WO2010062100A3 - 디지털 3차원 리소그래피 방법 - Google Patents
디지털 3차원 리소그래피 방법 Download PDFInfo
- Publication number
- WO2010062100A3 WO2010062100A3 PCT/KR2009/006956 KR2009006956W WO2010062100A3 WO 2010062100 A3 WO2010062100 A3 WO 2010062100A3 KR 2009006956 W KR2009006956 W KR 2009006956W WO 2010062100 A3 WO2010062100 A3 WO 2010062100A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- digital
- lithography
- lithography method
- microstructure
- exposure quantity
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70416—2.5D lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70558—Dose control, i.e. achievement of a desired dose
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
본 발명은, 3차원 미세구조물을 형성하려는 목적으로 수행되는 포토리소그래피에 있어서, 감광막이 형성된 기판상에, 감광막의 특성과 3차원 미세구조물의 형상에 의거하여 결정된 3차원 노광량 프로파일을 형성하는 방법에 관한 것으로, 특히 가상 레이어링에 의해 디지털 2차원 리소그래피로 3차원 노광량 프로파일을 형성하는 디지털 3차원 리소그래피 방법에 관한 것이다.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2008-0117606 | 2008-11-25 | ||
KR20080117606A KR100989863B1 (ko) | 2008-11-25 | 2008-11-25 | 디지털 3차원 리소그래피 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2010062100A2 WO2010062100A2 (ko) | 2010-06-03 |
WO2010062100A3 true WO2010062100A3 (ko) | 2010-08-12 |
Family
ID=42226245
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2009/006956 WO2010062100A2 (ko) | 2008-11-25 | 2009-11-25 | 디지털 3차원 리소그래피 방법 |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR100989863B1 (ko) |
WO (1) | WO2010062100A2 (ko) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101654618B1 (ko) | 2014-12-30 | 2016-09-06 | 동명대학교산학협력단 | 고해상도 삼각 포인트 어레이 구조 획득 방법 및 고해상도 삼각 포인트 어레이 리소그래피 방법 |
KR101900883B1 (ko) * | 2015-08-14 | 2018-09-21 | 주식회사 에스디에이 | 디지털 마이크로미러 디바이스 제어기 및 그의 노광 이미지 출력 처리 방법 |
CN109932869B (zh) * | 2017-12-19 | 2021-05-28 | 苏州苏大维格科技集团股份有限公司 | 数字光刻方法及系统 |
CN113552772B (zh) * | 2020-04-23 | 2022-09-13 | 苏州苏大维格科技集团股份有限公司 | 变光阑数据处理方法 |
CN113515021A (zh) * | 2021-03-12 | 2021-10-19 | 苏州苏大维格科技集团股份有限公司 | 激光直写光刻机制作的三维微纳形貌结构 |
JP2023149954A (ja) * | 2022-03-31 | 2023-10-16 | デクセリアルズ株式会社 | 原盤の製造方法、転写物の製造方法、レプリカ原盤の製造方法、および原盤の製造装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002107942A (ja) * | 2000-10-04 | 2002-04-10 | Ricoh Opt Ind Co Ltd | 露光方法 |
US20060088789A1 (en) * | 2001-06-27 | 2006-04-27 | Fries David P | Maskless photolithography for using photoreactive agents |
KR100621794B1 (ko) * | 2004-06-28 | 2006-09-19 | 재단법인서울대학교산학협력재단 | 순차적 양극산화를 기반으로 하는 원자간 인력 현미경을이용한 3차원 나노전사법 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100344282B1 (ko) | 1999-10-30 | 2002-07-24 | 주식회사 신동방 | 이소플라본 아글루콘 생산성을 갖는 로도투룰라 글루티니스를 이용한 이소플라본 아글루콘의 제조방법 |
WO2005054119A2 (en) | 2003-12-01 | 2005-06-16 | The Board Of Trustees Of The University Of Illinois | Methods and devices for fabricating three-dimensional nanoscale structures |
JP2007025394A (ja) | 2005-07-19 | 2007-02-01 | Fujifilm Holdings Corp | パターン形成方法 |
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2008
- 2008-11-25 KR KR20080117606A patent/KR100989863B1/ko active IP Right Grant
-
2009
- 2009-11-25 WO PCT/KR2009/006956 patent/WO2010062100A2/ko active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002107942A (ja) * | 2000-10-04 | 2002-04-10 | Ricoh Opt Ind Co Ltd | 露光方法 |
US20060088789A1 (en) * | 2001-06-27 | 2006-04-27 | Fries David P | Maskless photolithography for using photoreactive agents |
KR100621794B1 (ko) * | 2004-06-28 | 2006-09-19 | 재단법인서울대학교산학협력재단 | 순차적 양극산화를 기반으로 하는 원자간 인력 현미경을이용한 3차원 나노전사법 |
Also Published As
Publication number | Publication date |
---|---|
KR20100058998A (ko) | 2010-06-04 |
WO2010062100A2 (ko) | 2010-06-03 |
KR100989863B1 (ko) | 2010-10-29 |
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