CN111180355B - 一种具有玻璃化转变温度的模材的分离方法 - Google Patents
一种具有玻璃化转变温度的模材的分离方法 Download PDFInfo
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- CN111180355B CN111180355B CN201910470179.XA CN201910470179A CN111180355B CN 111180355 B CN111180355 B CN 111180355B CN 201910470179 A CN201910470179 A CN 201910470179A CN 111180355 B CN111180355 B CN 111180355B
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- 238000000926 separation method Methods 0.000 title claims abstract description 13
- 238000005520 cutting process Methods 0.000 claims abstract description 51
- 238000000034 method Methods 0.000 claims abstract description 29
- 239000000178 monomer Substances 0.000 claims abstract description 6
- 230000008569 process Effects 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 11
- 238000004080 punching Methods 0.000 claims description 11
- 238000004321 preservation Methods 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 5
- 239000012778 molding material Substances 0.000 claims description 2
- 230000009471 action Effects 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 3
- 229920002521 macromolecule Polymers 0.000 abstract description 2
- 238000004806 packaging method and process Methods 0.000 description 13
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- 238000004017 vitrification Methods 0.000 description 4
- 238000001125 extrusion Methods 0.000 description 3
- 239000002861 polymer material Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 230000005489 elastic deformation Effects 0.000 description 2
- 238000003698 laser cutting Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000011265 semifinished product Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Processing And Handling Of Plastics And Other Materials For Molding In General (AREA)
Abstract
Description
Claims (4)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811330785 | 2018-11-09 | ||
CN2018113307853 | 2018-11-09 | ||
CN201910128805.7A CN109887864A (zh) | 2019-02-21 | 2019-02-21 | 一种具有玻璃化转变温度的模材的分离方法 |
CN2019101288057 | 2019-02-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN111180355A CN111180355A (zh) | 2020-05-19 |
CN111180355B true CN111180355B (zh) | 2022-12-06 |
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CN201910470179.XA Active CN111180355B (zh) | 2018-11-09 | 2019-05-31 | 一种具有玻璃化转变温度的模材的分离方法 |
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CN (1) | CN111180355B (zh) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102224575A (zh) * | 2008-11-25 | 2011-10-19 | 日本电工株式会社 | 切割用表面保护带及切割用表面保护带的剥离去除方法 |
CN103887238A (zh) * | 2014-04-01 | 2014-06-25 | 惠州硕贝德无线科技股份有限公司 | 一种完成bga封装之后的晶圆的切割分粒方法 |
CN104946153A (zh) * | 2014-03-31 | 2015-09-30 | 日东电工株式会社 | 热固型芯片接合薄膜、切割/芯片接合薄膜及半导体装置的制造方法 |
JP2018147988A (ja) * | 2017-03-03 | 2018-09-20 | 積水化学工業株式会社 | 半導体チップの製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2609254B2 (ja) * | 1987-08-29 | 1997-05-14 | ソニー株式会社 | 高弾性率ポリエチレンの加工方法 |
JPH0696235B2 (ja) * | 1988-11-30 | 1994-11-30 | 橋本フォーミング工業株式会社 | モールディングの製造方法 |
TW200603970A (en) * | 2004-03-23 | 2006-02-01 | Fuji Photo Film Co Ltd | Method of cutting polymer film |
CN103794685A (zh) * | 2012-10-29 | 2014-05-14 | 马阁华 | 一种led扩膜工艺 |
CN104752582A (zh) * | 2013-12-31 | 2015-07-01 | 展晶科技(深圳)有限公司 | 发光二极管封装方法 |
CN106952845A (zh) * | 2017-01-23 | 2017-07-14 | 苏州五方光电材料有限公司 | 一种扩膜机及利用该扩膜机进行激光切割的工艺 |
CN107972079A (zh) * | 2017-12-15 | 2018-05-01 | 防城港市金沙海洋科技有限责任公司 | 一种橡胶切割装置 |
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2019
- 2019-05-31 CN CN201910470179.XA patent/CN111180355B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102224575A (zh) * | 2008-11-25 | 2011-10-19 | 日本电工株式会社 | 切割用表面保护带及切割用表面保护带的剥离去除方法 |
CN104946153A (zh) * | 2014-03-31 | 2015-09-30 | 日东电工株式会社 | 热固型芯片接合薄膜、切割/芯片接合薄膜及半导体装置的制造方法 |
CN103887238A (zh) * | 2014-04-01 | 2014-06-25 | 惠州硕贝德无线科技股份有限公司 | 一种完成bga封装之后的晶圆的切割分粒方法 |
JP2018147988A (ja) * | 2017-03-03 | 2018-09-20 | 積水化学工業株式会社 | 半導体チップの製造方法 |
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Effective date of registration: 20240318 Address after: 528225, Room A206, Building A, Nanhai Industrial Think Tank City Phase I, Taoyuan Road, Software Park, Shishan Town, Nanhai District, Foshan City, Guangdong Province (Residence Declaration) Patentee after: Foshan xinweilai Photoelectric Technology Co.,Ltd. Country or region after: China Address before: 226500 group 34, Yuhua village, Taoyuan Town, Rugao City, Nantong City, Jiangsu Province Patentee before: DURA-CHIP (NANTONG) Ltd. Country or region before: China |