JP5488001B2 - 接着剤付半導体チップの製造方法及び半導体装置の製造方法 - Google Patents
接着剤付半導体チップの製造方法及び半導体装置の製造方法 Download PDFInfo
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- JP5488001B2 JP5488001B2 JP2010017070A JP2010017070A JP5488001B2 JP 5488001 B2 JP5488001 B2 JP 5488001B2 JP 2010017070 A JP2010017070 A JP 2010017070A JP 2010017070 A JP2010017070 A JP 2010017070A JP 5488001 B2 JP5488001 B2 JP 5488001B2
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- 0 *(c1ccccc1)C1=CC*=CC=C1 Chemical compound *(c1ccccc1)C1=CC*=CC=C1 0.000 description 1
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
Description
式(I)中、R1は、2価の有機基を示し、R2はヒドロキシル基またはカルボキシル基を示す。R2がヒドロキシル基であると、吸湿後の接着力低下抑制の点において好ましく、R2がカルボキシル基であると、現像性向上の点において好ましい。2価の有機基としては、例えば、−CH2−、−C(CF3)―、−SO2−が挙げられる。
式(IV)中、R1及びR2はそれぞれ独立に炭素数1〜5のアルキレン基又は置換基を有してもよいフェニレン基を示し、R3、R4、R5及びR6はそれぞれ独立に炭素数1〜5のアルキル基、フェニル基又はフェノキシ基を示し、n2は1〜5の整数を示す。
Claims (9)
- ダイシングテープ、ポジ型の感光性接着剤組成物からなるポジ型感光性接着剤層、及び、半導体ウェハがこの順に積層された積層体を準備し、前記積層体の前記半導体ウェハ側から前記半導体ウェハをダイシングブレードによって切断することにより、前記半導体ウェハを複数の半導体チップに切り分ける工程と、
前記複数の半導体チップ側から前記ポジ型感光性接着剤層にエネルギー線を照射し、その後前記ポジ型感光性接着剤層に現像液を接触させることにより、前記ポジ型感光性接着剤層をパターニングする工程と、
前記ダイシングテープから前記パターニングされたポジ型感光性接着剤層を剥離することにより、接着剤付半導体チップを得る工程と、
を備える、接着剤付半導体チップの製造方法。 - 前記ダイシングテープが、前記ポジ型感光性接着剤層が積層される側に、エネルギー線の照射によって硬化して粘着力が低下する粘着層を有するものであり、
前記ダイシングテープから前記パターニングされたポジ型感光性接着剤層を剥離する前に、前記ダイシングテープ側からエネルギー線を照射して前記粘着層を硬化させる工程を更に備える、請求項1に記載の接着剤付半導体チップの製造方法。 - 前記ポジ型の感光性接着剤組成物が、アルカリ可溶性ポリマー、及び、エネルギー線を照射することにより酸を発生する光酸発生剤、を含有する、請求項1又は2に記載の接着剤付半導体チップの製造方法。
- 前記光酸発生剤が、ナフトキノンジアジド構造を有する化合物である、請求項3に記載の接着剤付半導体チップの製造方法。
- 前記アルカリ可溶性ポリマーが、カルボキシル基及び/又はフェノール性水酸基を有する、請求項3又は4に記載の接着剤付半導体チップの製造方法。
- 前記アルカリ可溶性ポリマーのガラス転移温度が150℃以下である、請求項3〜5のいずれか一項に記載の接着剤付半導体チップの製造方法。
- 前記アルカリ可溶性ポリマーがポリイミドである、請求項3〜6のいずれか一項に記載の接着剤付半導体チップの製造方法。
- 前記ポジ型の感光性接着剤組成物が、熱硬化性樹脂を更に含有する、請求項3〜7のいずれか一項に記載の接着剤付半導体チップの製造方法。
- 請求項1〜8のいずれか一項に記載の製造方法により得られる接着剤付半導体チップを、前記接着剤付半導体チップの接着剤を介して半導体搭載用支持部材上に接着する工程を備える、半導体装置の製造方法。
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JP5053455B1 (ja) * | 2011-10-28 | 2012-10-17 | 古河電気工業株式会社 | 半導体加工用ダイシングテープ |
JP6028461B2 (ja) * | 2012-08-24 | 2016-11-16 | 日立化成株式会社 | 半導体装置の製造方法及び半導体装置 |
JP6028460B2 (ja) * | 2012-08-24 | 2016-11-16 | 日立化成株式会社 | 半導体装置の製造方法及び半導体装置 |
JP2014063919A (ja) * | 2012-09-21 | 2014-04-10 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP2014225662A (ja) * | 2013-04-26 | 2014-12-04 | 住友ベークライト株式会社 | 感光性接着剤組成物および半導体装置 |
JPWO2016063908A1 (ja) * | 2014-10-22 | 2017-08-10 | 住友ベークライト株式会社 | 感光性接着剤組成物および半導体装置 |
KR102355576B1 (ko) * | 2014-10-24 | 2022-01-25 | 스미또모 베이크라이트 가부시키가이샤 | 감광성 접착제 조성물 및 반도체 장치 |
JP2016086073A (ja) * | 2014-10-24 | 2016-05-19 | 住友ベークライト株式会社 | 半導体装置の製造方法 |
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