JP6698492B2 - Semiconductor package and semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor package for housing a semiconductor element and a semiconductor device using the same.

2. Description of the Related Art In recent years, semiconductor packages and semiconductor devices that house semiconductor elements such as ICs (Integrated Circuits), LSIs (Large-Scale Integration), and power devices are required to have airtightness during sealing (see Patent Document 1). ).

JP, 2013-16658, A

  The technique disclosed in Patent Document 1 is a semiconductor package, in a semiconductor package, a frame having a through hole provided surrounding the upper surface of the substrate, an input/output terminal provided in the through hole, and an upper end of the frame. And a lid joined to the. The lid has chamfered corners, so that the brazing material can be stored in a place that is likely to be a starting point of peeling off the joint with the frame. However, in this configuration, since the brazing material is stored in the corners, stress may be applied to the corners due to the difference in thermal expansion coefficient between the lid, the frame, and the brazing material. Therefore, it may be difficult to hermetically seal.

  A semiconductor package according to one embodiment of the present invention includes a rectangular substrate, a frame body that surrounds an upper surface of the substrate, has a rectangular outer edge and an inner edge in a plan view, and has a rectangular shape in a plan view. A lid body having a joint region joined to the upper surface of the frame body, and a cover body having a notch portion with a side surface cut out at a position closer to a corner than a midpoint of each side in a plan view, A metallized layer is provided on the joint region of the lid and the surface of the cutout.

  A semiconductor device according to an embodiment of the present invention includes the semiconductor package described above and a semiconductor element mounted on the upper surface of the substrate.

  With the configuration as described above, the semiconductor package according to the embodiment of the present invention can favorably maintain the sealed state of the semiconductor package. In addition, the semiconductor device according to the embodiment of the present invention can be used in a state where the semiconductor package is maintained in a good sealing state by including the semiconductor package as described above.

It is a perspective view showing a semiconductor device concerning one embodiment of the present invention. It is a bottom view showing a lid of a semiconductor package concerning one embodiment of the present invention. It is a top view showing a lid of a semiconductor package concerning one embodiment of the present invention. FIG. 4A is a perspective view showing a lid of a semiconductor package according to an embodiment of the present invention, FIG. 4A is a perspective view showing a lower surface of the lid, and FIG. 4B is a top view of the lid. It is a perspective view. FIG. 5A is an enlarged view of a corner portion of a lid of a semiconductor package according to an embodiment of the present invention, and FIG. 5A is an enlarged view of a corner portion of a lid of a semiconductor package according to an embodiment of the present invention; FIG. 5B is an enlarged view of a corner portion of the lid of the semiconductor package according to another embodiment of the present invention. FIG. 7 is an enlarged view of a corner portion of a lid of a semiconductor package according to another embodiment of the present invention. FIG. 7A is a perspective view showing a semiconductor package (without a lid) according to one embodiment of the present invention, FIG. 7A is a top perspective view of the semiconductor package according to one embodiment of the present invention, and FIG. 4] is a bottom perspective view of a semiconductor package according to an embodiment of the present invention. It is a perspective view showing a semiconductor device concerning one embodiment of the present invention.

  Hereinafter, a semiconductor package and a semiconductor device according to embodiments of the present invention will be described with reference to the drawings.

<Structure of semiconductor package>
1 is a perspective view of a semiconductor device 10 according to one embodiment of the present invention, FIG. 2 is a bottom view of a lid 6 of a semiconductor package 1 according to one embodiment of the present invention, and FIG. 3 is one embodiment of the present invention. 4 is a top view of the lid 6 of the semiconductor package 1 according to the embodiment, and FIG. 4 is a perspective view of the lid 6 of the semiconductor package 1 according to the embodiment of the present invention. Further, FIG. 5 is an enlarged view of a corner portion of a lid of a semiconductor package according to an embodiment of the present invention, and FIG. 6 is an enlarged view of a corner portion of a lid of a semiconductor package according to another embodiment of the present invention. FIG. 7 is a perspective view showing a semiconductor package (without a lid) according to an embodiment of the present invention. 4A is a perspective view showing the lower surface of the lid, and FIG. 4B is a perspective view showing the upper surface of the lid. 5A is an enlarged view of a corner portion of a lid of a semiconductor package according to an embodiment of the present invention, and FIG. 5B is a lid of a semiconductor package according to another embodiment of the present invention. It is an enlarged view of the corner part of. 7A is a top perspective view of the semiconductor package according to the embodiment of the present invention, and FIG. 7B is a bottom perspective view of the semiconductor package according to the embodiment of the present invention. In these figures, the semiconductor package 1 includes a substrate 2, a frame 3 and a lid 6.

  The substrate 2 is a plate-shaped member having a rectangular shape when viewed in a plan view, and has a mounting area for mounting the semiconductor element 5 in the central portion of the upper surface. Further, as shown in FIG. 7, the substrate 2 is provided with a first electrode portion 2a electrically connected to the semiconductor element 5 at a position close to the mounting region on the upper surface. Further, the second electrode portion 2b electrically connected to the first electrode portion 2a via the electric wiring provided inside the substrate 2 is provided on the lower surface of the substrate 2, and the semiconductor element 5 and the second electrode portion are provided. 2b is electrically connected. The mounting region is a region surrounded by the rectangular frame 3 when the substrate 2 is viewed in a plan view, and means a region in which the semiconductor element 5 is mounted.

  The substrate 2 is an insulating material such as an aluminum oxide sintered body, a mullite sintered body, a silicon carbide sintered body, an aluminum nitride sintered body, a silicon nitride sintered body, or a glass ceramic. Composed of ceramic material. The size of the substrate 2 is, for example, 5 mm×50 mm to 5 mm×50 mm in plan view, and the thickness is 0.3 mm to 3 mm. Further, the substrate 2 may have a structure that efficiently radiates the heat generated from the semiconductor element 5 to the outside of the semiconductor package 1. That is, the substrate 2 is a metal material such as iron, copper, nickel, chromium, cobalt, or tungsten, or an alloy or composite made of the above metal materials, so as to penetrate the upper and lower surfaces of the substrate 2 in the mounting region. The material may be incorporated and bonded and fixed. Thereby, the semiconductor package 1 can improve the heat dissipation of the substrate 2.

The frame 3 is located on the upper surface of the substrate 2. The frame body 3 is a member for ensuring a space for housing the semiconductor element 5. The frame 3 is provided so as to surround the mounting area. The frame 3 is
The shapes of the inner edge and the outer edge when seen in a plan view are rectangular frame shapes. The sides of the rectangular frame 3 are provided so as to be parallel to the sides of the substrate 2. In addition, the frame 3 may be provided with a first metal layer on an upper surface that is a surface facing the lid 5. Further, when the frame body 3 is integrally provided on the upper surface of the substrate 2, the frame body 3 made of a ceramic material may be provided by firing at the same time as the substrate 2. When the frame body 3 is provided on the upper surface of the substrate 2 as a separate member, the second metal layer is provided on the upper surface of the substrate 2 made of a ceramic material, and the second metal layer is provided on the lower surface of the frame body 3 made of a ceramic material. Three metal layers are provided, and the third metal layer is joined to the second metal layer provided on the upper surface of the substrate 2 through a joining material such as a low melting point brazing material made of gold (Au)-tin (Sn). May be provided.

  When the frame body 3 is made of a metal material, the frame body 3 may have through holes formed so as to contact the substrate 2 in the inner and outer directions of at least one surface of the rectangle. The frame 3 has a through hole provided from the lower surface to the upper surface. The input/output terminal is fitted into the through hole, and the input/output terminal penetrates through the metal layer of the input/output terminal provided on the surface in contact with the through hole and the bonding material such as the low melting point brazing material made of Au-Sn. It may be fixed by being joined to the hole.

  The frame 3 is made of an insulating material, for example, an aluminum oxide sintered body, a mullite sintered body, a silicon carbide sintered body, an aluminum nitride sintered body, a silicon nitride sintered body, or glass ceramics. Ceramic materials such as Further, as the frame body 3, for example, a metal material such as iron, copper, nickel, chromium, cobalt or tungsten can be used. Alternatively, alloys composed of these metals can be used. The size of the frame body 3 is, for example, 5 mm×50 mm to 5 mm×50 mm in plan view, and the thickness thereof is 0.5 mm to 2 mm. The height of the frame 3 is, for example, 1 mm to 10 mm.

  The lid 6 is joined to the upper surface of the frame 3 with a joining material such as a brazing material or solder so as to close the inside of the frame 3. The lid body 6 has a rectangular shape in a plan view, and has a bonding region 61 joined to the upper surface of the frame body 3 facing the lid body 6 on the lower surface facing the frame body 3. There is. Further, the lid body 6 has a notch portion 63 cut out from the lower surface to the side surface of the lid body 6 at a position closer to the corner portion 62 of the lid body 6 than the midpoint of each side of the lid body 6 in plan view. is doing. Further, a metallized layer 64 is provided on the surfaces of the joint region 61 and the cutout portion 63 of the lid body 6.

  The lid 6 has, for example, the same size as the outer edge of the frame 3 in a plan view, and has a thickness of 0.5 mm to 5 mm. The lid 6 is made of, for example, an insulating material. For example, a ceramic material such as an aluminum oxide sintered body, a mullite sintered body, a silicon carbide sintered body, an aluminum nitride sintered body, a silicon nitride sintered body, or glass ceramics can be used. When the lid body 6 is made of an insulating material, the lid body 6 may be made of a single layer of insulating material, or may be formed by laminating a plurality of insulating layers.

  When the lid body 6 is made of an insulating layer, it is made of, for example, two layers. As shown in FIG. 5A, the upper corner 62a and the lower corner 62b may have the same shape. Further, the shapes may be different. As will be described later, even when the corner portion 62 is chamfered, only the corner portion 62b may be chamfered, or both the corner portion 62a and the corner portion 62b may be chamfered.

  The bonding area 61 is provided on the lower surface of the lid body 6. The bonding region 61 is a region in which a metallization layer 64 described later is formed. The joining region 61 has, for example, a frame shape and is joined to the frame body 3 via a joining material or the like. The width of the joining region 61 is, for example, 0.2 mm to 5 mm.

The cutout portion 63 is provided from the lower surface to the side surface of the lid body 6. In particular, it is preferable that the lid 6 be cut out from the lower surface to the outer side surface. At this time, since the notch portion 63 is provided from the lower surface, which is a joint surface with the frame body 3, to the outer side surface, a bonding material such as a brazing material or a solder that bonds the lid body 6 to the frame body 3 is a semiconductor. It is possible to prevent the element 5 from flowing into the inside of the frame 3 in which the element 5 is mounted.

  Further, the cutout portion 63 may be cut out at a depth of, for example, about 10% to 50% with respect to the width of the bonding region 61 in a plan view. If it is about 10% to 50%, the thermal stress and residual stress generated during the manufacturing process of the semiconductor package 1, the environmental test, and the operation of the semiconductor device 10 are maintained while maintaining the joint area between the lid 6 and the frame 3. It is possible to make it difficult for the bonding material to collect in the corners 62 where the areas are concentrated. In addition, the notch portion 63 is cut out in a length direction of one side of the lid body 6 with a length of about 10% to 40% with respect to the length of one side, and the depth direction of the lid body 6 in the thickness direction is reduced. The depth is about 20% to 70% with respect to the thickness of the lid body 6, and is cut out.

  The metallization layer 64 provided on the surfaces of the bonding region 61 and the cutout portion 63 of the lid 6 has, for example, tungsten, molybdenum, or manganese as a lower layer, and improves the bonding property and the wettability to the bonding material in the upper layer. Therefore, nickel plating or gold plating is provided. Since the metallized layer 64 is provided in the joining region 61 and the notch 63, the joining property between the frame body 3 and the lid body 6 via the joining material such as solder is improved and the direction in which the joining material flows. Will be easier to control.

  As shown in FIG. 6, the metallized layer 64 may be provided on the surface of the corner portion 62. In particular, it may be provided on both the corners 62a and 62b, or only one of them may be provided. By forming the metallized layer 64 also on the corners 62, the area where the bonding material is bonded is increased, so that the bondability between the lid 6 and the frame 3 is improved.

  The semiconductor package 1 has the notch 63 at a position near the corner 62 of the lid 6 and the metallization layer 64 on the surface thereof, so that a bonding material such as a brazing material or solder easily flows into the notch 63. Therefore, it is possible to prevent the bonding material from accumulating in the corner portion 62. That is, the thermal stress generated in the corner portion 62 due to the difference in thermal expansion coefficient between the frame body 3, the lid body 6 and the bonding material can be reduced.

  The corner portion 62 has a long distance from the central portion of the semiconductor package 1, which is the center of thermal expansion and contraction of the semiconductor package 1, and the lid 6 is most likely to be loaded by thermal stress. Therefore, by reducing the load due to the thermal stress applied to the corner portion 62, the joint between the lid 6 and the frame 3 can be easily maintained, and cracks generated in the lid 6 and the bonding material can be suppressed. . Further, since the notch portion 63 is located near the corner portion 62, the corner portion 62 may be a starting point of peeling of the lid body 6, and further, the lid body 6 and the bonding material located at the corner portion 62 may be cracked. It is also possible to suppress the possibility of occurrence of. That is, the lid 6 is provided with the joining material in the notch 63 at a position appropriately close to the corner portion 62, so that the thermal stress caused by the difference in thermal expansion coefficient between the lid 3, the lid 6 and the joining material is reduced. At the same time, the joint strength between the frame 3 and the lid 6 can be appropriately maintained.

  The semiconductor package 1 according to the embodiment of the present invention described above can maintain a good sealed state of the semiconductor package 1 due to the configuration as described above. That is, when the lid 6 is joined, the joining material on each side flows into the notch 63 provided near the corner 62 as it spreads toward the corner 62. Further, even if the corner portion 62 has an excessive bonding material, it is possible to spread the cutout portion 63 from the corner portion 62 toward the cutout portion 63. Further, in the corner portion 62, the stress generated between the lid body 6, the frame body 3 and the bonding material can be reduced.

Further, as shown in FIG. 5B, the corner 62 of the lid 6 may be chamfered. At this time, the chamfer is formed not in the thickness direction of the lid body 6 but in the width direction of the lid body 6. Specifically, the chamfering of the lid body 6 may be linear or chamfered. When the corner portion 62 has a curved shape, a curved line may be drawn on either of the irregularities. Since the corners 62 are chamfered in this manner, it is possible to prevent cracks from occurring in the corners 62 which are most likely to be loaded by thermal stress, and to prevent the lid 6 from peeling off from the frame 3. That is, in the semiconductor package 1, the sealed state can be improved.

  Further, the lid body 6 may have a cutout portion 63 on the side surface located on the opposite side. That is, one set of the corner portions 62 of the lid body 6 is provided at positions on the diagonal line of the lid body 6. This makes it possible to reduce the load of thermal stress generated in the corners 62 of the lid 6 evenly in the lid 6. This is because it is possible to prevent the bonding material from accumulating symmetrically at the corners 62, so that the load applied to the lid body 6 becomes symmetrical.

  Further, the lid body 6 may have the cutout portions 63 on all sides. Since the cutout portions 63 are provided at both ends of all the corner portions 62, it is possible to prevent the bonding material such as the brazing material and the solder from accumulating in all the corner portions 62. The thermal stress can be reduced most, and the thermal stress generated in the corner portion 62 of the lid 6 can be reduced evenly in the lid 6. This is because it is possible to make it difficult for the bonding material to accumulate in all the corner portions 62. As a result, it is possible to suppress the occurrence of cracks due to stress at all corners 62. Moreover, since the possibility that the lid body 6 is distorted can be reduced, the sealed state of the semiconductor package 1 can be improved.

  At this time, the cutout portion 63 may be provided on two adjacent sides of the lid body 6 with the corner portion 62 interposed therebetween. In this case, the stress applied to one corner 62 can be relaxed symmetrically. At this time, notches 63 may be provided at both ends of all corners 62. That is, the cover body 6 may be provided with the cutout portions 63 on both sides with the corner portions 62 interposed therebetween. In this case, since it becomes difficult for the bonding material to collect in the corners 62, the stress generated in the corners 62 can be reduced more effectively. As a result, it is possible to suppress the occurrence of cracks due to stress at the corners 62. Moreover, since the possibility that the lid body 6 is distorted can be reduced, the sealed state of the semiconductor package 1 can be improved.

  When the cutout portion 63 is provided on two sides of the lid 6 that are adjacent to each other on both sides of the corner portion 62, the cutout portion 63 is provided symmetrically on one side. It is good to be there. In this case, it is possible to reduce the amount of the bonding material accumulated in the corner portion 62 on one side of the lid body 6 to the same extent. Therefore, the stress generated in the lid 6 can be made symmetrical. That is, when the notch portion 63 having the same distance and the same size from the center of one side is provided, the load of stress on the lid body 6 is more effectively reduced. As a result, it is possible to prevent the corner portion 62 from being cracked. As a result, it is possible to suppress the occurrence of cracks due to stress at all corners 62. Moreover, since the possibility that the lid body 6 is distorted can be reduced, the sealed state of the semiconductor package 1 can be improved.

  Further, when the lid body 6 is composed of a plurality of insulating layers, the cutout portion 63 is provided from the lower surface of the lid body 6, that is, the lower surface of the layer having the bonding region 61 to the side surface. Since a joining material such as a brazing material or solder is provided in the joining region 61, the flow of the joining material can be controlled by the notch portion 63 as the position where the notch portion 63 is provided is closer to the joining region 61. At the same time, it is possible to easily store the bonding material in the cutout portion 63, and it is possible to prevent the bonding material from being accumulated in the corner portion 62.

Further, the outer edge of the corner portion 62 on the upper surface of the lid 6 may be larger than the outer edge of the corner portion 62 on the lower surface. Since the lower surface of the lid body 6 is joined to the frame body 3, if the corner portion 62 of the lower surface of the lid body 6 is larger than the outer edge of the corner portion 62 of the upper surface of the lid body 6, thermal expansion and heat of the semiconductor package 1 are generated. The distance from the central portion of the semiconductor package 1 that is the center of contraction becomes long, and the thermal stress generated in the corner portion 62 of the lower surface of the lid body 6 increases, so that the corner portion 62 of the lower surface of the lid body 6 becomes the frame body 3. It becomes a starting point of peeling of the joint between the lid 6 and the lid 6. For this reason, it is preferable that the corner portion 62 of the lower surface of the lid body 6 is equal to or slightly smaller than the outer edge of the corner portion 62 of the upper surface of the lid body 6.

<Semiconductor package manufacturing method>
Below, the manufacturing method of the semiconductor package 1 which concerns on one Embodiment of this invention is demonstrated.

  If the substrate 2 is made of, for example, an aluminum oxide sintered body, it is produced as follows. First, a ceramic green sheet is formed into a sheet with a raw material powder such as aluminum oxide and silicon oxide, an appropriate organic binder and an organic solvent into a sheet shape. Next, a laminated body made of ceramic green sheets is produced by laminating a plurality of ceramic green sheets. Note that the laminated body does not necessarily have to be formed by laminating a plurality of ceramic green sheets, and may have only one layer as long as there is no problem in terms of mechanical strength of the substrate 2. The first electrode portion 1a and the second electrode portion 1b include, for example, tungsten, and a predetermined amount of metal paste prepared by mixing tungsten powder, an organic solvent, and an organic binder on the upper surface of the laminate. It is provided by printing the pattern shape by a method such as a screen printing method. Furthermore, when the electrical wiring that electrically connects the first electrode portion 2a and the second electrode portion 2b is a through conductor, the through conductor is a through hole that penetrates the ceramic green sheet that will be the substrate 2 in the thickness direction in advance. Is provided, and a metal paste made of the same metal material as that described above is filled in the through hole and molded. Then, the ceramic green sheet and the metal paste are co-fired at a temperature of 1300 to 1600° C., whereby the substrate 2 is manufactured.

  If the frame body 3 is made of, for example, an aluminum oxide sintered body, the frame body 3 is manufactured in the same manner as the base body 2. First, the ceramic green sheet is formed into a rectangular sheet by molding raw material powder such as aluminum oxide and silicon oxide together with an appropriate organic binder and organic solvent into a sheet. Next, a laminated body made of ceramic green sheets is produced by laminating a plurality of ceramic green sheets. Then, the laminated body is formed into a frame shape by providing a through hole in the central portion by a punching method. Furthermore, the laminated body is provided by printing a metal paste, which is a first metal layer, made by mixing tungsten powder, an organic solvent, and an organic binder on the upper surface by a method such as a screen printing method. After that, the laminated body becomes the frame body 3 by firing at a temperature of 1300 to 1600°C. The frame body 3 does not necessarily have to be formed by laminating a plurality of ceramic green sheets, and may have only one layer as long as there is no problem in terms of mechanical strength as the frame body 3. Then, the frame body 3 is bonded to the upper surface of the substrate 2 by a bonding material such as a glass bonding material or a resin bonding material. When the frame body 3 is made of the same aluminum oxide sintered body as the base body 2, a frame-shaped ceramic green sheet is laminated on the upper surface of the ceramic green sheet serving as the substrate 2, and these ceramic green sheets are It may be formed integrally with the substrate 2 by a method of simultaneous firing.

  If the lid body 6 is made of, for example, an aluminum oxide sintered body, the lid body 6 is manufactured in the same manner as the base body 2 and the frame body 3. First, the upper and lower ceramic green sheets are formed into a rectangular sheet by molding the raw material powder such as aluminum oxide and silicon oxide, an appropriate organic binder and an organic solvent into a sheet. The rectangular green sheet-like ceramic green sheet, which is the lower layer, is provided with the notch 63 at a position closer to the corner than the midpoint of each side in plan view. Further, the notch portion 63 is provided on the surface thereof with a metal paste to be the metallized layer 64, which is produced by mixing tungsten powder with an organic solvent and an organic binder. Next, the upper and lower ceramic green sheets are laminated to form a laminate. Then, the laminated body is fired at a temperature of 1300 to 1600° C., whereby the lid body 6 having the notch portion 63 and the metallized layer 64 is manufactured.

  Since the lid body 6 is provided with the cutout portion 63, it is possible to make it difficult for the joining material used when joining the lid body 6 to the corner portion 62 of the lid body 6. Further, it is possible to make it easier for the bonding material to flow into the cutout portion 63. Specifically, a bonding material is prepared on the upper surface of the frame body 3, and the aligned lid body 6 is placed on the bonding material. By mounting the lid body 6, the bonding material is pushed by the lid body 6 and thus spreads uniformly over the entire bonding region 61. When the notch 63 is not provided when the joining material spreads uniformly, the joining material spreads from the two sides of the lid 6 to each corner 62, so that the joining material is It becomes easy to accumulate. In the case of the lid 6 of the semiconductor package 1 according to the embodiment of the present invention, the bonding material on each side flows to the notch 63 provided near the corner 62 as it spreads to the corner 62. Come on. Further, even if the corner portion 62 has an excessive bonding material, it is possible to spread the cutout portion 63 from the corner portion 62 toward the cutout portion 63.

<Structure of semiconductor device>
1 and 8 are perspective views of a semiconductor device 10 according to an embodiment of the present invention. 1 and 8, a semiconductor device 10 includes a semiconductor element 5 in addition to the semiconductor package 1 according to the embodiment of the present invention.

  The semiconductor device 10 according to the embodiment of the present invention is completed by mounting the semiconductor element 5 in the mounting region of the semiconductor package 1 and electrically connecting it to the first electrode portion of the semiconductor package 1. The semiconductor element 5 is mounted on a metal portion provided in the mounting region via a bonding material such as a low melting point brazing material made of Au-Sn and a lead-free solder made of Sn-silver (Ag)-copper (Cu). It After that, the electrode of the semiconductor element 5 and the first electrode portion 1a are electrically connected via a bonding wire or the like.

  Then, the semiconductor element 5 and the electric circuit of the external mounting board may be connected by electrically connecting the second electrode portion 1b to the electric circuit of the external mounting board. By connecting in this way, an electric signal is input and output between the electric circuit of the external mounting substrate and the semiconductor element 5. Examples of the semiconductor element 5 include IC and LSI, as well as the semiconductor element 5 for power devices.

  Further, in the semiconductor device 10, with the semiconductor element 5 mounted in the mounting region, the lid 6 is bonded and fixed to the upper surface of the frame 3 to seal the semiconductor element 5. At this time, the upper surface of the frame body 3 and the bonding area 61 of the lid body 6 are bonded by a bonding material. This joining material is, for example, a low melting point brazing material made of Au-Sn, a lead-free solder made of Sn-Ag-Cu, or the like.

  Since the lid body 6 is provided with the cutout portion 63, it is possible to make it difficult for the joining material used when joining the frame body 3 to the corner portion 62 of the lid body 6. Further, it is possible to make it easier for the bonding material to flow into the cutout portion 63. In other words, the presence of the notch portion 63 can reduce the amount of the bonding material accumulated in the corner portion 62 of the lid body 6 at the time of sealing. Therefore, the stress generated in the corner portion 62 due to the difference in thermal expansion coefficient between the bonding material and the lid 6 can be reduced.

  With the configuration as described above, the semiconductor device 10 according to the embodiment of the present invention can maintain a good sealed state. It is possible to suppress the occurrence of cracks at the corners 62 of the lid body 6.

The present invention is not limited to the above-described embodiments and examples, and various modifications can be made without departing from the scope of the present invention.

1 Semiconductor Package 2 Substrate 3 Frame 5 Semiconductor Element 6 Lid 61 Bonding Region 62 Corner 63 Cutout 64 Metallized Layer 10 Semiconductor Device

Claims (7)

A rectangular substrate,
While surrounding the upper surface of the substrate, a frame body having a rectangular outer edge and inner edge in a plan view,
It has a rectangular shape in a plan view, and has a joint region on the lower surface that is joined to the upper surface of the frame body, and has a cutout portion whose side surface is cut out at a position closer to a corner than the midpoint of each side in a plan view. And a lid having
A semiconductor package having a metallization layer on a surface of the joint region of the lid and the notch.   The semiconductor package according to claim 1, wherein the corner portion of the lid body is chamfered.   The semiconductor package according to claim 1, wherein the cutout portion is provided on a side surface of the lid body that is located on the opposite side of the lid body.   The semiconductor package according to any one of claims 1 to 3, wherein the cutout portion is provided on all sides of the lid body.   The semiconductor package according to claim 1, wherein the cutout portion is provided on two adjacent sides of the lid body with the corner portion sandwiched therebetween. The lid is composed of a plurality of insulating layers,
The semiconductor package according to claim 1, wherein the lid body has the cutout portion on a side surface of a layer having the bonding region on a lower surface thereof. A semiconductor package according to any one of claims 1 to 6,
A semiconductor device mounted on the upper surface of the substrate.

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