WO2012057499A3 - 정류특성 또는 오믹 접합층을 가지는 저항변화 메모리 - Google Patents

정류특성 또는 오믹 접합층을 가지는 저항변화 메모리 Download PDF

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Publication number
WO2012057499A3
WO2012057499A3 PCT/KR2011/007978 KR2011007978W WO2012057499A3 WO 2012057499 A3 WO2012057499 A3 WO 2012057499A3 KR 2011007978 W KR2011007978 W KR 2011007978W WO 2012057499 A3 WO2012057499 A3 WO 2012057499A3
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WIPO (PCT)
Prior art keywords
resistive
diode
ohmic contact
semiconductor layer
conductive filament
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PCT/KR2011/007978
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English (en)
French (fr)
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WO2012057499A2 (ko
Inventor
홍진표
배윤철
곽준식
이아람
Original Assignee
한양대학교 산학협력단
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Publication date
Priority claimed from KR1020100104600A external-priority patent/KR20120043343A/ko
Priority claimed from KR1020100132928A external-priority patent/KR101787751B1/ko
Application filed by 한양대학교 산학협력단 filed Critical 한양대학교 산학협력단
Priority to US13/881,584 priority Critical patent/US20130214235A1/en
Publication of WO2012057499A2 publication Critical patent/WO2012057499A2/ko
Publication of WO2012057499A3 publication Critical patent/WO2012057499A3/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8615—Hi-lo semiconductor devices, e.g. memory devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
    • H01L29/242—AIBVI or AIBVII compounds, e.g. Cu2O, Cu I
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)

Abstract

바이어스의 방향에 따른 정류특성과 저항변화특성을 동시에 가지는 저항변화 메모리가 개시된다. 상하부에 구비된 전극들 사이에 저항변화 다이오드가 개재된다. 저항변화 다이오드는 p형 저항변화 반도체층과 n형 저항변화 반도체층이 접합된 형태를 가진다. 저항변화 다이오드에 높은 역바이어스가 인가될 경우, 저항변화 다이오드는 전도성 필라멘트를 형성한다. 이후에 정바이어스의 인가시, 형성된 전도성 필라멘트의 일부가 파괴되는 리셋이 일어나고, 이를 통해 고저항 상태가 형성된다. 또한, 다시 역바이어스의 인가시 전도성 필라멘트가 재생성되는 셋 동작이 일어난다. 이를 통해 저저항 상태가 구현된다. 또한, 저항변화 반도체층과 오믹 접합을 달성하고, 쇼트키 베리어의 형성을 억제하기 위해 오믹 접합층이 저항변화 다이오드 상부에 형성된다. 이를 통해 각각의 메모리 셀이 낮은 판독전압 하에서도 정보의 오독 없이 정보판독을 가능하게 하며, 메모리 구조의 구동 전력을 감소시켜 대용량, 고밀도의 메모리 실현이 가능하며, 제조공정 상의 복잡함과 고비용을 회피할 수 있다.
PCT/KR2011/007978 2010-10-26 2011-10-25 정류특성 또는 오믹 접합층을 가지는 저항변화 메모리 WO2012057499A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/881,584 US20130214235A1 (en) 2010-10-26 2011-10-25 Resistive memory having rectifying characteristics or an ohmic contact layer

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR1020100104600A KR20120043343A (ko) 2010-10-26 2010-10-26 정류특성을 가지는 저항변화 메모리
KR10-2010-0104600 2010-10-26
KR1020100132928A KR101787751B1 (ko) 2010-12-22 2010-12-22 오믹 접합층을 가지는 저항변화 메모리
KR10-2010-0132928 2010-12-22

Publications (2)

Publication Number Publication Date
WO2012057499A2 WO2012057499A2 (ko) 2012-05-03
WO2012057499A3 true WO2012057499A3 (ko) 2012-07-12

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US (1) US20130214235A1 (ko)
WO (1) WO2012057499A2 (ko)

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WO2015034494A1 (en) * 2013-09-05 2015-03-12 Hewlett-Packard Development Company, L.P. Memristor structures
TWI512801B (zh) * 2013-09-13 2015-12-11 Richtek Technology Corp 歐姆接觸結構與具有該歐姆接觸結構之半導體元件
US10611161B2 (en) 2014-07-24 2020-04-07 Avision Inc. Image forming agent storage member and laser printer using the same
TWI559519B (zh) 2015-02-16 2016-11-21 國立清華大學 電阻式記憶體
US9735360B2 (en) * 2015-12-22 2017-08-15 Arm Ltd. Access devices to correlated electron switch
US10381558B1 (en) 2018-03-16 2019-08-13 4D-S, Ltd. Resistive memory device having a retention layer
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US20130214235A1 (en) 2013-08-22

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