WO2012157241A1 - 電極箔とその製造方法、およびコンデンサ - Google Patents
電極箔とその製造方法、およびコンデンサ Download PDFInfo
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- WO2012157241A1 WO2012157241A1 PCT/JP2012/003123 JP2012003123W WO2012157241A1 WO 2012157241 A1 WO2012157241 A1 WO 2012157241A1 JP 2012003123 W JP2012003123 W JP 2012003123W WO 2012157241 A1 WO2012157241 A1 WO 2012157241A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0029—Processes of manufacture
- H01G9/0032—Processes of manufacture formation of the dielectric layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
- H01G9/045—Electrodes or formation of dielectric layers thereon characterised by the material based on aluminium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/07—Dielectric layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/15—Solid electrolytic capacitors
- H01G9/151—Solid electrolytic capacitors with wound foil electrodes
Definitions
- the present invention relates to an electrode foil, a manufacturing method thereof, and a capacitor.
- Capacitors such as solid electrolytic capacitors and aluminum electrolytic capacitors are used in personal computers and televisions.
- a solid electrolytic capacitor having a low equivalent series resistance (ESR) is used as a peripheral device of a CPU of a personal computer.
- Aluminum electrolytic capacitors are used for backlights of liquid crystal televisions. These capacitors are strongly desired to be small and large.
- An aluminum electrolytic capacitor has a capacitor element in which an anode foil having a dielectric film formed on its surface and a cathode foil having a dielectric film formed on its surface are wound through a separator.
- Aluminum foil is used as the anode foil.
- aluminum oxide as a dielectric film is formed.
- titanium oxide Since aluminum oxide has a low dielectric constant and low capacity, it has been studied to form a titanium nitride oxide having a high dielectric constant as a dielectric film instead of aluminum oxide.
- Patent Documents 1 and 2 are known as the above prior art documents.
- JP 2004-265951 A Japanese Patent Laid-Open No. 5-009790
- the electrode foil of the present invention includes a base material made of a metal material, a first layer made of a metal oxide formed on the base material, and TiNxOy (x> y> 0) formed on the first layer. And a third layer made of TiNxOy (0 ⁇ x ⁇ y) formed on the second layer.
- FIG. 1 is a partially cutaway perspective view of a capacitor according to an embodiment of the present invention.
- FIG. 2 is a cross-sectional view of an anode foil that is an electrode foil in an embodiment of the present invention.
- FIG. 3 is a schematic cross-sectional view of the anode foil in the embodiment of the present invention.
- FIG. 4 is a diagram showing the relationship between the depth (converted value) from the surface of the anode foil and the atomic concentration in the embodiment of the present invention.
- FIG. 5 is a view showing an SEM photograph of the anode foil before chemical conversion in the embodiment of the present invention.
- FIG. 6 is a view showing an SEM photograph of the anode foil after chemical conversion in the embodiment of the present invention.
- FIG. 5 is a view showing an SEM photograph of the anode foil before chemical conversion in the embodiment of the present invention.
- FIG. 7 is a schematic cross-sectional view of the anode foil of Comparative Example 1.
- FIG. 8 is a diagram showing the relationship between the depth (converted value) from the surface of the anode foil of Comparative Example 1 and the atomic concentration.
- FIG. 9 is a schematic cross-sectional view of the anode foil of Comparative Example 2.
- FIG. 10 is a view showing an SEM photograph of the anode foil before chemical conversion of Comparative Example 2.
- FIG. 11 is a diagram showing the relationship between the depth (converted value) from the surface of the anode foil of Comparative Example 2 and the atomic concentration.
- FIG. 12 is a schematic cross-sectional view of the anode foil of Comparative Example 3.
- FIG. 13 is a view showing an SEM photograph of the anode foil of Comparative Example 3 before chemical conversion.
- FIG. 14 is a diagram showing the relationship between the depth (converted value) from the surface of the anode foil of Comparative Example 3 and the atomic concentration.
- FIG. 15 is a schematic cross-sectional view of the anode foil of Comparative Example 4.
- FIG. 16 is a view showing an SEM photograph of the anode foil before chemical conversion of Comparative Example 4.
- FIG. 17 is a diagram showing the relationship between the depth (converted value) from the surface of the anode foil in Comparative Example 4 and the atomic concentration.
- FIG. 18A is a top view of another anode foil in the embodiment of the present invention.
- 18B is a cross-sectional view taken along the line 18B-18B of FIG. 18A.
- FIG. 19 is a perspective view of another capacitor according to the embodiment of the present invention.
- the dielectric constant of the oxide of titanium nitride used for the dielectric film of the conventional capacitor is higher than that of aluminum oxide.
- the oxide of titanium nitride is easy to crystallize and has a low withstand voltage, and therefore has a large leakage current when used in a capacitor.
- a capacitor having a large capacity and a small leakage current will be described.
- Example 1 Hereinafter, in this embodiment, a wound aluminum electrolytic capacitor will be described as an example, but the electrode foil of this embodiment may be used for other capacitors.
- FIG. 1 is a partially cutaway perspective view of a capacitor according to an embodiment of the present invention.
- the capacitor 1 has a capacitor element 5 in which an electrode foil as an anode part (hereinafter referred to as anode foil 2) and an electrode foil as a cathode part (hereinafter referred to as cathode foil 3) are wound through a separator 4. And a cathode material (not shown) impregnated in the capacitor element 5. Further, the capacitor 1 accommodates the capacitor element 5 so that the anode terminal 6 connected to the anode foil 2, the cathode terminal 7 connected to the cathode foil 3, and the anode terminal 6 and a part of the cathode terminal 7 are exposed to the outside.
- anode foil 2 an electrode foil as an anode part
- cathode foil 3 an electrode foil as a cathode part
- the case 8 and the sealing member 9 that seals the case 8 are included.
- the cathode material a solid electrolyte made of an electrolytic solution or a conductive polymer is used. Or you may use the cathode material which used electrolyte solution and the solid electrolyte together.
- FIG. 2 is a cross-sectional view of the anode foil in the embodiment of the present invention.
- the anode foil 2 has a base material 10 and a dielectric film 11 on the surface of the base material 10.
- Aluminum is used as the substrate 10.
- the surface of the substrate 10 may be roughened by etching.
- the aluminum particle may be laminated
- a metal such as silicon, titanium, nickel, or copper may be used in addition to aluminum.
- FIG. 3 is a schematic cross-sectional view of the anode foil in the embodiment of the present invention.
- the surface is flattened, but in fact, it is often roughened as shown in FIG.
- the anode foil 2 having a flat surface may be used for a capacitor having a small capacity or a small capacitor.
- the dielectric film 11 includes a first layer 12 made of aluminum oxide formed on a base material 10 made of aluminum, and TiN x O y (x>y> 0) formed on the first layer 12. It is a laminate having the second layer 13 and a third layer 14 made of TiN x O y (0 ⁇ x ⁇ y) formed on the second layer 13.
- the first layer 12 is a metal oxide such as silicon oxide, titanium oxide, nickel oxide, or copper oxide.
- FIG. 4 shows the relationship between the depth (distance) converted value (nm) from the surface of the anode foil 2 and the atomic concentration (atm%) obtained from the X-ray photoelectron spectroscopy (XPS) analysis result.
- the depth conversion value from the surface of the anode foil 2 is calculated by the following method. Using a base material on which a silicon dioxide film having a predetermined thickness is formed as a reference, the atomic concentration is measured by XPS analysis while performing argon sputtering. Then, the relationship between the analysis time and the thickness is derived from the time when the silicon atomic concentration suddenly decreases and becomes almost zero and the actual thickness of the silicon dioxide film.
- the depth conversion value from the surface of the anode foil 2 is calculated from the atomic concentration analysis time of the anode foil 2 of the present embodiment.
- the depth from the surface of the anode foil 2 indicates this depth converted value
- the film thickness is a value calculated from this converted value.
- the composition of this portion is represented by TiN x O y (0 ⁇ x ⁇ y), and indicates the third layer 14 of this example.
- the composition of this part is represented by TiN x O y (x>y> 0), and shows the second layer 13 of this example.
- the composition of this portion is mainly composed of aluminum oxide, and shows the first layer 12 of this example.
- the atomic concentration of oxygen has a maximum value in each of the first layer 12 and the third layer 14, and the atomic concentration is significantly higher than that of nitrogen atoms. That is, the first layer 12 and the third layer 14 are oxide layers.
- the second layer 13 has a nitrogen atom concentration of about 50% or more of the titanium atom concentration, and nitrogen has a higher atom concentration than oxygen and is a nitride layer.
- the thickness of the first layer 12 is about 35 nm
- the thickness of the second layer 13 is 220 nm
- the thickness of the third layer 14 is 70 nm. That is, the third layer 14 is thinner than the second layer 13, and the first layer 12 is thinner than the third layer 14.
- titanium is sputtered on the etched base material 10 in a nitrogen gas and argon gas atmosphere to form a titanium nitride layer on the surface of the base material 10.
- the thickness of the titanium nitride layer is about 50 to 500 nm.
- the surface of the titanium nitride layer can be controlled by appropriately adjusting conditions such as gas conditions (gas ratio, gas flow rate, etc.), degree of vacuum, substrate temperature, and film formation time.
- FIG. 5 is a view showing an SEM photograph of the anode foil before chemical conversion in the embodiment of the present invention.
- the magnification is 50,000 times.
- the surface of the titanium nitride layer is composed of a plurality of spindle-shaped protrusions 24 (see FIG. 18B) and has a high specific surface area. 80% or more of the protrusions 24 have a bottom surface diameter of 10 nm or more and 150 nm or less, and an average diameter of 10 nm or more and 150 nm or less.
- the titanium nitride layer is formed by sputtering, but the titanium nitride layer may be formed by another film forming process such as vacuum deposition.
- the base material 10 having the titanium nitride layer is anodized.
- the base material 10 is placed in the electrolytic solution as an anode, and the first layer 12, the second layer 13, and the third layer 14 are formed on the surface of the base material 10 by anodization.
- a 7% aqueous solution of ammonium adipate is used as the electrolytic solution for chemical conversion.
- ammonium borate, ammonium phosphate, or the like may be used.
- the formation conditions are a formation voltage of 2 V to 21 V, a holding time of 20 minutes, an electrolyte temperature of 70 ° C., and a constant current of 0.05 A / cm 2 .
- FIG. 6 is a view showing an SEM photograph of the anode foil after chemical conversion in the embodiment of the present invention.
- the magnification is 50,000 times.
- the formed anode foil 2 has a protrusion 24 formed on the surface thereof in a rounded state, that is, a dome shape.
- the size of the protrusion 24 is almost the same before and after the formation, and the bottom surface has an average diameter of 10 nm or more and 150 nm or less.
- the anode foil 2 of this example formed as described above was cut into 1 cm ⁇ 2 cm, one surface was insulated by masking under the condition of a projected area of 2 cm 2 , and the leakage current value ( ⁇ A) of the other surface And the capacitance ( ⁇ F) is measured.
- a constant voltage of 3.15 V was applied in an aqueous solution of ammonium adipate at 30 ° C., and the leakage current value after 3 minutes was measured.
- the capacity is a value measured at a frequency of 120 Hz with an LCR meter in a 15% aqueous solution of ammonium adipate kept at room temperature.
- FIG. 7 is a schematic cross-sectional view of the anode foil of Comparative Example 1.
- the anode foil 102 includes a base material 10 made of aluminum and an aluminum oxide layer 15 formed on the surface of the base material 10. That is, the dielectric film 111 is made of aluminum oxide.
- the anode foil 102 is formed by anodizing the etched substrate 10 without forming a titanium nitride layer.
- the base material 10 of Comparative Example 1 is not formed with the spindle-shaped protrusion 24 having a sharp tip as in Example 1.
- FIG. 8 is a graph showing the relationship between the depth (converted value) from the surface of the anode foil of Comparative Example 1 and the atomic concentration.
- the atomic concentration of oxygen is the highest from the surface of the anode foil 102 to a depth of about 85 nm, followed by the atomic concentration of aluminum.
- the depth exceeds 85 nm aluminum is the main component, and the atomic concentration of oxygen is almost zero. That is, the dielectric film 111 of Comparative Example 1 is composed of the aluminum oxide layer 15 having a thickness of about 85 nm.
- FIG. 9 is a schematic cross-sectional view of the anode foil of Comparative Example 2.
- the anode foil 202 includes a base material 10 made of aluminum, a thin natural oxide film 16 formed on the surface of the base material 10, and a titanium dioxide layer 17 formed on the natural oxide film 16.
- the natural oxide film 16 is made of aluminum oxide, but has a thickness of about several nanometers and is very thin. Therefore, the dielectric film 211 is substantially composed of the titanium dioxide layer 17.
- the anode foil 202 is formed by sputtering titanium on the etched base material 10 in the presence of argon gas to form a titanium layer, and then anodizing.
- FIG. 10 is a view showing a SEM photograph of the anode foil before chemical conversion in Comparative Example 2.
- the magnification is 50,000 times.
- Comparative Example 2 even when the titanium layer is formed, the spindle-shaped protrusion 24 having a sharp tip as in Example 1 is not formed, and the scale-like unevenness shown in FIG. 10 is formed. Therefore, the protrusions 24 as in Example 1 are not formed on the surface of the titanium dioxide layer 17 after chemical conversion.
- FIG. 11 is a graph showing the relationship between the depth (converted value) from the surface of the anode foil of Comparative Example 2 and the atomic concentration.
- the titanium dioxide layer 17 extends from the surface of the anode foil 202 to a depth of about 560 nm, the atomic concentration of oxygen is the highest, and then the atomic concentration of titanium is large. .
- the dielectric film 211 of Comparative Example 2 is composed of the titanium dioxide layer 17 having a thickness of about 560 nm.
- FIG. 12 is a schematic cross-sectional view of the anode foil of Comparative Example 3.
- the anode foil 302 includes a base material 10 made of aluminum, a thin natural oxide film 18 formed on the surface of the base material 10, a titanium oxide layer 19 formed on the natural oxide film 18, and a titanium oxide layer 19. And a titanium dioxide layer 20 formed thereon. Both the titanium oxide layer 19 and the titanium dioxide layer 20 contain slight nitrogen atoms. Since the natural oxide film 18 is very thin, the composition of the dielectric film 311 is mainly composed of a titanium oxide layer 19 and a titanium dioxide layer 20 containing slightly nitrogen atoms, and TiN x O y (0 ⁇ x ⁇ y). Can be expressed as
- the anode foil 302 is formed by sputtering titanium on the etched base material 10 in the presence of argon gas and nitrogen gas to form a titanium nitride layer, and then anodizing.
- FIG. 13 is a view showing an SEM photograph of the anode foil of Comparative Example 3 before chemical conversion. The magnification is 50,000 times.
- Comparative Example 3 even when the titanium nitride layer is formed, the weight-like projections 24 with sharp tips as in Example 1 are not formed, and scale-like irregularities as shown in FIG. 13 are formed. Therefore, the protrusions 24 as in Example 1 are not formed on the surface of the titanium dioxide layer 20 even after the formation.
- FIG. 14 is a diagram showing the relationship between the depth (converted value) from the surface of the anode foil of Comparative Example 3 and the atomic concentration.
- the titanium dioxide layer 20 extends from the surface of the anode foil 302 to a depth of about 230 nm, the atomic concentration of oxygen is the highest, and then the atomic concentration of titanium is large. . Further, it contains a trace amount of nitrogen atoms of less than 5 atm%.
- the depth from 230 nm to about 295 nm is the titanium oxide layer 19, where the atomic concentration of titanium is the highest and then the oxygen atomic concentration is increased.
- the titanium oxide layer 19 also contains a trace amount of nitrogen atoms less than 5 atm%.
- the range deeper than 295 nm is the base material 10, and aluminum is the main component.
- the dielectric film 311 of Comparative Example 3 is composed of a titanium oxide layer 19 having a thickness of about 65 nm and a titanium dioxide layer 20 having a thickness of about 230 nm, both of which slightly contain nitrogen atoms. Then, since the oxygen atom concentration gradually decreases from the surface of the anode foil 2 as it becomes deeper than 230 nm, there is no re-increase in the oxygen atom concentration as confirmed in FIG.
- FIG. 15 is a schematic cross-sectional view of the anode foil of Comparative Example 4.
- the anode foil 402 includes a base material 10 made of aluminum, an aluminum oxide layer 21 formed on the surface of the base material 10, and a titanium dioxide layer 22 formed on the aluminum oxide layer 21.
- the titanium dioxide layer 22 is mainly composed of titanium dioxide and contains a slight amount of nitrogen atoms. That is, the dielectric film 411 includes the aluminum oxide layer 21 and the titanium dioxide layer 22 represented by TiN x O y (0 ⁇ x ⁇ y).
- the anode foil 402 is formed by sputtering titanium on the etched base material 10 in the presence of argon gas and nitrogen gas to form a titanium nitride layer, and then anodizing.
- FIG. 16 is a view showing an SEM photograph of the anode foil of Comparative Example 4 before chemical conversion.
- the magnification is 50,000 times.
- the weight-like protrusions 24 are not formed even when the titanium nitride layer is formed. Therefore, the projection 24 as in Example 1 is not formed on the surface of the titanium dioxide layer 22 after the chemical conversion.
- FIG. 17 is a graph showing the relationship between the depth (converted value) from the surface of the anode foil in Comparative Example 4 and the atomic concentration.
- the titanium dioxide layer 22 extends from the surface of the anode foil 402 to a depth of about 70 nm, the atomic concentration of oxygen is the highest, and then the atomic concentration of titanium is large. . Further, it contains a trace amount of nitrogen atoms of less than 5 atm%.
- the aluminum oxide layer 21 has a depth of about 70 nm to about 120 nm and has the highest atomic concentration of oxygen and then the atomic concentration of aluminum. In the range deeper than 120 nm, aluminum is the main component.
- the dielectric film 411 of Comparative Example 4 is composed of an aluminum oxide layer 21 having a thickness of about 50 nm and a titanium dioxide layer 22 having a thickness of about 70 nm and slightly containing nitrogen atoms. Since the oxygen atom concentration gradually decreases from the surface of the anode foil 402 from the depth of about 120 nm, the oxygen atom concentration does not increase again as confirmed in FIG.
- Table 1 shows the leakage current values of Example 1 and Comparative Examples 1 to 4 at each conversion voltage.
- Table 2 shows the capacity ratios of Example 1 and Comparative Examples 1 to 4 at each conversion voltage.
- the capacitance ratio is a relative value when the capacitance ( ⁇ F) of Comparative Example 1 is 1.
- Example 1 As shown in (Table 1), the leakage current value can be suppressed to the same level as in Comparative Example 1 in which the dielectric film 111 is made of the aluminum oxide layer 15. In Example 1, as shown in (Table 2), the capacitance can be increased.
- the reason why the capacity can be increased is that the dielectric constant can be increased by the third layer 14 and the surface area is remarkably enlarged.
- the third layer 14 made of TiN x O y (0 ⁇ x ⁇ y) can increase the dielectric constant and realize a large capacity.
- the first layer 12 made of aluminum oxide has a high withstand voltage, the leakage current can be reduced.
- Example 1 the capacity of the capacitor 1 can be increased and the leakage current can be reduced.
- the leakage current can be reduced also in Comparative Examples 2 and 3, because the crystallinity of titanium is low. As the formation voltage is increased, the crystallinity increases and the leakage current increases. In Example 1, as shown in (Table 1), the leakage current can be reduced even if the formation voltage is increased.
- the third layer 14 and the first layer 12 mainly composed of oxide are thinner than the second layer 13. Therefore, the film thickness of the insulating portion is reduced, and the capacitance can be increased.
- the first layer 12 made of aluminum oxide is thinner than the third layer 14 which is an oxide of titanium nitride. That is, the capacitance can be increased by reducing the film thickness of the first layer 12 having a low dielectric constant.
- the leakage current value can be reduced by the aluminum oxide layer 21, but the protrusion 24 is not formed on the surface of the titanium dioxide layer 22, and the capacitance is increased only by increasing the dielectric constant. Is difficult.
- Example 1 the atomic concentration of oxygen has two maximum values in the depth direction of the anode foil 2. That is, the second layer 13 having a non-oxide as a main component and high conductivity is formed between the insulating first layer 12 and the third layer 14 having an oxide as a main component.
- FIG. 18A is a top view of another anode foil in the embodiment of the present invention.
- 18B is a cross-sectional view taken along the line 18B-18B of FIG. 18A.
- a plurality of protrusions 24 are formed.
- a convex portion having a diameter of 200 nm or more and 1000 nm or less is formed on the surface of the anode foil 2 (that is, the surface of the third layer 14).
- a plurality of 23 may be formed.
- the protrusion 24 may be formed on the convex part 23.
- the surface area can be further increased by forming a small weight-like projection 24 on the large convex portion 23.
- the protrusion 24 in FIG. 18B corresponds to the protrusion 24 in FIGS.
- the cathode foil 3 an electrode foil before forming the anode foil 2 of Example 1 may be used. That is, the cathode foil 3 has a base material 10 made of aluminum and a titanium nitride layer formed on the base material 10, and the surface of the titanium nitride layer is composed of a plurality of weight-like projections 24. Yes.
- the bottom surface of the protrusion 24 has an average diameter of 10 nm or more and 150 nm or less.
- the surface area of the cathode foil 3 can be increased, and the capacity can be increased.
- the manufacturing process of the anode foil 2 and the cathode foil 3 can be made common to the middle, and the production efficiency can be increased.
- FIG. 19 is a perspective view of another capacitor according to the embodiment of the present invention.
- the anode foil 2 is used for the wound electrolytic capacitor 1 in FIG. 1, it can also be used for a capacitor 25 (laminated solid electrolytic capacitor) as shown in FIG.
- the capacitor 25 is formed by stacking a plurality of capacitor elements 26, connecting the anode terminal portion 31 of each capacitor element 26 to the anode terminal 27, and connecting the cathode portion 30 to the cathode terminal 28. And the exterior body 29 has accommodated the capacitor
- the plurality of capacitor elements 26 are respectively an anode foil 2 (anode portion) having a base material 10 and a dielectric film 11, a solid electrolyte layer (not shown) formed on the dielectric film 11, and a solid electrolyte layer.
- a cathode layer (not shown).
- the solid electrolyte layer and the cathode layer constitute the cathode portion 30 of the capacitor element 26.
- a conductive polymer such as doped polythiophene or polypyrrole is used.
- the cathode layer is formed of a carbon layer and a silver paste layer.
- On the anode foil 2, a region where the cathode portion 30 is not formed constitutes the anode terminal portion 31 of the capacitor element 26.
- An insulating part 32 may be formed between the anode terminal part 31 and the cathode part 30.
- the electrode foil according to the present invention is particularly useful for capacitors that require a large capacity and a high withstand voltage characteristic.
Abstract
Description
以下、本実施例では、巻回形アルミ電解コンデンサを例に挙げ説明するが、本実施例の電極箔を他のコンデンサに用いてもよい。
図7は、比較例1の陽極箔の模式断面図である。陽極箔102は、アルミニウムからなる基材10と、基材10の表面に形成された酸化アルミニウム層15で構成されている。すなわち、誘電膜111が酸化アルミニウムで構成されている。陽極箔102は、エッチングされた基材10に窒化チタン層を形成せず、そのまま陽極酸化することにより形成される。
図9は、比較例2の陽極箔の模式断面図である。陽極箔202は、アルミニウムからなる基材10と、基材10の表面に形成された薄い自然酸化皮膜16と、自然酸化皮膜16の上に形成された二酸化チタン層17で構成されている。自然酸化皮膜16は酸化アルミニウムからなるが、厚みが数nm程度であり非常に薄いため、誘電膜211はほぼ二酸化チタン層17で構成されている。陽極箔202は、エッチングされた基材10に、アルゴンガス存在下でチタンをスパッタしてチタン層を形成し、その後陽極酸化することにより形成される。
図12は、比較例3の陽極箔の模式断面図である。陽極箔302は、アルミニウムからなる基材10と、基材10の表面に形成された薄い自然酸化皮膜18と、自然酸化皮膜18の上に形成された、酸化チタン層19と、酸化チタン層19の上に形成された二酸化チタン層20とからなる。酸化チタン層19と二酸化チタン層20は、いずれも僅かに窒素原子を含有する。自然酸化皮膜18は非常に薄いため、誘電膜311の組成は、僅かに窒素原子を含有する酸化チタン層19と二酸化チタン層20が主成分となり、TiNxOy(0<x<<y)で表すことができる。
図15は、比較例4の陽極箔の模式断面図である。陽極箔402は、アルミニウムからなる基材10と、基材10の表面に形成された酸化アルミニウム層21と、酸化アルミニウム層21の上に形成された二酸化チタン層22とで構成されている。二酸化チタン層22は、主成分が二酸化チタンであり、僅かに窒素原子を含有する。すなわち誘電膜411が酸化アルミニウム層21とTiNxOy(0<x<<y)で表される二酸化チタン層22とで構成されている。
2,102,202,302,402 陽極箔
3 陰極箔
4 セパレータ
5 コンデンサ素子
6 陽極端子
7 陰極端子
8 ケース
9 封止部材
10 基材
11,111,211,311,411 誘電膜
12 第一層
13 第二層
14 第三層
15 酸化アルミニウム層
16 自然酸化皮膜
17 二酸化チタン層
18 自然酸化皮膜
19 酸化チタン層
20 二酸化チタン層
21 酸化アルミニウム層
22 二酸化チタン層
23 凸部
24 突起物
25 コンデンサ
26 コンデンサ素子
27 陽極端子
28 陰極端子
29 外装体
30 陰極部
31 陽極端子部
32 絶縁部
Claims (18)
- 金属材料からなる基材と、
前記基材の上に形成された金属酸化物からなる第一層と、
前記第一層の上に形成されたTiNxOy(x>y>0)からなる第二層と、
前記第二層の上に形成されたTiNxOy(0<x<y)からなる第三層と、
を有する
電極箔。 - 前記第三層は、前記第二層よりも薄い、
請求項1に記載の電極箔。 - 前記第一層は、前記第三層よりも薄い、
請求項2に記載の電極箔。 - 前記第一層は、前記第三層よりも薄い、
請求項1に記載の電極箔。 - 前記金属酸化物は、酸化アルミニウムである
請求項1に記載の電極箔。 - 前記金属酸化物は、酸化シリコン、酸化チタン、酸化ニッケル、酸化銅のいずれか一つである
請求項1に記載の電極箔。 - 複数のドーム状の突起物が、前記第三層の表面に形成されており、
前記突起物の底面の直径は平均10nm以上、150nm以下である、
請求項1に記載の電極箔。 - 直径200nm以上、1000nm以下の複数の凸部が、前記第三層の表面に形成され、
前記突起物は、前記凸部の表面にも形成されている、
請求項7に記載の電極箔。 - 金属材料からなる基材に、窒化チタン層を形成するステップと、
前記窒化チタン層を有する前記基材を陽極酸化することにより、金属酸化物からなる第一層と、前記第一層の上にTiNxOy(x>y>0)からなる第二層と、前記第二層の上にTiNxOy(0<x<y)からなる第三層と、
を形成するステップと、
を有する
電極箔の製造方法。 - 前記窒化チタン層を形成するステップの後、
前記窒化チタン層の表面が、複数の錘状の突起物で構成され、
前記突起物の底面は、直径が平均10nm以上、150nm以下である、
請求項9に記載の電極箔の製造方法。 - 前記金属酸化物は、酸化アルミニウムである
請求項9に記載の電極箔の製造方法。 - 前記金属酸化物は、酸化シリコン、酸化チタン、酸化ニッケル、酸化銅のいずれか一つである
請求項9に記載の電極箔の製造方法。 - 金属材料からなる基材と、
前記基材の上に形成された金属酸化物からなる第一層と、
前記第一層の上に形成されたTiNxOy(x>y>0)からなる第二層と、
前記第二層の上に形成されたTiNxOy(0<x<y)からなる第三層と、
を有する電極箔からなる
陽極部と、
陰極部とを有する、
コンデンサ素子を有する
コンデンサ。 - 前記陰極部は、
導電性材料からなる基材と、
前記基材に形成された窒化チタン層とを有し、
複数の錘状の突起物が、前記窒化チタン層の表面に形成されており、
前記突起物の底面は、直径が平均10nm以上、150nm以下である、
請求項13に記載のコンデンサ。 - 前記金属酸化物は、酸化アルミニウムである
請求項13に記載のコンデンサ。 - 前記金属酸化物は、酸化シリコン、酸化チタン、酸化ニッケル、酸化銅のいずれか一つである
請求項13に記載のコンデンサ。 - 前記陽極部と前記陰極部とがセパレータを介して巻回されており、
前記コンデンサ素子に固体電解質が含浸している
請求項13に記載のコンデンサ。 - 前記陽極部の上に前記陰極部が形成されており、
前記陰極部は、固体電解質層と陰極層とで形成されている
請求項13に記載のコンデンサ。
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US14/111,151 US8971022B2 (en) | 2011-05-16 | 2012-05-14 | Electrode foil and method for manufacturing same, and capacitor |
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WO2016189779A1 (ja) * | 2015-05-28 | 2016-12-01 | パナソニックIpマネジメント株式会社 | 電解コンデンサ |
US10090112B2 (en) * | 2016-01-15 | 2018-10-02 | Pacesetter, Inc. | Use of etch resist masked anode frame for facilitation of laser cutting, particle and leakage current reduction |
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