WO2013031554A9 - エッチング液組成物およびエッチング方法 - Google Patents

エッチング液組成物およびエッチング方法 Download PDF

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Publication number
WO2013031554A9
WO2013031554A9 PCT/JP2012/070895 JP2012070895W WO2013031554A9 WO 2013031554 A9 WO2013031554 A9 WO 2013031554A9 JP 2012070895 W JP2012070895 W JP 2012070895W WO 2013031554 A9 WO2013031554 A9 WO 2013031554A9
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WO
WIPO (PCT)
Prior art keywords
etching
liquid composition
etching liquid
group
organic compounds
Prior art date
Application number
PCT/JP2012/070895
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English (en)
French (fr)
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WO2013031554A1 (ja
Inventor
篤史 松井
木村　真弓
次広 田湖
Original Assignee
林純薬工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 林純薬工業株式会社 filed Critical 林純薬工業株式会社
Priority to CN201280042602.2A priority Critical patent/CN103782373A/zh
Priority to US14/240,931 priority patent/US9193904B2/en
Priority to KR1020147004529A priority patent/KR20140071337A/ko
Priority to SG2014012306A priority patent/SG2014012306A/en
Publication of WO2013031554A1 publication Critical patent/WO2013031554A1/ja
Publication of WO2013031554A9 publication Critical patent/WO2013031554A9/ja

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

　被処理基板上に形成されたシリコンを含む膜のエッチングを行う際に用いられるエッチング液組成物であって、エッチング液組成物は、含ヒドロキシ基有機化合物、含カルボニル基有機化合物、無機酸、および無機酸塩からなる群から選択される少なくとも一つと、フッ化水素酸と、フッ化アンモニウムと、有機酸とを含む。
PCT/JP2012/070895 2011-08-31 2012-08-17 エッチング液組成物およびエッチング方法 WO2013031554A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN201280042602.2A CN103782373A (zh) 2011-08-31 2012-08-17 蚀刻液组合物以及蚀刻方法
US14/240,931 US9193904B2 (en) 2011-08-31 2012-08-17 Etchant composition and etching method
KR1020147004529A KR20140071337A (ko) 2011-08-31 2012-08-17 에칭액 조성물 및 에칭 방법
SG2014012306A SG2014012306A (en) 2011-08-31 2012-08-17 Etching liquid composition and etching method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011-189633 2011-08-31
JP2011189633A JP5913869B2 (ja) 2011-08-31 2011-08-31 エッチング液組成物およびエッチング方法

Publications (2)

Publication Number Publication Date
WO2013031554A1 WO2013031554A1 (ja) 2013-03-07
WO2013031554A9 true WO2013031554A9 (ja) 2014-03-20

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2012/070895 WO2013031554A1 (ja) 2011-08-31 2012-08-17 エッチング液組成物およびエッチング方法

Country Status (7)

Country Link
US (1) US9193904B2 (ja)
JP (1) JP5913869B2 (ja)
KR (1) KR20140071337A (ja)
CN (1) CN103782373A (ja)
SG (1) SG2014012306A (ja)
TW (1) TWI535827B (ja)
WO (1) WO2013031554A1 (ja)

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CN105062491A (zh) * 2014-04-30 2015-11-18 王丽 一种ito膜刻蚀的方法

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US9362382B1 (en) * 2014-11-17 2016-06-07 United Microelectronics Corporation Method for forming semiconductor device with low sealing loss
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Publication number Priority date Publication date Assignee Title
CN105062491A (zh) * 2014-04-30 2015-11-18 王丽 一种ito膜刻蚀的方法

Also Published As

Publication number Publication date
JP2013051371A (ja) 2013-03-14
TWI535827B (zh) 2016-06-01
WO2013031554A1 (ja) 2013-03-07
KR20140071337A (ko) 2014-06-11
JP5913869B2 (ja) 2016-04-27
TW201323584A (zh) 2013-06-16
CN103782373A (zh) 2014-05-07
SG2014012306A (en) 2014-05-29
US9193904B2 (en) 2015-11-24
US20140235064A1 (en) 2014-08-21

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