WO2013035736A1 - Curable composition for optical semiconductor device - Google Patents
Curable composition for optical semiconductor device Download PDFInfo
- Publication number
- WO2013035736A1 WO2013035736A1 PCT/JP2012/072603 JP2012072603W WO2013035736A1 WO 2013035736 A1 WO2013035736 A1 WO 2013035736A1 JP 2012072603 W JP2012072603 W JP 2012072603W WO 2013035736 A1 WO2013035736 A1 WO 2013035736A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- group
- organopolysiloxane
- optical semiconductor
- formula
- curable composition
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 252
- 239000000203 mixture Substances 0.000 title claims abstract description 249
- 230000003287 optical effect Effects 0.000 title claims abstract description 247
- 229920001296 polysiloxane Polymers 0.000 claims abstract description 217
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 99
- -1 silane compound Chemical class 0.000 claims abstract description 96
- 229910000077 silane Inorganic materials 0.000 claims abstract description 76
- 125000003342 alkenyl group Chemical group 0.000 claims abstract description 69
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 69
- 238000006459 hydrosilylation reaction Methods 0.000 claims abstract description 27
- 239000003054 catalyst Substances 0.000 claims abstract description 26
- 125000001951 carbamoylamino group Chemical group C(N)(=O)N* 0.000 claims abstract description 21
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 78
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 74
- 125000003118 aryl group Chemical group 0.000 claims description 71
- 125000004432 carbon atom Chemical group C* 0.000 claims description 67
- 125000003545 alkoxy group Chemical group 0.000 claims description 45
- 239000000463 material Substances 0.000 claims description 33
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 claims description 23
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 claims description 19
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 18
- 239000000565 sealant Substances 0.000 claims description 16
- 239000007809 chemical reaction catalyst Substances 0.000 claims description 15
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 10
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 claims description 6
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 claims description 5
- RMKZLFMHXZAGTM-UHFFFAOYSA-N [dimethoxy(propyl)silyl]oxymethyl prop-2-enoate Chemical compound CCC[Si](OC)(OC)OCOC(=O)C=C RMKZLFMHXZAGTM-UHFFFAOYSA-N 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 125000004429 atom Chemical group 0.000 claims description 3
- 125000003700 epoxy group Chemical group 0.000 claims description 3
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 12
- 229920000642 polymer Polymers 0.000 description 103
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 78
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- 125000004430 oxygen atom Chemical group O* 0.000 description 30
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- 229910052814 silicon oxide Inorganic materials 0.000 description 27
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 23
- RCNRJBWHLARWRP-UHFFFAOYSA-N ethenyl-[ethenyl(dimethyl)silyl]oxy-dimethylsilane;platinum Chemical compound [Pt].C=C[Si](C)(C)O[Si](C)(C)C=C RCNRJBWHLARWRP-UHFFFAOYSA-N 0.000 description 20
- 125000000524 functional group Chemical group 0.000 description 20
- 229910052697 platinum Inorganic materials 0.000 description 20
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 19
- BITPLIXHRASDQB-UHFFFAOYSA-N ethenyl-[ethenyl(dimethyl)silyl]oxy-dimethylsilane Chemical compound C=C[Si](C)(C)O[Si](C)(C)C=C BITPLIXHRASDQB-UHFFFAOYSA-N 0.000 description 18
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- 238000005481 NMR spectroscopy Methods 0.000 description 16
- 238000006243 chemical reaction Methods 0.000 description 15
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 15
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- 230000015572 biosynthetic process Effects 0.000 description 14
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- 239000004332 silver Substances 0.000 description 14
- 238000003786 synthesis reaction Methods 0.000 description 14
- FRGPKMWIYVTFIQ-UHFFFAOYSA-N triethoxy(3-isocyanatopropyl)silane Chemical compound CCO[Si](OCC)(OCC)CCCN=C=O FRGPKMWIYVTFIQ-UHFFFAOYSA-N 0.000 description 14
- 230000007423 decrease Effects 0.000 description 13
- 238000000034 method Methods 0.000 description 13
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 12
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- 230000004888 barrier function Effects 0.000 description 12
- 239000000126 substance Substances 0.000 description 12
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 8
- 239000012298 atmosphere Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
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- 238000007747 plating Methods 0.000 description 8
- 230000002708 enhancing effect Effects 0.000 description 7
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- 238000002156 mixing Methods 0.000 description 7
- 239000011164 primary particle Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 6
- 230000001588 bifunctional effect Effects 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 6
- 238000002845 discoloration Methods 0.000 description 6
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical group [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 6
- 238000005227 gel permeation chromatography Methods 0.000 description 6
- 150000003961 organosilicon compounds Chemical class 0.000 description 6
- SCVFZCLFOSHCOH-UHFFFAOYSA-M potassium acetate Chemical compound [K+].CC([O-])=O SCVFZCLFOSHCOH-UHFFFAOYSA-M 0.000 description 6
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 238000005336 cracking Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000004954 Polyphthalamide Substances 0.000 description 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 4
- 235000011054 acetic acid Nutrition 0.000 description 4
- 229910052783 alkali metal Inorganic materials 0.000 description 4
- 150000001721 carbon Chemical group 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000000428 dust Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- POPACFLNWGUDSR-UHFFFAOYSA-N methoxy(trimethyl)silane Chemical compound CO[Si](C)(C)C POPACFLNWGUDSR-UHFFFAOYSA-N 0.000 description 4
- 229920006375 polyphtalamide Polymers 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 229910052717 sulfur Inorganic materials 0.000 description 4
- 239000011593 sulfur Substances 0.000 description 4
- 238000005382 thermal cycling Methods 0.000 description 4
- KWEKXPWNFQBJAY-UHFFFAOYSA-N (dimethyl-$l^{3}-silanyl)oxy-dimethylsilicon Chemical compound C[Si](C)O[Si](C)C KWEKXPWNFQBJAY-UHFFFAOYSA-N 0.000 description 3
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 3
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 3
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
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- 150000001336 alkenes Chemical class 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
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- 238000001914 filtration Methods 0.000 description 3
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- 238000010438 heat treatment Methods 0.000 description 3
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- 150000007522 mineralic acids Chemical class 0.000 description 3
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- 238000005160 1H NMR spectroscopy Methods 0.000 description 2
- ATVJXMYDOSMEPO-UHFFFAOYSA-N 3-prop-2-enoxyprop-1-ene Chemical compound C=CCOCC=C ATVJXMYDOSMEPO-UHFFFAOYSA-N 0.000 description 2
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- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
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- LSNNMFCWUKXFEE-UHFFFAOYSA-N Sulfurous acid Chemical compound OS(O)=O LSNNMFCWUKXFEE-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000007259 addition reaction Methods 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 125000006267 biphenyl group Chemical group 0.000 description 1
- FSIJKGMIQTVTNP-UHFFFAOYSA-N bis(ethenyl)-methyl-trimethylsilyloxysilane Chemical compound C[Si](C)(C)O[Si](C)(C=C)C=C FSIJKGMIQTVTNP-UHFFFAOYSA-N 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- 125000004369 butenyl group Chemical group C(=CCC)* 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- HUCVOHYBFXVBRW-UHFFFAOYSA-M caesium hydroxide Inorganic materials [OH-].[Cs+] HUCVOHYBFXVBRW-UHFFFAOYSA-M 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 238000010538 cationic polymerization reaction Methods 0.000 description 1
- NVBVGMKBMCZMFG-UHFFFAOYSA-N cesium;2-methylpropan-2-olate Chemical compound [Cs+].CC(C)(C)[O-] NVBVGMKBMCZMFG-UHFFFAOYSA-N 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 239000011231 conductive filler Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- SJJCABYOVIHNPZ-UHFFFAOYSA-N cyclohexyl-dimethoxy-methylsilane Chemical compound CO[Si](C)(OC)C1CCCCC1 SJJCABYOVIHNPZ-UHFFFAOYSA-N 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- ZZNQQQWFKKTOSD-UHFFFAOYSA-N diethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OCC)(OCC)C1=CC=CC=C1 ZZNQQQWFKKTOSD-UHFFFAOYSA-N 0.000 description 1
- GAURFLBIDLSLQU-UHFFFAOYSA-N diethoxy(methyl)silicon Chemical compound CCO[Si](C)OCC GAURFLBIDLSLQU-UHFFFAOYSA-N 0.000 description 1
- PKTOVQRKCNPVKY-UHFFFAOYSA-N dimethoxy(methyl)silicon Chemical compound CO[Si](C)OC PKTOVQRKCNPVKY-UHFFFAOYSA-N 0.000 description 1
- YYLGKUPAFFKGRQ-UHFFFAOYSA-N dimethyldiethoxysilane Chemical compound CCO[Si](C)(C)OCC YYLGKUPAFFKGRQ-UHFFFAOYSA-N 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- ZLNAFSPCNATQPQ-UHFFFAOYSA-N ethenyl-dimethoxy-methylsilane Chemical compound CO[Si](C)(OC)C=C ZLNAFSPCNATQPQ-UHFFFAOYSA-N 0.000 description 1
- JEWCZPTVOYXPGG-UHFFFAOYSA-N ethenyl-ethoxy-dimethylsilane Chemical compound CCO[Si](C)(C)C=C JEWCZPTVOYXPGG-UHFFFAOYSA-N 0.000 description 1
- NUFVQEIPPHHQCK-UHFFFAOYSA-N ethenyl-methoxy-dimethylsilane Chemical compound CO[Si](C)(C)C=C NUFVQEIPPHHQCK-UHFFFAOYSA-N 0.000 description 1
- RSIHJDGMBDPTIM-UHFFFAOYSA-N ethoxy(trimethyl)silane Chemical compound CCO[Si](C)(C)C RSIHJDGMBDPTIM-UHFFFAOYSA-N 0.000 description 1
- ZVJXKUWNRVOUTI-UHFFFAOYSA-N ethoxy(triphenyl)silane Chemical compound C=1C=CC=CC=1[Si](C=1C=CC=CC=1)(OCC)C1=CC=CC=C1 ZVJXKUWNRVOUTI-UHFFFAOYSA-N 0.000 description 1
- SBRXLTRZCJVAPH-UHFFFAOYSA-N ethyl(trimethoxy)silane Chemical compound CC[Si](OC)(OC)OC SBRXLTRZCJVAPH-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 125000006038 hexenyl group Chemical group 0.000 description 1
- CZWLNMOIEMTDJY-UHFFFAOYSA-N hexyl(trimethoxy)silane Chemical compound CCCCCC[Si](OC)(OC)OC CZWLNMOIEMTDJY-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- BKXVGDZNDSIUAI-UHFFFAOYSA-N methoxy(triphenyl)silane Chemical compound C=1C=CC=CC=1[Si](C=1C=CC=CC=1)(OC)C1=CC=CC=C1 BKXVGDZNDSIUAI-UHFFFAOYSA-N 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- KBJFYLLAMSZSOG-UHFFFAOYSA-N n-(3-trimethoxysilylpropyl)aniline Chemical compound CO[Si](OC)(OC)CCCNC1=CC=CC=C1 KBJFYLLAMSZSOG-UHFFFAOYSA-N 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 229920006136 organohydrogenpolysiloxane Polymers 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 125000002255 pentenyl group Chemical group C(=CCCC)* 0.000 description 1
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- LPNYRYFBWFDTMA-UHFFFAOYSA-N potassium tert-butoxide Chemical compound [K+].CC(C)(C)[O-] LPNYRYFBWFDTMA-UHFFFAOYSA-N 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- DENFJSAFJTVPJR-UHFFFAOYSA-N triethoxy(ethyl)silane Chemical compound CCO[Si](CC)(OCC)OCC DENFJSAFJTVPJR-UHFFFAOYSA-N 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
- NMEPHPOFYLLFTK-UHFFFAOYSA-N trimethoxy(octyl)silane Chemical compound CCCCCCCC[Si](OC)(OC)OC NMEPHPOFYLLFTK-UHFFFAOYSA-N 0.000 description 1
- UHUUYVZLXJHWDV-UHFFFAOYSA-N trimethyl(methylsilyloxy)silane Chemical compound C[SiH2]O[Si](C)(C)C UHUUYVZLXJHWDV-UHFFFAOYSA-N 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/54—Silicon-containing compounds
- C08K5/544—Silicon-containing compounds containing nitrogen
- C08K5/5465—Silicon-containing compounds containing nitrogen containing at least one C=N bond
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/12—Polysiloxanes containing silicon bound to hydrogen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/54—Silicon-containing compounds
- C08K5/544—Silicon-containing compounds containing nitrogen
- C08K5/5455—Silicon-containing compounds containing nitrogen containing at least one group
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/56—Organo-metallic compounds, i.e. organic compounds containing a metal-to-carbon bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
Definitions
- the present invention relates to a curable composition for an optical semiconductor device used for sealing an optical semiconductor element or forming a lens above the optical semiconductor element in an optical semiconductor device.
- the present invention also relates to an optical semiconductor device using the curable composition for optical semiconductor devices.
- An optical semiconductor device such as a light emitting diode (LED) device has low power consumption and long life. Moreover, the optical semiconductor device can be used even in a harsh environment. Accordingly, optical semiconductor devices are used in a wide range of applications such as mobile phone backlights, liquid crystal television backlights, automobile lamps, lighting fixtures, and signboards.
- LED light emitting diode
- optical semiconductor element for example, LED
- LED which is a light emitting element used in an optical semiconductor device
- Patent Document 1 discloses an epoxy resin material containing hydrogenated bisphenol A glycidyl ether, an alicyclic epoxy monomer, and a latent catalyst as a sealant for an optical semiconductor device. This epoxy resin material is cured by thermal cationic polymerization.
- a lens may be formed using a lens material for an optical semiconductor device in order to control the light emission direction or to prevent the front luminance from becoming too high.
- the lens is disposed on the surface of the sealant, for example.
- the lens may be disposed on the optical semiconductor element or so as to cover the optical semiconductor element.
- Patent Document 2 includes (A) an organopolysiloxane having two or more aliphatic unsaturated bonds and (B) two or more hydrogen atoms bonded to silicon atoms as the lens material for an optical semiconductor device.
- a lens material including an organohydrogenpolysiloxane, (C) a platinum group metal catalyst, and (D) a release agent is disclosed.
- Patent Document 3 (1) optical transparency that is 90% or higher transmittance for light having a wavelength of 400 nm with an optical path length of 1.0 cm, and (2) after being exposed to 150 ° C. for 6 hours. , Thermal stability retaining 90% or higher transmission for light of 400 nm wavelength with 1.0 cm path length, and (3) thermal stability having a refractive index of 1.545 or higher at 589 nm A polysiloxane composition is disclosed.
- Patent Document 4 discloses an LED encapsulant composition
- an LED encapsulant composition comprising (1) at least one polyorganosiloxane and an effective amount of (2) an addition reaction catalyst, which is cured to form a resin.
- the average composition formula of the mixture of (1) at least one polyorganosiloxane is (R 1 R 2 R 3 SiO 1/2 ) M ⁇ (R 4 R 5 SiO 2/2 ) D ⁇ (R 6 SiO 3 / 2 ) T ⁇ (SiO 4/2 ) Q
- the light intensity (brightness) emitted from the optical semiconductor device may gradually decrease.
- An object of the present invention is to provide a curable composition for an optical semiconductor device capable of improving the pot life of the composition, and an optical semiconductor device using the curable composition for an optical semiconductor device.
- a first organopolysiloxane having two or more alkenyl groups a second organopolysiloxane having two or more hydrogen atoms bonded to a silicon atom, a hydrosilylation reaction catalyst, And a first silane compound having a ureido group or an isocyanate group, and a curable composition for an optical semiconductor device.
- the curable composition for optical semiconductor devices according to the present invention is preferably an encapsulant for optical semiconductor devices or a lens material for optical semiconductor devices.
- the first silane compound has a ureido group.
- the first silane compound is a first silane compound represented by the following formula (S1) or the following formula (S2).
- X1 represents an alkoxy group
- X2 and X3 each represents an alkoxy group or a hydrocarbon group having 1 to 8 carbon atoms
- R4 is a single bond directly bonding a nitrogen atom and a silicon atom. Or a hydrocarbon group having 1 to 8 carbon atoms.
- X1 represents an alkoxy group
- X2 and X3 each represents an alkoxy group or a hydrocarbon group having 1 to 8 carbon atoms
- R4 represents a single bond directly connecting a nitrogen atom and a silicon atom. It represents a bond or a hydrocarbon group having 1 to 8 carbon atoms.
- the first silane compound is a first silane compound represented by the above formula (S1).
- the first silane compound represented by the above formula (S1) is a first silane compound represented by the following formula (S1-1). Silane compound.
- R1 to R3 each represent a hydrocarbon group having 1 to 8 carbon atoms
- R4 represents a single bond directly bonding a nitrogen atom and a silicon atom, or 1 to 8 hydrocarbon groups are represented.
- the number average molecular weight of the first organopolysiloxane is 500 or more and 200,000 or less, and the number average of the second organopolysiloxane.
- the molecular weight is 500 or more and 20000 or less.
- a second silane compound having an epoxy group, a vinyl group, or a (meth) acryloyl group is further included.
- the second silane compound is 3-glycidoxypropyltrimethoxysilane, 2- (3,4-epoxycyclohexyl) ethyl. Trimethoxysilane, vinyltrimethoxysilane or 3- (meth) acryloxypropyltrimethoxysilane.
- the content of the second silane compound is 0 with respect to a total of 100 parts by weight of the first and second organopolysiloxanes. 0.01 parts by weight or more and 5 parts by weight or less.
- the first organopolysiloxane does not have a hydrogen atom bonded to a silicon atom
- the second organopolysiloxane is alkenyl. Has a group.
- the first organopolysiloxane has a methyl group represented by the following formula (1A) and bonded to an alkenyl group and a silicon atom.
- a second organopolysiloxane which is a first organopolysiloxane and the second organopolysiloxane is represented by the following formula (51A) and has a hydrogen atom bonded to a silicon atom and a methyl group bonded to a silicon atom.
- siloxane or the first organopolysiloxane is represented by the following formula (1B), is a first organopolysiloxane having an aryl group and an alkenyl group, and the second organopolysiloxane is A second organopolysiloxane represented by the following formula (51B) and having a hydrogen atom bonded to an aryl group and a silicon atom.
- R1 to R6 each represents at least one alkenyl group, at least one represents a methyl group, and R1 to R6 other than the alkenyl group and the methyl group represent a hydrocarbon group having 2 to 8 carbon atoms. .
- R51 to R56 each represents at least one hydrogen atom, at least one represents a methyl group, and R51 to R56 other than the hydrogen atom and the methyl group are hydrocarbon groups having 2 to 8 carbon atoms. Represents.
- R51 to R56 represents an aryl group
- R51 to R56 other than the aryl group and the hydrogen atom are carbon atoms having 1 to 8 carbon atoms. Represents a hydrogen group.
- the first organopolysiloxane represented by the above formula (1A) or the above formula (1B) is a hydrogen atom bonded to a silicon atom.
- the second organopolysiloxane represented by the formula (51A) or the formula (51B) has an alkenyl group, and in the formula (51A), at least one of R51 to R56 is Represents a hydrogen atom, at least one represents a methyl group, at least one represents an alkenyl group, R51 to R56 other than a hydrogen atom, a methyl group and an alkenyl group represent a hydrocarbon group having 2 to 8 carbon atoms;
- at least one of R51 to R56 represents an aryl group, at least one represents a hydrogen atom, at least one represents an alkenyl group, an aryl group, a hydrogen atom and an alkyl group.
- the second organopolysiloxane represented by the above formula (51A) or the above formula (51B) is represented by the following formula (51-a). ).
- R52 and R53 each represent a hydrocarbon group having 1 to 8 carbon atoms.
- first organopolysiloxane is represented by the above formula (1A) and the second organopolysiloxane is represented by the above formula (51A). It is also preferred that the first organopolysiloxane is represented by the formula (1B) and the second organopolysiloxane is represented by the formula (51B).
- the content of the second organopolysiloxane is 10 parts by weight or more with respect to 100 parts by weight of the first organopolysiloxane. 400 parts by weight or less, and the content of the catalyst for hydrosilylation reaction in the curable composition is 0.01 ppm or more and 1000 ppm or less by weight unit of metal atom,
- the content of the first silane compound is 0.01 parts by weight or more and 5 parts by weight or less with respect to a total of 100 parts by weight of siloxane.
- the curable composition for optical semiconductor devices according to the present invention includes a first organopolysiloxane having an alkenyl group, a second organopolysiloxane having a hydrogen atom bonded to a silicon atom, a hydrosilylation reaction catalyst, Even if the optical semiconductor device using the curable composition for optical semiconductor devices is used in a harsh environment under high temperature and high humidity, since it contains the first silane compound having a ureido group or an isocyanate group The peeling from the adhesion target object of the hardened
- FIG. 1 is a front sectional view showing an optical semiconductor device according to the first embodiment of the present invention.
- FIG. 2 is a front sectional view showing an optical semiconductor device according to the second embodiment of the present invention.
- FIG. 3 is a front sectional view showing an optical semiconductor device according to the third embodiment of the present invention.
- the curable composition for optical semiconductor devices includes a first organopolysiloxane having an alkenyl group, a second organopolysiloxane having a hydrogen atom bonded to a silicon atom, a hydrosilylation reaction catalyst, And a first silane compound having a ureido group or an isocyanate group.
- the optical semiconductor device using the curable composition for optical semiconductor devices is cured even when used in harsh environments under high temperature and high humidity.
- cured can be suppressed.
- the curable composition when the optical semiconductor device is sealed using the curable composition for optical semiconductor devices according to the present invention or a lens is formed above the optical semiconductor device, the curable composition is cured. It becomes difficult for the object to peel from the object to be bonded.
- the material of a package such as a sealant or a housing material in contact with a lens may be polyphthalamide (PPA).
- PPA polyphthalamide
- an electrode plated with silver may be formed on the back surface of the light emitting element.
- the present inventors do not sufficiently increase the adhesiveness of the cured product to the object to be bonded. I found out. In particular, in the optical semiconductor device used for the curable composition for optical semiconductor devices, it is difficult to sufficiently enhance the adhesion of the cured product to the object to be bonded.
- the inventor has a ureido group or an isocyanate group together with a first organopolysiloxane having an alkenyl group, a second organopolysiloxane having a hydrogen atom bonded to a silicon atom, and a catalyst for hydrosilylation reaction. It has been found that by adopting a composition further containing the first silane compound, the adhesion of the cured product to the object to be bonded can be sufficiently enhanced.
- the present inventors use the first silane compound having a ureido group out of the first silane compound having a ureido group and the first silane compound having an isocyanate group, so that the cured product can be bonded. It has been found that the adhesion to objects is even higher.
- the present inventors provide a ureido group in a composition comprising a first organopolysiloxane having an alkenyl group, a second organopolysiloxane having a hydrogen atom bonded to a silicon atom, and a catalyst for hydrosilylation reaction.
- a first silane compound having an isocyanate group is used, the viscosity of the curable composition for optical semiconductor devices hardly changes, and the pot life of the curable composition for optical semiconductor devices is improved.
- a curable composition for an optical semiconductor device comprising a first organopolysiloxane having an alkenyl group, a second organopolysiloxane having a hydrogen atom bonded to a silicon atom, and a hydrosilylation reaction catalyst is also obtained at room temperature.
- the polymerization reaction proceeds slowly. For this reason, the viscosity of the curable composition gradually increases even at room temperature. Therefore, the first organopolysiloxane having an alkenyl group and the second organopolysiloxane having a hydrogen atom bonded to a silicon atom are provided as two separate liquids (first and second liquids). There is. These two liquids are mixed and used immediately before use by the user.
- the hydrosilylation reaction catalyst is contained in at least one of the first liquid containing the first organopolysiloxane and the second liquid containing the second organopolysiloxane.
- the reaction starts when the two liquids are mixed, so that the viscosity increases.
- the discharge amount when dispensing the curable composition changes, and it becomes difficult to maintain a certain shape.
- the sealing agent may be insufficiently filled or the lens shape may be deteriorated.
- the ratio ( ⁇ 1 / ⁇ 2) of the curable composition (the curable composition immediately after preparation) to the viscosity ⁇ 2 is preferably 2 or less, more preferably 1.5 or less, and still more preferably 1.3 or less.
- the ratio ( ⁇ 1 / ⁇ 2) is generally 1 or more, but may be 0.7 or more, for example, or 0.8 or more.
- the viscosity change of the curable composition is small, that is, if the pot life of the curable composition is good, it is easy to manufacture an optical semiconductor device of a certain quality under a certain production condition.
- the first organopolysiloxane is represented by the formula (1A) and is a first organopolysiloxane having an alkenyl group and a methyl group bonded to a silicon atom, or represented by the formula (1B) and an aryl
- a first organopolysiloxane having a group and an alkenyl group is preferred.
- a first organopolysiloxane different from the first organopolysiloxane represented by the formula (1A) or the formula (1B) may be used.
- the second organopolysiloxane has an alkenyl group
- the first organopolysiloxane preferably does not have a hydrogen atom bonded to a silicon atom.
- the first organopolysiloxane preferably does not have a hydrogen atom bonded to a silicon atom.
- the second organopolysiloxane is a second organopolysiloxane represented by the formula (51A) and having a hydrogen atom bonded to a silicon atom and a methyl group bonded to a silicon atom, or the formula (51B) And is preferably a second organopolysiloxane having an aryl group and a hydrogen atom bonded to a silicon atom.
- a second organopolysiloxane different from the second organopolysiloxane represented by the formula (51A) or the formula (51B) may be used.
- the organopolysiloxane represented by the formula (1A) is a first organopolysiloxane having a methyl group bonded to an alkenyl group and a silicon atom
- the second organopolysiloxane is represented by the formula (51A)
- a second organopolysiloxane having a hydrogen atom bonded to a silicon atom and a methyl group bonded to a silicon atom, or the first organopolysiloxane is represented by the formula (1B) and is aryl
- the first organopolysiloxane having a group and an alkenyl group, and the second organopolysiloxane is represented by the formula (51B). It is preferred aryl group and a silicon atom is
- a cured product of a conventional curable composition for optical semiconductor devices when used in a harsh environment such as a temperature cycle that repeatedly receives heating and cooling, the cured product is cracked or the cured product is a housing material. It may peel off from etc.
- a cured product of a conventional curable composition for optical semiconductor devices has a problem that heat resistance is low.
- the first organopolysiloxane is a first organopolysiloxane represented by the formula (1A) and having an alkenyl group and a methyl group bonded to a silicon atom.
- the second organopolysiloxane is preferably the second organopolysiloxane represented by the formula (51A) and having a hydrogen atom bonded to a silicon atom and a methyl group bonded to a silicon atom.
- the content ratios of methyl groups bonded to silicon atoms in the first organopolysiloxane and the second organopolysiloxane are each 80 mol% or more. preferable.
- the content ratio of the methyl group bonded to the silicon atom is represented by the following formula (X).
- the “functional group” means a group directly bonded to a silicon atom in the first organopolysiloxane or the second organopolysiloxane.
- “average molecular weight of functional groups” means the sum of “average number of functional groups ⁇ functional group molecular weight” of each functional group. The same applies to “functional group” and “average molecular weight of functional group” in the following formula (Y).
- a silver-plated electrode may be formed on the back surface of the light emitting element in order to reflect the light reaching the back side of the light emitting element. If a crack occurs in the sealant or the lens, or the sealant is peeled off from the housing material, the silver-plated electrode is exposed to the atmosphere or easily exposed to the atmosphere. As a result, the silver plating may be discolored by a corrosive gas such as hydrogen sulfide gas or sulfurous acid gas present in the atmosphere. When the color of the electrode changes, the reflectance decreases, which causes a problem that the brightness of the light emitted from the light emitting element decreases.
- a corrosive gas such as hydrogen sulfide gas or sulfurous acid gas
- the sealant or lens formed by the cured product of the curable composition has a high gas barrier property against corrosive gas, thereby suppressing discoloration of silver plating and lowering the brightness of light emitted from the light emitting element. Can be suppressed.
- the first organopolysiloxane is the first organopolysiloxane represented by the formula (1B) and having an aryl group and an alkenyl group
- the first The second organopolysiloxane represented by the formula (51B) is preferably a second organopolysiloxane having an aryl group and a hydrogen atom bonded to a silicon atom.
- the content ratios of aryl groups in the first organopolysiloxane and the second organopolysiloxane are 30 mol% or more and 85 mol% or less, respectively. preferable.
- the content ratio of the aryl group is represented by the following formula (Y).
- aryl group (mol%) ⁇ (average number of aryl groups contained in one molecule of the first organopolysiloxane or the second organopolysiloxane ⁇ molecular weight of the aryl group) / (the first The average number of functional groups bonded to silicon atoms contained in one molecule of the second organopolysiloxane or the average molecular weight of the functional groups) ⁇ ⁇ 100 Formula (Y)
- the content ratio of the aryl group indicates the content ratio of the phenyl group.
- an optical semiconductor device using the above-described curable composition for optical semiconductor devices is provided. That is, according to a broad aspect of the present invention, an optical semiconductor element and a sealing agent disposed so as to seal the optical semiconductor element or a lens disposed on the optical semiconductor element are provided, and the sealing is performed.
- An optical semiconductor device is provided in which the stopper or the lens is formed by curing a curable composition for an optical semiconductor device.
- the curable composition for an optical semiconductor device used in the optical semiconductor device includes a first organopolysiloxane having two or more alkenyl groups and a second organopolysiloxane having two or more hydrogen atoms bonded to silicon atoms. And a hydrosilylation reaction catalyst and a first silane compound having a ureido group or an isocyanate group.
- the cured product obtained by curing the curable composition can be prevented from being peeled off from the adhesion target, and further cured for an optical semiconductor device. Since the pot life of the composition is good, a homogeneous optical semiconductor device can be provided.
- the first organopolysiloxane contained in the curable composition for optical semiconductor devices according to the present invention has two or more alkenyl groups.
- the alkenyl group is preferably directly bonded to the silicon atom.
- the carbon atom in the carbon-carbon double bond of the alkenyl group may be bonded to the silicon atom, and the carbon atom different from the carbon atom in the carbon-carbon double bond of the alkenyl group is bonded to the silicon atom. It may be bonded.
- As for said 1st organopolysiloxane only 1 type may be used and 2 or more types may be used together.
- the first organopolysiloxane is represented by the following formula (1A), and includes a first organopolysiloxane having an alkenyl group and a methyl group bonded to a silicon atom.
- Siloxane hereinafter sometimes referred to as first organopolysiloxane A
- the first organopolysiloxane A is preferably a first organopolysiloxane which does not have a hydrogen atom bonded to a silicon atom but has an alkenyl group and a methyl group bonded to a silicon atom.
- R1 to R6 each represents at least one alkenyl group, at least one represents a methyl group, and R1 to R6 other than the alkenyl group and the methyl group represent a hydrocarbon group having 2 to 8 carbon atoms. .
- the first organopolysiloxane is represented by the following formula (1B) and has a first organopolysiloxane having an aryl group and an alkenyl group (hereinafter referred to as the first organopolysiloxane). 1 may be referred to as organopolysiloxane B).
- the first organopolysiloxane B is preferably a first organopolysiloxane which does not have a hydrogen atom bonded to a silicon atom and has an aryl group and an alkenyl group.
- the aryl group include an unsubstituted phenyl group and a substituted phenyl group.
- the structural unit represented by (R4R5SiO 2/2 ) and the structural unit represented by (R6SiO 3/2 ) each have an alkoxy group. It may have a hydroxy group.
- the above formula (1A) and the above formula (1B) show an average composition formula.
- the hydrocarbon group in the above formula (1A) and the above formula (1B) may be linear or branched.
- R1 to R6 in the above formula (1A) and the above formula (1B) may be the same or different.
- the oxygen atom part in the structural unit represented by (R4R5SiO 2/2 ) and the oxygen atom part in the structural unit represented by (R6SiO 3/2 ) are respectively siloxane.
- An oxygen atom part forming a bond, an oxygen atom part of an alkoxy group, or an oxygen atom part of a hydroxy group is shown.
- the content of alkoxy groups is small, and the content of hydroxy groups is also small.
- an organosilicon compound such as an alkoxysilane compound is hydrolyzed and polycondensed to obtain a first organopolysiloxane
- most of the alkoxy groups and hydroxy groups are converted into a partial skeleton of siloxane bonds. It is to be done. That is, most of oxygen atoms of the alkoxy group and oxygen atoms of the hydroxy group are converted into oxygen atoms forming a siloxane bond.
- alkenyl group examples include vinyl group, allyl group, butenyl group, pentenyl group, and hexenyl group.
- the alkenyl group in the first organopolysiloxane and the alkenyl group in the above formula (1A) and the above formula (1B) are preferably vinyl groups or allyl groups. More preferably, it is a group.
- the first organopolysiloxane preferably has a vinyl group.
- the hydrocarbon group having 2 to 8 carbon atoms in the above formula (1A) is not particularly limited, and examples thereof include ethyl group, n-propyl group, n-butyl group, n-pentyl group, n-hexyl group, and n-heptyl. Group, n-octyl group, isopropyl group, isobutyl group, sec-butyl group, t-butyl group, isopentyl group, neopentyl group, t-pentyl group, isohexyl group, cyclohexyl group and aryl group.
- Examples of the hydrocarbon group having 1 to 8 carbon atoms in the above formula (1B) include the same groups as the hydrocarbon group having 2 to 8 carbon atoms in the above formula (1A), and further includes a methyl group.
- the first organopolysiloxane contains one vinyl group and two carbon atoms per silicon atom. It preferably contains a structural unit bonded to a hydrocarbon group of 1 to 8 (methyl group or hydrocarbon group of 2 to 8 carbon atoms).
- (R1R2R3SiO 1 / The structural unit represented by 2 ) includes a structural unit in which R1 represents a vinyl group, and R2 and R3 represent a hydrocarbon group having 1 to 8 carbon atoms (methyl group or hydrocarbon group having 2 to 8 carbon atoms). It is preferable.
- the structural unit represented by (R1R2R3SiO 1/2 ) may contain only the structural unit represented by the following formula (1-a), and the structural unit represented by the following formula (1-a) and And a structural unit other than the structural unit represented by the formula (1-a).
- the presence of the structural unit represented by the following formula (1-a) allows a vinyl group to be present at the terminal, and the presence of the vinyl group at the terminal increases the opportunity for reaction, and the curability of the curable composition. Can be further increased.
- the terminal oxygen atom generally forms a siloxane bond with an adjacent silicon atom, and shares an oxygen atom with the adjacent structural unit. Therefore, one oxygen atom at the terminal is defined as “O 1/2 ”.
- R2 and R3 each represent a hydrocarbon group having 1 to 8 carbon atoms.
- the content ratio of methyl groups bonded to silicon atoms in the first organopolysiloxane A is preferably 80 mol% or more.
- the content ratio of the methyl group bonded to the silicon atom is obtained from the following formula (X1).
- the content ratio of the methyl group is 80 mol% or more, the heat resistance of the cured product becomes considerably high, and even if the optical semiconductor device is used in a harsh environment under high temperature and high humidity, Is difficult to decrease and discoloration of the cured product is difficult to occur.
- the content ratio of the methyl group bonded to the silicon atom in the first organopolysiloxane A is preferably 85 mol% or more, preferably 99.9 mol% or less, more preferably 99 mol% or less, and still more preferably 98 mol%. It is less than mol%.
- the content ratio of the methyl group is not less than the above lower limit, the heat resistance of the cured product is further enhanced.
- the content ratio of the methyl group is not more than the above upper limit, alkenyl groups can be sufficiently introduced, and it is easy to improve the curability of the curable composition.
- the content ratio of the aryl group in the first organopolysiloxane B is preferably 30 mol% or more, and preferably 85 mol% or less.
- the content ratio of this aryl group is calculated
- the content ratio of the aryl group is 30 mol% or more, the gas barrier property of the cured product is further enhanced, and cracks and peeling are less likely to occur in the cured product.
- the content ratio of the aryl group is 85 mol% or less, peeling of the cured product is more difficult to occur.
- the content ratio of the aryl group in the first organopolysiloxane B is more preferably 35 mol% or more.
- the content ratio of the aryl group in the first organopolysiloxane B is more preferably 80 mol% or less, still more preferably 75 mol% or less, and particularly preferably 70 mol%. Hereinafter, it is most preferably 65 mol% or less.
- the first organopolysiloxane A preferably has an aryl group.
- the aryl group include an unsubstituted phenyl group and a substituted phenyl group.
- the content ratio of the aryl group in the first organopolysiloxane A is preferably 0.5 mol% or more, preferably 10 mol% or less, more preferably 5 mol% or less.
- the heat resistance of the cured product is further improved.
- the structural unit represented by (R4R5SiO 2/2 ) (hereinafter also referred to as a bifunctional structural unit) has the following formula ( The structure represented by 1-2), that is, a structure in which one of the oxygen atoms bonded to the silicon atom in the bifunctional structural unit forms a hydroxy group or an alkoxy group may be included.
- the structural unit represented by (R4R5SiO 2/2 ) includes a portion surrounded by a broken line of the structural unit represented by the following formula (1-b), and is further represented by the following formula (1-2-b). A portion surrounded by a broken line of the structural unit may be included. That is, a structural unit having a group represented by R4 and R5 and having an alkoxy group or a hydroxy group remaining at the terminal is also included in the structural unit represented by (R4R5SiO 2/2 ).
- the structural unit represented by (R4R5SiO 2/2 ) is a broken line of the structural unit represented by the following formula (1-b) The part enclosed by is shown.
- the structural unit represented by (R4R5SiO 2/2 ) having the remaining alkoxy group or hydroxy group has the following formula: A portion surrounded by a broken line in the structural unit represented by (1-2-b) is shown.
- the oxygen atom in the Si—O—Si bond forms a siloxane bond with the adjacent silicon atom, and the adjacent structural unit and oxygen atom Sharing. Accordingly, one oxygen atom in the Si—O—Si bond is defined as “O 1/2 ”.
- X represents OH or OR
- OR represents a linear or branched alkoxy group having 1 to 4 carbon atoms.
- R4 and R5 in formula (1-b), formula (1-2), and formula (1-2-b) are the same groups as R4 and R5 in formula (1A) and formula (1B). It is.
- the structural unit represented by (R6SiO 3/2 ) (hereinafter also referred to as trifunctional structural unit) has the following formula ( 1-3) or a structure represented by formula (1-4), that is, a structure in which two oxygen atoms bonded to a silicon atom in a trifunctional structural unit each constitute a hydroxy group or an alkoxy group, or a trifunctional
- One of the oxygen atoms bonded to the silicon atom in the structural unit may include a structure constituting a hydroxy group or an alkoxy group.
- the structural unit represented by (R6SiO 3/2 ) includes a portion surrounded by a broken line of the structural unit represented by the following formula (1-c), and further includes the following formula (1-3-c) or formula ( A portion surrounded by a broken line of the structural unit represented by 1-4-4-c) may be included. That is, a structural unit having a group represented by R6 and having an alkoxy group or a hydroxy group remaining at the terminal is also included in the structural unit represented by (R6SiO 3/2 ).
- R6 in the above formula (1-c), formula (1-3), formula (1-3-c), formula (1-4) and formula (1-4-c) represents the above formula (1A) and It is the same group as R6 in the above formula (1B).
- the linear or branched alkoxy group having 1 to 4 carbon atoms is not particularly limited.
- the lower limit of a / (a + b + c) is 0, and the upper limit is 0.30.
- a / (a + b + c) is less than or equal to the above upper limit, the heat resistance of the cured product is further increased, and peeling of the cured product can be further suppressed.
- a / (a + b + c) becomes like this. Preferably it is 0.25 or less, More preferably, it is 0.20 or less.
- the lower limit of b / (a + b + c) is 0.70, and the upper limit is 1.0.
- b / (a + b + c) is not less than the above lower limit, the cured product does not become too hard, and cracks hardly occur in the cured product.
- b / (a + b + c) is preferably 0.75 or more, more preferably 0.80 or more.
- the lower limit of c / (a + b + c) is 0, and the upper limit is 0.10.
- c / (a + b + c) is not more than the above upper limit, it is easy to maintain an appropriate viscosity of the curable composition, and the adhesiveness of the cured product is further enhanced.
- c / (a + b + c) is preferably 0.05 or less.
- the structural unit of (R6SiO 3/2 ) does not exist in the above formula (1A).
- C / (a + b + c) in the above formula (1A) is preferably 0. That is, the first organopolysiloxane represented by the above formula (1A) is preferably the first organopolysiloxane represented by the following formula (1Aa). As a result, cracks are less likely to occur in the cured product, and the cured product is more difficult to peel from the housing material or the like.
- a / (a + b) is preferably 0.25 or less, more preferably 0.20 or less, and still more preferably 0.15 or less.
- b / (a + b) is preferably 0.75 or more, more preferably 0.80 or more, and further preferably 0.85 or more.
- a / (a + b + c) is 0 or more and 0.50 or less.
- a / (a + b + c) is less than or equal to the above upper limit, the heat resistance of the cured product is further increased, and peeling of the cured product can be further suppressed.
- a / (a + b + c) is preferably 0.45 or less, more preferably 0.40 or less.
- b / (a + b + c) is 0.40 or more and 1.0 or less.
- b / (a + b + c) is not less than the above lower limit, the cured product does not become too hard, and cracks hardly occur in the cured product.
- b / (a + b + c) is preferably 0.50 or more.
- c / (a + b + c) is 0 or more and 0.50 or less.
- c / (a + b + c) is not more than the above upper limit, it is easy to maintain an appropriate viscosity of the curable composition, and the adhesiveness of the cured product is further enhanced.
- c / (a + b + c) is preferably 0.45 or less, more preferably 0.40 or less, and still more preferably 0.35 or less.
- the structural unit of (R6SiO 3/2 ) does not exist in the above formula (1B).
- C / (a + b + c) in the above formula (1B) is preferably 0. That is, the first organopolysiloxane represented by the above formula (1B) is preferably the first organopolysiloxane represented by the following formula (1Bb). As a result, cracks are less likely to occur in the cured product, and peeling of the cured product is further less likely to occur.
- a / (a + b) in the above formula (1Bb) is preferably 0.45 or less, more preferably 0.40 or less.
- b / (a + b) is preferably 0.55 or more, more preferably 0.60 or more.
- NMR si-nuclear magnetic resonance analysis
- TMS tetramethylsilane
- Each peak corresponding to the structural unit represented by (R4R5SiO 2/2 ) and the bifunctional structural unit of the above formula (1-2) appears in the vicinity of ⁇ 10 to ⁇ 50 ppm, and the above formula (1A) and the above formula (1B )
- the ratio of each structural unit in the above formula (1A) and the above formula (1B) can be measured by measuring 29 Si-NMR and comparing the peak areas of the respective signals.
- the second organopolysiloxane contained in the curable composition for optical semiconductor devices according to the present invention has two or more hydrogen atoms bonded to silicon atoms.
- the hydrogen atom is directly bonded to the silicon atom.
- As for said 2nd organopolysiloxane only 1 type may be used and 2 or more types may be used together.
- the second organopolysiloxane may contain a structural unit in which three oxygen atoms are bonded to one silicon atom.
- one hydrogen atom may be bonded to the silicon atom to which three oxygen atoms are bonded, and one hydrocarbon group having 1 to 8 carbon atoms (methyl group or hydrocarbon having 2 to 8 carbon atoms). Group) may be bonded.
- the second organopolysiloxane is represented by the following formula (51A) and has a hydrogen atom bonded to a silicon atom and a methyl group bonded to the silicon atom.
- a second organopolysiloxane (hereinafter sometimes referred to as a second organopolysiloxane A) is preferred.
- R51 to R56 each represents at least one hydrogen atom, at least one represents a methyl group, and R51 to R56 other than the hydrogen atom and the methyl group are hydrocarbon groups having 2 to 8 carbon atoms. Represents.
- the second organopolysiloxane is represented by the following formula (51B), and includes a second organopolysiloxane having an aryl group and a hydrogen atom bonded to a silicon atom.
- Siloxane hereinafter sometimes referred to as second organopolysiloxane B
- the aryl group include an unsubstituted phenyl group and a substituted phenyl group.
- R51 to R56 represents an aryl group
- R51 to R56 other than the aryl group and the hydrogen atom are carbon atoms having 1 to 8 carbon atoms. Represents a hydrogen group.
- the structural unit represented by (R54R55SiO 2/2 ) and the structural unit represented by (R56SiO 3/2 ) each have an alkoxy group. It may have a hydroxy group.
- the above formula (51A) and the above formula (51B) show the average composition formula.
- the hydrocarbon group in the above formula (51A) and the above formula (51B) may be linear or branched.
- R51 to R56 in the above formula (51A) and the above formula (51B) may be the same or different.
- the oxygen atom part in the structural unit represented by (R54R55SiO 2/2 ) and the oxygen atom part in the structural unit represented by (R56SiO 3/2 ) are respectively siloxane.
- An oxygen atom part forming a bond, an oxygen atom part of an alkoxy group, or an oxygen atom part of a hydroxy group is shown.
- the hydrocarbon group having 2 to 8 carbon atoms in the formula (51A) is not particularly limited, and examples thereof include an ethyl group, an n-propyl group, an n-butyl group, an n-pentyl group, an n-hexyl group, and an n-heptyl group.
- Examples of the hydrocarbon group having 1 to 8 carbon atoms in the above formula (51B) include the same groups as the hydrocarbon group having 2 to 8 carbon atoms in the above formula (51A), and further includes a methyl group.
- the second organopolysiloxane contains one hydrogen atom and two carbon atoms in one silicon atom. It preferably contains a structural unit bonded to a hydrocarbon group of 1 to 8 (methyl group or hydrocarbon group of 2 to 8 carbon atoms).
- (R51R52R53SiO 1 / The structural unit represented by 2 ) includes a structural unit in which R51 represents a hydrogen atom, and R52 and R53 represent a hydrocarbon group having 1 to 8 carbon atoms (a methyl group or a hydrocarbon group having 2 to 8 carbon atoms). It is preferable.
- the second organopolysiloxane has a structural unit represented by (HR52R53SiO 1/2 ). In other words, it preferably has a structural unit represented by the following formula (51-a).
- the structural unit represented by (R51R52R53SiO 1/2 ) may contain only the structural unit represented by the following formula (51-a), and the structural unit represented by the following formula (51-a) And a structural unit other than the structural unit represented by the formula (51-a). Due to the presence of the structural unit represented by the following formula (51-a), a hydrogen atom can be present at the terminal.
- the terminal oxygen atom generally forms a siloxane bond with an adjacent silicon atom, and shares an oxygen atom with the adjacent structural unit. Therefore, one oxygen atom at the terminal is defined as “O 1/2 ”.
- R52 and R53 each represent a methyl group or a hydrocarbon group having 2 to 8 carbon atoms.
- the first organopolysiloxane is a structural unit represented by the above formula (1-a). It is particularly preferable that the second organopolysiloxane has a structural unit represented by the above formula (51-a).
- the second organopolysiloxane preferably has an alkenyl group, and more preferably has a vinyl group.
- at least one of R51 to R56 represents a silicon atom, at least one represents a methyl group, at least one represents an alkenyl group, a hydrogen atom, a methyl group, and R51 to R56 other than the alkenyl group represent a hydrocarbon group having 2 to 8 carbon atoms.
- At least one of R51 to R56 represents an aryl group, at least one represents a silicon atom, at least one represents an alkenyl group, and other than an aryl group, a hydrogen atom, and an alkenyl group R51 to R56 each represents a hydrocarbon group having 2 to 8 carbon atoms.
- the content ratio of methyl groups bonded to silicon atoms in the second organopolysiloxane A is preferably 80 mol% or more.
- the content ratio of the methyl group bonded to the silicon atom is obtained from the following formula (X51).
- the content ratio of the methyl group bonded to the silicon atom in the second organopolysiloxane is preferably 85 mol% or more, preferably 99.9 mol% or less, more preferably 99 mol% or less, and still more preferably 98 mol%. % Or less.
- the content ratio of the methyl group is not less than the preferable lower limit, the heat resistance of the cured product is further enhanced.
- the content ratio of the methyl group is not more than the above upper limit, hydrogen atoms bonded to silicon atoms can be sufficiently introduced, and it is easy to improve the curability of the curable composition.
- the content ratio of the aryl group in the second organopolysiloxane B is preferably 30 mol% or more, and preferably 85 mol% or less.
- the content ratio of this aryl group is calculated
- the content ratio of the aryl group is 30 mol% or more, the gas barrier property of the cured product is further enhanced, and cracks and peeling are less likely to occur in the cured product.
- the content ratio of the aryl group is 85 mol% or less, peeling of the cured product is more difficult to occur.
- the content ratio of the aryl group in the second organopolysiloxane B is more preferably 35 mol% or more.
- the content ratio of the aryl group in the second organopolysiloxane B is more preferably 80 mol% or less, still more preferably 75 mol% or less, and particularly preferably 70 mol%. Hereinafter, it is most preferably 65 mol% or less.
- Aryl group content (mol%) (average number of aryl groups contained in one molecule of the second organopolysiloxane ⁇ molecular weight of aryl group / included in one molecule of the second organopolysiloxane) Average number of functional groups bonded to silicon atoms ⁇ average molecular weight of functional groups) ⁇ 100 Formula (Y51)
- the second organopolysiloxane A preferably has an aryl group.
- the aryl group include an unsubstituted phenyl group and a substituted phenyl group.
- the content ratio of the aryl group in the second organopolysiloxane A is preferably 0.5 mol% or more, preferably 10 mol% or less, more preferably 5 mol% or less.
- the heat resistance of the cured product is further improved.
- the structural unit represented by (R54R55SiO 2/2 ) (hereinafter also referred to as a bifunctional structural unit) has the following formula ( 51-2), that is, a structure in which one of oxygen atoms bonded to a silicon atom in the bifunctional structural unit constitutes a hydroxy group or an alkoxy group may be included.
- the structural unit represented by (R54R55SiO 2/2 ) includes a portion surrounded by a broken line of the structural unit represented by the following formula (51-b), and is further represented by the following formula (51-2-b). A portion surrounded by a broken line of the structural unit may be included. That is, a structural unit having a group represented by R54 and R55 and having an alkoxy group or a hydroxy group remaining at the terminal is also included in the structural unit represented by (R54R55SiO 2/2 ).
- X represents OH or OR
- OR represents a linear or branched alkoxy group having 1 to 4 carbon atoms.
- R54 and R55 in the formula (51-b), formula (51-2) and formula (51-2-b) are the same groups as R54 and R55 in the formula (51A) and the formula (51B). It is.
- the structural unit represented by (R56SiO 3/2 ) (hereinafter also referred to as trifunctional structural unit) has the following formula ( 51-3) or a structure represented by formula (51-4), that is, a structure in which two oxygen atoms bonded to a silicon atom in a trifunctional structural unit each constitute a hydroxy group or an alkoxy group, or a trifunctional
- One of the oxygen atoms bonded to the silicon atom in the structural unit may include a structure constituting a hydroxy group or an alkoxy group.
- the structural unit represented by (R56SiO 3/2 ) includes a portion surrounded by a broken line of the structural unit represented by the following formula (51-c), and further includes the following formula (51-3-c) or formula ( A part surrounded by a broken line of the structural unit represented by 51-4-c) may be included. That is, a structural unit having a group represented by R56 and having an alkoxy group or a hydroxy group remaining at the terminal is also included in the structural unit represented by (R56SiO 3/2 ).
- R56 in the above formula (51-c), formula (51-3), formula (51-3-c), formula (51-4) and formula (51-4-c) represents the above formula (51A) and It is the same group as R56 in the above formula (51B).
- the linear or branched alkoxy group having 1 to 4 carbon atoms is not particularly limited.
- the lower limit of p / (p + q + r) is 0.10 and the upper limit is 0.50.
- p / (p + q + r) is less than or equal to the above upper limit, the hardness of the cured product is increased, adhesion of scratches and dust can be prevented, the heat resistance of the cured product is further increased, and peeling of the cured product can be further suppressed.
- p / (p + q + r) becomes like this. Preferably it is 0.45 or less, More preferably, it is 0.40 or less.
- the lower limit of q / (p + q + r) is 0, and the upper limit is 0.40.
- q / (p + q + r) exceeds 0, the cured product does not become too hard and cracks are hardly generated in the cured product.
- q / (p + q + r) becomes like this.
- it is 0.10 or more, More preferably, it is 0.15 or more.
- the structural unit of (R54R55SiO 2/2 ) does not exist in the above formula (51A).
- the lower limit of r / (p + q + r) is 0.40, and the upper limit is 0.90.
- r / (p + q + r) is not less than the above lower limit, the hardness of the cured product is increased, and scratches and dust can be prevented from adhering.
- r / (p + q + r) is not more than the above upper limit, it is easy to maintain an appropriate viscosity of the curable composition, and the adhesiveness of the cured product is further enhanced.
- p / (p + q + r) is 0.05 or more and 0.50 or less.
- p / (p + q + r) is less than or equal to the above upper limit, the heat resistance of the cured product is further increased, and peeling of the cured product can be further suppressed.
- p / (p + q + r) becomes like this.
- it is 0.10 or more, Preferably it is 0.45 or less.
- q / (p + q + r) is 0.05 or more and 0.50 or less.
- q / (p + q + r) is not less than the above lower limit, the cured product does not become too hard and cracks are hardly generated in the cured product.
- q / (p + q + r) is not more than the above upper limit, the gas barrier property of the cured product is further enhanced.
- q / (p + q + r) is preferably 0.10 or more, and preferably 0.45 or less.
- r / (p + q + r) is 0.20 or more and 0.80 or less.
- r / (p + q + r) is equal to or greater than the above lower limit, the hardness of the cured product is increased, scratches and dust can be prevented, the heat resistance of the cured product is increased, and the thickness of the cured product is less likely to decrease in a high temperature environment.
- r / (p + q + r) is not more than the above upper limit, it is easy to maintain an appropriate viscosity of the curable composition, and the adhesiveness of the cured product is further enhanced.
- the ratio of each structural unit in the above formula (51A) and the above formula (51B) can be measured by measuring 29 Si-NMR and comparing the peak areas of the respective signals.
- the content of the second organopolysiloxane is preferably 10 parts by weight or more, more preferably 15 parts by weight or more, still more preferably 20 parts by weight or more, preferably 100 parts by weight of the first organopolysiloxane. 400 parts by weight or less, more preferably 300 parts by weight or less, still more preferably 200 parts by weight or less.
- a curable composition more excellent in curability can be obtained.
- the number average molecular weight (Mn) of the first organopolysiloxane is preferably 500 or more, more preferably 1000 or more, still more preferably 5000 or more, preferably 200000 or less, more preferably 100000 or less, still more preferably 60000 or less, Particularly preferred is 10,000 or less, and most preferred is 8000 or less.
- the number average molecular weight (Mn) of the first organopolysiloxane represented by the above formula (1A) is preferably 500 or more, more preferably 1000 or more, further preferably 5000 or more, preferably 200000 or less, more preferably 100000. Hereinafter, it is more preferably 60000 or less.
- the number average molecular weight (Mn) of the first organopolysiloxane represented by the above formula (1B) is preferably 500 or more, more preferably 1000 or more, preferably 10,000 or less, more preferably 8000 or less.
- the number average molecular weights (Mn) of the second organopolysiloxane, the second organopolysiloxane represented by the formula (51A), and the second organopolysiloxane represented by the formula (51B) are each preferably Is 500 or more, more preferably 1000 or more, preferably 20000 or less, more preferably 10,000 or less.
- the number average molecular weight is not less than the above lower limit, the volatile components are reduced at the time of thermosetting, and the thickness of the cured product is hardly reduced under a high temperature environment.
- the number average molecular weight is not more than the above upper limit, viscosity adjustment is easy.
- the number average molecular weight (Mn) is a value obtained by using polystyrene as a standard substance using gel permeation chromatography (GPC).
- the number average molecular weight (Mn) is determined by two measuring devices manufactured by Waters (column: Shodex GPC LF-804 (length: 300 mm) manufactured by Showa Denko KK), measuring temperature: 40 ° C., flow rate: 1 mL / min, solvent: Tetrahydrofuran, standard substance: polystyrene) means a value measured.
- the method for synthesizing the first and second organopolysiloxanes is not particularly limited, and examples thereof include a method in which an alkoxysilane compound is hydrolyzed and subjected to a condensation reaction, and a method in which a chlorosilane compound is hydrolyzed and condensed. Especially, the method of hydrolyzing and condensing an alkoxysilane compound from a viewpoint of reaction control is preferable.
- Examples of the method of hydrolyzing and condensing the alkoxysilane compound include a method of reacting an alkoxysilane compound in the presence of water and an acidic catalyst or a basic catalyst. Further, the disiloxane compound may be hydrolyzed and used.
- organosilicon compound for introducing an alkenyl group into the first organopolysiloxane examples include vinyltrimethoxysilane, vinyltriethoxysilane, vinylmethyldimethoxysilane, methoxydimethylvinylsilane, vinyldimethylethoxysilane, and 1,3-divinyl. -1,1,3,3-tetramethyldisiloxane and the like.
- organosilicon compound for introducing a hydrogen atom bonded to a silicon atom into the second organopolysiloxane examples include trimethoxysilane, triethoxysilane, methyldimethoxysilane, methyldiethoxysilane, and 1,1,3, Examples include 3-tetramethyldisiloxane.
- organosilicon compound for introducing an aryl group into the first and second organopolysiloxanes as necessary include triphenylmethoxysilane, triphenylethoxysilane, diphenyldimethoxysilane, diphenyldiethoxysilane, methyl (phenyl) ) Dimethoxysilane, phenyltrimethoxysilane and the like.
- organosilicon compounds examples include silane, cyclohexyl (methyl) dimethoxysilane, methyltrimethoxysilane, methyltriethoxysilane, ethyltrimethoxysilane, ethyltriethoxysilane, hexyltrimethoxysilane, and octyltrimethoxysilane.
- Examples of the acidic catalyst include inorganic acids, organic acids, acid anhydrides of inorganic acids and derivatives thereof, and acid anhydrides of organic acids and derivatives thereof.
- Examples of the inorganic acid include hydrochloric acid, phosphoric acid, boric acid, and carbonic acid.
- examples of the organic acid include formic acid, acetic acid, propionic acid, butyric acid, lactic acid, malic acid, tartaric acid, citric acid, oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, fumaric acid, maleic acid and oleic acid. Is mentioned.
- Examples of the basic catalyst include alkali metal hydroxides, alkali metal alkoxides, and alkali metal silanol compounds.
- alkali metal hydroxide examples include sodium hydroxide, potassium hydroxide and cesium hydroxide.
- alkali metal alkoxide include sodium-t-butoxide, potassium-t-butoxide, and cesium-t-butoxide.
- alkali metal silanol compound examples include a sodium silanolate compound, a potassium silanolate compound, and a cesium silanolate compound.
- a potassium catalyst or a cesium catalyst is preferable.
- the hydrosilylation reaction catalyst contained in the curable composition for optical semiconductor devices according to the present invention is bonded to an alkenyl group in the first organopolysiloxane and a silicon atom in the second organopolysiloxane. It is a catalyst for the hydrosilylation reaction between the hydrogen atom.
- hydrosilylation reaction catalyst various catalysts that cause the hydrosilylation reaction to proceed can be used.
- the said catalyst for hydrosilylation reaction only 1 type may be used and 2 or more types may be used together.
- hydrosilylation reaction catalyst examples include platinum-based catalysts, rhodium-based catalysts, and palladium-based catalysts. Since the transparency of the cured product is increased, a platinum-based catalyst is preferable.
- platinum-based catalyst examples include platinum powder, chloroplatinic acid, platinum-alkenylsiloxane complex, platinum-olefin complex, and platinum-carbonyl complex.
- platinum-alkenylsiloxane complex or a platinum-olefin complex is preferred.
- Examples of the alkenylsiloxane in the platinum-alkenylsiloxane complex include 1,3-divinyl-1,1,3,3-tetramethyldisiloxane and 1,3,5,7-tetramethyl-1,3,5. , 7-tetravinylcyclotetrasiloxane and the like.
- Examples of the olefin in the platinum-olefin complex include allyl ether and 1,6-heptadiene.
- alkenylsiloxane is preferably 1,3-divinyl-1,1,3,3-tetramethyldisiloxane.
- the organosiloxane oligomer is preferably a dimethylsiloxane oligomer.
- the olefin is preferably 1,6-heptadiene.
- the content of the catalyst for hydrosilylation reaction is preferably 0.01 ppm or more, more preferably 1 ppm or more, preferably in terms of weight units of metal atoms (platinum atoms in the case of platinum alkenyl complexes). Is 1000 ppm or less, more preferably 500 ppm or less.
- the content of the hydrosilylation reaction catalyst is not less than the above lower limit, it is easy to sufficiently cure the curable composition.
- the content of the catalyst for hydrosilylation reaction is not more than the above upper limit, the problem of coloring of the cured product hardly occurs.
- the curable composition for optical semiconductor devices according to the present invention includes a first silane compound having a ureido group or an isocyanate group.
- a first silane compound having a ureido group or an isocyanate group By using the first silane compound having this specific group, even if the optical semiconductor device is used in a harsh environment under high temperature and high humidity, the curable composition is cured from the bonded object of the cured product. Peeling is less likely to occur.
- the first silane compound may have a ureido group or an isocyanate group.
- the composition comprising the first organopolysiloxane having an alkenyl group, the second organopolysiloxane having a hydrogen atom bonded to a silicon atom, and a catalyst for hydrosilylation reaction, the second organopolysiloxane having an ureido group or an isocyanate group.
- 1 silane compound By using 1 silane compound, the viscosity of the curable composition for optical semiconductor devices hardly changes, and the pot life of the curable composition for optical semiconductor devices is improved.
- the first silane compound may have a ureido group or an isocyanate group. From the viewpoint of further increasing the adhesiveness of the cured product to the object to be bonded, the first silane compound preferably has a ureido group. In addition, the use of the first silane compound having a ureido group can further suppress electrode discoloration due to sulfur-containing gas in the atmosphere in the optical semiconductor device.
- the first silane compound is a first silane compound represented by the following formula (S1) or the following formula (S2). preferable.
- the first silane compound is represented by the following formula (S1). It is preferable that it is the 1st silane compound represented.
- X1 represents an alkoxy group
- X2 and X3 each represents an alkoxy group or a hydrocarbon group having 1 to 8 carbon atoms
- R4 is a single bond directly bonding a nitrogen atom and a silicon atom. Or a hydrocarbon group having 1 to 8 carbon atoms.
- X1 represents an alkoxy group
- X2 and X3 each represents an alkoxy group or a hydrocarbon group having 1 to 8 carbon atoms
- R4 represents a single bond directly connecting a nitrogen atom and a silicon atom. It represents a bond or a hydrocarbon group having 1 to 8 carbon atoms.
- the number of carbon atoms of the alkoxy group in X1 in the formula (S1) and the formula (S2) is preferably 1-8.
- the alkoxy group in X2 and X3 preferably has 1 to 8 carbon atoms.
- the first silane compound represented by the above formula (S1) is preferably the first silane compound represented by the following formula (S1-1).
- S1-1 the adhesion of the cured product to the object to be bonded is further enhanced.
- R1 to R3 each represent a hydrocarbon group having 1 to 8 carbon atoms
- R4 represents a single bond directly bonding a nitrogen atom and a silicon atom, or 1 to 8 hydrocarbon groups are represented.
- the first silane compound represented by the above formula (S2) is preferably the first silane compound represented by the following formula (S2-1).
- S2-1 the adhesion of the cured product to the object to be bonded is further enhanced.
- R1 to R3 each represent a hydrocarbon group having 1 to 8 carbon atoms
- R4 represents a single bond directly bonding a nitrogen atom and a silicon atom, or 1 carbon atom. Represents 8 to 8 hydrocarbon groups.
- the content of the first silane compound is preferably 0.01 parts by weight or more, more preferably 0.1 parts by weight or more, preferably 100 parts by weight in total for the first and second organopolysiloxanes. 5 parts by weight or less, more preferably 3 parts by weight or less.
- the content of the first silane compound is equal to or higher than the lower limit, peeling of the cured product from the adhesion target can be further suppressed.
- the content of the first silane compound is not more than the above upper limit, it is possible to prevent the surface stickiness of the sealing agent from being deteriorated due to the excessive first silane coupling agent.
- the curable composition for optical semiconductor devices according to the present invention preferably contains a second silane compound different from the first silane compound having a ureido group or an isocyanate group.
- the second silane compound does not have a ureido group and an isocyanate group.
- the second silane compound is not particularly limited, and examples thereof include vinyltriethoxysilane, vinyltrimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, Examples include 3- (meth) acryloxypropyltrimethoxysilane, ⁇ -aminopropyltrimethoxysilane, and N-phenyl-3-aminopropyltrimethoxysilane.
- (meth) acryloyl indicates acryloyl and methacryloyl.
- (meth) acryloxy refers to acryloxy and methacryloxy.
- the second silane compound preferably has an epoxy group, a vinyl group or a (meth) acryloyl group.
- the second silane compound is 3-glycidoxypropyltrimethoxysilane, 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane. Vinyltrimethoxysilane or 3- (meth) acryloxypropyltrimethoxysilane is preferable.
- the content of the second silane compound is preferably 0.01 parts by weight or more, more preferably 0.1 parts by weight or more, preferably 100 parts by weight based on the total of the first and second organopolysiloxanes. 5 parts by weight or less, more preferably 3 parts by weight or less.
- the content of the second silane compound is equal to or more than the lower limit, peeling of the cured product from the adhesion target can be further suppressed.
- the content of the second silane compound is not more than the above upper limit, it is possible to prevent the surface stickiness of the sealing agent from being deteriorated due to an excessive second silane coupling agent.
- the curable composition for optical semiconductor devices according to the present invention preferably further contains silicon oxide particles.
- the encapsulant preferably further contains silicon oxide particles.
- the primary particle diameter of the silicon oxide particles is preferably 5 nm or more, more preferably 8 nm or more, preferably 200 nm or less, more preferably 150 nm or less.
- the primary particle diameter of the silicon oxide particles is not less than the above lower limit, the dispersibility of the silicon oxide particles is further increased, and the transparency of the cured product is further increased.
- the primary particle diameter of the silicon oxide particles is not more than the above upper limit, it is possible to sufficiently obtain the effect of increasing the viscosity at 25 ° C. and to suppress the decrease in the viscosity due to the temperature increase.
- the primary particle diameter of the silicon oxide particles is measured as follows.
- the cured product of the curable composition for optical semiconductor devices is observed using a transmission electron microscope (“JEM-2100” manufactured by JEOL Ltd.).
- the size of the primary particles of 100 silicon oxide particles in the visual field is measured, and the average value of the measured values is defined as the primary particle diameter.
- the primary particle diameter means an average value of the diameters of the silicon oxide particles when the silicon oxide particles are spherical, and an average value of the major diameters of the silicon oxide particles when the silicon oxide particles are non-spherical.
- the BET specific surface area of the silicon oxide particles is preferably 30 m 2 / g or more, and preferably 400 m 2 / g or less.
- the BET specific surface area of the silicon oxide particles is 30 m 2 / g or more, the viscosity at 25 ° C. of the curable composition can be controlled within a suitable range, and the decrease in the viscosity due to a temperature rise can be suppressed.
- the BET specific surface area of the silicon oxide particles is 400 m 2 / g or less, the aggregation of the silicon oxide particles hardly occurs, the dispersibility can be increased, and the transparency of the cured product can be further increased. it can.
- the silicon oxide particles are not particularly limited, and examples thereof include silica produced by a dry method such as fumed silica and fused silica, and silica produced by a wet method such as colloidal silica, sol-gel silica and precipitated silica. It is done.
- fumed silica is suitably used as the silicon oxide particles from the viewpoint of obtaining a cured product with less volatile components and higher transparency.
- Examples of the fumed silica include Aerosil 50 (specific surface area: 50 m 2 / g), Aerosil 90 (specific surface area: 90 m 2 / g), Aerosil 130 (specific surface area: 130 m 2 / g), Aerosil 200 (specific surface area). : 200 m 2 / g), Aerosil 300 (specific surface area: 300 m 2 / g), Aerosil 380 (specific surface area: 380 m 2 / g) (all manufactured by Nippon Aerosil Co., Ltd.) and the like.
- the silicon oxide particles are preferably surface-treated with an organosilicon compound. By this surface treatment, the dispersibility of the silicon oxide particles becomes very high, and it is possible to further suppress the decrease in the viscosity due to the temperature rise of the curable composition.
- the content of the silicon oxide particles is preferably 0.1 parts by weight or more, more preferably 0.5 parts by weight with respect to a total of 100 parts by weight of the first organopolysiloxane and the second organopolysiloxane. More preferably, it is 1 part by weight or more, preferably 40 parts by weight or less, more preferably 35 parts by weight or less, and still more preferably 20 parts by weight or less.
- the content of the silicon oxide particles is equal to or higher than the lower limit, it is possible to suppress a decrease in viscosity at the time of curing.
- the content of the silicon oxide particles is not more than the above upper limit, the viscosity of the curable composition can be controlled to a more appropriate range, and the transparency of the cured product is further enhanced.
- the curable composition for optical semiconductor devices according to the present invention may further contain a phosphor.
- the curable composition for optical semiconductor devices according to the present invention is an encapsulant for optical semiconductor devices
- the encapsulant preferably further contains a phosphor.
- the curable composition for optical semiconductor devices which concerns on this invention does not need to contain fluorescent substance. In this case, a phosphor may be added when the curable composition is used.
- the phosphor absorbs light emitted from a light-emitting element that is sealed using the curable composition for optical semiconductor devices, and generates fluorescence to finally obtain light of a desired color. Acts as follows. The phosphor is excited by light emitted from the light emitting element to emit fluorescence, and light of a desired color is obtained by a combination of light emitted from the light emitting element and fluorescence emitted from the phosphor.
- the content of the phosphor can be adjusted as appropriate so as to obtain light of a desired color, and is not particularly limited.
- the content of the phosphor is preferably 0.1 parts by weight or more and preferably 40 parts by weight or less with respect to 100 parts by weight of the curable composition for optical semiconductor devices according to the present invention.
- the content of the phosphor is preferably 0.1 parts by weight or more and preferably 40 parts by weight or less with respect to 100 parts by weight of all components excluding the phosphor of the curable composition for optical semiconductor devices.
- the curable composition for an optical semiconductor device includes a dispersant, an antioxidant, an antifoaming agent, a colorant, a modifier, a leveling agent, a light diffusing agent, a heat conductive filler, or a flame retardant as necessary. Etc. may further be included.
- said 1st organopolysiloxane, said 2nd organopolysiloxane, said hydrosilylation reaction catalyst, and said 1st silane compound are the liquids containing these 1 type, or 2 or more types separately.
- the curable composition for optical semiconductor devices according to the present invention may be prepared by preparing and mixing a plurality of liquids immediately before use. For example, the first liquid containing the first organopolysiloxane and the second liquid containing the second organopolysiloxane are prepared separately, and the first liquid and the second liquid are prepared just before use.
- the curable composition for optical semiconductor devices according to the present invention may be prepared by mixing with a liquid. At least one of the first liquid and the second liquid contains the hydrosilylation reaction catalyst.
- the first liquid preferably contains a hydrosilylation reaction catalyst.
- the first silane compound may be added to the first liquid or may be added to the second liquid. At least one of the first liquid and the second liquid contains the first silane compound.
- the second silane compound, the silicon oxide particles, or the phosphor is used, the second silane compound, the silicon oxide particles, or the phosphor may be added to the first liquid, respectively. It may be added to the second liquid. It is preferable that at least one of the first liquid and the second liquid contains the second silane compound.
- storage stability improves by making said 1st organopolysiloxane and said 2nd organopolysiloxane into 2 liquids of a 1st liquid and a 2nd liquid separately.
- the curing temperature of the curable composition for optical semiconductor devices according to the present invention is not particularly limited.
- the curing temperature of the curable composition for optical semiconductor devices is preferably 80 ° C. or higher, more preferably 100 ° C. or higher, preferably 180 ° C. or lower, more preferably 150 ° C. or lower.
- the curing temperature is not less than the above lower limit, curing of the curable composition proceeds sufficiently.
- the curing temperature is not more than the above upper limit, the package is unlikely to be thermally deteriorated.
- the curing method is not particularly limited, but it is preferable to use a step cure method.
- the step cure method is a method in which the resin is temporarily cured at a low temperature and then cured at a high temperature. By using the step cure method, curing shrinkage of the cured product can be suppressed.
- mixers such as a homodisper, a homomixer, a universal mixer, a planetarium mixer, a kneader, a triple roll, or a bead mill.
- the light-emitting element is not particularly limited as long as it is a light-emitting element using a semiconductor.
- the light-emitting element is a light-emitting diode
- a structure in which an LED-type semiconductor material is stacked on a substrate is exemplified.
- the semiconductor material include GaAs, GaP, GaAlAs, GaAsP, AlGaInP, GaN, InN, AlN, InGaAlN, and SiC.
- Examples of the material of the substrate include sapphire, spinel, SiC, Si, ZnO, and GaN single crystal. Further, a buffer layer may be formed between the substrate and the semiconductor material as necessary. Examples of the material of the buffer layer include GaN and AlN.
- optical semiconductor device examples include a light emitting diode device, a semiconductor laser device, and a photocoupler.
- Such optical semiconductor devices include, for example, backlights such as liquid crystal displays, illumination, various sensors, light sources such as printers and copiers, vehicle measuring instrument light sources, signal lights, indicator lights, display devices, and light sources for planar light emitters. It is suitably used for displays, decorations, various lights and switching elements.
- the curable composition for optical semiconductor devices according to the present invention is preferably an encapsulant for optical semiconductor devices or a lens material for optical semiconductor devices.
- the curable composition for optical semiconductor devices according to the present invention may be an encapsulant for optical semiconductor devices or a lens material for optical semiconductor devices.
- the curable composition for optical semiconductor devices according to the present invention is also used as a coating material for optical semiconductor devices for forming a coating layer on the surface of an optical semiconductor element.
- An optical semiconductor device includes an optical semiconductor element and a sealing agent disposed so as to seal the optical semiconductor element or a lens disposed on the optical semiconductor element.
- the sealing agent or the lens is formed by curing the above-described curable composition for optical semiconductor devices.
- a cured product of the curable composition for an optical semiconductor device is disposed so as to seal a light emitting element formed of an optical semiconductor such as an LED, the cured product is effectively peeled from the housing or the like. Can be suppressed.
- the lens may be directly laminated on the optical semiconductor element, or may be disposed on the optical semiconductor element via a sealant or the like disposed so as to seal the optical semiconductor element. That is, the lens may be disposed on the surface of the sealant.
- the shape of the lens is not particularly limited. From the viewpoint of controlling the light emission direction in the optical semiconductor device and further suppressing the front luminance from becoming too high, the shape of the lens may be a part of a sphere or a part of a spheroid. preferable.
- FIG. 1 is a front sectional view showing an optical semiconductor device according to the first embodiment of the present invention.
- the optical semiconductor device 1 of this embodiment has a housing 2.
- An optical semiconductor element 3 is disposed in the housing 2.
- the optical semiconductor element 3 is surrounded by an inner surface 2 a having light reflectivity of the housing 2.
- the optical semiconductor element 3 is a light emitting element such as an LED.
- the inner surface 2a is formed such that the diameter of the inner surface 2a increases toward the opening end. Therefore, of the light emitted from the optical semiconductor element 3, the light that has reached the inner surface 2 a is reflected by the inner surface 2 a and travels forward of the optical semiconductor element 3.
- a sealing agent 4 that is a cured product of the curable composition for optical semiconductor devices is filled.
- the sealant 4 is formed by curing the sealant that is the curable composition for optical semiconductor devices according to the present invention, and is a cured product of the sealant.
- FIG. 2 is a front sectional view showing an optical semiconductor device according to the second embodiment of the present invention.
- the optical semiconductor device 11 shown in FIG. An optical semiconductor element 3 is disposed in the housing 2.
- a sealing agent 12 is filled in a region surrounded by the inner surface 2 a of the housing 2 so as to seal the optical semiconductor element 3. That is, the optical semiconductor element 3 is sealed with the sealant 12 in the housing 2.
- a sealing agent 12 is disposed so as to seal the optical semiconductor element 3.
- a lens 13 is disposed on the surface 12 a of the sealant 12.
- the lens 13 is formed by curing a lens material that is a curable composition for optical semiconductor devices according to the present invention, and is a cured product of the lens material.
- FIG. 3 is a front sectional view showing an optical semiconductor device according to the third embodiment of the present invention.
- an optical semiconductor element 23 is arranged on a substrate 22 on which a terminal 22a is provided.
- An electrode 23 a provided on the upper surface of the optical semiconductor element 23 and a terminal 22 a provided on the upper surface of the substrate 22 are electrically connected by a bonding wire 24.
- a lens 25 is disposed on the optical semiconductor element 23.
- the lens 25 covers the surface of the optical semiconductor element 23 and the bonding wire 24.
- the lens 25 is formed by curing a lens material that is a curable composition for optical semiconductor devices according to the present invention, and is a cured product of the lens material.
- FIGS. 1 to 3 are merely examples of the optical semiconductor device according to the present invention, and the mounting structure of the optical semiconductor device can be modified as appropriate.
- the number average molecular weight of the obtained polymer (A) was 37400.
- the polymer (A) had the following average composition formula (A1).
- Me represents a methyl group
- Vi represents a vinyl group.
- the content ratio of the methyl group of the obtained polymer (A) was 99 mol%.
- the molecular weight of each polymer obtained in Synthesis Example 1 and Synthesis Examples 2 to 6 was measured by GPC measurement by adding 1 mL of tetrahydrofuran to 10 mg, stirring until dissolved.
- GPC measurement a measuring device manufactured by Waters (column: Shodex GPC LF-804 (length: 300 mm) x 2 manufactured by Showa Denko KK), measuring temperature: 40 ° C., flow rate: 1 mL / min, solvent: tetrahydrofuran, standard substance: Polystyrene) was used.
- the number average molecular weight (Mn) of the obtained polymer (B) was 1700.
- the polymer (B) had the following average composition formula (B1).
- Me represents a methyl group
- Ph represents a phenyl group
- Vi represents a vinyl group.
- the content ratio of the phenyl group of the obtained polymer (B) was 80.8 mol%.
- the polymer was obtained by removing the volatile component under reduced pressure.
- 150 g of hexane and 150 g of ethyl acetate were added, washed 10 times with 300 g of ion-exchanged water, reduced in pressure to remove volatile components, and polymer (C) was obtained.
- the number average molecular weight of the obtained polymer (C) was 3420.
- the polymer (C) had the following average composition formula (C1).
- Me represents a methyl group
- Vi represents a vinyl group.
- the content ratio of methyl groups of the obtained polymer (C) was 90 mol%.
- Synthesis Example 4 Synthesis of Second Organopolysiloxane A 1000 mL separable flask equipped with a thermometer, a dropping device and a stirrer was charged with 31 g of trimethylmethoxysilane, 40 g of 1,1,3,3-tetramethyldisiloxane, diphenyl. 110 g of dimethoxysilane, 268 g of phenyltrimethoxysilane, and 45 g of vinyltrimethoxysilane were added and stirred at 50 ° C. Into this, a solution of 1.4 g of hydrochloric acid and 116 g of water was slowly added dropwise, and after the addition, the mixture was stirred at 50 ° C.
- the number average molecular weight (Mn) of the obtained polymer (D) was 1100.
- the polymer (D) had the following average composition formula (D1).
- Me represents a methyl group
- Ph represents a phenyl group
- Vi represents a vinyl group.
- the content ratio of the phenyl group of the obtained polymer (D) was 82.5 mol%.
- Synthesis Example 5 Synthesis of First Organopolysiloxane
- a 1 L separable flask equipped with a thermometer, a dropping device and a stirrer was charged with 474 g of dimethyldimethoxysilane, 10 g of diphenyldimethoxysilane, 1,3-divinyl-1,1, 1.2 g of 3,3-tetramethyldisiloxane and 200 g of dimethylformamide were added and stirred at 50 ° C.
- a solution prepared by dissolving 2.2 g of potassium hydroxide in 144 g of water was slowly added dropwise thereto, and after the dropwise addition, the mixture was stirred at 50 ° C. for 2 hours to react, further heated to 85 ° C.
- the number average molecular weight of the obtained polymer (E) was 52300.
- the polymer (E) had the following average composition formula (E1).
- Me represents a methyl group
- Ph represents a phenyl group
- Vi represents a vinyl group.
- the content ratio of the methyl group of the obtained polymer (E) was 99 mol%.
- the polymer was obtained by removing the volatile component under reduced pressure.
- 150 g of hexane and 150 g of ethyl acetate were added, washed 10 times with 300 g of ion-exchanged water, reduced in pressure to remove volatile components, and polymer (F) was obtained.
- the number average molecular weight of the obtained polymer (F) was 5480.
- the polymer (F) had the following average composition formula (F1).
- Me represents a methyl group
- Vi represents a vinyl group.
- the content ratio of the methyl group of the obtained polymer (F) was 90 mol%.
- Example 1 Polymer A (10 g), Polymer C (10 g), 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex of platinum (the platinum metal is 10 ppm by weight with respect to the entire curable composition) And 3-ureidopropyltriethoxysilane (0.2 g) were mixed and defoamed to obtain a curable composition for optical semiconductor devices.
- Example 2 Polymer A (10 g), Polymer C (10 g), 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex of platinum (the platinum metal is 10 ppm by weight with respect to the entire curable composition) And 3-isocyanatopropyltriethoxysilane (0.2 g) were mixed and defoamed to obtain a curable composition for optical semiconductor devices.
- Example 3 Polymer A (10 g), Polymer C (10 g), 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex of platinum (the platinum metal is 10 ppm by weight with respect to the entire curable composition) 2), 3-ureidopropyltriethoxysilane (0.15 g), and 3-glycidoxypropyltrimethoxysilane (0.15 g) are mixed and defoamed to obtain a curable composition for optical semiconductor devices. Obtained.
- Example 4 Polymer A (10 g), Polymer C (10 g), 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex of platinum (the platinum metal is 10 ppm by weight with respect to the entire curable composition) ), 3-ureidopropyltriethoxysilane (0.15 g), and 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane (0.15 g) are mixed and degassed for use in an optical semiconductor device. A curable composition was obtained.
- Example 5 Polymer A (10 g), Polymer C (10 g), 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex of platinum (the platinum metal is 10 ppm by weight with respect to the entire curable composition) ), 3-ureidopropyltriethoxysilane (0.15 g), and vinyltrimethoxysilane (0.15 g) were mixed and defoamed to obtain a curable composition for optical semiconductor devices.
- Example 6 Polymer A (10 g), Polymer C (10 g), 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex of platinum (the platinum metal is 10 ppm by weight with respect to the entire curable composition) 2), 3-ureidopropyltriethoxysilane (0.15 g), and 3-methacryloxypropyltrimethoxysilane (0.15 g) are mixed and degassed to obtain a curable composition for an optical semiconductor device. It was.
- Example 7 Polymer A (10 g), Polymer C (10 g), 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex of platinum (the platinum metal is 10 ppm by weight with respect to the entire curable composition) 3), 3-ureidopropyltriethoxysilane (0.10 g), 3-glycidoxypropyltrimethoxysilane (0.10 g), and vinyltrimethoxysilane (0.10 g) are mixed and defoamed.
- a curable composition for an optical semiconductor device was obtained.
- Example 8 Polymer A (10 g), Polymer C (10 g), 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex of platinum (the platinum metal is 10 ppm by weight with respect to the entire curable composition) ), 3-isocyanatopropyltriethoxysilane (0.15 g), and 3-glycidoxypropyltrimethoxysilane (0.15 g) are mixed and degassed to obtain a curable composition for optical semiconductor devices. Obtained.
- Example 9 Polymer A (10 g), Polymer C (10 g), 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex of platinum (the platinum metal is 10 ppm by weight with respect to the entire curable composition) ), 3-isocyanatopropyltriethoxysilane (0.15 g), and 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane (0.15 g) are mixed and degassed for use in an optical semiconductor device. A curable composition was obtained.
- Example 10 Polymer A (10 g), Polymer C (10 g), 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex of platinum (the platinum metal is 10 ppm by weight with respect to the entire curable composition) ), 3-isocyanatopropyltriethoxysilane (0.15 g), and vinyltrimethoxysilane (0.15 g) were mixed and defoamed to obtain a curable composition for optical semiconductor devices.
- Example 11 Polymer A (10 g), Polymer C (10 g), 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex of platinum (the platinum metal is 10 ppm by weight with respect to the entire curable composition) 2), 3-isocyanatopropyltriethoxysilane (0.15 g), and 3-methacryloxypropyltrimethoxysilane (0.15 g) are mixed and defoamed to obtain a curable composition for optical semiconductor devices. It was.
- Example 12 Polymer A (10 g), Polymer C (10 g), 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex of platinum (the platinum metal is 10 ppm by weight with respect to the entire curable composition) 3), 3-isocyanatopropyltriethoxysilane (0.10 g), 3-glycidoxypropyltrimethoxysilane (0.10 g), and vinyltrimethoxysilane (0.10 g) are mixed and defoamed.
- a curable composition for an optical semiconductor device was obtained.
- Example 15 Polymer B (10 g), Polymer D (10 g), platinum 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex (platinum metal is 10 ppm by weight with respect to the entire curable composition) 2), 3-ureidopropyltriethoxysilane (0.15 g), and 3-glycidoxypropyltrimethoxysilane (0.15 g) are mixed and defoamed to obtain a curable composition for optical semiconductor devices. Obtained.
- Example 16 Polymer B (10 g), Polymer D (10 g), platinum 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex (platinum metal is 10 ppm by weight with respect to the entire curable composition) ), 3-ureidopropyltriethoxysilane (0.15 g), and vinyltrimethoxysilane (0.15 g) were mixed and defoamed to obtain a curable composition for optical semiconductor devices.
- platinum 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex platinum 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex (platinum metal is 10 ppm by weight with respect to the entire curable composition)
- 3-ureidopropyltriethoxysilane (0.15 g)
- vinyltrimethoxysilane (0.15 g) were mixed and defoamed to obtain a curable composition for optical semiconductor devices.
- Example 17 Polymer B (10 g), Polymer D (10 g), platinum 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex (platinum metal is 10 ppm by weight with respect to the entire curable composition) 3), 3-ureidopropyltriethoxysilane (0.10 g), 3-glycidoxypropyltrimethoxysilane (0.10 g), and vinyltrimethoxysilane (0.10 g) are mixed and defoamed.
- a curable composition for an optical semiconductor device was obtained.
- Example 18 Polymer B (10 g), Polymer D (10 g), platinum 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex (platinum metal is 10 ppm by weight with respect to the entire curable composition) ), 3-isocyanatopropyltriethoxysilane (0.15 g), and 3-glycidoxypropyltrimethoxysilane (0.15 g) are mixed and degassed to obtain a curable composition for optical semiconductor devices. Obtained.
- Example 20 Polymer B (10 g), Polymer D (10 g), platinum 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex (platinum metal is 10 ppm by weight with respect to the entire curable composition) 3), 3-isocyanatopropyltriethoxysilane (0.10 g), 3-glycidoxypropyltrimethoxysilane (0.10 g), and vinyltrimethoxysilane (0.10 g) are mixed and defoamed.
- a curable composition for an optical semiconductor device was obtained.
- Example 21 Polymer E (10 g), Polymer F (10 g), platinum 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex (platinum metal is 10 ppm by weight with respect to the entire curable composition) And 3-ureidopropyltriethoxysilane (0.2 g) were mixed and defoamed to obtain a curable composition for optical semiconductor devices.
- Example 25 Polymer E (10 g), Polymer F (10 g), platinum 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex (platinum metal is 10 ppm by weight with respect to the entire curable composition) 3), 3-ureidopropyltriethoxysilane (0.10 g), 3-glycidoxypropyltrimethoxysilane (0.10 g), and vinyltrimethoxysilane (0.10 g) are mixed and defoamed.
- a curable composition for an optical semiconductor device was obtained.
- Example 28 Polymer E (10 g), Polymer F (10 g), platinum 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex (platinum metal is 10 ppm by weight with respect to the entire curable composition) 3), 3-isocyanatopropyltriethoxysilane (0.10 g), 3-glycidoxypropyltrimethoxysilane (0.10 g), and vinyltrimethoxysilane (0.10 g) are mixed and defoamed.
- a curable composition for an optical semiconductor device was obtained.
- the obtained optical semiconductor device was placed in a chamber at 40 ° C. and a relative humidity of 90% RH, and the chamber was filled with gas so that the concentration of hydrogen sulfide gas was 5 ppm and the concentration of sulfur dioxide gas was 15 ppm. . From the gas filling, the lead electrodes plated with silver were visually observed after 24 hours, 48 hours, 96 hours, 168 hours and 500 hours.
- Thermal shock test Using the obtained optical semiconductor device and using a liquid bath thermal shock tester (“TSB-51” manufactured by ESPEC), the temperature was maintained at ⁇ 50 ° C. for 5 minutes, and then the temperature was increased to 135 ° C. A cold cycle test was conducted in which the process of holding at 5 ° C. for 5 minutes and then lowering the temperature to ⁇ 50 ° C. was 1 cycle. 20 samples were taken out after 500 cycles, 1000 cycles, 1500 cycles, 2000 cycles and 3000 cycles, respectively.
- TTB-51 liquid bath thermal shock tester
- the sample was observed with a stereomicroscope ("SMZ-10" manufactured by Nikon Corporation). It is observed whether cracks are generated in the cured products obtained by curing 20 samples of the curable composition for optical semiconductor devices, or whether the cured products are separated from the package or the electrode. The number of samples produced (NG number) was counted.
- Viscosity ratio A curable composition for optical semiconductor devices immediately after fabrication (a curable composition immediately after fabrication) was prepared. Furthermore, the curable composition immediately after preparation was allowed to stand at room temperature (23 ° C.) for 3 hours to prepare a curable composition after 3 hours. Using a viscosity measuring device (“VISCOMETER TV-22” manufactured by Toki Sangyo Co., Ltd.), the viscosity of the curable composition immediately after preparation at 23 ° C. and 10 rpm, and the temperature of the curable composition after 3 hours at 23 ° C. and 10 rpm And the viscosity was measured. The viscosity ratio (viscosity value after 3 hours / initial viscosity value) to the viscosity value in the curable composition immediately after production of the viscosity value in the curable composition after 3 hours was determined.
- VISCOMETER TV-22 manufactured by Toki Sangyo Co., Ltd.
- the luminous intensity when a current of 20 mA was passed through the light emitting element was measured using a photometric measuring device (“OL770” manufactured by Optronic Laboratories) at a temperature of 23 ° C. (hereinafter, “initial” Called “luminosity”).
- the optical semiconductor device was placed in a chamber under an atmosphere of 85 ° C. and a relative humidity of 85 RH% with a current of 20 mA flowing through the light emitting element, and left for 1000 hours.
- the light intensity when a current of 20 mA was passed through the light emitting element was measured using a light intensity measuring device (“OL770” manufactured by Optronic Laboratories), and the rate of decrease in light intensity relative to the initial light intensity Calculated.
- the rate of decrease in luminous intensity is less than 5%, it is “ ⁇ ”, when it is 5% or more and less than 10%, “ ⁇ ”, when it is 10% or more and less than 20%, “ ⁇ ”, when it is 20% or more It was determined as “x”.
- the obtained optical semiconductor device was fixed with a double-sided tape on a slide glass with the light emitting surface facing up.
- 0.2 g of sulfur was placed in a glass container with a lid having a capacity of 120 mL, and a slide glass on which the optical semiconductor device was fixed was placed in the glass container so that the optical semiconductor device and sulfur were not in direct contact.
- the glass container was sealed and placed in an oven at 80 ° C. After being placed in the oven, changes in the silver-plated lead electrode were visually observed after 4 hours, 8 hours, 16 hours, 24 hours and 48 hours, respectively.
- the gas corrosion test 2 was determined according to the following criteria. In addition, when the adhesiveness with respect to the adhesion target object of hardened
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Abstract
Description
本発明に係る光半導体装置用硬化性組成物に含まれている第1のオルガノポリシロキサンは、アルケニル基を2個以上有する。アルケニル基は珪素原子に直接結合していることが好ましい。なお、上記アルケニル基の炭素-炭素二重結合における炭素原子が、珪素原子に結合していてもよく、上記アルケニル基の炭素-炭素二重結合における炭素原子とは異なる炭素原子が、珪素原子に結合していてもよい。上記第1のオルガノポリシロキサンは、1種のみが用いられてもよく、2種以上が併用されてもよい。 (First organopolysiloxane)
The first organopolysiloxane contained in the curable composition for optical semiconductor devices according to the present invention has two or more alkenyl groups. The alkenyl group is preferably directly bonded to the silicon atom. The carbon atom in the carbon-carbon double bond of the alkenyl group may be bonded to the silicon atom, and the carbon atom different from the carbon atom in the carbon-carbon double bond of the alkenyl group is bonded to the silicon atom. It may be bonded. As for said 1st organopolysiloxane, only 1 type may be used and 2 or more types may be used together.
本発明に係る光半導体装置用硬化性組成物に含まれている第2のオルガノポリシロキサンは、珪素原子に結合した水素原子を2個以上有する。水素原子は、珪素原子に直接結合している。上記第2のオルガノポリシロキサンは、1種のみが用いられてもよく、2種以上が併用されてもよい。また、上記第2のオルガノポリシロキサンは、1つの珪素原子に、3つの酸素原子が結合した構造単位を含んでいてもよい。この場合に、3つの酸素原子が結合した珪素原子には、1つの水素原子が結合しいてもよく、1つの炭素数1~8の炭化水素基(メチル基又は炭素数2~8の炭化水素基)が結合していてもよい。 (Second organopolysiloxane)
The second organopolysiloxane contained in the curable composition for optical semiconductor devices according to the present invention has two or more hydrogen atoms bonded to silicon atoms. The hydrogen atom is directly bonded to the silicon atom. As for said 2nd organopolysiloxane, only 1 type may be used and 2 or more types may be used together. The second organopolysiloxane may contain a structural unit in which three oxygen atoms are bonded to one silicon atom. In this case, one hydrogen atom may be bonded to the silicon atom to which three oxygen atoms are bonded, and one hydrocarbon group having 1 to 8 carbon atoms (methyl group or hydrocarbon having 2 to 8 carbon atoms). Group) may be bonded.
上記第1のオルガノポリシロキサンの数平均分子量(Mn)は、好ましくは500以上、より好ましくは1000以上、更に好ましくは5000以上、好ましくは200000以下、より好ましくは100000以下、更に好ましくは60000以下、特に好ましくは10000以下、最も好ましくは8000以下である。上記式(1A)で表される第1のオルガノポリシロキサンの数平均分子量(Mn)は、好ましくは500以上、より好ましくは1000以上、更に好ましくは5000以上、好ましくは200000以下、より好ましくは100000以下、更に好ましくは60000以下である。上記式(1B)で表される第1のオルガノポリシロキサンの数平均分子量(Mn)は、好ましくは500以上、より好ましくは1000以上、好ましくは10000以下、より好ましくは8000以下である。上記第2のオルガノポリシロキサン、上記式(51A)で表される第2のオルガノポリシロキサン及び上記式(51B)で表される第2のオルガノポリシロキサンの数平均分子量(Mn)はそれぞれ、好ましくは500以上、より好ましくは1000以上、好ましくは20000以下、より好ましくは10000以下である。数平均分子量が上記下限以上であると、熱硬化時に揮発成分が少なくなり、高温環境下で硬化物の厚みが減少しにくくなる。数平均分子量が上記上限以下であると、粘度調節が容易である。 (Other properties of the first and second organopolysiloxanes and synthesis methods thereof)
The number average molecular weight (Mn) of the first organopolysiloxane is preferably 500 or more, more preferably 1000 or more, still more preferably 5000 or more, preferably 200000 or less, more preferably 100000 or less, still more preferably 60000 or less, Particularly preferred is 10,000 or less, and most preferred is 8000 or less. The number average molecular weight (Mn) of the first organopolysiloxane represented by the above formula (1A) is preferably 500 or more, more preferably 1000 or more, further preferably 5000 or more, preferably 200000 or less, more preferably 100000. Hereinafter, it is more preferably 60000 or less. The number average molecular weight (Mn) of the first organopolysiloxane represented by the above formula (1B) is preferably 500 or more, more preferably 1000 or more, preferably 10,000 or less, more preferably 8000 or less. The number average molecular weights (Mn) of the second organopolysiloxane, the second organopolysiloxane represented by the formula (51A), and the second organopolysiloxane represented by the formula (51B) are each preferably Is 500 or more, more preferably 1000 or more, preferably 20000 or less, more preferably 10,000 or less. When the number average molecular weight is not less than the above lower limit, the volatile components are reduced at the time of thermosetting, and the thickness of the cured product is hardly reduced under a high temperature environment. When the number average molecular weight is not more than the above upper limit, viscosity adjustment is easy.
本発明に係る光半導体装置用硬化性組成物に含まれているヒドロシリル化反応用触媒は、上記第1のオルガノポリシロキサン中のアルケニル基と、上記第2のオルガノポリシロキサン中の珪素原子に結合した水素原子とをヒドロシリル化反応させる触媒である。 (Catalyst for hydrosilylation reaction)
The hydrosilylation reaction catalyst contained in the curable composition for optical semiconductor devices according to the present invention is bonded to an alkenyl group in the first organopolysiloxane and a silicon atom in the second organopolysiloxane. It is a catalyst for the hydrosilylation reaction between the hydrogen atom.
本発明に係る光半導体装置用硬化性組成物は、ウレイド基又はイソシアネート基を有する第1のシラン化合物を含む。この特定の基を有する該第1のシラン化合物の使用により、光半導体装置が高温高湿下での過酷な環境で使用されても、硬化性組成物が硬化した硬化物の接着対象物からの剥離が生じ難くなる。上記第1のシラン化合物は、ウレイド基を有していてもよく、イソシアネート基を有していてもよい。 (First silane compound)
The curable composition for optical semiconductor devices according to the present invention includes a first silane compound having a ureido group or an isocyanate group. By using the first silane compound having this specific group, even if the optical semiconductor device is used in a harsh environment under high temperature and high humidity, the curable composition is cured from the bonded object of the cured product. Peeling is less likely to occur. The first silane compound may have a ureido group or an isocyanate group.
本発明に係る光半導体装置用硬化性組成物は、ウレイド基又はイソシアネート基を有する第1のシラン化合物とは異なる第2のシラン化合物を含むことが好ましい。上記第2のシラン化合物は、ウレイド基とイソシアネート基とを有さない。上記第1のシラン化合物とともに上記第2のシラン化合物を用いることにより、硬化物の接着対象物からの剥離をより一層抑制できる。上記第2のシラン化合物は1種のみが用いられてもよく、2種以上が併用されてもよい。 (Second silane compound)
The curable composition for optical semiconductor devices according to the present invention preferably contains a second silane compound different from the first silane compound having a ureido group or an isocyanate group. The second silane compound does not have a ureido group and an isocyanate group. By using the second silane compound together with the first silane compound, peeling of the cured product from the object to be bonded can be further suppressed. As for the said 2nd silane compound, only 1 type may be used and 2 or more types may be used together.
本発明に係る光半導体装置用硬化性組成物は、酸化珪素粒子をさらに含むことが好ましい。本発明に係る光半導体装置用硬化性組成物が光半導体装置用封止剤である場合に、該封止剤が酸化珪素粒子をさらに含むことが好ましい。該酸化珪素粒子の使用により、硬化物の耐熱性及び耐光性を損なうことなく、硬化性組成物の粘度を適当な範囲に調整できる。従って、硬化性組成物の取り扱い性を高めることができる。 (Silicon oxide particles)
The curable composition for optical semiconductor devices according to the present invention preferably further contains silicon oxide particles. When the curable composition for optical semiconductor devices according to the present invention is an encapsulant for optical semiconductor devices, the encapsulant preferably further contains silicon oxide particles. By using the silicon oxide particles, the viscosity of the curable composition can be adjusted to an appropriate range without impairing the heat resistance and light resistance of the cured product. Therefore, the handleability of the curable composition can be improved.
本発明に係る光半導体装置用硬化性組成物は、蛍光体をさらに含んでいてもよい。本発明に係る光半導体装置用硬化性組成物が光半導体装置用封止剤である場合に、該封止剤が蛍光体をさらに含むことが好ましい。また、本発明に係る光半導体装置用硬化性組成物は、蛍光体を含んでいなくてもよい。この場合には、硬化性組成物の使用時に蛍光体が添加されてもよい。 (Phosphor)
The curable composition for optical semiconductor devices according to the present invention may further contain a phosphor. When the curable composition for optical semiconductor devices according to the present invention is an encapsulant for optical semiconductor devices, the encapsulant preferably further contains a phosphor. Moreover, the curable composition for optical semiconductor devices which concerns on this invention does not need to contain fluorescent substance. In this case, a phosphor may be added when the curable composition is used.
本発明に係る光半導体装置用硬化性組成物は、必要に応じて、分散剤、酸化防止剤、消泡剤、着色剤、変性剤、レベリング剤、光拡散剤、熱伝導性フィラー又は難燃剤等の添加剤をさらに含んでいてもよい。 (Other ingredients)
The curable composition for an optical semiconductor device according to the present invention includes a dispersant, an antioxidant, an antifoaming agent, a colorant, a modifier, a leveling agent, a light diffusing agent, a heat conductive filler, or a flame retardant as necessary. Etc. may further be included.
本発明に係る光半導体装置用硬化性組成物の硬化温度は特に限定されない。光半導体装置用硬化性組成物の硬化温度は、好ましくは80℃以上、より好ましくは100℃以上、好ましくは180℃以下、より好ましくは150℃以下である。硬化温度が上記下限以上であると、硬化性組成物の硬化が充分に進行する。硬化温度が上記上限以下であると、パッケージの熱劣化が起こり難い。 (Details and applications of curable composition for optical semiconductor devices)
The curing temperature of the curable composition for optical semiconductor devices according to the present invention is not particularly limited. The curing temperature of the curable composition for optical semiconductor devices is preferably 80 ° C. or higher, more preferably 100 ° C. or higher, preferably 180 ° C. or lower, more preferably 150 ° C. or lower. When the curing temperature is not less than the above lower limit, curing of the curable composition proceeds sufficiently. When the curing temperature is not more than the above upper limit, the package is unlikely to be thermally deteriorated.
図1は、本発明の第1の実施形態に係る光半導体装置を示す正面断面図である。 (Embodiment of optical semiconductor device)
FIG. 1 is a front sectional view showing an optical semiconductor device according to the first embodiment of the present invention.
温度計、滴下装置及び攪拌機を備えた1000mLのセパラブルフラスコに、ジメチルジメトキシシラン486g、及び1,3-ジビニル-1,1,3,3-テトラメチルジシロキサン2.7gを入れ、50℃で攪拌した。その中に、水酸化カリウム2.2gを水144gに溶かした溶液をゆっくりと滴下し、滴下後に50℃で6時間攪拌し、反応させて、反応液を得た。次に、減圧して揮発成分を除去し、反応液に酢酸2.4gを加え、減圧下で加熱した。その後、酢酸カリウムをろ過により除去して、ポリマー(A)を得た。 (Synthesis Example 1) Synthesis of first organopolysiloxane In a 1000 mL separable flask equipped with a thermometer, a dropping device and a stirrer, 486 g of dimethyldimethoxysilane and 1,3-divinyl-1,1,3,3- 2.7 g of tetramethyldisiloxane was added and stirred at 50 ° C. A solution prepared by dissolving 2.2 g of potassium hydroxide in 144 g of water was slowly added dropwise thereto, and after the addition, the mixture was stirred at 50 ° C. for 6 hours and reacted to obtain a reaction solution. Next, volatile components were removed under reduced pressure, 2.4 g of acetic acid was added to the reaction solution, and the mixture was heated under reduced pressure. Thereafter, potassium acetate was removed by filtration to obtain a polymer (A).
温度計、滴下装置及び攪拌機を備えた1000mLのセパラブルフラスコに、ジビニルテトラメチルジシロキサン56g、ジメチルジメトキシシラン122g及びジフェニルジメトキシシラン366gを入れ、50℃で攪拌した。その中に、水酸化カリウム0.8gを水114gに溶かした溶液をゆっくりと滴下し、滴下後に50℃で6時間攪拌し、反応させて、反応液を得た。次に、反応液に酢酸0.9gを加え、減圧して揮発成分を除去し、酢酸カリウムをろ過により除去して、ポリマー(B)を得た。 (Synthesis Example 2) Synthesis of First Organopolysiloxane In a 1000 mL separable flask equipped with a thermometer, a dropping device and a stirrer, 56 g of divinyltetramethyldisiloxane, 122 g of dimethyldimethoxysilane, and 366 g of diphenyldimethoxysilane were added, and 50 Stir at ° C. A solution obtained by dissolving 0.8 g of potassium hydroxide in 114 g of water was slowly dropped therein, and after the dropwise addition, the mixture was stirred at 50 ° C. for 6 hours and reacted to obtain a reaction solution. Next, 0.9 g of acetic acid was added to the reaction solution, the pressure was reduced to remove volatile components, and potassium acetate was removed by filtration to obtain a polymer (B).
温度計、滴下装置及び攪拌機を備えた1000mLのセパラブルフラスコに、ジメチルジメトキシシラン90.2g、メチルトリメトキシシラン217g、ビニルトリメトキシシラン31g、1,1,3,3-テトラメチルジシロキサン40g、及びトリメチルメトキシシラン16gを入れ、50℃で攪拌した。その中に、塩酸2.0gと水134gの溶液をゆっくりと滴下し、滴下後に50℃で6時間攪拌し、反応させて、反応液を得た。次に、減圧して揮発成分を除去してポリマーを得た。得られたポリマーにヘキサン150gと酢酸エチル150gとを添加し、イオン交換水300gで10回洗浄を行い、減圧して揮発成分を除去してポリマー(C)を得た。 (Synthesis Example 3) Synthesis of Second Organopolysiloxane In a 1000 mL separable flask equipped with a thermometer, a dropping device and a stirrer, 90.2 g of dimethyldimethoxysilane, 217 g of methyltrimethoxysilane, 31 g of vinyltrimethoxysilane, 1 , 1,3,3-tetramethyldisiloxane and 16 g of trimethylmethoxysilane were added and stirred at 50 ° C. Into this, a solution of 2.0 g of hydrochloric acid and 134 g of water was slowly added dropwise. After the addition, the mixture was stirred at 50 ° C. for 6 hours and reacted to obtain a reaction solution. Next, the polymer was obtained by removing the volatile component under reduced pressure. To the obtained polymer, 150 g of hexane and 150 g of ethyl acetate were added, washed 10 times with 300 g of ion-exchanged water, reduced in pressure to remove volatile components, and polymer (C) was obtained.
温度計、滴下装置及び攪拌機を備えた1000mLのセパラブルフラスコに、トリメチルメトキシシラン31g、1,1,3,3-テトラメチルジシロキサン40g、ジフェニルジメトキシシラン110g、フェニルトリメトキシシラン268g、及びビニルトリメトキシシラン45gを入れ、50℃で攪拌した。その中に、塩酸1.4gと水116gの溶液をゆっくりと滴下し、滴下後に50℃で6時間攪拌し、反応させて、反応液を得た。次に、減圧して揮発成分を除去してポリマーを得た。得られたポリマーにヘキサン150gと酢酸エチル150gとを添加し、イオン交換水300gで10回洗浄を行い、減圧して揮発成分を除去してポリマー(D)を得た。 Synthesis Example 4 Synthesis of Second Organopolysiloxane A 1000 mL separable flask equipped with a thermometer, a dropping device and a stirrer was charged with 31 g of trimethylmethoxysilane, 40 g of 1,1,3,3-tetramethyldisiloxane, diphenyl. 110 g of dimethoxysilane, 268 g of phenyltrimethoxysilane, and 45 g of vinyltrimethoxysilane were added and stirred at 50 ° C. Into this, a solution of 1.4 g of hydrochloric acid and 116 g of water was slowly added dropwise, and after the addition, the mixture was stirred at 50 ° C. for 6 hours and reacted to obtain a reaction solution. Next, the polymer was obtained by removing the volatile component under reduced pressure. To the obtained polymer, 150 g of hexane and 150 g of ethyl acetate were added, washed 10 times with 300 g of ion-exchanged water, reduced in pressure to remove volatile components, and polymer (D) was obtained.
温度計、滴下装置及び攪拌機を備えた1Lのセパラブルフラスコに、ジメチルジメトキシシラン474g、ジフェニルジメトキシシラン10g、1,3-ジビニル-1,1,3,3-テトラメチルジシロキサン1.2g、及びジメチルホルムアミド200gを入れ、50℃で攪拌した。その中に、水酸化カリウム2.2gを水144gに溶かした溶液をゆっくりと滴下し、滴下後に50℃で2時間攪拌して反応させ、さらに85℃に昇温して2時間、105℃に昇温して2時間と反応温度を昇温しながら反応を行なって反応液を得た。次に、減圧して揮発成分を除去し、反応液に酢酸2.4gを加え、減圧下で加熱した。その後、酢酸カリウムをろ過により除去して、ポリマー(E)を得た。 Synthesis Example 5 Synthesis of First Organopolysiloxane A 1 L separable flask equipped with a thermometer, a dropping device and a stirrer was charged with 474 g of dimethyldimethoxysilane, 10 g of diphenyldimethoxysilane, 1,3-divinyl-1,1, 1.2 g of 3,3-tetramethyldisiloxane and 200 g of dimethylformamide were added and stirred at 50 ° C. A solution prepared by dissolving 2.2 g of potassium hydroxide in 144 g of water was slowly added dropwise thereto, and after the dropwise addition, the mixture was stirred at 50 ° C. for 2 hours to react, further heated to 85 ° C. and heated to 105 ° C. for 2 hours. The reaction was carried out while raising the temperature and raising the reaction temperature for 2 hours to obtain a reaction solution. Next, volatile components were removed under reduced pressure, 2.4 g of acetic acid was added to the reaction solution, and the mixture was heated under reduced pressure. Thereafter, potassium acetate was removed by filtration to obtain a polymer (E).
温度計、滴下装置及び攪拌機を備えた1Lのセパラブルフラスコに、ジメチルジメトキシシラン150g、メチルトリメトキシシラン360g、ビニルトリメトキシシラン52g、1,1,3,3-テトラメチルジシロキサン67g、及びトリメチルメトキシシラン21gを入れ、50℃で攪拌した。その中に、塩酸2.6gと水220gの溶液をゆっくりと滴下し、滴下後に50℃で8時間攪拌し、反応させて、反応液を得た。次に、減圧して揮発成分を除去してポリマーを得た。得られたポリマーにヘキサン150gと酢酸エチル150gとを添加し、イオン交換水300gで10回洗浄を行い、減圧して揮発成分を除去してポリマー(F)を得た。 (Synthesis Example 6) Synthesis of Second Organopolysiloxane Into a 1 L separable flask equipped with a thermometer, a dropping device and a stirrer, 150 g of dimethyldimethoxysilane, 360 g of methyltrimethoxysilane, 52 g of vinyltrimethoxysilane, 1,1 , 3,3-tetramethyldisiloxane (67 g) and trimethylmethoxysilane (21 g) were added and stirred at 50 ° C. Into this, a solution of 2.6 g of hydrochloric acid and 220 g of water was slowly added dropwise. After the addition, the solution was stirred at 50 ° C. for 8 hours and reacted to obtain a reaction solution. Next, the polymer was obtained by removing the volatile component under reduced pressure. To the obtained polymer, 150 g of hexane and 150 g of ethyl acetate were added, washed 10 times with 300 g of ion-exchanged water, reduced in pressure to remove volatile components, and polymer (F) was obtained.
ポリマーA(10g)、ポリマーC(10g)、白金の1,3-ジビニル-1,1,3,3-テトラメチルジシロキサン錯体(硬化性組成物全体に対して白金金属が重量単位で10ppmとなる量)、及び3-ウレイドプロピルトリエトキシシラン(0.2g)を混合し、脱泡を行い、光半導体装置用硬化性組成物を得た。 Example 1
Polymer A (10 g), Polymer C (10 g), 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex of platinum (the platinum metal is 10 ppm by weight with respect to the entire curable composition) And 3-ureidopropyltriethoxysilane (0.2 g) were mixed and defoamed to obtain a curable composition for optical semiconductor devices.
ポリマーA(10g)、ポリマーC(10g)、白金の1,3-ジビニル-1,1,3,3-テトラメチルジシロキサン錯体(硬化性組成物全体に対して白金金属が重量単位で10ppmとなる量)、及び3-イソシアネートプロピルトリエトキシシラン(0.2g)を混合し、脱泡を行い、光半導体装置用硬化性組成物を得た。 (Example 2)
Polymer A (10 g), Polymer C (10 g), 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex of platinum (the platinum metal is 10 ppm by weight with respect to the entire curable composition) And 3-isocyanatopropyltriethoxysilane (0.2 g) were mixed and defoamed to obtain a curable composition for optical semiconductor devices.
ポリマーA(10g)、ポリマーC(10g)、白金の1,3-ジビニル-1,1,3,3-テトラメチルジシロキサン錯体(硬化性組成物全体に対して白金金属が重量単位で10ppmとなる量)、3-ウレイドプロピルトリエトキシシラン(0.15g)、及び3-グリシドキシプロピルトリメトキシシラン(0.15g)を混合し、脱泡を行い、光半導体装置用硬化性組成物を得た。 (Example 3)
Polymer A (10 g), Polymer C (10 g), 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex of platinum (the platinum metal is 10 ppm by weight with respect to the entire curable composition) 2), 3-ureidopropyltriethoxysilane (0.15 g), and 3-glycidoxypropyltrimethoxysilane (0.15 g) are mixed and defoamed to obtain a curable composition for optical semiconductor devices. Obtained.
ポリマーA(10g)、ポリマーC(10g)、白金の1,3-ジビニル-1,1,3,3-テトラメチルジシロキサン錯体(硬化性組成物全体に対して白金金属が重量単位で10ppmとなる量)、3-ウレイドプロピルトリエトキシシラン(0.15g)、及び2-(3,4-エポキシシクロヘキシル)エチルトリメトキシシラン(0.15g)を混合し、脱泡を行い、光半導体装置用硬化性組成物を得た。 (Example 4)
Polymer A (10 g), Polymer C (10 g), 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex of platinum (the platinum metal is 10 ppm by weight with respect to the entire curable composition) ), 3-ureidopropyltriethoxysilane (0.15 g), and 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane (0.15 g) are mixed and degassed for use in an optical semiconductor device. A curable composition was obtained.
ポリマーA(10g)、ポリマーC(10g)、白金の1,3-ジビニル-1,1,3,3-テトラメチルジシロキサン錯体(硬化性組成物全体に対して白金金属が重量単位で10ppmとなる量)、3-ウレイドプロピルトリエトキシシラン(0.15g)、及びビニルトリメトキシシラン(0.15g)を混合し、脱泡を行い、光半導体装置用硬化性組成物を得た。 (Example 5)
Polymer A (10 g), Polymer C (10 g), 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex of platinum (the platinum metal is 10 ppm by weight with respect to the entire curable composition) ), 3-ureidopropyltriethoxysilane (0.15 g), and vinyltrimethoxysilane (0.15 g) were mixed and defoamed to obtain a curable composition for optical semiconductor devices.
ポリマーA(10g)、ポリマーC(10g)、白金の1,3-ジビニル-1,1,3,3-テトラメチルジシロキサン錯体(硬化性組成物全体に対して白金金属が重量単位で10ppmとなる量)、3-ウレイドプロピルトリエトキシシラン(0.15g)、及び3―メタクリロキシプロピルトリメトキシシラン(0.15g)を混合し、脱泡を行い、光半導体装置用硬化性組成物を得た。 (Example 6)
Polymer A (10 g), Polymer C (10 g), 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex of platinum (the platinum metal is 10 ppm by weight with respect to the entire curable composition) 2), 3-ureidopropyltriethoxysilane (0.15 g), and 3-methacryloxypropyltrimethoxysilane (0.15 g) are mixed and degassed to obtain a curable composition for an optical semiconductor device. It was.
ポリマーA(10g)、ポリマーC(10g)、白金の1,3-ジビニル-1,1,3,3-テトラメチルジシロキサン錯体(硬化性組成物全体に対して白金金属が重量単位で10ppmとなる量)、3-ウレイドプロピルトリエトキシシラン(0.10g)、3-グリシドキシプロピルトリメトキシシラン(0.10g)、及びビニルトリメトキシシラン(0.10g)を混合し、脱泡を行い、光半導体装置用硬化性組成物を得た。 (Example 7)
Polymer A (10 g), Polymer C (10 g), 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex of platinum (the platinum metal is 10 ppm by weight with respect to the entire curable composition) 3), 3-ureidopropyltriethoxysilane (0.10 g), 3-glycidoxypropyltrimethoxysilane (0.10 g), and vinyltrimethoxysilane (0.10 g) are mixed and defoamed. A curable composition for an optical semiconductor device was obtained.
ポリマーA(10g)、ポリマーC(10g)、白金の1,3-ジビニル-1,1,3,3-テトラメチルジシロキサン錯体(硬化性組成物全体に対して白金金属が重量単位で10ppmとなる量)、3-イソシアネートプロピルトリエトキシシラン(0.15g)、及び3-グリシドキシプロピルトリメトキシシラン(0.15g)を混合し、脱泡を行い、光半導体装置用硬化性組成物を得た。 (Example 8)
Polymer A (10 g), Polymer C (10 g), 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex of platinum (the platinum metal is 10 ppm by weight with respect to the entire curable composition) ), 3-isocyanatopropyltriethoxysilane (0.15 g), and 3-glycidoxypropyltrimethoxysilane (0.15 g) are mixed and degassed to obtain a curable composition for optical semiconductor devices. Obtained.
ポリマーA(10g)、ポリマーC(10g)、白金の1,3-ジビニル-1,1,3,3-テトラメチルジシロキサン錯体(硬化性組成物全体に対して白金金属が重量単位で10ppmとなる量)、3-イソシアネートプロピルトリエトキシシラン(0.15g)、及び2-(3,4-エポキシシクロヘキシル)エチルトリメトキシシラン(0.15g)を混合し、脱泡を行い、光半導体装置用硬化性組成物を得た。 Example 9
Polymer A (10 g), Polymer C (10 g), 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex of platinum (the platinum metal is 10 ppm by weight with respect to the entire curable composition) ), 3-isocyanatopropyltriethoxysilane (0.15 g), and 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane (0.15 g) are mixed and degassed for use in an optical semiconductor device. A curable composition was obtained.
ポリマーA(10g)、ポリマーC(10g)、白金の1,3-ジビニル-1,1,3,3-テトラメチルジシロキサン錯体(硬化性組成物全体に対して白金金属が重量単位で10ppmとなる量)、3-イソシアネートプロピルトリエトキシシラン(0.15g)、及びビニルトリメトキシシラン(0.15g)を混合し、脱泡を行い、光半導体装置用硬化性組成物を得た。 (Example 10)
Polymer A (10 g), Polymer C (10 g), 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex of platinum (the platinum metal is 10 ppm by weight with respect to the entire curable composition) ), 3-isocyanatopropyltriethoxysilane (0.15 g), and vinyltrimethoxysilane (0.15 g) were mixed and defoamed to obtain a curable composition for optical semiconductor devices.
ポリマーA(10g)、ポリマーC(10g)、白金の1,3-ジビニル-1,1,3,3-テトラメチルジシロキサン錯体(硬化性組成物全体に対して白金金属が重量単位で10ppmとなる量)、3-イソシアネートプロピルトリエトキシシラン(0.15g)、及び3―メタクリロキシプロピルトリメトキシシラン(0.15g)を混合し、脱泡を行い、光半導体装置用硬化性組成物を得た。 (Example 11)
Polymer A (10 g), Polymer C (10 g), 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex of platinum (the platinum metal is 10 ppm by weight with respect to the entire curable composition) 2), 3-isocyanatopropyltriethoxysilane (0.15 g), and 3-methacryloxypropyltrimethoxysilane (0.15 g) are mixed and defoamed to obtain a curable composition for optical semiconductor devices. It was.
ポリマーA(10g)、ポリマーC(10g)、白金の1,3-ジビニル-1,1,3,3-テトラメチルジシロキサン錯体(硬化性組成物全体に対して白金金属が重量単位で10ppmとなる量)、3-イソシアネートプロピルトリエトキシシラン(0.10g)、3-グリシドキシプロピルトリメトキシシラン(0.10g)、及びビニルトリメトキシシラン(0.10g)を混合し、脱泡を行い、光半導体装置用硬化性組成物を得た。 Example 12
Polymer A (10 g), Polymer C (10 g), 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex of platinum (the platinum metal is 10 ppm by weight with respect to the entire curable composition) 3), 3-isocyanatopropyltriethoxysilane (0.10 g), 3-glycidoxypropyltrimethoxysilane (0.10 g), and vinyltrimethoxysilane (0.10 g) are mixed and defoamed. A curable composition for an optical semiconductor device was obtained.
ポリマーB(10g)、ポリマーD(10g)、白金の1,3-ジビニル-1,1,3,3-テトラメチルジシロキサン錯体(硬化性組成物全体に対して白金金属が重量単位で10ppmとなる量)、及び3-ウレイドプロピルトリエトキシシラン(0.2g)を混合し、脱泡を行い、光半導体装置用硬化性組成物を得た。 (Example 13)
Polymer B (10 g), Polymer D (10 g), platinum 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex (platinum metal is 10 ppm by weight with respect to the entire curable composition) And 3-ureidopropyltriethoxysilane (0.2 g) were mixed and defoamed to obtain a curable composition for optical semiconductor devices.
ポリマーB(10g)、ポリマーD(10g)、白金の1,3-ジビニル-1,1,3,3-テトラメチルジシロキサン錯体(硬化性組成物全体に対して白金金属が重量単位で10ppmとなる量)、及び3-イソシアネートプロピルトリエトキシシラン(0.2g)を混合し、脱泡を行い、光半導体装置用硬化性組成物を得た。 (Example 14)
Polymer B (10 g), Polymer D (10 g), platinum 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex (platinum metal is 10 ppm by weight with respect to the entire curable composition) And 3-isocyanatopropyltriethoxysilane (0.2 g) were mixed and defoamed to obtain a curable composition for optical semiconductor devices.
ポリマーB(10g)、ポリマーD(10g)、白金の1,3-ジビニル-1,1,3,3-テトラメチルジシロキサン錯体(硬化性組成物全体に対して白金金属が重量単位で10ppmとなる量)、3-ウレイドプロピルトリエトキシシラン(0.15g)、及び3-グリシドキシプロピルトリメトキシシラン(0.15g)を混合し、脱泡を行い、光半導体装置用硬化性組成物を得た。 (Example 15)
Polymer B (10 g), Polymer D (10 g), platinum 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex (platinum metal is 10 ppm by weight with respect to the entire curable composition) 2), 3-ureidopropyltriethoxysilane (0.15 g), and 3-glycidoxypropyltrimethoxysilane (0.15 g) are mixed and defoamed to obtain a curable composition for optical semiconductor devices. Obtained.
ポリマーB(10g)、ポリマーD(10g)、白金の1,3-ジビニル-1,1,3,3-テトラメチルジシロキサン錯体(硬化性組成物全体に対して白金金属が重量単位で10ppmとなる量)、3-ウレイドプロピルトリエトキシシラン(0.15g)、及びビニルトリメトキシシラン(0.15g)を混合し、脱泡を行い、光半導体装置用硬化性組成物を得た。 (Example 16)
Polymer B (10 g), Polymer D (10 g), platinum 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex (platinum metal is 10 ppm by weight with respect to the entire curable composition) ), 3-ureidopropyltriethoxysilane (0.15 g), and vinyltrimethoxysilane (0.15 g) were mixed and defoamed to obtain a curable composition for optical semiconductor devices.
ポリマーB(10g)、ポリマーD(10g)、白金の1,3-ジビニル-1,1,3,3-テトラメチルジシロキサン錯体(硬化性組成物全体に対して白金金属が重量単位で10ppmとなる量)、3-ウレイドプロピルトリエトキシシラン(0.10g)、3-グリシドキシプロピルトリメトキシシラン(0.10g)、及びビニルトリメトキシシラン(0.10g)を混合し、脱泡を行い、光半導体装置用硬化性組成物を得た。 (Example 17)
Polymer B (10 g), Polymer D (10 g), platinum 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex (platinum metal is 10 ppm by weight with respect to the entire curable composition) 3), 3-ureidopropyltriethoxysilane (0.10 g), 3-glycidoxypropyltrimethoxysilane (0.10 g), and vinyltrimethoxysilane (0.10 g) are mixed and defoamed. A curable composition for an optical semiconductor device was obtained.
ポリマーB(10g)、ポリマーD(10g)、白金の1,3-ジビニル-1,1,3,3-テトラメチルジシロキサン錯体(硬化性組成物全体に対して白金金属が重量単位で10ppmとなる量)、3-イソシアネートプロピルトリエトキシシラン(0.15g)、及び3-グリシドキシプロピルトリメトキシシラン(0.15g)を混合し、脱泡を行い、光半導体装置用硬化性組成物を得た。 (Example 18)
Polymer B (10 g), Polymer D (10 g), platinum 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex (platinum metal is 10 ppm by weight with respect to the entire curable composition) ), 3-isocyanatopropyltriethoxysilane (0.15 g), and 3-glycidoxypropyltrimethoxysilane (0.15 g) are mixed and degassed to obtain a curable composition for optical semiconductor devices. Obtained.
ポリマーB(10g)、ポリマーD(10g)、白金の1,3-ジビニル-1,1,3,3-テトラメチルジシロキサン錯体(硬化性組成物全体に対して白金金属が重量単位で10ppmとなる量)、3-イソシアネートプロピルトリエトキシシラン(0.15g)、及びビニルトリメトキシシラン(0.15g)を混合し、脱泡を行い、光半導体装置用硬化性組成物を得た。 (Example 19)
Polymer B (10 g), Polymer D (10 g), platinum 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex (platinum metal is 10 ppm by weight with respect to the entire curable composition) ), 3-isocyanatopropyltriethoxysilane (0.15 g), and vinyltrimethoxysilane (0.15 g) were mixed and defoamed to obtain a curable composition for optical semiconductor devices.
ポリマーB(10g)、ポリマーD(10g)、白金の1,3-ジビニル-1,1,3,3-テトラメチルジシロキサン錯体(硬化性組成物全体に対して白金金属が重量単位で10ppmとなる量)、3-イソシアネートプロピルトリエトキシシラン(0.10g)、3-グリシドキシプロピルトリメトキシシラン(0.10g)、及びビニルトリメトキシシラン(0.10g)を混合し、脱泡を行い、光半導体装置用硬化性組成物を得た。 (Example 20)
Polymer B (10 g), Polymer D (10 g), platinum 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex (platinum metal is 10 ppm by weight with respect to the entire curable composition) 3), 3-isocyanatopropyltriethoxysilane (0.10 g), 3-glycidoxypropyltrimethoxysilane (0.10 g), and vinyltrimethoxysilane (0.10 g) are mixed and defoamed. A curable composition for an optical semiconductor device was obtained.
ポリマーA(10g)、ポリマーC(10g)、白金の1,3-ジビニル-1,1,3,3-テトラメチルジシロキサン錯体(硬化性組成物全体に対して白金金属が重量単位で10ppmとなる量)、及び3-グリシドキシプロピルトリメトキシシラン(0.2g)を混合し、脱泡を行い、光半導体装置用硬化性組成物を得た。 (Comparative Example 1)
Polymer A (10 g), Polymer C (10 g), 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex of platinum (the platinum metal is 10 ppm by weight with respect to the entire curable composition) And 3-glycidoxypropyltrimethoxysilane (0.2 g) were mixed and defoamed to obtain a curable composition for optical semiconductor devices.
ポリマーA(10g)、ポリマーC(10g)、白金の1,3-ジビニル-1,1,3,3-テトラメチルジシロキサン錯体(硬化性組成物全体に対して白金金属が重量単位で10ppmとなる量)、及び2-(3,4-エポキシシクロヘキシル)エチルトリメトキシシラン(0.2g)を混合し、脱泡を行い、光半導体装置用硬化性組成物を得た。 (Comparative Example 2)
Polymer A (10 g), Polymer C (10 g), 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex of platinum (the platinum metal is 10 ppm by weight with respect to the entire curable composition) And 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane (0.2 g) were mixed and defoamed to obtain a curable composition for optical semiconductor devices.
ポリマーA(10g)、ポリマーC(10g)、白金の1,3-ジビニル-1,1,3,3-テトラメチルジシロキサン錯体(硬化性組成物全体に対して白金金属が重量単位で10ppmとなる量)、及びビニルトリメトキシシラン(0.2g)を混合し、脱泡を行い、光半導体装置用硬化性組成物を得た。 (Comparative Example 3)
Polymer A (10 g), Polymer C (10 g), 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex of platinum (the platinum metal is 10 ppm by weight with respect to the entire curable composition) And vinyltrimethoxysilane (0.2 g) were mixed and defoamed to obtain a curable composition for optical semiconductor devices.
ポリマーA(10g)、ポリマーC(10g)、白金の1,3-ジビニル-1,1,3,3-テトラメチルジシロキサン錯体(硬化性組成物全体に対して白金金属が重量単位で10ppmとなる量)、及び3―メタクリロキシプロピルトリメトキシシラン(0.2g)を混合し、脱泡を行い、光半導体装置用硬化性組成物を得た。 (Comparative Example 4)
Polymer A (10 g), Polymer C (10 g), 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex of platinum (the platinum metal is 10 ppm by weight with respect to the entire curable composition) And 3-methacryloxypropyltrimethoxysilane (0.2 g) were mixed and defoamed to obtain a curable composition for optical semiconductor devices.
ポリマーB(10g)、ポリマーD(10g)、白金の1,3-ジビニル-1,1,3,3-テトラメチルジシロキサン錯体(硬化性組成物全体に対して白金金属が重量単位で10ppmとなる量)、及び3-グリシドキシプロピルトリメトキシシラン(0.2g)を混合し、脱泡を行い、光半導体装置用硬化性組成物を得た。 (Comparative Example 5)
Polymer B (10 g), Polymer D (10 g), platinum 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex (platinum metal is 10 ppm by weight with respect to the entire curable composition) And 3-glycidoxypropyltrimethoxysilane (0.2 g) were mixed and defoamed to obtain a curable composition for optical semiconductor devices.
ポリマーB(10g)、ポリマーD(10g)、白金の1,3-ジビニル-1,1,3,3-テトラメチルジシロキサン錯体(硬化性組成物全体に対して白金金属が重量単位で10ppmとなる量)、及びビニルトリメトキシシラン(0.2g)を混合し、脱泡を行い、光半導体装置用硬化性組成物を得た。 (Comparative Example 6)
Polymer B (10 g), Polymer D (10 g), platinum 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex (platinum metal is 10 ppm by weight with respect to the entire curable composition) And vinyltrimethoxysilane (0.2 g) were mixed and defoamed to obtain a curable composition for optical semiconductor devices.
ポリマーE(10g)、ポリマーF(10g)、白金の1,3-ジビニル-1,1,3,3-テトラメチルジシロキサン錯体(硬化性組成物全体に対して白金金属が重量単位で10ppmとなる量)、及び3-ウレイドプロピルトリエトキシシラン(0.2g)を混合し、脱泡を行い、光半導体装置用硬化性組成物を得た。 (Example 21)
Polymer E (10 g), Polymer F (10 g), platinum 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex (platinum metal is 10 ppm by weight with respect to the entire curable composition) And 3-ureidopropyltriethoxysilane (0.2 g) were mixed and defoamed to obtain a curable composition for optical semiconductor devices.
ポリマーE(10g)、ポリマーF(10g)、白金の1,3-ジビニル-1,1,3,3-テトラメチルジシロキサン錯体(硬化性組成物全体に対して白金金属が重量単位で10ppmとなる量)、及び3-イソシアネートプロピルトリエトキシシラン(0.2g)を混合し、脱泡を行い、光半導体装置用硬化性組成物を得た。 (Example 22)
Polymer E (10 g), Polymer F (10 g), platinum 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex (platinum metal is 10 ppm by weight with respect to the entire curable composition) And 3-isocyanatopropyltriethoxysilane (0.2 g) were mixed and defoamed to obtain a curable composition for optical semiconductor devices.
ポリマーE(10g)、ポリマーF(10g)、白金の1,3-ジビニル-1,1,3,3-テトラメチルジシロキサン錯体(硬化性組成物全体に対して白金金属が重量単位で10ppmとなる量)、3-ウレイドプロピルトリエトキシシラン(0.15g)、及び3-グリシドキシプロピルトリメトキシシラン(0.15g)を混合し、脱泡を行い、光半導体装置用硬化性組成物を得た。 (Example 23)
Polymer E (10 g), Polymer F (10 g), platinum 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex (platinum metal is 10 ppm by weight with respect to the entire curable composition) 2), 3-ureidopropyltriethoxysilane (0.15 g), and 3-glycidoxypropyltrimethoxysilane (0.15 g) are mixed and defoamed to obtain a curable composition for optical semiconductor devices. Obtained.
ポリマーE(10g)、ポリマーF(10g)、白金の1,3-ジビニル-1,1,3,3-テトラメチルジシロキサン錯体(硬化性組成物全体に対して白金金属が重量単位で10ppmとなる量)、3-ウレイドプロピルトリエトキシシラン(0.15g)、及びビニルトリメトキシシラン(0.15g)を混合し、脱泡を行い、光半導体装置用硬化性組成物を得た。 (Example 24)
Polymer E (10 g), Polymer F (10 g), platinum 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex (platinum metal is 10 ppm by weight with respect to the entire curable composition) ), 3-ureidopropyltriethoxysilane (0.15 g), and vinyltrimethoxysilane (0.15 g) were mixed and defoamed to obtain a curable composition for optical semiconductor devices.
ポリマーE(10g)、ポリマーF(10g)、白金の1,3-ジビニル-1,1,3,3-テトラメチルジシロキサン錯体(硬化性組成物全体に対して白金金属が重量単位で10ppmとなる量)、3-ウレイドプロピルトリエトキシシラン(0.10g)、3-グリシドキシプロピルトリメトキシシラン(0.10g)、及びビニルトリメトキシシラン(0.10g)を混合し、脱泡を行い、光半導体装置用硬化性組成物を得た。 (Example 25)
Polymer E (10 g), Polymer F (10 g), platinum 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex (platinum metal is 10 ppm by weight with respect to the entire curable composition) 3), 3-ureidopropyltriethoxysilane (0.10 g), 3-glycidoxypropyltrimethoxysilane (0.10 g), and vinyltrimethoxysilane (0.10 g) are mixed and defoamed. A curable composition for an optical semiconductor device was obtained.
ポリマーE(10g)、ポリマーF(10g)、白金の1,3-ジビニル-1,1,3,3-テトラメチルジシロキサン錯体(硬化性組成物全体に対して白金金属が重量単位で10ppmとなる量)、3-イソシアネートプロピルトリエトキシシラン(0.15g)、及び3-グリシドキシプロピルトリメトキシシラン(0.15g)を混合し、脱泡を行い、光半導体装置用硬化性組成物を得た。 (Example 26)
Polymer E (10 g), Polymer F (10 g), platinum 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex (platinum metal is 10 ppm by weight with respect to the entire curable composition) ), 3-isocyanatopropyltriethoxysilane (0.15 g), and 3-glycidoxypropyltrimethoxysilane (0.15 g) are mixed and degassed to obtain a curable composition for optical semiconductor devices. Obtained.
ポリマーE(10g)、ポリマーF(10g)、白金の1,3-ジビニル-1,1,3,3-テトラメチルジシロキサン錯体(硬化性組成物全体に対して白金金属が重量単位で10ppmとなる量)、3-イソシアネートプロピルトリエトキシシラン(0.15g)、及びビニルトリメトキシシラン(0.15g)を混合し、脱泡を行い、光半導体装置用硬化性組成物を得た。 (Example 27)
Polymer E (10 g), Polymer F (10 g), platinum 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex (platinum metal is 10 ppm by weight with respect to the entire curable composition) ), 3-isocyanatopropyltriethoxysilane (0.15 g), and vinyltrimethoxysilane (0.15 g) were mixed and defoamed to obtain a curable composition for optical semiconductor devices.
ポリマーE(10g)、ポリマーF(10g)、白金の1,3-ジビニル-1,1,3,3-テトラメチルジシロキサン錯体(硬化性組成物全体に対して白金金属が重量単位で10ppmとなる量)、3-イソシアネートプロピルトリエトキシシラン(0.10g)、3-グリシドキシプロピルトリメトキシシラン(0.10g)、及びビニルトリメトキシシラン(0.10g)を混合し、脱泡を行い、光半導体装置用硬化性組成物を得た。 (Example 28)
Polymer E (10 g), Polymer F (10 g), platinum 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex (platinum metal is 10 ppm by weight with respect to the entire curable composition) 3), 3-isocyanatopropyltriethoxysilane (0.10 g), 3-glycidoxypropyltrimethoxysilane (0.10 g), and vinyltrimethoxysilane (0.10 g) are mixed and defoamed. A curable composition for an optical semiconductor device was obtained.
ポリマーE(10g)、ポリマーF(10g)、白金の1,3-ジビニル-1,1,3,3-テトラメチルジシロキサン錯体(硬化性組成物全体に対して白金金属が重量単位で10ppmとなる量)、及び3-グリシドキシプロピルトリメトキシシラン(0.2g)を混合し、脱泡を行い、光半導体装置用硬化性組成物を得た。 (Comparative Example 7)
Polymer E (10 g), Polymer F (10 g), platinum 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex (platinum metal is 10 ppm by weight with respect to the entire curable composition) And 3-glycidoxypropyltrimethoxysilane (0.2 g) were mixed and defoamed to obtain a curable composition for optical semiconductor devices.
ポリマーE(10g)、ポリマーF(10g)、白金の1,3-ジビニル-1,1,3,3-テトラメチルジシロキサン錯体(硬化性組成物全体に対して白金金属が重量単位で10ppmとなる量)、及びビニルトリメトキシシラン(0.2g)を混合し、脱泡を行い、光半導体装置用硬化性組成物を得た。 (Comparative Example 8)
Polymer E (10 g), Polymer F (10 g), platinum 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex (platinum metal is 10 ppm by weight with respect to the entire curable composition) And vinyltrimethoxysilane (0.2 g) were mixed and defoamed to obtain a curable composition for optical semiconductor devices.
銀めっきされたリード電極付きポリフタルアミド製ハウジング材に、ダイボンド材によって主発光ピークが460nmの発光素子が実装されており、発光素子とリード電極とが金ワイヤーで接続されている構造において、得られた光半導体装置用硬化性組成物を注入し、150℃で2時間加熱して硬化させ、光半導体装置を作製した。この光半導体装置を用いて、下記のガス腐食試験、熱衝撃試験及び通電試験を実施した。 (Evaluation)
In a structure in which a light emitting element having a main emission peak of 460 nm is mounted on a silver-plated polyphthalamide housing material with a lead electrode by a die bond material, and the light emitting element and the lead electrode are connected by a gold wire. The obtained curable composition for optical semiconductor devices was poured and cured by heating at 150 ° C. for 2 hours to produce an optical semiconductor device. Using this optical semiconductor device, the following gas corrosion test, thermal shock test and energization test were carried out.
得られた光半導体装置を、40℃及び相対湿度90%RH雰囲気下のチャンバー内に入れ、硫化水素ガスの濃度が5ppm、二酸化硫黄ガスの濃度が15ppmとなるようにチャンバー内にガスを充填した。ガスの充填から、24時間後、48時間後、96時間後、168時間後及び500時間後にそれぞれ、銀めっきされたリード電極を目視で観察した。 (Gas corrosion test 1)
The obtained optical semiconductor device was placed in a chamber at 40 ° C. and a relative humidity of 90% RH, and the chamber was filled with gas so that the concentration of hydrogen sulfide gas was 5 ppm and the concentration of sulfur dioxide gas was 15 ppm. . From the gas filling, the lead electrodes plated with silver were visually observed after 24 hours, 48 hours, 96 hours, 168 hours and 500 hours.
得られた光半導体装置を用いて、かつ液槽式熱衝撃試験機(ESPEC社製「TSB-51」)を用いて、-50℃で5分間保持した後、135℃まで昇温し、135℃で5分間保持した後-50℃まで降温する過程を1サイクルとする冷熱サイクル試験を実施した。500サイクル後、1000サイクル後、1500サイクル後、2000サイクル後及び3000サイクル後にそれぞれ20個のサンプルを取り出した。 (Thermal shock test)
Using the obtained optical semiconductor device and using a liquid bath thermal shock tester (“TSB-51” manufactured by ESPEC), the temperature was maintained at −50 ° C. for 5 minutes, and then the temperature was increased to 135 ° C. A cold cycle test was conducted in which the process of holding at 5 ° C. for 5 minutes and then lowering the temperature to −50 ° C. was 1 cycle. 20 samples were taken out after 500 cycles, 1000 cycles, 1500 cycles, 2000 cycles and 3000 cycles, respectively.
作製直後の光半導体装置用硬化性組成物(作製直後の硬化性組成物)を用意した。さらに、作製直後の硬化性組成物を3時間室温(23℃)で放置して、3時間後の硬化性組成物を用意した。粘度測定装置(東機産業社製「VISCOMETER TV-22」)を用いて、作製直後の硬化性組成物の23℃及び10rpmでの粘度と、3時間後の硬化性組成物の23℃及び10rpmでの粘度とを測定した。3時間後の硬化性組成物における粘度値の作製直後の硬化性組成物における粘度値に対する粘度比(3時間後粘度値/初期粘度値)を求めた。 (Viscosity ratio)
A curable composition for optical semiconductor devices immediately after fabrication (a curable composition immediately after fabrication) was prepared. Furthermore, the curable composition immediately after preparation was allowed to stand at room temperature (23 ° C.) for 3 hours to prepare a curable composition after 3 hours. Using a viscosity measuring device (“VISCOMETER TV-22” manufactured by Toki Sangyo Co., Ltd.), the viscosity of the curable composition immediately after preparation at 23 ° C. and 10 rpm, and the temperature of the curable composition after 3 hours at 23 ° C. and 10 rpm And the viscosity was measured. The viscosity ratio (viscosity value after 3 hours / initial viscosity value) to the viscosity value in the curable composition immediately after production of the viscosity value in the curable composition after 3 hours was determined.
得られた光半導体装置について、23℃の温度下、光度測定装置(オプトロニックラボラトリーズ社製「OL770」)を用いて発光素子に20mAの電流を流した時の光度を測定した(以下、「初期光度」と称する)。 (High temperature and high humidity energization test)
About the obtained optical semiconductor device, the luminous intensity when a current of 20 mA was passed through the light emitting element was measured using a photometric measuring device (“OL770” manufactured by Optronic Laboratories) at a temperature of 23 ° C. (hereinafter, “initial” Called “luminosity”).
得られた光半導体装置を、発光面を上にしてスライドグラス上に両面テープで固定した。次に、容量120mLの蓋付きガラス容器に硫黄0.2gを入れ、光半導体装置を固定したスライドグラスを、光半導体装置と硫黄とが直接接触しないようにガラス容器内に配置した。その後、ガラス容器を密封して、80℃のオーブン内に入れた。オーブン内に入れてから、4時間後、8時間後、16時間後、24時間後及び48時間後にそれぞれ、銀めっきされたリード電極の変化を目視で観察した。ガス腐食試験2を下記の基準で判定した。なお、硬化物の接着対象物に対する接着性が低いと、銀電極が変色しやすくなる。 (Gas corrosion test 2)
The obtained optical semiconductor device was fixed with a double-sided tape on a slide glass with the light emitting surface facing up. Next, 0.2 g of sulfur was placed in a glass container with a lid having a capacity of 120 mL, and a slide glass on which the optical semiconductor device was fixed was placed in the glass container so that the optical semiconductor device and sulfur were not in direct contact. Thereafter, the glass container was sealed and placed in an oven at 80 ° C. After being placed in the oven, changes in the silver-plated lead electrode were visually observed after 4 hours, 8 hours, 16 hours, 24 hours and 48 hours, respectively. The
○○:銀電極に変化が見られない
○:銀電極の面積の10%程度が黒色に変色、もしくは、全面がうっすらと変色
△:銀電極の面積の半分程度が黒色に変色、もしくは、全面が茶色に変色
×:銀電極のほぼ全面が黒色に変色 [Criteria for gas corrosion test 2]
○○: No change in the silver electrode ○: About 10% of the area of the silver electrode changes to black, or the entire surface changes slightly △: About half of the area of the silver electrode changes to black, or the entire surface Changes to brown ×: almost the entire surface of the silver electrode changes to black
2…ハウジング
2a…内面
3…光半導体素子
4…封止剤
11…光半導体装置
12…封止剤
12a…表面
13…レンズ
21…光半導体装置
22…基板
22a…端子
23…光半導体素子
23a…電極
24…ボンディングワイヤー
25…レンズ DESCRIPTION OF SYMBOLS 1 ...
Claims (17)
- アルケニル基を2個以上有する第1のオルガノポリシロキサンと、
珪素原子に結合した水素原子を2個以上有する第2のオルガノポリシロキサンと、
ヒドロシリル化反応用触媒と、
ウレイド基又はイソシアネート基を有する第1のシラン化合物とを含む、光半導体装置用硬化性組成物。 A first organopolysiloxane having two or more alkenyl groups;
A second organopolysiloxane having two or more hydrogen atoms bonded to silicon atoms;
A catalyst for hydrosilylation reaction;
A curable composition for optical semiconductor devices, comprising a first silane compound having a ureido group or an isocyanate group. - 光半導体装置用封止剤又は光半導体装置用レンズ材料である、請求項1に記載の光半導体装置用硬化性組成物。 The curable composition for optical semiconductor devices according to claim 1, which is a sealant for optical semiconductor devices or a lens material for optical semiconductor devices.
- 前記第1のシラン化合物が、ウレイド基を有する、請求項1又は2に記載の光半導体装置用硬化性組成物。 The curable composition for optical semiconductor devices according to claim 1, wherein the first silane compound has a ureido group.
- 前記第1のシラン化合物が、下記式(S1)又は下記式(S2)で表される第1のシラン化合物である、請求項1又は2に記載の光半導体装置用硬化性組成物。
- 前記第1のシラン化合物が、前記式(S1)で表される第1のシラン化合物である、請求項4に記載の光半導体装置用硬化性組成物。 The curable composition for optical semiconductor devices according to claim 4, wherein the first silane compound is a first silane compound represented by the formula (S1).
- 前記式(S1)で表される第1のシラン化合物が、下記式(S1-1)で表される第1のシラン化合物である、請求項4又は5に記載の光半導体装置用硬化性組成物。
- 前記第1のオルガノポリシロキサンの数平均分子量が、500以上、200000以下であり、
前記第2のオルガノポリシロキサンの数平均分子量が、500以上、20000以下である、請求項1~6のいずれか1項に記載の光半導体装置用硬化性組成物。 The number average molecular weight of the first organopolysiloxane is 500 or more and 200000 or less,
The curable composition for optical semiconductor devices according to any one of claims 1 to 6, wherein the number average molecular weight of the second organopolysiloxane is 500 or more and 20000 or less. - エポキシ基、ビニル基又は(メタ)アクリロイル基を有する第2のシラン化合物をさらに含む、請求項1~7のいずれか1項に記載の光半導体装置用硬化性組成物。 The curable composition for optical semiconductor devices according to any one of claims 1 to 7, further comprising a second silane compound having an epoxy group, a vinyl group or a (meth) acryloyl group.
- 前記第2のシラン化合物が、3-グリシドキシプロピルトリメトキシシラン、2-(3,4-エポキシシクロヘキシル)エチルトリメトキシシラン、ビニルトリメトキシシラン又は3-(メタ)アクリロキシプロピルトリメトキシシランである、請求項8に記載の光半導体装置用硬化性組成物。 The second silane compound is 3-glycidoxypropyltrimethoxysilane, 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, vinyltrimethoxysilane or 3- (meth) acryloxypropyltrimethoxysilane. The curable composition for optical semiconductor devices according to claim 8.
- 前記第1,第2のオルガノポリシロキサンの合計100重量部に対して、前記第2のシラン化合物の含有量が0.01重量部以上、5重量部以下である、請求項8又は9に記載の光半導体装置用硬化性組成物。 The content of the second silane compound is 0.01 parts by weight or more and 5 parts by weight or less with respect to a total of 100 parts by weight of the first and second organopolysiloxanes. Curable composition for optical semiconductor devices.
- 前記第1のオルガノポリシロキサンが珪素原子に結合した水素原子を有さず、
前記第2のオルガノポリシロキサンが、アルケニル基を有する、請求項1~10のいずれか1項に記載の光半導体装置用硬化性組成物。 The first organopolysiloxane does not have a hydrogen atom bonded to a silicon atom;
The curable composition for optical semiconductor devices according to any one of claims 1 to 10, wherein the second organopolysiloxane has an alkenyl group. - 前記第1のオルガノポリシロキサンが、下記式(1A)で表され、アルケニル基及び珪素原子に結合したメチル基を有する第1のオルガノポリシロキサンであり、かつ前記第2のオルガノポリシロキサンが、下記式(51A)で表され、珪素原子に結合した水素原子及び珪素原子に結合したメチル基を有する第2のオルガノポリシロキサンであるか、又は、
前記第1のオルガノポリシロキサンが、下記式(1B)で表され、アリール基及びアルケニル基を有する第1のオルガノポリシロキサンであり、かつ前記第2のオルガノポリシロキサンが、下記式(51B)で表され、アリール基及び珪素原子に結合した水素原子を有する第2のオルガノポリシロキサンである、請求項1~11のいずれか1項に記載の光半導体装置用硬化性組成物。
The first organopolysiloxane is represented by the following formula (1B), is a first organopolysiloxane having an aryl group and an alkenyl group, and the second organopolysiloxane is represented by the following formula (51B). The curable composition for optical semiconductor devices according to any one of claims 1 to 11, which is a second organopolysiloxane represented by an aryl group and having a hydrogen atom bonded to a silicon atom.
- 前記式(1A)又は前記式(1B)で表される第1のオルガノポリシロキサンが、珪素原子に結合した水素原子を有さず、
前記式(51A)又は前記式(51B)で表される第2のオルガノポリシロキサンが、アルケニル基を有し、
前記式(51A)中、R51~R56は、少なくとも1個が水素原子を表し、少なくとも1個がメチル基を表し、少なくとも1個がアルケニル基を表し、水素原子、メチル基及びアルケニル基以外のR51~R56は、炭素数2~8の炭化水素基を表し、
前記式(51B)中、R51~R56は、少なくとも1個がアリール基を表し、少なくとも1個が水素原子を表し、少なくとも1個がアルケニル基を表し、アリール基、水素原子及びアルケニル基以外のR51~R56は、炭素数1~8の炭化水素基を表す、請求項12に記載の光半導体装置用硬化性組成物。 The first organopolysiloxane represented by the formula (1A) or the formula (1B) does not have a hydrogen atom bonded to a silicon atom,
The second organopolysiloxane represented by the formula (51A) or the formula (51B) has an alkenyl group,
In the formula (51A), at least one of R51 to R56 represents a hydrogen atom, at least one represents a methyl group, at least one represents an alkenyl group, and R51 other than a hydrogen atom, a methyl group, and an alkenyl group ~ R56 represents a hydrocarbon group having 2 to 8 carbon atoms,
In the formula (51B), at least one of R51 to R56 represents an aryl group, at least one represents a hydrogen atom, at least one represents an alkenyl group, and R51 other than an aryl group, a hydrogen atom and an alkenyl group 13. The curable composition for optical semiconductor devices according to claim 12, wherein -R56 represents a hydrocarbon group having 1 to 8 carbon atoms. - 前記式(51A)又は前記式(51B)で表される第2のオルガノポリシロキサンが、下記式(51-a)で表される構造単位を有する、請求項12又は13に記載の光半導体装置用硬化性組成物。
- 前記第1のオルガノポリシロキサンが前記式(1A)で表され、かつ前記第2のオルガノポリシロキサンが前記式(51A)で表される、請求項12~14のいずれか1項に記載の光半導体装置用硬化性組成物。 The light according to any one of claims 12 to 14, wherein the first organopolysiloxane is represented by the formula (1A), and the second organopolysiloxane is represented by the formula (51A). Curable composition for semiconductor devices.
- 前記第1のオルガノポリシロキサンが前記式(1B)で表され、かつ前記第2のオルガノポリシロキサンが前記式(51B)で表される、請求項12~14のいずれか1項に記載の光半導体装置用硬化性組成物。 The light according to any one of claims 12 to 14, wherein the first organopolysiloxane is represented by the formula (1B) and the second organopolysiloxane is represented by the formula (51B). Curable composition for semiconductor devices.
- 前記第1のオルガノポリシロキサン100重量部に対して、前記第2のオルガノポリシロキサンの含有量が10重量部以上、400重量部以下であり、
硬化性組成物中で、前記ヒドロシリル化反応用触媒の含有量は、金属原子の重量単位で0.01ppm以上、1000ppm以下であり、
前記第1,第2のオルガノポリシロキサンの合計100重量部に対して、前記第1のシラン化合物の含有量が0.01重量部以上、5重量部以下である、請求項1~16のいずれか1項に記載の光半導体装置用硬化性組成物。 The content of the second organopolysiloxane is 10 parts by weight or more and 400 parts by weight or less with respect to 100 parts by weight of the first organopolysiloxane.
In the curable composition, the content of the hydrosilylation reaction catalyst is 0.01 ppm or more and 1000 ppm or less in terms of weight units of metal atoms,
The content of the first silane compound is 0.01 parts by weight or more and 5 parts by weight or less with respect to a total of 100 parts by weight of the first and second organopolysiloxanes. The curable composition for optical semiconductor devices of Claim 1.
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CN103694709A (en) * | 2013-12-09 | 2014-04-02 | 华南理工大学 | Creepage-resistant tracking agent for addition-type liquid silicon rubber and preparation method and application thereof |
EP3162864A1 (en) * | 2015-11-02 | 2017-05-03 | Shin-Etsu Chemical Co., Ltd. | Adhesion promoter, addition curable organopolysiloxane resin composition and semiconductor apparatus |
JP2020070391A (en) * | 2018-11-01 | 2020-05-07 | 株式会社ダイセル | Curable epoxy resin composition |
JP2020070390A (en) * | 2018-11-01 | 2020-05-07 | 株式会社ダイセル | Curable epoxy resin composition |
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