JP2002134763A - Container for semiconductor light receiving element - Google Patents
Container for semiconductor light receiving elementInfo
- Publication number
- JP2002134763A JP2002134763A JP2000329619A JP2000329619A JP2002134763A JP 2002134763 A JP2002134763 A JP 2002134763A JP 2000329619 A JP2000329619 A JP 2000329619A JP 2000329619 A JP2000329619 A JP 2000329619A JP 2002134763 A JP2002134763 A JP 2002134763A
- Authority
- JP
- Japan
- Prior art keywords
- ceramic substrate
- resin frame
- receiving element
- semiconductor light
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 64
- 229920005989 resin Polymers 0.000 claims abstract description 73
- 239000011347 resin Substances 0.000 claims abstract description 73
- 239000000919 ceramic Substances 0.000 claims abstract description 65
- 239000000758 substrate Substances 0.000 claims abstract description 64
- 239000000853 adhesive Substances 0.000 claims abstract description 32
- 230000001070 adhesive effect Effects 0.000 claims abstract description 32
- 238000003860 storage Methods 0.000 claims description 2
- 239000000428 dust Substances 0.000 abstract description 30
- 238000004140 cleaning Methods 0.000 abstract description 15
- 238000000034 method Methods 0.000 abstract description 9
- 239000003822 epoxy resin Substances 0.000 description 11
- 229920000647 polyepoxide Polymers 0.000 description 11
- 239000003795 chemical substances by application Substances 0.000 description 7
- 238000007789 sealing Methods 0.000 description 6
- 238000005304 joining Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 4
- 229920001971 elastomer Polymers 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 230000007257 malfunction Effects 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229920000800 acrylic rubber Polymers 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229920000058 polyacrylate Polymers 0.000 description 2
- 238000004382 potting Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- JIGUQPWFLRLWPJ-UHFFFAOYSA-N Ethyl acrylate Chemical compound CCOC(=O)C=C JIGUQPWFLRLWPJ-UHFFFAOYSA-N 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- 229910017709 Ni Co Inorganic materials 0.000 description 1
- 229910003267 Ni-Co Inorganic materials 0.000 description 1
- 229910003262 Ni‐Co Inorganic materials 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009429 electrical wiring Methods 0.000 description 1
- UHESRSKEBRADOO-UHFFFAOYSA-N ethyl carbamate;prop-2-enoic acid Chemical compound OC(=O)C=C.CCOC(N)=O UHESRSKEBRADOO-UHFFFAOYSA-N 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000005555 metalworking Methods 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- AFEQENGXSMURHA-UHFFFAOYSA-N oxiran-2-ylmethanamine Chemical compound NCC1CO1 AFEQENGXSMURHA-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、ファクシミリやイ
メージスキャナ等に使用される、長尺のラインセンサ用
CCD等の半導体受光素子を搭載収納する中空部を有す
る半導体受光素子収納用容器に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a container for housing a semiconductor light receiving element having a hollow portion for mounting and receiving a semiconductor light receiving element such as a long CCD for a line sensor used for a facsimile or an image scanner.
【0002】[0002]
【従来の技術】従来、OA機器類のファクシミリやイメ
ージスキャナ等に使用されるラインセンサは、長尺のラ
インセンサ用CCD(Charge Coupled Device:電荷
結合素子)等の半導体受光素子を半導体受光素子収納用
容器(以下、半導体容器という)に搭載することによっ
て構成されている。このような半導体容器には、セラミ
ック基板の上面に形成された溝に半導体受光素子の搭載
部を有して成るセラミックパッケージが用いられてい
た。そして、その搭載部に半導体受光素子をダイボンド
し、ボンディングワイヤ等による電気的配線を行って、
溝の開口にガラスまたはプラスチックから成る透明窓を
封着することによって、ラインセンサとして使用されて
いた。2. Description of the Related Art Conventionally, a line sensor used for a facsimile or an image scanner of OA equipment includes a semiconductor light receiving element such as a long line sensor CCD (Charge Coupled Device). It is configured by being mounted on a container (hereinafter, referred to as a semiconductor container). In such a semiconductor container, a ceramic package having a semiconductor light receiving element mounting portion in a groove formed on an upper surface of a ceramic substrate has been used. Then, a semiconductor light receiving element is die-bonded to the mounting portion, and electrical wiring is performed by a bonding wire or the like.
It was used as a line sensor by sealing a transparent window made of glass or plastic at the opening of the groove.
【0003】また、種々の仕様やコスト低減の要求に応
えるべく、透明窓を封着する代わりに透光性封止樹脂に
よるポッティングを行うことや、セラミック基板に代え
て樹脂基板を用いたプラスチックパッケージを用いるこ
とが行われていた。Further, in order to meet various specifications and demands for cost reduction, potting with a light-transmitting sealing resin is performed instead of sealing a transparent window, or a plastic package using a resin substrate instead of a ceramic substrate. Was used.
【0004】最近では、複数のリードフレームを狭持し
た樹脂枠体とセラミック基板とを接着剤で接合すること
により、搭載面の寸法精度が高く、かつ熱放散性に優れ
る半導体容器が提案されている(特開平12−1383
05号公報参照)。Recently, a semiconductor container has been proposed in which a resin frame body holding a plurality of lead frames and a ceramic substrate are bonded with an adhesive, so that the mounting surface has high dimensional accuracy and excellent heat dissipation. (Japanese Unexamined Patent Application Publication No.
No. 05).
【0005】また、他の従来例として、容器本体とキャ
ップを接着するシール材が容器本体の中央部へ流れ込む
のを阻止するための溝が容器本体のシール部の内側に沿
って設けられている構成の半導体装置が提案されている
(特開平3−266453号公報参照)。Further, as another conventional example, a groove is provided along the inside of the seal portion of the container main body to prevent the sealing material for bonding the container main body and the cap from flowing into the central portion of the container main body. A semiconductor device having a configuration has been proposed (see Japanese Patent Application Laid-Open No. 3-266453).
【0006】[0006]
【発明が解決しようとする課題】しかしながら、図6の
ような特開平12−138305号公報の半導体容器で
は、セラミック基板11と樹脂枠体12を熱硬化性の接
着剤14で接合する際、接着剤14が硬化時に収縮し、
セラミック基板11と樹脂枠体12との間に隙間Cが発
生することがあり、その隙間Cにダストが挟まりやすく
なり、洗浄工程でもダストの除去が困難となっていた。
その結果、パッケージを封止した後にダストの一部が飛
散し、半導体受光素子の表面にダストが付着し半導体受
光素子が誤動作してしまう場合があった。However, in the semiconductor container disclosed in Japanese Patent Application Laid-Open No. 12-138305 as shown in FIG. 6, when the ceramic substrate 11 and the resin frame 12 are joined with the thermosetting adhesive 14, Agent 14 shrinks upon curing,
In some cases, a gap C is generated between the ceramic substrate 11 and the resin frame 12, and the dust is likely to be caught in the gap C, making it difficult to remove the dust even in the cleaning process.
As a result, a part of the dust may be scattered after the package is sealed, and the dust may adhere to the surface of the semiconductor light receiving element, causing the semiconductor light receiving element to malfunction.
【0007】また、材料コスト低減の目的から接着剤1
4の幅を小さくすると、セラミック基板11と樹脂枠体
12との間の隙間Cが図6の場合よりさらに大きくなる
こととなり、それによってダストがさらに挟まりやすく
なり、洗浄工程で挟まったダストをほとんど除去できな
くなっていた。その結果、半導体受光素子の表面にさら
にダストが付着し半導体受光素子が誤動作してしまう場
合があった。さらに、接着剤14の幅が小さいためセラ
ミック基板11と樹脂枠体12の間の接合強度が低下し
ていた。In order to reduce material costs, the adhesive 1
When the width of 4 is reduced, the gap C between the ceramic substrate 11 and the resin frame 12 becomes larger than in the case of FIG. 6, whereby the dust is more likely to be trapped. Could not be removed. As a result, dust may further adhere to the surface of the semiconductor light receiving element, and the semiconductor light receiving element may malfunction. Furthermore, since the width of the adhesive 14 is small, the bonding strength between the ceramic substrate 11 and the resin frame 12 has been reduced.
【0008】逆に接着剤14の幅を大きくすると、図7
に示すように接合時に接着剤14の搭載面11aへのは
み出しが起こり、半導体受光素子側へ流れ込んで、半導
体受光素子の側面に付着し、半導体受光素子自体の動作
特性に影響を与える場合があった。On the contrary, when the width of the adhesive 14 is increased, FIG.
As shown in (1), the adhesive 14 protrudes from the mounting surface 11a during the bonding, flows into the semiconductor light receiving element side, adheres to the side surface of the semiconductor light receiving element, and may affect the operation characteristics of the semiconductor light receiving element itself. Was.
【0009】一方、特開平3−266453号公報のよ
うに、シール部の内側の載置部に溝を設けると半導体受
光素子の搭載面が大きくなり、パッケージが大型重量化
されるという問題点を有していた。On the other hand, as described in Japanese Patent Application Laid-Open No. 3-266453, when a groove is provided in the mounting portion inside the seal portion, the mounting surface of the semiconductor light receiving element becomes large, and the package becomes large and heavy. Had.
【0010】従って、本発明は上記問題点に鑑み完成さ
れたもので、その目的は、樹脂枠体とセラミック基板と
の間に隙間が発生し、洗浄工程でダストがその隙間に残
り、ダストの一部が半導体受光素子に付着して誤動作を
起こすという問題点を解消し、また樹脂枠体とセラミッ
ク基板との接合時に接着剤の半導体受光素子の搭載面へ
のはみ出しを防止することである。[0010] Accordingly, the present invention has been completed in view of the above problems, and an object thereof is to form a gap between the resin frame and the ceramic substrate, and the dust remains in the gap in the cleaning step, and the dust is removed. An object of the present invention is to solve the problem that a part of the adhesive adheres to the semiconductor light receiving element to cause a malfunction, and to prevent the adhesive from protruding to the mounting surface of the semiconductor light receiving element at the time of joining the resin frame and the ceramic substrate.
【0011】[0011]
【課題を解決するための手段】本発明の半導体容器は、
セラミック基板と、該セラミック基板と略同じ外形寸法
を有するとともに複数のリードフレームを狭持した樹脂
枠体とを接着剤により接合して成り、前記セラミック基
板の上面の前記樹脂枠体に囲まれた領域に半導体受光素
子の搭載面を有する半導体受光素子収納用容器におい
て、前記上面の前記樹脂枠体の下方の部位に前記樹脂枠
体の内側面がその開口上に位置する溝が略全周にわたっ
て形成されており、かつ前記溝の内面の算術平均粗さR
aが0.05〜0.4μmであることを特徴とするもの
である。A semiconductor container according to the present invention comprises:
A ceramic substrate and a resin frame having substantially the same outer dimensions as the ceramic substrate and holding a plurality of lead frames are joined by an adhesive, and are surrounded by the resin frame on the upper surface of the ceramic substrate. In a semiconductor light-receiving element storage container having a mounting surface for a semiconductor light-receiving element in a region, a groove in which an inner side surface of the resin frame is located on an opening of the lower surface of the resin frame on the upper surface extends over substantially the entire circumference. And the arithmetic average roughness R of the inner surface of the groove
a is 0.05 to 0.4 μm.
【0012】本発明は、上記の構成により、セラミック
基板の上面に略全周にわたって溝が所定の場所に形成さ
れており、かつ溝の内面の算術平均粗さRaが0.05
〜0.4μmであることにより、樹脂枠体とセラミック
基板との隙間に残ったダストを洗浄工程で除去すること
が容易となり、半導体受光素子にダストが付着すること
がなくなり、半導体受光素子を正常に作動させることが
できる。さらに、樹脂枠体とセラミック基板との接合時
に接着剤の半導体受光素子の搭載面へのはみ出しを大幅
に減少し得る。また、セラミック基板の上面に溝を形成
しているため、表裏逆に接着剤を印刷塗布するといった
製造上の手違いも防止できる。According to the present invention, a groove is formed at a predetermined location over substantially the entire periphery of the upper surface of a ceramic substrate, and the arithmetic mean roughness Ra of the inner surface of the groove is 0.05.
When the thickness is about 0.4 μm, dust remaining in the gap between the resin frame and the ceramic substrate can be easily removed in the cleaning step, and the dust does not adhere to the semiconductor light receiving element, and the semiconductor light receiving element can be normally used. Can be activated. Further, the protrusion of the adhesive onto the mounting surface of the semiconductor light receiving element at the time of joining the resin frame and the ceramic substrate can be greatly reduced. Further, since the groove is formed on the upper surface of the ceramic substrate, it is possible to prevent a manufacturing error such as printing and applying an adhesive upside down.
【0013】また、本発明において好ましくは、前記樹
脂枠体の下面の途中から前記樹脂枠体の内側面にかけて
略全周にわたる切り欠き部が形成されていることを特徴
とする。In the present invention, preferably, a notch is formed over substantially the entire circumference from the middle of the lower surface of the resin frame to the inner surface of the resin frame.
【0014】上記の構成により、洗浄工程での溝内面に
残留したダストの除去がさらに容易となる。According to the above configuration, it is easier to remove dust remaining on the inner surface of the groove in the cleaning step.
【0015】また、本発明において好ましくは、前記溝
の深さが0.05mm〜0.5Y(但し、Yはセラミッ
ク基板の厚さ)であることを特徴とする。In the present invention, preferably, the depth of the groove is 0.05 mm to 0.5 Y (where Y is the thickness of the ceramic substrate).
【0016】上記の構成により、洗浄工程でのダスト除
去が容易になるとともに、セラミック基板の剛性を保持
してセラミック基板と樹脂枠体の接合時にセラミック基
板にクラック等が発生するのを防ぐことができる。According to the above configuration, dust can be easily removed in the cleaning step, and the rigidity of the ceramic substrate can be maintained to prevent cracks and the like from occurring in the ceramic substrate when the ceramic substrate and the resin frame are joined. it can.
【0017】[0017]
【発明の実施の形態】本発明の半導体容器について以下
に詳細に説明する。図1は本発明の半導体容器の実施の
形態の一例を示す断面図であり、図2はその斜視図であ
る。DESCRIPTION OF THE PREFERRED EMBODIMENTS The semiconductor container of the present invention will be described in detail below. FIG. 1 is a sectional view showing an example of an embodiment of a semiconductor container of the present invention, and FIG. 2 is a perspective view thereof.
【0018】図1および図2において、1はセラミック
基板、2はセラミック基板1と略同じ外形寸法を有する
樹脂枠体、3は樹脂枠体2に挟時された複数のリードフ
レーム、4はセラミック基板1と樹脂枠体2とを接合す
る熱硬化性の接着剤である。この半導体容器は、セラミ
ック基板1上にリードフレーム3と一体成形された樹脂
枠体2が接着剤4により接合される。1 and 2, 1 is a ceramic substrate, 2 is a resin frame having substantially the same outer dimensions as the ceramic substrate 1, 3 is a plurality of lead frames sandwiched between the resin frames 2, 4 is a ceramic frame. It is a thermosetting adhesive for joining the substrate 1 and the resin frame 2. In this semiconductor container, a resin frame 2 integrally formed with a lead frame 3 on a ceramic substrate 1 is joined by an adhesive 4.
【0019】本発明のセラミック基板1は板状体から成
り、その上面の樹脂枠体2に囲まれた領域に半導体受光
素子の搭載面1aを有している。The ceramic substrate 1 of the present invention is formed of a plate-like body, and has a mounting surface 1a of the semiconductor light receiving element in a region surrounded by the resin frame 2 on the upper surface thereof.
【0020】また、セラミック基板1の材料としては、
酸化アルミニウム(Al2O3)質焼結体,ムライト(3
Al2O3・2SiO2)質焼結体,窒化アルミニウム
(AlN)質焼結体,窒化珪素(Si3N4)質焼結体,
炭化珪素(SiC)質焼結体やガラスセラミックス等の
種々のセラミック材料を用いることができ、寸法精度、
強度、熱放散性等の要求特性に応じて適宜選択すればよ
い。中でも、酸化アルミニウム質焼結体を用いると、好
適な熱伝導率を有し、研磨等による加工が容易なことか
ら、所望の寸法精度の搭載面1aを有し、強度、信頼
性、熱放散性に優れた、良好な特性の半導体容器を得る
ことができる。The material of the ceramic substrate 1 is as follows.
Aluminum oxide (Al 2 O 3 ) sintered body, mullite (3
Al 2 O 3 .2SiO 2 ) sintered body, aluminum nitride (AlN) based sintered body, silicon nitride (Si 3 N 4 ) based sintered body,
Various ceramic materials such as silicon carbide (SiC) -based sintered bodies and glass ceramics can be used.
What is necessary is just to select suitably according to required characteristics, such as intensity | strength and heat dissipation. Among them, when an aluminum oxide sintered body is used, it has a suitable thermal conductivity and is easily processed by polishing or the like, so that it has a mounting surface 1a with desired dimensional accuracy, strength, reliability, and heat dissipation. A semiconductor container having excellent characteristics and excellent characteristics can be obtained.
【0021】溝5は、図1や図3に示すように、セラミ
ック基板1の上面の樹脂枠体2の下方の部位に樹脂枠体
2の内側面7がその開口上に位置して略全周にわたって
形成されている。溝5の大きさは、Aの位置(セラミッ
ク基板1の端面を0とした場合に溝5の外周側の内側面
の位置)とBの位置(セラミック基板1の端面を0とし
た場合に溝5の搭載面1a側の内側面の位置)と溝5の
深さによって決まる。樹脂枠体2の幅Xに対して、Aの
位置は0.5X〜(X−0.1mm)、Bの位置は(X
+0.1mm)〜1.5Xが好ましい。また、溝5の深
さは、セラミック基板1の厚さYに対して0.05mm
〜0.5Yが好ましい。As shown in FIGS. 1 and 3, the groove 5 is formed on the upper surface of the ceramic substrate 1 at a position below the resin frame 2 so that the inner side surface 7 of the resin frame 2 is positioned over the opening thereof and is substantially entirely formed. It is formed over the circumference. The size of the groove 5 is determined by the position of A (the position of the inner surface on the outer peripheral side of the groove 5 when the end face of the ceramic substrate 1 is set to 0) and the position of B (the groove when the end face of the ceramic substrate 1 is set to 0). 5 (the position of the inner surface on the side of the mounting surface 1a) and the depth of the groove 5. With respect to the width X of the resin frame 2, the position A is 0.5X to (X-0.1 mm), and the position B is (X
+0.1 mm) to 1.5X. The depth of the groove 5 is 0.05 mm with respect to the thickness Y of the ceramic substrate 1.
~ 0.5Y is preferred.
【0022】Aの位置が0.5X未満だと、セラミック
基板1と樹脂枠体2との接着強度が低下し、樹脂枠体2
の外れ等が多くなり、またセラミック基板1と樹脂枠体
2の隙間にダストが残り易くなり、洗浄工程でダスト除
去が困難になる。(X−0.1mm)(樹脂枠体2の内
側面7から外周側へ0.1mm離れた位置)を超える
と、接着剤4が搭載面1a側へはみ出し易くなる。ま
た、Bの位置が、(X+0.1mm)(樹脂枠体2の内
側面7から半導体受光素子側へ0.1mm離れた位置)
未満だと、セラミック基板1と樹脂枠体2の隙間にダス
トが残り易くなるため洗浄工程でのダスト除去が困難に
なり、1.5X(樹脂枠体2の内側面7から半導体受光
素子側へ0.5X離れた位置)を超えると、結果的に搭
載面1aが大きくなり、半導体容器が大型重量化され
る。If the position of A is less than 0.5X, the adhesive strength between the ceramic substrate 1 and the resin frame 2 is reduced, and the resin frame 2
Of the ceramic frame 1 and the resin frame 2 are likely to remain in the gap between the ceramic substrate 1 and the resin frame 2, making it difficult to remove the dust in the cleaning process. When the distance exceeds (X-0.1 mm) (at a position 0.1 mm away from the inner side surface 7 of the resin frame body 2 toward the outer peripheral side), the adhesive 4 easily protrudes toward the mounting surface 1a. The position of B is (X + 0.1 mm) (a position 0.1 mm away from the inner surface 7 of the resin frame 2 toward the semiconductor light receiving element).
If it is less than 1.5 mm, dust tends to remain in the gap between the ceramic substrate 1 and the resin frame 2, so that it is difficult to remove the dust in the cleaning step, and 1.5X (from the inner surface 7 of the resin frame 2 to the semiconductor light receiving element side). When the distance exceeds 0.5X), the mounting surface 1a becomes large as a result, and the semiconductor container is increased in size and weight.
【0023】溝5の深さが0.05mm未満だと、セラ
ミック基板1と樹脂枠体2の隙間にダストが残り易くな
り、洗浄工程でのダスト除去が困難になる。0.5Yを
超えるとセラミック基板1の剛性が低下し、セラミック
基板1と樹脂枠体2の接合時に溝5部にクラックが発生
する。具体的には、Xの長さは2〜8mm程度、Yの厚
みは0.5〜3mm程度である。If the depth of the groove 5 is less than 0.05 mm, dust tends to remain in the gap between the ceramic substrate 1 and the resin frame 2, making it difficult to remove dust in the cleaning step. If it exceeds 0.5Y, the rigidity of the ceramic substrate 1 will decrease, and cracks will occur in the grooves 5 when the ceramic substrate 1 and the resin frame 2 are joined. Specifically, the length of X is about 2 to 8 mm, and the thickness of Y is about 0.5 to 3 mm.
【0024】また、セラミック基板1を研磨等の加工に
より、溝5の内面の算術平均粗さRaは0.05〜0.
4μm程度とする。0.05μm未満の場合は研磨の加
工限界であり、また0.4μmを超える場合は洗浄工程
でのダスト除去が困難となる。The arithmetic mean roughness Ra of the inner surface of the groove 5 is set to 0.05 to 0.
It is about 4 μm. If it is less than 0.05 μm, it is the limit of polishing, and if it exceeds 0.4 μm, it becomes difficult to remove dust in the cleaning step.
【0025】さらに、溝5の内面の算術平均粗さRaが
0.05〜0.4μmであることにより、一般的に量の
多い0.4μmを超える大きさのダストはほとんど付着
しなくなる。また、0.05μm以下の大きさのダスト
が溝5の内面に付着しても、そのような小さなダストは
内面との分子間力で付着している場合が多く、その結果
付着力が弱く、洗浄工程で容易に除去できるようにな
る。従って、溝5に付着するダストはほとんどなくなる
ため、半導体受光素子を正常に作動させることができ
る。Further, when the arithmetic average roughness Ra of the inner surface of the groove 5 is 0.05 to 0.4 μm, generally large amount of dust having a size exceeding 0.4 μm hardly adheres. Even if dust having a size of 0.05 μm or less adheres to the inner surface of the groove 5, such small dust often adheres to the inner surface by an intermolecular force with the inner surface, and as a result, the adhesive force is weak, It can be easily removed in the washing step. Therefore, almost no dust adheres to the groove 5, and the semiconductor light receiving element can be normally operated.
【0026】樹脂枠体2は、セラミック基板1の上面に
接着剤4により接合されて内側の搭載面1aを囲む領域
に半導体受光素子を収容する空間を形成し、セラミック
基板1とともに容器を構成する。The resin frame 2 is joined to the upper surface of the ceramic substrate 1 with an adhesive 4 to form a space for accommodating the semiconductor light receiving element in a region surrounding the inner mounting surface 1a, and forms a container together with the ceramic substrate 1. .
【0027】尚、樹脂枠体2の樹脂材料としては、ビス
フェノールA型エポキシ樹脂,ノボラック型エポキシ樹
脂,グリシジアルアミン型エポキシ樹脂等のエポキシ樹
脂、ポリイミド樹脂,フェノール樹脂,不飽和ポリエス
テル樹脂,シリコーン樹脂等の熱硬化性樹脂、または、
液晶ポリマー,ポリフェニレンスルフィド樹脂,ポリス
ルホン樹脂等の熱可塑性樹脂が用いられる。特に耐熱
性、耐湿性が良好でかつ低価格の観点からエポキシ樹脂
が好ましい。また、これらの樹脂には硬化剤、硬化促進
剤、充填剤、難燃剤、顔料、離型剤等が配合されていて
もよい。As the resin material of the resin frame 2, epoxy resins such as bisphenol A type epoxy resin, novolak type epoxy resin, glycidialamine type epoxy resin, polyimide resin, phenol resin, unsaturated polyester resin, silicone resin Or other thermosetting resin, or
Thermoplastic resins such as liquid crystal polymer, polyphenylene sulfide resin, and polysulfone resin are used. Particularly, an epoxy resin is preferable from the viewpoint of good heat resistance and moisture resistance and low cost. Further, these resins may contain a curing agent, a curing accelerator, a filler, a flame retardant, a pigment, a release agent, and the like.
【0028】樹脂枠体2を製作するには、例えば射出成
形法あるいはトランスファー成形法により、複数のリー
ドフレーム3を所定位置にセットした金型中に、約5〜
20MPa(メガパスカル)の圧力,約150〜200
℃の温度,約1〜10分の成型時間といった成型条件に
より、樹脂材料を注入固化することによって製作すれば
よい。In order to manufacture the resin frame 2, for example, an injection molding method or a transfer molding method is used to put a plurality of lead frames 3 in a mold in which a plurality of lead frames 3 are set at predetermined positions.
20MPa (megapascal) pressure, about 150-200
It may be manufactured by injecting and solidifying a resin material under molding conditions such as a temperature of ° C. and a molding time of about 1 to 10 minutes.
【0029】リードフレーム3は、鉄(Fe)−ニッケ
ル(Ni)−コバルト(Co)合金やFe−Ni合金、
銅(Cu)合金等の金属材料から成り、容器内部に収容
される半導体受光素子にボンディングワイヤ等の電気的
接続手段により接続されるとともに、外部電気回路に半
田等を介して接続されることにより、両者間の導電路と
して機能するものである。The lead frame 3 is made of an iron (Fe) -nickel (Ni) -cobalt (Co) alloy, an Fe-Ni alloy,
It is made of a metal material such as a copper (Cu) alloy, and is connected to a semiconductor light receiving element housed in a container by an electric connection means such as a bonding wire and is connected to an external electric circuit via solder or the like. , Function as a conductive path between them.
【0030】また、リードフレーム3は、例えば、Fe
−Ni−Co合金のインゴット(塊)に圧延加工法や打
ち抜き加工法等、従来周知の金属加工法を施すことによ
って、所定の形状、寸法に形成される。また、その露出
表面には、耐蝕性に優れ、かつろう材やボンディングワ
イヤ等との濡れ性が良いニッケルや金等の良導電性の金
属メッキ膜を0.1〜20μmの厚みに被着させておく
と、リードフレーム3の酸化腐食を有効に防止すること
ができるとともに、ボンディングワイヤや半田等による
電気的接続を良好なものとすることができる。The lead frame 3 is made of, for example, Fe
-An ingot (a lump) of a Ni-Co alloy is formed into a predetermined shape and dimensions by applying a conventionally known metal working method such as a rolling method or a punching method. On the exposed surface, a highly conductive metal plating film such as nickel or gold having excellent corrosion resistance and good wettability with a brazing material or a bonding wire is applied to a thickness of 0.1 to 20 μm. By doing so, the oxidative corrosion of the lead frame 3 can be effectively prevented, and the electrical connection using a bonding wire, solder, or the like can be improved.
【0031】セラミック基板1の上面に樹脂枠体2を接
合する接着剤4は、アクリル系ゴムを含有したエポキシ
樹脂等から成る。このようなエポキシ樹脂から成る接着
剤としては、具体的にはビスフェノールA型エポキシ樹
脂やノボラック型エポキシ樹脂、グリシジアルアミン型
エポキシ樹脂等のエポキシ樹脂にアミン系硬化剤やイミ
ダゾール系硬化剤、酸無水物硬化剤等の硬化剤を添加し
た樹脂接着剤を用い、これにブチルアクリレートゴムや
架橋ポリメチルメタアクリレートゴム、エチルアクリレ
ートゴム、ウレタンアクリレートゴム等からなるアクリ
ル系ゴムの粒子を含有させたものを用いる。The adhesive 4 for joining the resin frame 2 to the upper surface of the ceramic substrate 1 is made of epoxy resin containing acrylic rubber or the like. Specific examples of the adhesive composed of such an epoxy resin include an epoxy resin such as a bisphenol A type epoxy resin, a novolak type epoxy resin, a glycidylamine type epoxy resin, an amine type curing agent, an imidazole type curing agent, and an acid anhydride. Using a resin adhesive to which a curing agent such as a product curing agent has been added, and containing particles of acrylic rubber such as butyl acrylate rubber, cross-linked polymethyl methacrylate rubber, ethyl acrylate rubber, urethane acrylate rubber, etc. Used.
【0032】そして、このような接着剤4によりセラミ
ック基板1と樹脂枠体2とを接合するには、例えば、ま
ずセラミック基板1の上面のうち樹脂枠体2と接合させ
る部分にスクリーン印刷法やディスペンサー法等により
接着剤4を枠状に印刷塗布する。次に樹脂枠体2を載置
して、接着剤4の硬化特性に応じて2〜8N(ニュート
ン)程度の圧力を加えつつ、120〜180℃の温度で
5分〜3時間程度の加熱処理を行い、接着剤4を熱硬化
させることによりセラミック基板1に樹脂枠体2を接合
させる。In order to join the ceramic substrate 1 and the resin frame 2 with such an adhesive 4, for example, first, a screen printing method or the like is applied to a portion of the upper surface of the ceramic substrate 1 to be joined to the resin frame 2. The adhesive 4 is printed and applied in a frame shape by a dispenser method or the like. Next, the resin frame 2 is placed, and a heat treatment is performed at a temperature of 120 to 180 ° C. for about 5 minutes to 3 hours while applying a pressure of about 2 to 8 N (Newton) according to the curing characteristics of the adhesive 4. Then, the resin frame 2 is joined to the ceramic substrate 1 by thermally curing the adhesive 4.
【0033】本発明の半導体容器の搭載部1aに半導体
受光素子を搭載し、半導体受光素子の電極とリードフレ
ーム3とをボンディングワイヤ等により電気的に接続
し、樹脂枠体2の上面にガラスやプラスチックス等から
なる透明窓を封着し、あるいは透光性封止樹脂のポッテ
ィングにより半導体受光素子を封止することにより、フ
ァクシミリやイメージスキャナ等に使用されるラインセ
ンサ等の半導体受光装置となる。The semiconductor light receiving element is mounted on the mounting portion 1a of the semiconductor container of the present invention, and the electrode of the semiconductor light receiving element and the lead frame 3 are electrically connected by a bonding wire or the like. A semiconductor light receiving device such as a line sensor used in a facsimile, an image scanner, or the like is obtained by sealing a transparent window made of plastics or the like, or sealing a semiconductor light receiving element by potting of a light-transmitting sealing resin. .
【0034】かくして、本発明は、セラミック基板の上
面に略全周にわたって溝が所定の場所に形成されてお
り、かつ溝の内面の算術平均粗さRaが0.05〜0.
4μmであることにより、樹脂枠体とセラミック基板と
の隙間に残ったダストを洗浄工程で除去することが容易
となり、半導体受光素子にダストが付着することがなく
なり、半導体受光素子を正常に作動させることができ
る。さらに、樹脂枠体とセラミック基板との接合時に接
着剤の半導体受光素子の搭載面へのはみ出しを大幅に減
少し得る。Thus, according to the present invention, a groove is formed at a predetermined position over substantially the entire circumference on the upper surface of the ceramic substrate, and the arithmetic average roughness Ra of the inner surface of the groove is 0.05 to 0.1.
When the thickness is 4 μm, dust remaining in the gap between the resin frame and the ceramic substrate can be easily removed in the cleaning step, so that dust does not adhere to the semiconductor light receiving element, and the semiconductor light receiving element operates normally. be able to. Further, the protrusion of the adhesive onto the mounting surface of the semiconductor light receiving element at the time of joining the resin frame and the ceramic substrate can be greatly reduced.
【0035】また、セラミック基板の上面に溝を形成し
ているため、溝が目印になってセラミック基板の表裏逆
に接着剤を印刷塗布するといった製造上の手違いも防止
できる。Further, since the groove is formed on the upper surface of the ceramic substrate, it is possible to prevent a manufacturing error such as printing and applying an adhesive on the ceramic substrate by using the groove as a mark.
【0036】尚、本発明は上述の実施の形態に限定され
るものでなく、本発明の要旨を逸脱しない範囲であれば
種々の変更、改良が可能であることは言うまでもない。
例えば、デジタルカメラ,ビデオカメラ等に使用され
る、エリアセンサ用CCD等の半導体受光素子を搭載す
る中空部を有する半導体容器にも適用できる。また、図
4に示すように、樹脂枠体2の下面の途中から樹脂枠体
2の内側面7にかけて略全周にわたる切り欠き部6を設
けることにより、洗浄工程での溝5内面に残留したダス
トの除去がさらに容易となる。また、図4の構成におい
て、切り欠き部6内の外周側の側面6aは、溝5の外周
側の内側面5aと略面一か、または内側面5aよりも外
周側にある(内側面5aよりも奥まっている)ことが好
ましい。この場合、接着剤4が搭載面1a側へはみ出す
のより抑制することができる。It should be noted that the present invention is not limited to the above-described embodiment, and it is needless to say that various changes and improvements can be made without departing from the gist of the present invention.
For example, the present invention can be applied to a semiconductor container having a hollow portion for mounting a semiconductor light receiving element such as a CCD for an area sensor used in a digital camera, a video camera, and the like. Further, as shown in FIG. 4, by providing a notch portion 6 extending from the middle of the lower surface of the resin frame 2 to the inner surface 7 of the resin frame 2 over substantially the entire circumference, the notch 6 remained on the inner surface of the groove 5 in the cleaning step. Removal of dust becomes easier. In addition, in the configuration of FIG. 4, the outer side surface 6 a in the notch 6 is substantially flush with the inner side surface 5 a on the outer side of the groove 5, or is on the outer side of the inner side surface 5 a (the inner side surface 5 a). It is preferable that it is recessed. In this case, it is possible to suppress the adhesive 4 from protruding toward the mounting surface 1a.
【0037】[0037]
【発明の効果】本発明は、セラミック基板の上面に略全
周にわたって溝が所定の場所に形成されており、かつ溝
の内面の算術平均粗さRaが0.05〜0.4μmであ
ることから、溝の内面に残留したダストを洗浄工程で除
去することが容易となり、半導体受光素子にダストが付
着することがなくなり、半導体受光素子を正常に作動さ
せることができる。さらに樹脂枠体とセラミック基板と
の接合時に接着剤の半導体受光素子の搭載面へのはみ出
しを大幅に抑制することができる。また、セラミック基
板の上面に溝を形成しているため、セラミック基板の表
裏逆に接着剤を印刷塗布するといった製造上の手違いも
防止できる。さらに、溝が、樹脂枠体の内側面がその開
口上に位置するように形成されているので、溝を樹脂枠
体に囲まれた領域内に形成するよりも半導体容器が小型
化されるという作用効果も有する。As described above, according to the present invention, a groove is formed at a predetermined position over substantially the entire circumference on the upper surface of a ceramic substrate, and the arithmetic average roughness Ra of the inner surface of the groove is 0.05 to 0.4 μm. Accordingly, dust remaining on the inner surface of the groove can be easily removed in the cleaning step, and dust does not adhere to the semiconductor light receiving element, and the semiconductor light receiving element can be normally operated. Further, it is possible to greatly suppress the adhesive from sticking out to the mounting surface of the semiconductor light receiving element when the resin frame and the ceramic substrate are joined. Further, since the groove is formed on the upper surface of the ceramic substrate, it is possible to prevent a manufacturing error such as printing and applying an adhesive on the ceramic substrate upside down. Further, since the groove is formed such that the inner side surface of the resin frame is located above the opening, the semiconductor container is smaller than when the groove is formed in a region surrounded by the resin frame. It also has an effect.
【0038】また、本発明は、好ましくは樹脂枠体の下
面の途中から樹脂枠体の内側面にかけて略全周にわたる
切り欠き部が形成されていることにより、洗浄工程での
溝内面に残留したダストの除去がさらに容易となる。Further, according to the present invention, preferably, a notch is formed over substantially the entire periphery from the middle of the lower surface of the resin frame to the inner surface of the resin frame, so that the notch remains on the inner surface of the groove in the cleaning step. Removal of dust becomes easier.
【0039】また、本発明は、好ましくは溝の深さが
0.05mm〜0.5Y(但し、Yはセラミック基板の
厚さ)であることにより、洗浄工程でのダスト除去が容
易になるとともに、セラミック基板の剛性を保持してセ
ラミック基板と樹脂枠体の接合時にセラミック基板にク
ラック等が発生するのを防ぐことができる。Further, according to the present invention, preferably, the depth of the groove is 0.05 mm to 0.5 Y (where Y is the thickness of the ceramic substrate), so that dust can be easily removed in the cleaning step. In addition, it is possible to maintain the rigidity of the ceramic substrate and prevent cracks and the like from occurring in the ceramic substrate when the ceramic substrate and the resin frame are joined.
【図1】本発明の半導体容器の実施の形態の一例を示す
断面図である。FIG. 1 is a sectional view showing an example of an embodiment of a semiconductor container of the present invention.
【図2】図1の半導体容器の斜視図である。FIG. 2 is a perspective view of the semiconductor container of FIG. 1;
【図3】図1の半導体容器の要部拡大断面図である。FIG. 3 is an enlarged sectional view of a main part of the semiconductor container of FIG. 1;
【図4】図1の半導体容器について他の実施の形態を示
す要部拡大断面図である。FIG. 4 is an enlarged sectional view of a main part showing another embodiment of the semiconductor container of FIG. 1;
【図5】従来の半導体容器の断面図である。FIG. 5 is a sectional view of a conventional semiconductor container.
【図6】従来の半導体容器の要部拡大断面図である。FIG. 6 is an enlarged sectional view of a main part of a conventional semiconductor container.
【図7】従来の半導体容器の他の例の要部拡大断面図で
ある。FIG. 7 is an enlarged sectional view of a main part of another example of a conventional semiconductor container.
1:セラミック基板 2:樹脂枠体 3:リードフレーム 4:接着剤 5:溝 7:内側面 1: ceramic substrate 2: resin frame 3: lead frame 4: adhesive 5: groove 7: inner surface
Claims (3)
同じ外形寸法を有するとともに複数のリードフレームを
狭持した樹脂枠体とを接着剤により接合して成り、前記
セラミック基板の上面の前記樹脂枠体に囲まれた領域に
半導体受光素子の搭載面を有する半導体受光素子収納用
容器において、前記上面の前記樹脂枠体の下方の部位に
前記樹脂枠体の内側面がその開口上に位置する溝が略全
周にわたって形成されており、かつ前記溝の内面の算術
平均粗さRaが0.05〜0.4μmであることを特徴
とする半導体受光素子収納用容器。1. A resin frame on an upper surface of a ceramic substrate, wherein a ceramic substrate and a resin frame having substantially the same external dimensions as the ceramic substrate and holding a plurality of lead frames are joined by an adhesive. In a semiconductor light receiving element storage container having a mounting surface of a semiconductor light receiving element in a region surrounded by a body, a groove in which an inner side surface of the resin frame is positioned above an opening in a portion of the upper surface below the resin frame. Are formed over substantially the entire circumference, and the arithmetic average roughness Ra of the inner surface of the groove is 0.05 to 0.4 μm.
体の内側面にかけて略全周にわたる切り欠き部が形成さ
れていることを特徴とする請求項1記載の半導体受光素
子収納用容器。2. A container for accommodating a semiconductor light-receiving element according to claim 1, wherein a notch is formed over substantially the entire circumference from the middle of the lower surface of the resin frame to the inner surface of the resin frame. .
(但し、Yは前記セラミック基板の厚さ)であることを
特徴とする請求項1または請求項2記載の半導体受光素
子収納用容器。3. The groove has a depth of 0.05 mm to 0.5 Y.
3. The container according to claim 1, wherein Y is the thickness of the ceramic substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000329619A JP2002134763A (en) | 2000-10-27 | 2000-10-27 | Container for semiconductor light receiving element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000329619A JP2002134763A (en) | 2000-10-27 | 2000-10-27 | Container for semiconductor light receiving element |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2002134763A true JP2002134763A (en) | 2002-05-10 |
Family
ID=18806262
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000329619A Pending JP2002134763A (en) | 2000-10-27 | 2000-10-27 | Container for semiconductor light receiving element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2002134763A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007173496A (en) * | 2005-12-22 | 2007-07-05 | Matsushita Electric Ind Co Ltd | Package for solid state imaging device, and solid state imaging apparatus |
JP2011014615A (en) * | 2009-06-30 | 2011-01-20 | Denso Corp | Sensor device and manufacturing method thereof |
WO2012002378A1 (en) * | 2010-06-28 | 2012-01-05 | 京セラ株式会社 | Wiring substrate, image pickup device, and image-pickup device module |
JP2012008265A (en) * | 2010-06-23 | 2012-01-12 | Kyocera Corp | Element housing package, and optical module and optical semiconductor device equipped with the same |
JP2012015172A (en) * | 2010-06-29 | 2012-01-19 | Kyocera Corp | Electronic component encapsulating substrate and manufacturing method thereof |
WO2012026516A1 (en) * | 2010-08-27 | 2012-03-01 | 京セラ株式会社 | Element-containing package and module provided therewith |
WO2013046676A1 (en) * | 2011-09-30 | 2013-04-04 | 旭化成エレクトロニクス株式会社 | Infrared sensor and retaining body |
CN110767610A (en) * | 2019-10-15 | 2020-02-07 | 四川豪威尔信息科技有限公司 | Integrated circuit and manufacturing method thereof |
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2000
- 2000-10-27 JP JP2000329619A patent/JP2002134763A/en active Pending
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007173496A (en) * | 2005-12-22 | 2007-07-05 | Matsushita Electric Ind Co Ltd | Package for solid state imaging device, and solid state imaging apparatus |
JP2011014615A (en) * | 2009-06-30 | 2011-01-20 | Denso Corp | Sensor device and manufacturing method thereof |
JP2012008265A (en) * | 2010-06-23 | 2012-01-12 | Kyocera Corp | Element housing package, and optical module and optical semiconductor device equipped with the same |
WO2012002378A1 (en) * | 2010-06-28 | 2012-01-05 | 京セラ株式会社 | Wiring substrate, image pickup device, and image-pickup device module |
JP5491628B2 (en) * | 2010-06-28 | 2014-05-14 | 京セラ株式会社 | WIRING BOARD, IMAGING DEVICE, AND IMAGING DEVICE MODULE |
JP2012015172A (en) * | 2010-06-29 | 2012-01-19 | Kyocera Corp | Electronic component encapsulating substrate and manufacturing method thereof |
WO2012026516A1 (en) * | 2010-08-27 | 2012-03-01 | 京セラ株式会社 | Element-containing package and module provided therewith |
WO2013046676A1 (en) * | 2011-09-30 | 2013-04-04 | 旭化成エレクトロニクス株式会社 | Infrared sensor and retaining body |
JPWO2013046676A1 (en) * | 2011-09-30 | 2015-03-26 | 旭化成エレクトロニクス株式会社 | Infrared sensor and holder |
CN110767610A (en) * | 2019-10-15 | 2020-02-07 | 四川豪威尔信息科技有限公司 | Integrated circuit and manufacturing method thereof |
CN110767610B (en) * | 2019-10-15 | 2021-06-25 | 四川豪威尔信息科技有限公司 | Integrated circuit and manufacturing method thereof |
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