WO2012140750A1 - 半導体装置の製造方法、樹脂封止装置、及び、半導体装置 - Google Patents
半導体装置の製造方法、樹脂封止装置、及び、半導体装置 Download PDFInfo
- Publication number
- WO2012140750A1 WO2012140750A1 PCT/JP2011/059172 JP2011059172W WO2012140750A1 WO 2012140750 A1 WO2012140750 A1 WO 2012140750A1 JP 2011059172 W JP2011059172 W JP 2011059172W WO 2012140750 A1 WO2012140750 A1 WO 2012140750A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor device
- film
- cavity
- glass
- manufacturing
- Prior art date
Links
- 239000011347 resin Substances 0.000 title claims abstract description 37
- 229920005989 resin Polymers 0.000 title claims abstract description 37
- 238000007789 sealing Methods 0.000 title claims abstract description 23
- 239000004065 semiconductor Substances 0.000 title claims description 127
- 238000004519 manufacturing process Methods 0.000 title claims description 42
- 238000000034 method Methods 0.000 title claims description 23
- 239000011521 glass Substances 0.000 claims abstract description 139
- 238000000465 moulding Methods 0.000 claims abstract description 66
- 230000006835 compression Effects 0.000 claims abstract description 14
- 238000007906 compression Methods 0.000 claims abstract description 14
- 239000005394 sealing glass Substances 0.000 claims description 50
- 125000006850 spacer group Chemical group 0.000 claims description 37
- 239000000463 material Substances 0.000 claims description 14
- 238000005452 bending Methods 0.000 description 28
- 230000000052 comparative effect Effects 0.000 description 10
- 238000003825 pressing Methods 0.000 description 7
- 239000006059 cover glass Substances 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 238000007493 shaping process Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
- H01L21/566—Release layers for moulds, e.g. release layers, layers against residue during moulding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3135—Double encapsulation or coating and encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- the present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for manufacturing a semiconductor device in which a sealing glass of a semiconductor device having a cavity inside the sealing glass is protected with a release film and resin-molded.
- the present invention also relates to a semiconductor device, and more particularly to a semiconductor device that has a cavity inside a seal glass and is resin-molded by protecting the seal glass with a release film.
- the present invention also relates to a resin sealing device, and more particularly to a resin sealing device for forming a resin by protecting a semiconductor device having a cavity inside a seal glass with a release film.
- the present invention also relates to a semiconductor device in which a light receiving region formed on a semiconductor chip is hermetically sealed with a seal glass and a method for manufacturing the same.
- CCD Charge Coupled Device
- CMOS Complementary Metal Oxide Semiconductor
- a so-called film mold is employed in which the sealing glass is protected by a release film and molded with resin in order to prevent the sealing glass from forming a thin burr in the resin molding process.
- the film is compressed above the spacers, while the film is not compressed above the hollow portion and presses the sealing glass, so that the sealing glass may be bent and cracked.
- a support frame 15 is conventionally disposed around the seal glass (seal glass) 14 as described in Patent Document 1, and the upper mold is used. There is a structure in which the pressing force applied to the cover glass 14 from the die 68 is received by the support frame 15 to suppress the bending of the cover glass 14.
- Patent Document 1 since it is necessary to arrange the support frame around the seal glass, it is necessary to secure a space for the support frame, which may increase the size of the semiconductor device. In addition, there is a risk that the cost of the semiconductor device may increase due to an increase in the manufacturing cost of the support frame itself and the number of steps for mounting the support frame.
- the present invention provides a semiconductor device manufacturing method in which a sealing glass of a semiconductor device having a cavity inside the sealing glass is protected by a release film and molded by resin.
- An object of the present invention is to prevent the occurrence of burrs in the seal glass and prevent the seal glass from being damaged by bending while suppressing an increase in cost.
- the release film in order to prevent seal glass cracking, is pressed only above the rib material or spacer that supports the seal glass.
- the center of the seal glass In a package in which a seal glass is directly laminated on the active surface side of the sensor chip using a rib material or a spacer to form a hollow structure, the center of the seal glass has a cavity below the structure. There is nothing to receive pressure, and it is in a state of receiving film pressure with seal glass. Therefore, the pressure from the release film may exceed the strength of the seal glass, and the seal glass may be damaged.
- a recess for film escape is provided in the upper mold above the portion where the seal glass is hollow. This prevents the film from applying pressure to the sealing glass above the cavity, and clamping and molding with a mold is performed. As a result, the place where the release film is pressed can be restricted above the rib material and the spacer that are the support structure of the seal glass. In other words, to prevent the glass from breakage by processing a recess for film escape on the mold cavity side so that the pressure of the release film is not applied to the center part of the seal glass, thereby suppressing or preventing bending stress on the seal glass. Can do. According to this configuration, the semiconductor device can be clamped with the molding die at a pressure that can prevent the generation of a thin burr without damaging the seal glass without adding a separate member such as a support frame.
- a method for manufacturing a semiconductor device in which a sealing glass (108) of a semiconductor device having a cavity (109) inside a sealing glass (108) is protected with a release film (110).
- the release film (110) is placed on the molding die (100) or a seal glass (108) above the cavity.
- the semiconductor device is resin-molded in a state where the film escapes to the film escape regions (104a; 104b; 104c).
- the film escape area corresponds to the area occupied by the cavity (109).
- the film escape area may be smaller than the area occupied by the cavity.
- flash in a sealing glass can be prevented, the area
- the release film is released to the area for escaping the film above the cavity, and bending stress is prevented from being applied to the seal glass above the cavity. Or it can be prevented.
- the semiconductor device can be clamped with a molding die with a pressure that prevents the generation of thin burrs in the sealing glass while preventing the sealing glass from being broken, and resin molding can be performed.
- an area for film escape is provided in the molding die or the seal glass, the increase in the size and cost of the semiconductor device is suppressed or prevented as compared with the case where another member such as a support frame is disposed around the seal glass. it can.
- a sealing glass (108) of a semiconductor device having a cavity (109) inside a sealing glass (108) is protected by a release film (110) and molded. And a recess for escaping the film (104a) for releasing the release film (110) when the semiconductor device is clamped by the molding die (100).
- the mold (100) is provided so as to at least partially overlap the region occupied by the cavity (109).
- the area occupied by the film escape recess (104a) corresponds to the area occupied by the cavity (109).
- the area occupied by the film escape recess may be smaller than the area occupied by the cavity.
- region which the hollow for film escape may occupy larger than the area
- the semiconductor device can be used at a pressure at which the sealing glass is not damaged and thin burrs are not generated by a method capable of suppressing or preventing the semiconductor device from becoming large. Can be clamped with a molding die and resin-molded.
- a semiconductor device has a cavity (109) inside a sealing glass (108), and the sealing glass (108) is protected by a release film (110) and is resin-molded.
- a film escape region (104b; 104c) for escaping the release film (110) is formed in the seal glass (108) with the cavity. It is characterized in that it is provided so as to at least partially overlap the area occupied by (109).
- the area occupied by the film escape area (104b; 104c) corresponds to the area occupied by the cavity (109).
- the film escape area may be smaller than the area occupied by the cavity.
- region for film escape may be larger than the area
- the semiconductor device since the film escape region is provided in the seal glass itself, the semiconductor device can be molded by a method that can suppress or prevent an increase in the size of the semiconductor device at a pressure at which the seal glass is not damaged and thin burr is not generated. It can be clamped with a mold and resin-molded.
- the depth of the area for escaping the film may be equal to or greater than a compression allowance for compressing the release film (110) in a portion other than the cavity (109) during clamping by the molding die (100). preferable.
- the film escape region can be provided as a film escape recess (104a) provided in the molding die (100).
- the film escape region can be provided as a film escape recess (104b) formed on the release glass (110) side surface of the seal glass (108). *
- the film escape area is a member having a predetermined thickness so as to surround at least a part of the area occupied by the cavity (109) on the surface of the release glass (110) of the seal glass (108). 111), and a portion (104c) surrounded by the member (111) can be used as the film escape region.
- the member having the predetermined thickness for example, a film (111) harder than the release film can be used. In this case, by providing a thin member such as a film on the existing seal glass, it is possible to form a film escape region while suppressing an increase in the size of the apparatus.
- the cavity (109) of the semiconductor device is formed, for example, by placing the sealing glass (108) on a semiconductor chip via a rib member or a spacer (107).
- the semiconductor device has an image sensor such as a CCD image sensor or a CMOS image sensor.
- the semiconductor device In the manufacturing method of the semiconductor device concerning a 2nd embodiment by the present invention, it is an expanded sectional view in the state where the semiconductor device was mounted in the molding die of the resin sealing device, and the dent for film escape on the seal glass of the semiconductor device It is a figure for demonstrating the compression shape of a release film in case there exists, and the bending state of seal glass.
- the semiconductor device In the manufacturing method of the semiconductor device according to the comparative example, the semiconductor device is an enlarged cross-sectional view in a state where it is placed on the molding die of the resin sealing device, and the compression shape of the release film when there is no depression for film escape and It is a figure for demonstrating the bending state of glass. It is a modification of 2nd Embodiment, and is an expanded sectional view of a shaping die and a semiconductor device when the part enclosed by the spacer member arrange
- a method of manufacturing a semiconductor device processes a recess for film escape in an upper mold cavity, and releases the part under a seal glass into a cavity. Prevent bending stress from being generated in the sealing glass by the pressure of the film.
- the reason for the generation of cracks in the seal glass is that a bending stress is generated in the seal glass due to the pressure generated when the film is pressed in the center of the seal glass because the space below the seal glass is hollow. Therefore, in order not to generate bending stress in the seal glass, it is necessary not to press the release film above the cavity, so the film escape recess for the release film to escape to the molding die above the cavity. Is provided.
- the release film when the hollow package (semiconductor device) is clamped via the release film, the release film is compressed on the rib material and the spacer, but the release film is not formed in the recess for the film escape. Since it escapes upward, it is possible to prevent pressure from being applied to the seal glass and to prevent bending stress from being generated. Accordingly, the semiconductor device can be clamped with the molding die and molded with resin at a pressure at which the sealing glass is not broken and thin burrs are not generated.
- FIG. 1 is a cross-sectional view of a semiconductor device manufacturing method according to an embodiment of the present invention in a state where the semiconductor device 1 is placed on a molding die 100 of a resin sealing device.
- FIG. 2 shows a state in which the molding die 100 of FIG. 1 is clamped.
- the molding die 100 includes a lower die 101 and an upper die 102, and a cavity 103 is formed on the lower surface of the upper die 102.
- a film escape recess 104 a is formed in a region corresponding to the cavity 109 inside the seal glass 108 of the semiconductor device 1.
- the film escape recess 104 a has a region corresponding to the cavity 109 in a plan view, and the release film 110 is compressed when the semiconductor device 1 is clamped by the upper mold 102 and the lower mold 103.
- the thickness is reduced, that is, the depth is greater than the size of the compression allowance (for example, a depth of about 0.3 mm to about 0.5 mm).
- the depth of the recess 104a for escaping the film may be a compression allowance as long as the pressure that the release film 110 applies to the seal glass 108 above the cavity 109 during clamping is within an allowable range (a range in which the seal glass does not break). It may be smaller than the size.
- the area of the film escape recess 104a in a plan view is preferably made to correspond to the area of the cavity 109, but is within a range in which the pressure that the release film 110 applies to the seal glass 108 above the cavity 109 during clamping can be allowed. As long as it is smaller than the area of the cavity 109, it may be smaller. In addition, as long as thin burr generation in the seal glass 108 can be prevented, the area of the film escape recess 104a in plan view may overlap with the area occupied by the rib material or the spacer 107.
- the semiconductor device 1 is a chip size package (CSP) in which a seal glass 108 is directly laminated on the active surface side of the sensor chip 106 using a rib material or a spacer 107 to form a hollow structure.
- the semiconductor device 1 includes a substrate 105 as a wiring board, a sensor chip (semiconductor chip) 106 fixed on the substrate 105, and a sensor chip 106 supported on a rib material or a spacer 107 on the sensor chip 106. And a sealing glass 108 arranged at a predetermined interval.
- the substrate 105 includes an inner conductor pad (upper surface side) and an outer conductor pad (lower surface side) that are electrically connected to each other through a through hole.
- the inner conductor pad is connected to the sensor chip 106 via a bonding wire. It is connected.
- the sensor chip 106 has an active surface including a light receiving region in which elements such as a CCD (Charge Coupled Device) image sensor and a CMOS (Complementary Metal Oxide Semiconductor) image sensor are formed, and is connected to the substrate 105 by a bonding wire.
- An input / output pad (not shown) is provided.
- the rib member or spacer 107 is a frame-shaped member having a predetermined thickness, and is fixed to the periphery of the active surface so as to surround the active surface of the sensor chip 106.
- the sealing glass 108 is fixed on the rib member or spacer 107 and hermetically seals the sensor chip 106 together with the rib member or spacer 107. With such a configuration, a cavity 109 is formed between the sensor chip 106 and the cover glass 108.
- the release film 110 is attached in the cavity 103 of the upper die 102 and the semiconductor device 1 is placed in the lower die 101 (FIG. 1), and then the molding die. 100 is clamped, and the semiconductor device 1 is clamped by the lower mold 101 and the upper mold 102 (FIG. 2).
- the release film 110 adheres to the seal glass 108 of the semiconductor device 1 to protect the seal glass 108. More specifically, during the resin molding operation, the release film 110 adheres to the seal glass 108 with a pressure that prevents the resin from entering the seal glass 108 and does not cause a thin burr on the seal glass 108.
- a resin is supplied into the cavity 103 by a transfer molding method or the like, and the periphery of the semiconductor device 100 is sealed with the resin.
- the release film 110 faces the film escape recess 104 a formed on the bottom surface of the cavity 103, and the release film 110. Is not compressed because it escapes into the film escape recess 104a. Therefore, above the cavity 109, the release film 110 does not transmit the pressing pressure from the bottom surface of the cavity 103 to the seal glass 108, and no bending stress is applied to the seal glass 108. As a result, it is possible to prevent the sealing glass 108 from being damaged by receiving a bending stress at a portion above the cavity 109. (Comparative example) FIG.
- FIG. 3 is a cross-sectional view of a semiconductor device manufacturing method according to a comparative example, illustrated for comparison with the semiconductor device manufacturing method according to the present invention, in a state where the semiconductor device is placed on a molding die of a resin sealing device.
- FIG. In the molding die 100 according to the comparative example, the depression 104 a for escaping the film is not provided in the die cavity 103.
- FIG. 4 is a cross-sectional view when the molding die shown in FIG. 3 is clamped.
- the seal glass 108 is also formed in the cavity above the cavity 109.
- the pressure is received from the bottom surface of 103 through the release film 110. For this reason, a large bending stress is applied to the seal glass 108 in the upper part of the cavity 109, and the seal glass 108 is greatly bent toward the inside of the cavity 109. If the bending stress exceeds the strength of the seal glass 108, there is a problem that the seal glass 108 is broken or broken.
- the release film 110 is sealed glass with a predetermined pressure at a portion above the rib member or the spacer 107.
- the seal glass 108 is protected by being in close contact with 108, while the release film 110 is released into the film escape recess 104 a at the portion above the cavity 109, so that the seal glass 108 is subjected to bending stress at the portion above the cavity 109. It is possible to suppress bending and prevent the seal glass 108 from being damaged.
- the semiconductor device 1 can be clamped by the molding die 100 with a pressure at which the sealing glass 108 is not damaged and thin burrs are not generated, and resin molding (resin sealing) can be performed. As a result, the yield of the semiconductor device can be improved.
- the semiconductor device 1 since the film escape recess 104a is provided in the molding die 100, the semiconductor device 1 is compared with the case where a support frame or the like is provided around the seal glass 108. Can be prevented from increasing in size and cost.
- FIG. 5 shows the bending stress applied to the seal glass 108 during clamping by the molding die 102 in the molding die according to the present embodiment (the right side of the drawing) and the molding die according to the comparative example (the left side of the drawing). It is explanatory drawing explaining these.
- the release film 110 is compressed by the force received upward from the rib member or the spacer 107.
- above the cavity 109 only the force received downward from the upper mold 102 and the release film 110 is applied to the seal glass 108, and there is no force received upward.
- the seal glass 108 may be damaged due to bending stress that the center portion of the seal glass 108 is greatly bent downward toward the inside of the cavity 109.
- the release film 110 is used for escaping the film above the cavity 109. It escapes into the recess 104 a and the sealing glass 108 is not compressed by the release film 110 above the cavity 109. Therefore, the sealing glass 108 does not receive downward bending stress above the cavity 109, and the bending of the sealing glass 108 is suppressed.
- the release film 110 is released into the film escape recess 104 a provided in the molding die 100 so that pressure by the clamp is not applied to the seal glass 108 at a location corresponding to the cavity 109. It is possible to suppress bending stress from being applied to the seal glass 108. Therefore, the semiconductor device 1 can be clamped with the molding die 100 at a pressure that does not cause the thin burrs without damaging the seal glass 108. In addition, since the molding die 100 is provided with the recesses 104a for escaping the film, it is possible to prevent the semiconductor device 1 from being enlarged and increased in cost compared to the case where another member such as a support frame is disposed around the seal glass 108. .
- the recesses 104a for escaping the film are provided in the molding die 100.
- the height of about 0.3 mm to 0.5 mm is provided between the portion corresponding to the cavity 109 of the seal glass 108 and its peripheral portion.
- a step may be provided so that the release film 110 is released to the seal glass 108 side at a portion corresponding to the cavity 109.
- the central portion (the portion corresponding to the cavity 109) of the seal glass 108 is shaved and thinned, or a film (for example, a polyimide film) harder than the release film 110 is formed around the seal glass 108. It is possible to affix. According to such a configuration, even if the release film 110 is compressed at the periphery of the seal glass 108, the release film 110 escapes toward the seal glass 108 at the center of the seal glass 108. It is possible to suppress or prevent stress from being applied.
- FIG. 6 shows an enlarged cross-sectional view of the semiconductor device manufacturing method according to the second embodiment of the present invention in a state where the semiconductor device is placed on a molding die of a resin sealing device.
- FIG. 7 is an enlarged cross-sectional view of a semiconductor device manufacturing method according to a comparative example in a state where the semiconductor device is placed on a molding die of a resin sealing device, and compression of the film when there is no depression for film escape It is a figure for demonstrating a shape and the bending state of glass.
- neither the molding die 101, 102 nor the semiconductor device 1 is provided with a film escape area such as a film escape recess, so that the release film 110 is located above the cavity 109. There is no space to escape, and the release film 110 transmits the pressing force from the upper mold 102 to the seal glass 108. Therefore, as shown in FIG. 7, the seal glass 108 receives a bending stress composed of a compressive stress on the upper surface side and a tensile stress on the lower surface side, and when this bending stress exceeds the strength of the seal glass 108, the seal glass 108 There is a problem that breaks.
- a film escape recess 104b is formed on the surface of the mold film 110 side.
- the film escape recess 104b is formed by, for example, mechanically cutting a portion corresponding to the cavity 109 on the surface of the cover glass 108 on the release film 110 side, or processing a portion corresponding to the glass cavity 109 with a chemical solution or the like. It can be formed by etching.
- the film escape recess 104b has a region corresponding to the cavity 109 in a plan view, and when the semiconductor device 1 is clamped by the upper mold 102 and the lower mold 103, the release film 110 is compressed to increase the thickness.
- the amount to be reduced that is, a depth greater than the size of the compression allowance (for example, a depth of about 0.3 mm to about 0.5 mm).
- the depth of the recess 104b for escaping the film may be smaller than the size of the compression allowance as long as the pressure applied to the seal glass 108 above the cavity 109 by the release film 110 during clamping is acceptable.
- the area of the film escape recess 104b in plan view preferably corresponds to the area of the cavity 109, but is within a range in which the pressure that the release film 110 applies to the sealing glass 108 above the cavity 109 during clamping can be allowed. As long as it is smaller than the area of the cavity 109, it may be smaller. In addition, as long as thin burr generation in the seal glass 108 can be prevented, the region of the film escape recess 104b in plan view may overlap with the region occupied by the rib member or the spacer 107.
- the release film 110 escapes into the film escape recess 104b of the seal glass 108 at the portion corresponding to the cavity 109, so that the pressing pressure from the bottom surface of the cavity 103 of the upper mold 102 is applied to the seal glass 108. It is possible to prevent bending stress from being applied to the seal glass 108 without being transmitted.
- the semiconductor device 1 is clamped by the molding die 100 (upper die 102, lower die 101) with a pressure at which the sealing glass 108 is not damaged and thin burrs are not generated, and resin molding (resin sealing) is performed. it can. As a result, the yield of the semiconductor device 1 can be improved. Furthermore, since the film escape recess 104b is provided in the seal glass 108, it is possible to suppress or prevent an increase in size and cost of the semiconductor device 1 as compared with the case where a support frame is disposed around the seal glass 108. (Modification) FIG.
- FIG. 8 shows a modified example of the second embodiment, in which the molding die 100 and the semiconductor device when the portion surrounded by the spacer member 111 arranged in the peripheral portion of the seal glass 108 is used as the film escape region 104c.
- FIG. 8 instead of forming the film escape recess 104b on the surface of the release glass 110 of the seal glass 108, a predetermined portion is provided so as to surround a portion corresponding to the cavity 109 on the surface of the release glass 110 of the seal glass 108.
- a spacer member 111 having a thickness may be disposed on the seal glass 108, and a portion surrounded by the spacer member 111 may function as the film escape region 104c.
- the film escape area 104c has an area corresponding to the cavity 109 in plan view.
- the depth of the film escape region 104c is defined by the level difference (the thickness of the spacer member 111) between the portion surrounded by the spacer member 111 and the upper surface of the spacer member 111, the depth of the film escape region 104c. Is a depth that reduces the thickness of the release film 110 when the semiconductor device 1 is clamped by the upper mold 102 and the lower mold 103, that is, a depth equal to or greater than the compression allowance (for example, about 0.1 mm). 3 mm to a depth of about 0.5 mm).
- the depth of the film escape region 104c may be smaller than the size of the compression allowance as long as the pressure applied to the seal glass 108 above the cavity 109 by the release film 110 during clamping is acceptable.
- the film escape region 104c in plan view preferably corresponds to the region of the cavity 109. However, as long as the pressure that the release film 110 applies to the seal glass 108 above the cavity 109 during clamping is within an allowable range. It may be smaller than the area 109. In addition, as long as the generation of thin burrs on the seal glass 108 can be prevented, the film escape region 104c in plan view may overlap with the region occupied by the rib material or the spacer 107.
- the spacer member 111 is preferably provided continuously on the entire circumference of the peripheral portion of the seal glass 108, but as long as the bending stress received by the seal glass 108 above the cavity 109 is within an allowable range, the peripheral portion of the seal glass 108 is provided. It does not have to be arranged in a part of
- the spacer member 111 for example, a film made of a material harder than the release film 110 (for example, a polyimide film, hereinafter referred to as a step forming film) can be used.
- a step-forming film having a height of about 0.3 mm to about 0.5 mm is attached to the periphery of the seal glass 108 with an adhesive or the like.
- the spacer member 111 is not limited to a film, and an arbitrary member having a desired thickness and hardness can be used.
- the film escape region 104c for releasing the release film 110 with the spacer member 111 such as a step forming film or the like, a part of the seal glass 108 is thinned and the film escape recess 104b is formed.
- the same effect as the case of forming can be obtained.
- the film escape region 104c is formed by adding the spacer member 111, the film escape region can be easily formed using the existing seal glass. Further, as compared with the case where the support frame is disposed around the seal glass 108, the increase in size and cost of the semiconductor device 1 can be suppressed or prevented.
- the seal glass is not damaged and thin burrs are generated. Clamping can be performed with a pressure that can be prevented, and the molding operation can be performed. As a result, it is possible to produce a good molded product free from thin burrs without damaging the glass.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
- Injection Moulding Of Plastics Or The Like (AREA)
Abstract
Description
上記課題を解決するため、本発明の一実施形態に係る半導体装置の製造方法は、上金型キャビティにフィルム逃げ用の窪みを加工して、シールガラス下が空洞となっている部分に離型フィルムの圧力でシールガラスに曲げ応力が発生しないようにする。シールガラス割れが発生する理由は、シールガラス下が空洞となっているため、シールガラス中央部にフィルム押さえ時に発生する圧力でシールガラスに曲げ応力が発生していることによる。そこで、シールガラスに曲げ応力を発生させないためには、空洞の上方で離型フィルムを押さえないことであるから、空洞部の上方において成形金型に離型フィルムが逃げるためのフィルム逃げ用の窪みを設ける。この構成では、離型フィルムを介して中空構造のパッケージ(半導体装置)をクランプすると、リブ材やスペーサの上では離型フィルムが圧縮されるが、フィルム逃げ用の窪みの部分では離型フィルムが上方に逃げるため、シールガラスに圧力がかかることを防止して曲げ応力が発生することを防止することができる。これにより、シールガラスが割れることなく薄バリが発生しない圧力で、半導体装置を成形金型でクランプして樹脂成形することができる。
(比較例)
図3は、本発明に係る半導体装置の製造方法と比較するために例示した、比較例に係る半導体装置の製造方法において、半導体装置を樹脂封止装置の成形金型に載置した状態の断面図である。比較例に係る成形金型100では、金型キャビティ103にフィルム逃げ用の窪み104aを設けない。図4は、図3に示した成形金型を型締めしたときの断面図である。この比較例に係る成形金型によれば、シールガラス108の空洞109に対応する部分において、上金型102にフィルム逃げ用の窪みがないため、シールガラス108は、空洞109の上方においてもキャビティ103の底面から離型フィルム110を介して圧力を受ける。このため、空洞109の上方の部分でシールガラス108に大きな曲げ応力が加わり、シールガラス108が空洞109内部に向かって大きく撓むことになる。この曲げ応力がシールガラス108の強度を超えると、シールガラス108が割れるなど破損する問題がある。
上記実施形態では、成形金型100にフィルム逃げ用の窪み104aを設けたが、シールガラス108の空洞109に対応する部分とその周辺部との間に0.3mmから0.5mm高さ程度の段差を設けて、空洞109に対応する部分でシールガラス108側に離型フィルム110を逃がすように構成しても良い。段差を設ける方法としては、シールガラス108の中央部(空洞109に対応する部分)を削って薄くするか、シールガラス108の周辺部に離型フィルム110よりも硬いフィルム(例えばポリイミドフィルム)等を貼付することが可能である。このような構成によれば、シールガラス108の周辺部で離型フィルム110を圧縮しても、シールガラス108の中央部では離型フィルム110がシールガラス108側に逃げるため、シールガラス108に曲げ応力がかかることを抑制ないし防止できる。
(変形例)
図8は、第2実施形態の変形例であり、シールガラス108の周辺部に配置したスペーサ部材111で囲まれた部分をフィルム逃がし用の領域104cとした場合の、成形金型100及び半導体装置1の拡大断面図である。また、シールガラス108の離型フィルム110側の面にフィルム逃げ用窪み104bを形成する代わりに、シールガラス108の離型フィルム110側の面において空洞109に対応する部分を囲むように、所定の厚みを有するスペーサ部材111をシールガラス108上に配置し、このスペーサ部材111で囲まれた部分をフィルム逃げ用領域104cとして機能させても良い。
100 成形金型
101 下金型
102 上金型
103 キャビティ
104a、104b フィルム逃げ用窪み
104c フィルム逃げ用の領域
105 サブストレート(配線板)
106 センサチップ
107 リブ材、又はスペーサ
108 シールガラス
109 ガラス下空洞
110 離型フィルム
111 スペーサ部材
Claims (20)
- シールガラス(108)の内側に空洞(109)を有する半導体装置のシールガラス(108)を離型フィルム(110)で保護して樹脂成形する半導体装置の製造方法であって、
前記半導体装置を成形金型(100)でクランプしたときに、前記空洞上方において前記離型フィルム(110)を、成形金型(100)又はシールガラス(108)に設けられたフィルム逃げ用の領域(104a;104b;104c)に逃がした状態で、前記半導体装置を樹脂成形することを特徴とする、半導体装置の製造方法。 - 請求項1に記載の半導体装置の製造方法において、
前記フィルム逃げ用の領域は、前記空洞(109)が占める領域に対応することを特徴とする、半導体装置の製造方法。 - 請求項1又は2に記載の半導体装置の製造方法において、
前記フィルム逃げ用の領域の深さは、成形金型(100)によるクランプ時に前記空洞(109)以外の部分で前記離型フィルム(110)が圧縮される圧縮代の大きさ以上であることを特徴とする、半導体装置の製造方法。 - 請求項1乃至3の何れかに半導体装置の製造方法において、
前記フィルム逃げ用の領域が、前記成形金型(100)に設けられたフィルム逃げ用の窪み(104a)であることを特徴とする、半導体装置の製造方法。 - 請求項1乃至3の何れかに記載の半導体装置の製造方法において、
前記フィルム逃げ用の領域が、前記シールガラス(108)の前記離型フィルム(110)側の面に形成されたフィルム逃げ用の窪み(104b)であることを特徴とする、半導体装置の製造方法。 - 請求項1乃至3の何れかに記載の半導体装置の製造方法において、
前記シールガラス(108)の前記離型フィルム(110)側の面において、前記空洞(109)が占める領域の少なくとも一部を囲むように所定の厚みを有する部材(111)を設け、該部材(111)に囲まれた部分(104c)が前記フィルム逃げ用の領域とされていることを特徴とする、半導体装置の製造方法。 - 請求項6に記載の半導体装置の製造方法において、
前記所定の厚みを有する部材(111)が、前記離型フィルム(110)よりも硬いフィルムであることを特徴とする、半導体装置の製造方法。 - 請求項1乃至7の何れかに記載の半導体装置の製造方法において、
前記空洞(109)は、前記シールガラス(108)がリブ材又はスペーサ(107)を介して半導体チップ(106)上に配置されることによって形成されていることを特徴とする、半導体装置の製造方法。 - 請求項1乃至8の何れかに記載の半導体装置の製造方法において、
前記半導体装置は、CCDイメージセンサやCMOSイメージセンサ等の撮像素子を有することを特徴とする、半導体装置の製造方法。 - シールガラス(108)の内側に空洞(109)を有する半導体装置のシールガラス(108)を離型フィルム(110)で保護して樹脂成形するための樹脂封止装置であって、
前記半導体装置を成形金型(100)でクランプしたときに前記離型フィルム(110)を逃がすためのフィルム逃げ用の窪み(104a)を、前記成形金型(100)に、前記空洞(109)が占める領域と少なくとも一部が重なるように設けたことを特徴とする、樹脂封止装置。 - 請求項10に記載の樹脂封止装置において、
前記フィルム逃げ用の窪み(104a)が占める領域は、前記空洞(109)が占める領域に対応することを特徴とする、樹脂封止装置。 - 請求項10又は11に記載の樹脂封止装置において、
前記フィルム逃げ用の窪み(104a)の深さは、成形金型(100)によるクランプ時に前記空洞(109)以外の部分で前記離型フィルム(110)が圧縮される圧縮代の大きさ以上であることを特徴とする、樹脂封止装置。 - シールガラス(108)の内側に空洞(109)を有し、シールガラス(108)が離型フィルム(110)により保護されて樹脂成形される半導体装置であって、
前記半導体装置を成形金型(100)でクランプしたときに前記離型フィルム(110)を逃がすためのフィルム逃げ用の領域(104b;104c)を、前記シールガラス(108)に、前記空洞(109)が占める領域と少なくとも一部が重なるように設けたことを特徴とする、半導体装置。 - 請求項13に記載の半導体装置において、
前記フィルム逃げ用の領域(104b;104c)が占める領域は、前記空洞(109)が占める領域に対応することを特徴とする、半導体装置。 - 請求項13又は14に記載の半導体装置において、
前記フィルム逃げ用の領域(104b;104c)の深さは、成形金型(100)によるクランプ時に前記空洞(109)以外の部分で前記離型フィルム(110)が圧縮される圧縮代の大きさ以上であることを特徴とする、半導体装置。 - 請求項13乃至15の何れかに記載の半導体装置において、
前記フィルム逃げ用の領域は、前記シールガラス(108)の前記離型フィルム(110)側の面に形成されたフィルム逃げ用の窪み(104b)であることを特徴とする、半導体装置。 - 請求項13乃至15の何れかに記載の半導体装置において、
前記シールガラス(108)の前記離型フィルム(110)側の面において、前記空洞(109)が占める領域の少なくとも一部を囲むように所定の厚みを有する部材(111)を設け、該部材(111)に囲まれた部分(104c)を前記フィルム逃げ用の領域としたことを特徴とする、半導体装置。 - 請求項17に記載の半導体装置において、
前記所定の厚みを有する部材(111)は、前記離型フィルム(110)よりも硬いフィルムであることを特徴とする、半導体装置。 - 請求項13乃至18の何れかに記載の半導体装置において、
前記空洞(109)は、前記シールガラス(108)がリブ材又はスペーサ(107)を介して半導体チップ(106)上に配置されることによって形成されていることを特徴とする、半導体装置。 - 請求項13乃至19の何れかに記載の半導体装置において、CCDイメージセンサやCMOSイメージセンサ等の撮像素子を有することを特徴とする、半導体装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/522,440 US20130020669A1 (en) | 2011-04-13 | 2011-04-13 | Method for manufacturing semiconductor device, resin sealing apparatus, and semiconductor device |
JP2012510826A JP5422047B2 (ja) | 2011-04-13 | 2011-04-13 | 半導体装置の製造方法、樹脂封止装置、及び、半導体装置 |
SG2012064614A SG184786A1 (en) | 2011-04-13 | 2011-04-13 | Method for manufacturing semiconductor device, resin sealing apparatus, and semiconductor device |
CN201180007160.3A CN102834915A (zh) | 2011-04-13 | 2011-04-13 | 半导体装置的制造方法、树脂密封装置以及半导体装置 |
PCT/JP2011/059172 WO2012140750A1 (ja) | 2011-04-13 | 2011-04-13 | 半導体装置の製造方法、樹脂封止装置、及び、半導体装置 |
TW101112464A TWI570859B (zh) | 2011-04-13 | 2012-04-09 | A semiconductor device manufacturing method, a resin sealing device, and a semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2011/059172 WO2012140750A1 (ja) | 2011-04-13 | 2011-04-13 | 半導体装置の製造方法、樹脂封止装置、及び、半導体装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2012140750A1 true WO2012140750A1 (ja) | 2012-10-18 |
Family
ID=47008956
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2011/059172 WO2012140750A1 (ja) | 2011-04-13 | 2011-04-13 | 半導体装置の製造方法、樹脂封止装置、及び、半導体装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20130020669A1 (ja) |
JP (1) | JP5422047B2 (ja) |
CN (1) | CN102834915A (ja) |
SG (1) | SG184786A1 (ja) |
TW (1) | TWI570859B (ja) |
WO (1) | WO2012140750A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014225619A (ja) * | 2013-05-17 | 2014-12-04 | アサヒ・エンジニアリング株式会社 | 樹脂成形装置及び半導体装置の製造方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6033116B2 (ja) * | 2013-02-22 | 2016-11-30 | 株式会社ディスコ | 積層ウェーハの加工方法および粘着シート |
JP5971270B2 (ja) * | 2014-02-27 | 2016-08-17 | トヨタ自動車株式会社 | 半導体装置の製造方法および製造装置 |
CA3081637C (en) * | 2017-11-10 | 2021-05-04 | Steen Brummerstedt Iversen | Recovery system for high pressure processing system |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010153726A (ja) * | 2008-12-26 | 2010-07-08 | Renesas Technology Corp | 半導体装置の製造方法および半導体装置 |
JP2010258137A (ja) * | 2009-04-23 | 2010-11-11 | Panasonic Corp | 高周波モジュールおよびその製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1861879A4 (en) * | 2005-03-25 | 2011-04-20 | Fujifilm Corp | SEMICONDUCTOR IMAGING ELEMENT AND MANUFACTURING METHOD THEREFOR |
US7880317B2 (en) * | 2005-11-22 | 2011-02-01 | Sony Corporation | Semiconductor device and method of manufacturing semiconductor device |
JP4693827B2 (ja) * | 2007-09-20 | 2011-06-01 | 株式会社東芝 | 半導体装置とその製造方法 |
-
2011
- 2011-04-13 CN CN201180007160.3A patent/CN102834915A/zh active Pending
- 2011-04-13 SG SG2012064614A patent/SG184786A1/en unknown
- 2011-04-13 US US13/522,440 patent/US20130020669A1/en not_active Abandoned
- 2011-04-13 WO PCT/JP2011/059172 patent/WO2012140750A1/ja active Application Filing
- 2011-04-13 JP JP2012510826A patent/JP5422047B2/ja active Active
-
2012
- 2012-04-09 TW TW101112464A patent/TWI570859B/zh active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010153726A (ja) * | 2008-12-26 | 2010-07-08 | Renesas Technology Corp | 半導体装置の製造方法および半導体装置 |
JP2010258137A (ja) * | 2009-04-23 | 2010-11-11 | Panasonic Corp | 高周波モジュールおよびその製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014225619A (ja) * | 2013-05-17 | 2014-12-04 | アサヒ・エンジニアリング株式会社 | 樹脂成形装置及び半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
TWI570859B (zh) | 2017-02-11 |
TW201241976A (en) | 2012-10-16 |
SG184786A1 (en) | 2012-11-29 |
JPWO2012140750A1 (ja) | 2014-07-28 |
JP5422047B2 (ja) | 2014-02-19 |
CN102834915A (zh) | 2012-12-19 |
US20130020669A1 (en) | 2013-01-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5777660B2 (ja) | 樹脂成形装置及び半導体装置の製造方法 | |
JP5084829B2 (ja) | 半導体素子の実装構造体の製造方法、半導体素子の実装方法、及び加圧ツール | |
KR100951284B1 (ko) | 웨이퍼 레벨 패키지 제조방법 | |
US8344487B2 (en) | Stress mitigation in packaged microchips | |
JP5746919B2 (ja) | 半導体パッケージ | |
KR100859624B1 (ko) | 반도체 장치의 제조 방법 | |
US7808086B2 (en) | Lead frame and manufacturing method thereof, and semiconductor apparatus and manufacturing method thereof | |
JP5422047B2 (ja) | 半導体装置の製造方法、樹脂封止装置、及び、半導体装置 | |
TWI431731B (zh) | 半導體裝置及其製造方法 | |
JP5685012B2 (ja) | 半導体パッケージの製造方法 | |
JP5315028B2 (ja) | 電子装置および電子装置の製造方法 | |
WO2010150365A1 (ja) | 半導体装置および半導体装置の製造方法 | |
JP2009272975A (ja) | 圧電部品の製造方法 | |
JP4219943B2 (ja) | 固体撮像装置 | |
JP3832353B2 (ja) | 半導体装置の製造方法 | |
JP2016012695A (ja) | 固体撮像装置 | |
JP2003254988A (ja) | 力学量センサおよびその製造方法 | |
JP2019212704A (ja) | 半導体装置およびその製造方法 | |
JP5867817B2 (ja) | 光学デバイスの製造方法 | |
JP2010206028A (ja) | Icパッケージの製造方法、icパッケージ、光ピックアップ、及び光無線データ通信の送受信デバイス | |
JP6194804B2 (ja) | モールドパッケージ | |
JP2015056540A (ja) | 半導体装置及びその製造方法 | |
JP3826811B2 (ja) | 半導体装置の製造方法 | |
JP2011129713A (ja) | 電子装置及びその製造方法 | |
JP5974774B2 (ja) | センサ装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 201180007160.3 Country of ref document: CN |
|
ENP | Entry into the national phase |
Ref document number: 2012510826 Country of ref document: JP Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 13522440 Country of ref document: US |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 11863513 Country of ref document: EP Kind code of ref document: A1 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 11863513 Country of ref document: EP Kind code of ref document: A1 |