WO2013027354A1 - 接合体、パワー半導体装置及びそれらの製造方法 - Google Patents
接合体、パワー半導体装置及びそれらの製造方法 Download PDFInfo
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- WO2013027354A1 WO2013027354A1 PCT/JP2012/005039 JP2012005039W WO2013027354A1 WO 2013027354 A1 WO2013027354 A1 WO 2013027354A1 JP 2012005039 W JP2012005039 W JP 2012005039W WO 2013027354 A1 WO2013027354 A1 WO 2013027354A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Definitions
- the present invention relates to a technique for joining members to be joined.
- the present invention relates to a junction, a power semiconductor device, and a method of manufacturing the same.
- the plate 2a in which the plating layer 8a was formed in the surface and the back, and the plate 2b in which the plating layer 8b was formed in the surface and the back are piled up.
- the plating layers 8a and 8b are made of nickel (Ni)
- the plates 2a and 2b are made of copper (Cu).
- the contact surfaces of the die 6a are brought into contact with the plate 2a via the plating layer 8a, and pressure is applied in the direction of arrow A.
- the contact surfaces of the die 6b are brought into contact with the plate 2b via the plating layer 8b, and pressure is applied in the direction of arrow B.
- the plated layers 8a and 8b pressed against each other can not follow the plastic flow of the plates 2a and 2b, and reach the breaking point and are divided.
- the pressure contact portion 5 constituted by a new surface is formed in the area of the plate bodies 2a and 2b where the plating layers 8a and 8b are divided.
- the oxide film moves following the division of the plating layers 8a and 8b, and each plate 2a , 2b exposed the new surface.
- the plating layers 8a and 8b having a ductility smaller than that of the plates 2a and 2b are provided on the plates 2a and 2b without removing the oxide film formed on the plates 2a and 2b, which are the objects to be pressed.
- the plates 2a and 2b can be joined together.
- Patent Document 2 there is a technique in which an oxide film removing solution is replaced with an oxidation inhibitor and bonding is performed (for example, see Patent Document 2).
- Patent Document 2 when joining metals which at least one side consists of copper, the joining surface of copper is made to contact with an oxide film removal liquid, the oxide film of this joining surface is removed, and an oxide film removal liquid is carried out to a joining surface of copper.
- the metal bonding surfaces of the metals to be bonded are brought into contact with each other while being attached, and heating / pressure is applied to replace the oxide film removing solution with an oxidation inhibitor for bonding.
- the present invention solves these problems, and an object of the present invention is to perform electrically stable bonding by mechanical pressure welding between metals.
- a method of manufacturing a joined body according to the present invention after a solution containing an oxide film removing agent is disposed on a joined portion forming region of a first joined member made of metal, A second member to be joined made of metal is placed on the member to be joined, and a load is applied to the joint formation region of the first member to be joined, whereby the first member to be joined and the second member to be joined Are joined to produce a joined body.
- the joined body according to the present invention is characterized in that a corrosion prevention film is formed on the joining portion of the first and second members to be joined made of metal.
- electrically stable bonding can be performed by mechanical pressure welding between metals.
- FIG. 1 is a flow chart showing a metal-to-metal bonding method according to an embodiment of the present invention.
- FIG. 2A to FIG. 2C are sectional views in order of process showing the method of bonding between metals according to the embodiment of the present invention.
- FIG. 3 is a plan view of FIG. 2 (c).
- FIGS. 4 (a) to 4 (c) are views showing scanning electron micrographs of cross sections of a joined body by the method of bonding between metals according to an embodiment of the present invention.
- 5 (a) to 5 (c) are sectional views in order of process showing the method of bonding between metals according to a second modification of the embodiment of the present invention.
- FIG. 1 is a flow chart showing a metal-to-metal bonding method according to an embodiment of the present invention.
- FIG. 2A to FIG. 2C are sectional views in order of process showing the method of bonding between metals according to the embodiment of the present invention.
- FIG. 3 is a plan view of FIG.
- FIG. 6 is a cross-sectional view showing a power module using a metal-to-metal bonding method according to an embodiment of the present invention.
- FIG. 7A is an enlarged cross-sectional view showing a region including the joint of FIG.
- FIG. 7 (b) is an enlarged plan view showing a region including a junction.
- 8 (a) to 8 (c) are cross-sectional views in the order of steps showing a method of cold pressure welding of a metal according to the conventional example.
- FIG. 1 A bonded structure and a method of manufacturing the same according to an embodiment of the present invention will be described with reference to the flowchart of FIG. 1, FIG. 2 (a) to FIG. 2 (c) and FIG.
- An oxide film is formed on the surface of each of the first metal plate 101 and the second metal plate 102 used in the present embodiment.
- first step it is an example of a solution on a joint formation region of a first metal plate (first joint member) 101 which is an example of a joint member.
- the aqueous solution 103 is dropped and disposed (step S01 in FIG. 1).
- the aqueous solution 103 contains an oxide film removing agent, an antioxidant (rust inhibitor) and a rheology control (viscosity suppressing) agent, and a liquid other than these components is water (H 2 O).
- the oxide film of the first metal plate 101 is removed to expose a new surface (Step S02 in FIG. 1).
- the bonding portion formation region is a region defined to form the bonding portion 110 between the first metal plate 101 and the second metal plate 102 shown in FIG. 2C.
- the size of the junction formation region is obtained from the junction area between metals which is previously calculated from experimental data in the past and the like.
- potassium hydroxide (KOH) having a concentration (% by mass) of 2% or less was used as the oxide film removing agent.
- the antioxidant the concentration (wt%) was used 2% diethylethanolamine ((HOCH 2 CH 2) 2 NH).
- PPG polypropylene glycol having a concentration (% by mass) of 2% or less was used as a rheology control agent.
- lithium hydroxide LiOH
- sodium hydroxide NaOH
- formic acid HCOOH
- acetic acid CH 3 COOH
- dicyclohexylamine can be used instead of diethylethanolamine as the antioxidant.
- polyethylene glycol PEG can be used in place of polypropylene glycol.
- the aqueous solution 103 may contain only the oxide film removing agent. Therefore, when the purpose is only to be electrically stable at the time of bonding, an antioxidant and a rheology control agent may be added as appropriate.
- the aqueous solution 103 contains an antioxidant in addition to the oxide film remover.
- the antioxidant adheres to the new surface exposed by the oxide film removing agent spreading to the area around the bonding portion, and the oxidation of the exposed new surface To prevent.
- the rheology control agent is used to control the viscosity of the aqueous solution 103 and to suppress the spread of the aqueous solution 103.
- an antioxidant is included in addition to the oxide film removing agent, it is necessary to add a rheology control agent to suppress the spread of the aqueous solution 103.
- the dropping amount of the aqueous solution 103 may be, for example, 0.15 ml / mm 2 or more and 1.5 ml / mm 2 or less.
- the second metal plate 102 is brought into contact with the aqueous solution 103 dropped onto the first metal plate 101 (Step S04 in FIG. 1).
- the oxide film of the second metal plate 102 is removed by the aqueous solution 103, and the new surface is exposed to the second metal plate 102 (step S05 in FIG. 1).
- at least one of the metal punches 105a and 105b is heated in advance and predetermined from the vertical direction (the direction perpendicular to the main surface) with respect to the partial area of the first metal plate 101 and the second metal plate 102.
- a preferable load as the predetermined load is 10 g / cm 2 or more and 500 g / cm 2 or less.
- the value of a preferable load is a value which changes with the shape of the metal plates 101 and 102, a dimension, a use, etc., and is not restricted to said value.
- the time for applying a load is preferably 80 seconds or less in consideration of productivity.
- the heating to the heating temperature of metal punch 105a, 105b is beforehand performed before the load application by a built-in heater etc.
- the heating temperature of the metal punches 105a and 105b is set to 80 ° C. or more and 200 ° C. or less in consideration of the influence of heat on the semiconductor elements and the like. Just do it.
- the bonding of the metal plates 101 and 102 is made fast and reliable, and the water and the oxide film removing agent in the aqueous solution 103 are evaporated (see FIG. Step S07 of 1).
- the concentrations of the oxide film removing agent and the antioxidant in the aqueous solution 103 become uniform.
- the aqueous solution 103 can be agitated, and further, bonding can be performed rapidly and reliably.
- the bonding portion 110 is formed in the region to which the load is applied by the first metal plate 101 and the second metal plate 102, The first metal plate 101 and the second metal plate 102 are joined, and a joined body composed of the first metal plate 101 and the second metal plate 102 is manufactured (Step S08 in FIG. 1).
- the metal plates 101 and 102 around the joint portion 110 have a fillet shape.
- the bonded body fills the gap between the metal plates 101 and 102 by forming a fillet shape on the metal plates 101 and 102 around the bonding portion 110, respectively. It is joined.
- a corrosion prevention film including an antioxidant as a main component around the bonding portion 110 (the metal plate is made of iron In the case of (Fe), a rustproof organic film) 103A is formed (Step S09 in FIG. 1).
- the corrosion prevention film 103A is a film formed after the water of the aqueous solution 103 and the oxide film remover evaporate.
- the corrosion preventing film 103A is formed on the side surface of the fillet shape of the metal plates 101 and 102 formed around the bonding portion 110.
- the distance between the first metal plate 101 and the second metal plate 102 during bonding is set to 0.5 ⁇ m or more and 100 ⁇ m or less.
- the reason why the distance between the first metal plate 101 and the second metal plate 102 is 0.5 ⁇ m or more is because the aqueous solution 103 necessary for oxide film removal is present between the metal plates 101 and 102. is there.
- the reason for setting the distance to 100 ⁇ m or less is that the aqueous solution 103 (after bonding) is applied to the surface of the fillet shape formed on the vertically upper metal plate (the second metal plate 102 in FIG. 2C).
- the reason is that the corrosion prevention film 103A) is poured and present.
- FIGS. 4 (a) to 4 (c) show scanning electron micrographs of the cross section of the joined body when copper (Cu) is used for the first metal plate 101 and the second metal plate 102, respectively.
- the dropping amount of the aqueous solution 103 is 0.72 ml / mm 2 .
- FIG. 4B is a partially enlarged cross-sectional view 500 times the area 111a (the central portion of the bonding portion 110) of FIG. 4A.
- FIG. 4C is a partially enlarged sectional view of 500 times the region 111b (the outer peripheral portion of the bonding portion 110) of FIG. 4A and a partially enlarged sectional view of 2000 times. Note that FIG. 4C also includes a cross section other than the bonding portion 110, that is, a cross section of a region that is not bonded.
- the composition of the first metal plate 101 and the composition of the second metal plate 102 can be other than copper (Cu) used in the present embodiment by appropriately changing the composition of the aqueous solution 103 and the bonding conditions. is there.
- Cu copper
- any one metal of copper (Cu), aluminum (Al), nickel (Ni) and iron (Fe) or an alloy containing it as a main component is used. Often used.
- these metals or alloys may be the same or different.
- it is necessary to use an aqueous solution 103 suitable for each kind of metal That is, when oxide films having different characteristics are formed on the surfaces of different metals, it is necessary to use an aqueous solution 103 suitable for both of them.
- a plate-like metal (metal plate) is used as a member for metal bonding, but the present invention does not necessarily have to be a plate-like shape as long as it can be generally joined.
- a bar bar (Bus Bar), which is a bar-like metal member used as a power supply line instead of an electric wire, has conventionally been mechanically and electrically joined by screwing. If this embodiment is used for a bus bar, for example, screwing becomes unnecessary, and a bonding process can be simplified, and the weight of an electric device using the bus bar can be reduced.
- the present invention can also be applied to so-called grain boundary bonding in which grain boundaries are disposed at bonding surfaces for bonding.
- first modification when the aqueous solution 103 does not contain an antioxidant, after the first metal plate 101 and the second metal plate 102 are joined to each other, an oxide film may be formed under specific conditions. In this manner, oxidation corrosion can be prevented by forming an oxide film instead of the above-described corrosion prevention film 103A formed on the new surface. Specifically, the bonded first metal plate 101 and the second metal plate 102 are exposed to an oxidizing atmosphere (for example, a heated oxygen (O 2 ) atmosphere), and the oxide film removing agent flowed out from the bonding portion 110 By forming an oxide film on the new surface, oxidation corrosion can be prevented instead of the above-described corrosion prevention film 103A.
- an oxidizing atmosphere for example, a heated oxygen (O 2 ) atmosphere
- the long-term reliability of the bonding body is securable without using an antioxidant as a 1st modification.
- the oxide film is formed in a separate step, it is necessary to remove the influence of the oxide film removal by the oxide film remover contained in the aqueous solution 103.
- heat treatment may be performed.
- the heating temperature may be 100 ° C., and the heating time may be approximately one hour.
- each of the surfaces of the first metal plate 101 and the second metal plate 102 on which the bonding portion 110 is to be formed encloses the region on which the bonding portion is to be formed.
- a groove (concave portion) 106 which is an example of the solution outflow prevention means, is formed.
- the formation position of the groove portion 106 is, for example, a position where the pressing surface has a diameter of 1.2 times or more and twice or less of the pressing diameter of the circular metal punches 105a and 105b.
- the formation position of the groove portion 106 is a position where the periphery of the junction formation region is about 1.25 times the area of the junction formation region.
- the formation position of the groove portion 106 is an area which spreads when the aqueous solution 103 to be dropped to remove the oxide film in the bonding portion forming region is dropped by a sufficient amount.
- positioning of the groove part 106 will not be specifically limited if it is cyclic
- the grooves 106 may be arranged in a circular shape.
- each groove portion 106 is set to one half or less of the thickness of each of the metal plates 101 and 102.
- the reason why the depth of the groove portion 106 is not more than half each of the thickness of the metal plates 101 and 102 is that the depth of the groove portion 106 is more than half the thickness of the metal plates 101 and 102 And the strength of the metal plates 101 and 102 can not be maintained.
- the groove portion 106 can be formed, for example, by etching using an acidic solution. Subsequently, the aqueous solution 103 is dropped onto the bonding portion forming region of the first metal plate 101 (step S01 in FIG. 1).
- the second metal plate 102 is placed on and brought into contact with the first metal plate 101 onto which the aqueous solution 103 has been dropped (Step S04 in FIG. 1).
- the aqueous solution 103 flows into the groove portion 106, it is difficult to spread between the contact interface of the first metal plate 101 and the second metal plate 102. Therefore, when the metal plates 101 and 102 are used as a component of a semiconductor device, it is possible to prevent the aqueous solution 103 from infiltrating the functional elements and the like constituting the semiconductor device and adversely affecting the functional elements and the like. .
- a predetermined load is applied to the partial region of the first metal plate 101 and the second metal plate 102 from the vertical direction (direction perpendicular to the main surface) using the metal punches 105a and 105b, As shown in FIG. 5C, the bonding portion 110 is formed on the first metal plate 101 and the second metal plate 102.
- the groove (recess) 106 for preventing the spread of the aqueous solution 103 is formed around the joint formation region of the metal plates 101 and 102 as an example of the solution outflow preventing means. 106 may be formed on any one of the metal plates 101 and 102. By forming the groove portion 106 only at least in the first metal plate 101 disposed vertically below, the spread of the aqueous solution 103 can be substantially prevented.
- a projection portion surrounding the periphery of the joint portion formation region and projecting from the joint surface A convex portion may be provided. Even in this case, since the aqueous solution 103 is blocked by the projection, unnecessary spread of the aqueous solution 103 can be prevented.
- a projection part can be formed, for example using a press method.
- a power module (power semiconductor device) incorporated inside an inverter control device is taken as an example, and FIG. 6, FIG. This will be described with reference to 7 (b).
- the power module includes the first lead frame 201 for holding the power element T1 on the first die pad portion, and the control element A second lead frame 202 for holding T2 on the second die pad portion, a heat sink 203 fixed to the lower surface of the first lead frame 201 with an insulating sheet 211 interposed, and an outer package 204 made of a sealing resin material. And consists of
- the exterior body 204 covers one end of the first lead frame 201 including the power element T1 and one end of the second lead frame 202 including the control element T2, and exposes the lower surface of the heat sink 203. It is formed as.
- At least a part of the first die pad portion and the second die pad portion overlap with each other in plan view in order to miniaturize the power module. Furthermore, at least a part of the power element T1 and the control element T2 are arranged to overlap each other in plan view.
- one of the plurality of leads is used as the power element relay lead 201b.
- one of the leads is used as the control element relay lead 202b.
- the end portions of the power element relay lead 201b and the control element relay lead 202b are bonded to each other according to the present invention.
- the power module is manufactured by joining with (alloy layer) 212 to form a joined body.
- the first lead frame 201 is made of, for example, a highly conductive metal such as copper (Cu).
- an insulated gate bipolar transistor (IGBT) or a metal oxide film field effect transistor (power MOSFET) can be used as the power element T1.
- IGBT insulated gate bipolar transistor
- power MOSFET metal oxide film field effect transistor
- the power element T 1 is fixed to the upper surface of the first die pad portion of the first lead frame 201 by the brazing material 206.
- a bonding pad (not shown) in the power element T1 and a plurality of leads of the first lead frame 201 are electrically connected by a wire 207 made of, for example, aluminum (Al).
- the heat sink 203 For example, copper (Cu) or aluminum (Al) can be used as the heat sink 203.
- the insulating sheet 211 provided between the heat sink 203 and the die pad portion is made of an insulating material having thermal conductivity.
- the second lead frame 202 is made of, for example, copper (Cu) or 42 alloy (Fe-42% Ni) or the like.
- the control element T2 is a semiconductor chip that controls the power element T1, and includes, for example, a drive circuit, an overcurrent prevention circuit, and the like.
- the control element T 2 is fixed to the upper surface of the second die pad portion of the second lead frame 202 by, for example, a silver (Ag) paste material 209.
- the bonding pad (not shown) of the control element T2 and the leads of the second lead frame 202 are electrically connected to each other by a wire 210 made of gold (Au).
- the first lead frame 201 is provided with the power element relay lead 201b
- the second lead frame 202 is provided with the control element relay lead 202b
- the power element relay lead 201b and control are provided.
- the element relay lead 202b is manufactured by being bonded to each other by the bonding portion 212 using the metal-metal bonding method according to the present invention.
- metal bonding is performed using an aqueous solution containing an oxide film remover, an antioxidant, a rheology control agent, and the like for bonding the relay lead 201b for power element and the relay lead 202b for control element. It is connected electrically and manufactured by doing. At this time, a rustproof organic film 203A is formed around the bonding portion 212.
- copper (Cu) is used for the first lead frame 201 and the second lead frame 202
- an alloy to which silicon (Si) or the like is added can be used.
- the bonded body, the power semiconductor device, and the manufacturing method thereof according to the present invention can electrically stably bond, for example, metals by mechanical pressure welding, and lead bars for semiconductor devices and bus bars for batteries It is effective in a wide range of fields such as
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Abstract
Description
本発明の一実施形態に係る接合体及びその製造方法について、図1のフローチャート、図2(a)~図2(c)及び図3を参照しながら説明する。なお、本実施形態で用いる第1金属板101及び第2金属板102には、それぞれ、その表面に酸化膜が形成されている。
第1変形例として、水溶液103が酸化防止剤を含まない場合に、第1金属板101と第2金属板102とを互いに接合した後に、特定の条件下で酸化膜を形成しても良い。このようにして、前述の新生面に形成される腐食防止膜103Aに代えて、酸化膜を形成することで、酸化腐食を防止できる。具体的には、接合した第1金属板101と第2金属板102とを酸化性雰囲気(例えば、加熱した酸素(O2)雰囲気)にさらして、接合部110から流出した酸化膜除去剤による新生面に酸化膜を形成することで、前述の腐食防止膜103Aに代えて酸化腐食を防止することができる。
以下、本発明の一実施形態の第2変形例について図5(a)~図5(c)を参照しながら説明する。
102 第2金属板
103 水溶液
103A 腐食防止膜
105a、105b 金属パンチ
106 溝部
110 接合部
111a、111b 領域
201 第1リードフレーム
201b パワー素子用中継リード
202 第2リードフレーム
202b 制御素子用中継リード
203A 防錆有機膜
204 外装体
206 ろう材
207 ワイヤ
209 銀ペースト材
210 ワイヤ
211 絶縁シート
212 接合部
230 接合部を含む領域
T1 パワー素子
T2 制御素子
Claims (20)
- 金属からなる第1被接合部材の接合部形成領域の上に、酸化膜除去剤を含む溶液を配置した後、前記第1被接合部材の上に金属からなる第2被接合部材を載置し、
前記第1被接合部材の接合部形成領域に、荷重を印加することにより、前記第1被接合部材と前記第2被接合部材とを互いに接合して接合体を製造する、接合体の製造方法。 - 請求項1において、
前記酸化膜除去剤は、水酸化カリウムであり、前記溶液における該水酸化カリウムの濃度は2%以下である、接合体の製造方法。 - 請求項1又は2において、
前記溶液は、酸化防止剤を含む、接合体の製造方法。 - 請求項3において、
前記酸化防止剤は、ジエチルエタノールアミンであり、前記溶液における該ジエチルエタノールアミンの濃度は2%以下である、接合体の製造方法。 - 請求項3又は4において、
前記溶液は、レオロジーコントロール剤を含む、接合体の製造方法。 - 請求項5において、
前記レオロジーコントロール剤は、ポリプロピレングリコール又はポリエチレングリコールであり、前記溶液における該ポリプロピレングリコール又はポリエチレングリコールの濃度は2%以下である、接合体の製造方法。 - 請求項1又は2において、
前記第1被接合部材と前記第2被接合部材とを接合した後に、
接合した前記第1被接合部材と前記第2被接合部材との接合部を酸化性雰囲気にさらすことにより、前記接合部の周囲に酸化膜が形成された接合体を製造する、接合体の製造方法。 - 請求項1~7のいずれか1項において、
少なくとも前記第1被接合部材に、前記接合部形成領域の周囲を囲む凹部又は凸部が形成されている、接合体の製造方法。 - 請求項1~8のいずれか1項において、
前記第1被接合部材の前記接合部形成領域に荷重を印加する際に、前記第1被接合部材及び前記第2被接合部材の少なくとも一方を加熱する、接合体の製造方法。 - 請求項1~9のいずれか1項において、
前記第1被接合部材の前記接合部形成領域に荷重を印加する際に、前記第1被接合部材及び前記第2被接合部材の少なくとも一方に超音波振動を印加する、接合体の製造方法。 - 請求項1~10のいずれか1項において、
前記第1被接合部材及び前記第2被接合部材は、銅、アルミニウム、ニッケル若しくは鉄からなる金属、又はこれらのうちの1つを主成分とする合金である、接合体の製造方法。 - 請求項1~11のいずれか1項に記載の接合体の製造方法を用いて接合体を製造した後、前記接合体を封止してパワー半導体装置を製造する、パワー半導体装置の製造方法。
- それぞれ金属からなる第1被接合部材及び第2被接合部材の接合部の周囲に腐食防止膜が形成された、接合体。
- 請求項13において、
前記腐食防止膜は、前記第1被接合部材又は前記第2被接合部材における前記接合部の周囲の新生面上に直接形成された、接合体。 - 請求項13又は14において、
前記接合部の周囲において、前記第1被接合部材及び前記第2被接合部材のそれぞれにフィレット形状が形成され、前記フィレット形状の前記第1被接合部材及び前記第2被接合部材の表面に前記腐食防止膜が形成された、接合体。 - 請求項15において、
前記腐食防止膜は、ジエチルエタノールアミンにより構成された、接合体。 - 請求項13~16のいずれか1項において、
前記接合部の周囲における前記第1被接合部材と前記第2被接合部材との間隔は、0.5μm以上且つ100μm以下である、接合体。 - 請求項13~17のいずれか1項において、
前記第1被接合部材及び前記第2被接合部材は、リードフレーム又はバスバーであり、
前記リードフレーム又はバスバーは、銅若しくは銅を主成分とする合金、又は鉄若しくは鉄を主成分とする合金である、接合体。 - 請求項13~18のいずれか1項に記載の接合体を有する、パワー半導体装置。
- 請求項19において、
少なくとも前記第1被接合部材に、前記接合部の周囲を囲む凹部又は凸部が形成されている、パワー半導体装置。
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CN201280003849.3A CN103228394B (zh) | 2011-08-25 | 2012-08-08 | 功率半导体装置 |
US13/882,436 US9013029B2 (en) | 2011-08-25 | 2012-08-08 | Joined body having an anti-corrosion film formed around a junction portion, and a semiconductor device having the same |
EP12826272.2A EP2650074A4 (en) | 2011-08-25 | 2012-08-08 | BONDED BODY, POWER SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING BONDED BODY AND POWER SEMICONDUCTOR DEVICE |
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CN103228394B (zh) | 2016-05-25 |
EP3002075A1 (en) | 2016-04-06 |
US9013029B2 (en) | 2015-04-21 |
US20130221502A1 (en) | 2013-08-29 |
JP5830704B2 (ja) | 2015-12-09 |
CN103228394A (zh) | 2013-07-31 |
EP3002075B1 (en) | 2017-02-01 |
EP2650074A1 (en) | 2013-10-16 |
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EP2650074A4 (en) | 2014-06-18 |
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