WO2012067085A1 - 成膜装置 - Google Patents
成膜装置 Download PDFInfo
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- WO2012067085A1 WO2012067085A1 PCT/JP2011/076243 JP2011076243W WO2012067085A1 WO 2012067085 A1 WO2012067085 A1 WO 2012067085A1 JP 2011076243 W JP2011076243 W JP 2011076243W WO 2012067085 A1 WO2012067085 A1 WO 2012067085A1
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- WO
- WIPO (PCT)
- Prior art keywords
- carrier
- chamber
- film
- moving mechanism
- forming apparatus
- Prior art date
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- 230000007246 mechanism Effects 0.000 claims abstract description 72
- 239000000758 substrate Substances 0.000 claims abstract description 62
- 238000002360 preparation method Methods 0.000 claims description 57
- 230000015572 biosynthetic process Effects 0.000 claims description 27
- 238000010438 heat treatment Methods 0.000 claims description 8
- 239000012528 membrane Substances 0.000 claims 1
- 230000032258 transport Effects 0.000 description 38
- 238000005192 partition Methods 0.000 description 18
- 238000000605 extraction Methods 0.000 description 17
- 239000000969 carrier Substances 0.000 description 13
- 230000008602 contraction Effects 0.000 description 5
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
Definitions
- the present invention relates to a film forming apparatus, and more particularly, to a structure of a charging / unloading chamber constituting the film forming apparatus.
- a film formation apparatus for forming a functional film on a semiconductor substrate or the like a PVD (Physical Vapor Deposition) apparatus, a CVD (Chemical Vapor Deposition) apparatus, or the like can be given.
- a film forming apparatus represented by such a PVD apparatus or a CVD apparatus has a film forming chamber for forming a film on a substrate, and charging / removal connected to the film forming chamber via an airtight partition valve (opening / closing part). And at least a chamber (load / unload chamber).
- the preparation / removal chamber for example, prepares the substrate from the space (one side surface) that is an atmospheric pressure atmosphere into the preparation / removal chamber, depressurizes the inside of the chamber, and then communicates with the film formation chamber that is the reduced pressure atmosphere.
- the partition valve formed on the side surface is opened, and the substrate charged in the chamber is sent into the film forming chamber.
- the loading / unloading chamber takes out the substrate on which the functional film has been formed in the film forming chamber in a reduced-pressure atmosphere and transports the substrate to the loading / unloading chamber (inside the chamber) through the other side surface. After that, the film-formed substrate is sent out from one side surface.
- the loading / unloading chamber takes in and out the substrate between the film forming chamber in which the inside is a reduced pressure atmosphere and the outside of the film forming apparatus in which the atmospheric pressure atmosphere is maintained while keeping the inside of the film forming chamber in a reduced pressure atmosphere. It is a delivery chamber used for this purpose.
- Such a loading / unloading chamber is conventionally equipped with a horizontal carrier (vertical carrier) that is held in a state where one surface of the substrate stands in the vertical direction in order to efficiently load and remove a plurality of substrates.
- a transport mechanism for transporting along the direction was provided (for example, see Patent Documents 1 and 2).
- the substrate on which film formation is to be performed (pre-deposition substrate) is loaded into the loading / unloading chamber, then the inside of the loading / unloading chamber (inside the chamber) is decompressed, and the substrate is placed horizontally. The position is moved to one position in the direction and retracted from a position (conveyance position) connected to the film formation chamber. Then, the substrate on which the film has been formed moves from the film formation chamber having a reduced pressure atmosphere to the preparation / removal chamber, and the substrate on which the film has been formed moves to the other position in the horizontal direction.
- the substrate on which film formation is to be performed is moved to a transfer position connected to the film formation chamber, and the substrate is introduced into the film formation chamber. Then, after the film-formed substrate is moved again to the transfer position, the inside of the chamber, which is the loading / unloading chamber, is returned from the reduced-pressure atmosphere to the atmospheric pressure atmosphere, and then the deposited substrate is placed outside the loading / unloading chamber. Take out.
- the present invention has been made in view of the above problems, and is a film forming apparatus provided with a loading / unloading chamber that has excellent loading / unloading efficiency, can be easily downsized, and can be manufactured at a low cost with a simple configuration.
- the purpose is to provide.
- the film forming apparatus of the present invention communicates with the film forming chamber, the film forming chamber for forming a film on the substrate, the carrier for vertically holding the substrate so that one surface of the substrate is along the vertical direction, and the film forming chamber.
- the carrier is moved between a loading / unloading chamber disposed via an opening / closing section and a transport position where the carrier can be inserted / removed between the film forming chamber and a retracted position adjacent to the transport position.
- a moving mechanism provided in the preparation / removal chamber for moving the carrier up and down in an oblique direction at a predetermined angle greater than 0 ° and less than 90 ° with respect to the vertical and horizontal directions.
- the moving mechanism linearly moves the carrier up and down along the oblique direction between the conveyance position and the retracted position that is located obliquely above the conveyance position.
- the movement mechanism includes a first movement mechanism that moves the carrier between the conveyance position and a first retraction position that is located obliquely above the conveyance position, and the conveyance position. It is preferable to have a second moving mechanism for moving the carrier between the second retracted position located obliquely above the other with respect to the transport position.
- the first moving mechanism and the second moving mechanism are each provided with a telescopic member that supports and moves the carrier, and the telescopic member of the first moving mechanism and the telescopic member of the second moving mechanism.
- the members are preferably arranged so as to cross each other.
- the moving mechanism preferably moves the carrier up and down in an oblique direction at an angle of 45 ° to 85 ° with respect to the horizontal direction. It is preferable that the film forming apparatus of the present invention further includes a heating unit that is provided at a position close to the retraction position of the preparation / removal chamber and that heats the substrate.
- the moving mechanism further includes a third moving mechanism for moving the carrier along the vertical direction.
- the carrier is moved in an oblique direction (that is, the vertical direction and the horizontal direction) forming a predetermined angle with respect to the vertical direction and the horizontal direction in the preparation / removal chamber.
- the carrier is linearly moved up and down along the oblique direction between the retreat position located obliquely above the transport position and the transport position.
- the film forming apparatus can be downsized as compared with the conventional case where the carrier is retracted in parallel with the transport position along the horizontal direction.
- the movement distance of the carrier in the horizontal direction can be reduced by shifting the carrier in the vertical direction.
- each angle is greater than 0 ° and less than 90 ° with respect to the vertical direction and the horizontal direction. Just lift it diagonally. For this reason, the movement which produces mechanical friction and contact, such as the rail laid along the horizontal direction, and the wheel engaged with this like the past, can be reduced. Therefore, the generation of particles in the preparation / removal chamber can be suppressed, and the substrate surface and the inside of the preparation / removal chamber can be maintained in a clean state.
- FIG. 1 is a schematic diagram showing an entire inter-back PVD apparatus (hereinafter simply referred to as a film forming apparatus) as an embodiment of the film forming apparatus of the present invention.
- a film forming chamber (film forming chamber) 11 a film forming chamber
- a loading / unloading chamber (load / unload chamber) 12 and a stacker (transfer device) 13 are installed in series.
- the film formation chamber 11 and the preparation / removal chamber 12 communicate with each other by opening a partition valve described below.
- the preparation / removal chamber 12 and the stacker 13 communicate with each other by opening a partition valve.
- the carrier 14 on which the substrate W is placed can move between the film forming chamber 11, the loading / unloading chamber 12, and the stacker 13.
- a partition valve 16 is formed between the film forming chamber 11 and the charging / removing chamber 12 to keep the space between the film forming chamber 11 and the charging / removing chamber 12 airtight.
- a partition valve 17 is also formed between the preparation / removal chamber 12 and the stacker 13 to keep the space between the preparation / removal chamber 12 and the stacker 13 airtight. These partition valves 16 and 17 are opened when the carrier 14 moves, and are closed when the carrier 14 does not move.
- the film forming chamber (film forming chamber) 11 includes a chamber body 21 capable of keeping the inside airtight.
- a heating device 22 and a cathode unit 23 are provided in the chamber body 21.
- An opening 24 through which the carrier 14 on which the substrate W is mounted is formed on one surface (one side surface) of the chamber main body 21, and the loading / unloading chamber 12 can communicate with the side surface via the partition valve 16. It is connected.
- the inside of the chamber body 21 can be depressurized by a vacuum pump (not shown).
- the cathode unit 23 is formed so as to face one surface (one substrate surface) of the substrate W introduced into the chamber body 21, and forms a functional film on one surface of the substrate W by sputtering the target.
- the heating device 22 heats the substrate W introduced into the chamber body 21 to a temperature optimum for film formation.
- a sheath heater or an infrared heater is used as such a heating device 22.
- the stacker 13 is formed so as to be able to accommodate a plurality of carriers 14, for example, and is connected to the preparation / removal chamber 12 via a partition valve (opening / closing part) 17.
- a partition valve opening / closing part
- the substrate before film formation is temporarily placed, and the substrate is relayed when the substrate on which film formation has been performed is sent out to an apparatus for performing another process.
- the inside of the stacker 13 may be maintained in an atmospheric pressure atmosphere.
- FIG. 2 is a cross-sectional view of the preparation / removal chamber constituting the film forming apparatus as viewed from above.
- FIG. 3 is a cross-sectional view of the preparation / removal chamber as viewed from the stacker.
- the loading / unloading chamber (load / unload chamber) 12 includes a chamber body 31 capable of maintaining the internal space in an airtight state. On the front side (front position) of the chamber main body 31, an opening 32 that allows the film formation chamber (deposition chamber) 11 to communicate with the chamber main body 31 is formed. At this front position, the film forming chamber 11 and the chamber body 31 are connected via the partition valve 16.
- an opening 33 that allows the stacker (transfer device) 13 and the chamber body 31 to communicate with each other is formed on the back side (back position) of the chamber body 31. At this rear position, the stacker 13 and the chamber body 31 are connected via the partition valve 17.
- a heater (heating unit) 34 is formed on one side surface 31 a (first side surface) of the chamber body 31.
- the heater (heating unit) 34 is a device that heats the substrate W located at a retracted position to be described later.
- a sheath heater or an infrared heater is used.
- a vacuum pump 35 is provided on the other side surface 31 b (second side surface opposite to the first side surface) of the chamber body 31. The vacuum pump 35 evacuates the gas in the chamber body 31 in a state where the partition valves 16 and 17 are closed, and decompresses the chamber body 31 to make the chamber body 31 in a vacuum state.
- the carrier 14 that is taken in and out of the loading / unloading chamber 12 is a so-called vertical carrier that holds the substrate W vertically such that one surface Wa of the substrate W is along the vertical direction G.
- the carrier 14 holds, for example, an edge portion of the substrate W such as a silicon wafer, and holds the substrate W in a state in which the substrate W stands substantially vertically.
- a moving mechanism 40 and a transport rail 36 are formed at a position near the bottom surface 31c of the chamber body 31. Moreover, the moving mechanism 40 is provided in the lower part of the chamber main body 31 (preparation / extraction chamber 12) so that the wall part which comprises the bottom face 31c may be penetrated.
- the transfer rail 36 is formed so as to extend between the opening 32 connected to the film forming chamber 11 of the chamber body 31 and the opening 33 connected to the stacker 13.
- the carrier 14 holding the substrate W moves on the transport rail 36.
- a rotating mechanism (not shown) composed of a transport roller that moves the carrier 14 is appropriately disposed in the middle of the transport rail 36.
- the moving mechanism 40 includes a first moving mechanism 41, a second moving mechanism 42, and a third moving mechanism 43.
- the first moving mechanism 41, the second moving mechanism 42, and the third moving mechanism 43 are each composed of, for example, a hydraulic cylinder or an air cylinder provided with extendable elastic members 41 a, 42 a, 43 a. Yes.
- the first moving mechanism 41 has an oblique direction (that is, a vertical direction and a horizontal direction) in which the extending direction of the expansion and contraction member 41a forms a predetermined angle with respect to the vertical direction G and the horizontal direction F, which is greater than 0 ° and smaller than 90 °, respectively. It is arrange
- the first elastic mechanism 41a of the first moving mechanism 41 has an angle of 45 ° or more and 85 ° or less with respect to the horizontal direction F, for example, 60 ° in the present embodiment. Has been placed.
- the second moving mechanism 42 is arranged so that the extending direction of the elastic member 42a extends along an oblique direction that forms a predetermined angle greater than 0 ° and smaller than 90 ° with respect to the vertical direction G and the horizontal direction F, respectively. Yes.
- the second moving mechanism 42 is arranged so that the elastic member 42a and the elastic member 41a of the first moving mechanism 41 intersect each other.
- the elastic member 42a of the second moving mechanism 42 has an angle of 45 ° or more and 85 ° or less in the opposite direction to the elastic member 41a of the first moving mechanism 41 with respect to the horizontal direction F.
- the second moving mechanism 42 is arranged so as to be 60 °.
- the telescopic member 41a of the first moving mechanism 41 and the telescopic member 42a of the second moving mechanism 42 arranged so as to cross each other are in the depth direction of the chamber body 31 (extension direction of the transport rail 36). What is necessary is just to arrange
- Support portions 41b and 42b for supporting the carrier 14 are formed at the distal end portion of the telescopic member 41a of the first moving mechanism 41 and the distal end portion of the telescopic member 42a of the second moving mechanism 42, respectively.
- the support portions 41b and 42b for example, a member that constitutes an extension portion of the transport rail 36 in which the carrier 14 can be disposed in a portion (a concave portion or a notch portion) in which a portion of the transport rail 36 is cut out. Is adopted.
- the support portions 41 b and 42 b support both end portions of the carrier 14.
- the third moving mechanism 43 is arranged so that the extending direction of the elastic member 43a extends along the vertical direction G.
- the third moving mechanism 43 lifts the carrier 14 from the transport rail 36 and stops the movement of the carrier 14.
- FIGS. 2 and 4A to 6D are cross-sectional views showing the operation of the preparation / removal chamber constituting the film forming apparatus of the present invention step by step.
- a series of operations of taking out the substrate before film formation from the carrier 14 and sending it to the film formation chamber 11 and taking out the film-formed substrate from the film formation chamber 11 and sending it to the carrier 14 will be described.
- the partition valve 16 provided between the film forming chamber 11 and the charging / unloading chamber 12 is closed, the partition valve 17 is opened, and the charging / unloading chamber 12 and the stacker 13 are communicated with each other.
- the atmosphere inside the preparation / removal chamber 12 is the same atmospheric pressure atmosphere as the inside of the stacker 13.
- the carrier 14A supporting the substrate W1 before film formation is mounted on the transport rail 36, and the carrier 14A is introduced from the stacker 13 into the loading / unloading chamber 12 (see FIG. 4A).
- the third moving mechanism 43 is operated, and the telescopic member 43a extends upward along the vertical direction G.
- the carrier 14A is lifted (separated) from the transport rail 36, and the movement of the carrier 14A is stopped (see FIG. 4B).
- the second moving mechanism 42 is operated to extend the expansion / contraction member 42a obliquely upward at a predetermined angle larger than 0 ° and smaller than 90 ° with respect to the vertical direction G and the horizontal direction F, respectively.
- the carrier 14A located at the transport position P0 is placed on the support portion 42b formed at the distal end portion of the elastic member 42a.
- the carrier 14A moves linearly along an oblique direction (that is, a vertical direction and a horizontal direction).
- the carrier 14A moves from the transport position P0 to the first retraction position P1 located in one diagonally upward direction (first movement direction) (see FIG. 4C).
- the first retreat position P1 is a position close to the heater 34 inside the chamber body 31 (the preparation / removal chamber 12).
- the vacuum pump 35 is operated, and the inside of the preparation / removal chamber 12 is depressurized so as to be in a vacuum state similar to the inside of the film forming chamber 11.
- the partition valve 16 is opened to allow the preparation / removal chamber 12 to communicate with the film forming chamber 11
- the carrier 14B on which the substrate W2 that has been deposited and is disposed in the film forming chamber 11 is placed. Is placed on the transfer rail 36, and the carrier 14B is introduced into the preparation / removal chamber 12 (see FIG. 4D).
- the third moving mechanism 43 is operated, and the telescopic member 43a extends upward along the vertical direction G.
- the carrier 14B is lifted (separated) from the transport rail 36, and the movement of the carrier 14B is stopped (see FIG. 5A).
- the height of the carrier 14A located at the first retracted position P1 is located at the transport position P0. It is different from the height of the carrier 14B. In the horizontal direction F, the position of the carrier 14A and the position of the carrier 14B are different. In this way, by changing the height and position of the carrier 14A and the carrier 14B, the edge portion of the carrier 14B located at the transport position P0 in the vertical direction G and the edge portion of the carrier 14A partially overlap each other. Even if it exists, carrier 14A, 14B does not interfere with each other (contact).
- the substrate W1 placed on the carrier 14A located at the first retreat position P1 is preheated to a predetermined film formation temperature by the heater (heating unit) 34 before being introduced into the film formation chamber 11. It is preferable to keep it. Thus, after the substrate W1 is introduced into the film forming chamber 11, the time for raising the temperature to a predetermined film forming temperature can be eliminated, and the film can be formed more efficiently and in a short time.
- the first moving mechanism 41 is operated, and the expansion / contraction member 41a is inclined at a predetermined angle with respect to the vertical direction G and the horizontal direction F, that is, in a direction symmetric with respect to the vertical axis with respect to the expansion / contraction member 42a. Stretch upward.
- the carrier 14B positioned at the transport position P0 is placed on the support portion 41b formed at the tip portion of the elastic member 41a.
- the carrier 14B moves linearly along the oblique direction.
- the carrier 14B moves from the transport position P0 to the second retreat position P2 located in the other diagonally upward direction (second movement direction) (see FIG. 5B).
- the second retreat position P2 is a position away from the heater 34 inside the chamber body 31 (the preparation / removal chamber 12), and is a position opposite to the first retraction position P1.
- the second moving mechanism 42 is operated again, and the elastic member 42a is contracted obliquely downward at a predetermined angle with respect to the vertical direction G and the horizontal direction F.
- the carrier 14A located at the first retracted position P1 moves linearly along the oblique direction and is returned to the transport position P0 (see FIG. 5C).
- the third moving mechanism 43 is in a state in which the expansion / contraction member 43a extends upward along the vertical direction G, and therefore the carrier 14A is held in a state of being separated from the transport rail 36.
- the carrier 14A When the carrier 14A reaches the transport position P0, the third moving mechanism 43 is operated, and the telescopic member 43a is contracted downward along the vertical direction G, thereby placing the carrier 14A on the transport rail 36 (FIG. 5D). reference). Then, the carrier 14A is fed into the film forming chamber 11 along the transport rail 36 (see FIG. 6A).
- the substrate W1 that has been heated up to a predetermined film formation temperature by the heater 34 in advance is introduced into the film formation chamber 11, and then a film formation process is performed quickly.
- the partition valve 16 is closed, and the inside of the preparation / removal chamber 12 is returned to the atmospheric pressure atmosphere. Then, the closed partition valve 16 is opened to communicate with the stacker 13 in the atmospheric pressure atmosphere.
- the first moving mechanism 41 is operated again, and the elastic member 41a is contracted obliquely downward at a predetermined angle with respect to the vertical direction G and the horizontal direction F.
- the carrier 14B located at the second retreat position P2 moves linearly along the oblique direction and is returned to the transport position P0 (see FIG. 6B).
- the third moving mechanism 43 is held in a state where the carrier 14B is separated from the transport rail 36 because the telescopic member 43a is in the state of extending upward along the vertical direction G.
- the carrier 14B reaches the transport position P0, the third moving mechanism 43 is operated, and the telescopic member 43a is contracted downward along the vertical direction G, so that the carrier 14B is placed on the transport rail 36. (See FIG. 6C). Then, the carrier 14B is sent out to the stacker 13 along the transport rail 36 (see FIG. 6D). As a result, the film-formed substrate W2 is taken out to the stacker 13, and one step of efficiently exchanging the substrate W1 before film formation and the substrate W2 after film formation through the preparation / removal chamber 12 is completed. To do.
- the structure including the first moving mechanism and the second moving mechanism as the moving mechanism for moving the carrier in the oblique direction has been described.
- the structure including any one of the moving mechanisms. May be adopted.
- the structure including the third moving mechanism that moves the carrier in the vertical direction has been described.
- the third moving mechanism may not be particularly provided.
- the carrier 14 is moved in an oblique direction that forms a predetermined angle larger than 0 ° and smaller than 90 ° with respect to the vertical direction and the horizontal direction.
- the carrier 14 is linearly moved up and down along the oblique direction between the retreat positions P1 and P2 located obliquely above the transport position P0 and the transport position P0.
- the film forming apparatus 10 can be reduced in size as compared with the conventional case where the carrier is retracted in parallel with the transport position along the horizontal direction F.
- the width of a conventional charging / unloading chamber capable of paralleling three carriers in the horizontal direction was 565 mm.
- two carriers are inclined at a predetermined angle in the vertical direction and the horizontal direction, that is, charging / removal capable of retracting the carrier along the diagonally upward direction
- the chamber width was 305 mm. That is, in the film forming apparatus of the present invention, since the overlapping of carriers in the horizontal direction can be omitted, the width of the preparation / extraction chamber can be reduced to about half of the conventional one.
- the carrier when the carrier is retreated to a predetermined position in the preparation / removal chamber, it is only lifted in the vertical direction and the horizontal direction, that is, in the oblique direction. For this reason, the movement which produces mechanical friction and contact, such as the rail laid along the horizontal direction, and the wheel engaged with this like the past, can be reduced. Therefore, the generation of particles in the preparation / removal chamber can be suppressed, and the substrate surface and the inside of the preparation / removal chamber can be maintained in a clean state.
- the present invention can be applied to a film forming apparatus having a preparation / extraction chamber.
- SYMBOLS 10 ... Film-forming apparatus, 11 ... Film-forming chamber (film-forming chamber), 12 ... Loading / unloading chamber (load / unload chamber), 13 ... Stacker (transfer device), 14 ... Carrier, 40 ... Moving mechanism, 41 ... 1st movement mechanism, 42 ... 1st movement mechanism, P0 ... Movement position, P1 ... 1st evacuation position, P2 ... 2nd evacuation position.
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Abstract
Description
本願は、2010年11月15日に出願された特願2010-255191号に基づき優先権を主張し、その内容をここに援用する。
こうしたPVD装置やCVD装置などに代表される成膜装置は、基板に対して成膜を行う成膜室と、気密性を有する仕切りバルブ(開閉部)を介して成膜室に繋がる仕込・取出室(ロード・アンロードチャンバ)とを少なくとも備えている。
即ち、仕込・取出室は、内部が減圧雰囲気である成膜室と、大気圧雰囲気である成膜装置の外部との間で、成膜室の内部を減圧雰囲気に保ったまま基板を出し入れするために用いられる受け渡しチャンバである。
更に、こうした水平方向に延びるレールやギアなどの機械的な動きを伴う部品から発生するパーティクルによって、仕込・取出室の内部が汚染し、基板が仕込・取出室を通過する際における基板の表面が汚染するといった懸念もある。
即ち、本発明の成膜装置は、基板に被膜を形成する成膜室と、前記基板の一面が鉛直方向に沿うように前記基板を垂直保持するキャリアと、前記成膜室と連通するように開閉部を介して配置された仕込・取出室と、前記成膜室との間で前記キャリアを挿脱可能な搬送位置と、前記搬送位置に隣接した退避位置との間で前記キャリアを移動させ、前記キャリアを鉛直方向及び水平方向に対してそれぞれ0°より大きく90°より小さい所定の角度を成す斜め方向に上下動させ、前記仕込・取出室内に設けられた移動機構とを含む。
本発明の成膜装置は、前記仕込・取出室の前記退避位置に近い位置に設けられ、前記基板を加熱する加熱部を更に備えることが好ましい。
本実施形態の成膜装置10においては、成膜室(成膜チャンバ)11と、仕込・取出室(ロード・アンロードチャンバ)12と、スタッカ(移載装置)13とが、直列に設置されている。成膜室11及び仕込・取出室12は、以下に述べる仕切りバルブが開口することによって連通する。また、仕込・取出室12及びスタッカ13は、同様に、仕切りバルブが開口することによって連通する。また、基板Wが載置されたキャリア14は、成膜室11,仕込・取出室12,及びスタッカ13の間を互いに移動可能である。
チャンバ本体21の一面(一つの側面)には、基板Wが搭載されたキャリア14が通過可能な開口24が形成され、この側面には仕切りバルブ16を介して仕込・取出室12が連通可能に接続されている。こうしたチャンバ本体21の内部においては、真空ポンプ(図示略)によって減圧することが可能である。
加熱装置22は、チャンバ本体21に導入された基板Wを、成膜に最適な温度まで加熱する。こうした加熱装置22としては、例えば、シースヒータ、赤外線ヒータが用いられる。
仕込・取出室(ロード・アンロードチャンバ)12は、内部空間を気密状態に維持することができるチャンバ本体31を備えている。チャンバ本体31の正面側(正面位置)には、成膜室(成膜チャンバ)11とチャンバ本体31とを連通させる開口32が形成されている。この正面位置において、仕切りバルブ16を介して成膜室11とチャンバ本体31とが接続されている。また、チャンバ本体31の背面側(背面位置)には、スタッカ(移載装置)13とチャンバ本体31とを連通させる開口33が形成されている。この背面位置において、仕切りバルブ17を介してスタッカ13とチャンバ本体31とが接続されている。
また、チャンバ本体31の他方の側面31b(第1側面とは反対の第2側面)には、真空ポンプ35が設けられている。真空ポンプ35は、仕切りバルブ16,17が閉鎖された状態でチャンバ本体31内のガスを排気し、チャンバ本体31を減圧することによって、チャンバ本体31内を真空状態にする。
この支持部41b、42bとしては、例えば、搬送レール36の一部が切り欠いた部分(凹部、切り欠き部)に、キャリア14を配置させることが可能な、搬送レール36の延長部を成す部材が採用される。支持部41b、42bは、キャリア14の両端部分を支持する。
なお、以下の説明では、キャリア14から成膜前の基板を取り出して成膜室11に送り込むと共に、成膜室11から成膜済みの基板を取り出してキャリア14に送り込む一連の動作を説明する。
また、上述した実施形態では、キャリアを鉛直方向に移動させる第三の移動機構を備えた構造について説明したが、上述した移動機構とは別な装置として、キャリアを停止させる装置を設けることによって、第三の移動機構を特に備えていなくてもよい。
Claims (7)
- 成膜装置であって、
基板に被膜を形成する成膜室と、
前記基板の一面が鉛直方向に沿うように前記基板を垂直保持するキャリアと、
前記成膜室と連通するように開閉部を介して配置された仕込・取出室と、
前記成膜室との間で前記キャリアを挿脱可能な搬送位置と、前記搬送位置に隣接した退避位置との間で前記キャリアを移動させ、前記キャリアを鉛直方向及び水平方向に対してそれぞれ0°より大きく90°より小さい所定の角度を成す斜め方向に上下動させ、前記仕込・取出室内に設けられた移動機構と、
を含むことを特徴とする成膜装置。 - 請求項1記載の成膜装置であって、
前記移動機構は、前記搬送位置と、前記搬送位置に対して斜め上方に位置する前記退避位置との間で、前記キャリアを前記斜め方向に沿って直線的に上下動させる
ことを特徴とする成膜装置。 - 請求項1記載の成膜装置であって、
前記移動機構は、
前記搬送位置と、前記搬送位置に対して一方の斜め上方に位置する第一の退避位置との間で、前記キャリアを移動させる第一の移動機構と、
前記搬送位置と、前記搬送位置に対して他方の斜め上方に位置する第二の退避位置との間で、前記キャリアを移動させる第二の移動機構と、を有する
ことを特徴とする成膜装置。 - 請求項3記載の成膜装置であって、
前記第一の移動機構と前記第二の移動機構には、前記キャリアを支持して移動させる伸縮部材がそれぞれ備えられ、前記第一の移動機構の伸縮部材と、前記第二の移動機構の伸縮部材とは、互いに交差するように配置されている
ことを特徴とする成膜装置。 - 請求項1から請求項4のいずれか一項に記載の成膜装置であって、
前記移動機構は、水平方向に対して45°以上、85°以下の角度で前記キャリアを斜め方向に上下動させる
ことを特徴とする成膜装置。 - 請求項1から請求項5のいずれか一項に記載の成膜装置であって、
前記仕込・取出室の前記退避位置に近い位置に設けられ、前記基板を加熱する加熱部を更に備える
ことを特徴とする成膜装置。 - 請求項1から請求項6のいずれか一項に記載の成膜装置であって、
前記移動機構は、前記キャリアを鉛直方向に沿って移動させる第三の移動機構を更に備える
ことを特徴とする成膜装置。
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JPH0669316A (ja) * | 1992-06-15 | 1994-03-11 | Nissin Electric Co Ltd | 基板処理装置 |
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WO2010038272A1 (ja) * | 2008-09-30 | 2010-04-08 | キヤノンアネルバ株式会社 | 基板ホルダー保持装置及び基板ホルダー収納チャンバ |
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JPH0669316A (ja) * | 1992-06-15 | 1994-03-11 | Nissin Electric Co Ltd | 基板処理装置 |
JP2004018134A (ja) * | 2002-06-12 | 2004-01-22 | Nippei Toyama Corp | 薄板の移載搬送装置、それに用いられるカセット及び薄板の移載搬送方法 |
WO2010038272A1 (ja) * | 2008-09-30 | 2010-04-08 | キヤノンアネルバ株式会社 | 基板ホルダー保持装置及び基板ホルダー収納チャンバ |
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