WO2013031554A9 - エッチング液組成物およびエッチング方法 - Google Patents

エッチング液組成物およびエッチング方法 Download PDF

Info

Publication number
WO2013031554A9
WO2013031554A9 PCT/JP2012/070895 JP2012070895W WO2013031554A9 WO 2013031554 A9 WO2013031554 A9 WO 2013031554A9 JP 2012070895 W JP2012070895 W JP 2012070895W WO 2013031554 A9 WO2013031554 A9 WO 2013031554A9
Authority
WO
WIPO (PCT)
Prior art keywords
etching
liquid composition
etching liquid
group
organic compounds
Prior art date
Application number
PCT/JP2012/070895
Other languages
English (en)
French (fr)
Other versions
WO2013031554A1 (ja
Inventor
篤史 松井
木村　真弓
次広 田湖
Original Assignee
林純薬工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 林純薬工業株式会社 filed Critical 林純薬工業株式会社
Priority to US14/240,931 priority Critical patent/US9193904B2/en
Priority to SG2014012306A priority patent/SG2014012306A/en
Priority to CN201280042602.2A priority patent/CN103782373A/zh
Priority to KR1020147004529A priority patent/KR20140071337A/ko
Publication of WO2013031554A1 publication Critical patent/WO2013031554A1/ja
Publication of WO2013031554A9 publication Critical patent/WO2013031554A9/ja

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

　被処理基板上に形成されたシリコンを含む膜のエッチングを行う際に用いられるエッチング液組成物であって、エッチング液組成物は、含ヒドロキシ基有機化合物、含カルボニル基有機化合物、無機酸、および無機酸塩からなる群から選択される少なくとも一つと、フッ化水素酸と、フッ化アンモニウムと、有機酸とを含む。
PCT/JP2012/070895 2011-08-31 2012-08-17 エッチング液組成物およびエッチング方法 WO2013031554A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US14/240,931 US9193904B2 (en) 2011-08-31 2012-08-17 Etchant composition and etching method
SG2014012306A SG2014012306A (en) 2011-08-31 2012-08-17 Etching liquid composition and etching method
CN201280042602.2A CN103782373A (zh) 2011-08-31 2012-08-17 蚀刻液组合物以及蚀刻方法
KR1020147004529A KR20140071337A (ko) 2011-08-31 2012-08-17 에칭액 조성물 및 에칭 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011189633A JP5913869B2 (ja) 2011-08-31 2011-08-31 エッチング液組成物およびエッチング方法
JP2011-189633 2011-08-31

Publications (2)

Publication Number Publication Date
WO2013031554A1 WO2013031554A1 (ja) 2013-03-07
WO2013031554A9 true WO2013031554A9 (ja) 2014-03-20

Family

ID=47756048

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2012/070895 WO2013031554A1 (ja) 2011-08-31 2012-08-17 エッチング液組成物およびエッチング方法

Country Status (7)

Country Link
US (1) US9193904B2 (ja)
JP (1) JP5913869B2 (ja)
KR (1) KR20140071337A (ja)
CN (1) CN103782373A (ja)
SG (1) SG2014012306A (ja)
TW (1) TWI535827B (ja)
WO (1) WO2013031554A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105062491A (zh) * 2014-04-30 2015-11-18 王丽 一种ito膜刻蚀的方法

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2626891A3 (en) * 2012-02-07 2018-01-24 Rohm and Haas Electronic Materials LLC Activation process to improve metal adhesion
WO2016003729A1 (en) * 2014-06-30 2016-01-07 Entegris, Inc. Aqueous and semi-aqueous cleaners for the removal of post-etch residues with tungsten and cobalt compatibility
US9868902B2 (en) 2014-07-17 2018-01-16 Soulbrain Co., Ltd. Composition for etching
KR101539373B1 (ko) * 2014-07-17 2015-07-27 솔브레인 주식회사 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법
KR102242951B1 (ko) * 2014-08-12 2021-04-22 주식회사 이엔에프테크놀로지 실리콘 산화막 에칭액
US9362382B1 (en) * 2014-11-17 2016-06-07 United Microelectronics Corporation Method for forming semiconductor device with low sealing loss
CN104943059B (zh) * 2015-05-18 2017-03-15 广东兴锐电子科技股份有限公司 一种铝合金和塑料的复合体制作方法
JP6761166B2 (ja) * 2015-07-23 2020-09-23 セントラル硝子株式会社 ウェットエッチング方法及びエッチング液
US20170369821A1 (en) * 2016-06-24 2017-12-28 Samsung Display Co., Ltd. Cleaning composition for removing oxide and method of cleaning using the same
CN107663028A (zh) * 2016-07-29 2018-02-06 蓝思科技（长沙）有限公司 一种含蚀刻纹路图案的镀膜玻璃板的制备方法及玻璃板
CN106222756A (zh) * 2016-09-30 2016-12-14 杭州飞鹿新能源科技有限公司 用于金刚线切割单晶硅片制绒的添加剂及其应用方法
JP2018156963A (ja) * 2017-03-15 2018-10-04 株式会社リコー 電界効果型トランジスタ、表示素子、表示装置、システム、及びそれらの製造方法
US11186771B2 (en) * 2017-06-05 2021-11-30 Versum Materials Us, Llc Etching solution for selectively removing silicon nitride during manufacture of a semiconductor device
CN107151104A (zh) * 2017-06-12 2017-09-12 合肥市惠科精密模具有限公司 一种tft‑lcd玻璃基板蚀刻液添加剂
KR102421116B1 (ko) * 2017-06-22 2022-07-15 삼성디스플레이 주식회사 식각액 조성물 및 식각액 조성물을 이용한 배선 형성 방법
KR102450687B1 (ko) * 2017-10-11 2022-10-06 주식회사 이엔에프테크놀로지 실리콘 질화막 식각 조성물
US10889757B2 (en) 2017-10-19 2021-01-12 Fujifilm Electronic Materials U.S.A., Inc. Etching compositions
CN109694203A (zh) * 2017-10-24 2019-04-30 天津美泰真空技术有限公司 一种玻璃薄化工艺用预处理液
KR102371075B1 (ko) * 2018-03-21 2022-03-07 동우 화인켐 주식회사 알루미늄계 금속막용 식각 조성물
KR102554816B1 (ko) * 2018-04-23 2023-07-12 삼성디스플레이 주식회사 식각액 조성물 및 이를 이용한 금속 패턴의 제조 방법
US11560533B2 (en) 2018-06-26 2023-01-24 Versum Materials Us, Llc Post chemical mechanical planarization (CMP) cleaning
KR20240013860A (ko) 2018-11-15 2024-01-30 엔테그리스, 아이엔씨. 질화규소 에칭 조성물 및 방법
JP2021048369A (ja) * 2019-09-20 2021-03-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法、基板処理装置および基板処理液
KR20220126436A (ko) * 2021-03-09 2022-09-16 주식회사 이엔에프테크놀로지 디스플레이 기판용 식각액
CN116103047B (zh) * 2022-09-20 2024-03-12 湖北兴福电子材料股份有限公司 一种高选择性蚀刻掺杂氧化硅/碳氮化硅的蚀刻液
CN116162460A (zh) * 2022-12-26 2023-05-26 湖北兴福电子材料股份有限公司 一种防止侵蚀铝的缓冲氧化物蚀刻液
CN116023945B (zh) * 2022-12-27 2024-06-07 浙江奥首材料科技有限公司 蚀刻液组合物、蚀刻液及其制备方法
CN115799063A (zh) * 2023-01-31 2023-03-14 广州粤芯半导体技术有限公司 一种氧化物层的刻蚀方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6038022B2 (ja) 1976-03-10 1985-08-29 株式会社日立製作所 エツチング液
JPS59184532A (ja) 1983-04-05 1984-10-19 Oki Electric Ind Co Ltd 半導体装置の製造方法
US5700740A (en) * 1996-03-25 1997-12-23 Taiwan Semiconductor Manufacturing Company Ltd Prevention of corrosion of aluminum interconnects by removing corrosion-inducing species
JP3292108B2 (ja) 1997-09-01 2002-06-17 松下電器産業株式会社 エッチング液及びこれを用いた薄膜トランジスタの製造方法
US6117796A (en) * 1998-08-13 2000-09-12 International Business Machines Corporation Removal of silicon oxide
JP3903215B2 (ja) * 1998-11-24 2007-04-11 ダイキン工業株式会社 エッチング液
JP2000160367A (ja) * 1998-11-24 2000-06-13 Daikin Ind Ltd エッチレートが高速化されたエッチング液
WO2002089192A1 (en) * 2001-04-27 2002-11-07 Koninklijke Philips Electronics N.V. Method of wet etching an inorganic antireflection layer
JP4040425B2 (ja) * 2002-10-17 2008-01-30 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
JP3746032B2 (ja) * 2002-10-25 2006-02-15 ヤンマー農機株式会社 田植機の苗マット押さえ
JP2006098421A (ja) * 2003-06-10 2006-04-13 Daikin Ind Ltd シリコンを含有する反射防止膜および埋め込み材の除去液と除去方法
US7161324B1 (en) 2003-07-16 2007-01-09 Mitsubishi Denki Kabushiki Kaisha Device for estimating pole position of synchronous motor
JP4984372B2 (ja) 2003-08-06 2012-07-25 三菱化学株式会社 非水系電解液二次電池用セパレータ及びそれを用いた非水系電解液二次電池
WO2007111694A2 (en) * 2005-11-09 2007-10-04 Advanced Technology Materials, Inc. Composition and method for recycling semiconductor wafers having low-k dielectric materials thereon
KR100860367B1 (ko) * 2006-08-21 2008-09-25 제일모직주식회사 금속실리사이드막 대비 실리콘 산화막에 대한 상대적인 식각 선택성이 향상된 식각용액
US20100112728A1 (en) * 2007-03-31 2010-05-06 Advanced Technology Materials, Inc. Methods for stripping material for wafer reclamation
EP2342738A4 (en) * 2008-10-02 2013-04-17 Advanced Tech Materials USE OF TENSID / DETOINT MIXTURES FOR INCREASED METAL LOADING AND SURFACE PASSIVATION OF SILICON SUBSTRATES

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105062491A (zh) * 2014-04-30 2015-11-18 王丽 一种ito膜刻蚀的方法

Also Published As

Publication number Publication date
SG2014012306A (en) 2014-05-29
US9193904B2 (en) 2015-11-24
JP2013051371A (ja) 2013-03-14
US20140235064A1 (en) 2014-08-21
CN103782373A (zh) 2014-05-07
WO2013031554A1 (ja) 2013-03-07
KR20140071337A (ko) 2014-06-11
TWI535827B (zh) 2016-06-01
JP5913869B2 (ja) 2016-04-27
TW201323584A (zh) 2013-06-16

Similar Documents

Publication Publication Date Title
WO2013031554A9 (ja) エッチング液組成物およびエッチング方法
WO2012057467A3 (ko) 구리 함유 금속막 식각액 조성물 및 이를 이용한 식각 방법
WO2013140177A3 (en) Etched silicon structures, method of forming etched silicon structures and uses thereof
WO2011115371A3 (en) Etchant for metal wiring and method for manufacturing metal wiring using the same
WO2012057512A3 (ko) 화합물 반도체 장치 및 그 제조 방법
WO2013093504A3 (en) Etched silicon structures, method of forming etched silicon structures and uses thereof
MY170621A (en) Additive for preparing suede on polycrystalline silicon chip and use method thereof
WO2014102222A9 (fr) Procédé microélectronique de gravure d'une couche
WO2012174518A3 (en) Compositions and methods for selectively etching silicon nitride
IN2014CN03520A (ja)
IN2014CN04267A (ja)
TW201614840A (en) Semiconductor device and method for fabricating the same
WO2012106303A1 (en) Pharmaceutical formulations including an amine compound
AU2011359126B2 (en) Liquid cation exchanger
EA201792027A1 (ru) Способ краскоструйной печати
WO2011106203A3 (en) Spalling for a semiconductor substrate
SG10201601693VA (en) Component manipulator for the dynamic positioning of a substrate, coating method, as well as use of a component manipulator
WO2011103516A3 (en) Inhibitors of long and very long chain fatty acid metabolism as broad spectrum anti-virals
WO2013061313A8 (en) Method for manufacturing a protective layer against hf etching, semiconductor device provided with the protective layer and method for manufacturing the semiconductor device
WO2014049052A3 (de) Optoelektronisches bauelement und verfahren zum herstellen eines optoelektronischen bauelements
WO2010014657A3 (en) Passivation of aluminum nitride substrates
WO2012021026A3 (ko) 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭 방법 (1)
EP2573801A4 (en) ETCHING SOLUTION AND PROCESS FOR TREATING THE SURFACE OF A SILICON SUBSTRATE
WO2013056831A3 (de) Bohrer mit beschichtung
WO2013012195A3 (ko) 기판의 제조방법 및 이를 이용한 전자소자의 제조방법

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12828333

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase in:

Ref document number: 20147004529

Country of ref document: KR

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 14240931

Country of ref document: US

NENP Non-entry into the national phase in:

Ref country code: DE

122 Ep: pct app. not ent. europ. phase

Ref document number: 12828333

Country of ref document: EP

Kind code of ref document: A1