WO2013015562A3 - 초발수 필름 시트 제조방법 - Google Patents

초발수 필름 시트 제조방법 Download PDF

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Publication number
WO2013015562A3
WO2013015562A3 PCT/KR2012/005774 KR2012005774W WO2013015562A3 WO 2013015562 A3 WO2013015562 A3 WO 2013015562A3 KR 2012005774 W KR2012005774 W KR 2012005774W WO 2013015562 A3 WO2013015562 A3 WO 2013015562A3
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WO
WIPO (PCT)
Prior art keywords
film sheet
superhydrophobic
photoresist
manufacturing
silicon wafer
Prior art date
Application number
PCT/KR2012/005774
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English (en)
French (fr)
Other versions
WO2013015562A2 (ko
Inventor
이동원
고건
박승환
이사명
박종성
Original Assignee
전남대학교 산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 전남대학교 산학협력단 filed Critical 전남대학교 산학협력단
Priority to CN201280045937.XA priority Critical patent/CN103814428B/zh
Priority to EP12817539.5A priority patent/EP2736066B1/en
Publication of WO2013015562A2 publication Critical patent/WO2013015562A2/ko
Publication of WO2013015562A3 publication Critical patent/WO2013015562A3/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Laminated Bodies (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Casting Or Compression Moulding Of Plastics Or The Like (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

본 발명은 초발수 필름 시트 제조방법에 관한 것으로서, 포토레지스트의 경화시간(baking time) 및 횟수를 조절함으로써, 실제 연잎과 같은 초발수 효과를 가지는 돌기가 형성된 구조물을 생성하고, 소수성을 가지는 투명한 재질의 폴리머인 PDMS를 코팅함으로써, 초발수성 표면을 가지는 초발수 필름 시트 제조방법을 제공함에 그 목적이 있다. 이러한 목적을 달성하기 위한 본 발명은, (a) 실리콘 웨이퍼(Silicon wafer)의 표면을 클리닝하는 공정; (b) 실리콘 웨이퍼 상부에 스핀 코터(spin coater)를 이용하여 포토레지스트(photoresist: 감광제)(AZ4620)를 코팅하고, 오븐(oven)을 이용하여 소프트 베이킹(soft-baking)을 수행하는 공정; (c) 마스크 얼라이너(mask aligner)를 이용하여 상기 (b) 공정을 통해 제작된 구조물을 노광(expose)시키는 공정; (d) 포토레지스트 현상액(AZ400K)을 이용하여 현상(develop)하는 공정; (e) 상기 (d) 공정을 통해 제작된 구조물의 상부에 PDMS 몰딩(molding)을 수행하는 공정; 및 (f) 아세톤을 이용하여 포토레지스트(AZ4620)를 제거함으로써, 그 끝단에 돌기를 가지는 초발수 필름 시트를 완성하는 공정; 을 포함한다.
PCT/KR2012/005774 2011-07-22 2012-07-19 초발수 필름 시트 제조방법 WO2013015562A2 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201280045937.XA CN103814428B (zh) 2011-07-22 2012-07-19 超疏水薄膜片材的制备方法
EP12817539.5A EP2736066B1 (en) 2011-07-22 2012-07-19 Method for manufacturing a superhydrophobic film sheet

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020110072945A KR101166152B1 (ko) 2011-07-22 2011-07-22 초발수 필름 시트 제조방법
KR10-2011-0072945 2011-07-22

Publications (2)

Publication Number Publication Date
WO2013015562A2 WO2013015562A2 (ko) 2013-01-31
WO2013015562A3 true WO2013015562A3 (ko) 2013-03-21

Family

ID=46716930

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/005774 WO2013015562A2 (ko) 2011-07-22 2012-07-19 초발수 필름 시트 제조방법

Country Status (4)

Country Link
EP (1) EP2736066B1 (ko)
KR (1) KR101166152B1 (ko)
CN (1) CN103814428B (ko)
WO (1) WO2013015562A2 (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI566941B (zh) * 2015-06-12 2017-01-21 國立清華大學 導流超疏水結構及其製作方法
CN108394858A (zh) * 2018-02-27 2018-08-14 合肥工业大学 一种pdms柔性超疏水薄膜的制作方法
CN113302047B (zh) 2019-02-28 2023-05-23 韩国利迩乐公司 汽车后视镜用疏水薄膜及其成型装置
CN112495734B (zh) * 2020-11-05 2023-01-17 江苏中新瑞光学材料有限公司 一种疏水材料的生产工艺

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005262522A (ja) * 2004-03-17 2005-09-29 Pentax Corp ポリマーシートの製造方法
KR20100008579A (ko) * 2008-07-16 2010-01-26 한국과학기술원 초소수성 및 초발수성 표면을 갖는 패턴 및 그 형성방법
KR20100037717A (ko) * 2008-10-02 2010-04-12 연세대학교 산학협력단 플라즈마 촉진 폴리머 트랜스퍼 프린팅을 이용한 폴리(3-헥실 티오펜)(ｐ３ｈｔ) 박막의 마이크로패터닝 방법 및 상기 ｐ３ｈｔ 마이크로패턴화된 박막을 활성층으로 포함하는 유기 박막 트랜지스터의 제조방법

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KR20100008579A (ko) * 2008-07-16 2010-01-26 한국과학기술원 초소수성 및 초발수성 표면을 갖는 패턴 및 그 형성방법
KR20100037717A (ko) * 2008-10-02 2010-04-12 연세대학교 산학협력단 플라즈마 촉진 폴리머 트랜스퍼 프린팅을 이용한 폴리(3-헥실 티오펜)(ｐ３ｈｔ) 박막의 마이크로패터닝 방법 및 상기 ｐ３ｈｔ 마이크로패턴화된 박막을 활성층으로 포함하는 유기 박막 트랜지스터의 제조방법

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Also Published As

Publication number Publication date
EP2736066A4 (en) 2015-03-18
EP2736066A2 (en) 2014-05-28
CN103814428A (zh) 2014-05-21
KR101166152B1 (ko) 2012-07-18
WO2013015562A2 (ko) 2013-01-31
EP2736066B1 (en) 2018-08-15
CN103814428B (zh) 2016-05-11

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