WO2012106851A1 - 一种劈裂半导体芯片或封装基板的方法 - Google Patents

一种劈裂半导体芯片或封装基板的方法 Download PDF

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Publication number
WO2012106851A1
WO2012106851A1 PCT/CN2011/072217 CN2011072217W WO2012106851A1 WO 2012106851 A1 WO2012106851 A1 WO 2012106851A1 CN 2011072217 W CN2011072217 W CN 2011072217W WO 2012106851 A1 WO2012106851 A1 WO 2012106851A1
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Prior art keywords
package substrate
crack
semiconductor chip
splitting
filler
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PCT/CN2011/072217
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English (en)
French (fr)
Inventor
庄家铭
蔡家豪
许圣贤
温斯永
于涛
程于任
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安徽三安光电有限公司
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Publication of WO2012106851A1 publication Critical patent/WO2012106851A1/zh

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/16—Composite materials, e.g. fibre reinforced
    • B23K2103/166—Multilayered materials
    • B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic

Definitions

  • the present invention relates to a dicing separation method for a semiconductor chip or a package substrate thereof, and more particularly to a method of cleavage of a semiconductor chip or a package substrate thereof.
  • a light-emitting diode (Light Emitting Diode in English) is a type of semiconductor diode.
  • the LED light-emitting chip is formed by dicing and disintegrating the wafer.
  • the prior art uses diamond cutting.
  • Laser or chip cutting Laser Scribing
  • the chip is chopped and broken by the cleavage knife to form a small number of chips (grains), and the package substrate of the semiconductor chip is also cleaved into a plurality of small-area package substrates in the above manner.
  • At least the splitting is performed by the splitting machine splitting knife.
  • the extrusion will occur, causing the epitaxial sheet to warp and the cracking line to bend, resulting in good product.
  • the condition of low rate; 5 The existing splitting technology adopts a laser cutting line, and at least the splitting knife splits the knife to apply the splitting method, and the production speed is higher. Production capacity is small. Summary of the invention
  • the present invention is directed to a method of splitting a semiconductor chip or a package substrate thereof.
  • the technical solution adopted by the present invention to solve the above problems is: a method for splitting a semiconductor chip or a package substrate thereof, comprising the following steps:
  • the temperature of the filler is controlled such that the filler generates an expansion stress to pressurize the crack, and the crack extends downward under the action of the expansion stress to crack the chip or its package substrate.
  • the filler is water, and when the water is condensed into solid ice, an expansion stress for cracking on the chip or the package substrate may be generated; and the crack formed on the chip or the package substrate by laser continuous output is formed. Or a groove formed by scratching on the chip or the package substrate by a periodic interrupted output of the laser; the present invention preferentially uses a laser that is intermittently outputted by a discontinuous output, and the laser scratch is arranged in a perforated manner to the chip. Or the package substrate is subjected to a dicing process.
  • the chip or its package substrate is pasted with a transparent film to seal the crack; the transparent film is used to seal the crack or the filler in the crack is prevented from leaking, and the control is controlled.
  • the filler temperature expands the filler such that the filler in each crack creates an expansion stress that compresses the crack, which is used to expand the split crack.
  • the water in the present invention is deionized water, purified water, mineral water, distilled water or ultrapure water.
  • deionized water is preferably used as a filler for filling the crack of the chip or its packaging substrate, and the cold swelling physics of water is condensed into ice.
  • the feature generates an expansion stress of the top pressure expansion crack, and the expansion stress can expand the cracking crack;
  • the package substrate is a metal substrate, a ceramic substrate, a plastic substrate or a semiconductor substrate, and the package substrate is preferably a ceramic substrate.
  • the beneficial effects of the present invention are: forming a crack in a perforated arrangement on the surface of the chip or its package substrate by scratching the chip or its package substrate by laser; filling the filler into the crack; Filling temperature, causing the filler to generate expansion stress, pressurizing and expanding the crack, so that the crack extends downward to split the chip or its package substrate, avoiding the splitting caused by the traditional splitting technique and causing the splitting And the occurrence of abnormal phenomena such as cracking.
  • FIG. 1 is a schematic view showing a crack formed in a package substrate by laser scratches according to an embodiment of the present invention
  • Figure 2 is a cross-sectional view along line A-A of Figure 1 of the first embodiment of the present invention
  • FIG. 3 is a schematic structural view of injecting water into a crack of a package substrate and sealing the crack with a transparent film according to an embodiment of the present invention
  • FIG. 4 is a schematic view showing the structure of water in a crack of a package substrate in which a condensation crack is formed according to an embodiment of the present invention
  • FIG. 5 is a cross-sectional view showing a structure of a crack on a substrate of a chip by laser scratching according to a second embodiment of the present invention
  • FIG. 6 is a schematic view showing a structure of injecting water into a crack in a village bottom of a chip and sealing the crack with a transparent film according to Embodiment 2 of the present invention;
  • Fig. 7 is a structural schematic view showing the condensation cracking of water in a crack in a village bottom of the chip according to the second embodiment of the present invention.
  • Embodiment 1 A method for cleaving a package substrate of a semiconductor chip, comprising the following steps:
  • a ceramic substrate is provided as a package substrate 1 of a semiconductor chip, and the package substrate 1 is scratched by a laser, and a periodic intermittent output of the laser is controlled to form a plurality of cracks 2 on the surface of the package substrate 1.
  • the crack 2 is The line groove drawn by the laser on the surface of the package substrate 1 has a V shape.
  • the transparent film 4 is attached to the package substrate 1 to seal the crack 2, and the surface tension of the deionized water 3 is adhered to the transparent layer.
  • the membrane 4 is filled with deionized water 3 in each of the cracks 2.
  • the de-ionized water 3 is condensed into the expansion stress generated by the solid ice 5 to continuously press and expand the cracks 2 of the package substrate 1.
  • the cracks 2 of the package substrate 1 are caused by the top pressure expansion of the expansion stress of the solid ice 5, and the cracks 2 extend downward to form a gap 6 which is extended and cracked, and the package substrate 1 is split.
  • the solid ice 5 is melted into ionized water 3 by temperature control to obtain a plurality of small-area package substrates 1 to complete the splitting work of the package substrate 1.
  • Embodiment 2 is a diagrammatic representation of Embodiment 1:
  • a method of splitting a semiconductor chip comprising the following steps:
  • a semiconductor chip 7 is provided.
  • the semiconductor chip 7 is scratched by a laser, and the periodic intermittent output of the laser is controlled to form a crack 2 on the surface of the substrate 71 of the semiconductor chip.
  • the crack 2 is a line drawn by the laser on the surface of the village 71.
  • the groove has a V shape.
  • the transparent film 4 is pasted on the semiconductor chip 7, and the transparent film 4 is adhered by the surface tension of the deionized water 3.
  • the transparent film 4 seals the crack 2 opening of the village bottom 71, so that the cracks 2 on the bottom 71 of the semiconductor chip 7 are filled with deionized water 3, and the solid expansion stress generated by solidification of the deionized water 3 into solid ice 5 is continuous.
  • a plurality of cracks 2 on the bottom 71 of the village are expanded to cause the slits 2 on the semiconductor chip 7 to extend to form a gap 6 which is extended and cracked, and the semiconductor chip 7 is split.
  • the solid ice 5 is melted into ionized water 3 to obtain a plurality of small-area semiconductor chip dies, and the dicing operation of the semiconductor chip 7 is completed.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)

Description

本申请要求于 2011 年 2 月 12 日提交中国专利局、 申请号为 201110036770.8、 发明名称为"一种劈裂半导体芯片或其封装基板的方法 "的中 国专利申请的优先权， 其全部内容通过引用结合在本申请中。 技术领域
本发明涉及半导体芯片或其封装基板的划片分离方法，特别是一种劈裂半 导体芯片或其封装基板的方法。 背景技术
发光二极管（英文为 Light Emitting Diode, 筒称 LED )是半导体二极管的 一种， LED发光芯片是由晶圓片划片、 崩离而成的， LED芯片切片技术中， 现有技术会使用钻石切割刀或激光切割 （Laser Scribing)对芯片进行切割，先以 钻石切割刀加压形成微小裂痕或是激光切割划出深度约 18 ~ 25 μ ιη的切割线 后， 再使用劈裂机 (Breaker), 以劈裂刀向下施压的方式对芯片进行劈裂断开形 成若干小面积的芯片 （晶粒）， 半导体芯片的封装基板也大都采用上述方式劈 裂断开成若干小面积的封装基板。
目前采用劈裂机技术对于 LED芯片进行裂片分离存在的以下主要问题:① 劈裂机 (Breaker)裂片时会较难对准激光划线， 造成芯片水平未调正， 容易造成 劈裂偏移， 最后会导致有双晶和乱裂等异常； ②由于外延片有应力导致芯片翘 曲， 若使用无自动对焦 (auto focus)的激光切割进行划线，存在划片的划裂深度 不一致的问题， 将导致以传统裂片机裂片时， 产生乱裂及裂片良率偏低的问 题； ③以现有裂片技术， 采用外加应力方式加以施压， 可能会导致芯片表面压 伤或是污染的情形发生； ④现有的裂片技术， 是一条激光划裂线， 至少以裂片 机裂片刀施压一次的方式进行裂片， 会有挤压的情形发生， 导致外延片翘曲, 划裂线弯曲， 导致产品良率偏低的状况； ⑤ 现有裂片技术采用一条激光划裂 线， 至少以裂片机裂片刀施压一次的方式进行裂片， 生产速度较慢， 产能较 小。 发明内容
为解决上述问题，本发明旨在提出一种劈裂半导体芯片或其封装基板的方 法。
本发明解决上述问题所采用的技术方案是：一种劈裂半导体芯片或其封装 基板的方法， 包含如下步骤：
提供一半导体芯片或其封装基板；
通过激光对半导体芯片或其封装基板划痕，控制激光连续输出或周期性间 断输出在芯片或其封装基板的表面形成裂缝；
在所述裂缝中填入填充物；
控制填充物的温度，使填充物产生膨胀应力顶压扩撑裂缝， 裂缝在膨胀应 力的作用下向下延伸以裂开芯片或其封装基板。
本发明工艺中， 所述的填充物为水， 水凝结成固态冰时可产生用于顶压芯 片或封装基板上裂缝的膨胀应力；通过激光连续输出在芯片或封装基板上划痕 形成的裂缝为线沟槽；或是通过激光周期性间断输出在芯片或封装基板上划痕 形成的裂缝为孔槽； 本发明优先采用通过周期性间断输出的激光， 激光划痕呈 打孔式排列对芯片或其封装基板进行划裂加工。
本发明工艺中， 在芯片或其封装基板的裂缝中填充满填充物后， 芯片或其 封装基板贴上透明膜封住裂缝；采用透明膜封住裂缝或避免裂缝中的填充物外 漏，控制填充物温度使填充物膨胀，使每个裂缝中的填充物都产生顶压扩撑裂 缝的膨胀应力， 该膨胀应力用于扩撑劈裂裂缝。
本发明中的水为去离子水、 纯净水、 矿泉水、 蒸馏水或超纯水， 本发明优 选采用去离子水作为填充芯片或其封装基板裂缝的填充物，利用水凝结成冰的 冷胀物理特征产生顶压扩撑裂缝的膨胀应力， 该膨胀应力可扩撑劈裂裂缝； 封 装基板为金属基板、 陶瓷基板、 塑料基板或半导体基板， 本发明优先采用封装 基板为陶瓷基板。
本发明的有益效果是： 通过激光对芯片或其封装基板划痕，在芯片或其封 装基板的表面形成呈打孔式排列的裂缝； 将填充物填充入裂缝中； 通过控制填 充物温度，使填充物产生膨胀应力顶压扩撑裂缝，使裂缝向下延伸以劈裂开芯 片或其封装基板，避免使用传统裂片技术划片造成的造成劈裂偏移而导致有双 晶和乱裂等异常现象的产生。
附图说明 通过附图所示， 本发明的上述及其它目的、 特征和优势将更加清晰。 在全 部附图中相同的附图标记指示相同的部分。并未刻意按实际尺寸等比例缩放绘 制附图， 重点在于示出本发明的主旨。
图 1 为本发明实施例一通过激光划痕在封装基板形成间断的裂缝的示意 图；
图 2为本发明实施例一图 1的 A-A剖视图；
图 3 为本发明实施例一在封装基板的裂缝中注入水并用透明膜封住裂缝 的结构示意图；
图 4 为本发明实施例一对封装基板裂缝中的水进行凝结撑裂裂缝的结构 示意图；
图 5为本发明实施例二通过激光划痕在芯片的村底上裂缝的结构剖视图； 图 6 为本发明实施例二在芯片的村底上裂缝中注入水并用透明膜封住裂 缝的结构示意图；
图 7 为本发明实施例二对芯片的村底裂缝中的水进行凝结撑裂裂缝的结 构示意图。
图中附图标识为： 1.封装基板； 2.裂缝； 3.去离子水； 4.透明膜； 5.固体冰； 6.延伸开裂的间隙; 7.芯片; 71.村底。 具体实施方式
为使本发明的上述目的、特征和优点能够更加明显易懂， 下面结合附图对 本发明的具体实施方式做详细的说明。
下面结合附图和实施例对本发明进一步说明。 实施例一: 一种劈裂半导体芯片的封装基板的方法， 包含如下步骤：
如图 1和图 2所示， 提供一陶瓷基板作为半导体芯片的封装基板 1 , 通过 激光对封装基板 1划痕，控制激光周期性间断输出在封装基板 1的表面形成若 干裂缝 2 , 裂缝 2为激光在封装基板 1的表面划出的线沟槽， 其形状呈 V形。
如图 3和图 4所示，在线沟槽状的裂缝 2中注满去离子水 3后，在封装基 板 1贴上透明膜 4封住裂缝 2 , 利用去离子水 3的表面张力粘贴住透明膜 4 , 使各裂缝 2中都注满去离子水 3 , 通过控制离子水 3温度， 使去离子水 3凝结 成固体冰 5产生的膨胀应力连续顶压扩撑封装基板 1的若干裂缝 2 , 使得封装 基板 1的各裂缝 2在固体冰 5的膨胀应力的顶压扩撑作用下，裂缝 2向下延伸 形成延伸开裂的间隙 6 , 将封装基板 1劈裂开。
通过温度控制将固体冰 5融化成离子水 3 ,得到若干小面积的封装基板 1 , 完成封装基板 1的裂片工作。
实施例二：
一种劈裂半导体芯片的方法， 包含如下步骤：
如图 5提供一半导体芯片 7 , 通过激光对半导体芯片 7划痕， 控制激光周 期性间断输出在半导体芯片 Ί的村底 71表面形成裂缝 2 , 裂缝 2为激光在村 底 71表面划出的线沟槽， 其形状呈 V形。
如图 6和图 7所示，在线沟槽式的裂缝 2中注满去离子水 3后，在半导体 芯片 7上贴上透明膜 4 , 利用去离子水 3的表面张力粘贴住透明膜 4 , 透明膜 4封住村底 71裂缝 2开口， 使半导体芯片 7的村底 71上的各裂缝 2中都注满 去离子水 3 , 使去离子水 3凝固成固体冰 5产生的固态膨胀应力连续扩撑村底 71上的若干裂缝 2 ,使半导体芯片 7上的各裂缝 2延伸形成延伸开裂的间隙 6 , 将半导体芯片 7劈裂开。
将固体冰 5融化成离子水 3 , 得到若干小面积的半导体芯片晶粒， 完成半 导体芯片 7的裂片工作。 以上实施例仅供说明本发明之用， 而非对本发明的限制， 本技术领域的普 通技术人员，在不脱离本发明的精神和范围的情况下，还可以作出各种变换或 变化； 所有等同的技术方案也应该属于本发明的范畴， 由各权利要求限定。

Claims

权 利 要 求
1、 一种劈裂半导体芯片或其封装基板的方法， 包含如下步骤： 提供一半导体芯片或其封装基板；
通过激光对半导体芯片或其封装基板划痕，控制激光连续输出或周期性间 断输出在芯片或其封装基板的表面形成裂缝；
在所述裂缝中填入填充物； 控制填充物的温度，使填充物产生膨胀应力顶压扩撑裂缝， 裂缝在膨胀应 力的作用下向下延伸以裂开芯片或其封装基板。
2、 如权利要求 1所述的一种劈裂半导体芯片或其封装基板的方法， 其特征在 于： 所述填充物为水。
3、 如权利要求 1所述的一种劈裂半导体芯片或其封装基板的方法， 其特征在 于： 所述裂缝为线沟槽。
4、 如权利要求 1所述的一种劈裂半导体芯片或其封装基板的方法， 其特征在 于： 所述裂缝为孔槽。
5、 如权利要求 1、 2或 4所述的一种劈裂半导体芯片或其封装基板的方法， 其 特征在于， 在所述裂缝中填充满填充物后， 还包括步骤： 在半导体芯片或其封 装基板上贴上透明膜以封住裂缝。
6、 如权利要求 1或 2所述的一种劈裂半导体芯片或其封装基板的方法， 其特 征在于： 所述填充物为去离子水、 纯净水、 矿泉水、 蒸馏水或超纯水。
7、 如权利要求 1所述的一种劈裂半导体芯片或其封装基板的方法， 其特征在 于： 所述封装基板为金属基板、 陶瓷基板、 塑料基板或半导体基板。
PCT/CN2011/072217 2011-02-12 2011-03-28 一种劈裂半导体芯片或封装基板的方法 WO2012106851A1 (zh)

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