WO2012026516A1 - Element-containing package and module provided therewith - Google Patents

Element-containing package and module provided therewith Download PDF

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Publication number
WO2012026516A1
WO2012026516A1 PCT/JP2011/069145 JP2011069145W WO2012026516A1 WO 2012026516 A1 WO2012026516 A1 WO 2012026516A1 JP 2011069145 W JP2011069145 W JP 2011069145W WO 2012026516 A1 WO2012026516 A1 WO 2012026516A1
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WO
WIPO (PCT)
Prior art keywords
metal substrate
input
brazing material
storage package
output member
Prior art date
Application number
PCT/JP2011/069145
Other languages
French (fr)
Japanese (ja)
Inventor
藤原　宏信
Original Assignee
京セラ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 京セラ株式会社 filed Critical 京セラ株式会社
Publication of WO2012026516A1 publication Critical patent/WO2012026516A1/en

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4256—Details of housings
    • G02B6/4262—Details of housings characterised by the shape of the housing
    • G02B6/4265—Details of housings characterised by the shape of the housing of the Butterfly or dual inline package [DIP] type
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4274—Electrical aspects
    • G02B6/4279—Radio frequency signal propagation aspects of the electrical connection, high frequency adaptations
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4274—Electrical aspects
    • G02B6/428—Electrical aspects containing printed circuit boards [PCB]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/047—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being parallel to the base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates to an element storage package for storing a semiconductor element such as an optical semiconductor element typified by LD (laser diode) and PD (photodiode), and a module including the same.
  • a semiconductor element such as an optical semiconductor element typified by LD (laser diode) and PD (photodiode)
  • LD laser diode
  • PD photodiode
  • a package described in Patent Document 1 is known as an element storage package for storing semiconductor elements (hereinafter also simply referred to as a package).
  • the package described in Patent Document 1 includes an input / output member inserted between a flat substrate and a frame body disposed on the upper surface of the substrate.
  • the input / output member is bonded and fixed to the substrate via a brazing material.
  • the input / output member includes an insulating base and a plurality of wiring conductors disposed on the top surface of the base.
  • the semiconductor element is electrically connected to external wiring via these wiring conductors.
  • a brazing material reservoir is formed so as to be in contact with the side surface of the input / output member inside the input / output member when the input / output member is viewed in plan. Therefore, part of the brazing material that joins the substrate and the input / output member also adheres to the side surface of the ceramic base constituting the input / output member. When the height of the input / output member is reduced, the brazing material may adhere not only to the side surface of the ceramic substrate but also to the upper surface. Therefore, there is a possibility that a plurality of wiring conductors disposed on the upper surface of the ceramic substrate are electrically short-circuited. JP 2003-204107 A
  • An element storage package includes a metal substrate having a placement area on which a semiconductor element is placed on an upper surface, and an upper surface of the metal substrate so as to surround the placement area.
  • the said metal substrate has the recessed part formed in the part enclosed with the said frame on the upper surface at least in the part which overlaps with the peripheral part of the said input-output member up and down.
  • FIG. 2 is a plan view of the element storage package shown in FIG. 1.
  • FIG. 3 is an enlarged cross-sectional view showing the vicinity of an input / output member in the AA cross section of the element storage package shown in FIG. 2.
  • FIG. 10 is an enlarged cross-sectional view showing a first modification of the element storage package shown in FIG. 3.
  • FIG. 10 is an enlarged cross-sectional view showing a second modification of the element storage package shown in FIG. 3.
  • FIG. 10 is an enlarged cross-sectional view showing a third modification of the element storage package shown in FIG. 3.
  • FIG. 10 is an enlarged cross-sectional view showing a fifth modification of the element storage package shown in FIG. 3.
  • the element storage package according to the present invention can include arbitrary constituent members not shown in the drawings referred to in this specification.
  • the dimension of the member in each figure does not represent the dimension of an actual structural member, the dimension ratio of each member, etc. faithfully.
  • the element storage package 1 has a metal substrate 5 having a placement region 5a on which the semiconductor element 3 is placed on the top surface, and a metal substrate 5 on the top surface.
  • the frame body 7 disposed so as to surround the placement region 5a, the input / output member 9 inserted between the metal substrate 5 and the frame body 7, and the metal substrate 5 and the input / output member 9 are positioned between, A brazing material 11 for joining the metal substrate 5 and the input / output member 9 is provided.
  • the input / output member 9 has a ceramic substrate 13 and a plurality of wiring conductors 15 disposed between the metal substrate 5 and the frame body 7 and disposed on the upper surface of the ceramic substrate 13.
  • the metal substrate 5 has the recessed part 17 formed in the area
  • the metal substrate 5 has a recess 17 formed in a region surrounded by the frame 7 on the upper surface thereof and at least overlapping with the peripheral portion of the ceramic base 13.
  • the metal substrate 5 has better wettability to the brazing material than the ceramic base 13 constituting the input / output member 9. Therefore, even if the brazing material 11 that joins the metal substrate 5 and the ceramic base 13 protrudes from these joining portions, the brazing material 11 spreads wet on the surface of the metal substrate 5. Therefore, the possibility that the brazing material 11 spreads on the surface of the ceramic substrate 13 can be reduced.
  • the concave portion 17 can be used as a brazing material reservoir, it is possible to suppress the brazing material 11 from spreading excessively on the surface of the metal substrate 5 or flowing the brazing material 11 to an unexpected position.
  • the concave portion 17 since the concave portion 17 is formed, the distance between the metal substrate 5 and the surface (lower surface) of the ceramic base 13 can be increased. Therefore, the possibility that the brazing material 11 spreading wet on the surface of the metal substrate 5 simultaneously spreads on the surface (lower surface) of the ceramic substrate 13 can be reduced.
  • the concave portion 17 is formed in a region surrounded by the frame 7 on the upper surface of the metal substrate 5 and at least overlapping with the peripheral portion of the input / output member 9 in the vertical direction.
  • the concave portion 17 is formed so as to surround the input / output member 9 when viewed in plan.
  • a concave portion 17 is formed in a portion that overlaps the entire peripheral portion of the input / output member 9 in the vertical direction.
  • the concave portion 17 is formed in a portion overlapping the entire peripheral portion of the ceramic base 13 in the vertical direction. Therefore, it is possible to reduce the possibility that the brazing material 11 that joins the metal substrate 5 and the input / output member 9 excessively travels along the lower surface of the ceramic substrate 13 and spreads on the side surface of the ceramic substrate 13. As a result, since the possibility that the brazing material 11 adheres to the upper surface of the ceramic base 13 is reduced, the possibility that the plurality of wiring conductors 15 disposed on the upper surface of the ceramic base 13 are electrically short-circuited can be reduced.
  • the metal substrate 5 in the present embodiment has a square plate shape and has a placement region 5a on which the semiconductor element 3 is placed.
  • the placement region 5a means a region that overlaps the semiconductor element 3 when the metal substrate 5 is viewed in plan.
  • the size of the square plate portion can be set to, for example, 10 mm to 100 mm on a side. Moreover, as thickness of the metal substrate 5, it can set to 0.5 mm or more and 2 mm or less, for example.
  • the placement area 5a is formed at the center of the upper surface, but the area where the semiconductor element 3 is placed is referred to as the placement area 5a. Therefore, for example, there is no problem even if the placement region 5 a is formed at the end of the upper surface of the metal substrate 5.
  • the metal substrate 5 may have a plurality of placement regions 5a, and the semiconductor element 3 may be placed on each placement region 5a.
  • the brazing material 11 joining the metal substrate 5 and the input / output member 9 it is possible to prevent the brazing material 11 joining the metal substrate 5 and the input / output member 9 from being excessively attached to the side surface of the ceramic base 13, in other words, the brazing material 11 on the upper surface of the ceramic base 13. Any shape may be used as long as the brazing material 11 can be stored to such an extent that the adhesion of the solder can be suppressed.
  • the bottom surface and two side surfaces positioned so as to sandwich the bottom surface may be used.
  • the boundary portion between the bottom surface and the side surface has a curved surface shape. This is because when the brazing material 11 accumulates in the recess 17, it is possible to suppress local concentration of stress applied to the metal substrate 5 due to expansion and contraction of the brazing material 11.
  • the corner of the opening edge of the concave portion 17 is not a bent shape but a curved shape.
  • the shape of the concave portion 17 shown in FIGS. 5 and 6 is a shape in which the two side surfaces are not parallel and the width increases toward the opening. In such a case, the influence of the stress applied to the metal substrate 5 due to expansion and contraction of the brazing material 11 when the brazing material 11 accumulates in the recess 17 can be reduced.
  • the brazing material 11 when the brazing material 11 is accumulated in the recess 17 so as to be in contact with both side surfaces, the brazing material 11 easily expands and contracts above the metal substrate 5. Therefore, stress applied in a direction parallel to the upper surface of the metal substrate 5 due to expansion and contraction of the brazing material 11 can be dispersed in a direction perpendicular to the upper surface of the metal substrate 5.
  • the depth D of the concave portion 17 can be set to 0.1 mm or more and 1.5 mm or less, for example. Further, the depth D of the concave portion 17 is preferably larger than the thickness T of the brazing material 11 located between the metal substrate 5 and the ceramic base 13. Thereby, even if a part of the brazing material 11 protrudes from between the metal substrate 5 and the input / output member 9, the brazing material 11 can be stably stored in the recess 17. Therefore, the possibility that the brazing material 11 adheres to the upper surface of the ceramic base 13 is reduced. As a result, the possibility that the plurality of wiring conductors 15 disposed on the upper surface of the ceramic substrate 13 are electrically short-circuited can be further reduced.
  • the depth D of the concave portion 17 is preferably 10 to 50% with respect to the thickness of the metal substrate 5.
  • the brazing material 11 can be stably stored in the recess 17.
  • the portion of the metal substrate 5 located below the recess 17 has a relatively small thickness.
  • the ratio is 50% or less, the portion having the relatively small thickness is also used. A sufficient thickness of the metal substrate 5 can be ensured. As a result, it can suppress that durability of the metal substrate 5 falls excessively.
  • the width W1 in the first direction of the recess 17 is larger than the width W2 of the input / output member 9 in the first direction.
  • the brazing material 11 overlaps the concave portion 17 in the vertical direction. As shown in FIG. 3, since the brazing material 11 is positioned so that at least a part of the brazing material 11 overlaps with the concave portion 17, even if the brazing material 11 protrudes from the joining portion, It can flow reliably and can be stored in the recess 17. Therefore, it is possible to further suppress the brazing material 11 joining the metal substrate 5 and the input / output member 9 from being excessively attached to the side surface of the ceramic base 13.
  • the recess 17 may be formed in a region surrounded by the frame body 7 and in a portion overlapping only the peripheral portion of the ceramic base 13, but is formed as shown in FIG. 3. It is preferable. That is, the concave portion 17 is preferably formed so as to overlap vertically with the entire ceramic base 13 in the region surrounded by the frame body 7.
  • the concave portion 17 When the concave portion 17 is formed in this way, the possibility that the brazing material 11 spreads wet on the lower surface of the input / output member 9 in the region surrounded by the frame body 7 can be reduced. Therefore, the possibility that the brazing material 11 spreads on the side surface of the input / output member 9 in the region surrounded by the frame body 7 can be reduced. As a result, the possibility that the plurality of wiring conductors 15 are electrically short-circuited can be further reduced.
  • the recess 17 may have a stepped portion 17 a between the bottom surface and the side surface of the metal substrate 5 on the side close to the placement region 5 a. Similar to the shape of the concave portion 17 shown in FIGS. 5 and 6, when the brazing material 11 is accumulated in the concave portion 17, the influence of the stress applied to the metal substrate 5 due to the expansion and contraction of the brazing material 11 is reduced. can do. Moreover, the rigidity in the mounting area 5a, which is reduced by providing the concave portion 17 on the metal substrate 5, is increased.
  • the stepped portion 17 a is located inside the input / output member 9. In other words, it is preferable that the stepped portion 17a does not overlap the input / output member 9 vertically. In such a case, the peripheral edge portion of the lower surface of the ceramic substrate 13 faces the bottom surface of the recess 17. Therefore, it can suppress that the space
  • the package 1 according to the present embodiment is mounted on which the metal substrate 5 is mounted so that the metal substrate 5 extends outside the frame body 7 when the metal substrate 5 is viewed in plan. It has the screwing part 19 screwed to a board
  • the screwing portion 19 is located on an extension in the direction in which the screwing portion 19 of the recess 17 extends. Specifically, when the direction in which the screwing portion 19 of the metal substrate 5 extends is the second direction, the recess 17 and the screwing portion 19 are each extended in the second direction, as indicated by the region X, as shown in FIG. It is preferable that the concave portion 17 and the screwing portion 19 partially overlap.
  • the portion of the metal substrate 5 that is located below the recess 17 is relatively thin and thus is easily elastically deformed. Since the portion that is easily elastically deformed in the metal substrate 5 is located at the point where the pressing force is transmitted, the pressing force can be relaxed in the concave portion 17.
  • the metal substrate 5 is composed of a plate-shaped metal member. Specifically, a metal material such as iron, copper, nickel, chromium, cobalt, or tungsten, or an alloy made of these metals can be used as the metal member. A plate-like metal member constituting the metal substrate 5 can be produced by subjecting such a metal member ingot to a metal working method such as a rolling method or a punching method.
  • the metal substrate 5 may be constituted by a single metal member or may be constituted by laminating a plurality of metal members.
  • a recess 17 is formed by partially cutting at least a portion of the upper surface of the metal substrate 5 thus manufactured, which is surrounded by the frame 7 and overlaps at least with the peripheral portion of the ceramic base 13. can do. Further, for example, when the metal substrate 5 is configured by laminating a plurality of metal members, the concave portion 17 may be formed by providing a through hole in the metal member located at the top.
  • the frame body 7 is provided on the upper surface of the metal substrate 5 so as to surround the placement area 5a when viewed in plan.
  • the frame body 7 has through holes that open to the inner peripheral surface and the outer peripheral surface.
  • a cylindrical fixing member 21 to which the optical fiber 29 is fixed is inserted and fixed in the through hole.
  • the through hole can be formed in the frame body 7 by, for example, drilling.
  • the outer periphery can be set to 10 mm or more and 100 mm or less on a side.
  • the thickness of the frame 7 can be set to 0.5 mm or more and 2 mm or less, for example.
  • a metal member such as iron, copper, nickel, chromium, cobalt or tungsten, or an alloy made of these metals can be used.
  • the frame body 7 can be produced by subjecting such an ingot of a metal member to a metal processing method such as a rolling method or a punching method.
  • a ceramic member such as an aluminum oxide sintered body, a mullite sintered body, a silicon carbide sintered body, an aluminum nitride sintered body, or a silicon nitride sintered body may be used.
  • the frame body 7 may be composed of one member, but may be a laminated structure of a plurality of members.
  • the frame body 7 is bonded to the metal substrate 5 via a bonding member located between the metal substrate 5 and the frame body 7.
  • An exemplary joining member includes silver wax.
  • the input / output member 9 includes a ceramic base 13 (first ceramic base 13) and a plurality of wiring conductors 15 disposed on the upper surface of the first ceramic base 13.
  • a plurality of wiring conductors 15 are disposed on the upper surface of the first ceramic base 13. Signals can be input / output between the semiconductor element 3 and external wiring (not shown) via these wiring conductors 15. As described above, since the wiring conductor 15 is disposed on the upper surface of the first ceramic base 13, the first ceramic base 13 is required to have high insulation.
  • a ceramic material such as an aluminum oxide sintered body, a mullite sintered body, a silicon carbide sintered body, an aluminum nitride sintered body or a silicon nitride sintered body, Alternatively, a glass ceramic material can be used.
  • the size of the first ceramic base 13 can be set, for example, such that the long side of the upper surface is 5 mm or more and 50 mm or less. . Moreover, the short side of the upper surface can be set to 1 mm or more and 10 mm or less. Moreover, as thickness of the 1st ceramic base
  • the first ceramic base 13 and the second ceramic base body 23 between the wiring conductor 15 and the frame body 7 are provided to ensure insulation of the wiring conductor 15 with respect to the frame body 7. It is preferable that it is disposed.
  • the second ceramic substrate 23 for example, an aluminum oxide sintered body, a mullite sintered body, a silicon carbide sintered body, an aluminum nitride sintered body, or silicon nitride is used in the same manner as the first ceramic substrate 13.
  • a ceramic material such as a sintered material, or a glass ceramic material can be used.
  • a metal layer such as a metallized layer is formed on the lower surface of the ceramic substrate 13. This is because the wettability of the input / output terminal 9 with respect to the brazing material 11 can be improved.
  • a metal layer is not formed in a peripheral edge portion of the lower surface of the ceramic base 13 and located in a region surrounded by the frame body 7 when viewed in plan. This is to reduce the possibility that the brazing material 11 spreads on the side surface of the ceramic base 13 through the surface of the metal layer.
  • the frame body 7 has a peripheral portion on the lower surface of the ceramic base 13 when viewed in plan.
  • a configuration in which a metal layer is not formed in a portion located in the enclosed region can be achieved. In such a case, it is possible to reduce the possibility that the brazing material 11 spreads on the side surface of the ceramic substrate 13 while improving the bonding property between the metal substrate 5 and the ceramic substrate 13.
  • the width W3 of the brazing material 11 may be larger than the thickness W4 of the frame 7 as shown in FIG. preferable.
  • the width W3 of the brazing material 11 is larger than the thickness W4 of the frame body 7, the bondability between the metal substrate 5 and the input / output member 9 and the airtightness of the package 1 can be improved.
  • the brazing material 11 for joining the metal substrate 5 and the ceramic base 13 may be excessively attached to the side surface of the ceramic base 13.
  • the brazing material 11 that joins the metal substrate 5 and the input / output member 9 is excessively attached to the side surface of the ceramic substrate 13. The possibility of doing can be reduced.
  • the plurality of wiring conductors 15 are located from the inside to the outside of the region surrounded by the frame body 7. Thereby, electrical connection can be achieved between the inside and the outside of the region surrounded by the frame body 7.
  • the plurality of wiring conductors 15 are arranged at predetermined intervals so as not to be electrically short-circuited with each other.
  • the wiring conductor 15 it is preferable to use a member having good conductivity. Specifically, a metal material such as tungsten, molybdenum, nickel, copper, silver, or gold can be used as the wiring conductor 15. The above metal materials may be used alone or as an alloy.
  • the wiring conductor 15 is a member for electrically connecting an external wiring (not shown) and the semiconductor element 3 via the lead terminal 25 or the like. Therefore, although the wiring conductor 15 in this embodiment is arrange
  • the first ceramic base 13 made of an insulating member is provided between the wiring conductors 15 in the embedded portion. Will exist. Therefore, the insulation between the plurality of wiring conductors 15 can be improved.
  • a part of the wiring conductor 15 is embedded in the first ceramic base 13, a portion where the wiring conductor 15 is pulled out from the side surface of the first ceramic base 13 and is exposed on the side surface of the metal substrate 5.
  • the lead terminal 25 may be electrically connected.
  • the lead terminal 25 it is preferable to use a member having good conductivity like the wiring conductor 15. Specifically, a metal material such as tungsten, molybdenum, nickel, copper, silver, or gold can be used as the lead terminal 25. The above metal materials may be used alone or as an alloy.
  • the package 1 of the present embodiment has a plurality of input / output members 9, and each input / output member 9 is inserted and fixed between the metal substrate 5 and the frame body 7.
  • the package 1 of this embodiment has a plurality of ceramic bases 13, and each ceramic base 13 is inserted and fixed between the metal substrate 5 and the frame body 7.
  • the metal substrate 5 has the recessed part 17 each formed in the area
  • the brazing material 11 for joining the metal substrate 5 and the respective input / output members 9 is formed in the portion where the ceramic base 13 and the metal substrate 5 overlap each other in the vertical direction. Excessive adhesion to the side surface of each ceramic substrate 13 can be suppressed.
  • the depths of these recesses 17 are equal.
  • the variation in the depth of the concave portion 17 is large, the stress tends to concentrate on a part of the metal substrate 5.
  • the depths of the recesses 17 are equal, variations in stress applied to the portion of the metal substrate 5 located below the respective recesses 17 can be reduced. As a result, the durability of the metal substrate 5 can be improved.
  • the package 1 of the present embodiment includes a mounting substrate 27 for mounting the semiconductor element 3 disposed on the mounting region 5a.
  • the semiconductor element 3 may be mounted directly on the metal substrate 5
  • the mounting board 27 is provided as in the package 1 of the present embodiment, and the semiconductor element 3 is mounted on the mounting board 27. It is preferable to be placed. This is because the insulation of the semiconductor element 3 with respect to the metal substrate 5 can be secured.
  • an optical semiconductor element is used as the semiconductor element 3 it is possible to reduce a deviation in height between the optical semiconductor element and a fixing member 21 described later. Therefore, the optical coupling of the semiconductor element 3 to the optical fiber 29 can be facilitated.
  • the mounting substrate 27 it is preferable to use a member having good insulating properties.
  • a member having good insulating properties For example, an aluminum oxide sintered body, a mullite sintered body, a silicon carbide sintered body, an aluminum nitride sintered body, or silicon nitride is used.
  • a ceramic material such as a sintered material, or a glass ceramic material can be used.
  • the package 1 of the present embodiment includes a cylindrical fixing member 21 to which the optical fiber 29 is fixed. More specifically, as shown in FIGS. 1 to 3, the fixing member 21 is fixed to the frame body 7 so that one end is positioned inside the frame body 7 and the other end is positioned outside the frame body 7. Has been. Specifically, the fixing member 21 is inserted and fixed in a through hole provided in the frame body 7. Therefore, the fixing member 21 is separated from the metal substrate 5 by a predetermined distance.
  • the fixing member 21 fixes and positions the optical fiber 29 and has a cylindrical shape, so that light is transmitted between the optical semiconductor element and the optical fiber 29 in the cylindrical hollow portion. It can be performed.
  • the fixing member 21 is fixed to the frame body 7 by a second bonding member located between the frame body 7 and the fixing member 21.
  • the fixing member 21 has a strength that can at least fix the optical fiber 29.
  • a metal member such as iron, copper, nickel, chromium, cobalt, or tungsten, or an alloy made of these metals can be used.
  • the cylindrical fixing member 21 can be produced by subjecting such an ingot of a metal member to a metal processing method such as a rolling method or a punching method.
  • the frame body 7 and the fixing member 21 are formed using the same metal member. This is because the difference in thermal expansion between the frame body 7 and the fixing member 21 can be reduced. Thereby, the stress which arises between the frame 7 and the fixing member 21 can be made small.
  • the concave portion 17 is formed in a region of the metal substrate 5 located below the through hole of the frame body 7 in which the fixing member 21 is inserted and fixed. Therefore, even when a part of the second joining member flows out between the frame body 7 and the fixing member 21, the second joining member can also be stored in the recess 17.
  • the module 31 of this embodiment is joined to the element housing package 1 typified by the above embodiment, the semiconductor element 3 placed in the placement area 5 a of the element housing package 1, and the frame body 7.
  • a lid 33 that seals the semiconductor element 3 is provided.
  • an optical semiconductor element is placed as the semiconductor element 3 in the placement area 5 a of the metal substrate 5. Further, the semiconductor element 3 is electrically connected to the wiring conductor 15 through a conductive wire. A desired output can be obtained from the semiconductor element 3 by inputting an external signal to the semiconductor element 3 via the external wiring, the wiring conductor 15 and the conducting wire.
  • optical semiconductor element examples include a light emitting element that emits light to the optical fiber 29 typified by an LD element, and a light receiving element that receives light to the optical fiber 29 typified by a PD element. It is done.
  • the semiconductor element 3 can be electrically connected to the wiring conductor 15 by, for example, so-called wire bonding via a conducting wire.
  • the semiconductor element 3 may be electrically connected to the wiring conductor 15 by so-called flip chip.
  • the wiring conductor 15 may be extended just below the semiconductor element 3, and the semiconductor element 3 may be joined to the wiring conductor 15 via a conductive adhesive such as the brazing material 11.
  • the lid body 33 is joined to the frame body 7 so as to seal the semiconductor element 3.
  • the lid body 33 is joined to the upper surface of the frame body 7.
  • the semiconductor element 3 is sealed in a space surrounded by the metal substrate 5, the frame body 7, and the lid body 33.
  • the lid 33 for example, a metal member such as iron, copper, nickel, chromium, cobalt, or tungsten, or an alloy made of these metals can be used.
  • the frame body 7 and the lid body 33 can be joined by, for example, a seam welding method. Further, the frame body 7 and the lid body 33 may be joined using, for example, gold-tin solder.

Abstract

An element-containing package based on one of the aspects of the present invention is provided with: a metal substrate, the top surface of which has a placement region in which a semiconductor element is placed; a frame provided on the top surface of the metal substrate so as to surround said placement region; an I/O member that is inserted between the metal substrate and the frame and comprises a ceramic substrate and a plurality of wiring conductors provided on the top surface of said ceramic substrate; and a brazing material that is located between the metal substrate and the I/O member and joins said metal substrate and I/O member. The metal substrate has a recess formed in an area that is inside the region surrounded by the frame on the top surface and, at least, vertically overlaps the periphery of the I/O member.

Description

素子収納用パッケージおよびこれを備えたモジュールDevice storage package and module including the same
　本発明は、ＬＤ（レーザダイオード）、ＰＤ（フォトダイオード）に代表される光半導体素子のような半導体素子を収納する素子収納用パッケージおよびこれを備えたモジュールに関する。 The present invention relates to an element storage package for storing a semiconductor element such as an optical semiconductor element typified by LD (laser diode) and PD (photodiode), and a module including the same.
　半導体素子を収納する素子収納用パッケージ（以下、単にパッケージとも言う）としては、特許文献１に記載されたパッケージが知られている。特許文献１に記載されたパッケージは、平板形状の基板と基板の上面に配設された枠体との間に挿入された入出力部材を備えている。入出力部材は、ロウ材を介して基板に接合固定されている。また、入出力部材は、絶縁性の基体およびこの基体の上面に配設された複数の配線導体を備えている。半導体素子は、これらの配線導体を介して外部配線に電気的に接続される。 A package described in Patent Document 1 is known as an element storage package for storing semiconductor elements (hereinafter also simply referred to as a package). The package described in Patent Document 1 includes an input / output member inserted between a flat substrate and a frame body disposed on the upper surface of the substrate. The input / output member is bonded and fixed to the substrate via a brazing material. The input / output member includes an insulating base and a plurality of wiring conductors disposed on the top surface of the base. The semiconductor element is electrically connected to external wiring via these wiring conductors.
　パッケージ本体を構成する基体を枠体に接合する際および入出力部材を基板と枠体との間に挿入固定する際、これらの部材はそれぞれロウ材のような接合部材を介して接合される。近年、素子収納用パッケージとしては小型集積化が要求されていることから、素子収納用パッケージの低背化が進んでいる。そのため、素子収納用パッケージを構成する入出力部材の低背化もまた進んでいる。 When joining the base body constituting the package body to the frame body and when the input / output member is inserted and fixed between the substrate and the frame body, these members are respectively joined via a joining member such as a brazing material. In recent years, since the element storage package is required to be integrated in a small size, the height of the element storage package has been reduced. For this reason, the reduction in height of the input / output members constituting the element storage package is also progressing.
　しかしながら、特許文献１に記載のパッケージにおいては、入出力部材を平面視した場合における入出力部材よりも内側において入出力部材の側面と接するようにロウ材溜まりが形成される。そのため、基板と入出力部材とを接合するロウ材の一部が入出力部材を構成するセラミック基体の側面にも付着する。そして、入出力部材の低背化が進んだ場合、セラミック基体の側面だけでなく上面にもロウ材が付着する可能性がある。そのため、セラミック基体の上面に配設された複数の配線導体が電気的に短絡する可能性がある。
特開２００３－２０４１０７号公報 However, in the package described in Patent Document 1, a brazing material reservoir is formed so as to be in contact with the side surface of the input / output member inside the input / output member when the input / output member is viewed in plan. Therefore, part of the brazing material that joins the substrate and the input / output member also adheres to the side surface of the ceramic base constituting the input / output member. When the height of the input / output member is reduced, the brazing material may adhere not only to the side surface of the ceramic substrate but also to the upper surface. Therefore, there is a possibility that a plurality of wiring conductors disposed on the upper surface of the ceramic substrate are electrically short-circuited.
JP 2003-204107 A
　本発明の一つの態様に基づく素子収納用パッケージは、上面に半導体素子が載置される載置領域を有する金属基板と、該金属基板の上面に前記載置領域を囲むように配設された枠体と、前記金属基板および前記枠体の間に挿入された、セラミック基体および該セラミック基体の上面に配設された複数の配線導体を有する入出力部材と、前記金属基板および前記入出力部材の間に位置して、前記金属基板および前記入出力部材を接合するロウ材とを備えている。そして、前記金属基板が、上面における前記枠体で囲まれた領域内であって少なくとも前記入出力部材の周縁部分と上下に重なり合う部分に形成された凹部を有していることを特徴としている。 An element storage package according to one aspect of the present invention includes a metal substrate having a placement area on which a semiconductor element is placed on an upper surface, and an upper surface of the metal substrate so as to surround the placement area. A frame, an input / output member having a plurality of wiring conductors disposed on an upper surface of the ceramic base, and the metal substrate and the input / output member, inserted between the metal substrate and the frame. And a brazing material for joining the metal substrate and the input / output member. And the said metal substrate has the recessed part formed in the part enclosed with the said frame on the upper surface at least in the part which overlaps with the peripheral part of the said input-output member up and down.
第１の実施形態にかかる素子収納用パッケージおよびこれを備えたモジュールを示す斜視図である。It is a perspective view which shows the element storage package concerning 1st Embodiment, and a module provided with the same. 図１に示す素子収納用パッケージの平面図である。FIG. 2 is a plan view of the element storage package shown in FIG. 1. 図２に示す素子収納用パッケージのＡ－Ａ断面における入出力部材の近傍を示す拡大断面図である。FIG. 3 is an enlarged cross-sectional view showing the vicinity of an input / output member in the AA cross section of the element storage package shown in FIG. 2. 図３に示す素子収納用パッケージの第１の変形例を示す拡大断面図である。FIG. 10 is an enlarged cross-sectional view showing a first modification of the element storage package shown in FIG. 3. 図３に示す素子収納用パッケージの第２の変形例を示す拡大断面図である。FIG. 10 is an enlarged cross-sectional view showing a second modification of the element storage package shown in FIG. 3. 図３に示す素子収納用パッケージの第３の変形例を示す拡大断面図である。FIG. 10 is an enlarged cross-sectional view showing a third modification of the element storage package shown in FIG. 3. 図３に示す素子収納用パッケージの第４の変形例を示す拡大断面図である。It is an expanded sectional view which shows the 4th modification of the element storage package shown in FIG. 図３に示す素子収納用パッケージの第５の変形例を示す拡大断面図である。FIG. 10 is an enlarged cross-sectional view showing a fifth modification of the element storage package shown in FIG. 3.
　以下、本発明の実施形態にかかる素子収納用パッケージおよびこれを備えたモジュールについて、図面を用いて詳細に説明する。但し、以下で参照する各図は、説明の便宜上、実施形態の構成部材のうち、本発明を説明するために必要な主要部材のみを簡略化して示したものである。したがって、本発明に係る素子収納用パッケージは、本明細書が参照する各図に示されていない任意の構成部材を備え得る。また、各図中の部材の寸法は、実際の構成部材の寸法および各部材の寸法比率等を忠実に表したものではない。 Hereinafter, an element storage package according to an embodiment of the present invention and a module including the same will be described in detail with reference to the drawings. However, in the drawings referred to below, for convenience of explanation, among the constituent members of the embodiment, only the main members necessary for explaining the present invention are shown in a simplified manner. Therefore, the element storage package according to the present invention can include arbitrary constituent members not shown in the drawings referred to in this specification. Moreover, the dimension of the member in each figure does not represent the dimension of an actual structural member, the dimension ratio of each member, etc. faithfully.
　図１～３に示すように、第１の実施形態の素子収納用パッケージ１は、上面に半導体素子３が載置される載置領域５ａを有する金属基板５と、金属基板５の上面に載置領域５ａを囲むように配設された枠体７と、金属基板５および枠体７の間に挿入された入出力部材９と、金属基板５および入出力部材９の間に位置して、金属基板５および入出力部材９を接合するロウ材１１とを備えている。 As shown in FIGS. 1 to 3, the element storage package 1 according to the first embodiment has a metal substrate 5 having a placement region 5a on which the semiconductor element 3 is placed on the top surface, and a metal substrate 5 on the top surface. The frame body 7 disposed so as to surround the placement region 5a, the input / output member 9 inserted between the metal substrate 5 and the frame body 7, and the metal substrate 5 and the input / output member 9 are positioned between, A brazing material 11 for joining the metal substrate 5 and the input / output member 9 is provided.
　入出力部材９は、金属基板５および枠体７の間に挿入された、セラミック基体１３およびセラミック基体１３の上面に配設された複数の配線導体１５を有している。そして、金属基板５が、その上面における枠体７で囲まれた領域内であって少なくとも入出力部材９の周縁部分と上下に重なり合う部分に形成された凹部１７を有している。言い換えれば、金属基板５が、その上面における枠体７で囲まれた領域内であって少なくともセラミック基体１３の周縁部分と上下に重なり合う部分に形成された凹部１７を有している。 The input / output member 9 has a ceramic substrate 13 and a plurality of wiring conductors 15 disposed between the metal substrate 5 and the frame body 7 and disposed on the upper surface of the ceramic substrate 13. And the metal substrate 5 has the recessed part 17 formed in the area | region enclosed by the frame 7 in the upper surface at least in the part which overlaps with the peripheral part of the input-output member 9 up and down. In other words, the metal substrate 5 has a recess 17 formed in a region surrounded by the frame 7 on the upper surface thereof and at least overlapping with the peripheral portion of the ceramic base 13.
　入出力部材９を構成するセラミック基体１３よりも金属基板５の方がロウ材に対する濡れ性が良好である。そのため、金属基板５およびセラミック基体１３を接合するロウ材１１がこれらの接合箇所からはみ出したとしても、ロウ材１１が金属基板５の表面において濡れ広がる。従って、セラミック基体１３の表面をロウ材１１が濡れ広がる可能性を低減できる。 The metal substrate 5 has better wettability to the brazing material than the ceramic base 13 constituting the input / output member 9. Therefore, even if the brazing material 11 that joins the metal substrate 5 and the ceramic base 13 protrudes from these joining portions, the brazing material 11 spreads wet on the surface of the metal substrate 5. Therefore, the possibility that the brazing material 11 spreads on the surface of the ceramic substrate 13 can be reduced.
　このとき、この凹部１７をロウ材溜まりとして用いることができるので、ロウ材１１が金属基板５の表面を過度に濡れ広がる、或いは、予想外の位置にロウ材１１が流れることを抑制できる。加えて、上記の凹部１７が形成されていることによって、金属基板５とセラミック基体１３の表面（下面）との間隔を大きくできる。そのため、金属基板５の表面を濡れ広がるロウ材１１がセラミック基体１３の表面（下面）において同時に濡れ広がる可能性を低減できる。 At this time, since the concave portion 17 can be used as a brazing material reservoir, it is possible to suppress the brazing material 11 from spreading excessively on the surface of the metal substrate 5 or flowing the brazing material 11 to an unexpected position. In addition, since the concave portion 17 is formed, the distance between the metal substrate 5 and the surface (lower surface) of the ceramic base 13 can be increased. Therefore, the possibility that the brazing material 11 spreading wet on the surface of the metal substrate 5 simultaneously spreads on the surface (lower surface) of the ceramic substrate 13 can be reduced.
　さらに、凹部１７が、金属基板５の上面における枠体７で囲まれた領域内であって少なくとも入出力部材９の周縁部分と上下に重なり合う部分に形成されている。言い換えれば、金属基板５の上面における枠体７で囲まれた領域内において、平面視した場合に、入出力部材９を囲むように凹部１７が形成されている。上記の通り、金属基板５とセラミック基体１３の下面との間隔が大きくなることによって、ロウ材１１がセラミック基体１３の下面を濡れ広がる可能性が小さくなる。 Further, the concave portion 17 is formed in a region surrounded by the frame 7 on the upper surface of the metal substrate 5 and at least overlapping with the peripheral portion of the input / output member 9 in the vertical direction. In other words, in the region surrounded by the frame body 7 on the upper surface of the metal substrate 5, the concave portion 17 is formed so as to surround the input / output member 9 when viewed in plan. As described above, since the distance between the metal substrate 5 and the lower surface of the ceramic base 13 is increased, the possibility that the brazing material 11 spreads on the lower surface of the ceramic base 13 is reduced.
　本実施形態のパッケージ１においては、入出力部材９の周縁部分全体と上下に重なり合う部分に凹部１７が形成されている。言い換えれば、セラミック基体１３の周縁部分全体と上下に重なり合う部分に凹部１７が形成されている。そのため、金属基板５および入出力部材９を接合するロウ材１１が過度にセラミック基体１３の下面を伝ってセラミック基体１３の側面に濡れ広がる可能性を小さくできる。結果として、セラミック基体１３の上面にロウ材１１が付着する可能性が小さくなるので、セラミック基体１３の上面に配設された複数の配線導体１５が電気的に短絡する可能性を低減できる。 In the package 1 of the present embodiment, a concave portion 17 is formed in a portion that overlaps the entire peripheral portion of the input / output member 9 in the vertical direction. In other words, the concave portion 17 is formed in a portion overlapping the entire peripheral portion of the ceramic base 13 in the vertical direction. Therefore, it is possible to reduce the possibility that the brazing material 11 that joins the metal substrate 5 and the input / output member 9 excessively travels along the lower surface of the ceramic substrate 13 and spreads on the side surface of the ceramic substrate 13. As a result, since the possibility that the brazing material 11 adheres to the upper surface of the ceramic base 13 is reduced, the possibility that the plurality of wiring conductors 15 disposed on the upper surface of the ceramic base 13 are electrically short-circuited can be reduced.
　本実施形態における金属基板５は、四角板形状であって、上面に半導体素子３が載置される載置領域５ａを有している。なお、本実施形態において載置領域５ａとは、金属基板５を平面視した場合に半導体素子３と重なり合う領域を意味している。 The metal substrate 5 in the present embodiment has a square plate shape and has a placement region 5a on which the semiconductor element 3 is placed. In the present embodiment, the placement region 5a means a region that overlaps the semiconductor element 3 when the metal substrate 5 is viewed in plan.
　金属基板５が上記の通り平板形状である場合、その四角板形状の部分の大きさを、例えば一辺１０ｍｍ以上１００ｍｍ以下に設定することができる。また、金属基板５の厚みとしては、例えば、０．５ｍｍ以上２ｍｍ以下に設定することができる。 When the metal substrate 5 has a flat plate shape as described above, the size of the square plate portion can be set to, for example, 10 mm to 100 mm on a side. Moreover, as thickness of the metal substrate 5, it can set to 0.5 mm or more and 2 mm or less, for example.
　本実施形態においては載置領域５ａが上面の中央部に形成されているが、半導体素子３が載置される領域を載置領域５ａとしている。従って、例えば、金属基板５の上面の端部に載置領域５ａが形成されていても何ら問題ない。なお、金属基板５が複数の載置領域５ａを有し、それぞれの載置領域５ａに半導体素子３が載置されていてもよい。 In the present embodiment, the placement area 5a is formed at the center of the upper surface, but the area where the semiconductor element 3 is placed is referred to as the placement area 5a. Therefore, for example, there is no problem even if the placement region 5 a is formed at the end of the upper surface of the metal substrate 5. The metal substrate 5 may have a plurality of placement regions 5a, and the semiconductor element 3 may be placed on each placement region 5a.
　凹部１７の形状としては、金属基板５と入出力部材９とを接合するロウ材１１が過度にセラミック基体１３の側面に付着することを抑制できる、言い換えれば、セラミック基体１３の上面にロウ材１１が付着することを抑制できる程度にロウ材１１を溜めることができる形状であればよい。 As the shape of the concave portion 17, it is possible to prevent the brazing material 11 joining the metal substrate 5 and the input / output member 9 from being excessively attached to the side surface of the ceramic base 13, in other words, the brazing material 11 on the upper surface of the ceramic base 13. Any shape may be used as long as the brazing material 11 can be stored to such an extent that the adhesion of the solder can be suppressed.
　具体的には、例えば図３に示すように、凹部１７を断面視した場合に、底面およびこの底面を挟むように位置する２つの側面を有する構成であればよい。このとき、図４に示すように、底面と側面の境界部分が曲面形状であることが好ましい。凹部１７内にロウ材１１が溜まった場合に、ロウ材１１が膨張収縮することに起因して金属基板５に加わる応力が局所的に集中することを抑制できるからである。また、同様の理由から、図２に示すように、金属基板５を平面視した場合に、凹部１７の開口縁の角部が折れ曲がった形状ではなく、曲線形状であることが好ましい。 Specifically, for example, as shown in FIG. 3, when the concave portion 17 is viewed in cross section, the bottom surface and two side surfaces positioned so as to sandwich the bottom surface may be used. At this time, as shown in FIG. 4, it is preferable that the boundary portion between the bottom surface and the side surface has a curved surface shape. This is because when the brazing material 11 accumulates in the recess 17, it is possible to suppress local concentration of stress applied to the metal substrate 5 due to expansion and contraction of the brazing material 11. For the same reason, as shown in FIG. 2, when the metal substrate 5 is viewed in plan, it is preferable that the corner of the opening edge of the concave portion 17 is not a bent shape but a curved shape.
　また、凹部１７の形状としては、図５に示すように、２つの側面から構成されるＶ字形状、或いは、図６に示すように、底面における幅よりも開口部の幅の大きい台形形状であってもよい。図５および図６に示す凹部１７の形状は、２つの側面が平行ではなく、開口部に向かって幅が広がる形状である。このような場合には、凹部１７内にロウ材１１が溜まった際に、ロウ材１１が膨張収縮することに起因して金属基板５に加わる応力の影響を小さくすることができる。 Moreover, as the shape of the recessed part 17, as shown in FIG. 5, it is a V shape comprised from two side surfaces, or as shown in FIG. 6, the trapezoid shape whose width | variety of an opening part is larger than the width | variety in a bottom face. There may be. The shape of the concave portion 17 shown in FIGS. 5 and 6 is a shape in which the two side surfaces are not parallel and the width increases toward the opening. In such a case, the influence of the stress applied to the metal substrate 5 due to expansion and contraction of the brazing material 11 when the brazing material 11 accumulates in the recess 17 can be reduced.
　具体的には、ロウ材１１が両側面と接するように凹部１７内に溜まっている場合において、金属基板５の上方にロウ材１１が膨張収縮しやすくなる。そのため、ロウ材１１の膨張収縮に起因して金属基板５の上面に平行な方向に加わる応力を金属基板５の上面に垂直な方向に分散させることができる。 Specifically, when the brazing material 11 is accumulated in the recess 17 so as to be in contact with both side surfaces, the brazing material 11 easily expands and contracts above the metal substrate 5. Therefore, stress applied in a direction parallel to the upper surface of the metal substrate 5 due to expansion and contraction of the brazing material 11 can be dispersed in a direction perpendicular to the upper surface of the metal substrate 5.
　凹部１７の深さＤとしては、例えば、０．１ｍｍ以上１．５ｍｍ以下に設定することができる。また、凹部１７の深さＤとしては、金属基板５およびセラミック基体１３の間に位置するロウ材１１の厚みＴよりも大きいことが好ましい。これにより、金属基板５と入出力部材９との間からロウ材１１の一部がはみ出した場合であっても、安定して凹部１７内にロウ材１１を溜めることができる。そのため、セラミック基体１３の上面にロウ材１１が付着する可能性が低減される。結果として、セラミック基体１３の上面に配設された複数の配線導体１５が電気的に短絡する可能性をさらに小さくすることができる。 The depth D of the concave portion 17 can be set to 0.1 mm or more and 1.5 mm or less, for example. Further, the depth D of the concave portion 17 is preferably larger than the thickness T of the brazing material 11 located between the metal substrate 5 and the ceramic base 13. Thereby, even if a part of the brazing material 11 protrudes from between the metal substrate 5 and the input / output member 9, the brazing material 11 can be stably stored in the recess 17. Therefore, the possibility that the brazing material 11 adheres to the upper surface of the ceramic base 13 is reduced. As a result, the possibility that the plurality of wiring conductors 15 disposed on the upper surface of the ceramic substrate 13 are electrically short-circuited can be further reduced.
　また、凹部１７の深さＤとしては、金属基板５の厚みに対して１０～５０％であることが好ましい。上記の比率が１０％以上である場合には、安定して凹部１７内にロウ材１１を溜めることができる。また、金属基板５のうち、凹部１７の下方に位置する部分は相対的に厚みが小さくなるが、上記の比率が５０％以下である場合には、上記の相対的に厚みが小さい部分においても、十分な金属基板５の厚みを確保することができる。結果として、金属基板５の耐久性が過度に低下することを抑制できる。 Further, the depth D of the concave portion 17 is preferably 10 to 50% with respect to the thickness of the metal substrate 5. When the above ratio is 10% or more, the brazing material 11 can be stably stored in the recess 17. Further, the portion of the metal substrate 5 located below the recess 17 has a relatively small thickness. However, when the ratio is 50% or less, the portion having the relatively small thickness is also used. A sufficient thickness of the metal substrate 5 can be ensured. As a result, it can suppress that durability of the metal substrate 5 falls excessively.
　金属基板５および枠体７の間に挿入された入出力部材９の挿入されている方向に対して垂直で、かつ金属基板５の上面に対して平行な方向を第１の方向としたときに、凹部１７における第１の方向の幅Ｗ１が入出力部材９における第１の方向の幅Ｗ２よりも大きい。 When the first direction is a direction perpendicular to the direction in which the input / output member 9 inserted between the metal substrate 5 and the frame 7 is inserted and parallel to the upper surface of the metal substrate 5 The width W1 in the first direction of the recess 17 is larger than the width W2 of the input / output member 9 in the first direction.
　また、金属基板５を平面透視した場合に、ロウ材１１の一部が凹部１７と上下に重なり合うことが好ましい。図３に示すように、ロウ材１１の少なくとも一部が凹部１７と上下に重なり合うように位置していることによって、ロウ材１１が接合箇所からはみ出したとしても、凹部１７にロウ材１１をより確実に流れさせて凹部１７に溜めることができる。そのため、金属基板５と入出力部材９とを接合するロウ材１１が過度にセラミック基体１３の側面に付着することをさらに抑制できる。 Further, when the metal substrate 5 is seen through the plane, it is preferable that a part of the brazing material 11 overlaps the concave portion 17 in the vertical direction. As shown in FIG. 3, since the brazing material 11 is positioned so that at least a part of the brazing material 11 overlaps with the concave portion 17, even if the brazing material 11 protrudes from the joining portion, It can flow reliably and can be stored in the recess 17. Therefore, it is possible to further suppress the brazing material 11 joining the metal substrate 5 and the input / output member 9 from being excessively attached to the side surface of the ceramic base 13.
　凹部１７は、図７に示すように、枠体７で囲まれた領域内であってセラミック基体１３の周縁部分のみと重なり合う部分に形成されていてもよいが、図３に示すように形成されていることが好ましい。すなわち、凹部１７は、枠体７で囲まれた領域内におけるセラミック基体１３の全体と上下に重なり合うように形成されていることが好ましい。 As shown in FIG. 7, the recess 17 may be formed in a region surrounded by the frame body 7 and in a portion overlapping only the peripheral portion of the ceramic base 13, but is formed as shown in FIG. 3. It is preferable. That is, the concave portion 17 is preferably formed so as to overlap vertically with the entire ceramic base 13 in the region surrounded by the frame body 7.
　このように凹部１７が形成されている場合には、枠体７で囲まれた領域内において入出力部材９の下面をロウ材１１が濡れ広がる可能性を低減できる。そのため、枠体７で囲まれた領域内において入出力部材９の側面をロウ材１１が濡れ広がる可能性を低減できる。結果として、複数の配線導体１５が電気的に短絡する可能性をさらに低減することができる。 When the concave portion 17 is formed in this way, the possibility that the brazing material 11 spreads wet on the lower surface of the input / output member 9 in the region surrounded by the frame body 7 can be reduced. Therefore, the possibility that the brazing material 11 spreads on the side surface of the input / output member 9 in the region surrounded by the frame body 7 can be reduced. As a result, the possibility that the plurality of wiring conductors 15 are electrically short-circuited can be further reduced.
　また、凹部１７は、図８に示すように、底面と金属基板５の載置領域５ａに近い側の側面との間に段差部１７ａを有していても良い。図５および図６に示す凹部１７の形状と同様に、凹部１７内にロウ材１１が溜まった際に、ロウ材１１が膨張収縮することに起因して金属基板５に加わる応力の影響を小さくすることができる。また、凹部１７が金属基板５に設けられることによって低下する、載置領域５ａにおける剛性が高められる。 Further, as shown in FIG. 8, the recess 17 may have a stepped portion 17 a between the bottom surface and the side surface of the metal substrate 5 on the side close to the placement region 5 a. Similar to the shape of the concave portion 17 shown in FIGS. 5 and 6, when the brazing material 11 is accumulated in the concave portion 17, the influence of the stress applied to the metal substrate 5 due to the expansion and contraction of the brazing material 11 is reduced. can do. Moreover, the rigidity in the mounting area 5a, which is reduced by providing the concave portion 17 on the metal substrate 5, is increased.
　結果として、モジュール３１に外力が加えられる際に生じる金属基板５の変形や応力が抑制されるとともに、載置領域５ａに載置される半導体素子３と、枠体７に固定される光ファイバ２９との光軸ズレに伴った光信号の接続不良や、半導体素子３へのクラックや割れの発生が抑制される。 As a result, deformation and stress of the metal substrate 5 generated when an external force is applied to the module 31 are suppressed, and the semiconductor element 3 placed on the placement region 5 a and the optical fiber 29 fixed to the frame body 7. And the occurrence of cracks and cracks in the semiconductor element 3 are suppressed.
　また、図８に示すように、段差部１７ａが入出力部材９よりも内側に位置していることが好ましい。言い換えれば、段差部１７ａが入出力部材９とは上下に重なり合っていないことが好ましい。この様な場合には、セラミック基体１３の下面の周縁部分が凹部１７の底面と対向することになる。そのため、凹部１７の表面とセラミック基体１３の下面の周縁部分との間隔が狭くなることを抑制できる。従って、凹部１７に濡れ広がったロウ材１１がセラミック基体１３の下面の周縁部分と接触する可能性を小さくできる。 Further, as shown in FIG. 8, it is preferable that the stepped portion 17 a is located inside the input / output member 9. In other words, it is preferable that the stepped portion 17a does not overlap the input / output member 9 vertically. In such a case, the peripheral edge portion of the lower surface of the ceramic substrate 13 faces the bottom surface of the recess 17. Therefore, it can suppress that the space | interval of the surface of the recessed part 17 and the peripheral part of the lower surface of the ceramic base | substrate 13 becomes narrow. Therefore, it is possible to reduce the possibility that the brazing material 11 that has spread in the recesses 17 contacts the peripheral portion of the lower surface of the ceramic base 13.
　特に、図３に示すように、金属基板５を平面透視した場合に、凹部１７の一部が枠体７と上下に重なり合うことが好ましい。言い換えれば、凹部１７の一部が枠体７の直下に位置していることが好ましい。金属基板５と入出力部材９とを接合するロウ材１１がこれらの接合箇所からはみ出したとしても、凹部１７にロウ材１１をより確実に流れさせて凹部１７に溜めることができる。そのため、金属基板５と入出力部材９とを接合するロウ材１１が過度にセラミック基体１３の側面に付着することをさらに抑制できる。 In particular, as shown in FIG. 3, when the metal substrate 5 is seen through in plane, it is preferable that a part of the concave portion 17 overlaps the frame body 7 in the vertical direction. In other words, it is preferable that a part of the concave portion 17 is located immediately below the frame body 7. Even if the brazing material 11 that joins the metal substrate 5 and the input / output member 9 protrudes from these joining locations, the brazing material 11 can flow more reliably into the recess 17 and be collected in the recess 17. Therefore, it is possible to further suppress the brazing material 11 joining the metal substrate 5 and the input / output member 9 from being excessively attached to the side surface of the ceramic base 13.
　本実施形態のパッケージ１は、図２に示すように、金属基板５を平面視した場合に、金属基板５が、枠体７よりも外側に延出された、金属基板５が搭載される搭載基板（不図示）にネジ止めされるネジ止め部１９を有している。 As shown in FIG. 2, the package 1 according to the present embodiment is mounted on which the metal substrate 5 is mounted so that the metal substrate 5 extends outside the frame body 7 when the metal substrate 5 is viewed in plan. It has the screwing part 19 screwed to a board | substrate (not shown).
　ネジ止め部１９の少なくとも一部は、凹部１７のネジ止め部１９が延出される方向の延長上に位置していることが好ましい。具体的には、金属基板５におけるネジ止め部１９が延出される方向を第２の方向として、凹部１７およびネジ止め部１９をそれぞれ第２の方向に延長した場合に、領域Ｘで示すように凹部１７とネジ止め部１９とが部分的に重なり合うことが好ましい。 It is preferable that at least a part of the screwing portion 19 is located on an extension in the direction in which the screwing portion 19 of the recess 17 extends. Specifically, when the direction in which the screwing portion 19 of the metal substrate 5 extends is the second direction, the recess 17 and the screwing portion 19 are each extended in the second direction, as indicated by the region X, as shown in FIG. It is preferable that the concave portion 17 and the screwing portion 19 partially overlap.
　ネジ止め部１９によってパッケージ１を搭載基板にネジ止めする際に、ネジ止め部１９に押圧力が加わる。この押圧力はネジ止め部１９が延出される方向である第２の方向と逆の方向に向かって金属基板５の枠体７で囲まれた領域へと伝達される。本実施形態のパッケージ１においては、この押圧力が伝達される先に凹部１７の少なくとも一部が位置している。 When the package 1 is screwed to the mounting substrate by the screwing part 19, a pressing force is applied to the screwing part 19. This pressing force is transmitted to a region surrounded by the frame body 7 of the metal substrate 5 in a direction opposite to the second direction in which the screwing portion 19 extends. In the package 1 of the present embodiment, at least a part of the recess 17 is positioned before the pressing force is transmitted.
　金属基板５のうち、凹部１７の下方に位置する部分は相対的に厚みが小さいため、弾性変形しやすい。金属基板５のうち、このように弾性変形しやすい個所が上記の押圧力が伝達される先に位置していることから、凹部１７において上記の押圧力を緩和させることができる。 The portion of the metal substrate 5 that is located below the recess 17 is relatively thin and thus is easily elastically deformed. Since the portion that is easily elastically deformed in the metal substrate 5 is located at the point where the pressing force is transmitted, the pressing force can be relaxed in the concave portion 17.
　本実施形態にかかる金属基板５は、板状の金属部材によって構成されている。金属部材としては、具体的には、鉄、銅、ニッケル、クロム、コバルトもしくはタングステンのような金属材料、またはこれらの金属からなる合金を用いることができる。このような金属部材のインゴットに圧延加工法、打ち抜き加工法のような金属加工法を施すことによって金属基板５を構成する板状の金属部材を作製することができる。金属基板５は、一枚の金属部材によって構成されていても良く、また、複数の金属部材を積層することによって構成されていても良い。 The metal substrate 5 according to the present embodiment is composed of a plate-shaped metal member. Specifically, a metal material such as iron, copper, nickel, chromium, cobalt, or tungsten, or an alloy made of these metals can be used as the metal member. A plate-like metal member constituting the metal substrate 5 can be produced by subjecting such a metal member ingot to a metal working method such as a rolling method or a punching method. The metal substrate 5 may be constituted by a single metal member or may be constituted by laminating a plurality of metal members.
　このように作製された金属基板５の上面における、枠体７で囲まれた領域内であって少なくともセラミック基体１３の周縁部分と上下に重なり合う箇所を部分的に切削することによって、凹部１７を形成することができる。また、例えば、金属基板５が複数の金属部材を積層することによって構成されている場合には、最上部に位置する金属部材に貫通孔を設けることによって凹部１７を形成してもよい。 A recess 17 is formed by partially cutting at least a portion of the upper surface of the metal substrate 5 thus manufactured, which is surrounded by the frame 7 and overlaps at least with the peripheral portion of the ceramic base 13. can do. Further, for example, when the metal substrate 5 is configured by laminating a plurality of metal members, the concave portion 17 may be formed by providing a through hole in the metal member located at the top.
　枠体７は、平面視した場合に載置領域５ａを囲むように金属基板５の上面に設けられている。枠体７は、内周面および外周面に開口する貫通孔を有している。そして、この貫通孔には光ファイバ２９が固定される筒状の固定部材２１が挿入固定されている。貫通孔は、例えばドリル孔あけ加工によって枠体７に形成することができる。 The frame body 7 is provided on the upper surface of the metal substrate 5 so as to surround the placement area 5a when viewed in plan. The frame body 7 has through holes that open to the inner peripheral surface and the outer peripheral surface. A cylindrical fixing member 21 to which the optical fiber 29 is fixed is inserted and fixed in the through hole. The through hole can be formed in the frame body 7 by, for example, drilling.
　枠体７が、図１，２に示すように平面視した際の外周および内周の形状が四角形である筒形状である場合、例えば外周を一辺１０ｍｍ以上１００ｍｍ以下に設定することができる。また、外周と内周との間の距離を枠体７の厚みとした場合、枠体７の厚みは、例えば０．５ｍｍ以上２ｍｍ以下に設定することができる。また、枠体７の高さとしては、例えば２ｍｍ以上１０ｍｍ以下に設定することができる。 When the frame body 7 has a cylindrical shape in which the outer periphery and the inner periphery are square when viewed in plan as shown in FIGS. 1 and 2, for example, the outer periphery can be set to 10 mm or more and 100 mm or less on a side. Moreover, when the distance between an outer periphery and an inner periphery is made into the thickness of the frame 7, the thickness of the frame 7 can be set to 0.5 mm or more and 2 mm or less, for example. Moreover, as the height of the frame 7, it can set to 2 mm or more and 10 mm or less, for example.
　枠体７としては、例えば、鉄、銅、ニッケル、クロム、コバルトもしくはタングステンのような金属部材、またはこれらの金属からなる合金を用いることができる。このような金属部材のインゴットに圧延加工法、打ち抜き加工法のような金属加工法を施すことによって枠体７を作製することができる。また、枠体７として、酸化アルミニウム質焼結体、ムライト質焼結体、炭化珪素質焼結体、窒化アルミニウム質焼結体または窒化珪素質焼結体のようなセラミック部材を用いてもよい。また、枠体７は、一つの部材からなっていてもよいが、複数の部材の積層構造であってもよい。枠体７は、金属基板５および枠体７の間に位置する接合部材を介して金属基板５に接合されている。例示的な接合部材としては、銀ロウが挙げられる。 As the frame 7, for example, a metal member such as iron, copper, nickel, chromium, cobalt or tungsten, or an alloy made of these metals can be used. The frame body 7 can be produced by subjecting such an ingot of a metal member to a metal processing method such as a rolling method or a punching method. Further, as the frame body 7, a ceramic member such as an aluminum oxide sintered body, a mullite sintered body, a silicon carbide sintered body, an aluminum nitride sintered body, or a silicon nitride sintered body may be used. . Further, the frame body 7 may be composed of one member, but may be a laminated structure of a plurality of members. The frame body 7 is bonded to the metal substrate 5 via a bonding member located between the metal substrate 5 and the frame body 7. An exemplary joining member includes silver wax.
　金属基板５および枠体７の間には部分的に枠体７の内周側および外周側に開口する開口部が形成されている。この開口部に入出力部材９が挿入されている。入出力部材９は、セラミック基体１３（第１のセラミック基体１３）および第１のセラミック基体１３の上面に配設された複数の配線導体１５を有している。 Between the metal substrate 5 and the frame body 7, openings that are partially opened to the inner peripheral side and the outer peripheral side of the frame body 7 are formed. An input / output member 9 is inserted into the opening. The input / output member 9 includes a ceramic base 13 (first ceramic base 13) and a plurality of wiring conductors 15 disposed on the upper surface of the first ceramic base 13.
　第１のセラミック基体１３の上面には複数の配線導体１５が配設されている。これらの配線導体１５を介して半導体素子３と外部配線（不図示）との間で信号の入出力を行うことができる。このように、第１のセラミック基体１３の上面には配線導体１５が配設されることから、第１のセラミック基体１３としては、高い絶縁性を有していることが求められる。第１のセラミック基体１３としては、例えば、酸化アルミニウム質焼結体、ムライト質焼結体、炭化珪素質焼結体、窒化アルミニウム質焼結体もしくは窒化珪素質焼結体のようなセラミック材料、またはガラスセラミック材料を用いることができる。 A plurality of wiring conductors 15 are disposed on the upper surface of the first ceramic base 13. Signals can be input / output between the semiconductor element 3 and external wiring (not shown) via these wiring conductors 15. As described above, since the wiring conductor 15 is disposed on the upper surface of the first ceramic base 13, the first ceramic base 13 is required to have high insulation. As the first ceramic substrate 13, for example, a ceramic material such as an aluminum oxide sintered body, a mullite sintered body, a silicon carbide sintered body, an aluminum nitride sintered body or a silicon nitride sintered body, Alternatively, a glass ceramic material can be used.
　第１のセラミック基体１３が図１～３に示すように四角板形状である場合、第１のセラミック基体１３の大きさとしては、例えば上面の長辺を５ｍｍ以上５０ｍｍ以下に設定することができる。また、上面の短辺を１ｍｍ以上１０ｍｍ以下に設定することができる。また、第１のセラミック基体１３の厚みとしては、例えば、０．５ｍｍ以上５ｍｍ以下に設定することができる。 When the first ceramic base 13 has a quadrangular plate shape as shown in FIGS. 1 to 3, the size of the first ceramic base 13 can be set, for example, such that the long side of the upper surface is 5 mm or more and 50 mm or less. . Moreover, the short side of the upper surface can be set to 1 mm or more and 10 mm or less. Moreover, as thickness of the 1st ceramic base | substrate 13, it can set to 0.5 mm or more and 5 mm or less, for example.
　枠体７が金属部材からなる場合、配線導体１５の枠体７に対する絶縁性を確保するため、第１のセラミック基体１３および配線導体１５と枠体７との間に第２のセラミック基体２３が配設されていることが好ましい。第２のセラミック基体２３としては、第１のセラミック基体１３と同様に、例えば、酸化アルミニウム質焼結体、ムライト質焼結体、炭化珪素質焼結体、窒化アルミニウム質焼結体もしくは窒化珪素質焼結体のようなセラミック材料、またはガラスセラミック材料を用いることができる。 When the frame body 7 is made of a metal member, the first ceramic base 13 and the second ceramic base body 23 between the wiring conductor 15 and the frame body 7 are provided to ensure insulation of the wiring conductor 15 with respect to the frame body 7. It is preferable that it is disposed. As the second ceramic substrate 23, for example, an aluminum oxide sintered body, a mullite sintered body, a silicon carbide sintered body, an aluminum nitride sintered body, or silicon nitride is used in the same manner as the first ceramic substrate 13. A ceramic material such as a sintered material, or a glass ceramic material can be used.
　金属基板５とセラミック基体１３との接合性を高めるため、セラミック基体１３の下面には、メタライズ層のような金属層が形成されていることが好ましい。これにより、入出力端子９のロウ材１１に対する濡れ性を高めることができるからである。 In order to improve the bondability between the metal substrate 5 and the ceramic substrate 13, it is preferable that a metal layer such as a metallized layer is formed on the lower surface of the ceramic substrate 13. This is because the wettability of the input / output terminal 9 with respect to the brazing material 11 can be improved.
　このとき、セラミック基体１３の下面の周縁部分であって平面視した場合に枠体７で囲まれた領域に位置する部分には、金属層が形成されていないことがさらに好ましい。これは、ロウ材１１が金属層の表面を伝ってセラミック基体１３の側面にロウ材１１が濡れ広がる可能性を小さくするためである。 At this time, it is more preferable that a metal layer is not formed in a peripheral edge portion of the lower surface of the ceramic base 13 and located in a region surrounded by the frame body 7 when viewed in plan. This is to reduce the possibility that the brazing material 11 spreads on the side surface of the ceramic base 13 through the surface of the metal layer.
　例えば、セラミック基体１３の下面であって枠体７と上下に重なり合う部分のみに金属層を配設した場合には、セラミック基体１３の下面の周縁部分であって平面視した場合に枠体７で囲まれた領域に位置する部分に金属層が形成されていない構成にできる。このような場合には、金属基板５とセラミック基体１３との接合性を高めつつも、セラミック基体１３の側面にロウ材１１が濡れ広がる可能性を小さくできる。 For example, when the metal layer is disposed only on the lower surface of the ceramic base 13 and overlaps the frame body 7 in the vertical direction, the frame body 7 has a peripheral portion on the lower surface of the ceramic base 13 when viewed in plan. A configuration in which a metal layer is not formed in a portion located in the enclosed region can be achieved. In such a case, it is possible to reduce the possibility that the brazing material 11 spreads on the side surface of the ceramic substrate 13 while improving the bonding property between the metal substrate 5 and the ceramic substrate 13.
　また、金属基板５とセラミック基体１３との接合性およびパッケージ１の気密性を高めるため、図３に示すように、ロウ材１１の幅Ｗ３としては、枠体７の厚みＷ４よりも大きいことが好ましい。ロウ材１１の幅Ｗ３が枠体７の厚みＷ４よりも大きい場合には、金属基板５と入出力部材９との接合性およびパッケージ１の気密性を高めることができる。 Further, in order to improve the bondability between the metal substrate 5 and the ceramic base 13 and the hermeticity of the package 1, the width W3 of the brazing material 11 may be larger than the thickness W4 of the frame 7 as shown in FIG. preferable. When the width W3 of the brazing material 11 is larger than the thickness W4 of the frame body 7, the bondability between the metal substrate 5 and the input / output member 9 and the airtightness of the package 1 can be improved.
　一方で、従来の素子収納用パッケージでは、金属基板５とセラミック基体１３とを接合するロウ材１１が過度にセラミック基体１３の側面に付着する可能性がある。しかしながら、本実施形態のパッケージ１においては、金属基板５が凹部１７を有していることから、金属基板５と入出力部材９とを接合するロウ材１１が過度にセラミック基体１３の側面に付着する可能性を小さくすることが出来る。 On the other hand, in the conventional element storage package, the brazing material 11 for joining the metal substrate 5 and the ceramic base 13 may be excessively attached to the side surface of the ceramic base 13. However, in the package 1 of the present embodiment, since the metal substrate 5 has the recesses 17, the brazing material 11 that joins the metal substrate 5 and the input / output member 9 is excessively attached to the side surface of the ceramic substrate 13. The possibility of doing can be reduced.
　複数の配線導体１５は、それぞれ枠体７で囲まれた領域の内側から外側にかけて位置している。これにより、枠体７で囲まれた領域の内側と外側との間で電気的な接続を図ることができる。複数の配線導体１５は、互いに電気的に短絡することの無いように所定の間隔をあけて配設されている。配線導体１５としては、導電性の良好な部材を用いることが好ましい。具体的には、タングステン、モリブデン、ニッケル、銅、銀または金のような金属材料を配線導体１５として用いることができる。上記の金属材料を単一で用いてもよく、また、合金として用いてもよい。 The plurality of wiring conductors 15 are located from the inside to the outside of the region surrounded by the frame body 7. Thereby, electrical connection can be achieved between the inside and the outside of the region surrounded by the frame body 7. The plurality of wiring conductors 15 are arranged at predetermined intervals so as not to be electrically short-circuited with each other. As the wiring conductor 15, it is preferable to use a member having good conductivity. Specifically, a metal material such as tungsten, molybdenum, nickel, copper, silver, or gold can be used as the wiring conductor 15. The above metal materials may be used alone or as an alloy.
　配線導体１５は、リード端子２５などを介して外部配線（不図示）と半導体素子３とを電気的に接続するための部材である。そのため、本実施形態における配線導体１５は第１のセラミック基体１３の上面に配設されているが、特にこれに限られるものではない。例えば、配線導体１５の一部が第１のセラミック基体１３に埋設されていてもよい。 The wiring conductor 15 is a member for electrically connecting an external wiring (not shown) and the semiconductor element 3 via the lead terminal 25 or the like. Therefore, although the wiring conductor 15 in this embodiment is arrange | positioned on the upper surface of the 1st ceramic base | substrate 13, it is not restricted to this in particular. For example, a part of the wiring conductor 15 may be embedded in the first ceramic base 13.
　特に、配線導体１５の一部が第１のセラミック基体１３に埋設されている場合、この埋設されている部分においては、複数の配線導体１５の間に絶縁性部材からなる第１のセラミック基体１３が存在することとなる。そのため、複数の配線導体１５の間における絶縁性を高めることができる。また、配線導体１５の一部が第１のセラミック基体１３に埋設されている場合、第１のセラミック基体１３の側面から配線導体１５を引き出して、この金属基板５の側面において露出している部分でリード端子２５と電気的に接続してもよい。 In particular, when a part of the wiring conductor 15 is embedded in the first ceramic base 13, the first ceramic base 13 made of an insulating member is provided between the wiring conductors 15 in the embedded portion. Will exist. Therefore, the insulation between the plurality of wiring conductors 15 can be improved. In addition, when a part of the wiring conductor 15 is embedded in the first ceramic base 13, a portion where the wiring conductor 15 is pulled out from the side surface of the first ceramic base 13 and is exposed on the side surface of the metal substrate 5. The lead terminal 25 may be electrically connected.
　リード端子２５としては、配線導体１５と同様に導電性の良好な部材を用いることが好ましい。具体的には、タングステン、モリブデン、ニッケル、銅、銀または金のような金属材料をリード端子２５として用いることができる。上記の金属材料を単一で用いてもよく、また、合金として用いてもよい。 As the lead terminal 25, it is preferable to use a member having good conductivity like the wiring conductor 15. Specifically, a metal material such as tungsten, molybdenum, nickel, copper, silver, or gold can be used as the lead terminal 25. The above metal materials may be used alone or as an alloy.
　また、本実施形態のパッケージ１は、入出力部材９を複数有し、それぞれの入出力部材９が金属基板５および前記枠体７の間に挿入固定されている。言い換えれば、本実施形態のパッケージ１は、セラミック基体１３を複数有し、それぞれのセラミック基体１３が金属基板５および前記枠体７の間に挿入固定されている。そして、金属基板５は、金属基板５の上面における枠体７で囲まれた領域内であって、少なくとも複数のセラミック基体１３の周縁部分と上下に重なり合う部分にそれぞれ形成された凹部１７を有している。 The package 1 of the present embodiment has a plurality of input / output members 9, and each input / output member 9 is inserted and fixed between the metal substrate 5 and the frame body 7. In other words, the package 1 of this embodiment has a plurality of ceramic bases 13, and each ceramic base 13 is inserted and fixed between the metal substrate 5 and the frame body 7. And the metal substrate 5 has the recessed part 17 each formed in the area | region enclosed by the frame 7 in the upper surface of the metal substrate 5, and the part which overlaps with the peripheral part of the some ceramic base | substrate 13 at least up and down, respectively. ing.
　上記の複数の凹部１７を有していることから、これらのセラミック基体１３と金属基板５とが上下に重なり合う部分においては、金属基板５とそれぞれの入出力部材９とを接合するロウ材１１が過度に各セラミック基体１３の側面に付着することを抑制することができる。 Since the plurality of concave portions 17 are provided, the brazing material 11 for joining the metal substrate 5 and the respective input / output members 9 is formed in the portion where the ceramic base 13 and the metal substrate 5 overlap each other in the vertical direction. Excessive adhesion to the side surface of each ceramic substrate 13 can be suppressed.
　入出力部材９を複数有し、これら複数の入出力部材９の周縁部分と上下に重なり合う部分にそれぞれ凹部１７を有している場合には、これらの凹部１７の深さが等しいことが好ましい。凹部１７の深さのばらつきが大きいと、金属基板５の一部に応力が集中しやすくなる。一方、凹部１７の深さが等しいことによって、それぞれの凹部１７の下方に位置する金属基板５の部位に加わる応力のばらつきを小さくすることができる。結果として、金属基板５の耐久性を向上させることができる。 In the case where a plurality of input / output members 9 are provided and the recesses 17 are respectively provided in portions overlapping with the peripheral portions of the plurality of input / output members 9, it is preferable that the depths of these recesses 17 are equal. When the variation in the depth of the concave portion 17 is large, the stress tends to concentrate on a part of the metal substrate 5. On the other hand, when the depths of the recesses 17 are equal, variations in stress applied to the portion of the metal substrate 5 located below the respective recesses 17 can be reduced. As a result, the durability of the metal substrate 5 can be improved.
　本実施形態のパッケージ１は、載置領域５ａ上に配設された、半導体素子３を載置するための載置基板２７を備えている。半導体素子３を金属基板５に対して直接に載置してもよいが、本実施形態のパッケージ１のように、載置基板２７を備えるとともに、この載置基板２７上に半導体素子３が載置されていることが好ましい。半導体素子３の金属基板５に対する絶縁性を確保できるからである。半導体素子３として光半導体素子を用いていた場合、光半導体素子と後述する固定部材２１の高さのずれを小さくすることができる。そのため、半導体素子３の光ファイバ２９に対する光学的な結合を容易にできる。 The package 1 of the present embodiment includes a mounting substrate 27 for mounting the semiconductor element 3 disposed on the mounting region 5a. Although the semiconductor element 3 may be mounted directly on the metal substrate 5, the mounting board 27 is provided as in the package 1 of the present embodiment, and the semiconductor element 3 is mounted on the mounting board 27. It is preferable to be placed. This is because the insulation of the semiconductor element 3 with respect to the metal substrate 5 can be secured. In the case where an optical semiconductor element is used as the semiconductor element 3, it is possible to reduce a deviation in height between the optical semiconductor element and a fixing member 21 described later. Therefore, the optical coupling of the semiconductor element 3 to the optical fiber 29 can be facilitated.
　載置基板２７としては、絶縁性の良好な部材を用いることが好ましく、例えば、酸化アルミニウム質焼結体、ムライト質焼結体、炭化珪素質焼結体、窒化アルミニウム質焼結体もしくは窒化珪素質焼結体のようなセラミック材料、またはガラスセラミック材料を用いることができる。 As the mounting substrate 27, it is preferable to use a member having good insulating properties. For example, an aluminum oxide sintered body, a mullite sintered body, a silicon carbide sintered body, an aluminum nitride sintered body, or silicon nitride is used. A ceramic material such as a sintered material, or a glass ceramic material can be used.
　本実施形態のパッケージ１は、光ファイバ２９が固定される筒状の固定部材２１を備えている。より具体的には、図１～３に示すように、固定部材２１は、一端が枠体７の内側に位置するとともに、他端が枠体７の外側に位置するように枠体７に固定されている。具体的には、固定部材２１は枠体７に設けられた貫通孔に挿入固定されている。そのため、固定部材２１は金属基板５から所定の距離をあけて離隔している。 The package 1 of the present embodiment includes a cylindrical fixing member 21 to which the optical fiber 29 is fixed. More specifically, as shown in FIGS. 1 to 3, the fixing member 21 is fixed to the frame body 7 so that one end is positioned inside the frame body 7 and the other end is positioned outside the frame body 7. Has been. Specifically, the fixing member 21 is inserted and fixed in a through hole provided in the frame body 7. Therefore, the fixing member 21 is separated from the metal substrate 5 by a predetermined distance.
　本実施形態における固定部材２１は、光ファイバ２９を固定して位置決めを図るとともに、筒状であることによって、この筒形状の中空部分で光半導体素子と光ファイバ２９との間での光の伝達を行うことができる。固定部材２１は、枠体７と固定部材２１との間に位置する第２の接合部材によって枠体７に固定されている。 In the present embodiment, the fixing member 21 fixes and positions the optical fiber 29 and has a cylindrical shape, so that light is transmitted between the optical semiconductor element and the optical fiber 29 in the cylindrical hollow portion. It can be performed. The fixing member 21 is fixed to the frame body 7 by a second bonding member located between the frame body 7 and the fixing member 21.
　固定部材２１としては、少なくとも光ファイバ２９を固定できる程度の強度を有していることが好ましい。具体的には、鉄、銅、ニッケル、クロム、コバルトもしくはタングステンのような金属部材、またはこれらの金属からなる合金を用いることができる。このような金属部材のインゴットに圧延加工法、打ち抜き加工法のような金属加工法を施すことによって筒状の固定部材２１を作製することができる。 It is preferable that the fixing member 21 has a strength that can at least fix the optical fiber 29. Specifically, a metal member such as iron, copper, nickel, chromium, cobalt, or tungsten, or an alloy made of these metals can be used. The cylindrical fixing member 21 can be produced by subjecting such an ingot of a metal member to a metal processing method such as a rolling method or a punching method.
　特に、枠体７と固定部材２１とが、同じ金属部材を用いて形成されていることが好ましい。枠体７および固定部材２１の熱膨張差を小さくすることができるからである。これにより、枠体７と固定部材２１との間に生じる応力を小さくできる。 Particularly, it is preferable that the frame body 7 and the fixing member 21 are formed using the same metal member. This is because the difference in thermal expansion between the frame body 7 and the fixing member 21 can be reduced. Thereby, the stress which arises between the frame 7 and the fixing member 21 can be made small.
　本実施形態のパッケージ１においては、金属基板５の、固定部材２１が挿入固定される枠体７の貫通孔の下方に位置する領域に凹部１７が形成されている。そのため、第２の接合部材の一部が枠体７と固定部材２１との間から流れ出た場合であっても、第２の接合部材も凹部１７に溜めることができる。 In the package 1 of the present embodiment, the concave portion 17 is formed in a region of the metal substrate 5 located below the through hole of the frame body 7 in which the fixing member 21 is inserted and fixed. Therefore, even when a part of the second joining member flows out between the frame body 7 and the fixing member 21, the second joining member can also be stored in the recess 17.
　次に、一実施形態のモジュール３１について説明する。 Next, the module 31 of one embodiment will be described.
　本実施形態のモジュール３１は、上記の実施形態に代表される素子収納用パッケージ１と、素子収納用パッケージ１の載置領域５ａ内に載置された半導体素子３と、枠体７と接合された、半導体素子３を封止する蓋体３３とを備えている。 The module 31 of this embodiment is joined to the element housing package 1 typified by the above embodiment, the semiconductor element 3 placed in the placement area 5 a of the element housing package 1, and the frame body 7. In addition, a lid 33 that seals the semiconductor element 3 is provided.
　本実施形態のモジュール３１においては、金属基板５の載置領域５ａに半導体素子３として光半導体素子が載置されている。また、半導体素子３が導線を介して配線導体１５に電気的に接続されている。この半導体素子３に外部配線、配線導体１５および導線を介して外部信号を入力することにより、半導体素子３から所望の出力を得ることができる。 In the module 31 of this embodiment, an optical semiconductor element is placed as the semiconductor element 3 in the placement area 5 a of the metal substrate 5. Further, the semiconductor element 3 is electrically connected to the wiring conductor 15 through a conductive wire. A desired output can be obtained from the semiconductor element 3 by inputting an external signal to the semiconductor element 3 via the external wiring, the wiring conductor 15 and the conducting wire.
　光半導体素子としては、例えば、ＬＤ素子に代表される、光ファイバ２９に対して光を出射する発光素子、およびＰＤ素子に代表される、光ファイバ２９に対して光を受光する受光素子が挙げられる。 Examples of the optical semiconductor element include a light emitting element that emits light to the optical fiber 29 typified by an LD element, and a light receiving element that receives light to the optical fiber 29 typified by a PD element. It is done.
　半導体素子３は、例えば、導線を介して、いわゆるワイヤーボンディングによって配線導体１５に電気的に接続することができる。また、半導体素子３は、いわゆるフリップチップによって配線導体１５に電気的に接続されていてもよい。具体的には、半導体素子３の直下まで配線導体１５を延設して、ロウ材１１のような導電性接着剤を介して半導体素子３を配線導体１５に接合してもよい。 The semiconductor element 3 can be electrically connected to the wiring conductor 15 by, for example, so-called wire bonding via a conducting wire. The semiconductor element 3 may be electrically connected to the wiring conductor 15 by so-called flip chip. Specifically, the wiring conductor 15 may be extended just below the semiconductor element 3, and the semiconductor element 3 may be joined to the wiring conductor 15 via a conductive adhesive such as the brazing material 11.
　蓋体３３は、枠体７と接合され、半導体素子３を封止するように設けられている。蓋体３３は、枠体７の上面に接合されている。そして、金属基板５、枠体７および蓋体３３で囲まれた空間において半導体素子３を封止している。このように半導体素子３を封止することによって、長期間のパッケージ１の使用による半導体素子３の劣化を抑制することができる。 The lid body 33 is joined to the frame body 7 so as to seal the semiconductor element 3. The lid body 33 is joined to the upper surface of the frame body 7. The semiconductor element 3 is sealed in a space surrounded by the metal substrate 5, the frame body 7, and the lid body 33. By sealing the semiconductor element 3 in this way, it is possible to suppress the deterioration of the semiconductor element 3 due to the long-term use of the package 1.
　蓋体３３としては、例えば、鉄、銅、ニッケル、クロム、コバルトもしくはタングステンのような金属部材、またはこれらの金属からなる合金を用いることができる。また、枠体７と蓋体３３は、例えばシーム溶接法によって接合することができる。また、枠体７と蓋体３３は、例えば、金－錫ロウを用いて接合してもよい。 As the lid 33, for example, a metal member such as iron, copper, nickel, chromium, cobalt, or tungsten, or an alloy made of these metals can be used. The frame body 7 and the lid body 33 can be joined by, for example, a seam welding method. Further, the frame body 7 and the lid body 33 may be joined using, for example, gold-tin solder.
　以上、本発明の実施形態にかかる素子収納用パッケージおよびこれを備えたモジュールについて説明してきたが、本発明は上述の実施形態に限定されるものではない。すなわち、本発明の要旨を逸脱しない範囲内であれば種々の変更や実施の形態の組み合わせを施すことは何等差し支えない。 As described above, the element storage package and the module including the same according to the embodiment of the present invention have been described, but the present invention is not limited to the above-described embodiment. In other words, various modifications and combinations of embodiments may be made without departing from the scope of the present invention.
１・・・素子収納用パッケージ
３・・・半導体素子
５・・・基板
５ａ・・・載置領域
７・・・枠体
９・・・入出力部材
１１・・・ロウ材
１３・・・セラミック基体（第１のセラミック基体）
１５・・・配線導体
１７・・・凹部
１９・・・ネジ止め部
２１・・・固定部材
２３・・・第２のセラミック基体
２５・・・リード端子
２７・・・載置基板
２９・・・光ファイバ
３１・・・モジュール
３３・・・蓋体
  DESCRIPTION OF SYMBOLS 1 ... Element storage package 3 ... Semiconductor element 5 ... Substrate 5a ... Mounting area 7 ... Frame body 9 ... Input / output member 11 ... Brazing material 13 ... Ceramic Substrate (first ceramic substrate)
15 ... Wiring conductor 17 ... Recess 19 ... Screw fixing part 21 ... Fixing member 23 ... Second ceramic substrate 25 ... Lead terminal 27 ... Mounting substrate 29 ... Optical fiber 31 ... Module 33 ... Lid

Claims (9)

  1. 　上面に半導体素子が載置される載置領域を有する金属基板と、
    該金属基板の上面に前記載置領域を囲むように配設された枠体と、
    前記金属基板および前記枠体の間に挿入された、セラミック基体および該セラミック基体の上面に配設された複数の配線導体を有する入出力部材と、
    前記金属基板および前記入出力部材の間に位置して、前記金属基板および前記入出力部材を接合するロウ材とを備え、
    前記金属基板は、上面における前記枠体で囲まれた領域内であって少なくとも前記入出力部材の周縁部分と上下に重なり合う部分に形成された凹部を有することを特徴とする素子収納用パッケージ。     A metal substrate having a mounting region on which the semiconductor element is mounted;
    A frame disposed on the upper surface of the metal substrate so as to surround the placement area;
    An input / output member having a ceramic base and a plurality of wiring conductors disposed on an upper surface of the ceramic base, inserted between the metal substrate and the frame;
    The brazing material is disposed between the metal substrate and the input / output member, and joins the metal substrate and the input / output member.
    The element storage package according to claim 1, wherein the metal substrate has a recess formed in a region of the upper surface that overlaps at least a peripheral portion of the input / output member in a region surrounded by the frame.
  2. 　前記凹部は、前記枠体で囲まれた領域内における前記入出力部材の全体と上下に重なり合う部分に形成されていることを特徴とする請求項１に記載の素子収納用パッケージ。 2. The element storage package according to claim 1, wherein the recess is formed in a portion that overlaps the entire input / output member in a region surrounded by the frame.
  3. 　前記ロウ材の一部が前記凹部と上下に重なり合っていることを特徴とする請求項１に記載の素子収納用パッケージ。 2. The element storage package according to claim 1, wherein a part of the brazing material overlaps with the concave portion in the vertical direction.
  4. 　前記凹部の一部が前記枠体と上下に重なり合っていることを特徴とする請求項１に記載の素子収納用パッケージ。 2. The element storage package according to claim 1, wherein a part of the recess overlaps the frame body vertically.
  5. 　前記凹部は、開口縁の角部が曲線形状であることを特徴とする請求項１に記載の素子収納用パッケージ。 2. The element storage package according to claim 1, wherein the recess has a curved corner at the opening edge.
  6. 　前記金属基板および前記入出力部材の間に位置する前記ロウ材の厚みよりも前記凹部の深さが大きいことを特徴とする請求項１に記載の素子収納用パッケージ。 2. The element storage package according to claim 1, wherein the depth of the recess is greater than the thickness of the brazing material positioned between the metal substrate and the input / output member.
  7. 　前記金属基板が、前記枠体よりも外側に延出された、前記金属基板が搭載される搭載基板にネジ止めされるネジ止め部を有し、該ネジ止め部の少なくとも一部は、前記凹部における前記ネジ止め部が延出される方向の延長上に位置していることを特徴とする請求項１に記載の素子収納用パッケージ。 The metal substrate has a screwing portion that extends outward from the frame and is screwed to a mounting substrate on which the metal substrate is mounted, and at least a part of the screwing portion is the recess. The element storage package according to claim 1, wherein the package is positioned on an extension in a direction in which the screwing portion extends.
  8. 　前記入出力部材を複数有し、
    前記金属基板は、上面における前記枠体で囲まれた領域内であって少なくとも前記複数の入出力部材の周縁部分と上下に重なり合う部分にそれぞれ形成された凹部を有することを特徴とする請求項１に記載の素子収納用パッケージ。     A plurality of input / output members;
    2. The metal substrate includes a recess formed in a region surrounded by the frame body on an upper surface and at least overlapping with a peripheral portion of the plurality of input / output members. The device storage package according to 1.
  9. 　請求項１～８のいずれか一つに記載の素子収納用パッケージと、
    該素子収納用パッケージの前記載置領域内に載置された前記半導体素子と、
    前記枠体に接合された、前記半導体素子を封止する蓋体とを備えたモジュール。
          The element storage package according to any one of claims 1 to 8,
    The semiconductor element placed in the placement area of the element storage package;
    A module comprising: a lid body that is bonded to the frame body and seals the semiconductor element.
PCT/JP2011/069145 2010-08-27 2011-08-25 Element-containing package and module provided therewith WO2012026516A1 (en)

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JP2010-190477 2010-08-27

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014150212A (en) * 2013-02-04 2014-08-21 Nippon Steel & Sumikin Electronics Devices Inc Package for housing electronic component
CN112119489A (en) * 2018-08-21 2020-12-22 Ngk电子器件株式会社 Wiring substrate, package, and module
CN113068333A (en) * 2015-09-15 2021-07-02 赛峰电子与防务公司 Compact electronic system and device comprising such a system

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Publication number Priority date Publication date Assignee Title
JP2001168220A (en) * 1999-12-10 2001-06-22 Kyocera Corp Package for storage of semiconductor component
JP2002134763A (en) * 2000-10-27 2002-05-10 Kyocera Corp Container for semiconductor light receiving element
JP2003046015A (en) * 2001-07-27 2003-02-14 Kyocera Corp Semiconductor element package and semiconductor device
JP2004095596A (en) * 2002-08-29 2004-03-25 Kyocera Corp Package for housing semiconductor element, and semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001168220A (en) * 1999-12-10 2001-06-22 Kyocera Corp Package for storage of semiconductor component
JP2002134763A (en) * 2000-10-27 2002-05-10 Kyocera Corp Container for semiconductor light receiving element
JP2003046015A (en) * 2001-07-27 2003-02-14 Kyocera Corp Semiconductor element package and semiconductor device
JP2004095596A (en) * 2002-08-29 2004-03-25 Kyocera Corp Package for housing semiconductor element, and semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014150212A (en) * 2013-02-04 2014-08-21 Nippon Steel & Sumikin Electronics Devices Inc Package for housing electronic component
CN113068333A (en) * 2015-09-15 2021-07-02 赛峰电子与防务公司 Compact electronic system and device comprising such a system
CN113068333B (en) * 2015-09-15 2022-08-05 赛峰电子与防务公司 Compact electronic system and device comprising such a system
CN112119489A (en) * 2018-08-21 2020-12-22 Ngk电子器件株式会社 Wiring substrate, package, and module
CN112119489B (en) * 2018-08-21 2024-03-12 Ngk电子器件株式会社 Wiring substrate, package, and module

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