WO2013035736A1 - Composition durcissable destinée à un dispositif semi-conducteur optique - Google Patents

Composition durcissable destinée à un dispositif semi-conducteur optique Download PDF

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Publication number
WO2013035736A1
WO2013035736A1 PCT/JP2012/072603 JP2012072603W WO2013035736A1 WO 2013035736 A1 WO2013035736 A1 WO 2013035736A1 JP 2012072603 W JP2012072603 W JP 2012072603W WO 2013035736 A1 WO2013035736 A1 WO 2013035736A1
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WO
WIPO (PCT)
Prior art keywords
group
organopolysiloxane
optical semiconductor
formula
curable composition
Prior art date
Application number
PCT/JP2012/072603
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English (en)
Japanese (ja)
Inventor
穣 末▲崎▼
康成 日下
秀文 保井
亮介 山▲崎▼
良隆 国広
満 谷川
貴志 渡邉
靖 乾
千鶴 金
佑 山田
小林　祐輔
Original Assignee
積水化学工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 積水化学工業株式会社 filed Critical 積水化学工業株式会社
Priority to KR1020137029657A priority Critical patent/KR20140071961A/ko
Publication of WO2013035736A1 publication Critical patent/WO2013035736A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/54—Silicon-containing compounds
    • C08K5/544—Silicon-containing compounds containing nitrogen
    • C08K5/5465—Silicon-containing compounds containing nitrogen containing at least one C=N bond
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/54—Silicon-containing compounds
    • C08K5/544—Silicon-containing compounds containing nitrogen
    • C08K5/5455—Silicon-containing compounds containing nitrogen containing at least one group
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/56—Organo-metallic compounds, i.e. organic compounds containing a metal-to-carbon bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Led Device Packages (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

L'invention concerne une composition durcissable destinée à un dispositif semi-conducteur optique au moyen de laquelle il est possible de durcir la composition durcissable et d'obtenir un produit durci qui ne se décollera pas lors de la liaison à un autre objet, même lorsque le dispositif semi-conducteur optique est utilisé dans un environnement rude sous des températures élevées et une humidité élevée, et au moyen de laquelle la durée de vie en pot de la composition durcissable destinée à un dispositif semi-conducteur optique est bonne. La composition durcissable destinée à un dispositif semi-conducteur optique relative à la présente invention comprend un premier organopolysiloxane présentant deux groupes alcényle ou plus, un deuxième organopolysiloxane présentant deux atomes d'hydrogène liés à des atomes de silicium ou plus, un catalyseur d'hydrosilylation et un premier composé de silane présentant des groupes uréido ou des groupes isocyanate.
PCT/JP2012/072603 2011-09-08 2012-09-05 Composition durcissable destinée à un dispositif semi-conducteur optique WO2013035736A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020137029657A KR20140071961A (ko) 2011-09-08 2012-09-05 광반도체 장치용 경화성 조성물

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2011-196538 2011-09-08
JP2011196538 2011-09-08
JP2011240844 2011-11-02
JP2011-240844 2011-11-02
JP2012108706 2012-05-10
JP2012-108706 2012-05-10

Publications (1)

Publication Number Publication Date
WO2013035736A1 true WO2013035736A1 (fr) 2013-03-14

Family

ID=47832181

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Application Number Title Priority Date Filing Date
PCT/JP2012/072603 WO2013035736A1 (fr) 2011-09-08 2012-09-05 Composition durcissable destinée à un dispositif semi-conducteur optique

Country Status (4)

Country Link
JP (1) JPWO2013035736A1 (fr)
KR (1) KR20140071961A (fr)
TW (1) TW201319169A (fr)
WO (1) WO2013035736A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103694709A (zh) * 2013-12-09 2014-04-02 华南理工大学 加成型液体硅橡胶用耐漏电起痕剂及其制备方法和应用
EP3162864A1 (fr) * 2015-11-02 2017-05-03 Shin-Etsu Chemical Co., Ltd. Promoteur d'adhésion, composition de résine organopolysiloxane durcissable par addition et dispositif à semi-conducteurs
JP2020070391A (ja) * 2018-11-01 2020-05-07 株式会社ダイセル 硬化性エポキシ樹脂組成物
JP2020070390A (ja) * 2018-11-01 2020-05-07 株式会社ダイセル 硬化性エポキシ樹脂組成物

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03223362A (ja) * 1989-12-05 1991-10-02 Shin Etsu Chem Co Ltd 自己接着型シリコーンゴム組成物及びシリコーンゴム被覆布
JP2000017042A (ja) * 1998-06-30 2000-01-18 Ge Toshiba Silicones Co Ltd 硬化性組成物
JP2004519544A (ja) * 2001-01-03 2004-07-02 ヘンケル ロックタイト コーポレイション 低温高速硬化シリコーン組成物
JP2007246842A (ja) * 2006-03-17 2007-09-27 Shin Etsu Chem Co Ltd 熱硬化性組成物及び該組成物から得られる層を備えたフィルム
JP2011099090A (ja) * 2009-10-05 2011-05-19 Shin-Etsu Chemical Co Ltd 付加硬化型自己接着性シリコーンゴム組成物
JP4951147B1 (ja) * 2011-09-08 2012-06-13 積水化学工業株式会社 光半導体装置用硬化性組成物

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03223362A (ja) * 1989-12-05 1991-10-02 Shin Etsu Chem Co Ltd 自己接着型シリコーンゴム組成物及びシリコーンゴム被覆布
JP2000017042A (ja) * 1998-06-30 2000-01-18 Ge Toshiba Silicones Co Ltd 硬化性組成物
JP2004519544A (ja) * 2001-01-03 2004-07-02 ヘンケル ロックタイト コーポレイション 低温高速硬化シリコーン組成物
JP2007246842A (ja) * 2006-03-17 2007-09-27 Shin Etsu Chem Co Ltd 熱硬化性組成物及び該組成物から得られる層を備えたフィルム
JP2011099090A (ja) * 2009-10-05 2011-05-19 Shin-Etsu Chemical Co Ltd 付加硬化型自己接着性シリコーンゴム組成物
JP4951147B1 (ja) * 2011-09-08 2012-06-13 積水化学工業株式会社 光半導体装置用硬化性組成物

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103694709A (zh) * 2013-12-09 2014-04-02 华南理工大学 加成型液体硅橡胶用耐漏电起痕剂及其制备方法和应用
CN103694709B (zh) * 2013-12-09 2016-04-13 华南理工大学 加成型液体硅橡胶用耐漏电起痕剂及其制备方法和应用
EP3162864A1 (fr) * 2015-11-02 2017-05-03 Shin-Etsu Chemical Co., Ltd. Promoteur d'adhésion, composition de résine organopolysiloxane durcissable par addition et dispositif à semi-conducteurs
US10040924B2 (en) 2015-11-02 2018-08-07 Shin-Etsu Chemical Co., Ltd. Adhesion promoter, addition curable organopolysiloxane resin composition and semiconductor apparatus
JP2020070391A (ja) * 2018-11-01 2020-05-07 株式会社ダイセル 硬化性エポキシ樹脂組成物
JP2020070390A (ja) * 2018-11-01 2020-05-07 株式会社ダイセル 硬化性エポキシ樹脂組成物
JP7329319B2 (ja) 2018-11-01 2023-08-18 株式会社ダイセル 硬化性エポキシ樹脂組成物
JP7329320B2 (ja) 2018-11-01 2023-08-18 株式会社ダイセル 硬化性エポキシ樹脂組成物

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JPWO2013035736A1 (ja) 2015-03-23
TW201319169A (zh) 2013-05-16
KR20140071961A (ko) 2014-06-12

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