JP4626445B2 - Manufacturing method of semiconductor package - Google Patents

Description

The present invention relates to a method for manufacturing a semiconductor package . Specifically, the circuit board is disposed on the front and back surfaces, and the mounting reliability is improved by mounting the semiconductor element on the circuit board so that the front side and the back side are symmetrical with respect to the center of the gap of the circuit board. The present invention relates to a semiconductor package manufacturing method to be improved.

  Physically responding to the demands for miniaturization and high integration of semiconductor devices associated with downsizing and weight reduction of electronic equipment, high-speed operation, high functionality, etc., simply by increasing the number of semiconductor chips. In recent years, BGA (Ball Grid Array) type semiconductor packages and LGA (Land Grid Array) type semiconductor packages have been proposed in place of pin type semiconductor packages (see, for example, Patent Document 1).

  FIG. 11 is a schematic diagram for explaining a conventional LGA type semiconductor package. The LGA type semiconductor package 101 shown here is die-bonded to an interposer substrate 102 on which external terminals 105 are formed and an upper surface of the interposer substrate. The semiconductor chip 103 and the sealing resin 104 that seals the semiconductor chip.

  When the LGA type semiconductor package configured as described above is mounted on a mounting board, as shown in FIG. 12, the terminals 107 and external terminals formed on the mounting board 106 are electrically connected with a solder paste 108 or the like. This is done by bonding with an adhesive material.

JP 11-102988 A

However, the above-described conventional semiconductor package has a problem in mounting reliability on the mounting substrate.
That is, when the material and design are selected so that the semiconductor package is flat in a high-temperature environment (for example, a reflow environment typified by solder mounting) because the linear expansion coefficients of the interposer substrate, semiconductor chip, and sealing resin are different. Even if it is flat in a high temperature environment, warping occurs when the environmental temperature of the semiconductor package changes from a high temperature environment to a normal temperature. When the semiconductor package warps in a concave shape as shown in FIG. 13A, the solder connection in the peripheral region A of the semiconductor package is broken or the peripheral region of the semiconductor package is not broken until the connection is broken. When the semiconductor package warps in a convex shape as shown in FIG. 13B, the solder connection in the central region B of the semiconductor package is broken or the connection is broken. Even if not, a stress that peels off the central region of the semiconductor package is generated.

  Further, when a material or a design is selected so that the semiconductor package is flat at normal temperature, even if the semiconductor package is flat at normal temperature, the semiconductor package is warped in a high temperature environment. If the semiconductor package warps in a concave shape as shown in FIG. 13 (a), there is a concern about mounting defects in the peripheral region of the semiconductor package, and the semiconductor package warps in a convex shape as shown in FIG. 13 (b). In such a case, there is a concern about mounting defects in the central region of the semiconductor package.

  For these reasons, in the conventional semiconductor package described above, either when the material is selected so that the semiconductor package is flat in a high temperature environment, or when the material is selected so that the semiconductor package is flat at room temperature However, since the behavior of warpage differs between the high temperature environment in which electrical connection is performed and the normal temperature at which the product is actually used, mounting reliability is increased by the occurrence of stress due to defective mounting or warping of the connected portion after mounting. There was a problem.

The present invention has been made in view of the above points, and an object of the present invention is to provide a method for manufacturing a semiconductor package having high mounting reliability on a mounting substrate.

  In order to achieve the above object, a semiconductor package according to the present invention includes a first circuit board on which at least one semiconductor element is mounted, at least one semiconductor element, and the first circuit board. And the second circuit board arranged facing each other with a predetermined gap, and the gap between the first circuit board and the second circuit board is filled, and the first circuit board and the second circuit A semiconductor package comprising a resin material for sealing a semiconductor element mounted on a substrate, wherein the first circuit substrate is based on a center of a gap between the first circuit substrate and the second circuit substrate. The semiconductor element mounting area and the semiconductor circuit mounting area of the second circuit board are substantially line-symmetric.

  Here, on the basis of the center of the gap between the first circuit board and the second circuit board, the mounting area of the semiconductor element on the first circuit board and the mounting area of the semiconductor element on the second circuit board are substantially drawn. By configuring so as to be symmetric, the linear expansion coefficient of the semiconductor package is determined between the first circuit board side and the second circuit board side with respect to the center of the gap between the first circuit board and the second circuit board. The semiconductor package can be prevented from warping by being substantially the same and having a thermal stress balance.

  Considering that the warpage of the semiconductor package is suppressed by making the linear expansion coefficients of the front surface side and the back surface side of the semiconductor package substantially the same with respect to the center of the semiconductor package as shown in FIG. The semiconductor element 111 may be mounted on both sides of the circuit board, and the semiconductor elements mounted on both sides of the circuit board may be sealed with the resin material 112.

However, in the semiconductor package in which the front and back surfaces are made of a resin material for the following reasons, there is a concern that the connection reliability to the mounting substrate is lowered.
That is, since the linear expansion coefficient of the semiconductor package and the linear expansion coefficient of the mounting substrate are different, a difference in displacement occurs between the semiconductor package and the mounting substrate due to the difference in the linear expansion coefficient. By disposing a simple circuit board and sandwiching the semiconductor element and the resin material between the circuit boards, it is considered that the amount of displacement of the semiconductor package depends on the amount of displacement of the circuit board. In general, since the linear expansion coefficients of the circuit board and the mounting board are approximated, the displacement amounts of the semiconductor package and the mounting board are also approximated. Therefore, the difference in displacement between the semiconductor package and the mounting board can be reduced by using a semiconductor package in which the front and back surfaces are formed of a circuit board instead of the resin material on the front and back surfaces. By reducing this, it is expected that the reliability of connection of the semiconductor package to the mounting substrate is improved.

  In order to achieve the above object, a method of manufacturing a semiconductor package according to the present invention includes a first circuit board on which at least one semiconductor element is mounted, at least one semiconductor element, A second circuit board disposed opposite to the first circuit board via a predetermined gap; and a gap between the first circuit board and the second circuit board is filled; the first circuit board; A method of manufacturing a semiconductor package comprising a resin material for sealing a semiconductor element mounted on the second circuit board, wherein the center of the gap between the first circuit board and the second circuit board is used as a reference. As described above, the first circuit board is placed on the upper surface of the upper mold so that the semiconductor element mounting area of the first circuit board and the semiconductor element mounting area of the second circuit board are substantially line symmetric. Place and lower surface of lower mold Placing the second circuit board; and injecting mold resin into a cavity formed by an upper mold having the first circuit board and a lower mold having the second circuit board. With.

  Here, the first circuit board is disposed on the upper surface of the upper mold so that the semiconductor element mounting area of the first circuit board and the semiconductor element mounting area of the second circuit board are substantially line symmetrical. In addition, by disposing the second circuit board on the lower surface of the lower mold, the linear expansion coefficient of the semiconductor package can be determined based on the center of the gap between the first circuit board and the second circuit board. The side and the second circuit board side can be made substantially the same, and the thermal stress balance can be achieved, thereby suppressing the warpage of the semiconductor package.

  In addition, a method for manufacturing a semiconductor package according to the present invention includes a first circuit board on which at least one semiconductor element is mounted, at least one semiconductor element mounted thereon, and a predetermined gap from the first circuit board. A second circuit board facing each other via the first circuit board, and the second circuit board disposed between the first circuit board and the second circuit board, and electrically connecting the first circuit board and the second circuit board to each other The semiconductor element mounted on the first circuit board and the second circuit board is sealed in the gap between the relay board connected to the first circuit board and the first circuit board and the second circuit board. A method for manufacturing a semiconductor package comprising a resin material, wherein a semiconductor element mounting region on the first circuit board and the mounting area of the semiconductor element on the first circuit board and the center of the gap between the first circuit board and the second circuit board Semiconductor element of second circuit board The first circuit board is disposed on the upper surface of the upper mold and the second circuit board is disposed on the lower surface of the lower mold so that the mounting area is substantially line symmetric. The step of arranging between the first circuit board and the second circuit board, the upper mold on which the first circuit board is arranged, and the lower mold on which the second circuit board is arranged, the relay. And a step of injecting mold resin into a cavity formed by an upper mold on which the first circuit board is arranged and a lower mold on which the second circuit board is arranged after applying pressure to the substrate.

  Here, by applying pressure to the relay board by the upper mold on which the first circuit board is arranged and the lower mold on which the second circuit board is arranged, the electrical connection between the first circuit board and the relay board is achieved. The connection is secured and the electrical connection between the second circuit board and the relay board is secured, and as a result, the electrical connection between the first circuit board and the second circuit board is secured.

In the semiconductor package manufacturing method of the present invention described above, the occurrence of warpage can be suppressed, and the state of the connection material (solder or the like) when mounted on the mounting board is uniform, thereby reducing mounting defects. be able to.

  Further, since the stress applied to the connection material is reduced during use after mounting the semiconductor package, the connection reliability to the mounting substrate can be improved.

Hereinafter, embodiments of the present invention will be described with reference to the drawings to facilitate understanding of the present invention.
FIG. 1 is a schematic cross-sectional view for explaining an example of a semiconductor package to which the present invention is applied. A semiconductor package 1 shown here is a first interposer in which a first semiconductor chip 2 is flip-chip connected. A substrate 3, a second interposer substrate 5 to which a second semiconductor chip 4 is flip-chip connected, and a heat dissipation plate 6 disposed between the first interposer substrate and the second interposer substrate facing each other. And a mold resin 7 that fills a gap between the first interposer substrate and the second interposer substrate and seals the first semiconductor chip and the second semiconductor chip.

  The first semiconductor chip and the second semiconductor chip have substantially the same outer size, and the center line L (hereinafter simply referred to as “center line”) of the gap between the first interposer substrate and the second interposer substrate. 1) as a reference, the front surface side region (first interposer substrate side region) of the semiconductor package indicated by symbol a in FIG. 1 and the rear surface side region (second interposer) of the semiconductor package indicated by symbol b in FIG. The first semiconductor chip and the second semiconductor chip are mounted on the first interposer substrate and the second interposer substrate so that the substrate side region has a substantially symmetrical structure.

  Here, in this embodiment, the first semiconductor chip is connected to the first interposer substrate by flip-chip connection, but electrical connection between the first semiconductor chip and the first interposer substrate is ensured. If possible, it is not always necessary to connect the first semiconductor chip and the first interposer substrate by flip chip connection. For example, electrical connection may be ensured by wire bonding connection. The same applies to the electrical connection between the second semiconductor chip and the second interposer substrate.

  Further, in this embodiment, one semiconductor chip is mounted on each of the first interposer substrate and the second interposer substrate, but the surface side region and the back surface region of the semiconductor package are divided with respect to the center line. It is sufficient if the structure is substantially symmetrical. That is, the mounting area of the semiconductor chip on the first interposer substrate and the mounting area of the semiconductor chip on the second interposer substrate are substantially symmetrical with respect to the center line. This is sufficient, and the number of semiconductor chips mounted on the interposer substrate is not necessarily limited to one. For example, as shown in FIG. 2A, a large-sized semiconductor chip is provided on the first interposer substrate. 1 and two medium-sized semiconductor chips are mounted on the second interposer substrate, or as shown in FIG. The medium size of the semiconductor chip 2 is mounted, may be or three mounting small size of the semiconductor chip to the second interposer substrate.

  Further, in this embodiment, a heat radiating plate is arranged between the first interposer substrate and the second interposer substrate and generated from the first semiconductor chip and the second semiconductor chip as the circuit is driven. Although it is configured so that heat can be released, if it is not necessary to release heat generated from the first semiconductor chip and the second semiconductor chip, it is not always necessary to dispose a heat sink.

  Here, the semiconductor chip in the semiconductor package needs to be electrically connected to the mounting substrate on which the semiconductor package is mounted. As a method for connecting the first semiconductor chip and the second semiconductor chip to the mounting substrate, for example, (1) As shown in FIG. 3A, the first interposer substrate electrically connected to the first semiconductor chip by the flexible circuit board 8 (for example, TAB tape, wiring formation PI tape, etc.) The terminal 9 and the terminal 10 of the second interposer substrate electrically connected to the second semiconductor chip are connected, and the terminal of the second interposer substrate is electrically connected by the terminal 11 of the mounting substrate 24 and the solder material 12. A method of electrically connecting the first semiconductor chip and the second semiconductor chip and the mounting substrate by connecting them together, or (2) as shown in FIG. The first interposer substrate and the second interposer substrate have the first semiconductor chip on the first interposer substrate so that the front side region and the rear side region of the semiconductor package have a substantially symmetrical structure with respect to the center line. And the relay board 13a electrically connected to the terminal of the second interposer board is mounted on the second interposer board, and the relay board 13a and the relay board are mounted. For example, the first semiconductor chip and the second semiconductor chip are mounted by electrically connecting the terminals of the second interposer substrate to the terminals of the mounting substrate using a solder material. There is a method of electrically connecting to a substrate. In FIG. 3, the heat sink is not shown for convenience of explanation.

  Hereinafter, a method for manufacturing the semiconductor package configured as described above will be described. In the following description, for convenience of explanation, a semiconductor package without a heat sink is taken as an example.

  In an example of the semiconductor package manufacturing method described above, first, as shown in FIG. 4A, the first interposer substrate to which the first semiconductor chip is flip-chip connected is vacuum-adsorbed to the upper surface of the upper mold 14. Alternatively, the second interposer substrate to which the second semiconductor chip is flip-chip connected is placed on the lower surface of the lower mold 15 by vacuum suction or mechanically clamped. At this time, the first interposer substrate and the second interposer substrate side region and the second interposer substrate side region have a substantially symmetrical structure with respect to the center line as a reference. Place the Poser board.

  Next, as shown in FIG. 4B, the mold resin is filled in the mold by the transfer molding technique, and the first semiconductor chip and the second semiconductor chip are sealed with the resin. The combined body 16 of the semiconductor package as shown in FIG.

  Thereafter, the combined body of the semiconductor packages is bonded to the dicing tape 17 and separated into pieces by the dicing blade 18 as shown in FIG. 4D, whereby a semiconductor package as shown in FIG. 4E can be obtained. it can.

  In this embodiment, the case where the mold resin is filled in the mold by the transfer molding technique has been described as an example. However, any method can be used as long as the mold resin can be filled in the mold. For example, (1) as shown in FIG. 5 (a), after applying the mold resin on the second interposer substrate by the potting method, as shown in FIG. 5 (b) A method of filling the mold resin with the mold resin sandwiched between the molds, or (2) placing a resin film 19 between the upper mold and the lower mold as shown in FIG. Alternatively, a method may be used in which the mold resin is filled in the mold as shown in FIG. 6B by sandwiching the resin film between the upper and lower molds.

  In another example of the semiconductor package manufacturing method described above, first, as shown in FIG. 7A, the first interposer substrate to which the first semiconductor chip is flip-chip connected is vacuum-sucked or mechanically. After being placed on the lower surface of the lower mold by clamping to the mold, as shown in FIG. 7B, the mold resin is filled into the mold by the transfer molding technique, as shown in FIG. 7C. The first semiconductor package assembly 20 in which the first interposer substrate on which the first semiconductor chip is mounted is sealed with the mold resin can be obtained. After that, the first semiconductor package 21 as shown in FIG. 7D can be obtained by bonding the first semiconductor package assembly to the dicing tape and separating it with a dicing blade.

  Similarly, as shown in FIG. 7E, after the second interposer substrate to which the second semiconductor chip is flip-chip connected is placed on the lower surface of the lower mold by vacuum suction or mechanical clamping. As shown in FIG. 7 (f), a mold resin is filled in the mold by the transfer molding technique, whereby the second interface on which the second semiconductor chip is mounted as shown in FIG. 7 (g). As a result, it is possible to obtain the second semiconductor package assembly 22 in which the poser substrate is sealed with the mold resin. Thereafter, the second semiconductor package 23 as shown in FIG. 7H can be obtained by bonding the combined body of the second semiconductor packages to a dicing tape and separating them with a dicing blade.

  In this embodiment, the mold resin is filled in the mold by the transfer molding technique to manufacture the first semiconductor package, but the first semiconductor chip mounted on the first interposer substrate is sealed. Of course, any method may be used as long as it can be performed, and sealing may be performed by a potting technique or the like. The same applies to the second semiconductor package.

  Next, the mold resin surface of the first semiconductor package and the mold resin surface of the second semiconductor package are structured so that the first semiconductor package region side and the second semiconductor package region side are substantially symmetrical with respect to the center line. A semiconductor package as shown in FIG. 7 (i) can be obtained by pasting together.

  Here, in this embodiment, the semiconductor package is manufactured by laminating the separated first semiconductor package and the separated second semiconductor package. After bonding the separated second semiconductor package, the combination of the first semiconductor packages may be divided into pieces, or the separated first semiconductor package may be attached to the combination of the second semiconductor packages. After combining, the combined body of the second semiconductor package may be separated into pieces, or after the combined body of the first semiconductor package and the combined body of the second semiconductor package are bonded together, the combined body of the first semiconductor package The combined body of the body and the second semiconductor package may be singulated.

In still another example of the semiconductor package manufacturing method described above, first, as shown in FIG. 8A, the first interposer substrate 3 to which the first semiconductor chip 2 is connected by wire bonding is used as the upper metal plate. The second interposer substrate 5 is disposed on the upper surface of the mold 14 by vacuum suction or mechanically clamped, and the second semiconductor chip 4 is connected to the lower die 15 by vacuum suction or mechanically. And the relay substrate 30 is disposed between the first interposer substrate and the second interposer substrate. At this time, the first interposer substrate and the second interposer substrate are disposed in the mold so that the first interposer substrate side region and the second interposer substrate side region have a substantially symmetrical structure with respect to the center line. A poser board and a relay board are arranged.
In this embodiment, each relay board is described as an example. However, by integrating each relay board with a connecting member, the handling of the relay board becomes easy. Improves the placement accuracy (mounting accuracy) of the relay board in the mold. In order to prevent the connecting member from adversely affecting the product package, a method of forming the connecting member with a material that burns out when filling with a mold resin described later, a method of forming the connecting member outside the product package area, etc. Can be considered.

  Here, the first metal bumps 31 (Au bumps, solder bumps, etc.) electrically connected to the first interposer substrate are provided on one surface of the relay substrate (the surface on the first interposer substrate side). A second metal bump 32 (Au bump, solder bump, etc.) that is formed and electrically connected to the second interposer substrate is formed on the other surface of the relay substrate (the surface on the second interposer substrate side). The protective film 33 is bonded to the surface of the relay substrate so as to cover the first metal bump and the second metal bump.

Next, as shown in FIG. 8B, by applying pressure to the first interposer substrate and the second interposer substrate with the upper and lower molds, the first interposer substrate and the first metal bumps are applied. The second interposer substrate and the second metal bump are electrically connected, and the first interposer substrate and the second interposer substrate are electrically connected via the relay substrate. Connect to.
At this time, the protective film flows due to the applied pressure and the amount of heat from the upper and lower molds, and the protruding portion 34 is formed on the lateral side of the relay substrate.

Subsequently, as shown in FIG. 8C, the mold resin is filled in the mold by the transfer molding technique, and the first semiconductor chip and the second semiconductor chip are resin-sealed, so that FIG. A combined body of semiconductor packages as shown in FIG.
At this time, the protruding portion formed on the side of the relay substrate prevents the mold resin from entering between the first interposer substrate and the relay substrate and between the second interposer substrate and the relay substrate. The connection between the first interposer substrate and the first metal bump and the connection between the second interposer substrate and the second metal bump are not broken by the pressure when the mold resin is filled therein.

  Thereafter, similarly to the above-described method for manufacturing a semiconductor package, a semiconductor package as shown in FIG. 8E can be obtained by separating the combined body of semiconductor packages with a dicing blade.

  The semiconductor package to which the present invention is applied is configured such that the front side region and the back side region of the semiconductor package have a substantially symmetrical structure with respect to the center line, and the linear expansion coefficient of the semiconductor package with respect to the center line is set as the semiconductor. Since the front surface area and the back surface area of the package can be substantially the same, the occurrence of warpage can be suppressed, and the connection state when mounted on the mounting board is uniform, so that mounting defects Reduction can be achieved.

  In addition, since the stress applied to the connection portion between the terminal of the semiconductor package and the terminal of the mounting substrate is reduced during use after the semiconductor package is mounted on the mounting substrate, the connection reliability to the mounting substrate is improved. be able to.

  In addition, by each material having the material constants shown in Table 1, (1) 6 mm × 6 mm on which a silicon chip (□ 6.5 mm, thickness 0.15 mm) as shown in FIG. A 6 mm × 6 mm × 1.2 mm semiconductor package (conventional semiconductor package structure) in which a 0.4 mm interposer substrate is sealed with a mold resin, and (2) a silicon chip (as shown in FIG. 9B) 6 mm x 6 mm x 1.6 mm interposer substrates with 6 mm x 6 mm x 0.4 mm mounted with a thickness of 6.5 mm and a thickness of 0.15 mm are placed facing each other and the interposer substrates are sealed with mold resin. A semiconductor package (semiconductor package structure (1) of the present invention) and (3) 6 mm × 6 mounted with a silicon chip (□ 6.5 mm, thickness 0.15 mm) as shown in FIG. 9C. A 6 mm × 6 mm × 1.2 mm semiconductor package (semiconductor package structure (2) of the present invention) in which an m × 0.2 mm interposer substrate is placed facing each other and the interposer substrates are sealed with a mold resin is formed. FIG. 10 shows the relationship between temperature and warpage for each semiconductor package. Note that the warpage amount shown in FIG. 10 is a positive warpage amount when the semiconductor package warps in a concave shape (when warped as shown in FIG. 13A), and the semiconductor package warps in a convex shape. The amount of warping (when warped as shown in FIG. 13B) is expressed as a negative amount of warping.

  As shown in FIG. 10, in the conventional semiconductor package structure, the warpage behavior of about 140 μm at the maximum is observed, and in the semiconductor package (1) of the present invention and the semiconductor package (2) of the present invention, the warpage amount is about 1 μm. It can be seen that it is reduced to.

It is typical sectional drawing for demonstrating an example of the semiconductor package to which this invention is applied. It is typical sectional drawing for demonstrating the modification of the semiconductor package to which this invention is applied. It is typical sectional drawing and a top view for explaining electrical connection with a semiconductor chip and a mounting board. It is typical sectional drawing for demonstrating an example of the manufacturing method of the semiconductor package to which this invention is applied. It is typical sectional drawing (1) for demonstrating the modification of an example of the manufacturing method of the semiconductor package to which this invention is applied. It is typical sectional drawing (2) for demonstrating the modification of an example of the manufacturing method of the semiconductor package to which this invention is applied. It is typical sectional drawing for demonstrating another example of the manufacturing method of the semiconductor package to which this invention is applied. It is typical sectional drawing for demonstrating another example of the manufacturing method of the semiconductor package to which this invention is applied. It is a schematic diagram for demonstrating the size of a semiconductor package. It is a graph which shows the relationship between the temperature of a semiconductor package, and curvature. It is a schematic diagram for demonstrating the conventional LGA type semiconductor package. It is a schematic diagram for demonstrating the mounting state of the conventional LGA type semiconductor package. It is typical sectional drawing for demonstrating the curvature of a semiconductor package. It is typical sectional drawing for demonstrating the semiconductor package by which the front and back were comprised with the resin material.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor package 2 1st semiconductor chip 3 1st interposer board 4 2nd semiconductor chip 5 2nd interposer board 6 Heat sink 7 Mold resin 8 Flexible circuit board 9 Terminal of 1st interposer board 10 1st 2 Interposer board terminal 11 Mounting board terminal 12 Solder material 13a Relay board 13b Relay board 14 Upper mold 15 Lower mold 16 Combined semiconductor package 17 Dicing tape 18 Dicing blade 19 Resin film 20 First semiconductor package 21 first semiconductor package 22 second semiconductor package combination 23 second semiconductor package 24 mounting substrate 30 relay substrate 31 first metal bump 32 second metal bump 33 protective film 34 protruding portion

Claims (3)

A first circuit board on which at least one semiconductor element is mounted;
A second circuit board on which at least one semiconductor element is mounted and which is disposed to face the first circuit board with a predetermined gap;
A semiconductor package comprising: a resin material that fills a gap between the first circuit board and the second circuit board and seals the first circuit board and a semiconductor element mounted on the second circuit board. A manufacturing method of
With reference to the center of the gap between the first circuit board and the second circuit board, a semiconductor element mounting area on the first circuit board and a semiconductor element mounting area on the second circuit board are lined up. Disposing the first circuit board on the upper surface of the upper mold so as to be symmetric, and disposing the second circuit board on the lower surface of the lower mold;
And a step of injecting a mold resin into a cavity formed by an upper mold having the first circuit board and a lower mold having the second circuit board. A method for manufacturing a semiconductor package. A first circuit board on which at least one semiconductor element is mounted;
A second circuit board on which at least one semiconductor element is mounted and which is disposed to face the first circuit board with a predetermined gap;
A relay board that is disposed between the first circuit board and the second circuit board and electrically connects the first circuit board and the second circuit board;
A semiconductor package comprising: a resin material that fills a gap between the first circuit board and the second circuit board and seals the first circuit board and a semiconductor element mounted on the second circuit board. A manufacturing method of
With reference to the center of the gap between the first circuit board and the second circuit board, a semiconductor element mounting area on the first circuit board and a semiconductor element mounting area on the second circuit board are lined up. The first circuit board is disposed on the upper surface of the upper mold and the second circuit board is disposed on the lower surface of the lower mold so as to be symmetric, and the relay board is connected to the first circuit board. Placing between the second circuit boards;
An upper mold in which the first circuit board is disposed after pressure is applied to the relay board by an upper mold in which the first circuit board is disposed and a lower mold in which the second circuit board is disposed. And a step of injecting a mold resin into a cavity formed by a lower mold on which the second circuit board is disposed. A method for manufacturing a semiconductor package. The relay board includes a first bump for connecting to a first circuit board;
A second bump for connecting to a second circuit board;
A protective film covering the first bump and the second bump;
The method of manufacturing a semiconductor package according to claim 2 , wherein the protective film forms a protruding portion on a side surface of the relay substrate when pressure is applied to the relay substrate by the upper mold and the lower mold.

Images