1 for semiconductor processing may not react with environmental ultraviolet rays as needed.
  • the thickness of the separator 7 is usually about 10 to 200 ⁇ m, preferably about 25 to 100 ⁇ m.
  • the semiconductor processing dicing tape 1 as described above can take an appropriate shape depending on the application, such as a sheet shape or a roll shape. You may use what was cut into a required shape in advance.
  • the dicing tape 1 for semiconductor processing of the present invention is subjected to dicing according to a conventional method after being attached to a semiconductor component which is an object to be cut.
  • the semiconductor component include a silicon semiconductor, a compound semiconductor, a semiconductor package, glass, ceramics, and the like.
  • the dicing tape 1 for semiconductor processing of the present invention is particularly used in a process of dicing a semiconductor package. In the dicing process, generally, the blade is rotated at a high speed to cut the object to be cut into a predetermined size.
  • the pickup process can be provided with an expanding process.
  • the means for radiation irradiation is not particularly limited, and can be performed by, for example, ultraviolet irradiation.
  • the pressure-sensitive adhesive layer constituting the semiconductor processing dicing tape 1 of the present invention preferably has the following characteristics.
  • the pressure-sensitive adhesive layer 5 is composed of a resin composition containing, as a base polymer, an acrylic polymer containing methyl acrylate and 2-ethylhexyl acrylate as monomer components, and the glass transition temperature of the resin composition is ⁇ It is preferably 30 to -11 ° C.
  • the thickness of the pressure-sensitive adhesive layer 5 is preferably 10 to 30 ⁇ m.
  • the adhesive strength of the pressure-sensitive adhesive layer 5 after irradiation with respect to SUS304 based on JIS Z0237 is 1.0 to 1.9 N / 25 mm tape width when a 90 ° peel test is performed.
  • the peak intensity of the probe tack after irradiation with radiation under atmospheric conditions is 54 to 148 mN / mm 2 .
  • the pressure-sensitive adhesive strength of the pressure-sensitive adhesive layer 5 before irradiating SUS304 based on JIS Z0237 is 5.3 to 9.7 N / 25 mm tape width when a 90 ° peeling test is performed.
  • the peak intensity of the probe tack before irradiation is preferably 253 to 723 mN / mm 2 .
  • Base film A linear low density polyethylene having a thickness of 150 ⁇ m was used as the base film. One side of this film was corona treated.
  • Base polymers A to E A base polymer containing an acrylic polymer that is polymerized from methyl acrylate, 2-ethylhexyl acrylate, methacrylic acid, and 2-hydroxyethyl acrylate at the mixing ratio (parts by mass) shown in Table 1 below.
  • Base polymers F to H Polymerization was carried out using methyl acrylate, 2-ethylhexyl acrylate, methacrylic acid, and 2-hydroxyethyl acrylate as raw materials at the mixing ratio (parts by mass) shown in Table 1 below.
  • an acrylic base polymer having a carbon-carbon double bond at the end of the side chain was obtained by addition reaction of 2-methacryloyloxyethyl isocyanate.
  • a radiation curable oligomer average content of 6 carbon-carbon double bonds per molecule obtained by reacting pentaerythritol triacrylate and diisocyanate with 100 parts by
  • Example 2 A dicing tape for semiconductor processing was obtained in the same manner as in Example 1 except that the base polymer in the pressure-sensitive adhesive composition was changed to C.
  • Example 3 A dicing tape for semiconductor processing was obtained in the same manner as in Example 2 except that the blending ratio of the radiation curable oligomer was changed to 25 parts by mass.
  • Example 4 A dicing tape for semiconductor processing was obtained in the same manner as in Example 1 except that the base polymer in the pressure-sensitive adhesive composition was changed to D and the blending ratio of the radiation curable oligomer to 100 parts by mass of D was changed to 100 parts by mass.
  • Example 5 A dicing tape for semiconductor processing was obtained in the same manner as in Example 4 except that the blending ratio of the radiation curable oligomer was changed to 50 parts by mass.
  • Example 6 A dicing tape for semiconductor processing was obtained in the same manner as in Example 4 except that the blending ratio of the radiation curable oligomer was changed to 25 parts by mass.
  • Example 7 2 parts by mass of a polyisocyanate compound (manufactured by Nippon Polyurethane Co., Ltd., trade name Coronate L) as a curing agent, and a photopolymerization initiator (manufactured by Ciba Specialty Chemicals, trade name: Irgacure 651) with respect to 100 parts by mass of the base polymer G
  • the mixture was mixed at a blending ratio of 3 parts by mass to obtain an adhesive composition.
  • the obtained pressure-sensitive adhesive composition was applied to the corona-treated surface of the base film so as to have a thickness of 20 ⁇ m, thereby preparing a dicing tape for semiconductor processing.
  • Example 8 A dicing tape for semiconductor processing was obtained in the same manner as in Example 7 except that the base polymer in the pressure-sensitive adhesive composition was changed to H.
  • Example 9 A dicing tape for semiconductor processing was obtained in the same manner as in Example 7 except that the thickness of the pressure-sensitive adhesive layer was changed to 10 ⁇ m.
  • Example 10 A dicing tape for semiconductor processing was obtained in the same manner as in Example 7 except that the thickness of the pressure-sensitive adhesive layer was changed to 30 ⁇ m.
  • Example 1 A dicing tape for semiconductor processing was obtained in the same manner as in Example 1 except that the base polymer in the pressure-sensitive adhesive composition was A, and the blending ratio of the radiation curable oligomer to 100 parts by mass of A was changed to 100 parts by mass.
  • Example 4 A dicing tape for semiconductor processing was obtained in the same manner as in Example 1 except that the base polymer in the pressure-sensitive adhesive composition was B and the blending ratio of the radiation curable oligomer to 100 parts by mass of B was changed to 100 parts by mass.
  • Example 6 A dicing tape for semiconductor processing was obtained in the same manner as in Example 2 except that the blending ratio of the radiation curable oligomer to 100 parts by mass of the base polymer C was changed to 100 parts by mass.
  • Example 7 A dicing tape for semiconductor processing was obtained in the same manner as in Example 1 except that the base polymer in the pressure-sensitive adhesive composition was changed to E and the blending ratio of the radiation curable oligomer to 100 parts by mass of E was changed to 100 parts by mass.
  • ⁇ Comparative Example 9 2 parts by mass of a polyisocyanate compound (manufactured by Nippon Polyurethane Co., Ltd., trade name Coronate L) as a curing agent, and a photopolymerization initiator (manufactured by Ciba Specialty Chemicals, trade name: Irgacure 651) with respect to 100 parts by mass of the base polymer F
  • the mixture was mixed at a blending ratio of 3 parts by mass to obtain an adhesive composition.
  • the obtained pressure-sensitive adhesive composition was applied to the corona-treated surface of the base film so as to have a thickness of 20 ⁇ m, thereby preparing a dicing tape for semiconductor processing.
  • Example 11 A dicing tape for semiconductor processing was obtained in the same manner as in Example 7 except that the thickness of the pressure-sensitive adhesive layer was changed to 33 ⁇ m.
  • Test 1 Adhesive strength measurement (before irradiation)
  • Three test pieces each having a width of 25 mm and a length of 300 mm were taken from each semiconductor processing dicing tape, and finished with 280 No. 280 water-resistant abrasive paper specified in JIS R 6253, and the thickness specified in JIS G 4305 was 1.5 mm.
  • the adhesive strength was measured using a tensile tester. The measurement was performed by a 90 ° peeling method, and the tensile speed at this time was 50 mm / min.
  • the measurement temperature was 23 ° C. and the measurement humidity was 49%.
  • Test 2 Measurement of adhesive strength (after irradiation)
  • a sample prepared in the same manner as in Test 1 was irradiated with ultraviolet rays at 200 mJ / cm 2 , left for 1 hour after irradiation, and the adhesive strength was measured in the same manner as in Test 1.
  • Test 3 Tack peak intensity measurement (before irradiation)
  • Three test pieces each having a width of 25 mm and a length of 300 mm were taken from each semiconductor processing dicing tape, and the peak strength of the probe tack of the adhesive layer on the adherend side was determined by the Reska Co., Ltd.
  • Tacking Tester, TAC- Measurement was made using type II. The measurement conditions are as follows.
  • Test 4 Tack peak intensity (after irradiation and in air)]
  • a sample prepared in the same manner as in test 3 was irradiated with 200 mJ / cm 2 of ultraviolet light in a high-pressure mercury lamp in an air atmosphere and left for 1 hour after irradiation.
  • the peak intensity of the probe tack was measured in the same manner as in test 3. evaluated.
  • Tg Glass transition temperature (Tg) measurement of adhesive
  • the semiconductor processing dicing tape before irradiation was immersed in methanol to swell the pressure-sensitive adhesive layer, and then the pressure-sensitive adhesive composition was peeled from the base film with a single blade.
  • the obtained pressure-sensitive adhesive composition was put in an aluminum container, and the glass transition temperature was measured using a differential scanning calorimeter (DSC) and RDC220 type manufactured by Seiko Instruments Inc. The measurement conditions are as follows.
  • Dicing machine DAD-340 manufactured by DISCO Blade: Metal bond blade manufactured by DISCO (B1A801SD 320N100M42, (Inner diameter 40mm, outer diameter 58mm, thickness 0.2mm) Blade rotation speed: 30000 rpm Cutting speed: 50 mm / sec Tape cutting depth: 0.08mm Cutting water volume: Flow rate 2L / min Cutting water temperature: 23 ° C
  • the thickness of the pressure-sensitive adhesive layer was 10 to 30 ⁇ m, and the pressure-sensitive adhesive force after irradiation of the pressure-sensitive adhesive layer was 1.0 when the 90 ° peeling test was performed.
  • the peak width of the probe tack after irradiation with radiation under atmospheric conditions is 50 to 150 mN / mm 2 (Examples 1 to 10) when the tape width is ⁇ 2.0 N / 25 mm, and high for the package during dicing Holding power was obtained, and it was confirmed that no looseness occurred even when the package was picked up after irradiation. Further, the picked up package did not adhere to the tray.
  • the adhesive layer in the dicing tape for semiconductor processing according to the present invention does not easily leave glue balls on the package that has been singulated during dicing, and even when the paste balls adhere, radiation is applied before pick-up. This is probably because the pressure-sensitive adhesive layer was cured while maintaining an appropriate pressure-sensitive adhesive force. If the pressure-sensitive adhesive layer is of a radiation curable type composed of a resin composition containing an acrylic polymer as a base polymer, a radiation curable component is added to the resin composition containing the acrylic polymer.
  • the pressure-sensitive adhesive strength after irradiation of the pressure-sensitive adhesive layer is 1.0 N / when the 90 ° peel test is performed.
  • the tape width was less than 25 mm (Comparative Examples 1, 4, 6, 7, and 9)
  • no sticking to the tray was observed after the pick-up process, but many chips were scattered. This is thought to be because the adhesive layer hardened by radiation irradiation, the adhesive force required for pickup was not maintained, and pickup failure occurred.
  • the adhesive strength of the adhesive layer after irradiation is 1.0 to 2.0 N / 25 mm tape width when the 90 ° peel test is performed, and after irradiation with radiation under atmospheric conditions. Even when the peak intensity of the probe tack was 50 to 150 mN / mm 2 , scattering of the package was confirmed during dicing when the thickness of the pressure-sensitive adhesive layer was less than 10 ⁇ m (Comparative Example 10). Therefore, it was shown that the thickness of the pressure-sensitive adhesive layer of 10 ⁇ m or more is required in order to obtain sufficient retention during dicing.
  • the adhesive strength of the adhesive layer before irradiation is less than 5.0 N / 25 mm tape width when the 90 ° peel test is performed, or the peak strength of the probe tack before irradiation is 250 mN / When it was less than mm 2 (Comparative Examples 1, 2, 3, 7, 8, 10), it was confirmed that the package was not sufficiently held during dicing.
  • the pressure-sensitive adhesive strength of the pressure-sensitive adhesive layer before irradiation is within the range of 5.0 to 10.0 N / 25 mm tape width when a 90 ° peel test is performed (Comparative Examples 7 and 10).
  • Examples 1 to 6 and Comparative Examples 1 to 8 using the pressure-sensitive adhesive composition in which the radiation curable oligomer was added to the base polymer were used, and the glass transition temperature of the pressure-sensitive adhesive was plotted on the horizontal axis, and the adhesive strength and tack before radiation irradiation When the peak intensity was plotted, it was found that there was a correlation that the higher the glass transition temperature, the stronger the adhesive strength before irradiation and the weaker the tack peak intensity.
  • Example 3 Example 6, Comparative Example 3, Comparative Example 5, and Comparative Example 8 in which the oligomer blending ratio is 25 parts by mass, or Example 1 and Example 2 in which the oligomer blending ratio is 50 parts by mass.
  • Example 5 and Comparative Example 2 this correlation is clear when comparing Example 4, Comparative Example 1, Comparative Example 4, Comparative Example 6, and Comparative Example 7 with an oligomer blending ratio of 100 parts by mass. It is.

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Abstract

La présente invention vise à proposer un ruban adhésif de découpage en dés pour un traitement de semi-conducteurs, le ruban ayant une force d'adhésion pour maintenir de manière suffisante une tranche de semi-conducteur durant le procédé de réalisation de découpage en dés sur la tranche, sans provoquer de problèmes tels que l'adhérence au dispositif ou au plateau de boîtiers qui ont été fragmentés après le découpage en dés de boîtiers. La présente invention porte sur un ruban de découpage en dés pour le traitement de semi-conducteurs, caractérisée en ce que : une couche adhésive durcissant sous l'effet d'un rayonnement est formée sur au moins une surface d'un film de substrat ; le film adhésif comprend une composition de résine contenant, comme polymère de base, un polymère à base acrylique ; l'épaisseur du film adhésif est de 10 à 30 µm ; la force d'adhésion de la couche adhésive, après irradiation d'un SUS304 avec un rayonnement basé sur JIS Z0237, est de 1,0 à 2,0 N/25 mm de largeur de ruban lorsqu'un essai de pelage à 90° est réalisé ; et l'intensité de pic d'un collant de sonde de la couche adhésive par irradiation avec un rayonnement dans des conditions atmosphériques d'air est de 50 à 150 mN/mm2.
PCT/JP2012/077252 2011-10-28 2012-10-22 Ruban de découpage en dés pour le traitement de semi-conducteurs WO2013061931A1 (fr)

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JP2015109436A (ja) * 2013-10-23 2015-06-11 リンテック株式会社 ダイシングシート
CN105493309A (zh) * 2013-08-28 2016-04-13 株式会社Lg化学 具有散热结构的单元模块的模块壳体和包括该模块壳体的电池模块
WO2016056269A1 (fr) * 2014-01-23 2016-04-14 古河電気工業株式会社 Ruban adhésif pour protection de surface de tranche semi-conductrice, et procédé d'usinage de tranche semi-conductrice
JP2017003662A (ja) * 2015-06-05 2017-01-05 コニカミノルタ株式会社 誘電体多層膜フィルム

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JP6753631B2 (ja) * 2014-09-09 2020-09-09 リケンテクノス株式会社 フィルムの加工方法
KR20180066043A (ko) * 2015-10-05 2018-06-18 린텍 가부시키가이샤 반도체 가공용 시트
KR102117112B1 (ko) * 2016-04-06 2020-05-29 주식회사 엘지화학 반도체용 점착 조성물, 이의 제조방법 및 반도체용 보호 필름
TWI797154B (zh) * 2018-01-31 2023-04-01 日商三星鑽石工業股份有限公司 膜剝離機構及基板裂斷系統
JP7269095B2 (ja) * 2019-05-29 2023-05-08 古河電気工業株式会社 ガラス加工用テープ

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WO2010041299A1 (fr) * 2008-10-07 2010-04-15 昭和高分子株式会社 Composition adhésive sensible à la pression amovible de type durcissable aux ultraviolets et feuille adhésive sensible à la pression utilisant la composition adhésive sensible à la pression amovible de type durcissable aux ultraviolets
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* Cited by examiner, † Cited by third party
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CN105493309A (zh) * 2013-08-28 2016-04-13 株式会社Lg化学 具有散热结构的单元模块的模块壳体和包括该模块壳体的电池模块
JP2015109435A (ja) * 2013-10-23 2015-06-11 三井・デュポンポリケミカル株式会社 ダイシングテープ基材用樹脂組成物およびダイシングテープ基材
JP2015109436A (ja) * 2013-10-23 2015-06-11 リンテック株式会社 ダイシングシート
WO2016056269A1 (fr) * 2014-01-23 2016-04-14 古河電気工業株式会社 Ruban adhésif pour protection de surface de tranche semi-conductrice, et procédé d'usinage de tranche semi-conductrice
JP2017003662A (ja) * 2015-06-05 2017-01-05 コニカミノルタ株式会社 誘電体多層膜フィルム

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