WO2012117899A1 - 変速機制御装置及び電子回路装置 - Google Patents

変速機制御装置及び電子回路装置 Download PDF

Info

Publication number
WO2012117899A1
WO2012117899A1 PCT/JP2012/054162 JP2012054162W WO2012117899A1 WO 2012117899 A1 WO2012117899 A1 WO 2012117899A1 JP 2012054162 W JP2012054162 W JP 2012054162W WO 2012117899 A1 WO2012117899 A1 WO 2012117899A1
Authority
WO
WIPO (PCT)
Prior art keywords
electronic circuit
circuit board
base
sealing resin
opening
Prior art date
Application number
PCT/JP2012/054162
Other languages
English (en)
French (fr)
Inventor
清隆 菅野
小田倉　安則
Original Assignee
日立オートモティブシステムズ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日立オートモティブシステムズ株式会社 filed Critical 日立オートモティブシステムズ株式会社
Priority to DE112012001049.3T priority Critical patent/DE112012001049B4/de
Priority to US13/985,235 priority patent/US20130329384A1/en
Publication of WO2012117899A1 publication Critical patent/WO2012117899A1/ja

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H05K1/0212—Printed circuits or mounted components having integral heating means
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16H—GEARING
    • F16H61/00—Control functions within control units of change-speed- or reversing-gearings for conveying rotary motion ; Control of exclusively fluid gearing, friction gearing, gearings with endless flexible members or other particular types of gearing
    • F16H61/0003—Arrangement or mounting of elements of the control apparatus, e.g. valve assemblies or snapfittings of valves; Arrangements of the control unit on or in the transmission gearbox
    • F16H61/0006—Electronic control units for transmission control, e.g. connectors, casings or circuit boards
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H05K1/0203—Cooling of mounted components
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/28—Applying non-metallic protective coatings
    • H05K3/284—Applying non-metallic protective coatings for encapsulating mounted components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/4901—Structure
    • H01L2224/4903—Connectors having different sizes, e.g. different diameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15151—Shape the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09009—Substrate related
    • H05K2201/09072—Hole or recess under component or special relationship between hole and component
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10166—Transistor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/13—Moulding and encapsulation; Deposition techniques; Protective layers
    • H05K2203/1305—Moulding and encapsulation
    • H05K2203/1316—Moulded encapsulation of mounted components
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0058—Laminating printed circuit boards onto other substrates, e.g. metallic substrates
    • H05K3/0061—Laminating printed circuit boards onto other substrates, e.g. metallic substrates onto a metallic substrate, e.g. a heat sink

Definitions

  • the present invention relates to a shift control device for an automobile, and is suitable, for example, for a control valve for controlling an automatic transmission and an electronic circuit device for controlling a control target component of the control valve. .
  • FIG. 11 shows an electronic circuit assembly for controlling a transmission and a drive unit of an automobile, a base for fixing the electronic circuit assembly, and lead terminals electrically connected to the electronic circuit assembly. It is the electronic circuit device 1 sealed with.
  • FIGS. 11B and 11C are partial cross-sectional views taken along lines II and II-II in FIG. 11A, respectively.
  • An electronic circuit assembly 5 including a circuit board 8 on which the circuit element 6 and the bare chip 7 are mounted is bonded and fixed to the base 2 having the flange portion 2a with an adhesive 10 such as epoxy.
  • the lead terminal 3 is disposed so as to correspond to the bonding pad portion 12 of the electronic circuit assembly 5.
  • the electronic circuit assembly 5 and the lead terminal 3 are electrically connected to the bonding pad portion 12 included in the electronic circuit assembly 5 and the bonding pad portion 3a included in the lead terminal 3 through the fine aluminum wire 11 by wire bonding. .
  • the electronic circuit assembly 5 is bonded and fixed to the upper surface of the base 2 with an adhesive 10
  • the electronic circuit assembly 5 and the lead terminal 3 are connected with the aluminum thin wire 11, and then these components, circuit element 6, bare chip 7, and circuit board are connected.
  • the base 2 and the lead terminal 3 are collectively embedded in the sealing resin 4 except for a part of the lead terminal 3 and a part of the flange portion 2a of the base 2.
  • the sealing resin 4 is manufactured by transfer molding.
  • thermosetting resin such as an epoxy resin
  • the resin is fluidized and solidified in the mold.
  • the bare chip 7 is joined to the circuit board 8 by solder and silver paste material, and is electrically connected to the circuit board 8 by Au fine wires 9.
  • a ceramic substrate having a high thermal conductivity is used as the circuit board 8. The heat generated in the bare chip 7 is transferred through the path radiated from the sealing resin 4 in close contact with the bare chip 7, the circuit board 8 on which the bare chip 7 is mounted, the substrate bonding portion 2 b, and the base 2. The heat is radiated to the mating member via the flange portion 2a.
  • the structure of the conventional electronic circuit device is expensive because a ceramic substrate having high thermal conductivity is used for the circuit board in order to obtain high heat dissipation.
  • a method of using a glass epoxy substrate as a circuit board but the glass epoxy substrate has a lower thermal conductivity than a ceramic substrate. The heat generated in the bare chip is transferred through the path where heat is released from the sealing resin that is in close contact with the bare chip, the circuit board on which the bare chip is mounted, the substrate bonding part, and the base, and is integrated with the base.
  • an electronic circuit assembly for controlling a transmission and a drive unit of an automobile, a base for fixing the electronic circuit assembly, and a lead terminal electrically connected to the electronic circuit assembly are molded resin.
  • a heat dissipation structure having an opening penetrating a circuit board and a base below a heat generating circuit element (bare chip), wherein both surfaces of the heat generating element are thermally connected to a sealing resin It was.
  • the heat generating circuit element (bare chip) has an opening that penetrates the circuit board and the base, and both surfaces of the heat generating element are thermally connected to the sealing resin.
  • the heat generated in the bare chip is transferred to the base via the sealing resin with high thermal conductivity instead of passing through the glass epoxy substrate with poor thermal conductivity, and the counterpart through the flange. Heat can be radiated to the member.
  • heat dissipation can be improved at low cost by using sealing resin as a heat conductive material instead of a heat sink.
  • the sealing resin can be injected into the opening that penetrates the circuit board and the base below the bare chip during transfer molding.
  • the fluidity is improved, the generation of voids at the bottom of the bare chip can be reduced, and the sealing resin can be efficiently and thermally connected to both surfaces of the bare chip.
  • FIG. 1 is a heat dissipation structure for an electronic circuit device according to a first embodiment.
  • FIG. 5 is a detailed cross-sectional view of a heat dissipation structure of Example 2.
  • FIG. 5 is a detailed cross-sectional view of a heat dissipation structure of Example 3.
  • paths of the diagonal direction which it has in a circuit board.
  • FIG. 3 is a detailed view of an opening for a passage combining a perpendicular direction and an oblique direction of the circuit board.
  • FIG. 7 is a heat dissipation structure for an electronic circuit device according to a fourth embodiment.
  • FIG. 6 is a detailed cross-sectional view of a heat dissipation structure of Example 4.
  • FIG. 6 is an opening cross-sectional view for a groove-shaped passage included in a circuit board of Example 4; Conventional electronic circuit device heat dissipation structure.
  • FIGS. 1 and 8 show an electronic circuit assembly for controlling a transmission and a drive unit of an automobile, a base for fixing the electronic circuit assembly, and lead terminals electrically connected to the electronic circuit assembly.
  • 1 is an electronic circuit device 1 sealed with a mold resin.
  • 2, 3 and 9 are detailed views of the bare chip 7 part.
  • the sectional view is a partial sectional view taken along line III-III.
  • 4 to 6 are detailed views of the passage openings 8a and 8b provided in the circuit board 8
  • FIGS. 7 and 10 are detailed views of the groove-shaped openings 8c.
  • FIG. 1 shows a first embodiment of the present invention.
  • 1B and 1C are partial cross-sectional views taken along lines II and II-II of FIG. 1A, respectively.
  • an electronic circuit assembly 5 comprising a circuit board 8 on which a circuit element 6 and a bare chip 7 are mounted is bonded and fixed to a base 2 having a flange portion 2a with an adhesive 10 such as epoxy.
  • the lead terminal 3 is disposed so as to correspond to the bonding pad portion 12 of the electronic circuit assembly 5.
  • the electronic circuit assembly 5 and the lead terminal 3 are electrically connected to the bonding pad portion 12 included in the electronic circuit assembly 5 and the bonding pad portion 3a included in the lead terminal 3 through the fine aluminum wire 11 by wire bonding. .
  • the electronic circuit assembly 5 and the lead terminal 3 are connected with the aluminum thin wire 11, and then these components, circuit element 6, bare chip 7, and circuit board are connected.
  • the base 2 and the lead terminal 3 are collectively embedded in the sealing resin 4 except for a part of the lead terminal 3 and a part of the flange portion 2a of the base 2.
  • the sealing resin 4 is manufactured by transfer molding. Generally, a thermosetting resin such as an epoxy resin is used as the sealing resin, and the resin is fluidized and solidified in the mold.
  • the bare chip 7 is joined to the circuit board 8 by solder and silver paste material, and is electrically connected to the circuit board 8 by Au fine wires 9.
  • the circuit board 8 is a glass epoxy board.
  • An opening 13 that penetrates the circuit board 8 and the base 2 is provided below the bare chip 7, and both surfaces of the bare chip 7 are in close contact with the sealing resin 4.
  • the heat generated in the bare chip 7 is radiated from the sealing resin 4 that is in close contact with both surfaces of the bare chip 7. Further, heat is transmitted through the base 2 that is in close contact with the sealing resin 4 and is radiated to the mating member through the flange portion 2a.
  • FIG. 2 shows a second embodiment of the present invention.
  • FIG. 2B is a partial cross-sectional view taken along the line III-III in FIG.
  • a passage that passes through the circuit board 8 in a direction perpendicular to the flow direction 14 of the resin.
  • Has an opening 8a for transfer improves the fluidity of the sealing resin 4 to the opening 13 penetrating the circuit board 8 and the base 2 under the bare chip 7 during transfer molding, and reduces the generation of voids under the bare chip 7
  • the sealing resin 4 is efficiently and thermally coupled to both surfaces of the bare chip 7.
  • the passage opening may be a passage opening 8b penetrating in an oblique direction with respect to the resin flow direction 14, as shown in FIG.
  • the flowability of the resin may be further improved by combining the passage opening 8 a penetrating in the orthogonal direction and the passage opening 8 b penetrating in the oblique direction.
  • path which has in the circuit board 8 may be the groove-shaped channel
  • FIG. 3 shows a third embodiment of the present invention.
  • FIG. 3B is a partial cross-sectional view taken along line III-III in FIG.
  • the circuit board 8 and the base 2 are perpendicular to the resin flow direction 14. It has openings 8a and 2c for the passages that pass through, and improves the fluidity of the sealing resin 4 to the opening 13 that penetrates the circuit board 8 and the base 2 below the bare chip 7 at the time of transfer molding.
  • the generation of voids can be reduced, and the sealing resin 4 is efficiently and thermally connected to both surfaces of the bare chip 7.
  • the passage opening may be a passage opening 8b penetrating in an oblique direction with respect to the resin flow direction 14, as shown in FIG.
  • the flowability of the resin may be further improved by combining the passage opening 8 a penetrating in the orthogonal direction and the passage opening 8 b penetrating in the oblique direction. .
  • FIG. 8 shows a fourth embodiment of the present invention.
  • 8B and 8C are partial cross-sectional views taken along lines II and II-II of FIG. 8A, respectively.
  • an electronic circuit assembly 5 including a circuit board 8 on which a circuit element 6 and a bare chip 7 are mounted is bonded and fixed to a base 2 having a flange portion 2b with an adhesive 10 such as epoxy.
  • the lead terminal 3 is disposed so as to correspond to the bonding pad portion 12 of the electronic circuit assembly 5.
  • the electronic circuit assembly 5 and the lead terminal 3 are electrically connected to the bonding pad portion 12 included in the electronic circuit assembly 5 and the bonding pad portion 3a included in the lead terminal 3 through the fine aluminum wire 11 by wire bonding. .
  • the electronic circuit assembly 5 and the lead terminal 3 are connected with the aluminum thin wire 11, and then these components, circuit element 6, bare chip 7, and circuit board are connected.
  • the base 2 and the lead terminal 3 are collectively embedded in the sealing resin 4 except for a part of the lead terminal 3 and a part of the flange portion 2a of the base 2.
  • the sealing resin 4 is manufactured by transfer molding. Generally, a thermosetting resin such as an epoxy resin is used as the sealing resin, and the resin is fluidized and solidified in the mold.
  • the bare chip 7 is joined to the circuit board 8 by solder and silver paste material, and is electrically connected to the circuit board 8 by Au fine wires 9.
  • the circuit board 8 is a glass epoxy board. An opening 13 that penetrates the circuit board 8 is provided below the bare chip 7, and both surfaces of the bare chip 7 are in close contact with the sealing resin 4. The heat generated in the bare chip 7 is radiated from the sealing resin 4 that is in close contact with both surfaces of the bare chip 7. Further, heat is transmitted through the base 2 that is in close contact with the sealing resin 4, and heat is radiated to the mating member through the flange portion 2a integrated with the base. As shown in FIG. 9, in order to make it easy to fill the sealing resin 4 in the opening 13 penetrating the circuit board 8 and the base 2, the circuit board 8 is used for a passage penetrating in the direction perpendicular to the resin flow direction 14.
  • FIG. 9B is a partial cross-sectional view taken along the line II of FIG. 9A. Further, as shown in FIGS.
  • the flowability of the resin may be further improved by combining the passage opening 8 a penetrating in the orthogonal direction and the passage opening 8 b penetrating in the oblique direction.
  • path which has in the circuit board 8 may be the groove-shaped channel

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Control Of Transmission Device (AREA)

Abstract

　ベアチップで発生した熱の放熱性が悪化する課題がある。また、放熱性を改善するために、ヒートシンクを露出するように封止樹脂に埋設すると剥離やクラック発生の課題がある。　自動車の変速機及び駆動機を制御するための電子回路組立体と、前記電子回路組立体を固定するベースと、前記電子回路組立体を電気的に接続したリード端子とを、モールド樹脂で封止した電子回路装置において、発熱回路素子（ベアチップ）下部に回路基板及びベースを貫通する開口部を有し、発熱素子の両面が封止樹脂と熱的に連結したことを特徴とする放熱構造とした。

Description

変速機制御装置及び電子回路装置
　本発明は、自動車用の変速制御装置に関するものであり、例えば自動変速機を制御するためのコントロールバルブと、前記コントロールバルブの制御対象部品を制御するための電子回路装置等に好適なものである。
　図１１は自動車の変速機及び駆動機を制御するための電子回路組立体と、前記電子回路組立体を固定するベースと、前記電子回路組立体を電気的に接続したリード端子とを、モールド樹脂で封止した電子回路装置１である。図１１（Ｂ），（Ｃ）は、それぞれ、図１１（Ａ）のI－I線およびにII－II線に沿う部分断面図である。フランジ部２ａを有するベース２に、回路素子６およびベアチップ７を実装した回路基板８からなる電子回路組立体５がエポキシ等の接着剤１０で接着固定されている。リード端子３は、電子回路組立体５のボンディングパット部１２と対応するように配置されている。電子回路組立体５とリード端子３は、電子回路組立体５に有するボンディングパット部１２とリード端子３に有するボンディングパット部３ａがワイヤボンディング法でアルミ細線１１を介して電気的に接続されている。電子回路組立体５を接着剤１０でベース２上面に接着固定し、電子回路組立体５とリード端子３とをアルミ細線１１で接続した後、これらの部品、回路素子６，ベアチップ７，回路基板８，ベース２，リード端子３を一括して封止樹脂４にリード端子３の一部やベース２のフランジ部２ａの一部を除いて埋設する。封止樹脂４は、トランスファモールド成形により製作され、一般に封止樹脂としてはエポキシ樹脂等の熱硬化性樹脂を用い、型内に流動および固化させるものである。ベアチップ７ははんだおよび銀ペースト材で回路基板８に接合され、Ａｕ細線９で回路基板８と電気的に接続されている。回路基板８は熱伝導率の大きいセラミック基板が用いられる。ベアチップ７で発生した熱はベアチップ７に密着している封止樹脂４から放熱される経路と、ベアチップ７を実装している回路基板８，基板接着部２ｂ，ベース２を経由して熱を伝え、フランジ部２ａを介して相手部材へ放熱するものである。
特開２００２－２６１１９７号公報 特開２００７－４３１９６号公報
　しかしながら、従来の電子回路装置の構造は、高い放熱性を得るために回路基板に熱伝導率の高いセラミック基板が用いられコスト高になっている。安価な構造とするためには、回路基板にガラスエポキシ基板を採用する方法があるが、ガラスエポキシ基板はセラミック基板に比べ熱伝導率が悪くなってしまう。ベアチップで発生した熱はベアチップに密着している封止樹脂から放熱される経路と、ベアチップを実装している回路基板，基板接着部，ベースを経由して熱を伝え、ベースと一体になっているフランジ部を介して相手部材へ放熱するものであるが、回路基板に熱伝導率の悪いガラスエポキシ基板を用いると、ベアチップで発生した熱の放熱性が悪化する課題がある。また、放熱性を改善するために、ヒートシンクを露出するように封止樹脂に埋設すると剥離やクラック発生の課題がある。さらに、部品点数が増加し生産性の悪化，コスト高となってしまう。
　上記目的は、特許請求の範囲に記載の発明により達成される。
　例えば、自動車の変速機及び駆動機を制御するための電子回路組立体と、前記電子回路組立体を固定するベースと、前記電子回路組立体を電気的に接続したリード端子とを、モールド樹脂で封止した電子回路装置において、発熱回路素子（ベアチップ）下部に回路基板及びベースを貫通する開口部を有し、発熱素子の両面が封止樹脂と熱的に連結したことを特徴とする放熱構造とした。
　本発明によれば第一の効果として、前記電子回路装置において、発熱回路素子（ベアチップ）下部に回路基板及びベースを貫通する開口部を有し、発熱素子の両面が封止樹脂と熱的に連結したことで、ベアチップで発生した熱が熱伝導率の悪いガラスエポキシ基板を経由せずに、熱伝導率の高い封止樹脂を経由して、ベースに熱を伝え、フランジ部を介して相手部材へ放熱することができる。また、封止樹脂をヒートシンクの代わりに熱伝導材として用いることで安価に放熱性を向上することができる。
　第二の効果として、前記回路基板及びベースに封止樹脂が充填できる通路用の開口部を有することで、トランスファモールド成形時にベアチップ下部の回路基板及びベースを貫通する開口部への封止樹脂の流動性が改善され、ベアチップ下部のボイド発生を低減でき、ベアチップの両面に封止樹脂を効率よく熱的に連結するができる。
　これらにより、前記電子回路装置において、放熱性向上および放熱構造の簡略化を図ることができる。
実施例１の電子回路装置の放熱構造。 実施例２の放熱構造の詳細断面図。 実施例３の放熱構造の詳細断面図。 回路基板に有する斜方向の通路用の開口詳細図。 回路基板に有する直行方向を組合せた通路用の開口詳細図。 回路基板に有する直行方向と斜方向を組合せた通路用の開口詳細図。 回路基板に有する溝形の通路用の開口断面図。 実施例４の電子回路装置の放熱構造。 実施例４の放熱構造の詳細断面図。 実施例４の回路基板に有する溝形の通路用の開口断面図。 従来の電子回路装置の放熱構造。
　以下、本発明の実施例を図１から図１０より説明する。図１，図８は自動車の変速機及び駆動機を制御するための電子回路組立体と、前記電子回路組立体を固定するベースと、前記電子回路組立体を電気的に接続したリード端子とを、モールド樹脂で封止した電子回路装置１である。図２，図３，図９はベアチップ７部の詳細図である。断面図はIII－III線に沿う一部断面図である。図４から図６は回路基板８に設けた貫通した通路用の開口部８ａ，８ｂの詳細図であり、図７，図１０は溝形の通路用の開口部８ｃの詳細図である。
　図１は本発明の第１の実施例を示すものである。図１（Ｂ），（Ｃ）は、それぞれ、図１（Ａ）のI－I線およびにII－II線に沿う部分断面図である。
　本実施例では、フランジ部２ａを有するベース２に、回路素子６およびベアチップ７を実装した回路基板８からなる電子回路組立体５がエポキシ等の接着剤１０で接着固定されている。リード端子３は、電子回路組立体５のボンディングパット部１２と対応するように配置されている。電子回路組立体５とリード端子３は、電子回路組立体５に有するボンディングパット部１２とリード端子３に有するボンディングパット部３ａがワイヤボンディング法でアルミ細線１１を介して電気的に接続されている。電子回路組立体５を接着剤１０でベース２上面に接着固定し、電子回路組立体５とリード端子３とをアルミ細線１１で接続した後、これらの部品、回路素子６，ベアチップ７，回路基板８，ベース２，リード端子３を一括して封止樹脂４にリード端子３の一部やベース２のフランジ部２ａの一部を除いて埋設する。封止樹脂４は、トランスファモールド成形により製作され、一般に封止樹脂としてはエポキシ樹脂等の熱硬化性樹脂を用い、型内に流動および固化させるものである。ベアチップ７ははんだおよび銀ペースト材で回路基板８に接合され、Ａｕ細線９で回路基板８と電気的に接続されている。回路基板８はガラスエポキシ基板が用いられる。ベアチップ７下部には回路基板８及びベース２を貫通する開口部１３を有し、ベアチップ７の両面は封止樹脂４と密着している。ベアチップ７で発生した熱は、ベアチップ７の両面に密着している封止樹脂４から放熱される。また、封止樹脂４と密着しているベース２を経由して熱を伝え、フランジ部２ａを介して相手部材へ放熱するものである。
　図２は本発明の第２の実施例を示すものである。図２（Ｂ）は、図２（Ａ）のIII－III線に沿う部分断面図である。前記の実施例１に対して回路基板８及びベース２を貫通する開口部１３に封止樹脂４が充填しやすくするため、回路基板８に、樹脂の流動方向１４に対し直行方向の貫通した通路用の開口部８ａを有し、トランスファモールド成形時にベアチップ７下部の回路基板８及びベース２を貫通する開口部１３への封止樹脂４の流動性を改善し、ベアチップ７下部のボイド発生を低減でき、ベアチップ７の両面に封止樹脂４を効率よく熱的に連結するものである。このとき、通路用の開口部は、図４に示すように、樹脂の流動方向１４に対し斜方向の貫通した通路用の開口部８ｂでもよい。また、図５，図６に示すように、直行方向の貫通した通路用の開口部８ａと斜方向の貫通した通路用の開口部８ｂを組み合わせて、さらに樹脂の流動性を改善してもよい。また、回路基板８に有する通路の開口部は、図７に示すように、溝形の通路用の開口部８ｃでもよい。
　図３は本発明の第３の実施例を示すものである。図３（Ｂ）は、図３（Ａ）のIII－III線に沿う部分断面図である。前記の実施例１に対して回路基板８及びベース２を貫通する開口部１３に封止樹脂４が充填しやすくするため、回路基板８とベース２に、樹脂の流動方向１４に対し直行方向の貫通した通路用の開口部８ａ，２ｃを有し、トランスファモールド成形時にベアチップ７下部の回路基板８及びベース２を貫通する開口部１３への封止樹脂４の流動性を改善し、ベアチップ７下部のボイド発生を低減でき、ベアチップ７の両面に封止樹脂４を効率よく熱的に連結するものである。このとき、通路用の開口部は、図４に示すように、樹脂の流動方向１４に対し斜方向の貫通した通路用の開口部８ｂでもよい。また、図５，図６に示すように、直行方向の貫通した通路用の開口部８ａと斜方向の貫通した通路用の開口部８ｂを組み合わせて、さらに樹脂の流動性を改善してもよい。
　図８は本発明の第４の実施例を示すものである。図８（Ｂ），（Ｃ）は、それぞれ、図８（Ａ）のI－I線およびにII－II線に沿う部分断面図である。
　本実施例では、フランジ部２ｂを有するベース２に、回路素子６およびベアチップ７を実装した回路基板８からなる電子回路組立体５がエポキシ等の接着剤１０で接着固定されている。リード端子３は、電子回路組立体５のボンディングパット部１２と対応するように配置されている。電子回路組立体５とリード端子３は、電子回路組立体５に有するボンディングパット部１２とリード端子３に有するボンディングパット部３ａがワイヤボンディング法でアルミ細線１１を介して電気的に接続されている。電子回路組立体５を接着剤１０でベース２上面に接着固定し、電子回路組立体５とリード端子３とをアルミ細線１１で接続した後、これらの部品、回路素子６，ベアチップ７，回路基板８，ベース２，リード端子３を一括して封止樹脂４にリード端子３の一部やベース２のフランジ部２ａの一部を除いて埋設する。封止樹脂４は、トランスファモールド成形により製作され、一般に封止樹脂としてはエポキシ樹脂等の熱硬化性樹脂を用い、型内に流動および固化させるものである。ベアチップ７ははんだおよび銀ペースト材で回路基板８に接合され、Ａｕ細線９で回路基板８と電気的に接続されている。回路基板８はガラスエポキシ基板が用いられる。ベアチップ７下部には回路基板８を貫通する開口部１３を有し、ベアチップ７の両面は封止樹脂４と密着している。ベアチップ７で発生した熱は、ベアチップ７の両面に密着している封止樹脂４から放熱される。また、封止樹脂４と密着しているベース２を経由して熱を伝え、ベースと一体になっているフランジ部２ａを介して相手部材へ放熱するものである。図９に示すように、回路基板８及びベース２を貫通する開口部１３に封止樹脂４が充填しやすくするため、回路基板８に、樹脂の流動方向１４に対し直行方向の貫通した通路用の開口部８ａを有し、トランスファモールド成形時にベアチップ７下部の回路基板８及びベース２を貫通する開口部１３への封止樹脂４の流動性を改善し、ベアチップ７下部のボイド発生を低減でき、ベアチップ７の両面に封止樹脂４を効率よく熱的に連結するものである。このとき、通路用の開口部は、図４に示すように、樹脂の流動方向１４に対し斜方向の貫通した通路用の開口部８ｂでもよい。なお、図９（Ｂ）は、図９（Ａ）のI－I線に沿う部分断面図である。また、図５，図６に示すように、直行方向の貫通した通路用の開口部８ａと斜方向の貫通した通路用の開口部８ｂを組み合わせて、さらに樹脂の流動性を改善してもよい。また、回路基板８に有する通路の開口部は、図７に示すように、溝形の通路用の開口部８ｃでもよい。
１　電子回路装置
２　ベース
２ａ　フランジ部
２ｂ　基板接着部
２ｃ　貫通した開口部
３　リード端子
３ａ，１２　ボンディングパット部
４　封止樹脂
５　電子回路組立体
６　回路素子
７　ベアチップ
８　回路基板
８ａ　貫通した通路用の開口部（直行方向）
８ｂ　貫通した通路用の開口部（斜方向）
８ｃ　溝形の通路用の開口部
９　Ａｕ細線
１０　接着剤
１１　アルミ細線
１３　チップ下部の開口部
１４　封止樹脂の流動方向

Claims (8)

  1. 　発熱素子が回路基板上に設けられ、自動車の変速機への制御信号を出力する制御回路と、
    　前記回路基板を支持するベース部材とを備え、
    　前記回路基板とベース部材とを樹脂でモールドした変速制御装置において、
    　前記発熱素子直下の前記ベース部材と前記回路基板とに開口部を設け、
    　前記樹脂が前記発熱素子の上面及び下面に直接接触することを特徴とする変速制御装置。
  2. 　請求項１において、
    　前記回路基板には、前記開口部へ通じる通路が形成され、
    　前記開口部と前記通路とが前記樹脂によって連続して充填されたことを特徴とする変速制御装置。
  3. 　請求項１において、
    　前記ベース部材の一部には、前記変速機への取り付けのためのフランジ部が形成され、
    　前記フランジ部は前記樹脂によってモールドされていないことを特徴とする変速制御装置。
  4. 　請求項２において、
    　前記通路は、前記開口部から放射状に複数個もうけられたことを特徴とする変速制御装置。
  5. 　自動車の変速機及び駆動機を制御するための電子回路組立体と、前記電子回路組立体を固定するベースと、前記電子回路組立体を電気的に接続したリード端子とを、モールド樹脂で封止した電子回路装置において、
    　発熱素子であるベアチップの下部に回路基板及びベースを貫通する開口部を有し、発熱素子の両面が封止樹脂と熱的に連結したことを特徴とする電子回路装置。
  6. 　請求項５において、
    　前記回路基板に封止樹脂が充填できる通路用の開口部を有し、発熱素子の両面が封止樹脂と熱的に連結し、前記封止樹脂とベースが熱的に連結したことを特徴とする電子回路装置。
  7. 　請求項５において、
    　前記回路基板及びベースに封止樹脂が充填できる通路用の開口部を有し、発熱素子の両面が封止樹脂と熱的に連結したことを特徴とする電子回路装置。
  8. 　自動車の変速機及び駆動機を制御するための電子回路組立体と、前記電子回路組立体を固定するベースと、前記電子回路組立体を電気的に接続したリード端子とを、モールド樹脂で封止した電子回路装置において、
    　発熱素子であるベアチップの下部の回路基板の開口部と、前記回路基板に封止樹脂が充填できる通路用の開口部を有し、発熱素子の両面が封止樹脂と熱的に連結し、前記封止樹脂とベースが熱的に連結したこと備えたことを特徴とする電子回路装置。
PCT/JP2012/054162 2011-03-01 2012-02-21 変速機制御装置及び電子回路装置 WO2012117899A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE112012001049.3T DE112012001049B4 (de) 2011-03-01 2012-02-21 Getriebesteuervorrichtung und elektronische Schaltungsvorrichtung
US13/985,235 US20130329384A1 (en) 2011-03-01 2012-02-21 Transmission Control Device and Electronic Circuit Device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011043464A JP5699006B2 (ja) 2011-03-01 2011-03-01 変速機制御装置及び電子回路装置
JP2011-043464 2011-03-01

Publications (1)

Publication Number Publication Date
WO2012117899A1 true WO2012117899A1 (ja) 2012-09-07

Family

ID=46757838

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2012/054162 WO2012117899A1 (ja) 2011-03-01 2012-02-21 変速機制御装置及び電子回路装置

Country Status (4)

Country Link
US (1) US20130329384A1 (ja)
JP (1) JP5699006B2 (ja)
DE (1) DE112012001049B4 (ja)
WO (1) WO2012117899A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102022210525A1 (de) 2022-10-05 2024-04-11 Vitesco Technologies Germany Gmbh Elektronische Baugruppe, sowie Verfahren zu deren Herstellung

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8207607B2 (en) * 2007-12-14 2012-06-26 Denso Corporation Semiconductor device with resin mold
KR20230023834A (ko) * 2020-12-09 2023-02-20 주식회사 솔루엠 에어포켓 방지 기판, 에어포켓 방지 기판 모듈, 이를 포함하는 전기기기 및 이를 포함하는 전기기기의 제조 방법
USD984397S1 (en) * 2021-03-16 2023-04-25 Yidong Cai Circuit board

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03138952A (ja) * 1989-10-25 1991-06-13 Hitachi Ltd 半導体デバイス
JP2000286379A (ja) * 1999-01-28 2000-10-13 Fujitsu Ltd 半導体装置及びその製造方法
JP2007043196A (ja) * 2006-10-10 2007-02-15 Hitachi Ltd 電子回路装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6188579B1 (en) * 1999-07-12 2001-02-13 Lucent Technologies Inc. Apparatus and methods for forming a printed wiring board assembly to reduce pallet warpage
US6400574B1 (en) * 2000-05-11 2002-06-04 Micron Technology, Inc. Molded ball grid array
JP3553513B2 (ja) 2001-03-06 2004-08-11 株式会社日立製作所 自動車用電子回路装置
DE10210041B4 (de) * 2002-03-07 2009-04-16 Continental Automotive Gmbh Wärmeableitvorrichtung zum Ableiten von Wärme, die von einem elektrischen Bauelement erzeugt wird und Verfahren zum Herstellen einer derartigen Wärmeableitvorrichtung
JP4283514B2 (ja) * 2002-09-24 2009-06-24 株式会社日立製作所 電子回路装置
JP4821537B2 (ja) * 2006-09-26 2011-11-24 株式会社デンソー 電子制御装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03138952A (ja) * 1989-10-25 1991-06-13 Hitachi Ltd 半導体デバイス
JP2000286379A (ja) * 1999-01-28 2000-10-13 Fujitsu Ltd 半導体装置及びその製造方法
JP2007043196A (ja) * 2006-10-10 2007-02-15 Hitachi Ltd 電子回路装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102022210525A1 (de) 2022-10-05 2024-04-11 Vitesco Technologies Germany Gmbh Elektronische Baugruppe, sowie Verfahren zu deren Herstellung

Also Published As

Publication number Publication date
DE112012001049T5 (de) 2013-12-12
US20130329384A1 (en) 2013-12-12
DE112012001049B4 (de) 2016-04-07
JP5699006B2 (ja) 2015-04-08
JP2012182267A (ja) 2012-09-20

Similar Documents

Publication Publication Date Title
KR101643332B1 (ko) 초음파 웰딩을 이용한 클립 본딩 반도체 칩 패키지 및 그 제조 방법
CN104051376B (zh) 功率覆盖结构及其制作方法
TWI628750B (zh) 功率覆蓋結構及其製造方法
WO2019146402A1 (ja) 電力変換装置及び電力変換装置の製造方法
JP5607829B2 (ja) 半導体装置
JP2004111435A (ja) コネクタと電子部品の一体モールド構造を有する電気・電子モジュールとその成形方法
JP5120032B2 (ja) 電子装置
JP4904604B1 (ja) Ｌｅｄモジュール装置及びその製造方法
WO2012117899A1 (ja) 変速機制御装置及び電子回路装置
JP2008141140A (ja) 半導体装置
JP4967701B2 (ja) 電力半導体装置
JP5262983B2 (ja) モールドパッケージおよびその製造方法
JP6354163B2 (ja) 回路基板および電子装置
JP6797002B2 (ja) 半導体装置および半導体装置の製造方法
JP7088224B2 (ja) 半導体モジュールおよびこれに用いられる半導体装置
KR20150031029A (ko) 반도체 패키지 및 그 제조 방법
JP5239736B2 (ja) 電子装置
JP6391430B2 (ja) 電子制御装置およびその製造方法
JP2014216326A (ja) 電子装置およびその製造方法
JP2013149876A (ja) パッケージオンパッケージ型半導体装置およびパッケージオンパッケージ型半導体装置の製造方法
JP2019114759A (ja) 回路モジュール、回路モジュールの製造方法
WO2020189508A1 (ja) 半導体モジュールおよびこれに用いられる半導体装置
JP2019530980A (ja) 特に変速機制御モジュール用の電子アセンブリを製造する方法及び電子アセンブリ
JP6417898B2 (ja) 半導体装置の製造方法
JP2010040583A (ja) 電子回路装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12752192

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 13985235

Country of ref document: US

WWE Wipo information: entry into national phase

Ref document number: 1120120010493

Country of ref document: DE

Ref document number: 112012001049

Country of ref document: DE

122 Ep: pct application non-entry in european phase

Ref document number: 12752192

Country of ref document: EP

Kind code of ref document: A1