WO2012064046A3 - Appareil pour la fabrication de poudre fine de silicium de pureté élevée - Google Patents

Appareil pour la fabrication de poudre fine de silicium de pureté élevée Download PDF

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Publication number
WO2012064046A3
WO2012064046A3 PCT/KR2011/008341 KR2011008341W WO2012064046A3 WO 2012064046 A3 WO2012064046 A3 WO 2012064046A3 KR 2011008341 W KR2011008341 W KR 2011008341W WO 2012064046 A3 WO2012064046 A3 WO 2012064046A3
Authority
WO
WIPO (PCT)
Prior art keywords
zinc
silicon
gas
high purity
reactive gas
Prior art date
Application number
PCT/KR2011/008341
Other languages
English (en)
Korean (ko)
Other versions
WO2012064046A2 (fr
Inventor
시마무네타카유키
카토켄지
사카타토요아키
Original Assignee
타운마이닝 컴퍼니., 리미티드
씨.에스.라보레토리 인 테크놀로지 리미티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 타운마이닝 컴퍼니., 리미티드, 씨.에스.라보레토리 인 테크놀로지 리미티드 filed Critical 타운마이닝 컴퍼니., 리미티드
Priority to KR1020137012076A priority Critical patent/KR101525860B1/ko
Publication of WO2012064046A2 publication Critical patent/WO2012064046A2/fr
Publication of WO2012064046A3 publication Critical patent/WO2012064046A3/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/24—Stationary reactors without moving elements inside
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • C01B33/039—Purification by conversion of the silicon into a compound, optional purification of the compound, and reconversion into silicon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/0053—Details of the reactor
    • B01J19/006—Baffles
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D21/00—Separation of suspended solid particles from liquids by sedimentation
    • B01D21/01—Separation of suspended solid particles from liquids by sedimentation using flocculating agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2221/00—Applications of separation devices
    • B01D2221/14—Separation devices for workshops, car or semiconductor industry, e.g. for separating chips and other machining residues
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00049—Controlling or regulating processes
    • B01J2219/00051—Controlling the temperature
    • B01J2219/00159—Controlling the temperature controlling multiple zones along the direction of flow, e.g. pre-heating and after-cooling

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)

Abstract

La présente invention concerne un appareil pour la fabrication de fines particules de silicium de pureté élevée, et comprend : (1) un dispositif pour chauffer et évaporer du zinc métallique au-dessus du point d'ébullition du zinc et simultanément amener le gaz de zinc à plus de 1000oC par chauffage du gaz généré; (2) un dispositif pour amener du tétrachlorure de silicium liquide à partir des gaz de zinc; (3) un dispositif pour la génération d'un gaz réactif contenant des particules de silicium par réaction par agitation-mélange du gaz de zinc et du tétrachlorure de silicium liquide; (4) un dispositif pour la croissance par floculation des particules de silicium qui sont générées quand la température du gaz réactif est abaissée à moins de 1000oC; et (5) un dispositif pour récupérer les précipités pour la précipitation et la récupération du silicium à partir de la solution aqueuse par mise en contact d'une solution aqueuse de chlorure de zinc avec la substance gazeuse contenant le gaz réactif et les particules de silicium qui se sont dévéloppées.
PCT/KR2011/008341 2010-11-11 2011-11-03 Appareil pour la fabrication de poudre fine de silicium de pureté élevée WO2012064046A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020137012076A KR101525860B1 (ko) 2010-11-11 2011-11-03 고순도 실리콘 미세분말의 제조 장치

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010-265717 2010-11-11
JP2010265717A JP5533601B2 (ja) 2010-11-11 2010-11-11 高純度シリコン微粉末の製造装置

Publications (2)

Publication Number Publication Date
WO2012064046A2 WO2012064046A2 (fr) 2012-05-18
WO2012064046A3 true WO2012064046A3 (fr) 2012-07-19

Family

ID=46051381

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/008341 WO2012064046A2 (fr) 2010-11-11 2011-11-03 Appareil pour la fabrication de poudre fine de silicium de pureté élevée

Country Status (3)

Country Link
JP (1) JP5533601B2 (fr)
KR (1) KR101525860B1 (fr)
WO (1) WO2012064046A2 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101640286B1 (ko) * 2013-08-14 2016-07-15 주식회사 엘지화학 스트리머 방전을 이용한 폴리실리콘의 제조 장치 및 제조 방법
KR102280508B1 (ko) 2014-06-11 2021-07-21 닛신 가세이 가부시키가이샤 리튬이온 전지의 음극 재료, 리튬이온 전지, 리튬이온 전지의 음극 또는 음극 재료의 제조방법 및 그 제조장치
JP6300096B2 (ja) * 2014-06-30 2018-04-11 ティーエムシー株式会社 シリコン微細粒子
JPWO2017183487A1 (ja) 2016-04-21 2019-03-07 株式会社トクヤマ 金属粉末の製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004018370A (ja) * 2002-06-19 2004-01-22 Yutaka Kamaike シリコンの製造装置および方法
JP2004284935A (ja) * 2003-03-19 2004-10-14 Takayuki Shimamune シリコンの製造装置及び製造方法
JP2007077007A (ja) * 2005-08-19 2007-03-29 Sumitomo Chemical Co Ltd 珪素の製造方法
JP2007284259A (ja) * 2006-04-12 2007-11-01 Shin Etsu Chem Co Ltd シリコンの製造方法及び製造装置
JP2008037735A (ja) * 2006-08-02 2008-02-21 Kinotech Corp シリコン製造装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004210594A (ja) * 2002-12-27 2004-07-29 Takayuki Shimamune 高純度シリコンの製造方法
JP4428484B2 (ja) * 2007-07-03 2010-03-10 有限会社シーエス技術研究所 高純度シリコンの製造装置
JP4392675B1 (ja) * 2008-07-25 2010-01-06 有限会社シーエス技術研究所 高純度シリコンの製造装置
JP4630993B2 (ja) * 2008-08-31 2011-02-09 北京中晶華業科技有限公司 高純度シリコンの製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004018370A (ja) * 2002-06-19 2004-01-22 Yutaka Kamaike シリコンの製造装置および方法
JP2004284935A (ja) * 2003-03-19 2004-10-14 Takayuki Shimamune シリコンの製造装置及び製造方法
JP2007077007A (ja) * 2005-08-19 2007-03-29 Sumitomo Chemical Co Ltd 珪素の製造方法
JP2007284259A (ja) * 2006-04-12 2007-11-01 Shin Etsu Chem Co Ltd シリコンの製造方法及び製造装置
JP2008037735A (ja) * 2006-08-02 2008-02-21 Kinotech Corp シリコン製造装置

Also Published As

Publication number Publication date
JP5533601B2 (ja) 2014-06-25
WO2012064046A2 (fr) 2012-05-18
KR101525860B1 (ko) 2015-06-03
JP2012101998A (ja) 2012-05-31
KR20130100332A (ko) 2013-09-10

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