WO2013051713A1 - Porte-éprouvette - Google Patents

Porte-éprouvette Download PDF

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Publication number
WO2013051713A1
WO2013051713A1 PCT/JP2012/076023 JP2012076023W WO2013051713A1 WO 2013051713 A1 WO2013051713 A1 WO 2013051713A1 JP 2012076023 W JP2012076023 W JP 2012076023W WO 2013051713 A1 WO2013051713 A1 WO 2013051713A1
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WO
WIPO (PCT)
Prior art keywords
flow path
coating film
layer
substrate
intermediate layer
Prior art date
Application number
PCT/JP2012/076023
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English (en)
Japanese (ja)
Inventor
猛 宗石
佐藤　政宏
健治 坪川
Original Assignee
京セラ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 京セラ株式会社 filed Critical 京セラ株式会社
Priority to JP2013537576A priority Critical patent/JP5969488B2/ja
Publication of WO2013051713A1 publication Critical patent/WO2013051713A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

Definitions

  • the present invention relates to processing such as polishing, inspection, and conveyance for each sample such as a silicon wafer or a glass substrate used in each manufacturing process in a manufacturing process of a semiconductor integrated circuit, a manufacturing process of a liquid crystal display device, and the like.
  • the present invention relates to a sample holder that holds each sample when performing the above.
  • a semiconductor wafer made of silicon or the like used for manufacturing a semiconductor integrated circuit and a plate-like sample such as a glass substrate used for manufacturing a liquid crystal display device are held on a support table of a manufacturing apparatus or an inspection apparatus in the manufacturing process. Then, processing and inspection are performed.
  • a manufacturing process it is common to use a plurality of manufacturing apparatuses and inspection apparatuses, and means for holding a sample such as a silicon wafer on a support base are the types of manufacturing apparatuses and inspection apparatuses in the manufacturing process, Various types of devices have been proposed according to the type of the conveying device for conveying to the first device.
  • Japanese Patent Laid-Open No. 3-108737 discloses an electrostatic chuck composed of a plurality of ceramic layers, and the electrostatic chuck has a coolant channel formed in an intermediate ceramic layer. Thereby, the wafer can be directly cooled by the electrostatic chuck.
  • the cross-sectional shape of the flow path provided inside the substrate is a rectangular shape.
  • the pressure due to the fluid is concentrated at the corner of the flow path. For this reason, cracks may occur at the corners of the substrate facing the flow path, and fluid leakage may occur.
  • the present invention provides a sample holder that can suppress the occurrence of cracks in the substrate when a fluid is passed through a flow path inside the substrate.
  • a sample holder includes a substrate in which a plurality of ceramic layers are laminated, a channel having a rectangular cross-sectional shape perpendicular to the longitudinal direction is provided inside, and a length of the channel. And a coating film covering the inner surface of the corner in the cross-sectional shape perpendicular to the direction.
  • the sample holder of the present embodiment it is possible to suppress the occurrence of cracks at the corners of the base body in which the flow path is formed when a fluid is passed through the flow path provided inside the base body.
  • FIG. 3 is a schematic diagram illustrating a planar arrangement position of a flow path 11 inside a base body 10.
  • FIG. 3 is a cross-sectional view of the electrostatic chuck 1 taken along a cutting plane line AA ′ shown in FIG. 2.
  • FIG. 4 is a partially enlarged sectional view in which one channel section in the sectional view shown in FIG. 3 is enlarged. It is the elements on larger scale which expanded one channel section of electrostatic chuck 1A which is other embodiments of the present invention.
  • FIG. 1A is a perspective view showing an appearance of an electrostatic chuck 1 according to an embodiment of the present invention.
  • FIG. 1B is a plan view showing an appearance of the electrostatic chuck 1 according to the embodiment of the present invention.
  • the electrostatic chuck 1 has a base 10, an electrode layer 20, and a coating film 30.
  • the electrostatic chuck 1 is a sample holder that holds a sample such as a silicon wafer on the main surface of the substrate 10 by an electrostatic force by applying a voltage to the electrode layer 20 formed on the substrate 10.
  • the base body 10 is composed of a laminated body in which a plurality of ceramic layers are laminated, and a flow path 11 for flowing a fluid is provided inside the laminated body.
  • the electrostatic chuck 1 can heat, cool, or keep the held sample by flowing a fluid through the flow path 11.
  • Any fluid can be used as the fluid flowing in the flow path 11 as long as it is a heat medium that can exchange heat with the held sample through the ceramic layer and the electrode layer 20 from the flow path 11 to the one main surface of the substrate 10. May be.
  • an aqueous medium such as hot water, cold water, and steam, a brine such as 50% ethylene glycol, and a gas containing air can be used as the fluid.
  • the flow path 11 has an opening 11a that communicates with the external space on the end surface of the base 10, and although not shown, an opening that communicates with the external space also on the end surface opposite to the opening 11a. have.
  • the fluid flowing in the flow path 11 flows into the flow path 11 from the opening 11a serving as the supply port, and is discharged from the opening on the opposite side of the opening 11a.
  • a supply pipe extending from a supply apparatus for supplying a fluid as a heat medium is connected to the opening 11a, and a flow path is supplied from the supply apparatus at a predetermined flow rate and flow rate. 11 is supplied with fluid.
  • a drain pipe is connected to the outlet on the opposite side of the opening 11a, and the fluid that has flowed through the flow path 11 and exchanged heat with the sample is discharged from the flow path 11.
  • a return pipe may be connected to the discharge port, and the fluid that has flowed through the flow path 11 and exchanged heat with the sample may be discharged from the flow path 11 and returned to the supply device to circulate the fluid.
  • FIG. 2 is a schematic diagram illustrating the arrangement position of the flow path 11 inside the base 10 in a plan view.
  • the heat transfer area is substantially equal to the projected area of the flow path 11 when the substrate 10 is viewed in plan from the thickness direction, the curvature of the curved portion when the width of the flow path 11 is increased or the flow path 11 is meandered.
  • the heat transfer area can be increased. Note that if the distance between the straight portions when meandering is made too short, the portion that becomes the side wall of the flow path 11 becomes thin and the mechanical strength decreases. It is preferable to arrange the flow path 11 so that the heat area is widened.
  • the flow path 11 has a meandering shape, but is not limited thereto, and may have a spiral shape, or may be a combination of a plurality of concentric circles and a straight line extending in the radial direction connecting the circles. .
  • the channel cross section is formed in a rectangular shape by the inner surface of the substrate 10, and the substrate 10 is a flat surface that connects four corners corresponding to the corners of the channel 11 and adjacent corners.
  • the inner surface of the base 10 constituting the channel 11 having a rectangular channel cross section is composed of four inner surfaces sequentially connected so as to form an annular shape.
  • the corner is an inner corner of a portion of the flow path 11 where the two inner surfaces are connected.
  • the substrate 10 is made of, for example, a ceramic sintered body or glass mainly composed of silicon carbide, silicon nitride, aluminum nitride, aluminum oxide, or the like.
  • a ceramic sintered body or glass mainly composed of silicon carbide, silicon nitride, aluminum nitride, aluminum oxide, or the like.
  • an aluminum nitride sintered body or a silicon carbide sintered body is preferable. Since the aluminum nitride sintered body and the silicon carbide sintered body have a thermal conductivity at room temperature of 180 W / (m ⁇ K) or more, which is higher than that of other materials, locally heat is applied to the held sample. Even when is added, the heat of the sample can be conducted and dissipated, and the sample is hardly distorted due to thermal expansion.
  • the thermal conductivity at room temperature is a value measured with the measured atmospheric temperature within the range of 22 ° C. to 24 ° C., and the thermal conductivity measured at any set temperature within this temperature range is 180 W / ( m ⁇ K) or more. Furthermore, even in an environment exceeding room temperature, the thermal conductivity can be maintained at a high value, and for example, the thermal conductivity of 60 W / (m ⁇ K) or higher can be maintained even at an ambient temperature of 600 ° C. or higher.
  • the aluminum nitride sintered body and the silicon carbide sintered body preferably have an average crystal grain size in the range of 3 to 10 ⁇ m.
  • the average particle size is 3 ⁇ m or more, the crystal particles in the aluminum nitride sintered body are filled relatively well, and the mechanical properties of the sintered body are made relatively good.
  • the average crystal grain size is preferably in the range of 3 to 10 ⁇ m, more preferably in the range of 3 to 7 ⁇ m.
  • the electrode layer 20 is provided in the base 10 and is composed of two separated electrodes 21 and 22.
  • One of the electrodes 21 and 22 is connected to the positive electrode of the power supply, and the other is connected to the negative electrode.
  • the electrode connected to the positive electrode is referred to as electrode 21 (hereinafter referred to as “positive electrode 21”)
  • electrode 22 the electrode connected to the negative electrode
  • the electrode 21 may be connected to the negative electrode
  • the electrode 22 may be connected to the positive electrode.
  • the positive electrode 21 and the negative electrode 22 are each formed in a substantially semicircular shape, and are disposed inside the base body 10 so that the semicircular strings face each other.
  • the two electrodes of the positive electrode 21 and the negative electrode 22 are combined to form a substantially circular outer shape of the entire electrode layer 20.
  • the circular shape that is the outer shape of the electrode layer 20 and the circular shape that is the outer shape of the substrate 10 are concentric circles, and the circular diameter of the outer shape of the electrode layer 20 is smaller than the circular diameter of the outer shape of the substrate 10.
  • the outer shape of the silicon wafer is circular. Therefore, it is preferable that the outer shape of the electrode layer 20 be substantially circular according to the outer shape of the sample.
  • the positive electrode 21 and the negative electrode 22 are each provided with a connection terminal for electrical connection with an external power source.
  • each of the positive electrode 21 and the negative electrode 22 is provided with a connection terminal at a portion where the arc and the string intersect to extend along the string.
  • the connection terminal 21a of the positive electrode 21 and the connection terminal 22a of the negative electrode 22 are provided so as to be adjacent to each other with the same distance as the distance between the strings of the positive electrode 21 and the negative electrode 22, and along the string 10 It extends to the end face of.
  • the connection terminal 21a and the connection terminal 22a are provided so that a part thereof is exposed on the end surface of the base body 10.
  • the positive electrode 21 and the negative electrode 22 are connected to an external power source through this exposed portion.
  • the electrode layer 20 is made of a conductive material such as tungsten or molybdenum, and is formed so as to be an inner layer between the ceramic layers of the base 10 by, for example, paste screen printing.
  • the thickness of the electrode layer 20 of this embodiment is, for example, about 1 to 5 ⁇ m.
  • the covering film 30 is provided in the flow path 11 and covers the inner surface of the corner 10 a corresponding to the corner of the flow path 11.
  • FIG. 3 is a cross-sectional view of the electrostatic chuck 1 taken along a cutting plane line AA ′ shown in FIG.
  • FIG. 4 is a partial enlarged cross-sectional view in which one flow path cross-section in the cross-sectional view shown in FIG. 3 is enlarged.
  • the base 10 is made of a laminate in which four ceramic layers 12, 13, 14, and 15 are laminated, and an electrode layer 20 is disposed therein.
  • the electrode layer 20 is provided on the one main surface side that holds the sample with respect to the flow path 11.
  • the outermost ceramic layer 15 is the outermost layer 15, the ceramic layer 12 is provided with the electrode layer 20 between the outermost layer 15, and the upper layer 12 is the ceramic provided on the opposite side of the ceramic layer 13.
  • the layer 14 is referred to as a lower layer 14, and the ceramic layer 13 sandwiched between the upper layer 12 and the lower layer 14 is referred to as an intermediate layer 13.
  • the names of these layers are given for the sake of convenience of explanation, and the upper layer 12 is not necessarily positioned on the upper side in the vertical direction, and the lower layer 14 is not positioned on the lower side in the vertical direction.
  • the fluid flows from the opening 11a serving as the supply port to the opening 11b serving as the discharge port. Therefore, in FIGS. 3 and 4, the flow direction of the fluid is a direction perpendicular to the paper surface. Therefore, the flow path cross section of the flow path 11 is a cross section in a plane parallel to the paper surface, and is formed in a rectangular shape. Although the flow path 11 in this embodiment is provided in a meandering shape, the cross-sectional shape of the flow path is uniform in the fluid flow direction, and the cross-sectional area of the flow path is also constant.
  • the coating film 30 is preferably provided so as to cover all the inner surfaces of the four corners 10a. More specifically, the coating film 30 is bonded to the inner surface of the corner portion 10a constituting the corner on the four inner surfaces of the base body 10 constituting the flow path 11, and covers the inner surface of this portion. Provided.
  • the base body 10 of the present embodiment is a laminate in which four layers of the outermost layer 15, the upper layer 12, the intermediate layer 13, and the lower layer 14 are laminated as described above.
  • the base 10 is formed by applying and laminating four green sheets previously formed into a predetermined shape by applying a metal paste serving as the electrode layer 20 between the green sheet serving as the outermost layer 15 and the green sheet serving as the upper layer 12. It is obtained by firing.
  • the green sheets that become the outermost layer 15, the upper layer 12, and the lower layer 14 after firing have the same disc shape, and the green sheets that become the intermediate layer 13 after firing become green whose outer shapes become the outermost layer 15, the upper layer 12, and the lower layer 14. Although it has the same circular shape as the sheet, a cutout is provided along the shape of the flow path 11.
  • the surface facing the notch provided in the green sheet serving as the intermediate layer 13 among the surface of the green sheet serving as the upper layer 12 in contact with the intermediate layer 13 becomes the lower layer 14.
  • a surface facing the notch provided in the green sheet serving as the intermediate layer 13 and two end surfaces facing the notch of the green sheet serving as the intermediate layer 13 It becomes four inner surfaces constituting the flow path 11 after firing. That is, the four inner surfaces constituting the flow path 11 are inner surfaces 131 and 132 that are two end surfaces of the inner surface 121 on the upper layer 12 side, the inner surface 141 on the lower layer 14 side, and the intermediate layer 13.
  • the inner surface of the corner portion 10a corresponding to the corner of the flow path 11 is, for example, a first inner surface 121a having a certain width on the inner surface 121 side, the inner surface 121 and the inner surface 131 being connected to each other at an intersecting line perpendicular to each other.
  • the second inner surface 131a having a constant width on the inner surface 131 side.
  • the fixed width is not particularly limited as long as it is a width that can suppress the occurrence of cracks in the substrate 10 which is an effect of the present invention.
  • it can be represented by a ratio with respect to the length of the side in the rectangle of the channel cross section.
  • the width dimension of one inner surface of the corner 10a may be 5 to 50% with respect to the length of the side in the rectangle.
  • the length of the side included in the upper layer 12 among the sides in the rectangle is the width dimension of the inner surface 121 in the flow direction, and is 5 mm in the present embodiment.
  • the width of the first inner surface 121a is 1 mm.
  • middle layer 13 among the sides in a rectangle is the thickness dimension of the intermediate
  • the width of the second inner surface 131a is 0.6 mm.
  • the coating film 30 is provided so as to cover these two inner surfaces, and a portion covering one inner surface and a portion covering the other inner surface are connected and provided integrally.
  • a fluid such as water flows in the flow path 11
  • an outward force is applied to each of the two inner surfaces of the corner 10 a by the flowing fluid.
  • Tensile stress concentrates on the connection location of the two inner surfaces, causing peeling between the upper layer 12 and the intermediate layer 13 or cracking.
  • the coating film 30 the force from the fluid is not directly applied to the two inner surfaces of the corner 10a.
  • the coating film 30 is not provided on the inner surface constituting the flow path 11, and a force from the fluid is applied to this portion, but it is transmitted to the connection location by the coating film 30. Since the force is attenuated, the concentration of stress at the connection point can be greatly reduced.
  • the shape of the coating film 30 is not particularly limited as long as it covers the two inner surfaces of the corner 10a.
  • the channel cross section may have an L-shaped cross section along the corner.
  • a triangular prism having a right-angled triangular cross section in which the portions joined to the two inner surfaces of the corner 10a have two sides sandwiching a right angle may be used.
  • the surface on the opposite side to the side to be joined to the two inner surfaces of the corner portion 10a is a concave curved surface.
  • the material of the coating film 30 is not particularly limited as long as a sufficient bonding force with the substrate 10 can be obtained.
  • a ceramic material similar to that of the base 10 may be used, or a metal material may be used, but a metal material is desirable from the viewpoint of strength. If it is a metal material, it should be a refractory metal having a melting point higher than the sintering temperature of the ceramic material, such as tungsten and molybdenum, so that it can be fired simultaneously with the substrate 10 from the viewpoint of the manufacturing method. More preferably, the material is the same as that of the electrode layer 20.
  • a slurry is prepared by mixing an organic binder, ceramic particles, additives, and the like in the same manner as the green sheet. This slurry is partially applied by printing or the like to a portion where the coating film 30 is to be provided, for example, before the step of laminating the green sheets or during the laminating step.
  • the coating film 30 made of a ceramic material may be formed in the flow path 11 by firing.
  • a metal paste in which an organic binder and metal powder are mixed is prepared in advance.
  • a metal paste is partially applied by printing or the like to a portion where the coating film 30 is to be provided before the step of laminating the green sheets or during the step of laminating, and the green sheet and the metal paste And the coating film 30 made of a metal material may be formed in the flow path 11.
  • a metal film may be formed by plating in the flow path 11 in the base 10 after baking, in addition to simultaneously baking the metal paste with the green sheet. Since the inner surface of the flow path 11 is the surface of the ceramic material, first, a metal thin film is formed by electroless plating, and an electric current is passed through the formed thin film to perform electrolytic plating. When it is desired to provide the coating film 30 only on the corner portion 10a, by selectively depositing a catalyst metal such as palladium on the portion where the coating film 30 is to be provided in advance and performing electroless plating, the corner portion 10a is selectively coated. A thin film can be formed by electroless plating. When the coating film 30 is provided by plating, it is not necessary to consider the sintering temperature of the ceramic material, and a metal material such as copper, silver, gold, nickel, aluminum, or chromium can be used.
  • the coating film 30 When a metal material is used as the coating film 30, it is provided so that a part of the coating film 30 is exposed to the outside from the opening 11a of the flow path 11 and the like, and exposed to a member that becomes an external ground potential.
  • the coating film 30 may be electrically connected.
  • the coating film 30 ⁇ / b> A is provided so as to further cover a portion other than the inner surface of the corner portion 10 a on the inner surface constituting the flow path 11. That is, in addition to the four corners 10a in the flow path 11, the four flat portions 10b are also provided with the coating film 30A so as to further cover the inner surfaces thereof.
  • FIG. 5 is a partial enlarged cross-sectional view in which one flow path cross section of an electrostatic chuck 1A according to another embodiment of the present invention is enlarged.
  • the electrostatic chuck 1A of the present embodiment differs from the electrostatic chuck 1 of the above-described embodiment shown in FIGS. 1 to 4 only in the configuration of the coating film 30A.
  • the arrangement of the flow path 11 corresponding to FIG. 2 and the entire cross-sectional view corresponding to FIG. 3 are omitted, and the flow path 11 corresponding to FIG.
  • the present embodiment will be described using an enlarged cross-sectional view.
  • Electrostatic chucks can be broadly classified into two types of adsorption, the Coulomb force type and the Johnson-Labeck force type, depending on the adsorption method.
  • the Coulomb force type electrostatic chuck uses an insulating material as the base 10 and uses a Coulomb force (electrostatic adsorption force) generated by an electric charge induced between the electrode layer 20 and the object to be processed. Adsorb and hold.
  • the Johnson-Labeck force type electrostatic chuck slightly imparts conductivity to the substrate 10 and uses the Johnson-Labeck force generated by charge transfer in the substrate 10 to attract and hold the object to be processed.
  • the material of the substrate 10 is a non-oxide ceramic material such as aluminum nitride and silicon carbide
  • the fluid flowing in the flow channel 11 is water
  • the flow channel is A voltage is applied to the flowing water, causing water ionization.
  • Oxygen ions generated by ionization move to the positively charged inner surface of the inner surface constituting the flow channel 11 to cause oxidation on the inner surface, so-called anodic oxidation, and the peripheral portion of the substrate 10 around the flow channel 11
  • the electrical characteristics of the other parts will be different. Such a partial difference in electrical characteristics causes a variation in characteristics of the substrate 10, which is not preferable.
  • the coating film 30A by providing the coating film 30A so as to cover all four inner surfaces constituting the flow path 11, even when water is used as the fluid, the occurrence of anodization is suppressed. be able to. More preferably, the coating film 30A is made of a metal material, and the coating film 30A is set to the ground potential.
  • the coating film 30 ⁇ / b> A of the present embodiment includes a first coating film 31 that covers the entire end face facing the flow path 11 of the intermediate layer 13, an intermediate layer 13 between the upper layer 12 and the intermediate layer 13, and the lower layer 14.
  • the second coating film 32 is provided over the entire area, that is, the entire main surface of the upper layer 12 on the intermediate layer 13 side and the entire main surface of the lower layer 14 on the intermediate layer 13 side.
  • the second coating film 32 does not have to be provided on the entire main surface of the upper layer 12 on the intermediate layer 13 side and on the entire main surface of the lower layer 14 on the intermediate layer 13 side, and faces the flow paths 11 of the upper layer 12 and the lower layer 14. You may provide so that only an inner surface may be coat
  • the second coating film 32 is exposed on the outer peripheral end face of the base body 10, and the exposed member and the second coating film 32 are electrically connected to each other.
  • the first coating film 31 and the second coating film 32 are joined at the corner of the flow path 11, and the first coating film 30A is set to the ground potential by setting the second coating film 32 to the ground potential.
  • the coating film 31 also has a ground potential.
  • the intermediate layer 13 is composed of a plurality of layers, and in the example shown in FIG. 5, the intermediate layer 13 is composed of two layers of a first intermediate layer 13a and a second intermediate layer 13b.
  • each layer has the same shape and is laminated in the thickness direction to form the intermediate layer 13.
  • the end surface of the intermediate layer 13 facing the flow path 11 is formed by connecting end surfaces of a plurality of layers in the thickness direction.
  • the intermediate layer 13 when only the inner surface of the corner 10a is covered and the other inner surface where the flow path 11 is desired is exposed, when the intermediate layer 13 is composed of a plurality of layers, the fluid flows into the flow path 11. , The end face of the intermediate layer 13 may be peeled off or cracked at the interface where a plurality of layers are joined.
  • the present embodiment by covering the entire end face of the intermediate layer 13 with the first coating film 31, no force from the fluid is directly applied to the end face of the intermediate layer 13 facing the flow path 11. Occurrence of peeling or cracking at the interface to be bonded or the interface between the first intermediate layer 13a and the second intermediate layer 13b can be suppressed.
  • an aluminum nitride powder having an average particle diameter of 1.5 ⁇ m, an oxygen content of 0.8%, and a carbon content of 300 ppm manufactured by an alumina reduction nitriding method was used. Then, without adding a sintering aid to the aluminum nitride powder, an organic binder and a solvent were mixed and mixed, and then dried at 60 ° C. to produce granulated powder.
  • this granulated powder was filled in a mold, and one disk-shaped molded body having a thickness of 1 mm and three disk-shaped molded bodies having a thickness of 3 mm were molded at a molding pressure of 98 MPa. Thereafter, a notch was formed by cutting on a single molded body having a thickness of 3 mm to be the intermediate layer 13.
  • a metal paste in which an organic binder and tungsten powder were mixed was applied to each of two main surfaces having a thickness of 3 mm in the molded body not cut by a screen printing method to a thickness of 10 ⁇ m.
  • the molded body in which the notch was formed was arranged on the surface to which this metal paste was applied. The same metal paste was applied to the side surface of the finished groove.
  • the molded body on which another metal paste was applied was arranged so that the surface on which the paste was applied was in contact with the molded body on which grooves were formed.
  • the finished laminate was press-molded with a molding pressure of 98 MPa and adhered.
  • the electrode layer 20 is formed by screen-printing the tungsten powder paste on the one main surface of the formed compact. On top of that, a 1 mm-thick disk molded body was placed, and press-molded with a molding pressure of 98 MPa to be adhered.
  • degreasing is performed in a nitrogen atmosphere, followed by firing at 1900 ° C. for 2 hours to produce a disk-shaped sintered body (aluminum nitride base) having a radius of 50 mm and a thickness of 8 mm.
  • the provided substrate 10 was obtained.
  • the configuration in which the electrode layer 20 is provided on the one main surface side with respect to the flow path 11 inside the base body 10 has been described.
  • the structure which provides a layer may be sufficient.
  • the external shape of the electrostatic chucks 1 and 1A is a disk shape, the shape is not limited to this, and may be a rectangular plate shape or other polygonal shape as long as the sample can be held with a sufficient holding force. There may be.
  • the intermediate layer 13 may have a plurality of layers, the upper layer 12, the lower layer 14, and the outermost layer 13 may have a plurality of layers in the same manner as the intermediate layer 13.
  • the present invention is not limited to this, and the present invention can also be applied to a vacuum chuck by vacuum suction without providing the electrode layer 20.
  • another flow path is provided inside the base body 10, and opens toward one main surface of the base body 10, and a plurality of suction holes communicating with the other flow paths are provided.
  • the other channel may be connected to a vacuum pump and the other channel may be in a vacuum state.
  • the flow path 11 is configured to flow a heat medium that exchanges heat with the sample in order to cool or heat the sample held by vacuum suction.
  • a through hole that penetrates the substrate 10 in the thickness direction is provided at a position other than the flow path 11 without providing another flow path, and connected to the vacuum pump through an opening facing the surface opposite to the surface that holds the sample.
  • the inside of the through hole may be in a vacuum state.

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  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

La présente invention a trait à un porte-éprouvette permettant de minimiser l'occurrence de craquelures dans un substrat au cours de l'écoulement d'un fluide à travers un canal qui se trouve à l'intérieur du substrat. Le porte-éprouvette selon la présente invention est un porte-substrat électrostatique (1) qui est doté : d'un substrat (10) qui est constitué d'une pluralité de couches de céramique empilées et qui est pourvu en son intérieur d'un canal (11), dont la forme dans une coupe transversale qui est perpendiculaire au sens de la longueur est rectangulaire ; et d'un film de revêtement (30) qui recouvre les surfaces intérieures des coins (10a) du canal (11) dans la coupe transversale qui est perpendiculaire au sens de la longueur.
PCT/JP2012/076023 2011-10-05 2012-10-05 Porte-éprouvette WO2013051713A1 (fr)

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JP2013537576A JP5969488B2 (ja) 2011-10-05 2012-10-05 試料保持具

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JP2011221435 2011-10-05
JP2011-221435 2011-10-05

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WO2013051713A1 true WO2013051713A1 (fr) 2013-04-11

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WO (1) WO2013051713A1 (fr)

Cited By (10)

* Cited by examiner, † Cited by third party
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JP2015088743A (ja) * 2013-09-27 2015-05-07 Toto株式会社 静電チャック
JP2015220385A (ja) * 2014-05-20 2015-12-07 京セラ株式会社 試料保持具
JP2016529718A (ja) * 2013-08-05 2016-09-23 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 薄い基板をハンドリングするための静電キャリア
EP3111240A1 (fr) * 2014-02-28 2017-01-04 Oxford Instruments Nanotechnology Tools Limited Système de support d'échantillon
EP3196926A4 (fr) * 2014-07-22 2018-04-11 KYOCERA Corporation Élément de montage
EP3671819A1 (fr) * 2018-12-19 2020-06-24 Tokyo Electron Limited Table de montage et procédé de fabrication de la table de montage
WO2024048651A1 (fr) * 2022-08-31 2024-03-07 京セラ株式会社 Structure céramique
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JP2014216516A (ja) * 2013-04-26 2014-11-17 京セラ株式会社 試料保持具
JP2019125811A (ja) * 2013-08-05 2019-07-25 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 薄い基板をハンドリングするための静電キャリア
JP2016529718A (ja) * 2013-08-05 2016-09-23 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 薄い基板をハンドリングするための静電キャリア
US10068783B2 (en) 2013-08-26 2018-09-04 Kyocera Corporation Sample holder
WO2015029575A1 (fr) * 2013-08-26 2015-03-05 京セラ株式会社 Dispositif de retenue d'échantillon
JP6050505B2 (ja) * 2013-08-26 2016-12-21 京セラ株式会社 試料保持具
JP2015088743A (ja) * 2013-09-27 2015-05-07 Toto株式会社 静電チャック
EP3111240A1 (fr) * 2014-02-28 2017-01-04 Oxford Instruments Nanotechnology Tools Limited Système de support d'échantillon
EP3111240B1 (fr) * 2014-02-28 2023-06-14 Oxford Instruments Nanotechnology Tools Limited Système de support d'échantillon
JP2015220385A (ja) * 2014-05-20 2015-12-07 京セラ株式会社 試料保持具
EP3196926A4 (fr) * 2014-07-22 2018-04-11 KYOCERA Corporation Élément de montage
US10410898B2 (en) 2014-07-22 2019-09-10 Kyocera Corporation Mounting member
EP3671819A1 (fr) * 2018-12-19 2020-06-24 Tokyo Electron Limited Table de montage et procédé de fabrication de la table de montage
WO2024048651A1 (fr) * 2022-08-31 2024-03-07 京セラ株式会社 Structure céramique
JP7481536B1 (ja) 2022-12-26 2024-05-10 ナノテック・カンパニー・リミテッド 基板処理用ヒータープレート

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