JP2012094701A - Package for housing semiconductor element and module including the package - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a package for housing a semiconductor element which prevents the semiconductor element from causing electrical short circuits even if the size of the package for housing the semiconductor element is reduced.SOLUTION: A package for housing a semiconductor element 1 includes a first frame body 7 disposed on an upper surface of a substrate 5 so as to enclose a placement region and a second frame body 11 disposed on the first frame body so as to enclose the placement region. The first frame body has multiple side parts and multiple corners in a plain view. The second frame body has multiple side parts and multiple corners in a plain view. the corners of the second frame body are positioned on the inner side of the corners of the first frame body, and at least some parts of the corners of the second frame body face the upper surface of the substrate with no part of the first frame body disposed therebetween.

Description

  The present invention relates to a semiconductor element housing package for housing a semiconductor element such as an optical semiconductor element represented by LD (laser diode) and PD (photodiode), and a module including the same. Such a package for housing a semiconductor element is used in various electronic devices.

  As a package for housing a semiconductor element for housing a semiconductor element, for example, a package described in Patent Document 1 is known. A package described in Patent Document 1 joins a base body having a mounting portion on which a semiconductor element is mounted, a frame body mounted on the base body so as to surround the mounting portion, and the base body and the frame body. With brazing material.

JP 2000-183371 A

  In recent years, with the miniaturization of electronic devices, there has been a demand for further miniaturization of packages for housing semiconductor elements. However, when the semiconductor element storage package is further reduced in size, the distance between the semiconductor element and the frame constituting the package becomes narrower. When these intervals are narrowed, when the semiconductor element is placed, there is a possibility that the brazing material that joins the base and the frame contacts the semiconductor element to cause an electrical short circuit.

  The present invention has been made in view of the above-described problems, and provides a package for housing a semiconductor element that can suppress a semiconductor element from being electrically short-circuited even when the element package is downsized. For the purpose.

  A package for housing a semiconductor element according to one aspect of the present invention is provided on a top surface of the base body so as to surround the mounting region, and a base body having a mounting region on which the semiconductor element is mounted on the top surface. A first frame having a plurality of sides and a plurality of corners in a plan view, and positioned between the base and the first frame, and joining the base and the first frame A brazing material to be disposed on the first frame so as to surround the placement area, and a second frame having a plurality of sides and a plurality of corners when viewed in plan, It has. Further, an inner peripheral surface of the second frame body at the corner portion is positioned on an inner side of the inner peripheral surface of the corner portion of the first frame body, so that the corner portion of the second frame body At least a portion faces the upper surface of the base body without the first frame.

  In the package for housing a semiconductor element based on the above aspect, at least a part of the corner portion of the second frame is opposed to the upper surface of the base body without the first frame. Therefore, even if the brazing material joining the base and the first frame protrudes between the base and the first frame, the region where the base and the second frame are opposed to each other is brazed. It can be used as a material reservoir. As described above, since the brazing material can be stored in the above-mentioned region that is relatively far from the placement region, even if a part of the brazing material protrudes, the brazing material contacts the semiconductor element and the semiconductor. It can suppress that an element short-circuits electrically.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view showing a semiconductor element storage package and a module including the same according to a first embodiment. It is a disassembled perspective view of the element storage package shown in FIG. FIG. 2 is a plan view of the element storage package shown in FIG. 1. It is AA sectional drawing of the element storage package shown in FIG. It is a perspective view which shows the package for semiconductor element accommodation concerning 2nd Embodiment. FIG. 6 is an exploded perspective view of the element storage package shown in FIG. 5. It is BB sectional drawing of the element storage package shown in FIG. It is a perspective view which shows the modification of the package for semiconductor element storage concerning 2nd Embodiment. FIG. 9 is an exploded perspective view of the element storage package shown in FIG. 8.

  Hereinafter, a package for housing a semiconductor element (hereinafter also simply referred to as a package) according to an embodiment of the present invention and a module including the same will be described in detail with reference to the drawings. However, for convenience of explanation, the drawings to be referred to below simply show main members necessary for explaining the present invention among the constituent members of the embodiment. Therefore, the package for housing a semiconductor device according to the present invention can include any constituent member not shown in each drawing referred to in this specification. Moreover, the dimension of the member in each figure does not represent the dimension of an actual structural member, the dimension ratio of each member, etc. faithfully.

  As shown in FIGS. 1 to 4, the semiconductor element storage package 1 of the first embodiment includes a base 5 having a mounting area on which the semiconductor element 3 is mounted on the upper surface, and a base so as to surround the mounting area. 5 is disposed on the upper surface of the first plate 5 and has a plurality of side portions (hereinafter referred to as a first side portion 7a) and a plurality of corner portions (hereinafter referred to as a first corner portion 7b) when viewed in plan. The first frame body 7 is positioned between the base body 5 and the first frame body 7 and the brazing material 9 that joins the base body 5 and the first frame body 7 so as to surround the mounting area. A plurality of side portions (hereinafter referred to as second side portions 11a) and a plurality of corner portions (hereinafter referred to as second corner portions 11b) arranged on the frame body 7 in plan view. And a second frame body 11 having the same.

  The inner peripheral surface of the second corner portion 11b is positioned on the inner side of the inner peripheral surface of the first corner portion 7b, and at least a part of the second corner portion 11b is interposed through the first frame body 7. It is characterized by facing the upper surface of the base body 5. As described above, since the base 5 and the second frame 11 have regions facing each other, the brazing material 9 for joining the base 5 and the first frame 7 is the base 5 and the first frame 7. This region can be used as a brazing material reservoir even if it protrudes from between the frame 7. Therefore, even when a part of the brazing material 9 protrudes, it is possible to prevent the brazing material 9 from coming into contact with the semiconductor element 3 and electrically shorting the semiconductor element 3.

  The possibility that the brazing material 9 contacts the semiconductor element 3 and the semiconductor element 3 is electrically short-circuited can also be suppressed by simply reducing the amount of the brazing material 9 that joins the first frame 7 and the base 5. However, when the amount of the brazing material 9 that joins the first frame body 7 and the base body 5 is reduced, the jointability between the first frame body 7 and the base body 5 may be lowered. Since the package 1 of this embodiment can use the above region as a brazing material reservoir, the brazing material 9 can be used without reducing the amount of the brazing material 9 that joins the first frame 7 and the base body 5 more than necessary. The possibility of contact with the semiconductor element 3 can be suppressed.

In addition, it is an area | region where the 2nd frame 11 and the upper surface of the base | substrate 5 have opposed above without passing through the 1st frame 7, Comprising: The inner peripheral surface of the 1st frame 7, 2nd Hereinafter, a region surrounded by the lower surface of the frame 11 and the upper surface of the base body 5 will be referred to as a facing region 13 for convenience.

  Furthermore, since the opposing region 13 is installed so that the first corner 7b and the second corner 11b do not overlap, the stress concentrated on the first corner 7b and the second corner 11b. Are prevented from overlapping at the joint, and this stress is dispersed. Further, the brazing material 9 in which stress from the lateral direction, the longitudinal direction, and the oblique direction due to the difference in thermal expansion coefficient between the base body 5, the first corner portion 7 b, and the second corner portion 11 b is accumulated in the facing region 13. Can be dispersed. As a result, cracks and peeling at the joints between the base body 5, the first frame body 7, and the second frame body 11 are suppressed, so that the module 27 can be operated normally.

  Moreover, the package 1 of this embodiment also has the following advantages. When the package is further miniaturized, it is required to reduce the thickness of the frame body in order to secure a region for placing the semiconductor element. On the other hand, when the frame body has a plurality of side portions and a plurality of corner portions when viewed in plan, stress tends to concentrate in the vicinity of the corner portions. And when the thickness of a frame becomes small, a frame may peel from a base | substrate in the corner | angular part of a frame.

  However, since the package 1 of the present embodiment has the above-described opposed region 13 and can be used as a brazing material reservoir, the base 5 and the first frame 7 at the first corner 7b. Bondability can be improved. Therefore, durability as the package 1 can be improved.

  The base body 5 in the present embodiment has a square plate shape, and has a placement area on which the semiconductor element 3 is placed on the main surface. In the present embodiment, the placement region means a region that overlaps the semiconductor element 3 when the base 5 is viewed in plan.

  In the present embodiment, the placement region is formed at the center of the main surface. However, since the region where the semiconductor element 3 is placed is the placement region, for example, at the end of the main surface of the base 5. There is no problem even if the mounting area is formed. Moreover, although the base body 5 of the present embodiment has one placement area, the base body 5 may have a plurality of placement areas, and the semiconductor element 3 may be placed in each placement area. .

  As shown in FIG. 3, the base 5 in the package 1 of the present embodiment is screwed to a mounting board (not shown) on which the base 5 is mounted, which extends to the side of the first frame 7. The screwing part 15 is provided. When the package 1 is screwed to the mounting substrate by the screwing part 15, a pressing force is applied to the screwing part 15. This pressing force is transmitted to a region surrounded by the first frame body 7 and the second frame body 11 of the base body 5, but in the package 1 of the present embodiment, before the pressing force is transmitted. Since the facing region 13 is located, there is a possibility that the first frame 7 is peeled off from the base body 5 by the above pressing force, or the second frame 11 is peeled off from the first frame 7. Can be reduced.

  The base 5 according to the present embodiment is manufactured by stacking a plurality of insulating substrates. Then, the semiconductor element 3 is placed on the placement region of the base body 5. Examples of the insulating substrate include a ceramic material such as an aluminum oxide sintered body, a mullite sintered body, a silicon carbide sintered body, an aluminum nitride sintered body, and a silicon nitride sintered body, or a glass ceramic. Materials can be used.

A mixing member is prepared by mixing the raw material powder containing these glass powder and ceramic powder, an organic solvent, and a binder. A plurality of ceramic green sheets are produced by forming the mixed member into a sheet. A laminated body is produced by laminating a plurality of produced ceramic green sheets. The base body 5 is produced by firing the laminate at a temperature of about 1600 degrees.

  The base 5 is not limited to a configuration in which a plurality of insulating substrates are stacked. The base body 5 may be constituted by one insulating substrate. Moreover, since it is calculated | required that the base | substrate 5 has high insulation at least in the mounting area | region in which the semiconductor element 3 is mounted, it is good also as a structure which laminated | stacked the insulating board | substrate on the metal substrate, for example. . In particular, when high heat dissipation is required for the base 5, the base 5 is preferably configured as described above. This is because the metal member has high heat dissipation. By adopting a configuration in which an insulating substrate is laminated on a metal substrate, the heat dissipation of the base 5 can be enhanced.

  Specifically, metal members such as iron, copper, nickel, chromium, cobalt, and tungsten, or alloys made of these metals can be used. A metal substrate constituting the substrate 5 can be manufactured by subjecting such an ingot of a metal member to a metal processing method such as a rolling method or a punching method.

  The first frame 7 in the package 1 of the present embodiment is disposed on the upper surface of the base body 5 so as to surround the placement area when viewed in plan. The first frame 7 has a plurality of first sides 7a and a plurality of first corners 7b when viewed in plan. Specifically, the first frame body 7 in the present embodiment has a shape such that the inner peripheral surface and the outer peripheral surface are each substantially square when viewed in plan. The portions corresponding to these four sides of the quadrangle are set as first side portions 7a. The four first side portions 7a intersect with each other, and the four portions corresponding to the tops of these quadrangles are defined as first corner portions 7b.

  At this time, it is preferable that the inner peripheral surface and the outer peripheral surface of the first frame 7 in the first corner portion 7b have a curved shape. As already indicated, stress tends to concentrate in the vicinity of the first corner 7b. However, because the inner peripheral surface and the outer peripheral surface of the first frame 7 at the first corner 7b are curved, durability against the stress of the first corner 7b can be improved. .

  As the first frame 7, for example, a metal member such as iron, copper, nickel, chromium, cobalt and tungsten, or an alloy made of these metals can be used. The first frame 7 made of a metal member can be manufactured by subjecting such an ingot of the metal member to a metal processing method such as a rolling method or a punching method. A ceramic member may be used as the first frame 7. Moreover, although the 1st frame 7 may consist of one member, the laminated structure of a some member may be sufficient as it.

  The first frame body 7 is joined to the base body 5 via a joining member located between the base body 5 and the first frame body 7. An exemplary joining member includes a brazing material 9 such as silver brazing.

  The width of the brazing material 9 is preferably larger than the thickness of the first frame 7 in order to improve the bondability between the base 5 and the first frame 7. When the width of the brazing material 9 is larger than the thickness of the first frame body 7, the bondability between the base body 5 and the first frame body 7 can be improved. At this time, a meniscus portion of the brazing material 9 is formed between the inner peripheral surface of the first frame body 7 and the upper surface of the base body 5 in order to further improve the bondability between the base body 5 and the first frame body 7. Preferably it is.

The second frame 11 in the package 1 of the present embodiment is disposed on the first frame 7 so as to surround the placement area when viewed in plan. The second frame 11 has a plurality of second side portions 11a and a plurality of second corner portions 11b when viewed in plan. Specifically, the second frame body 11 in the present embodiment has a shape such that the inner peripheral surface and the outer peripheral surface are each substantially rectangular when viewed in plan, like the first frame body 7. ing. The portions corresponding to these four sides of the quadrangle are set as second side portions 11a. In addition, the four second side portions 11a intersect with each other, and the portions corresponding to the tops of these quadrangles are the second corner portions 11b.

  At this time, for example, similarly to the first frame 7, it is preferable that the inner peripheral surface and the outer peripheral surface of the second frame 11 in the second corner portion 11b are curved. As already shown, stress tends to concentrate in the vicinity of the second corner 11b. However, because the inner peripheral surface and the outer peripheral surface of the second frame 11 at the second corner portion 11b are curved, durability against the stress of the second corner portion 11b can be improved. .

  At this time, when the first frame body 7 and the second frame body 11 are viewed in plan, the curvature of the inner peripheral surface of the first corner portion 7b is greater than the curvature of the inner peripheral surface of the second corner portion 11b. The second corner portion 11b can be easily positioned on the inner side of the first corner portion 7b.

  As the second frame 11, similarly to the first frame 7, for example, a metal member such as iron, copper, nickel, chromium, cobalt, and tungsten, or an alloy made of these metals can be used. . A ceramic member may be used as the second frame body 11. The second frame 11 may be composed of one member, but may be a laminated structure of a plurality of members.

  In addition, it is good for the base | substrate 5, the 1st frame 7, and the 2nd frame 11 to combine the material from which the difference of each thermal expansion coefficient becomes small. Thereby, the stress generated due to the difference in thermal expansion coefficient among the base body 5, the first frame body 7, and the second frame body 11 is reduced, and the first frame body 7 peels from the base body 5. The possibility that the frame body 11 is peeled off from the first frame body 7 or the package 1 is warped can be reduced. More preferably, by using the same material as the base body 5, the first frame body 7, and the second frame body 11, the difference in thermal expansion coefficient between the base body 5, the first frame body 7, and the second frame body 11. The stress generated due to this can be further reduced. Therefore, it is possible to reduce the possibility that the first frame 7 is peeled off from the base 5, the second frame 11 is peeled off from the first frame 7, or the package 1 is warped.

  The first frame body 7 and the second frame body 11 in the package 1 of this embodiment are joined so that the semiconductor element 3 is sealed. The first frame body 7 and the second frame body 11 can be joined via a joining member such as gold-tin solder, for example. When ceramic members are used as the first frame body 7 and the second frame body 11, the ceramic green sheet to be the second frame body 11 on the ceramic green sheet to be the first frame body 7. The first frame body 7 and the second frame body 11 may be joined by laminating and baking together.

  The package 1 of the present embodiment includes a plurality of wiring conductors 17 disposed as input / output terminals on the first frame 7 and between the second frame 11. Signals can be input / output between the semiconductor element 3 and external wiring (not shown) via these wiring conductors 17.

  When insulating members such as ceramic members are used as the first frame body 7 and the second frame body 11, a plurality of wiring conductors 17 are connected to the first frame body as shown in FIG. What is necessary is just to clamp by the body 7 and the 2nd frame 11. Further, when a conductive member such as a metal member is used as the first frame body 7 and the second frame body 11, a plurality of the first frame body 7 and a plurality of the first frame body 7 are used in order to prevent an electrical short circuit. Insulating members may be disposed between the wiring conductors 17 and between the second frame body 11 and the plurality of wiring conductors 17.

The plurality of wiring conductors 17 are located from the inside to the outside of the region surrounded by the first frame body 7 and the second frame body 11, respectively. Thereby, electrical connection can be achieved between the inner side and the outer side of the region surrounded by the first frame body 7 and the second frame body 11. The plurality of wiring conductors 17 are arranged at predetermined intervals so as not to be electrically short-circuited with each other.

  As the wiring conductor 17, it is preferable to use a member having good conductivity. Specifically, a metal material such as tungsten, molybdenum, nickel, copper, silver and gold can be used as the wiring conductor 17. The above metal materials may be used alone or as an alloy.

  The wiring conductor 17 is electrically connected to external wiring (not shown) via the lead terminal 19 and the like. As the lead terminal 19, it is preferable to use a member having good conductivity like the wiring conductor 17. Specifically, a metal material such as tungsten, molybdenum, nickel, copper, silver, and gold can be used as the lead terminal 19. The above metal materials may be used alone or as an alloy.

  In the package 1 of the present embodiment, the second corner 11b of the second frame 11 is positioned on the inner side of the first corner 7b of the first frame 7, and the second corner 11b of the second frame 11 At least a portion has a facing region 13 that faces the upper surface of the base body 5 without the first frame 7 interposed therebetween. As described above, since the brazing material 9 can be stored in the facing region 13 by having such a facing region 13, the brazing material 9 even if a part of the brazing material 9 protrudes. It can suppress that 9 contacts the semiconductor element 3 and the semiconductor element 3 electrically short-circuits.

  In the package 1 of the present embodiment, a notch groove 21 is formed on the inner peripheral surface of the first corner 7 b in the first frame 7. Then, at least a part of the second corner portion 11 b of the second frame body 11 faces the upper surface of the base body 5 without the first frame body 7 through the notch groove 21.

  Since the notch groove 21 is formed on the inner peripheral surface of the first corner portion 7b as described above, the inner peripheral surface of the first corner portion 7b is outside the inner peripheral surface of the second corner portion 11b. Can be located. Therefore, the second corner 11 b in the second frame 11 can be positioned on the inner side than the first corner 7 b in the first frame 7.

  Moreover, when the notch groove 21 is formed in the inner peripheral surface of the first corner 7b, the second corner 11b is simply compared with the case where the second corner 11b is positioned inside the first corner 7b. Thus, the distance between the inner peripheral surface of the first corner 7b and the semiconductor element 3 can be increased. Therefore, it is possible to further reduce the possibility that the brazing material 9 accumulated in the facing region 13 comes into contact with the semiconductor element 3. Therefore, it is possible to more reliably suppress the semiconductor element 3 from being electrically short-circuited.

  Further, it is preferable that a metallized layer is disposed on the inner peripheral surface of the first corner 7 b in the first frame 7. Since the metallized layer having good wettability with respect to the brazing material 9 is disposed on the inner peripheral surface of the first corner portion 7 b facing the facing region 13, the brazing material 9 can be easily collected in the facing region 13. Because it becomes. For the same reason, it is preferable that a metallized layer is also disposed on the lower surface of the second frame 11 facing the facing region 13 and the upper surface of the substrate 5.

  Specifically, a metal material such as tungsten, molybdenum, nickel, copper, silver, and gold can be used as the metallized layer. The above metal materials may be used alone or as an alloy.

Furthermore, when the metallized layer is disposed on the inner peripheral surface of the first corner 7b in the first frame 7, the inner peripheral surface of the first side 7a in the first frame 7 and It is preferable that the metallized layer is not formed on the inner peripheral surface of the second side portion 11a in the second frame 11. This is because when the metallized layer is formed in this manner, the brazing material 9 can be stably accumulated in the facing region 13, so that it is easy to suppress the brazing material 9 from flowing to an unexpected region.

  The package 1 of this embodiment includes a mounting substrate 23 for mounting the semiconductor element 3 disposed on the mounting area. Although the semiconductor element 3 may be mounted directly on the base 5, the semiconductor element 3 is mounted on the mounting substrate 23 as well as the mounting substrate 23 as in the package 1 of the present embodiment. It is preferable to be placed. This is because the possibility that the brazing material 9 contacts the semiconductor element 3 can be reduced even if a part of the brazing material 9 flows into the placement region.

  As the mounting substrate 23, it is preferable to use a member having good insulation like the insulating substrate. For example, an aluminum oxide sintered body, a mullite sintered body, a silicon carbide sintered body, and an aluminum nitride material are used. Ceramic materials such as sintered bodies and silicon nitride-based sintered bodies, or glass ceramic materials can be used.

  Next, the semiconductor element housing package 1 of the second embodiment will be described in detail with reference to the drawings. In addition, in each structure concerning this embodiment, about the structure which has the same function as 1st Embodiment, the same referential mark is attached and the detailed description is abbreviate | omitted.

  As shown in FIGS. 5 to 7, the base body 5 in the semiconductor element housing package 1 of the second embodiment is an upper surface and at least a part of the second corner portion 11 b without the first frame body 7. And a recess 25 in the region facing the. In other words, the base 5 in the package 1 of the present embodiment has the recess 25 in at least a part of the portion facing the facing region 13. By having such a recess 25, more brazing material 9 can be stored in the facing region 13 while ensuring the thickness of the first frame 7 at the first corner 7 b. Therefore, the possibility that the brazing material 9 contacts the semiconductor element 3 can be further suppressed.

  The base body 5 in the package 1 of the present embodiment has a recess 25 formed in a portion overlapping the inner peripheral surface of the first frame 7 when viewed in plan. Specifically, for example, as shown in FIG. 7, the shape of the recess 25 may be a configuration having a bottom surface and two side surfaces positioned so as to sandwich the bottom surface when the recess 25 is viewed in cross section. At this time, it is preferable that the boundary portion between the bottom surface and the side surface has a curved surface shape. This is because when the brazing material 9 accumulates in the recess 25, it is possible to suppress the local concentration of stress applied to the base 5 due to the expansion and contraction of the brazing material 9. In addition, even if the recessed part 25 is a semicircular curved surface shape, the same effect is obtained. For the same reason, when the base 5 is viewed in plan, it is preferable that the corner of the opening edge of the recess 25 is not a bent shape but a curved shape.

  The depth of the recess 25 is preferably larger than the thickness of the brazing material 9 located between the base body 5 and the first frame 7. Thereby, even if a part of the brazing material 9 protrudes from between the base body 5 and the first frame body 7, the brazing material 9 can be stably stored in the recess 25. Therefore, the possibility that the brazing material 9 adheres to the semiconductor element 3 can be reduced.

Further, the depth of the recess 25 is preferably 10 to 50% with respect to the thickness of the substrate 5. By being 10% or more, the brazing material 9 can be stably accumulated in the recess 25. Further, the portion of the base 5 located below the recess 25 is relatively small in thickness, but the depth of the recess 25 is 50% or less with respect to the thickness of the base 5, so that the above relative In particular, a sufficient thickness of the substrate 5 can be ensured even in a portion having a small thickness. As a result, it is possible to suppress the durability of the base body 5 from being excessively lowered, and it is easy to diffuse the heat generated in the semiconductor element 3 toward the first side portions 7b. Therefore, the base 5
Therefore, the heat dissipation of the substrate 5 can be kept good.

  In addition, the shape of the recess 25 when the base 5 is viewed in plan may be a so-called U-shape that spans two adjacent first corners 7b as shown in FIGS. 8 and 9 may be used. That is, as shown in FIGS. 8 and 9, the concave portions 25 are respectively formed in the regions of the upper surface of the base body 5 facing at least a part of the corners of the second frame body 11 without the first frame body 7 interposed therebetween. And the recesses 25 may be spaced apart from each other.

  When the concave portion 25 is formed on the base body 5, the thickness of the portion where the concave portion 25 is formed is relatively small, so that the heat generated in the semiconductor element 3 may not be easily diffused in the concave portion 25. . However, when the concave portion 25 is formed as shown in FIGS. 8 and 9, the heat generated in the semiconductor element 3 is easily diffused in the direction of the respective first side portions 7b. Accordingly, since the heat diffusion in the base 5 can be performed satisfactorily, the heat dissipation of the base 5 can be kept good.

  Next, the module 27 according to an embodiment of the present invention will be described in detail with reference to the drawings.

  As shown in FIG. 1, the module 27 of the present embodiment includes a semiconductor element storage package 1 typified by the above embodiment, and a semiconductor element 3 mounted in the mounting region of the semiconductor element storage package 1. And a lid 29 that is bonded to the second frame 11 and seals the semiconductor element 3.

  In the module 27 of the present embodiment, the optical semiconductor element 3 is placed as the semiconductor element 3 in the placement area of the base 5. In addition, the semiconductor element 3 and the wiring conductor 17 are electrically connected via a conducting wire 31. A desired output can be obtained from the semiconductor element 3 by inputting an external signal to the semiconductor element 3 via the lead terminal 19, the wiring conductor 17 and the conducting wire 31. The semiconductor element 3 and the wiring conductor 17 can be electrically connected to each other by so-called wire bonding, for example, via a conducting wire 31.

  The lid 29 is joined to the second frame 11 and is provided so as to seal the semiconductor element 3. The lid 29 is joined to the upper surface of the second frame 11. The semiconductor element 3 is sealed in a space surrounded by the base body 5, the first frame body 7, the second frame body 11, and the lid body 29. By sealing the semiconductor element 3 in this way, it is possible to suppress the deterioration of the semiconductor element 3 due to the long-term use of the package 1.

  As the lid 29, for example, a metal member such as iron, copper, nickel, chromium, cobalt and tungsten, or an alloy made of these metals can be used. Moreover, the 2nd frame 11 and the cover body 29 can be joined by the seam welding method, for example. Moreover, you may join the 2nd frame 11 and the cover body 29 using a gold- tin solder, for example.

  As described above, the semiconductor element storage package 1 and the module 27 including the semiconductor element storage package 1 according to the embodiment of the present invention have been described, but the present invention is not limited to the above-described embodiment. In other words, various modifications and combinations of embodiments may be made without departing from the scope of the present invention.

1 ... Package for element storage (package)
DESCRIPTION OF SYMBOLS 3 ... Semiconductor element 5 ... Board | substrate 7 ... 1st frame 7a ... 1st edge part 7b ... 1st corner | angular part 9 ... Brazing material 11 ... 2nd Frame 11a ... second side 11b ... second corner 13 ... opposing region 15 ... screwing part 17 ... wiring conductor 19 ... lead terminal 21 ... Notch groove 23 ... mounting substrate 25 ... recess 27 ... module 29 ... lid 31 ... conducting wire

Claims (8)

A substrate having a mounting region on which the semiconductor element is mounted;
A first frame having a plurality of sides and a plurality of corners when viewed from above, disposed on the upper surface of the base so as to surround the placement region;
A brazing material positioned between the base body and the first frame body and joining the base body and the first frame body;
A second frame having a plurality of sides and a plurality of corners when viewed from above, disposed on the first frame so as to surround the placement area;
An inner peripheral surface at the corner of the second frame is located on an inner side of an inner peripheral surface at the corner of the first frame, and at least one of the corners of the second frame. A package for housing a semiconductor element, characterized in that the portion faces the upper surface of the base body without going through the first frame.   A notch groove is formed in the inner peripheral surface of the corner portion of the first frame body, and at least a part of the corner portion of the second frame body is interposed through the first frame body through the notch groove. The package for housing a semiconductor element according to claim 1, wherein the package is opposed to the upper surface of the substrate.   A part of the brazing material is disposed in a region where at least a part of the corner of the second frame and the upper surface of the base face each other without the first frame. The package for housing a semiconductor device according to claim 1.   The package for housing a semiconductor element according to claim 1, further comprising a metallized layer disposed on an inner peripheral surface of the corner portion of the first frame.   5. The semiconductor according to claim 4, wherein a metallized layer is not formed on an inner peripheral surface of the side portion of the first frame body and an inner peripheral surface of the side portion of the second frame body. Package for element storage.   The base has a recess in a region facing the at least a part of the corner of the second frame without passing through the first frame on the upper surface. The package for housing a semiconductor device according to claim 1.   When the first frame body and the second frame body are viewed in plan, the curvature of the inner peripheral surface of the corner portion of the first frame body is the inner periphery of the corner portion of the second frame body. 2. The package for housing a semiconductor element according to claim 1, wherein the package is larger than a curvature of the surface. A package for housing a semiconductor element according to any one of claims 1 to 7,
The semiconductor element placed in the placement area of the semiconductor element storage package;
A module comprising: a lid body that is bonded to the second frame body and seals the semiconductor element.

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