WO2013054600A1 - 太陽電池セルの製造方法、及び太陽電池モジュール - Google Patents
太陽電池セルの製造方法、及び太陽電池モジュール Download PDFInfo
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- WO2013054600A1 WO2013054600A1 PCT/JP2012/071406 JP2012071406W WO2013054600A1 WO 2013054600 A1 WO2013054600 A1 WO 2013054600A1 JP 2012071406 W JP2012071406 W JP 2012071406W WO 2013054600 A1 WO2013054600 A1 WO 2013054600A1
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- solar cell
- electrode layer
- partial removal
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- layer
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B26—HAND CUTTING TOOLS; CUTTING; SEVERING
- B26D—CUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
- B26D1/00—Cutting through work characterised by the nature or movement of the cutting member or particular materials not otherwise provided for; Apparatus or machines therefor; Cutting members therefor
- B26D1/01—Cutting through work characterised by the nature or movement of the cutting member or particular materials not otherwise provided for; Apparatus or machines therefor; Cutting members therefor involving a cutting member which does not travel with the work
- B26D1/04—Cutting through work characterised by the nature or movement of the cutting member or particular materials not otherwise provided for; Apparatus or machines therefor; Cutting members therefor involving a cutting member which does not travel with the work having a linearly-movable cutting member
- B26D1/06—Cutting through work characterised by the nature or movement of the cutting member or particular materials not otherwise provided for; Apparatus or machines therefor; Cutting members therefor involving a cutting member which does not travel with the work having a linearly-movable cutting member wherein the cutting member reciprocates
- B26D1/08—Cutting through work characterised by the nature or movement of the cutting member or particular materials not otherwise provided for; Apparatus or machines therefor; Cutting members therefor involving a cutting member which does not travel with the work having a linearly-movable cutting member wherein the cutting member reciprocates of the guillotine type
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B26—HAND CUTTING TOOLS; CUTTING; SEVERING
- B26D—CUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
- B26D3/00—Cutting work characterised by the nature of the cut made; Apparatus therefor
- B26D3/06—Grooving involving removal of material from the surface of the work
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B26—HAND CUTTING TOOLS; CUTTING; SEVERING
- B26F—PERFORATING; PUNCHING; CUTTING-OUT; STAMPING-OUT; SEVERING BY MEANS OTHER THAN CUTTING
- B26F3/00—Severing by means other than cutting; Apparatus therefor
- B26F3/002—Precutting and tensioning or breaking
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the present invention relates to a method of manufacturing individual solar cells by cutting a long solar cell element.
- the solar cell module is configured by electrically joining a plurality of solar cells.
- the plurality of solar cells can be obtained, for example, by cutting a long solar cell element having a base material, a first electrode layer, a light absorption layer, and a second electrode layer in this order.
- the entire solar cell element is generally cut in the thickness direction by using a tool such as a glass cutter or an ultrasonic cutter, or a cutting machine equipped with a pressing blade.
- a tool such as a glass cutter or an ultrasonic cutter, or a cutting machine equipped with a pressing blade.
- the first electrode layer and the second electrode layer, or the second electrode layer and the conductive base material are brought into contact with each other on the cut surface, thereby causing a short circuit of the element.
- the current loss increases, and the device characteristics and reliability of the solar cell deteriorate.
- Patent Document 1 discloses that a base material is cut from the back surface of the insulating base material by applying a force using a tool such as a glass cutter or an ultrasonic cutter.
- the electrodes are cut so as not to contact each other by a force that pushes each layer of the solar cell elements laminated on the substrate to both sides, thereby preventing the electrodes from being short-circuited.
- burrs curved pieces generated on the cut end face
- Patent Document 2 an insulating thin film is formed on the cut surface by introducing a plurality of gases at the time of cutting with a laser beam in order to prevent a short circuit of the electrodes of the solar cell element.
- the base material is a metal
- Patent Document 3 in order to prevent short-circuiting of the electrodes of the solar cell element, the cut surface of the solar cell element is irradiated with microplasma, whereby the cut surface is etched to form a thin line.
- this method since it is necessary to irradiate the light absorption layer with the microplasma, there is a risk of causing plasma damage to the light absorption layer.
- An object of the present invention is to provide a production method capable of efficiently producing a solar cell that is less likely to cause an electrical short circuit at a cut end face, and a solar cell module using the cell.
- One solar cell manufacturing method of the present invention is a long solar cell element having a long flexible substrate, a first electrode layer, a light absorption layer, and a second electrode layer in this order.
- a method of obtaining a solar battery cell wherein the solar battery element is strip-shaped by partially removing the second electrode layer to the light absorption layer or the second electrode layer to the first electrode layer.
- the width of the partial removal portion is formed to be equal to or longer than the width of the cutting tool.
- Another solar cell manufacturing method of the present invention is a long solar cell element having a long flexible substrate, a first electrode layer, a light absorbing layer, and a second electrode layer in this order.
- a method of obtaining a solar battery cell wherein the solar battery element is strip-shaped by partially removing the second electrode layer to the light absorption layer or the second electrode layer to the first electrode layer.
- the removal in the partial removal step is performed by a knife edge-shaped blade, cutting with a rotary blade, or irradiation with a laser beam, and the cutting in the cutting step is performed with a pressing blade. This is done by pressing.
- the strip-shaped partial removal portion is formed in a direction substantially orthogonal to the longitudinal direction of the elongated solar battery element.
- a solar cell module is provided.
- This solar cell module has a plurality of solar cells obtained by any one of the methods, and the plurality of solar cells are electrically joined to each other.
- a short circuit can be prevented at the cut end face of the solar cell element. Furthermore, according to the present invention, it is possible to efficiently obtain individual solar cells from a long solar cell element.
- FIG. 5 is a sectional view taken along line V-V ′ in FIG. 4.
- FIG. 8 is a sectional view taken along line VIII-VIII ′ in FIG. 7.
- the schematic side view of the solar cell module which concerns on one embodiment. However, the portions filled with the sealing resin are indicated by light ink painting.
- FIG. 1 is a schematic cross-sectional view showing a configuration example of a solar battery cell obtained by the manufacturing method of the present invention.
- a thin-film solar cell 1 manufactured by the manufacturing method of the present invention includes a first electrode layer 21, a light absorption layer 3 provided on one surface 21 a of the first electrode layer 21, and one of the light absorption layers 3. And a second electrode layer 22 provided in the direction 3a.
- the first electrode layer 21 is provided on the one surface 4 a of the substrate 4.
- a buffer layer 5 may be provided between the light absorption layer 3 and the second electrode layer 22 as necessary.
- impurities derived from the base material are diffused between the first electrode layer 21 and the light absorption layer 3 or between the first electrode layer 21 and the base material 4.
- a barrier layer (not shown) for suppression may be provided, or an antireflection film (not shown) may be provided on the second electrode layer 22.
- one surface 21a, 3a, 4a of each layer points out the upward surface of each layer in FIG. 1, it may be a downward surface of each layer (this is only a difference in the display direction of the drawing). Absent).
- the solar battery cell 1 manufactured by the manufacturing method of the present invention is not limited to the illustrated structure as long as the light absorption layer 3 is provided between the first electrode layer 21 and the second electrode layer 22.
- the solar battery cell 1 manufactured by the manufacturing method of the present invention may not have the buffer layer 5.
- the solar cell 1 may be provided with any other layer between one layer or two or more layers selected from the layers 4, 21, 3, 5, and 22.
- the substrate 4 is not particularly limited, and examples thereof include metal-based substrates and resin-based substrates.
- the metal base material include a stainless steel base material and an aluminum base material.
- the metal base material preferably has conductivity.
- Examples of the resin-based substrate include a resin sheet having excellent heat resistance such as a polyimide sheet, and a resin sheet having excellent heat resistance and conductivity is preferable.
- the above-described barrier layer may be formed.
- the thickness of the substrate 4 is not particularly limited, but when a metal substrate is used, the thickness is 10 ⁇ m to 100 ⁇ m. When a resin substrate is used, the thickness is 20 ⁇ m to 500 ⁇ m. is there.
- the first electrode layer 21 is formed on the one surface 4 a of the substrate 4.
- the material for forming the first electrode layer 21 is not particularly limited, for example, a refractory metal having high corrosion resistance such as molybdenum, titanium, or chromium is preferable.
- the thickness of the first electrode layer 21 is not particularly limited, but is usually 0.01 ⁇ m to 1.0 ⁇ m.
- the material for forming the barrier layer is not particularly limited.
- SiO 2 , Al 2 O 3 , TiO 2 , Cr, or the like can be used.
- the thickness of the barrier layer is not particularly limited, but is usually 0.05 ⁇ m to 5.0 ⁇ m.
- the material for forming the light absorption layer 3 is not particularly limited.
- the silicon-based material include amorphous silicon, and examples of the compound-based material include CdTe and chalcopyrite. Since the photoelectric conversion efficiency is high and the deterioration over time is low, a compound-based light absorption layer is preferable, and a chalcopyrite-based light absorption layer is more preferable.
- the light absorption layer 3 formed on the first surface 21a side of the first electrode layer 21 is a chalcopyrite p-type light absorption layer.
- the chalcopyrite-based compound is a general term for compounds having a chalcopyrite structure composed of a group Ib metal, a group IIIb metal and a group VIb element in the periodic table.
- the chalcopyrite compounds CuInSe 2, CuGaSe 2, CuAlSe 2, Cu (In, Ga) Se 2, Cu (In, Ga) (S, Se) 2, Cu (In, Al) Se 2, Cu (In, Al) (S, Se) 2 , CuInS 2 , CuGaS 2 , CuAlS 2 , AgInS 2 , CuGaSe 2 , AgInSe 2 , AgGaSe 2 , CuInTe 2 , CuGaTe 2 , AgInTe 2 , AgGaTe 2 and the like.
- the light absorption layer of the present invention preferably contains at least Cu, In, and Se as a chalcopyrite compound.
- the thickness of the light absorption layer 3 is not particularly limited, but is usually 0.5 ⁇ m to
- the buffer layer 5 is formed on the one surface 3 a of the light absorption layer 3.
- the material for forming the buffer layer 5 is not particularly limited. For example, CdS, ZnMgO, ZnO, ZnS, Zn (OH) 2 , In 2 O 3 , In 2 S 3 , and a mixed crystal of Zn (O, S, OH) and the like.
- the buffer layer 5 may be one layer or two or more layers.
- the thickness of the buffer layer 5 is not particularly limited, but is usually 10 nm to 400 nm.
- the second electrode layer 22 is formed on the one surface 5 a of the buffer layer 5.
- the second electrode layer 22 is formed on the one surface 3 a of the light absorption layer 3.
- the formation material of the 2nd electrode layer 22 is not specifically limited, For example, zinc oxide type
- the low resistance second electrode layer 22 can be formed by adding a group IIIb element (Al, Ga, B, etc.) as a dopant.
- the thickness of the second electrode layer 22 is not particularly limited, but is usually 0.05 ⁇ m to 2.5 ⁇ m.
- an individual solar battery cell is manufactured by forming an elongated solar battery element and sequentially cutting it along a planned cutting line.
- the long shape means a band shape in which the length in one direction (longitudinal direction) is sufficiently longer than the length in the direction orthogonal to the one direction, and the length in one direction is It is 5 times or more, preferably 10 times or more the length in the direction perpendicular to one direction.
- the base material flexible base material which has flexibility is also called a flexible base material, and is a base material which can be wound up on a roll.
- the metal-based substrate and the resin-based substrate generally have flexibility although depending on the thickness.
- the length in the longitudinal direction of the substrate and the length in the direction perpendicular to the longitudinal direction are not particularly limited and can be designed as appropriate.
- a direction orthogonal to the longitudinal direction may be referred to as a “short direction”.
- a base material having a length in the short direction that is the same length as the width of the solar cell to be manufactured For example, if a base material having a length in the short direction that is the same length as the width of the solar cell to be manufactured is used, individual solar cells can be obtained by cutting long solar cell elements only in the short direction. A battery cell can be obtained.
- a base material for example, a stainless steel base material having a length in the longitudinal direction of 10 m to 1000 m, a length in the short side direction of 10 mm to 100 mm, and a thickness of 10 ⁇ m to 50 ⁇ m is used.
- the solar cell element is obtained by sequentially forming at least three layers of a first electrode layer, a light absorption layer, and a second electrode layer on the long flexible substrate.
- a long base material wound around a roll is pulled out, and a first electrode layer is formed on one surface thereof.
- the material for forming the first electrode layer is as described above.
- the first electrode layer can be formed by a conventionally known method. Examples of the method for forming the first electrode layer include sputtering, vapor deposition, and printing.
- a light-absorbing layer such as the above-described chalcopyrite is formed on one surface of the first electrode layer of the substrate.
- the light absorption layer can be formed by a conventionally known method. Examples of the method for forming the light absorption layer include vacuum deposition, selenization / sulfurization, and sputtering.
- the chalcopyrite-based light absorption layer has low adhesion to the first electrode layer formed of molybdenum or the like, but according to the manufacturing method of the present invention, the light absorption layer and the second electrode layer are prevented from peeling off.
- the solar cell element can be cut.
- a buffer layer may be formed on one surface of the light absorption layer as necessary.
- the buffer layer can be formed by a conventionally known method.
- the method for forming the buffer layer include a solution growth method (CBD method), a sputtering method, and a metal organic chemical vapor deposition method (MOCVD method).
- CBD method solution growth method
- MOCVD method metal organic chemical vapor deposition method
- the base material having the light absorption layer is immersed in a solution containing the precursor of the buffer layer forming material, and the solution is heated to cause a chemical reaction to proceed between the solution and one side of the light absorption layer.
- CBD method solution growth method
- MOCVD method metal organic chemical vapor deposition method
- a second electrode layer is formed on one surface of the light absorption layer of the substrate (one surface of the buffer layer when the buffer layer is formed).
- the material for forming the second electrode layer is as described above.
- the second electrode layer can be formed by a conventionally known method. Examples of the method for forming the second electrode layer include sputtering, vapor deposition, and metal organic chemical vapor deposition (MOCVD).
- MOCVD metal organic chemical vapor deposition
- a barrier layer is formed between a base material and a 1st electrode layer as needed.
- the barrier layer can be formed by a conventionally known method.
- Examples of the method for forming the barrier layer include a sputtering method, a vapor deposition method, a CVD method, a sol-gel method, and a liquid phase deposition method.
- the partial removal step is a step of partially removing from the second electrode layer to the light absorption layer of the solar cell element or from the second electrode layer to the first electrode layer. By performing this step, a partially removed portion extending in a strip shape in the short direction of the solar cell element is formed.
- a partially removed portion is formed by partially removing from the second electrode layer to the light absorbing layer, or from the second electrode layer to the first electrode layer along or near the cutting line. Then, individual solar cells can be obtained by cutting the solar cell element in the thickness direction in the formation region of the partially removed portion.
- FIG. 3 is a conceptual diagram showing a series of steps of cutting out a solar cell from the element, which forms a partially removed portion in the solar cell element and cuts it.
- the solar cell element 11 pulled out from the roll is conveyed in the longitudinal direction MD.
- the partially removed portion 6 is formed by partially removing from the second electrode layer to the light absorbing layer or from the second electrode layer to the first electrode layer.
- the solar cell 1 is obtained by cutting the solar cell element 11 in the formation region of the partial removal portion.
- one partial removal portion including the planned cutting line may be formed, or at least two (plural) may be formed near the planned cutting line.
- the planned cutting line is a design position designed to cut out individual solar cells from the solar cell element.
- FIG. 4 is a plan view of the solar cell element after the partial removal step.
- FIG. 5 is a cross-sectional view taken along the line VV ′ of FIG. 4 and is a cross-sectional view when a part from the second electrode layer to the first electrode layer is partially removed.
- the solar cell element may be simply referred to as “element”.
- the partial removal step at least one partial removal portion is formed on a part of the surface of the elongated solar cell element 11 by partially removing the second electrode layer 221 to the light absorption layer 31. 61 is formed (FIGS. 4 and 5). The partial removal portion 61 extends in a band shape when the element 11 is seen in a plan view as shown in FIG.
- the partial removal portion 61 is a portion in which a dent formed in the element 11 extends in a strip shape and linearly in the short direction of the element 11.
- the partial removal portion 61 is sandwiched between a first end surface 611 and a second end surface 612 that are a set of end surfaces of the light absorption layer 31 from the second electrode layer 221, and a first end surface 611 and a second end surface 612, and And an electrode exposed surface 613 from which one surface of the first electrode layer 211 is exposed.
- the partial removal portion 61 is formed including the planned cutting line A.
- the said partial removal location 61 is extended and formed in the transversal direction TD of the elongate solar cell element 11, for example.
- the partial removal portion 61 may be formed substantially parallel to the short-side direction TD, or may be formed obliquely with respect to the short-side direction according to the final shape of the solar cell module. Also good.
- the partial removal portion may be formed only in the short direction.
- the portion to be removed is arranged in the longitudinal direction in order to cut between the rows. Is also formed (the same applies hereinafter).
- the width W of the partial removal portion 61 is not particularly limited. However, if the width W is too small, in the cutting step described later, when the cutting tool is applied to the partial removal place 61, the cutting tool scrapes the first end surface 611 or the second end surface 612, thereby There is a risk that the first end surface 611 or the second end surface 612 may sag in the processing direction. From this point, it is preferable that the width W of the partial removal portion 61 is the same as or longer than the width of the cutting tool. For example, when a laser beam is used as a cutting tool, the laser beam has a small line width of 30 ⁇ m.
- the width W of the partial removal portion 61 is preferably 30 ⁇ m or more, more preferably more than 40 ⁇ m, and particularly preferably 50 ⁇ m or more.
- the width W of the partial removal portion 61 is preferably 20 mm or less, and more preferably 10 mm or less.
- a method for partially removing the second electrode layer 221 to the light absorbing layer 31 for example, mechanical cutting such as cutting with a knife edge-shaped blade or cutting with a rotary blade is used. Or cutting by irradiation with a laser beam. By using these cutting tools, it is possible to form the above-mentioned partial removal place.
- the partial removal locations 62 are each of the second electrode layer 221 to the first electrode layer 211.
- a first end surface 621 and a second end surface 622 that are a set of end surfaces, and a substrate exposed surface 623 that is sandwiched between the first end surface 621 and the second end surface 622 and one surface of the substrate 41 is exposed.
- the second electrode layer 221 to the first electrode layer 211 are partially removed, the second electrode layer 221 to the light absorption layer 31 are partially removed except that the first electrode layer 211 is also removed. It is the same as the case of doing. Therefore, the detailed description is abbreviate
- FIG. 7 is a plan view of the solar cell element after the partial removal step.
- FIG. 8 is a cross-sectional view taken along the line VIII-VIII ′ of FIG. 7, and is a cross-sectional view when a part from the second electrode layer to the base material is partially removed.
- the two partial removal locations 71 and 72 extend in a strip shape when the element 11 is viewed in plan as shown in FIG. 7, and are concave when the element 11 is viewed in cross section as shown in FIG. That is, each of the two partial removal locations 71 and 72 is a portion in which a dent formed in a part of the surface of the element 11 extends in a strip shape and linearly in a predetermined direction of the element 11.
- the first partial removal portion 71 is sandwiched between a first end surface 711 and a second end surface 712 that are a set of end surfaces of the light absorption layer 31 from the second electrode layer 221, and a first end surface 711 and a second end surface 712. And an electrode exposed surface 713 from which one surface of the first electrode layer 211 is exposed.
- the second partial removal location 72 is sandwiched between a first end surface 721 and a second end surface 722 that are a set of end surfaces of the light absorption layer 31 from the second electrode layer 221, and the first end surface 721 and the second end surface 722. And an electrode exposed surface 723 where one surface of the first electrode layer 211 is exposed.
- the first partial removal location 71 and the second partial removal location 72 are formed across the planned cutting line A.
- the said 1st partial removal location 71 and the 2nd partial removal location 72 are extended and formed in the transversal direction TD of the elongate solar cell element 11, for example.
- the said 1st partial removal location 71 and the 2nd partial removal location 72 may be formed substantially parallel to the transversal direction TD, or may be formed diagonally with respect to the transversal direction.
- Widths W1 and W2 of the first partial removal portion 71 and the second partial removal portion 72 are not particularly limited. Since the first partial removal portion 71 and the second partial removal portion 72 are formed to partially divide the light absorption layer 31 from the second electrode layer 221, the width thereof is considered in consideration of the yield of solar cells. W1 and W2 are preferably as small as possible. If the widths W1 and W2 are too wide, the yield of the solar battery cells is lowered. Therefore, the widths W1 and W2 of the first partial removal portion 71 and the second partial removal portion 72 are preferably 3 mm or less, and more preferably 1 mm or less. .
- the formation interval W3 between the first partial removal location 71 and the second partial removal location 72 (interval W3 between the first end surface 711 of the first partial removal location 71 and the second end surface 722 of the second partial removal location 72).
- the width W3 is too small, when the cutting tool is applied between the first partial removal portion 71 and the second partial removal portion 72 in the cutting step described later, the cutting tool is the first end surface 711.
- the first end surface 711 or the second end surface 722 may be drooped in the processing direction by cutting the second end surface 722. From this point, it is preferable that the formation interval W3 between the first partial removal portion 71 and the second partial removal portion 72 is the same as or longer than the width of the cutting tool.
- the formation interval W3 between the first partial removal portion 71 and the second partial removal portion 72 is preferably 1 mm or more, more preferably more than 2 mm, and more than 3 mm. Particularly preferred.
- the formation interval W3 between the first partial removal portion 71 and the second partial removal portion 72 is preferably 20 mm or less, and more preferably 10 mm or less.
- the method of partially removing the second electrode layer 221 to the light absorption layer 31 (the method of forming the partial removal portion) is the same as the method described in the section ⁇ When forming one partial removal portion>. It is the same.
- part of the second electrode layer 221 to the first electrode layer 211 is partially removed, it is the same as that in the above ⁇ when one part removal part is formed> column.
- each layer above a 1st electrode layer or a base material can be removed partially, and each layer can be divided.
- This removal is performed by mechanical cutting such as cutting with a knife edge-shaped blade or cutting with a rotary blade, or cutting by laser beam irradiation, so that the end surfaces (first end surface and second end surface) of each layer are processed in the processing direction. It is hard to sag. For this reason, it is possible to prevent a short circuit between the first electrode layer and the second electrode layer.
- the said mechanical cutting or cutting by irradiation of a laser beam it can also prevent that peeling of each layer arises between a 2nd electrode layer and a light absorption layer.
- a cutting process is a process of cut
- the element 11 is cut at the partial removal portion 61.
- the element 11 is cut at the partial removal point 61 using a cutting tool.
- the cutting tool may be applied from the opening side of the partial removal point 61 (second electrode layer side of the element 11), or from the side opposite to the opening side of the partial removal point 61 (base material side of the element 11). You may guess. Alternatively, two cutting tools may be used, and one of the cutting tools may be applied from the opening side of the partial removal location 61 and the other cutting tool may be applied from the side opposite to the opening side of the partial removal location 61.
- the cutting tool Y is applied so as to fit into the partial removal portion 61 formed including the planned cutting line A.
- the element 11 can be cut by the cutting tool Y without contacting the first end surface 611 and the second end surface 612 of the partial removal portion 61.
- the cutting tool Y may be placed along the planned cutting line A.
- symbol Z shown with the dashed-two dotted line of FIG. 5 is a cutter stand which receives the cutting tool Y (FIG. 8 is also the same).
- the element 11 and the cutter base Z are drawn apart from each other, but actually, the element 11 is placed on the cutter base Z.
- the solar cell 1 is cut out from the element 11 by cutting the first electrode layer 211 and the base material 41 corresponding to the partial removal location 61 or the base material 41 corresponding to the partial removal location 61 using a cutting tool. be able to.
- variety of the partial removal location 61 is large compared with the width
- the cutting tool examples include a press cutting blade and a rotary blade. Since the element can be cut in a relatively short time, it is preferable to cut the element by pressing the pressing blade against the partially cut portion.
- a pressing blade whose width (blade thickness) is relatively thin and longer than the length of the element in the short direction is used. By using such a press cutting blade, the element can be cut in the thickness direction by a single press.
- the cutting tool may be applied from the opening side of the partial removal locations 71 and 72, or may be applied from the opposite side, or two cutting tools are used and one of them is cut. The tool may be applied from the opening side and the other cutting tool may be applied from the opposite side.
- the second electrode layer 221, the light absorption layer 31, the first electrode layer 211, and the like are disposed between the first partial removal portion 71 and the second partial removal portion 72.
- the laminated part 11a of the base material 41 remains partially.
- One cutting tool Y is applied to the laminated portion 11a from the opening side of the first partial removal place 71 and the second partial removal place 72 (the cutting tool is indicated by a two-dot chain line in FIG. 8). At this time, it is preferable to apply the cutting tool Y so as not to contact the first end surface 711 of the first partial removal site 71 and the second end surface 722 of the second partial removal site 72.
- the solar cell 1 can be cut out from the element 11 by cutting between the first partial removal portion 71 and the second partial removal portion 72.
- the cutting tool and the cutting method are the same as those described in the section ⁇ Cutting when one partial removal portion is formed>.
- the solar battery cell of the present invention is obtained from the solar battery element.
- the manufacturing method of the photovoltaic cell of this invention may have another process other than said each process.
- burrs may be generated on the cut surface.
- the partial removal step a part from the second electrode layer to the light absorption layer or from the second electrode layer to the first electrode layer is partially formed. Therefore, a solar battery cell that does not cause a short circuit between the second electrode layer and the first electrode layer can be obtained.
- the time required to cut out the solar cell from the element is equal to the time required in the partial removal process. For this reason, according to the manufacturing method of this invention, it becomes possible to cut out each photovoltaic cell efficiently, preventing a short circuit from a photovoltaic cell element in a comparatively short time.
- FIG. 9 is a schematic side view of a solar cell module that includes a plurality of solar cells and in which a plurality of solar cells are electrically joined to each other.
- a plurality of solar cells 1 obtained by the above manufacturing method are arranged between the protective films 91 and 92 while electrically adjoining the adjacent solar cells 1, and sealing resin By enclosing 93, the solar cell module 100 can be configured.
- the joining method of the adjacent photovoltaic cells 1 is not particularly limited.
- the other end portion 4 c of the base material 4 of the adjacent solar battery cell 1 is sequentially superimposed on the one end portion 21 c of the second electrode layer 21 of one solar battery cell 1.
- the plurality of solar battery cells 1 may be electrically connected in series.
- the solar cells 1 are directed so that the cut surfaces 1a of the solar cells 1 are directed in a direction substantially perpendicular to the parallel direction B of the solar cells 1.
- Battery cells 1 are arranged.
- the present invention is not limited to this, and the solar cells 1 may be arranged with the cut surfaces 1a of the solar cells 1 in the parallel direction B of the solar cells 1 (not shown).
- the solar battery cells may be arranged with a space therebetween, and the adjacent solar battery cells may be electrically joined by a conductive wire (not shown).
- Example 1 (Formation of barrier layer) SUS (stainless steel plate) having a width of 20 mm, a length of 100 m, and a thickness of 50 ⁇ m was used as a base material.
- the substrate was mounted in a sputtering apparatus, and the inside of the sputtering apparatus was evacuated. The ultimate vacuum at this time was 2.0 ⁇ 10 ⁇ 4 Pa.
- Ar gas is introduced at a pressure of 0.1 Pa with a mass flow controller (MFC), and sputtering is performed using a DC magnetron sputtering method from a Cr target under a sputtering rate of 30 nm ⁇ min / m.
- MFC mass flow controller
- the sputtering rate is a sputtering rate per unit conveyance speed when sputtering is performed while the substrate is being conveyed.
- the base material with a barrier layer was mounted in a sputtering apparatus, and the inside of the sputtering apparatus was evacuated. The ultimate vacuum at this time was 2.0 ⁇ 10 ⁇ 4 Pa.
- Ar gas was introduced at a pressure of 0.1 Pa with a mass flow controller (MFC), and sputtering was performed using a DC magnetron sputtering method from a Mo target under a sputtering rate of 30 nm ⁇ min / m.
- MFC mass flow controller
- a cell containing Ga, a cell containing In, a cell containing Cu, and a cell containing Se were sequentially arranged as vapor deposition sources.
- the substrate was mounted in the chamber, the inside of the chamber was evacuated to 1.0 ⁇ 10 ⁇ 4 Pa, and the substrate was heated to 550 ° C.
- Each of the vapor deposition sources is heated to 1150 ° C. for Cu, 800 ° C. for In, 950 ° C. for Ga, and 150 ° C. for Se to evaporate each element at the same time.
- a CIGS layer (light absorption layer) made of a pyrite compound was formed.
- the conveyance speed of the base material was 0.1 m / min.
- the film thickness was 2 ⁇ m.
- the film thickness was about 70 nm.
- the first buffer layer was mounted in a sputtering apparatus so that one surface of the first buffer layer was formed, and the sputtering apparatus was evacuated. The ultimate vacuum at this time was 2.0 ⁇ 10 ⁇ 4 Pa.
- Ar gas was introduced at a pressure of 0.2 Pa with a mass flow controller (MFC), and a sputtering film formation method using an RF magnetron sputtering method from a ZnO target under a sputtering rate of 10 nm ⁇ min / m.
- a ZnO layer (second buffer layer) having a thickness of 100 nm was formed.
- Second electrode layer (Formation of second electrode layer) Finally, it was mounted in a sputtering apparatus (manufactured by ULVAC, Inc.) so that one surface of the second buffer layer was formed, and the inside of the chamber was evacuated. The ultimate vacuum at this time was 2.0 ⁇ 10 ⁇ 4 Pa. Next, Ar gas was introduced at a pressure of 0.3 Pa with a mass flow controller (MFC), and from an ITO target (In 2 O 3 : 90 [atomic%], SnO 2 : 10 [atomic%]]) An ITO layer (second electrode layer) having a thickness of 0.5 ⁇ m was formed under the condition of a sputtering rate of 50 nm ⁇ min / m by a DC magnetron sputtering method. Thus, the solar cell element of Example 1 was produced.
- MFC mass flow controller
- a cutting blade having a blade edge angle of 30 degrees and a blade width of 2 mm is used as a cutting tool.
- the cutting blade is pressed at the center of the partial removal portion, and the entire solar cell element is cut in the thickness direction to thereby obtain a width of 20 mm.
- X A solar battery cell having a length of 300 mm was obtained.
- Example 2 A long solar cell element was produced in the same manner as in Example 1. When the partially removed portion was formed, the partially removed portion was formed on the element in the same manner as in Example 1 except that the ITO layer (second electrode layer) to the Mo layer (first electrode layer) were cut. A solar battery cell was obtained by forming and cutting with the press cutting blade.
- Example 3 A long solar cell element was produced in the same manner as in Example 1. Two partial removal locations were formed across the planned cutting line of the produced long solar cell element. Specifically, as a cutting tool, a disk-shaped rotary blade coated with artificial diamond abrasive grains is used, the solar cell element is cut while rotating the rotary blade, and the strip-shaped first portion extending in the short direction is removed. The locations were formed at 300 mm intervals in the longitudinal direction of the element. The width
- second partial removal locations parallel to the first partial removal locations were formed at locations 10 mm away from the first partial removal on one side in the longitudinal direction.
- the width of each second part removal place was 1 mm, and the ITO layer (second electrode layer) to the CIGS layer (light absorption layer) were cut.
- the pressing blade is pressed to the center of a width of 10 mm sandwiched between the first part removal place and the second part removal place, By cutting the entire battery element in the thickness direction, a solar battery cell of 20 mm ⁇ 300 mm was obtained.
- Example 4 A long solar cell element was produced in the same manner as in Example 1. In the same manner as in Example 3, except that the ITO layer (second electrode layer) to the Mo layer (first electrode layer) were cut when forming the first and second partial removal locations, respectively. The solar cell was obtained by forming the first and second partial removal locations respectively and cutting between them with the pressing blade.
- a long solar cell element was produced in the same manner as in Example 1.
- a cutting cell having a blade edge angle of 30 degrees and a blade width of 2 mm is used as a cutting tool, and the entire cell is cut in the thickness direction at intervals of 300 mm in the longitudinal direction of the solar cell element.
- the solar cells of Examples 1 to 4 obtained by partial removal by cutting and then cutting with a pressing blade can suppress short circuit between the electrode layers or between the second electrode layer and the conductive substrate, and the light absorption layer. No peeling occurred.
- the solar cell of the comparative example obtained by cutting with the pressing blade without cutting a short circuit and peeling of the light absorption layer occurred in many samples.
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Abstract
Description
前記複数の太陽電池セルは、例えば、基材と第1電極層と光吸収層と第2電極層とをこの順で有する長尺状の太陽電池素子を切断することにより得ることができる。
好ましくは、前記部分除去工程において、前記部分除去箇所の幅が、切断具の幅と同じ又はそれよりも長く形成される。
本発明の好ましい太陽電池セルの製造方法は、前記部分除去工程において、前記帯状の部分除去箇所が前記長尺状の太陽電池素子の長手方向と略直交する方向に形成される。
この太陽電池モジュールは、前記いずれかの方法により得られた太陽電池セルの複数を有し、前記複数の太陽電池セルが互いに電気的に接合されている。
なお、本明細書において、「AAA~BBB」という記載は、「AAA以上BBB以下」を意味する。
図1は、本発明の製造方法により得られる太陽電池セルの構成例を示す概略断面図である。
本発明の製造方法により作製される、薄膜の太陽電池セル1は、第1電極層21と、第1電極層21の一方面21aに設けられた光吸収層3と、光吸収層3の一方面3aに設けられた第2電極層22と、を有する。前記第1電極層21は、基材4の一方面4aに設けられている。前記光吸収層3と第2電極層22の層間には、必要に応じて、バッファ層5が設けられていてもよい。また、必要に応じて、前記第1電極層21と光吸収層3の間又は第1電極層21と基材4の間の少なくとも何れか一方の間に、前記基材由来の不純物の拡散を抑制するためのバリア層(図示せず)が設けられていてもよいし、第2電極層22の上に反射防止膜(図示せず)が設けられていてもよい。
なお、各層の一方面21a,3a,4aは、図1において、各層の上向きの面を指しているが、各層の下向きの面であってもよい(これは、図面の表示向きの違いに過ぎない)。
前記金属系基材としては、ステンレス基材、アルミニウム基材などが挙げられる。金属系基材は、導電性を有することが好ましい。前記樹脂系基材としては、ポリイミドシートなどの耐熱性に優れた樹脂シートが挙げられ、さらに、耐熱性に優れ且つ導電性を有する樹脂シートが好ましい。なお、基材から不純物が熱拡散することにより、太陽電池セルに悪影響を及ぼす場合は、上述のバリア層を形成してもよい。
前記基材4の厚みは特に限定されないが、金属系基材を用いる場合には、その厚みは、10μm~100μmであり、樹脂系基材を用いる場合には、その厚みは、20μm~500μmである。
第1電極層21の厚みは特に限定されないが、通常、0.01μm~1.0μmである。
光電変換効率が高く、経年劣化が低いことから、化合物系の光吸収層が好ましく、さらに、カルコパイライト系の光吸収層がより好ましい。
例えば、上記第1電極層21の一方面21a側に形成される光吸収層3は、カルコパイライト系のp型光吸収層である。
前記光吸収層3の厚みは特に限定されないが、通常、0.5μm~3μmである。
バッファ層5の厚みは特に限定されないが、通常、10nm~400nmである。
第2電極層22の厚みは特に限定されないが、通常、0.05μm~2.5μmである。
本発明においては、長尺状の太陽電池素子を形成し、それを切断予定線において順次切断することによって、個々の太陽電池セルを製造する。
本発明において、長尺状とは、一方向(長手方向)の長さが一方向と直交する方向の長さに比して十分に長い帯形状を意味し、その一方向の長さは前記一方向と直交する方向の長さの5倍以上、好ましくは、10倍以上である。
ロールツーロール方式で太陽電池セルを連続的に且つ高速で製造できるようになることから、本発明では、可撓性を有する長尺状の基材が用いられる。なお、可撓性を有する基材(可撓性基材)は、フレキシブル基材とも呼ばれ、ロールに巻き取り可能な基材である。前記金属系基材や樹脂系基材は、その厚みにも依るが、一般に、可撓性を有する。
基材の長手方向の長さ及び長手方向と直交する方向の長さは、特に限定されず、適宜設計できる。以下、長手方向と直交する方向を「短手方向」と記す場合がある。
例えば、製造予定の太陽電池セルの幅と同じ長さの短手方向の長さを有する基材を用いれば、長尺状の太陽電池素子を短手方向にのみ切断することによって、個々の太陽電池セルを得ることができる。
このような基材として、長手方向長さが10m~1000m、短手方向の長さが10mm~100mm、厚みが10μm~50μmの基材(例えば、ステンレス製の基材など)が用いられる。
ロールに巻かれた長尺状の基材を引き出し、その一方面に第1電極層を形成する。第1電極層の形成材料は、上述の通りである。
第1電極層は、従来公知の方法で形成できる。第1電極層の形成方法としては、例えば、スパッタ法、蒸着法、印刷法などが挙げられる。
特に、カルコパイライト系の光吸収層は、モリブデンなどから形成される第1電極層に対する密着性が低いが、本発明の製造方法によれば、光吸収層と第2電極層との剥離を防止しつつ、太陽電池素子を切断できる。
例えば、バッファ層の形成材料の前駆物質を含む溶液に、前記光吸収層を有する基材を浸漬し、溶液を加熱して前記溶液と光吸収層の一方面の間で化学反応を進行させることにより、バッファ層を形成できる(CBD法)。
第2電極層は、従来公知の方法で形成できる。第2電極層の形成方法としては、例えば、スパッタ法、蒸着法、有機金属気相成長法(MOCVD法)などが挙げられる。
なお、上記バリア層を有する太陽電池セルを得る場合には、必要に応じて、基材と第1電極層の間にバリア層を形成する。前記バリア層は、従来公知の方法で形成できる。このバリア層の形成方法としては、例えば、スパッタ法、蒸着法、CVD法、ゾル・ゲル法、液相析出法などが挙げられる。
このようにして、図2に示すように、長尺状の可撓性基材41、第1電極層211と、光吸収層31、バッファ層51、第2電極層221が、この順で積層された、長尺状の太陽電池素子11が得られる。
部分除去工程は、前記太陽電池素子の第2電極層から光吸収層まで、又は、前記第2電極層から第1電極層までを部分的に除去する工程である。
この工程を行うことによって、前記太陽電池素子の短手方向に帯状に延びる、部分除去箇所が形成される。
本発明においては、切断予定線又はその近傍に沿って第2電極層から光吸収層まで、又は、前記第2電極層から第1電極層までを部分的に除去することによって部分除去箇所を形成した後、その部分除去箇所の形成領域において太陽電池素子を厚み方向に切断することによって、個々の太陽電池セルを得ることができる。
図3において、ロールから引き出された太陽電池素子11は、長手方向MDに搬送される。その搬送途中で、切削具Xを用いて、第2電極層から光吸収層まで、又は、前記第2電極層から第1電極層までを部分的に除去することによって、部分除去箇所6を形成する。
次に、切断具Yを用いて、前記部分除去箇所の形成領域において太陽電池素子11を切断することによって、太陽電池セル1が得られる。
これを順次繰り返すことにより、1つの太陽電池素子11から、複数の太陽電池セル1を連続的に且つ効率良く製造できる。
本工程の説明において、1つの切断箇所に対応して部分除去箇所を1本形成する場合と、1つの切断箇所に対応して部分除去箇所を複数本形成する場合と、に分けて説明する。
図4は、部分除去工程を行った後の太陽電池素子の平面図である。図5は、図4のV-V’線断面図であって、第2電極層から第1電極層までを部分的に除去したときの断面図である。本明細書において、太陽電池素子を単に「素子」と記す場合がある。
部分除去工程においては、第2電極層221から光吸収層31までを部分的に除去することによって、前記長尺状の太陽電池素子11の面内の一部に、少なくとも1本の部分除去箇所61が形成される(図4及び図5)。
前記部分除去箇所61は、図4のように素子11を平面で見て、帯状に延び、図5のように素子11を断面で見て、凹状である。すなわち、部分除去箇所61は、素子11に形成された凹みが素子11の短手方向に帯状且つ直線的に延びた部分である。
前記部分除去箇所61は、第2電極層221から光吸収層31の各端面の集合である第1端面611及び第2端面612と、第1端面611及び第2端面612の間に挟まれ且つ第1電極層211の一方面が露出した電極露出面613と、から構成されている。
本実施形態においては、前記部分除去箇所61は、例えば、長尺状の太陽電池素子11の短手方向TDに延びて形成される。なお、前記部分除去箇所61は、短手方向TDと略平行に形成されていてもよく、或いは、最終的な太陽電池モジュールの形状に合わせて、短手方向に対して斜めに形成されていてもよい。
第2電極層221から第1電極層211までを部分的に除去する場合は、第1電極層211も除去されること以外、上記第2電極層221から光吸収層31までを部分的に除去する場合と同様である。そのため、その詳細な説明は省略し、図6に同様の符号を援用表示する。
図7は、部分除去工程を行った後の太陽電池素子の平面図である。図8は、図7のVIII-VIII’線断面図であって、第2電極層から基材までを部分的に除去したときの断面図である。
第2電極層221から光吸収層31までを部分的に除去することによって、長尺状の太陽電池素子11の面内の一部に、少なくとも2本の部分除去箇所71,72が形成される(図7及び図8)。
前記2本の部分除去箇所71,72は、図7のように素子11を平面で見て、それぞれ帯状に延び、図8のように素子11を断面で見て、それぞれ凹状である。すなわち、2本の部分除去箇所71,72は、それぞれ、素子11の面内の一部に形成された凹みが素子11の所定方向に帯状且つ直線的に延びた部分である。
前記第2部分除去箇所72は、第2電極層221から光吸収層31の各端面の集合である第1端面721及び第2端面722と、第1端面721及び第2端面722の間に挟まれ且つ第1電極層211の一方面が露出した電極露出面723と、から構成されている。
本実施形態においては、前記第1部分除去箇所71及び第2部分除去箇所72は、例えば、長尺状の太陽電池素子11の短手方向TDに延びて形成される。なお、前記第1部分除去箇所71及び第2部分除去箇所72は、短手方向TDと略平行に形成されていてもよく、或いは、短手方向に対して斜めに形成されていてもよい。
なお、切削箇所において、3本以上の部分除去箇所を形成してもよい(図示せず)。
また、第2電極層221から第1電極層211までを部分的に除去する場合も、上記<部分除去箇所を1本形成する場合>の欄と同様である。
この除去は、ナイフエッジ形状の刃物による切削や回転刃による切削のような機械的切削、或いは、レーザー光線の照射による切削によって行われるので、各層の端面(第1端面及び第2端面)が加工方向に垂れにくい。このため、第1電極層と第2電極層の短絡が生じることを防止できる。
なお、前記機械的切削又はレーザー光線の照射による切削によれば、第2電極層から光吸収層までの間において、各層の剥離が生じることも防止できる。
切断工程は、上記部分切断工程後、部分除去箇所の形成領域における切断予定線又はその近傍に沿って太陽電池素子を切断する工程である。
この工程を行うことによって、素子から個々の太陽電池セルを切り出すことができる。
上記部分除去工程において、図4及び図5に示すように、部分除去箇所61を1本形成した場合、その部分除去箇所61において素子11を切断する。
具体的には、切断具を用いて、部分除去箇所61において素子11を切断する。
切断具を、部分除去箇所61の開口側(素子11の第2電極層側)から当ててもよいし、或いは、部分除去箇所61の開口側とは反対側(素子11の基材側)から当ててもよい。また、2つの切断具を用い、その一方の切断具を部分除去箇所61の開口側から当て且つ他方の切断具を部分除去箇所61の開口側とは反対側から当ててもよい。
部分除去箇所61の中央位置が切断予定線Aに略一致するように部分除去箇所61を形成した場合には、切断具Yを切断予定線Aに沿わせればよい。
なお、図5の二点鎖線で示す符号Zは、切断具Yを受けるカッター台である(図8も同様)。図示上では、素子11とカッター台Zが離れて描かれているが、実際には、素子11は、カッター台Zの上に載せられている。
なお、切断具Yの幅に比して部分除去箇所61の幅が大きい場合には、得られた太陽電池セルの基材の縁部が少しだけ切断面から外方へ突出した状態で残存し得るが、それは太陽電池セルの特性に影響しない。
比較的短時間で素子を切断できることから、押切刃を部分切除箇所に押圧することによって、素子を切断することが好ましい。
例えば、幅(刃厚)が比較的薄く、素子の短手方向の長さよりも長い押切刃が用いられる。このような押切刃を用いれば、一度の押圧によって、素子を厚み方向に切断できる。
上記部分除去工程において、図7及び図8に示すように、部分除去箇所71,72を2本形成した場合、その第1部分除去箇所71と第2部分除去箇所72の間において素子11を切断する。
上述と同様に、切断具を、部分除去箇所71,72の開口側から当ててもよいし、或いは、その反対側から当ててもよいし、或いは、2つの切断具を用い、その一方の切断具を開口側から当て且つ他方の切断具を反対側から当ててもよい。
この際、第1部分除去箇所71の第1端面711及び第2部分除去箇所72の第2端面722に接触しないように、切断具Yを当てることが好ましい。これは、切断具Yの接触によって、第1部分除去箇所71の第1端面711及び第2部分除去箇所72の第2端面722が垂れてしまうことを防止するためである。第1部分除去箇所71と第2部分除去箇所72の形成間隔W3や切断具の当て位置を適宜設定することにより、第1部分除去箇所71の第1端面711及び第2部分除去箇所72の第2端面722に接触させないで、切断具Yにて素子11を切断できる。
積層部11aの中央位置が切断予定線Aに略一致するように第1部分除去箇所71及び第2部分除去箇所72を形成した場合には、切断具Yの幅方向中心部を切断予定線Aに沿わせればよい。
切断具及び切断方法としては、上記<部分除去箇所が1本形成された場合の切断>の欄に記載のものと同様である。
ただし、本発明の太陽電池セルの製造方法は、上記各工程以外に、他の工程を有していてもよい。
また、切断は、上記部分除去工程の除去処理に比して、短時間で完了するので、素子から太陽電池セルを切り出すために要する時間は、上記部分除去工程の除去に要する時間に等しくなる。このため、本発明の製造方法によれば、比較的短時間で太陽電池素子から短絡を防止しつつ、個々の太陽電池セルを効率的に切り出すことが可能となる。
本発明の太陽電池セルは、太陽電池モジュールの構成部品として利用できる。
図9は、太陽電池セルの複数を有し、複数の太陽電池セルが互いに電気的に接合されてなる太陽電池モジュールの概略側面図である。
例えば、上記製法によって得られた太陽電池セル1の複数を、図9に示すように、保護フィルム91,92の間に、隣接する太陽電池セル1を電気的に接合しながら並べ、封止樹脂93を封入することによって、太陽電池モジュール100を構成できる。
例えば、図9に示すように、1つの太陽電池セル1の第2電極層21の一端部21cの上に、隣接する太陽電池セル1の基材4の他端部4cを順次重ね合わせていくことによって、複数の太陽電池セル1を電気的に直列に接合してもよい。各太陽電池セル1を斜めにして重ねた図9の太陽電池モジュール100においては、各太陽電池セル1の切断面1aを太陽電池セル1の並設方向Bと略直交する方向に向けて各太陽電池セル1が並べられている。もっとも、これに限定されず、各太陽電池セル1の切断面1aを太陽電池セル1の並設方向Bに向けて各太陽電池セル1が並べられていてもよい(図示せず)。
その他、隣接する太陽電池セルの接合方式として、各太陽電池セルを間隔を開けて並べていき、隣接する太陽電池セルを導線により電気的に接合してもよい(図示せず)。
(バリア層の形成)
幅20mm、長さ100m、厚み50μmのSUS(ステンレス板)を基材として用いた。その基材をスパッタ装置内に装着し、前記スパッタ装置内を真空排気した。このときの到達真空度は、2.0×10-4Paであった。次に、Arガスをマスフローコントローラー(MFC)にて、0.1Paの圧力になるように導入し、CrターゲットからDCマグネトロンスパッタ方式のスパッタ製膜法で、スパッタレート30nm・min/mの条件下で、基材の一方面に厚み0.3μmのCr層(バリア層)を形成した。なお、前記スパッタレートは、基材を搬送させながらスパッタしたときの、単位搬送速度当たりのスパッタレートである。
前記バリア層付き基材をスパッタ装置内に装着し、前記スパッタ装置内を真空排気した。このときの到達真空度は、2.0×10-4Paであった。次に、Arガスをマスフローコントローラー(MFC)にて、0.1Paの圧力になるように導入し、MoターゲットからDCマグネトロンスパッタ方式のスパッタ製膜法で、スパッタレート30nm・min/mの条件下で、前記バリア層の一方面に厚み0.3μmのMo層(第1電極層)を形成した。
真空蒸着装置のチャンバー内に、Gaを入れたセル、Inを入れたセル、Cuを入れたセル、Seを入れたセルをそれぞれ蒸着源として順に配置した。このチャンバー内に、前記基材を装着し、そのチャンバー内を真空度1.0×10-4Paとし、前記基材を550℃に加熱した。前記各蒸着源をCuが1150℃、Inが800℃、Gaが950℃、Seが150℃となるように加熱して各元素を同時に蒸発させることにより、前記第1電極層の一方面にカルコパイライト化合物からなるCIGS層(光吸収層)を形成した。基材の搬送速度は、0.1m/minとした。
形成した光吸収層を走査型電子顕微鏡により測定したところ、その膜厚は2μmであった。エネルギー分散型X線分析方法を用いて前記光吸収層のカルコパイライト化合物の組成を測定したところ、Cu:In:Ga:Se=23:20:7:50[原子数%]であった。
酢酸カドミウム(Cd(CH3COOH)2)0.001mol/l、チオ尿素(NH2CSNH2)0.005mol/l、酢酸アンモニウム0.01mol/l、及び、アンモニア0.4mol/lを室温にて混合した。前記混合した溶液に前記光吸収層を形成した長尺状基材を巻いたまま浸漬し、これを80℃に加熱したウォーターバスを用いて、室温から80℃まで15分間、加熱することにより、前記光吸収層の一方面に、CdS層(第1バッファ層)を形成した(CBD法)。形成されたCdS膜をエリプソメトリという方法で測定したところ、その膜厚は約70nmであった。
その第1バッファ層の一方面が製膜されるようにスパッタ装置内に装着し、前記スパッタ装置内を真空排気した。このときの到達真空度は、2.0×10-4Paであった。次にArガスをマスフローコントローラー(MFC)にて、0.2Paの圧力になるように導入し、ZnOターゲットからRFマグネトロンスパッタ方式のスパッタ製膜法で、スパッタレート10nm・min/mの条件下で、厚み100nmのZnO層(第2バッファ層)を形成した。
最後に、その第2バッファ層の1方面が製膜されるようにスパッタ装置((株)アルバック製)内に装着し、前記置内を真空排気した。このときの到達真空度は、2.0×10-4Paであった。次にArガスをマスフローコントローラー(MFC)にて、0.3Paの圧力になるよう導入し、ITOターゲット(In2O3:90[原子数%]、SnO2:10[原子数%])からDCマグネトロンスパッタ方式のスパッタ製膜法で、スパッタレート50nm・min/mの条件下で、厚み0.5μmのITO層(第2電極層)を形成した。このようにして実施例1の太陽電池素子を作製した。
作製した長尺状の太陽電池素子の切断予定線に沿って、1つの部分除去箇所を形成した。
具体的には、切削具として、人造ダイヤモンド砥粒をコーティングした円盤状の回転刃(株式会社ディスコ製、商品名:Z05-SD5000-D1A-105 54×2A3×40×45N-L-S3)を用い、前記回転刃を回転させながら、太陽電池素子を切削し、短手方向に延びる帯状の部分除去箇所を、素子の長手方向に300mm間隔で形成した。各部分除去箇所の幅は1mmとし、ITO層(第2電極層)からCIGS層(光吸収層)までを切削した。
次に、切断具として、刃先角度30度、刃幅2mmの押切刃を用い、前記部分除去箇所の中央に前記押切刃を押圧し、太陽電池素子全体を厚み方向に切断することにより、幅20mm×長さ300mmの太陽電池セルを得た。
長尺状の太陽電池素子は実施例1と同様にして作製した。
部分除去箇所を形成する際に、ITO層(第2電極層)からMo層(第1電極層)までを切削したこと以外は、実施例1と同様にして、前記素子に前記部分除去箇所を形成し、前記押切刃によって切断することにより、太陽電池セルを得た。
長尺状の太陽電池素子は実施例1と同様にして作製した。
作製した長尺状の太陽電池素子の切断予定線を挟んで、2つの部分除去箇所を形成した。
具体的には、切削具として、人造ダイヤモンド砥粒をコーティングした円盤状の回転刃を用い、前記回転刃を回転させながら、太陽電池素子を切削し、短手方向に延びる帯状の第1部分除去箇所を、素子の長手方向に300mm間隔で形成した。各第1部分除去箇所の幅は1mmとし、ITO層(第2電極層)からCIGS層(光吸収層)までを切削した。
同様に回転刃を用いて、前記第1部分除去から長手方向一方側に10mm離れた箇所に、前記各第1部分除去箇所と平行な第2部分除去箇所をそれぞれ形成した。各第2部分除去箇所の幅は1mmとし、ITO層(第2電極層)からCIGS層(光吸収層)までを切削した。
次に、切断具として、刃先角度30度、刃幅2mmの押切刃を用い、前記第1部分除去箇所と第2部分除去箇所に挟まれた幅10mmの中央に前記押切刃を押圧し、太陽電池素子全体を厚み方向に切断することにより、20mm×300mmの太陽電池セルを得た。
長尺状の太陽電池素子は、実施例1と同様に作製した。
第1及び第2部分除去箇所をそれぞれ形成する際に、ITO層(第2電極層)からMo層(第1電極層)までを切削したこと以外は、実施例3と同様にして、前記素子に前記第1及び第2部分除去箇所をそれぞれ形成し、前記押切刃によってそれらの間において切断することにより、太陽電池セルを得た。
長尺状の太陽電池素子は、実施例1と同様にして作製した。
切断具として、刃先角度30度、刃幅2mmの押切刃を用い、太陽電池素子の長手方向に300mm間隔で、素子全体を厚み方向に切断することにより、幅20mm×長さ300mmの太陽電池セルを得た。
実施例1乃至4及び比較例の太陽電池セルについて、短絡の有無及び発電に関係する光吸収層の剥離の有無を評価した。その結果を表1に示す。
太陽電池セルの短絡は、太陽電池デバイス特性に基づいて評価した。
具体的には、各太陽電池セルに、Air Mass(AM)=1.5、100mW/cm2の擬似太陽光を当て、IV計測システム(山下電装(株)製)を用いて評価した。
発電に関係する光吸収層の剥離の有無は、目視により評価した。
これらの評価は、実施例1乃至4及び比較例により作製した100個の太陽電池セルを対象とした。表1の評価結果の分母は、対象セル数(100個)を表し、その分子は、短絡していた太陽電池セル及び剥離していた太陽電池セルの個数を表している。
切削により部分除去した後、押切刃により切断して得られた実施例1乃至4の太陽電池セルは、電極層同士、又は第2電極層と導電性基材の短絡が抑制でき、光吸収層の剥離も生じていなかった。
一方、切削することなく、押切刃により切断して得られた比較例の太陽電池セルは、多数のサンプルで短絡及び光吸収層の剥離が生じた。
Claims (6)
- 長尺状の可撓性基材と第1電極層と光吸収層と第2電極層とをこの順で有する長尺状の太陽電池素子から太陽電池セルを得る方法であって、
前記第2電極層から光吸収層まで、又は、前記第2電極層から第1電極層までを部分的に除去することによって、前記太陽電池素子に、帯状に延びる少なくとも1本の部分除去箇所を形成する部分除去工程、
前記部分除去箇所において太陽電池素子を切断する切断工程、
を有する太陽電池セルの製造方法。 - 長尺状の可撓性基材と第1電極層と光吸収層と第2電極層とをこの順で有する長尺状の太陽電池素子から太陽電池セルを得る方法であって、
前記第2電極層から光吸収層まで、又は、前記第2電極層から第1電極層までを部分的に除去することによって、前記太陽電池素子に、帯状に延びる少なくとも2本の部分除去箇所を形成する部分除去工程、
前記2つの部分除去箇所の間において太陽電池素子を切断する切断工程、
を有する太陽電池セルの製造方法。 - 前記部分除去箇所の幅が、切断具の幅と同じ又はそれよりも長い、請求項1に記載の太陽電池セルの製造方法。
- 前記部分除去工程の除去が、ナイフエッジ形状の刃物、回転刃による切削加工、又はレーザー光線の照射によって行われ、
前記切断工程の切断が、押切刃による押圧によって行われる、請求項1~3のいずれか一項に記載の太陽電池セルの製造方法。 - 前記部分除去工程において、前記帯状の部分除去箇所が前記長尺状の太陽電池素子の長手方向と略直交する方向に形成される、請求項1~4のいずれか一項に記載の太陽電池セルの製造方法。
- 請求項1~5のいずれか一項の方法により得られた太陽電池セルの複数を有し、前記複数の太陽電池セルが互いに電気的に接合された太陽電池モジュール。
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CL2016003045A1 (es) * | 2014-05-27 | 2017-06-09 | Sunpower Corp | Modulo escalonado de celda solar |
KR102482566B1 (ko) * | 2014-05-27 | 2022-12-29 | 맥시온 솔라 피티이. 엘티디. | 슁글드 태양 전지 모듈 |
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JP6084648B2 (ja) | 2015-03-24 | 2017-02-22 | 株式会社東芝 | 光電変換素子および光電変換素子の製造方法 |
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