CN103454377B - 一种电子级三氯氢硅纯度评价方法 - Google Patents
一种电子级三氯氢硅纯度评价方法 Download PDFInfo
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- CN103454377B CN103454377B CN201210170915.8A CN201210170915A CN103454377B CN 103454377 B CN103454377 B CN 103454377B CN 201210170915 A CN201210170915 A CN 201210170915A CN 103454377 B CN103454377 B CN 103454377B
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- Prior art keywords
- cooling water
- bell jar
- reacting gas
- pipe
- trichlorosilane
- Prior art date
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- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 title claims abstract description 35
- 239000005052 trichlorosilane Substances 0.000 title claims abstract description 35
- 238000011156 evaluation Methods 0.000 title claims abstract description 11
- 239000000498 cooling water Substances 0.000 claims abstract description 44
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000007789 gas Substances 0.000 claims description 28
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 19
- 229910052739 hydrogen Inorganic materials 0.000 claims description 12
- 239000001257 hydrogen Substances 0.000 claims description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 10
- 229920005591 polysilicon Polymers 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 238000003556 assay Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 claims 1
- 238000005516 engineering process Methods 0.000 description 3
- WURBVZBTWMNKQT-UHFFFAOYSA-N 1-(4-chlorophenoxy)-3,3-dimethyl-1-(1,2,4-triazol-1-yl)butan-2-one Chemical compound C1=NC=NN1C(C(=O)C(C)(C)C)OC1=CC=C(Cl)C=C1 WURBVZBTWMNKQT-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 238000004817 gas chromatography Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002354 inductively-coupled plasma atomic emission spectroscopy Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000918 plasma mass spectrometry Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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- Silicon Compounds (AREA)
Abstract
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CN201210170915.8A CN103454377B (zh) | 2012-05-30 | 2012-05-30 | 一种电子级三氯氢硅纯度评价方法 |
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CN201210170915.8A CN103454377B (zh) | 2012-05-30 | 2012-05-30 | 一种电子级三氯氢硅纯度评价方法 |
Publications (2)
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CN103454377A CN103454377A (zh) | 2013-12-18 |
CN103454377B true CN103454377B (zh) | 2015-12-09 |
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CN201210170915.8A Active CN103454377B (zh) | 2012-05-30 | 2012-05-30 | 一种电子级三氯氢硅纯度评价方法 |
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Families Citing this family (1)
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CN107515274A (zh) * | 2016-06-15 | 2017-12-26 | 上海韵申新能源科技有限公司 | 一种多晶硅生产系统质量评价方法及装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1129315A (ja) * | 1997-05-12 | 1999-02-02 | Tokuyama Corp | ジクロロシラン含量の減少したトリクロロシランの製造方法 |
CN101706473A (zh) * | 2009-12-04 | 2010-05-12 | 北京有色金属研究总院 | 一种检测三氯氢硅纯度的方法及装置 |
CN201525754U (zh) * | 2009-09-04 | 2010-07-14 | 江苏中能硅业科技发展有限公司 | 多晶硅实验还原炉 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090165647A1 (en) * | 2007-12-31 | 2009-07-02 | Sarang Gadre | Effluent gas recovery process for silicon production |
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2012
- 2012-05-30 CN CN201210170915.8A patent/CN103454377B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1129315A (ja) * | 1997-05-12 | 1999-02-02 | Tokuyama Corp | ジクロロシラン含量の減少したトリクロロシランの製造方法 |
CN201525754U (zh) * | 2009-09-04 | 2010-07-14 | 江苏中能硅业科技发展有限公司 | 多晶硅实验还原炉 |
CN101706473A (zh) * | 2009-12-04 | 2010-05-12 | 北京有色金属研究总院 | 一种检测三氯氢硅纯度的方法及装置 |
Non-Patent Citations (1)
Title |
---|
峨眉半导体材料研究所第一研究室多晶组.高纯多晶硅的制取.《稀有金属》.1979,(第6期),第8-18页. * |
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Effective date of registration: 20210825 Address after: 810007 Xining Economic and Technological Development Zone Phase II, Dongchuan Industrial Park, Xining City, Qinghai Province Patentee after: Huanghe Hydropower Development Co., Ltd. Patentee after: Qinghai xince Technology Co.,Ltd. Address before: 810006 No. 20, Kunlun East Road, Chengdong Economic Development Zone, Xining City, Qinghai Province Patentee before: Huanghe Hydropower Development Co., Ltd. |
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Effective date of registration: 20240408 Address after: 810007 Xining Economic and Technological Development Zone Phase II, Dongchuan Industrial Park, Xining City, Qinghai Province Patentee after: Huanghe Hydropower Development Co., Ltd. Country or region after: China Patentee after: Qinghai xince Technology Co.,Ltd. Patentee after: HUANGHE HYDROPOWER DEVELOPMENT Co.,Ltd. Address before: 810007 Xining Economic and Technological Development Zone Phase II, Dongchuan Industrial Park, Xining City, Qinghai Province Patentee before: Huanghe Hydropower Development Co., Ltd. Country or region before: China Patentee before: Qinghai xince Technology Co.,Ltd. |
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