WO2013017131A3 - Integrierte nichtflüchtige speicherelemente, aufbau und verwendung - Google Patents

Integrierte nichtflüchtige speicherelemente, aufbau und verwendung Download PDF

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Publication number
WO2013017131A3
WO2013017131A3 PCT/DE2012/200047 DE2012200047W WO2013017131A3 WO 2013017131 A3 WO2013017131 A3 WO 2013017131A3 DE 2012200047 W DE2012200047 W DE 2012200047W WO 2013017131 A3 WO2013017131 A3 WO 2013017131A3
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WO
WIPO (PCT)
Prior art keywords
design
contact
volatile
piezo
integrated
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Application number
PCT/DE2012/200047
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English (en)
French (fr)
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WO2013017131A2 (de
Inventor
Heidemarie Schmidt
Yao Shuai
Shengqiang Zhou
Ilona Skorupa
Xin OU
Nan DU
Christian Mayr
Wenbo LUO
Original Assignee
Helmholtz-Zentrum Dresden - Rossendorf E.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Priority claimed from DE102011051767.7A external-priority patent/DE102011051767B4/de
Priority claimed from DE102012102326.3A external-priority patent/DE102012102326B4/de
Priority claimed from DE102012104425.2A external-priority patent/DE102012104425B4/de
Application filed by Helmholtz-Zentrum Dresden - Rossendorf E.V. filed Critical Helmholtz-Zentrum Dresden - Rossendorf E.V.
Priority to US14/131,956 priority Critical patent/US9520445B2/en
Publication of WO2013017131A2 publication Critical patent/WO2013017131A2/de
Publication of WO2013017131A3 publication Critical patent/WO2013017131A3/de

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
    • H01G7/06—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture having a dielectric selected for the variation of its permittivity with applied voltage, i.e. ferroelectric capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/82—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays the switching components having a common active material layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H10N70/235—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect between different crystalline phases, e.g. cubic and hexagonal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/253—Multistable switching devices, e.g. memristors having three or more electrodes, e.g. transistor-like devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8836—Complex metal oxides, e.g. perovskites, spinels
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
    • G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
    • G06N3/065—Analogue means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)

Abstract

Beschrieben werden die Herstellung und der Aufbau eines integrierten Speicherbauelementes, umfassend mindestens einen Oberflächenkontakt (S) und einen Gegenkontakt (O), wovon mindestens ein Kontakt gleichrichtend ausgebildet ist und eine ferrroelektrische oder piezoelektrische Schicht (11) als leitfähigen Kanal zwischen den Kontakten. Weiterhin wird der Aufbau des Speicherbauelementes mit einem zusätzlichen Drain-Anschluss und einem zusätzlichen Source-Anschluss zur nichtflüchtigen Steuerung der Leitfähigkeit zwischen dem Source- und Drain-Anschluss über den gleichrichtenden Bottom-Kontakt oder Top-Kontakt beschrieben. Das Prinzip und der Aufbau wird anschließend auf nichtflüchtige Analogspeicher erweitert, wobei die Leitfähigkeit der piezo- oder ferroelektrischen Schicht zwischen den Kontakten und/oder unter dem Oberflächenkontakt und/oder unter dem zugehörigen Gegenkontakt modifiziert ist, so dass eine an gegenüberliegenden Kontakten von außen angelegte Spannung nicht gleichmäßig in der piezo- oder ferroelektrischen Schicht abfällt und das elektrische Feld lokal groß/klein ist und ein großes elektrisches Feld eine Phasenumwandlung der piezo- oder ferroelektrischen Schicht induzieren kann. Weiterhin wird die Integration und Verwendung des nichtflüchtigen Analogspeichers in einer Arraystruktur für neuromorphe Anwendungen und als Kalibrierelement mit darunterliegender CMOS-Analogschaltung beschrieben. Das Prinzip des Aufbaus des erfindungsgemäßen Speicherbauelements ist weiterhin als integrierbare Elektrode mit nichtflüchtig positionierbarer, statisch geladener Grenzschicht erweiterbar. Dazu wird die Verwendung der integrierbaren Elektrode in Photobauelementen, Teilchendetektoren, in kapazitiven Energiespeichern und in Logikbauelementen beschrieben.
PCT/DE2012/200047 2011-07-12 2012-07-12 Integrierte nichtflüchtige speicherelemente, aufbau und verwendung WO2013017131A2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US14/131,956 US9520445B2 (en) 2011-07-12 2012-07-12 Integrated non-volatile memory elements, design and use

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
DE102011051767.7A DE102011051767B4 (de) 2011-07-12 2011-07-12 Integriertes nichtflüchtiges Speicherbauelement mit einer ferroelektrischen Schicht
DE102011051767.7 2011-07-12
DE102012102326.3 2012-03-20
DE102012102326.3A DE102012102326B4 (de) 2012-03-20 2012-03-20 Verfahren zur Herstellung eines integrierten nichtflüchtigen Analogspeichers
DE102012104425.2 2012-05-23
DE102012104425.2A DE102012104425B4 (de) 2012-05-23 2012-05-23 Integrierbare Elektrode mit nichtflüchtig positionierbarer, statisch geladener Grenzschicht, Aufbau und Verwendung

Publications (2)

Publication Number Publication Date
WO2013017131A2 WO2013017131A2 (de) 2013-02-07
WO2013017131A3 true WO2013017131A3 (de) 2013-04-25

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EP3040036B1 (de) * 2014-12-29 2017-10-11 Erbe Elektromedizin GmbH Instrumentenkopf, Applikationsinstrument mit entsprechendem Instrumentenkopf und Applikationssystem
US9526436B2 (en) * 2015-05-19 2016-12-27 Samsung Electronics Co., Ltd Amplifiers including tunable tunnel field effect transistor pseudo resistors and related devices
US10061617B2 (en) 2016-06-07 2018-08-28 International Business Machines Corporation Smart memory analog DRAM
US10176425B2 (en) * 2016-07-14 2019-01-08 University Of Dayton Analog neuromorphic circuits for dot-product operation implementing resistive memories
US10635970B2 (en) 2016-08-04 2020-04-28 International Business Machines Corporation Racetrack synapse for neuromorphic applications
US9966137B2 (en) 2016-08-17 2018-05-08 Samsung Electronics Co., Ltd. Low power analog or multi-level memory for neuromorphic computing
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