JP2000138305A - Manufacture of container for semiconductor light- receiving element housing - Google Patents

Abstract

PROBLEM TO BE SOLVED: To readily make compatible the dimensional accuracy of a semiconductor light-receiving element mounting surface and the heat dissipating property of a container for a semiconductor light-receiving element housing. SOLUTION: This manufacturing method, wherein a resin frame body which has almost the same external size as that of a rectangular-shape ceramic board 1, encircles a mounting surface 1a and at the same time, pinches a plurality of lead frames 3 on the sides of the long sides thereof, has a prescribed difference between thermal expansion coefficients and has a prescribed thickness, is bonded to the ceramic board 1, which has warpage of a prescribed accuracy in a prescribed thickness and has a mounting surface 1a on the upper surface thereof, with a bonding agent 4 consisting of an epoxy resin containing a prescribed amount of an acrylic rubber to obtain a container for semiconductor light-receiving element housing having the mounting surface 1a of planarity which is formed into a recessed form of 30 μm or smaller, in the long side direction thereof. A container for semiconductor light-receiving element housing, which has high dimensional accuracy of the mounting surface 1a and is high in reliability and also superior in heat dissipating properties can be manufactured.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor light receiving element housing container having a hollow space for mounting a semiconductor light receiving element such as a CCD for a long line sensor used for a facsimile or an image scanner. More particularly, the present invention relates to a method for manufacturing a semiconductor light receiving element storage container formed by joining a ceramic substrate and a resin frame body in which a lead frame is integrated.

[0002]

2. Description of the Related Art A line sensor used for a facsimile or an image scanner of OA equipment includes a semiconductor light receiving element such as a long line sensor CCD (charge coupled device) mounted in a semiconductor light receiving element housing container. It is constituted by that. Conventionally, for such a semiconductor light receiving element storage container, a so-called ceramic package having a mounting portion for a semiconductor light receiving element in a concave portion formed on the upper surface of a ceramic substrate has been used. Then, the semiconductor light receiving element was die-bonded to the mounting portion, and electrical wiring was performed by a bonding wire or the like, and the opening of the concave portion was sealed with a transparent window made of glass or plastics, thereby being used as a line sensor. .

Further, in order to meet various specifications and demands for cost reduction, potting with a transparent sealing resin is performed instead of sealing a transparent window, and a plastic package using a resin material instead of a ceramic substrate is used. What was called was used.

Further, Japanese Patent Application Laid-Open No. 10-50970 discloses that a frame made of resin integrally molded in a shape sandwiching leads is adhered to a base plate made of glass so as to surround a charge transfer element mounted on the base plate. There has been proposed a solid-state imaging device comprising:

[0005]

However, in the conventional ceramic package, it is difficult to increase the dimensional accuracy due to the shrinkage of the dimensions during firing when manufacturing the semiconductor light receiving element storage container. For example, there is a problem in that a large warpage of 50 μm or more is generated on the mounting surface, for example, upward, and it is difficult to mount a long semiconductor light receiving element to an optical system with required accuracy. Further, in order to fix a plurality of leads to a ceramic substrate, a large amount of energy is consumed in a manufacturing process because a sealing glass or a brazing material having a high temperature is used for heat treatment.
In addition to the fact that ceramic raw materials are relatively expensive, there is also a problem that it is difficult to meet the demand for cost reduction.

On the other hand, in a conventional plastic package, resin shrinks during molding, and the amount of shrinkage is large and it is difficult to make the state of shrinkage uniform. However, there is a problem that it is difficult to mount a long semiconductor light receiving element to an optical system with required accuracy. In addition, since the resin constituting the container has a low thermal conductivity, the mounted semiconductor light receiving element does not dissipate heat to the heat generated during the operation, and the characteristics of the element are deteriorated as the temperature rises. Was.

Further, in a semiconductor light receiving element storage container including a glass base plate and a resin frame disclosed in JP-A-10-50970, heat generated from the semiconductor light receiving element is generated in the glass base plate. Because of the accumulation, there is also a problem that the characteristics of the element are deteriorated as the temperature rises.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems of the prior art, and has as its object to improve the dimensional accuracy of a mounting surface for a long semiconductor light receiving element and to dissipate heat generated by the semiconductor light receiving element. It is an object of the present invention to provide a method for manufacturing a semiconductor light-receiving element storage container that can obtain a semiconductor light-receiving element storage container with good performance.

[0009]

According to the present invention, there is provided a method for manufacturing a semiconductor light-receiving element housing, comprising a rectangular ceramic substrate, a plurality of lead frames having substantially the same outer dimensions as the ceramic substrate, and a long side. The semiconductor light receiving element is formed by bonding an adhesive to a resin frame body sandwiching the resin frame, and has a flatness in a long side direction of 30 μm or less in a region surrounded by the resin frame body on the upper surface of the ceramic substrate. A method for manufacturing a semiconductor light receiving element storage container having a mounting surface, wherein the thickness is 1.5 to 3 mm, the flatness between both ends in the long side direction of the mounting surface is 20 μm or less, and the back surface has a long side direction. A step of preparing the ceramic substrate having a concave warpage of 30 to 100 μm between both ends, and an epoxy resin having a difference in thermal expansion coefficient from the ceramic substrate of 0.3 to 0.7 × 10 ⁻⁵ / ° C. Approximately the same as the ceramic substrate It has outer dimensions,
A plurality of lead frames were joined to the upper surface of the ceramic substrate to surround the mounting surface and sandwich a plurality of lead frames on the long side.
A step of preparing a resin frame having a thickness of 1 to 3 mm, and a step of bonding the resin frame to an upper surface of the ceramic substrate with an adhesive made of an epoxy resin containing 3 to 36% by weight of an acrylic rubber. It is characterized by having.

According to the present invention, an acryl-based ceramic substrate having a predetermined dimensional accuracy and a resin frame having a predetermined thermal expansion coefficient difference from the ceramic substrate and integrally formed by sandwiching a lead frame are provided. It is made of epoxy resin containing a predetermined amount of rubber, and is joined by an adhesive with moderate flexibility, so it has excellent thermal stress properties and reduces warpage, thereby reducing the flatness of the mounting surface of the semiconductor light receiving element by 30μ.
m or less, and a semiconductor light-receiving element storage container capable of mounting a long semiconductor light-receiving element in an optical system with required accuracy can be obtained. Further, since the adhesive has a strong and moderate flexibility between the ceramic substrate and the resin frame, even if a thermal stress is applied after joining, the resin frame does not peel off from the ceramic substrate. Thus, a highly reliable semiconductor light receiving element storage container can be obtained. Further, since ceramic is used as the substrate on which the semiconductor light receiving element is mounted, it can have high heat conductivity and excellent heat dissipation as compared with conventional ones made of resin or glass. It is possible to obtain a semiconductor light receiving element storage container that can suppress deterioration of characteristics and can cope with high integration of the semiconductor light receiving element.

Further, according to the present invention, in the above-mentioned manufacturing method, the thickness X of the upper side from the upper surface of the lead frame in which the resin frame is sandwiched is 0.8 Y with respect to the lower side Y. By setting ≦ X ≦ Y, the dimensional accuracy of the mounting surface can be made more favorable with a concave shape of 30 μm or less.

Further, according to the present invention, in each of the above-described manufacturing methods, by using an aluminum oxide sintered body as the ceramic substrate, the dimensional accuracy of the mounting surface is high, the sealing reliability and heat dissipation are improved. A container for housing a semiconductor light receiving element having excellent performance can be obtained.

[0013]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a method for manufacturing a semiconductor light receiving element storage container according to the present invention will be described in detail with reference to the drawings.

FIG. 1 is a cross-sectional view in the short side direction showing an example of an embodiment of a semiconductor light receiving element storage container according to the present invention, and FIG. 2 is a perspective view thereof.

In FIGS. 1 and 2, 1 is a ceramic substrate having a rectangular shape on the upper surface, 2 is a resin frame having substantially the same external dimensions as the ceramic substrate 1, and 3 is sandwiched between the long sides of the resin frame 2. The plurality of lead frames 4 are adhesives for joining the ceramic substrate 1 and the resin frame 2.

The ceramic substrate 1 is formed of a rectangular plate, and has a mounting surface 1a for a long semiconductor light receiving element (not shown) in a region surrounded by a resin frame 2 on the upper surface thereof. The mounting surface 1a is a concave shape having a flatness in the long side direction of 30 μm or less in a state where a semiconductor light receiving element storage container is formed, so that a long semiconductor light receiving element such as a CCD for a line sensor can be optically formed. The mounting can be performed with a required accuracy with respect to the system, and accurate mounting can be performed without any deviation of the optical axis caused by a large warpage of the mounting surface.

The length and width of the ceramic substrate 1 are as follows:
Mounting surface 1 required according to the dimensions of the semiconductor light receiving element to be mounted
It is set as appropriate in order to secure the area of a, but usually a length of about 30 to 60 mm and a width of about 5 to 15 mm is used. In the present invention, the ceramic substrate 1
It is important that the thickness be in the range of 1.5 to 3 mm.

If the thickness of the ceramic substrate 1 is less than 1.5 mm, the strength of the ceramic substrate 1 becomes too weak, causing cracks and the like due to bonding with the resin frame 2 and cracking during handling after mounting the semiconductor light receiving element. Tend to cause inconveniences such as occurrence of cracks.

On the other hand, if the thickness of the ceramic substrate 1 exceeds 3 mm, the strength of the ceramic substrate 1 becomes too strong.
The joint with the resin frame 2 generates a stress in the opposite direction, and tends to cause a problem such as cracking of the semiconductor light receiving element.

The mounting surface 1a on the upper surface of the ceramic substrate 1
Is set appropriately according to the specifications and dimensions of the semiconductor light receiving element and the ceramic substrate 1, but usually the length is
The width is about 25 to 55 mm and the width is about 1 to 3 mm. The flatness of the mounting surface in the semiconductor light-receiving element storage container is such that the flatness in the long side direction is 30 μm or less, more preferably 20 μm or less. Thus, when a long semiconductor light receiving element is mounted, it is possible to eliminate the problem of optical axis shift caused by warpage of the mounting surface 1a, and to accurately arrange the semiconductor light receiving element with respect to the optical system. .

Before the ceramic substrate 1 is joined to the resin frame 2, the ceramic substrate 1 is mounted with a thickness t of 1.5 to 3 mm as shown in a sectional view in the long side direction in FIG. 3 and a perspective view in FIG. Surface 1a
It is prepared as having flatness of 20 μm or less between both ends A in the long side direction and having a concave warp of 30 to 100 μm between both ends B in the long side direction of the back surface.

If the warpage of the mounting surface 1 a is 0 μm or less between the both ends A in the long-side direction, the mounting surface 1 after bonding with the resin frame 2.
a deviates from the desired size range, and the semiconductor light receiving element tends to be unable to be mounted favorably. On the other hand, if the flatness between both ends A in the long side direction exceeds 20 μm, the flatness of the mounting surface 1 a after bonding with the resin frame 2 tends to be unable to be 30 μm or less.

When the back surface of the ceramic substrate 1 has a concave shape of less than 30 μm between both ends B in the long side direction, the flatness of the mounting surface 1 a after bonding with the resin frame 2 is set to 30 μm or less. Tend to be unable to do so. On the other hand, if a concave shape exceeding 100 μm is formed between both ends B in the long-side direction, problems such as cracks tend to easily occur during the molding of the ceramic substrate 1.

The ceramic substrate 1 having such dimensional accuracy
Can be prepared by adjusting the precision with a mold, polishing, or the like when obtaining a formed body that becomes the ceramic substrate 1 after firing.

The ceramic material of the ceramic substrate 1 includes aluminum oxide sintered body, mullite sintered body, aluminum nitride sintered body, silicon nitride based sintered body, silicon carbide based sintered body and glass ceramic. And various ceramic materials can be used, and may be appropriately selected according to required characteristics such as dimensional accuracy, strength, and heat dissipation. Among them,
When an aluminum oxide sintered body is used, it has a suitable thermal conductivity and is easily processed by polishing or the like. Therefore, it has a mounting surface 1a with a desired dimensional accuracy, and has strength, reliability, and heat dissipation. It is possible to obtain a semiconductor light receiving element storage container having excellent and excellent characteristics.

The resin frame 2 is joined to the upper surface of the ceramic substrate 1 with an adhesive 4 to form a space for accommodating the semiconductor light receiving element in a region surrounding the inner mounting surface 1a, and forms a container together with the ceramic substrate 1. . This resin frame 2 has a thermal expansion coefficient difference from the ceramic substrate 1 of 0.3 to 0.7 × 10 ⁻⁵ /
It is formed as a rectangular frame having the same outer dimensions as the ceramic substrate 1 and surrounding the mounting surface 1a by an epoxy resin having a temperature of ° C. Further, a plurality of lead frames 3 as electric connection means for connecting the semiconductor light receiving element inside the container and an external electric circuit are sandwiched on the long side thereof.
And the resin frame 2 are integrally formed. Further, the thickness of the resin frame 2 is set to 1 to 3 mm.

The reason why the difference between the thermal expansion coefficient of the resin frame 2 and that of the ceramic substrate 1 is 0.3 to 0.7 × 10 ^-5 / ° C.
This is because a semiconductor light receiving element storage container having high dimensional accuracy of the mounting surface 1a and excellent in sealing reliability and heat dissipation can be obtained. This difference in thermal expansion coefficient is 0.3 × 10 ^-5 / ℃
When the value is less than the above, there is a tendency that a suitable flatness of the mounting surface 1a cannot be obtained due to stress distortion caused by a difference in thermal expansion coefficient between the resin frame 2 and the ceramic substrate 1. On the other hand, when the difference in thermal expansion coefficient exceeds 0.7 × 10 ⁻⁵ / ° C., cracks and the like tend to occur easily due to stress strain caused by the difference in thermal expansion coefficient between the two.

If the thickness of the resin frame 2 is less than 1 mm, the strength of the resin frame 2 becomes too weak, and cracks and the like due to joining with the ceramic substrate 1 tend to occur easily. On the other hand, if the thickness exceeds 3 mm, the resin frame 2
Is too strong, and a stress in the opposite direction is generated by bonding with the ceramic substrate 1, which tends to cause a problem such as cracking of the semiconductor light receiving element.

The reason why the epoxy resin is used as the resin frame 2 is that it has good heat resistance and moisture resistance and can be provided at a low price. Specifically, an epoxy resin such as a bisphenol A-type epoxy resin, a novolak-type epoxy resin, or a glycidylamine-type epoxy resin, which is thermosetting, is used.

In order to manufacture the resin frame 2, for example, by injection molding or transfer molding, about 50 to 200 kgf is placed in a mold in which a plurality of lead frames 3 are set at predetermined positions on the long side. / Cm ² pressure, about 150 ~
It may be manufactured by injecting and solidifying a resin material under a molding condition of a temperature of 200 degrees and about 1 to 10 minutes.

As shown in FIGS. 1 and 2, the resin frame 2 has a thickness ratio between the upper and lower thicknesses of the lead frame 3 sandwiched between the upper and lower surfaces of the lead frame 3, where X is the upper thickness. Assuming that the thickness is Y, by setting 0.8 Y ≦ X ≦ Y, the warp of the long resin frame 2 can be reduced, so that a semiconductor light receiving element storage container having desired dimensional accuracy can be obtained.

The lead frame 3 is made of a metal material such as an iron-nickel alloy or an iron-nickel-cobalt alloy / copper alloy, and is connected to a semiconductor light receiving element housed in the container by an electrical connection means such as a bonding wire. In addition, by being connected to an external electric circuit via solder or the like, it functions as a conductive path between them.

When the lead frame 3 is made of, for example, an iron-nickel-cobalt alloy, a predetermined well-known metal working method such as a rolling method or a punching method is applied to an ingot of the alloy. It is formed in the shape and size of. On the exposed surface, a highly conductive metal plating film such as nickel or gold having excellent corrosion resistance and good wettability with a brazing material, a bonding wire, etc. is applied to a thickness of 0.1 to 20 μm. Thus, oxidation corrosion of the exposed surface of the lead frame 3 can be effectively prevented, and good electrical connection by bonding wires, solder, or the like can be achieved.

The adhesive 4 for joining the resin frame 2 to the upper surface of the ceramic substrate 1 is made of an epoxy resin containing 3-36% by weight of an acrylic rubber. Specific examples of the adhesive made of such an epoxy resin include an epoxy resin such as a bisphenol A type epoxy resin, a novolak type epoxy resin, a glycidylamine type epoxy resin, an amine type curing agent, an imidazole type curing agent, and an acid anhydride. A resin adhesive to which a curing agent such as a product curing agent was added was used, and an acrylic rubber such as butyl acrylate rubber or cross-linked polymethyl methacrylate rubber / ethyl acrylate rubber / urethane acrylate rubber was contained in an amount of 3 to 36% by weight. Use something.

When the acrylic rubber contained in the epoxy resin of the adhesive 4 is less than 3% by weight, the elastic modulus of the adhesive 4 is increased, and the flexibility of the adhesive 4 is reduced. When the thermal stress caused by the difference between the thermal expansion coefficients of the two is repeatedly applied after the joining of the resin frame 2, the resin frame 2 tends to be easily separated from the ceramic substrate 1. On the other hand, when the content of the acrylic rubber exceeds 36% by weight, the fluidity of the adhesive 4 becomes poor, and it tends to be difficult to satisfactorily join and seal the ceramic substrate 1 and the resin frame 2. is there.

The acrylic rubber to be contained in the adhesive 4 is preferable because it can obtain a strong bonding force and a desired flexibility at the same time when it is made into fine particles. Such particles have a true spherical shape, a substantially uniform particle size distribution, and an average particle size of 0.1 to 10 μm, preferably 0.2 to 1.
Preferably, the thickness is 0 μm, most preferably 0.3 ± 0.1 μm.

The average particle size of the acrylic rubber particles is 0.1 μm.
If it is less than m, the flexibility of the adhesive 4 tends to be low, and the desired flexibility cannot be obtained. On the other hand, the average particle size is 10
If it exceeds μm, it becomes difficult to uniformly disperse the acrylic rubber in the adhesive 4, and the fluidity of the adhesive 4 becomes poor, so that good bonding between the ceramic substrate 1 and the resin frame 2 tends to be impossible. There is.

In order to join the ceramic substrate 1 and the resin frame 2 with such an adhesive 4, for example, first, as shown in FIG. 3, the ceramic substrate 1 is joined to the resin frame 2 on the upper surface of the ceramic substrate 1. The adhesive 4 is printed and applied to the portion in a frame shape by a screen printing method, a dispenser method, or the like. Next, the resin frame 2 is placed, and while applying a pressure of about 200 to 800 gf according to the curing properties of the adhesive 4, the
Heat treatment at a temperature of about 5 ° C. for about 5 minutes to 3 hours,
The resin frame 2 is joined to the ceramic substrate 1 by thermosetting the adhesive 4.

At this time, the use of the adhesive 4 reduces the stress distortion caused by the difference between the two coefficients of thermal expansion, thereby reducing the flatness of the mounting surface 1a of the bonded ceramic substrate 1 in the long side direction. Has a concave shape of 30 μm or less.
A container for accommodating a semiconductor light receiving element having high dimensional accuracy a can be obtained.

Then, the semiconductor light receiving element is mounted on the mounting portion of the semiconductor light receiving element housing obtained by the method for manufacturing the semiconductor light receiving element housing of the present invention, and the electrodes of the element and the lead frame 3 are bonded to each other by bonding wires or the like. By connecting a transparent window made of glass, plastics, or the like to the upper surface of the resin frame 2, or sealing the semiconductor light receiving element by potting with a light-transmitting sealing resin, thereby facilitating facsimile communication. A semiconductor light receiving device such as a line sensor used for an image scanner or the like.

It should be noted that the present invention is not limited to the above-described embodiment, and it is needless to say that various changes and improvements can be made without departing from the scope of the present invention.

[0042]

As described above, according to the method for manufacturing a semiconductor light receiving element container of the present invention, the thickness is 1.5 to 3 mm.
A rectangular ceramic substrate having a flatness of 20 μm or less between both ends in the long side direction of the mounting surface and having a concave warpage of 30 to 100 μm between both ends in the long side direction of the back surface, The thermal expansion coefficient difference with this ceramic substrate is 0.3 to 0.7 × 10 ^-5
/ C with epoxy resin having almost the same outer dimensions as the ceramic substrate, joined to the upper surface of the ceramic substrate to surround the mounting surface and sandwich a plurality of lead frames on the long side, with a thickness of 1 to 3 mm A resin frame made of an epoxy resin containing 3-36% by weight of an acrylic rubber;
Because it is joined by an adhesive with moderate flexibility,
A solid and highly reliable container for semiconductor light-receiving elements without peeling or cracking due to thermal stress caused by the difference in thermal expansion coefficient.The flatness of the mounting surface of the semiconductor light-receiving element is 30 μm or less. And a container for housing a semiconductor light-receiving element in which a long semiconductor light-receiving element can be mounted on an optical system with required precision can be obtained.

Also, since the adhesive has a strong and moderate flexibility between the ceramic substrate and the resin frame, the resin frame is separated from the ceramic substrate even if a thermal stress is applied after the bonding. Therefore, a highly reliable semiconductor light receiving element storage container can be obtained. Further, since ceramic is used as the substrate on which the semiconductor light receiving element is mounted, it can have high heat conductivity and excellent heat dissipation as compared with conventional ones made of resin or glass. It is possible to obtain a semiconductor light receiving element storage container that can suppress deterioration of characteristics and can cope with high integration of the semiconductor light receiving element.

Further, according to the present invention, the thickness X on the upper side from the upper surface of the lead frame sandwiching the resin frame with respect to the thickness Y on the lower side is 0.8 Y ≦ X ≦ Y. By doing so, the dimensional accuracy of the mounting surface can be further improved.

Further, according to the present invention, by using an aluminum oxide sintered body as a ceramic substrate, a semiconductor light receiving device having high dimensional accuracy of a mounting surface and excellent sealing reliability and heat dissipation is provided. An element storage container can be obtained.

As described above, according to the present invention, it is possible to obtain a semiconductor light receiving element storage container which has high dimensional accuracy of a mounting surface for a long semiconductor light receiving element and has good heat radiation for heat generated by the semiconductor light receiving element. A method for manufacturing a semiconductor light receiving element storage container can be provided.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view in the short side direction showing an example of an embodiment of a semiconductor light receiving element storage container according to the present invention.

FIG. 2 is a perspective view showing an example of an embodiment of a semiconductor light receiving element storage container according to the present invention.

FIG. 3 is a cross-sectional view in the long side direction showing an example of a ceramic substrate of the container for housing a semiconductor light receiving element according to the present invention.

FIG. 4 is a perspective view showing an example of a ceramic substrate of the container for housing a semiconductor light receiving element according to the present invention.

[Explanation of symbols]

 1 · · · · ceramic substrate 1a · · · · mounting surface A · · · · · · · between the both ends in the long side direction of the mounting surface B · · · · · · · · between both ends in the long side direction of the back surface 2 · · · · Resin frame 3 Leadframe 4 Adhesive

Claims (3)

[Claims] The ceramic ceramic substrate is formed by bonding a rectangular ceramic substrate and a resin frame having substantially the same outer dimensions as the ceramic substrate and having a plurality of lead frames sandwiched on a long side by an adhesive. A method for manufacturing a semiconductor light receiving element storage container having a semiconductor light receiving element mounting surface having a concave shape with a flatness in a long side direction of 30 μm or less in a region surrounded by the resin frame on an upper surface of a substrate, comprising: Is 1.5 to 3 mm, the flatness is 20 μm or less between both ends in the long side direction of the mounting surface, and the concave surface has a concave warpage of 30 to 100 μm between both ends in the long side direction of the back surface. A step of preparing a ceramic substrate, wherein a difference in thermal expansion coefficient between the ceramic substrate and the ceramic substrate is 0.3 to 0.7.
An epoxy resin of × 10 ^-5 / ° C. has substantially the same outer dimensions as the ceramic substrate, is joined to the upper surface of the ceramic substrate, surrounds the mounting surface, and holds a plurality of lead frames on the long side. Preparing a resin frame having a thickness of 1 to 3 mm, and applying an acrylic rubber on the upper surface of the ceramic substrate by 3 to 3 mm.
Bonding the resin frame with an adhesive made of epoxy resin containing 6% by weight. 2. The resin frame according to claim 1, wherein a thickness X above the upper surface of the lead frame sandwiched between the resin frame and the lower thickness Y is 0.8Y ≦ X ≦ Y. A method for manufacturing a semiconductor light receiving element storage container. 3. The method according to claim 1, wherein the ceramic substrate is made of an aluminum oxide sintered body.