WO2012036205A1 - パターン形成方法及びデバイス製造方法 - Google Patents
パターン形成方法及びデバイス製造方法 Download PDFInfo
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- WO2012036205A1 WO2012036205A1 PCT/JP2011/070986 JP2011070986W WO2012036205A1 WO 2012036205 A1 WO2012036205 A1 WO 2012036205A1 JP 2011070986 W JP2011070986 W JP 2011070986W WO 2012036205 A1 WO2012036205 A1 WO 2012036205A1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0338—Process specially adapted to improve the resolution of the mask
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76816—Aspects relating to the layout of the pattern or to the size of vias or trenches
Definitions
- the present invention relates to a pattern forming method for forming a pattern on a substrate and a device manufacturing method using the pattern forming method.
- the former pitch division method is roughly divided into a double exposure process and a double patterning process.
- images of the first and second mask patterns having a pitch twice as large as the device pattern to be finally formed are transferred to a non-linear resist with the phases shifted from each other, and then etching or the like is performed.
- a process such as etching is performed between the exposure of the image of the first mask pattern and the exposure of the image of the second mask pattern.
- spacer / double patterning method spacer process method
- spacer process method for example, a plurality of line patterns having a quarter of the pitch are formed by exposing and developing an image of a mask pattern having a pitch twice that of the device pattern. After the spacers are deposited on the space portions (side wall portions) on both sides, for example, each line pattern is removed to obtain a pattern with a pitch of 1/2 (see, for example, Non-Patent Document 3).
- an object of the present invention is to make it possible to form a pattern finer than the resolution limit of an exposure apparatus.
- a pattern forming method wherein a first pattern having a first line pattern is formed on a substrate, a first thin film is formed so as to cover the first pattern, and A second pattern having a second line pattern extending in a direction intersecting the first line pattern is formed on the first thin film, a photosensitive layer is formed to cover the second pattern, and at least the second pattern is formed.
- a third pattern having a first opening is formed in the photosensitive layer so as to partially overlap, and a part of the first thin film is formed through the first opening of the third pattern formed in the photosensitive layer. Removing, forming a second opening in the first thin film, removing a portion of the first pattern through the second opening of the first thin film, and removing the first thin film and the second pattern
- a patterning method for removal is provided.
- a pattern forming method wherein a first line-and-space pattern having a plurality of first lines and first spaces arranged alternately in a predetermined direction on a substrate is formed.
- Pattern forming method first part of line-and-space pattern forms a line and space pattern of aperiodic removed is provided.
- a device including a step of forming a pattern obtained by removing a part of a predetermined pattern on a substrate using the pattern forming method according to the first or second aspect of the present invention.
- a manufacturing method is provided.
- the device manufacturing method using the pattern formation method of the 1st or 2nd aspect of this invention is provided.
- a pattern finer than the resolution limit of the exposure apparatus can be formed.
- FIG. 2A is a block diagram showing a main part of a pattern forming system used in the embodiment
- FIG. 2B is a view showing a schematic configuration of an exposure apparatus 100 in FIG. It is an enlarged view which shows a part of circuit pattern of a certain layer of the electronic device manufactured in embodiment. It is a flowchart which shows the pattern formation method of 1st Embodiment.
- (A) is an enlarged plan view showing a part of the pattern of the first reticle
- (B) is an enlarged cross section showing the wafer W of the first embodiment in which the first intermediate layer and the photoresist layer are formed on the device layer.
- (C) is an enlarged sectional view showing the wafer after etching the first intermediate layer
- (D) is an enlarged sectional view showing the wafer W on which the first spacer layer is deposited
- (E) is the first spacer layer.
- (F) is an enlarged sectional view showing the wafer W after removing the pattern of the first intermediate layer
- (G) is a first L & S pattern (line) formed in the device layer (And space pattern) 71 is an enlarged plan view showing.
- FIG. 4D is an enlarged sectional view showing the wafer W after etching the second intermediate layer
- FIG. 4D is an enlarged sectional view showing the wafer W on which the second spacer layer is deposited
- FIG. 4E is the wafer W after etching the second spacer layer.
- F is an enlarged sectional view showing the wafer W after the removal of the pattern of the second intermediate layer
- G is an enlarged plane showing the second L & S pattern 78 formed in the processing pattern layer.
- FIG. 6A is an enlarged plan view showing a part of the wafer W on which the pattern image of the third reticle is exposed
- (B) is a cross-sectional view taken along the line BB ′ of FIG. 6 (A)
- FIG. 6D is an enlarged plan view showing a part of the pattern of the third reticle.
- (A) is an enlarged plan view showing a part of the developed wafer W
- (B) is a cross-sectional view taken along line BB ′ of FIG. 7 (A)
- (C) is taken along line CC ′ of FIG. 7 (A). It is sectional drawing which follows.
- FIG. 8 (A) is an enlarged plan view showing a part of the wafer W in which an opening is formed in the protective layer
- (B) is a cross-sectional view taken along line BB ′ of FIG. 8 (A)
- (C) is FIG. 8 (A).
- (A) is an enlarged plan view showing a part of the wafer W from which part of the L & S patterns 71 and 78 has been removed
- (B) is a sectional view taken along the line BB ′ of FIG. 9 (A)
- (C) is a diagram. It is sectional drawing which follows CC 'line
- FIG. 11A is an enlarged plan view showing a part of the wafer W after the removal of the second L & S pattern 78
- FIG. 11B is a cross-sectional view taken along line BB ′ in FIG. 11A
- FIG. 12 (A) is an enlarged plan view showing a part of the wafer W after the removal of the first protective layer
- (B) is a sectional view taken along the line BB ′ of FIG. 12 (A)
- (C) is FIG. 12 (A). It is sectional drawing which follows CC 'line.
- (A) is an enlarged plan view showing a part of the wafer W on which an image of another pattern of the third reticle is exposed
- (B) is a cross-sectional view taken along line BB ′ of FIG. 13 (A)
- FIG. 14 is a cross-sectional view taken along line CC ′ in FIG. 13A
- FIG. 14D is an enlarged plan view showing another pattern of the third reticle.
- (A) is an enlarged plan view showing a part of the wafer W from which the photoresist and a part of the protective layer have been removed following the state of FIG. 13 (A), and (B) is a BB ′ line in FIG. 14 (A).
- (C) is sectional drawing which follows CC 'line
- (A) is an enlarged plan view showing a part of the wafer W from which part of the L & S patterns 71 and 78 has been removed following the state of FIG. 14 (A), and (B) is a BB ′ line in FIG. 15 (A).
- (C) is sectional drawing which follows CC 'line
- FIG. 16C is a cross-sectional view taken along the line CC ′ of FIG. It is a flowchart which shows the pattern formation method of 2nd Embodiment.
- (A) is an enlarged plan view showing a part of the wafer W1 of the second embodiment on which an image of the pattern of the third reticle is exposed, and (B) is a sectional view taken along the line BB ′ of FIG. (C) is sectional drawing which follows CC 'line
- FIG. 18 (A), (D) is an enlarged plan view which shows a part of pattern of a 3rd reticle.
- (A) is an enlarged plan view showing a part of the wafer W1 from which a part of the hard mask layer has been removed after development
- (B) is a cross-sectional view taken along line BB ′ of FIG. 19 (A)
- (C) is a drawing. It is sectional drawing which follows CC 'line
- (A) is an enlarged plan view showing a part of the wafer W1 from which a part of the resist and the organic layer has been removed
- (B) is a cross-sectional view taken along line BB ′ of FIG. 20 (A)
- (C) is FIG.
- (A) is an enlarged plan view showing a part of the wafer W1 in which the cutout portion is refilled with an organic material
- (B) is a cross-sectional view taken along line BB ′ of FIG. 23 (A)
- (C) is FIG. It is sectional drawing which follows CC 'line
- (A) is an enlarged plan view showing a part of the wafer W1 after the removal of the first L & S pattern 71
- (B) is a sectional view taken along the line BB ′ of FIG. 24 (A)
- (C) is FIG. It is sectional drawing which follows CC 'line of A).
- (A) is an enlarged plan view showing a part of the wafer W2 of the third embodiment on which an image of the pattern of the third reticle is exposed
- (B) is a sectional view taken along the line BB ′ of FIG.
- (C) is sectional drawing which follows CC 'line
- (D) is an enlarged plan view which shows the pattern of a 3rd reticle.
- (A) is an enlarged plan view showing a part of the wafer W2 from which a part of the photoresist layer and the first protective layer has been removed
- (B) is a cross-sectional view taken along the line BB ′ of FIG. ) Is a cross-sectional view taken along the line CC ′ of FIG.
- FIG. 29 is a cross-sectional view taken along line CC ′ of FIG.
- FIG. 29 (A) is an enlarged plan view showing a part of the wafer W2 after the removal of the first protective layer
- (B) is a cross-sectional view taken along line BB ′ of FIG. 29 (A)
- (C) is FIG. 29 (A). It is sectional drawing which follows CC 'line. It is a flowchart which shows an example of the manufacturing process of an electronic device.
- FIG. 1A shows a main part of the pattern forming system of this embodiment
- FIG. 1B shows an exposure apparatus in FIG. 1A (in this embodiment, as an example of an exposure apparatus, a scanning tool is used.
- 1 shows a schematic configuration of 100 (showing a stepper).
- the pattern forming system includes an exposure apparatus 100, a coater / developer 200 for applying and developing a photoresist (photosensitive material) on a substrate such as a wafer, a thin film forming apparatus 300, dry and wet coating on a wafer.
- An etching apparatus 400 that performs etching, a transfer system 500 that transfers a wafer between these apparatuses, a host computer (not shown), and the like are included.
- an exposure apparatus 100 includes an illumination system 10, a reticle stage RST that holds a reticle R (mask) that is illuminated by illumination light (exposure light) IL for exposure via the illumination system 10, and A projection unit PU including a projection optical system PL that projects illumination light IL emitted from the reticle R onto the surface of a wafer W (substrate) and a wafer stage WST that holds the wafer W are provided.
- the exposure apparatus 100 also includes a main controller (not shown) composed of a computer that controls the overall operation of the apparatus.
- a main controller not shown
- the reticle R and the wafer W are relatively scanned in a Z axis that is parallel to the optical axis AX of the projection optical system PL and in a plane (substantially a horizontal plane) perpendicular to the Z axis.
- the axis along the direction along the direction perpendicular to the Z axis and the Y axis is the X axis, and the rotation (tilt) directions around the X axis, the Y axis, and the Z axis are ⁇ x and ⁇ y, respectively. , And ⁇ z direction.
- the illumination system 10 includes a light source that generates the illumination light IL and an illumination optical system that illuminates the reticle R with the illumination light IL, as disclosed in, for example, US Patent Application Publication No. 2003/025890.
- the illumination light IL for example, ArF excimer laser light (wavelength 193 nm) is used.
- ArF excimer laser light wavelength 193 nm
- KrF excimer laser light wavelength 248 nm
- harmonics of a YAG laser or a solid-state laser such as a semiconductor laser
- a bright line such as i-line
- the illumination optical system includes a polarization control optical system, a light quantity distribution forming optical system (for example, a diffractive optical element or a spatial light modulator), an optical integrator (for example, a fly-eye lens or a rod integrator (internal reflection type integrator)), etc. Including an illuminance uniforming optical system, a reticle blind (variable field stop), and the like (all not shown).
- the illumination system 10 includes a slit-like illumination area IAR elongated in the X direction on the pattern surface (lower surface) of the reticle R defined by the reticle blind, dipole illumination, quadrupole illumination, annular illumination, and coherence factor ( ⁇ value).
- the illumination light IL with a predetermined polarization state is illuminated with a substantially uniform illuminance distribution under illumination conditions such as small illumination or normal illumination.
- a reticle stage RST that holds the reticle R by vacuum suction or the like is movable on the upper surface of the reticle base (not shown) parallel to the XY plane at a constant speed in the Y direction, and in the X and Y positions. And the rotation angle in the ⁇ z direction can be adjusted.
- the position information of the reticle stage RST is obtained with a resolution of, for example, about 0.5 to 0.1 nm via the movable mirror 14 (or the mirror-finished side surface of the stage) by the reticle interferometer 18 including a multi-axis laser interferometer. Always detected.
- the position and speed of reticle stage RST are controlled by controlling a reticle stage drive system (not shown) including a linear motor and the like based on the measurement value of reticle interferometer 18.
- the projection unit PU disposed below the reticle stage RST includes a lens barrel 24 and a projection optical system PL having a plurality of optical elements held in the lens barrel 24 in a predetermined positional relationship.
- the projection optical system PL is, for example, telecentric on both sides and has a predetermined projection magnification ⁇ (for example, a reduction magnification of 1/4 times, 1/5 times, etc.). Due to the illumination light IL that has passed through the reticle R, an image of the circuit pattern in the illumination area IAR of the reticle R passes through the projection optical system PL to form an exposure area IA (conjugation with the illumination area IAR) in one shot area of the wafer W. Region).
- a wafer W as a substrate of the present embodiment is a pattern-forming thin film (oxidized) on the surface of a disk-shaped substrate having a diameter of about 200 mm or 300 mm made of, for example, silicon (or SOI (silicon-on-insulator)). Film, metal film, polysilicon film, etc.). Further, a photoresist (photosensitive material) is applied to the surface of the wafer W to be exposed with a predetermined thickness (for example, about several tens of nm to 200 nm).
- the exposure apparatus 100 performs exposure (exposure method) to which the liquid immersion method is applied, and therefore, the tip that is the optical element closest to the image plane (wafer W side) among the plurality of optical elements included in the projection optical system PL.
- a local liquid immersion device 30 for supplying the liquid Lq is provided between the lens 26 and the wafer.
- the local immersion apparatus 30 forms an immersion area only in a part of the upper surface of the wafer W.
- the local liquid immersion device 30 includes a nozzle unit 32 disposed so as to surround the lower end portion of the lens barrel 24, that is, the periphery of the distal lens 26.
- the supply port for the liquid Lq of the nozzle unit 32 is connected to a liquid supply device (not shown) via a supply flow path and a supply pipe 34A.
- the liquid Lq recovery port of the nozzle unit 32 is connected to a liquid recovery device (not shown) via a recovery flow path and a recovery pipe 34B.
- a liquid recovery device not shown
- the detailed configuration of the local liquid immersion device 30 is disclosed in, for example, US Patent Application Publication No. 2007/242247, and the like, and is incorporated herein by reference.
- Wafer stage WST is mounted on upper surface 12a parallel to the XY plane of base board 12 so as to be movable in the X and Y directions.
- Wafer stage WST is provided in stage body 20, wafer table WTB mounted on the upper surface of stage body 20, and in stage body 20, and the position of wafer table WTB (wafer W) in the Z direction relative to stage body 20 ( Z position) and a Z / leveling mechanism for relatively driving the tilt angles in the ⁇ x direction and ⁇ y direction.
- Wafer table WTB is provided with a wafer holder (not shown) that holds wafer W on a suction surface substantially parallel to the XY plane by vacuum suction or the like.
- wafer holder (wafer W) on the upper surface of wafer table WTB is a flat plate (liquid repellent) that is substantially flush with the surface of wafer W (wafer surface) and has a surface that is liquid repellent with respect to liquid Lq. Plate) 28 is provided.
- an oblique-incidence autofocus sensor (not shown) that measures the Z position of a plurality of measurement points on the wafer surface with the same configuration as disclosed in, for example, US Pat. No. 5,448,332. Is provided. During the exposure, the Z leveling mechanism of wafer stage WST is driven so that the wafer surface is focused on the image plane of projection optical system PL based on the measurement value of the autofocus sensor.
- a reflecting surface is formed on each of the end surfaces in the Y direction and the X direction of the wafer table WTB by mirror finishing.
- the position information of the wafer stage WST (at least in the X and Y directions) And a rotation angle in the ⁇ z direction) are measured with a resolution of about 0.5 to 0.1 nm, for example.
- the position and speed of wafer stage WST are controlled by controlling a wafer stage drive system (not shown) including a linear motor and the like based on the measured values.
- the position information of wafer stage WST may be measured by an encoder type detection apparatus having a diffraction grating scale and a detection head.
- exposure apparatus 100 is incorporated in wafer stage WST in order to measure the position of a wafer alignment system AL that measures the position of a predetermined alignment mark on wafer W and the image position of projection optical system PL of the alignment mark on reticle R.
- An aerial image measurement system (not shown). Using these aerial image measurement systems (reticle alignment systems) and wafer alignment systems AL, alignment between the reticle R and each shot area of the wafer W is performed.
- the shot area to be exposed on the wafer W is moved to the front of the exposure area IA by moving the wafer stage WST stepwise in the X and Y directions. Further, the liquid Lq is supplied between the projection optical system PL and the wafer W from the local liquid immersion device 30. Then, while projecting an image of a part of the pattern of the reticle R by the projection optical system PL onto one shot area of the wafer W, the reticle R and the wafer W are synchronized in the Y direction via the reticle stage RST and the wafer stage WST. The pattern image of the reticle R is scanned and exposed to the shot area. By repeating the step movement and scanning exposure, the image of the pattern of the reticle R is exposed to each shot area of the wafer W by the step-and-scan method and the liquid immersion method.
- a circuit pattern to be manufactured in the present embodiment is a circuit pattern 70 for a gate cell of an SRAM (Static RAM) as a semiconductor element, as shown in the partial enlarged view of FIG.
- the line and space pattern is referred to as an L & S pattern.
- the circuit pattern 70 is a first pattern in which a line pattern 72 having a line width d and a space portion 73 having a width d are arranged at a pitch (period) 2d in a periodic direction (hereinafter referred to as an X direction) on the surface of the substrate 36 of the wafer.
- the L & S pattern 71 is formed by removing a part of the plurality of line patterns 72. For example, in FIG.
- the circuit pattern 70 includes a plurality of separation portions 74A to 74F obtained by removing portions of the first L & S pattern 71 having a width d in the Y direction perpendicular to the X direction from every other line pattern. (Non-periodic part) is formed.
- the directions of the X axis and the Y axis in FIG. 2 are the same as those when the wafer W on which the circuit pattern 70 in FIG. 2 is formed is placed on the wafer stage WST of the exposure apparatus 100 in FIG. The description will be made assuming that the exposure apparatus 100 is parallel to the X-axis and Y-axis directions.
- the line width d is finer than the resolution limit (half pitch in the case of a periodic pattern) of the immersion type exposure apparatus 100. Accordingly, the line width d of the first L & S pattern 71 is finer than the resolution limit of the exposure apparatus 100. Furthermore, the circuit pattern 70 is also a pattern including an aperiodic portion having a width d finer than the resolution limit of the exposure apparatus 100.
- the line width d is approximately 1 ⁇ 2 of the resolution limit of the exposure apparatus 100. In other words, the resolution limit of the exposure apparatus 100 is approximately 2d.
- the resolution limit of the exposure apparatus 100 is, for example, about 40 to 50 nm, and the line width d is about 20 to 25 nm accordingly. In the following, it is assumed that the resolution limit of the exposure apparatus 100 is approximately 40 nm (half pitch) and the line width d is approximately 20 nm.
- a second line pattern 77 having a line width d and a space portion 79 having a width d are arranged at a pitch 2d in the Y direction so as to be orthogonal to the first L & S pattern 71 as indicated by a dotted line.
- the separation portions 74A to 74F in the first L & S pattern 71 are portions that intersect with any one of the space portions 79 of the second L & S pattern 78.
- the interval between the separation portions 74A and 74B of the line pattern 72 in the first region 76A and the interval between the separation portions 74C and 74D of the line pattern 72 in the second region 76B are two of the second L & S pattern 78, respectively.
- the width ( 3d) of the line pattern 77 and one space 79.
- the position of the second L & S pattern 78 in the Y direction is set based on, for example, an alignment mark (not shown) used when forming the first L & S pattern 71.
- the positions and the number of the separation portions 74A to 74F are arbitrary under the condition that they intersect with any of the space portions 79.
- a spacer double patterning method (Spacer Double Patterning Process, Spacer transfer Process or Sidewall transfer Process) is used to form a first line width d (pitch 2d) in each shot area on the surface of the wafer.
- 1 L & S pattern 71 is formed.
- a line width d (pitch 2d) is formed on the first L & S pattern 71 so as to be orthogonal to the first L & S pattern 71 by using a spacer double patterning method.
- Second L & S pattern 78 is formed. Then, as a third stage, in each shot region, separation portions 74A to 74F (width d) are formed on the plurality of line patterns 72 of the first L & S pattern 71 via the plurality of space portions 79 of the second L & S pattern 78. A notch is provided.
- the first stage corresponds to steps 102 and 104 in FIG. 3, the second stage corresponds to steps 106 to 110, and the third stage corresponds to steps 112 to 124.
- a thin film of silicon dioxide (SiO 2 ) is formed on the flat surface of a substrate 36 made of, for example, silicon of the wafer W using a thin film forming apparatus 300 as shown in FIG. 4B.
- a device layer 38 is formed. Note that an oxide film, a nitride film, or the like may be formed on the bottom surface of the device layer 38 (the surface of the base material 36).
- a first L & S pattern 71 having a pitch 2d in the X direction is formed on the device layer 38 by a spacer double patterning method. The operation of step 104 is divided into steps 130-140.
- the first intermediate layer 40 is formed on the surface of the device layer 38 of the wafer W using the thin film forming apparatus 300, and the coater / developer 200 performs the intermediate process.
- a positive photoresist layer 42 is formed on the surface of the layer 40.
- the wafer W is placed on the wafer stage WST of the immersion type exposure apparatus 100 of FIG.
- the pattern of the reticle R (first mask plate) of the exposure apparatus 100 is a line pattern Ra made of a light shielding film having a line width of 2d / ⁇ ( ⁇ is the projection magnification).
- the exposure apparatus 100 exposes each shot area of the wafer W with a reticle R pattern image 44X (an L & S pattern image having a pitch 4d in the X direction). Since the line width (half pitch) of the image 44X is 2d (almost the resolution limit), the image 44X can be formed with high accuracy by the exposure apparatus 100. At this time, in the image 44X for one pitch, the exposure amount is set so that the width in the X direction of the portion where the exposure amount is less than the photosensitive level (unexposed portion) is d.
- the photoresist layer 42 of the wafer W is developed by the coater / developer 200, and the intermediate layer 40 of the wafer W is etched by the etching apparatus 400, so that the line as shown in FIG. An L & S pattern is formed in which the resist pattern 42A having a width d and the line pattern 40A of the intermediate layer 40 are arranged at a pitch 4d in the X direction. Thereafter, the resist pattern 42A is peeled off.
- a spacer layer 46 is deposited by the thin film forming apparatus 300 so as to cover the line pattern 40A of the intermediate layer 40 of the wafer W, as shown in FIG.
- step 138 the process proceeds to step 138, and anisotropic etching is performed in a direction perpendicular to the surface of the spacer layer 46 of the wafer, as shown in FIG.
- the spacer portions 46A and 46B having the width d of the spacer layer 46 are left on both side surfaces in the X direction of the line pattern 40A of the intermediate layer 40 having the line width d.
- spacer portions 46A and 46B having a line width d are formed on the surface of the device layer 38 as shown in FIG.
- An L & S pattern arranged at a pitch 2d in the X direction is formed.
- the device layer 38 is etched using the L & S pattern composed of the spacer portions 46A and 46B as a mask, and the spacer portions 46A and 46B are removed.
- a line pattern 38A first line
- a space pattern 38S first space
- the line pattern 38A corresponds to the line pattern 72 of FIG.
- An alignment mark (not shown) is also formed along with the L & S pattern 71.
- step 106 an antireflection film generally formed on the lower surface of the photoresist so as to cover the first L & S pattern 71 of the wafer W by the thin film forming apparatus 300.
- a first protective layer 48 made of BARC (Bottom-Anti-Reflection-Coating) is formed, and the surface is flattened.
- a processing pattern layer 52 made of the same material (here, silicon dioxide) with the same thickness as the device layer 38 is formed on the surface of the first protective layer 48. Note that the thickness of the processing pattern layer 52 may be different from the thickness of the device layer 38.
- step 110 the second L & S pattern 78 having a pitch 2d in the Y direction is formed in the processing pattern layer 52 by the spacer double patterning method as in step 104.
- the operation of step 110 is also divided into steps corresponding to steps 130-140.
- the second intermediate layer 50 is formed on the surface of the processing pattern layer 52 of the wafer W, and, for example, positive on the surface of the intermediate layer 50.
- a mold photoresist layer 54 is formed.
- the wafer W is placed on the wafer stage WST of the exposure apparatus 100.
- second reticle R1 (second mask plate) is loaded on reticle stage RST of exposure apparatus 100.
- second reticle R1 (second mask plate) is loaded on reticle stage RST of exposure apparatus 100.
- the pattern of the reticle R1 is a line pattern R1a made of a light-shielding film having a line width of 2d / ⁇ ( ⁇ is a projection magnification) arranged at a pitch of 4d / ⁇ in the Y direction. L & S pattern. Then, an alignment mark (not shown) formed on reticle R1 is measured on reticle R1, and its position is adjusted based on the measurement result. Thereafter, the exposure apparatus 100 exposes a pattern image 44Y of the reticle R1 (an L & S pattern image having a pitch of 4d in the Y direction) on each shot area of the wafer W.
- the exposure amount is set so that the Y-direction width of the portion (unexposed portion) where the exposure amount is equal to or lower than the photosensitive level in the image 44Y for one pitch is d.
- the photoresist layer 54 of the wafer W is developed and the intermediate layer 50 is etched, so that the resist pattern 54A having the line width d and the intermediate layer 50 are formed as shown in FIG.
- An L & S pattern in which the line patterns 50A of the layer 50 are arranged at a pitch 4d in the Y direction is formed. Thereafter, the resist pattern 54A is peeled off.
- a spacer layer 56 is deposited so as to cover the line pattern 50A of the wafer W, as shown in FIG.
- step 138 anisotropic etching is performed in a direction perpendicular to the surface of the spacer layer 56 of the wafer, as shown in FIG.
- the spacer portions 56A and 56B having the width d of the spacer layer 56 are left on both side surfaces in the Y direction of the line pattern 50A having the line width d.
- spacer portions 56A and 56B having a line width d are arranged at a pitch 2d in the Y direction on the surface of the processing pattern layer 52 as shown in FIG. 5F.
- An L & S pattern is formed.
- the processing pattern layer 52 is etched using the L & S pattern made of the spacer portions 56A and 56B as a mask, and then the spacer portions 56A and 56B are removed, whereby FIG. 5G (enlarged plan view), line patterns 52A having a line width d are arranged at a pitch 2d in the Y direction on the processing pattern layer 52 on the surface of the first protective layer 48 of the wafer W.
- Second L & S pattern 78 is formed (space pattern 52S (second space: corresponding to space portion 79) is partitioned between adjacent line patterns 52A).
- the line pattern 52A corresponds to the line pattern 77 in FIG.
- FIGS. 6A to 12A are enlarged plan views showing portions corresponding to the first region 76A in each shot region on the surface of the wafer W, and FIGS. 6B to 12B are respectively shown.
- FIGS. 6A to 12A are cross-sectional views taken along line BB ′, and FIGS. 6C to 12C are taken along line CC ′ in FIGS. 6A to 12A, respectively. It is sectional drawing.
- a second protective layer 58 and a photoresist layer 60 described later are shown as transparent members.
- the thin film forming apparatus 300 is used to form the second L & S pattern 78 of the wafer W so as to cover BARC (Bottom ⁇ ⁇ ⁇ ⁇ Anti-Reflection Coating).
- the second protective layer 58 is formed and the surface is flattened. Further, for example, a positive photoresist layer 60 is formed on the surface of the second protective layer 58 using the coater / developer 200.
- wafer W is mounted on wafer stage WST of exposure apparatus 100 in FIG.
- a reticle stage RST of the exposure apparatus 100 is loaded with a third reticle R3 (third mask plate) instead of the reticle R1.
- an opening pattern for forming an image having a size including the separating portions 74A to 74B is formed corresponding to the separating portions 74A to 74F in FIG.
- the width in the X direction and the Y direction is 2d / ⁇ ( ⁇ is the projection magnification) in the light shielding film.
- two opening patterns R3a and R3b having an interval in the Y direction of 2d / ⁇ are formed.
- a square shape is shown as the shape of the two opening patterns R3a and R3b, but the present invention is not limited to this.
- a pattern subjected to OPC (OpticalOproximity correction) processing may be used as the two opening patterns.
- the alignment mark (not shown) formed on the reticle R3 is measured on the reticle R3, and the position thereof is adjusted based on the measurement result.
- the exposure apparatus 100 exposes the images 62A and 62B of the opening patterns R3a and R3b of the reticle R3, as shown in FIG. 6A, to the portion corresponding to the first area 76A of each shot area of the wafer W. .
- the image of the projection optical system PL is an erect image.
- FIG. 6A shows a state in which the images 62A and 62B are deformed to some extent. For example, if the surface of the wafer W is displaced from the image plane of the projection optical system (the images of the opening patterns R3a and R3b are defocused with respect to the surface of the wafer W), the images of the opening patterns R3a and R3b The (contour portion that crosses the photosensitive level of the photoresist) is further deformed as images A2 and B2.
- the images of the opening patterns R3a and R3b are allowed to be displaced and deformed within a range that covers the separation portions 74A and 74B whose widths in the X and Y directions are d.
- 6A shows that the separation portions 74A and 74B are regions where the space pattern 52S of the second L & S pattern 78 and the line pattern 38A of the first L & S pattern 71 overlap.
- the photoresist layer 60 of the wafer W is developed in the coater / developer 200.
- first openings 60A and 60B are formed in portions corresponding to the images 62A and 62B of the photoresist layer 60 of the wafer W.
- openings are formed in the second protective layer 58 and the first protective layer 48 of the wafer W through the openings 60A and 60B by, for example, dry etching with the etching apparatus 400.
- the third openings 58A and 58B (the same shape as the openings 60A and 60B) of the second protective layer 58 and the second openings of the first protective layer 48 are provided.
- Openings 48A and 48B are formed.
- the openings 48A and 48B have a region in which the Y direction is limited by the adjacent line pattern 52A and the X direction is limited by the images 62A and 62B, and a part of the line pattern 38A (removed in this region).
- the second openings 48A and 48B of the first protective layer 48 have the ends of the pair of line patterns (second lines) 52A of the second L & S pattern 78 as boundaries, that is, the second L & S pattern 78. It can be seen that this is formed by etching using the pair of line patterns (second lines) 52A as a mask. Thereafter, the photoresist layer 60 (resist) is peeled off. In the next step 118, the etching apparatus 400 forms the second L & S pattern 78 (line pattern 52A) and the first L & S pattern 71 (line pattern 38A) through the openings 58A and 58B and the openings 48A and 48B of the wafer W.
- notches 52Aa and 52Ab are formed in the line pattern 52A in the openings 58A and 58B, and the line pattern 38A in the openings 48A and 48B is separated. Cutout portions 38Aa and 38Ab are formed in portions corresponding to the portions 74A and 74B.
- the notches 38Aa and 38Ab are the portions (side walls) of the first protective layer 48 that define the second openings 48A and 48B of the first protective layer 48 and the pair of second L & S present thereon. It can be seen that the line pattern (second line) 52A of the pattern 78 is formed as a mask.
- step 120 the second protective layer 58 (the upper BARC) of the wafer W is removed by, for example, dry etching using the etching apparatus 400, and in FIG. 11 (A) to 11 (C), the remaining part of the second L & S pattern 78 (line pattern 52A) of the wafer W is removed by the etching apparatus 400 by, for example, an etch back method, and in step 124, for example, an ashing apparatus.
- the remaining portion of the first protective layer 48 (lower BARC) is removed by dry ashing (not shown).
- the circuit pattern is the same as the circuit pattern in the first region 76A of FIG.
- a circuit pattern having portions 74E and 74F is also formed. Since the circuit pattern in the former second region 76B is the same as the circuit pattern in the first region 76A, description of the formation process is omitted.
- a portion corresponding to the third region 76C of the third reticle R3 loaded on the exposure apparatus 100 is, for example, as shown in FIG.
- an elongated (long hole-like) opening pattern R3c having a width 2d / ⁇ in the X direction and a width 4d / ⁇ in the Y direction is formed.
- a rectangular shape is shown as the shape of the opening pattern R3c.
- a pattern subjected to OPC (Optical proximity correction) processing may be used as the opening pattern.
- OPC Optical proximity correction
- FIGS. 13A to 16C a process of forming the pattern in the third region 76C will be described with reference to FIGS. 13A to 16C.
- FIG. 13 (A) to FIG. 16 (C) portions corresponding to FIG. 6 (A) to FIG. 12 (C) are assigned the same reference numerals and detailed description thereof is omitted.
- FIGS. 13A to 16A are enlarged plan views showing a portion corresponding to the third region 76C in each shot region of the wafer W
- FIGS. 13B to 16B are FIGS.
- FIGS. 13A to 16C are cross-sectional views taken along line BB ′ in FIGS. 13A to 16A
- FIGS. 13C to 16C are cross-sectional views taken along line CC ′ in FIGS. It is.
- the second protective layer 58 and the photoresist layer 60 are shown as transparent members.
- an image 62C of the elongated opening pattern R3c of the reticle R3 is formed on the portion corresponding to the third area 76C of each shot area of the wafer W by the exposure apparatus 100 as shown in FIG. To expose.
- the ideal shape C1 of the image 62C is a rectangle having a width in the X direction of 2d and a width in the Y direction of 4d.
- the resolution limit of the exposure apparatus 100 is 2d, but the opening pattern R3c is an isolated pattern. Therefore, FIG. 13A shows a state where the image 62C is deformed to some extent.
- the image of the opening pattern R3c is allowed to be displaced and deformed within a range that covers the separation portions 74E and 74F having the widths in the X direction and the Y direction of d.
- development of the photoresist layer 60 of the wafer W is performed, and as shown in FIGS. 14A to 14C, a first elongated opening 60C (a portion corresponding to the image 62C) of the photoresist layer 60 is formed. Is done.
- the third opening 58C is formed in the second protective layer 58 through the opening 60C, for example, by dry etching, and the second openings 48C1 and 48C2 are formed in the first protective layer 48.
- the third opening 58C has a part of one line pattern 52A at the center, and part of a pair of line patterns exists so as to sandwich the one line pattern 52A.
- the second openings 48C1 and 48C2 have regions in which the Y direction is limited to adjacent line patterns 52A and the X direction is limited by the image of the opening pattern R3c.
- the photoresist layer 60 is peeled off.
- step 118 the silicon dioxide thin film forming the second L & S pattern 78 (line pattern 52A) and the first L & S pattern 71 (line pattern 38A) through the opening 58C and the openings 48C1 and 48C2 of the wafer W is formed. Etching is performed. As a result, as shown in FIGS. 15A to 15C, notches 52Ac1, 52Ac2, 52Ac3 are formed in the three line patterns 52A in the opening 58C, and the line patterns in the openings 48C2, 48C1 are formed. Cutout portions 38Ae and 38Af are formed in portions corresponding to the separation portions 74E and 74F of 38A.
- step 120 the second protective layer 58 of the wafer W is removed by, for example, dry etching.
- step 122 the remaining portion of the second L & S pattern 78 (line pattern 52A) is removed by, for example, an etch back method.
- step 124 the remaining portion of the first protective layer 48 is removed by dry ashing, for example.
- FIGS. 16A to 16C notches 38Ae and 38Af having a width d in the Y direction are formed in the line pattern 38A at portions corresponding to the separation portions 74E and 74F having the distance d.
- a circuit pattern can be obtained.
- the line pattern 38A as the line pattern 72, the circuit pattern is the same as the circuit pattern in the third region 76C of FIG.
- the distance d in the Y direction of the separation parts 74E and 74F and the width d in the Y direction of the separation parts 74E and 74F are the pitch 2d of the second L & S pattern 78 formed in step 110 and the width d of the space part 79.
- the separation portions 74A to 74F are formed in the third stage.
- the exposure apparatus 100 exposes the images of the opening patterns R3a to R3c corresponding to the portion corresponding to (non-periodic portion). Then, within the opening formed by the image, a plurality of line patterns 38A (72) of the first L & S pattern 71 are cut by a width d through the plurality of spaces 79 of the second L & S pattern 52A (78). Notched portions (separating portions 74A to 74F) are provided. Therefore, the circuit pattern 70 including the non-periodic portion finer than the resolution limit of the exposure apparatus 100 can be formed with high accuracy using the exposure apparatus 100.
- a pattern forming method using a pattern forming system including the exposure apparatus 100 of the present embodiment is a first L & S pattern having a plurality of first line patterns 38A (72) arranged in the X direction on the wafer W.
- the pattern forming method includes the step 114 of forming a pattern having the first openings 60A, 60B, 60C in the photoresist layer 60 so as to overlap a part of the second L & S pattern 78, and the photoresist layer.
- the second protective layer 58 and a part of the first protective layer 48 are removed through the openings 60A to 60C formed in the 60, and the second openings 48A, 48B, 48C1, 48C2 are formed in the first protective layer 48.
- the L & S patterns 71 and 78 are resolved by the spacer double patterning method using the exposure apparatus 100.
- a pattern finer than the limit can be formed.
- the (predetermined) space portion 79 corresponding to the separation portions 74A, 74B, 74E, and 74F of the second L & S pattern 78 overlaps the portion to be removed in the first L & S pattern 71.
- the exposure apparatus 100 is used to expose the images to be the openings 60A to 60C of the photoresist layer 60 so as to cover the portions to be removed.
- the openings 48A to 48C2 of the first protective layer 48 are formed at the portions where the space 79 serving as the separation portion 74A and the openings 60A to 60C overlap with each other. Only the portion to be removed of the first L & S pattern 71 can be removed with high accuracy.
- the step of forming the first L & S pattern 71 and the second L & S pattern 78 by applying the spacer double patterning method includes a plurality of line patterns each having a pitch (4d) twice the pitch of the plurality of line patterns 38A. Steps 132 and 134 for forming a plurality of line patterns 50A having a pitch (4d) twice the pitch of 40A and the plurality of line patterns 52A, and a plurality of line patterns 40A and 50A are used to halve these pitches.
- the first openings 60A and 60B of the photoresist layer 60 are at least part of one space portion 79 of the second L & S pattern 78 (the width of the space portion 79 is equal to or larger than the width of the space portion 79). (See FIG. 7A).
- the line pattern 38A of the first L & S pattern 71 can be cut out with high accuracy at the portion overlapping the space portion 79.
- the number of openings (and thus notches) of the photoresist layer 60 may be only one on one line pattern 38A.
- the first opening 60C provided in the photoresist layer 60 is at least part of two adjacent space portions 79 of the second L & S pattern 78 (straddling two adjacent space portions). And a part of the length of the space 79) (see FIG. 14A).
- the second openings 48C2 and 48C1 of the one protective layer 48 are mutually connected. It is formed at a position corresponding to two adjacent space portions 79.
- the notches 38Ae and 38Af can be easily formed at two locations along the line pattern 38A with the minimum distance d through one opening 60C of the photoresist layer 60.
- a second protective layer 58 made of an antireflection film (BARC) is formed between the protective layer 48 and the photoresist layer 60 so as to cover the second L & S pattern 78 (step 112).
- BARC antireflection film
- the space portion 79 of the second L & S pattern 78 is defined by the line pattern 52A of the second L & S pattern 78, a part of the first L & S pattern 71 is part of the line pattern 52A of the second L & S pattern 78. It can be said that a part of is formed as a mask.
- the first protective layer 48 is also formed of an antireflection film (BARC).
- BARC antireflection film
- the second protective layer 58 and the first protective layer 48 made of BARC are hard masks, a circuit pattern can be formed at a lower cost than when a dedicated hard mask is used.
- the antireflection film (BARC) is an organic material, when the L & S patterns 71 and 78 are inorganic materials such as silicon dioxide or metal, resistance to etching is different, which is particularly suitable as a hard mask.
- the pattern forming system in FIG. 1A and the exposure apparatus 100 in FIG. 1B are used.
- the pattern formed in the present embodiment is a circuit pattern in which the convex portion (the portion of the line pattern 72 other than the separating portions 74A to 74F) of the circuit pattern 70 in FIG. 2 is a concave portion.
- a first L & S pattern 71 having a line width d is formed in each shot region on the surface of the wafer (referred to as wafer W1) by using a spacer double patterning method.
- wafer W1 the surface of the wafer
- a line width d is formed on the first L & S pattern 71 so as to be orthogonal to the first L & S pattern 71 by using a spacer double patterning method.
- Second L & S pattern 78 is formed.
- each shot region separation portions 74A to 74F having a width d are provided on the plurality of line patterns 72 of the first L & S pattern 71 via the plurality of space portions 79 of the second L & S pattern 78.
- each line pattern 72 is removed.
- the first stage corresponds to steps 102A, 104A, 150, 152 in FIG. 17, the second stage corresponds to steps 108A, 110A, and the third stage corresponds to steps 154 to 166.
- step 102A of FIG. 17 a device layer (not shown) made of a thin film of silicon dioxide (SiO 2 ) is formed on the flat surface of a substrate 36 made of silicon, for example, of the wafer W1. ).
- a first L & S pattern 71 in which line patterns 38A having a plurality of line widths d are arranged at a pitch 2d in the X direction by a spacer double patterning method is formed on the device layer.
- an organic layer 64 which is a thin film made of a low dielectric constant organic material (so-called low-k organic material), is formed (filled) so as to fill the space portion of the first L & S pattern 71;
- the surfaces of the first L & S pattern 71 and the organic layer 64 are planarized.
- the low dielectric constant organic material include a porous organic silica film (SiOCH) having a relative dielectric constant of about 4 or less (more preferably about 3 or less), or an organic SOG (spin) having a porous organic glass material. -on glass) materials can be used.
- SiOCH porous organic silica film
- spin organic SOG
- a hard mask layer 66 made of an inorganic material such as a nitride film is formed so as to cover the first L & S pattern 71 (and the organic layer 64).
- a processing pattern layer (not shown) made of the same material (here, silicon dioxide) with the same thickness as the device layer is formed on the surface of the hard mask layer 66. Note that the thickness of the pattern layer for processing may be different from the thickness of the device layer.
- the line pattern 52A having a plurality of line widths d is formed in the Y direction by the spacer double patterning method as shown in FIG. A second L & S pattern 78 arranged at a pitch of 2d is formed.
- FIGS. 18 (A) to 24 (C) portions corresponding to FIG. 6 (A) to FIG. 12 (C) are denoted by the same reference numerals and detailed description thereof is omitted.
- 18A to 24A are enlarged plan views showing portions corresponding to the first area 76A in each shot area on the surface of the wafer W1, and FIGS. 18B to 24B are respectively shown.
- 18A to 24A are cross-sectional views taken along line BB ′
- FIGS. 18C to 24C are taken along line CC ′ in FIGS. 18A to 24A, respectively. It is sectional drawing.
- a later-described photoresist layer 60 is shown as a transparent member.
- a positive photoresist layer 60 is formed (coated) so as to cover the second L & S pattern 78 of the wafer W1.
- the exposure apparatus 100 applies a portion corresponding to the first region 76A of each shot region of the wafer W1 to the portion shown in FIG. D)
- the images 62A and 62B of the opening patterns R3a and R3b having the width 2d / ⁇ of the reticle R3 are exposed.
- first openings 60A and 60B are formed in portions corresponding to the images 62A and 62B (see FIGS. 18B and 18C).
- the hard mask layer 66 of the wafer W1 is etched through the openings 60A and 60B, thereby forming the openings 60A and 60B and the second L & S as shown in FIGS.
- Second openings 66A and 66B of the hard mask layer 66 are formed at portions where the space portions of the pattern 78 overlap (portions straddling the line pattern 38A).
- a part of the organic layer 64 is removed through the openings 66A and 66B, for example, by dry etching. As a result, as shown in FIGS. 20A to 20C, a line is formed in the first space portion among the first and second space portions separating one space portion of the second L & S pattern 78.
- a pair of openings 64A1 and 64A2 of the organic layer 64 are formed so as to sandwich the pattern 38A, and another pair of openings 64B1 and 64B2 of the organic layer 64 are formed so as to sandwich the line pattern 38A in the second space portion. It is formed.
- the second L & S pattern 78 (here, silicon dioxide film) is etched, and the first L & S pattern 71 is passed through the openings 66A and 66B of the hard mask layer 66. Etching (here, silicon dioxide film) is performed.
- the line pattern 52A of the second L & S pattern 78 is prevented from remaining. Accordingly, as shown in FIGS. 21A to 21C, the cutout portion 38Aa is formed in the line pattern 38A of the first L & S pattern 71 at a position corresponding to the separation portions 74A and 74B in the openings 66A and 66B. , 38Ab are formed.
- each pair of openings 64A1, 64A2, and 64B1, 64B2 in FIG. 20A becomes one opening 64A and 64B.
- the hard mask layer 66 is removed by, for example, an etch back method to include the line pattern 38A provided with the notches 38Aa and 38Ab as shown in FIGS. A first L & S pattern 71 appears.
- the notch portions 38Aa and 38Ab of the first L & S pattern 71 are filled with an organic material having the same low dielectric constant as that of the organic layer 64. 64P and 64Q are refilled and the surface is flattened.
- the next step 164 by removing only the first L & S pattern 71 (silicon dioxide film) from the wafer W1, for example, by wet etching, as shown in FIGS.
- the second L & S pattern 71 in FIG. A circuit pattern in which a portion corresponding to the convex line pattern 72 in one region 76A is regarded as a concave line pattern 38B (or 72B) is formed.
- the central line pattern 38B includes flat portions 38Ba and 38Bb (a non-periodic portion finer than the resolution limit of the exposure apparatus 100) at a position where the interval in the Y direction corresponding to the separation portions 74A and 74B is 3d. ) Is formed.
- the concave line pattern 38B (concave portion) may be filled with a conductive material such as copper.
- a conductive material such as copper.
- the circuit pattern corresponding to the pattern in the first region 76A of the circuit pattern 70 of FIG. 2 is formed in the same manner. According to the present embodiment, the following effects and the like can be obtained in addition to the effects of the first embodiment.
- step 104A for forming a first L & S pattern 71 having a plurality of first line patterns 38A arranged in the X direction on the wafer W1, and the first L & S pattern A step 152 of forming a hard mask layer 66 so as to cover 71, and a second shape in which a plurality of second line patterns 52A extending in a direction perpendicular to the line pattern 38A are arranged on the hard mask layer 66 in the Y direction.
- the pattern forming method includes a step 114A of forming a pattern having the first openings 60A and 60B in the photoresist layer 60 so as to overlap a part of the second L & S pattern 78, and the openings 60A and 60B.
- a part of the hard mask layer 66 is removed through the step 156 to form second openings 66A and 66B in the hard mask layer 66, and the first L & S pattern 71 of the first L & S pattern 71 is formed through the openings 66A and 66B.
- Step 118A for removing a part (separation parts 74A and 74B) and step 160 for removing the hard mask layer 66 are included.
- the first and second L & S patterns 71 and 78 can be formed as patterns finer than the resolution limit of the exposure apparatus 100. Further, by using the exposure apparatus 100, the image that becomes the openings 60 ⁇ / b> A and 60 ⁇ / b> B of the photoresist layer 60 is a portion that overlaps the space portion of the second L & S pattern 78 and the line pattern 38 ⁇ / b> A of the first L & S pattern 71. It exposes so that the part (separation part 74A, 74B) used as removal object may be covered.
- the openings 66A and 66B of the hard mask layer 66 are formed at the portion where the separation part 74A and the like and the openings 60A and 60B overlap, the first L & S pattern is formed via the openings 66A and 66B. Only the portion to be removed of 71 can be removed with high accuracy.
- the pattern forming method includes the step 150 of filling the space portion of the first L & S pattern 71 with the organic layer 64 when forming the first L & S pattern 71 on the wafer W1, the hard mask layer 66, After the second L & S pattern 78 is removed, the removed portions (notches 38Aa, 38Ab) in the first L & S pattern 71 are filled with thin films (filling portions 64P, 64Q) of the same material as the organic layer 64. Step 162 and Step 164 for removing the first L & S pattern 71.
- a circuit pattern can be formed in which the separation portions 74A and 74B are flat portions and the first L & S pattern 71 is a concave portion. Even a trench pattern can be formed in the same manner.
- the organic layer 64 is an insulating film made of an organic material having a low dielectric constant, and the hard mask layer 66 is an inorganic film, the organic layer 64 and the hard mask layer 66 have different etching resistances. Therefore, after the openings 64A and 64B are formed in the organic layer 64, only the hard mask layer 66 can be easily removed.
- FIGS. 25 (A) to 29 (C) a third embodiment of the present invention will be described with reference to FIGS. 25 (A) to 29 (C).
- the pattern forming system in FIG. 1A and the exposure apparatus 100 in FIG. 1B are used.
- the pattern formed in the present embodiment is a circuit pattern in the first region 76A in the circuit pattern 70 of FIG.
- an example of the pattern forming method of the present embodiment will be described in comparison with the operation of the first embodiment (the flowchart of FIG. 3).
- a plurality of surfaces are formed on the flat surface of the substrate 36 of the wafer (referred to as wafer W2) by the spacer double patterning method.
- a first protective layer 48 (hereinafter simply referred to as protective layer 48 in the present embodiment) made of an antireflection film (BARC) is formed so as to cover the first L & S pattern 71 of the wafer W2.
- a processing pattern layer 52 (see FIG.
- FIGS. 25A to 29A are enlarged plan views showing portions corresponding to the first region 76A in each shot region on the surface of the wafer W2, and FIGS. 25B to 29B are respectively shown.
- FIGS. 25A to 29A are cross-sectional views taken along line BB ′, and FIGS. 25C to 29C are taken along line CC ′ in FIGS. 25A to 29A, respectively. It is sectional drawing.
- a later-described photoresist layer 60 is shown as a transparent member.
- a positive photoresist layer 60 is formed so as to cover the second L & S pattern 78A of the wafer W2.
- Form (apply) the exposure apparatus 100 applies a portion corresponding to the first area 76A of each shot area of the wafer W2 to the X of the reticle R4 in FIG. 25D as shown in FIG.
- An ideal image A3 of the image 62D is a rectangular image that covers the separation portions 74A and 74B having a width 2d in the X direction and a width 6d in the Y direction, but in practice it may be deformed to some extent due to aberration or the like. There is no problem.
- a first opening 60D is formed at a portion corresponding to the image 62D.
- a rectangular shape is shown as the shape of the opening pattern R4a of the reticle R4, but the shape is not limited to this.
- a pattern subjected to OPC (Optical proximity ⁇ correction) processing may be used as the opening pattern.
- an opening is formed in the protective layer 48 of the wafer W2 through the opening 60D, for example, by dry etching.
- the second openings 48D and 48E of the protective layer 48 are formed.
- the second L & S pattern 78A (here, silicon dioxide film) is etched, and the line pattern 38A (here, the first L & S pattern 71 is passed through the openings 48D and 48E of the protective layer 48). Etching of silicon dioxide film).
- the line pattern 38A here, the first L & S pattern 71 is passed through the openings 48D and 48E of the protective layer 48. Etching of silicon dioxide film).
- notches 38Aa and 38Ab are formed in the line pattern 38A at positions corresponding to the separating portions 74A and 74B in the openings 48D and 48E.
- notches 52Ba, 52Bb, 52Bc are also formed in the line pattern 52B of the second L & S pattern 78A.
- the remaining photoresist layer 60 is removed by, for example, ashing
- the second L & S pattern 78A is removed by, for example, an etch back method.
- the first L & S pattern 71 whose surface is covered with the protective layer 48 and the notches 38Aa and 38Ab are formed appears.
- the protective layer 48 is removed by, for example, dry ashing to include a line pattern 38A provided with notches 38Aa and 38Ab as shown in FIGS. A first L & S pattern 71 is formed.
- the second L & S pattern 78A is a pattern in which the width (d) of the space portion 79A is narrower than the width (3d) of the second line pattern 52B, and the first opening of the photoresist layer 60 is formed.
- the part 60D is a long hole of a size that covers at least a part of the two space parts 79A adjacent to each other in the second L & S pattern 78A. Therefore, the cutout portions 38Aa and 38Ab (separation portions 74A and 74B) can be formed at two locations of the line pattern 38A only by forming one elongated hole (opening portion 60D). For this reason, a pattern including an aperiodic portion finer than the resolution limit of the exposure apparatus 100 can be easily formed.
- the second L & S pattern 78A when the second L & S pattern 78A is formed so as to cover the protective layer 48, a fourth pattern (a plurality of line patterns 50A) having the L & S pattern is formed on the protective layer 48, and the lines of the fourth pattern are formed.
- the width of the pattern 50A (or the space portions 56A and 56B) is larger than 1 ⁇ 2 of the pitch (4d) of the fourth pattern, for example, 3d. Therefore, the second L & S pattern 78A can be easily formed.
- the first L & S pattern 71 (first line patterns 38A, 71) and the second L & S patterns 78, 78A (second line patterns 52A, 77, 52B) are mutually connected. Orthogonal. However, the first L & S pattern 71 and the second L & S patterns 78 and 78A may intersect at an angle smaller than 90 °. Further, a pattern including at least one line pattern 38A may be formed instead of the first L & S pattern 71, and at least one line pattern 52A, 52B may be formed instead of the second L & S pattern 78, 78A. You may form the pattern containing.
- the first L & S pattern 71 and the second L & S pattern 78 are formed by the spacer double patterning method.
- a pitch division method Pitch-Splitting Process
- a double exposure method Double (Exposure Process) or a double patterning method (Double Patterning Process) may be applied.
- an L & S pattern having a pitch of 1 ⁇ 2 is formed from an original L & S pattern by a spacer double patterning method.
- an L & S pattern (which becomes the L & S patterns 71 and 78) having a pitch of 1 / (2k) (k is an integer of 1 or more) with respect to this pitch from the original pattern.
- k is an integer of 1 or more
- the line patterns 38A and 71 in the circuit pattern to be formed are made of silicon dioxide, but the material of the line patterns 38A and 71 is any other material such as a conductive material (for example, copper). Such a material may be used.
- a part of the periodic pattern (first L & S pattern 71) is removed.
- the above embodiment can be used also when a part of the aperiodic pattern is removed.
- the pattern forming method can be applied.
- the above pattern forming method can be applied when an aperiodic pattern is added to a periodic pattern or an aperiodic pattern.
- the semiconductor device performs a function / performance design of the semiconductor device as shown in FIG. 221, manufacturing a mask (reticle) based on this design step 222, manufacturing a semiconductor device substrate (or wafer substrate) 223, substrate processing step 224, device assembly step (dicing process, bonding process) , Including a processing process such as a packaging process) 225, an inspection step 226, and the like.
- the substrate processing step 224 includes a step of exposing the reticle pattern onto the substrate with an exposure apparatus, a step of developing the exposed substrate, and a step of heating (curing) and etching the developed substrate.
- this device manufacturing method includes a substrate processing step 224.
- This substrate processing step 224 is performed on the substrate (wafers W, W1, W2) using any one of the pattern forming methods in the above embodiments. Includes a step of forming a pattern obtained by removing a part of the predetermined pattern (line patterns 38A, 72).
- the pattern formed on the substrate is a pattern obtained by removing a part of the periodic pattern (first L & S pattern 71).
- a semiconductor device including a circuit pattern including an aperiodic portion finer than the resolution limit of the exposure apparatus can be manufactured with high accuracy using the exposure apparatus.
- the device to be manufactured in the above embodiment can be any semiconductor device such as DRAM, CPU, DSP other than SRAM.
- the pattern forming method of the above-described embodiment can also be applied when manufacturing an imaging device other than a semiconductor device, or an electronic device (microdevice) such as MEMS (Microelectromechanical Systems).
- a dry type exposure apparatus that is not an immersion type may be used.
- an EUV exposure apparatus that uses EUV light (Extreme Ultraviolet Light) having a wavelength of several nanometers to several tens of nanometers as exposure light may be used.
- this invention is not limited to the above-mentioned embodiment, A various structure can be taken in the range which does not deviate from the summary of this invention.
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Abstract
Description
後者のスペーサ・ダブルパターニング法(スペーサプロセス法)では、例えばデバイスパターンの2倍のピッチのマスクパターンの像の露光及び現像によってピッチの1/4の複数のラインパターンを形成し、各ラインパターンの両サイドのスペース部(側壁部)にスペーサを堆積した後、例えば各ラインパターンを除去することでピッチが1/2のパターンが得られる(例えば、非特許文献3参照)。
本発明は、このような事情に鑑み、露光装置の解像限界よりも微細なパターンを形成できるようにすることを目的とする。
また、本発明の第4の態様によれば、本発明の第1または第2の態様のパターン形成方法を用いるデバイス製造方法が提供される。
本発明の第1の実施形態につき図1~図16を参照して説明する。まず、本実施形態において半導体素子等の電子デバイスやマイクロデバイス等の回路パターンを形成するために使用されるパターン形成システムの一例につき説明する。
図1(A)は、本実施形態のパターン形成システムの要部を示し、図1(B)は、図1(A)中の露光装置(本実施形態では、露光装置の一例として、スキャンニグステッパーを示している)100の概略構成を示す。図1(A)において、そのパターン形成システムは、露光装置100、ウエハ等の基板に対するフォトレジスト(感光材料)の塗布及び現像を行うコータ・デベロッパ200、薄膜形成装置300、ウエハに対するドライ及びウエットのエッチングを行うエッチング装置400、これらの装置間でウエハの搬送を行う搬送系500、及びホストコンピュータ(不図示)等を含んでいる。
以下、第3領域76C内のパターンが形成される過程につき、図13(A)~図16(C)を参照して説明する。図13(A)~図16(C)内で図6(A)~図12(C)に対応する部分には同一の符号を付してその詳細な説明を省略する。
(1)本実施形態の露光装置100を含むパターン形成システムを用いたパターン形成方法は、ウエハW上にX方向に配列された複数の第1ラインパターン38A(72)を有する第1のL&Sパターン71を形成するステップ104と、第1のL&Sパターン71を覆うように第1保護層48を形成するステップ106と、第1保護層48上に、第1ラインパターン38Aに直交する方向に伸びる複数の第2ラインパターン52A(77)をY方向に配列した形状の第2のL&Sパターン78を形成するステップ110と、第2のL&Sパターン78を覆うように第2保護層58を形成し、第2保護層58を覆うようにフォトレジスト層60を形成するステップ112と、を有する。さらに、そのパターン形成方法は、第2のL&Sパターン78の一部と重なるように、フォトレジスト層60に第1の開口部60A,60B,60Cを有するパターンを形成するステップ114と、フォトレジスト層60に形成された開口部60A~60Cを介して第2保護層58及び第1保護層48の一部を除去して、第1保護層48に第2の開口部48A,48B,48C1,48C2を形成するステップ116と、第1保護層48の開口部48A~48C2を介して第1のL&Sパターン71の一部(分離部74A,74B,74E,74F)を除去するステップ118と、第2保護層58、第2のL&Sパターン78、及び第1保護層48を除去するステップ120,122,124と、を有する。
(2)また、スペーサ・ダブルパターニング法を適用して第1L&Sパターン71及び第2L&Sパターン78を形成する工程は、それぞれ複数のラインパターン38Aのピッチの2倍のピッチ(4d)の複数のラインパターン40A及び複数のラインパターン52Aのピッチの2倍のピッチ(4d)の複数のラインパターン50Aを形成するステップ132,134と、複数のラインパターン40A及び50Aを用いて、これらのピッチの1/2のピッチ(2d)の第1のL&Sパターン71及び第2のL&Sパターン78を形成するステップ136,138,140と、を有する。従って、露光装置100の解像限界の1/2までの線幅(ハーフピッチ)のL&Sパターン71,78を高精度に形成できる。
次に、本発明の第2の実施形態につき図17~図24(C)を参照して説明する。本実施形態においても、図1(A)のパターン形成システム及び図1(B)の露光装置100が使用される。また、本実施形態で形成されるパターンは、図2の回路パターン70の凸部(分離部74A~74F以外のラインパターン72の部分)を凹部とした回路パターンである。
本実施形態によれば、第1の実施形態の効果等に加えて以下の効果等が得られる。
(1)本実施形態のパターン形成方法は、ウエハW1上にX方向に配列された複数の第1のラインパターン38Aを有する第1のL&Sパターン71を形成するステップ104Aと、第1のL&Sパターン71を覆うようにハードマスク層66を形成するステップ152と、ハードマスク層66上に、ラインパターン38Aに直交する方向に伸びる複数の第2のラインパターン52AをY方向に配列した形状の第2のL&Sパターン78を形成するステップ110Aと、第2のL&Sパターン78を覆うようにフォトレジスト層60を形成するステップ154と、を有する。さらに、そのパターン形成方法は、第2のL&Sパターン78の一部と重なるように、フォトレジスト層60に第1の開口部60A,60Bを有するパターンを形成するステップ114Aと、開口部60A,60Bを介してハードマスク層66の一部を除去して、ハードマスク層66に第2の開口部66A,66Bを形成するステップ156と、開口部66A,66Bを介して第1のL&Sパターン71の一部(分離部74A,74B)を除去するステップ118Aと、ハードマスク層66を除去するステップ160と、を有する。
(2)また、そのパターン形成方法は、ウエハW1に第1のL&Sパターン71を形成するときに第1のL&Sパターン71のスペース部に有機層64を充填するステップ150と、ハードマスク層66及び第2のL&Sパターン78を除去した後、第1のL&Sパターン71内の除去された部分(切り欠き部38Aa,38Ab)に有機層64と同じ材料の薄膜(充填部64P,64Q)を充填するステップ162と、第1のL&Sパターン71を除去するステップ164と、を有する。
(3)また、有機層64は、誘電率の小さい有機材料からなる絶縁膜であり、ハードマスク層66は無機膜であるため、有機層64とハードマスク層66とはエッチングの耐性が異なる。従って、有機層64に開口部64A,64Bを形成した後、ハードマスク層66のみを容易に除去できる。
次に、本発明の第3の実施形態につき図25(A)~図29(C)を参照して説明する。本実施形態においても、図1(A)のパターン形成システム及び図1(B)の露光装置100が使用される。また、本実施形態で形成されるパターンは、図2の回路パターン70中の第1領域76A内の回路パターンである。以下、本実施形態のパターン形成方法の一例につき、第1の実施形態の動作(図3のフローチャート)と比較しながら説明する。
(1)上記の各実施形態では、第1のL&Sパターン71(第1のラインパターン38A,71)と第2のL&Sパターン78,78A(第2のラインパターン52A,77,52B)とは互いに直交している。しかしながら、第1のL&Sパターン71と第2のL&Sパターン78,78Aとは90°より小さい角度で交差していてもよい。また、第1のL&Sパターン71の代わりに、少なくとも1つのラインパターン38Aを含むパターンを形成しておいてもよく、第2のL&Sパターン78,78Aの代わりに、少なくとも1つのラインパターン52A,52Bを含むパターンを形成しておいてもよい。
(4)上記の各実施形態では、周期的なパターン(第1のL&Sパターン71)の一部を除去しているが、非周期的なパターンの一部を除去する場合にも上記の実施形態のパターン形成方法が適用可能である。また、周期的なパターン又は非周期的なパターンに非周期的なパターンを付加する場合にも上記のパターン形成方法が適用可能である。
なお、上記の実施形態で製造対象のデバイスは、SRAM以外のDRAM、CPU、DSP等の任意の半導体デバイスが可能である。さらに、半導体デバイス以外の撮像素子、MEMS(Microelectromechanical Systems)等の電子デバイス(マイクロデバイス)を製造する際にも上記の実施形態のパターン形成方法が適用可能である。
なお、本発明は上述の実施形態に限定されず、本発明の要旨を逸脱しない範囲で種々の構成を取り得る。
Claims (20)
- パターン形成方法であって、
基板上に第1ラインパターンを有する第1パターンを形成し、
前記第1パターンを覆うように第1薄膜を形成し、
前記第1薄膜上に、前記第1ラインパターンに交差する方向に伸びる第2ラインパターンを有する第2パターンを形成し、
前記第2パターンを覆うように感光層を形成し、
前記第2パターンの少なくとも一部と重なるように、前記感光層に第1開口部を有する第3パターンを形成し、
前記感光層に形成された前記第3パターンの前記第1開口部を介して前記第1薄膜の一部を除去して、前記第1薄膜に第2開口部を形成し、
前記第1薄膜の前記第2開口部を介して前記第1パターンの一部を除去し、
前記第1薄膜及び前記第2パターンを除去する
ことを特徴とするパターン形成方法。 - 前記第1パターンは、第1方向に複数の前記第1ラインパターンが配列されたライン・アンド・スペースパターンを有し、
前記第2パターンは、前記第1方向に交差する第2方向に複数の前記第2ラインパターンが配列されたライン・アンド・スペースパターンを有することを特徴とする請求項1に記載のパターン形成方法。 - 前記第1パターン及び前記第2パターンを形成するときに、
それぞれ前記第1ラインパターン及び前記第2ラインパターンのピッチの2倍のピッチを持つ第4パターンを形成し、
前記第4パターンを用いて、前記第4パターンのピッチの1/2のピッチを持つライン・アンド・スペースパターンを形成することを特徴とする請求項2に記載のパターン形成方法。 - 前記感光層の前記第1開口部は、前記第2パターンの1つのスペース部の少なくとも一部を含む大きさであることを特徴とする請求項2又は請求項3に記載のパターン形成方法。
- 前記感光層に形成された前記第1開口部は、前記第2パターンのうち、互いに隣接する2つのスペース部の少なくとも一部を含む大きさの長穴を有し、
前記第2開口部は、前記互いに隣接する2つのスペース部に対応する位置に形成されることを特徴とする請求項2又は請求項3に記載のパターン形成方法。 - 前記第1薄膜と前記感光層との間に前記第2パターンを覆うように第2薄膜を形成し、
前記第1薄膜に前記第2開口部を形成するときに前記第2薄膜に第3開口部を形成し、
前記第1パターンの一部を除去するときに、前記第2薄膜の前記第3開口部、前記第2パターンのスペース部、及び前記第1薄膜の前記第2開口部を介して前記第1パターンのエッチングを行うことを特徴とする請求項2から請求項5のいずれか一項に記載のパターン形成方法。 - 前記基板上に前記第1パターンを形成するときに前記第1パターンのスペース部に第4薄膜を充填し、
前記第1薄膜及び前記第2パターンを除去した後、前記第1パターンの除去された部分に前記第4薄膜と同じ材料の薄膜を充填し、
前記第1パターンを除去することを特徴とする請求項2から請求項5のいずれか一項に記載のパターン形成方法。 - 前記第1薄膜中の前記第1パターンが除去された凹部に前記第1薄膜と異なる材料を充填することを特徴とする請求項7に記載のパターン形成方法。
- 前記第4薄膜は誘電率の小さい絶縁膜であることを特徴とする請求項7又は請求項8に記載のパターン形成方法。
- 前記第1薄膜は無機膜であり、前記第4薄膜は有機膜であることを特徴とする請求項7から請求項9のいずれか一項に記載のパターン形成方法。
- 前記第2パターンは、スペース部の幅が前記第2ラインパターンの幅より狭いライン・アンド・スペースパターンを有し、
前記感光層の前記第1開口部は、前記第2パターンのうち、互いに隣接する2つのスペース部の少なくとも一部を覆う大きさの長穴を有することを特徴とする請求項1又は請求項2に記載のパターン形成方法。 - 前記第1薄膜を覆うように前記第2パターンを形成するときに、前記第1薄膜上にライン・アンド・スペースパターンを有する第4パターンを形成し、前記第4パターンのラインパターン又はスペース部の幅を前記第4パターンのピッチの1/2より太くすることを特徴とする請求項11に記載のパターン形成方法。
- パターン形成方法であって、基板上に所定方向に交互に配列した複数の第1ラインと第1スペースを有する第1ライン・アンド・スペースパターンを形成し;その第1ライン・アンド・スペースパターン上に前記所定方向と交差する方向に交互に配列した複数の第2ラインと第2スペースを有する第2ライン・アンド・スペースパターンを形成し;第1ライン・アンド・スペースパターンの複数の第1ラインと第2ライン・アンド・スペースパターンの複数の第2スペースが重なる複数の重複領域に存在する第1ラインの一部の領域を、該第1ラインの一部の領域を区画する一対の第2ラインをマスクとしてエッチングして除去し;第2ライン・アンド・スペースパターンを除去することにより、第1ライン・アンド・スペースパターンの第1ラインの一部が除去された非周期のライン・アンド・スペースパターンを形成するパターン形成方法。
- 第1ライン・アンド・スペースパターンを形成した後に、第1ライン・アンド・スペースパターンを覆う保護層を形成し、該保護層の上に第2ライン・アンド・スペースパターンを形成し、前記複数の重複領域の第1ラインの一部の領域に相当する前記保護層の領域を除去し、該保護層の除去された領域を通じて該第1ラインの一部の領域をエッチングにより除去する請求項13に記載のパターン形成方法。
- 第1ライン・アンド・スペースパターンを形成する際に、前記所定方向に配列した遮光ラインパターンを有する第1のマスク板を用い、第2ライン・アンド・スペースパターンを形成する際に、前記所定方向と交差する方向に配列した遮光ラインパターンを有する第2のマスク板を用い、前記重複領域の一部の領域を除去する際に、前記重複領域の一部の領域を含む領域に光照射可能な光透過部を有する第3のマスク板を用いる請求項13または14に記載のパターン形成方法。
- スペーサ・ダブルパターニング法により、第1ライン・アンド・スペースパターン及び第2ライン・アンド・スペースパターンを形成する請求項13~15のいずれか一項に記載のパターン形成方法。
- 前記パターンが所定の解像限界を有する露光装置により形成され、前記除去された第1ライン・アンド・スペースパターンのラインの一部は、前記解像限界未満の線幅を有する請求項13~16のいずれか一項に記載のパターン形成方法。
- 局所液浸法により基板を露光することにより前記非周期のライン・アンド・スペースパターンを形成する請求項13~17のいずれか一項に記載のパターン形成方法。
- 請求項1から請求項17のいずれか一項に記載のパターン形成方法を用いて基板上に所定のパターンの一部を除去したパターンを形成する工程を含むデバイス製造方法。
- 前記基板上に形成されるパターンは、周期的パターンの一部を除去したパターンである請求項19に記載のデバイス製造方法。
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