WO2012132803A1 - Dispositif source de rayonnement ultraviolet extrême - Google Patents

Dispositif source de rayonnement ultraviolet extrême Download PDF

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Publication number
WO2012132803A1
WO2012132803A1 PCT/JP2012/055798 JP2012055798W WO2012132803A1 WO 2012132803 A1 WO2012132803 A1 WO 2012132803A1 JP 2012055798 W JP2012055798 W JP 2012055798W WO 2012132803 A1 WO2012132803 A1 WO 2012132803A1
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WO
WIPO (PCT)
Prior art keywords
light
euv
extreme ultraviolet
light source
source device
Prior art date
Application number
PCT/JP2012/055798
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English (en)
Japanese (ja)
Inventor
佐藤　弘人
泰伸 薮田
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ウシオ電機株式会社
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Filing date
Publication date
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Publication of WO2012132803A1 publication Critical patent/WO2012132803A1/fr

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/02—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diaphragms, collimators
    • G21K1/04—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diaphragms, collimators using variable diaphragms, shutters, choppers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • H05G2/008—X-ray radiation generated from plasma involving a beam of energy, e.g. laser or electron beam in the process of exciting the plasma

Definitions

  • the present invention relates to an extreme ultraviolet light source device that emits extreme ultraviolet light, and more specifically, it is possible to prevent the outflow of contaminants from the extreme ultraviolet light source device to an exposure machine connected through a light exit port.
  • the present invention relates to an extreme ultraviolet light source device.
  • FIG. 9 is a diagram for simply explaining the EUV light source device described in Patent Document 1.
  • the EUV light source apparatus has a chamber 1 that is a container.
  • a discharge part 1a in which a pair of disc-like discharge electrodes 2a, 2b constituting a plasma generation part are accommodated, a foil trap 5, an EUV collector mirror 6 which is a condensing optical means, and the like. And an EUV collector 1b to be accommodated.
  • Reference numeral 3 denotes a gas exhaust unit for exhausting the discharge unit 1a and the EUV condensing unit 1b to make the chamber 1 in a vacuum state.
  • 2a and 2b are disk-shaped electrodes. The electrodes 2a and 2b are separated from each other by a predetermined interval, and rotate about the rotation shafts 16c and 16d by the rotation of the rotary motors 16a and 16b, respectively.
  • 14 is a high-temperature plasma raw material that emits EUV light having a wavelength of 13.5 nm.
  • the high temperature plasma raw material 14 is heated molten metal, for example, liquid tin, and is accommodated in the container 15.
  • the electrodes 2a and 2b are arranged so that a part of the electrodes 2a and 2b is immersed in a container 15 that accommodates the high-temperature plasma raw material 14.
  • the liquid high-temperature plasma raw material 14 placed on the surfaces of the electrodes 2a and 2b is transported to the discharge space as the electrodes 2a and 2b rotate.
  • the laser beam 17 is irradiated from the laser source 17a to the high temperature plasma raw material 14 transported to the upper discharge space.
  • the high temperature plasma raw material 14 irradiated with the laser beam 17 is vaporized.
  • pulse power is applied to the electrodes 2a and 2b from the power supply means 4 to start pulse discharge between the electrodes 2a and 2b.
  • a plasma P is formed by the high temperature plasma raw material 14.
  • the EUV is emitted from the high temperature plasma P.
  • the EUV light radiated from the high temperature plasma P is collected by the EUV collector mirror 6 at a condensing point (also referred to as an intermediate condensing point) f of the condensing mirror 6, and is emitted from the EUV light exit port 7. Then, the light enters the exposure device 30 indicated by a dotted line connected via the EUV light exit 7.
  • the present invention has been made based on the above, and it is an object of the present invention to realize an apparatus capable of preventing a contaminant from flowing out from the light exit of an extreme ultraviolet light source apparatus to the exposure machine side.
  • a rotating blade (propeller) is disposed between the collector mirror and the light exit of the extreme ultraviolet light source device, and the rotation axis thereof is disposed outside the optical path of the extreme ultraviolet light. . Then, the rotating blade is rotated, and when the extreme ultraviolet light is not emitted, the rotating blade is passed between the condenser mirror and the light exit port. While the rotary blade passes in front of the light emission port, the light emission port is substantially shielded by the rotary blade.
  • the rotary blades are rotated so as to intersect the optical axis of the EUV light, the contaminants that have traveled toward the light exit port collide with the rotor blades, and the traveling direction is bent, so Outflow is suppressed.
  • the rotary blade also crosses the optical path of the extreme ultraviolet light collected by the condenser mirror. Therefore, the generation timing of the plasma that emits extreme ultraviolet light is synchronized with the rotation period of the rotating blade so that the extreme ultraviolet light does not interfere with the light exit, and no plasma is generated on the rotating blade. Sometimes it passes through the light exit before the light is incident. That is, the present invention solves the above problems as follows.
  • a container is provided with a plasma generation unit and a condensing mirror that collects extreme ultraviolet light emitted from the plasma generated in the plasma generation unit, and the container is focused by the condensing mirror.
  • the extreme ultraviolet light source device in which the extreme ultraviolet light is emitted and the light emission port connected to the second container (exposure machine) is formed, the light is emitted between the condenser mirror and the light emission port.
  • a rotating blade that rotates in a plane that intersects the optical axis of the extreme ultraviolet light is disposed on the light incident side of the light exit port, and the condensing mirror collects the rotating shaft of the rotating means that rotates the rotating blade. It is placed outside the optical path of the shining extreme ultraviolet light.
  • the extreme ultraviolet light source device is provided with a rotation control unit for controlling the rotation means, and the rotation control unit includes a period of plasma generation in the plasma generation unit, and the rotating blade. And the rotation of the rotor blades is controlled so that the rotor blades pass between the condenser mirror and the light exit port when the plasma is not generated.
  • a rotating blade that rotates in a plane intersecting the optical axis of the condenser mirror is disposed between the condenser mirror and the light exit opening and on the light incident side of the light exit opening. While the rotor blades pass in front of the light exit port, the light exit port can be substantially shielded and the outflow of contaminants can be suppressed. Further, the contaminant that has traveled toward the light exit port collides with the rotor blade, and the traveling direction thereof is bent. This can also suppress the outflow of pollutants. Further, when the plasma is not generated, the rotation of the rotor blade is controlled so that the rotor blade passes between the condensing mirror and the light exit port, so that the rotor blade does not block extreme ultraviolet light. Will not drop.
  • FIG. It is a figure which shows schematic structure of the EUV light source device of this invention. It is a conceptual diagram of the rotary blade of the Example of this invention. It is an enlarged view of a rotor blade and the vicinity of a light exit. It is a figure explaining the relationship between the timing of EUV light generation, and operation
  • FIG. It is a figure which shows schematic structure at the time of applying this invention to the EUV light source device which is not provided with a discharge electrode. It is a figure explaining an EUV light source device.
  • FIG. 1 shows an outline of the configuration of the EUV light source apparatus of the present invention.
  • the configuration of the EUV light source apparatus is the same as that shown in FIG.
  • the discharge part 1a in which a pair of disc-shaped discharge electrodes 2a, 2b and the like are accommodated, the foil trap 5 and the EUV collector mirror which is a condenser optical means. 6 and the like are provided.
  • the chamber 1 is provided with a gas exhaust unit 3 for evacuating the chamber 1.
  • the disk-shaped electrodes 2a and 2b are separated from each other by a predetermined interval, and rotate around the rotation axes 16c and 16d by the rotation of the rotation motors 16a and 16b, respectively.
  • the high-temperature plasma raw material 14 is heated molten metal, for example, liquid tin, and is accommodated in a container 15, and the electrodes 2 a and 2 b each include a container 15 in which a part of the high-temperature plasma raw material 14 accommodates the high-temperature plasma raw material 14. It is arranged to be immersed in the inside.
  • the liquid high-temperature plasma raw material 14 is transported to the discharge space as the electrodes 2a and 2b rotate, and the high-temperature plasma raw material 14 is irradiated with the laser beam 17 from the laser source 17a. To do.
  • pulse power is applied to the electrodes 2a and 2b from the power supply means 4 to start pulse discharge between the electrodes 2a and 2b.
  • a plasma P is formed by the high temperature plasma raw material 14.
  • the EUV is emitted from the high temperature plasma P.
  • the EUV light emitted from the high temperature plasma P enters the EUV collector mirror 6 through the foil trap 5 and is collected by the EUV collector mirror 6 at a condensing point (intermediate condensing point) f of the collector mirror 6.
  • the EUV collector mirror 6 is formed with a light reflecting surface 6a for reflecting EUV light having a wavelength of 13.5 nm emitted from the high temperature plasma P.
  • the EUV collector mirror 6 is composed of a plurality of light reflecting surfaces 6a arranged in a nested manner without contacting each other.
  • Each light reflecting surface 6a is formed by densely coating a metal such as Ru (ruthenium), Mo (molybdenum), Rh (rhodium) on the reflecting surface side of the base material having a smooth surface made of Ni (nickel) or the like. , It is formed so as to favorably reflect extreme ultraviolet light having an incident angle of 0 to 25 °.
  • Each light reflecting surface 6a is configured such that the condensing points f coincide.
  • a rotating blade (propeller) 8 that rotates in a plane intersecting the optical axis of the EUV light is disposed between the EUV collector mirror 6 and the EUV light exit 7 and on the light incident side of the light exit 7.
  • the rotary blade 8 is attached to a rotary shaft 9 a of a motor (rotating means) 9.
  • the motor 9 operates and the rotary shaft 9a rotates, the rotary blade 8 crosses the light incident side of the light exit 7.
  • the motor (rotating means) 9 and its rotating shaft 9a are arranged outside the optical path of the EUV light so as not to block the EUV light collected by the condensing mirror 6 and passing through the EUV light exit port 7.
  • FIG. 2 is a conceptual diagram of a rotor blade according to an embodiment of the present invention.
  • FIG. 10 (a) is a perspective view of the rotor blades
  • FIGS. 9 (b) and (c) explain the relationship between the generation of plasma and the rotational position of the rotor blades. It is a figure to do.
  • Substances that contaminate the optical elements in the exposure machine such as water and hydrocarbon (hydrocarbon), exist as gas (gas) in the chamber 1 and fly around the chamber 1 in all directions.
  • a part of the light enters the exposure device 30 from the EUV light exit 7.
  • the rotary blade 8 is arranged on the light incident side of the EUV light exit 7 and rotates to prevent contaminants from entering the exposure device 30.
  • the rotating blade 8 must not block the optical path during the emission of EUV light.
  • the plasma P that emits EUV light is formed by applying pulsed power from the power supply means 4. Therefore, EUV light is also emitted in a pulsed manner in accordance with the generation of the plasma P. For this reason, as shown in FIGS. 2B and 2C, when the plasma P is formed and EUV light is emitted, the rotating blade 8 does not block the EUV light emission port 7 (FIG. 2C).
  • the rotating blade 8 is rotated so that the rotating blade 8 closes the EUV light emission port 7 (FIG. 2B).
  • the control unit 10 of the EUV light source apparatus controls the operation of the power supply means 4 and the laser source 17a to control the formation of plasma P, that is, the generation timing (cycle) of EUV light.
  • the operation of the motor 9 by the rotation control unit 11, that is, the rotation cycle of the rotary blade 8 is changed when plasma P is formed and EUV light is emitted.
  • the rotor 8 is controlled so as not to block the EUV light exit 7.
  • the rotation control unit 11 is controlled by a synchronization control unit 10 a provided in the control unit 10.
  • the synchronization control unit 10a outputs a synchronization signal to the rotation control unit 11 in order to synchronize the cycle of plasma generation in the plasma generation unit and the rotation cycle of the rotor blades.
  • the rotation control unit 11 causes the rotary blade 8 to pass between the condenser mirror 6 and the light exit port 7 when the plasma is not generated (when EUV light is not generated).
  • EUV light when EUV light is not generated.
  • the motor 9 is controlled to rotate in synchronization with the synchronization signal, or A sensor or the like is provided to detect the emission of EUV light, and the motor is rotated in synchronization with the emission of EUV light.
  • FIG. 3 shows an enlarged view of the vicinity of the rotor blade and the light exit port.
  • FIG. 5A is a cross-sectional view of the vicinity of the light exit opening taken along a plane along the optical axis of the EUV light and the rotation axis of the motor 9, and
  • FIG. 5B is a view of the rotary blade viewed from the EUV collector mirror 6 side. It is.
  • the EUV light from the condenser mirror 6 is collected at the light exit 7 with an angle ⁇ with the optical axis.
  • FIG. 4 is a diagram for explaining the relationship between the generation timing of EUV light and the operation of the rotor blades.
  • FIGS. 4A to 4C show the rotation state of the rotor blade 8
  • FIG. 4D shows the generation timing of EUV light. Indicates.
  • the EUV light is generated only for a time t1 in the operation of one pulse, and the time t2 until the light emission of the next pulse is in a non-light emitting state.
  • the rotor blade 8 is prevented from reaching the optical path spot Ls, and during the EUV no light emission, the rotor blade 8 crosses the optical path spot Ls.
  • the rotation frequency of the rotor blade 8 is f2, the diameter of the optical path spot is r, the radius of the navigation rotor blade 8 is R, and the width of the rotor blade 8 is w (see FIG. 4A).
  • FIGS. 5 shows the positional relationship between the rotational axis center of the rotary blade 8 and the optical path spot Ls
  • FIG. 6 shows the rotational position of the rotary blade.
  • ⁇ 2 ⁇ 4 ⁇ 2 ⁇ ⁇ must be satisfied in order for the rotor blade 8 to completely cross the optical path spot Ls during no light emission.
  • ⁇ 4 is an angle at which the width w of the rotary blade 8 extends from the center of the rotary blade (axis) in the optical path spot Ls.
  • ⁇ 5 ⁇ 2 ⁇ ⁇ must be satisfied so that the rotor blade does not cross the optical path spot during light emission.
  • the minimum shaft offset value ⁇ allowed for a certain rotation frequency f2 is determined. Assuming that this minimum axis offset is ⁇ 2, the limit minimum radius R2 of the rotor blade is ⁇ 2 + r (condition 2).
  • the axis offset ⁇ must be greater than ⁇ 1 and ⁇ 2. If the axis offset ⁇ is determined, the minimum value of the rotor blade radius R is ⁇ + r as described above.
  • the relationship between the rotor blade rotation frequency f2 and the minimum rotor blade radius R is shown in FIG.
  • the EUV emission time t1 in one pulse operation was 1 ⁇ s
  • the EUV emission repetition frequency f1 was 20 kHz
  • the number N of rotating blades was 20,
  • the width w of the rotating blades was 10 mm.
  • the limit minimum radius line R1 and the limit minimum radius line R2 correspond to the minimum axis offset ⁇ 1 (condition 1) and the minimum axis offset ⁇ 2 (condition 2), respectively. What the rotor blade radius R can take is the shaded area in FIG.
  • the repetition frequency of EUV light emission is f1
  • f1 and f2 ⁇ N must have a common divisor.
  • values that f2 can take are discrete values such as 2000 Hz, 1000 Hz, 500 Hz, and 200 Hz.
  • the rotary blade 8 crosses the light exit port 7 while no light is emitted, the light exit port 7 is substantially shielded by the rotary blade 8.
  • the shielding rate is represented by ⁇ 4 / ⁇ 3, and in the present embodiment, the value is 34%.
  • the incoming contaminant collides with the rotor blade 8 and does not flow out from the light exit 7. In the vicinity of the light exit, most of the contaminants are considered to be within this speed range, and the outflow to the exposure apparatus side is considerably suppressed.
  • FIG. 8 shows an outline of a configuration in which the present invention is applied to an EUV light source apparatus that does not include a discharge electrode.
  • the EUV light source apparatus includes a chamber 1 that houses a condensing reflecting mirror 21 that is a condensing optical means.
  • the condensing reflecting mirror 21 is formed with a light reflecting surface 21a for reflecting EUV light having a wavelength of 13.5 nm emitted from high-temperature plasma and condensing the light at a condensing point f.
  • the chamber 1 is provided with a gas exhaust unit 3 for making the chamber 1 in a vacuum state.
  • the EUV light source device includes a raw material supply unit 22 that drops (drops) and supplies a liquid or solid raw material M for generating high-temperature plasma on the light reflecting surface 21 a side of the condenser reflector 21.
  • the raw material M is, for example, tin (Sn) or lithium (Li).
  • the EUV light source device includes a high-power laser device 23 that irradiates the raw material M supplied by the raw material supply means 22 with a laser beam with very high energy.
  • the raw material supply means 22 has a very high energy from the high-power laser device 23 through the laser incident window 23a to the high-temperature plasma raw material M supplied to the light reflecting surface 21a side of the condensing reflector 21. A laser beam is irradiated.
  • the raw material M becomes high-temperature plasma and emits EUV light having a wavelength of 13.5 nm.
  • the EUV light radiated from the high temperature plasma is reflected by the light reflecting surface 21a of the condensing reflecting mirror 21 and is condensed at the condensing point f.
  • the condensed EUV light exits from the EUV light exit 7 and enters the exposure device 30 connected via the EUV exit 7.
  • the rotary blade (propeller) 8 described in the above embodiment is provided between the condenser reflector 21 and the EUV light exit 7 and on the light exit 7 side.
  • the synchronization control unit 10 a of the control unit 10 generates a synchronization signal for synchronizing the dropping timing of the raw material M from the raw material supply means 22, the laser irradiation timing of the laser device 23, and the rotational speed of the rotary blade 8.
  • the rotation control unit 11 when the EUV light is emitted, the rotation control unit 11 does not emit the EUV light so that the rotating blade 8 does not block the EUV light emission port 7. At times, the rotor 8 is rotated so that the rotor 8 closes the EUV light exit 7.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Public Health (AREA)
  • Atmospheric Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Environmental & Geological Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)

Abstract

Le but de la présente invention est d'empêcher un matériau contaminé de s'échapper par l'orifice d'émission de lumière d'un dispositif source de rayonnement ultraviolet extrême (EUV) vers un dispositif d'exposition. Le rayonnement EUV émis par un plasma à haute température (P) est collecté sur un point focal (f) par un condenseur EUV (6), puis émis depuis un orifice d'émission de rayonnement EUV (7) pour irradier un dispositif d'exposition (30). Une aile rotative (propulseur) (8), qui tourne au moyen d'un moteur (9) de manière à croiser l'axe optique du rayonnement EUV, est disposée entre le condenseur (6) et l'orifice d'émission de lumière (7), et l'arbre de rotation (9a) est positionné à l'extérieur du chemin lumineux du rayonnement ultraviolet extrême. L'aile rotative (8) est commandée pour passer entre le condenseur (6) et l'orifice d'émission de lumière (7) quand le rayonnement ultraviolet extrême n'est pas émis. Dans ce cas, l'aile rotative recouvre sensiblement l'orifice d'émission de lumière (7), et le matériau contaminé se déplaçant vers l'orifice d'émission de lumière entre en collision avec l'aile rotative qui modifie sa direction et empêche ainsi la sortie du matériau contaminé.
PCT/JP2012/055798 2011-03-30 2012-03-07 Dispositif source de rayonnement ultraviolet extrême WO2012132803A1 (fr)

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Application Number Priority Date Filing Date Title
JP2011075101A JP2012209182A (ja) 2011-03-30 2011-03-30 極端紫外光光源装置
JP2011-075101 2011-03-30

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US9609731B2 (en) * 2014-07-07 2017-03-28 Media Lario Srl Systems and methods for synchronous operation of debris-mitigation devices

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08241847A (ja) * 1995-03-07 1996-09-17 Hitachi Ltd 露光装置及び露光方法
JP2000349009A (ja) * 1999-06-04 2000-12-15 Nikon Corp 露光方法及び装置
JP2003022950A (ja) * 2001-07-05 2003-01-24 Canon Inc Ｘ線光源用デブリ除去装置及び、デブリ除去装置を用いた露光装置
JP2006222198A (ja) * 2005-02-09 2006-08-24 Canon Inc 露光装置
JP2007173792A (ja) * 2005-12-02 2007-07-05 Asml Netherlands Bv 放射システムおよびリソグラフィ装置
JP2008108945A (ja) * 2006-10-26 2008-05-08 Ushio Inc 極端紫外光光源装置
JP2009049151A (ja) * 2007-08-20 2009-03-05 Osaka Univ レーザプラズマ光源

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08241847A (ja) * 1995-03-07 1996-09-17 Hitachi Ltd 露光装置及び露光方法
JP2000349009A (ja) * 1999-06-04 2000-12-15 Nikon Corp 露光方法及び装置
JP2003022950A (ja) * 2001-07-05 2003-01-24 Canon Inc Ｘ線光源用デブリ除去装置及び、デブリ除去装置を用いた露光装置
JP2006222198A (ja) * 2005-02-09 2006-08-24 Canon Inc 露光装置
JP2007173792A (ja) * 2005-12-02 2007-07-05 Asml Netherlands Bv 放射システムおよびリソグラフィ装置
JP2008108945A (ja) * 2006-10-26 2008-05-08 Ushio Inc 極端紫外光光源装置
JP2009049151A (ja) * 2007-08-20 2009-03-05 Osaka Univ レーザプラズマ光源

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