WO2013038816A1 - 導電性材料、それを用いた接続方法、および接続構造 - Google Patents
導電性材料、それを用いた接続方法、および接続構造 Download PDFInfo
- Publication number
- WO2013038816A1 WO2013038816A1 PCT/JP2012/068974 JP2012068974W WO2013038816A1 WO 2013038816 A1 WO2013038816 A1 WO 2013038816A1 JP 2012068974 W JP2012068974 W JP 2012068974W WO 2013038816 A1 WO2013038816 A1 WO 2013038816A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- metal
- conductive material
- connection
- intermetallic compound
- melting point
- Prior art date
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0233—Sheets, foils
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0244—Powders, particles or spheres; Preforms made therefrom
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0244—Powders, particles or spheres; Preforms made therefrom
- B23K35/025—Pastes, creams, slurries
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
- B23K35/262—Sn as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/302—Cu as the principal constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/047—Making non-ferrous alloys by powder metallurgy comprising intermetallic compounds
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/0483—Alloys based on the low melting point metals Zn, Pb, Sn, Cd, In or Ga
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C13/00—Alloys based on tin
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C13/00—Alloys based on tin
- C22C13/02—Alloys based on tin with antimony or bismuth as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/01—Alloys based on copper with aluminium as the next major constituent
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K13/00—Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
- H05K13/04—Mounting of components, e.g. of leadless components
- H05K13/046—Surface mounting
- H05K13/0465—Surface mounting by soldering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/0425—Copper-based alloys
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
Definitions
- the present invention relates to a conductive material, a connection method using the same, and a connection structure, and more specifically, for example, a conductive material used for mounting an electronic component or via connection, a connection method using the same, and , Connection structure.
- Solder is widely used as a conductive material used for mounting electronic components.
- a high temperature solder for example, Pb-rich Pb-5Sn (melting point: 314 to 310 ° C.), Pb-10 Sn (melting point: 302 to 275 ° C.), etc.
- soldering at a temperature below the melting point of the high temperature solder using, for example, Sn-37Pb eutectic (183 ° C.) of a low temperature solder. Therefore, a method of temperature hierarchical connection in which connection by soldering is performed without melting the high-temperature solder used for the previous soldering has been widely applied.
- Such a temperature hierarchy connection is applied to, for example, a semiconductor device of a die-bonding type chip or a semiconductor device such as a flip chip connection, and after performing connection by soldering inside the semiconductor device, This is an important technique used when the semiconductor device itself is connected to a substrate by soldering.
- Examples of the conductive material used in this application include (a) a second metal (or alloy) ball made of a second metal such as Cu, Al, Au, or Ag or a high melting point alloy containing them, and (b) Sn.
- a solder paste including a mixture of first metal balls made of In has been proposed (see Patent Document 1). Further, Patent Document 1 discloses a connection method using a solder paste and a method for manufacturing an electronic device.
- a low melting point metal (for example, Sn) ball 51 and a high melting point metal (for example, Cu) ball 52 are schematically shown in FIG.
- the solder paste containing the flux 53 is heated to react, and after soldering, as shown in FIG. 4 (b), a plurality of high melting point metal balls 52 have a low melting point derived from the low melting point metal balls. It is connected via an intermetallic compound 54 formed between a metal and a refractory metal derived from a refractory metal ball, and the connection object is connected and connected (soldered) by this linking body. become.
- solder paste of Patent Document 1 an intermetallic compound of a high melting point metal (for example, Cu) and a low melting point metal (for example, Sn) is generated by heating the solder paste in the soldering process.
- a high melting point metal for example, Cu
- Sn low melting point metal
- the diffusion rate is slow, so a large amount of Sn which is a low melting point metal remains.
- the bonding strength at a high temperature is greatly reduced, and it may not be possible to use depending on the type of product to be connected.
- Sn remaining in the soldering process may melt and flow out in the subsequent soldering process, and there is a problem that reliability is low as a high-temperature solder used for temperature hierarchy connection.
- solder in the manufacturing process of the semiconductor device is used.
- Sn remaining in the attaching process may melt and flow out in the reflow soldering process.
- the present invention solves the above-described problems, and is a conductive material that can be used as a solder paste, a via filler, or the like.
- the first metal in the soldering process Using a conductive material having good diffusivity of the second metal, producing an intermetallic compound having a high melting point at a low temperature and in a short time, having a low melting point component hardly remaining after soldering, and having excellent heat resistance strength, and It is an object to provide a connection method and a connection structure with high connection reliability.
- the conductive material of the present invention is A conductive material comprising a first metal and a metal component comprising a second metal having a melting point higher than that of the first metal,
- the first metal is Sn or an alloy containing Sn
- the second metal is a Cu—Al alloy that forms an intermetallic compound having a melting point of 310 ° C. or higher with the first metal.
- the conductive material of the present invention preferably contains a flux component.
- the first metal may be Sn alone, Cu, Ni, Ag, Au, Sb, Zn, Bi, In, Ge, Al, Co, Mn, Fe, Cr, Mg, Mn, Pd, Si, Sr. It is desirable that the alloy contains Sn and at least one selected from the group consisting of Te, P.
- connection method of the present invention is a method of connecting an object to be connected using a conductive material, wherein the conductive material is heated using the conductive material according to any one of claims 1 to 3 to form the conductive material.
- the first metal is an intermetallic compound with the second metal constituting the conductive material, and a connection object is connected.
- connection structure of the present invention is a connection structure in which objects to be connected are connected using the conductive material according to any one of claims 1 to 3,
- the connection part to which the connection object is connected is mainly composed of the second metal derived from the conductive material and an intermetallic compound containing the second metal and Sn, and is derived from the conductive material.
- the ratio of the first metal to the total metal component is 50% by volume or less.
- the intermetallic compound is a Cu—Al alloy that is the second metal derived from the conductive material, and the Sn metal that is the first metal derived from the conductive material.
- the Sn metal that is the first metal derived from the conductive material.
- Single or selected from the group consisting of Cu, Ni, Ag, Au, Sb, Zn, Bi, In, Ge, Al, Co, Mn, Fe, Cr, Mg, Mn, Pd, Si, Sr, Te, P It is desirable that it is an intermetallic compound formed between at least one selected from the above and an alloy containing Sn.
- the conductive material of the present invention is a conductive material including a metal component composed of a first metal and a second metal having a higher melting point than the first metal, and the first metal includes Sn or an alloy containing Sn.
- the second metal the first metal and a Cu—Al alloy that generates an intermetallic compound having a melting point of 310 ° C. or higher are contained, so that the diffusion of the first metal and the second metal progresses dramatically.
- a connection having a high heat resistance strength for example, soldering when the conductive material of the present invention is used as a solder paste
- the semiconductor device is mounted on a substrate by a reflow soldering method. Even in such a case, the soldered portion in the previous soldering process has excellent heat resistance, so it is difficult to remelt in the reflow soldering process, and it is possible to perform highly reliable mounting. .
- FIG. 1 (a), FIG. 1 (b), and FIG. 1 (c) are diagrams schematically showing the behavior when electrodes are connected to each other using the conductive material of the present invention.
- the first metal 1 and the second metal are interposed between the pair of electrodes 11a and 11b.
- a conductive material 10 containing 2 is positioned.
- the first metal 1 When the heating continues thereafter, the first metal 1 generates an intermetallic compound 3 (FIG. 1 (c)) with the second metal 2 (Cu—Al alloy), and this intermetallic compound 3 is formed. As a result, the content of the first metal in the connection portion 4 decreases, and the melting point of the connection portion 4 increases. As a result, it is possible to perform soldering with high heat resistance.
- the mechanism by which the first metal 1 efficiently generates the second metal 2 (Cu—Al alloy) and the intermetallic compound 3 (FIG. 1C) is not necessarily clear, but mainly due to the following reasons. It is guessed.
- the second metal 2 is a Cu—Al alloy, and Al having a first ionization energy smaller than that of Cu is dissolved in Cu constituting the Cu—Al alloy.
- Al is oxidized prior to Cu, and as a result, diffusion of non-oxidized Cu into the molten first metal is promoted, and the first metal 1 (see FIG. 1 (a), (b)), the intermetallic compound 3 is generated, and the content of the first metal in the connecting portion 4 is reduced by that amount, so that the melting point of the connecting portion 4 is increased and heat resistance is increased. It is considered that the strength is improved.
- the conductive material of the present invention usually, most of the first metal reacts with the second metal to form an intermetallic compound, but not all of the first metal becomes an intermetallic compound.
- a part of the first metal 1 may remain as it is without reacting with the second metal. Since the amount is decreased and the melting point of the connecting portion 4 is increased, the heat resistance strength can be improved. Moreover, the self-alignment property at the time of soldering can be improved because a part of 1st metal 1 remains without reacting.
- 1 (a) to 1 (c) are schematic diagrams for explaining the invention in an easy-to-understand manner, and do not accurately show a specific configuration of an actual joint.
- the first metal Sn alone, Cu, Ni, Ag, Au, Sb, Zn, Bi, In, Ge, Al, Co, Mn, Fe, Cr, Mg, Mn, Pd, Si, Sr,
- an alloy containing Sn and at least one selected from the group consisting of Te and P it becomes possible to easily form an intermetallic compound with another metal (second metal).
- the invention can be made more effective.
- the second metal may contain impurities at a ratio of, for example, 1% by weight or less, so long as the reaction with the first metal is not hindered.
- impurities include Zn, Ge, Ti, Sn, Al, Be, Sb, In, Ga, Si, Ag, Mg, La, P, Pr, Th, Zr, B, Pd, Pt, Ni, Au, and the like. It is done.
- the oxygen concentration in the first and second metals is preferably 2000 ppm or less, and particularly preferably 10 to 1000 ppm.
- the conductive material of the present invention can contain a flux.
- the flux fulfills the function of removing the oxide film on the surface of the connection object or metal.
- various known materials composed of, for example, a vehicle, a solvent, a thixotropic agent, and an activator can be used as the flux.
- the vehicle include rosin-based resins, synthetic resins, and mixtures thereof composed of rosin and derivatives such as modified rosin modified with rosin.
- the rosin resin composed of the rosin and a derivative such as a modified rosin modified from the rosin examples include gum rosin, tall rosin, wood rosin, polymerized rosin, hydrogenated rosin, formylated rosin, rosin ester, rosin modified malein.
- examples include acid resins, rosin-modified phenol resins, rosin-modified alkyd resins, and other various rosin derivatives.
- Specific examples of the synthetic resin made of a rosin and a derivative such as a modified rosin obtained by modifying the rosin include a polyester resin, a polyamide resin, a phenoxy resin, and a terpene resin.
- the solvent examples include alcohols, ketones, esters, ethers, aromatics, hydrocarbons, and the like. Specific examples include benzyl alcohol, ethanol, isopropyl alcohol, butanol, diethylene glycol, ethylene glycol. Glycerin, ethyl cellosolve, butyl cellosolve, ethyl acetate, butyl acetate, butyl benzoate, diethyl adipate, dodecane, tetradecene, ⁇ -terpineol, terpineol, 2-methyl 2,4-pentanediol, 2-ethylhexanediol, toluene, Xylene, propylene glycol monophenyl ether, diethylene glycol monohexyl ether, ethylene glycol monobutyl ether, diethylene glycol monobutyl ether, diisobutyl azide Over DOO, hexylene glycol, cyclo
- the thixotropic agent examples include hydrogenated castor oil, carnauba wax, amides, hydroxy fatty acids, dibenzylidene sorbitol, bis (p-methylbenzylidene) sorbitol, beeswax, stearamide, hydroxystearic acid Examples thereof include ethylene bisamide.
- fatty acids such as caprylic acid, lauric acid, myristic acid, palmitic acid, stearic acid and behenic acid, hydroxy fatty acids such as 1,2-hydroxystearic acid, antioxidants, surfactants Those added with amines can also be used as the thixotropic agent.
- Examples of the activator include amine hydrohalides, organic halogen compounds, organic acids, organic amines, polyhydric alcohols, and the like.
- Specific examples of the amine hydrohalides include diphenylguanidine. Hydrobromide, diphenylguanidine hydrochloride, cyclohexylamine hydrobromide, ethylamine hydrochloride, ethylamine hydrobromide, diethylaniline hydrobromide, diethylaniline hydrochloride, triethanolamine hydrobromic acid Examples thereof include salts and monoethanolamine hydrobromide.
- organic halogen compound examples include chlorinated paraffin, tetrabromoethane, dibromopropanol, 2,3-dibromo-1,4-butanediol, 2,3-dibromo-2-butene-1,4- Examples thereof include diol and tris (2,3-dibromopropyl) isocyanurate.
- organic acid include malonic acid, fumaric acid, glycolic acid, citric acid, malic acid, succinic acid, phenyl succinic acid, maleic acid, salicylic acid, anthranilic acid, glutaric acid, suberic acid, and adipine.
- Acids, sebacic acid, stearic acid, abietic acid, benzoic acid, trimellitic acid, pyromellitic acid, dodecanoic acid, etc., and specific organic amines include monoethanolamine, diethanolamine, triethanolamine, tributylamine Aniline, diethylaniline and the like.
- Examples of the polyhydric alcohol include erythritol, pyrogallol, and ribitol.
- the flux at least one selected from the group of thermosetting resins consisting of epoxy resin, phenol resin, polyimide resin, silicon resin or modified resin thereof, acrylic resin, or polyamide resin, polystyrene resin, polymethacrylic resin, polycarbonate Even when a resin containing at least one selected from the group consisting of a resin and a cellulose-based resin is used, the above-described effects of the present invention can be achieved more reliably.
- the conductive material of the present invention contains the flux. Note that the flux is preferably included at a ratio of 7 to 15% by weight with respect to the entire conductive material.
- the conductive material of the present invention does not necessarily contain a flux, and can be applied to a connection method that does not require a flux.
- a method of heating while applying pressure or a strong reduction Even by a method of heating in an atmosphere, a connection object or a metal oxide film on the surface of the metal can be removed to enable a highly reliable connection.
- connection method of the present invention uses the conductive material of the present invention, connects the low melting point metal constituting the conductive material by heating to an intermetallic compound with the second metal constituting the conductive material, and connects Since the objects are connected, the diffusion of the first metal and the second metal in the process of connecting the objects to be connected (soldering process when the conductive material is used as the solder paste) is dramatically increased. It progresses and the change to an intermetallic compound having a higher melting point is promoted, and the ratio of the first metal component to the entire metal component is set to, for example, 50% by volume or less, and soldering with high heat resistance can be performed.
- the design in which the first metal component does not remain completely can be performed by optimizing the metal compounding ratio and the heating conditions in the conductive material. That is, by using the conductive material of the present invention, for example, in a semiconductor device manufacturing process, after manufacturing a semiconductor device through a soldering process, the semiconductor device is mounted on a substrate by a reflow soldering method. Even in such a case, the soldered part in the previous soldering process is excellent in heat resistance, so it should not be remelted in the reflow soldering process and should be mounted with high reliability Is possible.
- connection structure of the present invention As shown in FIG. 1 (c), in the connection part (solder) 4 to which the connection objects (electrodes) 11a and 11b are connected, most of the first metal is second. An intermetallic compound 3 with a metal is formed. As a result, the connecting portion 4 is composed of the second metal 2 and the intermetallic compound 3, and the residual amount of the first metal 1 (FIGS. 1 (a) and (b)) is greatly reduced, so that the heat resistance is high. A connection structure can be realized.
- the intermetallic compound is a Cu—Al alloy, which is a second metal derived from a conductive material, and Sn alone, or Cu, Ni, Ag, Au, Sb, which is a first metal derived from a conductive material.
- Zn, Bi, In, Ge, Al, Co, Mn, Fe, Cr, Mg, Mn, Pd, Si, an alloy containing Sn and at least one selected from the group consisting of Sr, Te, and P In the case of the intermetallic compound formed in (2), it is possible to provide a connection structure having a large heat resistance strength with almost no first metal component remaining.
- Example 1 a conductive material was produced by mixing a powdered first metal (first metal powder), a powdered second metal (second metal powder), and a flux.
- the mixing ratio of the first metal powder and the second metal powder was adjusted so that the volume ratio of the first metal powder / second metal powder was 60/40 (that is, the second metal was 40% by volume).
- the first metal powder As shown in Table 1, as the first metal powder, Sn-3Ag-0.5Cu, Sn, Sn-3.5Ag, Sn-0.75Cu, Sn-0.7Cu-0.05Ni, Sn-5Sb, Sn-2Ag-0.5Cu-2Bi, Sn-3.5Ag-0.5Bi-8In, Sn-9Zn, Sn-8Zn-3Bi were used.
- the average particle diameter of the first metal powder was 25 ⁇ m.
- the first metal Sn-3Ag-0.5Cu is used not only as an example but also as a comparative example. In the case of the comparative example, Cu or Cu-10Zn was combined therewith. Is.
- the number 3.5 of “Sn-3.5Ag” represents the value by weight of the component (in this case, Ag), and the other materials described above and The same applies to the following description.
- Cu-10Al, Cu, Cu-10Zn was used as the second metal powder.
- the average particle size of the second metal powder was 30 ⁇ m.
- rosin 74% by weight
- diethylene glycol monobutyl ether 22% by weight
- triethanolamine 2% by weight
- hydrogenated castor oil 2% by weight
- the produced conductive material was printed on an oxygen-free Cu plate having a size of 10 mm ⁇ 10 mm and a thickness of 0.2 mm using a metal mask.
- the metal mask had an opening diameter of 1.5 mm ⁇ 1.5 mm and a thickness of 100 ⁇ m.
- the shear strength of the obtained joined body was measured and evaluated using a bonding tester.
- the shear strength was measured under the conditions of a lateral pressing speed: 0.1 mm ⁇ s ⁇ 1 , room temperature, and 260 ° C.
- the shear strength 20Nmm -2 or more of the ⁇ (excellent) was evaluated those 2Nmm -2 or less ⁇ (the poor).
- Table 1 shows the compositions of the first metal and the second metal, and the bonding strength (room temperature, 260 ° C.) of each bonded body.
- the conductive material is applied to Cu lands (Cu land dimensions: 0.7 mm ⁇ 0.4 mm) of the printed board (thickness: 100 ⁇ m), and the obtained coated portion has a length of 1 mm, a width of 0.5 mm, and a thickness.
- a 0.5 mm size chip type ceramic capacitor was mounted. After reflowing at a peak temperature of 250 ° C. to bond the Cu land and the ceramic capacitor (after soldering), the printed circuit board is sealed with an epoxy resin and left in an environment with a relative humidity of 85%.
- the ratio of the conductive material (solder) flowing out when heated under the reflow conditions was examined and evaluated as the flow-out defect rate. A case where the defective flow rate of the conductive material was 0 to 50% was evaluated as ⁇ (excellent), and a case where it was larger than 50% was evaluated as ⁇ (impossible). Table 1 shows the defective flow rate of the conductive material and the determination result.
- the bonding strength at room temperature was 20 Nmm ⁇ 2 or more in both Examples and Comparative Examples, and it was confirmed that the bonding strength at the room temperature was practical.
- the bonding strength at 260 ° C. the comparative example had a bonding strength of 2 Nmm ⁇ 2 or less, which was insufficient, while the example maintained a practical strength of 20 Nmm ⁇ 2 or more. Was confirmed.
- the comparative example was larger than 50% by volume, whereas all the examples were 50% by volume or less. In contrast to the above, all the examples were 50% or less, and it was confirmed that they had high heat resistance.
- the sample of the example has high heat resistance because, in the case of the example using the Cu—Al alloy as the second metal, the first ionization energy is 746 kJ ⁇ mol ⁇ 1.
- the first ionization energy of the dissolved Al is as small as 578 kJ ⁇ mol ⁇ 1 . That is, Al having a small first ionization energy is dissolved in Cu, so that the ionization of Al, that is, the oxidation of Al, suppresses the oxidation of Cu, which is the diffusion main, and the first metal and copper This is presumably because the reaction (intermetallic compound formation) is promoted.
- the conductive material of the present invention can be configured as, for example, foam solder as schematically shown in FIGS. 3 (a) and 3 (b).
- the foam solder in FIG. 3A is a foam solder in which a powdery second metal 2 is dispersed in a plate-like first metal 1.
- the foam solder of FIG. 3B is a foam solder in which a plate-like second metal 2 is included in a plate-like first metal 1.
- the conductive material of the present invention is used as foam solder as shown in FIGS. 3A and 3B, the first metal, the second metal, and the flux shown in Example 1 are used.
- the same effects as in the case of using as a mixed so-called solder paste are obtained.
- distributes or encloses a 2nd metal in a 1st metal is not limited to the aspect of Fig.3 (a), (b), It can also be set as another aspect.
- the present invention is not limited to the above-described embodiments, and the types and compositions of the first metal and the second metal constituting the conductive material, the blending ratio of the first metal and the second metal, the components of the flux and the flux Various applications and modifications can be made within the scope of the invention with respect to the blending ratio and the like.
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Conductive Materials (AREA)
Abstract
Description
ところで、従来から広く用いられてきたSn-Pb系はんだにおいては、高温系はんだとして、例えばPbリッチのPb-5Sn(融点:314~310℃)、Pb-10Sn(融点:302~275℃)などを用いて330~350℃の温度ではんだ付けし、その後、例えば、低温系はんだのSn-37Pb共晶(183℃)などを用いて、上記の高温系はんだの融点以下の温度ではんだ付けすることにより、先のはんだ付けに用いた高温系はんだを溶融させることなく、はんだ付けによる接続を行う温度階層接続の方法が広く適用されている。
また、この特許文献1には、はんだペーストを用いた接続方法や、電子機器の製造方法が開示されている。
第1金属と、前記第1金属よりも融点の高い第2金属とからなる金属成分とを含む導電性材料であって、
前記第1金属はSn、またはSnを含む合金であり、
前記第2金属は、前記第1金属と、310℃以上の融点を示す金属間化合物を生成するCu-Al合金であること
を特徴としている。
接続対象物を接続させている接続部は、前記導電性材料に由来する前記第2金属と、前記第2金属とSnとを含む金属間化合物とを主たる成分としており、前記導電性材料に由来する前記第1金属の金属成分全体に対する割合が50体積%以下であること
を特徴としている。
なお、第1金属1が、第2金属2(Cu-Al合金)と、効率よく金属間化合物3(図1(c))を生成するメカニズムは必ずしも明確ではないが、主として以下の理由によるものと推察される。
すなわち、本発明の導電性材料10においては、第2金属2がCu-Al合金であり、Cu-Al合金を構成するCuに、Cuより第1イオン化エネルギーの小さいAlが固溶しているため、AlがCuより先に酸化されることになり、その結果、酸化されていないCuの、溶融した第1金属への拡散が促進され、非常に短時間のうちに、第1金属1(図1(a),(b))との間で金属間化合物3を生成し、その分だけ接続部4における第1金属の含有量が低下することにより、接続部4の融点が上昇して耐熱強度が向上するものと考えられる。
ただし、本発明の導電性材料の場合、通常は、第1金属の大部分が、第2金属と反応して金属間化合物を形成するものの、第1金属のすべてが金属間化合物とはならずに、図1(c)に示すように、第1金属1の一部が第2金属と反応せずそのまま残留する場合があるが、金属間化合物3となった分だけ第1金属1の含有量が減少して接続部4の融点が上昇するため、耐熱強度の向上を図ることができる。また、第1金属1の一部が反応せずに残留することで、はんだ付け時のセルフアライメント性を向上させることができる。
なお、図1(a)~図1(c)は、あくまで発明をわかりやすく説明するための模式的な図であって、実際の接合部の具体的な構成を正確に示すものではない。
また、接続性や反応性を考慮すると、第1および第2金属中の酸素濃度は2000ppm以下であることが好ましく、特に10~1000ppmが好ましい。
フラックスは、接続対象物や金属の表面の酸化被膜を除去する機能を果たす。本発明の導電性材料においては、フラックスとして、例えば、ビヒクル、溶剤、チキソ剤、活性剤などからなる、公知の種々のものを用いることが可能である。
前記ビヒクルの具体的な例としては、ロジンおよびそれを変性した変性ロジンなどの誘導体からなるロジン系樹脂、合成樹脂、またはこれらの混合体などが挙げられる。
また、前記ロジンおよびそれを変性した変性ロジンなどの誘導体からなるロジン系樹脂の具体的な例としては、ガムロジン、トールロジン、ウッドロジン、重合ロジン、水素添加ロジン、ホルミル化ロジン、ロジンエステル、ロジン変性マレイン酸樹脂、ロジン変性フェノール樹脂、ロジン変性アルキド樹脂、その他各種ロジン誘導体などが挙げられる。
また、ロジンおよびそれを変性した変性ロジンなどの誘導体からなる合成樹脂の具体的な例としては、ポリエステル樹脂、ポリアミド樹脂、フェノキシ樹脂、テルペン樹脂などが挙げられる。
また、前記有機酸の具体的な例として、マロン酸、フマル酸、グリコール酸、クエン酸、リンゴ酸、コハク酸、フェニルコハク酸、マレイン酸、サルチル酸、アントラニル酸、グルタル酸、スベリン酸、アジピン酸、セバシン酸、ステアリン酸、アビエチン酸、安息香酸、トリメリット酸、ピロメリット酸、ドデカン酸などがあり、さらに有機アミンの具体的なものとして、モノエタノールアミン、ジエタノールアミン、トリエタノールアミン、トリブチルアミン、アニリン、ジエチルアニリンなどが挙げられる。
また、前記多価アルコールとしてはエリスリトール、ピロガロール、リビトールなどが例示される。
上述のように、フラックスは、接続対象物や金属の表面の酸化被膜を除去する機能を果たすことから、本発明の導電性材料においては、フラックスを含むことが好ましい。なお、フラックスは、導電性材料全体に対して7~15重量%の割合で含むことが好ましい。
ただし、本発明の導電性材料は、必ずしもフラックスを含むことを要するものではなく、フラックスを必要としない接続工法にも適用することが可能であり、例えば、加圧しながら加熱する方法や、強還元雰囲気で加熱する方法などによっても、接続対象物や金属の表面の酸化被膜を除去して、信頼性の高い接続を可能にすることができる。
さらに導電性材料中の金属配合比や加熱条件などを最適化することにより、完全に第1金属成分が残留しない設計を行うことができる。
すなわち、本発明の導電性材料を用いることにより、例えば、半導体装置の製造工程において、はんだ付けを行う工程を経て半導体装置を製造した後、その半導体装置を、リフローはんだ付けの方法で基板に実装するような場合にも、先のはんだ付けの工程におけるはんだ付け部分は、耐熱強度に優れているため、リフローはんだ付けの工程で再溶融してしまうことがなく、信頼性の高い実装を行うことが可能になる。
また、第1金属のSn-3Ag-0.5Cuは、実施例としてのみではなく、比較例としても用いられているが、比較例の場合には、これにCuあるいはCu-10Znが組み合わされたものである。
なお、上記の各材料の表記において、例えば、「Sn-3.5Ag」の数字3.5は当該成分(この場合はAg)の重量%の値を示しており、上記の他の材料および、以下の記載の場合も同様である。
また、フラックスの配合割合は、導電性材料全体に占めるフラックスの割合が10重量%となるような割合とした。
印刷した導電性材料上に、NiめっきおよびAuめっきを施した黄銅端子(サイズ1.2mm×1.0mm×1.0mm)をマウントした後、リフロー装置を用いて、図2に示すリフロープロファイルで無酸素Cu板と黄銅端子を接合させて、両者を電気的、機械的に接続した。
なお、この実施例1においては、導電性材料は実質的にソルダペーストとして用いられている。
上述のようにして作製した試料について、以下の方法で接合強度および導電材料(はんだ)の流れ出し不良率を測定し、特性を評価した。
得られた接合体のシアー強度を、ボンディングテスタを用いて測定し、評価した。
シアー強度の測定は、横押し速度:0.1mm・s-1,室温および260℃の条件下で行った。
そして、シアー強度が20Nmm-2以上のものを○(優)、2Nmm-2以下のものを×(不可)と評価した。
表1に、第1金属および第2金属の組成、各接合体の接合強度(室温、260℃)を示す。
得られた反応生成物を約7mg切り取り、測定温度30℃~300℃、昇温速度5℃/min、N2雰囲気、リファレンスAl2O3の条件で示差走査熱量測定(DSC測定)を行った。得られたDSCチャートの第1金属成分の溶融温度における溶融吸熱ピークの吸熱量から、残留した第1金属成分量を定量化した。これから金属成分全体に対する第1金属成分の割合を残留第1金属成分率として評価した。残留第1金属成分率が50体積%以下の場合を○(優)、50体積%より大きい場合を×(不可)と評価した。
表1に、残留第1金属成分率と判定結果を併せて示す。
プリント基板のCuランド(Cuランド寸法:0.7mm×0.4mm)に前記導電性材料を塗布し(厚さ100μm)、得られた塗布部に、長さ1mm、幅0.5mm、厚さ0.5mmサイズのチップ型セラミックコンデンサをマウントした。
ピーク温度250℃でリフローして、Cuランドとセラミックコンデンサを接合させた後(はんだ付けした後)、プリント基板をエポキシ樹脂で封止して相対湿度85%の環境に放置し、ピーク温度260℃のリフロー条件で加熱して導電性材料(はんだ)が流れ出す割合を調べ、流れ出し不良率として評価した。
導電性材料の流れ出し不良率が0~50%の場合を○(優)、50%より大きい場合を×(不可)と評価した。
表1に、導電性材料の流れ出し不良率と判定結果を併せて示す。
一方、260℃における接合強度についてみると、比較例では2Nmm-2以下と接合強度が不十分であったのに対して、実施例は20Nmm-2以上を保持し、実用強度を備えていることが確認された。
つまり、第1イオン化エネルギーが小さいAlがCuに対して固溶していることで、Alのイオン化、すなわち、Alの酸化により、拡散主体のCuの酸化が抑制され、第1金属と銅との反応(金属間化合物化)が促進されるためであると推測される。
本発明の導電性材料は、例えば、図3(a),(b)に模式的に示すようなフォームはんだとして構成することも可能である。
図3(a)のフォームはんだは、板状の第1金属1中に、粉末状の第2金属2を分散させたフォームはんだである。
また、図3(b)のフォームはんだは、板状の第1金属1中に、板状の第2金属2を内包させたフォームはんだである。
なお、第1金属中に第2金属を分散あるいは内包させる態様は、図3(a),(b)の態様に限定されるものではなく、他の態様とすることも可能である。
2 第2金属
3 金属間化合物
4 接続部
11a,11b 一対の電極(接続対象物)
10 導電性材料
Claims (6)
- 第1金属と、前記第1金属よりも融点の高い第2金属とからなる金属成分とを含む導電性材料であって、
前記第1金属はSn、またはSnを含む合金であり、
前記第2金属は、前記第1金属と、310℃以上の融点を示す金属間化合物を生成するCu-Al合金であること
を特徴とする導電性材料。 - フラックス成分を含むことを特徴とする請求項1記載の導電性材料。
- 前記第1金属は、Sn単体、または、Cu、Ni、Ag、Au、Sb、Zn、Bi、In、Ge、Al、Co、Mn、Fe、Cr、Mg、Mn、Pd、Si、Sr、Te、Pからなる群より選ばれる少なくとも1種とSnとを含む合金であること
を特徴とする請求項1または2記載の導電性材料。 - 導電性材料を用いて接続対象物を接続する方法において、請求項1~3のいずれかに記載の導電性材料を用い、加熱して前記導電性材料を構成する前記第1金属成分と前記第2金属とを金属間化合物にして、接続対象物を接続することを特徴とする接続方法。
- 接続対象物が、請求項1~3のいずれかに記載の導電性材料を用いて接続された接続構造であって、
接続対象物を接続している接続部の導電性材料は、前記導電性材料に由来する前記第2金属と、前記第2金属とSnとを含む金属間化合物とを主たる成分としており、前記導電性材料に由来する前記第1金属の金属成分全体に対する割合が50体積%以下であること
を特徴とする接続構造。 - 前記金属間化合物が、前記導電性材料に由来する前記第2金属であるCu-Al合金と、前記導電性材料に由来する前記第1金属である、Sn単体、または、Cu、Ni、Ag、Au、Sb、Zn、Bi、In、Ge、Al、Co、Mn、Fe、Cr、Mg、Mn、Pd、Si、Sr、Te、Pからなる群より選ばれる少なくとも1種とSnとを含む合金との間に形成された金属間化合物であることを特徴とする請求項5記載の接続構造。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201280044701.4A CN103797139A (zh) | 2011-09-16 | 2012-07-26 | 导电性材料、使用该导电性材料的连接方法和连接结构物 |
EP12832316.9A EP2757168A4 (en) | 2011-09-16 | 2012-07-26 | ELECTROCONDUCTIVE MATERIAL, METHOD AND BINDING STRUCTURE USING THE SAME |
US14/195,018 US20140178703A1 (en) | 2011-09-16 | 2014-03-03 | Electroconductive material, and connection method and connection structure using the same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011202936 | 2011-09-16 | ||
JP2011-202936 | 2011-09-16 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US14/195,018 Continuation US20140178703A1 (en) | 2011-09-16 | 2014-03-03 | Electroconductive material, and connection method and connection structure using the same |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2013038816A1 true WO2013038816A1 (ja) | 2013-03-21 |
Family
ID=47883055
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2012/068974 WO2013038816A1 (ja) | 2011-09-16 | 2012-07-26 | 導電性材料、それを用いた接続方法、および接続構造 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20140178703A1 (ja) |
EP (1) | EP2757168A4 (ja) |
JP (1) | JPWO2013038816A1 (ja) |
CN (1) | CN103797139A (ja) |
WO (1) | WO2013038816A1 (ja) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105364336A (zh) * | 2015-12-29 | 2016-03-02 | 常熟市良益金属材料有限公司 | 一种高镍合金无裂纹焊接工艺 |
WO2016114028A1 (ja) * | 2015-01-16 | 2016-07-21 | 株式会社村田製作所 | 導電性材料、それを用いた接続方法、および接続構造 |
WO2016194434A1 (ja) * | 2015-05-29 | 2016-12-08 | 株式会社村田製作所 | 接合用部材および接合方法 |
WO2017038418A1 (ja) * | 2015-08-31 | 2017-03-09 | 株式会社村田製作所 | 接合用部材、接合用部材の製造方法、および、接合方法 |
WO2017047293A1 (ja) * | 2015-09-15 | 2017-03-23 | 株式会社村田製作所 | 接合用部材、接合用部材の製造方法、および、接合方法 |
WO2017073313A1 (ja) * | 2015-10-29 | 2017-05-04 | 株式会社村田製作所 | 接合部材、および、接合部材の接合方法 |
US10591223B2 (en) | 2015-09-28 | 2020-03-17 | Murata Manufacturing Co., Ltd. | Heat pipe, heat dissipating component, and method for manufacturing heat pipe |
US10625377B2 (en) | 2015-11-05 | 2020-04-21 | Murata Manufacturing Co., Ltd. | Bonding member and method for manufacturing bonding member |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101704868B1 (ko) * | 2012-04-16 | 2017-02-08 | 가부시키가이샤 다니구로구미 | 납땜 장치 및 방법 그리고 제조된 기판 및 전자 부품 |
CN105671342B (zh) * | 2014-11-18 | 2017-08-29 | 张庆参 | 牙科用补牙合金的制造方法 |
KR102604506B1 (ko) * | 2017-06-12 | 2023-11-21 | 오르멧 서키츠 인코퍼레이티드 | 양호한 사용가능 시간 및 열전도성을 갖는 금속성 접착제 조성물, 이의 제조 방법 및 이의 용도 |
CN107400799A (zh) * | 2017-08-07 | 2017-11-28 | 苏州列治埃盟新材料技术转移有限公司 | 一种用于机车电子硬件设备的铜基合金材料及其制备方法 |
CN108044255B (zh) * | 2018-01-17 | 2020-04-28 | 中山翰华锡业有限公司 | 一种用于智能焊接的锡线 |
JP6410164B1 (ja) * | 2018-02-28 | 2018-10-24 | 千住金属工業株式会社 | フラックス及びソルダペースト |
CN110324963A (zh) * | 2018-03-28 | 2019-10-11 | 上海逻骅投资管理合伙企业(有限合伙) | 导电浆料及其制备方法和用途 |
CN110322985A (zh) * | 2018-03-28 | 2019-10-11 | 上海逻骅投资管理合伙企业(有限合伙) | 一种导电浆料及其制备方法和用途 |
US11581239B2 (en) * | 2019-01-18 | 2023-02-14 | Indium Corporation | Lead-free solder paste as thermal interface material |
JP2020116611A (ja) * | 2019-01-24 | 2020-08-06 | 株式会社弘輝 | フラックス及びソルダペースト |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1025562A (ja) * | 1996-07-11 | 1998-01-27 | Dowa Mining Co Ltd | 銅基合金およびその製造方法 |
JPH11129091A (ja) * | 1997-10-28 | 1999-05-18 | Ngk Spark Plug Co Ltd | 半田合金 |
WO2003021664A1 (fr) * | 2001-08-31 | 2003-03-13 | Hitachi, Ltd. | Dispositif semiconducteur, corps structurel et dispositif electronique |
JP2003311469A (ja) * | 2002-04-26 | 2003-11-05 | Senju Metal Ind Co Ltd | ソルダペースト、電子部品およびステップ・ソルダリング方法 |
WO2007125861A1 (ja) * | 2006-04-26 | 2007-11-08 | Senju Metal Industry Co., Ltd. | ソルダペースト |
WO2011027659A1 (ja) * | 2009-09-03 | 2011-03-10 | 株式会社村田製作所 | ソルダペースト、それを用いた接合方法、および接合構造 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003305588A (ja) * | 2002-04-11 | 2003-10-28 | Fujitsu Ltd | 接合材料 |
JP2012523091A (ja) * | 2009-04-02 | 2012-09-27 | オーメット サーキッツ インク | 混合された合金フィラーを含む伝導性組成物 |
JP5280520B2 (ja) * | 2009-04-20 | 2013-09-04 | パナソニック株式会社 | はんだ材料および電子部品接合体 |
-
2012
- 2012-07-26 CN CN201280044701.4A patent/CN103797139A/zh active Pending
- 2012-07-26 EP EP12832316.9A patent/EP2757168A4/en not_active Withdrawn
- 2012-07-26 WO PCT/JP2012/068974 patent/WO2013038816A1/ja active Application Filing
- 2012-07-26 JP JP2013533562A patent/JPWO2013038816A1/ja active Pending
-
2014
- 2014-03-03 US US14/195,018 patent/US20140178703A1/en not_active Abandoned
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1025562A (ja) * | 1996-07-11 | 1998-01-27 | Dowa Mining Co Ltd | 銅基合金およびその製造方法 |
JPH11129091A (ja) * | 1997-10-28 | 1999-05-18 | Ngk Spark Plug Co Ltd | 半田合金 |
WO2003021664A1 (fr) * | 2001-08-31 | 2003-03-13 | Hitachi, Ltd. | Dispositif semiconducteur, corps structurel et dispositif electronique |
JP2003311469A (ja) * | 2002-04-26 | 2003-11-05 | Senju Metal Ind Co Ltd | ソルダペースト、電子部品およびステップ・ソルダリング方法 |
WO2007125861A1 (ja) * | 2006-04-26 | 2007-11-08 | Senju Metal Industry Co., Ltd. | ソルダペースト |
WO2011027659A1 (ja) * | 2009-09-03 | 2011-03-10 | 株式会社村田製作所 | ソルダペースト、それを用いた接合方法、および接合構造 |
Non-Patent Citations (1)
Title |
---|
See also references of EP2757168A4 * |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016114028A1 (ja) * | 2015-01-16 | 2016-07-21 | 株式会社村田製作所 | 導電性材料、それを用いた接続方法、および接続構造 |
JPWO2016194434A1 (ja) * | 2015-05-29 | 2018-02-08 | 株式会社村田製作所 | 接合用部材および接合方法 |
WO2016194434A1 (ja) * | 2015-05-29 | 2016-12-08 | 株式会社村田製作所 | 接合用部材および接合方法 |
US11819915B2 (en) | 2015-05-29 | 2023-11-21 | Murata Manufacturing Co., Ltd. | Bonding member and bonding method |
WO2017038418A1 (ja) * | 2015-08-31 | 2017-03-09 | 株式会社村田製作所 | 接合用部材、接合用部材の製造方法、および、接合方法 |
JPWO2017038418A1 (ja) * | 2015-08-31 | 2018-04-05 | 株式会社村田製作所 | 接合方法 |
WO2017047293A1 (ja) * | 2015-09-15 | 2017-03-23 | 株式会社村田製作所 | 接合用部材、接合用部材の製造方法、および、接合方法 |
JPWO2017047293A1 (ja) * | 2015-09-15 | 2018-05-24 | 株式会社村田製作所 | 接合用部材、接合用部材の製造方法、および、接合方法 |
US10625376B2 (en) | 2015-09-15 | 2020-04-21 | Murata Manufacturing Co., Ltd. | Bonding member, method for manufacturing bonding member, and bonding method |
US10591223B2 (en) | 2015-09-28 | 2020-03-17 | Murata Manufacturing Co., Ltd. | Heat pipe, heat dissipating component, and method for manufacturing heat pipe |
WO2017073313A1 (ja) * | 2015-10-29 | 2017-05-04 | 株式会社村田製作所 | 接合部材、および、接合部材の接合方法 |
US10625377B2 (en) | 2015-11-05 | 2020-04-21 | Murata Manufacturing Co., Ltd. | Bonding member and method for manufacturing bonding member |
CN105364336A (zh) * | 2015-12-29 | 2016-03-02 | 常熟市良益金属材料有限公司 | 一种高镍合金无裂纹焊接工艺 |
Also Published As
Publication number | Publication date |
---|---|
EP2757168A1 (en) | 2014-07-23 |
CN103797139A (zh) | 2014-05-14 |
EP2757168A4 (en) | 2015-09-23 |
US20140178703A1 (en) | 2014-06-26 |
JPWO2013038816A1 (ja) | 2015-03-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5754480B2 (ja) | 接続対象物の接続方法および電子装置の製造方法 | |
WO2013038817A1 (ja) | 導電性材料、それを用いた接続方法、および接続構造 | |
JP5533876B2 (ja) | ソルダペースト、それを用いた接合方法、および接合構造 | |
WO2013038816A1 (ja) | 導電性材料、それを用いた接続方法、および接続構造 | |
CN103168392B (zh) | 连接结构 | |
JP5115915B2 (ja) | 鉛フリーはんだ、そのはんだ加工物、ソルダーペースト及び電子部品はんだ付け基板 | |
JPWO2007055308A1 (ja) | ソルダペーストとはんだ継手 | |
JP2013252548A (ja) | 微細部品接合用のソルダペースト | |
JP6683244B2 (ja) | 接合材料及び接合体の製造方法 | |
JP3782743B2 (ja) | ハンダ用組成物、ハンダ付け方法および電子部品 | |
KR101360142B1 (ko) | 무연 솔더 조성물 | |
JP3877300B2 (ja) | 中温はんだ付け用組成物及びはんだ付け方法 | |
JP2021133410A (ja) | 導電性接合材料および導電性接合体 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 12832316 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2013533562 Country of ref document: JP Kind code of ref document: A |
|
REEP | Request for entry into the european phase |
Ref document number: 2012832316 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2012832316 Country of ref document: EP |
|
NENP | Non-entry into the national phase |
Ref country code: DE |