WO2010062100A3 - 디지털 3차원 리소그래피 방법 - Google Patents

디지털 3차원 리소그래피 방법 Download PDF

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Publication number
WO2010062100A3
WO2010062100A3 PCT/KR2009/006956 KR2009006956W WO2010062100A3 WO 2010062100 A3 WO2010062100 A3 WO 2010062100A3 KR 2009006956 W KR2009006956 W KR 2009006956W WO 2010062100 A3 WO2010062100 A3 WO 2010062100A3
Authority
WO
WIPO (PCT)
Prior art keywords
digital
lithography
lithography method
microstructure
exposure quantity
Prior art date
Application number
PCT/KR2009/006956
Other languages
English (en)
French (fr)
Other versions
WO2010062100A2 (ko
Inventor
서만승
김혜령
Original Assignee
(주)이오테크닉스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by (주)이오테크닉스 filed Critical (주)이오테크닉스
Publication of WO2010062100A2 publication Critical patent/WO2010062100A2/ko
Publication of WO2010062100A3 publication Critical patent/WO2010062100A3/ko

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70416—2.5D lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

본 발명은, 3차원 미세구조물을 형성하려는 목적으로 수행되는 포토리소그래피에 있어서, 감광막이 형성된 기판상에, 감광막의 특성과 3차원 미세구조물의 형상에 의거하여 결정된 3차원 노광량 프로파일을 형성하는 방법에 관한 것으로, 특히 가상 레이어링에 의해 디지털 2차원 리소그래피로 3차원 노광량 프로파일을 형성하는 디지털 3차원 리소그래피 방법에 관한 것이다.
PCT/KR2009/006956 2008-11-25 2009-11-25 디지털 3차원 리소그래피 방법 WO2010062100A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2008-0117606 2008-11-25
KR1020080117606A KR100989863B1 (ko) 2008-11-25 2008-11-25 디지털 3차원 리소그래피 방법

Publications (2)

Publication Number Publication Date
WO2010062100A2 WO2010062100A2 (ko) 2010-06-03
WO2010062100A3 true WO2010062100A3 (ko) 2010-08-12

Family

ID=42226245

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/006956 WO2010062100A2 (ko) 2008-11-25 2009-11-25 디지털 3차원 리소그래피 방법

Country Status (2)

Country Link
KR (1) KR100989863B1 (ko)
WO (1) WO2010062100A2 (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101654618B1 (ko) 2014-12-30 2016-09-06 동명대학교산학협력단 고해상도 삼각 포인트 어레이 구조 획득 방법 및 고해상도 삼각 포인트 어레이 리소그래피 방법
KR101900883B1 (ko) * 2015-08-14 2018-09-21 주식회사 에스디에이 디지털 마이크로미러 디바이스 제어기 및 그의 노광 이미지 출력 처리 방법
CN109932869B (zh) * 2017-12-19 2021-05-28 苏州苏大维格科技集团股份有限公司 数字光刻方法及系统
CN113552772B (zh) * 2020-04-23 2022-09-13 苏州苏大维格科技集团股份有限公司 变光阑数据处理方法
CN113515021A (zh) * 2021-03-12 2021-10-19 苏州苏大维格科技集团股份有限公司 激光直写光刻机制作的三维微纳形貌结构
JP2023149954A (ja) * 2022-03-31 2023-10-16 デクセリアルズ株式会社 原盤の製造方法、転写物の製造方法、レプリカ原盤の製造方法、および原盤の製造装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002107942A (ja) * 2000-10-04 2002-04-10 Ricoh Opt Ind Co Ltd 露光方法
US20060088789A1 (en) * 2001-06-27 2006-04-27 Fries David P Maskless photolithography for using photoreactive agents
KR100621794B1 (ko) * 2004-06-28 2006-09-19 재단법인서울대학교산학협력재단 순차적 양극산화를 기반으로 하는 원자간 인력 현미경을이용한 3차원 나노전사법

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100344282B1 (ko) 1999-10-30 2002-07-24 주식회사 신동방 이소플라본 아글루콘 생산성을 갖는 로도투룰라 글루티니스를 이용한 이소플라본 아글루콘의 제조방법
KR100845565B1 (ko) 2003-12-01 2008-07-10 더 보드 오브 트러스티즈 오브 더 유니버시티 오브 일리노이 나노스케일 3차원 구조물의 제조방법 및 장치
JP2007025394A (ja) 2005-07-19 2007-02-01 Fujifilm Holdings Corp パターン形成方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002107942A (ja) * 2000-10-04 2002-04-10 Ricoh Opt Ind Co Ltd 露光方法
US20060088789A1 (en) * 2001-06-27 2006-04-27 Fries David P Maskless photolithography for using photoreactive agents
KR100621794B1 (ko) * 2004-06-28 2006-09-19 재단법인서울대학교산학협력재단 순차적 양극산화를 기반으로 하는 원자간 인력 현미경을이용한 3차원 나노전사법

Also Published As

Publication number Publication date
KR20100058998A (ko) 2010-06-04
WO2010062100A2 (ko) 2010-06-03
KR100989863B1 (ko) 2010-10-29

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