JP2018056355A - Semiconductor package and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor package and a semiconductor device which can maintain an excellent sealed state.SOLUTION: The invention according to an embodiment includes a substrate 2, a frame body 3, and a lid body 6. The substrate 2 has a rectangular shape in a plan view. The frame body 3 surrounds the upper surface of the substrate 2 and has a rectangular outer edge and a rectangular inner edge in a plan view. The lid body 6 is rectangular in a plan view, and has a joint region 61 at a lower surface, which is joined to the upper surface of the frame body 3. The lid body also has a notch 63 in a side surface in a position closer to an angle part 62 than to the midpoint of each side in a plan view. The surface of the joint region 61 and the notch 63 of the lid body 6 has a metallized layer 64.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a semiconductor package for housing a semiconductor element and a semiconductor device using the same.

In recent years, semiconductor packages and semiconductor devices that house semiconductor elements such as ICs (Integrated Circuits), LSIs (Large-Scale Integrations), and power devices have been required to be hermetic when sealed (see Patent Document 1). ).

JP 2013-16658 A

  In the semiconductor package, the technique disclosed in Patent Document 1 includes a substrate, a frame body having a through hole provided so as to surround the upper surface of the substrate, an input / output terminal provided in the through hole, and an upper end of the frame body. And a lid joined to each other. The lid is chamfered at the corners, so that the brazing material can be collected at a location that is likely to be a starting point for peeling off the joint with the frame. However, in this configuration, since the brazing material is accumulated in the corner portion, a stress load may occur in the corner portion due to differences in thermal expansion coefficients among the lid body, the frame body, and the brazing material. For this reason, it may be difficult to seal hermetically.

  A semiconductor package according to an embodiment of the present invention surrounds a rectangular substrate, an upper surface of the substrate, a frame body having a rectangular outer edge and inner edge in a plan view, and a rectangular shape in a plan view, on a lower surface. And a lid having a notch portion with a side face notched at a position closer to the corner than the midpoint of each side in plan view, having a joining region joined to the upper surface of the frame body, A metallized layer is provided on the bonding region of the lid and the surface of the notch.

  A semiconductor device according to an embodiment of the present invention includes the semiconductor package described above and a semiconductor element mounted on the upper surface of the substrate.

  Since the semiconductor package according to the embodiment of the present invention has the above-described configuration, the sealed state of the semiconductor package can be favorably maintained. In addition, since the semiconductor device according to the embodiment of the present invention includes the semiconductor package as described above, the semiconductor device can be used in a state where the sealed state of the semiconductor package is favorably maintained.

1 is a perspective view showing a semiconductor device according to an embodiment of the present invention. It is a bottom view which shows the cover body of the semiconductor package which concerns on one Embodiment of this invention. It is a top view which shows the cover body of the semiconductor package which concerns on one Embodiment of this invention. FIG. 4A is a perspective view showing a lid of a semiconductor package according to an embodiment of the present invention, FIG. 4A is a perspective view showing a bottom surface of the lid, and FIG. 4B is a top view of the lid. It is a perspective view. FIG. 5A is an enlarged view of a corner portion of the lid of the semiconductor package according to the embodiment of the present invention, and FIG. 5A is an enlarged view of the corner of the lid of the semiconductor package according to the embodiment of the present invention; FIG. 5B is an enlarged view of a corner portion of a lid of a semiconductor package according to another embodiment of the present invention. It is an enlarged view of the corner | angular part of the cover body of the semiconductor package which concerns on other embodiment of this invention. FIG. 7A is a perspective view showing a semiconductor package (without a lid) according to one embodiment of the present invention, and FIG. 7A is a top perspective view of the semiconductor package according to one embodiment of the present invention, and FIG. FIG. 4 is a bottom perspective view of a semiconductor package according to an embodiment of the present invention. It is a perspective view showing a semiconductor device concerning one embodiment of the present invention.

  Hereinafter, a semiconductor package and a semiconductor device according to embodiments of the present invention will be described with reference to the drawings.

<Structure of semiconductor package>
1 is a perspective view of a semiconductor device 10 according to an embodiment of the present invention, FIG. 2 is a bottom view of a lid 6 of a semiconductor package 1 according to an embodiment of the present invention, and FIG. 3 is an embodiment of the present invention. 4 is a top view of the lid body 6 of the semiconductor package 1 according to the embodiment, and FIG. 4 is a perspective view of the lid body 6 of the semiconductor package 1 according to the embodiment of the present invention. 5 is an enlarged view of a corner portion of the lid of the semiconductor package according to the embodiment of the present invention, and FIG. 6 is an enlarged view of a corner portion of the lid of the semiconductor package according to another embodiment of the present invention. FIG. 7 is a perspective view showing a semiconductor package (without a lid) according to an embodiment of the present invention. 4A is a perspective view showing the lower surface of the lid, and FIG. 4B is a perspective view showing the upper surface of the lid. 5A is an enlarged view of a corner portion of the lid of the semiconductor package according to one embodiment of the present invention, and FIG. 5B is a lid of the semiconductor package according to another embodiment of the present invention. It is an enlarged view of the corner | angular part. 7A is a top perspective view of the semiconductor package according to the embodiment of the present invention, and FIG. 7B is a bottom perspective view of the semiconductor package according to the embodiment of the present invention. In these drawings, the semiconductor package 1 includes a substrate 2, a frame body 3, and a lid body 6.

  The substrate 2 is a plate-like member having a rectangular shape when seen in a plan view, and has a mounting region for mounting the semiconductor element 5 at the center of the upper surface. Further, as shown in FIG. 7, the substrate 2 is provided with a first electrode portion 2 a that is electrically connected to the semiconductor element 5 at a position close to the mounting region on the upper surface. A second electrode portion 2b electrically connected to the first electrode portion 2a via an electric wiring provided in the substrate 2 is provided on the lower surface of the substrate 2, and the semiconductor element 5 and the second electrode portion 2b is electrically connected. The mounting area is an area surrounded by the rectangular frame 3 when the substrate 2 is viewed in plan, and means an area where the semiconductor element 5 is mounted.

  The substrate 2 is an insulating material such as an aluminum oxide sintered body, a mullite sintered body, a silicon carbide sintered body, an aluminum nitride sintered body, a silicon nitride sintered body, or a glass ceramic. Made of ceramic material. The size of the substrate 2 is, for example, 5 mm × 50 mm to 5 mm × 50 mm in a plan view, and the thickness is 0.3 mm to 3 mm. The substrate 2 may have a structure that efficiently dissipates heat generated from the semiconductor element 5 to the outside of the semiconductor package 1. In other words, the substrate 2 penetrates the upper and lower surfaces of the substrate 2 in the mounting region, for example, a metal material such as iron, copper, nickel, chromium, cobalt, or tungsten, or an alloy or composite made of the above metal material. A material may be incorporated and bonded and fixed. Thereby, the semiconductor package 1 can improve the heat dissipation of the substrate 2.

The frame 3 is located on the upper surface of the substrate 2. The frame 3 is a member for securing a space for housing the semiconductor element 5. The frame 3 is provided so as to surround the mounting area. Frame 3 is
The shape of the inner edge and the outer edge when viewed from above is a rectangular frame shape. Each side of the rectangular frame-shaped frame 3 is provided so as to be parallel to each side of the substrate 2. The frame body 3 may be provided with a first metal layer on an upper surface that is a surface facing the lid body 5. Further, when the frame 3 is provided integrally on the upper surface of the substrate 2, the frame 3 made of a ceramic material may be provided by being fired simultaneously with the substrate 2. When the frame 3 is provided as a separate member on the upper surface of the substrate 2, a second metal layer is provided on the upper surface of the substrate 2 made of a ceramic material, and the second metal layer is formed on the lower surface of the frame 3 made of the ceramic material. Three metal layers are provided, and the third metal layer is bonded to the second metal layer provided on the upper surface of the substrate 2 through a bonding material such as a low melting point brazing material made of gold (Au) -tin (Sn). May be provided.

  When the frame body 3 is made of a metal material, the frame body 3 may have a through hole formed so as to be in contact with the substrate 2 in the inner and outer directions of at least one surface of the rectangle. And it has the through-hole provided from the frame 3 lower surface to the upper surface. The input / output terminal is inserted into the through hole, and the input / output terminal passes through a metal layer of the input / output terminal provided on the surface in contact with the through hole and a bonding material such as a low melting point brazing material made of Au—Sn. It may be joined and fixed to the hole.

  The frame 3 is an insulating material, for example, an aluminum oxide sintered body, a mullite sintered body, a silicon carbide sintered body, an aluminum nitride sintered body, a silicon nitride sintered body, or a glass ceramic. A ceramic material such as can be used. Moreover, as the frame 3, for example, a metal material such as iron, copper, nickel, chromium, cobalt, or tungsten can be used. Alternatively, an alloy made of these metals can be used. The size of the frame 3 is, for example, 5 mm × 50 mm to 5 mm × 50 mm in a plan view, and the thickness is 0.5 mm to 2 mm. Moreover, the height of the frame 3 is 1 mm-10 mm, for example.

  The lid 6 is joined to the upper surface of the frame 3 by a joining material such as a brazing material or solder so as to close the inside of the frame 3. The lid body 6 has a rectangular shape in plan view, and has a joining region 61 joined to the upper surface of the frame body 3 serving as a surface facing the lid body 6 on the lower surface serving as the surface facing the frame body 3. Yes. Further, the lid body 6 has a notch portion 63 that is notched from the lower surface to the side surface of the lid body 6 at a position closer to the corner portion 62 of the lid body 6 than the midpoint of each side of the lid body 6 in plan view. doing. Furthermore, a metallized layer 64 is provided on the surface of the joining region 61 and the notch 63 of the lid 6.

  The lid body 6 is, for example, the same size as the outer edge of the frame body 3 in a plan view and has a thickness of 0.5 mm to 5 mm. The lid 6 is made of an insulating material, for example. For example, a ceramic material such as an aluminum oxide sintered body, a mullite sintered body, a silicon carbide sintered body, an aluminum nitride sintered body, a silicon nitride sintered body, or a glass ceramic can be used. When the lid 6 is made of an insulating material, the lid 6 may be made of a single-layer insulating material or may be formed by laminating a plurality of insulating layers.

  In the case where the lid 6 is made of an insulating layer, it is made of, for example, two layers. As shown in FIG. 5 (a), the upper corner portion 62a and the lower corner portion 62b may have the same shape. Moreover, a different shape may be sufficient. As will be described later, even when the corner 62 is chamfered, only the corner 62b may be chamfered, or both the corner 62a and the corner 62b may be chamfered.

  The joining region 61 is provided on the lower surface of the lid body 6. The bonding region 61 is a region where a metallized layer 64 described later is formed. The joining area | region 61 is frame shape, for example, Comprising: It joins with the frame 3 via a joining material etc. The width of the joining region 61 is, for example, 0.2 mm to 5 mm.

The notch 63 is provided from the lower surface of the lid body 6 to the side surface. In particular, the cover 6 may be cut out from the lower surface to the outer side surface. At this time, the notch portion 63 is provided from the lower surface serving as the bonding surface to the frame body 3 to the outer side surface, so that a bonding material such as a brazing material or solder for bonding the lid body 6 to the frame body 3 is a semiconductor. It can suppress flowing into the inside of the frame 3 in which the element 5 is mounted.

  Moreover, the notch part 63 may be notched by the depth of about 10%-50% with respect to the width | variety of the joining area | region 61 in planar view. If it is about 10% to 50%, the manufacturing process and the environmental test of the semiconductor package 1 and the thermal stress and residual stress generated when the semiconductor device 10 is operated while maintaining the bonding area between the lid 6 and the frame 3. It is possible to make it difficult for the bonding material to accumulate in the concentrated corners 62. Further, the notch 63 is cut out with a length of about 10% to 40% with respect to the length of one side in the length direction of one side of the lid body 6, and the depth in the thickness direction of the lid body 6. The thickness is notched at a depth of about 20% to 70% with respect to the thickness of the lid body 6.

  Further, the metallized layer 64 provided on the surface of the bonding region 61 and the notch 63 of the lid 6 is provided with, for example, tungsten, molybdenum or manganese in the lower layer, and improves the bondability and wettability to the bonding material in the upper layer. Therefore, nickel plating or gold plating is provided. By providing the metallized layer 64 in the joining region 61 and the notch 63, the joining property between the frame body 3 and the lid body 6 through the joining material such as solder is improved and the direction in which the joining material flows. It becomes easy to control.

  As shown in FIG. 6, the metallized layer 64 may be provided on the surface of the corner 62. In particular, it may be provided in both the corner 62a and the corner 62b, or only one of them may be provided. Since the metallized layer 64 is also formed at the corner 62, the area to which the bonding material is bonded increases, so that the bonding property between the lid 6 and the frame 3 is improved.

  The semiconductor package 1 has a notch 63 at a position near the corner 62 of the lid 6 and a metallized layer 64 on the surface thereof, so that a joining material such as a brazing material or solder can easily flow through the notch 63. Therefore, it is possible to prevent the bonding material from being accumulated in the corner portion 62. That is, the thermal stress generated in the corner 62 due to the difference in thermal expansion coefficients among the frame body 3, the lid body 6, and the bonding material can be reduced.

  The corner 62 has a long distance from the central portion of the semiconductor package 1 that is the center of thermal expansion and contraction of the semiconductor package 1, and the lid 6 is most likely to be loaded by thermal stress. For this reason, by reducing the load due to the thermal stress applied to the corner 62, it becomes easy to maintain the bonding between the lid body 6 and the frame body 3, and cracks generated in the lid body 6 and the bonding material can be suppressed. . Further, since the notch 63 is located near the corner 62, the corner 62 may be a starting point of the lid 6 peeling off, and further, the lid 6 and the bonding material located at the corner 62 may be cracked. It is possible to suppress the possibility of the occurrence of. In other words, the lid body 6 is provided with the bonding material in the notch portion 63 at a position close to the corner portion 62, thereby reducing the thermal stress caused by the difference in thermal expansion coefficient between the lid body 3, the lid body 6 and the bonding material. The bonding strength between the frame body 3 and the lid body 6 can be maintained appropriately.

  The semiconductor package 1 according to an embodiment of the present invention described above can maintain the sealed state of the semiconductor package 1 satisfactorily by being configured as described above. That is, when the lid 6 is joined, the joining material on each side flows into the notch 63 provided near the corner 62 as it expands toward the corner 62. Further, even if there is an excessive bonding material at the corner 62, the notch 63 can be expanded from the corner 62 toward the notch 63. Furthermore, in the corner | angular part 62, the stress which arises between the cover body 6, the frame 3, and a joining material can be reduced.

Moreover, as shown in FIG.5 (b), the corner | angular part 62 of the cover body 6 may be chamfered. At this time, the chamfer is formed not in the thickness direction of the lid body 6 but in the width direction of the lid body 6. Specifically, the chamfering of the lid 6 may be chamfered linearly or may be chamfered curvedly. In the case where the corner 62 is curved, the curve may be drawn on either of the irregularities. Since the corner portion 62 is chamfered in this way, it is possible to prevent the corner portion 62 that is most likely to be subjected to a load due to thermal stress from cracking and the lid body 6 from being peeled off from the frame body 3. That is, in the semiconductor package 1, the sealing state can be improved.

  Moreover, the cover body 6 may have the notch part 63 in the side surface located in an other side. That is, one set of corner portions 62 of the lid body 6 is provided at a position on the diagonal line of the lid body 6. As a result, it is possible to make the load of the thermal stress generated in the corner portion 62 of the lid body 6 even in the lid body 6. This is because it is possible to make it difficult to collect the bonding material symmetrically at the corner portion 62, and thus the load applied to the lid body 6 is symmetrical.

  Further, the lid body 6 may have cutout portions 63 on all sides. Since the notches 63 are provided at both ends of all the corners 62, it is possible to suppress the joining material such as brazing material and solder from being accumulated in all the corners 62. The thermal stress can be reduced most, and the thermal stress generated in the corner portion 62 of the lid body 6 can be made uniform in the lid body 6. This is because it is possible to make it difficult to collect the bonding material for all the corner portions 62. As a result, it can suppress that the crack by stress arises in all the corner | angular parts 62. FIG. Moreover, since the possibility that the lid 6 is distorted can be reduced, the sealing state of the semiconductor package 1 can be improved.

  At this time, the notch 63 may be provided with the corner 62 sandwiched between two adjacent sides of the lid 6. In this case, the stress applied to one corner 62 can be relaxed symmetrically. At this time, you may have the notch part 63 in the both ends of all the corner | angular parts 62. FIG. That is, the lid body 6 may be provided with the notches 63 across the corners 62 on all sides. In this case, since it is difficult for the bonding material to accumulate in the corner 62, the stress generated in the corner 62 can be more effectively reduced. As a result, the occurrence of cracks due to stress at the corner 62 can be suppressed. Moreover, since the possibility that the lid 6 is distorted can be reduced, the sealing state of the semiconductor package 1 can be improved.

  In addition, when the notch 63 is provided on all sides with the corner 62 sandwiched between two adjacent sides of the lid body 6, the notch 63 is provided symmetrically on one side. It is good to be. In this case, the accumulation of the bonding material at the corner 62 on one side of the lid 6 can be reduced to the same extent. For this reason, the stress which arises in the cover body 6 can be made symmetrical. That is, when there is a notch 63 having the same distance and the same size from the center of one side, the stress load on the lid 6 is more effectively reduced. As a result, it can suppress that a crack arises in the corner | angular part 62. FIG. As a result, it can suppress that the crack by stress arises in all the corner | angular parts 62. FIG. Moreover, since the possibility that the lid 6 is distorted can be reduced, the sealing state of the semiconductor package 1 can be improved.

  Further, when the lid 6 is composed of a plurality of insulating layers, the notch 63 is provided from the lowermost layer of the lid 6, that is, from the lower surface to the side surface of the layer having the bonding region 61. Since a joining material such as brazing material or solder is provided in the joining region 61, the flow of the joining material can be controlled by the notch 63 as the position where the notch 63 is provided is closer to the joining region 61. In addition, it is possible to make it easy to collect the bonding material in the notch portion 63, and to prevent the bonding material from collecting in the corner portion 62.

Further, the outer edge of the corner 62 on the upper surface of the lid 6 may be larger than the outer edge of the corner 62 on the lower surface. Since the lower surface of the lid body 6 is joined to the frame body 3, if the corner portion 62 on the lower surface of the lid body 6 is larger than the outer edge of the corner portion 62 on the upper surface of the lid body 6, thermal expansion and heat Since the distance from the central portion of the semiconductor package 1 that becomes the center of shrinkage becomes longer and the thermal stress generated in the corner portion 62 on the lower surface of the lid body 6 increases, the corner portion 62 on the lower surface of the lid body 6 forms the frame body 3. It becomes a starting point of peeling of joining between the lid 6 and the lid 6. For this reason, the corner 62 on the lower surface of the lid 6 should be the same as or slightly smaller than the outer edge of the corner 62 on the upper surface of the lid 6.

<Semiconductor package manufacturing method>
Below, the manufacturing method of the semiconductor package 1 which concerns on one Embodiment of this invention is demonstrated.

  If the substrate 2 is made of, for example, an aluminum oxide sintered body, it is manufactured as follows. First, a ceramic green sheet is formed into a sheet shape together with raw material powders such as aluminum oxide and silicon oxide, an appropriate organic binder, and an organic solvent, and is formed into a rectangular sheet shape. Next, a laminated body made of ceramic green sheets is produced by laminating a plurality of ceramic green sheets. The laminated body does not necessarily have to be laminated with a plurality of ceramic green sheets, and only one layer may be used as long as there is no problem in terms of mechanical strength as the substrate 2. The first electrode portion 1a and the second electrode portion 1b include, for example, tungsten, and a metal paste produced by mixing tungsten powder, an organic solvent, and an organic binder is formed on the upper surface of the laminate. It is provided by printing the pattern shape by a method such as screen printing. Furthermore, when the electrical wiring that electrically connects the first electrode portion 2a and the second electrode portion 2b is a through conductor, the through conductor is a through hole that penetrates the ceramic green sheet to be the substrate 2 in the thickness direction in advance. And a metal paste made of the same metal material as described above is filled in the through hole and molded. Thereafter, the ceramic green sheet and the metal paste are simultaneously fired at a temperature of 1300 to 1600 ° C., whereby the substrate 2 is manufactured.

  If the frame 3 is made of, for example, an aluminum oxide sintered body, the frame 3 is produced in the same manner as the base 2 described above. First, the ceramic green sheet is formed into a rectangular sheet by forming raw powders such as aluminum oxide and silicon oxide into a sheet together with an appropriate organic binder and organic solvent. Next, a laminated body made of ceramic green sheets is produced by laminating a plurality of ceramic green sheets. And a laminated body is shape | molded in frame shape by providing a through-hole in a center part by the punching method. Further, the laminate is provided on the upper surface by printing a metal paste, which is prepared by mixing tungsten powder, an organic solvent, and an organic binder, and becomes a first metal layer by a method such as a screen printing method. Thereafter, the laminated body is fired at a temperature of 1300 to 1600 ° C. to become the frame body 3. The frame body 3 is not necessarily formed by laminating a plurality of ceramic green sheets, and only one layer may be used as long as there is no problem in terms of mechanical strength as the frame body 3. The frame 3 is bonded to the upper surface of the substrate 2 with a bonding material such as a glass bonding material or a resin bonding material. When the frame 3 is made of an aluminum oxide sintered body similar to the base 2, a frame-shaped ceramic green sheet is laminated on the upper surface of the ceramic green sheet serving as the substrate 2. It may be formed integrally with the substrate 2 by a co-firing method.

  For example, if the lid 6 is made of an aluminum oxide sintered body, the lid 6 is produced in the same manner as the base 2 and the frame 3 described above. First, the ceramic green sheets as the upper layer and the lower layer are formed into a sheet shape together with raw material powders such as aluminum oxide and silicon oxide, an appropriate organic binder, and an organic solvent, and are formed into a rectangular sheet shape. The rectangular green ceramic sheet in the lower layer is provided with a notch 63 at a position closer to the corner than the midpoint of each side in plan view. Further, the notch 63 is provided with a metal paste on the surface, which is prepared by mixing tungsten powder, an organic solvent, and an organic binder to form the metallized layer 64. Next, the ceramic green sheets as the upper layer and the lower layer are laminated to produce a laminate. Then, the laminated body is fired at a temperature of 1300 to 1600 ° C., whereby the lid body 6 having the notch 63 and the metallized layer 64 is produced.

  Since the cover 6 is provided with the notch 63, it is possible to make it difficult to fasten the joining material used when joining the frame 3 to the corner 62 of the lid 6. In addition, the bonding material can easily flow into the notch 63. Specifically, a bonding material is prepared on the upper surface of the frame 3, and the aligned lid 6 is placed thereon. By placing the lid body 6, the bonding material is pushed by the lid body 6, so that the bonding material spreads uniformly over the entire bonding area 61. When the bonding material spreads uniformly, if the notch portion 63 is not provided, the bonding material spreads from the two sides of the lid body 6 to each corner 62. It becomes easy to collect. In the case of the lid body 6 of the semiconductor package 1 according to the embodiment of the present invention, the bonding material on each side flows into the notch portion 63 provided near the corner portion 62 when expanding to the corner portion 62. Come on. Further, even if there is an excessive bonding material at the corner 62, the notch 63 can be expanded from the corner 62 toward the notch 63.

<Configuration of semiconductor device>
1 and 8 are perspective views of a semiconductor device 10 according to an embodiment of the present invention. 1 and 8, a semiconductor device 10 includes a semiconductor element 5 in addition to the semiconductor package 1 according to an embodiment of the present invention.

  The semiconductor device 10 according to an embodiment of the present invention is completed by mounting the semiconductor element 5 in the mounting region of the semiconductor package 1 described above and electrically connecting to the first electrode portion of the semiconductor package 1. The semiconductor element 5 is mounted on a metal part provided in the mounting region via a bonding material such as a low melting point brazing material made of Au-Sn or lead-free solder made of Sn-silver (Ag) -copper (Cu). The Thereafter, the electrode of the semiconductor element 5 and the first electrode portion 1a are electrically connected via a bonding wire or the like.

  Then, by electrically connecting the second electrode portion 1b to the electric circuit of the external mounting substrate, the semiconductor element 5 and the electric circuit of the external mounting substrate may be connected. By connecting in this way, an electric signal is inputted and outputted between the electric circuit of the external mounting substrate and the semiconductor element 5. Examples of the semiconductor element 5 include a power semiconductor device 5 in addition to an IC and an LSI.

  In the semiconductor device 10, the semiconductor element 5 is sealed by bonding and fixing the lid body 6 to the upper surface of the frame 3 with the semiconductor element 5 mounted in the mounting region. At this time, the upper surface of the frame 3 and the joining region 61 of the lid 6 are joined by the joining material. This joining material is, for example, a joining material such as a low melting point brazing material made of Au—Sn or lead-free solder made of Sn—Ag—Cu.

  Since the cover 6 is provided with the notch 63, it is possible to make it difficult to fasten the joining material used when joining the frame 3 to the corner 62 of the lid 6. In addition, the bonding material can easily flow into the notch 63. That is, the presence of the notch 63 can reduce the amount of bonding material that accumulates at the corner 62 of the lid 6 when sealing. For this reason, the stress which arises in the corner | angular part 62 by the thermal expansion coefficient difference of a joining material and the cover body 6 can be reduced.

  The semiconductor device 10 according to an embodiment of the present invention has a configuration as described above, so that the sealed state can be favorably maintained. It is possible to suppress the occurrence of cracks in the corner 62 of the lid body 6.

The present invention is not limited to the above-described embodiments and examples, and various modifications can be made without departing from the scope of the present invention.

DESCRIPTION OF SYMBOLS 1 Semiconductor package 2 Board | substrate 3 Frame 5 Semiconductor element 6 Cover body 61 Junction area | region 62 Corner | angular part 63 Notch part 64 Metallized layer 10 Semiconductor device

Claims (7)

A rectangular substrate;
Surrounding the upper surface of the substrate, the outer edge and the inner edge in a plan view, a rectangular frame,
It has a rectangular shape in a plan view, and has a joint region joined to the upper surface of the frame body on the lower surface, and a notch with a side surface notched at a position closer to the corner than the midpoint of each side in a plan view. And a lid having
A semiconductor package comprising a metallized layer on a surface of the bonding region of the lid and the notch.   The semiconductor package according to claim 1, wherein the corner of the lid is chamfered.   The semiconductor package according to claim 1, wherein the cutout portion is provided on a side surface located on the opposite side of the lid.   The semiconductor package according to claim 1, wherein the cutout portion is provided on all sides of the lid.   5. The semiconductor package according to claim 1, wherein the cutout portion is provided between two adjacent sides of the lid with the corner portion interposed therebetween. The lid is composed of a plurality of insulating layers,
The semiconductor package according to claim 1, wherein the lid has the notch on a side surface of a layer having the bonding region on a lower surface. A semiconductor package according to any one of claims 1 to 6;
A semiconductor device comprising: a semiconductor element mounted on an upper surface of the substrate.

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